TWI410038B - Electrostatic actuator - Google Patents
Electrostatic actuator Download PDFInfo
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- TWI410038B TWI410038B TW099139758A TW99139758A TWI410038B TW I410038 B TWI410038 B TW I410038B TW 099139758 A TW099139758 A TW 099139758A TW 99139758 A TW99139758 A TW 99139758A TW I410038 B TWI410038 B TW I410038B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/007—For controlling stiffness, e.g. ribs
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/002—Electrostatic motors
- H02N1/006—Electrostatic motors of the gap-closing type
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/01—Switches
- B81B2201/012—Switches characterised by the shape
- B81B2201/018—Switches not provided for in B81B2201/014 - B81B2201/016
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/045—Optical switches
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0109—Bridges
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0145—Flexible holders
- B81B2203/0172—Flexible holders not provided for in B81B2203/0154 - B81B2203/0163
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
Abstract
Description
本發明之實施形態係關於一種靜電致動器。Embodiments of the invention relate to an electrostatic actuator.
本申請案係基於且主張2009年11月27日申請之先前的日本專利申請案第2009-270772號之優選權之權益，該申請案之全文以引用之方式併入本文。The present application is based on and claims the benefit of priority to the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the benefit of the disclosure of the disclosure of
已知有一種使靜電力作用於構成致動器之固定子與動子之間並藉由該吸引力而驅動動子之靜電致動器。又，於MEMS(Micro Electro Mechanical Systems，微機電系統)領域等中，使用所謂半導體製程(半導體裝置之製造技術)而開發有非常小型之靜電致動器。An electrostatic actuator that causes an electrostatic force to act between a stator and a mover constituting an actuator and that drives the mover by the attraction force is known. Further, in the field of MEMS (Micro Electro Mechanical Systems), etc., a very small-sized electrostatic actuator has been developed using a so-called semiconductor process (manufacturing technique of a semiconductor device).
又，於MEMS領域等中，已知有一種利用靜電致動器之所謂之MEMS開關。此種MEMS開關中已知有如下者：藉由複數之彈簧要素懸吊膜體部，於開關之接通時賦予吸附電壓，電阻彈簧要素之彈力而將膜體部靜電吸引於電極部，於開關之斷開時賦予釋放電壓，藉由彈簧要素之彈力而使膜體部自電極部隔離。Further, in the field of MEMS and the like, a so-called MEMS switch using an electrostatic actuator is known. In such a MEMS switch, a film body is suspended by a plurality of spring elements, and an adsorption voltage is applied when the switch is turned on, and the film body is electrostatically attracted to the electrode portion by the elastic force of the resistance spring element. When the switch is turned off, a release voltage is applied, and the film body portion is isolated from the electrode portion by the elastic force of the spring element.
此處，靜電驅動型之MEMS開關通常其吸附電壓高至例如20 V(伏特)以上。因此，於將MEMS開關用於行動電話等行動系統中之情形時，需要升壓電路。該情形時，升壓電路由於晶片面積較大且耗電亦較多，故不利於行動系統。進而，升壓電路中產生之雜訊亦有可能導致無線電路產生誤動作。Here, the electrostatically driven MEMS switch usually has an adsorption voltage as high as, for example, 20 V (volts) or more. Therefore, when a MEMS switch is used in a mobile system such as a mobile phone, a booster circuit is required. In this case, since the booster circuit has a large wafer area and consumes a large amount of power, it is disadvantageous to the mobile system. Furthermore, the noise generated in the booster circuit may also cause malfunction of the wireless circuit.
該情形時，若減小彈簧要素之剛性，則可降低吸附電壓。然而，若僅減小彈簧要素之剛性，則易產生膜體部與電極部維持接觸狀態而不隔離之異常、即所謂之靜摩擦不良。又，若降低吸附電壓則使膜體部與電極部接觸之力、即接觸力變弱。其結果為，存在開關之接觸電阻增加之可能性。In this case, if the rigidity of the spring element is reduced, the adsorption voltage can be lowered. However, if only the rigidity of the spring element is reduced, it is easy to cause an abnormality in which the film body portion and the electrode portion are maintained in contact with each other without isolation, that is, a so-called static friction failure. Further, when the adsorption voltage is lowered, the contact force between the film body portion and the electrode portion, that is, the contact force is weakened. As a result, there is a possibility that the contact resistance of the switch increases.
此種問題不僅存在於有接點型之MEMS開關且於高頻電路所使用之可變電容等中亦同樣存在。即，若為降低吸附電壓而僅減小彈簧要素之剛性，則易產生靜摩擦不良。又，由於接觸力變弱故有可能無法獲得較大之電容比。Such a problem exists not only in a contact type MEMS switch but also in a variable capacitor used in a high frequency circuit. That is, if the rigidity of the spring element is reduced only to lower the adsorption voltage, static friction is likely to occur. Moreover, since the contact force is weak, it may be impossible to obtain a large capacitance ratio.
因此，提出有如下技術：藉由剛性不同之複數之彈簧要素懸吊膜體部，接通時自設有剛性較大之彈簧要素之側之膜體部分靜電吸引，斷開時自設有剛性較高之彈簧要素之側之膜體部分隔離(參照專利文獻1)。Therefore, there has been proposed a technique of suspending a film body portion by a plurality of spring elements having different rigidity, and electrostatically attracting a portion of the film body from the side of the spring element having a large rigidity when it is turned on, and self-setting rigidity when disconnected. The film body on the side of the higher spring element is partially isolated (see Patent Document 1).
然而，於專利文獻1所揭示之技術中，並未考慮吸引開始時因較小之力而使膜體部向電極部吸引，吸引開始時之動作有可能變得不穩定。However, in the technique disclosed in Patent Document 1, it is not considered that the film body portion is attracted to the electrode portion due to a small force at the start of suction, and the operation at the start of suction may become unstable.
又，於呈矩形形狀之膜體部之短邊側設置彈簧要素，故於對向之彈簧要素間膜體部易彎曲。因此，存在開關之斷開時膜體部彎曲而導致膜體部之一部分未自電極部隔離等隔離時之動作變得不穩定之可能性。Further, since the spring element is provided on the short side of the rectangular film body portion, the film body portion is easily bent between the opposing spring elements. Therefore, there is a possibility that the operation of the film body is curved when the switch is broken, and the operation of the film body portion is not isolated from the electrode portion or the like, and the operation becomes unstable.
[專利文獻1]日本專利特開2007-35641號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-35641
實施形態之靜電致動器包括設於基板上之電極部、與上述電極部對向設置之導電性之膜體部、設於上述導電性之膜體部之第1周緣部且支持上述膜體部之複數之第1偏壓部、及設於與上述第1周緣部對向之第2周緣部且支持上述膜體部之複數之第2偏壓部。而且，藉由對上述電極部設定特定值之電壓，以上述電極與上述導電性之膜體部接觸或隔離之方式構成，於上述複數之第1偏壓部之各個之間、及上述第2偏壓部之各個之間，其等之剛性彼此不同。An electrostatic actuator according to an embodiment includes an electrode portion provided on a substrate, a conductive film portion provided to face the electrode portion, and a first peripheral portion provided on the conductive film portion to support the film body The first biasing portion of the plurality of portions and the second biasing portion provided in the second peripheral edge portion opposed to the first peripheral edge portion and supporting the plurality of the film body portions. Further, by setting a voltage of a specific value to the electrode portion, the electrode is formed in contact with or isolated from the conductive film body portion, and between the plurality of first bias portions and the second portion The rigidity of each of the biasing portions is different from each other.
以下，一面參照圖式一面例示本發明之實施形態。再者，於各圖式中對相同之構成要素附上相同之符號，並適當省略詳細說明。Hereinafter, embodiments of the present invention will be exemplified with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and the detailed description is omitted as appropriate.
又，圖中之箭頭X、Y、Z表示彼此正交之方向。Moreover, the arrows X, Y, and Z in the figure indicate directions orthogonal to each other.
圖1係用以例示本實施形態之靜電致動器之模式圖。Fig. 1 is a schematic view showing an electrostatic actuator of the embodiment.
再者，圖1(a)係模式平面圖，圖1(b)係圖1(a)之A-A間之剖面圖。1(a) is a plan view, and FIG. 1(b) is a cross-sectional view taken along line A-A of FIG. 1(a).
圖2係用以例示本實施形態之靜電致動器之模式立體圖。再者，圖2(a)係用以例示膜體部與偏壓部之模式立體圖，圖2(b)係圖2(a)之B部之模式放大圖。Fig. 2 is a schematic perspective view showing an electrostatic actuator of the embodiment. 2(a) is a schematic perspective view showing a film body portion and a biasing portion, and FIG. 2(b) is a schematic enlarged view of a portion B of FIG. 2(a).
