TWI436462B - Conductive bump structure and chip bonding structure of display panel - Google Patents

Conductive bump structure and chip bonding structure of display panel Download PDF

Info

Publication number
TWI436462B
TWI436462B TW98113309A TW98113309A TWI436462B TW I436462 B TWI436462 B TW I436462B TW 98113309 A TW98113309 A TW 98113309A TW 98113309 A TW98113309 A TW 98113309A TW I436462 B TWI436462 B TW I436462B
Authority
TW
Taiwan
Prior art keywords
insulating buffer
conductive
buffer structure
wafer
conductive bump
Prior art date
Application number
TW98113309A
Other languages
Chinese (zh)
Other versions
TW201039417A (en
Inventor
Po Fu Huang
Shih Hsiung Lin
Chun Te Chang
Original Assignee
Au Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Au Optronics Corp filed Critical Au Optronics Corp
Priority to TW98113309A priority Critical patent/TWI436462B/en
Publication of TW201039417A publication Critical patent/TW201039417A/en
Application granted granted Critical
Publication of TWI436462B publication Critical patent/TWI436462B/en

Links

Description

導電凸塊結構及顯示面板之晶片接合結構Conductive bump structure and wafer bonding structure of display panel

本發明係關於一種導電凸塊結構及顯示面板之晶片接合結構,尤指一種包括具有缺口設計之絕緣緩衝結構的導電凸塊結構及顯示面板之晶片接合結構。The present invention relates to a conductive bump structure and a wafer bonding structure of a display panel, and more particularly to a conductive bump structure including an insulating buffer structure having a notch design and a wafer bonding structure of a display panel.

COG(chip on glass)技術係指將晶片直接與玻璃基板上之連接墊接合的技術,而由於COG技術具有低成本的優勢,因此目前已廣泛地應用在顯示面板的晶片接合製作上。根據現行COG技術,晶片上設置有金導電凸塊結構,且晶片與顯示面板係藉由異方性導電膠(ACF)加以接合,並使金導電凸塊結構與顯示面板之連接墊接觸以達到電性連接的效果。The COG (chip on glass) technology refers to a technique of bonding a wafer directly to a connection pad on a glass substrate, and since COG technology has a low cost advantage, it has been widely used in wafer bonding production of a display panel. According to the current COG technology, a gold conductive bump structure is disposed on the wafer, and the wafer and the display panel are joined by an anisotropic conductive paste (ACF), and the gold conductive bump structure is brought into contact with the connection pad of the display panel to achieve The effect of electrical connection.

然而,由於金與異方性導電膠的材料成本偏高,造成晶片的接合的製作成本無法進一步縮減。因此,COG技術仍有待進一步的研究發展,以節省製作成本。However, due to the high material cost of the gold and the anisotropic conductive paste, the fabrication cost of the bonding of the wafer cannot be further reduced. Therefore, COG technology still needs further research and development to save production costs.

本發明之目的之一在於提供一種導電凸塊結構及顯示面板之晶片接合結構,以解決習知COG技術所面臨之問題。One of the objects of the present invention is to provide a conductive bump structure and a wafer bonding structure of a display panel to solve the problems faced by conventional COG technology.

為達上述目的,本發明提供一種導電凸塊結構,設置於基底上,導電凸塊結構包括複數個焊墊、絕緣緩衝結構與複數個導電薄膜。焊墊係設置於基底上;絕緣緩衝結構連續地橫跨焊墊並部分覆蓋各焊墊;導電薄膜係設置於絕緣緩衝結構上並分別與各焊墊電性連接。絕緣緩衝結構具有複數個缺口,至少位於部分兩相鄰之導電薄膜之間,形成排膠通道。To achieve the above objective, the present invention provides a conductive bump structure disposed on a substrate. The conductive bump structure includes a plurality of pads, an insulating buffer structure, and a plurality of conductive films. The pad is disposed on the substrate; the insulating buffer structure continuously traverses the pad and partially covers the pads; the conductive film is disposed on the insulating buffer structure and electrically connected to the pads respectively. The insulating buffer structure has a plurality of notches at least between a portion of the two adjacent conductive films to form a discharge passage.

