CN109727858A - Orient self assembly template transfer method - Google Patents
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- CN109727858A CN109727858A CN201811565549.XA CN201811565549A CN109727858A CN 109727858 A CN109727858 A CN 109727858A CN 201811565549 A CN201811565549 A CN 201811565549A CN 109727858 A CN109727858 A CN 109727858A
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Abstract
This application provides a kind of orientation self assembly template transfer methods.Method includes the following steps: styrene-polycarbonate block copolymer layer is formed on the substrate and is oriented self assembly, so that styrene-polycarbonate block copolymer layer forms vertical mutually separation, obtain self assembly template, self assembly template includes the first area being made of polystyrene and the second area that is made of polycarbonate；First area is removed, the litho pattern structure being located on substrate is obtained, litho pattern structure has photoengraving pattern；Photoengraving pattern is transferred to substrate surface by etching technics, to form nano graph structure in substrate surface.The above method is not necessarily to neutral line (random copolymer material), polycarbonate can be removed by using etching technics from self assembly template and form litho pattern structure, then by the way that the photoengraving pattern in litho pattern structure is transferred to lower substrate surface, required nano graph structure can be obtained, simple process and easy to implement.
Description
Technical field
This application involves IC manufacturing fields, in particular to a kind of orientation self assembly template transfer method.
Background technique
Block copolymer orients self assembly photoetching (Directed Self-Assembly of Block Copolymer
Lithography) abbreviation DSA, using the block copolymer conduct as made of two kinds of different monomer polymerizations of chemical property
Raw material, split-phase forms the figure of nanoscale under thermal annealing, then is induced figure for regularization by certain method
Nano wire or nanohole array, to form the manufacture that etching template carries out nanostructure.With other several technology (extreme ultraviolets
Quarter (EUV), nano impression (NIL), multi electron beam direct writing technology (M-EBDW), nothing cover polishing and carve (Maskless
Lithography)) compare, DSA because be not necessarily to light source and mask plate, with low cost, high-resolution, high yield it is intrinsic excellent
Gesture just quickly obtains the extensive concern of people.
Block copolymer (Block Copolymer) self assembly is a kind of completely new " from bottom to top " (Bottom-up)
Processing technology can be formed since it is the building for carrying out nanostructure from molecular level from several nanometers to hundreds of
Nanometer, even micron order, resolution ratio nearly singular integral are adjustable varied, and have regularly arranged nano junction in good order
Structure.Since covalent bond (such as hydrogen bond, F- or-NH-) the connection block in block copolymer has incompatibility in chemistry
And self assembly easily occurs, it is acted on using the micron-scale phase separation of block copolymer, obtain the week of long-range order with can be convenient
Phase property structure.Because the periodic structure being self-assembly of is very regular and size is unified, can have in semiconductor fabrication
It is quite widely applied, such as lamellar phase can carry out the manufacture of Fin structure and grid structure and first layer metal in FinFET
Interconnection layer it is graphical, columnar phase may make contact the manufacture in hole.
Using the characteristic of the above block copolymer, it is made to be oriented self assembly (Directed in film, hole, hole, slot
Self-assembly, DSA), different nanostructured patterns can be formed.Currently, nano junction is prepared by building self assembly template
Structure and nano-device have become current research hotspot.Key is to prepare template (mould first with Self-Assembling of Block Copolymer
Plate preparation), and then litho pattern is formed, then (i.e. template is transferred on substrate with dry etching (or wet etching) technology
Transfer), so as to be used to prepare the controllable nano-structure array of different sizes, IC design, nano-device.By changing
Chain length, composition, spin coating film thickness, the annealing temperature time etc. for becoming block copolymer, it is oriented it in film, hole, hole, slot
Self assembly can form different patterns, such as spherical phase (S, S'), columnar phase (C, C'), helical form phase (G, G') and lamellar phase
(L) etc..