如圖1、圖2所示，於靜電致動器1上設有電極部2、膜體部3、及偏壓部4。As shown in FIGS. 1 and 2, the electrostatic actuator 1 is provided with an electrode portion 2, a film body portion 3, and a biasing portion 4.
如圖1(b)所示，電極部2係設於基板100上。As shown in FIG. 1(b), the electrode portion 2 is provided on the substrate 100.
電極部2可為例如由金屬等導電性材料而形成者。該情形時，較好的是導電性材料中之電阻值較低者。又，較好的是可於所謂之半導體製程(半導體裝置之製造技術)之成膜或蝕刻等中使用者。作為此種材料，例如可例示鋁(Al)、金(Au)、銀(Ag)、銅(Cu)、鉑(Pt)、或包含該等之合金等。The electrode portion 2 can be formed, for example, of a conductive material such as metal. In this case, it is preferred that the resistance value in the conductive material is lower. Further, it is preferably a user who can perform film formation, etching, or the like in a so-called semiconductor process (manufacturing technique of a semiconductor device). Examples of such a material include aluminum (Al), gold (Au), silver (Ag), copper (Cu), platinum (Pt), and alloys containing the same.
又，電極部2之主面係由絕緣性材料所覆蓋。該情形時，作為絕緣性材料，較好的是可於所謂之半導體製程(半導體裝置之製造技術)之成膜或蝕刻等中使用者。作為此種材料，例如可例示氧化矽(SiO或SiO2 等)、氮化矽(SiN)等。Further, the main surface of the electrode portion 2 is covered with an insulating material. In this case, the insulating material is preferably used in a film formation, etching, or the like of a so-called semiconductor process (manufacturing technique of a semiconductor device). As such a material, for example, cerium oxide (such as SiO or SiO 2 ), tantalum nitride (SiN), or the like can be exemplified.
於電極部2上連接有未圖示之直流電源，而對電極部2賦予正電荷或負電荷。因此，電極部2可對膜體部3進行靜電吸引。A DC power source (not shown) is connected to the electrode unit 2, and a positive or negative charge is applied to the electrode unit 2. Therefore, the electrode portion 2 can electrostatically attract the film body portion 3.
又，於電極部2上連接有未圖示之信號產生部，而可對電極部2施加信號電壓。即，於電極部2上施加有用以對膜體部3進行靜電吸引之驅動電壓、及信號電壓合計之電壓。再者，設有電極部2之基板100可為例如由如玻璃之絕緣性材料而形成者。又，亦可為利用絕緣性材料覆蓋導電性材料、矽(Si)等之半導體材料所形成者之表面者等。Further, a signal generating portion (not shown) is connected to the electrode portion 2, and a signal voltage can be applied to the electrode portion 2. In other words, a voltage for driving the voltage to electrostatically attract the film body 3 and a total voltage of the signal voltage are applied to the electrode portion 2. Further, the substrate 100 provided with the electrode portion 2 may be formed, for example, of an insulating material such as glass. Moreover, it is also possible to cover a surface of a semiconductor material such as a conductive material or bismuth (Si) with an insulating material.
膜體部3係以與電極部2對向之方式而設置。The film body portion 3 is provided to face the electrode portion 2.
又，膜體部3係由金屬等之導電性材料形成。該情形時，較好的是可於所謂之半導體製程(半導體裝置之製造技術)之成膜或蝕刻等中使用者。作為此種材料，例如可例示鋁(Al)、金(Au)、銀(Ag)、銅(Cu)、鉑(Pt)、或包含該等之合金等。Further, the film body portion 3 is formed of a conductive material such as metal. In this case, it is preferable that the user can perform film formation, etching, or the like in a so-called semiconductor process (manufacturing technique of a semiconductor device). Examples of such a material include aluminum (Al), gold (Au), silver (Ag), copper (Cu), platinum (Pt), and alloys containing the same.
又，膜體部3於未對電極部2施加電壓之狀態下，以膜體部3之主面與電極部2之主面之間形成特定尺寸之間隙5的方式而由偏壓部4支持。In addition, the film body portion 3 is supported by the bias portion 4 such that a gap 5 of a specific size is formed between the main surface of the film body portion 3 and the main surface of the electrode portion 2 without applying a voltage to the electrode portion 2. .
又，於膜體部3上連接有具有可撓性之未圖示之接地部，膜體部3成為接地電位。因此，藉由改變膜體部3之主面與電極部2之主面之間所形成之間隙5之尺寸，而可使膜體部3與電極部2之間的電容發生變化。而且，可將該電容之變化利用於開關等中。Further, a ground portion (not shown) having flexibility is connected to the film body portion 3, and the film body portion 3 has a ground potential. Therefore, the capacitance between the film body portion 3 and the electrode portion 2 can be changed by changing the size of the gap 5 formed between the main surface of the film portion 3 and the main surface of the electrode portion 2. Moreover, the change in capacitance can be utilized in a switch or the like.
於呈矩形形狀之膜體部3之第1周緣部3a、第2周緣部3b上設有偏壓部4。因此，膜體部3於圖中之X方向(長軸方向)上易彎曲，於Y方向(與長軸方向大致正交之方向)上難以彎曲。The biasing portion 4 is provided on the first peripheral edge portion 3a and the second peripheral edge portion 3b of the film body portion 3 having a rectangular shape. Therefore, the film body portion 3 is easily bent in the X direction (long axis direction) in the drawing, and is difficult to bend in the Y direction (direction substantially perpendicular to the long axis direction).
又，於膜體部3上設有孔部6。孔部6呈矩形形狀，且以孔部6之長軸方向與膜體部3之長軸方向大致正交之方式而設置。又，膜體部3之第1周緣部3a、第2周緣部3b之附近所設置之孔部6之一端，係於膜體部3之第1周緣部3a、第2周緣部3b開口。因此，藉由設置孔部6而使膜體部3於圖中之X方向(長軸方向)上更易彎曲。Further, a hole portion 6 is provided in the film body portion 3. The hole portion 6 has a rectangular shape and is provided such that the major axis direction of the hole portion 6 is substantially perpendicular to the longitudinal direction of the film body portion 3. Further, one end of the hole portion 6 provided in the vicinity of the first peripheral edge portion 3a and the second peripheral edge portion 3b of the film body portion 3 is opened to the first peripheral edge portion 3a and the second peripheral edge portion 3b of the film body portion 3. Therefore, the film body portion 3 is more easily bent in the X direction (long axis direction) in the drawing by providing the hole portion 6.
圖3(a)、(b)係用以例示設有孔部6時之效果之模式圖。3(a) and 3(b) are schematic diagrams illustrating an effect when the hole portion 6 is provided.
圖3(a)、(b)係對膜體部3模擬賦予不均之應力分佈，藉由FEM(Finite Element Method；有限要素法)模擬而求出Z方向之變位量(翹曲量)。再者，以單調色之濃淡表示Z方向之變位量，表現為Z方向之變位量越大則越淡，Z方向之變位量越小則越濃。3(a) and 3(b) show the stress distribution unevenly applied to the film body portion 3, and the displacement amount in the Z direction (the amount of warpage) is obtained by FEM (Finite Element Method) simulation. . Further, the amount of displacement in the Z direction is indicated by the shading of the single color tone, and the amount of displacement in the Z direction is lighter as the amount of displacement in the Z direction is larger, and the amount of displacement in the Z direction is more concentrated as the amount of displacement in the Z direction is smaller.
此處，靜電致動器1例如可使用半導體製程(半導體裝置之製造技術)而製造。該情形時，若使用濺鍍法或蒸鍍法等，則成膜時有可能產生殘留應力。又，於成膜後之熱處理步驟中亦存在薄膜(膜體部3)之結晶特性變化而產生翹曲之可能性。Here, the electrostatic actuator 1 can be manufactured, for example, using a semiconductor process (manufacturing technique of a semiconductor device). In this case, if a sputtering method, a vapor deposition method, or the like is used, residual stress may occur during film formation. Further, in the heat treatment step after the film formation, there is also a possibility that the crystal characteristics of the film (the film body portion 3) are changed to cause warpage.
如圖3(a)所示，於膜體部30上未設置孔部6之情形時，因殘留應力引起之膜體部30之Z方向之變位量(翹曲量)較大。As shown in FIG. 3(a), when the hole portion 6 is not provided in the film body portion 30, the displacement amount (warpage amount) of the film body portion 30 in the Z direction due to the residual stress is large.
另一方面，如圖3(b)所示，於膜體部3上設有孔部6之情形時，可減小因殘留應力引起之膜體部3之Z方向之變位量(翹曲量)。On the other hand, as shown in FIG. 3(b), when the hole portion 6 is provided in the film body portion 3, the amount of displacement of the film body portion 3 in the Z direction due to residual stress can be reduced (warpage) the amount).
