TWI408253B - 光誘導無電鍍敷 - Google Patents
光誘導無電鍍敷 Download PDFInfo
- Publication number
- TWI408253B TWI408253B TW099119074A TW99119074A TWI408253B TW I408253 B TWI408253 B TW I408253B TW 099119074 A TW099119074 A TW 099119074A TW 99119074 A TW99119074 A TW 99119074A TW I408253 B TWI408253 B TW I408253B
- Authority
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- Taiwan
- Prior art keywords
- silver
- metal
- solar cell
- front side
- source
- Prior art date
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- 238000007772 electroless plating Methods 0.000 title claims description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
- 239000002184 metal Substances 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 53
- 238000007747 plating Methods 0.000 claims abstract description 30
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 22
- 239000000203 mixture Substances 0.000 claims abstract description 22
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 11
- 229910052709 silver Inorganic materials 0.000 claims description 33
- 239000004332 silver Substances 0.000 claims description 33
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 20
- -1 silver ions Chemical class 0.000 claims description 18
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical class B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 8
- LEQAOMBKQFMDFZ-UHFFFAOYSA-N glyoxal Chemical compound O=CC=O LEQAOMBKQFMDFZ-UHFFFAOYSA-N 0.000 claims description 8
- KZNICNPSHKQLFF-UHFFFAOYSA-N succinimide Chemical compound O=C1CCC(=O)N1 KZNICNPSHKQLFF-UHFFFAOYSA-N 0.000 claims description 8
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 claims description 7
- 229940071536 silver acetate Drugs 0.000 claims description 7
- 150000003839 salts Chemical class 0.000 claims description 6
- RYKLZUPYJFFNRR-UHFFFAOYSA-N 3-hydroxypiperidin-2-one Chemical compound OC1CCCNC1=O RYKLZUPYJFFNRR-UHFFFAOYSA-N 0.000 claims description 5
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims description 5
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 4
- ISAKRJDGNUQOIC-UHFFFAOYSA-N Uracil Chemical class O=C1C=CNC(=O)N1 ISAKRJDGNUQOIC-UHFFFAOYSA-N 0.000 claims description 4
