TWI444627B - Electric power measuring apparatus and method - Google Patents

Description

Power measuring device and power measuring method

The present invention relates to a power measuring device and a power measuring method, and more particularly to a power measuring device that uses a magnetic film as a sensor to input current and voltage, and then A signal equivalent to the power obtained from the two inputs is directly output.

In recent years, an environment utilizing the Internet (Internet) and the like has become increasingly complete, and a measurement system including a remote meter reading device of electric power is being developed.

The following methods have been used, for example, a sensor that detects rotation in an existing integrated power meter, or a new additional galvanometer (Current Transformer (CT)), a voltmeter (voltage transformer (Potential) Transformer, PT)), and the power is measured by multiplication calculation by an electronic circuit or a microprocessor, and the above-mentioned conventional integrated power meter converts the used power into the number of rotations of the disk, and accumulates Operation. However, the condition of the electric meter as described above is that not only is the apparatus large and expensive, but also excess energy is consumed.

Therefore, it has been desired to develop a power meter that can directly measure power consumption as electric power and that can be downsized and integrated.

Moreover, a power measuring device capable of utilizing the magnetoresistance effect of a magnetic film (magnetoresistance) has recently been proposed. The power consumption is directly measured as the amount of electricity (Non-Patent Document 1 and Non-Patent Document 2).

The magnetic thin film placed in parallel with the primary conductor that is in communication with the flow (constituted on the substrate) and the power sensor are configured to extract the electric power IV according to the amplitude value of the frequency component of the double frequency. The sensor applies a primary voltage to both ends of the magnetic thin film via a resistor, and extracts the output from both ends of the magnetic thin film.

The above-described power measuring device focuses on obtaining a linear characteristic by using a planar hall effect, and extracts a signal component proportional to electric power. The planar Hall effect is a phenomenon in which a resistance value of a magnetic body is obtained. It changes depending on the angle between the current direction and the magnetization direction in the magnetic body such as a ferromagnetic body.

The magnetic field sensor used herein is an element that converts a change in an external magnetic field into an electrical signal, and the magnetic field sensor patterns a magnetic field detecting film such as a ferromagnetic thin film or a semiconductor thin film, and causes a current to flow into the magnetic field. A pattern of the film is detected, and a change in the external magnetic field is converted into an electrical signal as a voltage change.

Here, the output signal is as described in the following formula (1).

Here, the output is divided into a DC component term and an AC component term.

A1 is an extra item irrespective of the electric power generated by the unbalance of the bridge resistance, and A2 is an item proportional to electric power (instantaneous electric power).

[Previous Technical Literature] [Non-patent literature]

[Non-Patent Document 1] A thin film power meter using a magnetic film (Electrical Society Magnetic Research Society Information VOL.MAG-05 No. 182)

[Non-Patent Document 2] A thin film power meter using a magnetic film (Electrical Society Magnetic Research Society Information VOL.MAG-08 No. 192)

However, the above power measuring device adopts the following method, and when the power factor is not 1, the power factor must be separately measured and calculated. The above method refers to performing the value of the amplitude value I1‧V1 of the 2ω component. The measurement is additionally measured for cos θ, and then multiplied separately to obtain I1‧V1‧cos θ. Moreover, in the case of a current waveform having a harmonic component, there is a problem that only the electric power of the fundamental harmonic component can be extracted.

Further, the power measurement method using the planar Hall effect has a problem that the output value is small, and if a large current such as an inrush current flows as a detection current, magnetization reversal occurs in the magnetic film. The output characteristics will change.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an electric power measuring device which can be simple And the power is measured stably.

Therefore, the power measuring device of the present invention is characterized by: a power measuring device including a magnetic field sensor, the magnetic field sensor comprising: a magnetic film disposed in parallel with a primary conductor through which a current flows; the power supply portion having a current input/output terminal connected to the primary conductor and supplying a component current to the magnetic thin film; and a detecting portion for detecting an output of both ends of the magnetic thin film, wherein the magnetic thin film is constructed by a bridge The first magnetic component to the fourth magnetic component are formed. The power measuring device further includes a voltage input/output terminal, and the voltage input/output terminal is connected to an intermediate position of the current input/output terminal.

Moreover, the present invention includes the magnetic power measuring device including a magnetic field applying unit that applies a DC magnetic field to the magnetic thin film in one direction.

Furthermore, the present invention includes the electric power measuring device, wherein the magnetic field applying unit applies a magnetic field to the magnetic thin film in a direction substantially orthogonal to a magnetic field generated by the primary conductor.

Moreover, the present invention includes the electric power measuring device in which the four sections of the magnetic thin film having the bridge structure are each formed of a meander shape pattern (蜿蜒 shape pattern).

Furthermore, the present invention includes the electric power measuring device in which the longitudinal direction of each of the four sections in the bridge structure and the longitudinal direction of the adjacent section are 90 degrees.

Moreover, the present invention includes the electric power measuring device described above, wherein the magnetic field applying unit is a magnet.

Furthermore, the present invention includes the electric power measuring device, wherein the magnet is formed of a pair of magnet elements, and the pair of magnet elements are disposed so as to form a magnetic field substantially parallel to the magnetic field sensor. Both sides of the above magnetic film.

Moreover, the present invention includes the electric power measuring device described above, wherein the magnet is constituted by one magnet element disposed in parallel with the surface of the magnetic film.

Furthermore, the present invention includes the electric power measuring device, wherein the magnet includes a magnetism collecting portion disposed in the vicinity of the magnetic pole, and the magnetic pole is located at both ends of the magnet element disposed in parallel with the magnetic film surface.

Furthermore, the present invention includes the electric power measuring device, wherein the magnet includes a pair of magnet elements, and the pair of magnet elements are disposed in parallel with the magnetic thin film forming surface and sandwiching the magnetic thin film.

Moreover, the present invention includes the power measuring device described above, wherein the magnetic measuring device has a magnetic flux portion between the same magnetic poles of the pair of magnet elements.

Furthermore, the present invention includes the voltage measuring device further including a voltage extracting portion formed on a surface perpendicular to a magnetic pole surface of the magnet and having a voltage input/output terminal of the magnetic field sensor The voltage coming is extracted.

Further, the present invention includes the electric power measuring device, wherein the primary conductor is provided in parallel with the magnetic thin film, and a surface of the primary conductor and the center of the magnetic thin film is perpendicular to a surface of the magnetic thin film.

Moreover, the present invention includes the electric power measuring device described above, wherein the magnetic field sensor is formed on the same substrate as the magnetic field applying unit.

Furthermore, the present invention includes the magnetic measuring device including the magnetic field sensor formed on the substrate, wherein the magnetic field applying unit includes a second magnetic film, and the second magnetic film is The magnetic thin film is formed in parallel on the substrate, and the second magnetic thin film is located outside the outer edge of the magnetic thin film.