若於膜體部3上設置孔部6，膜體部3於圖中之X方向(長軸方向)上易彎曲。因此，易於藉由偏壓部4而矯正因殘留應力引起之膜體部3之變形，故可減小膜體部3之Z方向之變位量(翹曲量)。When the hole portion 6 is provided in the film body portion 3, the film body portion 3 is easily bent in the X direction (long axis direction) in the drawing. Therefore, it is easy to correct the deformation of the film body portion 3 due to the residual stress by the bias portion 4, so that the amount of displacement (warpage amount) of the film body portion 3 in the Z direction can be reduced.
又，如圖1及圖2等所例示般，若以孔部6之長軸方向與膜體部3之長軸方向大致正交之方式而設置孔部6，則膜體部3於圖中之X方向(膜體部3之長軸方向)上易彎曲。又，若膜體部3之第1周緣部3a、第2周緣部3b之附近所設之孔部6之一端，係於膜體部3之第1周緣部3a、第2周緣部3b開口，則膜體部3於圖中之X方向(膜體部3之長軸方向)上更易彎曲。因此，若設置此種孔部6，則可進而減小因殘留應力引起之膜體部3之Z方向之變位量(翹曲量)。Further, as illustrated in FIG. 1 and FIG. 2 and the like, when the hole portion 6 is provided so that the major axis direction of the hole portion 6 is substantially perpendicular to the long axis direction of the film body portion 3, the film body portion 3 is in the drawing. The X direction (the long axis direction of the film body portion 3) is easily bent. In addition, one end of the hole portion 6 provided in the vicinity of the first peripheral edge portion 3a and the second peripheral edge portion 3b of the film body portion 3 is opened at the first peripheral edge portion 3a and the second peripheral edge portion 3b of the film body portion 3, Then, the film body portion 3 is more easily bent in the X direction (the long axis direction of the film body portion 3) in the drawing. Therefore, when such a hole portion 6 is provided, the amount of displacement (warpage amount) of the film body portion 3 in the Z direction due to residual stress can be further reduced.
於偏壓部4之一端設有連接部4a，連接部4a係與基板100連接。偏壓部4之另一端係與膜體部3之第1周緣部3a、第2周緣部3b連接。又，偏壓部4係由彈性材料形成。因此，偏壓部4成為所謂之彈性梁。A connection portion 4a is provided at one end of the biasing portion 4, and the connection portion 4a is connected to the substrate 100. The other end of the biasing portion 4 is connected to the first peripheral edge portion 3a and the second peripheral edge portion 3b of the membrane body portion 3. Further, the biasing portion 4 is formed of an elastic material. Therefore, the biasing portion 4 becomes a so-called elastic beam.
又，於偏壓部4上設有緩衝部4b。緩衝部4b係為減少因熱膨脹等所產生之熱應力而設置。例如，於圖1、圖2所例示之偏壓部4上，設置有以於與偏壓部4之長軸方向(相當於長度方向)正交之方向突出之方式而形成的緩衝部4b。而且，於產生X方向、Y方向之熱膨脹之情形時，可藉由緩衝部4b變形而減少熱應力。Further, a buffer portion 4b is provided on the bias portion 4. The buffer portion 4b is provided to reduce thermal stress generated by thermal expansion or the like. For example, the biasing portion 4 illustrated in FIGS. 1 and 2 is provided with a buffer portion 4b formed to protrude in a direction orthogonal to the longitudinal direction of the biasing portion 4 (corresponding to the longitudinal direction). Further, when thermal expansion in the X direction and the Y direction occurs, the thermal stress can be reduced by the deformation of the buffer portion 4b.
作為偏壓部4之材料，較好的是可於所謂之半導體製程(半導體裝置之製造技術)之成膜或蝕刻等中使用者。作為此種材料，例如可例示氮化矽(SiN)、氧化矽(SiO、SiO2 等)、鈦鋁化物(TiAl、Ti3 Al、Al3 Ti等)、鋁(Al)等之金屬等。該情形時，若考慮偏壓部4之壽命(發生斷裂等為止之彎曲次數)，則較好的是由對潛變變形之耐性較高之材料而形成。根據本發明者等人所得之見解，較好的而是由對潛變變形之耐性高於鋁(Al)之材料而形成，例如上述材料中較好的是氮化矽(SiN)、氧化矽(SiO、SiO2 等)、鈦鋁化物(TiAl、Ti3 Al、Al3 Ti等)。The material of the biasing portion 4 is preferably a user who can form a film, etch, or the like in a so-called semiconductor process (manufacturing technique of a semiconductor device). Examples of such a material include a metal such as tantalum nitride (SiN), yttrium oxide (such as SiO or SiO 2 ), titanium aluminide (TiAl, Ti 3 Al, or Al 3 Ti), or aluminum (Al). In this case, considering the life of the biasing portion 4 (the number of bendings due to breakage or the like), it is preferably formed of a material having high resistance to creep deformation. According to the findings obtained by the inventors of the present invention, it is preferable to form a material which is more resistant to latent deformation than aluminum (Al). For example, among the above materials, preferred is tantalum nitride (SiN) or cerium oxide. (SiO, SiO 2 , etc.), titanium aluminide (TiAl, Ti 3 Al, Al 3 Ti, etc.).
又，設置有設在膜體部3之第1周緣部3a且支持膜體部3之複數之第1偏壓部(例如圖1中設於Y方向之上側之偏壓部4)、及設在與第1周緣部3a對向之第2周緣部3b且支持膜體部3之複數之第2偏壓部(例如於圖1中設於Y方向之下側之偏壓部4)。而且，第1偏壓部彼此之剛性相互不同，第2偏壓部彼此之剛性相互不同。即，於膜體部3之對向之第1周緣部3a、第2周緣部3b，設置有剛性不同之複數之偏壓部4。In addition, a plurality of first biasing portions (for example, biasing portions 4 provided on the upper side in the Y direction in FIG. 1) provided in the first peripheral edge portion 3a of the film body portion 3 and supporting the film body portion 3 are provided. The second biasing portion (for example, the biasing portion 4 provided on the lower side in the Y direction in FIG. 1) of the second peripheral edge portion 3b facing the first peripheral edge portion 3a and supporting the membrane body portion 3. Further, the rigidity of the first biasing portions is different from each other, and the rigidity of the second biasing portions is different from each other. In other words, the first peripheral edge portion 3a and the second peripheral edge portion 3b facing the film body portion 3 are provided with a plurality of bias portions 4 having different rigidity.
又，偏壓部4之剛性係沿膜體部3之第1周緣部3a、第2周緣部3b而階段性或逐漸地變化。而且，第1偏壓部之剛性係設在第1周緣部3a之中央部側者高於設在第1周緣部3a之端部側者。又，第2偏壓部之剛性係設在第2周緣部3b之中央部側者高於設在第2周緣部3b之端部側者。Further, the rigidity of the bias portion 4 changes stepwise or gradually along the first peripheral edge portion 3a and the second peripheral edge portion 3b of the film body portion 3. Further, the rigidity of the first biasing portion is provided on the side of the central portion of the first peripheral edge portion 3a, which is higher than the end portion of the first peripheral edge portion 3a. In addition, the rigidity of the second biasing portion is higher on the side of the center portion of the second peripheral edge portion 3b than at the end portion of the second peripheral edge portion 3b.
又，第1偏壓部與第2偏壓部係設置於彼此對向之位置。而且，位於彼此對向之位置之第1偏壓部之剛性、與第2偏壓部之剛性大致相同。即，偏壓部4於膜體部3之對向之第1周緣部3a、第2周緣部3b係設置於彼此對向的位置。而且，位於彼此對向之位置之偏壓部4彼此之剛性大致相同。Further, the first biasing portion and the second biasing portion are disposed at positions facing each other. Further, the rigidity of the first biasing portion located at a position facing each other is substantially the same as the rigidity of the second biasing portion. In other words, the first peripheral edge portion 3a and the second peripheral edge portion 3b of the biasing portion 4 opposed to each other in the film body portion 3 are provided at positions facing each other. Moreover, the biasing portions 4 located at positions opposite to each other are substantially identical in rigidity to each other.
偏壓部4之剛性可藉由改變偏壓部4之尺寸而變化。例如，剛性與偏壓部4之長度尺寸(Y方向之尺寸)之立方成反比，與偏壓部4之寬度尺寸(X方向尺寸)成正比。又，與偏壓部4之厚度尺寸(Z方向尺寸)之立方成正比。因此，偏壓部4之長度尺寸越短、寬度尺寸越長則偏壓部4之剛性越高。又，偏壓部4之厚度尺寸越厚則偏壓部4之剛性越高。The rigidity of the biasing portion 4 can be changed by changing the size of the biasing portion 4. For example, the rigidity is inversely proportional to the cube of the length dimension (the dimension in the Y direction) of the biasing portion 4, and is proportional to the width dimension (the dimension in the X direction) of the biasing portion 4. Moreover, it is proportional to the cube of the thickness dimension (Z direction dimension) of the biasing portion 4. Therefore, the shorter the length dimension of the biasing portion 4 and the longer the width dimension, the higher the rigidity of the bias portion 4. Further, the thicker the thickness of the biasing portion 4, the higher the rigidity of the bias portion 4.
