JP2004241299A - Device and method for manufacturing electron source - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To enhance a yield in manufacture by easily and safely peeling off a substrate from a substrate stage after a process is finished. <P>SOLUTION: When manufacturing an electron source substrate by a hood device, a means (vacuum adsorption or the like) for holding the substrate is provided in a vessel. In order to peel off the substrate from a supporting body carrying the substrate on it, this adsorbing and holding means is used. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an apparatus and a method for manufacturing an electron source.
[0002]
[Prior art]
As a self-luminous image display device, a plasma display, an EL display device, an image display device using an electron beam, and the like are known. In recent years, the demand for a larger screen and higher definition of an image display device has been increasing, and the need for a self-luminous image display device has been increasing more and more.
[0003]
For example, as a self-luminous image display device using an electron beam, a face plate and a rear plate, and an image display using an electron source that generates an electron beam in an envelope that can be maintained in a vacuum sandwiched between outer frames. An apparatus, in which surface conduction electron-emitting devices are arranged on a matrix as an electron source, and an electron beam emitted from the electron source is accelerated to irradiate a phosphor provided on a face plate to emit light. A thin image display device for displaying an image by this has been filed by the present applicant (for example, see Patent Literature 1, Patent Literature 2, Patent Literature 3, Patent Literature 4, Patent Literature 5, and Patent Literature 6).
[0004]
The surface conduction electron-emitting device is characterized by having, on a substrate, a pair of electrodes facing each other, and a conductive film connected to the pair of electrodes and having a gap in a part thereof. . In the gap, a carbon film containing at least one of carbon and a carbon compound as a main component is disposed.
[0005]
By arranging a plurality of such electron-emitting devices on a substrate and connecting the electron-emitting devices by wiring, an electron source including a plurality of surface conduction electron-emitting devices can be manufactured. Further, an image display device can be formed by combining the electron source and a phosphor.
[0006]
Conventionally, manufacture of such an electron source and an image display device has been performed as follows. First, a plurality of units each including a conductive film and a pair of electrodes connected to the conductive film and wirings connected to electrodes included in each of the plurality of units are formed on a substrate.
[0007]
Next, a voltage is applied to each of the units through external terminals in an atmosphere in which the substrate is evacuated using a vacuum device, and a gap is formed in the conductive film forming each unit (forming step).
[0008]
Further, a gas of a carbon compound is introduced, and a voltage is again applied to each of the units through an external terminal under the atmosphere. By this voltage application, a carbon film mainly containing at least one of carbon and a carbon compound is arranged near the gap (activation step). As a result, each unit is turned into an electron-emitting device, and an electron source including a plurality of electron-emitting devices is created. After that, the substrate on which the electron source is formed and the substrate on which the phosphor is arranged are joined at intervals of several millimeters to manufacture a panel of the image display device.
[0009]
More specifically, as a forming step and an activation step and a manufacturing apparatus for performing the forming step and the activation step, a method and an apparatus disclosed in Patent Literature 7 can be mentioned, which will be described below.
[0010]
FIG. 1 is a diagram illustrating an electron source manufacturing apparatus including a support and a container. An exhaust device for exhausting the inside of the container and a gas introducing device for introducing an organic substance as a gas into the container are connected to the container. On the other hand, the support has an electrostatic chuck inside to support the substrate with electrostatic force.
[0011]
The substrate is placed on a support having an electrostatic chuck, and the surface of the substrate is covered with a container for exhausting a part of the region including the unit on the substrate. This makes it possible to evacuate the surface of the substrate having each unit to a vacuum or to expose the organic substance to an atmosphere at a desired pressure and partial pressure. Further, since a part of each wiring formed so as to be connected to each unit is exposed, a desired electric signal (potential) is supplied from a signal generator (power supply) 117 to a pair of electrodes constituting each unit. Through a connection means 116.
[0012]
After the activation step, the container is removed from the surface of the substrate, and the substrate 101 obtained by peeling the substrate from the support becomes an electron source substrate.
[0013]
Next, a face plate having a phosphor on the inside, an exhaust pipe made of a glass tube, and a support frame provided with a getter mainly containing Ba are temporarily fixed to face each other with a frit glass sandwiched therebetween, and inert gas is used. It is baked in a heating furnace in an atmosphere to produce a vacuum-tight envelope.
[0014]
Next, an exhaust pipe is connected to the vacuum exhaust device, and the inside of the envelope is evacuated. Thereafter, the exhaust pipe is chipped off by a burner or the like, and further, the getter is flashed by high frequency heating to form a Ba film, and the vacuum in the envelope after the chip off is maintained. Thus, an image display device including the envelope is manufactured.
[0015]
[Patent Document 1]
JP-A-7-235255
[Patent Document 2]
JP-A-11-31461
[Patent Document 3]
JP-A-8-171849
[Patent Document 4]
JP 2000-311594 A
[Patent Document 5]
JP-A-11-195374
[Patent Document 6]
EP-A-0908916
[Patent Document 7]
JP 2001-325880 A
[0016]
[Problems to be solved by the invention]
In the above-described forming step and activation step, Joule heat is generated on the surface of the substrate 71 by the current flowing through the wiring, and the substrate surface is heated. Therefore, when the number of the units that perform the forming step and the activation step increases, the degree of increase in the temperature of the substrate may increase and the substrate may be deformed. Therefore, it has been practiced to use an electrostatic force to cause the substrate to be adsorbed on a support so as not to be deformed, and then to conduct the generated heat to the support to suppress a rise in the temperature of the substrate.
[0017]
In particular, in order to improve the thermal conductivity between the support and the back surface of the substrate, it is necessary to fill a gas such as He with a sealing material (for example, an O-ring) in a shape along the outer peripheral portion of the substrate. An arrangement can be made to maintain this atmosphere.
[0018]
Since the deformation of the substrate is suppressed by the action of the support, the electrical connection between the voltage applying means and the wiring connected to each unit is stably performed. Further, when the temperature difference within the substrate surface becomes large, the substrate becomes large. Is not damaged.
[0019]
However, the force by which the support sucks the substrate is proportional to the area of the substrate. Therefore, when the area of the electrostatic chuck is large, the residual suction force also increases.
