JP5442869B2 - 光誘起無電解めっき - Google Patents
光誘起無電解めっき Download PDFInfo
- Publication number
- JP5442869B2 JP5442869B2 JP2012526746A JP2012526746A JP5442869B2 JP 5442869 B2 JP5442869 B2 JP 5442869B2 JP 2012526746 A JP2012526746 A JP 2012526746A JP 2012526746 A JP2012526746 A JP 2012526746A JP 5442869 B2 JP5442869 B2 JP 5442869B2
- Authority
- JP
- Japan
- Prior art keywords
- silver
- solar cell
- metal
- grams
- liter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000007772 electroless plating Methods 0.000 title claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 57
- 239000002184 metal Substances 0.000 claims description 57
- 238000000034 method Methods 0.000 claims description 52
- 229910052709 silver Inorganic materials 0.000 claims description 33
- 239000004332 silver Substances 0.000 claims description 33
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 30
- 238000007747 plating Methods 0.000 claims description 27
- 239000000203 mixture Substances 0.000 claims description 21
- 239000003638 chemical reducing agent Substances 0.000 claims description 20
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims description 14
- 229940091173 hydantoin Drugs 0.000 claims description 13
- 229910021645 metal ion Inorganic materials 0.000 claims description 10
- KZNICNPSHKQLFF-UHFFFAOYSA-N succinimide Chemical compound O=C1CCC(=O)N1 KZNICNPSHKQLFF-UHFFFAOYSA-N 0.000 claims description 10
- 239000008139 complexing agent Substances 0.000 claims description 9
- LEQAOMBKQFMDFZ-UHFFFAOYSA-N glyoxal Chemical compound O=CC=O LEQAOMBKQFMDFZ-UHFFFAOYSA-N 0.000 claims description 8
- 150000001469 hydantoins Chemical class 0.000 claims description 7
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 claims description 7
- 229940071536 silver acetate Drugs 0.000 claims description 7
- -1 silver ions Chemical class 0.000 claims description 7
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims description 6
- WJRBRSLFGCUECM-UHFFFAOYSA-N hydantoin Chemical class O=C1CNC(=O)N1 WJRBRSLFGCUECM-UHFFFAOYSA-N 0.000 claims description 6
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 claims description 6
- 235000011006 sodium potassium tartrate Nutrition 0.000 claims description 6
- RYKLZUPYJFFNRR-UHFFFAOYSA-N 3-hydroxypiperidin-2-one Chemical compound OC1CCCNC1=O RYKLZUPYJFFNRR-UHFFFAOYSA-N 0.000 claims description 5
- 229960002317 succinimide Drugs 0.000 claims description 5
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 4
- ISAKRJDGNUQOIC-UHFFFAOYSA-N Uracil Chemical class O=C1C=CNC(=O)N1 ISAKRJDGNUQOIC-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 claims description 4
- 229940015043 glyoxal Drugs 0.000 claims description 4
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 claims description 4
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- DHCDFWKWKRSZHF-UHFFFAOYSA-L thiosulfate(2-) Chemical class [O-]S([S-])(=O)=O DHCDFWKWKRSZHF-UHFFFAOYSA-L 0.000 claims description 3
- FUSNOPLQVRUIIM-UHFFFAOYSA-N 4-amino-2-(4,4-dimethyl-2-oxoimidazolidin-1-yl)-n-[3-(trifluoromethyl)phenyl]pyrimidine-5-carboxamide Chemical compound O=C1NC(C)(C)CN1C(N=C1N)=NC=C1C(=O)NC1=CC=CC(C(F)(F)F)=C1 FUSNOPLQVRUIIM-UHFFFAOYSA-N 0.000 claims description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- 229910001429 cobalt ion Inorganic materials 0.000 claims description 2