Traditional Self-Assembling of Block Copolymer is using PS-b-PMMA, however, in order to make by above-mentioned block copolymer shape
At orientation self assembly template in certain process conditions (under the conditions of such as suitable thermal annealing temperatures), be capable of forming vertical point
Phase needs neutral line (random copolymer material) in template shifting process, so that two blocks in block copolymer
Can be equal on the surface of neutral layer surface, neutral line is the corresponding random copolymer of block copolymer, and with system, is used
Neutral line is also possible that substrate is smooth regular, however, the addition of above-mentioned neutral line volume will lead to complex process.In addition, in order to increase
The corrosion stability of strong figure, industry develop atomic layer deposition Al again2O3(ALD Al2O3) enhancing transfer techniques, it be utilize
TMA presoma is readily adsorbed in the hydrophilic material surface containing hydroxyl (- OH) and is not easy to be adsorbed on non-hydrophilic surface, from
And selective Al can be carried out2O3Atomic layer deposition.This technology can greatly reduce etching to block copolymer according to
Rely.It can be by enhanced Al2O3In pattern transfer to following mask layer, or directly carry out the etching of substrate.It is noticeable
It is, in Al2O3Downwards in mask layer or substrate transfer process, due to generally using the fluorine-based etching gas of carbon, in technical process
The AlFx accessory substance of generation is easy to be deposited on bottom, and mask layer is caused to be difficult to thoroughly open, generally require a large amount of over etching and
Necessary cleaning process, so that its etching depth is more difficult to control.
Summary of the invention
The main purpose of the application is to provide a kind of orientation self assembly template transfer method, fixed in the prior art to solve
The problem of to self assembly template transfer method complex process.
To achieve the goals above, a kind of orientation self assembly template transfer method is provided, comprising the following steps: in substrate
Upper formation styrene-polycarbonate block copolymer layer is simultaneously oriented self assembly, so that styrene-polycarbonate block copolymer layer
Form vertical mutually separation, obtain self assembly template, self assembly template include the first area being made of polystyrene and by
The second area that polycarbonate is constituted；First area is removed, the litho pattern structure being located on substrate, litho pattern structure are obtained
With photoengraving pattern；Photoengraving pattern is transferred to substrate surface by etching technics, to form nano graph knot in substrate surface
Structure.
Further, the step of obtaining self assembly template includes: that styrene-polycarbonate block copolymer is spin-coated on substrate
On, styrene-polycarbonate block copolymer layer is obtained, it is preferably spun on a thickness of 30~50nm；Styrene-carbonate blocks are total
The annealing of polymers layer is to be oriented self assembly, and preferably annealing temperature is 155~175 DEG C, and preferably annealing time is 8~20min.
Further, using oxygen plasma etch technique remove first area, preferably gas flow be 30~
100sccm, preferably gas pressure are 8~20mt, and preferably radio-frequency power is 80~120w, and preferably etch period is 5~12s.
Further, in the step of photoengraving pattern is transferred to substrate surface, using litho pattern structure as mask etching
Substrate, to obtain nano graph structure.
Further, before the step of styrene-polycarbonate block copolymer layer is formed on the substrate, method further include
The step of hard mask layer is formed on substrate, the step of photoengraving pattern is transferred to substrate surface includes: to be with litho pattern structure
Mask etching hard mask layer, to obtain Patterned masking layer；Using Patterned masking layer as mask etching substrate, to obtain nanometer figure
Shape structure.
Further, before the step of removing first area, method is further comprising the steps of: using atomic layer deposition work
Skill is by Al2O3Selective deposition forms enhancing region and obtains after the step of removing first area by increasing into second area
The litho pattern structure that strong region is constituted.
Further, in atomic layer deposition, with THA and H2O is persursor material depositing Al2O3, preferred deposition temperature
Degree is 80~130 DEG C.
Further, before the step of styrene-polycarbonate block copolymer layer is formed on the substrate, method further include
The step of hard mask layer and transition zone are sequentially formed on substrate, transition zone is located at side of the hard mask layer far from substrate, by photoetching
It includes: using litho pattern structure as mask etching transition zone, to obtain graphical transition that pattern, which is transferred to the step of substrate surface,
Layer；Using graphical transition zone as mask etching hard mask layer, to obtain Patterned masking layer；It is carved by exposure mask of Patterned masking layer
Substrate is lost, to obtain nano graph structure.
