TW585837B - Method for fabricating the array mold of a clearance-free 3D micro structure - Google Patents
Method for fabricating the array mold of a clearance-free 3D micro structure Download PDFInfo
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- TW585837B TW585837B TW91109968A TW91109968A TW585837B TW 585837 B TW585837 B TW 585837B TW 91109968 A TW91109968 A TW 91109968A TW 91109968 A TW91109968 A TW 91109968A TW 585837 B TW585837 B TW 585837B
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585837 五、發明說明(1) ~ — 一 -— 料拮t ί明尤指其提供一種可有效消除微結構陣列間距之 破填隙製程技術。 < 按,微透鏡(microlens )廣泛應用於光纖、光通訊 一 ^電子產品.,諸如光纖末端之聚光、光掃瞄之聚焦及 不器之微透鏡陣列,甚至微光學積體元件之聚光等。然· =二在一般微透鏡陣列的製作過程中,每一個微透鏡間往 1子在一段微小的間隙,而這些間隙也影響整體解析度的 :低·,如台灣專利申請第89 1 22〇15號「批次生產微球透 列」,睛參閱第1圖,其係於基板丄〇 〇上塗佈一層 亞醯胺組成物2 1 〇及光阻組成物2 2 〇,再以黃光ϋ 法(lithography)將微透鏡之圖樣(paUern)成型於= 板1 0 0表面,其中該圖樣具有一底層,即聚亞醯胺組2 物層2 1 〇 ,及一頂層,即光阻組成物層2 2 〇 (如第工 圖(B) 、 (c)),接著即予以加熱至18〇°c〜22(Tc 的玻璃轉換溫度,以進行熱熔(re f 1〇w ),此時光阻組成 物層2 2 0即因内聚力與表面張力的平衡而形成球型之微 球透鏡2 3 0 (如第1圖(d ));由於微透鏡陣列係以 熱熔(ref low )轉換成型,為了避免在轉換的熱熔過程 中’透鏡間產生熱熔重疊的現象,故在圖樣以黃光微影法 成型時’即在圖樣間設有適當之間距,在完成微透鏡陣列 的成型後,此間距仍將會存在,而影響整體微透鏡的解析 度;為了消除微透鏡陣列的間隙,雖可改採如精密機械加 工、灰階光罩或準分子雷射加工技術,然因精密機械加工 單位成本高,灰階光罩週邊技術較不成熟,準分子雷射加585837 V. Description of the invention (1) ~----Material shortage, especially for providing a gap-filling process technology that can effectively eliminate the microstructure array pitch. < Microlens is widely used in optical fiber and optical communication electronics products, such as micro-lens arrays for focusing light at the ends of optical fibers, focusing and scanning of optical fibers, and even micro-optical integrated components Light etc. However, in the manufacturing process of general microlens arrays, there is a small gap between each microlens to 1 sub, and these gaps also affect the overall resolution: low, such as Taiwan Patent Application No. 89 1 22〇 No. 15 "Batch production of microspheres through", as shown in Figure 1, which is coated on the substrate OO with a layer of imine composition 2 1 0 and photoresist composition 2 2 0, and then yellow light lith (lithography) the microlens pattern (paUern) is formed on the surface of the plate 100, where the pattern has a bottom layer, that is, a polyurethane group 2 layer 2 2 0, and a top layer, that is, a photoresist composition The material layer 2 2 0 (as in the drawings (B), (c)), and then it is heated to 180 ° c ~ 22 (Tc glass transition temperature for hot melting (re f 1〇w), this The photoresist composition layer 2 2 0 is a spherical microsphere lens 2 3 0 (such as Fig. 1 (d)) formed by the balance of cohesion and surface tension; since the microlens array is converted by ref low Molding, in order to avoid the phenomenon of 'hot-melt overlap between lenses during the hot-melt conversion process, so when the pattern is shaped by yellow light lithography' There is an appropriate gap between the patterns. After the formation of the microlens array, this gap will still exist and affect the resolution of the overall microlens. , Gray scale photomask or excimer laser processing technology, but because of the high unit cost of precision machining, gray scale photomask peripheral technology is less mature, excimer laser processing
