TWI419193B - 離子束處理電介質表面的方法及實施該方法的裝置 - Google Patents

離子束處理電介質表面的方法及實施該方法的裝置 Download PDF

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Publication number
TWI419193B
TWI419193B TW96117921A TW96117921A TWI419193B TW I419193 B TWI419193 B TW I419193B TW 96117921 A TW96117921 A TW 96117921A TW 96117921 A TW96117921 A TW 96117921A TW I419193 B TWI419193 B TW I419193B
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TW
Taiwan
Prior art keywords
dielectric
cathode
treated
ion
magnetic flux
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TW96117921A
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English (en)
Chinese (zh)
Other versions
TW200847216A (en
Inventor
Vladimir Shiripov
Mikalai Leuchuk
Sergei Maryshev
Vladzimir Savenka
Ayrat Khisamov
Aleksander Khokhlov
Original Assignee
Vladimir Shiripov
Mikalai Leuchuk
Sergei Maryshev
Vladzimir Savenka
Ayrat Khisamov
Aleksander Khokhlov
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Application filed by Vladimir Shiripov, Mikalai Leuchuk, Sergei Maryshev, Vladzimir Savenka, Ayrat Khisamov, Aleksander Khokhlov filed Critical Vladimir Shiripov
Publication of TW200847216A publication Critical patent/TW200847216A/zh
Application granted granted Critical
Publication of TWI419193B publication Critical patent/TWI419193B/zh

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  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Cleaning In General (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
TW96117921A 2006-08-16 2007-05-18 離子束處理電介質表面的方法及實施該方法的裝置 TWI419193B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EA200601832A EA009514B1 (ru) 2006-08-16 2006-08-16 Способ ионной обработки поверхности диэлектрика и устройство для осуществления способа

Publications (2)

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TW200847216A TW200847216A (en) 2008-12-01
TWI419193B true TWI419193B (zh) 2013-12-11

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TW96117921A TWI419193B (zh) 2006-08-16 2007-05-18 離子束處理電介質表面的方法及實施該方法的裝置

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JP (1) JP5241169B2 (ja)
CN (1) CN101126147B (ja)
EA (1) EA009514B1 (ja)
TW (1) TWI419193B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102751154A (zh) * 2011-04-22 2012-10-24 上海凯世通半导体有限公司 离子注入实时检测和控制装置
GB201216138D0 (en) * 2012-09-11 2012-10-24 Gencoa Ltd Plasma source
RU170626U1 (ru) * 2016-10-31 2017-05-03 Федеральное государственное бюджетное образовательное учреждение высшего образования "Томский государственный университет систем управления и радиоэлектроники" (ТУСУР) Установка локального ионного травления диэлектрических поверхностей
CN109003940A (zh) * 2018-07-18 2018-12-14 深圳市华星光电技术有限公司 Tft阵列基板及其制作方法
JP7239688B2 (ja) * 2019-01-30 2023-03-14 アプライド マテリアルズ インコーポレイテッド 減圧システムを洗浄するための方法、基板の減圧処理のための方法、及び基板を減圧処理するための装置

Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH01283373A (ja) * 1988-05-10 1989-11-14 Matsushita Electric Ind Co Ltd 薄膜の製造方法
US6454910B1 (en) * 2001-09-21 2002-09-24 Kaufman & Robinson, Inc. Ion-assisted magnetron deposition
TW200416768A (en) * 2003-02-21 2004-09-01 Axcelis Tech Inc Adjustable implantation angle workpiece support structure for an ion beam implanter utilizing a linear scan motor

Family Cites Families (7)

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Publication number Priority date Publication date Assignee Title
US5136171A (en) * 1990-03-02 1992-08-04 Varian Associates, Inc. Charge neutralization apparatus for ion implantation system
RU2058428C1 (ru) * 1990-07-24 1996-04-20 Санкт-Петербургский государственный электротехнический университет им.В.И.Ульянова (Ленина) Устройство для нанесения покрытий в вакууме
US5466929A (en) * 1992-02-21 1995-11-14 Hitachi, Ltd. Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus
RU2224050C2 (ru) * 1998-03-31 2004-02-20 Н.В.Бекарт С.А. Способ и устройство для осаждения двухосно текстурированных покрытий
US6313428B1 (en) * 1999-10-12 2001-11-06 Advanced Ion Beam Technology, Inc. Apparatus and method for reducing space charge of ion beams and wafer charging
JP3680274B2 (ja) * 2002-03-27 2005-08-10 住友イートンノバ株式会社 イオンビームの電荷中和装置とその方法
FR2856677B1 (fr) * 2003-06-27 2006-12-01 Saint Gobain Substrat revetu d'une couche dielectrique et procede pour sa fabrication

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01283373A (ja) * 1988-05-10 1989-11-14 Matsushita Electric Ind Co Ltd 薄膜の製造方法
US6454910B1 (en) * 2001-09-21 2002-09-24 Kaufman & Robinson, Inc. Ion-assisted magnetron deposition
TW200416768A (en) * 2003-02-21 2004-09-01 Axcelis Tech Inc Adjustable implantation angle workpiece support structure for an ion beam implanter utilizing a linear scan motor

Also Published As

Publication number Publication date
CN101126147A (zh) 2008-02-20
EA200601832A1 (ru) 2008-02-28
JP5241169B2 (ja) 2013-07-17
JP2008047535A (ja) 2008-02-28
CN101126147B (zh) 2012-12-05
EA009514B1 (ru) 2008-02-28
TW200847216A (en) 2008-12-01

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