Furthermore, the present invention includes the electric power measuring device, wherein the magnetic field applying unit includes a third magnetic thin film formed on the substrate, and the third magnetic thin film and the second magnetic thin film are formed with an insulating film interposed therebetween. The above magnetic film is held.

Further, in the above power measuring device, the magnetic thin film is formed on the substrate.

Further, the power measuring method of the present invention comprises the steps of: supplying the element current to the pattern of the magnetic film by the current input/output terminal by using the above-described power measuring device such that the magnetic resistance is symmetrical with respect to the direction of the element current. The DC component of the output generated by supplying the element current is extracted by the voltage input/output terminal and used as power information.

As shown in the above description, according to the present invention, since only the amount of change caused by the bridge structure can be extracted, the power can be calculated, the configuration is extremely simple, and the power factor can be directly measured without directly measuring the power factor. Take it out.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

Before describing the embodiments of the present invention, the measurement principle of the power measuring device of the present invention will be described. In the power measuring device of the present invention, the (strong) magnetic thin film 3 is disposed in parallel with the primary conductor through which the current flows, and the (strong) magnetic thin film 3 has a bridge structure and is composed of a symmetrical first magnetic component. It is composed of the fourth magnetic component. Further, from the primary conductor, the element current is supplied to the ferromagnetic thin film via the input/output terminal in the bridge structure, and the voltage input terminal and the voltage output terminal are connected to the intermediate position of the input/output terminal, and the magnetic thin film is The output of the terminal is detected. Next, the output is directly extracted in a direction orthogonal to the direction in which the element current is supplied to the ferromagnetic thin film including the ferromagnetic thin film and including the annular pattern. direction.

That is, as shown in the schematic diagram of Fig. 1, the points A and B are referred to as energization portions, and the points A and B are at positions symmetrical with respect to the center of the annular pattern of the magnetic thin film 3, and are in the above-described ferromagnetic On the periphery of the film pattern, the line segment CD is set to the output extraction direction, and the line segment CD is orthogonal to the above-mentioned line segment AB and passes through the center of the circle. Further, the line segment AC, the line segment CB, the line segment BD, and the line segment DA are composed of a first magnetic body component to a fourth magnetic body component having a bridge structure. That is, the direction CD orthogonal to the direction AB of the supply element current is set as the output extraction direction.

At this time, as shown in FIG. 1, consider the case where the current I1 is made. The conductor 200 is placed in the diametrical direction along the magnetic film 3 . At this time, when the vector of the magnetic field generated by the current is set to H, and the spontaneous magnetization vector of the element is set to M, the magnetic flux density vector is set to BM0, and the magnetic flux density vector is The magnetic field vector H and the spontaneous magnetization vector M of the element are synthesized (see Fig. 5). Further, when the angle formed by the current density vector and the magnetic flux density vector is θ, the resistance of each portion between the points AB of the magnetic thin film 3 is R, and the point AB which changes due to the magnetic field is between When the maximum value of the change in the resistance value of each portion is ΔR, the voltage VC-D between the points CD can be expressed by the difference between the voltage VA-C and the voltage VA-D. When the voltage VC-D is digitized, it can be expressed as VCD = I2 (ΔRsin2θ) (2).

Here, I is a current density vector, BM0 is a magnetic flux density vector, and I2 is a component current. If an alternating magnetic field (magnetic field vector H) generated by a current flowing into the primary conductor is applied to the magnetic thin film, the value of VCD of the equation (2) passes through the origin, and the vicinity of the origin (θ ≒ 0) can be regarded as a straight line. Therefore, the magnetic field sensor can be called a linear magnetic field sensor.

Next, as shown in FIG. 2, a case is considered in which the magnetic thin film 3 including the annular pattern of the above ferromagnetic thin film is set to four bridge components R1 - R4. The main part of the above-described electric power measuring device is shown in Fig. 3 as an equivalent circuit explanatory diagram. Load L and AC power supply P via fixed resistor R0 It is connected to four bridge components R1-R4. First, in the equivalent circuit diagram shown in FIG. 3, the following formula (3-1) to the following formula (3-3) are established, and the voltage V-D between the voltage VC-D between the points CD and the point BA- A is proportional (refer to the following formula (3-1) to the following formula (3-3)). VB-A can be set to be proportional to the load voltage.

The respective resistance values when the magnetic field H=0 are set to R1, R2, R3, and R4. According to the design, each resistance value can be regarded as approximately the same value, and can be set to R1=R2=R3=R4=R. Due to the planar Hall effect, the resistance of the components placed physically in parallel changes in the same manner with respect to the magnetic field. Therefore, R1 → R - ΔR and R3 → R - ΔR can be set depending on the magnetic field. For the same reason, R2 → R + ΔR and R4 → R + ΔR can be used.

Here, ΔR is proportional to I due to the planar Hall effect. R is a value inherent to the substance, and k is a proportionality constant, and can be set to -ΔR/R=kI. Also, it is simply set to VB-A=V. Thus, it is as described in the following formula (3-3).

V _CD = k I. V (3-3)

Moreover, the degree of imbalance of the above resistors is proportional to the load current. Therefore, the voltage VCD between C-D is proportional to the load current. Therefore, the voltage VC-D between the C-Ds is proportional to the power consumed by the load.

Thus, in the case of a full bridge circuit, the output is the product of the amount of change in resistance caused by the load current and the load voltage. Therefore, Equation (3-1) to Equation (3-3) indicate that the output is A value directly proportional to the power signal IV. Therefore, by multiplying the appropriate constant 1/k, the power information (I‧V) can be obtained from the voltage VC-D between the C-Ds.

On the other hand, FIG. 4A and FIG. 4B show a comparative example. Fig. 4A shows a case where a single resistor is used, and Fig. 4B shows a case where a half bridge circuit is used. In the case of using a single resistor, when it is solid When the constant resistance is R and the resistance component of the magnetic thin film is R1, the voltage Vm across the resistance component R1 of the magnetic thin film is as follows.

Here, R1 is proportional to the load current, but Vm is not proportional to the power. Even when the load current is 0, if V ≠ 0, the output Vm is Vm ≠ 0.

On the other hand, as shown in FIG. 4B, a case where a half bridge circuit is used is considered. When a half bridge circuit is used, when the two resistance components of the magnetic thin film are R1 and R2, the output voltages V1 and V2 at both ends of the two resistance components R1 and R2 are as follows.

In the half bridge circuit, the output is proportional to the product of the value of the load and the load voltage, which is a value obtained by adding the amount of change in resistance caused by the load current to the center value of the magnetic thin film resistor. Therefore, the output contains no dependencies At the load current term (0.5V), the output value does not become the power value.

