KR101667180B1 - Solar cell based on chalcogenide using new conceptional structure and manufacturing method thereof - Google Patents
Solar cell based on chalcogenide using new conceptional structure and manufacturing method thereof Download PDFInfo
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- KR101667180B1 KR101667180B1 KR1020160004199A KR20160004199A KR101667180B1 KR 101667180 B1 KR101667180 B1 KR 101667180B1 KR 1020160004199 A KR1020160004199 A KR 1020160004199A KR 20160004199 A KR20160004199 A KR 20160004199A KR 101667180 B1 KR101667180 B1 KR 101667180B1
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- chalcogenide
- insulating film
- light absorbing
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- absorbing layer
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- 150000004770 chalcogenides Chemical class 0.000 title claims abstract description 142
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 238000000151 deposition Methods 0.000 claims abstract description 24
- 238000002161 passivation Methods 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 204
- 239000002356 single layer Substances 0.000 claims description 39
- 229920000642 polymer Polymers 0.000 claims description 25
- 238000005229 chemical vapour deposition Methods 0.000 claims description 17
- 239000011669 selenium Substances 0.000 claims description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 238000004544 sputter deposition Methods 0.000 claims description 13
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 12
- 238000000231 atomic layer deposition Methods 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- 239000011810 insulating material Substances 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 11
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 10
- 229910052711 selenium Inorganic materials 0.000 claims description 10
- 239000011135 tin Substances 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 7
- 239000005083 Zinc sulfide Substances 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000011593 sulfur Substances 0.000 claims description 7
- 229910052717 sulfur Inorganic materials 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 claims description 6
- 229910000331 cadmium sulfate Inorganic materials 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 238000001459 lithography Methods 0.000 claims description 4
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 4
- 229910000611 Zinc aluminium Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000000224 chemical solution deposition Methods 0.000 claims description 2
- 238000009210 therapy by ultrasound Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000031700 light absorption Effects 0.000 abstract description 6
- 239000004793 Polystyrene Substances 0.000 description 30
- 229920002223 polystyrene Polymers 0.000 description 29
- 238000005215 recombination Methods 0.000 description 14
- 230000006798 recombination Effects 0.000 description 14
- 239000000243 solution Substances 0.000 description 9
- 230000000704 physical effect Effects 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000009987 spinning Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- 238000010549 co-Evaporation Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 230000010748 Photoabsorption Effects 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001127 nanoimprint lithography Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- AFNRRBXCCXDRPS-UHFFFAOYSA-N tin(ii) sulfide Chemical compound [Sn]=S AFNRRBXCCXDRPS-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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Abstract
Description
The following examples relate to a chalcogenide-based solar cell and a method of fabricating the same. More specifically, the present invention relates to a solar cell using a chalcogenide-based solar cell, The present invention relates to a technology for applying a novel conceptual passivation structure based on passivated emitters and rear cells (PERC) to a solar cell including a chalcogenide light absorbing layer composed of at least one of them.
The chalcogenide-based solar cell is formed to include a lower electrode layer, a chalcogenide light absorbing layer, a buffer layer, and an upper transparent oxidizing electrode layer. The performance of such a chalcogenide-based solar cell is determined by a short circuit current (Jsc) and an open circuit voltage (Voc).
In this case, since the thickness of the chalcogenide light absorbing layer in the conventional chalcogenide-based solar cell is very thin, the surface recombination velocity at the interface between the lower electrode layer and the chalcogenide light absorbing layer must be low for high performance and high efficiency do.
However, in a conventional chalcogenide-based solar cell, since the lower electrode layer and the chalcogenide light absorbing layer are in direct contact with each other and the interface defect is present at the interface between the lower electrode layer and the chalcogenide light absorbing layer, the number of dangling bonds , The surface recombination speed at the interface between the lower electrode layer and the chalcogenide light absorbing layer becomes very high, so that it is difficult to effectively capture the charge and the open circuit voltage is lowered.
Therefore, the following embodiments can suppress the electron hole pair recombination at the interface between the lower electrode layer and the chalcogenide light absorbing layer in the chalcogenide-based solar cell, reduce the surface recombination speed, charge carrier lifetime) to increase the photo-conversion efficiency and to improve the open-circuit voltage.
