TW201122401A - Heat spreader with single layer of diamond particles and diamond particle and method associated therewith. - Google Patents

Abstract

A heat spreader with single layer of diamond particles provides an efficient management of heat in a cost effective way. The heat spreader includes a number of diamond particles. The diamond particles are arranged into a single layer structure and covered by a metal block. The metal block and the diamond particles are bonded together. The layer of diamond particles has a thickness of single diamond particle. Other than the diamond particles in the single layer structure, the interior of metal block is substantially free of other diamond particles. A heat management system includes a heat source and a heat spreader. The present invention also provides a method for manufacturing such a heat spreader and a method of use thereof.

Description

201122401 VI. Description of the Invention: [Technical Field] The present invention relates to a carbon-containing composite device and a method of dissipating heat by transmitting and absorbing heat from a heat source. Accordingly, the present invention relates to the fields of chemistry, semiconductor technology, and materials science. [Prior Art] The development of the semiconductor industry follows the trend of Moore's Law proposed by Intel co-founder Gordon M〇0re in 1965. This trend indicates that the integrated circuit (lc) or a general semiconductor chip doubles in its eighteen months. Along with this progress, various design challenges have arisen. One of the often overlooked challenges is Le; , s & Often, this heat dissipation design is ignored or the design is added until the component is produced. The more entropy (Entr〇Py) is obtained according to the second law of thermodynamics 'in a closed system'. As the power of the central processing unit (CPU) increases, it produces more heat by generating a stream of electrons. Therefore, to avoid short circuits or burns, the heat generated by the increase in entropy must be removed. Some orders

The processor's existing technology has a power of about A. More than 70 watts of horses. For example, a central processing unit manufactured by 〇 J 3 micron technology can consume more than 100 watts of power. The heat dissipation method of j, such as the use of metal fins, such as metal such as metal or steel, and water evaporation pipes, will not be able to dissipate heat. The next generation of processors is fully equipped with 'ceramic soaking plates' (such as Niobium) and metal composite soaking plates (such as tantalum carbide/aluminum) that have been used to cope with increasing heat. However, 3 201122401 The thermal conductivity of these materials is not greater than the thermal conductivity of copper, which is expected to have limited heat dissipation for semiconductors. A typical semiconductor wafer contains closely packed metal conductors (such as aluminum copper) and ceramic insulators (such as oxygen, atmosphere). The thermal expansion rate of metal is 5_1〇 times the thermal expansion rate of a melon ceramic. When the wafer is heated above the Celsius rib, the difference in thermal expansion between the metal and the ceramic causes micro cracks. The repeated temperature rise and fall cycles cause damage to the wafer to deteriorate. As a result, the performance of semiconductors will decrease. Further, when the wafer temperature exceeds 9 G Celsius or more, the semiconductor portion in the wafer becomes a conductor, thereby causing the function of the wafer to fail. In addition, the circuit may be damaged and the semiconductor can no longer be used (eg, converted to "burnout"). Therefore, in order to maintain the performance of the semiconductor, its temperature must be kept below a critical value (for example, 9 degrees Celsius). The traditional method of heat dissipation is to have a metal heat sink (Heat Sjnk) in contact with the semiconductor. The general heat sink is made of aluminum fins (Fins). A fan is attached to the plurality of fins. The heat generated by the wafer will flow to the 1 radio pedestal and will be transferred to the heat sinking chip, which will then carry away the heat scatter (4) through the circulating air convection. The heat sink is therefore often designed to have a high heat capacity as a hot reservoir to remove heat from the heat source. Alternatively, a heat pipe may be used to connect between the heat sink and a radiator. The cooler is separated from the heat sink. The heat pipe is a vacuum tube sealed with water vapor. The moisture in the heat pipe evaporates at the heat sink and solidifies at the cooler. The solidified water is returned to the heat sink through the capillary phenomenon generated by the porous medium (for example, copper powder) in the heat pipe. Therefore, it is possible to remove heat by evaporating the moisture band <a semiconductor wafer, and to remove heat through the solidified moisture at the cooler. 201122401 Although heat pipes and hot plates can remove heat's complex vacuum chambers and precision capillary systems prevent this heat pipe heat sink from shrinking in size to directly dissipate heat from a semiconductor component. As a result, the heat pipe heat dissipation method is generally limited to heat conduction to a larger heat source, such as a heat sink. Therefore, how to remove heat from an electronic component through heat conduction is an issue that is still being studied in the industry today. Another option that has been found to be expected as a soaking plate is the material rich in diamonds. Diamonds take heat more quickly than any other material. The thermal conductivity of a diamond at room temperature (approximately 2000 watts/meter. absolute temperature (W/mK)) is five times higher than the thermal conductivity of copper (approximately 4 〇〇 w/mK) and is the thermal conductivity of aluminum (approximately Eight times higher than 250W/mK), copper and aluminum are the most commonly used metal thermal conductors with high thermal conductivity. In addition, the thermal DiffUsivity of diamonds (12_7 cm2/s (factory/call) is 11 times the copper thermal diffusivity (1 17 or copper thermal diffusion 埶 (〇_971 ―). The diamond quickly took away The ability to heat without storing... makes diamonds an ideal soaking plate. Compared to heat sinks, the rails can quickly transfer heat away from the heat without storing heat. Table 1 shows the difference between dry and different materials. The thermal properties of diamonds (in absolute temperature _ μ ~ heat conduction 1 ~ ~ (W / mK) specific heat (J / cm 3 K \ a _ copper 401 __ 3.44 2.44 _______ aluminum 237 ~ -__^ 138 ~ 2.57 - gold 317 2.49 - ___Silver 429 95 Tungsten - 2.47 2.95 Thermal expansion rate