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 229940015043 glyoxal Drugs 0.000 claims description 4
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 claims description 4
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 4
- 229960002317 succinimide Drugs 0.000 claims description 4
- DHCDFWKWKRSZHF-UHFFFAOYSA-N sulfurothioic S-acid Chemical compound OS(O)(=O)=S DHCDFWKWKRSZHF-UHFFFAOYSA-N 0.000 claims description 4
- TWFZGCMQGLPBSX-UHFFFAOYSA-N Carbendazim Natural products C1=CC=C2NC(NC(=O)OC)=NC2=C1 TWFZGCMQGLPBSX-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims description 3
- 229910000085 borane Inorganic materials 0.000 claims description 3
- 239000004202 carbamide Substances 0.000 claims description 3
- JNPZQRQPIHJYNM-UHFFFAOYSA-N carbendazim Chemical class C1=C[CH]C2=NC(NC(=O)OC)=NC2=C1 JNPZQRQPIHJYNM-UHFFFAOYSA-N 0.000 claims description 3
- 239000006013 carbendazim Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical group [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 claims description 3
- 235000011006 sodium potassium tartrate Nutrition 0.000 claims description 3
- FUSNOPLQVRUIIM-UHFFFAOYSA-N 4-amino-2-(4,4-dimethyl-2-oxoimidazolidin-1-yl)-n-[3-(trifluoromethyl)phenyl]pyrimidine-5-carboxamide Chemical compound O=C1NC(C)(C)CN1C(N=C1N)=NC=C1C(=O)NC1=CC=CC(C(F)(F)F)=C1 FUSNOPLQVRUIIM-UHFFFAOYSA-N 0.000 claims description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 150000003973 alkyl amines Chemical class 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- 229910001429 cobalt ion Inorganic materials 0.000 claims description 2
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 claims description 2
- 239000008121 dextrose Substances 0.000 claims description 2
- 239000008103 glucose Substances 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 239000012493 hydrazine sulfate Substances 0.000 claims description 2
- 229910000377 hydrazine sulfate Inorganic materials 0.000 claims description 2
- 229960004903 invert sugar Drugs 0.000 claims description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052753 mercury Inorganic materials 0.000 claims description 2
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 claims description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 2