Further, transition zone Si3N4Or α-Si3N4。
Further, transition zone with a thickness of 50~100nm.
Using the technical solution of the application, a kind of orientation self assembly template transfer method is provided, the above method uses benzene
Self assembly template is prepared in ethylene-polycarbonate block copolymer (PS-b-PC), and this each block of material has very narrow
The surface of range of molecular weight distributions, polystyrene (PS) and polycarbonate (PC) can be very close, (random total without neutral line
Polymer material), polycarbonate (PC) can be removed from self assembly template, be formed by using techniques such as plasma etchings
Litho pattern structure, then by the way that the photoengraving pattern in litho pattern structure is transferred to lower substrate surface, it will be able to obtain
Required nano graph structure, simple process and easy to implement.
Detailed description of the invention
The accompanying drawings constituting a part of this application is used to provide further understanding of the present application, and the application's shows
Meaning property embodiment and its explanation are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 is shown in the orientation self assembly template transfer method provided by the application embodiment, in substrate surface
The matrix the schematic diagram of the section structure for forming styrene-polycarbonate block copolymer layer and being oriented after self assembly；
Fig. 2 shows use atom layer deposition process by Al2O3After selective deposition is into second area shown in FIG. 1
Matrix the schematic diagram of the section structure；
Fig. 3 shows the matrix the schematic diagram of the section structure after removing first area shown in Fig. 2；
Fig. 4 is shown using litho pattern structure as the matrix the schematic diagram of the section structure after mask etching substrate shown in Fig. 3；
Fig. 5 shows the matrix the schematic diagram of the section structure after removing litho pattern structure shown in Fig. 4；
Fig. 6 is shown in the orientation self assembly template transfer method provided by the application embodiment, in transition zone table
The matrix the schematic diagram of the section structure that face forms styrene-polycarbonate block copolymer layer and is oriented after self assembly；
Fig. 7 is shown Al using atom layer deposition process2O3After selective deposition is into second area shown in fig. 6
Matrix the schematic diagram of the section structure；
Fig. 8 shows the matrix the schematic diagram of the section structure after removing first area shown in Fig. 7；
Fig. 9 is shown using litho pattern structure as the matrix cross-section structure signal after mask etching transition zone shown in Fig. 8
Figure；
Figure 10 is shown to be shown by the matrix cross-section structure after mask etching hard mask layer shown in Fig. 9 of graphical transition zone
It is intended to；
Figure 11 is shown using Patterned masking layer as the matrix cross-section structure signal after mask etching substrate shown in Fig. 10
Figure；
After Figure 12 shows litho pattern structure, graphical transition zone and Patterned masking layer shown in removal Figure 11
Matrix the schematic diagram of the section structure.
Wherein, the above drawings include the following reference numerals:
10, substrate；20, first area；30, second area；310, enhance region；40, hard mask layer；410, it graphically covers
Film layer；50, transition zone；510, graphical transition zone.
Specific embodiment
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.The application is described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
In order to make those skilled in the art more fully understand application scheme, below in conjunction in the embodiment of the present application
Attached drawing, the technical scheme in the embodiment of the application is clearly and completely described, it is clear that described embodiment is only
The embodiment of the application a part, instead of all the embodiments.Based on the embodiment in the application, ordinary skill people
Member's every other embodiment obtained without making creative work, all should belong to the model of the application protection
It encloses.
It should be noted that the description and claims of this application and term " first " in above-mentioned attached drawing, "
Two " etc. be to be used to distinguish similar objects, without being used to describe a particular order or precedence order.It should be understood that using in this way
Data be interchangeable under appropriate circumstances, so as to embodiments herein described herein.In addition, term " includes " and " tool
Have " and their any deformation, it is intended that cover it is non-exclusive include, for example, containing a series of steps or units
Process, method, system, product or equipment those of are not necessarily limited to be clearly listed step or unit, but may include without clear
Other step or units listing to Chu or intrinsic for these process, methods, product or equipment.
