TWI442589B - Semiconductor device and electronic apparatus - Google Patents

Semiconductor device and electronic apparatus

Info

Publication number
TWI442589B
TWI442589B TW099142874A TW99142874A TWI442589B TW I442589 B TWI442589 B TW I442589B TW 099142874 A TW099142874 A TW 099142874A TW 99142874 A TW99142874 A TW 99142874A TW I442589 B TWI442589 B TW I442589B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
electronic apparatus
electronic
semiconductor
Prior art date
Application number
TW099142874A
Other languages
English (en)
Other versions
TW201133907A (en
Inventor
Keiichi Yamamoto
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW201133907A publication Critical patent/TW201133907A/zh
Application granted granted Critical
Publication of TWI442589B publication Critical patent/TWI442589B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors

Landscapes

  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Optical Filters (AREA)
  • Photovoltaic Devices (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
TW099142874A 2009-12-28 2010-12-08 Semiconductor device and electronic apparatus TWI442589B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009298365A JP2011138950A (ja) 2009-12-28 2009-12-28 半導体装置及び電子機器

Publications (2)

Publication Number Publication Date
TW201133907A TW201133907A (en) 2011-10-01
TWI442589B true TWI442589B (en) 2014-06-21

Family

ID=44174805

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099142874A TWI442589B (en) 2009-12-28 2010-12-08 Semiconductor device and electronic apparatus

Country Status (5)

Country Link
US (1) US8513586B2 (zh)
JP (1) JP2011138950A (zh)
KR (1) KR20110076770A (zh)
CN (1) CN102110703B (zh)
TW (1) TWI442589B (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011138950A (ja) * 2009-12-28 2011-07-14 Sony Corp 半導体装置及び電子機器
JP2013093553A (ja) * 2011-10-04 2013-05-16 Canon Inc 光電変換装置及びその製造方法、並びに光電変換システム
JP5456084B2 (ja) * 2012-02-07 2014-03-26 株式会社東芝 固体撮像素子
US8941203B2 (en) * 2012-03-01 2015-01-27 Raytheon Company Photodetector with surface plasmon resonance
US8957490B2 (en) * 2013-06-28 2015-02-17 Infineon Technologies Dresden Gmbh Silicon light trap devices
JP6398214B2 (ja) * 2014-02-17 2018-10-03 株式会社ニコン ピンホール装置及び露光装置
WO2016136502A1 (ja) * 2015-02-26 2016-09-01 ソニー株式会社 固体撮像素子、および電子装置
US9404804B1 (en) * 2015-04-02 2016-08-02 Palo Alto Research Center Incorporated Thermal sensor with infrared absorption membrane including metamaterial structure
US20190041260A1 (en) * 2016-01-25 2019-02-07 The Regents Of The University Of California Nano-scale pixelated filter-free color detector
CN108615736A (zh) * 2016-12-11 2018-10-02 南京理工大学 制作在传感器表面的可提高光传感器灵敏度的结构
CN111033760B (zh) * 2017-08-09 2023-01-03 株式会社钟化 光电转换元件和光电转换装置
CN109951661A (zh) * 2019-04-23 2019-06-28 Oppo广东移动通信有限公司 图像传感器及电子设备
CN110049261B (zh) * 2019-04-23 2022-04-12 Oppo广东移动通信有限公司 一种像素结构、图像传感器及终端
CN110087005B (zh) * 2019-04-23 2021-07-09 Oppo广东移动通信有限公司 一种彩色偏振式cis及图像处理方法、存储介质
CN110324545B (zh) * 2019-06-11 2022-01-28 Oppo广东移动通信有限公司 一种像素结构、图像传感器及终端
CN110166698A (zh) * 2019-06-28 2019-08-23 Oppo广东移动通信有限公司 对焦方法、互补金属氧化物图像传感器、终端及存储介质
CN110620861B (zh) * 2019-09-24 2021-10-15 Oppo广东移动通信有限公司 图像传感器、相机模组和终端
US11227960B2 (en) * 2020-03-16 2022-01-18 Globalfoundries U.S. Inc. Multifunctional metamaterial-based optical device
US11355540B2 (en) 2020-04-15 2022-06-07 Visera Technologies Company Limited Optical device
TWI756764B (zh) * 2020-07-31 2022-03-01 國立中興大學 光電流電極及光電免疫感測裝置
CN113270725B (zh) * 2021-05-12 2023-05-23 中国人民解放军空军工程大学 基于人工表面等离激元的超宽带、大角度掠入射吸波体
WO2023105678A1 (ja) * 2021-12-08 2023-06-15 ソニーセミコンダクタソリューションズ株式会社 光検出装置および光学フィルタ

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US5886374A (en) * 1998-01-05 1999-03-23 Motorola, Inc. Optically sensitive device and method
US6864557B2 (en) * 2001-06-18 2005-03-08 Foveon, Inc. Vertical color filter detector group and array
US7109517B2 (en) * 2001-11-16 2006-09-19 Zaidi Saleem H Method of making an enhanced optical absorption and radiation tolerance in thin-film solar cells and photodetectors
KR100791497B1 (ko) * 2002-10-11 2008-01-04 캐논 가부시끼가이샤 센서
WO2005098966A1 (ja) * 2004-04-05 2005-10-20 Nec Corporation フォトダイオードとその製造方法
US7592255B2 (en) * 2004-12-22 2009-09-22 Hewlett-Packard Development Company, L.P. Fabricating arrays of metallic nanostructures
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JP5300344B2 (ja) * 2007-07-06 2013-09-25 キヤノン株式会社 光検出素子及び撮像素子、光検出方法及び撮像方法
JP4621270B2 (ja) * 2007-07-13 2011-01-26 キヤノン株式会社 光学フィルタ
US20090040132A1 (en) * 2007-07-24 2009-02-12 Northeastern University Anisotropic metal-dielectric metamaterials for broadband all-angle negative refraction and superlens imaging
KR101385250B1 (ko) * 2007-12-11 2014-04-16 삼성전자주식회사 Ｃｍｏｓ 이미지 센서
EP2109147A1 (en) * 2008-04-08 2009-10-14 FOM Institute for Atomic and Molueculair Physics Photovoltaic cell with surface plasmon resonance generating nano-structures
US8866000B2 (en) * 2009-07-31 2014-10-21 Corey A. Weiss Ultra-efficient energy conversion device for converting light to electricity by rectifying surface plasmon polaritons
JP2011043681A (ja) * 2009-08-21 2011-03-03 Canon Inc 光学素子、光検出素子、光変調素子、撮像素子及びカメラ
JP2011138950A (ja) * 2009-12-28 2011-07-14 Sony Corp 半導体装置及び電子機器

Also Published As

Publication number Publication date
KR20110076770A (ko) 2011-07-06
JP2011138950A (ja) 2011-07-14
TW201133907A (en) 2011-10-01
CN102110703B (zh) 2014-10-29
US8513586B2 (en) 2013-08-20
US20110155891A1 (en) 2011-06-30
CN102110703A (zh) 2011-06-29

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees