TWI451465B - Field emission display device - Google Patents
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本發明是有關於一種顯示器，且特別是有關於一種場發射式顯示器。This invention relates to a display, and more particularly to a field emission display.
場發射顯示器的發光原理，是在真空環境下利用電場將材料尖端的電子吸引出，而離開陰極板的場發射電子受陽極上正電壓的加速吸引，撞擊至陽極的螢光粉而發光(Luminescence)。陰極板係作為場電子發射源，而陽極板作為發光源，由陰極板射出之電子撞擊陽極板上之螢光層而發光。The principle of illumination of the field emission display is to draw the electrons at the tip of the material by an electric field in a vacuum environment, and the field emission electrons leaving the cathode plate are attracted by the positive voltage on the anode, and the phosphor powder impinging on the anode emits light (Luminescence). ). The cathode plate serves as a field electron emission source, and the anode plate serves as a light source, and electrons emitted from the cathode plate strike the phosphor layer on the anode plate to emit light.
承上所述，當電子受陽極上正電壓的加速吸引而撞擊至陽極的螢光粉時除了會發光之外也會產生熱。因此，當場發射顯示器於操作一段時間之後，陰極板與陽極板之間會產生明顯的溫度差異。而所述溫度差異會進一步影響陰極板與陽極板之間的電場分佈的均勻性。換言之，當溫度差異越明顯時，陰極板與陽極板之間的電場分佈的均勻性就會越差。而電場分佈的均勻性越差會使電子束產生偏移，進而導致顯示器的顯示品質下降。As described above, when electrons are attracted to the anode of the phosphor by the acceleration of the positive voltage on the anode, heat is generated in addition to the light. Therefore, after the field emission display is operated for a period of time, a significant temperature difference is generated between the cathode plate and the anode plate. The temperature difference further affects the uniformity of the electric field distribution between the cathode plate and the anode plate. In other words, the more uniform the temperature difference, the worse the uniformity of the electric field distribution between the cathode plate and the anode plate. The worse the uniformity of the electric field distribution causes the electron beam to shift, which in turn causes the display quality of the display to deteriorate.
本發明提供一種場發射式顯示器，其可以解決傳統場發射式顯示器之陰極板與陽極板之間因電場分佈的均勻性不佳而導致電子束產生偏移的問題。The invention provides a field emission type display, which can solve the problem that the electron beam is shifted due to the poor uniformity of the electric field distribution between the cathode plate and the anode plate of the conventional field emission type display.
本發明提出一種場發射式顯示器，其包括第一基板、第二基板、間隙結構以及溫度調整層。第一基板與第二基板相對向設置。間隙結構位於第一基板與第二基板之間，且間隙結構具有與第一基板連接之第一端以及與第二基板連接之第二端。當所述場發射式顯示器於操作時，第一端以及第二端之溫度差約為攝氏0度至攝氏20度C。溫度調整層位於第一基板之表面上。The invention provides a field emission display comprising a first substrate, a second substrate, a gap structure and a temperature adjustment layer. The first substrate is disposed opposite to the second substrate. The gap structure is located between the first substrate and the second substrate, and the gap structure has a first end connected to the first substrate and a second end connected to the second substrate. When the field emission display is in operation, the temperature difference between the first end and the second end is about 0 degrees Celsius to 20 degrees Celsius C. The temperature adjustment layer is on the surface of the first substrate.
基於上述，本發明在第一基板之表面上設置溫度調整層，以使顯示器於操作過程之中第一基板與第二基板之間的溫度差異降低。由於第一基板與第二基板之間的溫度差異可以降低，因此第一基板與第二基板之間的電場分佈均勻性可以提高，進而降低電子束產生偏移的情形。如此一來，便可提高顯示器之顯示品質。Based on the above, the present invention provides a temperature adjustment layer on the surface of the first substrate to reduce the temperature difference between the first substrate and the second substrate during operation of the display. Since the temperature difference between the first substrate and the second substrate can be reduced, the uniformity of the electric field distribution between the first substrate and the second substrate can be improved, thereby reducing the occurrence of offset of the electron beam. In this way, the display quality of the display can be improved.
