TWI418957B - Recycling method for resist stripper scrapped and recycling device for the same - Google Patents
Recycling method for resist stripper scrapped and recycling device for the same Download PDFInfo
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- TWI418957B TWI418957B TW096107176A TW96107176A TWI418957B TW I418957 B TWI418957 B TW I418957B TW 096107176 A TW096107176 A TW 096107176A TW 96107176 A TW96107176 A TW 96107176A TW I418957 B TWI418957 B TW I418957B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3042—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations
- G03F7/3071—Process control means, e.g. for replenishing
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
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- Engineering & Computer Science (AREA)
- Automation & Control Theory (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Heat Treatment Of Water, Waste Water Or Sewage (AREA)
- Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Extraction Or Liquid Replacement (AREA)
Description
本發明係關於一種光阻剝離廢液再製方法及再製裝置，特別係關於一種於再製包含水、光阻、胺化合物、有機溶劑之光阻剝離廢液之方法中，經濟性良好地再製於使用包含各種特別之胺化合物之剝離液之剝離步驟及使用各種光阻及剝離液之情形所產生之光阻剝離廢液的光阻剝離廢液再製方法及再製裝置。The invention relates to a method for reprocessing a photoresist stripping waste liquid and a remanufacturing device, in particular to a method for remanufacturing a photoresist stripping waste liquid containing water, a photoresist, an amine compound and an organic solvent, which is economically remanufactured in use. A stripping step of a stripping solution containing various special amine compounds, and a photoresist stripping waste liquid reconstituting method and a remanufacturing apparatus which are used in the case of using various photoresists and stripping liquids.
為了製造積體電路(IC)、高積體電路(LSI)、超高積體電路(VLSI)等半導體元件及液晶顯示元件等顯示器裝置，會反覆地實施多階段的光蝕刻步驟及光阻剝離步驟，藉此產生大量的光阻剝離廢液。特別是因液晶顯示元件等顯示器基板面積的急速大型化，剝離液的使用量大幅增加，關於剝離廢液再利用之要求進而高漲。In order to manufacture semiconductor devices such as integrated circuits (IC), high-integrated circuits (LSI), and ultra-high-level integrated circuits (VLSI), and display devices such as liquid crystal display devices, multi-step photo-etching steps and photoresist stripping are repeatedly performed. The step of thereby generating a large amount of photoresist stripping waste liquid. In particular, the amount of use of the peeling liquid has been greatly increased due to the rapid increase in the size of the display substrate such as the liquid crystal display device, and the demand for recycling the waste liquid has further increased.
於光阻剝離步驟中所使用之剝離液廢液，包含光阻、水分、各種有機胺化合物及有機溶劑。先前用以廢棄處理此種剝離液廢液之方法，一般採用焚燒處理之方法，但此種方法會將焚燒氣體排放至大氣中，不僅對環境帶來不良影響，且連剝離液廢液中之可再利用的成分都廢棄掉，因此由經濟面考量並不佳，故進行有很多關於剝離廢液之再製的研究。The stripping liquid waste liquid used in the photoresist stripping step contains photoresist, moisture, various organic amine compounds, and an organic solvent. The method used to dispose of such a stripping liquid waste liquid is generally incinerated, but this method will discharge the incineration gas into the atmosphere, which not only adversely affects the environment, but also in the stripping liquid waste liquid. The reusable ingredients are discarded, so the economic side is not considered well, so there are many studies on the re-manufacturing of the stripping waste liquid.
又，最近，由於半導體及顯示器製造步驟中進一步要求精密度及特性化，因此大多進行將最適用於各個步驟之光阻加以細分，於各個剝離步驟中所使用之光阻剝離液之成分亦細分成各種有機胺、有機溶劑之種類及含量而使用。Further, recently, since precision and characterization are further required in the semiconductor and display manufacturing steps, the photoresist which is most suitable for each step is often subdivided, and the components of the photoresist stripping liquid used in each peeling step are also subdivided. It is used in various types and contents of various organic amines and organic solvents.
作為對光阻剝離廢液之再製之試驗之一例，於下述專利文獻1(大韓民國專利申請第10－2002－0075235號)中係揭示有一種光阻剝離廢液之再製裝置，其係用以再製含有烷醇胺、有機溶劑及光阻之光阻剝離廢液者，具有：膜分離裝置，係具有截取分子量100~1500之膜，使用前述膜將前述光阻剝離廢液分離成濃縮液及透過液者；濃度調整槽，係用以貯藏前述透過液，調整前述透過液中之烷醇胺及有機溶劑之濃度者；烷醇胺供給機構，係供給烷醇胺至前述濃度調整槽者；及有機溶劑供給機構，係供給有機溶劑至前述濃度調整槽者。前述方法係利用光阻剝離廢液中所含之烷醇胺及有機溶劑通過奈米膜、光阻未通過之性質，而再製剝離液之方法。As an example of the rework of the photoresist stripping waste liquid, a remanufacturing device for the photoresist stripping waste liquid is disclosed in the following Patent Document 1 (the Korean Patent Application No. 10-2002-0075235). Remanufacturing a photoresist stripping waste liquid containing an alkanolamine, an organic solvent and a photoresist, comprising: a membrane separation device having a membrane having a molecular weight of 100 to 1500, and separating the photoresist stripping waste liquid into a concentrate using the membrane; a permeate; a concentration adjustment tank for storing the permeate to adjust a concentration of the alkanolamine and the organic solvent in the permeate; and an alkanolamine supply mechanism for supplying the alkanolamine to the concentration adjustment tank; And an organic solvent supply means which supplies an organic solvent to the said density adjustment tank. The above method is a method of re-preparing a stripping liquid by using an alkanolamine and an organic solvent contained in the photoresist stripping waste liquid to pass through a property of a nano film and a photoresist.
又，除此之外，亦有各種關於光阻剝離廢液之再製之試驗正進行中，但並不適用於為了將有機溶劑及各種胺化合物暫時分離，而再製使用特別之胺化合物之分別細分化之光蝕刻液及於剝離步驟所產生之剝離廢液上，又，於半導體及顯示器製造步驟中使用各種光阻及剝離液之情形，既存之用以將有機溶劑及各種胺化合物暫時分離之光阻剝離廢液再製方法係存有極限，因此進一步需要可將光阻剝離廢液中之光阻、水分及有機胺化合物去除，僅經濟性地再製有機溶劑之方法。In addition, there are various tests for the re-production of photoresist stripping waste liquid, but it is not suitable for the separate subdivision of special amine compounds for the temporary separation of organic solvents and various amine compounds. The photo-etching solution and the stripping waste liquid generated in the stripping step, and the use of various photoresists and stripping liquids in the semiconductor and display manufacturing steps, which are used to temporarily separate the organic solvent and various amine compounds. There is a limit to the method for reprocessing the photoresist stripping waste liquid. Therefore, there is a further need for a method for removing the photoresist, moisture, and organic amine compounds in the photoresist stripping waste liquid, and economically remanufacturing the organic solvent.
[專利文獻1]大韓民國專利申請第10－2002－0075235號[Patent Document 1] Republic of Korea Patent Application No. 10-2002-0075235
為了解決先前技術之問題，本發明之目的係提供一種光阻剝離廢液再製方法及再製裝置，其可無關於光阻剝離液中所包含之胺化合物之種類，再製高價之有機溶劑，作為光阻剝離液再利用，藉此進一步減少因光阻剝離廢液所造成之環境污染，且藉由再利用高價之有機溶劑，可進一步減少費用。In order to solve the problems of the prior art, the object of the present invention is to provide a method for reprocessing a photoresist stripping waste liquid and a remanufacturing device, which can be used as a light without regard to the kind of the amine compound contained in the resist stripper. The repellent liquid is reused, thereby further reducing the environmental pollution caused by the photoresist stripping waste liquid, and further reducing the cost by reusing the expensive organic solvent.
本發明之另一目的係提供一種光阻剝離廢液再製方法及再製裝置，其適用於使用包含各種特別之胺化合物之剝離液之剝離步驟及使用各種光阻及剝離液之情形，經濟性良好地同時再製光阻剝離廢液。Another object of the present invention is to provide a method and a remanufacturing device for photoresist stripping waste liquid, which are suitable for use in a stripping step using a stripping solution containing various special amine compounds and in the case of using various photoresists and stripping liquids, and the economy is good. At the same time, the photoresist is stripped from the waste liquid.
為了達成前述目的，本發明係提供一種光阻剝離廢液再製方法，係再製包含水、光阻、胺化合物、有機溶劑之光阻剝離廢液者，其特徵在於包含：(a)添加與光阻剝離廢液之胺化合物反應，使胺化合物形成於蒸餾有機溶劑時不會被蒸餾之胺－酸化合物之酸的階段；及(b)分餾前述(a)階段之反應物，僅取得有機溶劑之階段。In order to achieve the above object, the present invention provides a method for reprocessing a photoresist stripping waste liquid, which is a method for remanufacturing a photoresist stripping waste liquid comprising water, a photoresist, an amine compound, and an organic solvent, comprising: (a) adding and light a step of reacting an amine compound which is a stripping waste liquid to form an amine compound in an acid which is not distilled when the organic solvent is distilled; and (b) fractionating the reactant of the above stage (a), and obtaining only an organic solvent The stage.
又，本發明係提供一種光阻剝離廢液再製裝置，其特徵在於包含：(a)包含水、光阻、胺化合物、有機溶劑之被處理光阻剝離廢液貯藏槽；(b)酸貯藏槽；(c)於自前述被處理光阻剝離廢液貯藏槽移送來之剝離廢液中添加自前述酸貯藏槽移送來之酸，使剝離廢液之胺化合物與酸反應之反應槽；(d)分餾自前述反應槽移送來之剝離廢液之蒸餾槽；及(e)收集於前述蒸餾槽分餾之有機溶劑並貯藏之有機溶劑貯藏槽。Moreover, the present invention provides a photoresist stripping waste liquid reconstituting apparatus, comprising: (a) a treated photoresist stripping waste liquid storage tank containing water, a photoresist, an amine compound, and an organic solvent; (b) an acid storage a tank (c) a reaction tank obtained by adding an acid transferred from the acid storage tank to the stripping waste liquid transferred from the treated photoresist stripping waste storage tank to react the amine compound of the stripping waste liquid with an acid; d) a distillation tank for fractionating the stripping waste liquid transferred from the reaction tank; and (e) an organic solvent storage tank which is collected and stored in the above-mentioned distillation tank.
依本發明之光阻剝離廢液再製方法及再製裝置，可無關於光阻剝離液中所包含之胺化合物之種類，再製高價之有機溶劑，作為光阻剝離液再利用，藉此進一步減少因光阻剝離廢液所造成之環境污染，且藉由再利用高價之有機溶劑，可進一步減少費用，特別具有適用於使用包含各種特別之胺化合物之剝離液之剝離步驟及使用各種光阻及剝離液之情形，經濟性良好地同時再製光阻剝離廢液之效果。According to the photoresist re-disposing waste liquid re-preparation method and the remanufacturing device of the present invention, the high-priced organic solvent can be re-used irrespective of the kind of the amine compound contained in the resist stripping liquid, thereby further reducing the cause The environmental pollution caused by the photoresist stripping waste liquid can further reduce the cost by reusing the expensive organic solvent, and particularly has a peeling step suitable for using a stripping liquid containing various special amine compounds and using various photoresists and stripping. In the case of liquid, it is economically good to simultaneously reproduce the effect of the photoresist stripping waste liquid.
第1圖係本發明之一實施形態之光阻剝離廢液再製裝置之模式圖。Fig. 1 is a schematic view showing a photoresist stripping waste liquid remanufacturing apparatus according to an embodiment of the present invention.
以下，詳細說明本發明。Hereinafter, the present invention will be described in detail.
本發明者發現，既存之光阻剝離廢液再製方法，即使在使用包含各種特別之胺化合物之剝離液之剝離步驟及使用各種光阻及剝離液之情形，藉由同時取得有機胺化合物及有機溶劑而再製光阻剝離廢液，亦與實際所使用之有機胺化合物不同，無法作為剝離液使用，因此，研究適用之經濟的再製方法，結果確認以經濟的方法將光阻剝離廢液中之光阻、水分及有機胺化合物去除，僅收集有機溶劑後，再度將適用於各種特別之剝離液之有機胺化合物添加於再製之有機溶劑中，製造光阻剝離液時，可解決全部的問題，終完成本發明。The present inventors have found that an existing method for remanufacturing a photoresist peeling waste liquid can simultaneously obtain an organic amine compound and an organic compound even in a peeling step using a stripping liquid containing various special amine compounds and a case where various photoresists and stripping liquids are used. The solvent-removed photoresist stripping waste liquid is also different from the organic amine compound actually used, and cannot be used as a stripping solution. Therefore, an economical re-manufacturing method is applied, and it is confirmed that the photoresist is peeled off in an economical manner. Removal of photoresist, moisture and organic amine compounds, and after only collecting the organic solvent, the organic amine compound suitable for various special stripping liquids is again added to the reconstituted organic solvent to solve all the problems when the photoresist stripping solution is produced. The invention is finally completed.
本發明係再製包含水、光阻、胺化合物、有機溶劑之光阻剝離廢液者，其特徵在於包含：(a)於光阻剝離廢液中添加與胺化合物反應，使胺化合物形成於蒸餾有機溶劑時不會被蒸餾之胺－酸化合物之酸之階段；及(b)分餾前述(a)階段之反應物，僅取得有機溶劑之階段。The invention reproduces a photoresist stripping waste liquid comprising water, a photoresist, an amine compound and an organic solvent, characterized in that: (a) adding a reaction with an amine compound in the photoresist stripping waste liquid to form an amine compound in the distillation The stage of the acid of the amine-acid compound which is not distilled in the organic solvent; and (b) the stage in which the reactant of the above stage (a) is fractionated, and only the organic solvent is obtained.
前述光阻剝離廢液，依照使用剝離液之各種步驟，可包含各種有機胺化合物或各種有機溶劑。前述有機胺化合物可為一級、二級或三級胺，可為脂肪族胺、脂環族胺、芳香族胺、異環狀胺、羥基胺。又，前述有機溶劑可包含二醇類之乙二醇單甲醚、乙二醇單乙醚、乙二醇單丁醚、乙二醇單苯醚、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、二丙二醇單甲醚、二丙二醇單乙醚、二丙二醇單丙醚或二丙二醇單丁醚，可包含二甲基亞碸、二甲基乙醯胺、二甲基甲醯胺、二甲基咪唑啉酮、環丁碸或N－甲基吡咯酮等烷基吡咯酮。The photoresist stripping waste liquid may contain various organic amine compounds or various organic solvents in accordance with various steps of using the stripper. The aforementioned organic amine compound may be a primary, secondary or tertiary amine, and may be an aliphatic amine, an alicyclic amine, an aromatic amine, an isocyclic amine or a hydroxylamine. Further, the organic solvent may include glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol monophenyl ether, diethylene glycol monomethyl ether, diethylene glycol. Monoethyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monopropyl ether or dipropylene glycol monobutyl ether, may contain dimethyl hydrazine, dimethyl acetamide, two Alkylpyrrolidone such as methylformamide, dimethylimidazolidinone, cyclobutylhydrazine or N-methylpyrrolidone.
本發明之光阻剝離廢液再製方法中之於前述(a)階段所使用之酸，只要是與剝離廢液中之胺化合物反應，會使剝離廢液之胺化合物形成於蒸餾有機溶劑時不會被蒸餾之胺－酸化合物之酸即可，並無特別限定，可單獨或混合使用苯甲酸、檸檬酸、甲酸、馬來酸、蘋果酸、水楊酸、酒石酸、乙酸、草酸、磷酸、硝酸、鹽酸、硫酸及過氯酸等。使用量係至少添加與剝離廢液中所含之胺化合物之當量相同當量以上之酸，以未有殘留之胺化合物之方式添加過量的酸為佳。更佳為，使用於分餾有機溶劑時酸與胺之反應物及殘存之酸不會混合之酸。In the method for reprocessing the photoresist stripping waste liquid of the present invention, the acid used in the above (a) stage is not reacted with the amine compound in the stripping waste liquid, so that the amine compound of the stripping waste liquid is formed in the distilled organic solvent. The acid of the amine-acid compound to be distilled may be, and is not particularly limited, and benzoic acid, citric acid, formic acid, maleic acid, malic acid, salicylic acid, tartaric acid, acetic acid, oxalic acid, phosphoric acid, or the like may be used singly or in combination. Nitric acid, hydrochloric acid, sulfuric acid and perchloric acid. The amount of use is at least an acid equivalent to the same equivalent weight as the amine compound contained in the stripping waste liquid, and it is preferred to add an excess amount of the acid in such a manner that no residual amine compound is present. More preferably, it is used in the fractionation of an organic solvent when the acid and amine reactants and the remaining acid do not mix.
藉由前述(a)階段，被處理光阻剝離廢液之成分包含光阻、水分、胺與酸之反應物、殘存之酸及有機溶劑。In the above stage (a), the components of the photoresist stripping waste liquid to be treated include photoresist, moisture, a reactant of an amine and an acid, a residual acid, and an organic solvent.
本發明之光阻剝離廢液再製方法包含階段(b)，係分餾前述(a)階段之反應物，僅收集有機溶劑。於本階段可藉由分餾分餾水分與酸、及有機溶劑，僅收集有機溶劑，將未蒸餾之光阻與酸與胺之反應物另外分離。The method for reprocessing a photoresist stripping waste liquid of the present invention comprises the stage (b) of fractionating the reactants of the above stage (a), and collecting only the organic solvent. At this stage, only the organic solvent can be collected by fractional distillation of water and acid, and an organic solvent, and the undistilled photoresist and the reactant of the acid and the amine are separately separated.
前述分別收集之有機溶劑可藉由冷凝器再度液體化，可於前述有機溶劑中添加特別需求之胺化合物，再度利用作為剝離液。The organic solvent collected separately can be re-liquefied by a condenser, and a particularly desired amine compound can be added to the organic solvent to be reused as a stripping solution.
本發明之剝離廢液再製方法，可無關於胺化合物之種類，再製高價之有機溶劑，作為光阻剝離液再利用，藉此進一步減少因光阻剝離廢液所造成之環境污染，且藉由再利用高價之有機溶劑，可進一步減少費用。The method for re-disposing the stripping waste liquid of the present invention can be reused as a photoresist stripping solution without using a high-priced organic solvent, thereby further reducing environmental pollution caused by the photoresist stripping waste liquid, and by Reuse of high-priced organic solvents can further reduce costs.