為達上述目的,本發明另提供一種顯示面板之晶片接合結構,包括基板、複數個連接墊、晶片與非導電性膠體。基板包括焊接區,連接墊係設置於焊接區內。晶片包括至少一導電凸塊結構,且導電凸塊結構包括複數個焊墊、絕緣緩衝結構與複數個導電薄膜。焊墊係設置於晶片上;絕緣緩衝結構連續地橫跨焊墊並部分覆蓋各焊墊;導電薄膜係設置於絕緣緩衝結構上並分別與各焊墊電性連接。非導電性膠體係設置於基板與晶片之間,並將晶片黏著於基板上。絕緣緩衝結構具有複數個缺口,至少位於部分之兩相鄰之導電薄膜之間,形成非導電性膠體之排膠通道。To achieve the above object, the present invention further provides a wafer bonding structure for a display panel, comprising a substrate, a plurality of connection pads, a wafer and a non-conductive colloid. The substrate includes a soldering region, and the connection pads are disposed in the soldering region. The wafer includes at least one conductive bump structure, and the conductive bump structure includes a plurality of pads, an insulating buffer structure and a plurality of conductive films. The pad is disposed on the wafer; the insulating buffer structure continuously traverses the pad and partially covers the pads; the conductive film is disposed on the insulating buffer structure and electrically connected to the pads respectively. The non-conductive adhesive system is disposed between the substrate and the wafer, and adheres the wafer to the substrate. The insulating buffer structure has a plurality of notches, at least between the two adjacent conductive films, forming a non-conductive colloidal discharge channel.

本發明之導電凸塊結構具有絕緣緩衝結構,有助於緩衝晶片壓合製程所產生的壓著應力。此外,絕緣緩衝結構具有缺口設計,可增加非導電性膠體之排膠通道,故可提升晶片壓合製程的良率與晶片接合結構的可靠度。The conductive bump structure of the present invention has an insulating buffer structure to help buffer the compressive stress generated by the wafer pressing process. In addition, the insulating buffer structure has a notch design, which can increase the discharge passage of the non-conductive colloid, thereby improving the yield of the wafer bonding process and the reliability of the wafer bonding structure.

為使熟習本發明所屬技術領域之一般技藝者能更進一步了解本發明,下文特列舉本發明之數個較佳實施例,並配合所附圖式,詳細說明本發明的構成內容及所欲達成之功效。The present invention will be further understood by those skilled in the art to which the present invention pertains. The effect.