[0020]
In addition, as described above, when a sealing material is present between the back surface of the substrate and the support, the temperature rise due to heat generation of the substrate in the activation process and the force of the support to absorb the substrate are large, so that the activation process is terminated. Also, the sealing material acts as an adhesive layer, and the substrate is stuck on the support.
[0021]
Therefore, it takes a considerable amount of time and force to peel the substrate from the support after the activation step, and a local force may be applied to the substrate to peel the substrate from the support. There was also the problem of doing.
[0022]
The present invention has been made by focusing on the above points, and in the manufacture of an electron source substrate by a hood device, after the process is completed, the substrate is easily and safely separated from the substrate stage to improve the production yield. An object of the present invention is to provide an apparatus and a method for manufacturing an electron source.
[0023]
[Means for Solving the Problems]
The electron source manufacturing apparatus of the present invention has a support for supporting a substrate on which a conductor is formed, an inlet for gas and an outlet for gas, covering a partial area of the substrate surface, and A container capable of holding and holding a substrate, a means connected to a gas inlet, a means for introducing a gas into the container, a means connected to an exhaust port for the gas, means for exhausting the inside of the container, and And means for applying a voltage to the body.
[0024]
The method for manufacturing an electron source according to the present invention is a method for manufacturing an electron source including a plurality of electron-emitting devices,
A first main surface and a second main surface facing the first main surface, and a pair of electrodes and a conductive member disposed between the pair of electrodes on the first main surface; A plurality of units comprising a film, and a step of fixing a substrate on which a wiring connecting the plurality of units is arranged on a support,
By covering a part of the first main surface of the substrate with a container, the plurality of units are arranged in a space formed by the first main surface of the substrate and the container, and the unit is provided outside the space. Arranging a part of the wiring;
Applying a voltage to the plurality of units through a part of the wiring outside the space in a state where the inside of the space is a desired atmosphere; and adsorbing and holding a part of the first main surface of the substrate by a container. And a step of peeling the substrate from the support.
[0025]
According to the present invention, by partially covering the first main surface of the substrate with the container, the electrical connection between the power supply and the wiring in the electrical processing (forming or activation) can be easily performed in the atmosphere. It can be carried out. Further, since the degree of freedom in designing the size and shape of the container is increased, the introduction of gas into the container and the discharge of gas out of the container can be performed in a short time. The reproducibility and uniformity of the electron emission characteristics of the electron source to be used can be improved. As a result, an excellent display image with high uniformity can be obtained even in an image display device using the electron source.
[0026]
Further, according to the present invention, in the forming step and the activation step, Joule heat generated on the substrate surface can be efficiently controlled by the current flowing through the wiring. Therefore, even if the number of the units to be processed increases, the temperature rise and temperature distribution of the substrate are suppressed, the substrate deformation due to heat can be reduced, electric signals can be connected well, and the substrate is damaged. Can be prevented. As a result, the occurrence of defective products is reduced, the yield is improved, and the process can flow safely. Even if the substrate size becomes large, the temperature of the substrate to be processed can be controlled to a desired temperature by performing independent temperature control for each fixing means (electrostatic chuck). Thereby, the temperature can be controlled with high uniformity on the substrate, so that the surface conduction electron-emitting device can be formed with high uniformity. As a result, the performance of the electron source and the image display device can be improved.
[0027]
The present invention is characterized in that when the substrate adsorbed on the support is separated from the support after the activation step, the substrate is adsorbed in the container used in the forming and activation steps.
[0028]
As means for sucking the substrate by the container, suction by vacuum evacuation may be mentioned.
[0029]
Since the container itself has a function of covering a part of the substrate surface and evacuating the container, it can be used for substrate adsorption. However, as the size of the substrate increases, the suction area also increases, so that the substrate is damaged by a large stress from the back surface of the suction surface due to atmospheric pressure.
[0030]
In the present invention, it is possible to separate the substrate from the support without damaging the substrate even if the substrate has a large area by limiting the area where the substrate is vacuum-sucked by the container.
[0031]
In particular, in the case of the manufacturing apparatus of the present invention, the substrate is opposed to the position of the seal member via the substrate in order to peel the substrate from the support member against the adhesive force of the seal member between the support and the back surface of the substrate. By performing the vacuum suction only at the position, the substrate can be efficiently and safely separated from the support.
[0032]
In addition, if it explains in more detail, this invention could solve the said subject by the following structures.
[0033]
(1) It has a support for supporting a substrate on which a conductor is formed, a gas introduction port and a gas exhaust port, covers a partial area of the substrate surface, and can adsorb and hold the substrate. A container connected to a gas inlet, a means for introducing a gas into the container, a gas outlet connected to a means for evacuating the container, and applying a voltage to the conductor. Means for producing an electron source.
[0034]
(2) The apparatus for manufacturing an electron source according to (1), wherein the container has means for evacuating a part of the substrate surface area covered by the container.
[0035]
(3) The apparatus for manufacturing an electron source according to (2), wherein the area to be evacuated is one continuous area.
[0036]
(4) The apparatus for manufacturing an electron source according to (3), wherein the region to be evacuated is a region other than a region surrounded by one closed curve in the substrate surface region covered by the container.
[0037]
(5) The apparatus for manufacturing an electron source according to any one of (1) to (4), further including a unit for fixing the substrate to the support.
[0038]
(6) The apparatus for manufacturing an electron source according to any one of (1) to (5), wherein the means for fixing the substrate to the support is an electrostatic chuck.
[0039]
(7) The electron source according to any one of (1) to (6), further including a seal member provided between the support and the substrate, and a unit for introducing a gas into the seal member. Manufacturing equipment.
[0040]
(8) The means for adsorbing and holding the support by the container is disposed at a position facing the sealing material between the support and the substrate via the substrate. An apparatus for manufacturing an electron source according to claim 1.
