TWI423544B - 具光接收器及雷射二極體的光電子電路與包含該電路之模組 - Google Patents
具光接收器及雷射二極體的光電子電路與包含該電路之模組 Download PDFInfo
- Publication number
- TWI423544B TWI423544B TW097132176A TW97132176A TWI423544B TW I423544 B TWI423544 B TW I423544B TW 097132176 A TW097132176 A TW 097132176A TW 97132176 A TW97132176 A TW 97132176A TW I423544 B TWI423544 B TW I423544B
- Authority
- TW
- Taiwan
- Prior art keywords
- laser diode
- optoelectronic circuit
- light
- cavity
- diode
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85417—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/85423—Magnesium (Mg) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
Description
本發明有關於一光電子電路,其包含至少一光接收器及一雷射二極體。該光接收器係被製作於第一半導體材料中,並包含具有一用以拾取光的像素陣列之至少一感應區。然而,該雷射二極體係製作在與第一半導體材料不同的第二半導體材料中。
本發明也有關於包含該光電子電路的光電子模組。
安裝在印刷電路板上以形成光電模組之光電子電路可以被使用於小設備中,例如無線光學電腦滑鼠或指標裝置或任何小設備中。在傳統RF無線光學滑鼠的應用中,所用之光源可以為發光二極體。此LED二極體必須放置在印刷電路板上離開光接收器一固定距離,以相對於放置光學滑鼠的工作面呈現一角度地發射光束。來自LED的光束必須足夠低角度,以能與工作面斑點動作並在光接收器的方向反射部份的光,以檢出滑鼠的動作。
因為LED必須安裝在印刷電路板的一離開光接收器的位置及其光感應區足夠遠的位置,例如約10mm的距離,所以具有此光感應區的包含光接收器之光電子模組不能被縮小化並低於一限制值。再者,具有至少一透鏡的透明單元必須被設在用於光透射的二極體上及用於光接收的光接收器上。因此,使得光電子模組相當龐大。如果此二極體及光接收器被安裝在軟式印刷電路板上,則某些部件必須更堅固,以防止二極體所發射的光束與光接收器的光接收部間之位移。
應注意的是,如果LED二極體產生相當低角度的光束,則為LED二極體所產生之大部份光被浪費掉。因此,很多電及光能也被浪費造成雜訊。再者,傳統無線光學滑鼠的光電子模組,對光學滑鼠放置面的類型有很大的靈敏度,這也是缺點。因此,為了良好的光接收,最好能在所謂Lambert面上工作。即使完成了所有的改良,能量消耗仍相當地高,這對此類型滑鼠的兩電池操作的壽命造成損害。
為了避免使用LED二極體所遇到的問題,本發明想到使用雷射二極體。以雷射二極體,有可能利用發射及反射進出工作面的雷射束之相干性。光束不再需要陡消地傾斜,以檢出光學滑鼠的動作。取決於雷射束反射回工作面前的路徑,在發射及反射雷射束間有相長干涉及相消干涉。假設工作面斑點的深度大於發射雷射光束的波長的一半,則這允許檢測光學滑鼠的動作。
因此,光電子電路的雷射二極體及光接收器可以被安裝在印刷電路板上並密封在光電模組的小型外殼內,如WO專利申請2006/042072所示。通常,在模組中設有一孔徑,以供發射光至外部及,一孔徑,用以接收反射至一面的光。用以指引發射及接收光的透鏡單元係被固定至該模組的孔徑上。透明單元阻擋孔徑,也能保護雷射二極體及光接收器不受灰塵及環境狀態的影響。
即使當光電電路的雷射二極體及光接收器被安排在傳統小型模組的單一外殼中,具有光電子電路的模組之尺寸並不能降低至足夠地小。這也造成了具有光電子電路的各種已知模組的缺點。再者,此光電子電路及所得光電子模組的生產成本不能顯著地降低。
因此,本發明之一目的為提供光電子電路,其具有至少一光接收器及一雷射二極體,其可以克服現行技術的前述缺點並降低該電路的尺寸與製造成本。
因此,本發明有關於前述光電子電路,其包含如申請專利範圍第1項所述之特徵。
光電子電路的優點在於將雷射二極體組合於光接收器上,可以完成單一之小型元件。雷射二極體被固定至光接收器的一部份並電連接至該光接收器的導電路徑或導電墊。因此,有可能降低光電子電路及包含該電路的完成模組的製造成本。也可能在一晶圓上在切割操作前設置包含光接收器及雷射二極體的每一光電子電路,或者,在晶圓被切割後設置在單元上。如此取得之光電子電路,於任意工作面的動作檢測精準度及堅固性上,提供了優越的效能。
所用之雷射二極體較佳為VCSEL型雷射二極體,較佳為單模。此類型之雷射二極體相對於其所形成之半導體層的配置及相對於接收雷射二極體的光接收器面,送出實質垂直方向的錐形窄雷射束。此類型之VCSEL二極體的半導體枓例如為砷化鎵(GaAs),而光接收器的半導體材料較佳為矽。
由於單模VCSEL雷射二極體使用於光接收器上,有可能光電子電路相對於現行電路提供改良及更堅強的效能。此雷射二極體的產生光的效率係高於傳統LED。其功率效率也是如此。
為了使用例如無線光學滑鼠,本發明之光電子電路允許經由VCSEL二極體所發射的光的相干本質,而檢測任意型表面上之動作或作用。以此類型之雷射二極體,雷射束被發射實質垂直於工作面,這也使得即使不在Lambert面上仍能工作。再者,因為雷射二極體的效率,所以,有可能具有更高之電池自主性。可以使用至少一年壽命的單一電池。這也確保例如在光學滑鼠中有空間可用,並且,成本可以降低。以此雷射二極體,電能消耗可以顯著降低,例如,當其以小結晶比供電,同時允許較傳統LED二極體為短路的光學路徑的降低照明。
因為VCSEL雷射二極體在尺寸上係遠小於光接收器,所以,二極體可以較佳安裝在由光接收器之鈍化層所作成之空中。此空腔的長與寬較佳等於雷射二極體者,而促成當二極體被安裝在光接收器時,二極體的容易定位。再者,用於雷射二極體的收納空腔可以直接接觸以電連接至雷射二極體的一端與光接收器的金屬接觸墊。在製造光接收器的方法中,這並不必要額外步驟。
為此,在雷射二極體背面上之第一導電墊可以被固定至光接收空腔中之對應金屬接觸墊。在雷射二極體上之第二導電墊或電極可以為金屬線所連接至可由外部接觸的光接收器的另一金屬接觸墊。為了VCSEL二極體材料的易碎性理由,此二極體的金屬連接線較佳為金線。組合光接收元件與雷射二極體的光電子電路的總厚度因此相當地小。
在光接收器上之收納雷射二極體的空腔可以較佳被作成在光接收器的光感應區中的像素陣列的中央。這允許單一光透鏡單元的光學分割。為了設計小型光電子模組,該單元可以安裝在光接收器的至少一光感應區上。當然,此空腔可以被安排在鄰近光感應區的光接收器的控制及處理單元區中,但不是在最終完成光電子電路的拾取區中。
VCSEL雷射二極體也可以使用在兩對應金屬凸塊上的二極體的背面上的兩金屬接觸墊或在該光接收接觸墊上的幾個凸塊加以連接。此類型之組裝係使用倒晶技術加以完成。然而,以此類型之連接,更困難保證相對於鈍化層中之收納空腔之雷射二極體地良好定位及朝向光接收器上。原則上,固定至光接收器上之雷射二極體不應傾斜。
本發明之一目的在於提供一包含光電子電路並能克服現行技術中之光電子模組,以降低完成模組的尺寸及其生產成本。
因此,本發明也有關於前述類型之包含如申請專利範圍第15項所述之特徵的光電子模組。
光電子模組的優點在於其可以只使用單一透鏡單元,用於雷射二極體及在光接收器的光感應區中之至少一像素陣列。這允許雷射束的發射向模組的外部與接收自雷射束發射而反射至工作面的光之光學分割。
光電子電路與包含該電路的光電子模組的目標、優點及特性將更清楚地出現在以下非限定例子的說明中。
在以下說明中,光電子電路與包含該電路之模組的所有部件係為熟習於本技藝者所知並以簡單方式加以說明。
在圖1a及1b中,光電子電路包含光接收器1,其上安裝並電連接有雷射二極體2。光接收器1係被作在為矽半導體基材4之第一材料中,而雷射二極體2係被作在較佳為砷化鎵(GaAs)半導體基材的第二材料中。
雷射二極體2可以為單模VCSEL(垂直空腔面發射雷射)雷射二極體。此類型之雷射二極體2係為已知方式,以並排的摻雜砷化鎵層及AlGa或AlAs或InGaAs層所作成。光係被產生在二極體中央的作動區中,及所產生之雷射束發射穿過作在頂面上之電極17的中央之孔徑16中。雷射束L以窄錐形離開穿過孔徑16並相對於形成該二極體的半導體層配置與收納該二極體的光接收器的表面實質垂直。
VCSEL雷射二極體係很小元件,其經常很難處置。其長寬大小可以約200μm×200μm或更小,其厚度可以約150μm。因此,假設其很小尺寸,吾人可以想像安裝及電連接此雷射二極體2於光接收器1的一部份上,以形成依據本發明之光電子電路為單一元件。
在圖1a中,雷射二極體2可以安裝在作在鈍化層5中之空腔13,該鈍化層5係在的製程結束時所取得。此鈍化層5的厚度可以約1μm,這並未在圖中作準確顯示以使圖更清楚。再者,可以在鈍化層5中作出幾個孔徑,以對光接收器1的金屬接觸墊3完成正常的接觸。這些接觸墊3係通常為一金屬線所連接至其上安裝有光接收器的印刷電路板或支撐的導電墊。每一接觸墊的寬可以為100μm,及各個墊間之空間可以例如約200μm。
VCSEL雷射二極體2可以在背面包含有一導電或金屬墊12,以例如覆蓋該雷射二極體的整個背面。此金屬墊12係經由在鈍化層5中所完成的金屬墊13的孔徑,直接連接至光接收器的金屬接觸墊3,以界定例如二極體的地端。此在空腔之底部的金屬接觸墊3可以由幾個略微彼此分開的金屬部份所形成,以確保二極體的固定在空腔之中。在12及光接收器1之接觸墊3間之電連接可藉由超音波完成、藉由焊接在彼此上之兩墊、或經由一導電黏劑層(未示出)加以完成。