於圖1、圖2所例示之情形時，係使寬度尺寸(X方向尺寸)與厚度尺寸(Z方向尺寸)大致同等，藉由改變偏壓部4之長度尺寸而改變剛性。而且，於X方向上設置於膜體部3之中央部之偏壓部4之長度尺寸最短，隨著靠近膜體部3之端部而使偏壓部4之長度尺寸變長，藉此偏壓部4之剛性階段性、或逐漸地變低。即，膜體部3之兩端部附近所設之偏壓部4之剛性最低，膜體部3之中央部附近所設之偏壓部4之剛性最高。又，於Y方向上，以彼此對向之方式而設置之偏壓部4彼此之剛性大致相同。In the case illustrated in Figs. 1 and 2, the width dimension (X-direction dimension) is substantially equal to the thickness dimension (Z-direction dimension), and the rigidity is changed by changing the length dimension of the biasing portion 4. Further, the biasing portion 4 provided in the central portion of the film body portion 3 in the X direction has the shortest length dimension, and the length of the biasing portion 4 becomes longer as it approaches the end portion of the film body portion 3. The rigidity of the pressing portion 4 is gradually or gradually lowered. That is, the bias portion 4 provided near the both end portions of the film body portion 3 has the lowest rigidity, and the bias portion 4 provided near the center portion of the film body portion 3 has the highest rigidity. Further, in the Y direction, the bias portions 4 provided to face each other are substantially identical in rigidity.
其次，對本實施形態之靜電致動器1之作用進行例示。Next, the action of the electrostatic actuator 1 of the present embodiment will be exemplified.
圖4係用以例示本實施形態之靜電致動器之作用之模式圖表。Fig. 4 is a schematic diagram for illustrating the action of the electrostatic actuator of the embodiment.
再者，圖4係藉由FEM(Finite Element Method；有限要素法)模擬而靜電致動器之驅動特性。又，縱軸表示膜體部中心之Z方向之變位量，橫軸表示驅動電壓。該情形時，靜電吸引除藉由驅動電壓產生外，亦藉由信號電壓而產生，此係本模擬中對於驅動特性而言最嚴格之條件。即，吸附時(吸引時)信號電壓設為0 V(伏特)，釋放時(隔離時)施加4 V(伏特)之信號電壓，而進行計算。又，圖中之C點係吸引開始位置，D點係吸引停止位置。Furthermore, Fig. 4 is a driving characteristic of an electrostatic actuator simulated by FEM (Finite Element Method). Further, the vertical axis represents the amount of displacement in the Z direction of the center of the film body, and the horizontal axis represents the driving voltage. In this case, the electrostatic attraction is generated by the signal voltage in addition to the driving voltage, which is the most stringent condition for the driving characteristics in this simulation. That is, the signal voltage at the time of adsorption (at the time of attraction) is set to 0 V (volts), and the signal voltage of 4 V (volts) is applied during the release (at the time of isolation), and calculation is performed. Further, the point C in the figure is the suction start position, and the point D is the suction stop position.
如圖4所示，於使膜體部3向電極部2靜電吸引之情形時，藉由未圖示之直流電源對電極部2施加驅動電壓。若對電極部2施加驅動電壓則電極部2賦予有正電荷或負電荷，故膜體部3向電極部2靜電吸引。而且，若驅動電壓自C點起如箭頭(1)般上升則靜電吸引力變大，故於箭頭(2)部分之吸附電壓下，膜體部3靜電吸附於電極部2。再者，如箭頭(3)般到達D點為止驅動電壓上升。As shown in FIG. 4, when the film body portion 3 is electrostatically attracted to the electrode portion 2, a driving voltage is applied to the electrode portion 2 by a DC power source (not shown). When a driving voltage is applied to the electrode portion 2, the electrode portion 2 is supplied with a positive electric charge or a negative electric charge, so that the film body portion 3 is electrostatically attracted to the electrode portion 2. When the driving voltage rises from the point C as indicated by the arrow (1), the electrostatic attractive force increases. Therefore, the film body portion 3 is electrostatically adsorbed to the electrode portion 2 at the adsorption voltage at the portion of the arrow (2). Further, as the arrow (3) reaches the point D, the driving voltage rises.
膜體部3靜電吸引於電極部2時，首先，X方向上設於膜體部3之兩端部之剛性較低之偏壓部4彎曲，該部分之間隙5之尺寸變小。此處，靜電吸引力係與膜體部3之主面與電極部2之主面之間所形成之間隙5之尺寸的平方成反比。因此，若間隙5之尺寸變小則會產生較大吸引力，故膜體部3容易地被吸引。而且，膜體部3被牽引至該部分而彎曲，間隙5之尺寸變小之部分、即產生較大吸引力之部分逐漸於X方向上擴大。因此，越靠近膜體部3之中央部則偏壓部4之剛性越高，即便如此亦可容易地吸引膜體部3。又，可降低使膜體部3靜電吸附於電極部2所必需之吸附電壓(圖4中之箭頭(2)部分之電壓)。When the film body portion 3 is electrostatically attracted to the electrode portion 2, first, the bias portion 4 having a low rigidity provided at both end portions of the film body portion 3 in the X direction is curved, and the size of the gap 5 in this portion is reduced. Here, the electrostatic attraction force is inversely proportional to the square of the size of the gap 5 formed between the main surface of the film body portion 3 and the main surface of the electrode portion 2. Therefore, if the size of the gap 5 becomes small, a large attraction force is generated, so that the film body portion 3 is easily attracted. Further, the film body portion 3 is drawn to the portion and bent, and the portion where the size of the gap 5 becomes small, that is, the portion where the large attraction force is generated gradually expands in the X direction. Therefore, the closer to the central portion of the film body portion 3, the higher the rigidity of the bias portion 4, and even the film body portion 3 can be easily attracted. Moreover, the adsorption voltage (voltage at the portion of the arrow (2) in FIG. 4) necessary for electrostatically adsorbing the film body portion 3 to the electrode portion 2 can be reduced.
又，膜體部3具有長方形形狀。因此，膜體部3於圖中之X方向(長軸方向)上易彎曲。又，以膜體部3於圖中之X方向(長軸方向)上易彎曲之方式而設置有孔部6。Further, the film body portion 3 has a rectangular shape. Therefore, the film body portion 3 is easily bent in the X direction (long axis direction) in the drawing. Further, the hole portion 6 is provided such that the film body portion 3 is easily bent in the X direction (long axis direction) in the drawing.
因此，可進而降低使膜體部3靜電吸附於電極部2所必需之吸附電壓(圖4中之箭頭(2)部分之電壓)。Therefore, the adsorption voltage (the voltage at the portion of the arrow (2) in FIG. 4) necessary for electrostatically adsorbing the film body portion 3 to the electrode portion 2 can be further reduced.
又，膜體部3於圖中之Y方向(與長軸方向大致正交之方向)上難以彎曲。因此，可抑制不必要之變形，故可實現動作之穩定化。Further, the film body portion 3 is difficult to bend in the Y direction (a direction substantially orthogonal to the long axis direction) in the drawing. Therefore, unnecessary deformation can be suppressed, and stabilization of the operation can be achieved.
此處，於膜體部3上連接有具有可撓性之未圖示之接地部，膜體部3成為接地電位。因此，藉由膜體部3之主面與電極部2之主面之間所形成之間隙5之尺寸變化，膜體部3與電極部2之間之電容發生變化。而且，可將該電容之變化利用於開關等中。Here, a ground portion (not shown) having flexibility is connected to the film body portion 3, and the film body portion 3 is at a ground potential. Therefore, the capacitance between the film body portion 3 and the electrode portion 2 changes by the dimensional change of the gap 5 formed between the main surface of the film body portion 3 and the main surface of the electrode portion 2. Moreover, the change in capacitance can be utilized in a switch or the like.
於D點處，藉由未圖示之信號產生部而對電極部2施加4 V(伏特)之信號電壓。如此，於對電極部2施加有信號電壓之情形時，係藉由驅動電壓與信號電壓之合計電壓而進行靜電吸引。At the point D, a signal voltage of 4 V (volts) is applied to the electrode portion 2 by a signal generating portion (not shown). As described above, when a signal voltage is applied to the electrode unit 2, electrostatic attraction is performed by a total voltage of the driving voltage and the signal voltage.