- 229910001923 silver oxide Inorganic materials 0.000 claims description 2
- YPNVIBVEFVRZPJ-UHFFFAOYSA-L silver sulfate Chemical compound [Ag+].[Ag+].[O-]S([O-])(=O)=O YPNVIBVEFVRZPJ-UHFFFAOYSA-L 0.000 claims description 2
- 229910000367 silver sulfate Inorganic materials 0.000 claims description 2
- 150000004763 sulfides Chemical class 0.000 claims description 2
- 229940035893 uracil Drugs 0.000 claims description 2
- OPFOKGROZDGRMD-UHFFFAOYSA-N B.CCCCCCCCCC Chemical compound B.CCCCCCCCCC OPFOKGROZDGRMD-UHFFFAOYSA-N 0.000 claims 1
- 239000000138 intercalating agent Substances 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 6
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 5
- 239000000243 solution Substances 0.000 description 25
- 238000000151 deposition Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 238000009713 electroplating Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000006117 anti-reflective coating Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000006722 reduction reaction Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- YIROYDNZEPTFOL-UHFFFAOYSA-N 5,5-Dimethylhydantoin Chemical compound CC1(C)NC(=O)NC1=O YIROYDNZEPTFOL-UHFFFAOYSA-N 0.000 description 3
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 238000004876 x-ray fluorescence Methods 0.000 description 3
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- MOOYVEVEDVVKGD-UHFFFAOYSA-N oxaldehydic acid;hydrate Chemical compound O.OC(=O)C=O MOOYVEVEDVVKGD-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 239000005347 annealed glass Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000005844 autocatalytic reaction Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910010277 boron hydride Inorganic materials 0.000 description 1
- FRWDHMWMHYXNLW-UHFFFAOYSA-N boron(3+) Chemical compound [B+3] FRWDHMWMHYXNLW-UHFFFAOYSA-N 0.000 description 1
- 235000013877 carbamide Nutrition 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 125000005594 diketone group Chemical group 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N hydrofluoric acid Substances F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 description 1