請參考第1圖至第3圖。第1圖至第3圖為本發明一較佳實施例之導電凸塊結構之示意圖,其中第1圖繪示了導電凸塊結構之外觀示意圖、第2圖繪示了導電凸塊結構之上視圖,第3圖繪示了導電凸塊結構沿第2圖之剖線AA’之剖面示意圖。如第1圖至第3圖所示,本實施例之導電凸塊結構10係設置於基底12上,且導電凸塊結構12包括複數個焊墊14、絕緣緩衝結構16,以及複數個導電薄膜18。焊墊14係設置於基底12,且在本實施例中,基底12可為一晶片,而焊墊14則可與晶片之內部連線(圖未示)電性連接。絕緣緩衝結構16係設置於基底12上並橫跨焊墊14,其中本實施例之絕緣緩衝結構16具有條狀結構,但不以此為限,且絕緣緩衝結構部分覆蓋各焊墊14,並曝露出部分之各焊墊14。在本實施例中,絕緣緩衝結構16係由有彈性之絕緣材質所構成,例如高分子材質,且較佳係使用感光性材質,例如感光性聚醯亞胺(polyimide,PI),藉此可藉由曝光暨顯影製程加以製作並定義出其圖案,但並不以此為限。導電薄膜18係設置於絕緣緩衝結構16上並分別與對應之各焊墊14電性連接。在本實施例中,導電薄膜18的材質可選用各式導電性佳並與絕緣緩衝結構16具有良好接著效果之材料,例如金,但不以此為限。導電薄膜18的作用在於將焊墊14之電性連接至絕緣緩衝結構16之表面,以作進一步的對外連接。Please refer to Figures 1 to 3. 1 to 3 are schematic views showing a structure of a conductive bump according to a preferred embodiment of the present invention, wherein FIG. 1 is a schematic view showing the appearance of a conductive bump structure, and FIG. 2 is a view showing a conductive bump structure. View, FIG. 3 is a cross-sectional view of the conductive bump structure taken along line AA' of FIG. As shown in FIG. 1 to FIG. 3 , the conductive bump structure 10 of the embodiment is disposed on the substrate 12 , and the conductive bump structure 12 includes a plurality of pads 14 , an insulating buffer structure 16 , and a plurality of conductive films. 18. The pad 14 is disposed on the substrate 12, and in the embodiment, the substrate 12 can be a wafer, and the pad 14 can be electrically connected to an internal connection (not shown) of the chip. The insulating buffer structure 16 is disposed on the substrate 12 and spans the solder pad 14 , wherein the insulating buffer structure 16 of the embodiment has a strip structure, but not limited thereto, and the insulating buffer structure partially covers the pads 14 , and A portion of each of the pads 14 is exposed. In the present embodiment, the insulating buffer structure 16 is made of an elastic insulating material, such as a polymer material, and preferably a photosensitive material such as a photosensitive polyimide (PI) is used. The pattern is created and defined by the exposure and development process, but is not limited thereto. The conductive film 18 is disposed on the insulating buffer structure 16 and electrically connected to the corresponding pads 14 respectively. In this embodiment, the material of the conductive film 18 can be selected from various materials, such as gold, which are excellent in electrical conductivity and have good adhesion to the insulating buffer structure 16, but are not limited thereto. The function of the conductive film 18 is to electrically connect the pad 14 to the surface of the insulating buffer structure 16 for further external connection.

本發明之導電凸塊結構10主要包括焊墊14、絕緣緩衝結構16與導電薄膜18。絕緣緩衝結構16係作為導電凸塊結構10的主要基材之用,其具有成本低與易於圖案化的優點而可減少導電材料的使用,此外絕緣緩衝結構16亦具有緩衝晶片壓合製程時所產生的應力的效果。另外,導電薄膜18的作用為將焊墊14的電性連接至絕緣緩衝結構16的表面,以利用後續的對外連接。The conductive bump structure 10 of the present invention mainly comprises a solder pad 14, an insulating buffer structure 16 and a conductive film 18. The insulating buffer structure 16 is used as a main substrate of the conductive bump structure 10, which has the advantages of low cost and easy patterning, and can reduce the use of the conductive material. Moreover, the insulating buffer structure 16 also has a buffer wafer bonding process. The effect of the resulting stress. In addition, the conductive film 18 functions to electrically connect the pad 14 to the surface of the insulating buffer structure 16 to utilize subsequent external connections.

本發明之導電凸塊結構10的絕緣緩衝結構16具有複數個缺口20,至少位於部分之兩相鄰之導電薄膜18之間。缺口20係作為後續晶片壓合製程時非導電性膠體的排膠通道,使多餘之非導電性膠體得以順利排出。在本實施例中,各缺口20係形成於任兩相鄰之導電薄膜18之間的絕緣緩衝結構16、缺口20的深度小於絕緣緩衝結構16之高度,例如缺口20的深度係為絕緣緩衝結構16之高度的一半,且缺口20具有弧形截面,但缺口20的位置、深度、尺寸、形狀與數目等並不以此為限,而可視排膠效果作適度變更。The insulating buffer structure 16 of the conductive bump structure 10 of the present invention has a plurality of notches 20 between at least a portion of two adjacent conductive films 18. The notch 20 is used as a discharge passage for the non-conductive colloid in the subsequent wafer pressing process, so that the excess non-conductive colloid can be smoothly discharged. In this embodiment, each of the notches 20 is formed in the insulating buffer structure 16 between any two adjacent conductive films 18. The depth of the notches 20 is smaller than the height of the insulating buffer structure 16. For example, the depth of the notches 20 is an insulating buffer structure. The height of 16 is half, and the notch 20 has an arc-shaped cross section, but the position, depth, size, shape and number of the notch 20 are not limited thereto, and the visual discharge effect is moderately changed.

請再參考第4圖與第5圖。第4圖與第5圖為本發明另兩較佳實施例之導電凸塊結構之剖面示意圖,其中為簡化說明並比較各實施例之間的異同,第4圖與第5圖之實施例與前述實施例使用相同之元件符號標注相同之元件,並僅針對各實施例之相異處進行說明。如第4圖所示,絕緣緩衝結構16之缺口20並不限於圓弧截面,而可視排膠效果為幾何形截面,例如四邊形截面或其它幾何形截面。如第5圖所示,相鄰之導電薄膜18之間的缺口20的數目並不限於一個,而可視排膠效果加以變更或組合設計。Please refer to Figure 4 and Figure 5 again. 4 and 5 are schematic cross-sectional views showing the structure of the conductive bumps according to another preferred embodiment of the present invention. In order to simplify the description and compare the similarities and differences between the embodiments, the embodiments of FIGS. 4 and 5 are The foregoing embodiments are denoted by the same reference numerals, and only the differences of the embodiments are described. As shown in FIG. 4, the notch 20 of the insulating buffer structure 16 is not limited to a circular arc section, and the visible drainage effect is a geometrical section, such as a quadrangular section or other geometric section. As shown in Fig. 5, the number of the notches 20 between the adjacent conductive films 18 is not limited to one, and the visual discharge effect is changed or combined.

請參考第6圖與第7圖,並一併參考第1圖至第3圖。第6圖繪示了本發明一較佳實施例之顯示面板之晶片接合結構於接合前之示意圖,第7圖繪示了本發明一較佳實施例之顯示面板之晶片接合結構於接合後之示意圖。如第6圖所示,本實施例之顯示面板之晶片接合結構30包括基板32、複數個連接墊34、至少一晶片40,以及非導電性膠體50。基板32係為顯示面板之基板、例如薄膜電晶體基板,且其包括一焊接區36,而連接墊34係設置於焊接區36內,用以將顯示面板之導線例如資料線或閘極線(圖未示)之電性連接至焊接區36以便於對外連接。另外,焊接區36係位於顯示面板之非金屬端子區。晶片40包括至少一導電凸塊結構10,其中導電凸塊結構10包括複數個焊墊14(如第1圖與第2圖所示)、絕緣緩衝結構16,以及複數個導電薄膜18。焊墊14可與晶片40之內部連線(圖未示)電性連接。絕緣緩衝結構16橫跨焊墊14且部分覆蓋各焊墊14而曝露出部分之各焊墊14。導電薄膜18設置於絕緣緩衝結構16上並分別與對應之各焊墊14電性連接。非導電性膠體50設置於基板32與晶片40之間,並將晶片40黏著於基板32上。Please refer to Figures 6 and 7, and refer to Figures 1 to 3 together. 6 is a schematic view of a wafer bonding structure of a display panel before bonding according to a preferred embodiment of the present invention, and FIG. 7 is a diagram showing a wafer bonding structure of a display panel after bonding according to a preferred embodiment of the present invention. schematic diagram. As shown in FIG. 6, the wafer bonding structure 30 of the display panel of the present embodiment includes a substrate 32, a plurality of connection pads 34, at least one wafer 40, and a non-conductive colloid 50. The substrate 32 is a substrate of the display panel, such as a thin film transistor substrate, and includes a soldering region 36, and the connection pads 34 are disposed in the soldering region 36 for guiding the wires of the display panel such as data lines or gate lines ( The figure is not shown electrically connected to the lands 36 for external connection. Additionally, the lands 36 are located in the non-metallic terminal regions of the display panel. The wafer 40 includes at least one conductive bump structure 10, wherein the conductive bump structure 10 includes a plurality of pads 14 (as shown in FIGS. 1 and 2), an insulating buffer structure 16, and a plurality of conductive films 18. The pad 14 can be electrically connected to an internal connection (not shown) of the wafer 40. The insulating buffer structure 16 spans the pads 14 and partially covers the pads 14 to expose portions of the pads 14. The conductive film 18 is disposed on the insulating buffer structure 16 and electrically connected to the corresponding pads 14 respectively. The non-conductive colloid 50 is disposed between the substrate 32 and the wafer 40, and adheres the wafer 40 to the substrate 32.

