TWI410287B - Liquid processing device and processing liquid supply method - Google Patents

Liquid processing device and processing liquid supply method Download PDF

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TWI410287B
TWI410287B TW97135006A TW97135006A TWI410287B TW I410287 B TWI410287 B TW I410287B TW 97135006 A TW97135006 A TW 97135006A TW 97135006 A TW97135006 A TW 97135006A TW I410287 B TWI410287 B TW I410287B
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chemical solution
solvent
supply
unit
additional chemical
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TW97135006A
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TW200930469A (en
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Yuji Kamikawa
Shigenori Kitahara
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Tokyo Electron Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a liquid treatment device capable of immediately and precisely measuring concentration of chemicals when the concentration of a treatment liquid containing two types of chemicals or more is measured and also, of precisely measuring the concentration of chemicals when the concentration of a treatment liquid containing relatively light concentration of chemicals is measured; and a treatment liquid supply method therefor. <P>SOLUTION: The liquid treatment device includes a treatment section 80 for treatment of an object to be treated by a treatment liquid; a supply passage 1 connected to the treatment section 80, for guiding a treatment liquid to the treatment section 80; a solvent supply section 7 for supplying a solvent to the supply passage 1; and a chemicals supply section 5 for supplying chemicals to the supply passage 1 through a chemicals supply passage 6 to produce chemicals diluted by the solvent. A measurement section 10 for measuring electrical conductivity of the chemicals diluted by the solvent is located on the downstream side of connection places 25a, 35a, 45a on the supply passage 1, to which the chemicals supply passage 6 is connected. An additional chemicals supply section 11 for supplying additional chemicals different from the chemicals is connected to the downstream side of a measurement place 10a at which the measurement section 10 is located out of the supply passage 1, through the additional chemicals supply passage 3. <P>COPYRIGHT: (C)2009,JPO&amp;INPIT

Description

液處理裝置及處理液供給方法Liquid processing device and processing liquid supply method

本發明係關於測定處理液中所含化學藥品溶液之濃度,同時以該處理液處理被處理體之液處理裝置,及將處理液對於被處理體供給之處理液供給方法。The present invention relates to a liquid processing apparatus for measuring a concentration of a chemical solution contained in a processing liquid, a processing liquid for treating the object to be processed, and a processing liquid supply method for supplying the processing liquid to the object to be processed.

自以往,清洗為被處理體之半導體晶圓(以下亦稱晶圓)時,係使用於為溶劑之純水添加有NH4 OH(氫氧化銨)與過氧化氫水之氨過氧化氫水(SC1),或於為溶劑之純水添加有鹽酸與過氧化氫水之鹽酸過氧化氫水(SC2),或將氫氟酸以純水稀釋過之稀氫氟酸等。Conventionally, when cleaning a semiconductor wafer (hereinafter also referred to as a wafer) of a processed object, it is used for adding ammonia hydrogen peroxide water of NH 4 OH (ammonium hydroxide) and hydrogen peroxide water to the pure water of the solvent. (SC1), or hydrochloric acid hydrogen peroxide water (SC2) containing hydrochloric acid and hydrogen peroxide water, or dilute hydrofluoric acid diluted with pure water by hydrofluoric acid, or the like.

在此,氨過氧化氫水(SC1)主要用在將附著於晶圓之微粒除去,鹽酸過氧化氫水主要用在除去晶圓之金屬污染,稀氫氟酸主要用在除去晶圓之污染。Here, ammonia hydrogen peroxide water (SC1) is mainly used to remove particles adhering to the wafer, hydrogen peroxide water is mainly used to remove metal contamination of the wafer, and dilute hydrofluoric acid is mainly used to remove wafer contamination. .

為了測定如此種氨過氧化氫水(SC1)或鹽酸過氧化氫水(SC2)或稀氫氟酸之處理液中所含化學藥品溶液之濃度,已知有測定處理液之導電率之方法,或測定通過處理液之光之穿透率(處理液之吸光度)之方法(參照專利文獻1、專利文獻2及專利文獻3)。In order to determine the concentration of a chemical solution contained in such a treatment liquid of ammonia hydrogen peroxide (SC1) or hydrogen peroxide water (SC2) or dilute hydrofluoric acid, a method for measuring the conductivity of the treatment liquid is known. Or a method of measuring the transmittance of light passing through the treatment liquid (absorbance of the treatment liquid) (see Patent Document 1, Patent Document 2, and Patent Document 3).

【專利文獻1】日本特開昭62-8040號公報[Patent Document 1] Japanese Patent Laid-Open No. 62-8040

【專利文獻2】日本特開平10-154683號公報[Patent Document 2] Japanese Patent Laid-Open No. Hei 10-154683

【專利文獻3】日本特開2005-189207號公報[Patent Document 3] Japanese Patent Laid-Open Publication No. 2005-189207

然而,如上所述,於氨過氧化氫水(SC1)含有NH4 OH與過氧化氫水2種化學藥品溶液,又,同樣地,於鹽酸過氧化氫水(SC2)含有鹽酸與過氧化氫水2種化學藥品溶液。However, as described above, the ammonia hydrogen peroxide water (SC1) contains two kinds of chemical solutions of NH 4 OH and hydrogen peroxide water, and similarly, hydrochloric acid hydrogen peroxide (SC2) contains hydrochloric acid and hydrogen peroxide. Water 2 kinds of chemical solutions.

因此,測定該等處理液之導電率而測定化學藥品溶液之濃度之情形,由於其中之一之化學藥品溶液導致之導電效果會與另一化學藥品溶液導致之導電效果混雜在一起,因此,難以測定各化學藥品溶液之準確濃度。此外,測定該等處理液之光之穿透率(處理液之吸光度)而測定化學藥品溶液濃度之情形,雖能準確測定各化學藥品溶液之濃度,但是測定時間耗時。Therefore, when the conductivity of the treatment liquid is measured and the concentration of the chemical solution is measured, it is difficult that the conductive effect caused by one of the chemical solutions is mixed with the conductive effect caused by the other chemical solution. Determine the exact concentration of each chemical solution. Further, when the transmittance of the light of the treatment liquid (the absorbance of the treatment liquid) is measured and the concentration of the chemical solution is measured, the concentration of each chemical solution can be accurately measured, but the measurement time is time-consuming.

又,於使用含較濃濃度之化學藥品溶液之處理液之情形,即供給之化學藥品溶液量多之情形,藉直接測定所供給之化學藥品溶液之流量,能測定該化學藥品溶液之濃度。然而,使用含較低濃度之化學藥品溶液之處理液之情形,由於供給之化學藥品溶液量少,因此非常難以準確測定供給之化學藥品溶液之流量。Further, in the case of using a treatment liquid containing a relatively concentrated chemical solution, that is, when the amount of the chemical solution to be supplied is large, the concentration of the chemical solution can be measured by directly measuring the flow rate of the supplied chemical solution. However, in the case of using a treatment liquid containing a chemical solution having a lower concentration, since the amount of the chemical solution supplied is small, it is extremely difficult to accurately measure the flow rate of the supplied chemical solution.

本發明係考量如此點而生,目的在於提供一種液處理裝置,能於含2種以上化學藥品溶液之處理液之濃度測定時,迅速且準確地測定化學藥品溶液之濃度,且於測定含較低濃度之化學藥品溶液之處理液之濃度時,能準確地測定化學藥品溶液之濃度,並提供一種將處理液對於被處理體供給之處理液供給方法。The present invention has been made in view of the above circumstances, and an object thereof is to provide a liquid processing apparatus capable of rapidly and accurately measuring the concentration of a chemical solution when measuring the concentration of a treatment liquid containing two or more kinds of chemical solutions, and determining the concentration of the chemical solution. When the concentration of the treatment liquid of the low-concentration chemical solution is used, the concentration of the chemical solution can be accurately measured, and a treatment liquid supply method for supplying the treatment liquid to the object to be processed can be provided.

依照本發明之液處理裝置,係使用藉由將溶劑與化學藥品溶液混合而產生之處理液來處理被處理體;特徵在於包含:The liquid processing apparatus according to the present invention processes the object to be processed by using a treatment liquid produced by mixing a solvent with a chemical solution; characterized by comprising:

處理部,藉由處理液處理被處理體;a processing unit that processes the object to be processed by the treatment liquid;

供給通道,與處理部連結,將處理液引導到該處理部;a supply passage connected to the processing unit to guide the processing liquid to the processing unit;

溶劑供給部,將溶液供給到供給通道;a solvent supply unit that supplies the solution to the supply channel;

化學藥品溶液供給部,經由化學藥品溶液供給通道將化學藥品溶液供給到供給通道,並產生經溶劑稀釋之化學藥品溶液;The chemical solution supply unit supplies the chemical solution to the supply channel via the chemical solution supply channel, and generates a solvent-diluted chemical solution;

測定部,設於在供給通道之中化學藥品溶液供給通道所連結之連結部位之下游側,測定經溶劑稀釋之化學藥品溶液之導電率;The measuring unit is disposed on the downstream side of the connection portion to which the chemical solution supply channel is connected in the supply channel, and measures the conductivity of the chemical solution diluted by the solvent;

追加化學藥品溶液供給部,連結於在供給通道之中測定部所設置之測定部位之下游側,經由追加化學藥品溶液供給通道而供給與該化學藥品溶液相異之追加化學藥品溶液。The additional chemical solution supply unit is connected to the downstream side of the measurement site provided in the measurement unit in the supply channel, and supplies an additional chemical solution different from the chemical solution via the additional chemical solution supply channel.