As described in background technique, traditional Self-Assembling of Block Copolymer using PS-b-PMMA, however,
It needs neutral line (random copolymer material) in template shifting process, so as to cause complex process.Present inventor
It is studied regarding to the issue above, proposes a kind of orientation self assembly template transfer method, as shown in Figures 1 to 12, this method
The following steps are included: forming styrene-polycarbonate block copolymer layer on substrate 10 and being oriented self assembly, so that benzene second
Alkene-polycarbonate block copolymer layer forms vertical mutually separation, obtains self assembly template, and self assembly template includes by polystyrene
The first area 20 of composition and the second area 30 being made of polycarbonate；First area 20 is removed, obtains being located at substrate 10
On litho pattern structure, litho pattern structure have photoengraving pattern；Photoengraving pattern is transferred to substrate 10 by etching technics
Surface, to form nano graph structure on 10 surface of substrate.
Self assembly template, this material is prepared using styrene-polycarbonate block copolymer (PS-b-PC) in the above method
Expect that each block has very narrow range of molecular weight distributions (molecular weight about are as follows: 7000-11000), polystyrene (PS) and poly-
The surface of carbonic ester (PC) can be very close, without neutral line (random copolymer material), by using plasma etching
Etc. techniques polycarbonate (PC) can be removed from self assembly template, litho pattern structure is formed, then by by photoetching figure
Photoengraving pattern in shape structure is transferred to lower substrate surface, it will be able to obtain required nano graph structure, simple process and
It is easy to implement.
The exemplary implementation according to orientation self assembly template transfer method provided by the present application is described in more detail below
Mode.However, these illustrative embodiments can be implemented by many different forms, and it is not construed as only limiting
In embodiments set forth herein.It should be understood that thesing embodiments are provided so that disclosure herein is thorough
Bottom and complete, and the design of these illustrative embodiments is fully conveyed to those of ordinary skill in the art.
Firstly, forming styrene-polycarbonate block copolymer layer on substrate 10 and being oriented self assembly, so that benzene second
Alkene-polycarbonate block copolymer layer forms vertical mutually separation, obtains self assembly template, and self assembly template includes by polystyrene
The first area 20 of composition and the second area 30 being made of polycarbonate, as shown in figures 1 to 6.
In above-mentioned the step of obtaining self assembly template, if directly forming block copolymer vertical nanowires pattern, Ke Yizhi
It connects and styrene-polycarbonate block copolymer layer is formed in 10 surface of substrate, as shown in Figure 1；If preparing silica-base material substrate to receive
The structures such as rice array, IC design, nano-device need first to sequentially form hard mask layer 40 and transition zone on substrate 10
50, then meet 50 surface of transition zone styrene-polycarbonate block copolymer layer being formed on the substrate 10, such as Fig. 6
It is shown.
Those skilled in the art the type to above-mentioned substrate 10 can carry out Rational choice according to actual needs, such as the substrate
10 can be body silicon, SOI, Ge, GeSi etc..
In order to effectively realize the vertical mutually separation in styrene-polycarbonate block copolymer layer, it is preferable that obtain
The step of stating self assembly template includes: that styrene-polycarbonate block copolymer is spin-coated on substrate 10, obtains styrene-carbon
Acid esters block copolymer layer, spin coating thickness are preferably 30~50nm；By styrene-polycarbonate block copolymer layer annealing to carry out
Self assembly is oriented, annealing temperature is preferably 155~175 DEG C, and annealing time is preferably 8~20min.
After the self assembly template for obtaining above-mentioned vertical phase separation, first area 20 is removed, obtains being located on substrate 10
Litho pattern structure, litho pattern structure have photoengraving pattern, as shown in figures 3 and 8.Due to the firstth area in self assembly template
Domain 20 and second area 30 are periodically to be alternately formed on substrate 10, therefore, can be effectively removed by etching technics
First area 20 is stated, to obtain the litho pattern structure being made of first area 20.
Preferably, above-mentioned first area 20 being removed using oxygen plasma etch technique, gas flow is preferably 30~
100sccm, gas pressure are preferably 8~20mt, and radio-frequency power is preferably 80~120w, and etch period is preferably 5~12s.It adopts
It can be realized with above-mentioned preferred etching technics and its process conditions and first area 20 quickly and efficiently removed.
