TWI394928B - A hot plate with single layer diamond particles and its related methods - Google Patents

Description

Soaking plate with single layer diamond particles and related method

The present invention relates to a carbon-containing composite device and a method of dissipating heat by conducting and absorbing heat from a heat source. Accordingly, the present invention relates to the fields of chemistry, physics, semiconductor technology, and materials science.

The development of the semiconductor industry follows the trend of Moore's Law proposed by Intel co-founder Gordon Moore in 1965. This trend indicates that the performance of integrated circuits (ICs) or general semiconductor chips doubles every 18 months.

Along with this progress, various design challenges have arisen. One of the often overlooked challenges is the heat issue. Often, this design for heat dissipation is ignored, or the design is added until the component is produced. According to the second law of thermodynamics, in a closed system, the more work, the more entropy is obtained. As the power of the central processing unit (CPU) increases, it produces more electrons that generate more heat. Therefore, in order to avoid short circuit or burnout of the circuit, heat generated by an increase in entropy must be removed. Some of the current technologies of central processing units have a power of about 70 watts or more. For example, a central processing unit manufactured by 0.13 micron technology can consume more than 100 watts of power. Current heat dissipation methods, such as the use of metal fin radiators (metals such as aluminum or copper) and water evaporation pipes, will not allow sufficient heat dissipation for the next generation of processors.

Recently, ceramic soaking plates (such as aluminum nitride) and metal composite soaking plates (such as tantalum carbide/aluminum) have been used to cope with increasing heat. however, The thermal conductivity of these materials is not greater than the thermal conductivity of copper, and therefore, these materials have limited heat dissipation capability for semiconductors.

Typical semiconductor wafers include closely packed metal conductors (such as aluminum, copper) and ceramic insulators (such as oxygen, nitrogen). The coefficient of thermal expansion of a metal is generally 5-10 times that of a ceramic. When the wafer is heated above 60 degrees Celsius, the difference in thermal expansion between the metal and the ceramic causes micro cracks. The repeated temperature rise and fall cycles cause damage to the wafer to deteriorate. As a result, the performance of the semiconductor will decrease. In addition, when the wafer temperature exceeds 90 degrees Celsius, the semiconductor portion in the wafer becomes a conductor, thus causing the function of the wafer to fail. In addition, the circuit may be damaged and the semiconductor can no longer be used (eg, "burned"). Therefore, in order to maintain the performance of the semiconductor, its temperature must be kept below a critical value (for example, 90 degrees Celsius).

The traditional method of heat dissipation is to have a metal heat sink contact the semiconductor. A typical heat sink is made of a few fins of Fins. A fan is attached to the plurality of fins. The heat generated by the wafer flows to the aluminum pedestal and is transferred to the heat sink fins, which are then carried away from the heat sink fins by circulating air convection. Heat sinks are therefore often designed to have a high heat capacity as a hot reservoir to remove heat from the heat source.

Alternatively, a heat pipe may be used to connect the heat sink to a radiator that is separated from the heat sink. The heat pipe is a vacuum tube sealed with water vapor. The moisture in the heat pipe evaporates at the heat sink and solidifies at the cooler. The solidified water will flow back to the heat sink through the capillary phenomenon generated by the porous medium (such as copper powder) in the heat pipe. Thus, the heat on a semiconductor wafer can be carried away by the evaporated moisture and the heat can be removed by the solidified moisture at the cooler.

Although heat pipes and hot plates can remove heat very efficiently, complex vacuum tube lumens and precision capillary systems prevent this heat pipe heat sink design from shrinking in size to directly dissipate heat from a semiconductor component. As a result, the heat pipe heat dissipation method is generally limited to heat conduction to a larger heat source, such as a heat sink. therefore. How to remove heat from an electronic component through heat conduction is an issue that is still being studied in the industry today.

Another option that has been found to be expected as a soaking plate is diamond-rich materials. Diamonds take heat more quickly than any other material. The thermal conductivity of a diamond at room temperature (approximately 2000 watts/meter. absolute temperature (W/mK)) is five times higher than the thermal conductivity of copper (approximately 400 W/mK) and is the thermal conductivity of aluminum (approximately 250 W/mK) Eight times as high, copper and aluminum are the most commonly used metal thermal conductors with high thermal conductivity. In addition, the diamond's Thermal Diffusivity (12.7 cm 2 /sec) is 11 times the copper thermal diffusivity (1.17 cm2/sec) or the copper thermal diffusivity (0.971 cm2/sec). The ability of diamonds to quickly remove heat without storing heat makes diamonds an ideal soaking plate. Compared to the heat sink, the soaking plate can quickly transfer heat away from the heat source without storing heat. Table 1 shows the thermal properties of various materials compared to diamonds (values at an absolute temperature of 300 degrees).

In addition, the coefficient of thermal expansion of diamonds is the lowest of all materials. The low thermal expansion of diamonds makes diamonds easier to combine with germanium semiconductors with low thermal expansion. Due to this feature, the pressure of the bonding interface between the diamond and the semiconductor can be minimized.

In recent years, diamond soaking plates have been used to dissipate heat from high power laser diodes, such as laser diodes, to enhance light energy in the fiber. However, large areas of diamonds are very expensive; therefore, in the past, diamonds were not used commercially to dissipate the central processing unit. In order to allow the diamond to act as a soaking plate, the surface of the diamond is polished to enable close contact with the semiconductor wafer. In addition, it can be metallized (e.g., through titanium/platinum/silver) for diamonds to be brazed to a conventional metal heat sink.

Many diamond soaking plates are currently manufactured from diamond films formed by Chemical Vapor Deposition (CVD). For example, a chemical vapor deposited diamond film is priced at more than $10/cm2, and polished and metallized diamond films are priced at twice the price. This high price condition makes diamond soaking plates unusable, except for applications that require only a small area of heat dissipation or no other better soaking plates (such as high power laser diodes). In addition to being expensive, chemical vapor deposited diamond films can only grow at very slow rates (e.g., a few microns per hour); therefore, these diamond films rarely exceed a thickness of one millimeter (typically about 0.3 to 0.5 mm). However, if it is a wafer Larger heat zones (such as central processing units) require a thicker heat spreader (for example, 3 mm).

In addition to diamond products made by chemical vapor deposition, attempts have been made to form a soaking plate using a single piece of particulate diamond or "Polycrystalline Diamond". Examples of such devices are disclosed in U.S. Patent No. 6,390,181 and U.S. Patent Application Serial No. No. No. No. No. No. No. No. No. No. In general, diamond particles are sintered by using cobalt as a sintering additive under high pressure (HPHT) conditions to form a PCD product (or a dense product). Alternatively, the ruthenium or ruthenium alloy may be used to entangle the diamond particles together as disclosed in U.S. Patent Nos. 4,124,401 and 4,534,773. The size of the diamond particles used in the general sintering procedure is in the size range of microns. Therefore, PCD compacts generally have a large number of particle boundaries, and each particle is coated with a low thermal conductivity second phase material. Since the physical specific heat of such a PCD compact is limited in transmission or heat conduction, it is ineffective as a soaking plate.

Therefore, it is still continuously researching and developing a cost-effective system and device that can effectively dissipate heat from a heat source.