In general, kI<0.01, the power information in V1 is 1/50 or less, and even if only the power signal is extracted by signal processing, there is a problem that the S/N ratio becomes extremely small. Here, k is a proportionality constant.

Thus, it is known that in the case of a single resistor or in the case of a half bridge, the power signal cannot be directly extracted. On the other hand, when the full bridge circuit of the present invention is used, the output is the product of the amount of change in resistance caused by the load current and the load voltage, and therefore, the output directly becomes a power signal. Therefore, it is known that the power component can be easily extracted.

Next, the power measuring device of the present invention preferably includes a magnetic field applying unit that applies a direct current magnetic field to the magnetic thin film in one direction.

Fig. 5 is an explanatory view showing a magnetization direction. When a bias magnetic field (Hb) is applied by a magnetic field applying unit such as a magnet or the like, the magnetization (J) in the magnetic film [four components] becomes an applied bias magnetic field (Hb) and a measuring magnetic field. The sum of (Hex), the measured magnetic field (Hex) is a magnetic field generated according to the measured current. The magnetization (J) depends on the bias magnetic field Hb (excluding the spontaneous magnetic field) and the measurement magnetic field Hex (external magnetic field).

Magnetization (J)=Hb+Hex (6)

However, for the resistance value of the magnetic film, as shown in the explanatory diagrams of FIGS. 6A and 6B, the four magnetic film components from R1 to R4 are considered. In the case of the constructed bridge, when the angle between the current i and the magnetization J is θ, Rmr=R+ΔRcos2θ, it is known that when θ is 0, the resistance value of the resistor Rmr is the largest, when θ is At 90 degrees, the resistance of the resistor Rmr is the smallest.

7A and 7B show a case where only a bias magnetic field is applied to the bridge formed by the four magnetoresistive components of R1 - R4, and a case where a measurement magnetic field is applied together with the bias magnetic field, and the direction of the measured magnetic field is The direction of the bias magnetic field is 90°. The measuring magnetic field is the magnetic field generated by the measuring current.

Moreover, FIG. 8 shows a change in the resistance value with respect to a change in the measured magnetic field strength from the outside. When R1 is Hex=0, the direction of the magnetization vector J is the same direction as the bias magnetic field Hb. At this time, the angle of the current flowing into R1 and the magnetization vector is 45°, and Rmr=R+0.5ΔR. If the measurement current flows and a magnetic field is applied in the positive direction of Hex of FIG. 7B, the magnetization direction J is gradually inclined from the Hb direction toward the Hex direction. As the slope becomes larger, the angle θ formed by the current flowing in R1 and the magnetization direction J becomes larger, and the resistance value of R1 decreases. When Hex is equal to Hb, the angle between the magnetization direction J and the current flowing in R1 is 90°, Rmr=R, and the resistance value takes a minimum value. When a stronger Hex is applied, the angle between the magnetization direction J and the current flowing in R1 exceeds 90°, and therefore, the resistance value rises. The measured current flows in the opposite direction. On the other hand, when a magnetic field in the -Hex direction is added, as the absolute value of -Hex increases, the magnetization direction J is inclined from the Hb direction toward the -Hex direction, and the resistance value rises. When Hb=∣-Hex∣, the magnetization direction J is parallel to the direction of the current flowing into R1 (θ=0), and the maximum value of the resistance value Rmr=R+ΔR. If the absolute value of -Hex is further increased, the magnetization direction J Further, the angle toward the -Hex side is increased, and the direction of the current flowing in R1 and the angle formed by the magnetization direction J are enlarged, and the resistance value becomes small. Since the direction of the current flowing into R3 is the same as the direction of the current flowing into R1, the same resistance change as R1 is exhibited with respect to Hex. Since the direction of the current flowing into R2 and R4 is different from the direction of the current flowing into R1 by 90°, the resistance change opposite to R1 is exhibited with respect to Hex.

As described above, the four sections forming the bridge are configured such that the angle formed by the longitudinal direction of each section and the longitudinal direction of the adjacent section satisfies the relationship of 90°, and the primary conductor is along A bias magnetic field is applied in a direction in which the generated magnetic field is substantially orthogonal, whereby the output can be increased.

In this way, since the magnetic field applying unit includes the magnetic field applying unit in a direction to apply the direct current magnetic field to the magnetic thin film having the bridge structure, the magnetization direction of the magnetic thin film can be easily controlled, the output becomes large, and the magnetic field is applied. Linear. In addition, according to the above configuration, it is only necessary to apply a DC magnetic field in one direction. Therefore, it is only necessary to apply a magnetic field applying unit to the magnetic thin films of the four sections formed by the bridge, and the apparatus of the electric power measuring apparatus can be used. The composition is simplified. On the other hand, in the case of the thin film electric power meter of Non-Patent Document 2 described above, it is necessary to change the direction of the measurement magnetic field for each adjacent element, or it is necessary to bend the primary conductor. Become complicated.

Further, a DC magnetic field larger than the magnetic field generated by the AC element current is provided, whereby fluctuations in the output across the film can be suppressed.

(Embodiment 1)

The electric power measuring device according to the first embodiment will be described. Fig. 10 is a top view showing a magnetic field sensor used in the electric power measuring device, and Fig. 11 is a cross-sectional view. Figure 11 is a cross-sectional view taken along line X1-X1 of Figure 10; As shown in FIG. 10 and FIG. 11, the magnetic field sensor 100 includes two kinds of conductor patterns, and a conductor pattern is formed by forming a ruthenium oxide film on the surface of the substrate 1 including silicon as the insulating film 2, and the insulating film 2, four meander patterns Rm1, Rm2, Rm3, and Rm4 including the magnetic thin film 3 having ferromagnetic characteristics are formed, and the power supply portions 5A and 5B are formed along the radial direction of the meander pattern, and the other conductor pattern is As the conductor patterns of the detecting portions 5C and 5D, the detecting portions 5C and 5D are formed in a direction orthogonal to the direction of the element current supplied from the feeding portions 5A and 5B. Further, pads 10A, 10B, 10C, and 10D are provided at the tips of the respective conductor patterns.

That is, as shown in the principle explanatory diagram of Fig. 2, the points A and B are referred to as energization portions, and the points A and B are symmetrical with respect to the center of the pattern of the four magnetic thin films 3 forming the bridge structure. And on the periphery of the ferromagnetic thin film pattern, the line segment AB is set to the direction in which the element current is supplied, and the line segment CD is set as the output extraction direction, that is, the detection direction, the line segment CD is orthogonal to the above direction AB, and passes through the center of the circle . Here, the line segment connecting the power supply units 5A and 5B that supply the element current is orthogonal to the line segment connecting the detection units 5C and 5D.