[0041]
(9) A method for manufacturing an electron source including a plurality of electron-emitting devices, comprising: a first main surface; and a second main surface facing the first main surface, wherein the first main surface is provided. A substrate on which a plurality of units each including a pair of electrodes and a conductive film provided between the pair of electrodes and wirings connecting the plurality of units are provided is fixed on a support. Forming a plurality of units in a space defined by the first main surface of the substrate and the container by covering a part of the first main surface of the substrate with a container, Disposing a part of the wiring outside; applying a voltage to the plurality of units through a part of the wiring outside the space in a state where the space is in a desired atmosphere; A step of adsorbing and holding a part of the main surface by a container to peel off the substrate from the support Method of manufacturing an electron source characterized by and.
[0042]
(10) The method for manufacturing an electron source according to (9), wherein the step of setting the inside of the space to a desired atmosphere includes a step of exhausting the inside of the space.
[0043]
(11) The method of manufacturing an electron source according to (9) or (10), wherein the step of setting the inside of the space to a desired atmosphere includes a step of introducing a gas into the space.
[0044]
(12) The method according to any one of (9) to (11), wherein the step of fixing the substrate on the support further includes a step of vacuum-sucking the substrate and the support. The method for producing the electron source according to the above.
[0045]
(13) The step of fixing the substrate on the support further includes a step of electrostatically adsorbing the substrate and the support. 3. The method for producing an electron source according to claim 1.
[0046]
(14) The step of adsorbing and holding a part of the first main surface of the substrate by a container and separating the substrate from the support is performed after removing a force for fixing the substrate on the support. The method of manufacturing an electron source according to any one of (9) to (13), wherein the method is performed.
[0047]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0048]
FIG. 1 is a schematic view showing an example of an electron source manufacturing apparatus according to the present invention. In FIG. 1, reference numeral 101 denotes an element formation substrate (or simply, “substrate”). 102 is a container. Reference numerals 103 and 121 denote sealing members such as O-rings, which are members for hermetically joining the container 102 and the substrate 101.
[0049]
Reference numeral 104 denotes a substance to be introduced into the container 102. When this apparatus is used in the activation step, a carbon compound is used. On the other hand, when the present apparatus is used in the forming step, the substance 104 is not necessarily used, but a substance having a reducing property with respect to a conductive film constituting a unit of the substrate 101 described later is preferably used. . When an oxide such as PdO is used as the conductive film forming the unit, hydrogen is preferably used as the reducing substance.
[0050]
Reference numeral 105 denotes an ionization vacuum gauge which is a vacuum gauge. 106 is an evacuation system. Reference numeral 107 denotes a plurality of fixing members (hereinafter, referred to as “electrostatic chucks”). Reference numeral 108 denotes a conductive member (electrode) embedded in the electrostatic chuck 107. Reference numeral 109 denotes a groove formed on the surface of the electrostatic chuck 107. The groove 109 is not always necessary, but when the size of one electrostatic chuck 107 is large, or as described in detail later, a gas is used as a heat conductor between the surface of the electrostatic chuck 107 and the substrate 101. When it is used, it is preferably used.
[0051]
Reference numeral 110 denotes a power supply for applying a high DC voltage to the electrode 108. 111 is a heating unit. 112 is a cooling unit. Reference numeral 113 denotes a temperature control unit on which the heating unit 111 and the cooling unit 112 are mounted. The temperature control means 113 is not necessarily required in this example, but is preferably used when the substrate 101 is large. Further, in the example described here, the temperature control unit 113 is formed of a single unit, but the temperature control unit may be formed of a plurality of temperature control units. When the temperature control means is composed of a plurality of temperature control means, the number of the temperature control means and the number of the electrostatic chucks 107 are the same, and one unit of the temperature control means and one electrostatic chuck is constituted. Is preferred.
[0052]
Reference numeral 114 denotes a support, which shows an example having a temperature control unit 113 and a plurality of electrostatic chucks 107 mounted on the temperature control unit 113. Reference numeral 115 denotes an adsorption exhaust system. 116 is a connection means (terminal). 117 is a signal generator. V1 to V4 are valves. Note that the container 102 can be moved up and down with respect to the support 114.
[0053]
In the above configuration, the substrate 101 includes a substrate having a first main surface and a second main surface. The substrate 101 is mainly composed of a glass substrate, and a conductor is formed on its second main surface as an electrode in order to form an electrostatic force by the electrostatic chuck 107. The conductor disposed on the second main surface of substrate 101 is preferably disposed in a film shape. As the material of the conductor, metals, semiconductors, metal oxides and the like can be used. The resistivity of the conductor is preferably 1 × 109 [Ωcm] or less. Further, on the first main surface of the substrate 101, a plurality of units each including a pair of electrodes and a conductive film connecting the electrodes, and a plurality of wirings connected to each of the units are formed. I have.
[0054]
As an embodiment of the temperature control means 113, an example in which a heating unit 111 and a cooling unit 112 for temperature control are included here is shown. As the heating unit 111, an electric heater is the easiest to use, but a high-temperature medium may be introduced, and the heating unit is not limited to the means as long as it can be heated. In addition, although it is preferable to use water as a cooling medium for the cooling unit 112, cooling by a Peltier element is also possible, and the means is not limited as long as it can be cooled. Alternatively, the high-temperature medium and the refrigerant may be the same, and heating and cooling may be performed by a single means. Further, the heating unit 111 and the cooling unit 112 can be controlled by a controller (not shown) such as a personal computer, so that the temperature of the temperature control unit 113 can be controlled to a desired value.
[0055]
In the example of the apparatus described here, a plurality of electrostatic chucks 107 are mounted on the temperature control unit 113. In general, when a thin film is formed on the surface of a glass substrate, a unique “warp” occurs, which is governed by the material and process conditions, due to differences in residual stress and coefficient of thermal expansion. In addition, a glass substrate or the like often has an undulation (short-period wavy surface) at the time of creation. As described above, if the element forming substrate 101 has “warp” or “undulation”, the electrostatic chucking force of the electrostatic chuck 107 decreases, and if the substrate 101 is too large in warp, suction cannot be performed. This warpage increases as the area of the element forming substrate 101 increases. Therefore, a plurality of electrostatic chucks 107 are used to prevent the gap between the element forming substrate 101 and the surface of each electrostatic chuck 107 from being widened.
