CN101140428A - Photoresist stripper composition - Google Patents
Photoresist stripper composition Download PDFInfo
- Publication number
- CN101140428A CN101140428A CNA2007101453066A CN200710145306A CN101140428A CN 101140428 A CN101140428 A CN 101140428A CN A2007101453066 A CNA2007101453066 A CN A2007101453066A CN 200710145306 A CN200710145306 A CN 200710145306A CN 101140428 A CN101140428 A CN 101140428A
- Authority
- CN
- China
- Prior art keywords
- photoresist
- compound
- light carving
- stripper composition
- rubber stripper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 101
- 239000000203 mixture Substances 0.000 title claims abstract description 78
- -1 urethane compound Chemical class 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 52
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 51
- 238000000354 decomposition reaction Methods 0.000 claims description 23
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical group O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 22
- 239000000126 substance Substances 0.000 claims description 22
- 238000000206 photolithography Methods 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 claims description 15
- 150000004657 carbamic acid derivatives Chemical class 0.000 claims description 14
- 238000012986 modification Methods 0.000 claims description 12
- 230000004048 modification Effects 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 125000000217 alkyl group Chemical group 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910000077 silane Inorganic materials 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical group CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 claims description 6
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims description 6
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 claims description 6
- 208000034189 Sclerosis Diseases 0.000 claims description 6
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 6
- 239000004202 carbamide Substances 0.000 claims description 6
- GAEKPEKOJKCEMS-UHFFFAOYSA-N gamma-valerolactone Chemical compound CC1CCC(=O)O1 GAEKPEKOJKCEMS-UHFFFAOYSA-N 0.000 claims description 6
- 230000014509 gene expression Effects 0.000 claims description 6
- GTCAXTIRRLKXRU-UHFFFAOYSA-N methyl carbamate Chemical group COC(N)=O GTCAXTIRRLKXRU-UHFFFAOYSA-N 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- RZTOWFMDBDPERY-UHFFFAOYSA-N Delta-Hexanolactone Chemical compound CC1CCCC(=O)O1 RZTOWFMDBDPERY-UHFFFAOYSA-N 0.000 claims description 3
- QGLBZNZGBLRJGS-UHFFFAOYSA-N Dihydro-3-methyl-2(3H)-furanone Chemical compound CC1CCOC1=O QGLBZNZGBLRJGS-UHFFFAOYSA-N 0.000 claims description 3
- SIFBVNDLLGPEKT-UHFFFAOYSA-N alpha'-angelica lactone Chemical compound C=C1CCC(=O)O1 SIFBVNDLLGPEKT-UHFFFAOYSA-N 0.000 claims description 3
- OALYTRUKMRCXNH-UHFFFAOYSA-N 5-pentyloxolan-2-one Chemical compound CCCCCC1CCC(=O)O1 OALYTRUKMRCXNH-UHFFFAOYSA-N 0.000 claims description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 2
- 125000003545 alkoxy group Chemical group 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- 229930188620 butyrolactone Natural products 0.000 claims description 2
- WBJINCZRORDGAQ-UHFFFAOYSA-N formic acid ethyl ester Natural products CCOC=O WBJINCZRORDGAQ-UHFFFAOYSA-N 0.000 claims description 2
- SURZCVYFPAXNGN-UHFFFAOYSA-N methyl-carbamic acid ethyl ester Chemical compound CCOC(=O)NC SURZCVYFPAXNGN-UHFFFAOYSA-N 0.000 claims description 2
- XBXCNNQPRYLIDE-UHFFFAOYSA-N tert-butylcarbamic acid Chemical compound CC(C)(C)NC(O)=O XBXCNNQPRYLIDE-UHFFFAOYSA-N 0.000 claims description 2
- 150000003673 urethanes Chemical class 0.000 claims description 2
- GSLDEZOOOSBFGP-UHFFFAOYSA-N alpha-methylene gamma-butyrolactone Chemical compound C=C1CCOC1=O GSLDEZOOOSBFGP-UHFFFAOYSA-N 0.000 claims 2
- SKKTUOZKZKCGTB-UHFFFAOYSA-N butyl carbamate Chemical compound CCCCOC(N)=O SKKTUOZKZKCGTB-UHFFFAOYSA-N 0.000 claims 1
- GZXSDYYWLZERLF-UHFFFAOYSA-N ethyl n-ethylcarbamate Chemical compound CCNC(=O)OCC GZXSDYYWLZERLF-UHFFFAOYSA-N 0.000 claims 1
- YNTOKMNHRPSGFU-UHFFFAOYSA-N n-Propyl carbamate Chemical compound CCCOC(N)=O YNTOKMNHRPSGFU-UHFFFAOYSA-N 0.000 claims 1
- 230000007797 corrosion Effects 0.000 abstract description 16
- 238000005260 corrosion Methods 0.000 abstract description 16
- 229910052751 metal Inorganic materials 0.000 abstract description 14
- 239000002184 metal Substances 0.000 abstract description 14
- 230000000694 effects Effects 0.000 abstract description 5
- 239000002904 solvent Substances 0.000 description 45
- 238000012360 testing method Methods 0.000 description 38
- 239000000758 substrate Substances 0.000 description 27
- 238000005516 engineering process Methods 0.000 description 10
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 9
- 150000002596 lactones Chemical class 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000007598 dipping method Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- OUUQCZGPVNCOIJ-UHFFFAOYSA-M Superoxide Chemical compound [O-][O] OUUQCZGPVNCOIJ-UHFFFAOYSA-M 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- KXDHJXZQYSOELW-UHFFFAOYSA-M Carbamate Chemical compound NC([O-])=O KXDHJXZQYSOELW-UHFFFAOYSA-M 0.000 description 3