本實施例之顯示面板之晶片接合結構30的導電凸塊結構10可為前述任一實施例所揭露之導電凸塊結構10或其變化實施樣態,其詳細說明如上文所述,在此不再重覆贅述。導電凸塊結構10之絕緣緩衝結構16具有複數個缺口20,且缺口20至少位於部分之兩相鄰之導電薄膜18之間,藉此形成非導電性膠體50之排膠通道。藉由絕緣緩衝結構16之缺口20,在晶片40與顯示面板之基板32進行晶片壓合製程時,非導電性膠體50除了可經由相鄰之絕緣緩衝結構16之間的空隙排出之外,亦可經由各絕緣緩衝結構16的缺口20排出,而不會產生非導電性膠體50無法順利排膠的問題,因此晶片40與顯示面板之基板32可順利接合,如第7圖所示。The conductive bump structure 10 of the wafer bonding structure 30 of the display panel of the present embodiment may be the conductive bump structure 10 disclosed in any of the foregoing embodiments or a variant embodiment thereof, and the detailed description thereof is as described above, and is not Repeat it again. The insulating buffer structure 16 of the conductive bump structure 10 has a plurality of notches 20, and the notches 20 are located at least between a portion of the two adjacent conductive films 18, thereby forming a discharge passage of the non-conductive colloid 50. By performing the wafer bonding process on the wafer 40 and the substrate 32 of the display panel by the notch 20 of the insulating buffer structure 16, the non-conductive colloid 50 can be discharged through the gap between the adjacent insulating buffer structures 16, The problem can be discharged through the notch 20 of each of the insulating buffer structures 16 without causing the problem that the non-conductive colloid 50 cannot be smoothly discharged. Therefore, the wafer 40 and the substrate 32 of the display panel can be smoothly joined, as shown in FIG.

綜上所述,本發明之顯示面板之晶片接合結構所使用之導電凸塊結構具有絕緣緩衝結構,有助於緩衝晶片壓合製程所產生的壓著應力。另外,絕緣緩衝結構具有缺口設計,可增加非導電性膠體之排膠通道,故可提升晶片壓合製程的良率與晶片接合結構的可靠度。另外,絕緣緩衝結構可選用感光性材料,因此缺口的形成可藉由曝光暨顯影技術輕易達成而不需增加額外成本。In summary, the conductive bump structure used in the wafer bonding structure of the display panel of the present invention has an insulating buffer structure to help buffer the compressive stress generated by the wafer bonding process. In addition, the insulating buffer structure has a notch design, which can increase the discharge passage of the non-conductive colloid, thereby improving the yield of the wafer pressing process and the reliability of the wafer bonding structure. In addition, the insulating buffer structure can be made of a photosensitive material, so that the formation of the notch can be easily achieved by exposure and development techniques without additional cost.

以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.

10...導電凸塊結構10. . . Conductive bump structure

12...基底12. . . Base

14...焊墊14. . . Solder pad

16...絕緣緩衝結構16. . . Insulation buffer structure

18...導電薄膜18. . . Conductive film

20...缺口20. . . gap

30...顯示面板之晶片接合結構30. . . Wafer bonding structure of display panel

32...基板32. . . Substrate

34...連接墊34. . . Connection pad

36...焊接區36. . . Weld zone

40...晶片40. . . Wafer

50...非導電性膠體50. . . Non-conductive colloid

第1圖至第3圖為本發明一較佳實施例之導電凸塊結構之示意圖。1 to 3 are schematic views showing a structure of a conductive bump according to a preferred embodiment of the present invention.