[0056]
Further, in order to improve thermal contact between the element forming substrate 101 and the electrostatic chuck 107, a groove 109 is provided on the surface of the electrostatic chuck 107, and the groove (between the element forming substrate 101 and the electrostatic chuck 107) is formed in the groove. It is effective to introduce a gas (gas 2). When the element forming substrate 101 and the electrostatic chuck 107 are microscopically point-contact, and there is no gas and the temperature is 200 ° C. or less, only heat conduction through the point-contact portion is a thermal contact. There is no heat transfer.
[0057]
On the other hand, as described above, since the gas 2 is introduced between the element forming substrate 101 and the electrostatic chuck 107, thermal contact due to convection is added, so that thermal contact is improved. As a result of the experiment, it was confirmed that the gas 2 had a sufficient effect if the pressure was 500 Pa or more. Note that an airtight member (seal member) such as an O-ring 120 may be inserted between the electrostatic chuck 107 and the element forming substrate 101 in order to maintain airtightness. In addition, the type of the gas 2 is not particularly limited, but a gas having a large thermal conductivity, being safe, having little effect on the environment, and being easy to handle is suitable, and helium (He) is particularly suitable for this condition. .
[0058]
1 and 2, the gas 2 is introduced by providing a gas introduction path in the electrostatic chuck 107, but may be introduced through a groove 109 formed on the surface of the electrostatic chuck 107. In that case, since it is not necessary to make a hole in the electrostatic chuck 107, a conductive member (electrode) can be laid over a large area over the entire surface, and a reduction in the attraction force by the electrostatic chuck 107 can be suppressed. Further, since the manufacturing process of the electrostatic chuck 107 can be simplified, the manufacturing cost can be reduced.
[0059]
1 and 2, when the temperature control means 113 is provided, it is preferable that the thermal expansion coefficients of the temperature control means 113 and the electrostatic chuck 107 are set to be substantially the same. This is because when the temperature of the temperature control unit 113 and the electrostatic chuck 107 rises, the stress inside the temperature control unit 113 and the electrostatic chuck 107 is suppressed due to the difference in thermal expansion. When the temperature control means 113 is a metal or a composite material containing a metal and the electrostatic chuck 107 is made of ceramics, the allowable stress of the ceramics is small, so that the electrostatic chuck 107 may be damaged. The size of the electrostatic chuck 107 is approximately 0.1 m. ² It was confirmed by experiments that the electrostatic chuck 107 was not damaged if the difference between the thermal expansion coefficients of the temperature control means 113 and the electrostatic chuck 107 was within 30%. Therefore, it is preferable that the difference in the coefficient of thermal expansion between the temperature control unit 113 and the electrostatic chuck 107 be within 30%.
[0060]
All the units of the substrate 101 are arranged in a space surrounded by the container 102 and the first main surface of the substrate 101. However, on the first main surface exposed to the outside of the space, a part of each wiring formed on the substrate 101 so as to be connected to each unit is exposed. A connecting means (terminal) 116 is brought into electrical contact with a part of each exposed wiring. Then, a desired electric signal (potential) is supplied from the signal generator (power supply) 117 to a pair of electrodes constituting each unit via the connection means 116. The connection means (terminal) 116 includes a means using a probe pin, a means using a flexible cable, and the like, but is not particularly limited as long as it can be electrically connected.
[0061]
Means for adsorbing the substrate 101 is provided inside the container 102.
[0062]
Examples of the suction means include electrostatic suction and vacuum suction.
[0063]
When using electrostatic attraction, the device configuration on the container side becomes complicated, and at the time of attraction, there is a possibility that an induced current may flow through the wiring to the element after the activation step, and the element may be destroyed. is there.
[0064]
On the other hand, when vacuum suction is used, when the first main surface side of the substrate is evacuated, atmospheric pressure acts on the second main surface side of the substrate. Destroyed.
[0065]
Therefore, it is preferable to peel off the substrate from the support and to give the substrate a minimum required attraction force to lift the substrate.
[0066]
In particular, after the activation step, if the adhesion remains between the second main surface of the substrate and the support due to the above-described sealing material, the first main surface of the substrate is opposed to the region. Is preferably vacuum-adsorbed.
[0067]
The area of vacuum suction by the container is formed by pressing a sealing material such as an O-ring against the first main surface of the substrate.
[0068]
The substrate peeled off from the support by the suction means of the container is thereafter carried out of the manufacturing apparatus. If the contact area between the sealing material and the first main surface of the substrate at this time is too large or a highly sticky sealing material is used, the substrate may stick to the container and the substrate may not be collected from the manufacturing apparatus. It is preferable that the sealing material used for the suction means of the container has a shape having low adhesiveness to the substrate (mainly glass) and a small contact area with the substrate surface.
[0069]
For example, an O-ring having a diameter of 2 to 3 mm formed of a material such as silicone is used.
[0070]
Next, an example of a method for manufacturing an electron source and an image display device using the manufacturing apparatus of the present embodiment shown in FIG. 1 will be described. First, the substrate 101 is placed on the support 114 with a sufficient space between the container 102 and the support 114. Next, the valve V3 is closed, the valve V4 is opened, and the inside of the groove 109 is evacuated to 100 Pa or less by the suction and exhaust system 115, and the substrate 101 is vacuum-adsorbed on the surface of the electrostatic chuck 107. At this time, the conductor arranged on the second main surface of substrate 101 is electrically grounded.
[0071]
Next, a voltage of 100 V or more and 10 kV or less, preferably 500 V or more and 2 kV or less is supplied from the power supply 110 between the ground and the electrode 108. Accordingly, an electrostatic force is generated between the electrode (conductive member) and the second main surface (conductor) of the substrate 101, and the substrate 101 can be fixed to the support 114. Then, the valve V4 is closed and the valve V3 is opened, gas 2 such as He is supplied, and the pressure in the groove 109 is maintained at a pressure at which the substrate 101 does not come off.
[0072]
At this time, a groove in which the O-ring 120 is arranged is formed on the support surrounding the electrostatic chuck, and the atmosphere of the gas supplied between the support and the second main surface of the substrate affects the outside air. It is kept stable without being affected.
