TWI449658B - Method for making 3-d nano-structured array - Google Patents

Description

Method for preparing three-dimensional nanostructure array

The invention relates to a preparation method of a nano material, in particular to a preparation method of a three-dimensional nano structure array.

Since its inception, nanomaterials have been sought after by the scientific community and become the most active research field in materials science today. Nano materials have great potential for development in the electronics industry, biomedicine, environmental protection, optics, etc. according to different sizes and properties. While applying nanomaterials to various industries, the research on the preparation methods and properties of nanomaterials is also the focus of international attention and exploration.

Nanomaterials are classified into four categories: zero-dimensional, one-dimensional, two-dimensional, and three-dimensional nanomaterials. If the scale of a nanomaterial is limited in the three-dimensional space of X, Y and Z, it is called zero-dimensional, such as nanoparticle; if the material is limited only in the two spatial directions, it is called one-dimensional, such as nanowire And nanotubes; if the system is limited in a spatial direction, it is called a two-dimensional nanomaterial, such as graphene; if it is not limited in the three directions of X, Y and Z, but the components of the material are Nanopores, nanoparticles or nanowires are called three-dimensional nanostructured materials.

Nanomaterials as an emerging material, the biggest problem at present is how to prepare bulk, uniform and pure micro-materials, so as to further study the actual properties and mechanisms of such materials. From the current research situation, among the many nanomaterials, one-dimensional carbon nanotubes and two-dimensional graphene materials have the highest research heat, while the three-dimensional nanostructures report ratio Less, usually a three-dimensional nanostructure with a simple structure such as a nanosphere or a nanocolumn.

In view of this, it is necessary to provide a method for preparing a three-dimensional nanostructure array having a complicated structure.

A method for preparing a three-dimensional nanostructure array, comprising the steps of: providing a substrate; forming a mask layer on a surface of the substrate; etching the substrate with a reactive etching atmosphere while cutting the mask layer to form a ladder a three-dimensional array of nanostructures; and a mask layer.

A method for preparing a three-dimensional nanostructure array, comprising the steps of: providing a substrate; performing hydrophilic treatment on the substrate; forming a single layer of nanospheres as a mask layer on the surface of the substrate; and etching the substrate by using a reactive etching atmosphere At the same time, the mask layer is cut to form a three-dimensional nanostructure array with a stepped structure; and the mask layer is removed.

Compared with the prior art, the present invention can prepare a three-dimensional nanostructure array of a stepped structure by a combination of a mask layer and a reactive etching atmosphere etching, and the method is simple in process and low in cost.

10,20,30,40‧‧‧Three-dimensional nanostructure array

100,200,300,400‧‧‧Base

102,202,302,402‧‧‧Three-dimensional nanostructure

104,204,304‧‧‧First round table

106,206,306‧‧‧Second round table

108‧‧‧ mask layer

110‧‧‧Reactive etching atmosphere

308‧‧‧ Third round table

404‧‧‧First round table space

406‧‧‧Second round table space

1 is a schematic structural view of a three-dimensional nanostructure array according to a first embodiment of the present invention.

2 is a cross-sectional view of the three-dimensional nanostructure array of FIG. 1 taken along line II-II.

FIG. 3 is a schematic structural diagram of a three-dimensional nanostructure array including a plurality of patterns according to a first embodiment of the present invention.

4 is a method for preparing a three-dimensional nanostructure array according to a first embodiment of the present invention; Flow chart.

Figure 5 is a scanning electron micrograph of a single layer of nanospheres arranged in a hexagonal close-packed surface on the surface of the substrate.

Figure 6 is a scanning electron micrograph of a single layer of nanospheres arranged in an equidistant arrangement on the surface of the substrate.

Figure 7 is a scanning electron micrograph of a three-dimensional nanostructure array prepared in accordance with a first embodiment of the present invention.

FIG. 8 is a schematic structural diagram of a three-dimensional nanostructure array according to a second embodiment of the present invention.

FIG. 9 is a schematic structural view of a three-dimensional nanostructure array according to a third embodiment of the present invention.

FIG. 10 is a schematic structural diagram of a three-dimensional nanostructure array according to a fourth embodiment of the present invention.

