TW463204B - Field emission device having a composite spacer - Google Patents
Field emission device having a composite spacer Download PDFInfo
- Publication number
- TW463204B TW463204B TW087116290A TW87116290A TW463204B TW 463204 B TW463204 B TW 463204B TW 087116290 A TW087116290 A TW 087116290A TW 87116290 A TW87116290 A TW 87116290A TW 463204 B TW463204 B TW 463204B
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- conductive layer
- layer
- cathode
- field emission
- composite spacer
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/241—Manufacture or joining of vessels, leading-in conductors or bases the vessel being for a flat panel display
- H01J9/242—Spacers between faceplate and backplate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/54—Screens on or from which an image or pattern is formed, picked-up, converted, or stored; Luminescent coatings on vessels
- H01J1/62—Luminescent screens; Selection of materials for luminescent coatings on vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/028—Mounting or supporting arrangements for flat panel cathode ray tubes, e.g. spacers particularly relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/86—Vessels; Containers; Vacuum locks
- H01J29/864—Spacers between faceplate and backplate of flat panel cathode ray tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/18—Assembling together the component parts of electrode systems
- H01J9/185—Assembling together the component parts of electrode systems of flat panel display devices, e.g. by using spacers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/02—Arrangements for eliminating deleterious effects
- H01J2201/025—Arrangements for eliminating deleterious effects charging
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
- H01J2329/86—Vessels
- H01J2329/8625—Spacing members
- H01J2329/863—Spacing members characterised by the form or structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
- H01J2329/86—Vessels
- H01J2329/8625—Spacing members
- H01J2329/864—Spacing members characterised by the material
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Abstract
Description
五、發明說明(ι) 有關申請參考 有關主題#姐- 製作方法之美題為具有複合間隔物之場發射器之 並指定給同二申::申請,其律㈣970 91 ’於同曰申請 發明領域 發^:關於場發射裝置及特別關於場發射顯示。 極板之間τI眾=Γ隔:結構於場發射顯示之陰極與陽 之分隔。彼箄必葙週隔物結構可維持陰極與陽極間 .…須維持陰極與陽極間的電位差。 但間隔物能負面影孿在門ρ3哭μ匕 此自险# #14 如響在間&益附近之電子流向陽極。某 因而子可以靜電方式使間隔物之表面充電’ 物附。以Π與所企望者不同。錄 間隔物與陰極電子流之失真。同時亦可在 在發射顯示領域中,此種接近 可引起顯示器產生之影像Π = ?處之電子流失真, -間隔物之位置匕 種失真可因在每 成為可見到的 像中產生—黑暗區域’而使間隔物 題數間::曾試圖解決間隔物充電有關之問 哺例如·在本技蟄中.早已熟知提一呈 物,該表面之表面電隹:甚低,足可移:、表面之間隔 電子,並且此表面電姐丨已夠高,可引起之衝撞 ^ ,, t _ /_ 」<文善由%極流险;ί®夕 電^引起的功率損耗。此電阻性表 ^ •3由以具有理想電阻V. Description of the invention (ι) For related applications, please refer to the relevant subject # 姐-The beauty of the production method is titled Field Emitter with Composite Spacer and is assigned to Tong Er Shen :: Application, its law ㈣ 91 91 91 ^: About the field emission device and especially the field emission display. ΤI between the plates = Γ separation: The structure separates the cathode from the anode in field emission display. The surrounding separator structure can maintain the cathode and anode ... the potential difference between the cathode and the anode