[0073]
Next, the container 102 is moved toward the support 114, and the first main surface of the substrate 101 and the container 102 are hermetically bonded via the O-ring 103, which is an airtight member.
[0074]
The inside of the container 102 is inside the O-ring 103, and another O-ring 121 is provided concentrically with the inside of the O-ring 103.
[0075]
At this time, the container 102 covers a part of the first main surface of the substrate 101, and all units of the substrate 101 are formed by the container 102 inside the O-ring 121 and the first main surface. Confined in the space where
[0076]
However, a part (end) of the wiring connected to each unit is not arranged in the space formed by the container 102 and the first main surface. That is, a part (end) of each wiring connected to each unit is exposed to the atmosphere.
[0077]
The space between the O-ring 121 and the O-ring 103 can be evacuated by a sub-evacuation system 122 different from the main evacuation system 106.
[0078]
At this time, the O-ring 120 is arranged on the second main surface side opposite to the position between the O-ring 103 and the O-ring 121 in contact with the first main surface side of the substrate.
[0079]
Next, a vacuum-tight space formed by the first main surface of the substrate 101 and the container 102 is evacuated to a desired atmosphere (for example, a pressure of 1 × 10 ^-4 (Pa or less).
[0080]
Further, the space between the O-ring 103 and the O-ring 121 is evacuated to a desired atmosphere by the sub-evacuation system 122.
[0081]
If necessary, cooling water is supplied to the cooling unit 112 and / or heated by the heating unit 111, and the temperature of the substrate 101 is controlled to a desired temperature by the temperature control unit 113 with high uniformity.
[0082]
Next, a forming step is performed. In the forming step, the connection means (terminal) 116 is electrically connected to a part (end) of the wiring exposed to the atmosphere, and a signal generator (power supply) 117 supplies a voltage necessary for the forming step to each unit. This is done by supplying Thereby, a current flows through the conductive film constituting each unit, and a gap is formed in a part of the conductive film.
[0083]
In the forming step, when a conductive oxide is used as the conductive film constituting each unit, the valve V4 is opened to reduce the power required for forming, and a reducing gas is used as the gas 1. For example, it is preferable to perform a forming step by introducing a gas containing hydrogen into the space.
[0084]
If the temperature control means 113 is used as described above, the heat generated by the current flowing through the wiring connecting each unit at the time of this forming is efficiently controlled by the temperature control means 113 via the electrostatic chuck 107. 101 is maintained at a desired temperature with high uniformity, and can perform good forming.
[0085]
Then, the valve V4 is closed, and the pressure formed in the space formed by the element forming substrate 101 and the vacuum chamber 102 is reduced to 1 × 10 ^-4 Evacuate until the pressure becomes Pa or less.
[0086]
Next, an activation step is performed. When the temperature control means 113 is used, before the activation step, the temperature of the substrate 101 is controlled by the temperature control means 113 to a temperature suitable for activation (for example, between room temperature and about 120 ° C.). Then, the valve V1 is opened, and a gas of the carbon compound is introduced into the space formed by the container 102 and the substrate 101. The introduction of this gas is performed while measuring the pressure with the ionization vacuum gauge 105, if necessary. The pressure of the carbon compound gas to be introduced depends on the carbon compound to be introduced. ^-3 ~ 1 × 10 ^-5 It is performed at Pa. As the carbon compound, for example, an organic substance such as benzonitrile, trinitrile, and acetone is used.
[0087]
Then, in a state where the pressure in the space has reached a desired pressure, an activation step is performed in the same manner as in the forming step. Specifically, in the activation step, the connection means (terminal) 116 is electrically connected to a part (end) of the wiring exposed to the atmosphere, and the activation step is performed by a signal generator (power supply) 117. Is supplied to each unit. By this activation step, a carbon film is formed in the gap formed by the forming step, and each unit becomes an electron-emitting device.
[0088]
When the temperature control means 113 is used, the heat generated by the current flowing through the wiring at the time of the activation step can be controlled by the temperature control means 113 in the activation step as in the forming step. Therefore, the first main surface of the substrate 101 is maintained at a desired temperature with high uniformity, and an electron-emitting device having good characteristics can be formed with high uniformity.
[0089]
Through the above steps, an electron source having a plurality of electron-emitting devices and a wiring connected to the electron-emitting devices is formed. In the present embodiment, the forming step and the activation step are performed by the same manufacturing apparatus. However, the apparatus having this configuration may be used exclusively for each step.
[0090]
After completion of the activation step, the organic matter is sufficiently exhausted by the main vacuum exhaust system 106, and the inert gas such as N2 gas is increased only in the space formed between the inside of the O-ring 121 of the container and the first main surface of the substrate. Introduce to atmospheric pressure.
[0091]
Next, the power supply 110 is set to 0 V to release the electrostatic chuck by the electrostatic chuck, and then an appropriate gas is introduced to bring the pressure between the support and the second main surface of the substrate to atmospheric pressure.
[0092]
As a result, only the space between the O-ring 103 and the O-ring 121 of the container is evacuated, and the substrate has a suction force on the substrate at a position corresponding to this space.
[0093]
In this state, the substrate is separated from the support by moving the container 102 away from the support.
[0094]
In the region sandwiched between the two O-rings, a region is set in which the substrate is not broken by the attraction force and the substrate can be separated and held from the support.
[0095]
Thereafter, the evacuation between the O-ring 103 and the O-ring 121 is interrupted, an inert gas such as N2 gas is introduced to the atmospheric pressure, the adsorption force of the container is released, and the substrate is carried out of the manufacturing apparatus.
[0096]
Next, a face plate coated with a phosphor on the inside, an exhaust pipe made of a glass tube, a support frame provided with a getter mainly containing Ba, and a substrate on which the electron source is formed are attached to each joint. The frit glass is temporarily fixed opposite to each other so as to sandwich the frit glass, and fired in a heating furnace in an inert gas atmosphere within a range of 400 ° C. to 480 ° C. to produce a vacuum-tight envelope.