於使膜體部3自電極部2隔離之情形時，係藉由未圖示之直流電源停止向電極部2之驅動電壓之施加。若停止向電極部2之驅動電壓之施加，則向電極部2之正電荷或負電荷之供給停止，故靜電吸引解除。而且，若驅動電壓自D點起如箭頭(4)般下降則靜電吸引力變小，故於箭頭(5)部分之釋放電壓下膜體部3自電極部2隔離。When the film body portion 3 is isolated from the electrode portion 2, the application of the driving voltage to the electrode portion 2 is stopped by a DC power source (not shown). When the application of the driving voltage to the electrode unit 2 is stopped, the supply of positive or negative charges to the electrode unit 2 is stopped, so that the electrostatic attraction is released. Further, when the driving voltage drops from the point D as indicated by the arrow (4), the electrostatic attractive force becomes small, so that the film body portion 3 is isolated from the electrode portion 2 at the release voltage of the arrow (5) portion.
當靜電吸引解除時，首先，於X方向上藉由設於膜體部3之中央部之剛性較高之偏壓部4之彈性力而使膜體部3之中央部自電極部2隔離。膜體部3自電極部2隔離之部分上，間隙5之尺寸變大，故靜電吸引力變小，膜體部3可容易地隔離。而且，膜體部3藉由向該部分牽引而彎曲，間隙5之尺寸變大之部分、即靜電吸引力變小之部分逐漸於X方向上擴撒。因此，越靠近膜體部3之兩端部則偏壓部4之剛性越低，即便如此亦可使膜體部3容易地隔離。When the electrostatic attraction is released, first, the central portion of the film body portion 3 is separated from the electrode portion 2 by the elastic force of the bias portion 4 having a high rigidity provided in the central portion of the film body portion 3 in the X direction. When the film body portion 3 is separated from the electrode portion 2, the size of the gap 5 is increased, so that the electrostatic attraction force is small, and the film body portion 3 can be easily isolated. Further, the film body portion 3 is bent by being pulled toward the portion, and a portion where the size of the gap 5 is increased, that is, a portion where the electrostatic attraction force is small is gradually spread in the X direction. Therefore, the closer to the both end portions of the film body portion 3, the lower the rigidity of the bias portion 4, and even the film body portion 3 can be easily isolated.
此處，於電極部2上施加有信號電壓，故產生因信號電壓引起之靜電吸引力。又，即便驅動電壓之施加停止有時亦有殘留電荷殘留。Here, since the signal voltage is applied to the electrode portion 2, the electrostatic attractive force due to the signal voltage is generated. Further, even if the application of the driving voltage is stopped, residual charge remains.
於本實施形態中，在X方向之膜體部3之中央部設有剛性較高之偏壓部4，以設於中央部之偏壓部4之隔離為起點而隔離之位置可逐漸於X方向上擴大。因此，可提高使膜體部3自電極部2隔離時之釋放電壓(圖4中之箭頭(5)部分之電壓)。In the present embodiment, the bias portion 4 having a high rigidity is provided in the central portion of the film body portion 3 in the X direction, and the position of the bias portion 4 provided at the center portion is separated from the starting point and can be gradually separated from the X. Expand in direction. Therefore, the release voltage (the voltage at the portion of the arrow (5) in Fig. 4) when the film body portion 3 is isolated from the electrode portion 2 can be improved.
又，膜體部3具有長方形形狀。因此，膜體部3於圖中之X方向(長軸方向)上易於彎曲。又，以膜體部3於圖中之X方向(長軸方向)上易彎曲之方式而設置有孔部6。Further, the film body portion 3 has a rectangular shape. Therefore, the film body portion 3 is easily bent in the X direction (long axis direction) in the drawing. Further, the hole portion 6 is provided such that the film body portion 3 is easily bent in the X direction (long axis direction) in the drawing.
因此，可進而提高使膜體部3自電極部2隔離時之釋放電壓(圖4中之箭頭(5)部分之電壓)。Therefore, the release voltage (the voltage at the portion of the arrow (5) in Fig. 4) when the film body portion 3 is isolated from the electrode portion 2 can be further increased.
又，膜體部3於圖中之Y方向(與長軸方向大致正交之方向)上難以彎曲。因此，可抑制不必要之變形，從而可實現動作之穩定化。Further, the film body portion 3 is difficult to bend in the Y direction (a direction substantially orthogonal to the long axis direction) in the drawing. Therefore, unnecessary deformation can be suppressed, and stabilization of the operation can be achieved.
圖5係用以例示比較例之靜電致動器之模式圖。Fig. 5 is a schematic view for illustrating an electrostatic actuator of a comparative example.
圖6係用以例示靜電致動器之驅動特性之模式圖表。Fig. 6 is a schematic diagram illustrating a driving characteristic of an electrostatic actuator.
圖5所例示之靜電致動器50a~50e中，各靜電致動器之偏壓部之剛性大致相同。該情形時，按照圖5(a)所例示之靜電致動器50a中所設之偏壓部之剛性最低，圖5(b)所例示之靜電致動器50b、圖5(c)所例示之靜電致動器50c、圖5(d)所例示之靜電致動器50d、圖5(e)所例示之靜電致動器50e之順序，偏壓部之剛性逐漸變高。In the electrostatic actuators 50a to 50e illustrated in Fig. 5, the bias portions of the respective electrostatic actuators have substantially the same rigidity. In this case, the rigidity of the biasing portion provided in the electrostatic actuator 50a illustrated in Fig. 5(a) is the lowest, and the electrostatic actuator 50b illustrated in Fig. 5(b) is illustrated in Fig. 5(c). In the order of the electrostatic actuator 50c, the electrostatic actuator 50d illustrated in FIG. 5(d), and the electrostatic actuator 50e illustrated in FIG. 5(e), the rigidity of the bias portion gradually increases.
又，圖6係藉由FEM(Finite Element Method；有限要素法)模擬而求出靜電致動器之驅動特性。又，縱軸表示膜體部中心之Z方向之變位量，橫軸表示驅動電壓。該情形時，靜電吸引除藉由驅動電壓產生之外，亦藉由信號電壓而產生，此係本模擬中對於驅動特性而言最嚴格之條件。即，吸附時(吸引時)信號電壓設為0 V(伏特)，釋放時(隔離時)施加4 V(伏特)之信號電壓，而進行計算。Further, Fig. 6 is a simulation of the driving characteristics of the electrostatic actuator by FEM (Finite Element Method) simulation. Further, the vertical axis represents the amount of displacement in the Z direction of the center of the film body, and the horizontal axis represents the driving voltage. In this case, the electrostatic attraction is generated by the signal voltage in addition to the driving voltage, which is the most stringent condition for the driving characteristics in this simulation. That is, the signal voltage at the time of adsorption (at the time of attraction) is set to 0 V (volts), and the signal voltage of 4 V (volts) is applied during the release (at the time of isolation), and calculation is performed.
根據圖6可知，若如靜電致動器50a般降低偏壓部之剛性，則可降低吸附電壓。然而，於施加有4 V(伏特)之信號電壓之狀態下，若均等地降低偏壓部之剛性則產生如靜電致動器50a、50b、50c般膜體部3無法自電極部2隔離之問題。As can be seen from Fig. 6, when the rigidity of the bias portion is lowered as in the electrostatic actuator 50a, the adsorption voltage can be lowered. However, in a state where a signal voltage of 4 V (volts) is applied, if the rigidity of the bias portion is uniformly lowered, the film body portion 3 cannot be isolated from the electrode portion 2 as in the case of the electrostatic actuators 50a, 50b, and 50c. problem.
該情形時，若如靜電致動器50d、50e般提高偏壓部之剛性，則即便於施加有4 V(伏特)之信號電壓之狀態下亦可使膜體部3自電極部2隔離。然而，若提高偏壓部之剛性則吸附電壓亦變高。In this case, when the rigidity of the bias portion is increased as in the electrostatic actuators 50d and 50e, the film body portion 3 can be isolated from the electrode portion 2 even when a signal voltage of 4 V (volts) is applied. However, if the rigidity of the bias portion is increased, the adsorption voltage also becomes high.
相對於此，根據本實施形態之靜電致動器1，可降低吸附電壓並且可提高釋放電壓。因此，可使靜電致動器1之動作大幅穩定。又，可減少耗電並且可減小電極部之大小，故可實現靜電致動器1之小型化。On the other hand, according to the electrostatic actuator 1 of the present embodiment, the adsorption voltage can be lowered and the discharge voltage can be increased. Therefore, the operation of the electrostatic actuator 1 can be largely stabilized. Moreover, the power consumption can be reduced and the size of the electrode portion can be reduced, so that the size of the electrostatic actuator 1 can be reduced.
