TWI456033B - Polishing composition for hard disk substrate - Google Patents

Polishing composition for hard disk substrate Download PDF

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Publication number
TWI456033B
TWI456033B TW097141659A TW97141659A TWI456033B TW I456033 B TWI456033 B TW I456033B TW 097141659 A TW097141659 A TW 097141659A TW 97141659 A TW97141659 A TW 97141659A TW I456033 B TWI456033 B TW I456033B
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TW
Taiwan
Prior art keywords
cerium oxide
hard disk
oxide particles
disk substrate
particles
Prior art date
Application number
TW097141659A
Other languages
Chinese (zh)
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TW200927903A (en
Inventor
Masahiko Suzuki
Kenichi Suenaga
Makoto Suzuki
Original Assignee
Kao Corp
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Publication date
Priority claimed from JP2007341301A external-priority patent/JP2009163810A/en
Priority claimed from JP2008143257A external-priority patent/JP4981750B2/en
Application filed by Kao Corp filed Critical Kao Corp
Publication of TW200927903A publication Critical patent/TW200927903A/en
Application granted granted Critical
Publication of TWI456033B publication Critical patent/TWI456033B/en

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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Claims (11)

一種硬碟基板用研磨液組合物,其係含有氧化鋁粒子、二氧化矽粒子以及水者;上述氧化鋁粒子之二次粒子藉由雷射光繞射法所測定的體積中值粒徑為0.1~0.8μm;上述二氧化矽粒子之一次粒子藉由穿透式電子顯微鏡觀察所測定的體積中值粒徑為40~150nm;上述二氧化矽粒子之一次粒子藉由穿透式電子顯微鏡觀察所測定的以個數為基準之粒徑標準偏差為11~35nm。 A polishing liquid composition for a hard disk substrate comprising alumina particles, cerium oxide particles, and water; and a volume median diameter of the secondary particles of the alumina particles measured by a laser diffraction method is 0.1 ~0.8 μm; the volume median diameter of the primary particles of the above cerium oxide particles measured by a transmission electron microscope is 40 to 150 nm; and the primary particles of the above cerium oxide particles are observed by a transmission electron microscope The standard deviation of the particle diameter based on the number of measurements was 11 to 35 nm. 如請求項1之硬碟基板用研磨液組合物,其中氧化鋁粒子含有α-氧化鋁。 The polishing liquid composition for a hard disk substrate according to claim 1, wherein the alumina particles contain α-alumina. 如請求項1之硬碟基板用研磨液組合物,其中二氧化矽粒子為膠體二氧化矽。 The polishing liquid composition for a hard disk substrate according to claim 1, wherein the cerium oxide particles are colloidal cerium oxide. 如請求項1之硬碟基板用研磨液組合物,其中上述二氧化矽粒子含有相對於二氧化矽粒子總量為40體積%以上的粒徑20~120nm之二氧化矽粒子;且其中含有相對於二氧化矽粒子總量為1~40體積%的粒徑20~40nm之二氧化矽粒子、相對於二氧化矽粒子總量為5~90體積%的粒徑60~80nm之二氧化矽粒子、以及相對於二氧化矽粒子總量為0~40體積%的粒徑100~120nm之二氧化矽粒子。 The polishing liquid composition for a hard disk substrate according to claim 1, wherein the cerium oxide particles contain cerium oxide particles having a particle diameter of 20 to 120 nm with respect to a total amount of cerium oxide particles of 40% by volume or more; The cerium oxide particles having a particle diameter of 20 to 40 nm in a total amount of cerium oxide particles of 1 to 40% by volume and the cerium oxide particles having a particle diameter of 60 to 80 nm in an amount of 5 to 90% by volume based on the total amount of cerium oxide particles And cerium oxide particles having a particle diameter of 100 to 120 nm with respect to the total amount of cerium oxide particles of 0 to 40% by volume. 如請求項1之硬碟基板用研磨液組合物,其中上述氧化鋁粒子與上述二氧化矽粒子之重量比(氧化鋁粒子重量/二氧化矽粒子重量)為60/40~10/90之範圍。 The polishing liquid composition for a hard disk substrate according to claim 1, wherein a weight ratio of the alumina particles to the cerium oxide particles (weight of the alumina particles/weight of the cerium oxide particles) is in the range of 60/40 to 10/90. . 如請求項1之硬碟基板用研磨液組合物,其係混合具有不同粒徑分布之2種以上之二氧化矽粒子而獲得者。 The polishing liquid composition for a hard disk substrate according to claim 1, which is obtained by mixing two or more kinds of cerium oxide particles having different particle diameter distributions. 如請求項1之硬碟基板用研磨液組合物,其中氧化鋁粒子進一步含有中間氧化鋁。 The polishing liquid composition for a hard disk substrate according to claim 1, wherein the alumina particles further contain intermediate alumina. 如請求項1至7中任一項之硬碟基板用研磨液組合物,其進一步含有具有以下述式(I)所表示之結構單元、以及來自對於100g之20℃水的溶解度為2g以下的疏水性單體之結構單元的共聚物及/或其鹽: [上述式(I)中,R1 為氫原子或甲基;R2 為氫原子或碳數1~4之烷基;AO為碳數2~8之氧化烯基;p為0或1,n為AO之總平均加成莫耳數,且為9~250之數;(AO)n中之氧乙烯基所占之比例為80莫耳%以上]。The polishing liquid composition for a hard disk substrate according to any one of claims 1 to 7, which further comprises a structural unit represented by the following formula (I) and a solubility of water of 20 g or less at 100 ° C of 2 g or less a copolymer of a structural unit of a hydrophobic monomer and/or a salt thereof: [In the above formula (I), R1 Is a hydrogen atom or a methyl group; R2 Is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; AO is an oxyalkylene group having 2 to 8 carbon atoms; p is 0 or 1, n is the total average addition molar number of AO, and is 9 to 250 The ratio of oxyethylene groups in (AO)n is 80% by mole or more]. 一種硬碟基板之製造方法,其包含使用請求項1至8中任一項之研磨液組合物研磨被研磨基板之步驟,且上述研磨中之研磨負載為10.3~16.7kPa。 A method of producing a hard disk substrate, comprising the step of polishing a substrate to be polished using the polishing composition of any one of claims 1 to 8, wherein the polishing load in the polishing is 10.3 to 16.7 kPa. 如請求項9之硬碟基板之製造方法,其中硬碟基板為垂直磁性記錄方式用硬碟基板。 The method of manufacturing a hard disk substrate according to claim 9, wherein the hard disk substrate is a hard disk substrate for a perpendicular magnetic recording method. 一種研磨方法,其係包含使用請求項1至8中任一項之研磨液組合物研磨被研磨基板之步驟者;上述被研磨基板係用於製造垂直磁性記錄方式用硬碟基板之基板,上述研磨中之研磨負載為10.3~16.7kPa,並且上述研磨步驟為粗研磨步驟。 A polishing method comprising the step of polishing a substrate to be polished using the polishing composition according to any one of claims 1 to 8, wherein the substrate to be polished is used for manufacturing a substrate for a hard disk substrate for a perpendicular magnetic recording method, The grinding load in the grinding is 10.3 to 16.7 kPa, and the above grinding step is a coarse grinding step.
TW097141659A 2007-10-29 2008-10-29 Polishing composition for hard disk substrate TWI456033B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007280862 2007-10-29
JP2007337482 2007-12-27
JP2007341301A JP2009163810A (en) 2007-12-28 2007-12-28 Method of manufacturing hard disk substrate
JP2008143257A JP4981750B2 (en) 2007-10-29 2008-05-30 Polishing liquid composition for hard disk substrate

