TWI416640B - Source driver, method of manufacturing the same, and liquid crystal module - Google Patents

Source driver, method of manufacturing the same, and liquid crystal module Download PDF

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Publication number
TWI416640B
TWI416640B TW097145743A TW97145743A TWI416640B TW I416640 B TWI416640 B TW I416640B TW 097145743 A TW097145743 A TW 097145743A TW 97145743 A TW97145743 A TW 97145743A TW I416640 B TWI416640 B TW I416640B
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wiring
source driver
semiconductor wafer
terminal
liquid crystal
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TW097145743A
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Chinese (zh)
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TW200947570A (en
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Tatsuya Katoh
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Sharp Kk
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Liquid Crystal (AREA)
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Abstract

A source driver of a film package type including a film substrate; a semiconductor chip on a surface of the film substrate, the semiconductor chip having a plurality of terminals, the plurality of terminals including input terminals, output terminals, and third terminals; an input terminal wiring region for receiving first wiring lines which are connected to the input terminals; an output terminal wiring region for receiving second wiring lines which are connected to the output terminals; sprocket portions at opposite ends of the film substrate; and a heat conducting patterns for connecting the third terminals. This makes it possible to provide a source driver, a method for manufacturing the source driver, and a liquid crystal module, each of which can increase a heat dissipation amount.

Description

源極驅動器、源極驅動器之製造方法、及液晶模組 Source driver, source driver manufacturing method, and liquid crystal module

本發明係關於一種膜安裝型之源極驅動器、源極驅動器之製造方法、及包括該源極驅動器之液晶模組。 The present invention relates to a membrane mounted type source driver, a method of fabricating a source driver, and a liquid crystal module including the source driver.

搭載於液晶面板等之液晶驅動器中，廣泛使用有絕緣膜上形成有配線圖案且安裝有半導體晶片之形態的TCP(Tape Carrier Package，捲帶式安裝)或COF(Chip on Film，覆晶薄膜)等安裝(package)。對於液晶驅動器而言，有構成於液晶面板內之像素區域內的電晶體之用以向源極電極供給信號的源極驅動器、及用以向閘極電極供給信號的閘極驅動器。 In a liquid crystal driver such as a liquid crystal panel, a TCP (Tape Carrier Package) or a COF (Chip on Film) in which a wiring pattern is formed on an insulating film and a semiconductor wafer is mounted is widely used. Wait for the package. The liquid crystal driver includes a source driver for supplying a signal to a source electrode of a transistor formed in a pixel region in the liquid crystal panel, and a gate driver for supplying a signal to the gate electrode.

圖7係表示先前之液晶模組500之概略構成的圖。 FIG. 7 is a view showing a schematic configuration of a conventional liquid crystal module 500.

如圖7所示，先前之液晶模組500包括液晶面板501、閘極驅動器502、源極驅動器503及輸入基板504。於液晶面板501中，在四邊中之一邊或者兩邊上設置有複數個源極驅動器503，在相對設置有源極驅動器503之一邊垂直的一邊或者兩邊上，設置有複數個閘極驅動器502。輸入基板504設置於源極驅動器503之與液晶面板501側相對之一側上。 As shown in FIG. 7, the previous liquid crystal module 500 includes a liquid crystal panel 501, a gate driver 502, a source driver 503, and an input substrate 504. In the liquid crystal panel 501, a plurality of source drivers 503 are provided on one or both sides of the four sides, and a plurality of gate drivers 502 are provided on one side or both sides perpendicular to one side of the source driver 503. The input substrate 504 is disposed on one side of the source driver 503 opposite to the liquid crystal panel 501 side.

於上述構成中，驅動信號及電源係自形成於輸入基板504上之配線而供給至閘極驅動器502及源極驅動器503中，藉此液晶面板501得到驅動。即，液晶模組500中，對閘極驅動器502之驅動信號及電源係自輸入基板504並經由 源極驅動器503及液晶面板501來進行供給(例如，參照專利文獻1)。 In the above configuration, the driving signal and the power source are supplied from the wiring formed on the input substrate 504 to the gate driver 502 and the source driver 503, whereby the liquid crystal panel 501 is driven. That is, in the liquid crystal module 500, the driving signal and the power supply to the gate driver 502 are supplied from the input substrate 504 via The source driver 503 and the liquid crystal panel 501 are supplied (for example, refer to Patent Document 1).

圖8表示先前之源極驅動器503之構成。 FIG. 8 shows the configuration of the previous source driver 503.

先前之源極驅動器503具有如下區域，安裝半導體晶片514，該區域劃分為總計四個區域：形成有對半導體晶片514之輸入端子之配線的輸入端子配線區域511，形成有對半導體晶片514之輸出端子之配線的輸出端子配線區域512，以及兩個通過式配線區域513。 The previous source driver 503 has a region in which a semiconductor wafer 514 is mounted, which is divided into a total of four regions: an input terminal wiring region 511 formed with wiring to the input terminal of the semiconductor wafer 514, and an output of the pair of semiconductor wafers 514 is formed. An output terminal wiring region 512 of the wiring of the terminal, and two pass-through wiring regions 513.

又，如圖9所示，源極驅動器503係以兩端具有加工有連續之孔之鏈輪部515的長條帶之形態，實施一系列之製造工序，並於結束後，藉由沖孔將作為源極驅動器503之部分形成單片而製作。鏈輪部515係用於帶之送出/捲繞等之搬送用的部分。長條帶之形態中，使用者所使用之區域僅為源極驅動器503之部分，而殘留著鏈輪部515等之部分則被廢棄。 Further, as shown in Fig. 9, the source driver 503 is formed in a series of manufacturing steps in the form of a long strip having sprocket portions 515 having continuous holes at both ends, and after punching, A portion of the source driver 503 is formed as a single piece. The sprocket portion 515 is used for a portion for conveyance such as feeding/winding of the belt. In the form of the long strip, the area used by the user is only a part of the source driver 503, and the part remaining with the sprocket part 515 or the like is discarded.

如圖10所示，源極驅動器503以輸出端子配線區域512處於液晶面板501側之方式被固著。而且，輸入端子配線區域511之配線連接著半導體晶片514之輸入端子與輸入基板504之配線，輸出端子配線區域512之配線連接著半導體晶片514之輸出端子與液晶面板501之配線。 As shown in FIG. 10, the source driver 503 is fixed such that the output terminal wiring region 512 is on the liquid crystal panel 501 side. Further, the wiring of the input terminal wiring region 511 is connected to the wiring of the input terminal of the semiconductor wafer 514 and the input substrate 504, and the wiring of the output terminal wiring region 512 is connected to the wiring of the output terminal of the semiconductor wafer 514 and the liquid crystal panel 501.

於通過式配線區域513上，形成有用以對閘極驅動器502供給信號及電源之配線。閘極驅動器502係藉由自輸入基板504並通過源極驅動器503之通過式配線區域513所供給(箭頭X)之信號而驅動。即，源極驅動器503之通過式配線 區域513之功能係對閘極驅動器502供給驅動信號及電源。 Wiring for supplying a signal and a power supply to the gate driver 502 is formed in the pass wiring region 513. The gate driver 502 is driven by a signal supplied from the input substrate 504 through the pass wiring region 513 of the source driver 503 (arrow X). That is, the pass wiring of the source driver 503 The function of the region 513 supplies a drive signal and a power source to the gate driver 502.

再者，如圖7所示，無論對一個液晶面板501是否設置有複數個源極驅動器503，使用通過式配線區域513發揮功能者僅係搭載於液晶面板501之兩端的源極驅動器503。其他源極驅動器503之通過式配線區域513並未得到使用。例如，參照圖10，使用的是源極驅動器503a之左端側之通過式配線區域513，而並未使用源極驅動器503a之右端側之通過式配線區域513及源極驅動器503b之通過式配線區域513。 Further, as shown in FIG. 7, regardless of whether or not a plurality of source drivers 503 are provided for one liquid crystal panel 501, only the source driver 503 which is mounted on both ends of the liquid crystal panel 501 by the function of the through wiring region 513 is used. The pass wiring area 513 of the other source driver 503 is not used. For example, referring to Fig. 10, the pass-through wiring region 513 on the left end side of the source driver 503a is used, and the pass-through wiring region 513 on the right end side of the source driver 503a and the pass-through wiring region of the source driver 503b are not used. 513.

又，源極驅動器503中，就由半導體晶片514產生之熱而言，除了來自晶片自身之散熱外，亦有來自形成於輸入端子配線區域511之配線自身之散熱及經由該配線釋放至輸入基板504側，或者來自形成於輸出端子配線區域512之配線自身之散熱及經由該配線釋放至液晶面板501側。 Further, in the source driver 503, heat generated by the semiconductor wafer 514 is radiated from the wiring itself formed on the input terminal wiring region 511 in addition to heat dissipation from the wafer itself, and is discharged to the input substrate via the wiring. The 504 side or the heat dissipation from the wiring itself formed in the output terminal wiring region 512 is released to the liquid crystal panel 501 side via the wiring.

[專利文獻1] [Patent Document 1]

日本專利特開2002-116451號公報(平成14年4月19日公開) Japanese Patent Laid-Open Publication No. 2002-116451 (published on April 19, 2014)

然而，近年來，伴隨TV之高功能化及多輸出化，安裝於源極驅動器503中之半導體晶片514之發熱增大，故半導體晶片514之發熱多於以前之情形而成為問題。由此，業者期望一種經實施進一步散熱對策的源極驅動器。 However, in recent years, with the high functionality and multi-output of TV, the heat generation of the semiconductor wafer 514 mounted in the source driver 503 is increased, so that the heat generation of the semiconductor wafer 514 is more problematic than in the past. Thus, the industry desires a source driver that implements further heat dissipation countermeasures.

本發明係鑒於上述先前之問題點而完成者，其目的在於提供一種可增加散熱量之源極驅動器、源極驅動器之製造 方法、及包括該源極驅動器之液晶模組。 The present invention has been made in view of the above problems, and an object thereof is to provide a source driver and a source driver which can increase heat dissipation. And a liquid crystal module including the source driver.

為了解決上述課題，本發明之源極驅動器係一種膜安裝型之源極驅動器，其係於膜基材之表面上安裝設有複數個可與外部連接之端子的半導體晶片，且於上述膜基材之表面分別形成與上述半導體晶片之端子中之輸入電信號之端子相連接的第1配線及與上述半導體晶片之端子中之輸出電信號之端子相連接的第2配線而成，其特徵在於：於上述膜基材之兩端具有形成連續之孔並在該膜基材之表面形成金屬部而成之鏈輪部，上述第1配線之未與上述半導體晶片之端子相連接之端部朝向未設置有上述鏈輪部之一端側而形成，且上述第2配線之未與上述半導體晶片之端子相連接之端部朝向與形成有上述第1配線之端部之一端側相對之一端側而形成，將上述半導體晶片之端子中未連接於上述第1配線及第2配線的端子與上述鏈輪部之金屬部加以連接的第3配線形成於上述膜基材之表面。 In order to solve the above problems, the source driver of the present invention is a film-mounted type source driver which is mounted on a surface of a film substrate with a plurality of semiconductor wafers which are connectable to external terminals, and is formed on the film substrate. The surface of the material is formed by forming a first wiring connected to a terminal of an input electrical signal in a terminal of the semiconductor wafer and a second wiring connected to a terminal of an output electrical signal in a terminal of the semiconductor wafer. a sprocket portion having a continuous hole formed at both ends of the film substrate and having a metal portion formed on a surface of the film substrate, wherein an end portion of the first wiring not connected to a terminal of the semiconductor wafer is oriented An end side of the sprocket portion is not provided, and an end portion of the second wiring that is not connected to a terminal of the semiconductor wafer faces an end side opposite to an end side of an end portion on which the first wiring is formed. Forming, the third wiring connecting the terminal of the semiconductor wafer that is not connected to the first wiring and the second wiring to the metal portion of the sprocket portion is formed The surface of the substrate.

根據上述構成，於膜基材之表面形成有將半導體晶片之端子中未連接於第1配線及第2配線之端子、與鏈輪部之金屬部加以連接的第3配線，藉此可使半導體晶片上所產生之熱從第3配線自身進行散熱或者經由第3配線而亦釋放至鏈輪部。因此，可增加散熱量。 According to the above configuration, the third wiring that connects the terminals of the semiconductor wafer to the terminals of the first wiring and the second wiring and the metal portion of the sprocket portion is formed on the surface of the film substrate, thereby forming the semiconductor. The heat generated on the wafer is radiated from the third wiring itself or released to the sprocket portion via the third wiring. Therefore, the amount of heat dissipation can be increased.

又，先前，鏈輪部係例如僅用於使齒輪嚙合於連續之孔，將製造步驟中之源極驅動器送出或捲繞者，在對源極驅動器進行沖孔之後便被廢棄。再者，於源極驅動器中，形成有當安裝於液晶面板上時，用以對閘極驅動器供給驅 動信號之配線。 Further, in the past, the sprocket portion was used only for meshing the gears with the continuous holes, and the source driver in the manufacturing step was sent out or wound up, and was discarded after the source driver was punched. Furthermore, in the source driver, when the liquid crystal panel is mounted, it is used to drive the gate driver. Wiring of the signal.

對此，根據上述構成，使鏈輪部之金屬部與第3配線連接，而將鏈輪部用作釋放熱之部分。即，無需切去鏈輪部而使其保留原樣。此時，可無需形成先前所形成之配線，而使鏈輪部形成於無配線之部分內側。藉此，可減小源極驅動器之寬度，並亦可謀求材料之成本降低。或者，亦可不使鏈輪部形成於無配線之部分內側，而亦可使第1配線及第2配線成為粗間距。 On the other hand, according to the above configuration, the metal portion of the sprocket portion is connected to the third wiring, and the sprocket portion is used as a portion for releasing heat. That is, it is not necessary to cut the sprocket portion to leave it as it is. At this time, it is not necessary to form the wiring formed previously, and the sprocket portion can be formed inside the portion where no wiring is formed. Thereby, the width of the source driver can be reduced, and the cost of the material can also be reduced. Alternatively, the sprocket portion may not be formed inside the portion where no wiring is provided, and the first wiring and the second wiring may be formed to have a coarse pitch.

本發明之源極驅動器較好的是，上述鏈輪部係由層積於上述膜基材之表面且包含銅或不銹鋼之散熱體所形成。藉此，除了來自第3配線自身之散熱外，經由第3配線傳導而來的熱可高效地自鏈輪部中釋放，因此可增大散熱量。 In the source driver of the present invention, it is preferable that the sprocket portion is formed of a heat sink including copper or stainless steel laminated on the surface of the film substrate. Thereby, in addition to the heat radiation from the third wiring itself, the heat conducted through the third wiring can be efficiently released from the sprocket portion, so that the amount of heat radiation can be increased.

本發明之源極驅動器較好的是，上述第3配線係遍及由上述第1配線中兩端的第1配線與上述第2配線中兩端的第2配線所夾持之區域之整個面上，以與上述兩端之第1配線及兩端之第2配線電性絕緣的方式所形成。藉此，半導體晶片上所產生之熱之散熱面積及熱傳導面積增大，因此可增大散熱量。又，本發明之源極驅動器較理想的是，上述鏈輪部之金屬部與上述第3配線為一體形成。 In the source driver of the present invention, the third wiring is preferably spread over the entire surface of the region sandwiched between the first wiring at both ends of the first wiring and the second wiring at both ends of the second wiring. It is formed to be electrically insulated from the first wiring at both ends and the second wiring at both ends. Thereby, the heat dissipation area and the heat conduction area of the heat generated on the semiconductor wafer are increased, so that the amount of heat dissipation can be increased. Further, in the source driver of the present invention, preferably, the metal portion of the sprocket portion is formed integrally with the third wiring.

本發明之源極驅動器較好的是，上述第1配線中兩端之第1配線之連接於上述半導體晶片端子之部分的形成方向與上述第2配線中兩端之第2配線之連接於上述半導體晶片端子之部分的形成方向，為大致垂直。 In the source driver of the present invention, it is preferable that a direction in which a first wiring of the both ends of the first wiring is connected to the terminal of the semiconductor wafer and a second wiring of both ends of the second wiring are connected to the source The direction in which portions of the semiconductor wafer terminals are formed is substantially vertical.

根據上述構成，使由兩端之第1配線與兩端之第2配線所 夾持之區域變寬，因此藉由散熱圖案之形成，而可使半導體晶片上所產生之熱之釋放口變寬。因此，可使之高效地進行散熱。 According to the above configuration, the first wiring and the second wiring ends at both ends are provided. Since the area of the nip is widened, the heat release opening on the semiconductor wafer can be widened by the formation of the heat dissipation pattern. Therefore, it is possible to efficiently dissipate heat.

本發明之源極驅動器較好的是包括安裝於上述半導體晶片上側之表面且具有懸掛引線之金屬板，且上述懸掛引線與上述第3配線連接。藉此，亦可使熱從半導體晶片之上側之表面高效地釋放。因此，可增大散熱量。 Preferably, the source driver of the present invention includes a metal plate having a suspension lead attached to a surface of the upper surface of the semiconductor wafer, and the suspension lead is connected to the third wiring. Thereby, heat can be efficiently released from the surface of the upper side of the semiconductor wafer. Therefore, the amount of heat dissipation can be increased.

本發明之源極驅動器較好的是，於以上述鏈輪部位於寬度方向之兩端之長條帶狀的形態製作後，沿寬度方向切斷而各自分離。藉此，由於源極驅動器係僅於寬度方向上被切斷而各自分離，故而單片化之模具成為廉價。 Preferably, the source driver of the present invention is formed in a strip shape in which both ends of the sprocket portion are located in the width direction, and then cut and separated in the width direction. As a result, since the source drivers are separated only in the width direction and separated, the singulated mold is inexpensive.

本發明之源極驅動器之製造方法，其係膜安裝型源極驅動器之製造方法，該膜安裝型源極驅動器係於膜基材之表面安裝設置有複數個可與外部連接之端子的半導體晶片，且於上述膜基材之表面分別形成與上述半導體晶片之端子中之輸入電信號之端子相連接之第1配線及與上述半導體晶片之端子中之輸出電信號之端子相連接之第2配線而成，其製造方法之特徵在於包含：第1步驟，其係於長條帶狀之膜基材之表面同時連續地形成上述第1配線、上述第2配線、金屬部及第3配線，上述第1配線係未與上述半導體晶片之端子相連接的端部朝向一方之長度方向者，上述第2配線係未與上述半導體晶片之端子相連接的端部朝向另一方之長度方向者，上述金屬部係位於該表面之兩端者，上述第3配線係將上述半導體晶片之端子中未連接於 上述第1配線及第2配線的端子與上述金屬部加以連接者；第2步驟，其係以連接於上述第1配線及第2配線之方式將上述半導體晶片連續地安裝；及第3步驟，其係於寬度方向上切斷上述膜基材，使上述源極驅動器各自分離。 A method of manufacturing a source driver of the present invention, which is a method of manufacturing a film-mounting type source driver for mounting a semiconductor wafer having a plurality of externally connectable terminals on a surface of a film substrate And forming, on the surface of the film substrate, a first wiring connected to a terminal of an input electrical signal in a terminal of the semiconductor wafer, and a second wiring connected to a terminal of an output electrical signal in a terminal of the semiconductor wafer The manufacturing method of the present invention includes the first step of continuously forming the first wiring, the second wiring, the metal portion, and the third wiring on the surface of the strip-shaped film substrate. The end portion of the first wiring that is not connected to the terminal of the semiconductor wafer faces one longitudinal direction, and the end portion of the second wiring that is not connected to the terminal of the semiconductor wafer faces the other longitudinal direction, the metal The portion is located at both ends of the surface, and the third wiring system is not connected to the terminal of the semiconductor wafer The terminals of the first wiring and the second wiring are connected to the metal portion, and the second step is to continuously connect the semiconductor wafer so as to be connected to the first wiring and the second wiring; and the third step The film substrate is cut in the width direction to separate the source drivers.

根據上述構成，於膜基材之表面形成連接半導體晶片之端子中未連接於第1配線及第2配線之端子與金屬部的第3配線，藉此可使半導體晶片上所產生之熱從第3配線自身進行散熱或者經由第3配線而亦釋放至鏈輪部。因此，可增加散熱量。 According to the above configuration, the third wiring that is not connected to the terminal of the first wiring and the second wiring and the metal portion among the terminals of the semiconductor wafer is formed on the surface of the film substrate, whereby the heat generated on the semiconductor wafer can be generated from the first 3 The wiring itself is radiated or released to the sprocket portion via the third wiring. Therefore, the amount of heat dissipation can be increased.

又，先前，形成位於膜基材之兩端金屬部的部分，例如被用作鏈輪部。鏈輪部僅用於使齒輪嚙合於連續之孔，且將製造步驟中之源極驅動器送出或捲繞者，在對源極驅動器進行沖孔之後便被廢棄。再者，於源極驅動器中，形成有安裝於液晶面板上時，用以對閘極驅動器供給驅動信號之配線。 Further, previously, a portion which is located at the metal portions at both ends of the film substrate is used, for example, as a sprocket portion. The sprocket portion is only used to engage the gears in the continuous holes, and the source driver in the manufacturing step is sent out or wound up, and is discarded after punching the source driver. Further, in the source driver, wiring for supplying a driving signal to the gate driver when mounted on the liquid crystal panel is formed.

對此，根據上述構成，因於寬度方向上切斷膜基材而使連續地形成於膜基材上之源極驅動器各自分離，故而金屬部並未切除而保留原樣。而且，使金屬部與第3配線相連接，而用作釋放熱之部分。因此，可不形成先前所形成之配線，而使金屬部形成於無配線之部分內側。藉此，可減小源極驅動器之寬度，並且亦可謀求材料之成本降低。或者，亦可不使金屬部形成於無配線之部分內側，而使第1配線及第2配線形成為粗間距。 On the other hand, according to the above configuration, since the source substrates which are continuously formed on the film substrate are separated by cutting the film substrate in the width direction, the metal portions are not cut off and remain as they are. Further, the metal portion is connected to the third wiring to serve as a portion for releasing heat. Therefore, the metal portion can be formed inside the portion where no wiring is formed without forming the wiring formed previously. Thereby, the width of the source driver can be reduced, and the cost of the material can also be reduced. Alternatively, the first wiring and the second wiring may be formed to have a coarse pitch without forming the metal portion inside the portion where the wiring is not provided.

本發明之源極驅動器之製造方法較好的是，於上述半導 體晶片上，具有懸掛引線之金屬板安裝於一方之表面上，上述第2步驟中，在將上述半導體晶片以安裝有上述金屬板之側為上側之方式安裝之後，將上述懸掛引線連接於上述第3配線。藉此，亦可從半導體晶片之上側之表面高效地釋放熱。因此，可增大散熱量。 The method for fabricating the source driver of the present invention is preferably the above-described semiconductor a metal plate having a suspension lead is mounted on one surface of the body wafer, and in the second step, the semiconductor wafer is mounted on the side on which the metal plate is mounted, and then the suspension lead is connected to the above Third wiring. Thereby, heat can be efficiently released from the surface on the upper side of the semiconductor wafer. Therefore, the amount of heat dissipation can be increased.

本發明之液晶模組之特徵在於，包含：液晶面板；源極驅動器，其係於上述液晶面板之四側邊中一側邊或相對之兩側邊上設置有複數個；閘極驅動器，其係於上述液晶面板之四側邊中之對設置有上述源極驅動器之側邊垂直之側邊上設置有複數個；基板，其係連接於上述源極驅動器；及配線帶，其係配置於設置有上述閘極驅動器之側邊側之設置有上述源極驅動器之側邊之一端，且連接上述液晶面板與上述基板。 The liquid crystal module of the present invention includes: a liquid crystal panel; a source driver disposed on one side or opposite sides of the four sides of the liquid crystal panel; and a gate driver; a plurality of sides of the four sides of the liquid crystal panel disposed on a side opposite to a side where the source driver is disposed; a substrate connected to the source driver; and a wiring tape disposed on the wiring layer One side of the side of the source driver is disposed on the side of the gate driver, and the liquid crystal panel and the substrate are connected.

根據上述構成，可使源極驅動器之半導體晶片上所產生之熱經由第3配線及鏈輪部，而釋放至液晶面板及輸入基板。因此，可實現散熱性優異之液晶模組。 According to the above configuration, the heat generated on the semiconductor wafer of the source driver can be released to the liquid crystal panel and the input substrate via the third wiring and the sprocket portion. Therefore, a liquid crystal module excellent in heat dissipation can be realized.

又，先前係經由形成於源極驅動器上之配線，而將來自基板之驅動信號供給至閘極驅動器，但根據上述構成，可藉由配線帶而將來自基板之驅動信號供給至閘極驅動器。因此，即便源極驅動器上並未形成有用以對閘極驅動器供給驅動信號之配線亦不受影響。又，雖然配線帶之零件數增加，但合併源極驅動器之成本降低部分等，總體可降低成本。 Further, the driving signal from the substrate is supplied to the gate driver via the wiring formed on the source driver. However, according to the above configuration, the driving signal from the substrate can be supplied to the gate driver by the wiring tape. Therefore, even if wiring is not formed on the source driver to supply a driving signal to the gate driver, it is not affected. Further, although the number of parts of the wiring tape is increased, the cost reduction portion of the combined source driver and the like can generally reduce the cost.

如以上，本發明之源極驅動器構成如下，其係將設置有 複數個可與外部連接之端子的半導體晶片安裝於膜基材之表面，且將上述半導體晶片之端子中之與輸入電信號之端子相連接的第1配線及與輸出電信號之端子相連接的第2配線分別形成於上述膜基材之表面而成的膜安裝型者，於上述膜基材之兩端具有連續之孔及在該膜基材之表面形成有金屬部而成之鏈輪部，上述第1配線之未與上述半導體晶片之端子相連接之端部朝向未設置有上述鏈輪部之一端側形成，且，上述第2配線之未與上述半導體晶片之端子相連接之端部朝向與形成有上述第1配線之端部之一端側相對的一端側形成，連接上述半導體晶片之端子中之未連接於上述第1配線及第2配線的端子與上述鏈輪部之金屬部的第3配線形成於上述膜基材之表面。 As described above, the source driver of the present invention is constructed as follows, which will be provided with a plurality of semiconductor wafers connectable to external terminals are mounted on a surface of the film substrate, and a first wiring connected to a terminal for inputting an electrical signal and a terminal for outputting an electrical signal are connected to a terminal of the semiconductor wafer. A film-mounting type in which the second wiring is formed on the surface of the film substrate, and has a continuous hole at both ends of the film substrate and a sprocket portion formed with a metal portion on the surface of the film substrate. An end portion of the first wiring that is not connected to the terminal of the semiconductor wafer is formed toward an end portion on which the sprocket portion is not provided, and an end portion of the second wiring that is not connected to a terminal of the semiconductor wafer Forming one end side facing the end side of the end portion on which the first wiring is formed, and connecting a terminal not connected to the first wiring and the second wiring and a metal portion of the sprocket portion among the terminals of the semiconductor wafer The third wiring is formed on the surface of the film substrate.

因此，於膜基材之表面形成連接半導體晶片之端子中未連接於第1配線及第2配線之端子與鏈輪部之金屬部的第3配線，藉此可使半導體晶片上所產生之熱從第3配線自身散熱或者經由第3配線而亦釋放至金屬部。因此，取得實現可增加散熱量之源極驅動器之效果。 Therefore, the third wiring which is not connected to the terminal of the first wiring and the second wiring and the metal portion of the sprocket portion among the terminals of the semiconductor wafer is formed on the surface of the film substrate, whereby the heat generated on the semiconductor wafer can be generated. The third wiring itself dissipates heat or is discharged to the metal portion via the third wiring. Therefore, the effect of realizing a source driver that can increase the amount of heat dissipation is achieved.

又，使鏈輪部之金屬部與第3配線連接，而將鏈輪部用作釋放熱之部分。即，先前被廢棄之鏈輪部無需切除而保留原樣。此時，可不形成先前所形成之配線，而使鏈輪部形成於無配線之部分內側。藉此，取得如下效果：可減小源極驅動器之寬度，並且亦可謀求材料之成本降低。或者，亦可不使鏈輪部形成於無配線之部分內側，而使第1配線及第2配線形成為粗間距。 Further, the metal portion of the sprocket portion is connected to the third wiring, and the sprocket portion is used as a portion for releasing heat. That is, the previously discarded sprocket portion remains as it is without being cut. At this time, the previously formed wiring may not be formed, and the sprocket portion may be formed inside the portion where no wiring is formed. Thereby, the effect of reducing the width of the source driver and reducing the cost of the material can be obtained. Alternatively, the first wiring and the second wiring may be formed to have a coarse pitch without forming the sprocket portion inside the portion where the wiring is not provided.

又，本發明之源極驅動器之製造方法，其係膜安裝型源極驅動器之製造方法該膜安裝型源極驅動器係於膜基材之表面安裝著設有複數個可與外部連接之端子的半導體晶片，且於上述膜基材之表面分別形成著上述半導體晶片之端子中之與輸入電信號之端子相連接之第1配線及與輸出電信號之端子相連接之第2配線而成，其製造方法包括：第1步驟，其係於長條帶狀之膜基材之表面同時連續地形成上述第1配線、上述第2配線、金屬部及第3配線，上述第1配線中未與上述半導體晶片之端子相連接的端部朝向一方之長度方向，上述第2配線中未與上述半導體晶片之端子相連接的端部朝向另一方之長度方向，上述金屬部位於該表面之兩端，上述第3配線連接上述半導體晶片之端子中未連接於上述第1配線及第2配線的端子與上述金屬部；第2步驟，其係以連接於上述第1配線及第2配線之方式而連續地安裝上述半導體晶片；及第3步驟，其係沿寬度方向切斷上述膜基材，使上述源極驅動器各自分離。 Further, in the method of manufacturing a source driver of the present invention, a method of manufacturing a film-mounting type source driver is to mount a plurality of externally connectable terminals on a surface of a film substrate. a semiconductor wafer having a first wiring connected to a terminal for inputting an electrical signal and a second wiring connected to a terminal for outputting an electrical signal among the terminals of the semiconductor wafer, respectively, on a surface of the film substrate; The manufacturing method includes a first step of continuously forming the first wiring, the second wiring, the metal portion, and the third wiring on the surface of the long strip-shaped film substrate, wherein the first wiring is not the same as the above An end portion of the semiconductor wafer to which the terminals are connected faces a longitudinal direction, and an end portion of the second wiring that is not connected to the terminal of the semiconductor wafer faces the other longitudinal direction, and the metal portion is located at both ends of the surface. The third wiring connects the terminal of the semiconductor wafer to the terminal not connected to the first wiring and the second wiring and the metal portion; and the second step is connected to the first portion The semiconductor wafer is continuously attached to the wire and the second wiring; and the third step is to cut the film substrate in the width direction to separate the source drivers.

因此，於膜基材之表面形成連接半導體晶片之端子中未連接於第1配線及第2配線之端子與金屬部的第3配線，藉此可使半導體晶片上所產生之熱從第3配線自身散熱或者經由第3配線而亦釋放至金屬部。因此，取得實現可增加散熱量之源極驅動器之效果。 Therefore, the third wiring which is not connected to the terminal of the first wiring and the second wiring and the metal portion among the terminals of the semiconductor wafer is formed on the surface of the film substrate, whereby the heat generated on the semiconductor wafer can be generated from the third wiring. The heat is radiated by itself or released to the metal portion via the third wiring. Therefore, the effect of realizing a source driver that can increase the amount of heat dissipation is achieved.

又，因沿寬度方向切斷膜基材而將連續地形成於膜基材上之源極驅動器各自分離，故而例如用作鏈輪部的金屬部並未切除而保留原樣。而且，使金屬部與第3配線相連 接，而用作釋放熱之部分。因此，可不形成先前所形成之配線，而使金屬部形成於無配線之部分內側。藉此，取得可減小源極驅動器之寬度，並且亦可謀求材料之成本降低之效果。或者，亦可不使金屬部形成於無配線之部分內側，而使第1配線及第2配線形成為粗間距。 Moreover, since the source substrate continuously formed on the film base material is separated by cutting the film base material in the width direction, for example, the metal portion used as the sprocket portion is not cut off and remains as it is. Moreover, the metal portion is connected to the third wiring Connected and used as part of releasing heat. Therefore, the metal portion can be formed inside the portion where no wiring is formed without forming the wiring formed previously. Thereby, it is possible to reduce the width of the source driver and to reduce the cost of the material. Alternatively, the first wiring and the second wiring may be formed to have a coarse pitch without forming the metal portion inside the portion where the wiring is not provided.

本發明之液晶模組之構成為包含：液晶面板；源極驅動器，其係於上述液晶面板之四側邊中一側邊或相對之兩側邊上設置有複數個；閘極驅動器，其係於上述液晶面板之四側邊中之對設置有上述源極驅動器之側邊垂直之側邊上設置有複數個；基板，其係連接於上述源極驅動器；及配線帶，其係配置於設置有上述閘極驅動器之側邊側之設置有上述源極驅動器之側邊之一端，且連接上述液晶面板與上述基板。 The liquid crystal module of the present invention comprises: a liquid crystal panel; and a source driver disposed on one side or opposite sides of the four sides of the liquid crystal panel; the gate driver is And a plurality of sides of the four sides of the liquid crystal panel provided with the side edges of the source driver being vertically disposed; a substrate connected to the source driver; and a wiring tape disposed in the set One side of the side of the source driver is provided on the side of the gate driver, and the liquid crystal panel and the substrate are connected.

由此，可使源極驅動器之半導體晶片上所產生之熱經由第3配線及鏈輪部而釋放至液晶面板及輸入基板。因此，取得可實現散熱性優異之液晶模組之效果。 Thereby, the heat generated on the semiconductor wafer of the source driver can be released to the liquid crystal panel and the input substrate via the third wiring and the sprocket portion. Therefore, the effect of a liquid crystal module excellent in heat dissipation can be obtained.

又，先前係經由形成於源極驅動器上之配線而將來自基板之驅動信號供給至閘極驅動器，但根據本發明，可藉由配線帶而將來自基板之驅動信號供給至閘極驅動器。因此，在源極驅動器即便未形成有用以對閘極驅動器供給驅動信號之配線亦不受影響。又，雖然配線帶之零件數增加，但合併源極驅動器之成本降低部分等，總體可謀求成本降低。 Further, the driving signal from the substrate is previously supplied to the gate driver via the wiring formed on the source driver. However, according to the present invention, the driving signal from the substrate can be supplied to the gate driver by the wiring tape. Therefore, even if the source driver does not form a wiring that is useful for supplying a driving signal to the gate driver, it is not affected. Further, although the number of components of the wiring tape is increased, the cost reduction portion of the source driver is combined, and the cost can be reduced as a whole.

[實施形態1] [Embodiment 1] (源極驅動器之構成) (Composition of source driver)

如下所述，根據圖式對本發明之一實施形態進行說明。 An embodiment of the present invention will be described below based on the drawings.

圖1係表示本實施形態之源極驅動器100之一構成例的圖。 Fig. 1 is a view showing an example of the configuration of a source driver 100 of the present embodiment.

本實施形態之源極驅動器100，如圖1所示，於作為底材之膜基材107上，形成有輸入端子配線區域101、輸出端子配線區域102、及兩個熱傳導圖案104(第3配線)，並且安裝有半導體晶片105，且於膜基材107之兩端具有兩個鏈輪部103。即，源極驅動器100係膜安裝型之半導體裝置。 As shown in FIG. 1, the source driver 100 of the present embodiment has an input terminal wiring region 101, an output terminal wiring region 102, and two heat conduction patterns 104 (third wiring) on a film substrate 107 as a substrate. And a semiconductor wafer 105 is mounted, and has two sprocket portions 103 at both ends of the film substrate 107. That is, the source driver 100 is a film-mounted semiconductor device.

輸入端子配線區域101係形成有與半導體晶片105之輸入端子相連接之配線(第1配線)(未圖示)的區域。輸入端子配線區域101於自垂直於半導體晶片105之安裝面的方向進行觀察時，形成為自半導體晶片105之四側面中之一側面朝向未設置有鏈輪部103之端邊(圖中上側)變寬的形狀。 The input terminal wiring region 101 is formed in a region (not shown) in which a wiring (first wiring) (not shown) is connected to an input terminal of the semiconductor wafer 105. The input terminal wiring region 101 is formed from one of the four side faces of the semiconductor wafer 105 toward the end side where the sprocket portion 103 is not provided (upper side in the drawing) when viewed from a direction perpendicular to the mounting surface of the semiconductor wafer 105. Widened shape.

輸出端子配線區域102係形成有與半導體晶片105之輸出端子相連接之配線(第2配線)(未圖示)的區域。輸出端子配線區域102於自垂直於半導體晶片105之安裝面之方向進行觀察時，形成為自半導體晶片105之四側面中之設置有輸入端子配線區域101之部位以外的部位，朝向未設置有鏈輪部103之端邊(圖中下側)變寬的形狀。 The output terminal wiring region 102 is formed with a wiring (second wiring) (not shown) connected to the output terminal of the semiconductor wafer 105. When the output terminal wiring region 102 is viewed from a direction perpendicular to the mounting surface of the semiconductor wafer 105, it is formed as a portion other than the portion where the input terminal wiring region 101 is provided from the four side faces of the semiconductor wafer 105, and the chain is not provided. The end of the wheel portion 103 (the lower side in the drawing) has a widened shape.

鏈輪部103設於源極驅動器100之兩端。鏈輪部103係於源極驅動器100單片化前的長條帶之形態時，用於使齒輪嚙合於連續地設置之孔106，來用以將帶送出或進行捲繞 之搬送的部分。該動作係例如於形成配線之工序、將半導體晶片或其他晶片電容器等加以安裝之組裝工序、及將源極驅動器分離之工序等中進行者。為了確保能夠經受上述動作之強度，鏈輪部103於膜基材107上形成有銅箔(金屬部)。 The sprocket portion 103 is provided at both ends of the source driver 100. The sprocket portion 103 is in the form of a long strip before the source driver 100 is singulated, and is used to engage the gears in the continuously disposed holes 106 for feeding or winding the belt. The part of the transfer. This operation is performed, for example, in a process of forming a wiring, an assembly process of mounting a semiconductor wafer or another wafer capacitor, and the like, and a step of separating the source driver. In order to ensure the strength of the above operation, the sprocket portion 103 is formed with a copper foil (metal portion) on the film substrate 107.

熱傳導圖案104係以將半導體晶片105之突起端子與鏈輪部103之銅箔加以連接之方式而形成的配線。熱傳導圖案104一面使輸入端子配線區域101與輸出端子配線區域102之間與兩區域絕緣一面得以形成。 The heat conduction pattern 104 is a wiring formed by connecting the protruding terminals of the semiconductor wafer 105 and the copper foil of the sprocket portion 103. The heat conduction pattern 104 is formed while insulating the input terminal wiring region 101 and the output terminal wiring region 102 from both regions.

半導體晶片105於安裝面上形成有可與外部連接之複數個突起端子(金屬凸塊)。該突起端子由金等金屬構成，且具有用以輸入輸出信號之輸入端子及輸出端子、及不進行信號之輸入輸出而僅用以釋放熱之物理性端子。上述端子中，輸入端子連接於輸入端子配線區域101之配線，輸出端子連接於輸出端子配線區域102之配線。而且，上述物理性端子連接於熱傳導圖案104。再者，半導體晶片105具有例如720條左右之輸出。 The semiconductor wafer 105 is formed with a plurality of protruding terminals (metal bumps) connectable to the outside on the mounting surface. The bump terminal is made of a metal such as gold, and has an input terminal and an output terminal for inputting and outputting signals, and a physical terminal for releasing heat only without inputting and outputting signals. Among the above terminals, the input terminal is connected to the wiring of the input terminal wiring region 101, and the output terminal is connected to the wiring of the output terminal wiring region 102. Further, the physical terminal is connected to the heat conduction pattern 104. Furthermore, the semiconductor wafer 105 has an output of, for example, about 720.

具有上述構成之源極驅動器100中，由半導體晶片105中產生之熱，除了從晶片自身進行散熱以外，亦可從形成於輸入端子配線區域101之配線自身進行散熱及從該配線中釋放，或者從形成於輸出端子配線區域102之配線自身中進行散熱及從該配線中釋放，並且，進而可從熱傳導圖案104自身中進行散熱，及經由熱傳導圖案104而釋放至鏈輪部103。因此，可增加散熱量。 In the source driver 100 having the above configuration, heat generated in the semiconductor wafer 105 can be radiated from and discharged from the wiring itself formed in the input terminal wiring region 101, in addition to heat dissipation from the wafer itself, or Heat is radiated from and released from the wiring itself formed in the output terminal wiring region 102, and further, heat is radiated from the heat conduction pattern 104 itself, and is released to the sprocket portion 103 via the heat conduction pattern 104. Therefore, the amount of heat dissipation can be increased.

又，先前之源極驅動器503中，鏈輪部515僅用作搬送用，在對源極驅動器503進行沖孔後便被廢棄。而且，為了設置用以向閘極驅動器供給驅動信號之配線，而形成了僅使用配置於液晶面板之兩端側之源極驅動器503之通過式配線區域513。 Further, in the previous source driver 503, the sprocket portion 515 is used only for transport, and is discarded after the source driver 503 is punched. Further, in order to provide wiring for supplying a driving signal to the gate driver, a pass wiring region 513 using only the source driver 503 disposed on both end sides of the liquid crystal panel is formed.

與此相對，本實施形態之源極驅動器100中，使未被切下而保留原樣之鏈輪部103之銅箔與熱傳導圖案104連接並用作釋放熱之部分。而且，並未形成先前之形成於源極驅動器503的通過式配線區域513，而是將用作搬送用之鏈輪部103因未形成通過式配線區域513而形成於內側。藉此，可減小源極驅動器100之寬度，並且亦可相應地實現材料之成本降低。例如，先前之源極驅動器503之寬度為48mm，而本實施形態之源極驅動器100之寬度為35mm。 On the other hand, in the source driver 100 of the present embodiment, the copper foil which has not been cut and left as it is, the sprocket portion 103 is connected to the heat conduction pattern 104 and used as a portion for releasing heat. Further, the pass-through wiring region 513 formed in the source driver 503 is not formed, but the sprocket portion 103 serving as the transport is formed on the inner side without forming the pass-through wiring region 513. Thereby, the width of the source driver 100 can be reduced, and the cost reduction of the material can be achieved accordingly. For example, the width of the previous source driver 503 is 48 mm, and the width of the source driver 100 of the present embodiment is 35 mm.

再者，亦可在未形成通過式配線區域513卻仍然維持著寬度之狀態下，使輸入端子配線區域101及輸出端子配線區域102擴寬，從而使配線形成為粗間距。 In addition, the input terminal wiring region 101 and the output terminal wiring region 102 may be widened while the through wiring region 513 is not formed while maintaining the width, and the wiring may be formed to have a coarse pitch.

又，作為輸入端子配線區域101及輸出端子配線區域102所需之區域，係根據安裝有半導體晶片105之位置、及半導體晶片105之突起端子之布局(凸塊布局)而決定。藉此，於維持著突起端子之數量的狀態下對半導體晶片105之凸塊布局進行整理，藉此可擴大輸入端子配線區域101與輸出端子配線區域102之間的區域，儘可能地確保熱傳導圖案104較大，從而對於散熱性方面而言較為理想。藉此，由於半導體晶片105上所產生之熱之散熱面積及熱傳導面 積增加，故而可增大散熱量。 Further, the area required for the input terminal wiring region 101 and the output terminal wiring region 102 is determined according to the position at which the semiconductor wafer 105 is mounted and the layout (bump layout) of the protruding terminals of the semiconductor wafer 105. Thereby, the bump layout of the semiconductor wafer 105 is arranged while maintaining the number of the bump terminals, whereby the area between the input terminal wiring region 101 and the output terminal wiring region 102 can be enlarged, and the heat conduction pattern can be ensured as much as possible. 104 is larger, which is ideal for heat dissipation. Thereby, the heat dissipation area and the heat conduction surface of the heat generated on the semiconductor wafer 105 The product is increased, so that the amount of heat dissipation can be increased.

圖2表示對半導體晶片105之輸出端子側之凸塊布局進行整理後的源極驅動器110之一構成例。 FIG. 2 shows an example of the configuration of the source driver 110 in which the bump layout on the output terminal side of the semiconductor wafer 105 is arranged.

與圖1所示之源極驅動器100相比，圖2所示之源極驅動器110係以輸出端子配線區域112從半導體晶片105之四側面中之三側面起變寬的方式而形成。詳細而言，輸入端子配線區域101之兩端的配線入射至半導體晶片105的方向(輸入端子配線區域101之兩端的配線連接於半導體晶片105之輸入端子之部分的形成方向)、與輸出端子配線區域112之兩端之配線入射至半導體晶片105的方向(輸出端子配線區域112之兩端之配線連接於半導體晶片105之輸出端子之部分的形成方向)，為大致垂直。 The source driver 110 shown in FIG. 2 is formed such that the output terminal wiring region 112 is wider from three of the four side faces of the semiconductor wafer 105 than the source driver 100 shown in FIG. Specifically, the wirings at both ends of the input terminal wiring region 101 are incident on the semiconductor wafer 105 (the direction in which the wirings at the both ends of the input terminal wiring region 101 are connected to the input terminals of the semiconductor wafer 105), and the output terminal wiring region. The wiring at both ends of 112 is incident on the semiconductor wafer 105 (the direction in which the wiring at both ends of the output terminal wiring region 112 is connected to the output terminal of the semiconductor wafer 105) is substantially vertical.

又，一面使輸入端子配線區域101與輸出端子配線區域112之間與兩區域絕緣，一面使熱傳導圖案114儘可能地形成得較寬。藉此，半導體晶片105上所產生之熱之釋放口變寬，因此容易經由熱傳導圖案114而釋放熱。因此，可高效地進行散熱。再者，亦可一體化地形成熱傳導圖案114與鏈輪部103之銅箔。 Further, while the input terminal wiring region 101 and the output terminal wiring region 112 are insulated from each other, the heat conduction pattern 114 is formed as wide as possible. Thereby, the heat release port generated on the semiconductor wafer 105 is widened, so that heat is easily released via the heat conduction pattern 114. Therefore, heat dissipation can be performed efficiently. Further, the copper foil of the heat conduction pattern 114 and the sprocket portion 103 may be integrally formed.

(源極驅動器之製造方法) (Method of manufacturing source driver)

繼而，對本實施形態之源極驅動器100之製造方法進行說明。 Next, a method of manufacturing the source driver 100 of the present embodiment will be described.

圖3係表示本實施形態之源極驅動器100之製造流程的圖，圖3(a)~(e)表示上述各工序。再者，源極驅動器100係藉由捲帶(Reel To Reel)方式進行製造。 Fig. 3 is a view showing a manufacturing flow of the source driver 100 of the embodiment, and Figs. 3(a) to 3(e) show the above steps. Furthermore, the source driver 100 is manufactured by a Reel To Reel method.

首先，如圖3(a)所示，準備好作為源極驅動器100之底材的長條帶狀之膜基材107。而且，於膜基材107之寬度方向之兩端，形成沿長度方向連續地配置之孔106。再者，膜基材107係由聚醯亞胺等有機樹脂材料構成之絕緣性膜基材。 First, as shown in FIG. 3(a), a long strip-shaped film substrate 107 as a substrate of the source driver 100 is prepared. Further, at both ends in the width direction of the film substrate 107, holes 106 which are continuously arranged in the longitudinal direction are formed. Further, the film substrate 107 is an insulating film substrate made of an organic resin material such as polyimide.

繼而，如圖3(b)所示，形成輸入端子配線區域101之配線、輸出端子配線區域102之配線、鏈輪部103之銅箔、及熱傳導圖案104。詳細而言，於對膜基材107之一方之表面實施鍍銅之後，實施抗蝕劑、曝光、顯影工序，並利用蝕刻而使各部分圖案化。接著，藉由對剩餘之銅上實施鍍錫而形成各部分。藉此，可同時地一次性形成各部分。又，該等形成部分沿長度方向反覆地(連續地)形成於作為源極驅動器100而形成之每一個圖案上。 Then, as shown in FIG. 3(b), the wiring of the input terminal wiring region 101, the wiring of the output terminal wiring region 102, the copper foil of the sprocket portion 103, and the heat conduction pattern 104 are formed. Specifically, after copper plating is performed on one surface of the film substrate 107, a resist, an exposure, and a development process are performed, and each portion is patterned by etching. Next, each portion is formed by tin plating the remaining copper. Thereby, each part can be formed at one time at the same time. Further, the forming portions are formed over the longitudinal direction (continuously) on each of the patterns formed as the source driver 100.

再者，輸入端子配線區域101之配線及輸出端子配線區域102之配線係以如下方式而形成，即，使不與半導體晶片105相連接之側的端部相互位於朝向相反之長度方向上。又，於輸入端子配線區域101之配線、輸出端子配線區域102之配線、及熱傳導圖案104上，利用阻焊劑來包覆由使用者用作接合部分之外部引線及安裝半導體晶片之內部引線以外的部分。 In addition, the wiring of the input terminal wiring region 101 and the wiring of the output terminal wiring region 102 are formed such that the end portions on the side not connected to the semiconductor wafer 105 are located in opposite longitudinal directions. Further, the wiring of the input terminal wiring region 101, the wiring of the output terminal wiring region 102, and the heat conduction pattern 104 are covered with a solder resist to cover the external leads used as the bonding portion by the user and the internal leads of the semiconductor wafer. section.

繼而，如圖3(c)所示，將半導體晶片105連續地安裝於每個圖案上。詳細而言，於膜基材107上，藉由熱與壓力來壓接半導體晶片105之突起端子與經鍍錫之配線，並藉由於金與錫上製成共晶來進行接合。藉此，半導體晶片105 固著於膜基材107上。一般而言，接合該半導體元件之工序被稱作內部引線焊接(ILB：Inner Lead Bonding)。於進行內部引線焊接(ILB)之後，將作為無溶劑類之環氧樹脂的底部填充材料，填充於半導體晶片與帶基材之間隙內，然後，進行固化(cure)而使底部填充樹脂硬化。 Then, as shown in FIG. 3(c), the semiconductor wafer 105 is continuously mounted on each of the patterns. Specifically, on the film substrate 107, the protruding terminals of the semiconductor wafer 105 and the tin-plated wiring are pressure-bonded by heat and pressure, and bonding is performed by forming a eutectic on gold and tin. Thereby, the semiconductor wafer 105 It is fixed to the film substrate 107. In general, the process of bonding the semiconductor element is referred to as Inner Lead Bonding (ILB). After the internal lead bonding (ILB) is performed, an underfill material as a solventless epoxy resin is filled in a gap between the semiconductor wafer and the tape substrate, and then cured to cure the underfill resin.

繼而，如圖3(d)所示，沿著切斷面P，於一條直線上將膜基材107切斷。切斷面P設定於膜基材107之寬度方向上，以不會對連續地形成之源極驅動器造成影響來進行切斷。藉此，如圖3(e)所示，可製作出經單片化之源極驅動器100。源極驅動器100呈大致長方形之形狀。 Then, as shown in FIG. 3(d), the film substrate 107 is cut along a straight line along the cut surface P. The cut surface P is set in the width direction of the film base material 107, and is cut so as not to affect the continuously formed source driver. Thereby, as shown in FIG. 3(e), the singulated source driver 100 can be fabricated. The source driver 100 has a substantially rectangular shape.

先前，如圖9所示，源極驅動器503係藉由模具進行沖孔而單片化，但本實施形態之源極驅動器100，並不是利用模具進行沖孔，而是沿著一條直線切斷使之單片化。藉此，源極驅動器100僅於固定之方向上加以切斷便製作而成，因此可使用廉價之單片化模具。又，源極驅動器100中，先前被廢棄之鏈輪部103保留於製品中，但將鏈輪部103用作散熱部。 Previously, as shown in FIG. 9, the source driver 503 is diced by punching a mold, but the source driver 100 of the present embodiment is not punched by a mold but cut along a straight line. Make it singular. Thereby, the source driver 100 is formed by cutting only in the fixed direction, so that an inexpensive single-piece mold can be used. Further, in the source driver 100, the previously detached sprocket portion 103 remains in the product, but the sprocket portion 103 serves as a heat radiating portion.

又，如上所述，輸入端子配線區域101之配線、輸出端子配線區域102之配線、鏈輪部103之銅箔、及熱傳導圖案104為一次性同時形成，但亦可另外形成鏈輪部103之銅箔。即，於輸入端子配線區域101之配線、輸出端子配線區域102之配線、及熱傳導圖案104之形成前或形成後，藉由於膜基材107之表面積層不銹鋼(SUS)等金屬，而將鏈輪部103製成散熱體。藉此，經由熱傳導圖案104傳導而來之 熱，便從鏈輪部103中高效地進行散熱，因此可增大散熱量。 Further, as described above, the wiring of the input terminal wiring region 101, the wiring of the output terminal wiring region 102, the copper foil of the sprocket portion 103, and the heat conduction pattern 104 are formed at the same time, but the sprocket portion 103 may be separately formed. Copper foil. In other words, the sprocket is formed by the metal such as stainless steel (SUS) on the surface of the film substrate 107 before or after the wiring of the input terminal wiring region 101, the wiring of the output terminal wiring region 102, and the formation of the heat conduction pattern 104. The portion 103 is made into a heat sink. Thereby, it is conducted through the heat conduction pattern 104. When heat is applied, heat is efficiently dissipated from the sprocket portion 103, so that the amount of heat radiation can be increased.

再者，藉此而製作之源極驅動器100可用於TCP、COF、及SOF(System on Film，薄膜系統)中之任一者。 Furthermore, the source driver 100 manufactured thereby can be used for any of TCP, COF, and SOF (System on Film).

又，上述源極驅動器100之製造方法中，如圖3(a)至圖3(b)所示，於膜基材107上加工孔106之後，使輸入端子配線區域101之配線、輸出端子配線區域102之配線、鏈輪部103之銅箔、及熱傳導圖案104形成圖案，但並不限於此。即，亦可輸入端子配線區域101之配線、輸出端子配線區域102之配線、鏈輪部103之銅箔、及熱傳導圖案104形成圖案之後，對孔106進行加工。 Further, in the method of manufacturing the source driver 100, as shown in FIGS. 3(a) to 3(b), after the hole 106 is formed in the film substrate 107, the wiring of the input terminal wiring region 101 and the output terminal wiring are made. The wiring of the region 102, the copper foil of the sprocket portion 103, and the heat conduction pattern 104 are patterned, but are not limited thereto. In other words, the wiring of the terminal wiring region 101, the wiring of the output terminal wiring region 102, the copper foil of the sprocket portion 103, and the heat conduction pattern 104 may be input, and the hole 106 may be processed.

[實施形態2] [Embodiment 2]

如下所示，根據圖式對本發明之其他實施形態進行說明。再者，本實施形態中所說明之情形以外之構成，與上述實施形態1相同。又，為了方便說明，對具有與上述實施形態1之圖式中所示的構件功能相同之構件，附上相同符號，並省略其說明。 Other embodiments of the present invention will be described below with reference to the drawings. Further, the configuration other than the case described in the present embodiment is the same as that of the first embodiment. It is to be noted that the same reference numerals are given to members having the same functions as those of the members of the above-described first embodiment, and the description thereof will be omitted.

圖4係表示本實施形態之源極驅動器200之一構成例的側面剖面圖。 Fig. 4 is a side cross-sectional view showing a configuration example of one of the source drivers 200 of the embodiment.

本實施形態之源極驅動器200除了上述實施形態1之源極驅動器100之構成以外，亦如圖4所示，包括藉由接著材料203而貼附於半導體晶片105之上側之表面且具有懸掛引線202之散熱體201。 The source driver 200 of the present embodiment includes, in addition to the configuration of the source driver 100 of the first embodiment, as shown in FIG. 4, and is attached to the upper surface of the semiconductor wafer 105 by the bonding material 203 and has a suspension lead. The heat sink 201 of 202.

散熱體201係板狀之金屬板(熱擴散片)，可根據價格及 熱傳導性而從各種金屬中加以確定。散熱體201之尺寸可根據半導體晶片105之尺寸而自由地選擇，散熱體201之高度(厚度)可根據半導體晶片105之厚度、整體高度之限制、散熱效率之適當化來加以確定。 The heat sink 201 is a plate-shaped metal plate (heat diffusion sheet), which can be based on price and Thermal conductivity is determined from various metals. The size of the heat sink 201 can be freely selected according to the size of the semiconductor wafer 105. The height (thickness) of the heat sink 201 can be determined according to the thickness of the semiconductor wafer 105, the overall height limit, and the heat dissipation efficiency.

又，散熱體201中，懸掛引線202為至少兩條並形成為自側面懸垂。懸掛引線202藉由熱傳導圖案104與焊錫204而連接。又，懸掛引線202由金屬構成，亦可藉由與散熱體201一體成型而形成。再者，作為具有懸掛引線202之散熱體201，亦可使用先前之鑄模安裝中所使用之引線框。藉此，可提供廉價之製品。 Further, in the heat sink 201, at least two of the suspension leads 202 are formed to hang from the side. The suspension lead 202 is connected to the solder 204 by the heat conduction pattern 104. Further, the suspension lead 202 is made of metal, and may be formed by being integrally molded with the heat sink 201. Further, as the heat sink 201 having the suspension lead 202, a lead frame used in the previous mold mounting can also be used. Thereby, an inexpensive product can be provided.

先前，從半導體晶片105自身向大氣中釋放之散熱量，會因乾燥大氣之熱傳導率非常低而使得量不充分。對此，源極驅動器200中安裝有散熱體201，藉此形成有供半導體晶片105上所產生之熱從散熱體201釋放至大氣中之路徑。進而，藉由懸掛引線202將散熱體201與熱傳導圖案104加以連接，藉此形成有供半導體晶片105上所產生之熱從散熱體201並經由懸掛引線202及熱傳導圖案104而釋放至鏈輪部103之路徑。 Previously, the amount of heat released from the semiconductor wafer 105 itself to the atmosphere was insufficient due to the very low thermal conductivity of the dry atmosphere. In this regard, the heat sink 201 is mounted in the source driver 200, whereby a path for releasing heat generated on the semiconductor wafer 105 from the heat sink 201 to the atmosphere is formed. Further, the heat sink 201 and the heat conduction pattern 104 are connected by the suspension lead 202, whereby heat generated on the semiconductor wafer 105 is formed from the heat sink 201 and released to the sprocket portion via the suspension lead 202 and the heat conduction pattern 104. Path 103.

藉此，亦可使由半導體晶片105之電性動作而產生之發熱從半導體晶片105之露出面(與形成於半導體晶片105之安裝面上之突起端子相反側之表面)高效地進行散熱，從而可增大散熱量。 Thereby, heat generated by the electrical operation of the semiconductor wafer 105 can be efficiently dissipated from the exposed surface of the semiconductor wafer 105 (the surface opposite to the protruding terminal formed on the mounting surface of the semiconductor wafer 105). Can increase heat dissipation.

又，半導體晶片105亦可經由接著材料203而預先安裝於散熱體201上。而且，將附散熱體201之半導體晶片105內 部引線焊接(ILB)於膜基材107上。藉此，可消除製造過程中之繁瑣。 Further, the semiconductor wafer 105 may be previously mounted on the heat sink 201 via the bonding material 203. Moreover, the semiconductor wafer 105 to which the heat sink 201 is attached Partial wire bonding (ILB) is performed on the film substrate 107. Thereby, the cumbersomeness in the manufacturing process can be eliminated.

[實施形態3] [Embodiment 3]

如下所示，根據圖式對本發明之其他實施形態進行說明。再者，本實施形態中所說明之情形以外之構成，與上述實施形態1、2相同。又，為了方便說明，對具有與上述實施形態1、2之圖式中所示之構件相同功能之構件，附上相同符號並省略其說明。 Other embodiments of the present invention will be described below with reference to the drawings. Further, the configuration other than the case described in the present embodiment is the same as that of the above-described first and second embodiments. In the following description, members having the same functions as those of the members shown in the above-described first and second embodiments are denoted by the same reference numerals, and their description will be omitted.

圖5係表示本實施形態之液晶模組300之一構成例之圖。 Fig. 5 is a view showing an example of the configuration of a liquid crystal module 300 of the present embodiment.

如圖5所示，本實施形態之液晶模組300包括液晶面板301、閘極驅動器302、配線帶303、輸入基板304、及上述實施形態1之源極驅動器100。於液晶面板301中，在四邊中之一邊上設置有10個源極驅動器100，在相對設置有源極驅動器100之邊垂直之兩邊上，分別設置有3個閘極驅動器302。輸入基板304係設置於源極驅動器100之與液晶面板301側相對之一側上。又，輸入基板304係由未圖示之控制部等對信號輸出進行控制。 As shown in FIG. 5, the liquid crystal module 300 of the present embodiment includes a liquid crystal panel 301, a gate driver 302, a wiring tape 303, an input substrate 304, and the source driver 100 of the first embodiment. In the liquid crystal panel 301, ten source drivers 100 are provided on one of the four sides, and three gate drivers 302 are provided on both sides perpendicular to the side on which the source driver 100 is disposed. The input substrate 304 is disposed on one side of the source driver 100 opposite to the liquid crystal panel 301 side. Further, the input substrate 304 controls the signal output by a control unit or the like (not shown).

如圖6所示，源極驅動器100中，設置有輸入端子配線區域101之一側之側邊壓接於輸入基板304，設置有輸出端子配線區域102一側之側邊壓接於液晶面板301。又，閘極驅動器302之輸出側壓接於液晶面板301。再者，源極驅動器100及閘極驅動器302之數量並不限於上述，亦可根據液晶面板301之掃描線之數量及驅動器之輸出數來適當決定。 As shown in FIG. 6, in the source driver 100, the side on the side where the input terminal wiring region 101 is provided is pressed against the input substrate 304, and the side on the side where the output terminal wiring region 102 is provided is pressed against the liquid crystal panel 301. . Further, the output side of the gate driver 302 is crimped to the liquid crystal panel 301. Further, the number of the source driver 100 and the gate driver 302 is not limited to the above, and may be appropriately determined depending on the number of scanning lines of the liquid crystal panel 301 and the number of outputs of the driver.

配線帶303係形成有用以對閘極驅動器302供給驅動信號 之配線的膜狀之帶。配線帶303中，一方之端邊壓接於液晶面板301，相對之另一方之端邊壓接於輸入基板304。 The wiring tape 303 is formed to supply a driving signal to the gate driver 302. The film-like belt of the wiring. One end of the wiring tape 303 is pressed against the liquid crystal panel 301, and the other end is pressed against the input substrate 304.

於上述構成中，自形成於輸入基板304上之配線將驅動信號及電源供給至閘極驅動器302及源極驅動器100，藉此液晶面板301受到驅動。亦即，液晶模組300中，如圖6所示，供給至閘極驅動器302之驅動信號及電源係自輸入基板304經由配線帶303及液晶面板301而供給(箭頭Y)。 In the above configuration, the wiring formed on the input substrate 304 supplies the driving signal and the power supply to the gate driver 302 and the source driver 100, whereby the liquid crystal panel 301 is driven. That is, in the liquid crystal module 300, as shown in FIG. 6, the drive signal and the power supply supplied to the gate driver 302 are supplied from the input substrate 304 via the wiring tape 303 and the liquid crystal panel 301 (arrow Y).

因此，如圖10所示，先前係經由形成於源極驅動器503之通過式配線區域513之配線，將來自輸入基板504之驅動信號及電源供給至閘極驅動器502，但如圖6所示，本實施形態之液晶模組300係可藉由配線帶303，而將來自輸入基板304之驅動信號及電源供給至閘極驅動器302。藉此，先前有時藉由通過式配線區域513之形狀，而使配線局部為窄間距，但若使用本實施例之配線帶303，則可形成間距為等間隔之簡單配線。 Therefore, as shown in FIG. 10, the driving signal and the power source from the input substrate 504 are supplied to the gate driver 502 via the wiring formed in the pass wiring region 513 of the source driver 503, but as shown in FIG. In the liquid crystal module 300 of the present embodiment, the driving signal and the power source from the input substrate 304 can be supplied to the gate driver 302 by the wiring tape 303. As a result, the wiring is partially narrowed by the shape of the through wiring region 513. However, if the wiring tape 303 of the present embodiment is used, a simple wiring having a pitch at equal intervals can be formed.

因此，源極驅動器100中即便未形成用以對閘極驅動器302供給驅動信號之配線亦不會受到影響。因源極驅動器100之寬度減小，故液晶面板301之側邊之配置區域為空的，因此即便與先前為相同尺寸之液晶面板301及相同個數之源極驅動器100，亦可配置配線帶303。由此，雖然配線帶303之類零件數增加，但由於源極驅動器100之成本降低，從而可相應地總體上降低成本。 Therefore, even if the wiring for supplying the driving signal to the gate driver 302 is not formed in the source driver 100, it is not affected. Since the width of the source driver 100 is reduced, the arrangement area of the side of the liquid crystal panel 301 is empty. Therefore, even if the liquid crystal panel 301 and the same number of source drivers 100 of the same size are used, the wiring tape can be disposed. 303. Thus, although the number of parts such as the wiring tape 303 is increased, the cost of the source driver 100 is lowered, so that the overall cost can be reduced accordingly.

又，由源極驅動器100之半導體晶片105所產生之熱除了經由與先前相同之路徑釋放之外，在本實施例中進而可經 由熱傳導圖案104及鏈輪部103，而釋放至液晶面板301及輸入基板304。因此，可實現散熱性優異之液晶模組。 Moreover, the heat generated by the semiconductor wafer 105 of the source driver 100 can be further passed through in the present embodiment, in addition to being released via the same path as before. The heat conduction pattern 104 and the sprocket portion 103 are released to the liquid crystal panel 301 and the input substrate 304. Therefore, a liquid crystal module excellent in heat dissipation can be realized.

再者，上述係對液晶模組300中包括源極驅動器100的情況進行了說明，但並不限於此，亦可包括源極驅動器110及源極驅動器200。此時，可進一步提高液晶模組300之散熱性。 Furthermore, although the case where the source driver 100 is included in the liquid crystal module 300 has been described above, the present invention is not limited thereto, and may include the source driver 110 and the source driver 200. At this time, the heat dissipation of the liquid crystal module 300 can be further improved.

本發明並不限定於上述各實施形態，在請求項所示之範圍內可進行各種變更，即便係對不同實施形態中所分別揭示之技術性手段加以適當組合所得的實施形態，亦包含於本發明之技術性範圍內。 The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the claims, and the embodiments obtained by appropriately combining the technical means disclosed in the different embodiments are also included in the present invention. Within the technical scope of the invention.

[產業上之可利用性] [Industrial availability]

本發明不僅可較佳地用於關於期望提高散熱量之膜安裝型之源極驅動器之領域中，而且可較佳地用於源極驅動器之製造之相關領域中，進而亦可廣泛地用於包括源極驅動器之液晶模組之領域中。 The present invention can be preferably used not only in the field of a film-mounted type source driver which is desired to increase heat dissipation, but also preferably used in the field of manufacturing of a source driver, and can also be widely used. In the field of liquid crystal modules including source drivers.

100、110、200‧‧‧源極驅動器 100, 110, 200‧‧‧ source drivers

101‧‧‧輸入端子配線區域(第1配線) 101‧‧‧Input terminal wiring area (first wiring)

102、112‧‧‧輸出端子配線區域(第2配線) 102, 112‧‧‧ Output terminal wiring area (2nd wiring)

103‧‧‧鏈輪部 103‧‧‧Sprocket department

104、114‧‧‧熱傳導圖案(第3配線) 104, 114‧‧‧Heat conduction pattern (3rd wiring)

105‧‧‧半導體晶片 105‧‧‧Semiconductor wafer

106‧‧‧孔 106‧‧‧ holes

107‧‧‧膜基材 107‧‧‧ film substrate

201‧‧‧散熱體(金屬板) 201‧‧‧ Heat sink (metal plate)

202‧‧‧懸掛引線 202‧‧‧ hanging leads

300‧‧‧液晶模組 300‧‧‧LCD Module

301‧‧‧液晶面板 301‧‧‧ LCD panel

302‧‧‧閘極驅動器 302‧‧‧gate driver

303‧‧‧配線帶 303‧‧‧Wiring tape

304‧‧‧輸入基板(基板) 304‧‧‧Input substrate (substrate)

圖1係表示本發明之源極驅動器之一實施形態的平面圖。 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing an embodiment of a source driver of the present invention.

圖2係表示本發明之源極驅動器之其他實施形態的平面圖。 Fig. 2 is a plan view showing another embodiment of the source driver of the present invention.

圖3(a)-(e)係表示本發明之源極驅動器之一實施例之製造工序的圖。 3(a) to 3(e) are views showing a manufacturing process of an embodiment of a source driver of the present invention.

