TWI419193B - 離子束處理電介質表面的方法及實施該方法的裝置 - Google Patents
離子束處理電介質表面的方法及實施該方法的裝置 Download PDFInfo
- Publication number
- TWI419193B TWI419193B TW96117921A TW96117921A TWI419193B TW I419193 B TWI419193 B TW I419193B TW 96117921 A TW96117921 A TW 96117921A TW 96117921 A TW96117921 A TW 96117921A TW I419193 B TWI419193 B TW I419193B
- Authority
- TW
- Taiwan
- Prior art keywords
- dielectric
- cathode
- treated
- ion
- magnetic flux
- Prior art date
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- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Cleaning In General (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EA200601832A EA009514B1 (ru) | 2006-08-16 | 2006-08-16 | Способ ионной обработки поверхности диэлектрика и устройство для осуществления способа |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200847216A TW200847216A (en) | 2008-12-01 |
TWI419193B true TWI419193B (zh) | 2013-12-11 |
Family
ID=39094280
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW96117921A TWI419193B (zh) | 2006-08-16 | 2007-05-18 | 離子束處理電介質表面的方法及實施該方法的裝置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5241169B2 (ja) |
CN (1) | CN101126147B (ja) |
EA (1) | EA009514B1 (ja) |
TW (1) | TWI419193B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102751154A (zh) * | 2011-04-22 | 2012-10-24 | 上海凯世通半导体有限公司 | 离子注入实时检测和控制装置 |
GB201216138D0 (en) * | 2012-09-11 | 2012-10-24 | Gencoa Ltd | Plasma source |
RU170626U1 (ru) * | 2016-10-31 | 2017-05-03 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Томский государственный университет систем управления и радиоэлектроники" (ТУСУР) | Установка локального ионного травления диэлектрических поверхностей |
CN109003940A (zh) * | 2018-07-18 | 2018-12-14 | 深圳市华星光电技术有限公司 | Tft阵列基板及其制作方法 |
JP7239688B2 (ja) * | 2019-01-30 | 2023-03-14 | アプライド マテリアルズ インコーポレイテッド | 減圧システムを洗浄するための方法、基板の減圧処理のための方法、及び基板を減圧処理するための装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01283373A (ja) * | 1988-05-10 | 1989-11-14 | Matsushita Electric Ind Co Ltd | 薄膜の製造方法 |
US6454910B1 (en) * | 2001-09-21 | 2002-09-24 | Kaufman & Robinson, Inc. | Ion-assisted magnetron deposition |
TW200416768A (en) * | 2003-02-21 | 2004-09-01 | Axcelis Tech Inc | Adjustable implantation angle workpiece support structure for an ion beam implanter utilizing a linear scan motor |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5136171A (en) * | 1990-03-02 | 1992-08-04 | Varian Associates, Inc. | Charge neutralization apparatus for ion implantation system |
RU2058428C1 (ru) * | 1990-07-24 | 1996-04-20 | Санкт-Петербургский государственный электротехнический университет им.В.И.Ульянова (Ленина) | Устройство для нанесения покрытий в вакууме |
US5466929A (en) * | 1992-02-21 | 1995-11-14 | Hitachi, Ltd. | Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus |
RU2224050C2 (ru) * | 1998-03-31 | 2004-02-20 | Н.В.Бекарт С.А. | Способ и устройство для осаждения двухосно текстурированных покрытий |
US6313428B1 (en) * | 1999-10-12 | 2001-11-06 | Advanced Ion Beam Technology, Inc. | Apparatus and method for reducing space charge of ion beams and wafer charging |
JP3680274B2 (ja) * | 2002-03-27 | 2005-08-10 | 住友イートンノバ株式会社 | イオンビームの電荷中和装置とその方法 |
FR2856677B1 (fr) * | 2003-06-27 | 2006-12-01 | Saint Gobain | Substrat revetu d'une couche dielectrique et procede pour sa fabrication |
-
2006
- 2006-08-16 EA EA200601832A patent/EA009514B1/ru not_active IP Right Cessation
-
2007
- 2007-05-18 TW TW96117921A patent/TWI419193B/zh not_active IP Right Cessation
- 2007-05-18 CN CN 200710107941 patent/CN101126147B/zh not_active Expired - Fee Related
- 2007-08-15 JP JP2007211954A patent/JP5241169B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01283373A (ja) * | 1988-05-10 | 1989-11-14 | Matsushita Electric Ind Co Ltd | 薄膜の製造方法 |
US6454910B1 (en) * | 2001-09-21 | 2002-09-24 | Kaufman & Robinson, Inc. | Ion-assisted magnetron deposition |
TW200416768A (en) * | 2003-02-21 | 2004-09-01 | Axcelis Tech Inc | Adjustable implantation angle workpiece support structure for an ion beam implanter utilizing a linear scan motor |
Also Published As
Publication number | Publication date |
---|---|
CN101126147A (zh) | 2008-02-20 |
EA200601832A1 (ru) | 2008-02-28 |
JP5241169B2 (ja) | 2013-07-17 |
JP2008047535A (ja) | 2008-02-28 |
CN101126147B (zh) | 2012-12-05 |
EA009514B1 (ru) | 2008-02-28 |
TW200847216A (en) | 2008-12-01 |
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MM4A | Annulment or lapse of patent due to non-payment of fees |