JP2003086102A - Device and method for manufacturing electron source - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize manufacturing an electron source with an excellent electron emission characteristics capable of miniaturizing, simplifying the operability and enhancing the manufacturing speed and appropriate for mass production that can readily comprise a heating means or a cooling means to a support for supporting a large substrate. SOLUTION: For the electron source substrate 10 with wiring, insulators and electron emitting elements formed on it, a vacuum chamber 12 for covering a part of the electron source substrate 10 and the support 207 for mounting the electron emitting base 10 are arranged and a flat plate 210 having a difference of a coefficient of linear expansion with the support 207 no more than the predetermined value is laminated on the face of the support 207 opposite to the electron source substrate 10, a heater 212 and a coolant flow path 213 are arranged on the laminate contacting face with the support 207, and a seal means is arranged around the coolant flow path 213.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to an electron source manufacturing apparatus and manufacturing method.

[0002]

2. Description of the Related Art Conventionally, two types of electron-emitting devices constituting an electron source are known, which are a thermoelectron-emitting device and a cold cathode electron-emitting device. The cold cathode electron-emitting device includes a field emission type, a metal / insulating layer / metal type, a surface conduction type electron-emitting device and the like.

The surface conduction electron-emitting device utilizes a phenomenon in which electron emission occurs when a thin film having a small area formed on a substrate is passed with a current in parallel with the film surface. The basic configuration, manufacturing method, etc. are described in, for example, Japanese Patent Application Laid-Open No. 7-2
It is disclosed in Japanese Patent No. 35255, Japanese Patent Laid-Open No. 8-171849, and the like.

The surface conduction electron-emitting device has a pair of device electrodes facing each other on a substrate and a conductive film connected to the pair of device electrodes and having an electron-emitting portion in a part thereof. It is characterized by. A crack is formed in a part of the conductive film. Further, a deposited film containing at least one of carbon and a carbon compound as a main component is formed at an end of the crack.

By arranging a plurality of such electron-emitting devices on a substrate and connecting each electron-emitting device with a wiring, an electron source having a plurality of surface-conduction electron-emitting devices can be produced.

Further, by combining the above-mentioned electron source and phosphor, a display panel of an image forming apparatus can be formed.

Conventionally, such a panel of an electron source has been manufactured as follows. That is, as the first manufacturing method, first, a plurality of elements each including a conductive film and a pair of element electrodes connected to the conductive film, and a wiring connecting the plurality of elements are formed on a substrate. A prepared electron source substrate. Next, the entire electron source substrate thus prepared is placed in a vacuum chamber. Next, after evacuating the inside of the vacuum chamber, a voltage is applied to each of the above elements through external terminals to form a crack in the conductive film of each element. Further, a gas containing an organic substance is introduced into the vacuum chamber, and a voltage is applied again to each element through an external terminal in an atmosphere in which the organic substance is present to deposit carbon or a carbon compound in the vicinity of the crack.

In the second manufacturing method, first, a plurality of elements each composed of a conductive film and a pair of element electrodes connected to the conductive film are formed on a substrate, and a wiring connecting the plurality of elements. An electron source substrate on which and are formed is created. Next, the produced electron source substrate and the substrate on which the phosphor is arranged are joined together with the support frame interposed therebetween to produce a panel of the image forming apparatus. Then, the inside of the panel is evacuated through an exhaust pipe of the panel, and a voltage is applied to each of the above elements through an external terminal of the panel to form a crack in the conductive film of each element. Further, a gas containing an organic substance is introduced into the panel through the exhaust pipe, and a voltage is applied again to the respective elements through an external terminal in an atmosphere in which the organic substance is present to deposit carbon or a carbon compound in the vicinity of the crack. Let

[0009]

Although the above manufacturing method has been adopted, the first manufacturing method, in particular, requires a larger vacuum chamber and a high-vacuum exhaust device as the electron source substrate becomes larger. You will need it. Further, in the second manufacturing method, it takes a long time to exhaust gas from the panel internal space of the image forming apparatus and to introduce a gas containing an organic substance into the panel internal space.

It is an object of the present invention to provide an electron source manufacturing apparatus which can be downsized and whose operability can be simplified. It is another object of the present invention to provide a method for manufacturing an electron source, which has an improved manufacturing speed and is suitable for mass production. Further, the present invention provides an electron source manufacturing apparatus and manufacturing method capable of easily forming a heating means or a cooling means on a support for supporting a large-sized substrate and capable of manufacturing an electron source having excellent electron emission characteristics. The purpose is to provide.

[0011]

In order to achieve the above object, the present invention is directed to an electron source substrate on which wirings, insulators and electron-emitting devices are formed, and covers a part of the electron source substrate. In an electron source manufacturing apparatus having a vacuum container, a support for mounting the electron source substrate is provided, and a difference in linear expansion coefficient between the support and the support is opposite to a predetermined value. The following flat plates are laminated, and at least one of the heating means and the cooling means is arranged on either of the laminated contact surfaces of the support and the flat plate. It is desirable to provide a sealing means around the cooling means.

An electron source manufacturing apparatus according to the present invention has a support for supporting a substrate on which a conductor is formed, a gas inlet and a gas outlet, and covers a partial area of the substrate surface. A container, means for introducing gas into the container, connected to the gas inlet, means for exhausting the container, connected to the gas outlet, and applying a voltage to the conductor And a means for doing so.

Further, the apparatus for manufacturing an electron source according to the present invention,
In the above-described electron source manufacturing apparatus, the surface of the support opposite to the substrate has a difference in linear expansion coefficient from the support of 3 × 1.
It is desirable that flat plates of 0 ⁻⁶ or less are laminated, a heater or a cooling pipe is formed on a laminated contact surface with the support or the flat plate, and a sealing means is provided around the cooling pipe.

The present invention will be described in more detail below. A more specific manufacturing apparatus according to the present invention firstly includes a support for supporting a substrate on which a conductor is formed in advance, and a container that covers the substrate supported by the support. Here, the container covers a part of the surface of the substrate, whereby a part of the wiring connected to the conductor on the substrate and formed on the substrate is exposed to the outside of the container. In this state, an airtight space can be formed on the substrate. Further, the container is provided with a gas inlet and a gas outlet,
A means for introducing gas into the container and a means for discharging gas inside the container are connected to the inlet and the outlet, respectively. As a result, the inside of the container can be set to a desired atmosphere. Further, the substrate on which the conductor is formed in advance is a substrate that serves as an electron source by forming an electron emitting portion on the conductor by performing an electrical treatment. Therefore, the manufacturing apparatus according to the present invention further includes means for performing electrical treatment, for example, means for applying a voltage to the conductor. In the above manufacturing apparatus, miniaturization is achieved, operability such as electrical connection with a power source in the above electrical processing is simplified, and design freedom such as the size and shape of the container is achieved. It becomes possible to introduce the gas into the container and discharge the gas to the outside of the container in a short time.

Further, the present invention relates to a method of manufacturing an electron source, wherein an electron source substrate on which wirings, insulators and electron-emitting devices are formed is processed, and a vacuum container covering a part of the electron source substrate is used. An electron source substrate is placed on a support, and a flat plate having a difference in linear expansion coefficient with the support below a predetermined value is laminated on a surface of the support opposite to the electron source substrate,
A step in which the temperature can be adjusted by at least one of the heating means and the cooling means provided on either of the support and the laminated contact surface with the flat plate, and the step of sealing the inside of the container,
And a step of forming an electron source on the electron source substrate in the sealed container.

Further, in a more specific manufacturing method according to the present invention, first, a substrate on which an electric conductor and wiring connected to the electric conductor are previously formed is arranged on a support, and a part of the wiring is formed. Except the conductor on the substrate is covered with a container. This allows
With a part of the wiring formed on the substrate exposed to the outside of the container, the conductor is arranged in the airtight space formed on the substrate. Next, the inside of the container is made into a desired atmosphere, and the conductor is electrically processed, for example, a voltage is applied to the conductor through a part of the wiring exposed outside the container. Here, the desired atmosphere is, for example, a reduced pressure atmosphere or an atmosphere in which a specific gas exists. Further, the electrical treatment is a treatment in which an electron emitting portion is formed on the conductor to serve as an electron source. In addition, the electrical treatment may be performed multiple times under different atmospheres. For example, a step of covering the conductor on the substrate with a container except for a part of the wiring and performing the electrical treatment with the inside of the container as a first atmosphere, and then with a second atmosphere inside the container. As a result, a step of performing the above electrical treatment is performed, and as a result, a good electron emitting portion is formed in the conductor and an electron source is manufactured. Here, the first and second atmospheres are preferably atmospheres in which the first atmosphere is depressurized, as described below,
Is an atmosphere in which a specific gas such as a carbon compound exists. In the above manufacturing method, electrical connection with the power source in the electrical processing can be easily performed. In addition, since the degree of freedom in designing the size and shape of the container is increased, introduction of gas into the container and discharge of gas outside the container can be performed in a short time, which improves the manufacturing speed and The reproducibility of the electron emission characteristics of the electron source, especially the uniformity of the electron emission characteristics of the electron source having a plurality of electron emission portions are improved.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION Next, preferred embodiments of the present invention will be described. 1, 2 and 3 show an electron source manufacturing apparatus according to an embodiment of the present invention, and FIG. 1 is a sectional view of the manufacturing apparatus according to the first embodiment and a connection diagram of pipes, etc. Two
FIG. 4 is a perspective view showing a peripheral portion of the electron source substrate in FIGS. 1 and 3. Further, FIG. 3 is a cross-sectional view of the manufacturing apparatus according to the second embodiment and a connection diagram of piping and the like.