圖4係表示本發明之源極驅動器之進而其他實施形態的平面圖。 Fig. 4 is a plan view showing still another embodiment of the source driver of the present invention.

圖5係表示本發明之液晶模組之一實施形態的平面圖。 Fig. 5 is a plan view showing an embodiment of a liquid crystal module of the present invention.

圖6係上述液晶模組之角部之放大圖。 Fig. 6 is an enlarged view of a corner portion of the above liquid crystal module.

圖7係表示先前之液晶模組之構成的平面圖。 Fig. 7 is a plan view showing the configuration of a conventional liquid crystal module.

圖8係表示先前之源極驅動器之構成的平面圖。 Figure 8 is a plan view showing the configuration of a prior source driver.

圖9係表示上述先前之源極驅動器之製作方法的圖。 Fig. 9 is a view showing a method of fabricating the above-described prior art source driver.

圖10係上述先前之液晶模組之角部之放大圖。 Figure 10 is an enlarged view of a corner portion of the above prior liquid crystal module.

100‧‧‧源極驅動器 100‧‧‧Source Driver

101‧‧‧輸入端子配線區域(第1配線) 101‧‧‧Input terminal wiring area (first wiring)

102‧‧‧輸出端子配線區域(第2配線) 102‧‧‧Output terminal wiring area (2nd wiring)

103‧‧‧鏈輪部 103‧‧‧Sprocket department

104‧‧‧熱傳導圖案(第3配線) 104‧‧‧Heat conduction pattern (3rd wiring)

105‧‧‧半導體晶片 105‧‧‧Semiconductor wafer

106‧‧‧孔 106‧‧‧ holes

107‧‧‧膜基材 107‧‧‧ film substrate

Claims (10)

一種源極驅動器，其係於膜基材之表面安裝有半導體晶片，且於上述膜基材之表面分別形成第1配線及第2配線而成的膜安裝型源極驅動器；且上述半導體晶片設有複數個可與外部連接之端子，上述第1配線與上述半導體晶片之端子中輸入電信號之端子相連接，上述第2配線與上述半導體晶片之端子中輸出電信號之端子相連接；該源極驅動器之特徵在於：於上述膜基材之兩端具有鏈輪部，其係形成連續之孔及金屬部而成，且上述金屬部係形成於該膜基材之表面；上述第1配線之未與上述半導體晶片之端子相連接之端部係朝向未設置有上述鏈輪部之一端側而形成，且上述第2配線之未與上述半導體晶片之端子相連接之端部係朝向與形成有上述第1配線之端部之一端側相對向之一端側而形成；於上述膜基材之表面上形成有第3配線，上述第3配線將上述半導體晶片之端子中未連接於上述第1配線及第2配線的端子與上述鏈輪部之金屬部加以連接。 A source driver is a film-mounted type source driver in which a semiconductor wafer is mounted on a surface of a film substrate, and a first wiring and a second wiring are formed on a surface of the film substrate; and the semiconductor wafer is provided a plurality of terminals connectable to the outside, wherein the first wiring is connected to a terminal for inputting an electrical signal to a terminal of the semiconductor wafer, and the second wiring is connected to a terminal for outputting an electrical signal in a terminal of the semiconductor wafer; The pole driver is characterized in that a sprocket portion is formed at both ends of the film substrate, and a continuous hole and a metal portion are formed, and the metal portion is formed on a surface of the film substrate; the first wiring is An end portion that is not connected to the terminal of the semiconductor wafer is formed to be formed on one end side where the sprocket portion is not provided, and an end portion of the second wiring that is not connected to the terminal of the semiconductor wafer is formed and formed One end side of the end portion of the first wiring is formed to face one end side; a third wiring is formed on a surface of the film substrate, and the third wiring is the semiconductor wafer Terminal is not connected to the first wiring and second wiring terminals to be connected to the metal portion of the portion of the sprocket. 如請求項1之源極驅動器，其中上述鏈輪部係由層積於上述膜基材之表面且包含銅或不銹鋼之散熱體所形成。 The source driver of claim 1, wherein the sprocket portion is formed by a heat sink comprising copper or stainless steel laminated on a surface of the film substrate. 如請求項1之源極驅動器，其中上述第3配線係遍及由上述第1配線中兩端之第1配線 與上述第2配線中兩端之第2配線所夾持之區域之整個面上，以與上述兩端之第1配線及兩端之第2配線電性絕緣的方式形成。 The source driver of claim 1, wherein the third wiring system extends over the first wiring from both ends of the first wiring The entire surface of the region sandwiched by the second wiring at both ends of the second wiring is formed to be electrically insulated from the first wiring and the second wiring at both ends. 如請求項3之源極驅動器，其中上述鏈輪部之金屬部與上述第3配線係一體形成。 The source driver of claim 3, wherein the metal portion of the sprocket portion is formed integrally with the third wiring system. 如請求項3之源極驅動器，其中上述第1配線中兩端之第1配線之與上述半導體晶片端子連接之部分的形成方向與上述第2配線中兩端之第2配線之與上述半導體晶片端子連接之部分的形成方向為大致垂直。 The source driver of claim 3, wherein a direction in which a portion of the first wiring at both ends of the first wiring is connected to the semiconductor wafer terminal and a second wiring at both ends of the second wiring are opposite to the semiconductor wafer The direction in which the portions of the terminal are connected is substantially perpendicular. 如請求項1之源極驅動器，其中包括安裝於上述半導體晶片上側之表面且具有懸掛引線之金屬板；上述懸掛引線與上述第3配線連接。 The source driver of claim 1, comprising a metal plate mounted on a surface of the upper side of the semiconductor wafer and having a suspension lead; and the suspension lead is connected to the third wiring. 如請求項1之源極驅動器，其中上述源極驅動器於以上述鏈輪部位於寬度方向之兩端之長條帶狀的形態製作後，沿寬度方向切斷而各自分離。 The source driver of claim 1, wherein the source driver is formed in a strip shape in which both ends of the sprocket portion are located in the width direction, and then cut and separated in the width direction. 一種源極驅動器之製造方法，該源極驅動器係於膜基材之表面安裝有半導體晶片，且於上述膜基材之表面分別形成第1配線及第2配線而成的膜安裝型源極驅動器；且上述半導體晶片設有複數個可與外部連接之端子，上述第1配線與上述半導體晶片之端子中之輸入電信號之端子相連接，上述第2配線與上述半導體晶片之端子中輸 出電信號之端子相連接；該製造方法之特徵在於包含：第1步驟，其係於長條帶狀之膜基材之表面同時連續地形成上述第1配線、上述第2配線、金屬部及第3配線，上述第1配線之未與上述半導體晶片之端子相連接的端部朝向一方之長度方向，上述第2配線之未與上述半導體晶片之端子相連接的端部朝向另一方之長度方向，上述金屬部係位於上述表面之兩端，上述第3配線係將上述半導體晶片之端子中未連接於上述第1配線及第2配線的端子與上述金屬部加以連接；第2步驟，其係以連接於上述第1配線及第2配線之方式將上述半導體晶片連續地安裝；及第3步驟，其係沿寬度方向切斷上述膜基材，使上述源極驅動器各自分離。 A method of manufacturing a source driver in which a semiconductor wafer is mounted on a surface of a film substrate, and a film-mounted source driver is formed by forming a first wiring and a second wiring on a surface of the film substrate. And the semiconductor wafer is provided with a plurality of terminals connectable to the outside, wherein the first wiring is connected to a terminal of an input electrical signal in a terminal of the semiconductor wafer, and the second wiring and the terminal of the semiconductor wafer are connected The terminal of the power-generating signal is connected; the manufacturing method includes the first step of continuously forming the first wiring, the second wiring, and the metal portion on the surface of the long strip-shaped film substrate The third wiring, the end portion of the first wiring not connected to the terminal of the semiconductor wafer is oriented in one longitudinal direction, and the end portion of the second wiring not connected to the terminal of the semiconductor wafer is oriented in the other longitudinal direction The metal portion is located at both ends of the surface, and the third wiring system connects the terminal of the semiconductor wafer that is not connected to the first wiring and the second wiring to the metal portion; and the second step The semiconductor wafer is continuously attached so as to be connected to the first wiring and the second wiring, and the third step is to cut the film substrate in the width direction to separate the source drivers. 如請求項8之源極驅動器之製造方法，其中於上述半導體晶片，於一方之表面上安裝有具有懸掛引線之金屬板；上述第2步驟中，在將上述半導體晶片以安裝有上述金屬板之側成為上側之方式安裝之後，將上述懸掛引線連接於上述第3配線。 The method of manufacturing a source driver according to claim 8, wherein the semiconductor wafer has a metal plate having a suspension lead mounted on one surface thereof; and in the second step, the semiconductor wafer is mounted on the semiconductor wafer After the side is mounted on the upper side, the suspension lead is connected to the third wiring. 一種液晶模組，其特徵在於包含：液晶面板；如請求項1至7中任一項之源極驅動器，其係於上述液晶面板之四側邊中的一側邊或相對向之兩側邊上設置有複數個； 閘極驅動器，其係於上述液晶面板之四側邊中相對於設置上述源極驅動器之側邊為垂直之側邊上設置有複數個；基板，其係連接於上述源極驅動器；及配線帶，其係配置於設置有上述閘極驅動器之側邊側之設置有上述源極驅動器之側邊之端上，且將上述液晶面板與上述基板加以連接。 A liquid crystal module, comprising: a liquid crystal panel; the source driver according to any one of claims 1 to 7, which is attached to one side or opposite sides of four sides of the liquid crystal panel There are a plurality of settings on the top; a gate driver disposed on a side of the four sides of the liquid crystal panel that is perpendicular to a side on which the source driver is disposed; a substrate connected to the source driver; and a wiring strip And disposed on a side of the side of the gate driver on which the source driver is disposed, and the liquid crystal panel is connected to the substrate.
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US20100302474A1 (en) 2010-12-02
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CN101878524A (en) 2010-11-03
TW200947570A (en) 2009-11-16

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