In a preferred embodiment, before the step of removing first area 20, the above-mentioned orientation of the application is certainly
Rigging transfer method is further comprising the steps of: using atom layer deposition process by Al2O3Selective deposition is to second area 30
In, form enhancing region 310；At this point, obtaining the light constituted by enhancing region 310 after the step of removing first area 20
Graphic structure is carved, as shown in Figure 2 and Figure 7.
In above-mentioned preferred embodiment, by using technique for atomic layer deposition selectively by Al2O3It deposits to wherein
Among a kind of block copolymer polycarbonate (PC), to form the PC layer (enhancing region 310) of enhanced etching, due to them
Between there are higher etching selection ratio, significantly reduce the dependence etched to block copolymer, make another block copolymer
Molecule polystyrene (PS) is removed more easily by etching technics.
In order to effectively enhance above-mentioned second area 30, it is further preferable that in above-mentioned atom layer deposition process, with THA
And H2O is persursor material depositing Al2O3, depositing temperature is preferably 80~130 DEG C.
After obtaining the above-mentioned litho pattern structure being made of first area 20, photoengraving pattern is turned by etching technics
10 surface of substrate is moved on to, to form nano graph structure on 10 surface of substrate.Above-mentioned nano graph structure can for slot, hole, hole,
Line style and other rules or irregular figure or pattern.
In above-mentioned the step of photoengraving pattern is transferred to 10 surface of substrate, if directly forming block copolymer vertical nanowires
Pattern, can be directly using litho pattern structure as mask etching substrate 10, to obtain nano graph structure, as shown in Figure 4.Then
The litho pattern structure in the nano graph structure can be removed, so that nano graph body structure surface is exposed, such as Fig. 5 institute
Show.
If preparing the structures such as silica-base material substrate nano-array, IC design, nano-device, in a kind of preferred reality
It applies in mode, before the step of forming styrene-polycarbonate block copolymer layer on substrate 10, is first formed on 10 surface of substrate
Hard mask layer 40, at this point, above-mentioned the step of photoengraving pattern is transferred to 10 surface of substrate includes: using litho pattern structure as exposure mask
Hard mask layer 40 is etched, to obtain Patterned masking layer 410；With Patterned masking layer 410 for mask etching substrate 10, to obtain
Nanostructured pattern.
In above-mentioned preferred embodiment, atom layer deposition process is first used by Al2O3Selective deposition is to the secondth area
In domain 30, due to generally using the fluorine-based etching gas of carbon, the AlFx accessory substance generated in technical process is easy to be deposited on bottom,
Cause hard mask layer 40 to be difficult to thoroughly open, generally require a large amount of over etching and necessary cleaning process, so that its etching is deep
It spends more difficult to control.
In order to solve the above-mentioned technical problem, in another preferred embodiment, hard mask layer is formed on substrate 10
After 40, one layer of transition zone 50 is re-formed far from the side of substrate 10 in hard mask layer 40, at this point, above-mentioned shift photoengraving pattern
It include: using litho pattern structure as mask etching transition zone 50, to obtain graphical transition zone to the step of 10 surface of substrate
510, as shown in Figure 9；With graphical transition zone 510 for mask etching hard mask layer 40, to obtain Patterned masking layer 410, such as
Shown in Figure 10；With Patterned masking layer 410 for mask etching substrate 10, to obtain nanostructured pattern, as shown in figure 11.Then
Litho pattern structure, graphical transition zone 510 and Patterned masking layer in the nano graph structure can be removed
410, so that nano graph body structure surface is exposed, as shown in figure 12.
Using above-mentioned preferred embodiment, so that will not occur more accessory substance accumulation in etching process
In the bottom of etched features, so that self assembly template is easier to be transferred on following hard mask layer 40, and then more accurate
The etching structure that ground is needed.