空腔13之孔徑係被作出大小成為該雷射二極體大小的函數,即略微大於該雷射二極體長寬,以促成二極體的安裝至該空腔中及其電連接。因此,用以收納雷射二極體2的光接收器1的可接觸金屬接觸墊3必須至少略大於該二極體的大小200μm×200μm。
一旦安裝及電連接於光接收器1之鈍化層5的空腔13中,則作在雷射二極體2的頂面上之電極17可以為金屬線15所連接至設於此目的之光接收器1的另一接觸墊3。考量形成該VCSEL雷射二極體的材料的易脆性,此金屬線較佳為金線。此電極17例如界定雷射二極體的高電位端。以此方式,一供給電壓可以施加至電極17及二極體的地端12之間,以產生經由電極17穿過孔徑16射出的雷射束L。此供給電壓例如係為光接收器的信號控制及處理單元所供給,因而控制雷射二極體。
在圖1b中,雷射二極體2可以經由一倒裝晶片技術安裝在光接收器1上。為此,雷射二極體2可以在背面包含至少兩金屬或凸塊14,以界定地端及高電位端。光接收器1可以包含作在接觸墊3上之金屬凸塊6。用以連接雷射二極體2的金屬凸塊6可以較光接收器1的兩傳統接觸墊3間所需之空間為靠近。
光接收器1的接觸墊3係以傳統方式被作在半導體基材4上。沈積在半導體基材4上之鈍化層5中的孔徑首先被設置,以提供對每個接觸墊3的接觸。金屬凸塊6係隨後完成由各個接觸墊3通過鈍化層5中之孔徑,以保護該鈍化層的頂面。該雷射二極體2的金屬凸塊14然後被定位在光接收器的兩金屬凸塊6上,用以收納該二極體。雷射二極體2可以用熱壓或超音波,藉由金屬凸塊6、14而固定至光接收器1上。
當然,背面包含有兩或四金屬凸塊14以固持及電連接至光接收器的雷射二極體2也可以定位在一空腔中,該空腔係被完成於參考圖1a所示的鈍化層5中並作為此目的。在此時,必須設有至少兩分開之接觸墊3,並在空腔13的底部為可接觸。這避免了必須使用金屬線以連接二極體的一端至光接收器的另一接觸墊3。再者,在鈍化層5的空腔中的VCSEL雷射二極體2係在完成光電子電路時被保護,該空腔係被作成以收納該二極體。在此時,光電子電路的厚度被足夠地降低。
第一實施例之光電子電路係如圖2所示。在圖2中,VCSEL雷射二極體2被顯示為俯視圖,並依據參考圖1b所示之以倒裝晶片技術所作的方式進行。雷射二極體2較佳被放置在光接收器的一光感應區1a的像素陣列10的中央。二極體光通道的孔徑16係被放置於作在雷射二極體2的頂面上之電極中央。
未示於光接收器1之兩金屬路徑連接光接收器的兩金屬凸塊被連接至控制及處理單元1b的區域中。在雷射二極體2的背面上之兩金屬凸塊係被固定至作在像素陣列的中央的兩對應凸塊。這表示當光電子電路被安裝在一模組時,只有單一透鏡單元必須用作光學分割。
在此第一實施例中之光接收器1包含一光感應區1a及鄰近區1b,其包含信號控制及處理單元,用以處理為光感應區的像素所供給之電信號。顯示為正方之各個像素陣列供給一信號至該處理單元,以作為由雷射二極體所產生之由工作面反射的雷射束所拾取的光的函數。此陣列包含15×15像素至30×30像素,所包含之像素寬於10及40μm之間。然而,假定雷射二極體的位置在此陣列的中央,則此陣列像素的一部份未完成。具有兩區域1a及1b的光接收器的總面積大小可以小於3mm2
,例如約2mm2
。
在第一實施例中,所有光接收器的接觸墊3係只被安排在控制及處理單元區1b中,空下光感應區1a。光感應區1a係與控制及處理單元區的一側並排,以界定在相同例如由矽作成之半導體基材的兩可區分區域。當然,如果雷射二極體2以倒裝晶片技術連接至光接收器1,則未示出之金屬凸塊可以作在光接收器的接觸墊3上。這些金屬凸塊略微自鈍化層5的頂面凸出。
接觸墊3較佳係對稱分佈於控制及處理單元1b的區域內。這些接觸墊係被例如安排在兩並列區域上的縱長方向的兩週邊列中。彼此規則或對稱分開之予以電連接之等量接觸墊係被設在各個列中。兩或更多接觸墊3可以設在該控制及處理單元區1b相對於光感應區1a的側上。
具有金屬凸塊的接觸墊3的對稱分佈為必要的,以確保以倒裝晶片技術進行之完成之光電子電路可以可靠地組裝在印刷電路板或支撐件上。因此,在組裝時,沒有力量被施加至光感應區側上,而保護了光感應區域不受到機械應力。
光電子電路的第二實施例係如圖3所示。在圖3中,VCSEL雷射二極體2係被顯示於俯視圖中,並以參考圖1a所示之方式,連接至光接收器1。VCSEL雷射二極體2係被收納及電連接至作於鈍化層5中之空腔13中。金屬線15連接至為二極體的電極17所形成之高電位端至光接收器1的另一鄰接之接觸墊3。
較佳地,雷射二極體係定位於控制及處理單元區1b中,並接近光感應區1a,使得只有一部份之光學透鏡單元被用以組裝於一模組中。再者,二極體的位置必須足夠地由光電子電路的拾取區移除。
圖4顯示光接收器1的光感應區1a及依據參考圖1a之第一方式的雷射二極體的連接。