以下，作為本發明之具體之一實施形態，說明再製由包含使用乙酸作為酸成分之於各種光阻剝離步驟中產生之MEA(單乙醇胺)、MIPA(單異丙醇胺)、n－MEA(正甲基乙醇胺)之胺化合物、包含二醇及烷基吡咯酮之有機溶劑、水分及光阻構成之剝離廢液之方法。Hereinafter, as a specific embodiment of the present invention, it is described that MEA (monoethanolamine), MIPA (monoisopropanolamine), and n-MEA (produced by various photoresist stripping steps using acetic acid as an acid component are described). A method of extracting a waste liquid composed of an amine compound of n-methylethanolamine, an organic solvent containing a diol and a alkylpyrrolidone, and a moisture and a photoresist.
於由包含MEA、MIPA、n－MEA之胺化合物、包含二醇及烷基吡咯酮之有機溶劑、水分及光阻構成之剝離廢液中添加較前述胺化合物之總當量過量之乙酸。添加乙酸時，乙酸與胺化合物反應，生成胺－乙酸反應物，未參與反應之乙酸以液體狀態殘留於剝離廢液中。然後，光阻、胺－乙酸反應物、水分、未參與反應之殘存乙酸、有機溶劑之混合物，藉由分餾，水分最先被蒸餾，其次為乙酸被蒸餾，然後，有機溶劑之二醇及烷基吡咯酮被蒸餾而與不被蒸餾殘留之光阻及胺－乙酸反應物分離，藉此可僅收集目標之有機溶劑。之後，於收集之有機溶劑中選擇性地添加特別要求之胺化合物之MEA、MIPA或n－MEA等，可作為剝離液再利用。An acetic acid is added in excess of the total equivalent amount of the above amine compound to the stripping waste liquid comprising an amine compound comprising MEA, MIPA, n-MEA, an organic solvent comprising a diol and an alkylpyrrolidone, water and a photoresist. When acetic acid is added, acetic acid reacts with the amine compound to form an amine-acetic acid reactant, and acetic acid which does not participate in the reaction remains in the liquid waste state in the stripping waste liquid. Then, the photoresist, the amine-acetic acid reactant, the water, the residual acetic acid and the organic solvent which are not involved in the reaction, are fractionally distilled, the water is first distilled, the acetic acid is distilled, and then the diol and the alkane of the organic solvent are distilled. The pyrrolidone is distilled to be separated from the photoresist and the amine-acetic acid reactant which are not left by distillation, whereby only the target organic solvent can be collected. Thereafter, MEA, MIPA, or n-MEA or the like which selectively adds a particularly desired amine compound to the collected organic solvent can be reused as a peeling solution.
又，以下，作為本發明之具體之一實施形態，說明再製由包含使用草酸作為酸成分之於各種光阻剝離步驟中產生之MEA、MIPA、n－MEA之胺化合物、包含二醇及烷基吡咯酮之有機溶劑、水分及光阻構成之剝離廢液之方法。前述草酸因為於常溫下作為二水合物存在，故使用草酸二水合物(C2 H2 O4 H2 O)。Further, hereinafter, as an embodiment of the present invention, an amine compound comprising a MEA, MIPA, or n-MEA produced in various photoresist stripping steps using oxalic acid as an acid component, and a diol and an alkyl group will be described. A method of separating a waste liquid composed of an organic solvent, a moisture, and a photoresist of pyrrolidone. Since the oxalic acid is present as a dihydrate at normal temperature, oxalic acid dihydrate (C 2 H 2 O 4 H 2 O) is used.
於由包含MEA、MIPA、n－MEA之胺化合物、包含二醇及烷基吡咯酮之有機溶劑、水分及光阻構成之剝離廢液中添加較前述胺化合物之總當量過量之草酸二水合物。添加草酸二水合物時，草酸二水合物與胺化合物反應，生成胺－草酸反應物，未參與反應之草酸二水合物殘留於剝離廢液中。然後，光阻、胺－草酸反應物、水分、未參與反應之殘存草酸二水合物、有機溶劑之混合物，藉由分餾，水分及草酸二水合物所分解之甲醯酸、二氧化碳、一氧化碳最先被蒸餾，其次有機溶劑之二醇及烷基吡咯酮被蒸餾而與殘留之光阻及胺－草酸反應物及不被分解之草酸二水合物分離，藉此可僅收集目標之有機溶劑。之後，於收集之有機溶劑中選擇性地添加特別要求之胺化合物之MEA、MIPA或n－MEA等，可作為剝離液再利用。Adding oxalic acid dihydrate to the total amount of excess of the above amine compound in a stripping waste liquid comprising an amine compound comprising MEA, MIPA, n-MEA, an organic solvent comprising a diol and a alkylpyrrolidone, moisture and a photoresist . When oxalic acid dihydrate is added, the oxalic acid dihydrate reacts with the amine compound to form an amine-oxalic acid reactant, and the oxalic acid dihydrate which is not involved in the reaction remains in the stripping waste liquid. Then, the photoresist, the amine-oxalic acid reactant, the water, the residual oxalic acid dihydrate, and the organic solvent which are not involved in the reaction are firstly fractionated by water, and the isocyanic acid, carbon dioxide and carbon monoxide which are decomposed by the water and the oxalic acid dihydrate are the first. Distilled, and the diol of the organic solvent and the alkylpyrrolidone are distilled to separate from the residual photoresist and the amine-oxalic acid reactant and the oxalic acid dihydrate which is not decomposed, whereby only the target organic solvent can be collected. Thereafter, MEA, MIPA, or n-MEA or the like which selectively adds a particularly desired amine compound to the collected organic solvent can be reused as a peeling solution.
又，本發明係提供一種光阻剝離廢液再製裝置，其特徵在於包含：(a)包含水、光阻、胺化合物、有機溶劑之被處理光阻剝離廢液貯藏槽；(b)酸貯藏槽；(c)於自前述被處理光阻剝離廢液貯藏槽移送來之剝離廢液中添加自前述酸貯藏槽移送來之酸，使剝離廢液之胺化合物與酸反應之反應槽；(d)分餾自前述反應槽移送來之剝離廢液之蒸餾槽；及(e)收集於前述蒸餾槽分餾之有機溶劑並貯藏之有機溶劑貯藏槽。Moreover, the present invention provides a photoresist stripping waste liquid reconstituting apparatus, comprising: (a) a treated photoresist stripping waste liquid storage tank containing water, a photoresist, an amine compound, and an organic solvent; (b) an acid storage a tank (c) a reaction tank obtained by adding an acid transferred from the acid storage tank to the stripping waste liquid transferred from the treated photoresist stripping waste storage tank to react the amine compound of the stripping waste liquid with an acid; d) a distillation tank for fractionating the stripping waste liquid transferred from the reaction tank; and (e) an organic solvent storage tank which is collected and stored in the above-mentioned distillation tank.
以下，透過本發明之光阻剝離廢液再製裝置之一實施形態之第1圖所示模式圖，具體說明本發明。於各光阻剝離步驟中回收之被處理光阻剝離液貯藏於被處理光阻剝離廢液貯藏槽10。前述被處理光阻剝離廢液包含光阻、MEA、MIPA、n－MEA等之各種胺化合物、水分及有機溶劑。貯藏於前述被處理光阻剝離廢液貯藏槽10之被處理光阻剝離廢液經由泵11沿著配管被移送至反應槽30。為了於移送前述剝離廢液時調節剝離廢液之量，可於配管之特定部分具有自動調節閥12。又，另外具有酸貯藏槽20，其係貯藏用以與光阻剝離廢液中所含之胺化合物反應之酸。前述酸以乙酸或草酸二水合物為佳。酸自前述酸貯藏槽20經由泵21沿著配管被移送至反應槽30。為了於移送前述酸時調節酸之量，可於配管之特定部分具有自動調節閥22。所移送之酸之量宜相較於剝離廢液中所包含之胺化合物之總當量至少相同或過量。自被處理光阻剝離廢液貯藏槽10移送之剝離廢液與自酸貯藏槽20移送之酸於反應槽30反應，形成胺－酸反應物(一例為胺－乙酸反應物或胺－草酸反應物)，未參與反應之酸直接存在於剝離廢液中，此時，於剝離廢液中包含光阻、酸－鹼反應物、水分、未參與反應之酸、有機溶媒。前述反應完成之剝離廢液自反應槽30經由泵31沿著配管移送至蒸餾槽40。為了於移送前述剝離廢液時調節剝離廢液之量，可於配管之特定部分具有自動調節閥32。於蒸餾槽40藉由溫度上升，剝離廢液中所含之成分被分餾、收集。較好的是，前述蒸餾槽40可分別設置用以收集水分之一次蒸餾槽43、用以收集酸之二次蒸餾槽44、用以收集有機溶劑之三次蒸餾槽45、殘留成分排出槽46。使用乙酸作為酸時，剝離廢液內所含之水分經由一次蒸餾槽43被收集，未參與反應之乙酸經由二次蒸餾槽44被收集，有機溶劑經由三次蒸餾槽45被收集，光阻及胺－乙酸之反應物不被蒸餾，可排出至殘留成分排出槽46。較佳的是，前述蒸餾槽40可另外具有減壓裝置47，此時可以降低蒸餾溫度。經由前述三次蒸餾槽45收集之有機溶劑移送至有機溶劑貯藏槽50。前述有機溶劑貯藏槽50具有冷凝器53，可使收集之有機溶劑成為液體狀態。於前述有機溶劑貯藏槽50宜連結有可添加特定之胺化合物之胺化合物槽60，可藉由添加特定之胺化合物，僅添加適於個別光阻剝離步驟之胺化合物，製造再製剝離液。Hereinafter, the present invention will be specifically described by way of a schematic diagram shown in Fig. 1 which is one embodiment of the photoresist stripping waste liquid reconstituting apparatus of the present invention. The treated photoresist stripping liquid recovered in each photoresist stripping step is stored in the treated photoresist stripping waste liquid storage tank 10. The treated photoresist stripping waste liquid contains various amine compounds such as photoresist, MEA, MIPA, n-MEA, water, and an organic solvent. The treated photoresist stripping waste liquid stored in the treated photoresist stripping waste liquid storage tank 10 is transferred to the reaction tank 30 along the pipe via the pump 11. In order to adjust the amount of the peeling waste liquid when transferring the aforementioned stripping waste liquid, the automatic regulating valve 12 may be provided in a specific portion of the piping. Further, there is additionally provided an acid storage tank 20 for storing an acid for reacting with an amine compound contained in the photoresist stripping waste liquid. The aforementioned acid is preferably acetic acid or oxalic acid dihydrate. The acid is transferred from the acid storage tank 20 to the reaction tank 30 along the pipe via the pump 21. In order to adjust the amount of acid when transferring the aforementioned acid, an automatic regulating valve 22 may be provided in a specific portion of the pipe. The amount of acid transferred is preferably at least the same or an excess of the total equivalent weight of the amine compound contained in the stripping waste liquid. The stripping waste liquid transferred from the treated photoresist stripping waste liquid storage tank 10 and the acid transferred from the acid storage tank 20 react in the reaction tank 30 to form an amine-acid reactant (an example is an amine-acetic acid reactant or an amine-oxalic acid reaction). The acid that does not participate in the reaction is directly present in the stripping waste liquid. At this time, the stripping waste liquid contains a photoresist, an acid-base reactant, water, an acid that does not participate in the reaction, and an organic solvent. The stripping waste liquid in which the above reaction is completed is transferred from the reaction tank 30 to the distillation tank 40 along the piping via the pump 31. In order to adjust the amount of the peeling waste liquid when the peeling waste liquid is transferred, the automatic regulating valve 32 may be provided in a specific portion of the piping. The components contained in the stripping waste liquid are fractionated and collected by the temperature rise in the distillation tank 40. Preferably, the distillation tank 40 is provided with a primary distillation tank 43 for collecting moisture, a secondary distillation tank 44 for collecting acid, a tertiary distillation tank 45 for collecting organic solvent, and a residual component discharge tank 46. When acetic acid is used as the acid, the water contained in the stripping waste liquid is collected through the primary distillation tank 43, the acetic acid not participating in the reaction is collected through the secondary distillation tank 44, and the organic solvent is collected through the tertiary distillation tank 45, the photoresist and the amine. The reactant of acetic acid is not distilled and can be discharged to the residual component discharge tank 46. Preferably, the distillation tank 40 may additionally have a pressure reducing device 47, at which time the distillation temperature may be lowered. The organic solvent collected through the aforementioned tertiary distillation tank 45 is transferred to the organic solvent storage tank 50. The organic solvent storage tank 50 has a condenser 53, and the collected organic solvent can be made into a liquid state. Preferably, the organic solvent storage tank 50 is provided with an amine compound tank 60 to which a specific amine compound can be added, and by adding a specific amine compound, only the amine compound suitable for the individual photoresist stripping step can be added to produce a re-formed stripping liquid.
以下，為理解本發明，說明較佳實施例，但以下實施例只不過是本發明之一例，本發明之範圍不限定於下述實施例。Hereinafter, the preferred embodiments are described for understanding the present invention, but the following examples are merely examples of the present invention, and the scope of the present invention is not limited to the following examples.
於包含於各種光阻剝離步驟中回收之光阻3重量份、胺化合物MEA5重量份、MIPA5重量份、n－MEA5重量份、水分10重量份、有機溶劑72重量份(二醇50重量份及烷基吡咯酮22重量份)之剝離廢液中，添加乙酸10重量份，形成胺－乙酸化合物。分餾形成有前述胺－乙酸化合物之剝離廢液，依序地收集水分及殘留乙酸與有機溶劑，分離排出殘留之光阻及胺－乙酸。將前述收集之有機溶劑冷卻，加以液體化，分析經液體化之有機溶劑之成分，結果有機溶劑100重量份中之二醇為61.4重量份，烷基吡咯酮為38.6重量份，水分為未滿0.1重量份，總胺化合物為未滿0.1重量份，樹脂則未檢測出。3 parts by weight of the photoresist contained in the various photoresist stripping steps, 5 parts by weight of the amine compound MEA, 5 parts by weight of MIPA, 5 parts by weight of n-MEA, 10 parts by weight of water, and 72 parts by weight of an organic solvent (50 parts by weight of the diol) To the stripping waste liquid of 22 parts by weight of alkylpyrrolidone, 10 parts by weight of acetic acid was added to form an amine-acetic acid compound. The stripping waste liquid of the aforementioned amine-acetic acid compound is fractionally formed, and water and residual acetic acid and an organic solvent are sequentially collected, and the residual photoresist and amine-acetic acid are separated and discharged. The organic solvent collected as described above was cooled and liquefied to analyze the components of the liquefied organic solvent, and as a result, the diol in 100 parts by weight of the organic solvent was 61.4 parts by weight, and the alkylpyrrolidone was 38.6 parts by weight. 0.1 part by weight, the total amine compound was less than 0.1 part by weight, and the resin was not detected.
於包含於各種光阻剝離步驟中回收之光阻3重量份、胺化合物MEA4重量份、MIPA4重量份、n－MEA4重量份、水分20重量份、有機溶劑65重量份(二醇45重量份及烷基吡咯酮20重量份)之剝離廢液中，添加乙酸8重量份，形成胺－乙酸化合物。分餾形成有前述胺－乙酸化合物之剝離廢液，依序地收集水分及殘留乙酸與有機溶劑，分離排出殘留之光阻及胺－乙酸。將前述收集之有機溶劑冷卻，加以液體化，分析經液體化之有機溶劑之成分，結果有機溶劑100重量份中之二醇為61.8重量份，烷基吡咯酮為38.2重量份，水分為未滿0.1重量份，總胺化合物為未滿0.1重量份，樹脂則未檢測出。3 parts by weight of the photoresist contained in the various photoresist stripping steps, 4 parts by weight of the amine compound MEA, 4 parts by weight of MIPA, 4 parts by weight of n-MEA, 20 parts by weight of water, and 65 parts by weight of an organic solvent (45 parts by weight of the diol) To the stripping waste liquid of 20 parts by weight of alkylpyrrolidone, 8 parts by weight of acetic acid was added to form an amine-acetic acid compound. The stripping waste liquid of the aforementioned amine-acetic acid compound is fractionally formed, and water and residual acetic acid and an organic solvent are sequentially collected, and the residual photoresist and amine-acetic acid are separated and discharged. The organic solvent collected as described above was cooled and liquefied to analyze the components of the liquefied organic solvent. As a result, the diol in 100 parts by weight of the organic solvent was 61.8 parts by weight, and the alkylpyrrolidone was 38.2 parts by weight. 0.1 part by weight, the total amine compound was less than 0.1 part by weight, and the resin was not detected.
於包含於各種光阻剝離步驟中回收之光阻2重量份、胺化合物MEA2重量份、MIPA2重量份、n－MEA2重量份、水分40重量份、有機溶劑52重量份(二醇36重量份及烷基吡咯酮16重量份)之剝離廢液中，添加乙酸4重量份，形成胺－乙酸化合物。分餾形成有前述胺－乙酸化合物之剝離廢液，依序地收集水分及殘留乙酸與有機溶劑，分離排出殘留之光阻及胺－乙酸。將前述收集之有機溶劑冷卻，加以液體化，分析經液體化之有機溶劑之成分，結果有機溶劑100重量份中之二醇為58.9重量份，烷基吡咯酮為41.1重量份，水分為未滿0.1重量份，總胺化合物為未滿0.1重量份，樹脂則未檢測出。2 parts by weight of the photoresist contained in the various photoresist stripping steps, 2 parts by weight of the amine compound MEA, 2 parts by weight of MIPA, 2 parts by weight of n-MEA, 40 parts by weight of water, 52 parts by weight of the organic solvent (36 parts by weight of the diol) To the stripping waste liquid of 16 parts by weight of alkylpyrrolidone, 4 parts by weight of acetic acid was added to form an amine-acetic acid compound. The stripping waste liquid of the aforementioned amine-acetic acid compound is fractionally formed, and water and residual acetic acid and an organic solvent are sequentially collected, and the residual photoresist and amine-acetic acid are separated and discharged. The collected organic solvent was cooled, liquefied, and analyzed for the components of the liquefied organic solvent. As a result, the diol of the organic solvent was 58.9 parts by weight, the alkylpyrrolidone was 41.1 parts by weight, and the moisture was less than 0.1 part by weight, the total amine compound was less than 0.1 part by weight, and the resin was not detected.
於包含於各種光阻剝離步驟中回收之光阻3重量份、胺化合物MEA5重量份、MIPA5重量份、n－MEA5重量份、水分10重量份、有機溶劑72重量份(二醇50重量份及烷基吡咯酮22重量份)之剝離廢液中，添加草酸二水合物10.6重量份，形成胺－草酸化合物。未參與反應之草酸二水合物作為固體成分殘留於剝離廢液中。分餾形成有前述胺－草酸化合物之剝離廢液，收集水分及甲醯酸、二氧化碳、一氧化碳等草酸分解物質及有機溶劑，分離排出殘留之光阻及胺－草酸與未分解之草酸二水合物。將前述收集之有機溶劑冷卻，加以液體化，分析經液體化之有機溶劑之成分，結果有機溶劑100重量份中之二醇為62.2重量份，烷基吡咯酮為37.8重量份，水分為未滿0.1重量份，總胺化合物為未滿0.1重量份，樹脂則未檢測出。3 parts by weight of the photoresist contained in the various photoresist stripping steps, 5 parts by weight of the amine compound MEA, 5 parts by weight of MIPA, 5 parts by weight of n-MEA, 10 parts by weight of water, and 72 parts by weight of an organic solvent (50 parts by weight of the diol) To the stripping waste liquid of 22 parts by weight of alkylpyrrolidone, 10.6 parts by weight of oxalic acid dihydrate was added to form an amine-oxalic acid compound. The oxalic acid dihydrate which is not involved in the reaction remains as a solid component in the stripping waste liquid. The stripping waste liquid of the amine-oxalic acid compound is formed by fractional distillation, and oxalic acid decomposing substances such as formazanic acid, carbon dioxide, and carbon monoxide, and an organic solvent are collected, and the residual photoresist and the amine-oxalic acid and the undecomposed oxalic acid dihydrate are separated and discharged. The collected organic solvent was cooled, liquefied, and analyzed for the components of the liquefied organic solvent. As a result, the diol of the organic solvent was 62.2 parts by weight, the alkylpyrrolidone was 37.8 parts by weight, and the moisture was not satisfied. 0.1 part by weight, the total amine compound was less than 0.1 part by weight, and the resin was not detected.
於包含於各種光阻剝離步驟中回收之光阻3重量份、胺化合物MEA4重量份、MIPA4重量份、n－MEA4重量份、水分20重量份、有機溶劑65重量份(二醇45重量份及烷基吡咯酮20重量份)之剝離廢液中，添加草酸二水合物8.5重量份，形成胺－草酸化合物。未參與反應之草酸二水合物作為固體成分殘留於剝離廢液中。分餾形成有前述胺－草酸化合物之剝離廢液，收集水分及甲醯酸、二氧化碳、一氧化碳等草酸分解物質及有機溶劑，分離排出殘留之光阻及胺－草酸與未分解之草酸二水合物。將前述收集之有機溶劑冷卻，加以液體化，分析經液體化之有機溶劑之成分，結果有機溶劑100重量份中之二醇為58.3重量份，烷基吡咯酮為41.7重量份，水分為未滿0.1重量份，總胺化合物為未滿0.1重量份，樹脂則未檢測出。3 parts by weight of the photoresist contained in the various photoresist stripping steps, 4 parts by weight of the amine compound MEA, 4 parts by weight of MIPA, 4 parts by weight of n-MEA, 20 parts by weight of water, and 65 parts by weight of an organic solvent (45 parts by weight of the diol) 8.5 parts by weight of oxalic acid dihydrate was added to the stripping waste liquid of 20 parts by weight of alkylpyrrolidone to form an amine-oxalic acid compound. The oxalic acid dihydrate which is not involved in the reaction remains as a solid component in the stripping waste liquid. The stripping waste liquid of the amine-oxalic acid compound is formed by fractional distillation, and oxalic acid decomposing substances such as formazanic acid, carbon dioxide, and carbon monoxide, and an organic solvent are collected, and the residual photoresist and the amine-oxalic acid and the undecomposed oxalic acid dihydrate are separated and discharged. The collected organic solvent was cooled, liquefied, and analyzed for the components of the liquefied organic solvent. As a result, the diol of the organic solvent was 58.3 parts by weight, the alkylpyrrolidone was 41.7 parts by weight, and the moisture was less than 0.1 part by weight, the total amine compound was less than 0.1 part by weight, and the resin was not detected.
於包含於各種光阻剝離步驟中回收之光阻2重量份、胺化合物MEA2重量份、MIPA2重量份、n－MEA2重量份、水分40重量份、有機溶劑52重量份(二醇36重量份及烷基吡咯酮16重量份)之剝離廢液中，添加草酸二水合物4.3重量份，形成胺－草酸化合物。未參與反應之草酸二水合物作為固體成分殘留於剝離廢液中。分餾形成有前述胺－草酸化合物之剝離廢液，收集水分及甲醯酸、二氧化碳、一氧化碳等草酸分解物質及有機溶劑，分離排出殘留之光阻及胺－草酸與未分解之草酸二水合物。將前述收集之有機溶劑冷卻，加以液體化，分析經液體化之有機溶劑之成分，結果有機溶劑100重量份中之二醇為62.8重量份，烷基吡咯酮為37.2重量份，水分為未滿0.1重量份，總胺化合物為未滿0.1重量份，樹脂則未檢測出。2 parts by weight of the photoresist contained in the various photoresist stripping steps, 2 parts by weight of the amine compound MEA, 2 parts by weight of MIPA, 2 parts by weight of n-MEA, 40 parts by weight of water, 52 parts by weight of the organic solvent (36 parts by weight of the diol) To the stripping waste liquid of 16 parts by weight of alkylpyrrolidone, 4.3 parts by weight of oxalic acid dihydrate was added to form an amine-oxalic acid compound. The oxalic acid dihydrate which is not involved in the reaction remains as a solid component in the stripping waste liquid. The stripping waste liquid of the amine-oxalic acid compound is formed by fractional distillation, and oxalic acid decomposing substances such as formazanic acid, carbon dioxide, and carbon monoxide, and an organic solvent are collected, and the residual photoresist and the amine-oxalic acid and the undecomposed oxalic acid dihydrate are separated and discharged. The collected organic solvent was cooled, liquefied, and the components of the liquefied organic solvent were analyzed. As a result, the diol of the organic solvent was 62.8 parts by weight, the alkylpyrrolidone was 37.2 parts by weight, and the moisture was less than 0.1 part by weight, the total amine compound was less than 0.1 part by weight, and the resin was not detected.