P〇2-025.ptd 第4頁 585837 五、發明說明(2) '' 工亦因表面精縫度不佳曲率不易控制,而不適合大量生 產,進而影響整體的應用。 , 此’本發明人遂以其多年之工作經驗,經過不斷的 研究設計,終究研創出一種「無間隙3 一 D微結構陣列模 仁之製程」,以有效改善習式各種之缺弊,此即為明 之設計宗旨。 a a丨 、,即本發明之主要目的係提供一種微填隙製程技術,以 消除微結構陣列之間隙,進而提高整體的解析度。P〇2-025.ptd Page 4 585837 V. Description of the invention (2) '' Because of the poor surface fine seam, the curvature is not easy to control, and it is not suitable for mass production, which affects the overall application. With this many years of work experience, the present inventor then developed a "gap-free 3-D microstructure array mold core process" after continuous research and design to effectively improve the shortcomings of various habits. Designed for Ming. a a 丨, that is, the main purpose of the present invention is to provide a micro-interstitial process technology to eliminate the gaps between the micro-structure arrays, thereby improving the overall resolution.
本發明之另一目的係提供一種無間隙微結構陣列製程 技術,以提高微結構陣列之密度,進而有效縮小單位面 積0 ,一本發明又一目的係提供一種無間隙微結構陣列製程幸 :,以適用於不同形狀之微結構陣列的製作、並以簡單白 裝程,降低製程與設備的成本。 較佳具體實施例之詳細說明·· 一本發明無間隙3 ~ D微透鏡陣列模仁之製程,主要方, 板上塗佈高分子緩衝層(buffer);之後於高分子每 衡層上塗佈光阻組成物層;隨之以黃光微影法 =ijth〇graphy)於光阻組成物層形成圖樣(pattem); ,者加熱該基板至高於該光阻組成物之玻璃轉換溫度(Τί 二進仃熱熔(reflow)並保持該工作溫度至光阻組$ > 陣列;於各微結構之表面鍍覆一層金屬導塌 後於陣列之微結構表面均勻電鱗一層金屬層,P 5亥電铸層消除微結構間之間隙,而完成無間,隙微結構陣列Another object of the present invention is to provide a gapless microstructure array process technology to increase the density of the microstructure array and thereby effectively reduce the unit area of 0. Another object of the present invention is to provide a gapless microstructure array process. Fortunately, It is suitable for the fabrication of microstructure arrays with different shapes, and the simple white process reduces the cost of process and equipment. Detailed description of the preferred embodiments. A process for manufacturing the gapless 3 ~ D microlens array mold core of the present invention. The main method is to coat a polymer buffer layer on the board; then apply it to each polymer layer. A photoresist composition layer; then a pattern is formed on the photoresist composition layer by yellow light lithography method (ijth〇graphy); or the substrate is heated to a temperature higher than the glass transition temperature of the photoresist composition (T 2) Hot melt (reflow) and maintain the working temperature to the photoresistor array. The surface of each microstructure is plated with a layer of metal to collapse. A layer of metal is uniformly scaled on the surface of the microstructure of the array. Layer eliminates gaps between microstructures and completes gapless, gap microstructure arrays
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585837 五、發明說明(3) 〜 之模仁的製作。 利用本發明無間隙3 — D微結構陣列之模仁,即可以 二次電鑄或者放電加工等其他方式翻製出金屬模具,再以 微射出成型或微熱壓成型,製作出無間隙微結構陣列。 | 本發明無間隙3 — D微結構陣列模仁之製程中,於基 板上塗佈南分子緩衝層、光阻組成物層之方法,較佳為旋 塗(spin coating ),而能均勻分散塗佈。高分子緩衝層 塗佈於基板後’可進行預烤(pre-baking),該高分子緩| 衝層係為增加光阻組成物之附著力。該光阻組成物,以黃i 光微景々法(1 i tography )曝光、餘刻及顯影,以形成圖樣$ (pattern )。本發明之高分子緩衝層較佳為聚亞醯胺 | (polyimide)或聚醯胺(p〇lyamide),光阻組成物較佳 可為具有玻璃轉換溫度(Tg)介於1〇〇。c至350。C間之聚 合物,最佳為聚曱基丙烯酸系聚合物。待光阻組成物形成 圖樣後,加熱至高於光阻組成物玻璃轉換溫度(Tg )之工 作溫度以進行熱熔(refl〇w)。