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 claims description 2
- 239000008121 dextrose Substances 0.000 claims description 2
- 239000008103 glucose Substances 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 239000012493 hydrazine sulfate Substances 0.000 claims description 2
- 229910000377 hydrazine sulfate Inorganic materials 0.000 claims description 2
- 150000002596 lactones Chemical class 0.000 claims description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052753 mercury Inorganic materials 0.000 claims description 2
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 claims description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical class O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 2
- 229910001923 silver oxide Inorganic materials 0.000 claims description 2
- YPNVIBVEFVRZPJ-UHFFFAOYSA-L silver sulfate Chemical compound [Ag+].[Ag+].[O-]S([O-])(=O)=O YPNVIBVEFVRZPJ-UHFFFAOYSA-L 0.000 claims description 2
- 229910000367 silver sulfate Inorganic materials 0.000 claims description 2
- 235000000346 sugar Nutrition 0.000 claims description 2
- 150000004763 sulfides Chemical class 0.000 claims description 2
- 229940048910 thiosulfate Drugs 0.000 claims description 2
- 150000004764 thiosulfuric acid derivatives Chemical class 0.000 claims description 2
- 229940035893 uracil Drugs 0.000 claims description 2
- 150000008163 sugars Chemical class 0.000 claims 1
- 239000000243 solution Substances 0.000 description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 239000010410 layer Substances 0.000 description 14
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- 238000009713 electroplating Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 238000001556 precipitation Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000006117 anti-reflective coating Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000010953 base metal Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000006722 reduction reaction Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- YIROYDNZEPTFOL-UHFFFAOYSA-N 5,5-Dimethylhydantoin Chemical compound CC1(C)NC(=O)NC1=O YIROYDNZEPTFOL-UHFFFAOYSA-N 0.000 description 2
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- MOOYVEVEDVVKGD-UHFFFAOYSA-N oxaldehydic acid;hydrate Chemical compound O.OC(=O)C=O MOOYVEVEDVVKGD-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- XWIJIXWOZCRYEL-UHFFFAOYSA-M potassium;methanesulfonate Chemical compound [K+].CS([O-])(=O)=O XWIJIXWOZCRYEL-UHFFFAOYSA-M 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- FRWDHMWMHYXNLW-UHFFFAOYSA-N boron(3+) Chemical compound [B+3] FRWDHMWMHYXNLW-UHFFFAOYSA-N 0.000 description 1
- RAXSQXIANLNZAF-UHFFFAOYSA-N boron;hydrazine Chemical compound [B].NN RAXSQXIANLNZAF-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229940074439 potassium sodium tartrate Drugs 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- YDVMDJMNQSRVIH-UHFFFAOYSA-N pyrrolidine-2,5-dione Chemical compound O=C1CCC(=O)N1.O=C1CCC(=O)N1 YDVMDJMNQSRVIH-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 229940054334 silver cation Drugs 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-L sulfite Chemical class [O-]S([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-L 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1664—Process features with additional means during the plating process
- C23C18/1667—Radiant energy, e.g. laser
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
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Description
(a)バック接点;
(b)P型Si;
(c)N型Si;
(d)反射防止コーティング;
(e)接触グリッド;及び
(f)カバーガラス。
(1)ガルバニー析出としても知られる置換析出では、卑金属から貴金属への電子の移動に伴って卑金属基材上に金属が析出して、貴金属の析出及び卑金属基材の溶解が生じる。しかし、この方法は、卑金属基材が完全に被覆された時点で析出が停止するので、析出する厚みに限界があるという点で制限を受ける。また、基材の一部が消費される。
(2)電解めっきでは、外部電流源を用いて酸化及び還元が誘導される。この方法は、厚みの限界なしに迅速に金属を析出させることができる。しかし、基材と電気接続しなければならない。
(3)無電解めっきとしても知られている自己触媒では、溶液中に還元剤が含まれていることによって化学的に金属イオンの還元が生じ、触媒的に活性である表面上でのみ析出が生じる。この方法では、外部電源が必要ない。しかし、実際には、この方法は幾つかの問題点を抱えている。第1に、溶液は本質的に熱力学的に不安定であるのでプロセスを制御することが困難である場合があり、細心の注意を払って系を最適化しない限り、金属の沈殿と共に自発的分解が生じることがある。これが、析出速度を制限して非常に低下させる場合がある。特に、自己触媒銀めっき溶液は、非常に不安定であることが当該技術分野において周知である。
a)可溶性銀イオン源と、
b)還元剤と
を含む組成物に関する。
a)i)可溶性銀イオン源、及び
ii)還元剤
を含む無電解めっき組成物と前記光起電太陽電池とを接触させる工程と;次いで
b)光源からの放射エネルギーに前記光起電太陽電池を曝す工程と
を含み、
前記太陽電池の前側及び裏側が逆の極性に帯電し、前記無電解めっき溶液の金属イオンが前記太陽電池の前側の金属パターン上にめっきされて、無電解金属の厚い層が前記金属パターン上に析出する方法に関する。
a)可溶性銀イオン源と、
b)還元剤と
を含む。
a)i)可溶性銀イオン源、及び
ii)還元剤
を含む無電解めっき組成物と前記光起電太陽電池とを接触させる工程と;次いで
b)光源からの放射エネルギーに前記光起電太陽電池を曝す工程と
を含み、
前記太陽電池の前側及び裏側が逆の極性に帯電し、前記無電解めっき溶液の金属イオンが前記太陽電池の前側の金属パターン上にめっきされて、無電解金属の層が前記金属パターン上に析出する方法に関する。
以下の通り溶液を作製した:
72.6グラム/リットル 5,5−ジメチルヒダントイン
20.2グラム/リットル 酢酸銀
14.0グラム/リットル メタンスルホン酸カリウム
30.0グラム/リットル 酒石酸ナトリウムカリウム(「ロッシェル塩」)
KOHを添加してpH=9.1にした。
以下の通り溶液を作製した:
72.6グラム/リットル 5,5−ジメチルヒダントイン
20.2グラム/リットル 酢酸銀
18.2グラム/リットル グリオキシル酸水和物
72.7グラム/リットル メタンスルホン酸カリウム
NaOHを添加してpH=9.2にした。
以下の通り溶液を作製した:
48.0グラム/リットル ヒダントイン
10.3グラム/リットル メタンスルホン酸
32.0グラム/リットル ホウ酸
28.7グラム/リットル メタンスルホン酸銀
54.0グラム/リットル グリオキシル酸水和物
KOHを添加してpH=8.8にした。
比較のために、還元剤を含まない溶液を以下の通り作製した:
72.6グラム/リットル 5,5’−ジメチルヒダントイン
20.2グラム/リットル 酢酸銀
NaOHを添加してpH=9.1にした。
Claims (16)
- 光起電太陽電池を金属化して前記光起電太陽電池上に金属の層を析出させる方法であって、前記光起電太陽電池が前側と裏側とを有し、前記前側が金属を含むパターンを有し、
a)i)可溶性銀イオン源、及び
ii)ホルムアルデヒド、グルコース、デキストロース、グリオキサール、硝酸により転化された糖、ヒドラジン、硫酸ヒドラジン、アルドン酸、アルドン酸ラクトン、ロッシェル塩、コバルトイオン、硫化物塩、亜硫酸塩、チオ硫酸塩、次亜リン酸塩、ヒドリドホウ酸塩、アルキルアミンボラン、ヒドラジンボラン、シアノヒドリドホウ酸塩、及びこれらのうちの1以上の組み合わせからなる群より選択される還元剤
を含む無電解めっき組成物と前記光起電太陽電池とを接触させる工程と;次いで
b)光源からの放射エネルギーに前記光起電太陽電池を曝す工程と
を含み、
前記太陽電池の前側及び裏側が逆の極性に帯電し、前記無電解めっき溶液の金属イオンが前記太陽電池の前側の金属パターン上にめっきされ、前記太陽電池が、めっき中、外部電源に電気的に接続されないことを特徴とする方法。 - 無電解めっき組成物が、銀イオンの錯化剤を含む請求項1に記載の方法。
- 可溶性銀イオン源が、酸化銀、硝酸銀、メタンスルホン酸銀、酢酸銀、硫酸銀、及びこれらのうちの1以上の組み合わせからなる群より選択される請求項1に記載の方法。
- 可溶性銀イオン源が、酢酸銀である請求項3に記載の方法。
- 可溶性銀イオン源が、メタンスルホン酸銀である請求項3に記載の方法。
- 可溶性銀イオン源の濃度が、15グラム/リットル〜35グラム/リットルである請求項1に記載の方法。
- 還元剤が、ロッシェル塩である請求項1に記載の方法。
- 還元剤が、グリオキサール又はその塩である請求項1に記載の方法。
- 還元剤の濃度が、15グラム/リットル〜60グラム/リットルである請求項1に記載の方法。
- 錯化剤が、シアン化物、スクシンイミド、置換スクシンイミド、ヒダントイン、置換ヒダントイン、ウラシル、チオ硫酸塩、アミン類、及びこれらのうちの1以上の組み合わせからなる群より選択される請求項2に記載の方法。
- 錯化剤が、ヒダントイン又は置換ヒダントインである請求項10に記載の方法。
- 錯化剤の濃度が、40グラム/リットル〜80グラム/リットルである請求項2に記載の方法。
- 太陽電池の前側における金属を含むパターンが、前記パターン上に印刷された電流収集線及び母線を含む請求項1に記載の方法。
- 金属を含むパターンが、印刷された銀ペーストを含む請求項13に記載の方法。
- 光源が、クオーツハロゲンランプ、白熱ランプ、及び水銀ランプからなる群より選択される請求項1に記載の方法。
- 光起電電池を無電解めっき組成物と接触させる工程が、前記光起電電池を前記無電解めっき組成物に浸漬することを含む請求項1に記載の方法。
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US12/549,547 US8722142B2 (en) | 2009-08-28 | 2009-08-28 | Light induced electroless plating |
US12/549,547 | 2009-08-28 | ||
PCT/US2010/037456 WO2011025568A1 (en) | 2009-08-28 | 2010-06-04 | Light induced electroless plating |
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JP5442869B2 true JP5442869B2 (ja) | 2014-03-12 |
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US (1) | US8722142B2 (ja) |
EP (1) | EP2470692B1 (ja) |
JP (1) | JP5442869B2 (ja) |
KR (1) | KR101397919B1 (ja) |
CN (1) | CN102471912B (ja) |
ES (1) | ES2673329T3 (ja) |
TW (1) | TWI408253B (ja) |
WO (1) | WO2011025568A1 (ja) |
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US8337942B2 (en) * | 2009-08-28 | 2012-12-25 | Minsek David W | Light induced plating of metals on silicon photovoltaic cells |
US8795502B2 (en) * | 2010-05-12 | 2014-08-05 | International Business Machines Corporation | Electrodeposition under illumination without electrical contacts |
JP5699794B2 (ja) * | 2010-06-23 | 2015-04-15 | 上村工業株式会社 | アルミニウム酸化皮膜用除去液及びアルミニウム又はアルミニウム合金の表面処理方法 |
US8969122B2 (en) * | 2011-06-14 | 2015-03-03 | International Business Machines Corporation | Processes for uniform metal semiconductor alloy formation for front side contact metallization and photovoltaic device formed therefrom |
CN103996752B (zh) * | 2014-06-10 | 2016-04-13 | 中节能太阳能科技(镇江)有限公司 | 一种太阳能电池正电极栅线制备方法 |
CN111826692A (zh) * | 2020-07-08 | 2020-10-27 | 苏州太阳井新能源有限公司 | 一种光伏电池光诱导或光辅助电镀的方法 |
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US5882435A (en) * | 1993-09-30 | 1999-03-16 | Siemens Solar Gmbh | Process for the metal coating of solar cells made of crystalline silicon |
JPH08104993A (ja) * | 1994-10-04 | 1996-04-23 | Electroplating Eng Of Japan Co | 銀めっき浴及びその銀めっき方法 |
US6251249B1 (en) * | 1996-09-20 | 2001-06-26 | Atofina Chemicals, Inc. | Precious metal deposition composition and process |
JPH1115415A (ja) * | 1997-06-16 | 1999-01-22 | Minnesota Mining & Mfg Co <3M> | 自発光可能な再帰性反射シートおよびその製造方法 |
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JP2002305311A (ja) * | 2001-01-31 | 2002-10-18 | Shin Etsu Handotai Co Ltd | 太陽電池の製造方法および太陽電池 |
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KR101009733B1 (ko) * | 2007-05-15 | 2011-01-20 | 주식회사 엘지화학 | 전자파 차폐층 제조시 무전해도금에 대한 촉매 전구체수지조성물, 이를 이용한 금속패턴 형성방법 및 이에 따라제조된 금속패턴 |
WO2009061984A2 (en) * | 2007-11-09 | 2009-05-14 | Technic, Inc. | Method of metallizing solar cell conductors by electroplating with minimal attack on underlying materials of construction |
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CN102471912A (zh) | 2012-05-23 |
JP2013503258A (ja) | 2013-01-31 |
WO2011025568A1 (en) | 2011-03-03 |
EP2470692B1 (en) | 2018-04-04 |
KR20120046312A (ko) | 2012-05-09 |
US8722142B2 (en) | 2014-05-13 |
CN102471912B (zh) | 2014-12-10 |
ES2673329T3 (es) | 2018-06-21 |
KR101397919B1 (ko) | 2014-05-30 |
US20110052835A1 (en) | 2011-03-03 |
TW201111550A (en) | 2011-04-01 |
EP2470692A4 (en) | 2016-12-07 |
TWI408253B (zh) | 2013-09-11 |
EP2470692A1 (en) | 2012-07-04 |
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