TWI394928B - A hot plate with single layer diamond particles and its related methods - Google Patents
A hot plate with single layer diamond particles and its related methods Download PDFInfo
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本發明是關於一種含碳之複合裝置以及透過傳導與吸收一熱源的熱而散熱的方法。因此,本發明涉及化學、物理、半導體科技以及材料科學等領域。 The present invention relates to a carbon-containing composite device and a method of dissipating heat by conducting and absorbing heat from a heat source. Accordingly, the present invention relates to the fields of chemistry, physics, semiconductor technology, and materials science.
半導體工業的發展追隨著英特爾的共同創始人哥登摩爾(Gordon Moore)於1965年所提出的摩爾定律的趨勢。該趨勢指出,積體電路(IC)或是一般的半導體晶片,其效能每十八個月便成長一倍。 The development of the semiconductor industry follows the trend of Moore's Law proposed by Intel co-founder Gordon Moore in 1965. This trend indicates that the performance of integrated circuits (ICs) or general semiconductor chips doubles every 18 months.
伴隨此進展,產生了各種設計上的挑戰。其中一項常被忽略的挑戰便是散熱問題。通常,此散熱方面的設計會被忽略,或者是到了元件要生產前才增加該設計。根據熱力學第二定律,在一封閉系統中,作越多功則會獲得越多熵(Entropy)。伴隨著中央處理器(CPU)功率的增加,其產生更多的電子流會產生更多的熱。因此,為了避免電路短路或是燒毀,必須移除因熵的增加所產生的熱。一些中央處理器現有的技術其功率約為70瓦以上。例如一以0.13微米科技所製造的中央處理器,其耗電功率可超過100瓦。目前的散熱方法,如使用金屬散熱鰭片(metal fin radiators,例如鋁或是銅等金屬)和水蒸式熱管(water evaporation pipes)將無法對下一世代的處理器進行充分的散熱。 Along with this progress, various design challenges have arisen. One of the often overlooked challenges is the heat issue. Often, this design for heat dissipation is ignored, or the design is added until the component is produced. According to the second law of thermodynamics, in a closed system, the more work, the more entropy is obtained. As the power of the central processing unit (CPU) increases, it produces more electrons that generate more heat. Therefore, in order to avoid short circuit or burnout of the circuit, heat generated by an increase in entropy must be removed. Some of the current technologies of central processing units have a power of about 70 watts or more. For example, a central processing unit manufactured by 0.13 micron technology can consume more than 100 watts of power. Current heat dissipation methods, such as the use of metal fin radiators (metals such as aluminum or copper) and water evaporation pipes, will not allow sufficient heat dissipation for the next generation of processors.
近來,陶瓷均熱板(例如氮化鋁)以及金屬複合均熱板(例如碳化矽/鋁)已用於應付不斷增加的熱。然而, 這些材料的熱傳導率並不大於銅的熱傳導率,因此,這些材料對於半導體的散熱能力有限。 Recently, ceramic soaking plates (such as aluminum nitride) and metal composite soaking plates (such as tantalum carbide/aluminum) have been used to cope with increasing heat. however, The thermal conductivity of these materials is not greater than the thermal conductivity of copper, and therefore, these materials have limited heat dissipation capability for semiconductors.
一般的半導體晶片包含緊密堆疊之金屬導體(例如鋁、銅)以及陶瓷絕緣體(例如氧、氮)。金屬的熱膨脹率一般是陶瓷熱膨脹率的5-10倍。當晶片加熱超過攝氏60度時,金屬與陶瓷之間的熱膨脹率差異會造成微小裂縫。反覆的溫度升降循環致使晶片的損害惡化。結果,半導體的效能會下降。此外,當晶片溫度超過攝氏90度以上時,晶片內半導體部分會成為導體,因而導致晶片的功能失效。此外,電路可能損毀而半導體無法再使用(如轉為「燒毀」)。因此,為了維持半導體的效能,其溫度必須保持在低於一臨界值(例如攝氏90度)。 Typical semiconductor wafers include closely packed metal conductors (such as aluminum, copper) and ceramic insulators (such as oxygen, nitrogen). The coefficient of thermal expansion of a metal is generally 5-10 times that of a ceramic. When the wafer is heated above 60 degrees Celsius, the difference in thermal expansion between the metal and the ceramic causes micro cracks. The repeated temperature rise and fall cycles cause damage to the wafer to deteriorate. As a result, the performance of the semiconductor will decrease. In addition, when the wafer temperature exceeds 90 degrees Celsius, the semiconductor portion in the wafer becomes a conductor, thus causing the function of the wafer to fail. In addition, the circuit may be damaged and the semiconductor can no longer be used (eg, "burned"). Therefore, in order to maintain the performance of the semiconductor, its temperature must be kept below a critical value (for example, 90 degrees Celsius).
傳統的散熱方法是令一金屬熱沉(Heat Sink)接觸該半導體。一般的熱沉是以數片散熱鳍片(Fins)的鋁材所製造而成的。該數片散熱鳍片上附加有一風扇。晶片所產生的熱會流向鋁基座,並且會傳輸到散熱鳍片上,接著透過循環的空氣對流將熱自散熱鳍片處帶走。熱沉因此經常被設計為具有高熱容量而作為熱的儲存器,以移除熱源的熱。 The traditional method of heat dissipation is to have a metal heat sink contact the semiconductor. A typical heat sink is made of a few fins of Fins. A fan is attached to the plurality of fins. The heat generated by the wafer flows to the aluminum pedestal and is transferred to the heat sink fins, which are then carried away from the heat sink fins by circulating air convection. Heat sinks are therefore often designed to have a high heat capacity as a hot reservoir to remove heat from the heat source.
或者,可使用熱管(heat pipe)連接於該熱沉與一冷卻器(radiator)之間,該冷卻器是與該熱沉相分離。該熱管是密封有水蒸氣的真空管。熱管內的水分在熱沉處蒸發,且在冷卻器處凝固。凝固的水分會透過熱管內的多孔媒介(例如銅粉)所產生的毛細現象而回流到熱沉處。因此,可藉由蒸發的水分帶走一半導體晶片上的熱,並且可透過在冷卻器處的凝固水分移除熱。 Alternatively, a heat pipe may be used to connect the heat sink to a radiator that is separated from the heat sink. The heat pipe is a vacuum tube sealed with water vapor. The moisture in the heat pipe evaporates at the heat sink and solidifies at the cooler. The solidified water will flow back to the heat sink through the capillary phenomenon generated by the porous medium (such as copper powder) in the heat pipe. Thus, the heat on a semiconductor wafer can be carried away by the evaporated moisture and the heat can be removed by the solidified moisture at the cooler.
雖然熱管以及熱板可極有效率地移除熱,複雜的真空管內腔以及精密的毛細管系統阻止此熱管式散熱設計在尺寸上縮小到直接對一半導體元件進行散熱。結果,該熱管式散熱方法通常限制在對較大型的熱源進行熱傳導,例如一熱沉。因此.如何透過熱傳導方式來移除一電子元件上的熱,是現今工業中仍然持續研究的議題。 Although heat pipes and hot plates can remove heat very efficiently, complex vacuum tube lumens and precision capillary systems prevent this heat pipe heat sink design from shrinking in size to directly dissipate heat from a semiconductor component. As a result, the heat pipe heat dissipation method is generally limited to heat conduction to a larger heat source, such as a heat sink. therefore. How to remove heat from an electronic component through heat conduction is an issue that is still being studied in the industry today.
目前已發現能有望作為均熱板的另一項選擇是富含鑽石的材料。鑽石相較其他任何材料能更快速地帶走熱。鑽石在室溫下的熱傳導率(大約2000瓦/公尺.絕對溫度(W/mK))是銅熱傳導率(大約400W/mK)的五倍之高,並且是鋁熱傳導率(大約250W/mK)的八倍之高,銅和鋁是目前最常使用的具高熱傳導率的金屬熱導體。此外,鑽石的熱擴散率(Thermal Diffusivity)(12.7平方公分/秒(cm2/sec))是銅熱擴散率(1.17 cm2/sec)或是銅熱擴散率(0.971 cm2/sec)的11倍。鑽石迅速帶走熱而不儲存熱的能力使鑽石成為理想的均熱板。相較於熱沉,均熱板運作時能快速地將熱傳導離開熱源而不儲存熱。表一顯示各種不同材料相較於鑽石的熱性質(在絕對溫度300度時的數值)。 Another option that has been found to be expected as a soaking plate is diamond-rich materials. Diamonds take heat more quickly than any other material. The thermal conductivity of a diamond at room temperature (approximately 2000 watts/meter. absolute temperature (W/mK)) is five times higher than the thermal conductivity of copper (approximately 400 W/mK) and is the thermal conductivity of aluminum (approximately 250 W/mK) Eight times as high, copper and aluminum are the most commonly used metal thermal conductors with high thermal conductivity. In addition, the diamond's Thermal Diffusivity (12.7 cm 2 /sec) is 11 times the copper thermal diffusivity (1.17 cm2/sec) or the copper thermal diffusivity (0.971 cm2/sec). The ability of diamonds to quickly remove heat without storing heat makes diamonds an ideal soaking plate. Compared to the heat sink, the soaking plate can quickly transfer heat away from the heat source without storing heat. Table 1 shows the thermal properties of various materials compared to diamonds (values at an absolute temperature of 300 degrees).
此外,鑽石的熱膨脹係數是所有材料中最低的。鑽石的低熱膨脹率使得鑽石可更容易與具有低熱膨脹率的矽半導體相結合。由於此特性,可將鑽石與半導體之間結合介面的壓力減至最少。 In addition, the coefficient of thermal expansion of diamonds is the lowest of all materials. The low thermal expansion of diamonds makes diamonds easier to combine with germanium semiconductors with low thermal expansion. Due to this feature, the pressure of the bonding interface between the diamond and the semiconductor can be minimized.
近年來,鑽石均熱板被用於對高功率雷射二極體進行散熱,例如被使用於雷射二極體以增進光纖中的光能。然而,大面積的鑽石非常昂貴;因此,過去在商業上並不使用鑽石來對中央處理器進行散熱。為了讓鑽石能作為一均熱板,將鑽石表面進行拋光,使其能夠緊密的接觸半導體晶片。此外,其可金屬化(例如透過鈦/鉑/銀)以供鑽石能以硬焊方式附加到一傳統金屬熱沉上。 In recent years, diamond soaking plates have been used to dissipate heat from high power laser diodes, such as laser diodes, to enhance light energy in the fiber. However, large areas of diamonds are very expensive; therefore, in the past, diamonds were not used commercially to dissipate the central processing unit. In order to allow the diamond to act as a soaking plate, the surface of the diamond is polished to enable close contact with the semiconductor wafer. In addition, it can be metallized (e.g., through titanium/platinum/silver) for diamonds to be brazed to a conventional metal heat sink.
目前許多鑽石均熱板是由化學氣相沉積法(Chemical Vapor Deposition,CVD)形成的鑽石薄膜所製造。舉例而言,一化學氣相沉積鑽石薄膜的原料,其售價高於10美金/平方公分,拋光過與金屬化的鑽石薄膜售價則是前述價格的兩倍。此高價狀況使得鑽石均熱板無法被廣泛使用,除了某些只需要小面積散熱或是沒有其他更好的均熱板可供替代的應用(例如高功率雷射二極體)。除了昂貴,化學氣相沉積鑽石薄膜只能以極為緩慢的速率生長(例如每小時增長數微米);因此,這些鑽石薄膜鮮少超過一毫米的厚度(一般約在0.3到0.5毫米)。然而,若是晶片的散 熱區域大(例如中央處理器),則須用較厚的均熱板(例如3毫米)為佳。 Many diamond soaking plates are currently manufactured from diamond films formed by Chemical Vapor Deposition (CVD). For example, a chemical vapor deposited diamond film is priced at more than $10/cm2, and polished and metallized diamond films are priced at twice the price. This high price condition makes diamond soaking plates unusable, except for applications that require only a small area of heat dissipation or no other better soaking plates (such as high power laser diodes). In addition to being expensive, chemical vapor deposited diamond films can only grow at very slow rates (e.g., a few microns per hour); therefore, these diamond films rarely exceed a thickness of one millimeter (typically about 0.3 to 0.5 mm). However, if it is a wafer Larger heat zones (such as central processing units) require a thicker heat spreader (for example, 3 mm).
除了以化學氣相沉積方法製造的鑽石產品,已有人嘗試使用一整塊的微粒鑽石或是「聚晶鑽石(Polycrystalline Diamond)」來形成均熱板。這些裝置的例子揭露於美國第6,390,181號專利案以及美國公開第2002/0023733號專利申請案之中,這些專利文件整合於本文中以作為參考。一般而言,是透過在高壓高溫(HPHT)條件下,使用鈷作為燒結添加物來燒結鑽石粒子,以形成PCD產品(或是緻密產品)。或者,可使用矽或是矽合金來將鑽石顆粒固結在一起,如美國第4,124,401與4,534,773號專利案所揭露。一般燒結程序中所使用的鑽石顆粒的尺寸是在微米的大小範圍中。因此,PCD緻密物一般具有大量的顆粒邊界,且各個顆粒上包覆有一低導熱性的第二相物質。由於此種PCD緻密物的物理比熱在傳送或導熱上受限,因此作為均熱板時效能不彰。 In addition to diamond products made by chemical vapor deposition, attempts have been made to form a soaking plate using a single piece of particulate diamond or "Polycrystalline Diamond". Examples of such devices are disclosed in U.S. Patent No. 6,390,181 and U.S. Patent Application Serial No. No. No. No. No. No. No. No. No. No. In general, diamond particles are sintered by using cobalt as a sintering additive under high pressure (HPHT) conditions to form a PCD product (or a dense product). Alternatively, the ruthenium or ruthenium alloy may be used to entangle the diamond particles together as disclosed in U.S. Patent Nos. 4,124,401 and 4,534,773. The size of the diamond particles used in the general sintering procedure is in the size range of microns. Therefore, PCD compacts generally have a large number of particle boundaries, and each particle is coated with a low thermal conductivity second phase material. Since the physical specific heat of such a PCD compact is limited in transmission or heat conduction, it is ineffective as a soaking plate.
因此,目前仍在持續地研究與發展能夠有效對一熱源進行導熱散熱且具有成本效益的系統與裝置。 Therefore, it is still continuously researching and developing a cost-effective system and device that can effectively dissipate heat from a heat source.
因此,本發明提供一種均熱板,其可使用於以吸取或是傳導熱的方式來帶走一熱源的熱。在一方面,一均熱板包含複數鑽石顆粒,該複數鑽石顆粒配置為一單層結構,且以一金屬塊體包覆該單層結構。該鑽石顆粒單層結構的厚度可為單一顆粒的厚度。金屬塊體可有效黏結鑽石顆粒,除了單層結構中的鑽石顆粒之外,該金屬塊體可大致 上不包含非鑽石顆粒。在均熱板的另一變化例之中,一鑽石顆粒單層結構可具有一單層厚度,且其中各鑽石顆粒直接物理性地接觸另一鑽石顆粒。一金屬塊體可將鑽石顆粒共同固結於均熱板的至少一側上。 Accordingly, the present invention provides a soaking plate that can be used to carry away heat from a heat source in a manner that draws or conducts heat. In one aspect, a soaking plate comprises a plurality of diamond particles, the plurality of diamond particles being configured in a single layer structure, and the single layer structure is coated with a metal block. The thickness of the diamond particle monolayer structure can be the thickness of a single particle. The metal block can effectively bond the diamond particles, and the metal block can be approximated except for the diamond particles in the single layer structure. Does not contain non-diamond particles. In another variation of the soaking plate, a diamond particle monolayer structure can have a single layer thickness, and wherein each diamond particle directly contacts another diamond particle. A metal block can co-consolidate the diamond particles on at least one side of the heat equalizing plate.
前述金屬塊體為單一金屬材料。 The aforementioned metal block is a single metal material.
前述金屬塊體包含有多於一種以上的金屬材料。 The aforementioned metal block contains more than one metal material.
前述金屬塊體包含多層不同的金屬材料。 The aforementioned metal block comprises a plurality of layers of different metal materials.
前述金屬塊體包含一金屬合金。 The aforementioned metal block contains a metal alloy.
前述金屬塊體包含一成分,該成分是選自鋁、矽、銅、金、銀以及其合金的其中一種。 The aforementioned metal block contains a component selected from the group consisting of aluminum, ruthenium, copper, gold, silver, and alloys thereof.
前述金屬塊體包含鋁。 The aforementioned metal block contains aluminum.
前述金屬塊體包含一鋁鎂合金。 The aforementioned metal block comprises an aluminum-magnesium alloy.
前述鋁的至少一部分有陽極化處理。 At least a portion of the foregoing aluminum is anodized.
前述金屬塊體包含矽。 The aforementioned metal block contains ruthenium.
前述金屬塊體基本上由鋁或是矽所組成。 The aforementioned metal block is basically composed of aluminum or tantalum.
前述金屬塊體包含一鋁以及矽的混合物或是合金。 The aforementioned metal block comprises a mixture or alloy of aluminum and ruthenium.
前述鑽石顆粒為高等級的鑽石顆粒。 The aforementioned diamond particles are high grade diamond particles.
前述鑽石顆粒是大致上具有均勻一致的尺寸或是外形。 The aforementioned diamond particles are substantially uniform in size or shape.
前述鑽石顆粒是立方體型的方晶鑽石。 The aforementioned diamond particles are cube-shaped cubic diamonds.
前述由鑽石顆粒組成的單層結構中以放電等離子燒結法燒結金屬材料,該燒結製程是在低於大約攝氏1200度的溫度下進行。 The foregoing single layer structure composed of diamond particles is sintered by a spark plasma sintering method, and the sintering process is performed at a temperature lower than about 1200 degrees Celsius.
前述鑽石顆粒透過熱處理、電漿處理以及化學溶劑處理的其中一種處理程序進行表面改質。 The aforementioned diamond particles are surface-modified by one of heat treatment, plasma treatment, and chemical solvent treatment.
前述鑽石顆粒的網目尺寸是約從20到100。 The aforementioned diamond particles have a mesh size of from about 20 to about 100.
前述鑽石顆粒的網目尺寸是約從30到50。 The aforementioned diamond particles have a mesh size of from about 30 to about 50.
前述由鑽石顆粒組成的單層結構是較靠近金屬塊體的一側並且較遠離金屬塊體的另一相對側。 The aforementioned single layer structure consisting of diamond particles is closer to one side of the metal block and further away from the other opposite side of the metal block.
前述由於鑽石顆粒組成的單層結構的填充效率是約大於50%。 The aforementioned filling efficiency of the single layer structure composed of diamond particles is about more than 50%.
前述由於鑽石顆粒組成的單層結構的填充效率是約大於80%。 The aforementioned filling efficiency of the single layer structure composed of diamond particles is about more than 80%.
前述均熱板的厚度是單一鑽石顆粒厚度的大約1.1到30倍。 The thickness of the aforementioned soaking plate is about 1.1 to 30 times the thickness of a single diamond particle.
前述由鑽石顆粒組成的單層結構中熔滲有金屬材料。 The aforementioned single layer structure composed of diamond particles is infused with a metal material.
前述熔滲程序是在低於大約攝氏1000度的溫度下進行。 The aforementioned infiltration procedure is carried out at a temperature below about 1000 degrees Celsius.
前述熔滲程序是在真空條件下進行。 The aforementioned infiltration procedure is carried out under vacuum conditions.
前述熔滲程序是在低於100大氣壓的壓力下進行。 The aforementioned infiltration procedure is carried out at a pressure below 100 atmospheres.
前述具有單層鑽石顆粒的均熱板,其進一步包含有一附加在均熱板一表面上的聚晶鑽石層。 The aforementioned soaking plate having a single layer of diamond particles further comprising a polycrystalline diamond layer attached to a surface of the soaking plate.
前述鑽石顆粒經過一熱壓程序處理,該熱壓程序的壓力為從100MPa到5.5Gpa,溫度為從攝氏700到1000度。 The aforementioned diamond particles are subjected to a hot pressing process having a pressure of from 100 MPa to 5.5 GPa and a temperature of from 700 to 1000 degrees Celsius.
前述鑽石顆粒電鍍有一電鍍層,該電鍍層是選自鈦、鉻、鎳、銅、鎢、釩、鈮、鋯、鉬以及其合金的其中一種。 The diamond particles are plated with an electroplated layer selected from the group consisting of titanium, chromium, nickel, copper, tungsten, vanadium, niobium, zirconium, molybdenum, and alloys thereof.
同樣地,本發明提供一種以均熱板轉移熱源的熱的方法,其包含:將一熱源的熱能吸附到一均熱板的鑽石層之中。如前述的實施例,該均熱板可包含一鑽石顆粒單層結構,其厚度為單一顆粒的厚度。熱源的熱能可傳導到一大 致上包覆且將鑽石顆粒固結在一起的金屬塊體。再者,除了單層結構之中的鑽石顆粒之外,該金屬塊體可大致上不包含鑽石顆粒。 Similarly, the present invention provides a method of transferring heat from a heat source by a soaking plate comprising: adsorbing thermal energy from a heat source into a diamond layer of a soaking plate. As in the foregoing embodiments, the heat equalizing plate may comprise a diamond particle single layer structure having a thickness of a single particle. The heat energy of the heat source can be transmitted to a large A metal block that is coated and that holds the diamond particles together. Furthermore, the metal block may contain substantially no diamond particles in addition to the diamond particles in the single layer structure.
前述以均熱板轉移熱源的熱的方法,其進一步包含將熱能由該金屬塊體傳輸到一額外的材料。 The foregoing method of transferring heat from a heat source by a soaking plate further includes transferring thermal energy from the metal block to an additional material.
前述以均熱板轉移熱源的熱的方法,其中進一步將熱能傳輸到一熱沉或是一熱管。 The foregoing method of transferring heat of a heat source by a soaking plate, wherein the heat energy is further transferred to a heat sink or a heat pipe.
前述均熱板是附加到該熱源上。 The aforementioned soaking plate is attached to the heat source.
前述均熱板硬焊或是焊接到該熱源上。 The aforementioned soaking plate is brazed or soldered to the heat source.
前述均熱板包含一金屬材料,該金屬材料選自鋁、矽、銅、金、銀以及其合金的其中一種。 The foregoing heat equalizing plate comprises a metal material selected from the group consisting of aluminum, ruthenium, copper, gold, silver, and alloys thereof.
在此先以較寬廣方式描述本發明各項特徵,以使讀者能更了解之後本發明的詳細描述。本發明其餘特徵將透過下列的本發明詳細說明與所附的申請專利範圍,或者透過實施本發明來清楚呈現。 The features of the present invention are described in the broader aspects of the preferred embodiments of the invention. The remaining features of the present invention will be apparent from the following description of the appended claims.
在揭露與描述本發明前,應當理解的是,本發明並非限制在之後所揭露的特定的構造、製程步驟或是材料,而是可擴大到被那些相關領域中熟習技藝者所了解的均等物。也應了解的是,在此所使用的專門用語僅被用於敘述特定的實施例,而非意圖造成限制。 Before the present invention is disclosed and described, it is understood that the invention is not limited to the specific structures, process steps or materials disclosed hereinafter, but may be extended to the equivalents known to those skilled in the relevant art. . It is also understood that the specific terminology used herein is for the purpose of description
必須注意的是,除非文章中特定指出其他涵義,說明書以及附加的申請專利範圍中所使用的冠詞「一」及「該」是包含了複數的用法。因此,舉例而言,「一鑽石顆粒」包含了一個或更多這樣的顆粒,「一具縫隙的材料」包含 了一個或更多這樣的材料,且,「該顆粒」包含了一個或更多這樣的該。 It must be noted that the articles "a" and "the" are used in the <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Thus, for example, "a diamond particle" contains one or more such particles, and "a material with a gap" contains One or more such materials are present, and "the particles" contain one or more of such.
在描述與請求本發明時,會根據下列提出的定義來使用下列專門用語。 In describing and claiming the present invention, the following specific terms are used in accordance with the definitions set forth below.
文中所使用的「顆粒(particle)」與「粗粒(grit)」等用詞可交替使用,且文中這些用詞與鑽石顆粒連結時,是指鑽石的微粒型態。這些顆粒或是粒子可具有不同的形狀,例如圓形、橢圓形、方形以及自形(Euhedral)等等。在一特定方面,「顆粒」可包含或是基本上由任何形狀的聚晶鑽石所組成,例如立方形的聚晶鑽石。如本發明所屬技術領域已知的「網目(Mesh)」一詞,是指每單位面積的孔洞數目,例如美規網目(U.S.Meshes)。除非有特別指明,否則文中所提到的網目尺寸皆是指美規網目尺寸。此外,因為各個顆粒均是在於一特定的「網目尺寸」內,且實際上會在小幅度的尺寸範圍內進行變動,因此網目尺寸通常被理解為一整群顆粒的平均網目尺寸,文中所使用的「大致上」一詞是指一作用、特徵、性質、狀態、結構、物品或結果之完全或近乎完全的範圍或是程度。舉例而言,一物體「大致上」被包覆,其意指被完全地包覆,或者被幾乎完全地包覆。其確切可與絕對完全相比所允許之偏差程度,係可在某些例子中取決於說明書特定內文。然而,一般而言,接近完全時所得到的結果將如同在絕對且徹底完全時得到的全部結果一般。當「大致上」被使用於描述完全或近乎完全地缺乏一作用、特徵、 性質、狀態、結構、物品或結果時,該使用方式亦是如前述方式而同等地應用的。舉例而言,一「大致上不包含」顆粒的組成物,是可完全缺乏顆粒,或是近乎完全缺乏顆粒而到達如同其完全缺乏顆粒的程度。換言之,只要一「大致上不包含」原料或元素的複合物所受到的影響是無法被量測的,該複合物實際上仍可包含這些原料或是元素。 The terms "particle" and "grit" used herein are used interchangeably, and when these terms are used in conjunction with diamond particles, they refer to the particle form of the diamond. These particles or particles may have different shapes, such as circular, elliptical, square, and self-shaped (Euhedral) and the like. In a particular aspect, the "particles" may comprise or consist essentially of a polycrystalline diamond of any shape, such as a cubic polycrystalline diamond. The term "mesh" as known in the art to which the present invention pertains refers to the number of holes per unit area, such as U.S. Meshes. Unless otherwise specified, the mesh sizes mentioned in the text refer to the size of the US standard mesh. In addition, since each particle is in a specific "mesh size" and actually varies within a small size range, the mesh size is generally understood as the average mesh size of a whole group of particles, as used herein. The term "substantially" refers to the complete or near-complete extent or extent of an action, feature, property, state, structure, article, or result. For example, an object is "substantially" covered, meaning that it is completely covered or nearly completely covered. The extent to which it is absolutely comparable to absolute completeness may depend, in some instances, on the particular context of the specification. However, in general, the results obtained when approaching complete will be as general as the results obtained when absolutely and completely complete. When "substantially" is used to describe a complete or near-complete lack of an action, feature, The manner of use, as well as the nature, state, structure, article or result, is equally applicable as described above. For example, a composition that is "substantially free of" particles may be completely devoid of particles, or nearly completely devoid of particles to the extent that it is completely devoid of particles. In other words, as long as the effect of a composite that is "substantially free of" raw materials or elements cannot be measured, the composite may actually contain these materials or elements.
文中所使用的「均熱板」一詞,是指一能以擴散或是傳導熱的方式來轉移帶走一熱源的熱的材料或是複合產品。均熱板不同於熱沉,熱沉是作為一儲熱容器,直到另一機構將熱沉上的熱轉移離開,而均熱板不儲存特定量的熱,僅僅將一熱源的熱轉移離開。 The term "soaking plate" as used herein refers to a material or composite product that can transfer heat away from a heat source by diffusion or conduction. The soaking plate is different from the heat sink, which acts as a heat storage container until another mechanism transfers the heat away from the heat sink, and the soaking plate does not store a certain amount of heat, and only transfers heat from a heat source away.
文中所使用的「熱源」一詞,是指一具有高於預期的特定量熱能或是熱的裝置或是物體。熱源可包含一裝置,該運作時會產生熱作為副產品的裝置;且熱源可包含一物體,該物體連接到一熱轉移器,且被熱轉移器自另一熱源所轉移來的熱加熱到超出預期的溫度。 The term "heat source" as used herein refers to a device or object that has a higher amount of heat or heat than expected. The heat source may comprise a device that generates heat as a by-product device; and the heat source may comprise an object connected to a heat transfer device and heated by the heat transfer device from another heat source to heat beyond The expected temperature.
文中所使用的「化學鍵」以及「化學鍵結」等用詞,其可相互交替使用,且是指一在兩原子之間施加一吸引力的分子鍵,該吸引力強到足以創造一位於原子間介面處的二元實體化合物。 The terms "chemical bond" and "chemical bond" as used herein are used interchangeably and refer to a molecular bond that exerts an attractive force between two atoms. The attraction is strong enough to create an atomic A binary entity compound at the interface.
文中所使用的「熔滲(infiltrating)」一詞,是指一材料被加熱到其溫度達到熔點且接著如同液體般流動通過顆粒之間的孔洞的狀態。 As used herein, the term "infiltrating" refers to a state in which a material is heated to its temperature to the melting point and then flows as a liquid through the pores between the particles.
文中所使用的「燒結」一詞,是指兩個或更多的獨立顆粒形成一連續的固態塊體。燒結的程序涉及將顆粒固定 為一體並且至少部分地消除顆粒之間的孔洞。燒結鑽石顆粒一般而言需要超高壓以及加入碳溶劑以作為燒結輔助物。 As used herein, the term "sintering" means that two or more separate particles form a continuous solid block. Sintering procedure involves fixing the particles The holes between the particles are integrated and at least partially eliminated. Sintered diamond particles generally require ultra high pressure and the addition of a carbon solvent as a sintering aid.
文中所使用的「固結(Cementing)」以及「被固結(Cemented)」等用詞,是指一種非燒結狀態,其中顆粒被周圍包覆的材料物理性地固定在一起,該包覆的材料可為金屬材料。該「金屬的」一詞是指金屬以及非金屬(Metalloids)。金屬可包含在過渡金屬中所能找到的一般被認為是金屬的化合物、鹼金屬以及鹼土金屬。金屬的範例包括:銀、金、銅、鋁以及鐵。非金屬特別包括矽、硼、鍺、銻、砷以及碲。金屬材料亦包含合金或是包含有金屬材料的混合物。前述合金與混合物可進一步包含添加物。在本發明之中,碳化物形成元素以及碳潤濕劑可包含合金或是混合物,但並非僅僅是金屬成分。碳化物形成元素的範例包括鈧、釔、鈦、鋯、鉿、釩、鈮、鉻、鉬、錳、鉭、鎢以及鎝。 As used herein, the terms "Cementing" and "Cemented" refer to a non-sintered state in which the particles are physically held together by the surrounding coated material. The material can be a metallic material. The term "metal" refers to metals as well as non-metals (Metalloids). The metal may comprise compounds, alkali metals and alkaline earth metals, which are generally considered to be metals found in transition metals. Examples of metals include: silver, gold, copper, aluminum, and iron. Non-metals include, in particular, bismuth, boron, antimony, bismuth, arsenic and antimony The metal material also contains an alloy or a mixture containing a metal material. The foregoing alloys and mixtures may further comprise additives. In the present invention, the carbide forming element and the carbon wetting agent may comprise an alloy or a mixture, but are not merely metal components. Examples of carbide forming elements include ruthenium, osmium, titanium, zirconium, hafnium, vanadium, niobium, chromium, molybdenum, manganese, lanthanum, tungsten, and niobium.
文中所使用的「等級」一詞,是指鑽石顆粒的等級。較高等級表是鑽石有較少的瑕疵以及內含物。由於製造程序的因素,人造鑽石相較天然鑽石更可能包含內含物。鑽石所含的瑕疵以及內含物越少,則其導熱性越佳,且更能夠為本發明所利用。此外,具有瑕疵與內含物的鑽石在某些製造條件下更容易損壞。選擇具有較高等級的鑽石是指刻意選擇具有較佳品質的鑽石顆粒,所謂的品質是指尺寸、價格和/或形狀。較高等級的鑽石代表其相較最低可得品質的鑽石更至少好上一個等級以上,且通常代表其好上 多於一個等級以上。當以相同鑽石顆粒尺寸為基準時,鑽石顆粒等級的增加通常代表其價格的增加。高等級或是更高等級的鑽石顆粒包含有Diamond Innovations公司的MBS-960鑽石產品、Element Six公司的SDB1100鑽石產品、以及Iljin Diamond公司的ISD1700鑽石產品。 The term "grade" as used herein refers to the grade of diamond particles. Higher grade watches are diamonds with less defects and inclusions. Artificial diamonds are more likely to contain inclusions than natural diamonds due to manufacturing process factors. The less the enthalpy and inclusions contained in the diamond, the better its thermal conductivity and the more useful it is for the present invention. In addition, diamonds with niobium and inclusions are more susceptible to damage under certain manufacturing conditions. Choosing a diamond with a higher rating means deliberately selecting diamond particles of better quality, the so-called quality refers to size, price and/or shape. Higher grade diamonds represent at least a better grade than the lowest available quality, and usually represent better More than one level or more. When based on the same diamond particle size, the increase in diamond particle size usually represents an increase in its price. High-grade or higher diamond granules include Diamond Innovations' MBS-960 diamonds, Element Six's SDB1100 diamonds, and Iljin Diamond's ISD1700 diamonds.
文中所使用的複數元件,會列於一通用清單中以增進便利性。然而,須分別將這些清單中的各部分個別地被視為分離且獨特的部分。因此,不應單單只因為一清單內同一群組內的複數部分沒有相反的特性,就將清單中其中一獨立部分解釋為與同一清單中的任何其他部分實質上相同。 The plural elements used in the text are listed in a general list for added convenience. However, each of these lists must be individually treated as separate and distinct parts. Therefore, it should not be interpreted that one of the independent parts of the list is substantially identical to any other part of the same list simply because the complex parts of the same group in a list have no opposite characteristics.
濃度、數量、顆粒尺寸、體積以及其他數值資料可以一範圍形式表達或呈現。應了解的是,此範圍形式僅僅為了方便與簡潔而使用,因此該範圍形式應該被彈性地解釋為不僅包含了被清楚描述以作範圍限制的數值,亦包含在該範圍中的所有獨立數值以及子範圍,猶如清楚地引述各獨立數值以及子範圍一般。 Concentrations, amounts, particle sizes, volumes, and other numerical data can be expressed or presented in a range. It should be understood that the scope of the present invention is to be construed as being limited to the scope of the The sub-range is as if the individual values and sub-ranges are generally quoted.
舉例而言,「大約1到大約5」的數值範圍應被解釋為不僅僅包含所清楚描述的數值範圍,亦應進一步解釋為包含在該數值範圍中的獨立數值以及子範圍。因此,此數值範圍內包含諸如2,3,以及4等獨立數值,包含諸如1-3,2-4以及3-5以及1,2,3,4及5等子範圍。此相同的法則適用於僅引述單一數值作為下限或是上限的範圍。此外,此解釋方式適用於任何幅度的範圍以及任何所述的特性。 For example, a range of values from "about 1 to about 5" is to be construed as not limited to the range of values that are clearly described, and should be further construed as the <RTIgt; Therefore, this numerical range includes independent values such as 2, 3, and 4, including subranges such as 1-3, 2-4, and 3-5, and 1, 2, 3, 4, and 5. This same rule applies to a range that only refers to a single value as a lower or upper limit. Moreover, this explanation applies to any range of amplitudes as well as any of the described characteristics.
本發明一具有由鑽石顆粒組成的單層結構的均熱板能 夠提供一熱管理上的經濟性與有效率的機制。在該均熱板之中,該配置在具有單一顆粒厚度的單層結構中的複數鑽石顆粒是相當容易且實用的均熱板設計,此均熱板設計與一熱源連接時,極有熱管理效率。該鑽石顆粒可透過一金屬塊體而固定在前述單層結構之中,其中該金屬塊體將顆粒共同凝固為一體。在於這些實施例之中,該金屬塊體在該單層結構之外的部分大致上不具有其他鑽石顆粒。此外,鑽石顆粒可電鍍有一電鍍層,該電鍍層是選自鈦、鉻、鎳、銅、鎢、釩、鈮、鋯、鉬以及其合金的其中一種,藉此,可增加鑽石顆粒與金屬塊體之間的鍵結強度。此外,該鑽石顆粒透過熱處理、電漿處理以及化學溶劑處理的其中一種處理程序進行表面改質,藉此增強鑽石顆粒與金屬塊體之間的結合強度。 The invention has a single layer structure of soaking plate energy composed of diamond particles It is sufficient to provide an economical and efficient mechanism for thermal management. Among the heat equalizing plates, the plurality of diamond particles disposed in a single layer structure having a single particle thickness is a relatively easy and practical soaking plate design, and the heat plate design is thermally managed when connected to a heat source. effectiveness. The diamond particles are fixed in the aforementioned single layer structure through a metal block, wherein the metal block co-solidifies the particles together. In these embodiments, the portion of the metal block that is outside of the single layer structure has substantially no other diamond particles. In addition, the diamond particles may be plated with a plating layer selected from the group consisting of titanium, chromium, nickel, copper, tungsten, vanadium, niobium, zirconium, molybdenum, and alloys thereof, thereby increasing diamond particles and metal blocks. The bond strength between the bodies. In addition, the diamond particles are surface-modified by one of heat treatment, plasma treatment, and chemical solvent treatment, thereby enhancing the bonding strength between the diamond particles and the metal block.
根據文中呈現的實施例,本發明提供了適用於各種均熱板、熱管理系統、均熱板的製造方法以及熱源的熱轉移方法等等的細節內容。因此,文中對於一特定實施例的討論會關聯以及支持文中的其他相關實施例。 In accordance with the embodiments presented herein, the present invention provides details applicable to various soaking plates, thermal management systems, methods of making soaked plates, and methods of heat transfer of heat sources and the like. Accordingly, the discussion of a particular embodiment herein relates to and supports other related embodiments in the text.
在本發明一實施例中,金屬塊體是以單一金屬材料製造。已知金屬一詞是包含金屬以及非金屬(例如矽、硼、鍺、銻、砷以及碲);在另外一實施例中,該金屬塊體是具有多於一種以上的金屬材料。當金屬塊體包含多於一種以上的材料時,這些金屬材料以任何結構呈現,例如合金、混合物、相分離的多層結構或者是其它的空間配置等等。在一特定實施例之中,該均熱板包含有鋁。在於另一實施例之中,該金屬塊體包含矽。在又一實施例之中,該金屬 塊體可包含鋁以及矽,例如包含兩者的合金以及/或是混合物。應當根據特別的考量來選擇所欲使用於金屬塊體中的材料。由所欲達成的應用,來決定選擇更具電絕緣性的金屬材料或是選擇更具導電性的金屬材料。關於選擇材料的考量亦包括延展性、價格、與所欲使用的熱源、製程之間存在的潛在活性、以及與所使用的其他材料(包括任何型態的黏著劑)之間的相容性。 In an embodiment of the invention, the metal block is fabricated from a single metal material. The term metal is known to include metals as well as non-metals (e.g., bismuth, boron, bismuth, antimony, arsenic, and antimony); in another embodiment, the metal block has more than one metal material. When the metal block contains more than one or more materials, these metal materials are presented in any structure, such as an alloy, a mixture, a phase separated multilayer structure, or other spatial configuration or the like. In a particular embodiment, the soaking plate comprises aluminum. In another embodiment, the metal block comprises niobium. In yet another embodiment, the metal The block may comprise aluminum as well as tantalum, such as an alloy comprising both and/or a mixture. The material to be used in the metal block should be selected according to special considerations. It is up to the application to be decided to choose a more electrically insulating metal material or to select a more conductive metal material. Considerations for selecting materials also include compatibility, price, potential heat source to be used, potential activity between the processes, and compatibility with other materials used, including any type of adhesive.
為了增加該均熱板的熱傳導率,必須使用較高等級的鑽石。若是鑽石含有內含物或是其他型態的缺陷,則鑽石粗粒的熱傳導率未必會高於銅等金屬材料。具有較好品質的鑽石顆粒相較具有較差品質的鑽石顆粒能夠更快速的傳輸熱。因此,使用較高等級的鑽石顆粒能增加均熱板的整體熱傳導率。具有規則形狀的鑽石亦能夠增加均熱板的熱傳導率。因此,在某些設計製作已包含形狀規則的鑽石即可合乎所求。鑽石顆粒可進行配置以增進熱傳導以及熱傳輸。為了增進熱傳導與熱傳輸,一鑽石顆粒可直接地物理性接觸另一鑽石顆粒。此種直接地物理性接觸是鑽石對鑽石的接觸。在一實施例中,一層結構中的大致上所有鑽石顆粒可為鑽石對鑽石的接觸。因此,均熱板中大致上所有的鑽石顆粒可直接地物理性接觸至少一個其他的鑽石顆粒。在又一實施例之中,大致上所有的鑽石可接觸一個或多個鑽石顆粒,其接觸的程度達到形成一連續鑽石粒子路徑以供熱所流通。換言之,所有的鑽石顆粒實質上接觸所提供的鑽石顆粒的本體或是組成物。在另一實施例之中,可將鑽石顆粒配置或是鋪排為一個二維圖形。在一範例之 中,鑽石顆粒可為大致上彼此等距相間隔。在又一實施例之中,所鋪排的鑽石顆粒可為鑽石對鑽石接觸。該鑽石顆粒可配置為具有相同或是相似的方向,透過此種配置可進一步加強上述實施例,且因此增進熱傳導率。在此實施例之中,可鋪排鑽石顆粒以將鑽石顆粒間的縫隙減至最小。舉例而言,大致上所有的鑽石顆粒可自該均熱板上暴露出一表面。或者,該鑽石顆粒可具有一平面,其中所有的鑽石顆粒的各個表面均對齊該平面。鑽石顆粒具有相同尺寸時,各鑽石顆粒可以其表面對齊兩個平面,例如對齊該單一鑽石層的頂面與底面。在某些實施例之中,此單鑽石層結構可部分暴露於均熱板之外,或者可大致上被一非鑽石材料所包覆,例如被金屬塊體所包覆,或者可被一金屬塊體與碳材料組成物所包覆,例如被金屬塊體與聚晶鑽石的組成物所包覆。根據材料成本、加工成本、以及所預期使用的均熱板,可限制由鑽石顆粒組成的單層結構的尺寸小於該均熱板的尺寸來增進效益。舉例而言,鑽石顆粒可成形在一單層結構中而接近均熱板的一表面,但是並不完全延伸到該熱沉的邊緣。 In order to increase the thermal conductivity of the soaking plate, a higher grade of diamond must be used. If the diamond contains inclusions or other types of defects, the thermal conductivity of the diamond coarse particles may not be higher than that of copper or other metal materials. Diamond particles with better quality can transfer heat more quickly than diamond particles with poor quality. Therefore, the use of higher grade diamond particles can increase the overall thermal conductivity of the soaking plate. Diamonds with a regular shape can also increase the thermal conductivity of the soaking plate. Therefore, it is desirable to make diamonds that already contain shape rules in some designs. Diamond particles can be configured to enhance heat transfer and heat transfer. To enhance heat transfer and heat transfer, one diamond particle can be directly in physical contact with another diamond particle. This direct physical contact is the diamond's contact with the diamond. In one embodiment, substantially all of the diamond particles in a layer of structure may be diamond to diamond contact. Thus, substantially all of the diamond particles in the soaking plate can be in direct physical contact with at least one other diamond particle. In yet another embodiment, substantially all of the diamonds may contact one or more diamond particles that are in contact to form a continuous diamond particle path for heat to circulate. In other words, all of the diamond particles substantially contact the body or composition of the provided diamond particles. In another embodiment, the diamond particles can be configured or laid out into a two-dimensional pattern. In an example The diamond particles may be substantially equidistant from one another. In yet another embodiment, the laid diamond particles may be diamond to diamond contact. The diamond particles can be configured to have the same or similar orientation, and the above embodiment can be further enhanced by such a configuration, and thus the thermal conductivity is improved. In this embodiment, the diamond particles can be laid to minimize the gap between the diamond particles. For example, substantially all of the diamond particles may expose a surface from the soaking plate. Alternatively, the diamond particles can have a plane in which the individual surfaces of all of the diamond particles align with the plane. When the diamond particles have the same size, each diamond particle can have its surface aligned with two planes, such as the top and bottom surfaces of the single diamond layer. In some embodiments, the single diamond layer structure may be partially exposed to the outside of the soaking plate, or may be substantially covered by a non-diamond material, such as a metal block, or may be coated with a metal The block is coated with a carbon material composition, for example, a composition of a metal block and a polycrystalline diamond. Depending on the cost of the material, the processing cost, and the soaking plate that is expected to be used, the size of the single layer structure composed of diamond particles can be limited to be smaller than the size of the heat equalizing plate to enhance the efficiency. For example, the diamond particles can be formed into a single layer structure close to a surface of the heat equalizing plate, but do not extend completely to the edge of the heat sink.
尺寸亦會影響鑽石顆粒傳輸熱的能力。較大的鑽石顆粒相較於較小的鑽石顆粒具有較佳的效能。同樣地,尺寸均勻一致的鑽石顆粒能增加由鑽石顆粒組成的單層結構的熱傳輸能力。就其本身而言,本發明的一實施例預期鑽石顆粒的尺寸是均勻一致。雖然鑽石顆粒的尺寸可為任何尺寸,在本發明一實施例之中,鑽石顆粒的網目尺寸範圍從大約10到大約100。在另一實施例之中,鑽石顆粒的網目 尺寸可為從大約20到大約100,且可為從大約30到大約50;在某些方面,可專門使用網目尺寸為30/40的鑽石顆粒;在另一方面,可專門使用網目尺寸為40/50的鑽石顆粒。在一特定實施例之中,可使用更粗糙的鑽石顆粒,例如那些大於60網目或者大於80網目的鑽石顆粒。 Size also affects the ability of diamond particles to transfer heat. Larger diamond particles have better performance than smaller diamond particles. Similarly, uniform size diamond particles increase the heat transfer capacity of a single layer structure composed of diamond particles. For its part, an embodiment of the invention contemplates that the size of the diamond particles is uniform. While the size of the diamond particles can be any size, in one embodiment of the invention, the diamond particles have a mesh size ranging from about 10 to about 100. In another embodiment, the mesh of the diamond particles Dimensions can range from about 20 to about 100, and can range from about 30 to about 50; in some aspects, diamond particles having a mesh size of 30/40 can be used exclusively; on the other hand, a mesh size of 40 can be used exclusively. /50 diamond particles. In a particular embodiment, coarser diamond particles may be used, such as those having a mesh size greater than 60 mesh or greater than 80 mesh.
雖然本發明預期該由鑽石顆粒組成的單層結構可位於金屬塊體的中心,其中一種結構中,該由鑽石顆粒組成的單層結構可較靠近該金屬塊體的一側。此設計可供鑽石顆粒層所靠近的金屬塊體一側被設置於接近該熱源。因此,該均熱板上最接近一熱源的區域相較遠離該熱源的區域,可具有較高的熱傳導性。 Although the present invention contemplates that the single layer structure comprised of diamond particles can be located in the center of the metal block, in one configuration, the single layer structure comprised of diamond particles can be closer to one side of the metal block. This design allows the side of the metal block adjacent to the diamond particle layer to be placed close to the heat source. Therefore, the region closest to a heat source on the heat equalizing plate can have higher thermal conductivity than the region farther away from the heat source.
在另外一實施例之中,該由鑽石顆粒組成的單層結構可被固結於該金屬塊體的至少一側。因此,該由鑽石顆粒組成的單層結構可透過該金屬塊體而被共同固定在該均熱板之中,但可至少一部分暴露在其一表面之外。在此實施例之中,可以一非鑽石材料的薄層或是薄膜鑲貼於鑽石顆粒之上。該非鑽石材料可為具有較佳熱擴散性,以便能輔助均勻熱器的熱傳導作用。此外,該鑲貼的材料可用於將該均熱板抓附或是固定到一熱源上。在一方面,一薄金屬層,例如具有約從50到200奈米厚度的薄金屬層,透過將該均熱板固定到一熱源並且以最少的金屬材料隔離熱源與鑽石顆粒,可幫助該均熱板緊密接觸該熱源。熔融的金屬層,例如鋁以及/或是矽,可熔滲且固結最初被有機黏著劑所固定的由鑽石顆粒組成的單層結構。接著把該有機黏著劑燒成碳以形成一碳構成的鑲貼層。此外,另一塗佈在 鑽石顆粒暴露表面上的碳材料的範例是類鑽碳。此類鑽碳可被塗佈在該鑽石顆粒上而形成一相對薄層,例如約從400到700奈米的厚度。類鑽碳可具有一相對高的熱傳導率因而能加強均熱板整體的熱傳導率。 In another embodiment, the single layer structure comprised of diamond particles can be affixed to at least one side of the metal block. Therefore, the single layer structure composed of diamond particles can be commonly fixed in the heat equalizing plate through the metal block, but at least a portion can be exposed outside a surface thereof. In this embodiment, a thin layer of non-diamond material or a film may be applied over the diamond particles. The non-diamond material may have better thermal diffusivity to aid in the heat transfer of the uniform heater. Additionally, the inlaid material can be used to grasp or secure the heat spreader to a heat source. In one aspect, a thin metal layer, such as a thin metal layer having a thickness of from about 50 to 200 nanometers, can be assisted by securing the heat spreader to a heat source and isolating the heat source and diamond particles with a minimum of metal material. The hot plate is in close contact with the heat source. A molten metal layer, such as aluminum and/or tantalum, can infiltrate and consolidate a single layer structure of diamond particles that is initially held by an organic binder. The organic adhesive is then fired into carbon to form an inlaid layer of carbon. In addition, another coating is in An example of a carbon material on a diamond surface exposed surface is diamond-like carbon. Such drilled carbon can be coated onto the diamond particles to form a relatively thin layer, such as a thickness of from about 400 to 700 nanometers. The diamond-like carbon can have a relatively high thermal conductivity and thus enhance the overall thermal conductivity of the soaking plate.
在一方面,該金屬塊體可包含基本上由鋁、矽、銅、金、銀以及其合金或是混合物所組成。在一詳細方面,該金屬塊體可包含鋁或是矽。在進一步方面,該金屬塊體可基本上由鋁所組成。在另一方面,該金屬塊體可基本上由矽所組成。此外,該金屬塊體可僅僅使用鋁鎂合金或是使用鋁鎂合金與其他材料的複合物。 In one aspect, the metal block can comprise substantially consisting of aluminum, tantalum, copper, gold, silver, and alloys or mixtures thereof. In a detailed aspect, the metal block can comprise aluminum or tantalum. In a further aspect, the metal block can consist essentially of aluminum. In another aspect, the metal block can consist essentially of tantalum. In addition, the metal block may use only an aluminum-magnesium alloy or a composite of an aluminum-magnesium alloy and other materials.
在進一步方面,當金屬塊包含或是基本上由鋁所組成時,一部分的鋁可進行陽極化處理。可在鋁的一個或是多個表面上進行陽極化處理。在一實施例之中,透過鋁固結一鑽石顆粒層的均熱板可具有一電鍍表面。該陽極化處理表面可平行該由鑽石顆粒組成的單層結構,亦可進一步位於該均熱板欲相對一熱源的一部分上。在一特定實施例之中,該陽極化表面可設置在該鑽石顆粒層與熱源之間。在一更特定的實施例之中,該陽極化處理表面可置放於直接物理性地與熱源接觸,更甚者,該陽極化處理表面可物理性附加以及/或是化學性結合到該熱源。 In a further aspect, when the metal block comprises or consists essentially of aluminum, a portion of the aluminum can be anodized. Anodizing can be performed on one or more surfaces of the aluminum. In one embodiment, the soaking plate that bonds a layer of diamond particles through the aluminum may have a plated surface. The anodized surface may be parallel to the single layer structure composed of diamond particles, or may be further located on a portion of the heat equalizing plate to be opposed to a heat source. In a particular embodiment, the anodized surface can be disposed between the diamond particle layer and a heat source. In a more specific embodiment, the anodized surface can be placed in direct physical contact with a heat source, and moreover, the anodized surface can be physically and/or chemically bonded to the heat source. .
在該單層結構中更高的鑽石顆粒密度能增進該均熱板傳輸熱的能力。當該單層結構是具有單一鑽石顆粒厚度時,相較其他於均熱板之中使用鑽石顆粒的一般方法,可大為增進填充效率。填充效率的好壞是部份依賴均熱板的製造情況(例如所使用的材料、溫度、時間以及壓力)。 在一實施例之中,該填充效率可高於大約50%。在另一實施例之中,該填充效率可高於大約80%,且甚至可高於90%。在又一實施例之中,該填充效率可高於大約95%。在鑽石顆粒的低壓熔滲之中(一般熔滲使用低壓),該填充效率可為從大約50到大約70%或是更高。可藉由選擇更大的鑽石顆粒以及具有均勻一致的尺寸與外形的鑽石顆粒來增進填充效率。 The higher diamond particle density in the single layer structure enhances the ability of the soaking plate to transfer heat. When the single layer structure has a single diamond particle thickness, the filling efficiency can be greatly improved compared to other general methods of using diamond particles in the heat equalizing plate. The efficiency of the filling is partly dependent on the manufacturing of the soaking plate (eg material used, temperature, time and pressure). In an embodiment, the fill efficiency can be greater than about 50%. In another embodiment, the fill efficiency can be above about 80%, and can even be above 90%. In yet another embodiment, the fill efficiency can be greater than about 95%. In the low pressure infiltration of diamond particles (typically low pressure using infiltration), the filling efficiency can be from about 50 to about 70% or higher. Filling efficiency can be improved by selecting larger diamond particles and diamond particles with uniform size and shape.
在又另一實施例中,使用具有均勻一致外形的鑽石顆粒能增加填充效率。尤其,雖然也可以使用其它形狀的鑽石顆粒,大致上呈立方體的鑽石顆粒是商業上最常能獲得的。該立方體鑽石可以邊對邊方式填充於一單層結構中。若鑽石顆粒均朝朝向同一方向而非隨機地朝任意方向,則可增進最後複合物的熱性質。 In yet another embodiment, the use of diamond particles having a uniform contour can increase fill efficiency. In particular, although other shapes of diamond particles can be used, substantially cubic diamond particles are commercially most commonly available. The cube diamond can be filled in a single layer structure in an edge-to-edge manner. If the diamond particles are all oriented in the same direction rather than randomly in any direction, the thermal properties of the final composite can be enhanced.
在設計本發明均熱板時要考量的其中一個因素是鑽石顆粒之間介面的熱性質以及以及金屬材料與鑽石顆粒之間介面的熱特性。介面之間的孔洞如同熱的障礙物,換言之通常是指接觸熱阻。理想上,整個單層結構中,鑽石顆粒的側面會與其他鑽石顆粒的側面確實的接觸。 One of the factors to be considered when designing the soaking plate of the present invention is the thermal properties of the interface between the diamond particles and the thermal properties of the interface between the metal material and the diamond particles. The holes between the interfaces are like hot obstacles, in other words, the contact thermal resistance. Ideally, in the entire single layer structure, the sides of the diamond particles will indeed contact the sides of the other diamond particles.
在某些實施例之中,該由鑽石顆粒組成的單層結構可由金屬塊所固結。在某些方面,可透過以金屬材料進行熔滲來達成前述的固結程序。可依照所用來進行熔滲的金屬材料的種類來決定適當的熔滲溫度。雖然可在各種不同溫度下執行熔滲,在一實施例之中,可在約低於攝氏1000度的溫度下進行熔滲。熔滲的壓力亦可改變。前述壓力可為一相對系統壓力的低壓。該低壓的範例可為低於大約100 大氣壓、低於大約50大氣壓、低於大約10大氣壓、以及低於大約5大氣壓。在一實施例之中,可在真空裝置中進行熔滲。除了前述熔滲程序,亦由鑽石顆粒組成的單層結構中可以放電等離子燒結法(Spark Plasma Sintering,SPS)燒結金屬材料,該燒結製程是在低於大約攝氏1200度的溫度下進行。亦可經由熱壓程序(Hot pressing),控制壓力為100 MPa到5.5 GPa,溫度為攝氏700度到1100度,可有效的使鑽石顆粒和金屬基質結合固結。 In some embodiments, the single layer structure comprised of diamond particles can be consolidated by a metal block. In some aspects, the aforementioned consolidation procedure can be achieved by infiltration with a metallic material. The appropriate infiltration temperature can be determined in accordance with the type of metal material used to infiltrate. Although infiltration can be performed at various temperatures, in one embodiment, infiltration can be carried out at temperatures below about 1000 degrees Celsius. The pressure of infiltration can also be changed. The aforementioned pressure can be a low pressure relative to system pressure. An example of this low pressure can be less than about 100 Atmospheric pressure, less than about 50 atmospheres, less than about 10 atmospheres, and less than about 5 atmospheres. In an embodiment, infiltration can be performed in a vacuum apparatus. In addition to the aforementioned infiltration procedure, a single layer structure consisting of diamond particles can be sintered by Spark Plasma Sintering (SPS), which is carried out at a temperature of less than about 1200 degrees Celsius. It can also be controlled by hot pressing to control the pressure from 100 MPa to 5.5 GPa and the temperature from 700 to 1100 degrees Celsius, which can effectively combine the diamond particles with the metal matrix.
本發明包含將一熱源的熱轉移離開的裝置、系統以及方法。在一方面,一熱管理系統可包含一均熱板。此熱管理系統可包含一接觸均熱板的熱源。該均熱板可具有二相對側。最靠近該熱源的一側可相較另一側具有較低的熱膨脹係數以及較高的熱傳導率。該均熱板中的單一固結之鑽石顆粒層能影響該熱膨脹係數以及熱傳導率等特性。特別地,該均熱板具有該鑽石顆粒層的一側是具有低熱膨脹率以及高熱傳導率。 The present invention includes apparatus, systems, and methods for transferring heat from a heat source. In one aspect, a thermal management system can include a soaking plate. The thermal management system can include a heat source that contacts the soaking plate. The heat equalizing plate can have two opposite sides. The side closest to the heat source may have a lower coefficient of thermal expansion and a higher thermal conductivity than the other side. The single consolidated diamond particle layer in the soaking plate can affect characteristics such as thermal expansion coefficient and thermal conductivity. In particular, the heat equalizing plate has a side of the diamond particle layer having a low coefficient of thermal expansion and a high thermal conductivity.
透過增加一聚晶鑽石(Polycrystalline Diamond,PCD)層,可使得靠近均熱板一側的鑽石層的熱性質更為突出。此聚晶鑽石層可附加於該均熱板上,且可設置在該均熱板與熱源之間。此外,在某些實施例之中,一聚晶鑽石層可直接接觸該由鑽石顆粒組成的單層結構。舉例而言,在均熱板的鑽石顆粒層暴露於該均熱板表面上的例子中,可在該鑽石顆粒層上直接附加一聚晶鑽石層。 By adding a layer of Polycrystalline Diamond (PCD), the thermal properties of the diamond layer near the side of the soaking plate can be made more prominent. The polycrystalline diamond layer may be attached to the soaking plate and may be disposed between the soaking plate and the heat source. Moreover, in some embodiments, a polycrystalline diamond layer can be in direct contact with the single layer structure comprised of diamond particles. For example, in the example where the layer of diamond particles of the soaking plate is exposed to the surface of the soaking plate, a layer of polycrystalline diamond may be directly attached to the layer of diamond particles.
本發明所製造的均熱板可根據不同的使用而具有不同的結構。上述均熱板可拋光且可基於所應用的熱源的需求 而製訂外形。相對於以化學氣相程序所製造的均熱板,本發明的均熱板可相對快速地形成幾乎任何尺寸。最常作於電子應用的均熱板,其厚度將從大約0.1毫米到達大約1毫米。在一方面,該均熱板厚度可為鑽石層厚度的大約1.1到大約30倍。該均熱板可形成為一圓形或是橢圓形碟狀或者是四邊形,例如方形、矩形以或是其他形狀的薄片。此設計的優點在於設計上能夠有較好的緊密程度。此外,本發明均熱板可形成為極大的尺寸,以致於能夠覆蓋大量的面積,亦可形成為複雜的形狀,端看所欲對應的應用。該熱源亦可為任何能夠產生熱的電子類或是其他類的元件(例如中央處理器(CPU))。 The soaking plates produced by the present invention can have different structures depending on the use. The above soaking plate can be polished and can be based on the demand of the applied heat source And formulate the shape. The soaking plate of the present invention can be formed into almost any size relatively quickly with respect to a soaking plate manufactured by a chemical vapor phase process. The soaking plates most commonly used in electronic applications will have a thickness of from about 0.1 mm to about 1 mm. In one aspect, the soaking plate thickness can be from about 1.1 to about 30 times the thickness of the diamond layer. The heat equalizing plate may be formed as a circular or elliptical dish or a quadrilateral, such as a square, a rectangle or a sheet of other shapes. The advantage of this design is that it is designed to have a good degree of tightness. In addition, the soaking plate of the present invention can be formed to a very large size so as to cover a large amount of area, or can be formed into a complicated shape to look at the desired application. The heat source can also be any electronic or other type of component that can generate heat (such as a central processing unit (CPU)).
一旦形成均熱板,則基於設計與熱傳輸原理來設置均熱板的位置。該均熱板可直接緊密接觸元件,且甚至可以形成包覆熱源,或是均熱板外形可塑造成以大面積直接接觸熱源。或者,該均熱板可透過一熱管或是其他熱轉移裝置的連接而與熱源相互分離。 Once the soaking plate is formed, the position of the soaking plate is set based on the design and heat transfer principle. The heat equalizing plate can directly contact the components in close contact, and can even form a coated heat source, or the heat equalizing plate shape can be shaped to directly contact the heat source in a large area. Alternatively, the soaking plate may be separated from the heat source by a heat pipe or other heat transfer device connection.
除了文中所述的均熱板,本發明亦包含一冷卻單元以用於將熱轉移離開一熱源。如第一A圖所示,根據文中所討論的原理所形成的一均熱板12,其可設置於與一熱源熱接觸,該熱源可為一中央處理器14以及一熱沉16。該均熱板將中央處理器所產生的熱傳輸到熱沉。該熱沉的材料以及結構可為本發明所屬技術領域具有通常知識者已知的各種材料與結構。舉例而言,鋁以及銅為已知的熱沉材料,且如第一A圖所示,熱沉可包含數片散熱鰭片18。當透過均熱板來快速且有效地轉移中央處理器的熱,熱沉可吸收 熱,且散熱鰭片幫助將熱逸散於週圍環境之中。可依據所要達成的特定結果而採用各種不同的熱沉、熱源以及均熱板之間的接觸結構。舉例而言,上述均熱板等元件可配置為彼此相鄰,亦可相互結合或是耦合。在許多情況之中,將均熱板附加至該熱源上是有益的。可以硬焊、焊接(Soldering)、化學結合、膠合等方式或是任何其他化學或是機械附加裝置來進行前述附加程序。硬焊法可相較其他附加材料有較佳的熱傳導效率,且因此可增加均熱板的效率。 In addition to the soaking plates described herein, the present invention also includes a cooling unit for transferring heat away from a heat source. As shown in FIG. A, a soaking plate 12 formed according to the principles discussed herein may be disposed in thermal contact with a heat source, which may be a central processor 14 and a heat sink 16. The heat spreader transfers heat generated by the central processor to the heat sink. The materials and structures of the heat sink can be of various materials and configurations known to those of ordinary skill in the art to which the present invention pertains. For example, aluminum and copper are known heat sink materials, and as shown in FIG. A, the heat sink can include a plurality of heat sink fins 18. When the heat transfer plate is used to quickly and efficiently transfer the heat of the central processor, the heat sink can absorb Heat, and the fins help to dissipate heat into the surrounding environment. A variety of different heat sinks, heat sources, and contact structures between the soaking plates can be employed depending on the particular result to be achieved. For example, the above-mentioned elements such as the heat equalizing plate may be disposed adjacent to each other, or may be coupled or coupled to each other. In many cases, it may be beneficial to attach a soaking plate to the heat source. The foregoing additional procedures may be performed by brazing, soldering, chemical bonding, gluing, or any other chemical or mechanical attachment. The brazing method has better heat transfer efficiency than other additional materials, and thus can increase the efficiency of the heat equalizing plate.
雖然該熱沉16如圖所示般具有數片散熱鰭片,惟應當了解本發明能利用任何發明所屬技術領域具有通常知識者已知的熱沉。美國第6,538,892號專利案中已有討論已知的熱沉範例,該專利案整合於本文中以作為參考。在本發明一方面,該熱沉包含一熱管,該熱管具有一內部工作流體。美國第6,517,221號專利案中已有討論熱管熱沉範例,該專利案整合於本文中以作為參考。 Although the heat sink 16 has a plurality of fins as shown, it should be understood that the present invention can utilize any heat sink known to those of ordinary skill in the art to which the invention pertains. A known example of a heat sink is discussed in U.S. Patent No. 6,538,892, the disclosure of which is incorporated herein by reference. In one aspect of the invention, the heat sink includes a heat pipe having an internal working fluid. An example of a heat pipe heat sink is discussed in U.S. Patent No. 6,517,221, the disclosure of which is incorporated herein by reference.
如第一B圖所示,在本發明一方面,該均熱板12可為至少一部分嵌入於該熱沉以及或是該熱源之中。以此方式,不僅可以將熱透過均熱板底部轉移到該熱沉,亦可將熱至少一部分透過均熱板側面轉移到該熱沉。在嵌入熱沉之後,該均熱板可以壓迫緊配方法(Compression Fit)固定在熱沉之中。以此方式,不需要結合材料或是硬焊材料存在於均熱板與熱沉之間,結合或是硬焊材料會如同障礙物般阻礙從均熱板到熱沉的熱傳輸。 As shown in FIG. B, in one aspect of the invention, the heat equalizing plate 12 can be at least partially embedded in the heat sink and or the heat source. In this way, not only can the heat transfer through the bottom of the heat equalizing plate to the heat sink, but also at least a portion of the heat can be transferred to the heat sink through the side of the heat equalizing plate. After being embedded in the heat sink, the heat equalizing plate can be fixed in the heat sink by a Compression Fit. In this way, no bonding material or brazing material is required to exist between the soaking plate and the heat sink, and the bonding or brazing material will block the heat transfer from the soaking plate to the heat sink as an obstacle.
雖然均熱板可以本發明所屬技術領域者以各種機制固 定在熱沉,在一方面該均熱板以熱誘導壓縮方法(Thermally Induced Compression Fit)固定在該熱沉之中。在此實施例之中,該熱沉可加熱到一溫度來膨脹熱沉上的一開口。該均熱板可接著安裝於該膨脹的開口,且熱沉接著進行冷卻。在對具有相對高的熱膨脹係數的熱沉進行冷卻後,熱沉會圍著均熱板進行收縮且誘導壓縮作用以將均熱板嵌入固定在熱沉之中而無須任何介於兩者之間的結合材料。亦可使用機械摩擦方法來將均熱板固定在熱沉之中。 Although the soaking plate can be solidified by various mechanisms in the technical field of the present invention In the heat sink, on the one hand, the soaking plate is fixed in the heat sink by a thermally induced compression method (Thermally Induced Compression Fit). In this embodiment, the heat sink can be heated to a temperature to expand an opening in the heat sink. The soaking plate can then be mounted to the expanded opening and the heat sink is then cooled. After cooling the heat sink having a relatively high coefficient of thermal expansion, the heat sink will contract around the soaking plate and induce compression to embed the heat equalizing plate in the heat sink without any intervening therebetween The combination of materials. A mechanical friction method can also be used to secure the soaking plate in the heat sink.
如第一C圖所示,在本發明之一方面,該熱沉可包含一熱管22,該熱管22具有一內部工作流體(圖中未示)。該內部工作流體可為本發明所屬技術領域具有通常知識者已知的任何內部工作流體,且在一方面其為水或是水蒸氣。該熱管可大致上為密封狀態以將該工作流體維持於熱管內部。該均熱板可設置為靠近熱管,且在一方面該均熱板可硬焊到該熱管上。在第一C圖的實施例之中,該均熱板貫穿熱管的外壁以使得均熱板底部直接接觸該工作流體,如硬焊處26所示,藉此可輔助維持熱管的密閉狀態。 As shown in Figure C, in one aspect of the invention, the heat sink can include a heat pipe 22 having an internal working fluid (not shown). The internal working fluid can be any internal working fluid known to those of ordinary skill in the art to which the invention pertains, and in one aspect it is water or water vapor. The heat pipe can be substantially sealed to maintain the working fluid inside the heat pipe. The heat equalizing plate may be disposed adjacent to the heat pipe, and on the one hand the heat equalizing plate may be brazed to the heat pipe. In the embodiment of Figure C, the soaking plate extends through the outer wall of the heat pipe such that the bottom of the soaking plate directly contacts the working fluid, as shown by the brazed portion 26, thereby assisting in maintaining the sealed state of the heat pipe.
當該均熱板是直接接觸該工作流體時,工作流體可更有效率地將熱轉移離開均熱板。在如第一c圖所示的實施例之中,該工作流體(本實施例為水,圖中未示)接觸均熱板,且當吸收來自於均熱板的熱時,工作流體進行蒸發。水蒸氣接著在熱管底部凝結形成液體,在此之後,由於毛細現象,該液體會回流24於銜接均熱板的熱管外壁處,接著工作流體會再度蒸發並且重複地循環。由於熱管的外壁是以具有高熱傳導係數的材料所製造,因此熱可由熱管外 壁逸散到周圍空氣之中。 When the soaking plate is in direct contact with the working fluid, the working fluid can transfer heat away from the soaking plate more efficiently. In the embodiment as shown in Fig. c, the working fluid (water in the present embodiment, not shown) contacts the heat equalizing plate, and when the heat from the soaking plate is absorbed, the working fluid evaporates. . The water vapor then condenses at the bottom of the heat pipe to form a liquid, after which, due to the capillary phenomenon, the liquid is recirculated 24 at the outer wall of the heat pipe that connects the heat equalizing plates, and then the working fluid is again evaporated and repeatedly circulated. Since the outer wall of the heat pipe is made of a material having a high heat transfer coefficient, the heat can be made outside the heat pipe The wall escapes into the surrounding air.
由於先前的使用、尺寸、材料、成本以及其他考量,其可在該金屬塊體上設置有益的類鑽碳。類鑽碳之型態可為一單層結構而以物理性以及/或是化學性地附加方式至該金屬塊體的一側或是多側或是表面上。相較於該金屬塊體的表面,該類鑽碳可更有效率地將來自於均熱板的熱輻散到空氣中。因此,使用至少一類鑽碳層可特別有益於缺少熱沉的結構。在一實施例之中,該由鑽石顆粒組成的單層結構可位於該金屬塊體上較靠近該熱源處,且一類鑽碳層可位於該金屬塊體上相對該熱源處。在此結構中,熱能可由熱源處流動通過鑽石顆粒(可能在通過鑽石顆粒之前先行通過一特定量的金屬塊體),通過金屬塊體的一部分,且接著由類鑽碳層處逸散入周圍環境之中,例如逸散入空氣之中。雖然使用類鑽碳可能提供更多的益處給不具熱沉的結構,但類鑽碳層仍可使用於具有熱沉的實施例。類鑽碳層亦可設置在金屬塊體上並藉於該熱源與由鑽石顆粒組成的單層結構之間。 Due to previous use, size, materials, cost, and other considerations, it is possible to provide beneficial diamond-like carbon on the metal block. The diamond-like carbon type may be a single layer structure and physically or/or chemically attached to one or more sides or surfaces of the metal block. Compared to the surface of the metal block, the diamond-like carbon can more efficiently dissipate heat from the soaking plate into the air. Therefore, the use of at least one type of drilled carbon layer can be particularly beneficial for structures that lack heat sinks. In one embodiment, the single layer structure consisting of diamond particles can be located on the metal block closer to the heat source, and a type of drilled carbon layer can be located on the metal block relative to the heat source. In this configuration, thermal energy can flow from the heat source through the diamond particles (possibly through a specific amount of metal block before passing through the diamond particles), through a portion of the metal block, and then escape from the diamond-like carbon layer into the surrounding area. In the environment, for example, escape into the air. While the use of diamond-like carbon may provide more benefits to structures that do not have a heat sink, the diamond-like carbon layer can still be used in embodiments with heat sinks. The diamond-like carbon layer may also be disposed on the metal block and between the heat source and the single layer structure composed of diamond particles.
根據本發明,一均熱板製造方法可包含將複數鑽石顆粒配置為一單層結構,該單層結構具有單一鑽石顆粒的厚度。此單層結構具有一個鑽石顆粒的厚度。在該單層結構中,鑽石顆粒以上下堆疊方式配置時,甚至是兩個較小的鑽石顆粒相互堆疊且整體堆疊高度等於一由較大鑽石顆粒所組成的單層結構的高度時,該具有堆疊式鑽石顆粒的單層結構仍視為單層而非複數層。該單層結構由一金屬塊體所包覆。除了單層結構中的鑽石顆粒之外,該金屬塊體可 大致上不包含鑽石顆粒。 In accordance with the present invention, a method of making a soaked plate can include configuring a plurality of diamond particles into a single layer structure having a thickness of a single diamond particle. This single layer structure has a thickness of one diamond particle. In the single layer structure, when the diamond particles are arranged in a stacked manner above, even when two smaller diamond particles are stacked on each other and the overall stack height is equal to the height of a single layer structure composed of larger diamond particles, The single layer structure of stacked diamond particles is still considered a single layer rather than a multiple layer. The single layer structure is covered by a metal block. In addition to the diamond particles in a single layer structure, the metal block can It does not contain diamond particles in general.
第二圖顯示本發明一實施例,其中該均熱板30接觸該熱源36。圖中所示的熱源36具有一平坦表面能夠較容易地與一大致上平坦的均熱板作熱接觸。如圖所示,該均熱板30包含一由鑽石顆粒32組成的單層結構。該由鑽石顆粒組成的單層結構被一金屬塊體34所包覆,該金屬塊體作用為固結鑽石顆粒。 The second figure shows an embodiment of the invention in which the heat equalizing plate 30 contacts the heat source 36. The heat source 36 shown in the figures has a flat surface that is relatively easily in thermal contact with a substantially flat soaking plate. As shown, the heat equalizing plate 30 comprises a single layer structure comprised of diamond particles 32. The single layer structure consisting of diamond particles is covered by a metal block 34 which acts to consolidate the diamond particles.
請參照第七圖,為了增加鑽石顆粒32d的填充效率,鑽石顆粒32d可為立方體型之方晶鑽石,如第七圖所示。 Referring to the seventh figure, in order to increase the filling efficiency of the diamond particles 32d, the diamond particles 32d may be cubic cube-shaped diamonds, as shown in the seventh figure.
同樣地,一將熱轉自一熱源轉移離開的方法可包含:將一熱源的熱能吸取到一均熱板之中,其中該熱源以及均熱板相互熱接觸。更詳細而言,熱能可被吸取到一均熱板的鑽石層之中,且接著被傳導到一金屬塊體中。此外,可將熱沉附加到一熱沉或是熱管上。此附加程序可供熱能由該均熱板(例如金屬塊體的部分)轉移到該熱沉或是熱管上。 Similarly, a method of transferring heat away from a heat source can include: drawing thermal energy from a heat source into a heat equalizing plate, wherein the heat source and the heat equalizing plate are in thermal contact with each other. In more detail, thermal energy can be drawn into the diamond layer of a soaking plate and then conducted into a metal block. In addition, the heat sink can be attached to a heat sink or heat pipe. This additional procedure allows thermal energy to be transferred from the soaking plate (e.g., a portion of the metal block) to the heat sink or heat pipe.
可使用填充技術來增進填充效率以及由鑽石顆粒組成的單層結構的熱傳輸特性。此技術一般可包含機械配置以及/或是擾動(Agitation,例如震動)。如以下範例所示,可透過一黏性層或是黏著層或薄膜黏取一層鑽石顆粒而形成一具有自由鑽石顆粒的塊體,藉此形成一由鑽石顆粒組成的單層結構。隨後可自該塊體移除黏性層以完成一由鑽石顆粒組成的單層結構。 Filling techniques can be used to improve the packing efficiency and the heat transfer characteristics of a single layer structure composed of diamond particles. This technique may generally include mechanical configuration and/or agitation (eg, vibration). As shown in the following example, a layer of diamond particles can be formed by adhering a layer of diamond particles through an adhesive layer or an adhesive layer or film, thereby forming a single layer structure composed of diamond particles. The viscous layer can then be removed from the block to complete a single layer structure consisting of diamond particles.
該由鑽石顆粒組成的單層結構被一金屬塊體所包覆。此包覆程序可包含將一填隙材料(Interstitial Material)設置 在至少一部分鑽石顆粒之間。該填隙材料可被導入其他製程之中,熔滲於由鑽石顆粒組成的層結構之中,並且接著進行電沉積。可透過電沉積程序在水溶液之中將填隙材料(例如銀、銅以及鎳)導入鑽石顆粒層之中。在此程序之中大致上不在沉積金屬與鑽石之間產生任何化學鍵結。前述所提供的金屬通常置放於一酸性溶液之中,且可為本發明所屬技術領域具有通常知識者使用。亦可加入許多元素以減少溶液的表面張力,或者增加溶液對於孔洞的滲透性。 The single layer structure composed of diamond particles is covered by a metal block. This coating procedure can include setting an Interstitial Material Between at least a portion of the diamond particles. The interstitial material can be introduced into other processes, infiltrated into a layer structure composed of diamond particles, and then electrodeposited. Interstitial materials (e.g., silver, copper, and nickel) can be introduced into the diamond particle layer in an aqueous solution by an electrodeposition process. In this procedure, there is generally no chemical bond between the deposited metal and the diamond. The metals provided above are typically placed in an acidic solution and may be used by those of ordinary skill in the art to which the invention pertains. Many elements can also be added to reduce the surface tension of the solution or to increase the permeability of the solution to the pores.
關於熔滲,應當考量該製程會如何不當影響鑽石顆粒,本發明的配置使得鑽石相較其他均熱板的結構更為堅固。由於單一層結構的配置,在於製程條件中熔滲鑽石顆粒僅需要少許時間,因此減少了鑽石顆粒暴露於具有潛在傷害性的條件的時間。此外,使用整體有較高品質的鑽石顆粒意味著鑽石顆粒較不會被此侵略性的製程所損害,也因此更是比較不會發生逆相變。另一考量是必須小心選用填隙材料以避免熔滲溫度或是燒結溫度過高而損壞鑽石。因此,在本發明一方面,該填隙材料可為一能夠在低於大約攝氏1100度以下熔融或是燒結的合金。當高於此溫度時,應縮短此製程時間以避免過度損毀鑽石顆粒。鑽石顆粒內的金屬內含物會自其內部產生裂痕,而造成鑽石顆粒損毀。人造鑽石大多會包含一金屬催化劑(例如鐵、鈷、鎳或是其合金)以作為內含物。這些金屬內含物具有高熱膨脹係數,且其可讓鑽石顆粒逆相變回石墨碳。因此,在高溫下,鑽石可因金屬內含物的不同熱膨脹率而產生裂縫,或者由鑽石逆相變回碳。然而,可透過在高壓下在鑽 石的穩定區域內對鑽石進行熔滲來大致上消除逆相變的問題,例如在大於大約50億帕(5GPa)的高壓下。 With regard to infiltration, it should be considered how the process would improperly affect the diamond particles. The configuration of the present invention makes the diamond more robust than other homogeneous plates. Due to the configuration of the single layer structure, it takes only a small time to infiltrate the diamond particles in the process conditions, thereby reducing the time during which the diamond particles are exposed to potentially harmful conditions. In addition, the use of higher quality diamond particles as a whole means that the diamond particles are less likely to be damaged by this aggressive process, and therefore less adverse phase transformation. Another consideration is that the interstitial material must be carefully selected to avoid infiltration temperatures or excessive sintering temperatures that can damage the diamond. Thus, in one aspect of the invention, the interstitial material can be an alloy that can be melted or sintered below about 1100 degrees Celsius. When above this temperature, this process time should be shortened to avoid excessive damage to the diamond particles. Metal inclusions in the diamond particles can cause cracks in the interior of the diamond particles, causing damage to the diamond particles. Most of the synthetic diamonds contain a metal catalyst (such as iron, cobalt, nickel or alloys thereof) as inclusions. These metal inclusions have a high coefficient of thermal expansion and allow the diamond particles to reverse phase back to graphite carbon. Therefore, at high temperatures, diamonds may crack due to different rates of thermal expansion of the metal inclusions, or may be reversed from carbon to carbon. However, it can be drilled under high pressure Diamonds are infiltrated in the stable region of the stone to substantially eliminate the problem of reverse phase transformation, for example at high pressures greater than about 5 billion Pascals (5 GPa).
為了將鑽石的品質下降程度減到最小,寧可在低於攝氏1100度下或是在高壓下鑽石的穩定區域內進行熔滲。上述鐵、鎳以及鈷的某些合金以及銅、鋁以及銀的大多數合金能夠在此範圍內熔融。在一填隙材料的熔滲期間,熱金屬不可避免的會引起鑽石品質的小許下降。然而,可透過減少熔滲的時間以及慎選填隙材料等方式將品質下降的問題最小化。 In order to minimize the degradation of the quality of the diamond, it is preferred to infiltrate at a temperature below 1100 degrees Celsius or in a stable region of the diamond under high pressure. Certain alloys of iron, nickel, and cobalt described above, as well as most alloys of copper, aluminum, and silver, are capable of melting within this range. During the infiltration of a gap filler material, the hot metal inevitably causes a small drop in the quality of the diamond. However, the problem of quality degradation can be minimized by reducing the time of infiltration and carefully selecting the interstitial material.
雖然在高溫高壓條件下鑽石可能會損毀或是逆相變回碳,在一實施例之中,可在一少於大約攝氏1000度的溫度下進行熔滲。同樣地,可在真空或是還原(Reducing)條件下進行熔滲。使用一真空氣氛或是還原氣氛,例如氫氣,亦可避免熔融金屬材料的氧化。氧化亦會減少一金屬材料的熱傳導率,且因此氧化是不利均熱板的。在一方面,該由鑽石顆粒組成的單層結構可形成在一金屬基材或是薄膜上,且接著可以一金屬材料熔滲入鑽石顆粒中。此熔滲可結合該金屬基材或是薄膜,因而形成一固態的均熱板。該金屬基材以及金屬熔滲材料可為相同或是相異材料。前述例子如第三圖所示。兩分離的金屬材料層38,40包覆該由鑽石顆粒32a所組成的單層結構。該均熱板30a熱接觸於一熱源36a。特別地,該金屬材料層40與熱源36a相互接觸。如第三圖所示的實施例,鑽石顆粒大致上被其中一金屬材料給包覆。或者,鑽石顆粒可被多於一個以上的金屬材料所包覆。此外,第三圖顯示了如前所述之具有不同尺 寸的鑽石顆粒。該單層結構是具有一個鑽石顆粒的厚度,此結構不同於以多個鑽石顆粒堆疊出整個厚度的鑽石複合層。 Although the diamond may be damaged or reversely transformed back to carbon under high temperature and high pressure conditions, in one embodiment, infiltration may be performed at a temperature of less than about 1000 degrees Celsius. Similarly, infiltration can be carried out under vacuum or reducing conditions. Oxidation of the molten metal material can also be avoided by using a vacuum atmosphere or a reducing atmosphere such as hydrogen. Oxidation also reduces the thermal conductivity of a metallic material, and thus oxidation is unfavorable for the soaking plate. In one aspect, the single layer structure comprised of diamond particles can be formed on a metal substrate or film, and then a metal material can be infused into the diamond particles. This infiltration can be combined with the metal substrate or film to form a solid soaking plate. The metal substrate and the metal infiltrated material may be the same or different materials. The foregoing example is shown in the third figure. Two separate layers of metal material 38, 40 enclose the single layer structure comprised of diamond particles 32a. The heat equalizing plate 30a is in thermal contact with a heat source 36a. Specifically, the metal material layer 40 and the heat source 36a are in contact with each other. As in the embodiment illustrated in the third figure, the diamond particles are substantially covered by one of the metallic materials. Alternatively, the diamond particles may be coated with more than one metal material. In addition, the third figure shows the different feet as described above. Inch diamond particles. The single layer structure has a thickness of one diamond particle which is different from a diamond composite layer in which a plurality of diamond particles are stacked to the entire thickness.
第四圖顯示一均熱板30b,其具有一縮短的鑽石顆粒層32b。該鑽石顆粒層32b並未完全延伸到整個均熱板的長度。反之,其尺寸上限制在近似熱源36b的尺寸。由於均熱板中的鑽石顆粒成本愈來愈昂貴,前述結構是非常經濟的做法。此實施例包含金屬材料42,其令均熱板延展為塊狀。該金屬材料42可與包覆鑽石顆粒層的金屬材料34b相同,亦可完全不同。 The fourth figure shows a soaking plate 30b having a shortened diamond particle layer 32b. The diamond particle layer 32b does not extend completely to the length of the entire soaking plate. On the contrary, it is limited in size to approximate the size of the heat source 36b. The aforementioned structure is very economical because the cost of diamond particles in the soaking plate is becoming more and more expensive. This embodiment includes a metallic material 42 that extends the soaking plate into a block shape. The metal material 42 may be the same as the metal material 34b covering the diamond particle layer, or may be completely different.
在一方面,可製造一均熱板,其包含一由鑽石顆粒組成的單層結構,其中該由鑽石顆粒組成的單層結構是沿著均熱板的一表面。該鑽石顆粒可固結,且該均熱板包含一金屬材料,因此創造了均熱板由一側(鑽石顆粒層)到另一相對側(金屬材料)的熱傳導率差異。在鑽石表面或是尖端暴露的表面處可接觸一熱源。此外,可在該由鑽石顆粒組成的單層結構上附加一聚晶鑽石層。 In one aspect, a soaking plate can be fabricated that includes a single layer structure of diamond particles, wherein the single layer structure of diamond particles is along a surface of the soaking plate. The diamond particles can be consolidated and the soaking plate comprises a metallic material, thus creating a difference in thermal conductivity of the soaking plate from one side (diamond particle layer) to the other opposite side (metal material). A heat source can be contacted at the surface of the diamond or at the exposed surface of the tip. Further, a polycrystalline diamond layer may be attached to the single layer structure composed of diamond particles.
前述內容已呈現本發明均熱板、熱管理系統、均熱板製造方法以及均熱板使用方法。傳統使用鑽石的均熱板相較本發明較為昂貴且效率較差。以化學氣相沉積法製造的鑽石薄膜或是鑽石層非常耗時以及耗費成本。或者,有些含鑽石的均熱板是採用鑽石顆粒。然而,這些鑽石顆粒是以複合物的方式呈現,使用大量的鑽石顆粒分布在該複合物之中。前述設計是以增加的體積容量來增加熱傳導率。當然,使用大量的鑽石時,是採用較低等級的鑽石來降低 整體成本。此外,在一實施例之中,該鑽石顆粒層是策略性地運用最需要它的部位,即是熱源上最熱點的位置處。使用限量策略性地放置的較高品質的鑽石最終可大大地減少均熱板的成本並且讓均熱板能夠具有相同或是更高的熱能轉移能力。 The foregoing has presented the soaking plate, the thermal management system, the soaking plate manufacturing method, and the method of using the soaking plate of the present invention. Conventional use of diamond-like soaking plates is more expensive and less efficient than the present invention. Diamond film or diamond layers made by chemical vapor deposition are time consuming and costly. Alternatively, some diamond-containing soaking plates use diamond particles. However, these diamond particles are presented in the form of a composite in which a large amount of diamond particles are distributed. The foregoing design increases the thermal conductivity with increased volumetric capacity. Of course, when using a large number of diamonds, lower grade diamonds are used to lower Overall cost. Moreover, in one embodiment, the diamond particle layer is strategically utilized where it is most needed, i.e., at the hottest spot on the heat source. The use of a limited amount of strategically placed higher quality diamonds can ultimately greatly reduce the cost of the soaking plates and allow the soaking plates to have the same or higher thermal transfer capabilities.
此外,本文中所提到的均熱板可相較先前設計具有更高的填充效率且更容易製造。直觀地,以單層結構方式填充鑽石顆粒相較以三維形式配置鑽石顆粒來的更為容易。要將鑽石顆粒填充到達三維體積的三分之二是極為困難的事。反之,該單層結構設計可採用不同的顆粒方式填充甚至採用不同的顆粒方向,藉此可增加均熱板的熱傳導率。該單鑽石層的固結與製程需要較少的熔滲時間,且可在低溫以及/或是低壓下執行有效率的熔滲,因此相較傳統鑽石複合均熱板而言較不會在製程中損壞鑽石顆粒。由於不會在製程中損壞或是損傷鑽石顆粒,因此不會降低鑽石顆粒的熱傳導率,對傳統製程而言鑽石顆粒熱傳導率下降是常有的事。 Furthermore, the soaking plates mentioned herein can have higher filling efficiencies and are easier to manufacture than previous designs. Intuitively, it is easier to fill the diamond particles in a single layer structure than to arrange the diamond particles in three dimensions. It is extremely difficult to fill the diamond particles to two-thirds of the three-dimensional volume. Conversely, the single-layer structure design can be filled with different particle methods or even with different particle directions, thereby increasing the thermal conductivity of the soaking plate. The consolidation and processing of the single diamond layer requires less infiltration time and can perform efficient infiltration at low temperatures and/or low pressures, so that it is less in process than conventional diamond composite heat spreaders. Damaged diamond particles. Since the diamond particles are not damaged or damaged during the process, the thermal conductivity of the diamond particles is not lowered, and it is common for the conventional process to reduce the thermal conductivity of the diamond particles.
本設計的另一優點是可令均熱板與熱源之間有較佳的熱連接性。在以鑽石層更靠近熱源的實施例之中,均熱板的熱膨脹係數經特別設計而適用連接熱源以及熱沉。其熱膨脹係數在有鑽石的一側較低,即是較靠近熱源的一側的熱膨脹係數較低,反之,在靠近熱沉或是熱管處的熱膨脹係數較高。此為一可供長時間連接的理想結構。當熱膨脹率不相符時,由於熱的變化所導致的反覆膨脹與收縮會使連接處破裂與損毀。任何介於熱源與均熱板之間的破裂或 是孔洞均會大大地減少系統的效率。在均熱板與一熱沉或是熱管相連接的一側亦是適用同樣的原理。一般鑽石複合物,在其二連接處是具有一均勻一致或是至少相似的熱膨脹係數。文中所呈現的均熱板,有效率地橋接熱膨脹係數的梯度,並且能提供耐用與耐久的連接結構。 Another advantage of this design is that it provides better thermal connectivity between the soaking plate and the heat source. In the embodiment in which the diamond layer is closer to the heat source, the coefficient of thermal expansion of the soaking plate is specifically designed to be suitable for connecting the heat source and the heat sink. The coefficient of thermal expansion is lower on the side with the diamond, that is, the coefficient of thermal expansion is lower on the side closer to the heat source, and conversely, the coefficient of thermal expansion is higher near the heat sink or the heat pipe. This is an ideal structure for long-term connections. When the coefficient of thermal expansion does not match, the repeated expansion and contraction due to the change in heat may cause the joint to rupture and be destroyed. Any rupture between the heat source and the soaking plate or It is the hole that will greatly reduce the efficiency of the system. The same principle applies to the side where the soaking plate is connected to a heat sink or heat pipe. A typical diamond composite has a uniform or at least similar coefficient of thermal expansion at its two junctions. The soaking plates presented herein efficiently bridge the gradient of the coefficient of thermal expansion and provide a durable and durable joint structure.
下列範例呈現本發明各種不同的均熱板製造方法。這些範例僅供說明用,而非用於限制本發明。 The following examples illustrate various different soaking plate manufacturing methods of the present invention. These examples are for illustrative purposes only and are not intended to limit the invention.
在丙酮之中透過超音波震動對通過30/40美國網目尺寸(Element Six SDB1100)的鑽石顆粒進行徹底清潔。以一100微米厚的還原銅薄膜設置在一鋼製托盤上。以一25微米厚的雙面黏著層附著到該銅薄膜上。將鑽石顆粒散佈到黏著層頂面,且以超音波震動方式擾動鑽石顆粒以增加填充效率。翻轉該托盤以去除未黏附於該黏著層的鑽石顆粒。一旦去除鬆弛的鑽石顆粒,該托盤則再次翻轉到原先狀態。將一2毫米厚的純鋁板放置到鑽石顆粒的頂端。前述配置如第五A圖所示,其中具有黏著層46的銅層包括一由鑽石顆粒48所組成的單層結構,該單層結構被一鋁板50所覆蓋。將該托盤放置到一真空熔爐之中加熱達到攝氏680度。鋁材料熔滲入鑽石顆粒間的間隙之中。對該托盤進行冷卻。冷卻後,鋁固結鑽石顆粒,且堅固地結合該銅薄膜。均熱板的成品如第五B圖,其與第三圖相似。 Thoroughly clean the diamond particles passing through the 30/40 US mesh size (Element Six SDB1100) by ultrasonic vibration in acetone. A 100 micron thick reduced copper film was placed on a steel tray. A 25 micron thick double-sided adhesive layer was attached to the copper film. The diamond particles are spread on the top surface of the adhesive layer, and the diamond particles are disturbed by ultrasonic vibration to increase the filling efficiency. The tray is flipped to remove diamond particles that are not adhered to the adhesive layer. Once the loose diamond particles are removed, the tray is flipped again to its original state. Place a 2 mm thick pure aluminum plate on top of the diamond particles. The foregoing configuration is as shown in FIG. 5A, in which the copper layer having the adhesive layer 46 includes a single layer structure composed of diamond particles 48 covered by an aluminum plate 50. The tray was placed in a vacuum furnace and heated to 680 degrees Celsius. The aluminum material penetrates into the gap between the diamond particles. The tray is cooled. After cooling, the aluminum solidifies the diamond particles and firmly bonds the copper film. The finished product of the soaking plate is as shown in Figure 5B, which is similar to the third figure.
本範例接續範例一的製程,惟在導入鑽石顆粒之前, 先將複數銅片放到黏著層上。可調整銅片配置狀態產生20平方毫米暴露於外的黏著層。 This example continues with the process of Example 1, except before the introduction of diamond particles. Put multiple copper pieces on the adhesive layer first. The adjustable copper configuration results in an exposed layer of 20 square millimeters exposed.
一旦拖盤進行冷卻,則將鋁的頂面磨成光滑狀,將該板材沿著該作為分隔用的銅片的中線進行線切割(Wire Electrical Discharge Machining,Wire-EDM)。透過前述切割形成複數大約40毫米的均熱板。每塊均熱板大概包含1600個晶體(大概4克拉(Carats),成本在美金80分),各晶體平坦穩固地嵌入於銅薄膜上。第六圖顯示本範例一具有複數均熱板56的示範性板體52,該板體尚未進行切割。銅片54(被鋁所覆蓋)對各個均熱板56進行區隔,各均熱板56具有單一鑽石層。 Once the tray is cooled, the top surface of the aluminum is ground to a smooth shape, and the sheet is wire-cut along the center line of the copper sheet for separation (Wire Electrical Discharge Machining, Wire-EDM). A plurality of soaking plates of about 40 mm are formed through the foregoing cutting. Each piece of hot plate contains about 1600 crystals (about 4 carats, cost 80 US dollars), and each crystal is flat and firmly embedded in the copper film. The sixth figure shows an exemplary panel 52 having a plurality of heat equalizing plates 56 that have not been cut. A copper sheet 54 (covered by aluminum) separates each of the heat equalizing plates 56, each of which has a single diamond layer.
此均熱板可直接焊接到一電腦晶片以及/或是焊接到一熱沉或一熱管。該鑽石層的熱傳導率是大約1000瓦/米.度(W/mK),大約高於銅熱傳導率的2.5倍以上,如此高熱傳導率可有效地即時移除電腦晶片上的熱點。該熱由鑽石顆粒的另一側傳遞到鋁塊體中,且進一步傳輸到所連接的熱沉或是熱管上。 The heat spreader can be soldered directly to a computer chip and/or soldered to a heat sink or a heat pipe. The diamond layer has a thermal conductivity of approximately 1000 watts/meter. Degree (W/mK), which is more than 2.5 times higher than the thermal conductivity of copper. Such high thermal conductivity effectively removes hot spots on the computer chip. This heat is transferred from the other side of the diamond particles to the aluminum block and further to the connected heat sink or heat pipe.
本範例步驟幾乎如範例一所述,惟在鋁中設置有熔融的矽,且在攝氏1450度下進行熔滲。其最終產品相對導電性的銅而言是一電絕緣體。此外,其複合物的熱膨脹率小於範例一的熱膨脹率。 This example procedure is almost as described in Example 1, except that molten tantalum is placed in the aluminum and infiltrated at 1450 degrees Celsius. Its final product is an electrical insulator relative to conductive copper. Further, the thermal expansion coefficient of the composite is smaller than that of the first example.
若是在熔滲物與銅薄膜之間發生過度的擴散現象,則會降低熱傳導率。此外,該銅薄膜會因此溶解。在此例子之中,可在該銅薄膜上塗佈一層更耐火的金屬而成為一化 學阻障物。舉例而言,可在該銅薄膜上濺鍍一層鎢。鎢的熱傳導率不低,且非常的薄(例如數奈米厚),因此可忽略其熱阻力。 If excessive diffusion occurs between the infiltrated material and the copper film, the thermal conductivity is lowered. In addition, the copper film is thus dissolved. In this example, a layer of more refractory metal can be coated on the copper film to become a chemical Learn about obstacles. For example, a layer of tungsten can be sputtered onto the copper film. The thermal conductivity of tungsten is not low and is very thin (for example, several nanometers thick), so its thermal resistance can be ignored.
在具有邊框的鋁板上以震動方式將通過30/40美國網目尺寸(Element Six SDB1100)的鑽石顆粒填充為一整齊的單層結構。在填充好的鑽石層頂面放置有一矽晶圓(Wafer)。將該托盤放置到一真空爐且加熱到攝氏1450度達20分鐘。矽熔融且填滿鑽石顆粒之間的孔洞。該鋁板進行冷卻。對冷卻的鋁板表面進行研磨以使其平坦,因而能使其更容易附加到一熱源上。 The diamond particles passing through the 30/40 US mesh size (Element Six SDB1100) are vibrated into a neat single layer structure on a aluminum plate with a frame. A wafer (Wafer) is placed on the top surface of the filled diamond layer. The tray was placed in a vacuum oven and heated to 1450 degrees Celsius for 20 minutes. The crucible melts and fills the pores between the diamond particles. The aluminum plate is cooled. The surface of the cooled aluminum plate is ground to flatten it so that it can be more easily attached to a heat source.
本範例步驟大致上如範例四所述,惟矽晶圓替換為矽鋁合金。此外,熔滲在攝氏1000度下進行。 This example step is roughly as described in Example 4 except that the wafer is replaced by a tantalum aluminum alloy. In addition, the infiltration is carried out at 1000 degrees Celsius.
應了解的是,上述內容僅供說明本發明原理的應用。在不違背本發明範疇及精神的前提下,本發明所屬技術領域具有通常知識者可做出多種修改及不同的配置,且依附在後的申請專利範圍則意圖涵蓋這些修改與不同的配置。因此,當本發明中目前被視為是最實用且較佳之實施例的細節已被揭露如上時,對於本發明所屬技術領域具有通常知識者而言,可依據本文中所提出的概念與原則來作出而不受限於多種包含了尺寸、材料、外形、形態、功能、操作方法、組裝及使用上的改變。 It should be understood that the foregoing is merely illustrative of the application of the principles of the invention. Many modifications and different configurations are possible in the art to which the invention pertains without departing from the scope and spirit of the invention, and the scope of the appended claims is intended to cover such modifications. Therefore, when the details of the present invention which are presently regarded as the most practical and preferred embodiments have been disclosed as above, those having ordinary skill in the art to which the present invention pertains may be based on the concepts and principles set forth herein. Modifications are made without limitation to a variety of dimensions, materials, shapes, shapes, functions, methods of operation, assembly, and use.
12‧‧‧均熱板 12‧‧‧Homothermal board
14‧‧‧中央處理器 14‧‧‧Central processor
16‧‧‧熱沉 16‧‧‧ Heat sink
18‧‧‧散熱鰭片 18‧‧‧ Heat sink fins
22‧‧‧熱管 22‧‧‧ Heat pipe
26‧‧‧硬焊處 26‧‧‧ Hard soldering
30,30a,30b‧‧‧均熱板 30, 30a, 30b‧‧‧ hot plate
32,32a,32b,32d‧‧‧鑽石顆粒 32,32a,32b,32d‧‧‧ diamond particles
34,34b‧‧‧金屬塊體 34, 34b‧‧‧ metal block
36,36a,36b‧‧‧熱源 36, 36a, 36b‧‧‧ heat source
40‧‧‧金屬材料層 40‧‧‧Metal material layer
42‧‧‧金屬材料 42‧‧‧Metal materials
46‧‧‧黏著層 46‧‧‧Adhesive layer
48‧‧‧鑽石顆粒 48‧‧‧ Diamond particles
50‧‧‧鋁板 50‧‧‧Aluminum plate
第一A圖是本發明一均熱板實施例的示意圖,其中該 均熱板熱性連接一熱源以及一熱沉。 Figure 1A is a schematic view of an embodiment of a soaking plate of the present invention, wherein The soaking plate is thermally connected to a heat source and a heat sink.
第一B圖是本發明另一均熱板實施例的示意圖,其中該均熱板熱性連接一熱源以及一熱沉。 Figure 1B is a schematic view of another embodiment of a soaking plate of the present invention, wherein the soaking plate is thermally coupled to a heat source and a heat sink.
第一C圖是本發明另一均熱板實施例的示意圖,其中該均熱板熱性連接一熱源以及一熱沉。 The first C is a schematic view of another embodiment of the soaking plate of the present invention, wherein the soaking plate is thermally coupled to a heat source and a heat sink.
第二圖是本發明另一均熱板實施例的側面剖視圖,其中該均熱板相鄰一熱源。 The second figure is a side cross-sectional view of another embodiment of a soaking plate of the present invention, wherein the soaking plate is adjacent to a heat source.
第三圖是本發明另一均熱板實施例的側面剖視圖,其中該均熱板包含兩種不同的金屬材料,且相鄰一熱源。 The third figure is a side cross-sectional view of another embodiment of a soaking plate of the present invention, wherein the soaking plate comprises two different metallic materials and is adjacent to a heat source.
第四圖是本發明另一均熱板實施例的側面剖視圖,其中該均熱板包含一具有特定寬度的單層鑽石層。 Figure 4 is a side cross-sectional view of another embodiment of a soaking plate of the present invention, wherein the soaking plate comprises a single layer of diamond having a particular width.
第五A圖是本發明均熱板製造方法的一示範性初始步驟的側面剖視圖,其對應範例一。 Figure 5A is a side cross-sectional view of an exemplary initial step of the method of manufacturing a soaked plate of the present invention, corresponding to Example 1.
第五B圖是本發明均熱板製造方法的一示範性均熱板產品的側面剖視圖,其對應範例一。 Figure 5B is a side cross-sectional view of an exemplary soaking plate product of the method for producing a soaked plate of the present invention, which corresponds to Example 1.
第六圖是本發明均熱板製造方法的一示範性初始步驟的俯視立體外觀圖,其對應範例二。 The sixth drawing is a top perspective view of an exemplary initial step of the method for manufacturing a soaked plate of the present invention, which corresponds to Example 2.
第七圖是本發明另一均熱板實施例的側面剖視圖,其中該均熱板相鄰一熱源,其中鑽石顆粒為立方體型之方晶鑽石。 Figure 7 is a side cross-sectional view of another embodiment of a soaking plate of the present invention, wherein the soaking plate is adjacent to a heat source, wherein the diamond particles are cube-shaped square diamonds.
應了解的是,上述圖式僅作為示意用途以供他人進一步了解本發明。此外,上述圖式並非依照實際尺度而繪製,因此其尺寸、顆粒大小以及其他方面,通常誇大繪製來清楚彰顯本發明。因此,可針對上述圖式所顯示的尺寸與其他方面進行修改來製造本發明的均熱板。 It is to be understood that the above drawings are for illustrative purposes only and are intended to provide further understanding of the invention. Moreover, the above figures are not drawn in terms of actual dimensions, and thus their size, particle size, and other aspects are often exaggerated to clearly illustrate the invention. Accordingly, the heat spreader of the present invention can be fabricated with respect to the dimensions and other aspects shown in the above figures.
30‧‧‧均熱板 30‧‧‧Homothermal board
32‧‧‧鑽石顆粒 32‧‧‧ diamond particles
34‧‧‧金屬塊體 34‧‧‧Metal blocks
36‧‧‧熱源 36‧‧‧heat source
Claims (35)
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EP0391418A1 (en) * | 1989-04-06 | 1990-10-10 | Sumitomo Electric Industries, Ltd. | A diamond for a wire drawing die, dresser or heat-sink, a process for its manufacture, and a wire drawing die made therefrom |
US5008737A (en) * | 1988-10-11 | 1991-04-16 | Amoco Corporation | Diamond composite heat sink for use with semiconductor devices |
JPH1167991A (en) * | 1997-08-19 | 1999-03-09 | Sumitomo Electric Ind Ltd | Heat sink for semiconductor, and manufacture thereof |
TW200633169A (en) * | 2005-02-10 | 2006-09-16 | Chien-Min Sung | Carbonaceous composite heat spreader and associated methods |
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US4425195A (en) * | 1982-11-10 | 1984-01-10 | Martin Marietta Corporation | Method of fabricating a diamond heat sink |
US5008737A (en) * | 1988-10-11 | 1991-04-16 | Amoco Corporation | Diamond composite heat sink for use with semiconductor devices |
EP0391418A1 (en) * | 1989-04-06 | 1990-10-10 | Sumitomo Electric Industries, Ltd. | A diamond for a wire drawing die, dresser or heat-sink, a process for its manufacture, and a wire drawing die made therefrom |
JPH1167991A (en) * | 1997-08-19 | 1999-03-09 | Sumitomo Electric Ind Ltd | Heat sink for semiconductor, and manufacture thereof |
TW200633169A (en) * | 2005-02-10 | 2006-09-16 | Chien-Min Sung | Carbonaceous composite heat spreader and associated methods |
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