本發明係以黃光微影法 | (11 thography )成形圖樣及位置,所以不同形狀之圖樣 可由黃光微影法(1 i thography )來控制設定。本發明於 微結構表面鍍覆一層金屬導電層,較佳的方式係以濺鍍 (sputter ) —層銅(Cu )為導電層,而電銹則以鎳(η )為消除間隙之電鑄層,可獲得較高之表面精度及晶粒 小的結構。 為使貴審查委員能更瞭解本發明之技術内容,茲以 微透鏡之製作為實施例,並配合圖式說明如后:585837 V. Description of the invention (3) ~ The production of the mold kernel. By using the mold core of the gap-free 3-D microstructure array of the present invention, a metal mold can be turned out by other methods such as secondary electroforming or electrical discharge machining, and then micro-injection molding or micro-hot pressing molding is used to produce a gap-free microstructure array. . In the process of the present invention of the gap-free 3-D microstructure array mold core, a method for coating a south molecular buffer layer and a photoresist composition layer on a substrate, preferably spin coating, can uniformly disperse coating . The polymer buffer layer can be pre-baking after being coated on the substrate. The polymer buffer layer is used to increase the adhesion of the photoresist composition. The photoresist composition is exposed, etched, and developed with a yellow i light micro-photography method to form a pattern $ (pattern). The polymer buffer layer of the present invention is preferably polyimide or polyamide, and the photoresist composition may preferably have a glass transition temperature (Tg) of 100. c to 350. The polymer between C is preferably a polyfluorene-based acrylic polymer. After the photoresist composition is patterned, it is heated to an operating temperature higher than the glass transition temperature (Tg) of the photoresist composition for hot melt (refl0w). In the present invention, the yellow light lithography method (11 thography) is used to shape the pattern and position, so the patterns of different shapes can be controlled and set by the yellow light lithography method (1 i thography). In the present invention, a metal conductive layer is plated on the surface of the microstructure. A preferred method is to use a sputter-layer copper (Cu) as the conductive layer, and the rust uses nickel (η) as the electroformed layer to eliminate the gap. , Can obtain higher surface accuracy and small grain structure. In order to make your reviewing committee better understand the technical content of the present invention, the production of microlenses is taken as an example, and illustrated with the drawings as follows:
P02-025.ptd 第6頁 585837 五、發明說明(4) ---------- 請參閱第2圖(A ),本發明主要將聚亞酿胺 f olyhide)組合物 3 i 0 以旋塗(spin c〇ating)的 =式均自塗佈於基板3 〇 〇上以形成緩衝層(buffer), $將塗佈之基板3 0 0進行350。c預烤(pre — baking ) 3〇 分鐘,再將-聚丙婦酸聚合物之光阻組成物3 2 〇以旋塗 (sPln coating)均勻塗佈於聚亞醯胺組合物層3工〇 ^。請參閱第2圖(B ),以黃光微影法(lith〇graphy 於光阻組成物層3 2 〇上形成陣列的圖樣(pattern )。請參閱第2 ® ( C ),將成型有陣列圖樣之基板 加熱至1 80 C〜220°C之玻璃轉換溫度(Tg )範圍(如190 ° C ),以將圖樣進行熱熔(refl〇w ),並 維持溫度至形成微透鏡陣列,接著於冷卻後、以薄膜濺鍍 (sputter)的方式於陣列之微透鏡表面鍍覆一層銅導電 層330。請參閱第2圖(D),將有導電層之微透鏡陣 列進行電鑄(Electro f romi ng ),以鎳為電鑄層340 均勻鑛覆於微透鏡表面,並以該電铸層3 4 0消除陣列的 間隙,即完成本發明無間隙3 一 D微透鏡陣列模仁的製 作。 將本發明完成之模仁,以二次電鎊或放電加工等方式 進行翻模,即可製作出金屬模具,俾以微射出成型或微熱 壓成型出無間隙微透鏡陣列(如第3圖)’不但有效提高 整體的解析度,且能以最簡便最成熟的製程,大幅降低製 作成本。