此光感應區1a包含兩像素陣列10’及10”,其一個係被另一個的中央。安排在中央的第一像素陣列10”係由較細構成,而包圍第一像素陣列的第二像素陣列10’係由較大像素構成。因為此結構,如同人類肉眼,第一陣列10’的像素係被使用作為面斑點的相干性檢測,因為它們為精確,所以不能檢測大的幅度動作。第二陣列10’的像素係被使用作為檢測極端動作,因為它們較快並相容於大的幅度動作,但較不準確。
圖5顯示包含依據本發明光電子電路的第一光電子模組。此光電子模組可以例如裝配至一小設備,例如無線光學電腦滑鼠。作成此第一模之光電子電路係部份根據圖2的第一實施例。雷射二極體2係經由兩金屬凸塊14固定至光接收器1的兩對應金屬凸塊6於光感應區1a的像素陣列10的中央。
光電子電路的光接收器1的基材4係安裝在可以為硬式或軟式的印刷電路板或支撐30上。控制及處理單元區1b包含一組接觸墊3,其可以例如以一金屬鋁線15’連接至該印刷電路板的對應導電墊上。未示出之不透明外殼或密封樹脂可以放在此區1b上,以保護它使之不受光。
當然,也可以想出在區域1b的接觸墊上作出未示出之金屬凸塊6。這將使得光電子電路直接連接至印刷電路的對應導電路徑,該等路徑係類似於金屬凸塊加以排列。於此時,一貫孔(未示出)必須設在印刷電路板或支撐30中在光電子電路的光感應區1a之上。
光電子模組也包含一單一透鏡單元20,其係被安裝在光電子電路的光感應區1a上。此光學分離透鏡包含例如一第一非球面透鏡22於中央位置,用以導引離開雷射二極體2的孔徑16的雷射束L至工作面S的方向中。例如,一對中於第一透鏡的第二非球面透鏡21覆蓋該光感應區1a的像素陣列10,以再導引為工作面S所反射的光R朝向像素陣列。
因為雷射二極體係被安排在陣列10的中央,所以,發射至工作面S的雷射束L及由工作面S反射的光R行進了很短路徑。因此及所產生之雷射束的相干性,雷射二極體可以以很小循環比供電,同時,產生降低之照明區。這降低了模組之電能消耗,而增加了滑鼠的電池壽命。
光電子電路的第三實施例係如圖金屬凸塊6所示。此光電子電路包含由上方看大致正方形的光接收器1,及示於光接收器1的中央的雷射二極體2。VCSEL2係被定位並電連接至在中央空腔13中之接觸墊,該空腔係如參考圖1a所述之光接收器的鈍化層所作成。
中央空腔13係以光接收器1的製造方法中之相同於孔徑的步驟加以完成,該孔徑係給予接觸金屬接觸墊3。這些安排在光接收器的週邊的接觸墊3可以為金屬鋁線15’所連接至未顯示之在印刷電路板上的對應墊。在雷射二極體2的頂面上之電極17係藉由金線15所連接至光接收器的一接觸墊3。以此方式,雷射二極體可以經由光接收器所供電,以產生離開通過電極17中之中央孔徑16的雷射束。
在此第三實施例中,光接收器1包含幾個由4個相同大小的像素陣列10a、10b、10c、10d所形成的光感應區。安排在光接收器1的各個角落的各個陣列可以包含例如16×16像素。這些像素陣列及接觸墊3的排列可以全部對稱於光接收器1的各側的兩陣列間的兩接觸墊。光接收器1的寬長大小可以例如約1.8mm×1.8mm。
此光接收器1可以在各陣列間包含至少一區,其具有一單元,用於為像素所供給之信號的控制與處理。然而,也可以想出該光接收器1只包含光感應區及用以收納雷射二極體2的一部份。
當然,也可以想出該4像素陣列,各個具有不同尺寸或者兩個與另兩個類似陣列不同。陣列的像素尺寸也可以類似或彼此不同。
示於圖6中之第三實施例的光電子電路可以安裝在光電子模組中,如圖7中的部份垂直剖面圖的簡化方式所示。
光接收器1的基材4的背面係被固定至印刷電路板或支撐30。可以經由鈍化層5接觸並安排在光接收器的週邊的部份的光接收器接觸墊可以個別地為金屬鋁線15’所連接至印刷電路板30的對應導電墊。光接收器1更包含以簡化方式所示的4個像素陣列10a、10b、10c、10d。
在VCSEL雷射二極體2的背面上之地端12係連接至設於此目的之光接收器之接觸墊3。在該二極體的頂面上之電極17係為金的金屬線15所連接至光接收器的控制接觸墊的一個。
光電子模組更包含一單一透鏡單元40,其係被安排在光接收器上,以完整地覆蓋光接收器。此透鏡單元40可以停放或固定至30上,同時,留下供連接光接收器1至印刷電路板的金屬線15’通過的孔徑。如果在光接收器1中設有至少一控制及處理單元區,則此區必須為不透明蓋(未示出)所覆蓋或塗覆上傳統密封樹脂。
此透鏡單元40包含一中央透鏡42,設以導引為雷射二極體2所產生之雷射束於工作面S的方向中。透鏡單元更包含4個週邊透鏡41,各個分別安排在一像素陣列10a、10b、10c、10d上,以將自工作面反射的光R再導引至各像素陣列。
由於光電子電路的元件及包含該電路的模組的配置,最佳光學距離係被最佳化。可以為雷射二極體所產生一窄低強度雷射點或束,同時保證收集以幾個視場的所有像素陣列所發出之光的最大場。以單一光學單元,光電子模組可以安裝有最佳組裝公差。由雷射二極體至工作面S的最小距離可以降低至約1.8mm的距離。
