JP2009272114A - Electron source manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electron source manufacturing device which ensures uniformization of the temperature distribution of a substrate for manufacturing an electron source and manufacturing of the electron source which is superior in electron-emission characteristics. <P>SOLUTION: The electron source manufacturing device includes a support for supporting a substrate on which an electron-emitting element is formed and activates the electron-emitting element, by applying a voltage to the electron-emitting element, wherein the support includes a duct for allowing the liquid for collecting heat generated from the substrate to flow; a groove placed on a surface on which the substrate is formed, the duct and the groove are placed so as to cross each other on a surface parallel to the surface of the substrate, and a part between the groove and the substrate is filled with a gas for transmitting the heat generated from the substrate to the support. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an electron source manufacturing apparatus.

  As an electron source, an electron source including a plurality of electron-emitting devices is known. As an electron-emitting device, a surface conduction electron-emitting device utilizes a phenomenon in which electron emission occurs when a current flows in parallel to a film surface through a small-area thin film formed on a substrate.

  The basic configuration, manufacturing method, and the like are disclosed in Patent Documents 1 and 2, for example.

An electron source including a plurality of such electron-emitting devices is produced, for example, by the following procedure.
(1) A plurality of elements each including a conductive film and a pair of element electrodes connected to the conductive film are arranged on the substrate.
(2) Connect wiring to the plurality of elements.
(3) A voltage is applied to each element. For example, a crack is formed by applying a voltage to each element in a reduced pressure state, and each element is an electron-emitting element.
(4) The electron-emitting device is activated by applying a voltage to each electron-emitting device in an organic substance gas atmosphere.

  In the manufacturing method, the substrate generates heat when a voltage is applied. Since such heat generation is non-uniform on the substrate, the temperature distribution on the substrate surface is non-uniform. As a result, the performance of the electron-emitting device (for example, the performance of emitting electrons) varies.

  A conventional technique in view of such a problem is disclosed in Patent Document 3, for example. Patent Document 3 discloses an electron source manufacturing apparatus that makes the temperature distribution of a substrate uniform by varying the amount of heat recovered from the substrate (the amount of recovered heat) according to the position of the substrate.

  FIG. 2 is a diagram illustrating an embodiment of an electron source manufacturing apparatus disclosed in Patent Document 3. In FIG. In FIG. 2, helium gas 203 is filled between the substrate 10 and the support 11. Further, considering the heat generation distribution of the substrate, the pressure of the helium gas at the position corresponding to the four inner water pipes (flow paths) 20 is 5 hPa, and the position corresponding to each of the two flow paths 20 on the outer side. The pressure of helium gas is 30 hPa. The intervals between the flow paths 20 in the support 11 are equal intervals. By employing the support body based on the above configuration, it is possible to suppress non-uniform temperature distribution of the substrate (temperature distribution due to non-uniform heat generation generated by applying a voltage to each element).

JP 7-235255 A JP-A-8-171849 JP 2004-152601 A

  However, in the conventional invention, the amount of recovered heat can be adjusted in a range corresponding to the flow path, that is, only in one direction with respect to the surface of the substrate. For this reason, it was possible to suppress a relatively small heat generation distribution or a heat generation distribution generated linearly in one direction, but a large heat generation distribution generated in a plane shape, for example, a heat generation distribution generated in a radial direction from the center of the substrate. Etc. could not be suppressed.

  The present invention has been made in view of the above circumstances, and the object of the present invention is to produce an electron source having excellent electron emission characteristics by making the temperature distribution of the substrate used for producing the electron source uniform. An object of the present invention is to provide a device for manufacturing an electron source.

The electron source manufacturing apparatus of the present invention is
An electron source manufacturing apparatus having a support for supporting a substrate on which an electron-emitting device is formed, and activating the electron-emitting device by applying a voltage to the electron-emitting device,
The support is
A flow path for flowing a liquid for collecting heat generated by the substrate;
A groove provided on the surface on which the substrate is provided;
Have
The flow path and the groove are provided so as to intersect each other in a plane parallel to the surface of the substrate,
A gas for transmitting heat generated by the substrate to the support is filled between the groove and the substrate.

  ADVANTAGE OF THE INVENTION According to this invention, the temperature distribution of the board | substrate used for manufacture of an electron source can be made uniform, and the electron source manufacturing apparatus which can manufacture the electron source excellent in the electron emission characteristic can be provided.

<Configuration of electron source manufacturing apparatus>
First, an example of the configuration of an electron source manufacturing apparatus according to an embodiment of the present invention will be described in detail with reference to the drawings. 3 and 4 are diagrams showing an example of the configuration of the electron source manufacturing apparatus according to the present embodiment. FIG. 3 is a sectional view of the electron source manufacturing apparatus according to this embodiment. FIG. 4 is a perspective view showing in detail the peripheral portion of the substrate 10 of FIG. 3, with a part thereof cut away.

  In these drawings, 6 is a conductor to be an electron-emitting device, 7 is an X-direction wiring, 8 is a Y-direction wiring, 10 is a substrate, 11 is a support, 12 is a lid member, 15 is a gas inlet, 16 is An exhaust port 18 is a seal member. Further, 19 is a diffusion plate, 20 is a flow path, 21 is an organic substance gas, 22 is a carrier gas, 23 is a moisture removal filter, 24 is a gas flow control device, 25a to 25f are valves, 26 is a vacuum pump, and 27 is vacuum. A total of 28 is piping. Reference numeral 30 denotes an extraction wiring, 32a and 32b drive drivers composed of a power source and a current control system, 31a and 31b wiring for connecting the board extraction wiring 30 and the drive driver, 33 an opening of the diffusion plate 19, and 41 The groove part 70 is a probe unit.

  The support 11 is a member for fixing (supporting) the substrate 10. The support 11 has a fixing part such as a vacuum chucking mechanism, an electrostatic chucking mechanism, or a fixing jig, and mechanically fixes the substrate 10 by the fixing part. The support 11 has a flow path 20 for flowing a liquid (for example, water) for collecting the heat generated by the substrate 10. By flowing water through the flow path 20, the temperature distribution of the substrate 10 is controlled. The support 11 has a groove 41 on the surface on which the substrate 10 is provided. The groove 41 is formed according to the heat distribution on the substrate surface.

In the present embodiment, the flow path 20 and the groove portion 41 are provided so as to intersect each other in a plane parallel to the plane of the substrate. Then, a gas (for example, helium gas) for transmitting heat generated by the substrate 10 to the support 11 is filled between the groove 41 and the substrate 10. Thereby, the amount of recovered heat can be partially varied. Specifically, the substrate 1 is activated during activation of the electron-emitting device (voltage application).
The temperature distribution on the surface of the substrate 10 can be made uniform with respect to non-uniform heat generation occurring on zero. As a gas filling method, for example, as shown in FIG. 8, a hole penetrating vertically may be provided at a position where the groove portion 41 of the support 11 is provided. A pipe having a vacuum gauge 80, a valve 81, a vacuum pump 82, a flow rate control valve 83, and a gas container (a container filled with gas) 84 is connected to the hole provided in the support 11. Specifically, as shown in FIG. 8, a vacuum gauge 80 and a valve 81 are located in a pipe between the support 11 and the vacuum pump 82, and the vacuum gauge 80 and the gas container 84 are placed between the support 11 and the gas container 84. A pipe in which the flow rate control valve 83 is located is connected. Then, the valve 81 is opened with the flow rate control valve 83 closed, and the vacuum pump 82 reduces the pressure between the groove 41 and the substrate 10. Thereafter, the valve 81 is closed, and the gas is filled while the flow rate of the gas flowing in from the gas container 84 is controlled by the flow rate control valve 83 so that the value of the vacuum gauge 80 becomes a desired value.

The lid member 12 is a glass or stainless steel lid. The material of the lid member 12 is not limited to these, and any material that releases a small amount of gas (leakage) may be used. The lid member 12 covers the substrate 10 so as to cover a region where the conductor 6 is formed (excluding a part (for example, an end portion) of the extraction wiring 30 of the substrate 10). The lid member 12 is configured to withstand at least a pressure range of 1.33 × 10 ⁻¹ Pa (1 × 10 ⁻³ Torr) to atmospheric pressure.

  The seal member 18 is for maintaining the airtightness of the contact portion between the substrate 10 and the lid member 12. As the seal member 18, for example, an O-ring, a rubber sheet, or the like is used.

  The organic substance gas 21 (organic substance gas) is used to activate an electron-emitting device described later. When the electron-emitting device is activated, an organic substance gas 21 or a mixed gas obtained by diluting the organic substance gas 21 with a carrier gas 22 (inert gas such as nitrogen or helium or argon) is covered with the lid member 12. Into the space (hereinafter referred to as “inside the lid member 12”). Moreover, when performing the energization process for forming (crack formation) mentioned later, the gas for promoting the crack formation of the conductor 6, for example, hydrogen gas etc. which have reducibility, may be introduced. These gases are introduced into the lid member 12 through the pipe 28 and the valve 25e.

Organic substances used for activating the electron-emitting device include organic acids such as aliphatic hydrocarbons, aromatic hydrocarbons, alcohols, aldehydes, ketones, amines, nitriles, phenol, carvone, and sulfonic acid. Etc. are appropriately selected. Aliphatic hydrocarbons include alkanes, alkenes, alkynes and the like. More specifically, the organic material may be selected from saturated hydrocarbons represented by C _n H _{2n + 2} , such as methane, ethane, and propane. The ethylene may be selected from unsaturated hydrocarbon expressed by a composition formula such as C _n H _2n such as ethylene and propylene. You may select from benzene, toluene, methanol, ethanol, acetaldehyde, acetone, methyl ethyl ketone, methylamine, ethylamine, phenol, benzonitrile, acetonitrile and the like.

  The organic substance gas 21 may be used as it is when the organic substance is a gas at normal temperature, and may be used after evaporation or sublimation in a container when the organic substance is liquid or solid at normal temperature.

  The flow rate of the organic substance gas 21 and the carrier gas 22 and the mixing ratio when mixing these gases are controlled by the gas flow rate control device 24. The gas flow rate control device 24 includes a mass flow controller and a solenoid valve. A gas used for activating the electron-emitting device (hereinafter referred to as a mixed gas in this embodiment) was heated to an appropriate temperature by a heater (not shown) provided around the pipe 28 as necessary. Then, it is introduced into the lid member 12 from the introduction port 15. The heating temperature of the mixed gas is preferably equal to the temperature of the substrate 10.

  It is preferable to provide a moisture removal filter 23 in the middle of the pipe 28 to remove moisture in the organic substance gas 21 and the carrier gas 22. In the example of FIG. 3, the moisture removal filter 23 is provided in each of the piping that communicates with the organic substance gas 21 and the piping that communicates with the carrier gas 22. However, the piping after the piping is connected (the piping through which the mixed gas flows). ) May be provided with a moisture removal filter 23. As the moisture removal filter 23, for example, a hygroscopic material such as silica gel, molecular sieve, magnesium hydroxide may be used.

  The mixed gas introduced into the lid member 12 is exhausted at a constant exhaust speed by the vacuum pump 26 through the exhaust port 16. Thereby, the pressure of the mixed gas in the lid member 12 is kept constant. The vacuum pump 26 used in the present embodiment is a low vacuum pump such as a dry pump, a diaphragm pump, or a scroll pump, and an oil-free pump is preferably used.

  Although depending on the type of organic substance used for activation, the pressure of the mixed gas (pressure in the lid member 12) is the size of the space in which the mean free path λ of gas molecules constituting the mixed gas is covered with the lid member 12. It is preferable that the pressure is not less than a pressure that is sufficiently small. The size of the space covered with the lid member 12 is, for example, the longest diameter, the shortest diameter, or the diameter of a spherical approximation of the covered space. That is, the degree of vacuum in the viscous flow region (a pressure from several hundred Pa (several Torr) to atmospheric pressure) is preferable. Thereby, shortening of the time of an activation process and improvement of uniformity are expected.

  Further, it is preferable to provide a diffusion plate 19 between the inlet 15 of the lid member 12 and the substrate 10. Thereby, the flow of the mixed gas is controlled, and the organic material is uniformly supplied to the entire surface of the substrate. For this reason, the uniformity of the electron-emitting device is improved.

  The take-out wiring 30 of the substrate 10 is drawn to the outside of the lid member 12, is connected to the wirings 31a and 31b using the probe unit 70, and is connected to the drive drivers 32a and 32b.

  In the present embodiment, the temperature distribution on the surface of the substrate 10 can be made uniform by the configuration of the support 11 described above. Thereby, an electron source having excellent electron emission characteristics can be manufactured. Specifically, the reproducibility of the electron emission characteristics of the electron source, particularly the uniformity of the electron emission characteristics in an electron source having a plurality of electron emission portions can be improved.

  Further, in this embodiment, the lid member 12 only needs to cover the conductor 6 on the substrate 10, so that the apparatus can be downsized. Therefore, the introduction of the gas into the lid member 12 and the discharge of the gas outside the lid member 12 can be performed in a short time. Further, since the wiring of the substrate 10 is drawn out of the lid member 12, electrical connection between the substrate 10 and a power supply device (drive driver) for performing electrical processing can be easily performed. Thereby, the manufacturing speed is improved.

<Method for manufacturing electron source>
Next, a specific example of an electron source manufacturing method using the electron source manufacturing apparatus according to the present embodiment will be described.

  First, the substrate 10 on which the conductor 6 and the wiring connected to the conductor 6 are formed in advance is placed on the support 11. Then, the region on the substrate 10 where the conductor 6 is formed (excluding a part (for example, an end portion) of the extraction wiring 30 of the substrate 10) is covered with the lid member 12. As a result, the conductor 6 formed on the substrate is arranged in an airtight space in a state where a part of the extraction wiring 30 formed on the substrate 10 is exposed outside the lid member 12.

  Next, the inside of the lid member 12 is made to have a desired atmosphere, and electrical processing is performed on the conductor 6 through the wirings 31 a and 31 b and the extraction wiring 30 by the drive drivers 32 a and 32 b, for example, voltage is applied to the conductor 6. Do. Thereby, a crack (electron emission part) is formed in the conductor 6 (forming; crack formation). That is, an electron-emitting device is formed. The desired atmosphere is, for example, a decompressed atmosphere or an atmosphere in which a specific gas such as a carbon compound exists.

  Then, a mixed gas containing an organic substance is allowed to flow into the lid member 12 and the inside of the lid member 12 is in a mixed gas atmosphere. The drive drivers 32 a and b drive the electron-emitting devices through the wirings 31 a and 31 b and the extraction wiring 30. A pulse voltage is applied to. Thereby, the electron-emitting device is activated.

  Note that the electrical treatment for forming may be performed a plurality of times in different atmospheres. For example, electrical processing is performed with the inside of the lid member 12 as a first atmosphere, and then electrical processing is performed with the inside of the lid member 12 as a second atmosphere. Thereby, a good electron emission portion (crack) is formed in the conductor 6. Here, the first atmosphere is a decompressed atmosphere, and the second atmosphere is an atmosphere in which a specific gas such as a carbon compound exists.

  An electron source is manufactured through the above steps.

<Configuration of image display apparatus having electron source>
The electron source according to the present embodiment can be combined with an image forming member to form an image display device as shown in FIG. Below, an example of a structure of the image display apparatus which has an electron source concerning this embodiment is demonstrated. FIG. 5 is a perspective view showing an example of the configuration of the image display device 68 according to the present embodiment, and a part thereof is cut away. In the present embodiment, an example in which the electron-emitting devices are arranged in a simple matrix will be described. That is, a plurality of electron-emitting devices are arranged in a matrix in the X direction and the Y direction. Then, one of the electrodes of the plurality of electron-emitting devices arranged in the same row is commonly connected to the X-direction wiring, and the other electrode of the plurality of electron-emitting devices arranged in the same column is connected to the Y-direction wiring. Connect in common.

  In FIG. 5, 6 ′ is an electron-emitting device, 10 is a substrate (electron source substrate), 62 is a support frame, and 66 is a face plate including a glass substrate 63, a phosphor 64, and a metal back 65.

  A scanning signal is applied to each electron-emitting device in the image forming apparatus of FIG. 5 through a container external terminal Dx1 to Dxm by a scanning signal generating unit (not shown). In addition, a modulation signal is applied to each electron-emitting device through a container external terminal Dy1 to Dyn by a modulation signal generation unit (not shown). By applying a scanning signal and a modulation signal to the electron-emitting device, electrons are emitted from the electron-emitting device.

  A high voltage (for example, 5 kV) is applied to the metal back 65 or the transparent electrode (not shown) through the high voltage terminal 67. Thereby, the electrons emitted from the electron-emitting device are accelerated. Then, when the accelerated electrons collide with the phosphor 64, the phosphor is excited (emits light). As a result, an image is displayed.

Note that the scanning signal wiring and the modulation signal wiring (wiring for applying the signal to the electron-emitting device; wiring in the X direction or wiring in the Y direction) are used as external terminals (X direction or Y direction) as shown in FIG. It is not necessary to expose only one side (in the direction). The scanning signal wiring and modulation signal wiring are only on one side as long as the number of elements is not affected by the applied voltage drop between the electron-emitting device near the outer terminal connected to the signal wiring and the electron-emitting device far from the container. It may be exposed. However, when the number of elements is large, there is a possibility that an influence of a voltage drop occurs. In such a case, the scanning signal wiring and the modulation signal wiring may be exposed on both sides as the container external terminals. Note that the influence of the voltage drop can also be reduced by increasing the width of the signal wiring or increasing the thickness of the signal wiring.

<Example>
Examples of the electron source manufacturing apparatus according to this embodiment will be described in detail below. Specifically, the configuration of the support 11 will be described in detail.

  As described above, the support 11 has a uniform temperature distribution on the surface of the substrate 10 against uneven heat generated on the substrate 10 by applying a voltage to the electron-emitting device, such as during activation of the electron-emitting device. It has the structure for solving the problem of making it. Thereby, the dispersion | variation in the performance of each electron emission element can be made uniform. Specifically, the support 11 has a configuration capable of partially varying the amount of recovered heat corresponding to the heat generation distribution on the surface of the substrate 10.

  Hereinafter, the configuration will be described in detail with reference to Examples 1 and 2. In addition, the structure of the support body 11 is not limited to the structure described in Example 1, 2, and the thing by which each element was substituted and the design change was made within the range by which the said subject is solved.

<Example 1>
FIG. 1 is a perspective view illustrating the configuration of the support 111 of the electron source manufacturing apparatus according to the first embodiment. The substrate 10 is placed on the support 111. The heat generation distribution of heat generated on the surface of the substrate 10 by the activation process is a radial heat generation distribution that increases from the inner side (center) to the outer side (corner portion) on the surface of the substrate 10. For example, the center is about 2 W / cm ² and the corners are about 4 W / cm ² .

  The support 111 shown in FIG. 1 has a plurality of linear channels 120. The plurality of flow paths 120 are provided along one direction on a plane parallel to the plane of the substrate 10. The plurality of channels 120 are arranged at equal intervals in the surface direction of the substrate 10. The support 111 is provided with linear grooves 101 to 103 on the surface on which the substrate 10 is provided. The grooves 101 to 103 are provided so as to be orthogonal to the plurality of flow paths 120 in a plane parallel to the plane of the substrate 10. Moreover, the groove parts 101-103 are provided in order of the groove parts 101-103 toward the outer side (both sides) from the inner side.

  FIG. 6 is a perspective view showing a state where the substrate 10 (glass substrate) is installed on the support 111. The grooves 101 to 103 are located immediately below the substrate 10.

  Between the groove portions 101 to 103 and the substrate 10 (closed space formed by the groove portions 101 to 103 and the substrate 10), in order to adjust the recovered heat amount of each region (region where the groove portion is provided) (substrate In order to transmit 10 heat generations to the support 111), helium gas is filled. Further, the pressure of the helium gas to be filled for each groove is different. Specifically, the pressure of the helium gas filled in the groove provided in the central portion (side closer to the center) of the substrate 10 on the surface parallel to the surface of the substrate 10 is outside the central portion of the substrate 10 (from the center). The pressure is lower than the pressure of the helium gas filling the groove provided on the far side.

  In this embodiment, the groove 101 is filled with 2500 Pa, the groove 102 is filled with 4000 Pa, and the groove 103 is filled with 6000 Pa. As a result, the thermal conductivity of the central portion of the substrate 10 that generates little heat is deteriorated by reducing the pressure of the helium gas. By increasing the pressure of the helium gas on the outside of the central portion of the substrate 10 that generates a large amount of heat, the heat conduction characteristics are improved.

In this way, the amount of recovered heat can be adjusted with respect to non-uniform heat generation by varying the pressure of the helium gas filled for each groove. Further, in the present embodiment, the groove portions 101 to 103 each intersect the plurality of flow paths 120 in a plane parallel to the surface of the substrate 10 (the plurality of flow paths 120 are respectively parallel to the surface of the substrate 10. And intersect with the grooves 101 to 103). Thereby, in the area | region in which one flow path or a groove part is provided, the collect | recovered heat amount can be made partially different. That is, it is possible to perform partially different temperature adjustments. In this example, the temperature distribution on the substrate surface could be made favorable (uniform) by adopting such a configuration. Therefore, an electron source with uniform electron emission characteristics of the electron-emitting device could be produced.

<Example 2>
FIG. 7 is a perspective view illustrating the configuration of the support 311 of the electron source manufacturing apparatus according to the second embodiment. The substrate 10 is set on the support 311. The heat generation distribution of heat generated on the surface of the substrate 10 by the activation process is a radial heat generation distribution that increases from the inner side (center) to the outer side (corner portion) on the surface of the substrate 10. For example, the center is about 2 W / cm ² and the corners are about 4 W / cm ² .

  The support 311 shown in FIG. 7 has a plurality of linear flow paths 320. The plurality of flow paths 320 are provided along one direction on a plane parallel to the plane of the substrate 10. The plurality of flow paths 320 are arranged at equal intervals in the surface direction of the substrate 10. The support 311 is provided with grooves 301 to 303 on the surface on which the substrate 10 is provided. The groove 301 is a circular groove provided in a plane parallel to the surface of the substrate 10 so that the center thereof substantially coincides with the center of the substrate 10. The groove part 302 and the groove part 303 are annular grooves provided so that their centers substantially coincide with the center of the substrate 10 in a plane parallel to the surface of the substrate 10. The groove 302 is provided outside the groove 301, and the groove 303 is provided outside the groove 302. In addition, the grooves 301 to 303 are provided so as to intersect the plurality of flow paths 320 on a plane parallel to the plane of the substrate 10.

  FIG. 6 is a perspective view showing a state where the substrate 10 (glass substrate) is installed on the support 311. The groove portions 301 to 303 are located immediately below the substrate 10.

  Between the grooves 301 to 303 and the substrate 10 (closed space formed by the grooves 301 to 303 and the substrate 10), in order to adjust the recovered heat amount of each region (region where the groove is provided) (substrate In order to transmit 10 heat generations to the support 311), helium gas is filled. Further, the pressure of the helium gas to be filled for each groove is different. Specifically, the pressure of the helium gas filled in the groove provided in the central portion (side closer to the center) of the substrate 10 on the surface parallel to the surface of the substrate 10 is outside the central portion of the substrate 10 (from the center). The pressure is lower than the pressure of the helium gas filling the groove provided on the far side.

  In this embodiment, the groove 301 is filled with 2500 Pa, the groove 302 with 4000 Pa, and the groove 303 with 6000 Pa. As a result, the thermal conductivity of the central portion of the substrate 10 that generates little heat is deteriorated by reducing the pressure of the helium gas. By increasing the pressure of the helium gas on the outside of the central portion of the substrate 10 that generates a large amount of heat, the heat conduction characteristics are improved.

In this way, the amount of recovered heat can be adjusted with respect to non-uniform heat generation by varying the pressure of the helium gas filled for each groove. Further, in the present embodiment, the groove portions 301 to 303 each intersect with the plurality of flow paths 320 in a plane parallel to the surface of the substrate 10 (the plurality of flow paths 320 are respectively parallel to the surface of the substrate 10. And intersect with the grooves 301 to 303). Thereby, in the area | region in which one flow path or a groove part is provided, the collect | recovered heat amount can be made partially different. That is, it is possible to perform partially different temperature adjustments. In this example, the temperature distribution on the substrate surface could be made favorable (uniform) by adopting such a configuration. Therefore, an electron source with uniform electron emission characteristics of the electron-emitting device could be produced.

  As described above, in the present embodiment, it is possible to partially vary the amount of recovered heat by providing the support with a flow path (cooling pipe) and a groove portion intersecting therewith. Therefore, even if non-uniform heat generation occurs on the substrate surface, the temperature distribution on the substrate surface can be kept uniform. Thereby, the performance variation of the electron-emitting devices can be made uniform, and an electron source having excellent electron emission characteristics can be manufactured.

  In the above embodiment, the case where the support has a plurality of flow paths and a plurality of grooves has been described. However, the support may have a structure having one flow path and one groove, or either one of them. The structure which has two or more may be sufficient. When the support has one channel and one groove, the channel and the groove may cross each other on a plane parallel to the substrate. In the case where the support has one flow path and a plurality of groove portions, the flow path may cross the plurality of groove portions in a plane parallel to the substrate. In the case where the support has one groove and a plurality of flow paths, it is only necessary that the groove intersects with the plurality of flow paths in a plane parallel to the substrate. As a result, the amount of recovered heat can be partially varied.

  In this embodiment, the amount of recovered heat is adjusted by changing the filling pressure for each groove, but the amount of recovered heat may be different for each flow path. For example, on a plane parallel to the surface of the substrate 10, the amount of recovered heat in the channel provided near the center of the substrate is smaller than the amount of recovered heat in the channel provided at a position away from the center of the substrate. do it. Specifically, high temperature water may be supplied to a flow path provided near the center of the substrate, and low temperature water may be supplied to a flow path provided at a position away from the center of the substrate. Thereby, a uniform temperature distribution can be obtained. Further, the flow rate of water flowing through the flow path provided near the center of the substrate may be less than the flow rate of water flowing through the flow path provided at a position away from the center of the substrate. The diameter of the flow path provided near the center of the substrate (the distance from the surface on which the substrate is provided to the flow path) is made smaller than the diameter of the flow path provided at a position away from the center of the substrate. May be. Further, the material of the support may be different for each flow path. For example, as the material of the support near the center of the substrate, a material having a larger heat capacity or a material having a lower thermal conductivity than the material of the support far from the center of the substrate may be used. This also makes it possible to vary the amount of recovered heat for each flow path.

  The liquid flowing through the flow path 20 may not be water. Any liquid may be used as long as the temperature of the substrate can be adjusted. The gas filled between the groove and the substrate is not limited to helium gas. Any gas may be used as long as the temperature of the substrate can be adjusted.

FIG. 1 is a perspective view illustrating the configuration of the support of the electron source manufacturing apparatus according to the first embodiment. FIG. 2 is a diagram showing a conventional example of an electron source manufacturing apparatus. FIG. 3 is a cross-sectional view of the electron source manufacturing apparatus according to this embodiment. FIG. 4 is a perspective view showing in detail the peripheral portion of the substrate of FIG. FIG. 5 is a perspective view showing an example of the configuration of the image display apparatus according to the present embodiment. FIG. 6 is a perspective view showing a state in which the substrate is installed on the support. FIG. 7 is a perspective view illustrating the configuration of the support of the electron source manufacturing apparatus according to the second embodiment. FIG. 8 is a diagram illustrating an example of a gas filling method between the groove and the support in the present embodiment.

Explanation of symbols

6 Conductor 6 'Electron Emitting Element 7 X Direction Wiring 8 Y Direction Wiring 10 Substrate 11, 111, 311 Support 12 Cover Member 15 Inlet 16 Exhaust Port 18 Seal Member 19 Diffusion Plate 20, 120, 320 Channel 21 Organic Substance Gas 22 Carrier gas 23 Moisture removal filter 24 Gas flow control device 25a to 25f Valve 26 Vacuum pump 27 Vacuum gauge 28 Piping 30 Extraction wiring 31a, 32b Wiring 32a, 32b Drive driver 33 Opening 41, 101-103, 301-303 Groove 62 support frame 63 glass substrate 64 phosphor 65 metal back 66 face plate 67 high voltage terminal 68 image display device 70 probe unit 80 vacuum gauge 81 valve 82 vacuum pump 83 flow control valve 84 gas container 203 helium gas

Claims (9)

An electron source manufacturing apparatus having a support for supporting a substrate on which an electron-emitting device is formed, and activating the electron-emitting device by applying a voltage to the electron-emitting device,
The support is
A flow path for flowing a liquid for collecting heat generated by the substrate;
A groove provided on the surface on which the substrate is provided;
Have
The flow path and the groove are provided so as to intersect each other in a plane parallel to the surface of the substrate,
An electron source manufacturing apparatus, wherein a gas for transmitting heat generated by the substrate to the support is filled between the groove and the substrate. 2. The electron source manufacturing apparatus according to claim 1, wherein the flow path is provided along one direction on a plane parallel to the surface of the substrate. 3. The electron source manufacturing apparatus according to claim 1, wherein the flow path and the groove are provided so as to be orthogonal to each other on a plane parallel to the surface of the substrate. The support has a plurality of the groove portions,
4. The electron source manufacturing apparatus according to claim 1, wherein the flow path intersects the plurality of groove portions in a plane parallel to the surface of the substrate. The electron source manufacturing apparatus according to claim 4, wherein the pressure of the gas to be filled is different for each groove portion. In a plane parallel to the surface of the substrate, the pressure of the helium gas filling the groove provided in the central portion of the substrate is higher than the pressure of the helium gas filling the groove provided outside the central portion of the substrate. 6. The electron source manufacturing apparatus according to claim 5, wherein the apparatus is low. The support has a plurality of the flow paths,
The electron source manufacturing apparatus according to claim 1, wherein the groove portion intersects the plurality of flow paths in a plane parallel to the surface of the substrate. The electron source manufacturing apparatus according to claim 7, wherein the heat recovery amount is different for each flow path. In a plane parallel to the surface of the substrate, the amount of heat recovered in the flow path provided in the center of the substrate is smaller than the amount of heat recovered in the flow path provided outside the center of the substrate. The electron source manufacturing apparatus according to claim 8.

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