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.
圖1是根據本發明一實施例之場發射式顯示器的局部剖面示意圖。圖1是繪示場發射式顯示器之其中一個畫素單元的局部剖面視意圖。一般來說，場發射式顯示器是由多個畫素單元所構成。因此此領域技術人員根據圖1之畫素單元結構之說明，便可清楚地可以理解場發射式顯示器之架構。1 is a partial cross-sectional view of a field emission display in accordance with an embodiment of the present invention. 1 is a partial cross-sectional view showing one of the pixel units of a field emission type display. In general, a field emission display is composed of a plurality of pixel units. Therefore, the structure of the field emission type display can be clearly understood by those skilled in the art according to the description of the pixel unit structure of FIG.
請參照圖1，本實施例之場發射式顯示器包括第一基板100、第二基板200、間隙結構300以及溫度調整層400。Referring to FIG. 1 , the field emission display of the present embodiment includes a first substrate 100 , a second substrate 200 , a gap structure 300 , and a temperature adjustment layer 400 .
第一基板100包括承載基板102、第一電極層104、電介質層106、電阻層107、電子發射器108以及第二電極層110，其又可稱之為陰極側(cathode side)。The first substrate 100 includes a carrier substrate 102, a first electrode layer 104, a dielectric layer 106, a resistive layer 107, an electron emitter 108, and a second electrode layer 110, which may also be referred to as a cathode side.
承載基板102之材質可為玻璃、石英、有機聚合物、或是不透光/反射材料(例如：導電材料、金屬、晶圓、陶瓷、或其它可適用的材料)、或是其它可適用的材料。承載基板102主要是用來承載顯示器之元件以及線路之用。承載基板102具有內表面102a以及外表面102b。The material of the carrier substrate 102 may be glass, quartz, organic polymer, or an opaque/reflective material (eg, conductive material, metal, wafer, ceramic, or other applicable material), or other applicable materials. material. The carrier substrate 102 is primarily used to carry components of the display and circuitry. The carrier substrate 102 has an inner surface 102a and an outer surface 102b.
第一電極層104位於承載基板102上。更詳細來說，第一電極層104位於承載基板102之內表面102a上。第一電極層104一般是使用金屬材料。然，本發明不限於此，根據其他實施例，第一電極層104也可以使用其他導電材料。例如：合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或其它合適的材料)、或是金屬材料與其它導材料的堆疊層。The first electrode layer 104 is located on the carrier substrate 102. In more detail, the first electrode layer 104 is located on the inner surface 102a of the carrier substrate 102. The first electrode layer 104 is generally made of a metal material. However, the present invention is not limited thereto, and other conductive materials may be used for the first electrode layer 104 according to other embodiments. For example: alloys, nitrides of metallic materials, oxides of metallic materials, oxynitrides of metallic materials, or other suitable materials), or stacked layers of metallic materials and other conductive materials.
電阻層107位於基板100上且覆蓋第一電極層104。電阻層107可包括電阻材料或是電阻材料與絕緣材料兩者之堆疊層。上述之電阻材料可為矽、非晶矽、矽化物、非晶碳、陶瓷材料、半導體氧化物、半導體氮化物、金屬氧化物、金屬氮化物或是其他適用的電阻材料。上述之絕緣材料例如是氧化矽、氮化矽等無機絕緣材料或是有機絕緣材料。電介值層106位於電阻層107上。電介質層106具有多個開口106a，且開口106a貫穿電介質層106以暴露出電阻層107。本發明不限電介質層106之開口106a的數目。The resistance layer 107 is located on the substrate 100 and covers the first electrode layer 104. The resistive layer 107 may comprise a resistive material or a stacked layer of both a resistive material and an insulating material. The above-mentioned resistive material may be tantalum, amorphous germanium, germanide, amorphous carbon, ceramic material, semiconductor oxide, semiconductor nitride, metal oxide, metal nitride or other suitable resistive material. The above insulating material is, for example, an inorganic insulating material such as cerium oxide or tantalum nitride or an organic insulating material. The dielectric layer 106 is located on the resistive layer 107. The dielectric layer 106 has a plurality of openings 106a, and the openings 106a extend through the dielectric layer 106 to expose the resistive layer 107. The invention is not limited to the number of openings 106a of the dielectric layer 106.