依此方式,在供給通道之中於化學藥品溶液供給通道所連結之連結部位之下游側,設置有測定導電率之測定部,並於供給通道之中,測定部所設置之測定部位之下游側,連結有經由追加化學藥品溶液供給通道供給與前述化學藥品溶液相異之追加化學藥品溶液之追加化學藥品溶液供給部,因此,當測定含2種以上化學藥品溶液之處理液之濃度時,能迅速且準確地測定化學藥品溶液之濃度。又,於清洗液含較低濃度之化學藥品溶液時,即供給之化學藥品溶液量少時,亦能將從測定導電率之測定部所供給之化學藥品溶液之量準確地測定。In this manner, a measurement unit that measures the conductivity is provided on the downstream side of the connection portion to which the chemical solution supply channel is connected in the supply channel, and is provided on the downstream side of the measurement portion provided in the measurement unit in the supply channel. In addition, an additional chemical solution supply unit that supplies an additional chemical solution different from the chemical solution via the additional chemical solution supply channel is connected, and therefore, when the concentration of the treatment liquid containing two or more kinds of chemical solutions is measured, The concentration of the chemical solution is quickly and accurately determined. Further, when the cleaning solution contains a chemical solution having a relatively low concentration, that is, when the amount of the chemical solution to be supplied is small, the amount of the chemical solution supplied from the measuring unit for measuring the conductivity can be accurately measured.

依照本發明之液處理裝置,追加化學藥品溶液供給部,較佳為供給過氧化氫作為追加化學藥品溶液。In the liquid processing apparatus according to the present invention, the chemical solution supply unit is added, and hydrogen peroxide is preferably supplied as the additional chemical solution.

依照本發明之液處理裝置,較佳為更包含:計算部,依據由測定部測定之導電率,計算從化學藥品溶液供給部所供給之化學藥品溶液之濃度;Preferably, the liquid processing apparatus according to the present invention further includes: a calculating unit that calculates a concentration of the chemical solution supplied from the chemical solution supply unit based on a conductivity measured by the measuring unit;

調整部,依據由計算部所計算之化學藥品溶液之濃度,調整從化學藥品溶液供給部所供給之化學藥品溶液之量。The adjustment unit adjusts the amount of the chemical solution supplied from the chemical solution supply unit based on the concentration of the chemical solution calculated by the calculation unit.

藉由如此的構成,能夠隨時調整從化學藥品溶液供給部供給之化學藥品溶液之濃度,能使該化學藥品溶液之濃度迅速成為適當濃度。With such a configuration, the concentration of the chemical solution supplied from the chemical solution supply unit can be adjusted at any time, and the concentration of the chemical solution can be quickly brought to an appropriate concentration.

依照本發明之液處理裝置,較佳為更包含:濃度均勻化部,設置在供給通道之中化學藥品溶液供給通道所連結之連結部位與測定部所設置之測定部位之間,使溶劑與化學藥品溶液混合並使均勻化。Preferably, the liquid processing apparatus according to the present invention further includes a concentration equalizing unit provided between the connection portion of the supply channel in which the chemical solution supply channel is connected and the measurement portion provided in the measurement unit to cause solvent and chemistry The drug solution is mixed and homogenized.

藉由如此的構成、測定部,能以良好精度測定經溶劑稀釋之化學藥品溶液之導電率,同時能迅速地提供測定結果。According to such a configuration and measurement unit, the conductivity of the solvent-diluted chemical solution can be measured with good precision, and the measurement result can be quickly provided.

於上述液處理裝置中,較佳為,測定部於經溶劑稀釋之化學藥品溶液通過該測定部後0.5秒以內,提供導電率之測定結果。In the above-described liquid processing apparatus, it is preferable that the measurement unit provides a measurement result of the electrical conductivity within 0.5 second after the chemical solution diluted with the solvent passes through the measurement unit.

依照本發明之處理液供給方法,係將使溶劑與化學藥品溶液混合而產生之處理液對於被處理體供給;特徵在於包含以下步驟:According to the method of supplying a treatment liquid according to the present invention, a treatment liquid obtained by mixing a solvent and a chemical solution is supplied to a target object; and the method comprises the steps of:

溶劑供給步驟,對於供給通道供給溶劑;a solvent supply step of supplying a solvent to the supply channel;

化學藥品溶液供給步驟,對供給通道供給化學藥品溶液,並產生經溶劑稀釋之化學藥品溶液;a chemical solution supply step of supplying a chemical solution to the supply channel and generating a chemical solution diluted with the solvent;

測定步驟,藉測定經溶劑稀釋之化學藥品溶液之導電率,而測定於該化學藥品溶液供給步驟所供給之化學藥品溶液之濃度;a measuring step of determining a concentration of the chemical solution supplied in the chemical solution supply step by measuring a conductivity of the chemical solution diluted by the solvent;

追加化學藥品溶液供給步驟,對於經溶劑稀釋之化學藥品溶液,供給與該化學藥品溶液相異之追加化學藥品溶液而產生處理液;An additional chemical solution supply step of supplying a chemical solution that is diluted with a solvent to an additional chemical solution different from the chemical solution to generate a treatment liquid;

基板處理步驟,將該處理液對被處理體供給。In the substrate processing step, the treatment liquid is supplied to the object to be processed.

依照如此的方法,由於藉由測定經溶劑稀釋之化學藥品溶液之導電率,而測定於化學藥品溶液供給步驟所供給之化學藥品溶液之濃度後,對於經溶劑稀釋之化學藥品溶液供給追加化學藥品溶液而產生處理液,故測定含2種以上化學藥品溶液之處理液之濃度時,能迅速且準確地測定化學藥品溶液之濃度。又,清洗液含較低濃度之化學藥品溶液時,即供給之化學藥品溶液量少時,仍能將從測定導電率之測定部供給之化學藥品溶液量準確地測定。According to such a method, since the concentration of the chemical solution supplied in the chemical solution supply step is measured by measuring the conductivity of the chemical solution diluted with the solvent, the additional chemical is supplied to the chemical solution diluted with the solvent. Since the treatment liquid is generated by the solution, when the concentration of the treatment liquid containing two or more kinds of chemical solutions is measured, the concentration of the chemical solution can be quickly and accurately measured. Further, when the cleaning liquid contains a chemical solution having a relatively low concentration, that is, when the amount of the chemical solution to be supplied is small, the amount of the chemical solution supplied from the measuring unit for measuring the conductivity can be accurately measured.

依照本發明,由於測定經溶劑稀釋之化學藥品溶液之導電率後,供給與該化學藥品溶液相異之追加化學藥品溶液,因此測定含2種以上化學藥品溶液之處理液之濃度時,能迅速且準確地測定化學藥品溶液之濃度,且測定含較低濃度之化學藥品溶液之處理液之濃度時,能準確地測定化學藥品溶液之濃度。According to the present invention, since the conductivity of the chemical solution diluted with the solvent is measured, an additional chemical solution different from the chemical solution is supplied, so that the concentration of the treatment liquid containing two or more kinds of chemical solutions can be quickly measured. When the concentration of the chemical solution is accurately measured and the concentration of the treatment liquid containing the chemical solution having a lower concentration is measured, the concentration of the chemical solution can be accurately determined.

(實施發明之最佳形態)(Best form of implementing the invention) 實施形態Implementation form

以下,對於本發明之液處理裝置及處理液供給方法之實施形態,參照圖式說明。在此,圖1顯示本發明實施形態之液處理裝置概略構成圖。Hereinafter, embodiments of the liquid processing apparatus and the processing liquid supply method of the present invention will be described with reference to the drawings. Here, Fig. 1 is a view showing a schematic configuration of a liquid processing apparatus according to an embodiment of the present invention.

依照本實施形態之液處理裝置,係用於處理作為被處理體之半導體晶圓(以下亦稱晶圓W),係使用藉由將溶劑與化學藥品溶液混合而產生之處理液進行處理。The liquid processing apparatus according to the present embodiment is for processing a semiconductor wafer (hereinafter also referred to as a wafer W) as a target object, and is treated by using a processing liquid generated by mixing a solvent and a chemical solution.

圖1所示液處理裝置,包含:處理部80,利用處理液處理晶圓W;供給通道1,與處理部80連結,將處理液引導到該處理部80;溶劑供給部7,對於供給通道1供給溶劑;化學藥品溶液供給部5,經由化學藥品溶液供給通道6將化學藥品溶液對於供給通道1供給。The liquid processing apparatus shown in Fig. 1 includes a processing unit 80 that processes the wafer W with a processing liquid, a supply channel 1 that is coupled to the processing unit 80, and directs the processing liquid to the processing unit 80, and a solvent supply unit 7 for the supply channel. 1 The solvent is supplied; the chemical solution supply unit 5 supplies the chemical solution to the supply channel 1 via the chemical solution supply channel 6.

其中,處理部80,包含:殼體81;固持部82,設置於殼體81內,固持晶圓W;處理液供給部83,對於以固持部82固持之晶圓W之表面(頂面),供給處理液;背面處理液供給部84,對於該晶圓W之背面(底面)供給處理液。The processing unit 80 includes a case 81, a holding portion 82 that is provided in the case 81, holds the wafer W, and a processing liquid supply unit 83 for the surface (top surface) of the wafer W held by the holding portion 82. The processing liquid is supplied to the back surface processing liquid supply unit 84, and the processing liquid is supplied to the back surface (bottom surface) of the wafer W.

又,如圖1所示,化學藥品溶液供給部5,具:氫氟酸供給部21,供給氫氟酸;鹽酸供給部31,供給鹽酸;NH4 OH供給部41,供給NH4 OH(氫氧化銨)。Further, as shown in Fig. 1, the chemical solution supply unit 5 has a hydrofluoric acid supply unit 21 and supplies hydrofluoric acid; a hydrochloric acid supply unit 31 supplies hydrochloric acid; and an NH 4 OH supply unit 41 supplies NH 4 OH (hydrogen). Ammonium oxide).

又,如圖1所示,化學藥品溶液供給通道6,具:氫氟酸供給通道25,將從氫氟酸供給部21供給之氫氟酸導入供給通道1;鹽酸供給通道35,將從鹽酸供給部31供給之鹽酸導入供給通道1;NH4 OH供給通道45,將從NH4 OH供給部41供給之NH4 OH導入供給通道1。Further, as shown in Fig. 1, the chemical solution supply passage 6 has a hydrofluoric acid supply passage 25, and the hydrofluoric acid supplied from the hydrofluoric acid supply unit 21 is introduced into the supply passage 1; the hydrochloric acid supply passage 35 is supplied with hydrochloric acid. introducing a supply of the supply passage 31 supplying portion hydrochloride; NH2 4 OH supply passage 45, supplied from the NH NH 4 OH 4 OH supplying portion 41 is introduced into the supply passage 1.

又,如圖1所示,於連結於氫氟酸供給部21之氫氟酸供給通道25,設置有調整流動於該氫氟酸供給通道25之氫氟酸流量之氫氟酸調節器22。同樣地,與鹽酸供給部31連結之鹽酸供給通道35,設置有調整流動於該鹽酸供給通道35之鹽酸流量之鹽酸調節器32,與NH4 OH供給部41連結之NH4 OH供給通道45,設置有調整流動於該NH4 OH供給通道45之NH4 OH流量的NH4 OH調節器42。Further, as shown in FIG. 1, the hydrofluoric acid supply passage 25 connected to the hydrofluoric acid supply unit 21 is provided with a hydrofluoric acid regulator 22 for adjusting the flow rate of hydrofluoric acid flowing through the hydrofluoric acid supply passage 25. Similarly, the supply of hydrochloric acid portion hydrochloride supply passage 31 connected to the 35, is provided to adjust the flow 32, and NH2 4 OH supplying section NH 41 concatenate 4 OH supply passage 45 to the regulator hydrochloric flow rate of the hydrochloric acid supply passage acid 35, the 45 is provided to adjust the flow to the flow rate of the NH 4 OH NH 4 OH NH 4 OH feed channel regulator 42.

又,如圖1所示,氫氟酸供給通道25,於氫氟酸調節器22之下游側經由開閉自如之氫氟酸供給閥24而於連結部位25a連結到供給通道1。同樣地,鹽酸供給通道35,於鹽酸調節器32之下游側經由開閉自如之鹽酸供給閥34而於連結部位35a連結到供給通道1,NH4 OH供給通道45,於NH4 OH調節器42之下游側經由開閉自如之NH4 OH供給閥44而於連結部位45a連結到供給通道1。Moreover, as shown in FIG. 1, the hydrofluoric acid supply passage 25 is connected to the supply passage 1 at the connection portion 25a via the hydrofluoric acid supply valve 24 that is openable and closable on the downstream side of the hydrofluoric acid regulator 22. Similarly, the hydrochloric acid supply passage 35 is connected to the supply passage 1 at the joint portion 35a via the open/closed hydrochloric acid supply valve 34 on the downstream side of the hydrochloric acid regulator 32, and the NH 4 OH supply passage 45 is disposed in the NH 4 OH regulator 42. The downstream side is connected to the supply passage 1 at the joint portion 45a via the NH 4 OH supply valve 44 that is openable and closable.

又,如圖1所示,溶劑供給部7具:DIW供給部61,對於供給通道1供給純水(DIW);加熱DIW供給部66,對於供給通道1供給經加熱部66a加熱之純水(DIW)。Further, as shown in Fig. 1, the solvent supply unit 7 has a DIW supply unit 61, supplies pure water (DIW) to the supply channel 1, and heats the DIW supply unit 66, and supplies the pure water heated by the heating unit 66a to the supply channel 1 ( DIW).

又,如圖1所示,於供給通道1之DIW供給部61之下游側,設置有調整流動於供給通道1內之純水流量之純水調節器62。又,於該純水調節器62之下游側,設置有測定流動於供給通道1內之純水流量之純水流量計63。又,同樣地,於供給通道1之加熱DIW供給部66之下游側,設置有調整游動於供給通道1內之經加熱純水流量之加熱純水調節器67,於該加熱純水調節器67之下游側,設置有測定流動於供給通道1內之經加熱純水流量之加熱純水流量計68。又,於純水流量計63與加熱純水流量計68之下游側,設置有開閉自如之純水供給閥64。Further, as shown in FIG. 1, on the downstream side of the DIW supply portion 61 of the supply passage 1, a pure water regulator 62 for adjusting the flow rate of pure water flowing in the supply passage 1 is provided. Further, on the downstream side of the pure water regulator 62, a pure water flow meter 63 for measuring the flow rate of pure water flowing in the supply passage 1 is provided. Further, similarly, on the downstream side of the heating DIW supply unit 66 of the supply passage 1, a heated pure water regulator 67 for adjusting the flow rate of the heated pure water in the supply passage 1 is provided, and the heated pure water regulator is provided. On the downstream side of 67, a heated pure water flow meter 68 for measuring the flow rate of the heated pure water flowing in the supply passage 1 is provided. Further, on the downstream side of the pure water flow meter 63 and the heated pure water flow meter 68, a pure water supply valve 64 that is openable and closable is provided.

又,如圖1所示,純水流量計63連接於後述控制部50之調整部52,該調整部52連接於純水調節器62。又,同樣地,加熱純水流量計68連接於控制部50之調整部52,該調整部52連接於加熱純水調節器67。Moreover, as shown in FIG. 1, the pure water flow meter 63 is connected to the adjustment part 52 of the control part 50 mentioned later, and this adjustment part 52 is connected to the pure water regulator 62. Further, similarly, the heated pure water flow meter 68 is connected to the adjustment unit 52 of the control unit 50, and the adjustment unit 52 is connected to the heated pure water regulator 67.

又,供給通道1之中,化學藥品溶液供給通道6(氫氟酸供給通道25、鹽酸供給通道35及NH4 OH供給通道45)所連結之連結部位25a、35a、45a之下游側,設置有測定經為溶劑之純水稀釋之化學藥品溶液之導電率的測定部10。Further, in the supply passage 1, the downstream side of the connection portions 25a, 35a, 45a to which the chemical solution supply passage 6 (the hydrofluoric acid supply passage 25, the hydrochloric acid supply passage 35, and the NH 4 OH supply passage 45) are connected is provided. The measuring unit 10 for measuring the conductivity of the chemical solution diluted with the pure water of the solvent is measured.

又,如圖1所示,於測定部10,連接著計算部51,該計算部51依據測定部10測定之導電率,計算從化學藥品溶液供給部5所供給之化學藥品溶液之濃度。又,於該計算部51連接著調整部52,該調整部52依據計算部51所計算之化學藥品溶液之濃度,將從化學藥品溶液供給部5(氫氟酸供給部21、鹽酸供給部31及NH4 OH供給部41)供給之化學藥品溶液量使用調節器(氫氟酸調節器22、鹽酸調節器32及NH4 OH調節器42)調整。又,該等計算部51及調整部52,構成控制部50。Further, as shown in FIG. 1, the measurement unit 10 is connected to the measurement unit 10, and the calculation unit 51 calculates the concentration of the chemical solution supplied from the chemical solution supply unit 5 based on the conductivity measured by the measurement unit 10. Further, the calculation unit 51 is connected to the adjustment unit 52, and the adjustment unit 52 is supplied from the chemical solution supply unit 5 (the hydrofluoric acid supply unit 21 and the hydrochloric acid supply unit 31 in accordance with the concentration of the chemical solution calculated by the calculation unit 51. The amount of the chemical solution supplied to the NH 4 OH supply unit 41) is adjusted using a regulator (a hydrofluoric acid regulator 22, a hydrochloric acid regulator 32, and an NH 4 OH regulator 42). Further, the calculation unit 51 and the adjustment unit 52 constitute the control unit 50.

又,如圖1所示,供給通道1之中,測定部10所設置之測定部位10a之下游側之連結部位3a,連結著過氧化氫水供給部(追加化學藥品溶液供給部)11,該過氧化氫水供給部(追加化學藥品溶液供給部)11經由追加化學藥品溶液供給通道3而供給:與從化學藥品溶液供給部5供給之化學藥品溶液均相異之過氧化氫(追加化學藥品溶液)。Further, as shown in FIG. 1, in the supply passage 1, the connection portion 3a on the downstream side of the measurement site 10a provided in the measurement unit 10 is connected to a hydrogen peroxide water supply unit (additional chemical solution supply unit) 11, which The hydrogen peroxide water supply unit (additional chemical solution supply unit) 11 supplies hydrogen peroxide (additional chemicals) different from the chemical solution supplied from the chemical solution supply unit 5 via the additional chemical solution supply channel 3 Solution).

又,如圖1所示,於追加化學藥品溶液供給通道3,設置有過氧化氫水調節器12,該過氧化氫水調節器12調整流動於追加化學藥品溶液供給通道3內之過氧化氫之流量。又,該過氧化氫水調節器12之下游側,設置有過氧化氫水流量計13,其測定流動於追加化學藥品溶液供給通道3內之過氧化氫之流量。又,過氧化氫水流量計13連接於控制部50之調整部52,於該調整部52,連接著過氧化氫水調節器12。Further, as shown in FIG. 1, a hydrogen peroxide water regulator 12 is provided in the additional chemical solution supply passage 3, and the hydrogen peroxide water regulator 12 adjusts hydrogen peroxide flowing in the additional chemical solution supply passage 3. Traffic. Further, on the downstream side of the hydrogen peroxide water regulator 12, a hydrogen peroxide water flow meter 13 for measuring the flow rate of hydrogen peroxide flowing in the additional chemical solution supply passage 3 is provided. Further, the hydrogen peroxide water flow meter 13 is connected to the adjustment unit 52 of the control unit 50, and the hydrogen peroxide water regulator 12 is connected to the adjustment unit 52.

又,如圖1所示,過氧化氫水供給部11與過氧化氫水調節器12之間,連結著過氧化氫水儲藏槽17。並且,藉由打開第一過氧化氫水供給閥15、關閉第二過氧化氫水供給閥16,能從過氧化氫水供給部11對於過氧化氫水儲藏槽17供給過氧化氫,另外,藉打開第二過氧化氫水供給閥16、關閉第一過氧化氫水供給閥15,能將貯留在過氧化氫水儲藏槽17之過氧化氫水朝向基板處理裝置供給。Moreover, as shown in FIG. 1, the hydrogen peroxide water storage tank 17 is connected between the hydrogen peroxide water supply part 11 and the hydrogen peroxide water regulator 12. Further, by opening the first hydrogen peroxide water supply valve 15 and closing the second hydrogen peroxide water supply valve 16, hydrogen peroxide can be supplied from the hydrogen peroxide water supply unit 11 to the hydrogen peroxide water storage tank 17, and By opening the second hydrogen peroxide water supply valve 16 and closing the first hydrogen peroxide water supply valve 15, the hydrogen peroxide water stored in the hydrogen peroxide water storage tank 17 can be supplied to the substrate processing apparatus.

又,於過氧化氫水儲藏槽17,連接著氮氣供給部71,其經由氮氣供給通道79,對於儲藏在該過氧化氫水儲藏槽17內之過氧化氫施加既定壓力。又,於氮氣供給部71與過氧化氫水儲藏槽17之間之氮氣供給通道79,設置有調整從氮氣供給部71供給之氮氣量之氮氣調節器72。Further, a hydrogen gas supply unit 71 is connected to the hydrogen peroxide water storage tank 17, and a predetermined pressure is applied to the hydrogen peroxide stored in the hydrogen peroxide water storage tank 17 via the nitrogen gas supply passage 79. Further, a nitrogen gas regulator 72 for adjusting the amount of nitrogen gas supplied from the nitrogen gas supply unit 71 is provided in the nitrogen gas supply passage 79 between the nitrogen gas supply unit 71 and the hydrogen peroxide water storage tank 17.

又,如圖1所示,於氮氣調節器72之下游側,設置有:氮氣供給閥75,用於將氮氣對於過氧化氫水儲藏槽17供給;及氮氣排出閥76,用於將氮氣排出到外部。又,氮氣排出閥76,連通於將氮氣往外部排出之排出口(未圖示)。Further, as shown in Fig. 1, on the downstream side of the nitrogen regulator 72, a nitrogen supply valve 75 for supplying nitrogen gas to the hydrogen peroxide water storage tank 17 and a nitrogen gas discharge valve 76 for discharging nitrogen gas are provided. To the outside. Further, the nitrogen gas discharge valve 76 communicates with a discharge port (not shown) that discharges nitrogen gas to the outside.

並且,對於過氧化氫水儲藏槽17供給氮氣而將過氧化氫水儲藏槽17內之過氧化氫對於供給通道1供給之情形,打開氮氣供給閥75、關閉氮氣排出閥76。又,此時,第一過氧化氫水供給閥15關閉、第二過氧化氫水供給閥16與過氧化氫水供給閥14打開。Further, when nitrogen gas is supplied to the hydrogen peroxide water storage tank 17, and hydrogen peroxide in the hydrogen peroxide water storage tank 17 is supplied to the supply passage 1, the nitrogen gas supply valve 75 is opened and the nitrogen gas discharge valve 76 is closed. Further, at this time, the first hydrogen peroxide water supply valve 15 is closed, and the second hydrogen peroxide water supply valve 16 and the hydrogen peroxide water supply valve 14 are opened.

另一方面,從過氧化氫水儲藏槽17將氮氣排出而對於過氧化氫水儲藏槽17內供給來自追加化學藥品溶液供給部11之過氧化氫之情形,氮氣供給閥75關閉、氮氣排出閥76打開。又,此時,第一過氧化氫水供給閥15打開、第二過氧化氫水供給閥16關閉。On the other hand, when nitrogen gas is discharged from the hydrogen peroxide water storage tank 17, and hydrogen peroxide from the additional chemical solution supply unit 11 is supplied into the hydrogen peroxide water storage tank 17, the nitrogen gas supply valve 75 is closed and the nitrogen gas discharge valve is closed. 76 opens. Further, at this time, the first hydrogen peroxide water supply valve 15 is opened and the second hydrogen peroxide water supply valve 16 is closed.

又,供給通道1之中,化學藥品溶液供給通道6所連結之連結部位25a、35a、45a與測定部10所設置之測定部位10a之間,設置有將溶劑與化學藥品溶液混合均勻之如靜態混合器之濃度均勻管(濃度均勻化部)90。Further, in the supply passage 1, between the connection portions 25a, 35a, and 45a to which the chemical solution supply passage 6 is connected and the measurement portion 10a provided in the measurement unit 10, a solvent and a chemical solution are uniformly mixed as static. The concentration of the mixer is uniform (concentration equalization unit) 90.

其次,敘述由此種構成而得之本實施形態之作用。Next, the action of this embodiment obtained by such a configuration will be described.

首先,清洗液有時使用以純水稀釋成較低濃度之NH4 OH時(例如、NH4 OH:純水=1:100),對此加以說明。First, the cleaning liquid is sometimes used when it is diluted with pure water to a lower concentration of NH 4 OH (for example, NH 4 OH: pure water = 1:100).

首先,打開純水供給閥64,對於供給通道1供給為溶劑之純水(溶劑供給步驟)。此時,利用純水流量計63測定流動於供給通道1內之純水之流量,同時,依據所測定之純水流量,依照來自於調整部52之指示,以純水調節器62調整流動於供給通道1內之純水流量。又,同樣地,以加熱純水流量計68,測定流動於供給通道1內之經加熱純水之流量,同時,依據所測定之經加熱純水之流量,依照來自於調整部52之指示,以加熱純水調節器67調整流動於供給通道1內之經加熱純水之流量,同時,調整流動於供給通道1內之純水(從DIW供給部61供給之純水與從加熱DIW供給部供給之經加熱之純水的混合液)之溫度。First, the pure water supply valve 64 is opened, and pure water which is a solvent is supplied to the supply passage 1 (solvent supply step). At this time, the flow rate of the pure water flowing in the supply passage 1 is measured by the pure water flow meter 63, and the flow is adjusted by the pure water regulator 62 in accordance with the instruction from the adjustment unit 52 in accordance with the measured pure water flow rate. Supply pure water flow in channel 1. Further, similarly, the flow rate of the heated pure water flowing in the supply passage 1 is measured by heating the pure water flow meter 68, and in accordance with the measured flow rate of the heated pure water, in accordance with an instruction from the adjustment unit 52, The flow rate of the heated pure water flowing in the supply passage 1 is adjusted by the heated pure water regulator 67, and at the same time, the pure water flowing in the supply passage 1 is adjusted (the pure water supplied from the DIW supply unit 61 and the supplied from the DIW supply unit) The temperature of the mixture of heated pure water supplied).

其次,打開NH4 OH供給閥44,經由NH4 OH供給通道45將化學藥品溶液NH4 OH供給到供給通道1(化學藥品溶液供給步驟)。Next, the NH 4 OH supply valve 44 is opened, and the chemical solution NH 4 OH is supplied to the supply passage 1 via the NH 4 OH supply passage 45 (chemical solution supply step).

其次,NH4 OH與純水同時到達如靜態混合器之濃度均勻管90,藉該濃度均勻管90,與純水混合而成均勻(均勻化步驟)。Next, NH 4 OH and pure water simultaneously reach a concentration uniform tube 90 such as a static mixer, and the uniform tube 90 is mixed with pure water to form a uniform (homogeneization step).

其次,以測定部10,測定經純水稀釋之NH4 OH之導電率(測定步驟)。在此,如上所述,以濃度均勻管90,混合NH4 OH與純水使成均勻,因此,測定部10,能以良好精度測定經純水稀釋之NH4 OH之導電率。又,依此方式,由於NH4OH與純水混合均勻,因此,測定部10,能將測定結果對後述計算部51迅速提供,較佳為,設置測定部10,該測定部10能在經純水稀釋之NH4 OH通過後0.5秒以內,將導電率之測定結果對於計算部51提供。Next, the conductivity of the NH 4 OH diluted with pure water is measured by the measuring unit 10 (measurement step). Here, as described above, the NH 4 OH and the pure water are uniformly mixed by the uniform concentration tube 90. Therefore, the measurement unit 10 can measure the conductivity of the NH 4 OH diluted with pure water with good precision. In this way, since the measurement unit 10 can quickly provide the measurement result to the calculation unit 51 to be described later, it is preferable to provide the measurement unit 10, which can be in pure water. The measurement result of the conductivity was supplied to the calculation unit 51 within 0.5 second after the passage of the diluted NH 4 OH.

其次,利用控制部50之計算部51,依據測定部10所測定之導電率,計算經稀釋之NH4 OH之濃度。之後,藉由該計算部51,利用經計算之稀釋後之NH4 OH之濃度,與從純水流量計63與加熱純水流量計68導出之純水之流量,計算從NH4OH供給部41供給之NH4 OH之濃度(計算步驟)。Next, the calculation unit 51 of the control unit 50 calculates the concentration of the diluted NH 4 OH based on the conductivity measured by the measurement unit 10. Thereafter, the calculation unit 51 calculates the flow rate from the NH4OH supply unit 41 using the calculated concentration of the diluted NH 4 OH and the flow rate of the pure water derived from the pure water flow meter 63 and the heated pure water flow meter 68. The concentration of NH 4 OH (calculation step).

依此方式,清洗液使用以純水稀釋成較低濃度之NH4 OH之情形,從NH4 OH供給部41供給之NH4 OH量非常少。因此,例如即使在供給通道45上配置流量計,亦無法準確地測定其流量。因此,無法知道經純水稀釋後之NH4 OH之準確濃度。相對於此,依照本實施形態,係將NH4 OH以純水稀釋,而將容量增大之化學藥品溶液(稀釋後之NH4 OH)之濃度使用測定導電率之測定部10來測定。因此,依此方式,即使從NH4 OH供給部41供給之NH4 OH量非常少,亦能準確測定從NH4 OH供給部41供給之NH4 OH之量。In this manner, the cleaning liquid diluted with pure water using lower concentrations of the case of NH 4 OH, NH supplied from the supply portion of NH 4 OH 41 4 OH in very small amounts. Therefore, for example, even if the flow meter is disposed on the supply passage 45, the flow rate cannot be accurately measured. Therefore, the exact concentration of NH 4 OH diluted with pure water cannot be known. On the other hand, according to the present embodiment, the NH 4 OH is diluted with pure water, and the concentration of the chemical solution (diluted NH 4 OH) having an increased capacity is measured using the measuring unit 10 for measuring the conductivity. Thus, in this manner, even if the supply of the NH 4 OH NH 4 OH feed portion 41 in very small amounts, can also accurately determine the amount of NH 4 OH NH 4 OH supplied from the supply portion 41.

又,測定部10,並非測定稀釋後之NH4 OH之光穿透率(NH4 OH之吸光度),而測定其導電率。因此,相較於測定光之穿透率之情形,能迅速地檢知NH4 OH之濃度。Further, the measurement unit 10 does not measure the light transmittance (absorbance of NH 4 OH) of the diluted NH 4 OH, and measures the conductivity. Therefore, the concentration of NH 4 OH can be quickly detected as compared with the case of measuring the transmittance of light.

如上所述,若利用計算部51計算從NH4 OH供給部41供給之NH4 OH之濃度,則藉由控制部50之調整部52,依據所計算之NH4 OH之濃度,調整NH4 OH調節器42。因此,可以隨時調整從NH4 OH供給部41對於供給通道1供給之NH4 OH濃度,能使該NH4 OH之濃度迅速成為適當濃度。As described above, when using the calculation unit 51 calculates the concentration of NH 4 OH NH 4 OH feed the supply unit 41, is calculated by the control unit NH 50 of the adjusting unit 52, depending on the concentration of 4 OH, NH 4 OH to adjust Regulator 42. Therefore, the NH 4 OH concentration supplied from the NH 4 OH supply unit 41 to the supply channel 1 can be adjusted at any time, and the concentration of the NH 4 OH can be quickly brought to an appropriate concentration.

其次,將經純水稀釋之NH4 OH,供給到處理部80之處理液供給部83與背面處理液供給部84(基板處理步驟)。在此,將依據如上所述準確計算之NH4 OH濃度,調整為適當濃度之NH4 OH,對於晶圓W供給,因此,能以良好精度處理晶圓W。Next, NH 4 OH diluted with pure water is supplied to the treatment liquid supply unit 83 and the back surface treatment liquid supply unit 84 of the treatment unit 80 (substrate treatment step). Here, the NH 4 OH which is accurately calculated as described above is adjusted to an appropriate concentration of NH 4 OH to supply the wafer W, so that the wafer W can be processed with good precision.

(利用氨過氧化氫水(SC1)之處理)其次,說明清洗液使用含較濃濃度之NH4 OH(例如,氨水:過氧化氫水:水=1:1:5(容量比)而產生)的氨過氧化氫水(SC1),清洗進行晶圓W之情形。(Using ammonia hydrogen peroxide water (SC1) treatment), secondly, the cleaning solution is produced using a concentrated concentration of NH 4 OH (for example, ammonia water: hydrogen peroxide water: water = 1:1:5 (capacity ratio)) Ammonia hydrogen peroxide water (SC1) is used to clean the wafer W.

首先,打開純水供給閥64,對於供給通道1供給為溶劑之純水(溶劑供給步驟)。此時,利用純水流量計63測定流動於供給通道1內之純水之流量,同時,依據測定之純水流量,依照來自於調整部52之指示,利用純水調節器62調整在供給通道1內流動之純水之流量。又,同樣地,利用加熱純水流量計68測定在供給通道1內流動之經加熱純水之流量,同時,依據所測定之經加熱純水之流量,依照來自於調整部52之指示,利用加熱純水調節器67調整在供給通道1內流動之經加熱純水之流量,同時,調整在供給通道1內流動之純水(從DIW供給部61供給之純水與從加熱DIW供給部供給之經加熱純水之混合液)之溫度。First, the pure water supply valve 64 is opened, and pure water which is a solvent is supplied to the supply passage 1 (solvent supply step). At this time, the flow rate of the pure water flowing in the supply passage 1 is measured by the pure water flow meter 63, and the supply passage is adjusted by the pure water regulator 62 in accordance with the instruction from the adjustment unit 52 in accordance with the measured pure water flow rate. The flow of pure water flowing in 1 . Further, similarly, the flow rate of the heated pure water flowing in the supply passage 1 is measured by the heated pure water flow meter 68, and the flow rate of the heated pure water measured is used in accordance with an instruction from the adjustment unit 52. The heated pure water regulator 67 adjusts the flow rate of the heated pure water flowing in the supply passage 1, and at the same time, adjusts the pure water flowing in the supply passage 1 (pure water supplied from the DIW supply unit 61 and supplied from the heated DIW supply unit) The temperature of the mixture of heated pure water).

其次,打開NH4 OH供給閥44,經由NH4 OH供給通道45對於供給通道1供給化學藥品溶液NH4 OH(化學藥品溶液供給步驟)。Next, the NH 4 OH supply valve 44 is opened, and the chemical solution NH 4 OH is supplied to the supply channel 1 via the NH 4 OH supply passage 45 (chemical solution supply step).

此時,打開第二過氧化氫水供給閥16與過氧化氫水供給閥14,將儲留在過氧化氫水儲藏槽17之過氧化氫水,供給到供給通道1(追加化學藥品溶液供給步驟)。At this time, the second hydrogen peroxide water supply valve 16 and the hydrogen peroxide water supply valve 14 are opened, and the hydrogen peroxide water stored in the hydrogen peroxide water storage tank 17 is supplied to the supply channel 1 (additional chemical solution supply) step).

又,此時,氮氣供給閥75雖打開,但氮氣排出閥76關閉,利用從氮氣供給部71供給之氮氣之壓力,對於儲留在過氧化氫水儲藏槽17內之過氧化氫,施加既定壓力。依此方式,在容量較小之過氧化氫水儲藏槽17內儲藏過氧化氫水,並對於該過氧化氫水施加氮氣所致壓力而供給過氧化氫水,因此能輕易調整供給之過氧化氫水量。Further, at this time, the nitrogen gas supply valve 75 is opened, but the nitrogen gas discharge valve 76 is closed, and the hydrogen peroxide supplied from the hydrogen gas supply unit 17 is applied to the hydrogen peroxide stored in the hydrogen peroxide water storage tank 17 by the pressure of the nitrogen gas supplied from the nitrogen gas supply unit 71. pressure. In this manner, hydrogen peroxide water is stored in the hydrogen peroxide water storage tank 17 having a small capacity, and hydrogen peroxide water is supplied to the hydrogen peroxide water by applying a pressure of nitrogen gas, so that the peroxidation of the supply can be easily adjusted. The amount of hydrogen water.

其次,利用測定部10,測定經純水稀釋之NH4 OH之導電率(測定步驟)。其次,利用控制部50之計算部51,依據測定部10所測定之導電率,計算經稀釋之NH4 OH之濃度。之後,藉由此計算部51,利用經計算之稀釋後之NH4 OH濃度,及從純水流量計63及加熱純水流量計68導出之純水流量,計算從NH4 OH供給部41供給之NH4 OH濃度(計算步驟)。Next, the conductivity of the NH 4 OH diluted with pure water is measured by the measuring unit 10 (measurement step). Next, the calculation unit 51 of the control unit 50 calculates the concentration of the diluted NH 4 OH based on the conductivity measured by the measurement unit 10. Thereafter, the calculation unit 51 calculates the supply of the NH 4 OH supply unit 41 using the calculated diluted NH 4 OH concentration and the pure water flow rate derived from the pure water flow meter 63 and the heated pure water flow meter 68. NH 4 OH concentration (calculation step).

依此方式,依照本實施形態,能藉由測定部10,於不添加過氧化氫之狀態,檢測從NH4 OH供給部41供給之NH4 OH之導電率。因此,能測定非加入過氧化氫所致導電效果,而測定僅來自於因NH4 OH所致導電效果之導電率,能準確計算NH4 OH之濃度。In this manner, according to the present embodiment, the measurement unit 10 can be, without adding to the hydrogen peroxide over state, detecting NH NH 4 OH supplied from the supply portion 41 of the conductivity 4 OH. Thus, the measurement can be added to the non-conductive effects induced by hydrogen peroxide, measured from only due to NH 4 OH-induced effect of the conductivity of the conductive, can accurately calculate the concentration of NH 4 OH.

又,如以往,於混合NH4 OH及過氧化氫之狀態測定導電率之情形,從NH4 OH供給部供給之NH4 OH量若為少量,則愈少時,來自於過氧化氫之導電效果貢獻愈大。因此,如本實施形態所示,能夠僅測定來自於NH4 OH所致導電效果之導電率,係指從NH4 OH供給部供給之NH4 OH之供給量如為少量則愈少,相較於習知方法,愈為有益者。Further, as in the conventional case where the electrical conductivity, and NH 4 OH in a mixed state over the hydrogen peroxide was measured from the amount of NH 4 OH 4 OH NH supply portion when a small amount of, the more small, from the hydrogen peroxide through the conductive The greater the contribution of the effect. Accordingly, as shown in the present embodiment, can be determined only from 4 OH NH2 induced effect of the conductivity of the conductive, refers to the amount of supply of 4 OH NH 4 OH NH supply portion is a small amount of the less as compared In the conventional method, the more beneficial.

又,測定部10,並不測定稀釋後之NH4 OH之光穿透率(NH4 OH之吸光度),而測定其導電率。因此,相較於測定光穿透率之情形,能迅速檢知NH4 OH之濃度。Further, the measuring unit 10 does not measure the light transmittance (absorbance of NH 4 OH) of the diluted NH 4 OH, and measures the conductivity. Therefore, the concentration of NH 4 OH can be quickly detected as compared with the case of measuring the light transmittance.

如上所述,若利用計算部51計算從NH4 OH供給部41供給之NH4 OH濃度,則利用控制部50之調整部52,依據計算之NH4 OH濃度,調整NH4 OH調節器42。因此,可以隨時調整從NH4 OH供給部41對供給通道1供給之NH4 OH濃度,能使該NH4 OH之濃度迅速成為適當濃度。As described above, when the calculation unit 51 calculates the NH 4 OH concentration supplied from the NH 4 OH supply unit 41, the adjustment unit 52 of the control unit 50 adjusts the NH 4 OH regulator 42 based on the calculated NH 4 OH concentration. Therefore, the NH 4 OH concentration supplied from the NH 4 OH supply unit 41 to the supply channel 1 can be adjusted at any time, and the concentration of the NH 4 OH can be quickly brought to an appropriate concentration.

另一方面,從過氧化氫水儲藏槽17放出之過氧化氫水,如上所述於測定部10測定稀釋後之NH4 OH之濃度,於計算部51計算從NH4 OH供給部41供給之NH4 OH濃度,並於調整部52調整NH4 OH之供給量之期間,利用過氧化氫水流量計13測定在過氧化氫水供給通道3內流動之流量,同時依據經測定之過氧化氫水之流量,依照來自於調整部52之指示,將該流量以過氧化氫水調節器12進行調整。On the other hand, the hydrogen peroxide water discharged from the hydrogen peroxide water storage tank 17 is used to measure the concentration of the diluted NH 4 OH in the measuring unit 10 as described above, and the calculation unit 51 calculates the supply from the NH 4 OH supply unit 41. NH 4 OH concentration, and the adjusting portion 52 to adjust the supply of NH 4 OH during the amount of use of hydrogen peroxide in a flow meter 13 measuring the flow through the flow 3 of hydrogen peroxide water supply passage, while the basis of hydrogen peroxide was determined through The flow rate of water is adjusted by the hydrogen peroxide water regulator 12 in accordance with an instruction from the adjustment unit 52.

其次,在如上所述稀釋成適當濃度之NH4 OH,混合如上所述經流量調整之過氧化氫水,於供給通道1內,產生為處理液之氨過氧化氫水(SC1)。Next, the NH 4 OH is diluted to an appropriate concentration as described above, and the flow-adjusted hydrogen peroxide water as described above is mixed, and in the supply channel 1, ammonia hydrogen peroxide water (SC1) as a treatment liquid is produced.

並且,將此氨過氧化氫水(SC1)供給到處理部80之處理液供給部83及背面處理液供給部84(基板處理步驟)。在此,由於依據如上所述經準確計算之NH4 OH濃度,將調整成適當濃度之氨過氧化氫水(SC1),對於晶圓W供給,因此能以良好精度處理晶圓W。Then, the ammonia hydrogen peroxide water (SC1) is supplied to the processing liquid supply unit 83 and the back surface processing liquid supply unit 84 of the processing unit 80 (substrate processing step). Here, since the ammonia hydrogen peroxide water (SC1) adjusted to an appropriate concentration is supplied to the wafer W in accordance with the accurately calculated NH 4 OH concentration as described above, the wafer W can be processed with good precision.

亦即,於先前所說明之從NH4 OH供給部41供給之NH4 OH量非常少之處理時,將NH4 OH與過氧化氫與純水混合之化學藥品溶液量較多之處理時,都能準確地測定處理液濃度。That is, at the time of the previously processed very small amount of NH 4 OH supplied from the supply portion 41 NH 4 OH description, when there are more chemical processing amount 4 OH mixed solution of hydrogen peroxide and water with NH, The concentration of the treatment liquid can be accurately determined.

(利用鹽酸過氧化氫水(SC2)之處理)使用鹽酸過氧化氫水(SC2)作為處理液清洗晶圓W時,與利用上述氨過氧化氫水(SC1)之處理大致相同。亦即,將開閉NH4 OH供給閥44改為開閉鹽酸供給閥34即可,其他之點,與利用氨過氧化氫水(SC1)之處理大致相同。因此,詳細說明省略。(Treatment by Hydrogen Peroxide Water (SC2)) When the wafer W is washed with hydrogen peroxide water (SC2) as a treatment liquid, it is substantially the same as the treatment using the above-described ammonia hydrogen peroxide water (SC1). In other words, the opening and closing of the NH 4 OH supply valve 44 may be changed to the opening and closing of the hydrochloric acid supply valve 34, and the other points are substantially the same as the treatment using the ammonia hydrogen peroxide water (SC1). Therefore, the detailed description is omitted.

依照本實施形態,係使用稀釋成較低濃度之鹽酸作為清洗液,即使從鹽酸供給部31供給之鹽酸量非常少,亦能將以純水稀釋鹽酸而容量增大之化學藥品溶液(稀釋後之鹽酸)之濃度,使用測定導電率之測定部10進行測定。因此,能準確地測定從鹽酸供給部31供給之鹽酸之量。According to the present embodiment, hydrochloric acid diluted to a lower concentration is used as the cleaning liquid, and even if the amount of hydrochloric acid supplied from the hydrochloric acid supply unit 31 is extremely small, the chemical solution in which the capacity is increased by diluting hydrochloric acid with pure water can be used (after dilution) The concentration of hydrochloric acid was measured using the measuring unit 10 for measuring the conductivity. Therefore, the amount of hydrochloric acid supplied from the hydrochloric acid supply unit 31 can be accurately measured.

又,即使使用鹽酸過氧化氫水(SC2)清洗晶圓W之情形,可在不加入過氧化氫之狀態,檢測出從鹽酸供給部31供給之鹽酸之導電率。因此,能不加入過氧化氫所致導電效果,而檢測出僅由鹽酸所致導電效果由來之導電率,能準確地計算鹽酸之濃度。其結果,能對於處理部80供給準確量之鹽酸,將晶圓W以由準確鹽酸濃度所構成之鹽酸過氧化氫水(SC2)進行處理。Moreover, even when the wafer W is washed with hydrogen peroxide water (SC2), the conductivity of hydrochloric acid supplied from the hydrochloric acid supply unit 31 can be detected without adding hydrogen peroxide. Therefore, the conductivity of the conductive effect caused by only hydrochloric acid can be detected without adding the conductivity effect by hydrogen peroxide, and the concentration of hydrochloric acid can be accurately calculated. As a result, an accurate amount of hydrochloric acid can be supplied to the treatment unit 80, and the wafer W can be treated with hydrochloric acid hydrogen peroxide (SC2) composed of an accurate hydrochloric acid concentration.

又,測定部10並不測定稀釋後之鹽酸之光穿透率(鹽酸之吸光度),而測定其導電率。因此,相較於測定光穿透率之情形,能迅速地檢知鹽酸之濃度。Further, the measuring unit 10 does not measure the light transmittance (absorbance of hydrochloric acid) of the diluted hydrochloric acid, and measures the electrical conductivity. Therefore, the concentration of hydrochloric acid can be quickly detected as compared with the case of measuring the light transmittance.

(利用稀氫氟酸之處理)(treatment with dilute hydrofluoric acid)

使用稀氫氟酸作為處理液清洗晶圓W之情形,除了不使用過氧化氫水以外,與上述利用氨過氧化氫水(SC1)之處理大致相同。亦即,將開閉NH4 OH供給閥44與過氧化氫水供給閥14,改為開閉氫氟酸供給閥24即可,其他之點,與利用氨過氧化氫水(SC1)之處理大致相同,因此詳細說明省略。The case where the wafer W is washed using dilute hydrofluoric acid as a treatment liquid is substantially the same as the above treatment using ammonia hydrogen peroxide water (SC1) except that hydrogen peroxide water is not used. In other words, the NH 4 OH supply valve 44 and the hydrogen peroxide water supply valve 14 are opened and closed, and the hydrofluoric acid supply valve 24 can be opened and closed, and the other points are substantially the same as those of the ammonia hydrogen peroxide water (SC1). Therefore, the detailed explanation is omitted.

又,使用稀氫氟酸清洗晶圓W之情形,由於不使用追加化學藥品溶液過氧化氫水,因此經純水稀釋之稀氫氟酸成為處理液。Further, in the case where the wafer W is washed with dilute hydrofluoric acid, since the additional chemical solution hydrogen peroxide water is not used, the diluted hydrofluoric acid diluted with pure water becomes the treatment liquid.

1...供給通道1. . . Supply channel

3...過氧化氫水供給通道3. . . Hydrogen peroxide water supply channel

3a...連結部位3a. . . Joint site

5...化學藥品溶液供給部5. . . Chemical solution supply department

6...化學藥品溶液供給通道6. . . Chemical solution supply channel

7...溶劑供給部7. . . Solvent supply unit

10...測定部10. . . Measurement department

10a...測定部位10a. . . Measuring site

11...追加化學藥品溶液供給部11. . . Additional chemical solution supply department

12...過氧化氫水調節器12. . . Hydrogen peroxide water regulator

13...過氧化氫水流量計13. . . Hydrogen peroxide water flow meter

14...過氧化氫水供給閥14. . . Hydrogen peroxide water supply valve

15...第一過氧化氫水供給閥15. . . First hydrogen peroxide water supply valve

16...第二過氧化氫水供給閥16. . . Second hydrogen peroxide water supply valve

17...過氧化氫水儲藏槽17. . . Hydrogen peroxide water storage tank

21...氫氟酸供給部twenty one. . . Hydrofluoric acid supply

22...氫氟酸調節器twenty two. . . Hydrofluoric acid regulator

24...氫氟酸供給閥twenty four. . . Hydrofluoric acid supply valve

25...氫氟酸供給通道25. . . Hydrofluoric acid supply channel

25a...連結部位25a. . . Joint site

31...鹽酸供給部31. . . Hydrochloric acid supply department

32...鹽酸調節器32. . . Hydrochloric acid regulator

34...鹽酸供給閥34. . . Hydrochloric acid supply valve

35...鹽酸供給通道35. . . Hydrochloric acid supply channel

35a...連結部位35a. . . Joint site

41...NH4 OH供給部41. . . NH 4 OH supply department

42...NH4 OH調節器42. . . NH 4 OH regulator

44...NH4 OH供給閥44. . . NH 4 OH supply valve

45...NH4 OH供給通道45. . . NH 4 OH supply channel

45a...連結部位45a. . . Joint site

50...控制部50. . . Control department

51...計算部51. . . Computing department

52...調整部52. . . Adjustment department

61...DIW供給部61. . . DIW Supply Department

62...純水調節器62. . . Pure water regulator

63...純水流量計63. . . Pure water flow meter

64...純水供給閥64. . . Pure water supply valve

66...加熱DIW供給部66. . . Heating DIW supply department

66a...加熱部66a. . . Heating department

67...加熱純水調節器67. . . Heating pure water regulator

68...加熱純水流量計68. . . Heating pure water flow meter

71...氮氣供給部71. . . Nitrogen supply unit

72...氮氣調節器72. . . Nitrogen regulator

75...氮氣供給閥75. . . Nitrogen supply valve

76...氮氣排出閥76. . . Nitrogen discharge valve

79...氮氣供給通道79. . . Nitrogen supply channel

80...處理部80. . . Processing department

81...殼體81. . . case

82...固持部82. . . Holding unit

83...處理液供給部83. . . Treatment liquid supply unit

84...背面處理液供給部84. . . Back treatment liquid supply unit

90...濃度均勻管(濃度均勻化部)90. . . Uniform concentration tube (concentration equalization section)

W...晶圓(被處理體)W. . . Wafer (processed object)

圖1顯示本發明實施形態之液處理裝置之概略構成圖。Fig. 1 is a view showing the schematic configuration of a liquid processing apparatus according to an embodiment of the present invention.

1...供給通道1. . . Supply channel

3...過氧化氫水供給通道3. . . Hydrogen peroxide water supply channel

3a...連結部位3a. . . Joint site

5...化學藥品溶液供給部5. . . Chemical solution supply department

6...化學藥品溶液供給通道6. . . Chemical solution supply channel

7...溶劑供給部7. . . Solvent supply unit

10...測定部10. . . Measurement department

10a...測定部位10a. . . Measuring site

11...追加化學藥品溶液供給部11. . . Additional chemical solution supply department

12...過氧化氫水調節器12. . . Hydrogen peroxide water regulator

13...過氧化氫水流量計13. . . Hydrogen peroxide water flow meter

14...過氧化氫水供給閥14. . . Hydrogen peroxide water supply valve

15...第一過氧化氫水供給閥15. . . First hydrogen peroxide water supply valve

16...第二過氧化氫水供給閥16. . . Second hydrogen peroxide water supply valve

17...過氧化氫水儲藏槽17. . . Hydrogen peroxide water storage tank

21...氫氟酸供給部twenty one. . . Hydrofluoric acid supply

22...氫氟酸調節器twenty two. . . Hydrofluoric acid regulator

24...氫氟酸供給閥twenty four. . . Hydrofluoric acid supply valve

25...氫氟酸供給通道25. . . Hydrofluoric acid supply channel

25a...連結部位25a. . . Joint site

31...鹽酸供給部31. . . Hydrochloric acid supply department

32...鹽酸調節器32. . . Hydrochloric acid regulator

34...鹽酸供給閥34. . . Hydrochloric acid supply valve

35...鹽酸供給通道35. . . Hydrochloric acid supply channel

35a...連結部位35a. . . Joint site

41...NH4 OH供給部41. . . NH 4 OH supply department

42...NH4 OH調節器42. . . NH 4 OH regulator

44...NH4 OH供給閥44. . . NH 4 OH supply valve

45...NH4 OH供給通道45. . . NH 4 OH supply channel

45a...連結部位45a. . . Joint site

50...控制部50. . . Control department

51...計算部51. . . Computing department

52...調整部52. . . Adjustment department

61...DIW供給部61. . . DIW Supply Department

62...純水調節器62. . . Pure water regulator

63...純水流量計63. . . Pure water flow meter

64...純水供給閥64. . . Pure water supply valve

66...加熱DIW供給部66. . . Heating DIW supply department

66a...加熱部66a. . . Heating department

67...加熱純水調節器67. . . Heating pure water regulator

68...加熱純水流量計68. . . Heating pure water flow meter

71...氮氣供給部71. . . Nitrogen supply unit

72...氮氣調節器72. . . Nitrogen regulator

75...氮氣供給閥75. . . Nitrogen supply valve

76...氮氣排出閥76. . . Nitrogen discharge valve

79...氮氣供給通道79. . . Nitrogen supply channel

80...處理部80. . . Processing department

81...殼體81. . . case

82...固持部82. . . Holding unit

83...處理液供給部83. . . Treatment liquid supply unit

84...背面處理液供給部84. . . Back treatment liquid supply unit

90...濃度均勻管(濃度均勻化部)90. . . Uniform concentration tube (concentration equalization section)

W...晶圓(被處理體)W. . . Wafer (processed object)

Claims (8)