其次，對其他實施形態之靜電致動器進行例示。Next, an electrostatic actuator of another embodiment will be exemplified.
圖7係用以例示其他實施形態之靜電致動器之模式圖。Fig. 7 is a schematic view showing an electrostatic actuator of another embodiment.
亦可如圖7(a)、圖7(b)所例示之靜電致動器1a、1b般，偏壓部4之剛性自膜體部3之其中一端部起朝向另一端部階段性、或逐漸變化。As in the electrostatic actuators 1a and 1b illustrated in FIGS. 7( a ) and 7 ( b ), the rigidity of the biasing portion 4 may be gradually shifted from one end portion of the film body portion 3 toward the other end portion, or Gradually change.
又，亦可如圖7(c)所例示之靜電致動器1c般，設於膜體部3之中央部之偏壓部4之剛性最，隨著靠近膜體部3之端部則偏壓部4之剛性階段性、或逐漸地變高。Further, as in the electrostatic actuator 1c illustrated in Fig. 7(c), the bias portion 4 provided at the central portion of the film body portion 3 has the most rigidity, and is closer to the end portion of the film body portion 3 The rigidity of the pressing portion 4 is gradually or gradually increased.
即便於圖7(a)~(c)所例示之靜電致動器1a~1c之情形時，亦可降低吸附電壓並且可提高釋放電壓。因此，可使靜電致動器1a~1c之動作大幅穩定。又，可降低耗電並且可減小電極部之大小，故亦可實現靜電致動器1a~1c之小型化。That is, in the case of the electrostatic actuators 1a to 1c illustrated in Figs. 7(a) to (c), the adsorption voltage can be lowered and the discharge voltage can be increased. Therefore, the operations of the electrostatic actuators 1a to 1c can be largely stabilized. Further, since the power consumption can be reduced and the size of the electrode portion can be reduced, the size of the electrostatic actuators 1a to 1c can be reduced.
其次，進而例示本發明者等人對圖1、圖7所例示之靜電致動器之見解。Next, the inventors of the present invention have exemplified the findings of the electrostatic actuators illustrated in Figs. 1 and 7 .
圖8係用以例示相對於環境溫度之變化之穩定性之模式圖表。Figure 8 is a pattern diagram illustrating the stability of changes with respect to ambient temperature.
圖8係藉由FEM(Finite Element Method；有限要素法)模擬而求出相對於環境溫度之變化之膜體部中心之Z方向之變位量。再者，縱軸表示膜體部中心之Z方向之變位量，橫軸表示環境溫度。又，將初期溫度設為20℃，使環境溫度上升至200℃為止。Fig. 8 shows the amount of displacement in the Z direction of the center of the film body with respect to changes in ambient temperature by FEM (Finite Element Method; finite element method) simulation. Further, the vertical axis represents the amount of displacement in the Z direction of the center of the film body, and the horizontal axis represents the ambient temperature. Further, the initial temperature was set to 20 ° C, and the ambient temperature was raised to 200 ° C.
又，圖9係用以例示環境溫度為200℃時之情形之模式圖。Further, Fig. 9 is a schematic view for illustrating a case where the ambient temperature is 200 °C.
再者，以單調色之濃淡表示Z方向之變位量，表現為Z方向之變位量越大則越淡，Z方向之變位量越小則越濃。Further, the amount of displacement in the Z direction is indicated by the shading of the single color tone, and the amount of displacement in the Z direction is lighter as the amount of displacement in the Z direction is larger, and the amount of displacement in the Z direction is more concentrated as the amount of displacement in the Z direction is smaller.
根據圖8、圖9可知，於圖7(c)所例示之靜電致動器1c之情形時，若環境溫度超過130℃則膜體部3之變位量變大。相對於此，於圖1所例示之靜電致動器1之情形時，即便環境溫度為200℃，膜體部3之變位量亦不會變大。As can be seen from Fig. 8 and Fig. 9, in the case of the electrostatic actuator 1c illustrated in Fig. 7(c), when the ambient temperature exceeds 130 °C, the amount of displacement of the film body portion 3 becomes large. On the other hand, in the case of the electrostatic actuator 1 illustrated in Fig. 1, even if the ambient temperature is 200 °C, the displacement amount of the film body portion 3 does not become large.
隨著環境溫度變高，膜體部3因熱膨脹而於X方向、Y方向上延伸。該情形時，於Y方向上膜體部3之尺寸較短，故即便膜體部3於Y方向上延伸亦可藉由緩衝部4b進行緩和。As the ambient temperature increases, the film body portion 3 extends in the X direction and the Y direction due to thermal expansion. In this case, since the size of the film body portion 3 in the Y direction is short, even if the film body portion 3 extends in the Y direction, it can be relaxed by the buffer portion 4b.
另一方面，於X方向上膜體部3之尺寸較長故因熱膨脹引起之延伸量較大。On the other hand, the size of the film body portion 3 in the X direction is long, and the amount of elongation due to thermal expansion is large.
該情形時，於靜電致動器1c中剛性較高之偏壓部4係設置於膜體部3之兩端部附近。因此會妨礙膜體部3之熱膨脹，而使膜體部3於Z方向上易於變形。In this case, the bias portion 4 having a high rigidity in the electrostatic actuator 1c is provided in the vicinity of both end portions of the film body portion 3. Therefore, the thermal expansion of the film body 3 is hindered, and the film body 3 is easily deformed in the Z direction.
相對於此，靜電致動器1中，剛性較高之偏壓部4係設置於膜體部3之中央部附近。因此，妨礙膜體部3之熱膨脹之情形較少，而使膜體部3於Z方向上難以變形。On the other hand, in the electrostatic actuator 1, the bias portion 4 having a high rigidity is provided in the vicinity of the central portion of the film body portion 3. Therefore, the thermal expansion of the film body portion 3 is hindered, and the film body portion 3 is hardly deformed in the Z direction.
其結果，如圖8、圖9所示，靜電致動器1難以受到溫度變化之影響。As a result, as shown in FIGS. 8 and 9, the electrostatic actuator 1 is hardly affected by temperature changes.
環境溫度成為高溫之狀況不僅會於靜電致動器之使用環境中產生，且於靜電致動器之製造步驟中亦可能產生。例如，於使用半導體製程(半導體裝置之製造技術)製造靜電致動器之情形時，有時需要在成膜後進行高溫之熱處理。The situation in which the ambient temperature becomes a high temperature is generated not only in the environment in which the electrostatic actuator is used, but also in the manufacturing steps of the electrostatic actuator. For example, in the case of manufacturing an electrostatic actuator using a semiconductor process (manufacturing technique of a semiconductor device), it is sometimes necessary to perform a heat treatment at a high temperature after film formation.
因此，若考慮相對於環境溫度之變化之穩定性，較好的是採用如圖1所例示之靜電致動器1般之偏壓部4之配置。即，較好的是使設於膜體部3之中央部附近之偏壓部4之剛性為最高，而越靠近膜體部3之端部則偏壓部4之剛性階段性或逐漸地變低。Therefore, in consideration of the stability with respect to the change in the ambient temperature, it is preferable to adopt the arrangement of the biasing portion 4 like the electrostatic actuator 1 illustrated in Fig. 1. That is, it is preferable that the rigidity of the biasing portion 4 provided in the vicinity of the central portion of the film body portion 3 is the highest, and the rigidity of the biasing portion 4 is gradually or gradually changed toward the end portion of the film body portion 3. low.
圖10係用以例示偏壓部之材料構成之模式圖。Fig. 10 is a schematic view showing the material configuration of the biasing portion.
於圖1所例示之靜電致動器1之情形時，可為偏壓部4與膜體部3由不同材料形成者。例如，偏壓部4可為由對於潛變變形之耐性高於鋁(Al)之材料(例如氮化矽(SiN)、氧化矽(SiO、SiO2 等)、鈦鋁化物(TiAl、Ti3 Al、Al3 Ti等)等)所形成者。又，膜體部3可為由金屬等之導電性材料(例如鋁(Al)、金(Au)、銀(Ag)、銅(Cu)、鉑(Pt)、或包含該等之合金等)所形成者。In the case of the electrostatic actuator 1 illustrated in Fig. 1, the biasing portion 4 and the film body portion 3 may be formed of different materials. For example, the biasing portion 4 may be a material that is more resistant to latent deformation than aluminum (Al) (for example, tantalum nitride (SiN), yttrium oxide (SiO, SiO 2 , etc.), titanium aluminide (TiAl, Ti 3 ) Al, Al 3 Ti, etc.) are formed. Further, the film body portion 3 may be a conductive material such as aluminum (Al, Al, Ag, Cu, Pt, or the like). Formed by.
