TWI420135B - Method for manufacturing anti-reflection layer - Google Patents

Description

Method for manufacturing anti-reflection layer

The present invention relates to a method for producing an antireflection layer, and more particularly to a method for producing an antireflection layer having a preferred antireflection effect.

Solar energy is an energy source that never runs out and is non-polluting. Therefore, it has always been the focus of attention when solving the problems of pollution and shortage faced by petrochemical energy.

Since solar cells can directly convert solar energy into electrical energy, it has become a very important research topic at present. Generally, in solar cells, there is usually an antireflection layer made of ruthenium. The anti-reflection layer is mainly used to reduce the reflectance of incident light to increase the incident amount of light entering the solar cell, thereby improving the component performance.

At present, in the manufacture of the anti-reflection layer, an etching process is usually used to etch the germanium substrate, and the passivation surface is formed by increasing the surface roughness and unevenness of the germanium substrate to reduce the reflectance. However, this method does not accurately control the periodicity and the array property of the passivation surface, so that the antireflection effect cannot be effectively improved, and the incident light cannot be further utilized.

The present invention provides a method of producing an antireflection layer which can provide an antireflection layer with a better antireflection effect.

The present invention provides a method of manufacturing an antireflection layer which first provides a substrate. Then, a spherical particle array is formed on the substrate. Then, using the spherical particle array as a mask, a first etching process is performed to form a plurality of grooves in the substrate. A layer of material is then formed in the array of spherical particles and in the grooves. Following this, the array of spherical particles and the layer of material on the array of spherical particles are removed. After removing the array of spherical particles and the layer of material on the array of spherical particles, a second etching process is performed.

According to the method of manufacturing an antireflection layer according to an embodiment of the invention, the substrate is, for example, a germanium substrate.

According to the method of manufacturing an antireflection layer according to an embodiment of the present invention, each of the spherical particles in the spherical particle array is, for example, a nanospherical particle.

According to the method of manufacturing an antireflection layer according to an embodiment of the present invention, the material of each of the spherical particles in the spherical particle array is, for example, a polymer material or glass.

According to the method for producing an antireflection layer according to an embodiment of the invention, the method for forming the spherical particle array described above is, for example, first adding a plurality of spherical microparticles to a solvent. Then, a solvent having spherical particles is coated on the substrate. Next, a spherical particle array is formed by self-assembly of spherical particles. After that, the solvent is removed.

According to the method for producing an antireflection layer according to an embodiment of the present invention, the solvent is, for example, water or a mixed solution of water and methanol.

According to the manufacturing method of the anti-reflection layer according to the embodiment of the present invention, the structure of the spherical particle array is, for example, a monolayer hexagonal close-packaged structure or a double-layer triangular dense stacked structure (bilayer). Triangular close-packaged structure).

According to the method for fabricating an anti-reflective layer according to an embodiment of the invention, the first etching process is, for example, a dry etching process.

According to the method for fabricating an antireflection layer according to an embodiment of the invention, the dry etching process is, for example, a reactive ion etching (RIE) process.

According to the method of manufacturing an anti-reflection layer according to an embodiment of the invention, the material of the material layer is different from the material of the substrate, for example.

According to the method of manufacturing an antireflection layer according to an embodiment of the invention, the material of the material layer is, for example, a metal.

According to the method for producing an antireflection layer according to an embodiment of the present invention, the method for forming the material layer is, for example, an evaporation method.

According to the method of manufacturing an antireflection layer according to an embodiment of the present invention, the method of removing the spherical particle array and the material layer on the spherical particle array is, for example, using an organic solvent to shake the substrate.

According to the manufacturing method of the anti-reflection layer according to the embodiment of the invention, the second etching process is, for example, a wet etching process.

According to the method for manufacturing an antireflection layer according to the embodiment of the invention, the etching solution of the wet etching process is, for example, a mixed solution of nitric acid, hydrofluoric acid and deionized water.

Based on the above, the present invention utilizes a spherical particle array as a mask and forms a highly periodic and arrayed cone on the substrate by evaporation, so that when light is irradiated onto the substrate, the reflectance of the light can be effectively reduce. In addition, after forming a tap having a high periodicity and an array property, the present invention performs an etching process on a substrate other than the taper, so that the formed passivation surface can also have a high degree of periodicity and array property, and thus The incident light is further utilized.

The above described features and advantages of the present invention will be more apparent from the following description.

1A-1E are cross-sectional views showing a manufacturing process of an anti-reflection layer according to an embodiment of the invention. First, referring to FIG. 1A, a substrate 100 is provided. The substrate is, for example, a tantalum substrate. Then, a spherical particle array 102 is formed on the substrate 100. The spherical particle array 102 is composed of, for example, a plurality of spherical particles 104. The material of the spherical particles 104 may be a polymer material or glass. The polymer material is, for example, polystyrene. The method of forming the spherical particle array 102 is, for example, first adding the spherical fine particles 104 to a solvent. The solvent is, for example, water. Alternatively, in order to enable the solvent to be volatilized rapidly in a subsequent process, the solvent may also be a mixed solution of water and methanol. After the spherical fine particles 104 are added to the solvent, the solvent is uniformly coated on the substrate 100. At this time, the spherical fine particles 104 in the solvent are freely moved, diffused, and sorted on the substrate 100 in a self-assembly manner having the lowest energy state to form the spherical particle array 102. In general, the spherical particle array 102 composed of the self-assembly of the spherical particles 104 may have a well-known single-layer hexagonal dense stacked structure or a double-layered triangular dense stacked structure, which is highly periodic and array-like. structure. Thereafter, the solvent is removed by heating, rotating or self-evaporating.

Further, in order to further improve the self-assembly effect of the spherical fine particles 104, the spherical fine particles 104 are preferably nano spherical particles having a minute size.

Then, referring to FIG. 1B, the first etching process is performed with the spherical particle array 102 as a mask to form the recess 106 in the substrate 100. The first etching process is, for example, a dry etching process, which is preferably a reactive ion etching process. In particular, when the spherical particles 104 are nanospherical particles, the grooves 106 formed by etching may also be referred to as nanowells. Further, depending on actual needs, the gap between the spherical particles 104 can also be adjusted by adjusting the size of the spherical particles 104 to form the grooves 106 having various sizes and arrangement periods.

Next, referring to FIG. 1C, a material layer 108 is formed on the spherical particle array 102 and the groove 106. The material of the material layer 108 is, for example, different from the material of the substrate 100 to avoid damage to the material layer 108 during subsequent etching processes on the substrate 100. The material of the material layer 108 is, for example, a metal, which may be gold, silver, copper, aluminum, nickel, chromium, tin, platinum, iron, ruthenium, zinc, lead, molybdenum, niobium, gallium or alloys thereof. The method of forming the material layer 108 includes vapor deposition, thermal evaporation, sputtering, or E-beam evaporation, wherein the effect of vapor deposition is optimal. In detail, when the material layer 108 is formed by the above-described manner, the material layer 108 is formed on the surface of the spherical particles 104, and is formed in the groove 106 through a regularly arranged gap between the spherical particles 104. Thus, the layer of material 108 located in the recess 106 can be secured to the substrate 100 and is less prone to flaking.

Then, referring to FIG. 1D, the spherical particle array 102 and the material layer 108 on the spherical particle array 102 are removed, and the remaining material layer 108 in the groove 106 forms the cone 110. The method of removing the spherical particle array 102 and the material layer 108 on the spherical particle array 102 is, for example, shaking the substrate 102 using an organic solvent to lift the spherical particles 104 from the surface of the substrate 100. In one embodiment, the substrate 102 can be shaken using acetone and methanol in sequence. In particular, if the spherical particle array 102 is a single-layer hexagonal dense stacked structure, the formed tapered body 110 will form a lattice having a triangular periodic structure; if the spherical particle array 102 is a double-layered triangular array With a densely packed structure, the formed cone 110 will form a lattice having a hexagonal periodic structure.

Thereafter, referring to FIG. 1E, a second etching process is performed on the substrate 100 to make the surface of the substrate 100 a passivation surface to improve surface roughness and unevenness to form the anti-reflection layer 10 of the present invention. The second etching process is, for example, a wet etching process, and the etching liquid used is, for example, a mixed solution of nitric acid, hydrofluoric acid, and deionized water. By adjusting the concentration of nitric acid in the etching solution and the etching time, the reflectance when the incident light is irradiated onto the substrate 100 can be further adjusted. The higher the concentration of nitric acid or the longer the etching time, the lower the reflectance can be obtained. In particular, since the arrangement of the cones 110 has a high degree of periodicity and array property, the passivation surface formed by the substrate 100 other than the tapered body 110 after etching is also highly periodic and array-oriented. .

It is worth mentioning that the above method of forming the anti-reflection layer 10 can be used to form an anti-reflection layer in a solar cell, but the invention is not limited thereto. The above method can also be applied to the manufacture of an anti-reflection layer in other components.

In summary, the present invention utilizes a spherical particle array as a mask and forms a highly periodic and arrayed cone on the substrate by evaporation, whereby the cone can effectively make incident light The reflectance is lowered, which in turn improves the antireflection effect of the antireflection layer.

In addition, after forming a cone having a high degree of periodicity and arrayability, the present invention performs an etching process on a substrate other than the tapered body, so that the formed passivation surface also has a high periodicity and an array property, so that the incident can be incident. Light is used further.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

10‧‧‧Anti-reflective layer

100‧‧‧Substrate

102‧‧‧Spherical particle array

104‧‧‧Spherical particles

106‧‧‧ Groove

108‧‧‧Material layer

110‧‧‧ cone

1A-1E are cross-sectional views showing a manufacturing process of an anti-reflection layer according to an embodiment of the invention.

10. . . Antireflection layer

100. . . Substrate

106. . . Groove

110. . . Cone

Claims (17)

A method for manufacturing an anti-reflection layer, comprising: providing a substrate; forming a spherical particle array on the substrate; using the spherical particle array as a mask, performing a first etching process to form a plurality of substrates a groove; forming a material layer on the array of spherical particles and the grooves, wherein the material layer fills at least the grooves; removing the array of spherical particles and the image on the array of spherical particles a layer of material to form a plurality of cones on the substrate; and after removing the array of spherical particles and the layer of material on the array of spherical particles, performing a second etching process to cause the cones The surface of the substrate between the objects becomes a passivated surface. The method for producing an antireflection layer according to claim 1, wherein the substrate comprises a tantalum substrate. The method for producing an antireflection layer according to claim 1, wherein each of the spherical particles in the array of spherical particles is a nanospherical particle. The method for producing an antireflection layer according to claim 1, wherein the material of each of the spherical particles in the array of spherical particles comprises a polymer material or glass. The method for producing an antireflection layer according to claim 4, wherein the polymer material is polystyrene. The manufacturer of the anti-reflection layer as described in claim 1 The method for forming the spherical particle array comprises: adding a plurality of spherical particles to a solvent; applying the solvent having the spherical particles to the substrate; and the self of the spherical particles Assembly to form the array of spherical particles; and removing the solvent. The method for producing an antireflection layer according to claim 6, wherein the solvent comprises water or a mixed solution of water and methanol. The method for producing an antireflection layer according to claim 1, wherein the structure of the spherical particle array comprises a single layer hexagonal dense stacked structure or a double layer triangular dense stacked structure. The method for manufacturing an anti-reflection layer according to claim 1, wherein the first etching process is a dry etching process. The method of manufacturing an antireflection layer according to claim 9, wherein the dry etching process comprises a reactive ion etching process. The method for producing an antireflection layer according to claim 1, wherein the material of the material layer is different from the material of the substrate. The method for producing an antireflection layer according to claim 11, wherein the material of the material layer comprises a metal. The method for producing an antireflection layer according to claim 12, wherein the metal comprises gold, silver, copper, aluminum, nickel, chromium, tin, platinum, iron, bismuth, zinc, lead, molybdenum, niobium, gallium. Or its alloy. The method for producing an antireflection layer according to claim 1, wherein the method for forming the material layer comprises evaporation, thermal evaporation, sputtering or Electron beam evaporation. The method of manufacturing an antireflection layer according to claim 1, wherein the method of removing the array of spherical particles and the layer of material on the array of spherical particles comprises using an organic solvent to shake the substrate. The method for manufacturing an anti-reflection layer according to claim 1, wherein the second etching process is a wet etching process. The method for producing an antireflection layer according to claim 16, wherein the etching solution of the wet etching process comprises a mixed solution of nitric acid, hydrofluoric acid and deionized water.