一種液處理裝置,使用以溶劑與化學藥品溶液混合而產生之處理液來處理被處理體;其特徵為包含:處理部,藉由處理液處理被處理體;供給通道,與處理部連結,將處理液引導到該處理部;溶劑供給部,將溶劑供給到供給通道;化學藥品溶液供給部,經由化學藥品溶液供給通道將化學藥品溶液供給到供給通道,並產生經溶劑稀釋之化學藥品溶液;測定部,設於供給通道中的化學藥品溶液供給通道所連結之連結部位之下游側,用以測定經溶劑稀釋之化學藥品溶液之導電率;追加化學藥品溶液供給部,連結於供給通道中的測定部所設置之測定部位之下游側,經由追加化學藥品溶液供給通道而供給與該化學藥品溶液相異之追加化學藥品溶液至該經溶劑稀釋之化學藥品溶液;溶劑流量計,設於供給通道中,該溶劑流量計用以測量流經供給通道之溶劑的流量;追加化學藥品溶液流量計,設於追加化學藥品溶液供給通道中,該追加化學藥品溶液流量計用以僅測量流經追加化學藥品溶液供給通道之追加化學藥品溶液的流量;以及調整部,用以依據由測定部所測定之導電率而調整從化學藥品溶液供給部所供給之化學藥品溶液之量、依據由溶劑流量計所測得之溶劑的流量而調整自溶劑供給部供應至供給通道之溶劑之量、並依據由追加化學藥品溶液流量計所測得之追加化學藥品溶液的流量而調整自追加化學藥品溶液供給部供應至追加化學藥品溶液供給通道之追加化學藥品溶液之量;且將依該追加化學藥品溶液流量計所調整的追加化學藥品溶液供給到:依該測定部及該溶劑流量計所調整的該經溶劑稀釋之化學藥品溶液。 A liquid processing apparatus that processes a target object by using a treatment liquid produced by mixing a solvent and a chemical solution, and includes: a treatment unit that processes the object to be processed by the treatment liquid; and a supply passage that is coupled to the treatment unit; The processing liquid is guided to the processing unit; the solvent supply unit supplies the solvent to the supply channel; the chemical solution supply unit supplies the chemical solution to the supply channel via the chemical solution supply channel, and generates a solvent-diluted chemical solution; The measurement unit is provided on the downstream side of the connection portion to which the chemical solution supply channel in the supply channel is connected, for measuring the conductivity of the solvent solution diluted with the solvent, and the additional chemical solution supply unit is connected to the supply channel. The downstream side of the measurement site provided by the measurement unit supplies an additional chemical solution different from the chemical solution to the chemical solution diluted with the solvent via the additional chemical solution supply channel; the solvent flow meter is provided in the supply channel The solvent flow meter is used to measure the flow of the solvent flowing through the supply passage An additional chemical solution flow meter is provided in the additional chemical solution supply channel for measuring only the flow rate of the additional chemical solution flowing through the additional chemical solution supply channel; and the adjustment unit The amount of the chemical solution supplied from the chemical solution supply unit is adjusted in accordance with the conductivity measured by the measuring unit, and is adjusted from the solvent supply unit to the supply channel based on the flow rate of the solvent measured by the solvent flow meter. The amount of the solvent and the amount of the additional chemical solution supplied from the additional chemical solution supply unit to the additional chemical solution supply channel are adjusted according to the flow rate of the additional chemical solution measured by the additional chemical solution flow meter; The additional chemical solution adjusted by the additional chemical solution flowmeter is supplied to the solvent-diluted chemical solution adjusted by the measurement unit and the solvent flowmeter. 如申請專利範圍第1項之液處理裝置,其中,追加化學藥品溶液供給部供給過氧化氫作為追加化學藥品溶液。 The liquid processing apparatus according to claim 1, wherein the additional chemical solution supply unit supplies hydrogen peroxide as an additional chemical solution. 如申請專利範圍第1或2項之液處理裝置,其中,更包含:濃度均勻化部,設置在供給通道中的化學藥品溶液供給通道所連結之連結部位與測定部所設置之測定部位之間,用以使溶劑與化學藥品溶液混合並使其均勻化。 The liquid processing apparatus according to claim 1 or 2, further comprising: a concentration equalizing unit disposed between the joint portion of the chemical solution supply passage provided in the supply passage and the measurement portion provided by the measuring portion To mix and homogenize the solvent with the chemical solution. 如申請專利範圍第1或2項之液處理裝置,其中,測定部於經溶劑稀釋之化學藥品溶液通過該測定部後0.5秒以內,提供導電率之測定結果。 The liquid processing apparatus according to claim 1 or 2, wherein the measuring unit provides a measurement result of the electrical conductivity within 0.5 second after the chemical solution diluted with the solvent passes through the measuring unit. 一種處理液供給方法,係將由溶劑與化學藥品溶液混合而產生之處理液供給至被處理體;其特徵為包含以下步驟:溶劑供給步驟,對於供給通道供給溶劑;化學藥品溶液供給步驟,對供給通道供給化學藥品溶液,並產生經溶劑稀釋之化學藥品溶液;測定步驟,藉由以測定部來測定經溶劑稀釋之化學藥品溶液之導電率,而測定於該化學藥品溶液供給步驟所供給之化學藥品溶液之濃度;追加化學藥品溶液供給步驟,對於經溶劑稀釋之化學藥品溶液,供給與該化學藥品溶液相異之追加化學藥品溶液而產生處理液;調整步驟,依據於該測定步驟中所測得之導電率,調整於化學藥品溶液供給步驟中所供給之化學藥品溶液之量;溶劑流量測定步驟,以溶劑流量計來測量流經供給通道之溶劑的流量;溶劑流量調整步驟,依據於溶劑流量測定步驟中所測得之溶劑的流量,調整於溶劑供給步驟中所供應之溶劑之量;追加化學藥品溶液流量測定步驟,以追加化學藥品溶液流量計,僅測量於該追加化學藥品溶液供給步驟中所供應之追加化學藥品溶液的流量; 追加化學藥品溶液流量調整步驟,依據於追加化學藥品溶液流量測定步驟中所測得之追加化學藥品溶液的流量,調整於該追加化學藥品溶液供給步驟中所供應之追加化學藥品溶液之量;及基板處理步驟,將該處理液供給至被處理體;且將依該追加化學藥品溶液流量計所調整的追加化學藥品溶液供給到:依該測定部及該溶劑流量計所調整的該經溶劑稀釋之化學藥品溶液。 A processing liquid supply method for supplying a treatment liquid produced by mixing a solvent and a chemical solution to a target object; characterized by comprising the steps of: a solvent supply step of supplying a solvent to a supply channel; and a chemical solution supply step, supplying The channel supplies a chemical solution and generates a solvent-diluted chemical solution; and the measuring step determines the conductivity of the chemical solution diluted by the solvent by measuring the conductivity of the chemical solution diluted by the solvent in the supply step of the chemical solution a concentration of the drug solution; an additional chemical solution supply step, and a chemical solution diluted with the solvent is supplied with an additional chemical solution different from the chemical solution to generate a treatment liquid; and an adjustment step is performed according to the measurement step The conductivity is adjusted to the amount of the chemical solution supplied in the chemical solution supply step; the solvent flow measuring step uses the solvent flow meter to measure the flow rate of the solvent flowing through the supply channel; the solvent flow rate adjusting step is based on the solvent The solvent measured in the flow measurement step The amount is adjusted to the amount of the solvent supplied in the solvent supply step; the chemical solution flow rate measuring step is added, and the chemical solution flow meter is added to measure only the additional chemical solution supplied in the additional chemical solution supply step. flow; The additional chemical solution flow rate adjusting step adjusts the amount of the additional chemical solution supplied in the additional chemical solution supply step based on the flow rate of the additional chemical solution measured in the additional chemical solution flow rate measuring step; a substrate processing step of supplying the treatment liquid to the object to be processed; and supplying an additional chemical solution adjusted according to the additional chemical solution flowmeter to the solvent-diluted by the measurement unit and the solvent flow meter Chemical solution. 如申請專利範圍第5項之處理液供給方法,其中,於追加化學藥品溶液供給步驟中所供應之追加化學藥品溶液為過氧化氫。 The processing liquid supply method according to claim 5, wherein the additional chemical solution supplied in the additional chemical solution supply step is hydrogen peroxide. 如申請專利範圍第5項之處理液供給方法,更包含:均勻化步驟,在化學藥品溶液供給步驟與測定步驟之間,混和溶劑與化學藥品溶液並使其均勻化。 The treatment liquid supply method according to claim 5, further comprising: a homogenization step of mixing and homogenizing the solvent and the chemical solution between the chemical solution supply step and the measurement step. 如申請專利範圍第5項之處理液供給方法,在測定步驟中,於經溶劑稀釋之化學藥品溶液通過一測定部後0.5秒以內,輸出經溶劑稀釋之化學藥品溶液之導電率之測定結果。 According to the method of supplying a treatment liquid according to the fifth aspect of the invention, in the measuring step, the measurement result of the conductivity of the chemical solution diluted with the solvent is output within 0.5 second after the chemical solution diluted with the solvent passes through a measuring unit.
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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5203435B2 (en) * 2010-09-17 2013-06-05 東京エレクトロン株式会社 Liquid processing method, recording medium recording a program for executing the liquid processing method, and liquid processing apparatus
JP6212253B2 (en) * 2012-11-15 2017-10-11 株式会社荏原製作所 Substrate cleaning apparatus and substrate cleaning method
US10780461B2 (en) * 2015-05-15 2020-09-22 Taiwan Semiconductor Manufacturing Co., Ltd Methods for processing substrate in semiconductor fabrication
US10935896B2 (en) * 2016-07-25 2021-03-02 Applied Materials, Inc. Cleaning solution mixing system with ultra-dilute cleaning solution and method of operation thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW447026B (en) * 2000-05-24 2001-07-21 Nagase & Co Ltd Substrate surface treating apparatus
TW550630B (en) * 2000-06-26 2003-09-01 Applied Materials Inc Method and apparatus for wet processing wafers
US6799883B1 (en) * 1999-12-20 2004-10-05 Air Liquide America L.P. Method for continuously blending chemical solutions

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS608040A (en) * 1983-06-27 1985-01-16 Nippon Telegr & Teleph Corp <Ntt> Manufacture of thermo-shrinkable tube
JPS60165560A (en) * 1984-02-08 1985-08-28 Tokyo Electric Power Co Inc:The Measuring method of conductivity
JPS628040A (en) * 1985-07-05 1987-01-16 Hitachi Ltd Washing apparatus
JPH0641664B2 (en) * 1986-03-14 1994-06-01 東洋紡績株式会社 Chemical processing equipment
JP2658919B2 (en) * 1994-11-14 1997-09-30 日本電気株式会社 Chemical composition monitoring method and device
JP2677263B2 (en) * 1995-07-20 1997-11-17 日本電気株式会社 Chemical composition monitoring method and device
JPH1070101A (en) * 1996-08-27 1998-03-10 Hitachi Ltd Manufacturing method and device, washing method and device, processing device, liquid mixing piping and washing liquid feeding member for semiconductor device
JP3537976B2 (en) * 1996-11-22 2004-06-14 大日本スクリーン製造株式会社 Substrate processing equipment
JP2000208471A (en) * 1999-01-11 2000-07-28 Kurita Water Ind Ltd Device for preparing cleaning water for electronic materials
JP2005189207A (en) * 2003-12-26 2005-07-14 Dainippon Screen Mfg Co Ltd Substrate treatment device, and treating liquid concentration measuring instrument used therefor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6799883B1 (en) * 1999-12-20 2004-10-05 Air Liquide America L.P. Method for continuously blending chemical solutions
TW447026B (en) * 2000-05-24 2001-07-21 Nagase & Co Ltd Substrate surface treating apparatus
TW550630B (en) * 2000-06-26 2003-09-01 Applied Materials Inc Method and apparatus for wet processing wafers

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