[0097]
Next, an exhaust pipe made of the above-mentioned glass tube is connected to an oil-free vacuum exhaust device, and the inside of the envelope is evacuated while maintaining the inside of the envelope at a temperature of about 80 ° C. to 250 ° C. . Thereafter, the exhaust pipe is chipped off by a burner or the like, and further, the getter is flashed by high frequency heating to form a Ba film, and the vacuum in the envelope after the chip off is maintained. Thus, the image display device is manufactured.
[0098]
Since the manufacturing apparatus of the present invention has a means for adsorbing and holding the substrate in the container, this means can be used not only for separation from the support, but also as a transfer means when loading / unloading the substrate into / from the manufacturing apparatus for the electron source. Can also be used.
For example, when a new substrate is loaded by a substrate transport device for loading / unloading a substrate to / from an electron source manufacturing apparatus, it is also used as a means for temporarily holding and retracting the substrate after the activation step in a container by suction. it can. With such a mechanism, the operation of the substrate transport device is reduced, and the process time can be reduced.
[0099]
Hereinafter, the present invention will be described more specifically.
[0100]
(Example 1)
In the present embodiment, an example in which a large number of pairs of electrodes constituting each of the surface conduction electron-emitting devices are arranged on a substrate in order to produce an electron source having a large number of surface conduction electron-emitting devices arranged on a substrate will be described.
[0101]
First, a soda-lime glass substrate 701 having a size of 850 mm × 530 mm × thickness 2.8 mm was used as a substrate. An 80 nm-thick ITO film was formed on the entire back surface of the glass substrate 701 by electron beam evaporation. This film is for an electrode for electrostatic attraction. On the surface of the glass substrate 701, finally, the surface conduction electron-emitting device and the wiring shown in FIGS. 3 and 4A and 4B are formed. FIGS. 4A and 4B are diagrams showing the structure of the surface conduction electron-emitting device 600 in more detail. FIG. 4B is a sectional view taken along line BB ′ of FIG.
[0102]
3 and 4A and 4B, 600 is a surface conduction electron-emitting device, 601 is a lower wiring, 602 is an upper wiring, and 603 is an interlayer insulating film that electrically insulates the lower wiring 601 and the upper wiring 602. , 705 and 706 are device electrodes, 707 is a conductive film, 708 is an electron-emitting portion, and 709 is a film made of a conductor. Other members having the same reference numerals as the members shown in the previous figures indicate the same members.
[0103]
First, Pt was deposited to a thickness of 50 nm on the surface of the glass substrate 701 for the device electrodes 705 and 706 by electron beam evaporation. Further, a resist is applied on platinum, and the resist is exposed to light by an exposing machine and developed, thereby obtaining the same pattern as that of the device electrodes 705 and 706 of W = 0.2 mm and L = 8 μm shown in FIG. 2340 × 480 pairs of resist pairs having the following pattern were formed.
[0104]
Next, after performing an etching process with Ar gas plasma, the resist was removed to form device electrodes 705 and 706 patterns made of Pt.
[0105]
Ag paste ink was printed and baked (baking temperature: 550 ° C.) by screen printing on the glass substrate 701 on which the element electrode pairs 705 and 706 were formed as the lower wiring 601 to produce 2230 pieces. Next, an insulating glass paste is printed and fired (a firing temperature of 550 ° C.) as a protective film on the interlayer insulating film 603 and a part of the lower wiring 601 to which Ba as a getter material is attached. Further, Ag paste ink was printed as the upper wiring 602, and baked (firing temperature: 550 ° C.) to form 480 wires. The lower wiring 601 and the upper wiring 602 have their ends formed at a distance of 3 mm from the outer periphery of the glass substrate 701 so that the connection means (terminal) 116 can be connected outside the container 102 (in the atmosphere). I made it.
[0106]
Next, a palladium complex solution was applied using a bubble jet (registered trademark) type droplet discharging apparatus so as to connect the element electrodes 705 and 706. Then, by heating and baking in air, a conductive film made of palladium oxide was formed. As described above, the substrate 101 on which the plurality of units each including the pair of electrodes and the conductive film before the formation of the electron-emitting portion and the wiring connected to each of the units were formed. At this time, when measured, the substrate 101 was warped concavely by about 0.5 mm at the peripheral portion with respect to the center.
[0107]
In the manufacturing apparatus shown in FIG. 1, six electrostatic chucks 107 made of alumina, each having a size of 200 mm × 300 mm × thickness 10 mm and a printed electrode made of silver embedded as the electrode 108, were used as the electrostatic chuck 107. Further, each electrostatic chuck 107 was fixed to the temperature control means 113 so that the gap with the substrate 101 was narrowed. The temperature control means 113 is made of a copper-tungsten alloy, has a size of 900 mm × 600 mm × 80 mm, has a 20 kW electric heater as the heating unit 511, and has a cooling water passage as the cooling unit 512. Further, a mechanism is provided that can electrically ground the film 709 made of a conductor on the back surface (second main surface) of the substrate 101 to the ground by a contact pin (not shown) for electrically grounding the film. The upper surface of the support body 114 is formed of a Ti frame-shaped metal plate so as to surround the six electrostatic chucks and the six electrostatic chucks. Adjusted height.
[0108]
In addition, a groove for embedding an O-ring was provided on the upper surface of the Ti metal plate so as to surround the six electrostatic chucks, and the O-ring 120 was disposed therein.
[0109]
Further, as the connection means (terminal) 116, a probe unit constituted by a plurality of probe pins was used.
[0110]
The inside of the container 102 has a double structure consisting of an inner container and an outer container, and two concentric O-rings 103 and 121 are arranged at respective boundaries.
[0111]
In the manufacturing apparatus shown in FIG. 1, the container 102 is raised, and the substrate 101 is placed on the support 114. Next, the valve V3 was closed, the valve V4 was opened, and the inside of the groove 109 was evacuated to 100 Pa or less by the suction and exhaust system 115, and the substrate 101 was vacuum-adsorbed to the electrostatic chuck 107. At this time, the back surface (second main surface) of the substrate 101 was electrically grounded to ground by a contact pin (not shown).