must be maintained. But the spacer can negatively affect the gate ρ3 crying. This self-risk # # 14 As the electrons ringing near the & benefit flow to the anode. Someone can electrostatically charge the surface of the spacer ’. It is different from those who hope. Distortion of spacer and cathode electron flow. At the same time, in the field of emission display, this proximity can cause distortion of the electron flow at the image produced by the display at Π =?,-The distortion of the position of the spacer can be generated in every visible image-dark area 'And make the spacer a few questions :: I have tried to solve the problems related to the charging of the spacer. For example, in this technique. It is well known to mention a presentation, the surface of the surface is very low, enough to move :, The space between the surface electrons is high enough to cause a collision ^ ,, t _ / _ ”&wen; the power loss caused by% pole current risk; ί evening electricity ^. This resistive meter ^ • 3 has the ideal resistance
C:\ProgramFiks\Patent\54902.ptd 第 5 頁 46320 五 '發明說明(2) :薄:’將間隔物塗層而實現。但此種薄膜易受機械損 :丄及/或改變,如處理間隔物期間所發生者。此等薄膜 響pi : f陰ί :化學不相容性。&化學不相容性可負面影 ‘::之%發射器之發射特性。此夕卜,塗層間隔物在 裂造上亦相當困難。 f間隔物问度上提供額外獨立控制之電極,以用來控制 壓分布’已為此技藝所熟知之事。但此種 驟,J ί I ; : ^括額外之間隔物電擊形成之處理步 :當= 易於受到機械之損,。此種以往技藝之 4 ϊ此亦使用額外之電壓泝 上,Α與τ @ # 將電壓加於間隔物電極 上此舉可增加裝備之電源需求。 因此,存在著一種改善場發射裝置之 隔物可降低電子流之失真以及 之間 圖式之簡略說明 1幻度之功率知耗。 截^圖?圖式為根據本發明之場發射裝置之—具體實例之 非C 2明簡明及清晰計,®中所示之元件,並 ::際尺寸1如’元件之某些尺寸,彼此間已被誇大。 本發明係供具有本複合間隔器物 合間隔物有-第一層,其可由介電。母:複 材料製成,尚有一導電層聯接於第—居 1 5 =大 極,而第一層接近陽極。導電層使電^ :層接、去 間,俾使間隔層表面之充電可以^子二:合間隔物鞋 … ^ k η °控制之充電由於有C: \ ProgramFiks \ Patent \ 54902.ptd Page 5 46320 Five 'Explanation of the Invention (2): Thin:' The spacer is realized by coating. However, such films are susceptible to mechanical damage: and / or changes, such as those that occur during the handling of spacers. These films ring pi: f y: chemical incompatibility. & Chemical incompatibility can negatively affect ‘::% emission characteristics of the emitter. Moreover, coating spacers are also quite difficult to crack. The f-spacer provides additional independently controlled electrodes for controlling pressure distribution ', which is well known in the art. But in this step, J ί I;: ^ Including the processing steps for the formation of additional spacers by electric shock: When = = vulnerable to mechanical damage. This previous technique 4 also uses additional voltage traces. A and τ @ # apply voltage to the spacer electrode. This can increase the power requirements of the equipment. Therefore, there is a kind of improved field emission device which can reduce the distortion of the electron flow and a brief explanation of the figure. Cutaway? The diagram is a field emission device according to the present invention—a specific example of the non-C 2 concise and clear plan, the components shown in ®, and :: Dimensions 1 such as' Some dimensions of the components, each other Time has been exaggerated. The present invention provides a composite spacer having the first-layer, which can be made of a dielectric. Female: Made of composite material, there is still a conductive layer connected to the first-Ju 15 = large pole, and the first layer is close to the anode. The conductive layer makes electricity ^: layer-by-layer, de-interval, so that the charging of the surface of the spacer layer can be made ^ Second: combining spacer shoes ... ^ k η ° controlled charging due to