- 239000001476 sodium potassium tartrate Substances 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1664—Process features with additional means during the plating process
- C23C18/1667—Radiant energy, e.g. laser
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Description
本發明大致關於一種對光伏電池(包括矽太陽能電池)無電鍍敷金屬接點之方法。
太陽能電池為光伏電池或模組,其將日光直接轉化成電力。光伏(PV)電池係由半導體材料製成,最常見為矽。在光(紫外線、可見光與紅外線)撞擊電池時,其特定部分被吸收至半導體材料內,使得吸收光之能量轉移至半導體且產生電流。將金屬接點置於PV電池上下,則電流可被牽引至外部使用。電流與電池之電壓一起界定太陽能電池可產生之瓦數。
半導體光伏電池包含大面積p-n接面,在此光吸收造成電子-電洞對之製造。電子與電洞移至接面之相反側;使得過量負電荷在摻n側累積且過量正電荷在摻p側累積。為了收集電流以產生電力,其必須製造pn接面兩側對外部電路之電接點。接點一般呈現與裝置歐姆接觸之金屬態樣。理想之接點態樣具有高導電度以使電阻損失最小,對基板之電接觸良好以有效率地收集電流,及高黏附性以確保機械安定性。金屬態樣係設計成提供低電阻路徑以收集在電池表面上之任何位置處產生之電流,同時使被金屬攔截之入射輻射量、因此造成電流產生之損失減至最小。
矽(特別是其結晶形式)為用於製造太陽能電池之常見材料。大部分太陽能電池係由摻硼與磷以製造p-型/n-型接面之結晶矽製成。多晶矽可用於太陽能電池製造以減低製造成本,雖然所得電池未必如單晶矽電池般有效率。又為了嚐試降低製造成本,亦可使用非晶矽(無結晶結構)。用於製造太陽能電池之其他材料包括砷化鎵、二硒化銅銦與碲化鎘。
矽太陽能電池之典型排列如下:
(a) 背接點;
(b) P-型Si;
(c) N-型Si;
(d) 抗反射塗層;
(e) 接點網;及
(f) 覆蓋玻璃。
因為矽極具反射性,其一般將抗反射塗層塗佈在電池頂部以降低反射損失。然後一般將玻璃面板應用於抗反射層上以保護電池隔離元件。
習知太陽能電池可使用結晶矽晶圓製造。Si(+4)晶圓開始為具硼(+3)摻雜劑之p-型。為了較佳地捕捉光,其可將晶圓以氫氧化物或硝酸/氫氟酸紋路化,使得光歪斜地反射至矽中。p-n接面係使用蒸氣沉積擴散而形成,而且又在真空設備中塗佈表面鈍化層以賦與氮化矽膜。
一種矽太陽能電池製造之標準方法係將矽晶圓前側覆以抗反射鈍化層,其一般包含氮化矽。此氮化矽用於使電池吸收光(未反射)之百分比最大、及將表面鈍化(防止電子在表面處重組)之雙重目的,如此增加電池效率。
其必須形成太陽能電池接點,藉此在背表面上製造全面積金屬接點,而且在前表面上形成由細微「手指」與較大之「匯流條」製成之柵格狀金屬接點。在形成太陽能電池導體之後,將多個太陽能電池以扁線或金屬絲串連地(及/或平行地)互連,而且組合成模組或「太陽板」。完成之太陽板產品一般在前方有一片退火玻璃且在後方有聚合物封包以保護其隔離環境。
矽為太陽能電池板製造用之最常用材料。第1圖顯示典型矽太陽能電池之具有前側金屬匯流條12與金屬線14的前側10、及具有背側金屬匯流條22的背側20。第2圖顯示典型矽太陽能電池之橫切面圖,其具有抗反射塗層32、摻n矽層34、與摻p矽層36。矽可為單晶或多晶矽(舉例而非限制)。前側10之金屬線14收集光誘導之電流。前側匯流條12收集來自多條金屬線14或「手指」之電流。類似前側,電池之背側20一般具有一組匯流條22;然而背側20不必讓光穿透。前側匯流條12與背側匯流條22可串連地連接電池使其模組化。
設計前側金屬態樣時必須考量競爭因素。裝置之前側必須讓光穿透,所以為了使遮蔽損失最小,金屬軌跡應覆蓋最小可行面積。另一方面,由於前側之片電阻可能相當高(每平方約50至100歐姆),有效率之電流收集來自於最大可行表面積覆蓋,若覆蓋率太低則導致電阻損失。
其已使用多種方法形成金屬態樣,包括導電漿之網版印刷、噴墨、及籽層(seed layer)上電鍍。一種常用方法為含玻璃原料之銀漿的網版印刷,繼而在約800℃之燃燒步驟,此時漿燃燒通過抗反射塗層(若有)。雖然此方法提供具合理的良好之電接觸、導電度與黏附性的導電態樣,性能可再藉由將額外金屬沉積在導電態樣上而進一步改良。
在另一種用以形成前側導電態樣之方法中,其將金屬自可溶性金屬離子之溶液沉積在於抗反射塗層中形成線與匯流條的態樣。其已使用多種方法形成態樣,如微影術繼而蝕刻、機械雕繪、或雷射成像。此方法敘述於國際公告(International Publication)第WO 2005/083799號。
自可溶性金屬離子之溶液沉積金屬係藉其中發生之氧化及還原反應之電化學機制。廣義言之,將金屬自溶液沉積在基板上有三種不同之機制:
(1) 置換(亦已知為電鍍)沉積為藉由將電子自較不貴重金屬轉移至較貴重金屬使金屬在較不貴重金屬基板上之沉積。其結果造成較貴重金屬之沉積及較不貴重金屬基板之溶解。然而由於在較不貴重基板被完全覆蓋時,沉積即中止,此方法因沉積物之厚度有限而受限。其亦消耗一部分之基板。
(2) 電解鍍敷為藉外部電流來源誘導氧化及還原。此方法提供厚度不受限之快速沉積速率。然而其必須以電連接基板。
(3) 自動催化(亦已知為無電鍍敷)沉積為藉由在溶液中之還原劑將金屬離子還原,其中沉積僅在具催化活性表面上發生。此方法排除外部電源之需求。然而實務上此方法遭受數個缺點。首先由於溶液先天為熱力學上不安定,此方法可能難以控制;其可能隨金屬沉澱進行自發分解,除非極為小心地將系統最適化。如此進而限制沉積速率,其可能非常緩慢。特定言之,在此技術領域已知自動催化鍍銀溶液為高度不安定。
為了解決這些問題,先行技術已建議各種利用例如光誘導電壓進行金屬沉積而電鍍光伏裝置之方法。
Durkee之美國專利第4,144,139號(其標的在此全部倂入作為參考)敘述一種將電接點鍍敷在太陽能電池表面上之方法,其係藉由將電池浸泡於含金屬離子之電解質溶液,及使太陽能電池之表面曝光使得在裝置之陽極表面上發生金屬鍍敷。其將背(陽極)側以厚耗蝕銀層覆蓋,使得在照射裝置時銀自陽極背側溶解且沉積在陰極前側上。雖然已知含氰化物銀電解質產生優良之鍍敷結果,使用氰化物由於安全性及環境考量而不佳。
Grenon之美國專利第4,251,327號(其標的在此全部倂入作為參考)敘述一種類似美國專利第4,144,139號之鍍敷方法。此外,此專利敘述一種排列,其中將裝置之陰極背側附著DC電源之負端,及將正端附著溶液中之銀電極,使得在適當地調整電流時,在背側上沉積或腐蝕均不發生。其又使用含氰化物銀鍍敷溶液。此排列示於第3圖。
Holdermann之美國專利第5,882,435號(其標的在此全部倂入作為參考)敘述一種其中藉金屬(如銅或銀)之光誘導沉積強化光伏電池上印刷金屬前側態樣的方法。背(陽極)側包括印刷耗蝕金屬漿,使得藉由在照射裝置時將金屬自背側溶解,同時沉積在前側上而維持電中性。
Allardyce之美國專利申請公開第2008/0035489號(其標的在此全部倂入作為參考)敘述一種對光伏電池鍍敷電接點之方法,其中將裝置在浸泡於包含銀離子、至少一種含硝基化合物、界面活性劑、胺基化合物、及至少一種胺基酸或磺酸之銀鍍敷溶液時曝光。然而將光伏裝置金屬化之「光誘導鍍敷方法」係與前述4,144,139及4,21,327號專利所述方法相同或類似,而且遭受相同之缺點。
Morrissey之美國專利申請公開第2007/0151863號(其標的在此全部倂入作為參考)敘述一種包含乙內醯脲或經取代乙內醯脲之錯合物形式銀、電解質、及2,2’-聯吡啶的非氰化物銀電鍍組成物。
Asakawa之美國專利第5,601,696號(其標的在此全部倂入作為參考)敘述一種含乙內醯脲或經取代乙內醯脲之錯合物形式銀的無氰化物銀電鍍浴。
Hradil等人之美國專利第4,126,524號(其標的在此全部倂入作為參考)揭示一種含錯合有機二羧酸之醯亞胺(如琥珀醯亞胺)之銀的無氰化物銀電鍍溶液。
Hradil等人之美國專利第4,246,077號(其標的在此全部倂入作為參考)敘述一種含錯合吡咯啶-2,5-二酮(琥珀醯亞胺)或3-吡咯啉-2,5-二酮(順丁烯二醯亞胺)之銀的無氰化物銀電鍍溶液。
Mandich等人之美國專利第5,322,553號(其標的在此全部倂入作為參考)敘述一種包含銀陽離子、硫代硫酸鹽與亞硫酸鹽之無氰化物無電銀鍍敷溶液,此專利聲稱較傳統之銀鍍敷溶液有較佳之鍍敷速率及溶液穩定度。
無電銀鍍敷亦遭受數個缺點。例如已知此浴為高度不安定而易發生分解,由於沉澱造成銀損失,及有限之浴壽命。又鍍敷速率在合適安定性所需條件下通常非常緩慢。
較快之鍍敷速率可藉電鍍而得,其包括先行技藝所述之光誘導鍍敷,其中外部電源提供電流給裝置。然而附著之電連接因其可造成易碎之矽太陽能電池破損而可能有所問題。
因此希望提供一種可有較快之鍍敷速率,其係藉電鍍敷實現但不造成矽太陽能電池因附著電連接而破損,及亦使所示無電銀鍍敷之缺點最小的鍍敷方法。
本發明使用一種包括化學還原劑之無電鍍敷溶液及方法解決這些缺點。本發明之改良無電鍍敷溶液在用於對光伏電池鍍敷金屬時係藉光致動。裝置不必電接觸。
本發明之一個目的為提供一種藉自動催化法對光伏裝置鍍敷金屬導體的方法及組成物,其包括化學還原劑。
本發明之另一個目的為提供一種藉自動催化法對光伏裝置鍍敷金屬導體之方法及組成物,其係藉光致動。
關於此點,在一個具體實施例中,本發明大致關於一種用於對光伏太陽能電池鍍敷金屬接點之組成物,此組成物包含:
a)一種可溶性銀離子之來源;及
b)一種還原劑。
在另一個具體實施例中,本發明大致關於一種將光伏太陽能電池金屬化以在其上沉積厚金屬層之方法,該光伏太陽能電池具有前側及背側,而且該前側於其上具有金屬態樣,此方法包含以下步驟:
a)使光伏太陽能電池接觸一種包含以下之無電鍍敷組成物:
i) 一種可溶性銀離子之來源;及
ii) 一種還原劑;然後
b)將光伏太陽能電池以來自光源之輻射能量照射,其中太陽能電池之前側與背側帶相反之電荷,及將來自無電鍍敷溶液之金屬離子鍍敷在太陽能電池前側之金屬態樣上,藉此在其上沉積厚的無電金屬層。
使用此方法可將任何金屬自其離子之水溶液沉積在太陽能電池前側上,其條件為金屬之還原電位大於水。由於其高導電度,較佳之金屬包括銅與銀,特別是銀。
本發明大致關於一種藉自動催化法將金屬導體鍍敷在光伏裝置上之方法及組成物,其係藉光致動。本發明包括一種化學還原劑,其排除電接觸或鍍敷金屬導體用耗蝕層之需求,而且至少實質上排除光伏裝置背側之陽極腐蝕。
在一個具體實施例中,本發明之鍍敷組成物包括:
a)一種可溶性銀離子之來源;及
b)一種還原劑。
幾乎任何含銀(I)化合物均可用於本發明之組成物。可溶性銀離子之來源可為氧化銀、硝酸銀、甲磺酸銀、乙酸銀、硫酸銀、或任何其他之銀鹽(舉例而非限制)。在一個具體實施例中,可溶性銀離子之來源較佳為乙酸銀或甲磺酸銀。在一個較佳具體實施例中,可溶性銀離子之來源係以約15至約35克/公升之濃度存在於本發明之無電鍍敷組成物。
至少一種還原劑可包括甲醛、葡萄糖、右旋糖、乙二醛、硝酸轉化糖、肼或肼硫酸鹽、醛醣酸、醛醣內酯、酒石酸鹽(亦已知為「洛歇爾鹽(Rochelle salt)」)、鈷離子、硫化物鹽、亞硫酸鹽、硫代硫酸鹽、次磷酸鹽、氫化硼鹽、二甲胺或其他烷基胺硼烷、肼硼烷、氰基氫化硼鹽(舉例而非限制)。此技術領域已知之其他還原劑亦可用於本發明。在一個具體實施例中,還原劑為洛歇爾鹽或乙二醛或其鹽。在一個較佳具體實施例中,至少一種還原劑係以約15至約60克/公升之濃度存在於本發明之無電鍍敷組成物。
其可加入選用錯合劑以溶解及安定銀陽離子,而且螯合可能存在之金屬雜質。已知之銀錯合物包括氰化物、琥珀醯亞胺或經取代琥珀醯亞胺、乙內醯脲或經取代乙內醯脲、尿嘧啶、硫代硫酸鹽、與胺(舉例而非限制)。在一個具體實施例中,錯合劑為乙內醯脲或經取代乙內醯脲。如果使用,則錯合劑可以約40至約80克/公升之濃度存在於本發明之無電鍍敷組成物。
最後本發明之組成物亦可包括各種表面活化劑、細晶劑與界面活性劑。例如可將聚乙二亞胺、聚乙二醇、2,2’-聯吡啶、與硫脲(舉例而非限制)加入本發明之組成物。
溶液之pH較佳為使用合適之pH調整劑調整至約7.5至約9.5之間。其可使用氫氧化鉀或氫氧化鈉(舉例而非限制)調整溶液之pH。
如第4圖所描述,本發明大致關於一種將光伏太陽能電池金屬化以在其上沉積金屬層之方法,該光伏太陽能電池具有前側與背側,而且該前側於其上具有金屬態樣,此方法包含以下步驟:
a)使光伏太陽能電池接觸一種包含以下之無電鍍敷組成物:
i) 一種可溶性銀離子之來源;及
ii) 一種還原劑;然後
b)將光伏太陽能電池以來自光源之輻射能量照射,其中太陽能電池之前側與背側帶相反之電荷,及將來自無電鍍敷溶液之金屬離子鍍敷在太陽能電池前側之金屬態樣上,藉此在其上沉積無電金屬層。
如以上所討論,太陽能電池前側之金屬態樣通常包含多條電流收集線及匯流條。
本發明之光源係安置而以輻射能量照射光伏太陽能電池。各種光源實務上均可用於本發明,包括例如石英鹵素燈、白熾燈與汞燈。
使光伏電池接觸無電鍍敷組成物之步驟一般包含將光伏電池浸泡於無電鍍敷組成物。在本發明之實務中,其不必對外部電源電接觸。亦不必將金屬自裝置進一步耗蝕性溶解。
雖然不希望受理論限制,本發明人相信陰極金屬離子之光致動還原有兩種可能機制。首先可將電子給予直接來自陰極之金屬陽離子,造成金屬原子沉積在陰極上。殘餘正電荷係保留在陽極(電池之背側)上,在此其可與還原劑反應。或者陰極催化來自化學還原劑之電子給予金屬,造成金屬離子沉積在陰極上。亦可能發生此兩種機制之組合。任一機構之結果相同,即在金屬陰極上選擇性地發生金屬之光誘導沉積而不需外部電源電接觸且背側無陽極腐蝕。
如下製造溶液:
72.6克/公升 5,5-二甲基乙內醯脲
20.2克/公升 乙酸銀
14.0克/公升 甲磺酸鉀
30.0克/公升 酒石酸鈉鉀(「洛歇爾鹽」)
加入KOH使pH=9.1
如下製造溶液:
72.6克/公升 5,5-二甲基乙內醯脲
20.2克/公升 乙酸銀
18.2克/公升 乙醛酸水合物
72.7克/公升 甲磺酸鉀
加入NaOH使pH=9.2
如下製造溶液:
48.0克/公升 乙內醯脲
10.3克/公升 甲磺酸
32.0克/公升 硼酸
28.7克/公升 甲磺酸銀
54.0克/公升 乙醛酸水合物
加入KOH使pH=8.8
為了比較,如下無還原劑之製造溶液:
72.6克/公升 5,5-二甲基乙內醯脲
20.2克/公升 乙酸銀
加入NaOH使pH=9.1
以這些溶液鍍敷第1及第2圖描述之太陽能電池。前側之線係由印刷銀漿組成且平均約82微米寬,如上下光學顯微鏡所測量。背側之匯流條係由印刷銀漿組成且約4.5微米厚,如X-射線螢光(XRF)所測量。
將溶液在透明玻璃燒杯中加熱至45℃。將太陽能電池片浸泡8分鐘,同時使用250瓦燈自約5吋之距離照射前側。然後將電池以去離子水洗滌及乾燥。藉上下光學顯微鏡測量處理後線寬,及藉XRF測量背側匯流條厚度。
其可見到實例1與2發生之線寬大為增加,而比較例1之線寬未增加。
表1顯示各使用光學顯微鏡及XRF之前側線寬及背側匯流條厚度測量的結果。
其觀察到實例1-3之前側線寬大為增加,而比較例1未增加。此外實例1-3之背側匯流條厚度有淨增加,而比較例1有淨減小,表示在溶液中無還原劑時發生匯流條之陽極腐蝕
10...前側
12...前側金屬匯流條
14...金屬線
20...背側
22...背側金屬匯流條
32...抗反射塗層
34...摻n矽層
36...摻p矽層
第1圖顯示矽太陽能電池之前側與背側。
第2圖顯示矽太陽能電池之橫切面。
第3圖顯示先行技術光誘導電解鍍敷法之一個具體實施例。
第4圖顯示依照本發明之光誘導無電鍍敷法的一個具體實施例。
Claims (17)
- 一種將光伏太陽能電池金屬化以在其上沉積金屬層之方法,該光伏太陽能電池具有前側及背側,而且該前側於其上具有包含金屬之態樣,此方法包含以下步驟:a)使光伏太陽能電池接觸一種包含以下之無電鍍敷組成物:i)一種可溶性銀離子之來源;及ii)一種還原劑;然後b)將光伏太陽能電池以來自光源之輻射能量照射,其中太陽能電池之前側與背側帶相反之電荷,及將來自無電鍍敷溶液之金屬離子鍍敷在太陽能電池前側之金屬態樣上,其中在鍍敷期間太陽能電池未電連接外部電源。
- 如申請專利範圍第1項之方法,其中無電鍍敷組成物包含一種銀離子用錯合劑。
- 如申請專利範圍第1項之方法,其中可溶性銀離子之來源係選自氧化銀、硝酸銀、甲磺酸銀、乙酸銀、硫酸銀及以上之一或多種之組合。
- 如申請專利範圍第3項之方法,其中可溶性銀離子之來源為乙酸銀。
- 如申請專利範圍第3項之方法,其中可溶性銀離子之來源為甲磺酸銀。
- 如申請專利範圍第1項之方法,其中可溶性銀離子之來 源的濃度為15至35克/公升之間。
- 如申請專利範圍第1項之方法,其中還原劑係選自甲醛、葡萄糖、右旋糖、乙二醛、硝酸轉化糖、肼或肼硫酸鹽、醛醣酸、醛醣內酯、洛歇爾鹽、鈷離子、硫化物鹽、亞硫酸鹽、硫代硫酸鹽、次磷酸鹽、氫化硼鹽、烷基胺硼烷、肼硼烷、氰基氫化硼鹽及以上之一或多種之組合。
- 如申請專利範圍第7項之方法,其中還原劑為洛歇爾鹽(Rochelle salt)。
- 如申請專利範圍第7項之方法,其中還原劑為乙二醛或其鹽。
- 如申請專利範圍第1項之方法,其中還原劑之濃度為15至60克/公升之間。
- 如申請專利範圍第2項之方法,其中錯合劑係選自氰化物、琥珀醯亞胺或經取代琥珀醯亞胺、乙內醯脲或經取代乙內醯脲、尿嘧啶、硫代硫酸鹽、胺及以上之一或多種之組合。
- 如申請專利範圍第11項之方法,其中錯合劑為乙內醯脲或經取代乙內醯脲。
- 如申請專利範圍第2項之方法,其中錯合劑之濃度為40至80克/公升之間。
- 如申請專利範圍第1項之方法,其中在太陽能電池前側上包含金屬之態樣包含印刷於其上之電流收集線及匯流條。
- 如申請專利範圍第14項之方法,其中包含金屬之態樣 包含印刷銀漿。
- 如申請專利範圍第1項之方法,其中光源係選自石英鹵素燈、白熾燈與汞燈。
- 如申請專利範圍第1項之方法,其中使光伏電池接觸無電鍍敷組成物之步驟包含將光伏電池浸泡於無電鍍敷組成物。
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US8337942B2 (en) * | 2009-08-28 | 2012-12-25 | Minsek David W | Light induced plating of metals on silicon photovoltaic cells |
US8795502B2 (en) * | 2010-05-12 | 2014-08-05 | International Business Machines Corporation | Electrodeposition under illumination without electrical contacts |
JP5699794B2 (ja) * | 2010-06-23 | 2015-04-15 | 上村工業株式会社 | アルミニウム酸化皮膜用除去液及びアルミニウム又はアルミニウム合金の表面処理方法 |
US8969122B2 (en) * | 2011-06-14 | 2015-03-03 | International Business Machines Corporation | Processes for uniform metal semiconductor alloy formation for front side contact metallization and photovoltaic device formed therefrom |
CN103996752B (zh) * | 2014-06-10 | 2016-04-13 | 中节能太阳能科技(镇江)有限公司 | 一种太阳能电池正电极栅线制备方法 |
CN111826692A (zh) * | 2020-07-08 | 2020-10-27 | 苏州太阳井新能源有限公司 | 一种光伏电池光诱导或光辅助电镀的方法 |
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US8722142B2 (en) | 2014-05-13 |
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JP5442869B2 (ja) | 2014-03-12 |
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