[0112]
Next, a DC voltage of 1.2 kV was supplied from the power supply 110 between the ground and the electrode 108 to generate an electrostatic force, and the substrate 101 was electrostatically attracted to the electrostatic chuck 107 and fixed to the support 114. Next, the valve V4 was closed, the valve V3 was opened, and He was supplied as gas 2 to the groove 108, and the pressure in the groove was maintained at 3000 Pa.
[0113]
Next, the container 102 was lowered and brought into contact with the substrate 101 via the O-ring 120 to cover a part of the first main surface of the substrate 101. The inner container was arranged so as to cover all of a plurality of units composed of a pair of electrodes and a conductive film on the substrate 101. Subsequently, a space (hereinafter, referred to as an internal space) formed by the inner container and the first main surface of the substrate 101 has a pressure of 1 × 10 ^-4 Evacuation was performed until the pressure became Pa or less. Further, a sub-evacuating system 122 pressurizes a space formed by the outer and inner containers and the first main surface of the substrate 101 (hereinafter referred to as an outer space) with a pressure of 1 × 10 ^-2 Evacuation was performed until the pressure became Pa or less.
[0114]
On the other hand, cooling water at 20 ° C. was flowed through the cooling unit 112, heated by the heating unit 111, and the temperature of the substrate 101 was controlled / held at 50 ° C. with high uniformity by the temperature control means.
[0115]
Next, a forming step was performed. A probe unit, which is a connecting means (terminal) 116, is electrically connected to the ends of the wirings 601 and 602 exposed to the atmosphere, and a signal generator (power supply) 117 supplies a pulse voltage as a rectangular wave having a peak value of 11V. Was supplied to each unit. Simultaneously with the application of the pulse voltage, the valve V2 was opened, the evacuation by the main evacuation system 106 was stopped, and a mixed gas of nitrogen and hydrogen was introduced as gas 1 into the internal space. By this step, a gap was formed in a part of the conductive film constituting each unit. At the same time, the conductive film was reduced from palladium oxide to palladium.
[0116]
Thereafter, the application of the pulse voltage was terminated, and the forming step was terminated. During the forming process, the heat generated by the current flowing through the wiring was efficiently controlled by the temperature control means through the electrostatic chuck 107. As a result, the substrate 101 was maintained at a desired temperature with high uniformity, and favorable forming was performed. In addition, no crack was generated on the substrate 101. Next, the valve V4 is closed, and the pressure in the internal space is reduced to 1 × 10 ^-4 Evacuation was performed until the pressure became Pa or less.
[0117]
Next, an activation step was performed. At the time of this activation, the temperature of the substrate 101 was kept constant at 60 ° C. by the temperature control means. Next, the valve V1 is opened to introduce tolunitrile as a carbon compound 104 into the internal space, and while measuring the pressure with the ionization vacuum gauge 105, the pressure becomes 2 × 10 ^-4 The valve V1 was adjusted to Pa. Next, a pulse voltage was simultaneously supplied from the signal generator (power supply) 117 to the upper wiring 602 every ten lines, and a voltage was applied to each unit. Conventionally, on the surface of the substrate 101, the deposition of the carbon film due to the activation process varied due to the Joule heat caused by the current flowing through the wiring, whereas in the electron source of the present embodiment, the deposition of the carbon film was uniform. This was performed at a high level, and as a result, the electron emission characteristics were excellent in uniformity.
[0118]
After the activation step, the valve V1 is closed, and the internal space is reduced to 1 × 10 ^-4 Evacuation was performed until the pressure became Pa or less.
[0119]
The probe unit electrically connected to the ends of the wirings 601 and 602 exposed to the atmosphere was retracted from the substrate.
[0120]
Next, the evacuation by the main evacuation system 106 was stopped, and nitrogen gas was introduced until the pressure in the internal space reached atmospheric pressure. At this time, the evacuation in the external space is continued by the sub evacuation system 122, and the pressure is 1 × 10 ^-1 Pa or less.
[0121]
The voltage of the power supply 110 was reduced to 0 V and held for 10 minutes to remove the electrostatic force by the electrostatic chuck.
[0122]
Next, the valve V2 was closed and the valve V3 was opened, He gas was supplied to the groove 109, and the pressure in the groove was maintained at atmospheric pressure.
[0123]
Finally, the container was moved upward with respect to the support, and the substrate on the support was peeled from the support.
[0124]
Thereafter, the evacuation in the sub-vacuum evacuation system 122 is stopped, the pressure in the external space is raised to atmospheric pressure by a gas introduction system (not shown), the suction and holding of the substrate by the container are stopped, and the substrate is removed from the electron source manufacturing apparatus. Collected.
[0125]
Next, a plurality of spacers having an anti-atmospheric pressure structure were provided on the upper wiring 602 of the substrate 101 having an electron source on which a large number of electron-emitting devices were formed, which was formed through the forming step and the activation step. . On the other hand, a phosphor was applied to the inside of the face plate, and an exhaust pipe made of glass was installed in communication therewith. The substrate 101 and the face plate are temporarily fixed to face each other with a support frame provided with a getter containing Ba as a main component and a frit glass in a heating furnace in an inert gas atmosphere at a temperature of 420 ° C. To produce a vacuum-tight envelope.
[0126]
Next, the exhaust pipe was connected to an oil-free vacuum exhaust device, and the inside of the envelope was evacuated while maintaining the envelope at 300 ° C. Thereafter, the exhaust pipe was chipped off with a burner or the like, and further, the getter was flashed by high-frequency heating to form a Ba film, thereby manufacturing an image display device.
[0127]
The image display device manufactured in this manner has a smaller luminance distribution than that of the conventional example, and a high-luminance display image can be obtained over a long period of time.
[0128]
(Example 2)
In the same manner as in Example 1, a substrate 101 was manufactured in which a plurality of units each including a pair of electrodes and a conductive film before forming an electron-emitting portion and wirings connected to each of the units were formed.
[0129]
This substrate was subjected to the forming step and the activation step in the same manner as in Example 1 by using the electron source manufacturing apparatus having the configuration shown in FIG.