^63204 五、發明說明(3) ----- 間隔!之存在’可提供電子軌道之降低之失真。複合間隔 物^南度大於_微求,SI此可使本發明之複混合間隔物 在尚壓場發射裝置中非常有用,肖裝置係在陰極與陽極間 ^電位差超過25 00伏特之情況下操作。在本發明之一具體 實例中,場發射裝置為具有複合間隔物之場發射顯示器’ 該間隔物對場發射顯示器之觀者而言,可以看見。 此唯一圖不為根據本發明之場發射顯示器(FED)1 〇〇之截 面圖。FED 100有一陰極1〇2與陽極1〇4相對。一騰空區域 106在陰極102與陽極1〇4之間》騰空區域1〇6中之壓力小於 大約1 0 6托。複合間隔物1 〇 8延伸於陰極1 〇 2與陽極1 〇 4之 間。複合間隔物1 0 8可提供機械支撐以維持陰極丨〇 2與陽極 1 0 4之間的分隔。複合間隔物1 〇 8尚有一特性,即改善複合 間隔物108之靜電充電。複合間隔物1〇8之靜電充電之控制 可使在FED 1 00中之電子流1 32執道之失真亦受到控制《在 本具體實例圖示中,複合間隔物1 〇 8有一特性,可使FED 1 0 0之觀察者在其操作期間看不見間隔物。 陰極1 0 2含一基質11 6,可由玻璃及珪造成。基質11 6配 置後’陰極導體11 8可包含一薄鉬層。一介電層1 20即形成 於陰極導體118之上。介電層120可由二氧化珪製成。介電 層1 2 0限定許多放射井1 2 2,井中配置一個電子放射器 124。在圖中之具體實例中,電子放射器124包含spindt接 頭。 但是,根據本發明之場放射裝置並不限於s p i n d t接頭電 子源。例如,一放射碳薄膜亦可用來做為陰極之電子源。^ 63204 V. Description of the Invention (3) ----- Interval! Presence 'can provide reduced distortion of the electron orbit. The composite spacer ^ South degree is greater than _ micro seek, SI This makes the complex mixed spacer of the present invention very useful in the pressure field emission device. The Shaw device is operated under the condition that the potential difference between the cathode and anode exceeds 25 00 volt . In a specific example of the present invention, the field emission device is a field emission display having a composite spacer, and the spacer is visible to a viewer of the field emission display. This unique figure is not a cross-sectional view of a field emission display (FED) 100 according to the present invention. The FED 100 has a cathode 102 and an anode 104. The pressure in a vacated region 106 between the cathode 102 and the anode 104 is less than about 106 Torr. The composite spacer 108 extends between the cathode 102 and the anode 104. The composite spacer 108 may provide mechanical support to maintain separation between the cathode 102 and the anode 104. The composite spacer 108 also has a feature of improving the electrostatic charging of the composite spacer 108. The electrostatic charging control of the composite spacer 108 can control the distortion of the electron flow 1 32 in the FED 100. In the illustration of this specific example, the composite spacer 108 has a characteristic that enables Observers of FED 1 0 0 cannot see the spacers during their operation. The cathode 102 contains a substrate 116, which can be made of glass and tritium. After the substrate 116 is configured, the 'cathode conductor 118 can include a thin molybdenum layer. A dielectric layer 120 is formed on the cathode conductor 118. The dielectric layer 120 may be made of hafnium dioxide. The dielectric layer 1 2 0 defines a number of radiation wells 12 2 in which an electron emitter 124 is arranged. In the specific example in the figure, the electron emitter 124 includes a spindt connector. However, the field emission device according to the present invention is not limited to a sp i n d t junction electron source. For example, a radioactive carbon film can also be used as an electron source for the cathode.