In one embodiment, by applying a novel conceptual passivation structure based on PERC having a local back surface field (LBSF), it is possible to suppress the recombination of electrons and holes at the interface between the lower electrode layer and the chalcogenide light absorbing layer, , A charge carrier lifetime is increased to increase the light conversion efficiency, and an open circuit voltage is increased, and a method of manufacturing the same.
More specifically, in one embodiment, an insulating film including a contact hole is formed between the lower electrode layer and the chalcogenide light absorbing layer, thereby minimizing an area in which the lower electrode layer and the chalcogenide light absorbing layer are directly in contact with each other, A chalcogenide-based solar cell in which a charge flow is formed through holes, and a method of manufacturing the same.
Further, in one embodiment, the lower electrode layer and the chalcogenide light absorbing layer are optimized by adjusting physical properties of the lower electrode layer and the chalcogenide light absorbing layer in consideration of the insulating film formed between the lower electrode layer and the chalcogenide light absorbing layer, Based solar cell and a manufacturing method thereof.
In addition, one embodiment of the present invention is a chalcogenide-based solar cell in which a buffer layer and an upper transparent oxide electrode layer are optimized by controlling physical properties of a buffer layer and an upper transparent oxidation electrode layer as well as a lower electrode layer and a chalcogenide light absorption layer, ≪ / RTI >
According to one embodiment, a method of fabricating a chalcogenide-based solar cell using a novel conceptual passivation structure includes forming an insulating film including a contact hole on at least a portion of a substrate; Depositing a chalcogenide light absorbing layer on the insulating film; Forming a buffer layer on the chalcogenide light absorbing layer; And depositing a transparent conductive oxide (TCO) on the buffer layer.
The step of forming an insulating film including a contact hole on at least a portion of the substrate includes: forming a polymer monolayer on at least a portion of the substrate using nanoscale lithography; An insulating material is deposited on the polymer monolayer by at least one of chemical vapor deposition (CVD), sputtering, atomic layer deposition, and e-beam evaporation to form the insulating film ; And removing the polymer monolayer from the insulating film to produce the contact hole.
The step of creating a polymer monolayer on at least a portion of the substrate may include forming a polymer monolayer on the substrate using at least one of size, spacing, or depth of the contact hole, To form the polymer monolayer to be constituted.
The step of creating the polymer monolayer can further comprise etching at least a portion of the polymer monolayer formed on at least a portion of the substrate based on at least any of the size, spacing or depth at which the contact hole is created have.
The step of removing the polymer monolayer from the insulating layer may include ultrasonic treatment of the insulating layer using a toluene solution.
The insulating material may include at least one of a metal oxide or nitride having an insulating band energy.
The step of depositing the chalcogenide light absorbing layer on the insulating layer may be performed by using at least one of chemical vapor deposition, sputtering, atomic layer deposition, spin-coating, or thermal co-evaporation And depositing the chalcogenide light absorbing layer composed of at least one of selenium (Se), sulfur (S), copper (Cu), zinc (Zn), and tin (Sn) in the insulating film.
The step of depositing the chalcogenide light absorbing layer on the insulating film may further include adjusting a temperature of the substrate on which the insulating film is formed based on the thickness of the chalcogenide light absorbing layer.
The step of depositing a chalcogenide light absorbing layer on the insulating layer may include heat treating the chalcogenide light absorbing layer deposited on the insulating layer to adjust at least one of a doping concentration or a grain size of the chalcogenide light absorbing layer The method comprising the steps of:
The step of forming the buffer layer on the chalcogenide light absorbing layer may be performed by using at least one of chemical vapor deposition, and depositing the buffer layer composed of at least one of cadmium sulfate (CdS), zinc sulfide (ZnS), and indium sulfide (InS).
The step of depositing the transparent conductive oxide layer in the buffer layer may include depositing the transparent conductive oxide layer made of at least one of tin oxide, indium tin oxide, zinc oxide or aluminum doped in the buffer layer using sputtering Step < / RTI >
According to one embodiment, a chalcogenide-based solar cell utilizing a novel conceptual passivation structure comprises a substrate; An insulating film formed on at least a portion of the substrate, the insulating film including a contact hole; A chalcogenide light absorbing layer deposited on the insulating film; A buffer layer formed on the chalcogenide light absorbing layer; And a transparent conductive oxide (TCO) layer deposited on the buffer layer.
Wherein the insulating film is formed through the following steps: (a) forming a polymer monolayer on at least a portion of the substrate using a nanopatterning process; An insulating material is deposited on the polymer monolayer by at least one of chemical vapor deposition (CVD), sputtering, atomic layer deposition, and e-beam evaporation to form the insulating film ; And removing the polymer monolayer from the insulating film to produce the contact hole.
The chalcogenide light absorbing layer is formed through the following process, and the process may be performed by any one of chemical vapor deposition, sputtering, atomic layer deposition, spin-coating, or thermal co-evaporation The step of depositing the chalcogenide light absorbing layer composed of at least one of selenium (Se), sulfur (S), copper (Cu), zinc (Zn) or tin (Sn) .
In one embodiment, by applying a novel conceptual passivation structure based on PERC having a local back surface field (LBSF), it is possible to suppress the recombination of electrons and holes at the interface between the lower electrode layer and the chalcogenide light absorbing layer, , A charge carrier lifetime is increased to increase light conversion efficiency, and an open circuit voltage is increased, and a fabrication method thereof.
More specifically, in one embodiment, an insulating film including a contact hole is formed between the lower electrode layer and the chalcogenide light absorbing layer, thereby minimizing an area in which the lower electrode layer and the chalcogenide light absorbing layer are directly in contact with each other, A chalcogenide-based solar cell in which a charge flow is formed through holes, and a manufacturing method thereof.
Therefore, in one embodiment, while the recombination of electrons and holes in the interface between the lower electrode layer and the chalcogenide light absorbing layer is suppressed, the optical signal of the longer wavelength band in the photon efficiency curve is absorbed to the deep region of the chalcogenide light absorbing layer, It is possible to provide a chalcogenide-based solar cell that improves the recombination of electrons and holes in a deep region of the chalcogenide light absorption layer, and a manufacturing method thereof.
Further, in one embodiment, the lower electrode layer and the chalcogenide light absorbing layer are optimized by adjusting physical properties of the lower electrode layer and the chalcogenide light absorbing layer in consideration of the insulating film formed between the lower electrode layer and the chalcogenide light absorbing layer, Based solar cell and a manufacturing method thereof.
In addition, one embodiment of the present invention is a chalcogenide-based solar cell in which a buffer layer and an upper transparent oxide electrode layer are optimized by controlling physical properties of a buffer layer and an upper transparent oxidation electrode layer as well as a lower electrode layer and a chalcogenide light absorption layer, Method can be provided.
1 is a diagram illustrating a chalcogenide-based solar cell according to one embodiment.
FIG. 2 illustrates a method of fabricating a chalcogenide-based solar cell according to an embodiment.
3 is a diagram specifically showing a step of forming the insulating film shown in FIG.
4 is a scanning electron microscope (SEM) photograph showing an insulating film formed according to a process according to an embodiment.
5 is a scanning electron micrograph showing a chalcogenide light absorbing layer deposited according to a process according to one embodiment.
FIG. 6 is a graph showing a current-voltage graph and an external quantum efficiency curve in a chalcogenide-based solar cell according to an embodiment.
Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to or limited by the embodiments. In addition, the same reference numerals shown in the drawings denote the same members.
Also, terminologies used herein are terms used to properly represent preferred embodiments of the present invention, which may vary depending on the user, intent of the operator, or custom in the field to which the present invention belongs. Therefore, the definitions of these terms should be based on the contents throughout this specification.
1 is a diagram illustrating a chalcogenide-based solar cell according to one embodiment.
Referring to FIG. 1, a chalcogenide-based
The
The
Hereinafter, the
Here, the material constituting the
At this time, the thickness of the
The size, spacing or depth of the
The chalcogenide
The material constituting the chalcogenide
The
The transparent
Thus, the chalcogenide-based
The chalcogenide-based
The chalcogenide-based
At this time, the physical properties of the
Therefore, the material and the physical structure of each of the
A detailed description of a process for manufacturing the chalcogenide-based
FIG. 2 illustrates a method of fabricating a chalcogenide-based solar cell according to an embodiment.
Referring to FIG. 2, a system for manufacturing a chalcogenide-based solar cell according to an embodiment (hereinafter referred to as a fabrication system) includes an insulating
At this time, the fabrication system uses an nano-pattern process (nanoscale lithography) to form an insulating
Here, a semiconductor substrate formed by stacking a metal material such as molybdenum (Mo) may be used as the
Next, the fabrication system deposits a chalcogenide
For example, the fabrication system may be fabricated using at least one of the following methods: chemical vapor deposition, sputtering, atomic layer deposition, spin-coating, or thermal co-evaporation. A chalcogenide
More specifically, the fabrication system deposits copper, zinc and tin on the insulating
At this time, in the process of depositing the chalcogenide
In addition, since defects that cause P-type conductivity are generated in accordance with the fine deposition process conditions, the fabrication system uses an X-ray energy spectrometer or energy dispersive x-ray spectroscopy (EDAX, EDS, EDX) After the composition of the
Here, the temperature and time of the heat treatment performed on the chalcogenide
The fabrication system then creates a
For example, the fabrication system may include at least one of a buffer layer 240 (at least one of cadmium sulfide, zinc sulfide, and indium sulfide) using at least one of a chemical vapor deposition method, an atomic layer deposition method and a chemical bath deposition method ) Can be deposited.
More specifically, for example, the production system may be a cadmium sulfide solution (
The fabrication system then deposits a transparent
Also, although not shown in the figure, the fabrication system may also deposit nickel or aluminum on the transparent
3 is a diagram specifically showing a step of forming the insulating film shown in FIG.
Referring to FIG. 3, a fabrication system according to one embodiment may produce a polystyrene (PS)
Hereinafter, the insulating
For example, the fabrication system may be fabricated on the basis of at least one of the size, spacing, or depth of the contact hole 330 (at least one of the size, spacing, or depth of the
At this time, at least one of the size, spacing, or depth at which the
The nano-patterning process used by the fabrication system may include at least one of electron-beam lithography, nanoimprint lithography, and nano-spherical lithography. However, without being limited thereto, the fabrication system can utilize various nanopatterning processes.
More specifically, for example, the fabrication system has a diameter of 200
Here, at least one of the size or the molarity of the spherical polystyrene particles forming the spinning solution can be adjusted based on at least any of the size, spacing, or depth at which the
The fabrication system may then etch at least a portion of the resulting
For example, if the size of the
However, the size, spacing, and depth of the polystyrene particles can be variously adjusted in the course of forming the spinning solution and etching at least a portion of the
The fabrication system is then subjected to at least one of the following methods: chemical vapor deposition, sputtering, atomic layer deposition, or e-beam evaporation. The insulating
For example, the fabrication system uses an electron beam deposition method to deposit an insulating material such as a metal oxide or nitride having an insulating band energy on the polystyrene
Here, the thickness at which the insulating
The fabrication system can then remove the
For example, in the manufacturing system, a toluene solution is used to ultrasonically process the insulating
Since the insulating
4 is a scanning electron microscope (SEM) photograph showing an insulating film formed according to a process according to an embodiment.
Referring to FIG. 4, the insulating
Accordingly, a charge flow can be formed between the substrate and the chalcogenide light absorbing layer through the contact hole, and the substrate and the chalcogenide light absorbing layer can be formed by the remaining region of the insulating
5 is a scanning electron micrograph showing a chalcogenide light absorbing layer deposited according to a process according to one embodiment.
Referring to FIG. 5, since the chalcogenide-based
FIG. 6 is a graph showing a current-voltage graph and an external quantum efficiency curve in a chalcogenide-based solar cell according to an embodiment.
Referring to the current-
In the current-
Also, referring to the
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. For example, it is to be understood that the techniques described may be performed in a different order than the described methods, and / or that components of the described systems, structures, devices, circuits, Lt; / RTI > or equivalents, even if it is replaced or replaced.
Therefore, other implementations, other embodiments, and equivalents to the claims are also within the scope of the following claims.