第4圖與第5圖為本發明另兩較佳實施例之導電凸塊結構之剖面示意圖。4 and 5 are schematic cross-sectional views showing a structure of a conductive bump according to another preferred embodiment of the present invention.

第6圖繪示了本發明一較佳實施例之顯示面板之晶片接合結構於接合前之示意圖。FIG. 6 is a schematic view showing the wafer bonding structure of the display panel before bonding according to a preferred embodiment of the present invention.

第7圖繪示了本發明一較佳實施例之顯示面板之晶片接合結構於接合後之示意圖。FIG. 7 is a schematic view showing the wafer bonding structure of the display panel after bonding according to a preferred embodiment of the present invention.

10...導電凸塊結構10. . . Conductive bump structure

12...基底12. . . Base

14...焊墊14. . . Solder pad

16...絕緣緩衝結構16. . . Insulation buffer structure

18...導電薄膜18. . . Conductive film

20...缺口20. . . gap

Claims (11)

一種導電凸塊結構,設置於一基底上,該導電凸塊結構包括:複數個焊墊,設置於該基底上;一絕緣緩衝結構,連續地橫跨該等焊墊並部分覆蓋各該焊墊;以及複數個導電薄膜,設置於該絕緣緩衝結構上並分別與各該焊墊電性連接;其中該絕緣緩衝結構具有複數個缺口,至少位於部分兩相鄰之該等導電薄膜之間,形成排膠通道。 A conductive bump structure is disposed on a substrate, the conductive bump structure includes: a plurality of solder pads disposed on the substrate; an insulating buffer structure continuously spanning the pads and partially covering the pads And a plurality of conductive films disposed on the insulating buffer structure and electrically connected to the pads respectively; wherein the insulating buffer structure has a plurality of notches, at least between the two adjacent conductive films, forming Discharge channel. 如請求項1所述之導電凸塊結構,其中該絕緣緩衝結構之材料包括感光性材料。 The conductive bump structure of claim 1, wherein the material of the insulating buffer structure comprises a photosensitive material. 如請求項1所述之導電凸塊結構,其中該基底包括一晶片。 The conductive bump structure of claim 1, wherein the substrate comprises a wafer. 如請求項1所述之導電凸塊結構,其中該絕緣緩衝結構之該缺口的深度小於該絕緣緩衝結構之高度。 The conductive bump structure of claim 1, wherein the gap of the insulating buffer structure has a depth smaller than a height of the insulating buffer structure. 如請求項1所述之導電凸塊結構,其中該絕緣緩衝結構之該缺口具有一弧形截面。 The conductive bump structure of claim 1, wherein the notch of the insulating buffer structure has an arcuate cross section. 如請求項1所述之導電凸塊結構,其中該絕緣緩衝結構之該缺口 具有一幾何形截面。 The conductive bump structure of claim 1, wherein the gap of the insulating buffer structure Has a geometric cross section. 一種顯示面板之晶片接合結構,包括:一基板,其包括一焊接區;複數個連接墊,設置於該焊接區內;一晶片,包括至少一導電凸塊結構,該導電凸塊結構包括:複數個焊墊,設置於該晶片上;一絕緣緩衝結構,連續地橫跨該等焊墊並部分覆蓋各該焊墊;複數個導電薄膜,設置於該絕緣緩衝結構上並分別與各該焊墊電性連接;以及一非導電性膠體,設置於該基板與該晶片之間,並將該晶片黏著於該基板上;其中該絕緣緩衝結構具有複數個缺口,至少位於部分之兩相鄰之該等導電薄膜之間,形成該非導電性膠體之排膠通道。 A wafer bonding structure of a display panel, comprising: a substrate comprising a soldering region; a plurality of connecting pads disposed in the soldering region; and a wafer comprising at least one conductive bump structure, the conductive bump structure comprising: a plurality a solder pad disposed on the wafer; an insulating buffer structure continuously spanning the pads and partially covering the pads; a plurality of conductive films disposed on the insulating buffer structure and respectively associated with the pads Electrically connecting; and a non-conductive colloid disposed between the substrate and the wafer, and bonding the wafer to the substrate; wherein the insulating buffer structure has a plurality of notches, at least two of the adjacent portions Between the conductive films, a discharge passage of the non-conductive colloid is formed. 如請求項7所述之顯示面板之晶片接合結構,其中該絕緣緩衝結構之材料包括感光性材料。 The wafer bonding structure of the display panel of claim 7, wherein the material of the insulating buffer structure comprises a photosensitive material. 如請求項7所述之顯示面板之晶片接合結構,其中該絕緣緩衝結構之該缺口的深度小於該絕緣緩衝結構之高度。 The wafer bonding structure of the display panel of claim 7, wherein the gap of the insulating buffer structure has a depth smaller than a height of the insulating buffer structure. 如請求項7所述之顯示面板之晶片接合結構,其中該絕緣緩衝 結構之該缺口具有一弧形截面。 The wafer bonding structure of the display panel of claim 7, wherein the insulation buffer The gap of the structure has an arcuate cross section. 如請求項7所述之顯示面板之晶片接合結構,其中該絕緣緩衝結構之該缺口具有一幾何形截面。The wafer bonding structure of the display panel of claim 7, wherein the notch of the insulating buffer structure has a geometric cross section.
TW98113309A 2009-04-22 2009-04-22 Conductive bump structure and chip bonding structure of display panel TWI436462B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW98113309A TWI436462B (en) 2009-04-22 2009-04-22 Conductive bump structure and chip bonding structure of display panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW98113309A TWI436462B (en) 2009-04-22 2009-04-22 Conductive bump structure and chip bonding structure of display panel