In FIGS. 1, 2 and 3, 6 is a conductor serving as an electron-emitting device, 7 is an X-direction wiring, 8 is a Y-direction wiring, 10 is an electron source substrate, 11 is a support, and 12 is a vacuum container. , 15 is a gas inlet into the vacuum container 12, 16 is an exhaust port, 18 is a seal member arranged between the electron source substrate 10 and the vacuum container 12, and 19 is a diffusion plate arranged in the container 12. , 20 is a heater disposed on the support 11, 21 is hydrogen or organic substance gas contained in a container, 22 is a carrier gas contained in the container, 23 is a moisture removal filter, 24
Is a gas flow rate control device, 25a to 25f are valves, 26 is a vacuum pump, 27 is a vacuum gauge, 28 is piping, 30 is extraction wiring, 32 (32a, 32b) is a drive driver consisting of a power supply and current control system, 31 ( 31a and 31b) are wirings that connect the extraction wiring 30 of the electron source substrate 10 and the drive driver 32, 33 is an opening of the diffusion plate 19, and 41 is a heat conducting member.

Reference numeral 46 is an elevating shaft, 47 is an elevating and lowering drive unit for elevating and lowering the support body 11, 48 is an elevating and lowering control device for controlling the elevating and lowering of the support body 11, and 110 is a flat plate on which the support body 11 is laminated. The flat plate 110 has a difference in linear expansion coefficient with the support 11 of a predetermined value or less. This predetermined value is 3 x 1
It is preferably 0 ^-6 .

The support 11 holds and fixes the electron source substrate 10, and mechanically fixes the electron source substrate 10 by a vacuum chucking mechanism, an electrostatic chucking mechanism, a magnetic chucking or a fixing jig. It has a fixing mechanism. A heater 20 is provided inside the support body 11, and the electron source substrate 10 can be heated via the heat conduction member 41 as necessary.

The heat conducting member 41 is placed on the support 11 and is sandwiched between the support 11 and the electron source substrate 10 so as not to interfere with the mechanism for holding and fixing the electron source substrate 10. Alternatively, it may be installed so as to be embedded in the support 11.

The heat conducting member 41 absorbs the warp and undulation of the electron source substrate 10 and can reliably transmit the heat generated in the electric processing step to the electron source substrate 10 to the support 11 and radiate the heat. It is possible to prevent the source substrate 10 from being cracked or damaged, which can contribute to an improvement in yield.

In addition, in this electron source manufacturing apparatus, the heat generated in the electrical processing step is quickly and surely radiated to reduce the concentration distribution of the introduced gas due to the temperature distribution and the non-uniformity of the elements affected by the substrate heat distribution. It is possible to contribute to the reduction of the property, which makes it possible to manufacture an electron source having excellent uniformity.

The heat conducting member 41 can be formed using a viscous liquid substance such as silicone grease, silicone oil, or a gel substance. When the heat conducting member 41, which is a viscous liquid substance, has an adverse effect of moving on the support body 11, the support body 11 has a predetermined position and a region where the viscous liquid substance is present, that is, at least a conductor 6 formation region of the electron source substrate 10. A staying mechanism may be installed in accordance with the area so as to stay below. For example, the viscous liquid substance may be put in an O-ring or a heat resistant bag to form a sealed heat conducting member.

When an viscous liquid substance is retained by installing an O-ring or the like, in order to prevent an air layer from being formed between the electron source substrate 10 and the support 11 and not coming into contact properly, the heat conducting member 41 is used. Can be formed by using a vent hole or a method of injecting a viscous liquid substance between the substrate and the support 11 after the electron source substrate 10 is installed.