由以上之說明,可以想出光電子電路及包含該電路的模組的變化例可以為熟習於本技藝者在不脫離本發明以下之申請專利範圍所界定之本發明範圍下加以完成。可以想到安裝幾個VCSEL雷射二極體在光接收器上,二極體可以為單模或多模。不同類型之雷射二極體也可以安排以直接組裝在該光接收器的一部份上。光接收器也可以包含類似或不同大小幾個像素陣列,用以檢測幾個類型之動作。也可以提供微製造之光纖配置作為光電子模組,以降低光接收器的大小。
1...光接收器
2...雷射二極體
3...接觸墊
4...半導體基材
5...鈍化層
6...金屬凸塊
10,10’,10”,10a-d...像素陣列
12...金屬墊
13...空腔
14...金屬凸塊
15,15’...金屬線
16...孔徑
17...電極
1a...光感應區
1b...控制及處理單元區
20...單一透鏡單元
21...非球面透鏡
22...非球面透鏡
30...印刷電路板/支撐
40...透鏡單元
41...週邊透鏡
42...中央透鏡
S...工作面
圖1a及1b顯示依據本發明之連接雷射二極體至光電子電路的光接收器之兩種方式的部份剖面圖,其中為在光接收器的空腔中,及另一個為經由倒晶技術;
圖2為依據本發明之第一實施例之光電子電路的俯視圖;
圖3為依據本發明之第二實施例的光電子電路的俯視圖;
圖4顯示於圖3中所示之第二實施例之部份俯視圖,其具有光接收器的一光感應區係由兩個像素陣列所形成,一陣列係安排在另一個的中央;
圖5顯示包含依據本發明之光電子電路的第一光電子模組的部份在圖2的第一實施例中的垂直剖面圖;
圖6為依據本發明之光電子電路的第三實施例之俯視圖;及
圖7顯示在依據圖6的第三實施例中之包含本發明的光電子電路的第二光電子模組的部份垂直剖面圖。
1...光接收器
2...雷射二極體
3...接觸墊
4...半導體基材
5...鈍化層
12...金屬墊
13...空腔
15...金屬線
16...孔徑
17...電極
Claims (16)
- 一種光電子電路,包含:一光接收器,製作於第一半導體材料中,該光接收器包含至少一光感應區具有一像素陣列,用以拾取光,一雷射二極體,製作於與該第一半導體材料不同的第二半導體材料中,其中該雷射二極體係安裝於穿過該光接收器一部份上的鈍化層所作成之空腔中及該雷射二極體也在該空腔中直接電連接至該光接收器的該一部份,及其中當該雷射二極體安裝在該空腔中時,該空腔將該雷射二極體導引並定位於該空腔中,用於該直接電連接。
- 如申請專利範圍第1項所述之光電子電路,其中該雷射二極體為單模VCSEL雷射二極體,在與其上安裝有該二極體的該光接收器的表面基本上垂直之方向提供雷射束,及其中該VCSEL雷射二極體的該第二半導體材料係由砷化鎵所形成。
- 如申請專利範圍第1項所述之光電子電路,其中該光接收器的至少一可接觸第一金屬接觸墊係安排在該空腔的底部,用以電連接至在該雷射二極體的背面上的至少一導電端,該光接收器也包含幾個其他接觸墊,其係可以透過在該鈍化層的孔徑由外部接觸。
- 如申請專利範圍第3項所述之光電子電路,其中該在該空腔中之第一金屬接觸墊係由幾個金屬部份所形成,以促成該二極體的該導電端之固定至該空腔中。
- 如申請專利範圍第3項所述之光電子電路,其中該VCSEL雷射二極體包含一電極在一頂面上,在該頂面的中央設有一孔徑,用以供為該雷射二極體所產生的雷射束通過,及其中該電極係為一金屬線所連接至該光接收器的第二接觸墊,一供給電壓係可以經由該光接收器而被提供在該電極與在該二極體的該背面之該導電端之間,以產生該雷射束。
- 如申請專利範圍第3項所述之光電子電路,其中該VCSEL雷射二極體包含至少兩導電端,安排在該二極體的該背面上,以連接至可經由收納該雷射二極體的該空腔接觸的兩個別接觸墊。
- 如申請專利範圍第1項所述之光電子電路,其中該第一半導體材料為矽之基材的光接收器包含:至少一光感應區,其包含至少一像素陣列;及一具有控制及處理單元的鄰近區,用於該像素陣列所供給之信號。
- 如申請專利範圍第1項所述之光電子電路,其中該雷射二極體係被定位並電連接至該像素陣列的中央。
- 如申請專利範圍第7項所述之光電子電路,其中該雷射二極體係被安裝並電連接至該信號控制及處理單元區中。
- 如申請專利範圍第1項所述之光電子電路,其中該光接收器的該光感應區包含一第一像素陣列,安排在第二像素陣列的中央,及其中該第一像素陣列係由較該第二像素陣列為細的像素所形成。
- 如申請專利範圍第1項所述之光電子電路,其中該光接收器包含幾個像素陣列,尤其4個像素陣列,及其中該雷射二極體係被安裝及電連接至該光接收器的中央。
- 如申請專利範圍第11項所述之光電子電路,其中該4個像素陣列係為相同大小並被安排在該光接收器的各個角落中,及其中該可經由穿過該光接收器的一鈍化層之孔徑接觸的光接收器的接觸墊係被規則地安排在該光接收器的週邊及在各個像素陣列之間。
- 如申請專利範圍第7項所述之光電子電路,其中該所有可經由穿過該光接收器的鈍化層之孔徑接觸的該光接收器的接觸墊係只被安排在該控制及處理單元區的一側上,該控制及處理單元區係並排於該光感應區。
