TWI406433B - Vertical gallium nitride based light emitting diode and manufacturing method thereof - Google Patents
Vertical gallium nitride based light emitting diode and manufacturing method thereof Download PDFInfo
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Abstract
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本案係有關一種垂直式氮化鎵系發光二極體及其製造方法,尤指一種提高發光二極體亮度的結構與製造方法。The present invention relates to a vertical gallium nitride-based light-emitting diode and a manufacturing method thereof, and more particularly to a structure and a manufacturing method for improving the brightness of a light-emitting diode.
發光二極體(Light Emitting Diode,LED)的基本原理係藉由電子與電洞的結合而產生光,就PN接面而言,在順向偏壓時,電子與電洞分別注入空乏區域(depletion region),這些注入的電子與電洞相互結合,其能量即以光的形式放出。The basic principle of a Light Emitting Diode (LED) is to generate light by combining electrons with a hole. In the case of a PN junction, electrons and holes are respectively injected into a depletion region when biased in the forward direction ( Depletion region), these injected electrons and holes are combined with each other, and their energy is released in the form of light.
請參閱「圖1」與「圖2」所示,習知的垂直式氮化鎵系發光二極體為在一基板1依序形成一具有PN接面的發光結構2、一輸入電壓的第一電性接點3與一具有高反射率的反射層4和導電基板7,接著如「圖2」所示,移除該基板1,並於該發光結構2的另一面形成一第二電性接點5,並將該發光結構2的表面粗化,形成一出光面6。Referring to FIG. 1 and FIG. 2, a conventional vertical gallium nitride-based light-emitting diode is formed by sequentially forming a light-emitting structure having a PN junction and an input voltage on a substrate 1. An electrical contact 3 and a reflective layer 4 having a high reflectivity and a conductive substrate 7, and then as shown in FIG. 2, the substrate 1 is removed, and a second electric current is formed on the other side of the light emitting structure 2. The contact 5 is roughened and the surface of the light-emitting structure 2 is roughened to form a light-emitting surface 6.
習知垂直式氮化鎵系發光二極體,其由該第一電性接點3與該第二電性接點5供給電壓,該發光結構2即會產生電子與電洞,並相互結合並產生光。此時該反射層4可反射光源,以導引光朝向出光面6,該發光結構2的表面粗化結構,則可減少反射以增加出光量,據而形成一高亮度的發光二極體。A vertical gallium nitride-based light-emitting diode is provided, and a voltage is supplied from the first electrical contact 3 and the second electrical contact 5, and the light-emitting structure 2 generates electrons and holes and combines with each other. And produce light. At this time, the reflective layer 4 can reflect the light source to guide the light toward the light-emitting surface 6. The surface of the light-emitting structure 2 is roughened to reduce the reflection to increase the amount of light, thereby forming a high-brightness light-emitting diode.
然如上所述的結構,其該發光結構2與該反射層4的接觸面通常為崎嶇不平的,因而會大大的降低該反射層4的反射效率,導致該發光結構2的光無法被有效導引而射出,而降低發光二極體的發光效率。However, the structure of the light-emitting structure 2 and the reflective layer 4 is generally rugged, so that the reflection efficiency of the reflective layer 4 is greatly reduced, and the light of the light-emitting structure 2 cannot be effectively guided. It is injected to reduce the luminous efficiency of the light-emitting diode.
本發明之主要目的是提供一種垂直式氮化鎵系發光二極體,該發光二極體可有效反射光,以導引光自出光面射出。The main object of the present invention is to provide a vertical gallium nitride-based light-emitting diode which can effectively reflect light to guide light to be emitted from the light-emitting surface.
本發明之次要目的是提供一種垂直式氮化鎵系發光二極體的製造方法,該發光二極體可有效反射光,以提高光的利用效率。A secondary object of the present invention is to provide a method for fabricating a vertical gallium nitride-based light-emitting diode that can efficiently reflect light to improve light utilization efficiency.
為了達到上述目的,本發明為一種垂直式氮化鎵系發光二極體,其包含一發光結構、二輸入電極、一平坦層與一反射層。而其製造步驟包含:首先為製備一基板;接著於該基板上形成一發光結構,該發光結構為PN介面且可被一電壓壓差驅動而產生一光;再接著於該發光結構上形成一輸入電極,該輸入電極設於該發光結構上以供輸入該電壓壓差;接著於該發光結構與該輸入電極上形成一平坦層,並讓該平坦層不完全覆蓋該輸入電極,且該平坦層的表面形成為一平坦面;再接著於該平坦層之平坦面上形成一反射層;最後去除該發光結構上的該基板並於該發光結構上形成另一輸入電極。In order to achieve the above object, the present invention is a vertical gallium nitride-based light-emitting diode comprising a light-emitting structure, a two-input electrode, a flat layer and a reflective layer. The manufacturing step includes: firstly preparing a substrate; then forming a light emitting structure on the substrate, the light emitting structure is a PN interface and can be driven by a voltage difference to generate a light; and then forming a light on the light emitting structure. An input electrode is disposed on the light emitting structure for inputting the voltage difference; then forming a flat layer on the light emitting structure and the input electrode, and allowing the flat layer to not completely cover the input electrode, and the flat The surface of the layer is formed as a flat surface; and then a reflective layer is formed on the flat surface of the flat layer; finally, the substrate on the light emitting structure is removed and another input electrode is formed on the light emitting structure.
如上所述,本案的優點在於藉由該平坦層,可以讓與該反射層的接觸面不再是崎嶇不平的,因而可以大大的提升該反射層的反射效率,讓該發光結構的光可被有效導引而射出,增加發光二極體的發光效率。As described above, the advantage of the present invention is that the flat surface can make the contact surface with the reflective layer no longer rough, so that the reflection efficiency of the reflective layer can be greatly improved, and the light of the light-emitting structure can be Efficient guidance and injection, increasing the luminous efficiency of the light-emitting diode.
茲有關本發明的詳細內容及技術說明,現以實施例來作進一步說明,但應瞭解的是,該等實施例僅為例示說明之用,而不應被解釋為本發明實施之限制。The detailed description of the present invention and the technical description of the present invention are further illustrated by the accompanying drawings, but it should be understood that these embodiments are merely illustrative and not to be construed as limiting.
請參閱「圖3」與「圖4」所示,本發明為一種垂直式氮化鎵系發光二極體,其包含一發光結構10、二輸入電極20、60、一平坦層30、一反射層40與一導電基板70,其中該發光結構10為PN介面且可被一電壓壓差驅動而產生一光(圖未示),該輸入電極20、60設於該發光結構10上以供輸入該電壓壓差。Referring to FIG. 3 and FIG. 4, the present invention is a vertical gallium nitride-based light-emitting diode comprising a light-emitting structure 10, two input electrodes 20, 60, a flat layer 30, and a reflection. The layer 40 and a conductive substrate 70, wherein the light emitting structure 10 is a PN interface and can be driven by a voltage difference to generate a light (not shown). The input electrodes 20, 60 are disposed on the light emitting structure 10 for input. This voltage differential.
該平坦層30設於該發光結構10的一側,該平坦層30具 有至少一開口31,該開口31正對該輸入電極20設置,以讓該輸入電極20裸露出來,且該平坦層30的表面具有一平坦面32,又該平坦層30可以為液狀態,且選自聚甲基丙烯酸甲酯(polymethylmethacrylate;PMMA)與聚亞醯胺(polyimide;PI),環氧樹脂(Epoxy Resin),矽質樹脂(Silicons)的任一種,並藉一旋佈機(圖未示)均勻的旋佈於該發光結構10的一側,該平坦層30為光敏感材料,以藉黃光顯影製程使該平坦層30硬化並形成該開口31。The flat layer 30 is disposed on one side of the light emitting structure 10, and the flat layer 30 has There is at least one opening 31, the opening 31 is disposed on the input electrode 20 to expose the input electrode 20, and the surface of the flat layer 30 has a flat surface 32, and the flat layer 30 can be in a liquid state, and It is selected from any one of polymethylmethacrylate (PMMA) and polyimide (PI), epoxy resin (Epoxy Resin), and enamel resin (Silicons), and borrows a rotary machine (Fig. Uniformly swirled on one side of the light emitting structure 10, the flat layer 30 is a light sensitive material to harden the flat layer 30 and form the opening 31 by a yellow light developing process.
該反射層40設於該平坦層30之平坦面32上,且該反射層40可以為選自銀(Ag)與鋁(Al)的任一種,以提供高反射率,又發光結構10於遠離該發光結構10的表面粗化以形成一出光面11。The reflective layer 40 is disposed on the flat surface 32 of the flat layer 30, and the reflective layer 40 may be selected from any one of silver (Ag) and aluminum (Al) to provide high reflectivity, and the light emitting structure 10 is further away from The surface of the light emitting structure 10 is roughened to form a light exiting surface 11.
而本發明的製造流程,如下所述:The manufacturing process of the present invention is as follows:
首先為製備基板50,基板50一般為選擇藍寶石基板50,藍寶石基板50具良好的磊晶特性,可滿足磊晶形成發光結構10的需求。First, in order to prepare the substrate 50, the substrate 50 is generally selected from the sapphire substrate 50, and the sapphire substrate 50 has good epitaxial characteristics, which can meet the requirements of the epitaxial formation of the light-emitting structure 10.
接著為於基板50上形成發光結構10,發光結構10為PN介面且可被電壓壓差驅動而產生光。Next, a light emitting structure 10 is formed on the substrate 50. The light emitting structure 10 is a PN interface and can be driven by a voltage differential to generate light.
接著為於發光結構10上形成輸入電極20,輸入電極20設於發光結構10上以供輸入電壓壓差。Next, an input electrode 20 is formed on the light emitting structure 10. The input electrode 20 is disposed on the light emitting structure 10 for input voltage difference.
接著於發光結構10與輸入電極20上形成平坦層30,並讓平坦層30不完全覆蓋輸入電極20,且平坦層30的表面形成為平坦面32。A flat layer 30 is then formed on the light emitting structure 10 and the input electrode 20, and the flat layer 30 is not completely covered with the input electrode 20, and the surface of the flat layer 30 is formed as a flat surface 32.
接著於平坦層30之平坦面32上形成反射層40後於該反射層上黏貼或電鍍導電基板70。Next, a reflective layer 40 is formed on the flat surface 32 of the flat layer 30, and the conductive substrate 70 is pasted or plated on the reflective layer.
接著去除發光結構10上的基板50並於發光結構10上形成另一輸入電極60,且可將該發光結構10的表面粗化以形成一出光面11。Then, the substrate 50 on the light emitting structure 10 is removed and another input electrode 60 is formed on the light emitting structure 10, and the surface of the light emitting structure 10 can be roughened to form a light emitting surface 11.
如上所述,藉由該平坦面32的設置可以讓與該反射層40的接觸面不再是崎嶇不平的,因而可以大大的提升該反射層40的反射效率,讓該發光結構10的光可被有效導引而射出,以增加發光效率。As described above, by the arrangement of the flat surface 32, the contact surface with the reflective layer 40 can be no longer rough, so that the reflection efficiency of the reflective layer 40 can be greatly improved, and the light of the light-emitting structure 10 can be made. It is effectively guided and shot to increase luminous efficiency.
惟上述僅為本發明之較佳實施例而已,並非用來限定本發明實施之範圍。即凡依本發明申請專利範圍所做的均等變化與修飾,皆為本發明專利範圍所涵蓋。The above are only the preferred embodiments of the present invention and are not intended to limit the scope of the embodiments of the present invention. That is, the equivalent changes and modifications made by the scope of the patent application of the present invention are covered by the scope of the invention.
1...基板1. . . Substrate
2...發光結構2. . . Light structure
3...第一電性接點3. . . First electrical contact
4...反射層4. . . Reflective layer
5...第二電性接點5. . . Second electrical contact
6...出光面6. . . Glossy surface
7...導電基板7. . . Conductive substrate
10...發光結構10. . . Light structure
11...出光面11. . . Glossy surface
20...輸入電極20. . . Input electrode
30...平坦層30. . . Flat layer
31...開口31. . . Opening
32...平坦面32. . . Flat surface
40...反射層40. . . Reflective layer
50...基板50. . . Substrate
60...輸入電極60. . . Input electrode
70...導電基板70. . . Conductive substrate
圖1,為習知發光二極體的半成品結構圖。FIG. 1 is a structural diagram of a semi-finished product of a conventional light-emitting diode.
圖2,為習知發光二極體的結構圖。2 is a structural view of a conventional light-emitting diode.
圖3,為本發明發光二極體的半成品結構圖。3 is a structural view of a semi-finished product of the light-emitting diode of the present invention.
圖4,為本發明發光二極體的結構圖。4 is a structural view of a light-emitting diode of the present invention.
10...發光結構10. . . Light structure
11...出光面11. . . Glossy surface
20...輸入電極20. . . Input electrode
30...平坦層30. . . Flat layer
31...開口31. . . Opening
32...平坦面32. . . Flat surface
40...反射層40. . . Reflective layer
60...輸入電極60. . . Input electrode
70...導電基板70. . . Conductive substrate
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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TW200532949A (en) * | 2003-12-03 | 2005-10-01 | Sumitomo Electric Industries | Light emitting device |
US20060284190A1 (en) * | 2005-06-17 | 2006-12-21 | Zimmerman Scott M | Light emitting diodes with reflective electrode and side electrode |
TW200802984A (en) * | 2006-04-27 | 2008-01-01 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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TW200532949A (en) * | 2003-12-03 | 2005-10-01 | Sumitomo Electric Industries | Light emitting device |
US20060284190A1 (en) * | 2005-06-17 | 2006-12-21 | Zimmerman Scott M | Light emitting diodes with reflective electrode and side electrode |
TW200802984A (en) * | 2006-04-27 | 2008-01-01 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip |
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