Publications (2)

Publication Number Publication Date
TW200927903A TW200927903A (en) 2009-07-01
TWI456033B true TWI456033B (en) 2014-10-11

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MY (1) MY151756A (en)
TW (1) TWI456033B (en)

Families Citing this family (8)

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Publication number Priority date Publication date Assignee Title
CN102127371B (en) * 2010-12-16 2015-06-10 苏州天科合达蓝光半导体有限公司 Preparation method and use method of polishing solution for silicon carbide
JP5979872B2 (en) * 2011-01-31 2016-08-31 花王株式会社 Manufacturing method of magnetic disk substrate
TWI453273B (en) * 2011-11-07 2014-09-21 Uwiz Technology Co Ltd Slurry composition and use thereof
JP6015259B2 (en) * 2012-09-06 2016-10-26 旭硝子株式会社 Manufacturing method of glass substrate for information recording medium and manufacturing method of magnetic disk
CN103571333B (en) * 2013-08-20 2015-06-17 曾锡强 CMP (Chemical-Mechanical Polishing) polishing liquid with mixed grinding materials for alkaline sapphire substrate and preparation method thereof
US20190153262A1 (en) * 2017-11-20 2019-05-23 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced surface scratching
CN109590820B (en) * 2019-01-02 2021-07-06 中国科学院上海光学精密机械研究所 Method for processing surface roughness of superhard laser crystal
JP7431038B2 (en) * 2019-12-27 2024-02-14 ニッタ・デュポン株式会社 polishing slurry

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1427025A (en) * 2001-06-21 2003-07-02 花王株式会社 Grinding liquid composition
JP2003297777A (en) * 2002-03-29 2003-10-17 Speedfam Co Ltd Composition for polishing, method for modifying the same and method for polishing the same
CN1693406A (en) * 2003-12-24 2005-11-09 美国福吉米股份有限公司 Polishing composition and polishing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1427025A (en) * 2001-06-21 2003-07-02 花王株式会社 Grinding liquid composition
JP2003297777A (en) * 2002-03-29 2003-10-17 Speedfam Co Ltd Composition for polishing, method for modifying the same and method for polishing the same
CN1693406A (en) * 2003-12-24 2005-11-09 美国福吉米股份有限公司 Polishing composition and polishing method

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CN101423746B (en) 2014-03-19
MY151756A (en) 2014-06-30
TW200927903A (en) 2009-07-01
CN101423746A (en) 2009-05-06

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