Here, in addition to the ferromagnetic film of a single-layer structure, an antiferro (coupling) type film (high-coercive-forced ferromagnetic body/non-conductor) constructed from (strong magnetic/non-magnetic conductor) Inductive ferrite (non-coupling) type film constructed of magnetic conductor/low coercive force ferromagnetic material, spin valve constructed of (semi-strong magnetic body/ferromagnetic body/non-magnetic conductor/ferromagnetic body) A thin film is selected from a valve type film and a non-solid solution type film of a Co/Ag system to form a magnetic film. Further, gold, copper, aluminum, or the like can be used as the conductor pattern.

Next, the manufacturing steps of the above magnetic field sensor will be described.

A ruthenium oxide film as the insulating film 2 is formed on the surface of the ruthenium substrate as the substrate 1, and a magnetic thin film 3 is formed on the upper layer of the insulating film 2 by a sputtering method. Next, the magnetic thin film 3 is patterned by photolithography to form four meandering streams of the same shape such that the directions of the main patterns of the meandering shape patterns adjacent to each other are shifted by 90 degrees. Shape pattern.

Then, a conductor thin film such as gold is formed by sputtering, and patterning is performed by photolithography to form power supply portions 5A and 5B and detection portion 5C as shown in FIGS. 10 and 11 . , 5D. Further, the pads 10A, 10B, 10C, and 10D are formed at positions corresponding to the power supply unit and the detection unit.

Next, a protective film is formed as needed, thereby completing the magnetic field sensor.

Here, the meander shape pattern has a width W of 10 μm and a length L of 1 mm. The meander shape pattern is configured in the above manner, whereby the current direction in the main pattern is two directions in one meander shape pattern. That is, as shown in the enlarged view of the main part of FIG. 12, the main patterns become 90 degrees out of each other. A combined pattern of patterns of directions. Therefore, the pattern length is directly associated with an increase in Rm1.

As described above, according to the power measuring device of the present embodiment, since the blocks of the magnetic thin film constituting the magnetic field sensor are in the meander shape pattern, not only the width of the magnetic film is reduced but also the pattern length is increased. . Therefore, since the above pattern length is directly associated with an increase in pattern resistance, the resistance is increased and the output can be increased.

In order to confirm the output characteristics of the above magnetic field sensor, an experiment was performed using the measuring device shown in FIG. The AC power supply 507 is supplied to the power supply portions A, B of the magnetic field sensor 501 shown in FIG. 13 via the transformer 506 and the resistor 505, and an oscilloscope 504 as a display portion is passed through an amplifier 502. And connected to the detecting portions C, D of the magnetic field sensor 501. 503 is a stabilized power supply. Furthermore, the above-described measuring device is housed in a casing 500 made of iron. Here, the element substrate on which the above-described element is mounted is placed vertically, and the distance between the element and the current line to be measured is set to be about 3 mm.

According to the current value obtained in the above manner and the element output voltage, there is no offset other than the offset caused by the amplifier, and the reliability is high.

Further, in the above-described embodiment, the measurement using the element substrate arranged in the vertical direction has been described. However, the measurement may be performed by placing the wire to be measured on the element substrate.

Further, in the above embodiment, it is preferable that the line width in each of the meander shape patterns is a fixed line width. When the above line width is not fixed, it is also effective to adopt the following method, for example, in such a manner that the resistance values are symmetrical. The film thickness is adjusted, or a supplementary pattern is added.

Further, since the magnetic thin film has a bridge structure of a meander shape pattern and has a symmetrical shape, it is easy to form the magnetic thin film so as to be symmetrical with respect to the element current direction, thereby providing a highly reliable magnetic field sensor.

Further, when the magnetic thin film has a meander shape, the width of the magnetic thin film is reduced, and the electric resistance is increased, so that the electric resistance value can be increased without increasing the outer shape of the element, and the output can be increased.

Further, the four sections forming the bridge are configured such that the angle formed by the longitudinal direction of each section and the longitudinal direction of the adjacent section satisfies a relationship of 90°. Therefore, in the adjacent sections, the resistance changes inversely, and the imbalance of the resistance value is most efficiently caused, so that the output can be increased.

Here, as shown in FIG. 14, the magnetic film 3 is preferably covered with a protective film 11 such as an epoxy resin. According to the above configuration, the magnetic powder which is likely to adhere to the surface by the magnetic force does not directly adhere to the magnetic thin film 3, whereby the output characteristics can be stabilized.

Further, in the power measuring device described above, the input/output pads 10A-10D of the magnetic field sensor are disposed at four corners of the package, whereby the terminals can be separately formed inside the package, and insulation can be ensured. .

In the present embodiment, the measurement magnetic field is not applied. However, as shown in the following embodiment, the measurement magnetic field is applied to the electric power measurement device according to the first embodiment in one direction, whereby the electric power can be measured more stably.

(Embodiment 2)

Next, a second embodiment of the present invention will be described. This embodiment The electric power measuring device is characterized in that a magnet 300 constituting a magnet element is disposed as a magnetic field applying unit that applies a DC magnetic field to the magnetic thin film 3 in one direction. The magnetic field sensor chip 100 is the same as the magnetic field sensor wafer 100 of the above-described first embodiment shown in FIG. 10, and the magnetic thin film including the meander shape pattern is connected so as to form a bridge structure. The arrow Hb is a bias magnetic field generated by the above magnet.

Here, as shown in the schematic view of FIG. 15A, in order to apply a magnetic field in a direction substantially orthogonal to the magnetic field generated by the primary conductor I1, a pair of both sides of the magnetic thin film 3 of the magnetic field sensor wafer 100 is used. Magnet 300 holds the magnetic field sensor wafer 100. Here, the magnet element, that is, the magnet, is formed in the width direction to be larger than the package of the above-described magnetic field sensor. Here, as shown in the partial fracture schematic view of FIG. 15B, the measurement magnetic field of the magnetic field sensor wafer 100 is formed to be parallel to the pattern surface of the magnetic film.

According to the above configuration, the bias magnetic field is uniformly applied by the DC magnetic field applied by the magnet 300, and the output characteristics can be stabilized. Further, a magnetic field having uniformity and high strength can be applied to the magnetic thin film 3 without increasing the volume of the magnet.

Further, since the magnetization direction is controlled by applying a bias magnetic field to the magnet, even when a large current such as an inrush current is applied, the magnetization reversal is not caused, and the measurement can be stably performed. Further, it is preferable to use a ferromagnetic film as the magnetic film here.

(Embodiment 3)

Next, a third embodiment of the present invention will be described. The power measuring device of the present embodiment is characterized by: magnetic field with the magnetic field sensor wafer 100 The magnets 300 are arranged in parallel with the formation surface of the thin film 3.