FIG. 3 is a schematic sectional view showing an electron source manufacturing apparatus according to the second embodiment of the present invention. This manufacturing apparatus includes an O-ring and an introduction pipe 45 communicating with the viscous liquid substance introduction port so that the viscous liquid substance stays in a predetermined region.

In this case, the viscous liquid substance is sandwiched between the support 11 and the electron source substrate 10, and if a mechanism for circulating the viscous liquid substance is provided while controlling the temperature, the heater 20 is replaced and the electron source substrate 10 is heated. It becomes a means or a cooling means. Further, it is possible to add a mechanism that can adjust the temperature to a target temperature, for example, a circulation type temperature adjusting device and a liquid medium.

The heat conducting member 41 may be an elastic member. As the material of the elastic member, a synthetic resin material such as Teflon (registered trademark) resin, a rubber material such as silicon rubber, a ceramic material such as alumina, or a metal material such as copper or aluminum can be used. These may be used in the form of a sheet or a divided sheet. Alternatively, a columnar shape such as a columnar shape or a prismatic shape, a projection shape such as a linear shape or a conical shape extending in the X direction or the Y direction according to the wiring of the electron source substrate, a spherical body, or a rugby ball shape (elliptical spherical body). A spherical body such as the above, or a spherical body having a shape in which protrusions are formed on the surface of the spherical body may be installed on the support 11.

The vacuum container 12 is a container made of glass or stainless steel, and is preferably made of a material that releases little gas from the container. The vacuum container 12 is positioned and arranged with respect to the electron source substrate 10, covers the region where the conductor 6 is formed except the extraction wiring portion of the electron source substrate 10, and is at least 1.33 × 10 ^−1. Pa (1 x 10 ^-3 T
orr) to the atmospheric pressure.

The seal member 18 is for maintaining the airtightness between the electron source substrate 10 and the vacuum container 12, and an O-ring, a rubber sheet or the like is used.

As the organic substance gas 21, an organic substance used to activate the electron-emitting device described later or a mixed gas obtained by diluting the organic substance with nitrogen, helium, argon or the like is used. Further, when performing a forming energization process described later, a gas for promoting the formation of cracks in the conductive film, for example, hydrogen gas having a reducing property is used as the vacuum container 12.
It is also possible to introduce it inside. In this way, when introducing gas in other steps, the gas introduction system, the introduction pipe,
If the vacuum container 12 is connected to the pipe 28 using the and valve 25e, it can be used.

Used to activate the electron-emitting device
Organic substances such as alkanes, alkenes, and alkyne fats
Group hydrocarbons, aromatic hydrocarbons, alcohols, alcohols
Dehydrides, ketones, amines, nitriles, pheno
And organic acids such as carboxylic acid and sulfonic acid.
You can More specifically, methane, ethane, propa
C such as_n H_{2n + 2}Saturated hydrocarbon represented by
C such as benzene and propylene _n H_2nEtc.
Saturated hydrocarbon, benzene, toluene, methanol, ethane
Nole, acetaldehyde, acetone, methyl ethyl ketone
Ton, methylamine, ethylamine, phenol, benzene
Zonitrile, acetonitrile, etc. can be used.

The organic substance gas 21 can be used as it is when the organic substance is a gas at normal temperature, and is evaporated or sublimated in the container when the organic substance is liquid or solid at normal temperature. Alternatively, it can be used by a method such as mixing it with a diluent gas. As the carrier gas 22, nitrogen or an inert gas such as argon or helium is used.

The organic substance gas 21 and the carrier gas 22 are mixed at a constant ratio and introduced into the vacuum container 12. The gas flow rate control device 24
Controlled by. The gas flow controller 24 is composed of a mass flow controller, a solenoid valve, and the like. These mixed gases are heated to an appropriate temperature by a heater (not shown) provided around the pipe 28, if necessary, and then introduced into the vacuum container 12 through the inlet 15. The heating temperature of the mixed gas is preferably equal to the temperature of the electron source substrate 10.

It is more preferable to provide a moisture removing filter 23 in the middle of the branch pipe of the pipe 28 to remove the moisture in the introduced gas. The moisture removal filter 23 can be configured by using a hygroscopic material such as silica gel, molecular sieve, or magnesium hydroxide.

The mixed gas introduced into the vacuum container 12 is exhausted at a constant evacuation speed by the vacuum pump 26 through the exhaust port 16, and the pressure of the mixed gas in the vacuum container 12 is kept constant. Vacuum pump 26 used in this embodiment
Is a low vacuum pump such as a dry pump, a diaphragm pump, or a scroll pump, and an oil-free pump is preferably used.

Although depending on the type of organic substance used for activation, in the present embodiment, the pressure of the mixed gas is such that the mean free path λ of the gas molecules constituting the mixed gas is the vacuum container 1.
It is preferable that the pressure is not less than the inner size of 2 so as to be sufficiently small, from the viewpoint of shortening the time of the activation step and improving the uniformity. This is a so-called viscous flow region, which is a pressure in the range of several hundred Pa (several Torr) to atmospheric pressure.

If a diffusion plate 19 is provided between the gas inlet 15 of the vacuum container 12 and the electron source substrate 10, the flow of the mixed gas is controlled and the organic substance is uniformly supplied to the entire surface of the substrate 10. Therefore, the uniformity of the electron-emitting device is improved, which is preferable. The extraction wiring 30 of the electron source substrate 10 is the vacuum container 1
It is external to the wiring 2, and is connected to the wiring 31 by using a TAB wiring or a probe, and is connected to the drive driver 32.

The same applies to this embodiment, and also to the embodiments to be described later, but the vacuum container 12 includes the electron source substrate 1
Since it is sufficient to cover only the conductor 6 on the 0, the device can be downsized. Further, since the wiring part of the electron source substrate 10 is located outside the vacuum container 12, the electron source substrate 10 and the power supply device (driving driver 32) for electrical processing can be easily electrically connected.

As described above, the manufacturing apparatus according to the present embodiment uses the drive driver 32 in the state where the mixed gas containing the organic substance is flown in the vacuum container 12 and the respective electrons on the substrate 10 through the wiring 31. By applying a pulse voltage to the conductor 6 serving as an emitting element, the electron emitting element can be activated.

Specific examples of the method of manufacturing an electron source using the above-described manufacturing apparatus will be described in detail in the following embodiments. An image forming apparatus 68 as shown in FIG. 4 can be created by combining the electron source and the image forming member. FIG. 4 is a schematic diagram of the image forming apparatus. Figure 4
In, 6 is an electron-emitting device, 62 is a support, and 66 is
A face plate including a glass substrate 63, a metal back 64 and a phosphor 65, 67 is a high voltage terminal, and 68 is an image forming apparatus.

The image forming apparatus 68 includes each electron-emitting device 6
, A scanning signal and a modulation signal are respectively applied by a signal generating means (not shown) through the external terminals Dx1 to Dxm in the X direction and the external terminals Dy1 to Dyn in the Y direction, so that electrons are emitted and the high voltage terminal 67. Through this, a high voltage of 5 kV is applied to the metal back 64 or a transparent electrode (not shown) to accelerate the electron beam, collide with the phosphor 65 to excite it, and emit light to display an image.

In some cases, the electron source substrate 10 itself also serves as a rear plate and is formed of a single substrate. Further, the scanning signal wiring is, for example, one-side scanning wiring as shown in FIG. 4 as long as the number of elements is not affected by the applied voltage drop between the electron emitting element near the external terminal Dx1 and the electron emitting element far from the external terminal Dx1. However, if the number of elements is large and there is a voltage drop effect, the wiring width can be widened, the wiring thickness can be thickened, or a method of applying a voltage from both sides can be adopted.

The present invention relates to the embodiment described above, and particularly to the portion of the support 11. In particular, the present invention is
It is intended to solve the problem of facilitating the processing of a large-sized support 11 and easily configuring a heating means or a cooling means of the support 11.

In particular, for this purpose, the present invention laminates flat plates 110 having a linear expansion coefficient difference of 3 × 10 ⁻⁶ or less with the support 11 on one surface, and a heater, a heater, and Alternatively, it is characterized by constituting a cooling pipe and providing a sealing means around the cooling pipe.

[0046]

EXAMPLES The present invention will be described in detail below with reference to specific examples, but the present invention is not limited to these examples, and each element within the range in which the object of the present invention is achieved. It also includes those that have been replaced or the design changed.

[First Embodiment] A first embodiment of the present invention will be described below. On the surface of the glass substrate 63, a plurality of row-direction wirings 7, a plurality of column-direction wirings 8 as shown in FIG. 5, and a matrix of wirings formed by these wirings and composed of device electrodes 2, 3 and PdO. Forming the membrane 4,
The electron source substrate 10 was produced. Next, the subsequent steps were performed using the manufacturing apparatus shown in FIG.

In FIG. 6, reference numeral 202 denotes a vacuum chamber, 2
Reference numeral 03 is an O-ring, 204 is benzonitrile which is an activating gas, 205 is an ionization vacuum gauge which is a vacuum gauge, 206 is a vacuum exhaust system, 207 is a substrate support, and 208 is a substrate support 20.
7 is an electrostatic chuck, 210 is a flat plate, 212 is an electric heater, 213 is a coolant channel, 214 is a vacuum exhaust system,
215 is a probe unit capable of electrically contacting a part of the wiring on the electron source substrate 10, and 216 is a probe unit 2.
A pulse generator connected to 15, V1 is a valve, and 218 is a gas supply system for supplying He gas. In the figure,
The electric circuit of the electrostatic chuck 208 is not shown.

The electron source substrate 10 was placed on the substrate support 207 and attracted by the electrostatic chuck 208. Next, a gas supply system 218 is provided between the electron source substrate 10 and the substrate support 207.
He gas was introduced to maintain the pressure at 500 Pa. The He gas has a function of improving heat conduction between the electron source substrate 10 and the electrostatic chuck 208. He gas is most preferable, but gases such as N ₂ and Ar can be used, and the gas species is not limited as long as desired heat conduction can be obtained. Next, the vacuum chamber 202 is placed on the electron source substrate 10 via the O-ring 203 so that the wiring ends are exposed to the outside of the vacuum chamber 202, and a vacuum airtight space is formed in the vacuum chamber 202. The space was evacuated by the vacuum evacuation system 206 until the pressure became 1 × 10 ⁻⁵ Pa or less. Cooling water having a water temperature of 15 ° C. is caused to flow through the refrigerant flow path 213, and further, an electric heater 21 is supplied from a power source (not shown) having a temperature control function.
2 was supplied with power to maintain the electron source substrate 10 at a constant temperature of 50 ° C.

Next, the probe unit 215 is brought into electrical contact with the wiring end portion on the electron source substrate 10 exposed outside the vacuum chamber 202, and the probe unit 215 is connected.
1 msec from the pulse generator 216 connected to
120 triangular pulses with a cycle of 10 msec and a peak value of 10 V
Application was carried out for sec and a forming treatment step was carried out. The heat generated by the current flowing during the forming process is
The electron source substrate 1 is efficiently absorbed by the electrostatic chuck 208.
0 was maintained at a constant temperature of 50 ° C., and good forming treatment could be performed, and damage due to thermal stress could be prevented. By the above forming process, the gap G shown in FIG.
Was formed on the conductive film 4.

Next, the current flowing through the electric heater 212 was adjusted to maintain the electron source substrate 10 at a constant temperature of 60 ° C.
While the valve V1 was opened and the pressure was measured by the ionization vacuum gauge 205 in the vacuum chamber 202, benzonitrile having a pressure of 2 × 10 ⁻⁴ Pa was introduced. From the pulse generator 216,
Through the probe unit 215, a triangular pulse having a base of 1 msec, a cycle of 10 msec, and a peak value of 15 V was applied for 60 minutes to perform activation treatment. Similar to the forming process step, the heat generated by the current flowing during the activation process is efficiently absorbed by the electrostatic chuck 208, the electron source substrate 10 is kept at a constant temperature of 60 ° C., and the activation is performed well. It was also possible to prevent damage due to thermal stress. By the above activation treatment, as shown in FIGS. 7 and 8, the carbon film 29 was formed with the gap 5 therebetween.

The electron source substrate 10 that has undergone the above steps is
The face plate 66 on which the glass substrate 63, the phosphor 65 and the like are arranged is aligned and sealed with low melting point glass to manufacture a vacuum envelope. Furthermore, steps such as vacuum evacuation, baking, and sealing are performed in the envelope,
A panel-shaped image forming apparatus 68 shown in FIG.

In this embodiment, since the electrostatic chuck 208 and He gas were used in the forming process and the activation process, it is possible to form a good surface conduction electron-emitting device with uniform characteristics and improve the uniformity. It was possible to manufacture the panel-shaped image forming apparatus 68 having the above image performance, prevent damage due to thermal stress, and improve the yield.

[Embodiment 2] FIG. 9 is a view for explaining in detail an embodiment of a manufacturing apparatus according to the present invention, and is a cross-sectional view showing a portion of the substrate support 207 in FIG. In the figure, 208 is an electrostatic chuck, 210 is a flat plate, 212 is a heater, 213 is a coolant channel, and 231 is an O-ring.

In this manufacturing apparatus, an electrostatic chuck 208 installed on a support 207 attracts and fixes an electron source substrate (not shown). In this apparatus, a flat plate 210 having a difference in linear expansion coefficient between the support 207 and the support 207 of 3 × 10 ⁻⁶ or less is arranged on the surface of the support 207 opposite to the electrostatic chuck 208.
A heater 212 is installed at the joint between 7 and the flat plate 210,
A coolant channel 213 is formed. The heater 212 is inserted in a groove portion formed by processing the support 207 and the flat plate 210 into a semi-cylindrical cross section. The coolant flow path 213 is formed by processing at least one of the support 207 and the flat plate 210 into a groove, and allows a coolant to flow. In order to prevent the refrigerant from flowing out to the surroundings, especially the heater part, for example, the O-ring 23
It is sealed with 1. This manufacturing apparatus includes a heater 212
The temperature of the support 207 and the flat plate 210 is controlled by applying an electric current to the substrate to generate heat or by flowing a coolant in the coolant channel 213, and the electron source substrate adsorbed by the electrostatic chuck 208 is adjusted to a predetermined temperature. You can

FIG. 10 is a view for explaining the shape of the flat plate of the manufacturing apparatus according to the present invention in detail, and is a perspective view of the flat plate 210 in FIG. In the figure, 213 is a refrigerant channel, 232 is a refrigerant inlet or outlet, 234 is an O-ring groove, and 235 is a heater groove. From the inlet at one end of the refrigerant channel 213, the refrigerant is
It flows to the discharge port at the other end and does not flow to the outside of an O-ring (not shown) installed in the O-ring groove. 235 is a heater groove of a semi-cylindrical surface on which the heater is installed, and the clearance with the heater is preferably 0.1 mm or less.

When the support 207 or the like has a temperature change of 50 ° C. or more, it is necessary to adjust the linear expansion coefficient of the electron source substrate or the electrostatic chuck to the support 207 or the like so that the deformation or the destruction due to the temperature strain or the substrate It is said to be generally preferable because it makes it possible to prevent rubbing.
Materials known as AlSiC, Kovar (registered trademark), Invar (registered trademark) and the like are typical materials for the support. However, as the size of the support 207 increases with the increase in size of the electron source substrate, the support 20 such as AlSiC is used.
Direct machining of the slot 235 of the heater insertion portion or the long hole of the coolant flow path 213 in 7 requires a very long processing time, resulting in a significant cost increase. In some cases, it could not be processed. With the configuration shown in FIG. 9, even if the support body 207 has a large size, the processing is easy and the cost can be reduced.

Further, even if the temperature of the support 207 or the like changes by 50 ° C. or more, the thermal deformation that impairs the adhesion between the support 207 and the electron source substrate and the damage of the electrostatically fragile structure are prevented. I was able to.

As described above, according to this embodiment, the difference in the linear expansion coefficient between the one surface of the support 207 and the support 207 is 3 ×.
By laminating flat plates 210 of 10 ⁻⁶ or less, forming a heater or a cooling pipe on the laminated contact surfaces, and providing sealing means around the cooling pipe, a large-sized support 207 can be obtained.
The heating means and / or the cooling means of the support 207 can be easily configured, and the heat generated from the electron source substrate can be efficiently recovered without distortion of the support 207 even at high temperature. .

Also in this embodiment, as in the first embodiment,
Electrostatic chuck 2 during forming process and activation process
Since 08 and He gas are used, a good surface conduction electron-emitting device having uniform characteristics can be formed, and a panel-like image forming apparatus having image performance with improved uniformity can be manufactured. It was possible to prevent damage due to thermal stress and improve the yield.

[0061]

According to the present invention, it is possible to provide an electron source manufacturing apparatus which can be miniaturized and can be easily operated.
Further, according to the present invention, it is possible to provide an electron source manufacturing apparatus and manufacturing method which are suitable for mass production because the manufacturing speed is improved.

Further, according to the present invention, a large-sized support can be processed, and the heating means or the cooling means for the support can be constructed easily, that is, at low cost. It is possible to provide an electron source manufacturing apparatus and manufacturing method capable of efficiently collecting heat generated from an electron source substrate by a support and manufacturing an electron source having excellent electron emission characteristics.

Further, according to the present invention, it is possible to provide an image forming apparatus having excellent image quality.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a configuration of an electron source manufacturing apparatus according to a first embodiment of the present invention and a connection diagram of pipes and the like.

FIG. 2 is a perspective view showing a peripheral portion of the electron source substrate in FIGS. 1 and 3 with a part thereof cut away.

FIG. 3 is a cross-sectional view showing a configuration of an electron source manufacturing apparatus according to a second embodiment of the present invention and a connection diagram such as piping.

FIG. 4 is a partially cutaway perspective view showing the configuration of the image forming apparatus.

FIG. 5 is a plan view showing an electron source according to the present invention.

FIG. 6 is a cross-sectional view showing a manufacturing apparatus according to another embodiment of the present invention and a connection diagram such as piping.

FIG. 7 is a plan view showing a configuration of an electron-emitting device according to the present invention.

FIG. 8 is a diagram showing a configuration of an electron-emitting device according to the present invention.
FIG.

FIG. 9 is a cross-sectional view showing an example of a support and a flat plate of the electron source manufacturing apparatus according to the present invention.

FIG. 10 is a perspective view showing an example of a flat plate of the electron source manufacturing apparatus according to the present invention.

[Explanation of symbols]

1: substrate, 2, 3: element electrode, 4: conductive thin film, 5: electron emitting portion, 6: electron emitting element (conductor), 7: X direction wiring, 8: Y direction wiring, 9: insulating layer, 10: electron source substrate,
11: support, 12: vacuum container, 15: gas inlet,
16: exhaust port, 18: sealing member, 19: diffusion plate, 2
0: heater, 21: organic substance gas, 22: carrier gas, 24: gas flow rate control device, 25 (25a to 25)
f): valve, 26: vacuum pump, 27: vacuum gauge, 2
8: piping, 29: carbon film, 30: extraction wiring, 31
(31a, 31b): Wiring, 32: Drive driver, 3
3: Opening of diffusion plate 19, 41: Heat conducting member, 45: Viscous liquid substance introducing pipe, 61: Rear plate, 62: Support frame, 63: Glass substrate, 64: Metal back, 65: Phosphor, 66: Face plate, 67: high-voltage terminal, 6
8: image forming apparatus, 110: flat plate, 202: vacuum chamber, 203: O-ring, 204: active gas, 205: vacuum gauge, 206: vacuum exhaust system, 207: substrate support, 20
8: Electrostatic chuck, 210: Flat plate, 212: Electric heater, 213: Refrigerant flow path, 214: Vacuum exhaust system: 215:
Probe unit, 216: pulse generator, 218: gas supply system, 231: O ring, 232: inlet or outlet, 234: O ring groove, 235: heater groove.

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Akihiro Kimura             Kyano, 3-30-2 Shimomaruko, Ota-ku, Tokyo             Within the corporation F-term (reference) 5C012 AA05 PP01 PP08                 5C031 DD17 DD19

Claims (5)

[Claims] 1. A manufacturing apparatus of an electron source, comprising an electron source substrate on which wiring, an insulator, and an electron-emitting device are formed, and having a vacuum container that covers a part of the electron source substrate. A flat plate having a support to be placed and having a difference in linear expansion coefficient between the support and the support opposite to the electron source substrate is equal to or less than a predetermined value is stacked. At least one of a heating means and a cooling means for adjusting the temperature of the electron source substrate is arranged on either of the stacked contact surfaces of the electron source manufacturing apparatus. 2. The apparatus for manufacturing an electron source according to claim 1, further comprising sealing means around the cooling means. 3. The predetermined value of the difference between the linear expansion coefficients is 3 × 10.
^6. The electron source manufacturing apparatus according to claim 1, wherein the electron source manufacturing method is ^-6 . 4. A method of manufacturing an electron source, wherein an electron source substrate on which wiring, an insulator, and an electron-emitting device are formed is processed, and a vacuum container covering a part of the electron source substrate is used. It is placed on a support, and a flat plate having a difference in linear expansion coefficient between the support and the electron source substrate opposite to the support is laminated at a predetermined value or less, and the support and the flat plate. A step of making the temperature of the electron source substrate controllable by at least one of a heating means and a cooling means provided on either of the laminated contact surfaces, and sealing the inside of the container; and the electron in the sealed container. And a step of forming an electron source on the source substrate. 5. The predetermined value of the difference between the linear expansion coefficients is 3 × 10.
^{6. The} method for manufacturing an electron source according to claim 4, wherein the electron source is ^-6 .