[0130]
The container 201 of the apparatus for manufacturing an electron source shown in FIG. 2 has a built-in holding plate 202 for peeling a substrate from a support inside the container. The holding plate 202 has a mechanism that can move up and down inside the container.
[0131]
The substrate 101 was fixed on a support in the same manner as in Example 1, and the container 201 was moved in the direction of the support to cover a part of the first main surface of the substrate 101. At this time, an interval of 100 mm was provided between the holding plate inside the container and the first main surface of the substrate.
[0132]
Thereafter, the steps from the forming step to the activation step were performed in the same manner as in the first embodiment.
[0133]
After the activation step, the holding plate driving system 203 was moved while the inside of the container was evacuated to vacuum, and the holding plate 202 inside the container was pressed against the first main surface of the substrate 101. The area against which the holding plate 202 was pressed pressed about 80% of the first main surface of the substrate covered with the container.
[0134]
In this state, the electrostatic force of the electrostatic chuck was removed, and a gas was introduced between the support and the substrate so that the pressure became atmospheric. The substrate was vacuum-adsorbed to the container 201, but was not broken by stress because the substrate was supported by the holding plate.
[0135]
Next, the container 201 was moved in a direction away from the support, and the substrate was separated from the support.
[0136]
The movement was performed so that the surface of the O-ring on the outer periphery of the container and the surface of the holding plate became the same surface.
[0137]
Thereafter, gas was introduced into the container to stop the substrate from being sucked and held by the container, and the substrate was recovered from the electron source manufacturing apparatus.
[0138]
Thereafter, an image display device was created in the same manner as in Example 1.
[0139]
【The invention's effect】
According to the present invention, by partially covering the first main surface of the substrate with the container, the electrical connection between the power supply and the wiring in the electrical processing (forming or activation) can be easily performed in the atmosphere. It can be carried out. Further, since the degree of freedom in designing the size and shape of the container is increased, the introduction of gas into the container and the discharge of gas out of the container can be performed in a short time. The reproducibility and uniformity of the electron emission characteristics of the electron source to be used can be improved. As a result, an excellent display image with high uniformity can be obtained even in an image display device using the electron source.
[0140]
In the present invention, when the substrate adsorbed on the support is separated from the support after the activation step, the forming and the activation steps are performed even if there is a suction force and an adhesive force remaining on the support and the substrate. Thus, the substrate can be adsorbed by the container used in the step (1), and the substrate can be peeled from the support without being damaged even if the substrate has a large area.
[0141]
In particular, in the case of the manufacturing apparatus of the present invention, the substrate is opposed to the position of the seal member via the substrate in order to peel the substrate from the support member against the adhesive force of the seal member between the support and the back surface of the substrate. By performing the vacuum suction only at the position, the substrate can be efficiently and safely separated from the support, and the effect of improving the yield of manufacturing the electron source is obtained.
[Brief description of the drawings]
FIG. 1 is a schematic diagram showing a manufacturing apparatus.
FIG. 2 is a schematic diagram showing a manufacturing apparatus.
FIG. 3 is a schematic diagram showing an electron source and wiring on a rear plate.
FIG. 4 is an enlarged schematic view showing a structure of a surface conduction electron-emitting device.
[Explanation of symbols]
101 substrate
102, 201 containers
107 Electrostatic chuck
114 Support
600 Surface conduction electron-emitting device
705, 706 Device electrode

Claims (14)

A support for supporting the substrate on which the conductor is formed, having a gas inlet and a gas outlet, covering a partial area of the substrate surface, and a container capable of holding the substrate by suction, Connected to a gas inlet, means for introducing a gas into the container, connected to an outlet for the gas, means for evacuating the container, means for applying a voltage to the conductor, An apparatus for manufacturing an electron source, comprising: 2. The apparatus for manufacturing an electron source according to claim 1, wherein said container has means for evacuating a part of a substrate surface area covered by said container. 3. The apparatus according to claim 2, wherein the area to be evacuated is one continuous area. 4. The apparatus for manufacturing an electron source according to claim 3, wherein the region to be evacuated is a region other than a region surrounded by one closed curve in the substrate surface region covered by the container. The apparatus for manufacturing an electron source according to any one of claims 1 to 4, further comprising means for fixing the substrate to the support. The apparatus for manufacturing an electron source according to any one of claims 1 to 5, wherein the means for fixing the substrate to the support is an electrostatic chuck. The apparatus for manufacturing an electron source according to claim 1, further comprising: providing a sealing material between the support and the substrate; and introducing a gas into the sealing material. 8. The device according to claim 1, wherein a means for holding and holding the support by the container is disposed at a position facing the sealant between the support and the substrate via the substrate. 9. Electron source manufacturing equipment. A method for manufacturing an electron source including a plurality of electron-emitting devices, comprising: a first main surface and a second main surface facing the first main surface, wherein the first main surface has A plurality of units including a pair of electrodes and a conductive film disposed between the pair of electrodes, and a step of fixing a substrate on which a wiring connecting the plurality of units is disposed on a support,
By covering a part of the first main surface of the substrate with a container, the plurality of units are arranged in a space formed by the first main surface of the substrate and the container, and the unit is provided outside the space. Arranging a part of the wiring;
Applying a voltage to the plurality of units through a part of the wiring outside the space in a state where the inside of the space is in a desired atmosphere; and adsorbing and holding a part of the first main surface of the substrate by a container. And a step of peeling the substrate from a support. The method according to claim 9, wherein the step of setting the inside of the space to a desired atmosphere includes the step of exhausting the inside of the space. The method according to claim 9, wherein the step of setting the inside of the space to a desired atmosphere includes a step of introducing a gas into the space. The method according to claim 9, wherein the step of fixing the substrate on the support further includes a step of vacuum-sucking the substrate and the support. Method. 13. The electron source according to claim 9, wherein the step of fixing the substrate on the support further includes a step of electrostatically adsorbing the substrate and the support. Production method. The step of adsorbing and holding a part of the first main surface of the substrate by a container and peeling the substrate from the support may be performed after removing a force for fixing the substrate on the support. The method for manufacturing an electron source according to any one of claims 9 to 13, wherein:

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