Here, as shown in the top view of FIG. 16A and the cross-sectional view of FIG. 16B, in order to apply a magnetic field in a direction substantially orthogonal to the magnetic field generated by the primary conductor 11, the magnetic field is sensed in such a manner that the magnetic field is sensed. The wafer 100 is placed on a magnet 300, which is a magnet element, so that the magnetic field is parallel to the magnetic film 3. Here, the magnet is formed in the width direction to be larger than the package of the above-described magnetic field sensor.

According to the above configuration, in addition to the effects of the second embodiment, since one magnet can be used, cost reduction can be achieved. Further, it is preferable to use a ferromagnetic film as the magnetic film here.

(Embodiment 4)

Next, a fourth embodiment of the present invention will be described. The power measuring device according to the present embodiment is characterized in that a yoke 210 as a magnetic fluxing portion is disposed in addition to the configuration of the above-described third embodiment. In the power measuring device of the present embodiment, the magnet 300, which is a magnet element, is disposed in parallel with the surface on which the magnetic thin film 3 of the magnetic field sensor wafer 100 is formed.

That is, as shown in the top view of FIG. 17A and the cross-sectional view of FIG. 17B, a yoke 210 as a magnetic fluxing portion is disposed in the vicinity of the magnetic pole of the magnet 300, and a magnetic field sensor wafer 100 is disposed between the yokes 210.

According to the above configuration, in addition to the effects of the third embodiment, since the magnetic flux is attracted by the yoke, the amount of leakage of the magnetic flux leaking into the air is small, and even if the magnet is small, a large magnetic field of bias can be applied. Since one magnet can be used, cost reduction can be achieved. Further, it is preferable to use a ferromagnetic film as the magnetic film here.

(Embodiment 5)

Next, a fifth embodiment of the present invention will be described. The electric power measuring device according to the present embodiment is characterized in that the magnet 300 is formed by a pair of magnets 300 so as to be parallel to the surface on which the magnetic thin film 3 of the magnetic field sensor wafer 100 is formed and sandwiched between the magnetic thin films 3.

Here, as shown in the top view of FIG. 18A and the cross-sectional view of FIG. 18B, a pair of magnets 300 are disposed so as to sandwich the magnetic thin film in parallel.

According to the above configuration, in addition to the effects of the above-described third embodiment, a more uniform bias magnetic field can be applied. Further, it is preferable to use a ferromagnetic film as the magnetic film here.

(Embodiment 6)

Next, a sixth embodiment of the present invention will be described. In the electric power measuring device according to the fifth embodiment, the yoke 210 as the magnetic fluxing portion is provided between the magnetic poles of the same polarity in the magnet 300 of the electric power measuring device according to the fifth embodiment. In the measuring device, the magnet 300 is disposed in parallel with the surface on which the magnetic thin film 3 of the magnetic field sensor wafer 100 is formed.

Here, as shown in the top view of FIG. 19A and the cross-sectional view of FIG. 19B, a yoke is disposed in a frame shape between the pair of magnets 300, which are magnet elements, and in the vicinity of the magnetic poles of the pair of magnets 300. 210. A magnetic field sensor wafer 100 including a magnetic thin film 3 is disposed between the pair of magnets and the yoke 210.

According to the above configuration, in addition to the effects of the third embodiment, since the magnetic flux is attracted by the yoke, even if the magnet is small, a large strength can be applied. The bias magnetic field. Further, it is preferable to use a ferromagnetic film as the magnetic film here.

(Embodiment 7)

Next, a seventh embodiment of the present invention will be described. The electric power measuring device according to the present embodiment is characterized in that the magnetic field sensor is formed on the same substrate as the magnetic field applying unit. 20A and 20B are a schematic top view and a schematic cross-sectional view of the electric power measuring device.

Preferably, for example, the magnetic thin film 3 constituting the magnetic field sensor is formed on the substrate 1G, and the magnetic field applying unit includes the second magnetic thin film 6, and the second magnetic thin film 6 is formed in parallel with the magnetic thin film. On the substrate 1G, the second magnetic thin film 6 is located outside the outer edge of the magnetic thin film. Further, it is preferable to use a ferromagnetic film as the magnetic film here.

A glaze-processed glass substrate is used as the substrate. Further, a magnetic thin film 3 and a permanent magnet are formed on the glass substrate 1G, and the magnetic thin film 3 is formed of a meander shape pattern including a NiCo thin film, and the permanent magnet serves as the magnetic field applying unit 6 and includes NdFeB.

According to the above configuration, not only can the size and thickness be reduced, but also the magnetic flux does not pass through the wiring portion, so that the electric power can be measured more stably.

(Embodiment 8)

Next, an eighth embodiment of the present invention will be described. As shown in FIG. 21A and FIG. 21B, the power measuring device according to the present embodiment includes two second magnetic thin films 6a and 6b as magnetic field applying means, and the two second and second The magnetic thin films 6a and 6b are formed on the glass substrate 1G on which the magnetic field sensor is formed, and constitute the magnet element 6. Further, the magnet element 6 is configured such that the first magnetic film 3 constituting the meander shape pattern is sandwiched between the second magnetic films 6a and 6b via the insulating film 2.

According to the above configuration, it is possible to easily provide an output measuring device which can be formed by a thin film process, which is small and highly reliable. Moreover, according to the above configuration, it is possible to achieve high output, miniaturization, and thickness reduction.

In the first embodiment to the eighth embodiment, the magnetic field sensor includes a wafer component and is mounted on a printed wiring board constituting the circuit board. However, the magnetic field sensor may be formed on the printed wiring board 1 or the glass substrate 1G constituting the circuit board. The pattern of the direct magnetic thin film 3 is formed by the same steps as the wiring pattern to form a conductor pattern constituting the power supply portion and the detecting portion. Moreover, the amplifier or A/D converter, central processing unit (CPU) contains wafer parts. Alternatively, the processing circuit may be integrated on the germanium substrate, and a magnetic field sensor may be formed via the insulating film to form a monolithic component.

According to the above configuration, it is possible to further reduce the thickness and size.

Further, of course, in the power measuring device described in the first to eighth embodiments, a monolithic element in which a magnetic thin film and a magnet serving as a magnetic field applying unit are formed on the same substrate can be used. The components. Further, it is preferable to use a ferromagnetic film as the magnetic film here.

In the above power measuring device, a magnetic film is also formed on the substrate. Thereby, the magnetic field sensor and the processing circuit can be integrated on the substrate, and the thickness and size can be further reduced.

Further, in the power measuring device described above, the magnetic field sensor may be configured by using a magnetic field sensor including: a magnetic film formed on the substrate; and a power supply portion having a component current supplied to the magnetic field The input/output terminal of the film; and the detecting electrode portion detect the output of both ends of the magnetic film, and the wiring pattern includes the same conductor layer as the feeding portion and the detecting electrode portion.

According to the above configuration, in addition to the configuration of the normal circuit board, only the pattern of the magnetic thin film can be formed, and therefore, it can be formed extremely easily.