相對於此，圖10(a)係例示偏壓部與膜體部由相同材料而形成之情形。例如，可例示偏壓部與膜體部由鋁(Al)形成之情形。若如此，則可一體形成偏壓部及膜體部，故可削減製造製程之步驟數。又，若偏壓部由導電性材料而形成，則可將偏壓部作為用以使膜體部成為接地電位之接地部。因此，無須另外設置未圖示之接地部，故可減小佔據面積。On the other hand, FIG. 10( a ) illustrates a case where the biasing portion and the film body portion are formed of the same material. For example, a case where the bias portion and the film portion are formed of aluminum (Al) can be exemplified. According to this configuration, the bias portion and the film portion can be integrally formed, so that the number of steps in the manufacturing process can be reduced. Further, when the bias portion is formed of a conductive material, the bias portion can be used as a ground portion for making the film body portion a ground potential. Therefore, it is not necessary to separately provide a ground portion (not shown), so that the occupied area can be reduced.
圖10(b)係例示X方向之兩端部附近所設之偏壓部14a使用與膜體部3相同之材料形成，其他偏壓部14b由相對於潛變變形之耐性高於鋁(Al)之材料形成的情形。Fig. 10(b) shows that the biasing portion 14a provided near the both end portions in the X direction is formed of the same material as that of the film body portion 3, and the other biasing portion 14b is more resistant to deformation than the latent deformation than aluminum (Al). The situation in which the material is formed.
此處，成為膜體部3之材料之鋁(Al)等之導電性材料通常易產生潛變變形。因此，若使偏壓部使用與膜體部3相同之材料(例如鋁(Al)等)而形成，則有可能導致壽命變短。Here, the conductive material such as aluminum (Al) which is a material of the film body portion 3 is generally susceptible to creep deformation. Therefore, if the biasing portion is formed using the same material as the film body portion 3 (for example, aluminum (Al) or the like), the life may be shortened.
因此，於圖10(b)所例示之情形時，使剛性最低之偏壓部14a使用與膜體部3相同之材料(例如鋁(Al)等)形成，使其他偏壓部14b使用相對於潛變變形之耐性高於鋁(Al)的材料而形成。Therefore, in the case illustrated in FIG. 10(b), the bias portion 14a having the lowest rigidity is formed using the same material as the film body portion 3 (for example, aluminum (Al) or the like), so that the other bias portion 14b is used in relation to The resistance to latent deformation is higher than that of aluminum (Al).
若偏壓部之剛性較低則難以引起潛變變形，故即便使偏壓部14a使用與膜體部3相同之材料(例如鋁(Al)等)形成亦可抑制壽命變短之情形。又，可將偏壓部14a作為接地部，故無須另外設置未圖示之接地部。因此，可減小佔據面積。When the rigidity of the biasing portion is low, it is difficult to cause the creeping deformation. Therefore, even if the biasing portion 14a is formed of the same material as the film body portion 3 (for example, aluminum (Al) or the like), the life can be suppressed. Moreover, since the biasing portion 14a can be used as the grounding portion, it is not necessary to separately provide a grounding portion (not shown). Therefore, the occupied area can be reduced.
再者，於圖10中，雖與圖1所例示之靜電致動器1之偏壓部之配置相同，但並不限定於此。In addition, in FIG. 10, although the arrangement of the biasing portion of the electrostatic actuator 1 illustrated in FIG. 1 is the same, it is not limited to this.
例如，亦可適用於圖7所例示之靜電致動器1a、1b、1c之情形。即，即便於靜電致動器1a、1b、1c之情形時亦可使偏壓部與膜體部使用相同材料形成。又，即便於靜電致動器1a、1b、1c之情形時，亦可使剛性最低之偏壓部使用與膜體部3相同之材料(例如鋁(Al)等)形成，使其他偏壓部使用相對於潛變變形之耐性高於鋁(Al)的材料而形成。For example, it can also be applied to the case of the electrostatic actuators 1a, 1b, 1c illustrated in Fig. 7. That is, even in the case of the electrostatic actuators 1a, 1b, and 1c, the biasing portion and the film body portion can be formed of the same material. Further, even in the case of the electrostatic actuators 1a, 1b, and 1c, the bias portion having the lowest rigidity can be formed using the same material as the film body portion 3 (for example, aluminum (Al) or the like), and other bias portions can be formed. It is formed using a material having higher resistance to latent deformation than aluminum (Al).
其次，例示本實施形態之靜電致動器之製造方法。Next, a method of manufacturing the electrostatic actuator of the present embodiment will be exemplified.
圖11係用以例示本實施形態之靜電致動器之製造方法之流程圖。Fig. 11 is a flow chart for illustrating a method of manufacturing the electrostatic actuator of the embodiment.
本實施形態之靜電致動器例如可藉由所謂之半導體製程(半導體裝置之製造技術)而製造。The electrostatic actuator of this embodiment can be manufactured, for example, by a so-called semiconductor process (manufacturing technique of a semiconductor device).
即，首先使用PVD(Physical Vapor Deposition，物理氣相沈積)法、CVD(Chemical Vapor Deposition，化學氣相沈積)法等，於使用絕緣性材料形成之基板100上成膜金屬等之導電性材料之膜。然後，使用微影技術將該膜加工為所需之形狀，藉此形成電極部2(步驟S1)。In other words, first, a conductive material such as a metal is formed on a substrate 100 formed of an insulating material by using a PVD (Physical Vapor Deposition) method or a CVD (Chemical Vapor Deposition) method. membrane. Then, the film is processed into a desired shape using lithography, whereby the electrode portion 2 is formed (step S1).
其次，使用PVD(Physical Vapor Deposition)法、CVD(Chemical Vapor Deposition)法等，以覆蓋電極部2之方式而形成未圖示之絕緣層(步驟S2)。接下來，於未圖示之絕緣層之表面形成具有所需之形狀之抗蝕劑膜(步驟S3)。如下述般、該抗蝕劑膜成為犧牲層(最終除去之層)。Then, an insulating layer (not shown) is formed to cover the electrode portion 2 by a PVD (Physical Vapor Deposition) method or a CVD (Chemical Vapor Deposition) method (step S2). Next, a resist film having a desired shape is formed on the surface of the insulating layer (not shown) (step S3). As described below, the resist film serves as a sacrificial layer (final removed layer).
接下來，以覆蓋抗蝕劑膜之方式使用PV D(Physical Vapor Deposition)法、CVD(Chemical Vapor Deposition)法等，成膜成為膜體部3之膜(步驟S4)。再者，如圖10(a)等所例示之靜電致動器般，於偏壓部與膜體部使用相同材料形成之情形時，亦成膜成為偏壓部之部分。Then, a film which becomes the film body portion 3 is formed by a PV D (Physical Vapor Deposition) method or a CVD (Chemical Vapor Deposition) method so as to cover the resist film (step S4). Further, as in the case of the electrostatic actuator exemplified in Fig. 10 (a) and the like, when the biasing portion and the film portion are formed of the same material, the film is also formed as a portion of the bias portion.
其次，使用微影技術形成膜體部3與孔部6(步驟S5)。Next, the film body portion 3 and the hole portion 6 are formed using a lithography technique (step S5).
再者，於偏壓部4與膜體部3使用相同材料形成之情形時亦形成偏壓部。Further, when the biasing portion 4 and the film body portion 3 are formed of the same material, a biasing portion is also formed.
其次，PVD(Physical Vapor Deposition)法、CVD(Chemical Vapor Deposition)法等，成膜成為偏壓部4之膜(步驟S6)。Then, a film formed by the bias portion 4 is formed by a PVD (Physical Vapor Deposition) method or a CVD (Chemical Vapor Deposition) method (step S6).
接下來，使用微影技術形成偏壓部4(步驟S7)。Next, the bias portion 4 is formed using lithography (step S7).
再者，視需要可進而形成用以使膜體部3成為接地電位之未圖示之接地部。Further, a ground portion (not shown) for causing the film body portion 3 to have a ground potential can be further formed as needed.
其次，使用灰化技術除去抗蝕劑膜(步驟S8)。Next, the resist film is removed using an ashing technique (step S8).
於抗蝕劑膜之除去後，於膜體部3之主面與電極部2之主面之間形成特定尺寸之間隙5。After the resist film is removed, a gap 5 of a specific size is formed between the main surface of the film body 3 and the main surface of the electrode portion 2.
再者，於膜體部3上形成有孔部6，故可經由孔部6而容易地除去抗蝕劑膜。Further, since the hole portion 6 is formed in the film body portion 3, the resist film can be easily removed through the hole portion 6.
根據以上所說明之實施形態，可提供一種與先前相比可降低吸附電壓、提高釋放電壓，動作穩定且具有可靠性之靜電致動器。According to the embodiment described above, it is possible to provide an electrostatic actuator which can reduce the adsorption voltage, increase the discharge voltage, and operate stably and with reliability as compared with the prior art.
儘管已描述某些實施例，但該等實施例僅作為實例而呈現，且並不意欲限制本發明之範疇。實際上，本文中描述之新穎實施例可以多種其他形式體現。此外，於不脫離本發明之精神的情況下，本文中描述之實施例之形式可進行各種省略、替代及變更。附隨申請專利範圍及其等效物意欲涵蓋此等形式或修改，其將屬於本發明之範疇及精神內。上述實施例可相互組合而加以執行。Although certain embodiments have been described, the embodiments are presented by way of example only and are not intended to limit the scope of the invention. Indeed, the novel embodiments described herein may be embodied in a variety of other forms. In addition, various omissions, substitutions and changes can be made in the form of the embodiments described herein without departing from the spirit of the invention. The scope of the invention and its equivalents are intended to cover such forms or modifications that fall within the scope and spirit of the invention. The above embodiments can be implemented in combination with each other.
例如，靜電致動器1、1a~1c等所具備之各要素之形狀、尺寸、材料、配置、數等並不限定於例示者，可進行適當變更。For example, the shape, size, material, arrangement, number, and the like of each element included in the electrostatic actuators 1, 1a to 1c, and the like are not limited to the examples, and can be appropriately changed.
又，圖1等所例示之靜電致動器可將膜體部3與電極部2之間之電容變化利用於開關等中，但並不限定於此。例如，亦可具備隔離之複數之信號用電極部，藉由膜體部3之接觸與隔離而進行開關等。Further, the electrostatic actuator illustrated in FIG. 1 and the like can use a change in capacitance between the film body portion 3 and the electrode portion 2 in a switch or the like, but is not limited thereto. For example, it is also possible to provide a plurality of signal electrode portions for isolation, and to perform switching or the like by contact and isolation of the film body 3.
又，亦可為不具備信號用電極部，而利用膜體部3之動作。例如，亦可利用於微光開關之切斷動作、如噴墨頭之液滴噴出頭之液滴噴出動作、掃描型探針顯微鏡之探針之動作、其他各種微機器之動作等。Moreover, the operation of the film body 3 may be employed without providing the signal electrode portion. For example, it can be used for the cutting operation of the micro light switch, the liquid droplet ejection operation of the liquid droplet ejection head of the ink jet head, the operation of the probe of the scanning probe microscope, and the operation of various other micromachines.
1、1a、1b、1c、50a~50e．．．靜電致動器1, 1a, 1b, 1c, 50a~50e. . . Electrostatic actuator
2．．．電極部2. . . Electrode part
3．．．膜體部3. . . Membrane body
3a．．．第1周緣部3a. . . 1st peripheral part
3b．．．第2周緣部3b. . . 2nd peripheral part
4．．．偏壓部4. . . Bias part
4a．．．連接部4a. . . Connection
4b．．．緩衝部4b. . . Buffer section
5．．．間隙5. . . gap
6．．．孔部6. . . Hole
14a．．．偏壓部14a. . . Bias part
14b．．．其他偏壓部14b. . . Other biasing
30．．．膜體部30. . . Membrane body
100．．．基板100. . . Substrate
S1~S8．．．步驟S1~S8. . . step
X、Y、Z．．．方向X, Y, Z. . . direction
圖1係用以例示本實施形態之靜電致動器之模式圖。圖1(a)係模式平面圖，圖1(b)係圖1(a)之A-A間之剖面圖。Fig. 1 is a schematic view showing an electrostatic actuator of the embodiment. Fig. 1(a) is a plan view, and Fig. 1(b) is a cross-sectional view taken along line A-A of Fig. 1(a).
圖2係用以例示本實施形態之靜電致動器之模式立體圖。圖2(a)係用以例示膜體部與偏壓部之模式立體圖，圖2(b)係圖2(a)之B部之模式放大圖。Fig. 2 is a schematic perspective view showing an electrostatic actuator of the embodiment. Fig. 2(a) is a schematic perspective view showing a film body portion and a biasing portion, and Fig. 2(b) is a schematic enlarged view of a portion B of Fig. 2(a).
圖3(a)、(b)係用以例示設有孔部時之效果之模式圖。3(a) and 3(b) are schematic diagrams illustrating an effect when a hole portion is provided.
圖4係用以例示本實施形態之靜電致動器之作用之模式圖表。Fig. 4 is a schematic diagram for illustrating the action of the electrostatic actuator of the embodiment.
圖5(a)~(e)係用以例示比較例之靜電致動器之模式圖。5(a) to 5(e) are schematic views for illustrating an electrostatic actuator of a comparative example.
圖6係用以例示靜電致動器之驅動特性之模式圖表。Fig. 6 is a schematic diagram illustrating a driving characteristic of an electrostatic actuator.
圖7(a)~(c)係用以例示其他實施形態之靜電致動器之模式圖。7(a) to 7(c) are schematic diagrams illustrating an electrostatic actuator of another embodiment.
圖8係用以例示相對於環境溫度之變化之穩定性之模式圖表。Figure 8 is a pattern diagram illustrating the stability of changes with respect to ambient temperature.
圖9(a)、(b)係用以表示環境溫度為200℃時之情形之模式圖。9(a) and 9(b) are schematic diagrams showing the situation when the ambient temperature is 200 °C.
圖10(a)、(b)係用以例示偏壓部之材料構成之模式圖。10(a) and 10(b) are schematic views showing the material configuration of the biasing portion.
圖11係用以例示本實施形態之靜電致動器之製造方法之流程圖。Fig. 11 is a flow chart for illustrating a method of manufacturing the electrostatic actuator of the embodiment.
1．．．靜電致動器1. . . Electrostatic actuator
2．．．電極部2. . . Electrode part
3．．．膜體部3. . . Membrane body
3a．．．第1周緣部3a. . . 1st peripheral part
3b．．．第2周緣部3b. . . 2nd peripheral part
4．．．偏壓部4. . . Bias part
4a．．．連接部4a. . . Connection
4b．．．緩衝部4b. . . Buffer section
5．．．間隙5. . . gap
6．．．孔部6. . . Hole
100．．．基板100. . . Substrate
X、Y、Z．．．方向X, Y, Z. . . direction
Claims (20)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009270772A JP4871389B2 (en) | 2009-11-27 | 2009-11-27 | Electrostatic actuator |
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| TW201131960A TW201131960A (en) | 2011-09-16 |
| TWI410038B true TWI410038B (en) | 2013-09-21 |
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| TW099139758A TWI410038B (en) | 2009-11-27 | 2010-11-18 | Electrostatic actuator |
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| Country | Link |
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| US (1) | US8749113B2 (en) |
| JP (1) | JP4871389B2 (en) |
| CN (1) | CN102185517B (en) |
| NL (1) | NL1038406C2 (en) |
| TW (1) | TWI410038B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5318135B2 (en) | 2011-03-16 | 2013-10-16 | 株式会社東芝 | Electrostatic actuator |
| EP2751837B1 (en) * | 2011-09-02 | 2020-07-22 | Cavendish Kinetics Inc. | Merged legs and semi-flexible anchoring for mems device |
| JP5784513B2 (en) * | 2012-01-13 | 2015-09-24 | 株式会社東芝 | MEMS device and manufacturing method thereof |
| JP2013230523A (en) | 2012-04-27 | 2013-11-14 | Toshiba Corp | Mems element |
| JP5881635B2 (en) * | 2013-03-25 | 2016-03-09 | 株式会社東芝 | MEMS equipment |
| KR102138339B1 (en) * | 2018-10-24 | 2020-07-27 | 주식회사 엠플러스 | Sound vibration actuator |
| CN114788305A (en) * | 2019-12-11 | 2022-07-22 | 络菲尔特有限责任公司 | Linear vibration actuator with moving coil and moving magnet |
| CN112911856B (en) * | 2021-01-18 | 2022-07-19 | 维沃移动通信有限公司 | Grounding structure and electronic equipment |
| US11831215B2 (en) * | 2021-05-06 | 2023-11-28 | Aac Microtech (Changzhou) Co., Ltd. | Linear vibration motor |
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- 2010-11-25 NL NL1038406A patent/NL1038406C2/en not_active IP Right Cessation
- 2010-11-26 US US12/954,806 patent/US8749113B2/en not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| NL1038406A (en) | 2011-05-30 |
| TW201131960A (en) | 2011-09-16 |
| NL1038406C2 (en) | 2011-06-30 |
| CN102185517A (en) | 2011-09-14 |
| US20110140570A1 (en) | 2011-06-16 |
| JP2011114988A (en) | 2011-06-09 |
| US8749113B2 (en) | 2014-06-10 |
| JP4871389B2 (en) | 2012-02-08 |
| CN102185517B (en) | 2014-11-05 |
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