Those skilled in the art can carry out Rational choice according to type of the prior art to above-mentioned hard mask layer, such as
SiO2.And in order to effectively reduce the bottomland accumulation that accessory substance is deposited in etched features, it is further preferable that above-mentioned transition zone 50 is
Si3N4Or α-Si3N4；Also, it is further preferable that above-mentioned transition zone 50 with a thickness of 50~100nm.
The above-mentioned orientation self assembly template transfer method of the application is further illustrated below in conjunction with embodiment.
Embodiment 1
Orientation self assembly template transfer method provided in this embodiment the following steps are included:
Styrene-polycarbonate block copolymer is spin-coated on 10 surface of substrate, obtains styrene-polycarbonate block copolymer
Layer, and by the styrene-polycarbonate block copolymer layer annealing to be oriented self assembly, obtain the self assembly of vertical mutually separation
Template, self assembly template include the first area 20 being made of polystyrene and the second area 30 being made of polycarbonate,
As shown in Figure 1；
With THA and H2O is persursor material, using atom layer deposition process by Al2O3Selective deposition is to second area 30
In, enhancing region 310 is formed, as shown in Figure 2；
Above-mentioned first area 20 is removed using oxygen plasma etch technique, obtains being located on substrate 10 by above-mentioned enhancement region
The litho pattern structure that domain 310 is constituted, the litho pattern structure have photoengraving pattern, as shown in Figure 3；
Using above-mentioned litho pattern structure as the above-mentioned substrate 10 of exposure mask dry etching, wet etching removes the litho pattern structure
Afterwards, required nano graph structure is obtained on above-mentioned 10 surface of substrate, as shown in Figure 4 and Figure 5.
Embodiment 2
Orientation self assembly template transfer method provided in this embodiment the following steps are included:
The substrate 10 that surface is provided with hard mask layer 40 and transition zone 50 is provided, it is separate that transition zone 50 is located at hard mask layer 40
Styrene-polycarbonate block copolymer is spin-coated on 50 surface of transition zone, it is embedding to obtain styrene-carbonic ester by the side of substrate 10
Section copolymer layer, and by the styrene-polycarbonate block copolymer layer annealing to be oriented self assembly, obtain vertical mutually separation
Self assembly template, self assembly template includes the first area 20 being made of polystyrene and be made of polycarbonate second
Region 30, as shown in Figure 6；
With THA and H2O is persursor material, using atom layer deposition process by Al2O3Selective deposition is to second area 30
In, enhancing region 310 is formed, as shown in Figure 7；
Above-mentioned first area 20 is removed using oxygen plasma etch technique, obtains being located on substrate 10 by above-mentioned enhancement region
The litho pattern structure that domain 310 is constituted, the litho pattern structure have photoengraving pattern, as shown in Figure 8；
Using above-mentioned litho pattern structure as exposure mask dry etching transition zone 50, to obtain graphical transition zone 510, such as Fig. 9
It is shown；
With above-mentioned graphical transition zone 510 for exposure mask dry etching hard mask layer 40, to obtain Patterned masking layer 410,
As shown in Figure 10；
With above-mentioned Patterned masking layer 410 for the above-mentioned substrate 10 of exposure mask dry etching, wet etching removes above-mentioned photoetching figure
After shape structure, graphical transition zone 510 and Patterned masking layer 410, required nanometer figure is obtained on above-mentioned 10 surface of substrate
Shape structure, as is illustrated by figs. 11 and 12.
It can be seen from the above description that the application the above embodiments realize following technical effect:
1, it using above-mentioned orientation self assembly template transfer method, is not necessarily to neutral line (random copolymer material), by using
The techniques such as plasma etching can remove polycarbonate (PC) from self assembly template, form litho pattern structure, then
By the way that the photoengraving pattern in litho pattern structure is transferred to lower substrate surface, it will be able to obtain required nano graph knot
Structure, simple process and easy to implement；
2, using above-mentioned graphical transition zone, so that will not occur more accessory substance accumulation in etching process
In the bottom of etched features, so that self assembly template is easier to be transferred on following hard mask layer, and then more precisely
The etching structure needed.