Moreover, in the above-described electric power measuring device, it is preferable to form a magnetic thin film so that the magnetic resistance is symmetrical with respect to the supply direction of the element current. Here, the structure in which the magnetic resistance is symmetrical can be obtained by a magnetic thin film pattern having the same resistance value and the same shape.

According to the above configuration, since the magnetic thin film is formed so that the magnetic resistance is symmetrical with respect to the direction of the element current, the maximum value of the sensor output Vmr can be obtained largely, and the S/N ratio of the system is improved.

Further, the power measuring device may include a capacitor connected in parallel to the detecting portion.

According to the above configuration, the Vmr signal is smoothed by the capacitor, whereby the DC component can be extracted in a short period of time that is insufficient, so that the power value can be obtained at a high speed, and the DC can be obtained by a simple circuit configuration. The ingredients are tested.

Also, using the above-described power measuring device, the magnetoresistance is relative to the component current The direction of the element is symmetrical, and the element current is supplied to the pattern of the magnetic thin film, and the DC component of the output due to the supply of the element current is extracted and set as the power information.

According to the above configuration, the measurement can be easily performed without separately measuring the power factor, and the error is also reduced as compared with the case of multiplication.

Further, the magnetic field sensor may further include: a magnetic film; a power supply unit having an input/output terminal for supplying a component current to the magnetic film; and a detecting portion for the magnetic film in a direction orthogonal to a supply direction of the element current ( The voltage between the ends is detected to form a magnetic thin film in such a manner that the magnetic resistance is symmetrical with respect to the direction of the element current.

According to the above configuration, the output direction of the magnetic thin film is set to be a direction orthogonal to the element current direction, and the magnetic thin film is formed so that the magnetic resistance is symmetrical with respect to the direction of the element current, whereby the direction can be reversed The positive and negative are judged, and when the magnetic field is not applied, the offset disappears, so that the circuit configuration can be simplified.

Further, in the magnetic field measuring method of the power measuring device according to the present invention, the element current is supplied to the pattern of the magnetic thin film so as to be orthogonal to the supply direction of the element current so that the magnetic resistance is symmetrical with respect to the direction of the element current. In the direction of the magnetic film, the voltage of the magnetic film (between the ends) is detected, thereby measuring the magnetic field strength.

Further, it is preferable to use a ferromagnetic film as the magnetic film here.

(Embodiment 9)

Furthermore, in the above embodiment, a magnetic field sensor including a magnetic thin film using a meander shape pattern is described. The film is not limited to the meander shape pattern. Hereinafter, examples other than the meander shape pattern will be described.

As shown in FIG. 22 to FIG. 24, the present embodiment is characterized in that the auxiliary pattern 4 of the ferromagnetic thin film is formed along the inner circumference of the ring of the magnetic thin film 3 as a circular internal magnetic film having a similar shape, and the magnetic thin film 3 constitutes a ring pattern of the magnetic field sensor of the present invention described before the description of the first embodiment.

Only the above-described auxiliary pattern 4 is added as a configuration, and other configurations are the same as those of the above-described first embodiment, and description thereof will be omitted. Attach the same symbol to the same part. Here, Fig. 22 is a schematic explanatory view of the above-described magnetic field sensor, Fig. 23 is a top view, and Fig. 24 is a cross-sectional view. The magnetic field sensor is basically the same as the example shown in FIG. 1. However, since the auxiliary pattern 4 is present, the magnetic sensitivity is improved in a state where the electric resistance is improved. Since the outer annular pattern (3) is not in electrical contact with the internal auxiliary pattern 4, the electric resistance is the same as that of the magnetic field sensor according to the first embodiment described above. However, since the space portion is filled with the magnetic thin film, the space portion is filled with the magnetic thin film. It can guide more magnetic fluxes, so that high sensitivity can be achieved.

As described above, according to the present embodiment, since a space is formed between the magnetic bodies, the sensitivity to the external magnetic field is lowered. Therefore, in the state where the electric resistance is improved, in order to improve the magnetic sensitivity alone, the internal magnetic thin film is electrically provided independently, whereby the high sensitivity can be further achieved.

Further, as the element structure, as shown in the modification of FIG. 25, after the magnetic thin film pattern is formed, the entire substrate surface is covered with a protective insulating film 16 containing a polyimide resin, and the through hole is interposed. (through The power supply units 5A and 5B and the detection units 5C and 5D are formed. According to the above configuration, deterioration of the magnetic thin film can be prevented, and a highly reliable magnetic field sensor can be provided.

Further, the auxiliary pattern formed inside the annular pattern may include the same material, and as shown in FIG. 26, the auxiliary pattern 24 may be formed using a magnetic thin film containing another material.

The magnetic film including the same material as the magnetic film is used to form an internal magnetic film, that is, a supplementary pattern, whereby a magnetic field sensor can be provided, which is easy to manufacture, only changes in pattern, high sensitivity and reliability high.

Further, the magnetic film different from the magnetic film is used to form an internal magnetic film, that is, a supplementary pattern, whereby the sensitivity can be adjusted. Further, when a plurality of magnetic field sensors are arranged side by side, in order to make the sensitivity uniform, the material of the internal magnetic thin film is adjusted, whereby the sensitivity can be adjusted.

Further, in addition to an inorganic film such as a ruthenium oxide film or alumina, an organic film such as a polyimide resin or a phenol resin may be used as the protective film. Further, it is preferable to use a ferromagnetic film as the magnetic film here.

(Embodiment 10)

Next, a tenth embodiment of the present invention will be described. In the present embodiment, as shown in FIGS. 27 and 28, the ferromagnetic thin film includes a square annular pattern 33, and the power supply portions 5A and 5B are provided so that current flows in the diagonal direction of the square. The detecting portions 5C and 5D are formed along a direction orthogonal to the above-described feeding portions 5A and 5B.

In the present embodiment, only a square annular pattern 33 is formed. The ring pattern 3 of the magnetic field sensor according to the first embodiment described above is the same as that of the first embodiment, and the description thereof is omitted. Attach the same symbol to the same part. Here, Fig. 27 is a schematic explanatory view of the above-described magnetic field sensor, and Fig. 28 is a top view.

Here, the magnetic flux density vector is a composite vector of the spontaneous magnetization vector M and the measured magnetic field vector H of the element, and when there is no external measurement magnetic field, the magnetic flux density vector becomes the direction of the spontaneous magnetization vector. When the measurement magnetic field is an alternating magnetic field, the measurement magnetic field is centered on the spontaneous magnetization vector and vibrates in the up and down direction of the figure.

According to the above configuration, the output Vmr of the sensor can be expressed by the following equation.