C:\Program Files\Patent\54902.ptd 第 7 頁 s3 2〇4 五、發明說明(4) ' ------- 第:含許多門抽出電極。第一門抽出電極126及 用;如圖中之說明。通常,門抽出電極係 用采作選擇性電子放射器之定址。 上透明基f 110 ’―陽極導體112即配置其 極並可含一氧化麵錫。許多碟114配置在陽 極導體112之上。磷114在電子發射器124之對面。 第一電壓源136連接至陽極導體112 .第二電壓 8 接至第二門抽出電極128。第三電壓源14〇連接至第一門抽 出電極126,及一第四電壓源連接至陰極導體118。 複和間隔物108延伸在陰極1〇2及陽極1〇4之間以提供機 械支撐。複合間隔物108之高度足以協助阻止陽極1〇4及陰 極102間之電弧。例如,陽極1〇4及陰極1〇2之電位差如大 於2500 ,複合間隔物108之高度則大於約5〇()微米,宜在 7 00,1 20 0微米之範圍。複合間隔物1〇8之一端在未被磷 114盍住之表面與陽極104接觸;複合間隔物1〇8之相反端 與陰極102在未限定發射器壁122處接觸。 根據本發明,複合間隔物〗〇 8包括第一層丨〇 7,該層自複 合間隔物108末端之中間向陽極伸。第一層1〇7之高度 為Η。複合間隔物1〇8亦包括一導電層1〇9與第一層1〇7連 接’並向陰極102延伸。導電層丨09有一導電層表面丨丨1配 置在騰空區106之中。導電層109之高度為h。 第一層107包括一介電材料或體電組材料。第一層1(Π應 選擇為能承受所加電壓之材料。第一層1〇7最好有一高工 作功能,以便改進自第一層1 07之亂真電子放射。第一層C: \ Program Files \ Patent \ 54902.ptd Page 7 s3 2040 V. Description of the invention (4) '------- Section: Contains many gate extraction electrodes. The first gate extraction electrode 126 is used; as illustrated in the figure. Generally, the gate extraction electrode is used for addressing as a selective electron emitter. The upper transparent base f 110 '-the anode conductor 112 is configured with its pole and may contain a tin oxide surface. Many dishes 114 are disposed on the anode conductor 112. Phosphorus 114 is opposite the electron emitter 124. The first voltage source 136 is connected to the anode conductor 112. The second voltage 8 is connected to the second gate extraction electrode 128. A third voltage source 14 is connected to the first gate extraction electrode 126, and a fourth voltage source is connected to the cathode conductor 118. Composite spacer 108 extends between cathode 102 and anode 104 to provide mechanical support. The height of the composite spacer 108 is sufficient to help prevent arcing between the anode 104 and the cathode 102. For example, if the potential difference between the anode 104 and the cathode 102 is greater than 2500, the height of the composite spacer 108 is greater than about 50 micrometers, preferably in the range of 700,1200 micrometers. One end of the composite spacer 108 is in contact with the anode 104 on a surface not held by the phosphorus 114; the opposite end of the composite spacer 108 is in contact with the cathode 102 at an undefined emitter wall 122. According to the present invention, the composite spacer 108 includes a first layer 107, which extends from the middle of the end of the composite spacer 108 toward the anode. The height of the first layer 107 is Η. The composite spacer 108 also includes a conductive layer 109 connected to the first layer 107 and extended toward the cathode 102. The conductive layer 09 has a conductive layer surface 1 and is disposed in the vacant region 106. The height of the conductive layer 109 is h. The first layer 107 includes a dielectric material or a bulk material. The first layer 1 (Π should be selected to withstand the applied voltage. The first layer 107 should preferably have a high working function in order to improve the true electron emission from the first layer 107. The first layer
C:\Program Files\Patent\54902. ptd 第 8 頁 463204 五、發明說明(5) 107最好具有光滑之表面,以 射。用於第一層m之介電材料積=及亂真發 石’石英等。體電組材料用於第一層璃’藍寶 玻璃陶質,氧化錫,氧化錄,日者匕括·含鐵之 等。通常’體電組材料之電“二的钕,氧化锆 方歐姆,公分之間。 在i U的五次方到1 0的1 3次 導電層109包括導電材料。悬 金,銅等今屬所4 士、 ♦ 取好,導電層1〇9由如鋁, ⑷寺金原所造成。亦可由合 具體實例中,導電層109包括 金。在本:明之另- 109之導電性質非常必要,以供電層 上所述。 电卞偏轉或聚焦之用,如 含導電層1 09之材料可加以選 如:延性金屬可降低FED 1〇〇裝:=:;他優點。例 導電層U9之材料可有—高工間陰極#壞之危險。 之亂真電子放射。導電層109二,:便控制自導電層I。9 材料而言為非常情性,以防止、之材枓必須對陰極102之 的化學反應。 金屬間形成物質,及不理想 導電層109之高度h加以選挥7 , 轉,以改善複合間隔物m、:二提供電子流132之足夠偏 向適當之磷。意指高度h之選…充電’及導引電子流132 對面之石蟲。由於電子之偏轉可使電子撞擊電子發射器 物108之過度靜電放電,否導電層109可防止複合間隔 ^ ^ i , R3 μ a S產生如電子流132執道之過 度”,隔片可被見到,及電弧等不理 。 在本發明之較佳具體實例 〜 ’導電層109連接至一電C: \ Program Files \ Patent \ 54902. Ptd page 8 463204 V. Description of the invention (5) 107 It is better to have a smooth surface to shoot. The dielectric material product used for the first layer m = and the disordered hair stone'quartz. The material of the body electrical group is used for the first layer of glass sapphire glass ceramics, tin oxide, oxidized metal, Japanese dagger, iron, etc. Generally, the electricity of the bulk material group is between two neodymium, zirconia square ohms, and centimeters. The conductive layer 109 from the fifth power to the third power of 109 includes the conductive material. Hanging gold, copper, etc. are now Therefore, take a good example, the conductive layer 109 is made of aluminum such as Aluminium and Daiji Jinyuan. It can also be composed of the conductive layer 109 in the specific example. In this case, the conductive property of 109 is very necessary. It is described in the power supply layer. For the purpose of deflection or focusing of the electron beam, if the material containing the conductive layer 109 can be selected, for example: ductile metal can reduce the FED 100: = :; other advantages. For example, the material of the conductive layer U9 can There is the danger of the high-work room cathode # being broken. Disturbance of true electron emission. The conductive layer 1092: It is controlled from the conductive layer I. 9 The material is very emotional, in order to prevent Chemical reaction. The formation of intermetallic substances and the height h of the non-ideal conductive layer 109 are selected by 7 and turns to improve the composite spacers m and: 2 to provide enough electron current 132 to be biased to the appropriate phosphorus. It means the selection of height h. ... charging 'and directing the electron current 132 opposite the stone bug. Due to the deflection of the electrons Excessive electrostatic discharge that causes electrons to strike the electron emitter 108, whether the conductive layer 109 can prevent the composite interval ^ ^ i, R3 μ a S from being excessive as the electron flow 132 conducts ", the separator can be seen, and the arc etc. Management. In a preferred embodiment of the present invention, the conductive layer 109 is connected to an electric
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Ά C:\Program Files\Patent\54902. ptd 第 4 63204 五、發明說明(6) 1° ; ^ ^fa1 # ^ ^ ^ ^ ^ ^ ^ f, ^ •位传在第Λ’Λ 。在圖中之具體實例中,放電 兒位係在弟一導電層130上提供。苐二導電層13〇係配 介電層102之上’並包括一導雷材料 # ; 等。 匕括^材抖之蹲層’如鉬,铭 第二導電層130之電位可以單獨控制。最好第二 130連接至地電位。此種連接至地電位,可提供改進:電 子偏轉’而不需要額外電源。但亦可連接至第五電位源$ (未不出),以提供電子偏轉及/或複合間隔物108之電子損 耗特性之理想程度^或者,第二導電層丨3 0亦可連接至或 為FED 100之門抽出電極之一部份,而不需要額外之電位 源。 在圖中之具體實例,電子流1 3 2被括共控制於足以使在 FED 1 0 0之觀者工作期間複合間隔物丨〇8成隱形之地步。特 別需要導電層1 0 9在複合間隔物1 〇 8附進形成電場。為的提 供此場形成功能’導電層1 〇 9須配置於騰空之區域丨06中。 以下’芩考附圖解釋本發明之場發射裝置之範例構型。 須瞭解本發明之場地發射裝置並不限於參考圖中之構形β 此構型在陰極1 0 2於與陽極1 〇 4間之電位差為大於3 0 0 V時 FED 100操作最有用,最好在25 0 0至1〇,〇〇〇伏之間。其亦 包括一VGA構型。須明瞭本發明之場發射顯示並不限於VGA 構型。 在圖中之具體實例,透明基質110及基質116每一均有大 約一毫米之厚度。複合間隔物1 〇 8包括一矩形小板,其長Ά C: \ Program Files \ Patent \ 54902. Ptd No. 4 63204 V. Description of the invention (6) 1 °; ^ fa1 # ^ ^ ^ ^ ^ ^ ^ f, ^ • The bit is transmitted at the Λ’Λ. In the specific example in the figure, the discharge position is provided on the conductive layer 130. The second conductive layer 130 is on top of the dielectric layer 102 'and includes a lightning conductive material #; The squat layer of the material trembling material is molybdenum, and the potential of the second conductive layer 130 can be controlled separately. Preferably, the second 130 is connected to the ground potential. This connection to ground provides an improvement: electron deflection 'without the need for additional power. However, it can also be connected to a fifth potential source $ (not shown) to provide the desired degree of electron deflection and / or the electronic loss characteristics of the composite spacer 108 ^ Alternatively, the second conductive layer 3 can also be connected to or The FED 100 gate extracts part of the electrode without the need for an additional potential source. In the specific example in the figure, the electron flow 132 is controlled so as to make the composite spacer 088 invisible during the work of the observer of FED 100. In particular, a conductive layer 109 is required to be attached to the composite spacer 108 to form an electric field. In