The foregoing is merely preferred embodiment of the present application, are not intended to limit this application, for the skill of this field
For art personnel, various changes and changes are possible in this application.Within the spirit and principles of this application, made any to repair
Change, equivalent replacement, improvement etc., should be included within the scope of protection of this application.
Claims (10)
1. a kind of orientation self assembly template transfer method, which comprises the following steps:
Styrene-polycarbonate block copolymer layer is formed on substrate (10) and is oriented self assembly, so that the styrene-
Polycarbonate block copolymer layer forms vertical mutually separation, obtains self assembly template, and the self assembly template includes by polyphenyl second
The first area (20) and the second area (30) being made of polycarbonate that alkene is constituted；
The first area (20) are removed, the litho pattern structure being located on the substrate (10), the litho pattern knot are obtained
Structure has photoengraving pattern；
The photoengraving pattern is transferred to the substrate (10) surface by etching technics, to be formed on the substrate (10) surface
Nano graph structure.
2. the method according to claim 1, wherein the step of obtaining the self assembly template includes:
Styrene-polycarbonate block copolymer is spin-coated on the substrate (10), it is total to obtain the styrene-carbonate blocks
Polymers layer, the preferably described spin coating is with a thickness of 30~50nm；
By the styrene-polycarbonate block copolymer layer annealing to carry out the orientation self assembly, preferably annealing temperature is 155
~175 DEG C, preferably annealing time is 8~20min.
3. the method according to claim 1, wherein removing firstth area using oxygen plasma etch technique
Domain (20), preferably gas flow be 30~100sccm, preferably gas pressure be 8~20mt, preferably radio-frequency power be 80~
120w, preferably etch period are 5~12s.
4. the method according to claim 1, wherein the photoengraving pattern is transferred to the substrate (10) table
In the step of face, using the litho pattern structure as substrate described in mask etching (10), to obtain the nano graph structure.
5. the method according to claim 1, wherein forming the styrene-carbonic acid on the substrate (10)
It, will the method also includes forming hard mask layer (40) on substrate (10) before the step of ester block copolymer layer
The photoengraving pattern is transferred to the step of substrate (10) surface and includes:
Using the litho pattern structure as hard mask layer described in mask etching (40), to obtain Patterned masking layer (410)；
It is substrate (10) described in mask etching with the Patterned masking layer (410), to obtain the nano graph structure.
6. the method according to any one of claims 1 to 5, which is characterized in that removing the first area (20)
Before step, the method also includes following steps:
Using atom layer deposition process by Al2O3Selective deposition forms enhancing region (310) into the second area (30),
After the step of removing first area (20), the photoetching figure being made of enhancing region (310) is obtained
Shape structure.
7. according to the method described in claim 6, it is characterized in that, in the atom layer deposition process, with THA and H2Before O is
Drive body material depositing Al2O3, preferred deposition temperature is 80~130 DEG C.
8. according to the method described in claim 6, it is characterized in that, forming the styrene-carbonic acid on the substrate (10)
Before the step of ester block copolymer layer, the method also includes hard mask layer (40) and transition are sequentially formed on substrate (10)
The step of layer (50), the transition zone (50) are located at side of the hard mask layer (40) far from the substrate (10), will be described
Photoengraving pattern is transferred to the step of substrate (10) surface and includes:
Using the litho pattern structure as transition zone described in mask etching (50), to obtain graphical transition zone (510)；
It is hard mask layer (40) described in mask etching with the graphical transition zone (510), to obtain Patterned masking layer
(410)；
It is substrate (10) described in mask etching with the Patterned masking layer (410), to obtain the nano graph structure.
9. according to the method described in claim 8, it is characterized in that, the transition zone (50) is Si3N4Or α-Si3N4。
10. according to the method described in claim 8, it is characterized in that, the transition zone (50) with a thickness of 50~100nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110129827A (en) * | 2019-06-18 | 2019-08-16 | 上海氯碱化工股份有限公司 | The method for preparing modified ruthenium titanium coating anode by lithium Induction Transformation method |
| CN113448163A (en) * | 2020-03-25 | 2021-09-28 | 芯恩（青岛）集成电路有限公司 | DSA-based lithography method |
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