Accordingly, the present invention provides a soaking plate that can be used to carry away heat from a heat source in a manner that draws or conducts heat. In one aspect, a soaking plate comprises a plurality of diamond particles, the plurality of diamond particles being configured in a single layer structure, and the single layer structure is coated with a metal block. The thickness of the diamond particle monolayer structure can be the thickness of a single particle. The metal block can effectively bond the diamond particles, and the metal block can be approximated except for the diamond particles in the single layer structure. Does not contain non-diamond particles. In another variation of the soaking plate, a diamond particle monolayer structure can have a single layer thickness, and wherein each diamond particle directly contacts another diamond particle. A metal block can co-consolidate the diamond particles on at least one side of the heat equalizing plate.

The aforementioned metal block is a single metal material.

The aforementioned metal block contains more than one metal material.

The aforementioned metal block comprises a plurality of layers of different metal materials.

The aforementioned metal block contains a metal alloy.

The aforementioned metal block contains a component selected from the group consisting of aluminum, ruthenium, copper, gold, silver, and alloys thereof.

The aforementioned metal block contains aluminum.

The aforementioned metal block comprises an aluminum-magnesium alloy.

At least a portion of the foregoing aluminum is anodized.

The aforementioned metal block contains ruthenium.

The aforementioned metal block is basically composed of aluminum or tantalum.

The aforementioned metal block comprises a mixture or alloy of aluminum and ruthenium.

The aforementioned diamond particles are high grade diamond particles.

The aforementioned diamond particles are substantially uniform in size or shape.

The aforementioned diamond particles are cube-shaped cubic diamonds.

The foregoing single layer structure composed of diamond particles is sintered by a spark plasma sintering method, and the sintering process is performed at a temperature lower than about 1200 degrees Celsius.

The aforementioned diamond particles are surface-modified by one of heat treatment, plasma treatment, and chemical solvent treatment.

The aforementioned diamond particles have a mesh size of from about 20 to about 100.

The aforementioned diamond particles have a mesh size of from about 30 to about 50.

The aforementioned single layer structure consisting of diamond particles is closer to one side of the metal block and further away from the other opposite side of the metal block.

The aforementioned filling efficiency of the single layer structure composed of diamond particles is about more than 50%.

The aforementioned filling efficiency of the single layer structure composed of diamond particles is about more than 80%.

The thickness of the aforementioned soaking plate is about 1.1 to 30 times the thickness of a single diamond particle.

The aforementioned single layer structure composed of diamond particles is infused with a metal material.

The aforementioned infiltration procedure is carried out at a temperature below about 1000 degrees Celsius.

The aforementioned infiltration procedure is carried out under vacuum conditions.

The aforementioned infiltration procedure is carried out at a pressure below 100 atmospheres.

The aforementioned soaking plate having a single layer of diamond particles further comprising a polycrystalline diamond layer attached to a surface of the soaking plate.

The aforementioned diamond particles are subjected to a hot pressing process having a pressure of from 100 MPa to 5.5 GPa and a temperature of from 700 to 1000 degrees Celsius.

The diamond particles are plated with an electroplated layer selected from the group consisting of titanium, chromium, nickel, copper, tungsten, vanadium, niobium, zirconium, molybdenum, and alloys thereof.

Similarly, the present invention provides a method of transferring heat from a heat source by a soaking plate comprising: adsorbing thermal energy from a heat source into a diamond layer of a soaking plate. As in the foregoing embodiments, the heat equalizing plate may comprise a diamond particle single layer structure having a thickness of a single particle. The heat energy of the heat source can be transmitted to a large A metal block that is coated and that holds the diamond particles together. Furthermore, the metal block may contain substantially no diamond particles in addition to the diamond particles in the single layer structure.

The foregoing method of transferring heat from a heat source by a soaking plate further includes transferring thermal energy from the metal block to an additional material.

The foregoing method of transferring heat of a heat source by a soaking plate, wherein the heat energy is further transferred to a heat sink or a heat pipe.

The aforementioned soaking plate is attached to the heat source.

The aforementioned soaking plate is brazed or soldered to the heat source.

The foregoing heat equalizing plate comprises a metal material selected from the group consisting of aluminum, ruthenium, copper, gold, silver, and alloys thereof.

The features of the present invention are described in the broader aspects of the preferred embodiments of the invention. The remaining features of the present invention will be apparent from the following description of the appended claims.

Before the present invention is disclosed and described, it is understood that the invention is not limited to the specific structures, process steps or materials disclosed hereinafter, but may be extended to the equivalents known to those skilled in the relevant art. . It is also understood that the specific terminology used herein is for the purpose of description

It must be noted that the articles "a" and "the" are used in the <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Thus, for example, "a diamond particle" contains one or more such particles, and "a material with a gap" contains One or more such materials are present, and "the particles" contain one or more of such.

definition

In describing and claiming the present invention, the following specific terms are used in accordance with the definitions set forth below.

The terms "particle" and "grit" used herein are used interchangeably, and when these terms are used in conjunction with diamond particles, they refer to the particle form of the diamond. These particles or particles may have different shapes, such as circular, elliptical, square, and self-shaped (Euhedral) and the like. In a particular aspect, the "particles" may comprise or consist essentially of a polycrystalline diamond of any shape, such as a cubic polycrystalline diamond. The term "mesh" as known in the art to which the present invention pertains refers to the number of holes per unit area, such as U.S. Meshes. Unless otherwise specified, the mesh sizes mentioned in the text refer to the size of the US standard mesh. In addition, since each particle is in a specific "mesh size" and actually varies within a small size range, the mesh size is generally understood as the average mesh size of a whole group of particles, as used herein. The term "substantially" refers to the complete or near-complete extent or extent of an action, feature, property, state, structure, article, or result. For example, an object is "substantially" covered, meaning that it is completely covered or nearly completely covered. The extent to which it is absolutely comparable to absolute completeness may depend, in some instances, on the particular context of the specification. However, in general, the results obtained when approaching complete will be as general as the results obtained when absolutely and completely complete. When "substantially" is used to describe a complete or near-complete lack of an action, feature, The manner of use, as well as the nature, state, structure, article or result, is equally applicable as described above. For example, a composition that is "substantially free of" particles may be completely devoid of particles, or nearly completely devoid of particles to the extent that it is completely devoid of particles. In other words, as long as the effect of a composite that is "substantially free of" raw materials or elements cannot be measured, the composite may actually contain these materials or elements.

The term "soaking plate" as used herein refers to a material or composite product that can transfer heat away from a heat source by diffusion or conduction. The soaking plate is different from the heat sink, which acts as a heat storage container until another mechanism transfers the heat away from the heat sink, and the soaking plate does not store a certain amount of heat, and only transfers heat from a heat source away.

The term "heat source" as used herein refers to a device or object that has a higher amount of heat or heat than expected. The heat source may comprise a device that generates heat as a by-product device; and the heat source may comprise an object connected to a heat transfer device and heated by the heat transfer device from another heat source to heat beyond The expected temperature.

The terms "chemical bond" and "chemical bond" as used herein are used interchangeably and refer to a molecular bond that exerts an attractive force between two atoms. The attraction is strong enough to create an atomic A binary entity compound at the interface.

As used herein, the term "infiltrating" refers to a state in which a material is heated to its temperature to the melting point and then flows as a liquid through the pores between the particles.

As used herein, the term "sintering" means that two or more separate particles form a continuous solid block. Sintering procedure involves fixing the particles The holes between the particles are integrated and at least partially eliminated. Sintered diamond particles generally require ultra high pressure and the addition of a carbon solvent as a sintering aid.

As used herein, the terms "Cementing" and "Cemented" refer to a non-sintered state in which the particles are physically held together by the surrounding coated material. The material can be a metallic material. The term "metal" refers to metals as well as non-metals (Metalloids). The metal may comprise compounds, alkali metals and alkaline earth metals, which are generally considered to be metals found in transition metals. Examples of metals include: silver, gold, copper, aluminum, and iron. Non-metals include, in particular, bismuth, boron, antimony, bismuth, arsenic and antimony The metal material also contains an alloy or a mixture containing a metal material. The foregoing alloys and mixtures may further comprise additives. In the present invention, the carbide forming element and the carbon wetting agent may comprise an alloy or a mixture, but are not merely metal components. Examples of carbide forming elements include ruthenium, osmium, titanium, zirconium, hafnium, vanadium, niobium, chromium, molybdenum, manganese, lanthanum, tungsten, and niobium.

The term "grade" as used herein refers to the grade of diamond particles. Higher grade watches are diamonds with less defects and inclusions. Artificial diamonds are more likely to contain inclusions than natural diamonds due to manufacturing process factors. The less the enthalpy and inclusions contained in the diamond, the better its thermal conductivity and the more useful it is for the present invention. In addition, diamonds with niobium and inclusions are more susceptible to damage under certain manufacturing conditions. Choosing a diamond with a higher rating means deliberately selecting diamond particles of better quality, the so-called quality refers to size, price and/or shape. Higher grade diamonds represent at least a better grade than the lowest available quality, and usually represent better More than one level or more. When based on the same diamond particle size, the increase in diamond particle size usually represents an increase in its price. High-grade or higher diamond granules include Diamond Innovations' MBS-960 diamonds, Element Six's SDB1100 diamonds, and Iljin Diamond's ISD1700 diamonds.

The plural elements used in the text are listed in a general list for added convenience. However, each of these lists must be individually treated as separate and distinct parts. Therefore, it should not be interpreted that one of the independent parts of the list is substantially identical to any other part of the same list simply because the complex parts of the same group in a list have no opposite characteristics.

Concentrations, amounts, particle sizes, volumes, and other numerical data can be expressed or presented in a range. It should be understood that the scope of the present invention is to be construed as being limited to the scope of the The sub-range is as if the individual values and sub-ranges are generally quoted.

For example, a range of values from "about 1 to about 5" is to be construed as not limited to the range of values that are clearly described, and should be further construed as the <RTIgt; Therefore, this numerical range includes independent values such as 2, 3, and 4, including subranges such as 1-3, 2-4, and 3-5, and 1, 2, 3, 4, and 5. This same rule applies to a range that only refers to a single value as a lower or upper limit. Moreover, this explanation applies to any range of amplitudes as well as any of the described characteristics.

The invention has a single layer structure of soaking plate energy composed of diamond particles It is sufficient to provide an economical and efficient mechanism for thermal management. Among the heat equalizing plates, the plurality of diamond particles disposed in a single layer structure having a single particle thickness is a relatively easy and practical soaking plate design, and the heat plate design is thermally managed when connected to a heat source. effectiveness. The diamond particles are fixed in the aforementioned single layer structure through a metal block, wherein the metal block co-solidifies the particles together. In these embodiments, the portion of the metal block that is outside of the single layer structure has substantially no other diamond particles. In addition, the diamond particles may be plated with a plating layer selected from the group consisting of titanium, chromium, nickel, copper, tungsten, vanadium, niobium, zirconium, molybdenum, and alloys thereof, thereby increasing diamond particles and metal blocks. The bond strength between the bodies. In addition, the diamond particles are surface-modified by one of heat treatment, plasma treatment, and chemical solvent treatment, thereby enhancing the bonding strength between the diamond particles and the metal block.

In accordance with the embodiments presented herein, the present invention provides details applicable to various soaking plates, thermal management systems, methods of making soaked plates, and methods of heat transfer of heat sources and the like. Accordingly, the discussion of a particular embodiment herein relates to and supports other related embodiments in the text.

In an embodiment of the invention, the metal block is fabricated from a single metal material. The term metal is known to include metals as well as non-metals (e.g., bismuth, boron, bismuth, antimony, arsenic, and antimony); in another embodiment, the metal block has more than one metal material. When the metal block contains more than one or more materials, these metal materials are presented in any structure, such as an alloy, a mixture, a phase separated multilayer structure, or other spatial configuration or the like. In a particular embodiment, the soaking plate comprises aluminum. In another embodiment, the metal block comprises niobium. In yet another embodiment, the metal The block may comprise aluminum as well as tantalum, such as an alloy comprising both and/or a mixture. The material to be used in the metal block should be selected according to special considerations. It is up to the application to be decided to choose a more electrically insulating metal material or to select a more conductive metal material. Considerations for selecting materials also include compatibility, price, potential heat source to be used, potential activity between the processes, and compatibility with other materials used, including any type of adhesive.

In order to increase the thermal conductivity of the soaking plate, a higher grade of diamond must be used. If the diamond contains inclusions or other types of defects, the thermal conductivity of the diamond coarse particles may not be higher than that of copper or other metal materials. Diamond particles with better quality can transfer heat more quickly than diamond particles with poor quality. Therefore, the use of higher grade diamond particles can increase the overall thermal conductivity of the soaking plate. Diamonds with a regular shape can also increase the thermal conductivity of the soaking plate. Therefore, it is desirable to make diamonds that already contain shape rules in some designs. Diamond particles can be configured to enhance heat transfer and heat transfer. To enhance heat transfer and heat transfer, one diamond particle can be directly in physical contact with another diamond particle. This direct physical contact is the diamond's contact with the diamond. In one embodiment, substantially all of the diamond particles in a layer of structure may be diamond to diamond contact. Thus, substantially all of the diamond particles in the soaking plate can be in direct physical contact with at least one other diamond particle. In yet another embodiment, substantially all of the diamonds may contact one or more diamond particles that are in contact to form a continuous diamond particle path for heat to circulate. In other words, all of the diamond particles substantially contact the body or composition of the provided diamond particles. In another embodiment, the diamond particles can be configured or laid out into a two-dimensional pattern. In an example The diamond particles may be substantially equidistant from one another. In yet another embodiment, the laid diamond particles may be diamond to diamond contact. The diamond particles can be configured to have the same or similar orientation, and the above embodiment can be further enhanced by such a configuration, and thus the thermal conductivity is improved. In this embodiment, the diamond particles can be laid to minimize the gap between the diamond particles. For example, substantially all of the diamond particles may expose a surface from the soaking plate. Alternatively, the diamond particles can have a plane in which the individual surfaces of all of the diamond particles align with the plane. When the diamond particles have the same size, each diamond particle can have its surface aligned with two planes, such as the top and bottom surfaces of the single diamond layer. In some embodiments, the single diamond layer structure may be partially exposed to the outside of the soaking plate, or may be substantially covered by a non-diamond material, such as a metal block, or may be coated with a metal The block is coated with a carbon material composition, for example, a composition of a metal block and a polycrystalline diamond. Depending on the cost of the material, the processing cost, and the soaking plate that is expected to be used, the size of the single layer structure composed of diamond particles can be limited to be smaller than the size of the heat equalizing plate to enhance the efficiency. For example, the diamond particles can be formed into a single layer structure close to a surface of the heat equalizing plate, but do not extend completely to the edge of the heat sink.

Size also affects the ability of diamond particles to transfer heat. Larger diamond particles have better performance than smaller diamond particles. Similarly, uniform size diamond particles increase the heat transfer capacity of a single layer structure composed of diamond particles. For its part, an embodiment of the invention contemplates that the size of the diamond particles is uniform. While the size of the diamond particles can be any size, in one embodiment of the invention, the diamond particles have a mesh size ranging from about 10 to about 100. In another embodiment, the mesh of the diamond particles Dimensions can range from about 20 to about 100, and can range from about 30 to about 50; in some aspects, diamond particles having a mesh size of 30/40 can be used exclusively; on the other hand, a mesh size of 40 can be used exclusively. /50 diamond particles. In a particular embodiment, coarser diamond particles may be used, such as those having a mesh size greater than 60 mesh or greater than 80 mesh.

Although the present invention contemplates that the single layer structure comprised of diamond particles can be located in the center of the metal block, in one configuration, the single layer structure comprised of diamond particles can be closer to one side of the metal block. This design allows the side of the metal block adjacent to the diamond particle layer to be placed close to the heat source. Therefore, the region closest to a heat source on the heat equalizing plate can have higher thermal conductivity than the region farther away from the heat source.

In another embodiment, the single layer structure comprised of diamond particles can be affixed to at least one side of the metal block. Therefore, the single layer structure composed of diamond particles can be commonly fixed in the heat equalizing plate through the metal block, but at least a portion can be exposed outside a surface thereof. In this embodiment, a thin layer of non-diamond material or a film may be applied over the diamond particles. The non-diamond material may have better thermal diffusivity to aid in the heat transfer of the uniform heater. Additionally, the inlaid material can be used to grasp or secure the heat spreader to a heat source. In one aspect, a thin metal layer, such as a thin metal layer having a thickness of from about 50 to 200 nanometers, can be assisted by securing the heat spreader to a heat source and isolating the heat source and diamond particles with a minimum of metal material. The hot plate is in close contact with the heat source. A molten metal layer, such as aluminum and/or tantalum, can infiltrate and consolidate a single layer structure of diamond particles that is initially held by an organic binder. The organic adhesive is then fired into carbon to form an inlaid layer of carbon. In addition, another coating is in An example of a carbon material on a diamond surface exposed surface is diamond-like carbon. Such drilled carbon can be coated onto the diamond particles to form a relatively thin layer, such as a thickness of from about 400 to 700 nanometers. The diamond-like carbon can have a relatively high thermal conductivity and thus enhance the overall thermal conductivity of the soaking plate.

In one aspect, the metal block can comprise substantially consisting of aluminum, tantalum, copper, gold, silver, and alloys or mixtures thereof. In a detailed aspect, the metal block can comprise aluminum or tantalum. In a further aspect, the metal block can consist essentially of aluminum. In another aspect, the metal block can consist essentially of tantalum. In addition, the metal block may use only an aluminum-magnesium alloy or a composite of an aluminum-magnesium alloy and other materials.

In a further aspect, when the metal block comprises or consists essentially of aluminum, a portion of the aluminum can be anodized. Anodizing can be performed on one or more surfaces of the aluminum. In one embodiment, the soaking plate that bonds a layer of diamond particles through the aluminum may have a plated surface. The anodized surface may be parallel to the single layer structure composed of diamond particles, or may be further located on a portion of the heat equalizing plate to be opposed to a heat source. In a particular embodiment, the anodized surface can be disposed between the diamond particle layer and a heat source. In a more specific embodiment, the anodized surface can be placed in direct physical contact with a heat source, and moreover, the anodized surface can be physically and/or chemically bonded to the heat source. .

The higher diamond particle density in the single layer structure enhances the ability of the soaking plate to transfer heat. When the single layer structure has a single diamond particle thickness, the filling efficiency can be greatly improved compared to other general methods of using diamond particles in the heat equalizing plate. The efficiency of the filling is partly dependent on the manufacturing of the soaking plate (eg material used, temperature, time and pressure). In an embodiment, the fill efficiency can be greater than about 50%. In another embodiment, the fill efficiency can be above about 80%, and can even be above 90%. In yet another embodiment, the fill efficiency can be greater than about 95%. In the low pressure infiltration of diamond particles (typically low pressure using infiltration), the filling efficiency can be from about 50 to about 70% or higher. Filling efficiency can be improved by selecting larger diamond particles and diamond particles with uniform size and shape.

In yet another embodiment, the use of diamond particles having a uniform contour can increase fill efficiency. In particular, although other shapes of diamond particles can be used, substantially cubic diamond particles are commercially most commonly available. The cube diamond can be filled in a single layer structure in an edge-to-edge manner. If the diamond particles are all oriented in the same direction rather than randomly in any direction, the thermal properties of the final composite can be enhanced.

One of the factors to be considered when designing the soaking plate of the present invention is the thermal properties of the interface between the diamond particles and the thermal properties of the interface between the metal material and the diamond particles. The holes between the interfaces are like hot obstacles, in other words, the contact thermal resistance. Ideally, in the entire single layer structure, the sides of the diamond particles will indeed contact the sides of the other diamond particles.

In some embodiments, the single layer structure comprised of diamond particles can be consolidated by a metal block. In some aspects, the aforementioned consolidation procedure can be achieved by infiltration with a metallic material. The appropriate infiltration temperature can be determined in accordance with the type of metal material used to infiltrate. Although infiltration can be performed at various temperatures, in one embodiment, infiltration can be carried out at temperatures below about 1000 degrees Celsius. The pressure of infiltration can also be changed. The aforementioned pressure can be a low pressure relative to system pressure. An example of this low pressure can be less than about 100 Atmospheric pressure, less than about 50 atmospheres, less than about 10 atmospheres, and less than about 5 atmospheres. In an embodiment, infiltration can be performed in a vacuum apparatus. In addition to the aforementioned infiltration procedure, a single layer structure consisting of diamond particles can be sintered by Spark Plasma Sintering (SPS), which is carried out at a temperature of less than about 1200 degrees Celsius. It can also be controlled by hot pressing to control the pressure from 100 MPa to 5.5 GPa and the temperature from 700 to 1100 degrees Celsius, which can effectively combine the diamond particles with the metal matrix.

The present invention includes apparatus, systems, and methods for transferring heat from a heat source. In one aspect, a thermal management system can include a soaking plate. The thermal management system can include a heat source that contacts the soaking plate. The heat equalizing plate can have two opposite sides. The side closest to the heat source may have a lower coefficient of thermal expansion and a higher thermal conductivity than the other side. The single consolidated diamond particle layer in the soaking plate can affect characteristics such as thermal expansion coefficient and thermal conductivity. In particular, the heat equalizing plate has a side of the diamond particle layer having a low coefficient of thermal expansion and a high thermal conductivity.

By adding a layer of Polycrystalline Diamond (PCD), the thermal properties of the diamond layer near the side of the soaking plate can be made more prominent. The polycrystalline diamond layer may be attached to the soaking plate and may be disposed between the soaking plate and the heat source. Moreover, in some embodiments, a polycrystalline diamond layer can be in direct contact with the single layer structure comprised of diamond particles. For example, in the example where the layer of diamond particles of the soaking plate is exposed to the surface of the soaking plate, a layer of polycrystalline diamond may be directly attached to the layer of diamond particles.

The soaking plates produced by the present invention can have different structures depending on the use. The above soaking plate can be polished and can be based on the demand of the applied heat source And formulate the shape. The soaking plate of the present invention can be formed into almost any size relatively quickly with respect to a soaking plate manufactured by a chemical vapor phase process. The soaking plates most commonly used in electronic applications will have a thickness of from about 0.1 mm to about 1 mm. In one aspect, the soaking plate thickness can be from about 1.1 to about 30 times the thickness of the diamond layer. The heat equalizing plate may be formed as a circular or elliptical dish or a quadrilateral, such as a square, a rectangle or a sheet of other shapes. The advantage of this design is that it is designed to have a good degree of tightness. In addition, the soaking plate of the present invention can be formed to a very large size so as to cover a large amount of area, or can be formed into a complicated shape to look at the desired application. The heat source can also be any electronic or other type of component that can generate heat (such as a central processing unit (CPU)).

Once the soaking plate is formed, the position of the soaking plate is set based on the design and heat transfer principle. The heat equalizing plate can directly contact the components in close contact, and can even form a coated heat source, or the heat equalizing plate shape can be shaped to directly contact the heat source in a large area. Alternatively, the soaking plate may be separated from the heat source by a heat pipe or other heat transfer device connection.

In addition to the soaking plates described herein, the present invention also includes a cooling unit for transferring heat away from a heat source. As shown in FIG. A, a soaking plate 12 formed according to the principles discussed herein may be disposed in thermal contact with a heat source, which may be a central processor 14 and a heat sink 16. The heat spreader transfers heat generated by the central processor to the heat sink. The materials and structures of the heat sink can be of various materials and configurations known to those of ordinary skill in the art to which the present invention pertains. For example, aluminum and copper are known heat sink materials, and as shown in FIG. A, the heat sink can include a plurality of heat sink fins 18. When the heat transfer plate is used to quickly and efficiently transfer the heat of the central processor, the heat sink can absorb Heat, and the fins help to dissipate heat into the surrounding environment. A variety of different heat sinks, heat sources, and contact structures between the soaking plates can be employed depending on the particular result to be achieved. For example, the above-mentioned elements such as the heat equalizing plate may be disposed adjacent to each other, or may be coupled or coupled to each other. In many cases, it may be beneficial to attach a soaking plate to the heat source. The foregoing additional procedures may be performed by brazing, soldering, chemical bonding, gluing, or any other chemical or mechanical attachment. The brazing method has better heat transfer efficiency than other additional materials, and thus can increase the efficiency of the heat equalizing plate.

Although the heat sink 16 has a plurality of fins as shown, it should be understood that the present invention can utilize any heat sink known to those of ordinary skill in the art to which the invention pertains. A known example of a heat sink is discussed in U.S. Patent No. 6,538,892, the disclosure of which is incorporated herein by reference. In one aspect of the invention, the heat sink includes a heat pipe having an internal working fluid. An example of a heat pipe heat sink is discussed in U.S. Patent No. 6,517,221, the disclosure of which is incorporated herein by reference.

As shown in FIG. B, in one aspect of the invention, the heat equalizing plate 12 can be at least partially embedded in the heat sink and or the heat source. In this way, not only can the heat transfer through the bottom of the heat equalizing plate to the heat sink, but also at least a portion of the heat can be transferred to the heat sink through the side of the heat equalizing plate. After being embedded in the heat sink, the heat equalizing plate can be fixed in the heat sink by a Compression Fit. In this way, no bonding material or brazing material is required to exist between the soaking plate and the heat sink, and the bonding or brazing material will block the heat transfer from the soaking plate to the heat sink as an obstacle.

Although the soaking plate can be solidified by various mechanisms in the technical field of the present invention In the heat sink, on the one hand, the soaking plate is fixed in the heat sink by a thermally induced compression method (Thermally Induced Compression Fit). In this embodiment, the heat sink can be heated to a temperature to expand an opening in the heat sink. The soaking plate can then be mounted to the expanded opening and the heat sink is then cooled. After cooling the heat sink having a relatively high coefficient of thermal expansion, the heat sink will contract around the soaking plate and induce compression to embed the heat equalizing plate in the heat sink without any intervening therebetween The combination of materials. A mechanical friction method can also be used to secure the soaking plate in the heat sink.

As shown in Figure C, in one aspect of the invention, the heat sink can include a heat pipe 22 having an internal working fluid (not shown). The internal working fluid can be any internal working fluid known to those of ordinary skill in the art to which the invention pertains, and in one aspect it is water or water vapor. The heat pipe can be substantially sealed to maintain the working fluid inside the heat pipe. The heat equalizing plate may be disposed adjacent to the heat pipe, and on the one hand the heat equalizing plate may be brazed to the heat pipe. In the embodiment of Figure C, the soaking plate extends through the outer wall of the heat pipe such that the bottom of the soaking plate directly contacts the working fluid, as shown by the brazed portion 26, thereby assisting in maintaining the sealed state of the heat pipe.

When the soaking plate is in direct contact with the working fluid, the working fluid can transfer heat away from the soaking plate more efficiently. In the embodiment as shown in Fig. c, the working fluid (water in the present embodiment, not shown) contacts the heat equalizing plate, and when the heat from the soaking plate is absorbed, the working fluid evaporates. . The water vapor then condenses at the bottom of the heat pipe to form a liquid, after which, due to the capillary phenomenon, the liquid is recirculated 24 at the outer wall of the heat pipe that connects the heat equalizing plates, and then the working fluid is again evaporated and repeatedly circulated. Since the outer wall of the heat pipe is made of a material having a high heat transfer coefficient, the heat can be made outside the heat pipe The wall escapes into the surrounding air.

Due to previous use, size, materials, cost, and other considerations, it is possible to provide beneficial diamond-like carbon on the metal block. The diamond-like carbon type may be a single layer structure and physically or/or chemically attached to one or more sides or surfaces of the metal block. Compared to the surface of the metal block, the diamond-like carbon can more efficiently dissipate heat from the soaking plate into the air. Therefore, the use of at least one type of drilled carbon layer can be particularly beneficial for structures that lack heat sinks. In one embodiment, the single layer structure consisting of diamond particles can be located on the metal block closer to the heat source, and a type of drilled carbon layer can be located on the metal block relative to the heat source. In this configuration, thermal energy can flow from the heat source through the diamond particles (possibly through a specific amount of metal block before passing through the diamond particles), through a portion of the metal block, and then escape from the diamond-like carbon layer into the surrounding area. In the environment, for example, escape into the air. While the use of diamond-like carbon may provide more benefits to structures that do not have a heat sink, the diamond-like carbon layer can still be used in embodiments with heat sinks. The diamond-like carbon layer may also be disposed on the metal block and between the heat source and the single layer structure composed of diamond particles.

In accordance with the present invention, a method of making a soaked plate can include configuring a plurality of diamond particles into a single layer structure having a thickness of a single diamond particle. This single layer structure has a thickness of one diamond particle. In the single layer structure, when the diamond particles are arranged in a stacked manner above, even when two smaller diamond particles are stacked on each other and the overall stack height is equal to the height of a single layer structure composed of larger diamond particles, The single layer structure of stacked diamond particles is still considered a single layer rather than a multiple layer. The single layer structure is covered by a metal block. In addition to the diamond particles in a single layer structure, the metal block can It does not contain diamond particles in general.

The second figure shows an embodiment of the invention in which the heat equalizing plate 30 contacts the heat source 36. The heat source 36 shown in the figures has a flat surface that is relatively easily in thermal contact with a substantially flat soaking plate. As shown, the heat equalizing plate 30 comprises a single layer structure comprised of diamond particles 32. The single layer structure consisting of diamond particles is covered by a metal block 34 which acts to consolidate the diamond particles.

Referring to the seventh figure, in order to increase the filling efficiency of the diamond particles 32d, the diamond particles 32d may be cubic cube-shaped diamonds, as shown in the seventh figure.

Similarly, a method of transferring heat away from a heat source can include: drawing thermal energy from a heat source into a heat equalizing plate, wherein the heat source and the heat equalizing plate are in thermal contact with each other. In more detail, thermal energy can be drawn into the diamond layer of a soaking plate and then conducted into a metal block. In addition, the heat sink can be attached to a heat sink or heat pipe. This additional procedure allows thermal energy to be transferred from the soaking plate (e.g., a portion of the metal block) to the heat sink or heat pipe.

Filling techniques can be used to improve the packing efficiency and the heat transfer characteristics of a single layer structure composed of diamond particles. This technique may generally include mechanical configuration and/or agitation (eg, vibration). As shown in the following example, a layer of diamond particles can be formed by adhering a layer of diamond particles through an adhesive layer or an adhesive layer or film, thereby forming a single layer structure composed of diamond particles. The viscous layer can then be removed from the block to complete a single layer structure consisting of diamond particles.

The single layer structure composed of diamond particles is covered by a metal block. This coating procedure can include setting an Interstitial Material Between at least a portion of the diamond particles. The interstitial material can be introduced into other processes, infiltrated into a layer structure composed of diamond particles, and then electrodeposited. Interstitial materials (e.g., silver, copper, and nickel) can be introduced into the diamond particle layer in an aqueous solution by an electrodeposition process. In this procedure, there is generally no chemical bond between the deposited metal and the diamond. The metals provided above are typically placed in an acidic solution and may be used by those of ordinary skill in the art to which the invention pertains. Many elements can also be added to reduce the surface tension of the solution or to increase the permeability of the solution to the pores.

With regard to infiltration, it should be considered how the process would improperly affect the diamond particles. The configuration of the present invention makes the diamond more robust than other homogeneous plates. Due to the configuration of the single layer structure, it takes only a small time to infiltrate the diamond particles in the process conditions, thereby reducing the time during which the diamond particles are exposed to potentially harmful conditions. In addition, the use of higher quality diamond particles as a whole means that the diamond particles are less likely to be damaged by this aggressive process, and therefore less adverse phase transformation. Another consideration is that the interstitial material must be carefully selected to avoid infiltration temperatures or excessive sintering temperatures that can damage the diamond. Thus, in one aspect of the invention, the interstitial material can be an alloy that can be melted or sintered below about 1100 degrees Celsius. When above this temperature, this process time should be shortened to avoid excessive damage to the diamond particles. Metal inclusions in the diamond particles can cause cracks in the interior of the diamond particles, causing damage to the diamond particles. Most of the synthetic diamonds contain a metal catalyst (such as iron, cobalt, nickel or alloys thereof) as inclusions. These metal inclusions have a high coefficient of thermal expansion and allow the diamond particles to reverse phase back to graphite carbon. Therefore, at high temperatures, diamonds may crack due to different rates of thermal expansion of the metal inclusions, or may be reversed from carbon to carbon. However, it can be drilled under high pressure Diamonds are infiltrated in the stable region of the stone to substantially eliminate the problem of reverse phase transformation, for example at high pressures greater than about 5 billion Pascals (5 GPa).

In order to minimize the degradation of the quality of the diamond, it is preferred to infiltrate at a temperature below 1100 degrees Celsius or in a stable region of the diamond under high pressure. Certain alloys of iron, nickel, and cobalt described above, as well as most alloys of copper, aluminum, and silver, are capable of melting within this range. During the infiltration of a gap filler material, the hot metal inevitably causes a small drop in the quality of the diamond. However, the problem of quality degradation can be minimized by reducing the time of infiltration and carefully selecting the interstitial material.

Although the diamond may be damaged or reversely transformed back to carbon under high temperature and high pressure conditions, in one embodiment, infiltration may be performed at a temperature of less than about 1000 degrees Celsius. Similarly, infiltration can be carried out under vacuum or reducing conditions. Oxidation of the molten metal material can also be avoided by using a vacuum atmosphere or a reducing atmosphere such as hydrogen. Oxidation also reduces the thermal conductivity of a metallic material, and thus oxidation is unfavorable for the soaking plate. In one aspect, the single layer structure comprised of diamond particles can be formed on a metal substrate or film, and then a metal material can be infused into the diamond particles. This infiltration can be combined with the metal substrate or film to form a solid soaking plate. The metal substrate and the metal infiltrated material may be the same or different materials. The foregoing example is shown in the third figure. Two separate layers of metal material 38, 40 enclose the single layer structure comprised of diamond particles 32a. The heat equalizing plate 30a is in thermal contact with a heat source 36a. Specifically, the metal material layer 40 and the heat source 36a are in contact with each other. As in the embodiment illustrated in the third figure, the diamond particles are substantially covered by one of the metallic materials. Alternatively, the diamond particles may be coated with more than one metal material. In addition, the third figure shows the different feet as described above. Inch diamond particles. The single layer structure has a thickness of one diamond particle which is different from a diamond composite layer in which a plurality of diamond particles are stacked to the entire thickness.

The fourth figure shows a soaking plate 30b having a shortened diamond particle layer 32b. The diamond particle layer 32b does not extend completely to the length of the entire soaking plate. On the contrary, it is limited in size to approximate the size of the heat source 36b. The aforementioned structure is very economical because the cost of diamond particles in the soaking plate is becoming more and more expensive. This embodiment includes a metallic material 42 that extends the soaking plate into a block shape. The metal material 42 may be the same as the metal material 34b covering the diamond particle layer, or may be completely different.

In one aspect, a soaking plate can be fabricated that includes a single layer structure of diamond particles, wherein the single layer structure of diamond particles is along a surface of the soaking plate. The diamond particles can be consolidated and the soaking plate comprises a metallic material, thus creating a difference in thermal conductivity of the soaking plate from one side (diamond particle layer) to the other opposite side (metal material). A heat source can be contacted at the surface of the diamond or at the exposed surface of the tip. Further, a polycrystalline diamond layer may be attached to the single layer structure composed of diamond particles.

The foregoing has presented the soaking plate, the thermal management system, the soaking plate manufacturing method, and the method of using the soaking plate of the present invention. Conventional use of diamond-like soaking plates is more expensive and less efficient than the present invention. Diamond film or diamond layers made by chemical vapor deposition are time consuming and costly. Alternatively, some diamond-containing soaking plates use diamond particles. However, these diamond particles are presented in the form of a composite in which a large amount of diamond particles are distributed. The foregoing design increases the thermal conductivity with increased volumetric capacity. Of course, when using a large number of diamonds, lower grade diamonds are used to lower Overall cost. Moreover, in one embodiment, the diamond particle layer is strategically utilized where it is most needed, i.e., at the hottest spot on the heat source. The use of a limited amount of strategically placed higher quality diamonds can ultimately greatly reduce the cost of the soaking plates and allow the soaking plates to have the same or higher thermal transfer capabilities.

Furthermore, the soaking plates mentioned herein can have higher filling efficiencies and are easier to manufacture than previous designs. Intuitively, it is easier to fill the diamond particles in a single layer structure than to arrange the diamond particles in three dimensions. It is extremely difficult to fill the diamond particles to two-thirds of the three-dimensional volume. Conversely, the single-layer structure design can be filled with different particle methods or even with different particle directions, thereby increasing the thermal conductivity of the soaking plate. The consolidation and processing of the single diamond layer requires less infiltration time and can perform efficient infiltration at low temperatures and/or low pressures, so that it is less in process than conventional diamond composite heat spreaders. Damaged diamond particles. Since the diamond particles are not damaged or damaged during the process, the thermal conductivity of the diamond particles is not lowered, and it is common for the conventional process to reduce the thermal conductivity of the diamond particles.

Another advantage of this design is that it provides better thermal connectivity between the soaking plate and the heat source. In the embodiment in which the diamond layer is closer to the heat source, the coefficient of thermal expansion of the soaking plate is specifically designed to be suitable for connecting the heat source and the heat sink. The coefficient of thermal expansion is lower on the side with the diamond, that is, the coefficient of thermal expansion is lower on the side closer to the heat source, and conversely, the coefficient of thermal expansion is higher near the heat sink or the heat pipe. This is an ideal structure for long-term connections. When the coefficient of thermal expansion does not match, the repeated expansion and contraction due to the change in heat may cause the joint to rupture and be destroyed. Any rupture between the heat source and the soaking plate or It is the hole that will greatly reduce the efficiency of the system. The same principle applies to the side where the soaking plate is connected to a heat sink or heat pipe. A typical diamond composite has a uniform or at least similar coefficient of thermal expansion at its two junctions. The soaking plates presented herein efficiently bridge the gradient of the coefficient of thermal expansion and provide a durable and durable joint structure.

The following examples illustrate various different soaking plate manufacturing methods of the present invention. These examples are for illustrative purposes only and are not intended to limit the invention.

example Example 1 Method of manufacturing uniform hot plate

Thoroughly clean the diamond particles passing through the 30/40 US mesh size (Element Six SDB1100) by ultrasonic vibration in acetone. A 100 micron thick reduced copper film was placed on a steel tray. A 25 micron thick double-sided adhesive layer was attached to the copper film. The diamond particles are spread on the top surface of the adhesive layer, and the diamond particles are disturbed by ultrasonic vibration to increase the filling efficiency. The tray is flipped to remove diamond particles that are not adhered to the adhesive layer. Once the loose diamond particles are removed, the tray is flipped again to its original state. Place a 2 mm thick pure aluminum plate on top of the diamond particles. The foregoing configuration is as shown in FIG. 5A, in which the copper layer having the adhesive layer 46 includes a single layer structure composed of diamond particles 48 covered by an aluminum plate 50. The tray was placed in a vacuum furnace and heated to 680 degrees Celsius. The aluminum material penetrates into the gap between the diamond particles. The tray is cooled. After cooling, the aluminum solidifies the diamond particles and firmly bonds the copper film. The finished product of the soaking plate is as shown in Figure 5B, which is similar to the third figure.

Example 2 Manufacturing method of complex number average heat plate

This example continues with the process of Example 1, except before the introduction of diamond particles. Put multiple copper pieces on the adhesive layer first. The adjustable copper configuration results in an exposed layer of 20 square millimeters exposed.

Once the tray is cooled, the top surface of the aluminum is ground to a smooth shape, and the sheet is wire-cut along the center line of the copper sheet for separation (Wire Electrical Discharge Machining, Wire-EDM). A plurality of soaking plates of about 40 mm are formed through the foregoing cutting. Each piece of hot plate contains about 1600 crystals (about 4 carats, cost 80 US dollars), and each crystal is flat and firmly embedded in the copper film. The sixth figure shows an exemplary panel 52 having a plurality of heat equalizing plates 56 that have not been cut. A copper sheet 54 (covered by aluminum) separates each of the heat equalizing plates 56, each of which has a single diamond layer.

The heat spreader can be soldered directly to a computer chip and/or soldered to a heat sink or a heat pipe. The diamond layer has a thermal conductivity of approximately 1000 watts/meter. Degree (W/mK), which is more than 2.5 times higher than the thermal conductivity of copper. Such high thermal conductivity effectively removes hot spots on the computer chip. This heat is transferred from the other side of the diamond particles to the aluminum block and further to the connected heat sink or heat pipe.

Example 3 Helium-containing soaking plate

This example procedure is almost as described in Example 1, except that molten tantalum is placed in the aluminum and infiltrated at 1450 degrees Celsius. Its final product is an electrical insulator relative to conductive copper. Further, the thermal expansion coefficient of the composite is smaller than that of the first example.

If excessive diffusion occurs between the infiltrated material and the copper film, the thermal conductivity is lowered. In addition, the copper film is thus dissolved. In this example, a layer of more refractory metal can be coated on the copper film to become a chemical Learn about obstacles. For example, a layer of tungsten can be sputtered onto the copper film. The thermal conductivity of tungsten is not low and is very thin (for example, several nanometers thick), so its thermal resistance can be ignored.

Example 4 Helium-containing soaking plate

The diamond particles passing through the 30/40 US mesh size (Element Six SDB1100) are vibrated into a neat single layer structure on a aluminum plate with a frame. A wafer (Wafer) is placed on the top surface of the filled diamond layer. The tray was placed in a vacuum oven and heated to 1450 degrees Celsius for 20 minutes. The crucible melts and fills the pores between the diamond particles. The aluminum plate is cooled. The surface of the cooled aluminum plate is ground to flatten it so that it can be more easily attached to a heat source.

Example 5 A heat spreader plate containing bismuth aluminum alloy

This example step is roughly as described in Example 4 except that the wafer is replaced by a tantalum aluminum alloy. In addition, the infiltration is carried out at 1000 degrees Celsius.

It should be understood that the foregoing is merely illustrative of the application of the principles of the invention. Many modifications and different configurations are possible in the art to which the invention pertains without departing from the scope and spirit of the invention, and the scope of the appended claims is intended to cover such modifications. Therefore, when the details of the present invention which are presently regarded as the most practical and preferred embodiments have been disclosed as above, those having ordinary skill in the art to which the present invention pertains may be based on the concepts and principles set forth herein. Modifications are made without limitation to a variety of dimensions, materials, shapes, shapes, functions, methods of operation, assembly, and use.

12‧‧‧Homothermal board

14‧‧‧Central processor

16‧‧‧ Heat sink

18‧‧‧ Heat sink fins

22‧‧‧ Heat pipe

26‧‧‧ Hard soldering

30, 30a, 30b‧‧‧ hot plate

32,32a,32b,32d‧‧‧ diamond particles

34, 34b‧‧‧ metal block

36, 36a, 36b‧‧‧ heat source

40‧‧‧Metal material layer

42‧‧‧Metal materials

46‧‧‧Adhesive layer

48‧‧‧ Diamond particles

50‧‧‧Aluminum plate

Figure 1A is a schematic view of an embodiment of a soaking plate of the present invention, wherein The soaking plate is thermally connected to a heat source and a heat sink.

Figure 1B is a schematic view of another embodiment of a soaking plate of the present invention, wherein the soaking plate is thermally coupled to a heat source and a heat sink.

The first C is a schematic view of another embodiment of the soaking plate of the present invention, wherein the soaking plate is thermally coupled to a heat source and a heat sink.

The second figure is a side cross-sectional view of another embodiment of a soaking plate of the present invention, wherein the soaking plate is adjacent to a heat source.

The third figure is a side cross-sectional view of another embodiment of a soaking plate of the present invention, wherein the soaking plate comprises two different metallic materials and is adjacent to a heat source.

Figure 4 is a side cross-sectional view of another embodiment of a soaking plate of the present invention, wherein the soaking plate comprises a single layer of diamond having a particular width.

Figure 5A is a side cross-sectional view of an exemplary initial step of the method of manufacturing a soaked plate of the present invention, corresponding to Example 1.

Figure 5B is a side cross-sectional view of an exemplary soaking plate product of the method for producing a soaked plate of the present invention, which corresponds to Example 1.

The sixth drawing is a top perspective view of an exemplary initial step of the method for manufacturing a soaked plate of the present invention, which corresponds to Example 2.

Figure 7 is a side cross-sectional view of another embodiment of a soaking plate of the present invention, wherein the soaking plate is adjacent to a heat source, wherein the diamond particles are cube-shaped square diamonds.

It is to be understood that the above drawings are for illustrative purposes only and are intended to provide further understanding of the invention. Moreover, the above figures are not drawn in terms of actual dimensions, and thus their size, particle size, and other aspects are often exaggerated to clearly illustrate the invention. Accordingly, the heat spreader of the present invention can be fabricated with respect to the dimensions and other aspects shown in the above figures.

30‧‧‧Homothermal board

32‧‧‧ diamond particles

34‧‧‧Metal blocks

36‧‧‧heat source

Claims (35)

A heat equalizing plate having a single layer of diamond particles, comprising: a metal block coated with a plurality of diamond particles, the plurality of diamond particles being configured as a single layer structure having a thickness of a single particle, the metal block Consolidated with the diamond particles and having substantially no other diamond particles therein; wherein the single layer structure composed of diamond particles is sintered by spark plasma sintering, the sintering process being less than about 1200 degrees Celsius The temperature is carried out. A soaking plate having a single layer of diamond particles as described in claim 1 wherein the metal block is a single metal material. A soaking plate having a single layer of diamond particles as described in claim 1, wherein the metal block comprises more than one metal material. A soaking plate having a single layer of diamond particles as described in claim 3, wherein the metal block comprises a plurality of layers of different metal materials. A soaking plate having a single layer of diamond particles as described in claim 1 wherein the metal block comprises a metal alloy. A soaking plate having a single layer of diamond particles as described in claim 1, wherein the metal block comprises a component selected from the group consisting of aluminum, bismuth, copper, gold, silver, and alloys thereof. A soaking plate having a single layer of diamond particles as described in claim 6 wherein the metal block comprises aluminum. A soaking plate having a single layer of diamond particles as described in claim 7 wherein the metal block comprises an aluminum-magnesium alloy. If there is a single layer of diamond particles as described in item 7 of the patent application scope A hot plate wherein at least a portion of the aluminum is anodized. A soaking plate having a single layer of diamond particles as described in claim 6 wherein the metal block comprises niobium. A soaking plate having a single layer of diamond particles as described in claim 6 wherein the metal block consists essentially of aluminum or tantalum. A soaking plate having a single layer of diamond particles as described in claim 6 wherein the metal block comprises a mixture or alloy of aluminum and ruthenium. A soaking plate having a single layer of diamond particles as described in claim 1 wherein the diamond particles are high grade diamond particles. A soaking plate having a single layer of diamond particles as described in claim 1 wherein the diamond particles are substantially uniform in size or shape. A soaking plate having a single layer of diamond particles as described in claim 14 wherein the diamond particles are cube-shaped cubic diamonds. A soaking plate having a single layer of diamond particles as described in claim 1 wherein the diamond particles are surface modified by one of a heat treatment, a plasma treatment, and a chemical solvent treatment. A soaking plate having a single layer of diamond particles as described in claim 1 wherein the diamond particles have a mesh size of from about 20 to about 100. A soaking plate having a single layer of diamond particles as described in claim 17 wherein the diamond particles have a mesh size of from about 30 to about 50. A soaking plate having a single layer of diamond particles as described in claim 1, wherein the single layer structure consisting of diamond particles is closer to one side of the metal block and further away from the other opposite side of the metal block. A soaking plate having a single layer of diamond particles as described in claim 1 wherein the filling efficiency of the single layer structure consisting of diamond particles is greater than about 50%. A soaking plate having a single layer of diamond particles as described in claim 21, wherein the filling efficiency of the single layer structure composed of diamond particles is about more than 80%. A soaking plate having a single layer of diamond particles as described in claim 1 wherein the thickness of the soaking plate is about 1.1 to 30 times the thickness of a single diamond particle. The heat equalizing plate according to claim 1, wherein the single layer structure composed of diamond particles is infiltrated with a metal material. A soaking plate having a single layer of diamond particles as described in claim 24, wherein the infiltration procedure is carried out at a temperature of less than about 1000 degrees Celsius. A soaking plate having a single layer of diamond particles as described in claim 24, wherein the infiltration procedure is carried out under vacuum. A soaking plate having a single layer of diamond particles as described in claim 26, wherein the infiltration procedure is carried out at a pressure below 100 atmospheres. A soaking plate having a single layer of diamond particles as described in claim 1 further comprising a polycrystalline diamond layer attached to a surface of the soaking plate. A soaking plate having a single layer of diamond particles as described in claim 1, wherein the diamond particles are subjected to a hot pressing process, the pressure of the hot pressing process is from 100 MPa to 5.5 GPa, and the temperature is from 700 Å to 700 Å. 1000 degrees. A soaking plate having a single layer of diamond particles according to claim 1, wherein the diamond particles are plated with a plating layer selected from the group consisting of titanium, chromium, nickel, copper, tungsten, vanadium, niobium, zirconium, One of molybdenum and its alloys. A method for transferring heat of a heat source by a heat equalizing plate, comprising: drawing heat energy from a heat source into a diamond layer of a heat equalizing plate, wherein the heat equalizing plate is in thermal contact with the heat source, and the diamond layer is a single layer structure having a single diamond particle thickness and further transferring heat through the diamond layer and transporting it into a metal block that is substantially coated and consolidated with the diamond particles, and the metal block In addition to the diamond particles in the diamond layer, substantially no other diamond particles are included; wherein the single layer structure consisting of diamond particles is sintered by spark plasma sintering, the sintering process is at a temperature below about 1200 degrees Celsius. Go on. A method of transferring heat from a heat source by a soaking plate as described in claim 31, further comprising transferring thermal energy from the metal block to an additional material. The method of transferring heat of a heat source by a soaking plate as described in claim 32, wherein the heat energy is further transferred to a heat sink or a heat pipe. A method of transferring heat from a heat source by a soaking plate as described in claim 31, wherein the soaking plate is attached to the heat source. A method of transferring heat from a heat source by a soaking plate as described in claim 34, wherein the soaking plate is brazed or welded to the heat source. Transfer of heat source by soaking plate as described in item 31 of the patent application scope A method of heating, wherein the heat equalizing plate comprises a metal material selected from the group consisting of aluminum, ruthenium, copper, gold, silver, and alloys thereof.