Publications (2)

Publication Number Publication Date
TW201039417A TW201039417A (en) 2010-11-01
TWI436462B true TWI436462B (en) 2014-05-01

Family

ID=44995487

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98113309A TWI436462B (en) 2009-04-22 2009-04-22 Conductive bump structure and chip bonding structure of display panel

Country Status (1)

Country Link
TW (1) TWI436462B (en)

Also Published As

Publication number Publication date
TW201039417A (en) 2010-11-01

Similar Documents

Publication Publication Date Title
CN101071800B (en) Tape carrier, semiconductor apparatus, and semiconductor module apparatus
JP4068628B2 (en) Wiring board, semiconductor device and display module
TWI652607B (en) Touch panel and touch display device using same
TWI381464B (en) The bump structure and its making method
TWI262347B (en) Electrical conducting structure and liquid crystal display device comprising the same
JP2004343030A (en) Wiring circuit board, manufacturing method thereof, circuit module provided with this wiring circuit board
TW200537631A (en) A semiconductor device and the fabrication thereof
CN109860253A (en) A kind of flexible display panels and flexible display apparatus
TWI434383B (en) Bonding pad structure and integrated cicruit comprise a pluirality of bonding pad structures
JP2006253289A5 (en)
WO2021103354A1 (en) Display apparatus
TW201401456A (en) Substrate structure and package structure
TWI559826B (en) Bonding structure and flexible device
TWI588948B (en) Flat pin type semiconductor device
TWI436462B (en) Conductive bump structure and chip bonding structure of display panel
KR100837281B1 (en) Semiconductor device package and method of fabricating the same
JP2009295857A (en) Connecting structure of ic chip and external wiring, and ic chip
TW200426961A (en) Semiconductor device
KR20070014015A (en) Semiconductor device
TW200525256A (en) Carrier
TWI501370B (en) Semiconductor package and method of manufacture
CN101533816B (en) A conductive projection structure and a chip welded structure of display panel
CN113257879A (en) Array substrate and display panel
TWI784661B (en) Layout structure of flexible printed circuit board
TWI446499B (en) Semiconductor flip chip device having directionally electrical connection and substrate utilized for the package

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees