TWI456362B - 用於量測基板之性質之散射計及方法、微影裝置、微影單元和器件製造方法 - Google Patents
用於量測基板之性質之散射計及方法、微影裝置、微影單元和器件製造方法 Download PDFInfo
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- TWI456362B TWI456362B TW098104878A TW98104878A TWI456362B TW I456362 B TWI456362 B TW I456362B TW 098104878 A TW098104878 A TW 098104878A TW 98104878 A TW98104878 A TW 98104878A TW I456362 B TWI456362 B TW I456362B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Spectrometry And Color Measurement (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Claims (22)
- 一種經組態以量測一基板之一性質的散射計(scatterometer)，其包含：一輻射源，該輻射源經組態以提供一輻射光束以在該基板之一表面之一目標上產生一輻射光點，該輻射光點包含：一尺寸，其在沿著該目標之一方向上小於該目標之尺寸，該方向為該輻射光點在該目標上之移動方向，該輻射光點之移動係以一系列離散步進(discrete steps)之方式而執行；及在該目標上之複數個位置，其中該複數個位置之各者係對應於該輻射光點之個別離散步進移動；一偵測器，該偵測器經組態以：偵測自該基板之該表面上之該目標上之該輻射光點之該複數個位置所反射之該輻射光束的一光譜；及產生複數個量測信號，其中：該複數個量測信號之各者係對應於該輻射光點之該複數個位置之一個別位置；且該複數個量測信號之各者係表示自該輻射光點之該複數個位置之對應的個別位置所偵測之光譜；及一處理器，該處理器經組態以：處理由該偵測器對應於該輻射光點之該複數個位置之對應的位置所產生之該複數個量測信號之各者；及 使用該複數個量測信號，以導出表示該基板之該性質之一單一值。
- 如請求項1之散射計，其中該處理器經組態以使用對應於該目標上之該輻射光點之該複數個位置之該個別位置的複數個參考信號之個別參考信號來校正該複數個量測信號之各者。
- 如請求項2之散射計，其中該偵測器經組態以量測該複數個參考信號之各者。
- 如請求項1之散射計，其中該處理器進一步經組態以：組合該複數個量測信號，以產生一組合信號；且使用該組合信號以導出表示該基板之該性質之該單一值。
- 如請求項4之散射計，其中該複數個量測信號係藉由採取該複數個量測信號之平均值而組合。
- 如請求項4之散射計，其中該複數個量測信號係藉由採取該複數個量測信號之中間值而組合。
- 如請求項1之散射計，其中該處理器進一步經組態以：導出複數個值，其各表示該基板之該性質，其中該複數個值之各者係自該複數個量測信號之個別量測信號所導出；且組合該複數個值以產生表示該基板之該性質之該經導出之單一值。
- 如請求項7之散射計，其中該處理器經組態以使用該複數個值以產生與該經導出之單一值相關之統計資訊，其 中該統計資訊包含方差、標準差、最小值及最大值、信賴等級、或模式及離群值識別。
- 如請求項8之散射計，其中該處理器經組態以使用該統計資訊來重新定義該性質之該經導出之單一值的一目標參數。
- 如請求項1之散射計，其中：該目標包含形成於該基板之該表面上的一光柵結構；且由該偵測器所產生之該複數個量測信號係自該光柵結構之複數個線所導出。
- 如請求項1之散射計，其中該偵測器經組態以偵測自該目標在複數個角度下所反射之該輻射光束的一角解析光譜(angle resolved spectrum)。
- 一種量測一基板之一性質的方法，其包含：提供一輻射光束以在該基板之一表面上之一目標上產生一輻射光點，該輻射光點之尺寸在沿著該目標之一方向上小於該目標之尺寸；以一系列離散步進之方式在沿著該目標之該方向而移動該輻射光點，該輻射光點之各離散步進移動係對應於該目標上之該輻射光點之該複數個位置之一個別位置；偵測沿著該方向自該輻射光點之該複數個位置之各者所反射之該輻射光束的一光譜；產生複數個量測信號，其中該複數個量測信號之各者係對應於該輻射光點之該 複數個位置之一個別位置；且該複數個量測信號之各者係表示自該輻射光點之該複數個位置之對應的個別位置所偵測之光譜；處理對應於該輻射光點之該複數個位置之個別位置之該複數個量測信號之各者；及使用該複數個量測信號，以導出表示該基板之該性質之一單一值。
- 如請求項12之方法，其進一步包含使用對應於該目標上之該輻射光點之該複數個位置的之個別位置之複數個參考信號來校正該複數個量測信號之各者。
- 如請求項13之方法，其中該複數個參考信號及該複數個量測信號係藉由一相同的偵測器同時量測。
- 如請求項12之方法，其中該處理包括組合該複數個量測信號以產生一組合信號，該組合信號用以導出表示該基板之該性質之該單一值。
- 如請求項12之方法，其中該處理步驟包含：導出複數個值，其各表示該基板之該性質，其中該複數個值之各者係自該複數個量測信號之個別量測信號所導出；及組合該複數個值以產生表示該基板之該性質之該經導出之單一值。
- 如請求項16之方法，其進一步包含使用該複數個值以產生與該經導出之單一值相關之統計資訊，其中該統計資訊包含方差、標準差、最小值及最大值、信賴等級、或 模式及離群值識別。
- 如請求項12之方法，其中：包含一光柵結構之該目標係形成於該基板之該表面上，且由該偵測器所產生之該複數個量測信號係自該光柵結構之複數個線所導出。
- 如請求項12之方法，其中該偵測包括偵測自該目標在複數個角度下所反射之該輻射光束的一角解析光譜。
- 一種微影裝置，其包含：一照明光學系統，該照明光學系統經配置以照明一圖案；一投影光學系統，該投影光學系統經配置以將該圖案之一影像投影至一基板上；及一散射計，該散射計經組態以量測該基板之一性質，該散射計包含：一輻射源，該輻射源經組態以提供一輻射光束以在該基板之一表面之一目標上產生一輻射光點，該輻射光點包含：一尺寸，其在沿著該目標之一方向上小於該目標之尺寸，該方向為該輻射光點在該目標上之移動方向，該輻射光點之移動係以一系列離散步進(discrete steps)之方式而執行；及在該目標上之複數個位置，其中該複數個位置之各者係對應於該輻射光點之個別離散步進移動； 一偵測器，該偵測器經組態以：偵測自該基板之該表面上之該目標上之該輻射光點之該複數個位置所反射之該輻射光束的一光譜；及產生複數個量測信號，其中：該複數個量測信號之各者係對應於該輻射光點之該複數個位置之一個別位置；且該複數個量測信號之各者係表示自該輻射光點之該複數個位置之對應的個別位置所偵測之光譜；及一處理器，該處理器經組態以：處理由該偵測器對應於該輻射光點之該複數個位置之對應的位置所產生之該複數個量測信號之各者；及使用該複數個量測信號，以導出表示該基板之該性質之一單一值。
- 一種微影單元，其包含：一塗覆器，該塗覆器經配置成以一輻射敏感層來塗覆基板；一微影裝置，該微影裝置經配置以將影像曝光至由該塗覆器所塗覆之基板的該輻射敏感層上；一顯影器，該顯影器經配置以顯影由該微影裝置所曝光之影像；及一散射計，該散射計經組態以量測一基板之一性質， 該散射計包含：一輻射源，該輻射源經組態以提供一輻射光束以在該基板之一表面之一目標上產生一輻射光點，該輻射光點包含：一尺寸，其在沿著該目標之一方向上小於該目標之尺寸，該方向為該輻射光點在該目標上之移動方向，該輻射光點之移動係以一系列離散步進(discrete steps)之方式而執行；及在該目標上之複數個位置，其中該複數個位置之各者係對應於該輻射光點之個別離散步進移動；一偵測器，該偵測器經組態以：偵測自該基板之該表面上之該目標上之該輻射光點之該複數個位置所反射之該輻射光束的一光譜；及產生複數個量測信號，其中：該複數個量測信號之各者係對應於該輻射光點之該複數個位置之一個別位置；且該複數個量測信號之各者係表示自該輻射光點之該複數個位置之對應的個別位置所偵測之光譜；及一處理器，該處理器經組態以：處理由該偵測器對應於該輻射光點之該複數個位置之對應的位置所產生之該複數個量測信號之各者；及 使用該複數個量測信號，以導出表示該基板之該性質之一單一值。
- 一種器件製造方法，其包含：使用一微影裝置以在一基板上形成一圖案；及藉由以下步驟來判定與該圖案之一參數相關的一值：提供一輻射光束以在該基板之一表面上之一目標上產生一輻射光點，該輻射光點之尺寸在沿著該目標之一方向上小於該目標之尺寸；以一系列離散步進之方式在沿著該目標之該方向而移動該輻射光點，該輻射光點之各離散步進移動係對應於該目標上之該輻射光點之該複數個位置之一個別位置；偵測沿著該方向自該輻射光點之該複數個位置之各者所反射之該輻射光束的一光譜；產生複數個量測信號，其中該複數個量測信號之各者係對應於該輻射光點之該複數個位置之一個別位置；且該複數個量測信號之各者係表示自該輻射光點之該複數個位置之對應的個別位置所偵測之光譜；處理對應於該輻射光點之該複數個位置之個別位置之該複數個量測信號之各者；及使用該複數個量測信號，以導出表示該基板之該性質之一單一值。
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| Publication number | Publication date |
|---|---|
| US20190056216A1 (en) | 2019-02-21 |
| US10209061B2 (en) | 2019-02-19 |
| US20200217648A1 (en) | 2020-07-09 |
| US20180195857A1 (en) | 2018-07-12 |
| US11307024B2 (en) | 2022-04-19 |
| US9933250B2 (en) | 2018-04-03 |
| US20110128512A1 (en) | 2011-06-02 |
| IL207505A0 (en) | 2010-12-30 |
| US10591283B2 (en) | 2020-03-17 |
| WO2009106253A1 (en) | 2009-09-03 |
| IL207505A (en) | 2015-07-30 |
| US20220196393A1 (en) | 2022-06-23 |
| NL1036468A1 (nl) | 2009-08-31 |
| US20240044639A1 (en) | 2024-02-08 |
| US20150131076A1 (en) | 2015-05-14 |
| US11828585B2 (en) | 2023-11-28 |
| US8885150B2 (en) | 2014-11-11 |
| TW200943006A (en) | 2009-10-16 |
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