TWI431698B - Packaging method - Google Patents

Description

Packaging method

The present invention relates to a packaging method, and more particularly to a method of packaging a semiconductor device.

In today's information society, electronic products are designed to be light, thin, short, and small, so that packaging technologies such as stacked semiconductor component packages that facilitate miniaturization have been developed.

In the semiconductor package processing process, the main purpose of the molding is to prevent moisture from intruding from the outside, electrically insulating from the outside, effectively discharging the heat generated inside to the outside, and providing a form that can be held by hand. The glue process is generally to place the mold on a substrate having a semiconductor wafer or an electronic component, and then melt the molten solid plastic (Epoxy Molding Compound, EMC) into a liquid state and apply it through a plunger. The pressure enters the cavity of the mold, so that the sealant plastic seals the wafer or electronic component on the substrate to form a completely airtight sealant. After the sealant is hardened, the mold release process is completed.

When a package structure is mass-produced, a plurality of semiconductor wafers or electronic components are generally disposed on a package substrate to simultaneously perform a sealing process, and then the package substrate is cut to form a plurality of package units. . However, since the sealing plastic used in the sealing process differs from the thermal expansion coefficient of the packaging substrate, in the curing process after sealing, the sealing substrate and the sealing plastic are temperature-dependent. Varying to produce different amounts of expansion or contraction causes stress and warpage of the package substrate; and the higher the temperature or the longer the time of hardening, the greater the warpage generated by the package substrate. This makes the subsequent cutting process difficult. In addition, since the semiconductor wafer or the electronic component is disposed on the package substrate, the semiconductor wafer or the electronic component is also subjected to a bending moment, and if the bending moment is too large, the semiconductor wafer or the electronic component may be damaged.

The present invention provides a packaging method which can effectively reduce warpage deformation of a substrate caused by bending stress generated by packaging.

The present invention provides a packaging method suitable for packaging a semiconductor component disposed on a substrate, the packaging method comprising providing a package mold, including a relative position configuration of the upper mold and the lower mold, the lower mold including the mold cavity, and the mold cavity has been It is provided with a plurality of insulating particles, and the upper mold and the lower mold have a separation distance. The substrate is placed on the upper mold, and the semiconductor component is disposed corresponding to the cavity of the lower mold. A first microwave baking step is performed on the package mold, the insulating particles, the substrate, and the semiconductor element to form the insulating particles into a molten encapsulated colloid. Relatively moving closer to the upper mold and the lower mold, the molten state encapsulant encapsulates the semiconductor element and covers a portion of the substrate. After the molten component encapsulates the semiconductor component and covers a portion of the substrate, a second microwave baking step is performed to cure the molten encapsulated colloid.

Based on the above, the present invention cures the encapsulated colloid in a molten state by a microwave baking step instead of a conventional heating method to form a solid encapsulant to encapsulate the substrate. Compared with the conventional heating method, the microwave baking method can not only shorten the heating time, lower the heating temperature, increase the packaging efficiency, save the power cost, but also reduce the substrate in the curing process due to the shorter curing time required. The warp deformation of the substrate caused by the generated stress prevents the semiconductor element provided on the substrate from being damaged by the bending of the substrate. Therefore, the present invention can surely increase its packaging efficiency, reduce power costs, and improve package yield.

The above described features and advantages of the present invention will be more apparent from the following description.

1 is a flow chart of a packaging method according to an embodiment of the present invention. 2 to 7 are schematic cross-sectional views showing a packaging method according to an embodiment of the present invention. Referring to FIG. 1 and FIG. 2 simultaneously, the packaging method provided by the present invention is suitable for packaging at least one semiconductor component 210 disposed on a substrate 200. The semiconductor component 210 is electrically connected to the substrate 200, and may be an electronic component such as a wafer, a transistor, or a memory component. In this embodiment, the number of the semiconductor elements 210 is plural, and the array is arranged on the substrate 200, and at least one of the semiconductor elements 210 is a wafer stack structure having a through silicon via (TSV). The encapsulation method of this embodiment includes performing a step S110 to provide a package mold 100, including one of the mold 110 and the lower mold 120, wherein the lower mold 120 includes a cavity 122, and the cavity 122 is configured. There are a plurality of insulating particles 300, and the upper mold 110 and the lower mold 120 have a separation distance D therebetween. The insulating particles 300 are disposed in the cavity 122, and the insulating particles 300 may be made of an insulating material such as epoxy resin or silicone rubber.

Referring to FIG. 3, step S120 is performed to place the substrate 200 on the upper mold 110, and the semiconductor component 210 is disposed corresponding to the cavity 122 of the lower mold 120. In the present embodiment, the manner in which the substrate 200 is placed on the upper mold 110 is vacuum adsorption. In other words, the upper mold 110 adsorbs the substrate 200 by vacuum adsorption to fix the substrate 200 to the upper mold 110. Next, in step S130, as shown in FIG. 4 and FIG. 5, a first microwave baking step M1 is performed on the package mold 100, the insulating particles 300, the substrate 200, and the semiconductor element 210 to form the molten particles 300 in a molten state. The encapsulant 310 can also dry residual moisture on the substrate 200.

Specifically, the microwave baking conditions used in the first microwave baking step M1 of the embodiment are as follows: the temperature of the microwave heating is between 30 ° C and 100 ° C, and the microwave heating time is between 1 minute and 2 Between the minutes, it is ensured that the insulating particles 300 are uniformly heated and melted. It is noted that the present invention utilizes microwave baking to perform the melting step of the insulating particles 300, which has many conventionally difficult advantages, such as cost, compared to conventional heating methods, such as thermocouples. The time is shorter, the efficiency is higher, and the power cost is saved. Moreover, the required heating temperature is lower, so that the molten structure after heating of the material is uniform and stable.

Referring to FIG. 5 and FIG. 6 simultaneously, step S140 is performed to relatively move the upper mold 110 and the lower mold 120 to cover the semiconductor element 210 and cover part of the substrate 200 in a molten state. In the embodiment, the upper mold 110 further includes a plurality of first fitting portions 112, and the lower mold 120 further includes a plurality of second fitting portions 124. When relatively moving closer to the upper mold 110 and the lower mold 120, the first The fitting portion 112 is fitted to the second fitting portion 124, and the base material 200, the upper mold 110, and the lower mold 120 constitute a closed space S. Next, in step S150, a second microwave baking step M2 is performed to cure the encapsulated colloid 310 in a molten state to form a solid encapsulant 320.

Specifically, the microwave baking conditions used in the second microwave baking step M2 of the embodiment are as follows: the temperature of the microwave heating is between 30 ° C and 100 ° C, and the microwave heating time is between 60 minutes and 120. Between minutes. It is noted that the present invention utilizes microwave bake to perform the curing step of the encapsulant 310 in a molten state, which has many advantages that are conventionally difficult to achieve, compared to conventional heating methods, such as thermocouples. For example, it takes less time, is more efficient, and saves power costs. Moreover, due to the shorter time required for curing, part of the stress between the substrate 200 and the solid encapsulant 320 is released, thereby reducing the warpage of the substrate 200. Deformation.

Finally, referring to FIG. 7, the upper mold 110 and the lower mold 120 are relatively moved to separate the solid encapsulant 320 in the cavity 122 from the lower mold 120 to complete the encapsulation. The package structure made by the encapsulation method of the embodiment has a space in which the gap between the insulating particles 300 and the bubbles in the molten state of the encapsulant 310 are removed by the first microwave baking step M1, so that the package structure formed can have A flat surface without surface voids. The invention further cures the encapsulated colloid 310 in a molten state by the second microwave baking step M2, and the required curing time is short, so that the warpage deformation of the substrate 200 due to the stress generated by the curing process can be reduced.

In summary, the present invention melts the insulating particles by a first microwave baking step to form a molten colloid, and cures the molten colloid by a second microwave baking step to form a solid encapsulant for encapsulation. Substrate. Compared with the conventional heating method, the microwave baking method can not only shorten the heating time, lower the heating temperature, increase the packaging efficiency, save the power cost, but also reduce the substrate in the curing process due to the shorter curing time required. The warp deformation of the substrate caused by the generated stress prevents the semiconductor element provided on the substrate from being damaged by the bending of the substrate. Therefore, the packaging method of the present invention can surely increase packaging efficiency, reduce power cost, and improve package yield.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

100. . . Packaging mold

110. . . Upper mold

112. . . First fitting

120. . . Lower mold

122. . . Cavity

124. . . Second fitting part

200. . . Substrate

210. . . Semiconductor component

300. . . Insulating particles

310. . . Molten state encapsulant

320. . . Solid encapsulant

D. . . Spacing distance

M1. . . First microwave baking step

M2. . . Second microwave baking step

S. . . Closed space

S110~S150. . . step

1 is a flow chart of a packaging method according to an embodiment of the present invention.

2 to 7 are schematic cross-sectional views showing a packaging method according to an embodiment of the present invention.

S110~S150. . . step

Claims (9)

A packaging method for packaging at least one semiconductor component disposed on a substrate, the packaging method comprising: providing a package mold, including a top mold and a lower mold, wherein the lower mold has a mold a hole having a plurality of insulating particles disposed therein, and a spacing distance between the upper mold and the lower mold; placing the substrate on the upper mold, and the semiconductor component corresponding to the lower mold a cavity setting; performing a first microwave baking step on the package mold, the insulating particles, the substrate, and the semiconductor component, so that the insulating particles form a molten colloid; and relatively moving the upper mold And the lower mold, the encapsulating colloid in the molten state covers the semiconductor element and covers a portion of the substrate; and after the encapsulating colloid in the molten state covers the semiconductor element and covers a portion of the substrate, performing a second A microwave baking step to cure the encapsulated colloid in the molten state. The encapsulation method of claim 1, wherein the temperature of the first microwave baking step is between 30 ° C and 100 ° C. The encapsulation method of claim 1, wherein the first microwave baking step is between 1 minute and 2 minutes. The encapsulation method of claim 1, wherein the temperature of the second microwave baking step is between 30 ° C and 100 ° C. The encapsulation method of claim 1, wherein the second microwave baking step is between 60 minutes and 120 minutes. The encapsulation method of claim 1, wherein the method of placing the substrate on the upper mold is vacuum adsorption. The encapsulation method of claim 1, wherein the insulating particles are made of epoxy or silicone. The encapsulation method of claim 1, wherein the upper mold comprises a plurality of first fitting portions, and the lower mold comprises a plurality of second fitting portions when relatively close to the upper mold and the lower mold When the first fitting portions are fitted to the second fitting portions, the base material, the upper mold and the lower mold form a closed space. The packaging method of claim 1, wherein the at least one semiconductor component comprises a plurality of semiconductor components, and the array of semiconductor components is arranged on the substrate.