TWI437115B - - Google Patents

Info

Publication number
TWI437115B
TWI437115B TW102115430A TW102115430A TWI437115B TW I437115 B TWI437115 B TW I437115B TW 102115430 A TW102115430 A TW 102115430A TW 102115430 A TW102115430 A TW 102115430A TW I437115 B TWI437115 B TW I437115B
Authority
TW
Taiwan
Application number
TW102115430A
Other languages
Chinese (zh)
Other versions
TW201341563A (zh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to TW102115430A priority Critical patent/TW201341563A/zh
Priority to CN201310280288.8A priority patent/CN103540895B/zh
Priority to JP2013140496A priority patent/JP2014015680A/ja
Priority to KR1020130079498A priority patent/KR20140007754A/ko
Publication of TW201341563A publication Critical patent/TW201341563A/zh
Application granted granted Critical
Publication of TWI437115B publication Critical patent/TWI437115B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
TW102115430A 2012-07-10 2013-04-30 濺鍍靶材及氧化金屬薄膜 TW201341563A (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW102115430A TW201341563A (zh) 2012-07-10 2013-04-30 濺鍍靶材及氧化金屬薄膜
CN201310280288.8A CN103540895B (zh) 2012-07-10 2013-07-04 溅射靶材及氧化金属薄膜
JP2013140496A JP2014015680A (ja) 2012-07-10 2013-07-04 スパッタリングターゲット及びそれにより得られる酸化金属薄膜
KR1020130079498A KR20140007754A (ko) 2012-07-10 2013-07-08 스퍼터링 타겟 및 그것에 의하여 얻어지는 산화금속 박막

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW101124757 2012-07-10
TW102115430A TW201341563A (zh) 2012-07-10 2013-04-30 濺鍍靶材及氧化金屬薄膜

Publications (2)

Publication Number Publication Date
TW201341563A TW201341563A (zh) 2013-10-16
TWI437115B true TWI437115B (ko) 2014-05-11

Family

ID=49771317

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102115430A TW201341563A (zh) 2012-07-10 2013-04-30 濺鍍靶材及氧化金屬薄膜

Country Status (4)

Country Link
JP (1) JP2014015680A (ko)
KR (1) KR20140007754A (ko)
CN (1) CN103540895B (ko)
TW (1) TW201341563A (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6501385B2 (ja) * 2014-10-22 2019-04-17 日本放送協会 薄膜トランジスタおよびその製造方法
JP6159867B1 (ja) * 2016-12-22 2017-07-05 Ｊｘ金属株式会社 透明導電膜形成用ターゲット、透明導電膜形成用ターゲットの製造方法及び透明導電膜の製造方法
CN113149612A (zh) * 2021-05-17 2021-07-23 先导薄膜材料（广东）有限公司 一种izo靶材的回收方法
CN116768604A (zh) * 2023-06-16 2023-09-19 芜湖映日科技股份有限公司 一种高密度izto靶材的制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100774778B1 (ko) * 1999-11-25 2007-11-07 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟, 투명한 도전성 산화물 및 스퍼터링 타겟의제조방법
JP2006195077A (ja) * 2005-01-12 2006-07-27 Idemitsu Kosan Co Ltd Ａｌ配線を備えた透明導電膜積層基板及びその製造方法。
JP4947942B2 (ja) * 2005-09-20 2012-06-06 出光興産株式会社 スパッタリングターゲット
JP4933756B2 (ja) * 2005-09-01 2012-05-16 出光興産株式会社 スパッタリングターゲット
CN102216237B (zh) * 2008-11-20 2015-05-13 出光兴产株式会社 ZnO-SnO2-In2O3类氧化物烧结体及非晶质透明导电膜

Also Published As

Publication number Publication date
CN103540895A (zh) 2014-01-29
TW201341563A (zh) 2013-10-16
CN103540895B (zh) 2017-02-22
KR20140007754A (ko) 2014-01-20
JP2014015680A (ja) 2014-01-30

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