Claims (14)
Forming an insulating film including a contact hole on at least a portion of the substrate;
Depositing a chalcogenide light absorbing layer on the insulating film;
Forming a buffer layer on the chalcogenide light absorbing layer; And
Depositing a transparent conductive oxide (TCO) layer on the buffer layer
≪ / RTI > wherein the method comprises the steps of:
The step of forming an insulating film including a contact hole on at least a part of the substrate
Using a nanoscale lithography to create a polymer monolayer on at least a portion of the substrate;
An insulating material is deposited on the polymer monolayer by at least one of chemical vapor deposition (CVD), sputtering, atomic layer deposition, and e-beam evaporation to form the insulating film ; And
Removing the polymer monolayer in the insulating film to produce the contact hole
≪ / RTI > wherein the method comprises the steps of:
The step of creating a polymer monolayer on at least a portion of the substrate
Forming a polymer monolayer composed of polymer particles in hexagonal shape using a self-assemble phenomenon based on at least any of the size, the interval, and the depth at which the contact hole is created
≪ / RTI > wherein the method comprises the steps of:
The step of producing the polymer monolayer
Etching at least a portion of the polymer monolayer formed on at least a portion of the substrate based on at least any of the size, spacing, or depth at which the contact hole is created
Based on the total weight of the solar cell.
The step of removing the polymer monolayer from the insulating film
Performing ultrasonic treatment on the insulating film using a toluene solution
≪ / RTI > wherein the method comprises the steps of:
The insulating material
A method of manufacturing a chalcogenide-based solar cell comprising at least one of a metal oxide or nitride having an insulating band energy.
The step of depositing a chalcogenide light absorbing layer on the insulating film
Selenium (Se), sulfur (S), and selenium (S) may be added to the insulating film by using at least one of a chemical vapor deposition method, a sputtering method, an atomic layer deposition method, a spin-coating method or a thermal co- , A step of depositing the chalcogenide light absorbing layer composed of at least one of copper (Cu), zinc (Zn), and tin (Sn)
≪ / RTI > wherein the method comprises the steps of:
The step of depositing a chalcogenide light absorbing layer on the insulating film
Adjusting a temperature of the substrate on which the insulating film is formed based on a thickness of the chalcogenide light absorbing layer to be deposited,
Based on the total weight of the solar cell.
The step of depositing a chalcogenide light absorbing layer on the insulating film
Performing a heat treatment on the chalcogenide light absorbing layer deposited on the insulating film to control at least one of a doping concentration or a grain size of the chalcogenide light absorbing layer
Based on the total weight of the solar cell.
The step of forming the buffer layer on the chalcogenide light absorbing layer
Cadmium sulfate (CdS), zinc sulfide (ZnS) or the like is added to the chalcogenide light absorbing layer by using at least one of a chemical vapor deposition method, an atomic layer deposition method, and a chemical bath deposition method. Or indium sulfide (InS) is deposited on the buffer layer
≪ / RTI > wherein the method comprises the steps of:
The step of depositing the transparent conductive oxide layer in the buffer layer
Depositing the transparent conductive oxide layer made of at least one of tin oxide, indium tin oxide, zinc oxide or aluminum-doped zinc oxide in the buffer layer by sputtering;
≪ / RTI > wherein the method comprises the steps of:
Board;
An insulating film formed on at least a portion of the substrate, the insulating film including a contact hole;
A chalcogenide light absorbing layer deposited on the insulating film;
A buffer layer formed on the chalcogenide light absorbing layer; And
A transparent conductive oxide (TCO) layer deposited on the buffer layer,
Based solar cell.
The insulating film is formed through the following steps,
The processes include
Using a nanopatterning process to create a polymer monolayer on at least a portion of the substrate;
An insulating material is deposited on the polymer monolayer by at least one of chemical vapor deposition (CVD), sputtering, atomic layer deposition, and e-beam evaporation to form the insulating film ; And
Removing the polymer monolayer in the insulating film to produce the contact hole
Based solar cell.
The chalcogenide light absorbing layer is formed through the following steps,
The process
Selenium (Se), sulfur (S), and selenium (S) may be added to the insulating film by at least one of a chemical vapor deposition method, a sputtering method, an atomic layer deposition method, a spin-coating method or a thermal co- , A step of depositing the chalcogenide light absorbing layer composed of at least one of copper (Cu), zinc (Zn), and tin (Sn)
Based solar cell.
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| KR102408206B1 (en) * | 2021-10-28 | 2022-06-15 | 전남대학교산학협력단 | SnS THIN FLIM SOLAR CELL WITH CONTROLLED SURFACE DEFECTS AND MENUFACTURING METHOD OF THE SAME |
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