P02-025.ptd Page 6 585837 V. Description of the invention (4) ---------- Please refer to Figure 2 (A). The present invention mainly uses polyimide (f olyhide) composition 3 i 0 The spin-coating = formula is self-coated on the substrate 300 to form a buffer layer, and the coated substrate 300 is subjected to 350. c Pre-baking (pre-baking) for 30 minutes, and then coating the polyacrylic acid polymer photoresist composition 3 2 0 with spin coating (sPln coating) to uniformly coat the polyimide composition layer for 3 hours. ^ . Please refer to FIG. 2 (B), and use yellow light lithography (lithography to form an array pattern on the photoresist composition layer 3 2 〇. Please refer to FIG. 2 ® (C). The substrate is heated to a glass transition temperature (Tg) range of 1 80 C ~ 220 ° C (such as 190 ° C) to thermally fuse the pattern (refl0w) and maintain the temperature to form a microlens array, followed by cooling 3. A copper conductive layer 330 is plated on the surface of the microlenses of the array by a thin film sputtering method. Please refer to FIG. 2 (D), and electroform a microlens array with a conductive layer (Electro f romi ng) With nickel as the electroformed layer 340 uniformly covering the surface of the microlenses, and using the electroformed layer 340 to eliminate the gaps in the array, the production of the gapless 3-D microlens array mold core of the present invention is completed. The present invention The completed mold core can be turned by secondary electric pounds or electrical discharge machining to produce a metal mold. The micro-lens array (such as Figure 3) is not only effective by micro injection molding or micro hot pressing molding. Improve the overall resolution, and can use the simplest and most mature system Significantly reducing manufacturing costs for.
P02.025.ptdP02.025.ptd
585837 習式微透鏡之製程示意圖。 本發明無間隙微結構陣列模仁之製程示意圖。 本發明完成製作之放大顯像圖。 圖式簡單說明 圖式說e I第1圖 第2圖 第3圖 圖號說明: 習式部份: 1 0 0 :基板 2 2 0 :光阻組成物 本發明部份 3 0 0 :基板 3 2 0 :光阻組成物 3 4 0 :電鑄層 2 1 0 :聚亞醯胺組成物 2 3 0 :微球透鏡 3 1 0 :聚亞醯胺組合物 3 3 0 :導電層585837 Schematic diagram of the manufacturing process of custom microlenses. The manufacturing process of the gapless microstructure array mold kernel of the present invention. The enlarged image produced by the present invention. Schematic description Schematic description e I Fig. 1 Fig. 2 Fig. 3 Fig. No. Description: Convention part: 1 0 0: substrate 2 2 0: photoresist composition part of the invention 3 0 0: substrate 3 2 0: photoresist composition 3 4 0: electroformed layer 2 1 0: polyimide composition 2 3 0: microsphere lens 3 1 0: polyimide composition 3 3 0: conductive layer
P02-025.ptd 第8頁P02-025.ptd Page 8
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8026872B2 (en) | 2006-10-30 | 2011-09-27 | Au Optronics Corp. | Electroluminescent display |
TWI449658B (en) * | 2010-06-07 | 2014-08-21 | Hon Hai Prec Ind Co Ltd | Method for making 3-d nano-structured array |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8026872B2 (en) | 2006-10-30 | 2011-09-27 | Au Optronics Corp. | Electroluminescent display |
TWI449658B (en) * | 2010-06-07 | 2014-08-21 | Hon Hai Prec Ind Co Ltd | Method for making 3-d nano-structured array |
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