order to provide this field-forming function, the conductive layer 109 must be disposed in the vacated area. Exemplary configurations of the field emission device of the present invention are explained below with reference to the accompanying drawings. It should be understood that the field emission device of the present invention is not limited to the configuration β in the reference figure. This configuration is most useful when the potential difference between the cathode 102 and the anode 104 is greater than 300 V, and the operation is best. Between 250,000 and 10,000 volts. It also includes a VGA configuration. It should be understood that the field emission display of the present invention is not limited to the VGA configuration. In the specific example in the figure, the transparent substrate 110 and the substrate 116 each have a thickness of about one millimeter. The composite spacer 108 includes a small rectangular plate having a length
C:\Program FiIes\Patent\54902.ptd 第10頁 463204 五、發明說明(7) 度約為五毫求’局度(在陰極1〇2及陽極1〇4間)約為一毫 米’及約為0 . 07毫米之厚度t。第一及第二門抽出電極 126,128之間之中心至中心距離約為0.3毫米。FED 100可 以操作在陽極導體112與第一及第二門抽出電極126,128 之間約為2500-10,000伏之電位差。以此電壓言,陽極 及陰極間之距離應大於5 〇 〇微米以便降低陽極〗〇 4及陰極 1 0 2間電弧之危險。 在操作FED 1 0 0時’電壓加至第一及第二門抽出電極 126 ’128,陰極導體118及陽極導體〖12以使電子發射器作 選擇之電子發射及導引電子通過騰空區1〇6至磷114 D磷 114即由撞擊電子而發光。 導電層1 0 9在複合間隔物1 〇 8之附近形成電場,故發射至 複合間隔物1 0 8附近之電子不致被導向磷丨丨4及不撞擊複合 間隔物1 0 8。在圖中之範例構形中,在陽極導體丨1 2及第一 及第二門抽出電極126,128之間之電位差,約為2500-10, 0 0 0伏特,導電層109之高度h最好為大約75 — 15〇微米之範 圍。 根據本發明之複合間隔物,可利用極經濟及簡單之方式 製成。本發明之複合間隔物,不需要光刻步驟,昂貴之X f平印’或高方向性姓刻及澱積技術。已不需要電子放射 器塗層之步戰’其會引起電子放射器不完整之危險。 複合間隔物1 0 8可由首先提供電介質或體電阻材料之薄 片製成。此種薄片可以商購。一金屬層可由一或多數傳統 方法’如絲網印刷 '金箔之銅焊、電鍍、無電塗層及聲播C: \ Program FiIes \ Patent \ 54902.ptd Page 10 463204 V. Description of the invention (7) The degree is about five millimeters. Find the 'locality (between the cathode 102 and anode 104) of about one millimeter' and The thickness t is about 0.07 mm. The center-to-center distance between the first and second gate extraction electrodes 126, 128 is about 0.3 mm. The FED 100 can operate at a potential difference between the anode conductor 112 and the first and second gate extraction electrodes 126, 128 of approximately 2500 to 10,000 volts. At this voltage, the distance between the anode and the cathode should be greater than 500 microns in order to reduce the risk of arcing between the anode 04 and the cathode 102. During the operation of FED 100, the voltage is applied to the first and second gate extraction electrodes 126'128, the cathode conductor 118 and the anode conductor 12 to enable the electron emission of the electron emitter to select and guide the electrons through the vacant area 10. 6 to Phosphorus 114 D Phosphorus 114 emits light by hitting electrons. The conductive layer 109 forms an electric field near the composite spacer 108, so the electrons emitted to the vicinity of the composite spacer 108 will not be guided to the phosphorus and will not impact the composite spacer 108. In the example configuration in the figure, the potential difference between the anode conductor 12 and the first and second gate extraction electrodes 126, 128 is about 2500-10,00 volts, and the height h of the conductive layer 109 is the most. It is preferably in the range of about 75 to 150 microns. The composite spacer according to the present invention can be produced in an extremely economical and simple manner. The composite spacer of the present invention does not require a photolithography step, expensive X f lithography 'or high-directional lithography and deposition techniques. There is no longer a need for the coating of electron emitters, which will cause the danger of incomplete electron emitters. The composite spacer 108 may be made of a thin sheet that is first provided with a dielectric or bulk resistive material. Such flakes are commercially available. A metal layer can be made by one or more conventional methods such as screen printing, brazing of gold foil, electroplating, electroless coating and sound broadcasting.
C:\Prograin Fi les\Patent\54902. ptd 第11頁 4 63204 五、發明說明(8) Ϊ = 片上形成^金屬層連接在 例如由線錯或切割鋸為之1好於;===隔物’ 電阻材料之表面開始,以便::將;刀割:二在//質或體 電材料塗層。 无避免將弟一層107之表面以導 土為建造本具體實例由陶金屬材料製成之導電層1〇9,首 ^ :金屬複合材料由在一金屬粉末中發散—絕緣陶質階 ^又所I成。混合物經由標準陶形成方法,# ' 麼縮、滑動•造等形成薄片。自形成作業中,一u 被疊層為選擇之電介質或體電阻材料: 在接合介面上於溫度小於攝氏· 元成,以防止金屬組件之氧化。改變金 …、處理下 機械及熱性質可以配合以達到理想特性以:層 1⑽之最佳熱膨脹係數。本具體實例在需 二= 大機械應力’而非順應性時,非常有用。 日09之較 陽極1 04及陰極i 02形成之方法對精於此技蔽者 知。4陽極H4及陰極102製成之後,複合“⑷已由,、 熱壓ifg接合法接合至第二導電層HQ,以掩# 垂直構型。在複合間隔物1〇8及封裝密=:陰極1。2成 後,陽極m於是予以置放。衣在封於真空環境中 總之,本發明係供具有複合間隔物之場發 明之場發射裝置可在陽極至陰極之電位差高於本發 下操作’最好約在测-10,咖伏特之間。本發明之=C: \ Prograin Files \ Patent \ 54902. Ptd Page 11 4 63204 V. Description of the invention (8) Ϊ = Forming on the sheet ^ The metal layer is connected better by, for example, a wire fault or a cutting saw; === The surface of the resistive material is started in order to :: cut; knife cut: two in the coating of // quality or bulk electrical material. It is inevitable that the surface of the first layer 107 is constructed with conductive earth. The specific example is a conductive layer made of ceramic metal material. I into. The mixture is formed into thin slices by standard pottery forming methods. In the self-forming operation, a u is laminated as the selected dielectric or bulk resistive material: at the junction interface, the temperature is lower than Celsius · Yuan to prevent oxidation of metal components. After changing the gold, the mechanical and thermal properties can be matched to achieve the desired characteristics: the best thermal expansion coefficient of layer 1⑽. This specific example is very useful when two = large mechanical stress' is required instead of compliance. Comparison of the formation of the anode 1 04 and the cathode 02 in the day 09 is known to those skilled in the art. 4 After the anode H4 and the cathode 102 are made, the composite "⑷ has been bonded to the second conductive layer HQ by a hot-press ifg bonding method to mask the # vertical configuration. In the composite spacer 108 and the package density =: cathode After 1.2%, the anode m is then placed. The garment is sealed in a vacuum environment. In short, the invention is a field emission device for a field invention with a composite spacer, which can operate at a potential difference between the anode and the cathode higher than the current 'Preferably between about -10 and cav. The invention =
d632〇- 五、發明說明(9) 射裝置有一"隱形間隔物",顯示器之觀察者無法看到。本 發明之複合間隔物可利用簡單及經濟之方法製成。 本發明之特別具體實例,已如上所顯示及敘述,對於精 於此技藝者,進一步之修正及改進,當屬可行。吾人期望 本發明並不限於所示之特殊形式,並期望所附之申請專利 範圍所有之修正,而不致有悖本發明之精神及範圍。d632〇- 5. Description of the invention (9) The radiation device has a "invisible spacer" which cannot be seen by the viewer of the display. The composite spacer of the present invention can be made by a simple and economical method. The specific embodiment of the present invention has been shown and described as above. For those skilled in the art, further modifications and improvements are feasible. I hope that the present invention is not limited to the particular form shown, and that all the amendments to the scope of the attached patent application are not to be construed without departing from the spirit and scope of the invention.
C:\Program Files\Patent\54902. ptd 苐13頁C: \ Program Files \ Patent \ 54902. Ptd 苐 page 13
Claims (1)
Applications Claiming Priority (1)
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US99190497A | 1997-12-17 | 1997-12-17 |
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TW463204B true TW463204B (en) | 2001-11-11 |
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ID=25537705
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TW087116290A TW463204B (en) | 1997-12-17 | 1998-09-30 | Field emission device having a composite spacer |
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Country | Link |
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EP (1) | EP1048045A1 (en) |
JP (1) | JP2002509337A (en) |
KR (1) | KR20010031780A (en) |
CN (1) | CN1282448A (en) |
TW (1) | TW463204B (en) |
WO (1) | WO1999031699A1 (en) |
Cited By (1)
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TWI451465B (en) * | 2011-08-22 | 2014-09-01 | Au Optronics Corp | Field emission display device |
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JP4115050B2 (en) * | 1998-10-07 | 2008-07-09 | キヤノン株式会社 | Electron beam apparatus and spacer manufacturing method |
JP2004119296A (en) * | 2002-09-27 | 2004-04-15 | Toshiba Corp | Image display device, manufacturing method of spacer used for image display device and image display device equipped with spacer manufactured by this method |
US20050156507A1 (en) | 2002-09-27 | 2005-07-21 | Shigeo Takenaka | Image display device, method of manufacturing a spacer for use in the image display device, and image display device having spacers manufactured by the method |
KR100513599B1 (en) * | 2002-12-10 | 2005-09-09 | 한국전자통신연구원 | Electrostatic discharge protection structure and method for manufacturing the same |
JP2004311247A (en) | 2003-04-08 | 2004-11-04 | Toshiba Corp | Image display device and manufacturing method of spacer assembly used for image display device |
US7138758B2 (en) * | 2003-05-15 | 2006-11-21 | Canon Kabushiki Kaisha | Image forming apparatus having a high-resistance coated spacer in electrical contact with wirings components at predetermined intervals |
CN100499015C (en) * | 2004-11-18 | 2009-06-10 | 佳能株式会社 | Image forming apparatus |
KR101173859B1 (en) | 2006-01-31 | 2012-08-14 | 삼성에스디아이 주식회사 | Spacer and electron emission display device having the same |
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US5811927A (en) * | 1996-06-21 | 1998-09-22 | Motorola, Inc. | Method for affixing spacers within a flat panel display |
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1998
- 1998-09-04 CN CN98812198A patent/CN1282448A/en active Pending
- 1998-09-04 EP EP98944785A patent/EP1048045A1/en not_active Withdrawn
- 1998-09-04 JP JP2000539505A patent/JP2002509337A/en active Pending
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TWI451465B (en) * | 2011-08-22 | 2014-09-01 | Au Optronics Corp | Field emission display device |
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CN1282448A (en) | 2001-01-31 |
KR20010031780A (en) | 2001-04-16 |
WO1999031699A1 (en) | 1999-06-24 |
JP2002509337A (en) | 2002-03-26 |
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