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 150000001735 carboxylic acids Chemical class 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000011056 performance test Methods 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000014347 soups Nutrition 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- OZJPLYNZGCXSJM-UHFFFAOYSA-N 5-valerolactone Chemical compound O=C1CCCCO1 OZJPLYNZGCXSJM-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical class NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 229940113088 dimethylacetamide Drugs 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- ZXKXJHAOUFHNAS-FVGYRXGTSA-N (S)-fenfluramine hydrochloride Chemical compound [Cl-].CC[NH2+][C@@H](C)CC1=CC=CC(C(F)(F)F)=C1 ZXKXJHAOUFHNAS-FVGYRXGTSA-N 0.000 description 1
- ODCMOZLVFHHLMY-UHFFFAOYSA-N 1-(2-hydroxyethoxy)hexan-2-ol Chemical compound CCCCC(O)COCCO ODCMOZLVFHHLMY-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- XMWFNHQNZIRWCU-UHFFFAOYSA-N 3-acetyloxolan-2-one oxolan-2-one Chemical compound C(C)(=O)C1C(=O)OCC1.C1(CCCO1)=O XMWFNHQNZIRWCU-UHFFFAOYSA-N 0.000 description 1
- JIXPLLHPLIWWOT-UHFFFAOYSA-N 3-methylideneoxolan-2-one Chemical compound C=C1CCOC1=O.C=C1CCOC1=O JIXPLLHPLIWWOT-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- GNQDDRXSPVNKJD-UHFFFAOYSA-N C(C)(C)(C)NC(O)=O.C(N)(OC(C)(C)C)=O Chemical compound C(C)(C)(C)NC(O)=O.C(N)(OC(C)(C)C)=O GNQDDRXSPVNKJD-UHFFFAOYSA-N 0.000 description 1
- RWVRBJFCHYLKAV-UHFFFAOYSA-N C(C)N(C(O)=O)CC.C(C)NC(=O)OCC Chemical compound C(C)N(C(O)=O)CC.C(C)NC(=O)OCC RWVRBJFCHYLKAV-UHFFFAOYSA-N 0.000 description 1
- SHWCKXSJXRADIN-UHFFFAOYSA-N CNC(=O)O.COC(=O)N Chemical group CNC(=O)O.COC(=O)N SHWCKXSJXRADIN-UHFFFAOYSA-N 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical class OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- XFJRVKQTVNCACZ-UHFFFAOYSA-N ac1l9fmv Chemical compound NC.NC XFJRVKQTVNCACZ-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- WQGANPAWGXQWCN-UHFFFAOYSA-N butyl carbamate butylcarbamic acid Chemical compound C(CCC)NC(O)=O.C(N)(OCCCC)=O WQGANPAWGXQWCN-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- FYTRVXSHONWYNE-UHFFFAOYSA-N delta-octanolide Chemical compound CCCC1CCCC(=O)O1 FYTRVXSHONWYNE-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- JBFHTYHTHYHCDJ-UHFFFAOYSA-N gamma-caprolactone Chemical compound CCC1CCC(=O)O1 JBFHTYHTHYHCDJ-UHFFFAOYSA-N 0.000 description 1
- OALYTRUKMRCXNH-QMMMGPOBSA-N gamma-nonanolactone Chemical compound CCCCC[C@H]1CCC(=O)O1 OALYTRUKMRCXNH-QMMMGPOBSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- OCKHUPCREYAULF-UHFFFAOYSA-N n,n-dimethylformamide;n-methylmethanamine Chemical compound CNC.CN(C)C=O OCKHUPCREYAULF-UHFFFAOYSA-N 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000009418 renovation Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 238000013316 zoning Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/52—Carboxylic amides, alkylolamides or imides or their condensation products with alkylene oxides
- C11D1/526—Carboxylic amides (R1-CO-NR2R3), where R1, R2 or R3 are polyalkoxylated
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/046—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2068—Ethers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The present invention relates to a photoresist stripper composition and a photoresist stripping and decomposing method using the same, and more particularly, to a photoresist stripper composition including a urethane compound. Furthermore, the present invention provides a method comprising: a) a cyclic lactone compound, and b) an amide compound, a carbamate compound, or a mixture thereof. The photoresist stripper composition of the invention can selectively decompose and remove the photoresist residue generated in the photoresist process in the ozone process, thereby greatly improving the treatment capacity and having the corrosion protection effect on metal wiring or an oxide film.
Description
Technical field
The present invention relates to a kind of composition that is used for peeling off the employed photoresist of lithoprinting (photo-lithography) technology, relate in particular to a kind of when peeling off the photoresist that is used to form the metal Butut, can reduce the corrosion of metal film to greatest extent, and not only has the excellent effect of peeling off, and when utilizing ozone to utilize operation again, suppress solvent itself owing to the effect of ozone is decomposed, and make photoetching glue residue in the solvent preferably by solvent but not ozone and the light carving rubber stripper composition that decomposes.The invention still further relates to a kind of method of utilizing said composition to peel off and decompose the photoresist in photolithography process.
Background technology
Photoresist (photo-resist) is a requisite material in photolithography process, and photolithography process generally is applied in integrated circuit (integrated circuit, IC), large scale integrated circuit (large scale integration, LSI), (very large scaleintegration VLSI) waits in the manufacturing of semiconductor device and image display devices such as LCD, flat-panel monitor VLSI (very large scale integrated circuit).
Following simple declaration photolithography process.
At first, on predetermined substrate such as semiconductor substrate or glass substrate, form resist film.Described substrate can be before forming resist film without the substrate of any operation, but normally before forming sharp film against corrosion through the pre-treating technology of some operations, and be formed with the substrate of understructure such as metal line.Therefore, above-mentioned photoresist film is formed in inside or top has on the substrate of predetermined understructure usually.Above-mentioned resist film can be formed on whole zone or some subregion above the substrate, but is coated in the whole surface of substrate usually.Then,, peel off the resist film of presumptive area,, but stay other regional resist film with exposure substrate top by follow-up composition operation, thereby by residual resist film protective substrate top.Have severally in the method for whole base plate surface applied resist film, but use spin-coating method usually.
Then, the exposure mask that will be formed with predetermined pattern is close to the photoresist top that is formed at the whole surface of described substrate, perhaps is spaced apart on photoresist top with preset distance.Afterwards, described mask is shone as high-energy actinic rays such as ultraviolet ray, electron beam, X ray, to carry out exposure process comprehensively.Described mask pattern can be divided into two zones, the photic zone and the shading region of the photochemical ray of promptly described high-energy.Therefore, see through the photochemical ray of described high-energy of described mask pattern photic zone, can arrive the resist film of its underpart.Arrive the photochemical ray of high-energy of described resist film, will change the physical property of resist film.After finishing the irradiation of the photochemical ray of described high-energy, described resist film will be divided into zone that does not change physical property and the zone that changes physical property.Whether change by the as above rerum natura of resist film and to come the pattern that formed by zoning,, therefore be commonly called " sub-image (latent) " of mask pattern because it is temporarily formed by mask.
Afterwards, the sub-image on the described resist film is carried out video picture technology, to form photoresist pattern by the mask pattern transfer printing.Then, the photoresist pattern as etching mask, is carried out etching to substrate, thereby at the inner final predetermined pattern that forms of substrate.Afterwards, peel off the photoresist pattern that remains on the substrate with predetermined pattern, just can finish photolithography process.
Wherein, about light carving rubber stripper composition in the past, Korean Patent discloses a kind of manufacture method of substrate organic coating for 2003-0033988 number, and its use contains the treating fluid of ethylene carbonate, carbonic allyl ester or its potpourri.In addition, United States Patent (USP) the 6th, 403 discloses the renovation process of a kind of ethylene carbonate, carbonic allyl ester etc. No. 544.
Said method is employed to be carbonate compound, but when using ethylene carbonate, its fusing point is higher than normal temperature, therefore is difficult to use as peeling off solvent, and when using carbonic allyl ester, and peeling off solvent with other, to compare its stripping performance poor.In addition, described method is by distilling the method that lactone separates with impurity respectively, and this differs greatly with the method for decomposing in real time, and also will reclaim the solvent that contains certain photoresist after use, and need enforcement fractionation process separately, therefore increase the technology expenditure.
In addition, carbonate compound in the past can be decomposed by ozone and generate superoxide or carboxylic acid compound, this accessory substance that generates owing to ozone can cause the corrosion of metal line, and reduces the purity of carbonate itself, thereby reduces the performance as remover.
Summary of the invention
The present invention does in view of the above problems, and its purpose is to provide a kind of light carving rubber stripper composition.It can inducing ozone the washability decomposition reaction, thereby can the photoresist through sclerosis or modification has excellent stripping performance in the technology that photoresist carries out to utilizing, and have less soup fatigue strength, and have excellent capacity of decomposition.
Another object of the present invention is to provide a kind of described light carving rubber stripper composition that utilizes, the method for in photolithography process, peeling off and decomposing photoresist.
It is a kind of with described light carving rubber stripper composition and peel off in photolithography process and the method for decomposing photoresist is applied in method in the display device manufacturing process that a further object of the present invention is to provide.
For achieving the above object, the invention provides a kind of light carving rubber stripper composition that comprises carbamate compounds.
The present invention also provides a kind of light carving rubber stripper composition, and it comprises a) annular lactone compounds, and b) amides compound, carbamate compounds or its potpourri.
In addition, the invention provides a kind of method of in photolithography process, peeling off and decomposing photoresist, it is in photolithography process, comprise the step of utilizing described light carving rubber stripper composition to peel off and decompose photoresist, and the step of described decomposition photoresist comprises the step that adds ozone in light carving rubber stripper composition.
In addition, the present invention also provides a kind of manufacture method of display device, and it comprises the photoresist lift off step, and this step is utilized described light carving rubber stripper composition, peels off in the manufacturing engineering of display device the photoresist through modification or sclerosis.
Described display device can comprise semiconductor element or flat-panel screens element.
Below, describe the present invention in detail.
Feature of the present invention provides a kind of light carving rubber stripper composition.In photolithography process, after forming the photoresist pattern, the remover combination solvent is peeled off the photoresist that remains on the substrate with photoresist successively, and the solvent that will be dissolved with photoresist passes through reactive tank, so that photoresist composition in the solvent and ozone are when reacting, it is stable that described light carving rubber stripper composition can keep, thereby can not decomposed by ozone.
In the past as employed carbonate compound of single solvent or lactone compound, when carrying out decomposition process for a long time to remaining in photoresist in the solvent with ozone, employed solvent can produce isomeride, perhaps can produce various carboxylic acids such as superoxide or formic acid, acetic acid, propionic acid, thereby cause the purity of solvent to reduce.And the reduction of solvent purity can cause the reduction of photoresist lift off performance, and the generation of carboxylic acids and superoxide can cause the damage of metal line.
Therefore, in the present invention, in order to suppress to decompose owing to ozone causes soup, and then the phenomenon of reduction soup purity, the accessory substance that perhaps suppresses to be generated owing to above-mentioned decomposition is the spinoff of materials such as superoxide or carboxylic acids, by using carbamate compounds solvent as single raw material, perhaps in the lactone solvent, be added with the material of amide-type or carbamate kind solvent, suppress described decomposition reaction.
That is, described carbamic acid compounds comprises the nitrogen base and can have alkalescent, therefore when having ozone, can help ozone to generate free radical, thereby help the decomposition reaction of photoresist, therefore can be used as single solvent and uses.And described carbamate compound is more stable compared with carbonate or lactone compound, is difficult for being decomposed by ozone, thereby can suppresses the spinoff that accessory substance causes.
Light carving rubber stripper composition of the present invention can be the single-component composition that comprises carbamate compounds, and can be the carbamate compounds that comprises 100 weight %.
Yet carbamate compounds is compared with the lactone solvent, and its oxidation to the emulsion in the photoresist composition (PAC) is more strong, so the change of solvent intrinsic colour can not improve significantly.Therefore, light carving rubber stripper composition of the present invention is preferably in and further adds described carbamate compounds, amides compound or its potpourri in the lactone solvent.
Wherein, described amides compound itself is exactly a polar solvent, is characterized in ozone is reduced into oxygen rapidly and can generate the free radical that helps decomposition, therefore the decomposition of photoresist is brought harmful effect, can not use separately.
Therefore, this is decomposed under the effect of ozone in order to suppress solvent in the present invention, simultaneously in order to improve the photoresist lift off performance, uses boiling point at the lactone solvent more than 180 ℃.And, use amide-type or carbamic acid compounds for the selectivity decomposition reaction of inducing ozone.
At this moment, light carving rubber stripper composition of the present invention can be the two-component composition that comprises the carbamate compound of the annular lactone compounds of 70-99.9 weight portion and 0.1-30 weight portion.
Light carving rubber stripper composition of the present invention also can be the two-component composition that comprises the amides compound of the annular lactone compounds of 70-99.9 weight portion and 0.1-30 weight portion.
Light carving rubber stripper composition of the present invention can also be three components compositions of amides compound of carbamate compounds, the 0.1-30 weight portion of the annular lactone compounds that comprises the 70-99.8 weight portion, 0.1-30 weight portion.
In the above-mentioned bi-component or three components compositions that comprises annular lactone compounds and amides compound, if the content of annular lactone compounds surpasses 99.9 weight portions, just can't suppress the decomposition reaction of the solvent that causes owing to ozone itself, can generate a large amount of accessory substances thus.If the content of annular lactone compounds is lower than 70 weight portions, because the strong polarity effect of acid amides itself can hinder ozone and generate free radical, can reduce ozone simultaneously and generate oxygen, thus the decomposition efficiency of photoetching glue residue in the reduction solvent rapidly.
And, in the above-mentioned bi-component or three components compositions that comprises annular lactone compounds and carbamate compounds, if the content of annular lactone compounds surpasses 99.9 weight portions, just can't suppress the decomposition reaction of the solvent that causes owing to ozone itself, can generate a large amount of accessory substances thus.If the content of annular lactone compounds is lower than 70 weight portions, will cause the reduction of photoresist lift off performance.
In addition, in above-mentioned three components compositions,, will hinder ozone and generate free radical if the content of amides compound or carbamate compound surpasses 30 weight portions, can reduce ozone simultaneously and generate oxygen, thereby can reduce the decomposition efficiency of photoetching glue residue in the solvent rapidly.If the content of annular lactone compounds is lower than 0.1 weight portion, just can't suppresses the decomposition reaction of the solvent that causes owing to ozone itself, thereby can generate a large amount of unnecessary accessory substances.
Carbamate compound used in the present invention preferably is selected from methyl carbamate (methyl carbamate), urethanes (Ethyl carbamate), carbamic acid propyl ester (Propyl carbamate), butyl carbamate (butyl carbamate), t-butyl carbamate (tert-butyl carbamate), N-ethyl carbamic acid ethyl ester (N-Ethyl Ethyl carbamate), N-methyl carbamic acid ethyl ester (N-Methyl Ethyl carbamate), at least a compound in the N-alcohol amido ethyl formate (N-ethanol Ethyl carbamate).
Described annular lactone compounds preferably is selected from least a compound in the compound of being represented by following Chemical formula 1 and Chemical formula 2.
[Chemical formula 1]
[Chemical formula 2]
In the above-mentioned chemical formula, R and R
1The alkyl acetate base (alkyl acetate group) of representing the alkyl of hydrogen, hydroxyl, C1-C10, the silane alcohol base of C1-C10 (alkanol group) or C1-C10 respectively.
Described lactone compound is to be selected from gamma-butyrolacton (gamma-butyrolactone), γ-methylene-gamma-butyrolacton (gamma-methylene gamma-butyrolactone), Alpha-Methyl-gamma-butyrolacton (alpha-methyl gamma-butyrolactone), alpha-methylene-gamma-butyrolactone (alpha-methylenegamma-butyrolactone), 2-aceto butyrolactone (2-acetyl butyrolactone), γ-Ji Neizhi (γ-hexanolactone), nonyl lactone (γ-Nonanolactone), δ-Xin Neizhi (δ-octanolactone), gamma-valerolactone (γ-valerolactone), δ-Wu Neizhi (δ-valerolactone), δ-caprolactone (at least a compound among the δ-hexanolactone).
Above-mentioned amides compound preferably uses the compound by following chemical formula 3 expressions.
[chemical formula 3]
In the above-mentioned chemical formula, R represents alkyl, silane alcohol base, alkoxy, amine or the hydroxyl of hydrogen, C1-C10; Alkyl or the silane alcohol base of R ' expression hydrogen, C1-C10; R " alkyl or the silane alcohol base of expression hydrogen, C1-C10.
Described amides compound preferably uses at least a in acetamide, formamide, monomethyl amide (mono methylamide), dimethylformamide (dimethyl amide), monomethyl formamide, dimethyl formamide and the urea.
In addition, the described light carving rubber stripper composition of the present invention step that can be applicable to peel off in the photolithography process and decompose photoresist.
Wherein, when the composition that comprises carbamate is used as photoresist lift off liquid, utilize ozone photoresist decomposition and do not peel off and can have too big problem, but oxidation part emulsion (PAC) because it comprises the nitrogen base, thereby might cause the color of solvent itself to thicken, therefore be preferably used in the not high limited technology of color requirement.
In addition, use bi-component of the present invention or three component light carving rubber stripper compositions, when utilizing ozone to remove residual photoresist in the solvent, use ozone generator to supply ozone in real time.And, in order to decompose or to peel off the photoresist that is dissolved in the solvent and be coated on photoresist on the substrate, preferably in solvent, contain the ozone about 50-100ppm, just and at least also need contain the stripping performance that ozone more than the 30ppm can help photoresist.In addition, for making solvent dissolved ozone effectively, need and be equipped with between the basin of solvent at ozone generator contactor is set.The decomposition efficiency of described ozone in solvent is high more, and photoresist lift off efficient is just high more, and temperature is high more and oxyhydroxide that comprised is many more, and its decomposition rate is just fast more.
The present invention does not do special qualification to the as above preparation method of light carving rubber stripper composition, can carry out assembly by conventional method, and its composition is applied to peeling off of in the composition of circuit or display device employed photoresist.The usable range of the present composition is not subjected to the restriction of component type, so long as need carry out all can using on the photolithographic technology.
Therefore, light carving rubber stripper composition of the present invention can be used for peeling off the photoresist that passes through modification or sclerosis in semiconductor or FPD engineering.The photoresist of above-mentioned modification or sclerosis then occurs in and utilizes wet method or dry method, in etching MULTILAYER COMPOSITE substrate or the operation by single metal line and the formed substrate of inorganic material layer.Described display device then comprises as integrated circuit (integrated circuit, IC), large scale integrated circuit (large scale integration, LSI), VLSI (very large scale integrated circuit) (very largescale integration, semiconductor element such as VLSI), perhaps as flat-panel screens elements such as LCD, plasm display panel (Flat panel display, various image display devices such as FPD).
Preferably, the present invention can make display device by the following method.After forming resist film on the predetermined substrate, impose exposure and video picture, form predetermined pattern through etching work procedure afterwards, then peel off the photoresist that remains on the substrate that is formed with predetermined pattern, thereby remove photoresist through above-mentioned technological process modification or sclerosis with light carving rubber stripper composition of the present invention.
Wherein, described predetermined substrate can be the semiconductor substrate that is formed with etched layer, glass substrate, silicon wafer etc., and its type is not particularly limited.In addition, described etched layer can select material conventional in this area to be formed.In addition, described resist film can be by with eurymeric or negative photoresist, utilizes mode such as spin-coating method to be coated on the substrate and forms.
Above, described the preferred embodiments of the present invention, but the scope of protection of present invention is not limited to the foregoing description.Those skilled in the art can carry out various distortion and modification in not exceeding scope claimed in claims, and such modification and change should be included in the scope of protection of present invention.
Embodiment
Below, further describe the present invention by embodiment and comparative example.But following embodiment just is used for illustrating examples more of the present invention, and and is not used in qualification the present invention.In addition, in the following embodiments, if there is not other explanation, when mixing ratio is by weight for percentage.
Embodiment
＜embodiment 1-15 〉
The light carving rubber stripper composition for preparing embodiment 1-15 by composition identical and content with following table 1.
Table 1
| Project | Amides compound | Carbamate compound | Lactone compound | |||
| Kind | Content (wt%) | Kind | Content (wt%) | Kind | Content (wt%) | |
| 1 | AA | 15 | GBL | 85 | ||
| 2 | FA | 5 | ABL | 95 | ||
| 3 | MMAc | 5 | GBL | 95 | ||
| 4 | MMF | 10 | ABL | 90 | ||
| 5 | DMAc | 5 | GBL | 95 | ||
| 6 | Urea | 5 | GBL | 95 | ||
| 7 | MC | 10 | GBL | 90 | ||
| 8 | TBC | 5 | GBL | 95 | ||
| 9 | N-MEC | 5 | GBL | 95 | ||
| 10 | MMF | 10 | GBL | 80 | ||
| DMAc | 10 | |||||
| 11 | MMF | 10 | GBL | 85 | ||
| AA | 5 | |||||
| 12 | MMF | 10 | GBL | 85 | ||
| Urea | 5 | |||||
| 13 | DMAc | 15 | N-MEC | 15 | GBL | 70 |
| 14 | MC | 100 | ||||
| 15 | TBC | 100 |
In the table 1, AA: acetamide, FA: formamide, MMAc: monomethyl amide, MMF: monomethyl formamide, DMAc: dimethyl acetamide, Urea: urea, MC: methyl carbamate, TBC: t-butyl carbamate, N-MEC:N-methyl carbamic acid ethyl ester (N-methyl ethylcarbamate), GBL: gamma-butyrolacton, ABL:2-aceto butyrolactone.
(test example)
For the photoresist lift off performance of understanding each composition, ozone to the decomposability of photoresist and composition to the corrosivity of metal line, carried out following test.
(1) photoresist lift off performance test
Use the composition of the foregoing description 1-15, estimate its stripping performance and corrosion situation the rete of following test piece 1-4.Particularly in order to observe the photoresist lift off performance that changes along with volatilization, under the situation of forced exhaust state and 70 ℃ of continuous maintenances, estimate the stripping performance of described composition, measure the time of complete stripping photoresist afterwards each test piece, and with its outcome record in table 2.
Employed test piece is as follows in the experiment of carrying out in order to understand the photoresist lift off performance.
Test piece 1: at coating DTFR-3650B on glass (company of Dong Jin Shi-Mei Ken Co., Ltd, eurymeric photoresist) afterwards, under 140 ℃ temperature, carry out 10 minutes cure and handle and form the photoresist pattern, thereby prepare test piece 1.Then utilize this test piece 1 to detect the time of embodiment of the invention composition stripping photoresist pattern.At this moment, the size of described test piece 1 is 2cm * 4cm.
Test piece 2: at coating DTFR-3650B on glass (company of Dong Jin Shi-Mei Ken Co., Ltd, eurymeric photoresist) afterwards, under 150 ℃ temperature, carry out 10 minutes cure and handle and form the photoresist pattern, thereby prepare test piece 2.Then utilize this test piece 2 to detect the time that embodiment of the invention composition is peeled off described photoresist pattern.At this moment, the size of described test piece 2 is 2cm * 4cm.
(2) photoresist decomposability test
In order to understand the photoresist decomposability, in DTFR-3650B (company of Dong Jin Shi-Mei Ken Co., Ltd, positive photoresist) in, add PGMEA (propylene glycol monomethylether acetate) as solvent, behind the described solvent of force drying then, remaining material 1 weight portion is forced to be incorporated in the various embodiments described above composition.Utilize ozone generator to generate the above ozone of 20g/hr then,, carried out the reaction more than 6 hours respectively, observe the decomposition situation of photoresist afterwards respectively with after regulating ozone content in the solvent and reaching more than the 100ppm.The working method of ozone generator is broadly divided into electric discharge, photochemical reaction method, electrolytic process etc., has then adopted electric discharge in this test, promptly inserts dielectric at two between with top electrode, and convert oxygen to ozone in discharge space.The sealing container in, ozone then is dissolved in the solvent with the micro-bubble shape, the micro-bubble shape can strengthen and solvent between contact area.
For the decomposition situation of photoresist, observe by the ultraviolet absorbance detection mode.Each test group is detected absorbance under 280nm, 350nm, 550nm wavelength respectively, and represented decomposition situation with respect to standard with number percent.
(3) corrosive nature of metal line is tested
Utilize test piece 3 to estimate in technology when using the present composition, it is to the corrosion situation of metal line, and in table 2 its result of record.Described test piece 3 is prepared by following mode.
Test piece 3: after forming the coating of 200 , 2000 thickness successively by molybdenum and aluminium on the glass substrate, utilize the DTFR-3650B composition, carry out etching by the wet etching mode then.
The size of described test piece 3 is 2cm * 4cm.Each example composition is being remained under 70 ℃ the situation, with test piece 3 dipping 30 minutes in each composition respectively, after cleaning with pure water afterwards, the corrosion situation of observing the bottom rete by SEM.
(4) stripping performance of modification photoresist is tested
In order to understand stripping performance, utilize following test piece 4 to test to the modification photoresist.
Test piece 4: on the surface of 4 inches silicon wafers, evaporation aluminum or aluminum alloy and titanium nitride successively from down to up, thus form the plated film that thickness is respectively 2000 and 200 successively.(company of Dong Jin Shi-Mei Ken Co., Ltd makes, name of product: DPR-i900), and make final thicknesses of layers reach 1.2 μ m to apply conventional eurymeric photoresist by spin-coating method on described silicon wafer afterwards.Secondly, after settling test on the described resist film, expose, and use developing liquid developing and form pattern with mask.
To described test piece 4, under 120 ℃ temperature, carry out 100 seconds hard roasting (Hard bake), thereby form the photoresist pattern.Afterwards in dry etching device (plasma technique company, model: RIE-80), utilize CHF
3Bottom titanium nitride film and aluminium alloy film that gas etch is not covered by the photoresist pattern in described test piece 4.Then, pass through O
2Plasma ashing apparatus is removed most of photoresist and is prepared test piece 4.
Table 2
| Test findings | |||||
| Photoresist resolution ratio (%) | Corrosion situation (dipping 30 minutes-test piece 3) | The stripping performance test findings | |||
| 140 (test pieces 1) | 150 (test pieces 2) | With modification photoresist dipping 30 minutes (test piece 4) | |||
| 1 | 80 | ◎ | 10 seconds | 1 minute 20 seconds | ◎ |
| 2 | 80 | ◎ | 15 seconds | 1 minute 20 seconds | ◎ |
| 3 | 75 | ◎ | 10 seconds | 1 minute | ◎ |
| 4 | 81 | ◎ | 10 seconds | 1 minute | ◎ |
| 5 | 69 | ◎ | 10 seconds | 1 minute | ◎ |
| 6 | 76 | ◎ | 15 seconds | 1 minute 20 seconds | ◎ |
| 7 | 70 | ◎ | 10 seconds | 1 minute | ◎ |
| 8 | 71 | ◎ | 10 seconds | 1 minute | ◎ |
| 9 | 73 | ◎ | 10 seconds | 1 minute | ◎ |
| 10 | 72 | ◎ | 10 seconds | 1 minute | ◎ |
| 11 | 80 | ◎ | 10 seconds | 1 minute | ◎ |
| 12 | 81 | ◎ | 10 seconds | 1 minute | ◎ |
| 13 | 71 | ◎ | 10 seconds | 1 minute | ◎ |
| 14 | 65 | ◎ | 20 seconds | 1 minute 40 seconds | ◎ |
| 15 | 67 | ◎ | 20 seconds | 1 minute 40 seconds | ◎ |
* corrode the evaluation criterion of situation: ◎-nothing corrosion zero-have a pitch corrosion ■-heavy corrosion
* some residue ■ of stripping performance result standard: ◎-remove fully zero-have-can't remove
In the result of above-mentioned table 2, the photoresist resolution ratio is represented is based on the slip of photoresist after photoresist 1 weight portion carries out 3 hours with ozone the processing.It changes according to ozone generating capacity and processing time, therefore when estimating quality, need carry out relatively.
As shown in Table 2, even the application's embodiment is trapped on the metal film for a long time, also can not cause the corrosion of metal line; And to the stripping performance of photoresist, also equally matched with organic class stripper of routine.Therefore, as the application, in the lactone solvent during mixed amide-based solvent, its photoresist lift off excellent performance not only, and can repeatedly decompose photoetching glue residue in the solvent, to carry out Regeneration Treatment, therefore can significantly reduce the cost of technology.
In addition, be not only the lactone solvent, when using the carbamate single solvent, also the phenomenon that the photoresist resolution ratio reduces slightly can appear, but because its stripping performance to photoresist is relatively good, and the corrosion to metal line is fewer, therefore can be widely used in photolithography process.
Comparative example
＜comparative example 1-4 〉
The light carving rubber stripper composition for preparing comparative example 1-2 by composition identical and content with following table 3.Then, utilize the method identical to detect each comparative example stripping performance, the photoresist decomposability of photoresist reached the corrosivity to metal line with previous embodiment.
Table 3
| Project | Aminated compounds | Polar solvent | Ethylene glycol compounds | |||
| Kind | Content (%) | Kind | Content (weight %) | Kind | Content (weight %) | |
| 1 | MEA | 10 | DMAc | 60 | TEG | 30 |
| 2 | MEA | 10 | MC | 60 | BDG | 30 |
| 3 | DMAc | 100 | ||||
| 4 | GBL | 100 | The embodiment of the invention | |||
In the table 3, MEA: monoethanolamine, DMAc: dimethyl acetamide, MC: methyl carbamate, BDG: butyl diethylene glycol, TEG: triethylene glycol.
Table 4
| Test findings | |||||
| Photoresist resolution ratio (%) | Corrosion situation (dipping 30 minutes-test piece 3) | The stripping performance test findings | |||
| 140 (test pieces 1) | 150 (test pieces 2) | With modification photoresist dipping 30 minutes (test piece 4) | |||
| 1 | 40 | ■ | 10 seconds | 30 seconds | |
| 2 | 40 | ■ | 15 seconds | 30 seconds | |
| 3 | 55 | ◎ | 30 seconds | More than 5 minutes | |
| 4 | 75 | ◎ | 2 minutes | More than 5 minutes | |
* corroding the evaluation criterion of situation: ◎-nothing is rotten zero-a pitch corrosion ■-heavy corrosion arranged
* some residue ■ of stripping performance result standard: ◎-remove fully zero-have-can't remove
In the result of above-mentioned table 4, the photoresist resolution ratio is represented is based on the slip of photoresist after photoresist 1 weight portion carries out 3 hours with ozone the processing.It changes according to ozone generating capacity and processing time, therefore when estimating quality, need carry out relatively.
By the result of last table 4 as can be known, when use contains the general light carving rubber stripper composition of aminated compounds, its to the resolution ratio of photoresist with compare during through the embodiment of the invention the decomposition reaction of residual photoresist obviously low, and through more than 36 hours for a long time after the ozone treatment, the aminated compounds overwhelming majority is decomposed by ozone, thereby causes the photoresist lift off performance significantly to descend.And if use aminated compounds separately as light carving rubber stripper composition, not only resolution ratio reduces but also stripping ability also obviously reduces.If use lactone compound separately as light carving rubber stripper, though resolution ratio and corrode all rightly, stripping performance descends, if pass through ozone treatment for a long time, also can generate precipitate.
By above-mentioned comparative example as can be known, Chang Gui light carving rubber stripper composition can not utilize ozone to carry out Regeneration Treatment; And when using aminated compounds separately, also can obviously reduce the generation of ozone free radical as light carving rubber stripper, therefore can't use as light carving rubber stripper composition.
Claims (15)
1. light carving rubber stripper composition is characterized in that:
Comprise carbamate compounds.
2. light carving rubber stripper composition according to claim 1 is characterized in that:
The carbamate compounds that comprises 100 weight %.
3. a light carving rubber stripper composition is characterized in that, comprises:
A) annular lactone compounds, and
B) amides compound, carbamate compounds or its potpourri.
4. light carving rubber stripper composition according to claim 3 is characterized in that, comprises:
70-99.9 the annular lactone compounds of weight portion and the carbamate compound of 0.1-30 weight portion.
5. light carving rubber stripper composition according to claim 3 is characterized in that, comprises:
70-99.9 the annular lactone compounds of weight portion and the amides compound of 0.1-30 weight portion.
6. light carving rubber stripper composition according to claim 3 is characterized in that, comprises:
70-99.8 the carbamate compounds of the annular lactone compounds of weight portion, the amides compound of 0.1-30 weight portion and 0.1-30 weight portion.
7. according to claim 1 or 3 described light carving rubber stripper compositions, it is characterized in that:
Described carbamate compounds is at least a compound that is selected from methyl carbamate, urethanes, carbamic acid propyl ester, butyl carbamate, t-butyl carbamate, N-ethyl carbamic acid ethyl ester, N-methyl carbamic acid ethyl ester, the N-alcohol amido ethyl formate.
8. light carving rubber stripper composition according to claim 3 is characterized in that:
Described lactone compound is selected from the compound of being represented by following Chemical formula 1 or Chemical formula 2,
[Chemical formula 1]
[Chemical formula 2]
In the above-mentioned chemical formula, R and R
1Represent the alkyl of hydrogen, hydroxyl, C1-C10, the silane alcohol base of C1-C10 or the alkyl acetate base of C1-C10 respectively.
9. light carving rubber stripper composition according to claim 3 is characterized in that:
Described lactone compound is at least a compound that is selected from gamma-butyrolacton, γ-methylene-gamma-butyrolacton, Alpha-Methyl-gamma-butyrolacton, alpha-methylene-gamma-butyrolactone, 2-aceto butyrolactone, γ-Ji Neizhi, nonyl lactone, δ-Xin Neizhi, gamma-valerolactone, δ-Wu Neizhi, the δ-caprolactone.
10. light carving rubber stripper composition according to claim 3 is characterized in that:
Described amides compound is the compound by following chemical formula 3 expressions,
[chemical formula 3]
In the above-mentioned chemical formula, R represents alkyl, silane alcohol base, alkoxy, amine or the hydroxyl of hydrogen, C1-C10; R ' expression hydrogen, the alkyl of C1-C10, silane alcohol base; R " alkyl or the silane alcohol base of expression hydrogen, C1-C10.
11. light carving rubber stripper composition according to claim 3 is characterized in that:
Described amides compound is at least a compound that is selected from acetamide, formamide, monomethyl amide, dimethylformamide, monomethyl formamide, dimethyl formamide and the urea.
12. the method peeling off in photolithography process and decompose photoresist is characterized in that:
In photolithography process, comprise and utilizing as photoresist was peeled off and decomposed to claim 1 or 3 described light carving rubber stripper compositions step, and the step of described decomposition photoresist comprises the step of adding ozone in light carving rubber stripper composition.
13. the method for peeling off in photolithography process and decomposing photoresist according to claim 12 is characterized in that:
Described ozone is dissolved in the described light carving rubber stripper composition with the concentration of 50-100ppm.
14. the manufacture method of a display device is characterized in that:
Comprise the photoresist lift off step, this step is utilized as claim 1 or 3 described light carving rubber stripper compositions, peels off in the manufacturing engineering of display device the photoresist through modification or sclerosis.
15. the manufacture method of display device according to claim 14 is characterized in that:
Described display device is semiconductor element or flat-panel screens element.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20060086146 | 2006-09-07 | ||
| KR1020060086146 | 2006-09-07 | ||
| KR1020070086624 | 2007-08-28 |
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| CN101140428A true CN101140428A (en) | 2008-03-12 |
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| CNA2007101453066A Pending CN101140428A (en) | 2006-09-07 | 2007-09-07 | Photoresist stripper composition |
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| KR (1) | KR20080023122A (en) |
| CN (1) | CN101140428A (en) |
| TW (1) | TW200813663A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103257534A (en) * | 2013-05-02 | 2013-08-21 | 上海华力微电子有限公司 | Photoetching rework photoresist removing technology |
| CN103543618A (en) * | 2013-09-27 | 2014-01-29 | 杨桂望 | Resist film remover |
| CN103616805A (en) * | 2013-10-25 | 2014-03-05 | 青岛华仁技术孵化器有限公司 | Cleaning fluid used in semiconductor manufacture process |
| CN109143800A (en) * | 2018-11-02 | 2019-01-04 | 江阴江化微电子材料股份有限公司 | A kind of universal optical photoresist stripper and its application |
-
2007
- 2007-08-28 KR KR1020070086624A patent/KR20080023122A/en not_active Application Discontinuation
- 2007-09-07 CN CNA2007101453066A patent/CN101140428A/en active Pending
- 2007-09-07 TW TW096133539A patent/TW200813663A/en unknown
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103257534A (en) * | 2013-05-02 | 2013-08-21 | 上海华力微电子有限公司 | Photoetching rework photoresist removing technology |
| CN103257534B (en) * | 2013-05-02 | 2015-07-15 | 上海华力微电子有限公司 | Photoetching rework photoresist removing technology |
| CN103543618A (en) * | 2013-09-27 | 2014-01-29 | 杨桂望 | Resist film remover |
| CN103616805A (en) * | 2013-10-25 | 2014-03-05 | 青岛华仁技术孵化器有限公司 | Cleaning fluid used in semiconductor manufacture process |
| CN109143800A (en) * | 2018-11-02 | 2019-01-04 | 江阴江化微电子材料股份有限公司 | A kind of universal optical photoresist stripper and its application |
| CN109143800B (en) * | 2018-11-02 | 2022-01-28 | 江阴江化微电子材料股份有限公司 | Universal photoresist stripping liquid and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20080023122A (en) | 2008-03-12 |
| TW200813663A (en) | 2008-03-16 |
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Application publication date: 20080312 |