10．．．被處理光阻剝離廢液貯藏槽10. . . Treated photoresist stripping waste storage tank
11．．．泵11. . . Pump
12．．．自動調節閥12. . . Automatic regulating valve
20．．．酸貯藏槽20. . . Acid storage tank
21．．．泵twenty one. . . Pump
22．．．自動調節閥twenty two. . . Automatic regulating valve
30．．．反應槽30. . . Reaction tank
31．．．泵31. . . Pump
32．．．自動調節閥32. . . Automatic regulating valve
40．．．蒸餾槽40. . . Distillation tank
43．．．一次蒸餾槽43. . . One distillation tank
44．．．二次蒸餾槽44. . . Secondary distillation tank
45．．．三次蒸餾槽45. . . Triple distillation tank
46．．．殘留成分排出槽46. . . Residual component discharge tank
47．．．減壓裝置47. . . Pressure reducing device
50．．．有機溶劑貯藏槽50. . . Organic solvent storage tank
53．．．冷凝器53. . . Condenser
60．．．胺化合物槽60. . . Amine compound tank
第1圖係本發明之一實施形態之光阻剝離廢液再製裝置之模式圖。Fig. 1 is a schematic view showing a photoresist stripping waste liquid remanufacturing apparatus according to an embodiment of the present invention.
10．．．被處理光阻剝離廢液貯藏槽10. . . Treated photoresist stripping waste storage tank
11．．．泵11. . . Pump
12．．．自動調節閥12. . . Automatic regulating valve
20．．．酸貯藏槽20. . . Acid storage tank
21．．．泵twenty one. . . Pump
22．．．自動調節閥twenty two. . . Automatic regulating valve
30．．．反應槽30. . . Reaction tank
31．．．泵31. . . Pump
32．．．自動調節閥32. . . Automatic regulating valve
40．．．蒸餾槽40. . . Distillation tank
43．．．一次蒸餾槽43. . . One distillation tank
44．．．二次蒸餾槽44. . . Secondary distillation tank
45．．．三次蒸餾槽45. . . Triple distillation tank
46．．．殘留成分排出槽46. . . Residual component discharge tank
47．．．減壓裝置47. . . Pressure reducing device
50．．．有機溶劑貯藏槽50. . . Organic solvent storage tank
53．．．冷凝器53. . . Condenser
60．．．胺化合物槽60. . . Amine compound tank
Claims (5)
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| KR (1) | KR101266883B1 (en) |
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| KR101266897B1 (en) * | 2006-03-03 | 2013-05-23 | 주식회사 동진쎄미켐 | A recycling method for resist stripper scrapped and a recycling device for same |
| KR101007418B1 (en) * | 2008-05-28 | 2011-01-12 | 순천향대학교 산학협력단 | Method for recovering amine from amine-containing waste water |
| JP6045283B2 (en) * | 2012-10-11 | 2016-12-14 | 日本リファイン株式会社 | Method and apparatus for regenerating resist stripping solution |
| CN104707549B (en) * | 2015-03-19 | 2016-09-14 | 张汉文 | A kind of device and method reclaiming chromatographic grade organic reagent from organic reagent waste liquid |
| CN111018219A (en) * | 2019-12-23 | 2020-04-17 | 上海天汉环境资源有限公司 | Regeneration treatment process and device for waste stripping liquid |
| CN116003228A (en) * | 2022-12-26 | 2023-04-25 | 南京长江江宇环保科技股份有限公司 | Method for comprehensively utilizing photoresist-removing waste liquid |
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| JP2003057852A (en) * | 2001-08-21 | 2003-02-28 | Asahi Kasei Corp | Method and system for treatment of stripped piece of resist |
| TW200300744A (en) * | 2001-11-29 | 2003-06-16 | Nagase & Co Ltd | Device and method for recovering waste photoresist solution |
| JP2004066085A (en) * | 2002-08-05 | 2004-03-04 | Kimura Chem Plants Co Ltd | Solvent recovery system |
| JP2005288329A (en) * | 2004-03-31 | 2005-10-20 | Nippon Refine Kk | Solvent recovery apparatus and solvent recovery method |
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| US6106722A (en) * | 1997-08-12 | 2000-08-22 | Kinetico Incorporated | Filtering photoresist-containing liquid |
| CN1276307C (en) * | 1998-08-11 | 2006-09-20 | 东进化成工业株式会社 | Stripping agent, stripping method, thereof, stripping agent circulator and stripping agent controller |
| JP3409005B2 (en) | 1999-01-29 | 2003-05-19 | 松下環境空調エンジニアリング株式会社 | Method and apparatus for regenerating stripper |
| JP2002131932A (en) | 2000-10-24 | 2002-05-09 | Kimura Chem Plants Co Ltd | Method for regenerating and recovering resist removing liquid, and device for regenerating and recovering the same |
| KR100390567B1 (en) * | 2000-12-30 | 2003-07-07 | 주식회사 동진쎄미켐 | method of controlling photoresist stripping process and method of regenerating photoresist stripping composition using near infrared spectrometer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2003057852A (en) * | 2001-08-21 | 2003-02-28 | Asahi Kasei Corp | Method and system for treatment of stripped piece of resist |
| TW200300744A (en) * | 2001-11-29 | 2003-06-16 | Nagase & Co Ltd | Device and method for recovering waste photoresist solution |
| JP2004066085A (en) * | 2002-08-05 | 2004-03-04 | Kimura Chem Plants Co Ltd | Solvent recovery system |
| JP2005288329A (en) * | 2004-03-31 | 2005-10-20 | Nippon Refine Kk | Solvent recovery apparatus and solvent recovery method |
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| JP4874835B2 (en) | 2012-02-15 |
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| KR20070090602A (en) | 2007-09-06 |
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