- 如申請專利範圍第13項所述之光電子電路,其中該雷射二極體係安裝並電連接至一空腔,該空腔係穿過鄰近該光感應區的該光接收器的該控制及處理單元區中鈍化層所作成,該空腔的大小係實質等於該二極體的大小,以導引並定位該二極體至在該空腔底部的該光接收器第一金屬接觸墊,及其中該二極體的該頂面上的電極係為一金屬線所連接至該光接收器的第二鄰近接觸墊。
- 一種光電子模組,包含如申請專利範圍第1項所述之光電子電路,該光電子電路係被安裝在印刷電路板或支撐上,其中該光電子模組包含一單一透鏡單元,至少安排在該光接收器的該光感應區上,該單一透鏡單元允許在該雷射二極體與該至少一像素陣列間之光學分離。
- 如申請專利範圍第15項所述之光電子模組,其中該雷射二極體係安裝在該光感應區的至少一像素陣列的中央,及其中該透鏡單元的第一透鏡係在該雷射二極體上的中央位置,以將離開該雷射二極體頂的中央孔徑的雷射束,導引至工作面的方向,及其中一第二透鏡被對中於該第一透鏡,以覆蓋該光感應區的該像素陣列,以將為該工作面所反射的光再導引至該像素陣列。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07115378A EP2031714B1 (fr) | 2007-08-31 | 2007-08-31 | Circuit optoélectronique ayant un photorécepteur et une diode laser, et module le comprenant |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200931746A TW200931746A (en) | 2009-07-16 |
TWI423544B true TWI423544B (zh) | 2014-01-11 |
Family
ID=38777693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW097132176A TWI423544B (zh) | 2007-08-31 | 2008-08-22 | 具光接收器及雷射二極體的光電子電路與包含該電路之模組 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7957448B2 (zh) |
EP (1) | EP2031714B1 (zh) |
CN (1) | CN101378175B (zh) |
AT (1) | ATE478455T1 (zh) |
DE (1) | DE602007008561D1 (zh) |
TW (1) | TWI423544B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8265487B2 (en) * | 2009-07-29 | 2012-09-11 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Half-duplex, single-fiber (S-F) optical transceiver module and method |
US9570648B2 (en) * | 2012-06-15 | 2017-02-14 | Intersil Americas LLC | Wafer level optical proximity sensors and systems including wafer level optical proximity sensors |
CN102819866B (zh) * | 2012-08-22 | 2015-09-09 | 西安工业大学 | 一种非朗伯表面快速三维重构方法 |
US10203399B2 (en) | 2013-11-12 | 2019-02-12 | Big Sky Financial Corporation | Methods and apparatus for array based LiDAR systems with reduced interference |
US9360554B2 (en) | 2014-04-11 | 2016-06-07 | Facet Technology Corp. | Methods and apparatus for object detection and identification in a multiple detector lidar array |
US10036801B2 (en) | 2015-03-05 | 2018-07-31 | Big Sky Financial Corporation | Methods and apparatus for increased precision and improved range in a multiple detector LiDAR array |
US9721837B2 (en) | 2015-04-16 | 2017-08-01 | Intersil Americas LLC | Wafer level optoelectronic device packages with crosstalk barriers and methods for making the same |
TWI585911B (zh) * | 2015-08-12 | 2017-06-01 | 精材科技股份有限公司 | 一種感應器封裝體及其製造方法 |
DE102015115635B3 (de) * | 2015-09-16 | 2017-03-16 | Fraba B.V. | Optoelektronische Sicherheitseinrichtung |
US9866816B2 (en) | 2016-03-03 | 2018-01-09 | 4D Intellectual Properties, Llc | Methods and apparatus for an active pulsed 4D camera for image acquisition and analysis |
CN111446345A (zh) | 2019-01-16 | 2020-07-24 | 隆达电子股份有限公司 | 发光元件的封装结构 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2300301A (en) * | 1995-04-28 | 1996-10-30 | Samsung Electronics Co Ltd | VCSEL with photodetector |
EP1324396A1 (en) * | 2000-09-29 | 2003-07-02 | Sanyo Electric Co., Ltd. | Receiving optics and photosemiconductor device having the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5814803A (en) * | 1994-12-23 | 1998-09-29 | Spectra-Physics Scanning Systems, Inc. | Image reader with multi-focus lens |
US5978401A (en) * | 1995-10-25 | 1999-11-02 | Honeywell Inc. | Monolithic vertical cavity surface emitting laser and resonant cavity photodetector transceiver |
US6239456B1 (en) * | 1998-08-19 | 2001-05-29 | Photobit Corporation | Lock in pinned photodiode photodetector |
WO2000057522A1 (en) * | 1999-03-19 | 2000-09-28 | Cielo Communications, Inc. | Vcsel power monitoring system using plastic encapsulation techniques |
US6898219B2 (en) * | 2000-09-29 | 2005-05-24 | Optical Communication Products, Inc. | Apparatus and method for VCSEL monitoring using scattering and reflecting of emitted light |
JP2003197881A (ja) * | 2001-12-27 | 2003-07-11 | Seiko Epson Corp | 半導体集積回路、半導体集積回路の製造方法、半導体素子部材、電気光学装置、電子機器 |
FR2849215B1 (fr) * | 2002-12-20 | 2005-03-11 | Mauna Kea Technologies | Systeme de microscopie laser confocale parallele basee sur la technologie vcsel |
US7652244B2 (en) | 2004-10-05 | 2010-01-26 | Finisar Corporation | Combined laser transmitter and photodetector receiver package |
-
2007
- 2007-08-31 EP EP07115378A patent/EP2031714B1/fr active Active
- 2007-08-31 AT AT07115378T patent/ATE478455T1/de not_active IP Right Cessation
- 2007-08-31 DE DE602007008561T patent/DE602007008561D1/de active Active
-
2008
- 2008-08-18 US US12/193,248 patent/US7957448B2/en active Active
- 2008-08-22 TW TW097132176A patent/TWI423544B/zh active
- 2008-09-01 CN CN2008102146623A patent/CN101378175B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2300301A (en) * | 1995-04-28 | 1996-10-30 | Samsung Electronics Co Ltd | VCSEL with photodetector |
EP1324396A1 (en) * | 2000-09-29 | 2003-07-02 | Sanyo Electric Co., Ltd. | Receiving optics and photosemiconductor device having the same |
Also Published As
Publication number | Publication date |
---|---|
US7957448B2 (en) | 2011-06-07 |
CN101378175A (zh) | 2009-03-04 |
US20090059989A1 (en) | 2009-03-05 |
CN101378175B (zh) | 2013-10-16 |
ATE478455T1 (de) | 2010-09-15 |
TW200931746A (en) | 2009-07-16 |
EP2031714A1 (fr) | 2009-03-04 |
DE602007008561D1 (de) | 2010-09-30 |
EP2031714B1 (fr) | 2010-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI423544B (zh) | 具光接收器及雷射二極體的光電子電路與包含該電路之模組 | |
JP3987500B2 (ja) | 光配線基板および光配線基板の製造方法 | |
CN106024772B (zh) | 接近度和测距传感器 | |
US11973320B2 (en) | VCSEL device for an SMI sensor for recording three-dimensional pictures | |
JP5505424B2 (ja) | 光通信モジュール | |
US7429725B2 (en) | Optical assembly with optical transmitting and receiving functions | |
US20170160427A1 (en) | Miniaturized optical proximity sensor | |
KR20110081783A (ko) | 광 모듈 및 그 제조 방법 | |
US20140321816A1 (en) | Optical connector | |
WO2011055568A1 (ja) | 光通信モジュール | |
US6990262B2 (en) | Optical module | |
JP2009027088A (ja) | 半導体発光装置 | |
JPWO2020166185A1 (ja) | 触覚及び近接センサ | |
US7245648B2 (en) | Optoelectronic arrangement | |
JP4969055B2 (ja) | 光通信モジュール | |
WO2010113912A1 (ja) | 光通信モジュール | |
KR20090124771A (ko) | 광전변환모듈 | |
TWI705632B (zh) | 雷射二極體裝置 | |
US10707644B1 (en) | Laser diode device | |
CN115000800B (zh) | 一种激光芯片倒装系统以及方法 | |
WO2022217948A1 (zh) | 接收装置和激光雷达 | |
JPH04252082A (ja) | 光結合装置 | |
CN210720818U (zh) | 主动式对位装置 | |
CN115685146A (zh) | 直接飞行时间感测模组 | |
CN111435780A (zh) | 发光元件 |