電子發射器108位於電介質層106之開口106a內。電子發射器108可為奈米碳管電子發射端或是其他種尖端放電形式之電子發射端。此外，本發明不對電子發射器108的數目作限制。The electron emitter 108 is located within the opening 106a of the dielectric layer 106. The electron emitter 108 can be an electron emitting end of a carbon nanotube or other type of electron emitting end in the form of a tip discharge. Moreover, the present invention does not limit the number of electron emitters 108.
第二電極層110位於電介質層106之頂表面上。根據本實施例，第二電極層110位於電介質層106之頂表面且未填入電介質層106之開口106a內。因此第二電極層110是圍繞於電子發射器108頂部之周圍，並且與電子發射器108之間不電性連接。在此，第二電極層110可進一步與閘極線(未繪示)電性連接。第二電極層110之材質包括金屬，然本發明不限於此。換言之，第二電極層110也可以使用其他導電材料。例如：合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或其它合適的材料)、或是金屬材料與其它導材料的堆疊層。The second electrode layer 110 is on the top surface of the dielectric layer 106. According to this embodiment, the second electrode layer 110 is located on the top surface of the dielectric layer 106 and is not filled in the opening 106a of the dielectric layer 106. The second electrode layer 110 thus surrounds the periphery of the top of the electron emitter 108 and is not electrically connected to the electron emitter 108. Here, the second electrode layer 110 can be further electrically connected to a gate line (not shown). The material of the second electrode layer 110 includes a metal, but the invention is not limited thereto. In other words, the second electrode layer 110 can also use other conductive materials. For example: alloys, nitrides of metallic materials, oxides of metallic materials, oxynitrides of metallic materials, or other suitable materials), or stacked layers of metallic materials and other conductive materials.
另外，第二基板200設置於第一基板100之對向側，且第二基板200包括承載基板202、發光材料層204以及第三電極層206，其又可稱之為陽極側(anode side)。In addition, the second substrate 200 is disposed on the opposite side of the first substrate 100, and the second substrate 200 includes the carrier substrate 202, the luminescent material layer 204, and the third electrode layer 206, which may be referred to as an anode side. .
承載基板202之材質可為玻璃、石英、有機聚合物、或是不透光/反射材料(例如：導電材料、金屬、晶圓、陶瓷、或其它可適用的材料)、或是其它可適用的材料。承載基板202主要是用來承載顯示器之元件以及線路之用。The material of the carrier substrate 202 may be glass, quartz, organic polymer, or an opaque/reflective material (eg, conductive material, metal, wafer, ceramic, or other applicable material), or other applicable materials. material. The carrier substrate 202 is primarily used to carry the components of the display as well as the circuitry.
發光材料層204位於承載基板202上。在此，發光材料層204包括磷光材料層或是螢光材料層。在此，顯示器之各畫素單元中的發光材料層204可為紅色磷光/螢光材料層、綠色磷光/螢光材料層或是藍色磷光/螢光材料層。The luminescent material layer 204 is located on the carrier substrate 202. Here, the luminescent material layer 204 comprises a phosphor layer or a layer of phosphor material. Here, the luminescent material layer 204 in each pixel unit of the display may be a red phosphorescent/fluorescent material layer, a green phosphorescent/fluorescent material layer or a blue phosphorescent/fluorescent material layer.
第三電極層206覆蓋發光材料層204。第三電極層206主要是作為第一基板100內側的對向電極，以使得電子發射器108所產生的電子束可以往第三電極層206加速撞擊以激發發光材料層204放射出特定的色光。第三電極層206可採用金屬導電材料，其如是鋁、鉻、碳、或其它合適的金屬導電材料、或者是上述至少二者之堆疊層。The third electrode layer 206 covers the luminescent material layer 204. The third electrode layer 206 is mainly used as a counter electrode on the inner side of the first substrate 100, so that the electron beam generated by the electron emitter 108 can be accelerated to the third electrode layer 206 to excite the luminescent material layer 204 to emit a specific color light. The third electrode layer 206 may be a metallic conductive material such as aluminum, chromium, carbon, or other suitable metallic conductive material, or a stacked layer of at least two of the foregoing.
間隙結構300位於第一基板100與第二基板200之間，且間隙結構300具有第一端302以及第二端304，第一端302與第一基板100連接且第二端304與第二基板200連接。間隙結構300主要是用來支撐第一基板100與第二基板200，以使第一基板100與第二基板200之間具有真空腔體。間隙結構300之材質可採用玻璃、感光材料、絕緣材料或是其他合適的材料。The gap structure 300 is located between the first substrate 100 and the second substrate 200, and the gap structure 300 has a first end 302 and a second end 304. The first end 302 is connected to the first substrate 100 and the second end 304 and the second substrate 200 connections. The gap structure 300 is mainly used to support the first substrate 100 and the second substrate 200 such that a vacuum chamber is provided between the first substrate 100 and the second substrate 200. The material of the gap structure 300 may be glass, a photosensitive material, an insulating material or other suitable materials.
溫度調整層400位於第一基板100之表面上。根據本實施例，溫度調整層400是位於第一基板100之承載基板102的外表面102b上。上述之溫度調整層400包括電阻材料，其可包括金屬或是金屬氧化物。The temperature adjustment layer 400 is located on the surface of the first substrate 100. According to the present embodiment, the temperature adjustment layer 400 is on the outer surface 102b of the carrier substrate 102 of the first substrate 100. The temperature adjustment layer 400 described above includes a resistive material, which may include a metal or a metal oxide.
根據本發明之一實施例，上述場發射式顯示器更包括溫度調整電源500，其與溫度調整層400電性連接。溫度調整電源500可提供溫度調整層400特定的電源，以控制溫度調整層400具有特定的溫度。換言之，藉由溫度調整電源500的控制，可以使得溫度調整層400進行升溫或是降溫。According to an embodiment of the invention, the field emission display further includes a temperature adjustment power supply 500 electrically connected to the temperature adjustment layer 400. The temperature adjustment power supply 500 can provide a specific power supply to the temperature adjustment layer 400 to control the temperature adjustment layer 400 to have a specific temperature. In other words, the temperature adjustment layer 400 can be heated or lowered by the control of the temperature adjustment power supply 500.
承上所述，當所述場發射式顯示器於操作時，第一基板100與第二基板200之間可產生電場，且第二電極層110可誘發電子發射器108產生電子束，且所述電子束可順著電場而向第三電極層206加速，進而以撞擊發光材料層204以發出特定波長範圍的光線。然而，當電子束射向第三電極層206以撞擊發光材料層204之過程之中也會同時產生熱能，而使得第一基板100與第二基板200兩者之間具有明顯的溫度差異。而上述之溫度差異會導致間隙結構300之電阻呈現梯度變化，亦即間隙結構300越靠近第一基板100之處的電阻值越低，而間隙結構300越靠近第二基板200之處的電阻值越高。舉例來說，傳統場發射式顯示器之間隙結構兩端的電阻值差異可達120%。若間隙結構300的兩端302、304之電阻值有明顯的差異，就會影響第一基板100與第二基板200之間的電場發佈，進而導致電子束的路徑產生偏移。As described above, when the field emission display is in operation, an electric field can be generated between the first substrate 100 and the second substrate 200, and the second electrode layer 110 can induce the electron emitter 108 to generate an electron beam, and the The electron beam can be accelerated toward the third electrode layer 206 along the electric field, thereby striking the luminescent material layer 204 to emit light of a particular wavelength range. However, when the electron beam is directed toward the third electrode layer 206 to strike the luminescent material layer 204, thermal energy is also generated at the same time, so that there is a significant temperature difference between the first substrate 100 and the second substrate 200. The temperature difference described above causes the resistance of the gap structure 300 to exhibit a gradient change, that is, the resistance value of the gap structure 300 is closer to the first substrate 100, and the resistance value of the gap structure 300 is closer to the second substrate 200. The higher. For example, the difference in resistance between the gap structures of a conventional field emission display can reach 120%. If there is a significant difference in the resistance values of the two ends 302, 304 of the gap structure 300, the electric field is released between the first substrate 100 and the second substrate 200, which causes the path of the electron beam to shift.
基此，本實施例在第一基板100之表面上設置了溫度調整層400。亦即，藉由將溫度調整層400的溫度調高，以加熱第一基板100(特別是間隙結構300之第一端302)以使得第一基板100與第二基板200之間的溫度差異降低，特別是，使得間隙結構300之第一端302以及第二端304之間的溫度差異降低。在本實施例中，透過溫度調整層400的加熱作用，可使得間隙結構300之第一端302以及第二端304之溫度差約為攝氏0度至攝氏20度，較佳的是，間隙結構300之第一端302以及第二端304之溫度差約為攝氏0度至攝氏10度，更佳的是，間隙結構300之第一端302以及第二端304的溫度相當。Accordingly, in the present embodiment, the temperature adjustment layer 400 is disposed on the surface of the first substrate 100. That is, the temperature of the temperature adjustment layer 400 is raised to heat the first substrate 100 (particularly the first end 302 of the gap structure 300) such that the temperature difference between the first substrate 100 and the second substrate 200 is lowered. In particular, the temperature difference between the first end 302 and the second end 304 of the gap structure 300 is reduced. In this embodiment, the temperature difference between the first end 302 and the second end 304 of the gap structure 300 is such that the temperature difference between the first end 302 and the second end 304 of the gap structure 300 is about 0 degrees Celsius to 20 degrees Celsius, and preferably, the gap structure is The temperature difference between the first end 302 and the second end 304 of the 300 is about 0 degrees Celsius to 10 degrees Celsius, and more preferably, the temperatures of the first end 302 and the second end 304 of the gap structure 300 are equivalent.
承上所述，在本實施例中，透過溫度調整層400的加熱作用，可使得間隙結構300之第一端302以及第二端304之溫度差異降低，便可使得間隙結構300之第一端302以及第二端304的電阻差異下降。而當間隙結構300具有均勻的電阻分佈時，第一基板100與第二基板200之間的電場就不會因為間隙結構300的電阻不均而有分佈不均勻的問題。因此，如此一來，電子發射器108產生的電子束於此電場中的傳遞路徑就不會產生偏移，進而使得顯示器的顯示品質獲得改善。As described above, in the present embodiment, the temperature difference between the first end 302 and the second end 304 of the gap structure 300 can be reduced by the heating effect of the temperature adjusting layer 400, so that the first end of the gap structure 300 can be made. The difference in resistance between 302 and second end 304 decreases. When the gap structure 300 has a uniform resistance distribution, the electric field between the first substrate 100 and the second substrate 200 does not have a problem of uneven distribution due to the unevenness of the gap structure 300. Therefore, in this way, the transmission path of the electron beam generated by the electron emitter 108 in the electric field does not shift, thereby improving the display quality of the display.
圖2是根據本發明另一實施例之場發射式顯示器的局部剖面示意圖。圖2之實施例與圖1之實施例相似，因此相同的元件以相同符號表示，且不再重複說明。圖2之實施例與圖1之實施例不相同之處在於，第一電極層104以及溫度調整層400都設置於第一基板100之承載基板102的內表面102a上，且第一電極層104與溫度調整層400彼此電性絕緣。2 is a partial cross-sectional view of a field emission display in accordance with another embodiment of the present invention. The embodiment of Fig. 2 is similar to the embodiment of Fig. 1, and therefore the same elements are denoted by the same reference numerals and the description thereof will not be repeated. The embodiment of FIG. 2 is different from the embodiment of FIG. 1 in that the first electrode layer 104 and the temperature adjustment layer 400 are disposed on the inner surface 102a of the carrier substrate 102 of the first substrate 100, and the first electrode layer 104 The temperature adjustment layer 400 is electrically insulated from each other.
更詳細來說，溫度調整層400是設置在承載基板102的內表面102a上，且溫度調整層400上另外覆蓋有絕緣層120。而第一電極層104是形成在絕緣層120上。因此藉由絕緣層120可使得第一電極層104與溫度調整層400彼此電性絕緣。In more detail, the temperature adjustment layer 400 is disposed on the inner surface 102a of the carrier substrate 102, and the temperature adjustment layer 400 is additionally covered with the insulation layer 120. The first electrode layer 104 is formed on the insulating layer 120. Therefore, the first electrode layer 104 and the temperature adjustment layer 400 can be electrically insulated from each other by the insulating layer 120.
類似地，在本實施例中，溫度調整層400與溫度調整電源500電性連接。溫度調整電源500可提供溫度調整層400特定的電源，以控制溫度調整層400具有特定的溫度。換言之，藉由溫度調整電源500的控制，可以使得溫度調整層400進行升溫或是降溫。Similarly, in the embodiment, the temperature adjustment layer 400 is electrically connected to the temperature adjustment power source 500. The temperature adjustment power supply 500 can provide a specific power supply to the temperature adjustment layer 400 to control the temperature adjustment layer 400 to have a specific temperature. In other words, the temperature adjustment layer 400 can be heated or lowered by the control of the temperature adjustment power supply 500.
承上所述，在本實施例中，透過溫度調整層400的加熱作用可使得間隙結構300之第一端302以及第二端304之溫度差異降低，進而使得間隙結構300之第一端302以及第二端304的電阻差異下降。而當間隙結構300具有均勻的電阻分佈時，第一基板100與第二基板200之間的電場就不會因為間隙結構300的電阻不均而造成分佈不均。因此，如此一來，電子發射器108產生的電子束於所述電場中的傳遞路徑就不會產生偏移。如此，所述顯示器的顯示品質便可以獲得改善。As described above, in the present embodiment, the heating effect of the temperature adjusting layer 400 can reduce the temperature difference between the first end 302 and the second end 304 of the gap structure 300, thereby causing the first end 302 of the gap structure 300 and The difference in resistance of the second end 304 decreases. When the gap structure 300 has a uniform resistance distribution, the electric field between the first substrate 100 and the second substrate 200 is not unevenly distributed due to the uneven resistance of the gap structure 300. Therefore, as a result, the transmission path of the electron beam generated by the electron emitter 108 in the electric field does not shift. As such, the display quality of the display can be improved.
在上述圖1以及圖2之實施例中，溫度調整層400是全面地覆蓋於第一基板100之表面上。更詳細來說，圖1以及圖2之實施例中的溫度調整層400的佈局方式如圖3A所示，亦即溫度調整層400是未圖案化之膜層以覆蓋在承載基板102之表面上。間隙結構300位於承載基板102上，且溫度調整層400與溫度調整電源500電性連接。但是本發明不限於此，根據其他實施例，溫度調整層400亦可以是圖案化膜層，如下所述。In the above embodiments of FIGS. 1 and 2, the temperature adjustment layer 400 is entirely overlaid on the surface of the first substrate 100. In more detail, the layout of the temperature adjustment layer 400 in the embodiment of FIGS. 1 and 2 is as shown in FIG. 3A, that is, the temperature adjustment layer 400 is an unpatterned film layer overlying the surface of the carrier substrate 102. . The gap structure 300 is located on the carrier substrate 102, and the temperature adjustment layer 400 is electrically connected to the temperature adjustment power source 500. However, the present invention is not limited thereto. According to other embodiments, the temperature adjustment layer 400 may also be a patterned film layer, as described below.
如圖3B所示，在此，溫度調整層400為圖案化膜層，即溫度調整層400具有多個圖案。而溫度調整層400之圖案是對應間隙結構300設置。在此實施例中，溫度調整層400之圖案是設置在間隙結構300的底下，且溫度調整層400之圖案皆與溫度調整電源500電性連接。As shown in FIG. 3B, here, the temperature adjustment layer 400 is a patterned film layer, that is, the temperature adjustment layer 400 has a plurality of patterns. The pattern of the temperature adjustment layer 400 is set corresponding to the gap structure 300. In this embodiment, the pattern of the temperature adjustment layer 400 is disposed under the gap structure 300, and the patterns of the temperature adjustment layer 400 are electrically connected to the temperature adjustment power source 500.
此外，如圖3C所示，在此，溫度調整層400為圖案化膜層，即溫度調整層400具有多個圖案。而溫度調整層400之圖案是對應間隙結構300設置。在此實施例中，溫度調整層400之圖案是設置在間隙結構300的兩側，溫度調整層400之圖案並不與間隙結構300接觸，且溫度調整層400之圖案皆與溫度調整電源500電性連接。Further, as shown in FIG. 3C, here, the temperature adjustment layer 400 is a patterned film layer, that is, the temperature adjustment layer 400 has a plurality of patterns. The pattern of the temperature adjustment layer 400 is set corresponding to the gap structure 300. In this embodiment, the pattern of the temperature adjustment layer 400 is disposed on both sides of the gap structure 300, the pattern of the temperature adjustment layer 400 is not in contact with the gap structure 300, and the pattern of the temperature adjustment layer 400 is electrically connected to the temperature adjustment power source 500. Sexual connection.
此外，如圖3C所示，在此，溫度調整層400為圖案化膜層，即溫度調整層400具有多個圖案。而溫度調整層400之圖案是對應間隙結構300設置。在此實施例中，溫度調整層400之圖案是設置在間隙結構300的兩側，且溫度調整層400之圖案皆與溫度調整電源500電性連接。Further, as shown in FIG. 3C, here, the temperature adjustment layer 400 is a patterned film layer, that is, the temperature adjustment layer 400 has a plurality of patterns. The pattern of the temperature adjustment layer 400 is set corresponding to the gap structure 300. In this embodiment, the pattern of the temperature adjustment layer 400 is disposed on both sides of the gap structure 300, and the patterns of the temperature adjustment layer 400 are electrically connected to the temperature adjustment power source 500.
再者，溫度調整層400之圖案與間隙結構300之間的設置方式還可以是如圖3D所示。在此實施例中，溫度調整層400之圖案條狀式的排列於承載基板102上，且溫度調整層400之圖案皆與溫度調整電源500電性連接。而間隙結構300是設置在溫度調整層400之圖案上。Furthermore, the arrangement between the pattern of the temperature adjustment layer 400 and the gap structure 300 may also be as shown in FIG. 3D. In this embodiment, the pattern of the temperature adjustment layer 400 is arranged on the carrier substrate 102, and the patterns of the temperature adjustment layer 400 are electrically connected to the temperature adjustment power source 500. The gap structure 300 is disposed on the pattern of the temperature adjustment layer 400.
另外，溫度調整層400之圖案與間隙結構300之間的設置方式還可以是如圖3E所示。在此實施例中，溫度調整層400之圖案條狀式的傾斜排列於承載基板102上，且溫度調整層400之圖案皆與溫度調整電源500電性連接。而間隙結構300是設置在溫度調整層400之圖案上。In addition, the arrangement between the pattern of the temperature adjustment layer 400 and the gap structure 300 may also be as shown in FIG. 3E. In this embodiment, the pattern strips of the temperature adjustment layer 400 are obliquely arranged on the carrier substrate 102, and the patterns of the temperature adjustment layer 400 are electrically connected to the temperature adjustment power source 500. The gap structure 300 is disposed on the pattern of the temperature adjustment layer 400.
承上所述，無論溫度調整層400於承載基板102上是以何種形式或排列設置，藉由溫度調整層400的加熱作用都可以使得間隙結構300之第一端302以及第二端304之溫度差異降低，進而使得間隙結構300之第一端302以及第二端304的電阻差異下降。而當間隙結構300具有均勻的電阻分佈時，第一基板100與第二基板200之間的電場分佈就不會因為間隙結構300的電阻不均而造成變化。因此，如此一來，電子發射器108產生的電子束的路徑就不會產生偏移，進而使得顯示器的顯示品質獲得改善。As described above, regardless of the form or arrangement of the temperature adjustment layer 400 on the carrier substrate 102, the heating of the temperature adjustment layer 400 can cause the first end 302 and the second end 304 of the gap structure 300. The temperature difference is reduced, which in turn causes the difference in resistance between the first end 302 and the second end 304 of the gap structure 300 to decrease. When the gap structure 300 has a uniform resistance distribution, the electric field distribution between the first substrate 100 and the second substrate 200 does not change due to the unevenness of the gap structure 300. Therefore, as a result, the path of the electron beam generated by the electron emitter 108 is not shifted, thereby improving the display quality of the display.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.
100‧‧‧第一基板100‧‧‧First substrate
102‧‧‧承載基板102‧‧‧Loading substrate
102a‧‧‧內表面102a‧‧‧ inner surface
102b‧‧‧外表面102b‧‧‧ outer surface
104‧‧‧第一電極層104‧‧‧First electrode layer
106‧‧‧電介質層106‧‧‧Dielectric layer
106a‧‧‧開口106a‧‧‧ openings
107‧‧‧電阻層107‧‧‧resistance layer
108‧‧‧電子發射器108‧‧‧Electronic transmitter
110‧‧‧第二電極層110‧‧‧Second electrode layer
120‧‧‧絕緣層120‧‧‧Insulation
200‧‧‧第二基板200‧‧‧second substrate
202‧‧‧承載基板202‧‧‧Loading substrate
204‧‧‧發光材料層204‧‧‧ luminescent material layer
206‧‧‧第三電極層206‧‧‧ third electrode layer
300‧‧‧間隙結構300‧‧‧ gap structure
302‧‧‧第一端302‧‧‧ first end
304‧‧‧第二端304‧‧‧ second end
400‧‧‧溫度調整層400‧‧‧temperature adjustment layer
500‧‧‧溫度調整電源500‧‧‧temperature adjustment power supply
圖1是根據本發明一實施例之場發射式顯示器的局部剖面示意圖。1 is a partial cross-sectional view of a field emission display in accordance with an embodiment of the present invention.
圖2是根據本發明另一實施例之場發射式顯示器的局部剖面示意圖。2 is a partial cross-sectional view of a field emission display in accordance with another embodiment of the present invention.
圖3A至圖3E是本發明數個實施例之場發射式顯示器中溫度調整層與間隙結構的分佈示意圖。3A to 3E are schematic diagrams showing the distribution of a temperature adjustment layer and a gap structure in a field emission type display according to several embodiments of the present invention.
100‧‧‧第一基板100‧‧‧First substrate
102‧‧‧承載基板102‧‧‧Loading substrate
102a‧‧‧內表面102a‧‧‧ inner surface
102b‧‧‧外表面102b‧‧‧ outer surface
104‧‧‧第一電極層104‧‧‧First electrode layer
106‧‧‧電介質層106‧‧‧Dielectric layer
106a‧‧‧開口106a‧‧‧ openings
107‧‧‧電阻層107‧‧‧resistance layer
108‧‧‧電子發射器108‧‧‧Electronic transmitter
110‧‧‧第二電極層110‧‧‧Second electrode layer
200‧‧‧第二基板200‧‧‧second substrate
202‧‧‧承載基板202‧‧‧Loading substrate
204‧‧‧發光材料層204‧‧‧ luminescent material layer
206‧‧‧第三電極層206‧‧‧ third electrode layer
300‧‧‧間隙結構300‧‧‧ gap structure
302．．．第一端302. . . First end
304．．．第二端304. . . Second end
400．．．溫度調整層400. . . Temperature adjustment layer
500．．．溫度調整電源500. . . Temperature adjustment power supply
Claims (9)
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| TW463204B (en) * | 1997-12-17 | 2001-11-11 | Motorola Inc | Field emission device having a composite spacer |
| US20080116809A1 (en) * | 2006-11-20 | 2008-05-22 | Sang-Hun Park | Light emission device and display device |
| TW201123250A (en) * | 2009-12-30 | 2011-07-01 | Hon Hai Prec Ind Co Ltd | Field emission cathode structure and display using the same |
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| TW463204B (en) * | 1997-12-17 | 2001-11-11 | Motorola Inc | Field emission device having a composite spacer |
| US20080116809A1 (en) * | 2006-11-20 | 2008-05-22 | Sang-Hun Park | Light emission device and display device |
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