The three-dimensional nanostructure array of the embodiment of the present invention and a preparation method thereof will be described in detail below with reference to the accompanying drawings.

Referring to FIG. 1 and FIG. 2 , the three-dimensional nanostructure array 10 according to the first embodiment of the present invention includes a substrate 100 and a plurality of three-dimensional nanostructures 102 disposed on at least one surface of the substrate 100 . The three-dimensional nanostructure 102 is a stepped structure.

The substrate 100 can be a germanium based substrate or a semiconductor substrate. Specifically, the material of the substrate 100 may be tantalum, cerium oxide, tantalum nitride, quartz, glass, gallium nitride, gallium arsenide, sapphire, aluminum oxide or magnesium oxide. Preferably, the substrate 100 is half Conductor layer. The size, thickness and shape of the substrate 100 are not limited and can be selected according to actual needs. In this embodiment, the substrate 100 is a sapphire substrate having a gallium nitride semiconductor layer formed on its surface, and the substrate 100 is cut into a square having a length of 2 cm.

The three-dimensional nanostructure 102 is a stepped convex structure or a stepped concave structure provided on the surface of the substrate 100. The stepped raised structure is an entity of a stepped protrusion extending outward from the surface of the substrate 100. The stepped recessed structure is a space of a stepped recess formed by recessing from the surface of the substrate 100 into the substrate 100. The stepped protrusion structure or the stepped recess structure may be a plurality of layered structures, such as a plurality of layers of triangular prisms, a plurality of layers of quadrangular prisms, a plurality of layers of hexagonal prisms or a plurality of layers of circular tables. Preferably, the stepped protrusion structure or the stepped recess structure is a plurality of layered truncated cone structures. The stepped recessed structure is a plurality of layers of the truncated cone structure, and the space of the stepped recess is a plurality of truncated cone shapes. The maximum dimension of the stepped convex structure or the stepped concave structure is 1000 nm or less, that is, the length, the width and the height are less than or equal to 1000 nm. Preferably, the stepped protrusion structure or the stepped recess structure has a length, a width and a height ranging from 10 nm to 500 nm.

In this embodiment, the three-dimensional nanostructures 102 are disposed on the surface of the gallium nitride semiconductor layer of the substrate 100. The three-dimensional nanostructure 102 is a double-layered truncated cone structure with a stepped protrusion. Specifically, the three-dimensional nanostructure 102 includes a first circular table 104 and a second circular table 106 disposed on the surface of the first circular table 104. The first truncated cone 104 is disposed adjacent to the substrate 100. The side of the first truncated cone 104 is perpendicular to the surface of the substrate 100. The side of the second truncated cone 106 is perpendicular to the bottom surface of the first truncated cone 104. The first circular table 104 and the second circular table 106 form a stepped convex structure, and the second circular table 106 is disposed within the range of the first circular table 104. Preferably, the first round table 104 and the first The two circular tables 106 are coaxially arranged. The first circular table 104 and the second circular table 106 are of a unitary structure, that is, the second circular table 106 is a truncated cone structure extending from the top surface of the first circular table 104.

The diameter of the bottom surface of the first circular table 104 is larger than the diameter of the bottom surface of the second circular table 106. The bottom surface of the first truncated cone 104 has a diameter of 30 nm to 1000 nm and a height of 50 nm to 1000 nm. Preferably, the bottom surface of the first truncated cone 104 has a diameter of 50 nm to 200 nm and a height of 100 nm to 500 nm. The bottom surface of the second truncated cone 106 has a diameter of 10 nm to 500 nm and a height of 20 nm to 500 nm. Preferably, the bottom surface of the second truncated cone 106 has a diameter of 20 nm to 200 nm and a height of 100 nm to 300 nm. In this embodiment, the first circular table 104 and the second circular table 106 are coaxially disposed. The bottom surface of the first truncated cone 104 has a diameter of 380 nm and a height of 105 nm. The bottom surface of the second truncated cone 106 has a diameter of 280 nm and a height of 55 nm.

The material of the three-dimensional nanostructure 102 or the material defining the three-dimensional nanostructure 102 may be the same as the material of the substrate 100 to form a unitary structure or different from the material of the substrate 100. The plurality of three-dimensional nanostructures 102 are disposed in an array on the surface of the substrate 100. The array form arrangement means that the plurality of three-dimensional nanostructures 102 can be arranged in an equidistant determinant arrangement, a concentric annular arrangement or a hexagonal dense arrangement. Moreover, the three-dimensional nanostructures 102 arranged in an array may form a single pattern or a plurality of patterns. The single pattern may be a triangle, a parallelogram, a body, a diamond, a square, a rectangle, or a circle. As shown in FIG. 3, the plurality of patterns may include a patterned array formed by a plurality of the plurality of identical or different single patterns. The distance between the two adjacent Venn structures 102 is equal, that is, the distance between the adjacent two first circular stages 104 is equal, ranging from 10 nm to 1000 nm, preferably 10 nm to 30 nm. In this embodiment, the plurality of three-dimensional nanostructures 102 are arranged in a hexagonal densely packed pattern to form a single square pattern. And the distance between two adjacent Venom structures 102 is about 30 nm.

Since the three-dimensional nanostructure 102 of the three-dimensional nanostructure array 10 of the present invention has a stepped structure, which corresponds to a three-dimensional nanostructure including at least two layers arranged in an array, the three-dimensional nanostructure array 10 has broad application prospects. The three-dimensional nanostructure array 10 can be applied to fields such as nano optics, nano-integrated circuits, and nano-integrated optics.

Referring to FIG. 4, a first embodiment of the present invention provides a method for fabricating a three-dimensional nanostructure array 10, which includes the following steps: step S10, providing a substrate 100; step S11, forming a mask layer 108 on the surface of the substrate 100; In step S12, the substrate 100 is etched by using the reactive etching atmosphere 110 while the mask layer 108 is cut to form a three-dimensional nanostructure array 10 having a stepped structure; and in step S13, the mask layer 108 is removed.

In step S10, a substrate 100 is provided.

The substrate 100 can be a germanium based substrate or a semiconductor substrate. Specifically, the material of the substrate 100 may be tantalum, cerium oxide, tantalum nitride, quartz, glass, gallium nitride, gallium arsenide, sapphire, aluminum oxide or magnesium oxide. Preferably, the substrate 100 is a semiconductor layer. The size, thickness and shape of the substrate 100 are not limited and can be selected according to actual needs.

In this embodiment, a substrate 100 is first grown on a surface of a sapphire substrate by metal organic chemical vapor deposition (MOCVD) to obtain a substrate 100, and the substrate 100 is then cut into a square having a side length of 2 cm. Further, in this embodiment, the gallium nitride semiconductor layer may be doped to form an N-type or P-type semiconductor layer.

Further, this embodiment can perform hydrophilic treatment on the substrate 100.

When the material of the substrate 100 is tantalum or niobium dioxide, first, the substrate 100 is cleaned and cleaned using a clean room standard process. Then, at a temperature of 30 ° C to 100 ° C, a volume ratio of NH ₃ ‧ H ₂ O: H ₂ O ₂ : H ₂ O = x: y: z in a bath for 30 minutes to 60 minutes, for hydrophilic treatment, Rinse twice with deionized water for 2 to 3 times. Among them, the value of x is 0.2~2, the value of y is 0.2~2, and the value of z is 1~20. Finally, it was blown dry with nitrogen.

In this embodiment, the material of the substrate 100 is gallium nitride, and the method for performing the hydrophilic treatment on the substrate 100 includes the following steps: First, the substrate 100 is cleaned and cleaned by a standard process using a clean room. The substrate 100 is then treated with microwave plasma. Specifically, the substrate 100 can be placed in a microwave plasma system, and one of the microwave plasma systems can generate an oxygen plasma, a chlorine plasma, or an argon plasma. The plasma diffuses from the generation region and drifts to the surface of the substrate 100 at a lower ion energy, thereby improving the hydrophilicity of the substrate 100.

When the above substrate 100 is treated with oxygen plasma, the power of the oxygen plasma system is 10 watts to 150 watts, and the rate of oxygen plasma is 10 standard milli cents per minute (sccm). 20 standard conditions per minute, the formation of the pressure is 2 Pa ~ 3 Pa, oxygen treatment time is 1 second ~ 30 seconds, preferably 5 seconds ~ 10 seconds. The hydrophilicity of the substrate 100 is improved by the above method.

When the above substrate 100 is treated with chlorine plasma, the power of the chlorine plasma system is 50 watts to 100 watts, and the access rate of the chlorine plasma is 10 standard milliliters per minute to 30 standard milliliters per minute, and the gas pressure is formed. 2 Pa ~ 10 Pa, using chlorine plasma etching time is 3 seconds ~ 5 seconds. The hydrophilicity of the substrate 100 is improved by the above method.

When the argon plasma is used to treat the substrate 100, the power of the argon plasma system is 50 watts to 100 watts, and the inlet rate of the argon plasma is 2 standard milliliters per minute to 10 standard milliliters per minute, and the gas pressure is formed. 2 Pa ~ 10 Pa, argon plasma etching time is 10 seconds ~ 30 seconds. through Through the above method, the hydrophilicity of the substrate 100 is improved.

Further, the substrate 100 may be subjected to a second hydrophilic treatment in the following manner: the substrate 100 after the hydrophilic treatment is immersed in a 2 wt% to 5 wt% sodium dodecyl sulfate solution (SDS) for 2 hours to 24 hours. The hour is such that the substrate 100 facilitates the subsequent process. That is, the substrate 100 after being soaked in the SDS is advantageous for spreading the subsequent nanospheres to form a large-area nanosphere in which the Great Wall is arranged in an orderly manner.

In step S11, a mask layer 108 is formed on the surface of the substrate 100.

The method of forming the mask layer 108 on the surface of the substrate 100 may be to form a single layer of nanospheres on the surface of the substrate 100 or to form a continuous film having a plurality of openings. It can be understood that, by using a single-layer nano microsphere as the mask layer 108, a stepped convex structure can be prepared at a position corresponding to the nano microsphere, and a continuous film having a plurality of openings can be used as the mask layer 108. A stepped recessed structure is prepared at a position corresponding to the opening. The continuous film having a plurality of openings can be prepared by nanoimprinting, template deposition, or the like.

In this embodiment, a single layer of nanospheres is formed on the surface of the substrate 100 as a mask layer 108, which specifically includes the following steps: Step S111, preparing a solution of nanospheres.

In this embodiment, 150 ml of pure water, 3 μl to 5 μl of 0.01 wt% of 210 wt% of nanospheres, and an equivalent of 0.1 wt% to 3 wt are sequentially added to a 15 mm diameter watch glass. After the % SDS was formed, the mixture was allowed to stand for 30 to 60 minutes. After the nanospheres are sufficiently dispersed in the mixture, 1 microliter to 3 microliters of 4% by weight of SDS is added to adjust the surface tension of the nanospheres, which is advantageous for forming a single layer of nanosphere arrays. The diameter of the nanospheres may range from 60 nm to 500 nm. Specifically, the diameter of the nanospheres may be 100 nm, 200 nm, 300 nm or 400 N. Meters, the above diameter deviation is 3 nm ~ 5 nm. Preferred nanospheres have a diameter of 200 nm or 400 nm. The nanospheres may be polymer nanospheres or nanobelt microspheres or the like. The material of the polymer nanospheres may be polystyrene (PS) or polymethyl methacrylate (PMMA). It can be understood that, depending on the actual demand, the watch glass can also be used as a surface dish having a diameter of 15 mm to 38 mm, and the mixture in the watch glass can also be proportioned according to actual needs.

In step S112, a single layer of nanosphere solution is formed on the surface of the substrate 100, and the single layer of nanospheres formed on the substrate 100 are arranged in an array.

The method of forming a single layer of nanosphere solution on the surface of the substrate 100 may be a pulling method or a spin coating method. The single-layer nano microspheres may be arranged in a hexagonal close-packed arrangement, in an equidistant arrangement, or in a concentric annular arrangement.

The method for forming a single-layer nano microsphere solution on the surface of the substrate 100 by using the pulling method comprises the following steps: first, the hydrophilically treated substrate 100 is slowly tilted and sliding along the side wall of the surface dish into the surface dish. In the mixture, the substrate 100 has an inclination angle of 9° to 15°. The substrate 100 is then slowly extracted from the mixture of watch glasses. Among them, the above-mentioned sliding down and lifting speed are relatively slow at a speed of 5 mm / hour to 10 mm / hour. In the process, the nanospheres in the solution of the nanospheres are self-assembled to form a single layer of nanospheres arranged in a hexagonal close-pack. The arrangement of the plurality of three-dimensional nanostructures 102 is related to the arrangement of the nanospheres.

In this embodiment, a single layer of nanosphere solution is formed on the surface of the substrate 100 by spin coating, which comprises the following steps: First, the substrate after the hydrophilic treatment is formed before the single layer of nanospheres are formed on the substrate 100. 100 soaked in 2 wt% sodium lauryl sulfate solution for 2 hours to 24 hours, soaked in the substrate 100 in sodium lauryl sulfate solution One surface is spin-coated with 3 microliters to 5 microliters of polystyrene. Next, spin-coat at a speed of 400 rpm to 500 rpm for 5 seconds to 30 seconds. Then, spin-coat at a speed of 800 rpm to 1000 rpm for 30 seconds to 2 minutes. Finally, the spin coating speed is increased to 1400 rpm to 1500 rpm, spin coating for 10 seconds to 20 seconds, and the excess microspheres are removed to form a single layer of nanospheres in a hexagonal close-packed arrangement on the substrate 100. .

In step S113, the substrate 100 having the nanospheres extracted in the mixture is dried to obtain a single layer of nanospheres.

In this embodiment, the diameter of the nanospheres may be 400 nm. Referring to FIG. 5, the nanospheres in the single-layer nanospheres are arranged in the lowest energy arrangement, that is, the hexagonal close-packed arrangement. The single-layer nanospheres are densely packed and have the largest duty ratio. Any three adjacent nanospheres in the single-layer nanospheres are in an equilateral triangle. Referring to Figure 6, by controlling the surface tension of the nanosphere solution, the nanospheres in the single-layer nanospheres can be arranged in an equidistant arrangement.

Further, a step of baking the pair of substrates 100 may be further included after forming a single layer of nanospheres on the surface of the substrate 100. The baking temperature is 50 ° C ~ 100 ° C, and the baking time is 1 minute ~ 5 minutes.

In step S12, the substrate 100 is etched by the reactive etching atmosphere 110 while the mask layer 108 is cut to form a three-dimensional nanostructure array 10 having a stepped structure.

The step of etching the substrate 100 using the reactive etching atmosphere 110 is performed in a microwave plasma system. The microwave plasma system is a Reaction-Ion-Etching (RIE) mode. Reactive etching atmosphere The mask layer 108 can be trimmed while the substrate 100 is being etched by 110. When the mask layer 108 is a single layer of nanospheres, the diameter of the nanospheres is reduced during etching. When the mask layer 108 is a continuous film having a plurality of openings, the opening is The diameter will become larger during the etching process. Since the reactive etching atmosphere 110 etches the substrate 100, the mask layer 108 can be cut, so that the three-dimensional nanostructure 102 having a stepped structure can be formed.

In this embodiment, the substrate 100 on which the single layer of nanospheres are formed is placed in a microwave plasma system, and one of the microwave plasma systems induces a reactive source to generate a reactive etching atmosphere 110. The reactive etching atmosphere 110 diffuses from the generation region and drifts to the surface of the single-layer nanosphere of the substrate 100 with a lower ion energy, at which time the single-layer nanosphere is etched by the reactive etching atmosphere 110. Forming smaller diameter nanospheres, that is, each nanosphere of the single layer of nanospheres is etched and cut into smaller diameter nanospheres, thereby increasing the distance between adjacent nanospheres Clearance. At the same time, the reactive etching atmosphere 110 simultaneously etches the substrate 100. Since the steps of cutting and etching are performed simultaneously, the gap between the adjacent nanospheres is increased, and the reactive etching atmosphere 110 starts to react with the substrate 100, and as the gap between the adjacent nanospheres increases, The range of etching also increases to form a stepped three-dimensional nanostructure 102.

In this embodiment, the working gas of the microwave plasma system includes chlorine gas (Cl ₂ ) and argon gas (Ar). Among them, the access rate of chlorine gas is 10 standard conditions, milliliters per minute, ~60 standard conditions, milliliters per minute, and the access rate of argon gas is 4 standard conditions, milliliters per minute, ~20 standard milliliters per minute. The working gas is formed at a gas pressure of 2 Pa to 10 Pa. The power of the plasma system is 40 watts to 70 watts. The etching time using the reactive etching atmosphere 110 is 1 minute to 2.5 minutes. Preferably, the ratio of the power of the microwave plasma system to the gas pressure of the working gas of the microwave plasma system is less than 20:1. It can be understood that, in this embodiment, the spacing between the three-dimensional nanostructures 102, that is, the minimum distance between the sides of adjacent truncated cones, can be controlled by controlling the etching time using the reactive etching atmosphere 110.

Further, other gases such as sulfur tetrafluoride (SF ₄ ), boron trichloride (BCl ₃ ) or a mixed gas thereof may be added to the reactive etching atmosphere 110 to adjust the etching rate. The flow rate of the sulfur tetrafluoride (SF ₄ ), boron trichloride (BCl ₃ ) or a mixed gas thereof may be 20 standard milliliters per minute to 40 standard milliliters per minute.

In step S13, the nanospheres are removed.

A non-toxic or low-toxic environmentally friendly solvent such as tetrahydrofuran (THF), acetone, methyl ethyl ketone, cyclohexane, n-hexane, methanol or absolute ethanol is used as a stripping agent to dissolve the nanospheres, and the nanospheres can be removed and retained on the substrate. A three-dimensional nanostructure 102 of 100 surface. In this example, the polystyrene nanospheres were removed by ultrasonic cleaning in butanone. Please refer to FIG. 7 for a scanning electron micrograph of a three-dimensional nanostructure array prepared according to a first embodiment of the present invention.

The three-dimensional nanostructure array 10 of the stepped structure can be prepared by the method of combining the mask layer 108 and the reactive etching atmosphere 110, and the method is simple in process and low in cost.

Referring to FIG. 8, a three-dimensional nanostructure array 20 according to a second embodiment of the present invention includes a substrate 200 and a plurality of three-dimensional nanostructures 202 disposed on opposite surfaces of the substrate 200. The three-dimensional nanostructure 202 includes a first circular table 204 and a second circular table 206 disposed on the surface of the first circular table 204. The three-dimensional nanostructure array 20 provided by the second embodiment of the present invention has substantially the same structure as the three-dimensional nanostructure array 10 provided in the first embodiment, and the difference is that the substrate 200 of the second embodiment is provided with a plurality of three dimensions on opposite surfaces. Nanostructure 202.

Referring to FIG. 9, a three-dimensional nanostructure array 30 according to a third embodiment of the present invention includes a substrate 300 and a plurality of three-dimensional nanostructures 302 disposed on a surface of the substrate 300. The three-dimensional nanostructure 302 includes a first circular table 304, a second circular table 306 disposed on the surface of the first circular table 304, and a third circular table 308 disposed on the surface of the second circular table 306. The three-dimensional nanostructure array 30 provided by the third embodiment of the present invention has substantially the same structure as the three-dimensional nanostructure array 10 provided in the first embodiment, and the difference is that the three-dimensional nanostructure 302 of the third embodiment is a three-layer circular table. structure.

Referring to FIG. 10, a three-dimensional nanostructure array 40 according to a fourth embodiment of the present invention includes a substrate 400 and a plurality of three-dimensional nanostructures 402 disposed on a surface of the substrate 400. The three-dimensional nanostructure array 40 provided by the fourth embodiment of the present invention has substantially the same structure as the three-dimensional nanostructure array 10 provided in the first embodiment, and the difference is that the three-dimensional nanostructure 402 of the third embodiment is a stepped depression. The structure, that is, the recessed space defined by the substrate 400. The shape of the three-dimensional nanostructure 402 is a double-decked space, specifically including a first circular-shaped space 404 and a second circular-shaped space 406 communicating with the first circular-shaped space 404. The first truncated cone shaped space 404 is disposed coaxially with the second truncated cone shaped space 406. The first truncated cone shaped space 404 is disposed coaxially with the second truncated cone shaped space 406. The second frustum-shaped space 406 is disposed near the surface of the substrate 400. The diameter of the second truncated cone shaped space 406 is greater than the diameter of the first truncated cone shaped space 404.

In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by those skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

10,20,30,40‧‧‧Three-dimensional nanostructure array

100,200,300,400‧‧‧Base

102,202,302,402‧‧‧Three-dimensional nanostructure

104,204,304‧‧‧First round table

106,206,306‧‧‧Second round table

108‧‧‧ mask layer

110‧‧‧Reactive etching atmosphere

308‧‧‧ Third round table

404‧‧‧First round table space

406‧‧‧Second round table space

Claims (13)

A method for preparing a three-dimensional nanostructure array, comprising the steps of: providing a substrate; forming a mask layer on a surface of the substrate; etching the substrate with a reactive etching atmosphere while cutting the mask layer to form a ladder a three-dimensional nanostructure array of a structure, wherein the step of etching the substrate using a reactive etching atmosphere is performed in a microwave plasma system, the ratio of the power of the microwave plasma system to the gas pressure of the atmosphere of the microwave plasma system Less than 20:1; and remove the mask layer. The method for preparing a three-dimensional nanostructure array according to Item 1, wherein the method of forming a mask layer on the surface of the substrate is to form a single layer of nanospheres on the surface of the substrate, thereby forming a nanosphere in the nanosphere. A stepped convex structure is prepared at the corresponding position. The method for preparing a three-dimensional nanostructure array according to claim 2, wherein the single-layer nanospheres comprise a plurality of nanospheres arranged in an array. The method for preparing a three-dimensional nanostructure array according to Item 3, wherein the single-layer nanospheres comprise a plurality of hexagonal dense packed rows, equidistant determinant arrangements or concentric annular rows. Nano microspheres. The method for preparing a three-dimensional nanostructure array according to claim 2, wherein the method of forming a single layer of nanospheres on the surface of the substrate is a pulling method or a spin coating method. The method for preparing a three-dimensional nanostructure array according to claim 2, further comprising the step of performing hydrophilic treatment on a pair of substrates before forming a single layer of nanospheres on the surface of the substrate. The method for preparing a three-dimensional nanostructure array according to claim 1, wherein the working gas of the microwave plasma system comprises chlorine gas and argon gas. The method for preparing a three-dimensional nanostructure array according to Item 7, wherein the chlorine gas inlet rate is 10 standard milliliters per minute to ~60 standard milliliters per minute, and the argon gas inlet rate is For 4 standard conditions, the milliliters per minute ~ 20 standard conditions per minute. The method for preparing a three-dimensional nanostructure array according to claim 7, wherein the working gas has a gas pressure of 2 Pa to 10 Pa. The method for preparing a three-dimensional nanostructure array according to claim 1, wherein the microwave plasma system has a power of 40 watts to 70 watts. The method for preparing a three-dimensional nanostructure array according to claim 1, wherein the substrate is etched by a reactive etching atmosphere for a period of from 1 minute to 2.5 minutes. The method for preparing a three-dimensional nanostructure array according to Item 1, wherein the method of forming a mask layer on the surface of the substrate is to form a continuous film having a plurality of openings on the surface of the substrate, thereby corresponding to the opening. The position is prepared to obtain a stepped depression structure. A method for preparing a three-dimensional nanostructure array, comprising the steps of: providing a substrate; performing hydrophilic treatment on the substrate; forming a single layer of nanospheres as a mask layer on the surface of the substrate; and etching the substrate by using a reactive etching atmosphere Simultaneously cutting the mask layer to form a three-dimensional nanostructure array having a stepped structure, and the step of etching the substrate by using a reactive etching atmosphere is performed in a microwave plasma system, wherein the microwave plasma system The ratio of the pressure of the power to the atmosphere of the microwave plasma system is less than 20:1; and the mask layer is removed.