However, similarly to the above, the angle formed by the current density vector and the magnetic flux density vector is θ1 and θ2, and the angle formed by AB and AC and AB and AD is φ, and the AC when there is no magnetic field is measured. The voltage between them is set to VAC0, the voltage between AD is set to VAD0, and the maximum value of the voltage change caused by the magnetoresistance effect is set to ΔVr.

And when V _Ac0 =V _AD0

When 2 = 90 degrees to get the maximum value.

_{Vmr = Δ Vr cos2 θ 1 -Δ} Vr cos2 (θ 1 -90 °) = Δ Vr cos2 θ 1 -Δ Vr cos (2 θ 1 -180 °) = Δ Vr cos2 θ 1 + Δ Vr cos2 θ 1 = 2Δ Vr cos2 θ ₁ (10)

The circular ring shape, that is, the ring shape, can be expressed by substantially the same formula, but in the case of a ring shape, the direction of the current density vector changes between A to C and A to D. Since there is also a component having a maximum output of φ=45 degrees, the output becomes smaller as compared with the square.

Further, in the above embodiment, the magnetic thin film is formed by a sputtering method, but the present invention is not limited to the sputtering method, and the magnetic thin film may be formed by a vacuum deposition method, a coating method, a dipping method, or the like. .

In addition to the semiconductor substrate such as ruthenium, an inorganic substrate such as sapphire, glass, or ceramic, or an organic substrate such as a resin may be used as the substrate. especially It is preferable to use a substrate which is excellent in flexibility and light in thickness in the above-mentioned substrate, and for example, a substrate similar to a plastic film widely used as a printed wiring board or the like can be used. More specifically, various materials well known, such as polyimine, polyethylene terephthalate (PET), polypropylene (PP), and teflon (teflon) can be utilized ( Registered trademark) as a plastic film material. By using a flexible substrate, it is possible to arrange it so that the sensitivity is higher, for example, to surround the electric wire to be measured. Further, in consideration of bonding by soldering, a polyimide film having high heat resistance can also be used. Further, the thickness of the substrate is not particularly limited, but the thickness is preferably about 1 μm to 300 μm.

Further, a magnetic thin film pattern may be directly formed on a substrate such as a glass substrate to form a magnetic field sensor, but a wafer may be temporarily formed, and then a wire bonding method or a flip chip method may be used. The wafer is mounted on a glass substrate, a printed wiring board, or the like. Further, a processing circuit is also included in the wafer and integrated, whereby a magnetic field sensor with higher accuracy and high reliability can be provided.

Further, the present invention is not limited to the above embodiment, and the output direction of the magnetic thin film is set to be a direction orthogonal to the supply direction of the element current, and the magnetic resistance is symmetrical with respect to the direction of the element current. The magnetic film can be applied, and since the positive and negative directions can be determined, and the offset disappears when no magnetic field is applied, the circuit configuration can be simplified. Further, in the above embodiment, a magnetic field sensor is used. The magnetic field sensor uses a ferromagnetic thin film, but is not limited thereto. Use other magnetic field sensors.

Further, from the viewpoint of high sensitivity, it is preferable to form the ferromagnetic thin film so that the magnetization direction coincides with the direction of the element current.

As described above, the magnetic field sensor according to the present invention can detect the magnetic field strength with high precision, and thus can be applied to a current sensor, a power sensor, or the like.

Further, according to the power measuring device of the present invention, even when the power factor is not 1, or even if the load contains a harmonic current, the electric power can be accurately measured, and a current sense such as a current transformer or the like can be used. The previous power measuring device of the measuring device can be reduced in size and cost, and thus can be applied to various energy saving tools.

1‧‧‧Substrate

1G‧‧‧Substrate/Glass Substrate

2‧‧‧Insulation film

3‧‧‧(strong) magnetic film/magnetic film

4, 24‧‧‧ auxiliary patterns

5A, 5B, A, B‧‧‧ Power Supply Department

5C, 5D, C, D‧‧‧Detection Department

6‧‧‧Magnetic element / 2nd magnetic film

6a, 6b‧‧‧2nd magnetic film

10A~10D‧‧‧ pads

11‧‧‧Protective film

16‧‧‧Protective insulation film

33‧‧‧Circular pattern

100‧‧‧Magnetic field sensor/magnetic field sensor chip

200‧‧‧conductor

210‧‧ y yoke

300‧‧‧ magnet

500‧‧‧ Shell

501‧‧‧Magnetic field sensor

502‧‧Amplifier

503‧‧‧Stabilized power supply

504‧‧‧ oscilloscope

505‧‧‧resistance

506‧‧‧Transformer

507, P‧‧‧ AC power supply

BM0‧‧‧Magnetic beam density vector

H‧‧‧Measured magnetic field vector

Hb‧‧‧bias magnetic field/arrow

Hex‧‧‧measuring magnetic field

I‧‧‧current

I1‧‧‧current/primary conductor

I2‧‧‧ component current

J‧‧‧ Magnetization/magnetization vector/magnetization direction

L‧‧‧Length/load

M‧‧‧Spontaneous magnetization vector

R‧‧‧Intrinsic value of resistance/material

R0‧‧‧ fixed resistor

R1~R4‧‧‧Bridge component/resistance component

Rm1~Rm4‧‧‧qu flow pattern

VCD‧‧‧ voltage

Vmr‧‧‧ sensor output

W‧‧‧Width

X1-X1‧‧‧ profile

Θ1, θ2, φ‧‧ corner

The object and features of the present invention will become apparent from the following description of the preferred embodiments of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic explanatory view of a power measuring device of the present invention.

Fig. 2 is an equivalent circuit diagram of the above power measuring device.

Fig. 3 is an explanatory diagram of a principal part of an equivalent circuit of the above-described electric power measuring device.

4A and 4B are explanatory views showing a comparative example, in which Fig. 4A is a view showing a case where a single resistor is used, and Fig. 4B is a view showing a state in which a half bridge circuit is used.

Fig. 5 is an explanatory view showing a magnetization direction.

6A and 6B are explanatory views of the magnetoresistance effect.

7A and 7B show that θ is 0 with respect to the bridge. An explanatory diagram of a measurement current when a bias magnetic field is present and a bias magnetic field having a θ of 90 degrees.

Fig. 8 is a view showing a relationship between a measured magnetic field and a resistance value in the power measuring device.

Fig. 9 is a view showing a relationship between a measured magnetic field strength and an element output voltage in the power measuring device.

Fig. 10 is a top plan view of the electric power measuring device according to the first embodiment of the present invention.

Fig. 11 is a cross-sectional view showing the electric power measuring device according to the first embodiment of the present invention.

FIG. 12 is an enlarged view of an essential part of a magnetic thin film pattern of a magnetic field sensor of the electric power measuring device according to Embodiment 1 of the present invention.

FIG. 13 is a circuit explanatory diagram showing a measuring device for measuring the element characteristics of the magnetic field sensor of the electric power measuring device according to the first embodiment of the present invention.

FIG. 14 is a cross-sectional view of a main part of a magnetic field sensor of the electric power measuring device according to Embodiment 1 of the present invention.

15A and 15B are views showing the arrangement of magnets of the electric power measuring device according to the second embodiment of the present invention, wherein Fig. 15A is a schematic cross-sectional view, and Fig. 15B is a partial broken view of the magnetic field sensor.

16A and 16B are views showing the arrangement of magnets of the electric power measuring device according to Embodiment 3 of the present invention, wherein Fig. 16A is a top view, and Fig. 16B is a cross-sectional view of the magnetic field sensor.

17A and 17B are diagrams showing electric power measurement according to a fourth embodiment of the present invention. A diagram of the configuration of the magnet of the apparatus, wherein Fig. 17A is a top view, and Fig. 17B is a cross-sectional view of the magnetic field sensor.

18A and 18B are views showing the arrangement of magnets of the electric power measuring device according to Embodiment 5 of the present invention, wherein Fig. 18A is a top view, and Fig. 18B is a cross-sectional view of the magnetic field sensor.

19A and 19B are views showing the arrangement of magnets of the electric power measuring device according to Embodiment 6 of the present invention, wherein Fig. 19A is a top view, and Fig. 19B is a cross-sectional view of the magnetic field sensor.

20A and 20B are views showing the arrangement of magnets of the electric power measuring device according to Embodiment 7 of the present invention, wherein Fig. 20A is a top view, and Fig. 20B is a cross-sectional view of the magnetic field sensor.

21A and 21B are views showing the arrangement of magnets of the electric power measuring device according to Embodiment 8 of the present invention, wherein Fig. 21A is a top view, and Fig. 21B is a cross-sectional view of the magnetic field sensor.

Fig. 22 is a schematic explanatory diagram of a magnetic field sensor of the electric power measuring device according to Embodiment 9 of the present invention.

Fig. 23 is a top plan view showing a magnetic field sensor of the electric power measuring device according to Embodiment 9 of the present invention.

Fig. 24 is a cross-sectional view showing a magnetic field sensor of the electric power measuring device according to Embodiment 9 of the present invention.

Fig. 25 is a cross-sectional view showing a magnetic field sensor of the electric power measuring device according to Embodiment 9 of the present invention.

FIG. 26 is a view showing a modification of the magnetic field sensor of the electric power measuring device according to Embodiment 9 of the present invention.

Fig. 27 is a schematic explanatory diagram of a magnetic field sensor of the electric power measuring device according to Embodiment 10 of the present invention.

Fig. 28 is a top plan view showing a magnetic field sensor of the electric power measuring device according to Embodiment 10 of the present invention.

3‧‧‧(strong) magnetic film/magnetic film

A, B‧‧‧ Power Supply Department

C, D‧‧‧Detection Department

P‧‧‧AC power supply

R0‧‧‧ fixed resistor

VCD‧‧‧ voltage

Claims (18)

A power measuring device is a power measuring device including a magnetic field sensor, the magnetic field sensor comprising: a magnetic film arranged in parallel with a primary conductor flowing with a current; and a power supply portion having a current input/output terminal, a current input/output terminal is connected to the primary conductor, and a component current is supplied to the magnetic thin film; and a detecting unit detects an output of both ends of the magnetic thin film, wherein the magnetic thin film is composed of a first magnetic component having a bridge structure The fourth magnetic component is configured to include a voltage input/output terminal, and the voltage input/output terminal is connected to an intermediate position of the current input/output terminal, and constitutes the detecting unit. The electric power measuring device according to claim 1, comprising a magnetic field applying unit that applies a direct current magnetic field to the magnetic thin film in one direction. The electric power measuring device according to claim 2, wherein the magnetic field applying unit applies a magnetic field to the magnetic thin film in a direction orthogonal to a magnetic field generated by the primary conductor. The electric power measuring device according to any one of the first to third aspects of the present invention, wherein the first magnetic body component to the fourth magnetic body component of the magnetic thin film having a bridge structure are respectively formed by a meander shape pattern Composition. The electric power measuring device according to the fourth aspect of the invention, wherein the longitudinal direction of each section of the first magnetic component to the fourth magnetic component of the bridge structure and the longitudinal direction of the adjacent section are formed. It is 90°. The electric power measuring device according to claim 2, wherein the magnetic field applying unit is a magnet. The electric power measuring device according to claim 6, wherein the magnet is composed of a pair of magnet elements, and the pair of magnet elements are disposed so as to form a magnetic field substantially parallel to the magnetic field sensor. Both sides of the above magnetic film. The electric power measuring device according to claim 6, wherein the magnet is constituted by a magnet element disposed in parallel with the surface of the magnetic film. The power measuring device according to claim 8, comprising a magnetic collecting portion disposed in the vicinity of the magnetic pole, wherein the magnetic pole is located at both ends of the magnet element disposed in parallel with the surface of the magnetic film. The electric power measuring device according to claim 8, wherein the magnet includes a pair of magnet elements, and the pair of magnet elements are disposed in parallel with the magnetic thin film forming surface and sandwiching the magnetic thin film. The power measuring device according to claim 10, wherein A magnetic flux portion is provided between the same type of magnetic poles of the pair of magnet elements. The power measuring device according to claim 6, further comprising a voltage extracting portion formed on a surface perpendicular to a magnetic pole surface of the magnet, wherein the voltage extracting portion inputs a voltage of the magnetic field sensor The voltage from the output terminal is extracted. The electric power measuring device according to any one of claims 1 to 3, wherein the primary conductor is disposed in parallel with the magnetic film, and passes through a surface of the primary conductor and the center of the magnetic film. It is perpendicular to the surface of the above magnetic film. The power measuring device according to claim 6, wherein the magnetic field sensor is formed on the same substrate as the magnetic field applying unit. The electric power measuring device according to claim 14, wherein the magnetic film constituting the magnetic field sensor is formed on the substrate, the magnetic field applying unit includes a second magnetic film, and the second magnetic film is magnetic The film is formed in parallel on the substrate, and the second magnetic film is located outside the outer edge of the magnetic film. An electric power measuring device according to claim 15, wherein The magnetic field applying unit includes a third magnetic thin film formed on the substrate, and the third magnetic thin film and the second magnetic thin film are configured to sandwich the magnetic thin film via an insulating film. The power measuring device according to claim 1, wherein the magnetic thin film is formed on the substrate. A power measuring method comprising: using the power measuring device according to any one of claims 1 to 3, such that the magnetic resistance is symmetrical with respect to a direction of the element current, by the current input The output terminal supplies the element current to the pattern of the magnetic thin film, and the DC component of the output generated by supplying the element current is extracted by the voltage input/output terminal, and is used as power information.