(PPm/K 16.4 24.5 — 47.5 ~~Ϊ4.5 — 18.7 ~~577 201122401 矽148 Diamond (丨丨a grade} ~~^300— 2.6 T78 1.4 In addition, the coefficient of thermal expansion of diamonds is all „x, poor Keke The lowest of the diamonds. The low thermal expansion of the diamond makes it easier for the diamond to combine. Because of this characteristic, it can be: stone, low thermal expansion material (4) to minimize the pressure of the interface between the diamond and the semiconductor. Second, diamond soaking plates are used to heat the high-power laser diodes, for example, used in laser diodes to enhance the light energy in the fiber. However, 'large-area diamonds are not expensive. * Mussels, therefore, in the past, it was not commercially used to use diamonds to disperse the central processing unit. The j...there was the diamond that allowed the diamond to be polished as a uniform board to make it close to the surface. In addition, the semiconductor crystal can be metallized (for example, through Qin/Silver/Silver) for diamonds to be brazed to a conventional metal heat sink. Many diamond soaking plates are currently chemical vapor deposition (Chemical Vapor). Depos Mountain on, CVD) Made of stone film. For example, the raw material of the vapor deposited diamond film is more than 1 US square. The price of the polished and metallized diamond film is twice the price. The high price condition makes the diamond soaking plate unusable, except for some applications that require only a small area of heat dissipation or no other better rails (such as high power laser diodes). In addition to expensive ': Chemical vapor deposited diamond films can only grow at very slow rates (e.g., a few microns per hour); therefore, these diamond films rarely exceed a thickness of one millimeter (typically about 〇3 to 〇5 mm). If the wafer has a large political area (such as a central processing unit), it should be thicker (for example, 3 mm). & 201122401 In addition to the diamond products manufactured by chemical vapor deposition, one has tried to use a whole piece. Particulate diamond or "polycrystalline diamond (polycrysta丨丨丨·ηβ)

Diamond) to form a soaking plate. Examples of such devices are disclosed in U.S. Patent No. 6,390,181 and U.S. Patent Application Serial No. 2/23,233, the entire disclosure of each of which is incorporated herein by reference. In general, diamond particles are sintered by using cobalt as a sintering additive under high pressure and high temperature (HPHT) conditions to form a pCD product (or a bismuth product). Alternatively, the ruthenium or ruthenium alloy may be used to consolidate the diamond particles together as disclosed in U.S. Patent Nos. 4,124,401 and 4,534,773. The size of the diamond particles used in the general sintering procedure is in the size range of micrometers. Therefore, PCD compacts generally have a large number of particle boundaries, and each particle is coated with a second phase material of low thermal conductivity. Since the physical specific heat of such a PCD compact is limited in transmission or heat conduction, it is ineffective as a heat equalizing plate. Therefore, it is still continuously researching and developing cost-effective systems and devices that can effectively conduct heat dissipation from a heat source. SUMMARY OF THE INVENTION Accordingly, the present invention provides a soaking plate that can be used to remove heat from a heat source in a manner that draws or conducts heat. In one aspect, a soaking plate comprises a plurality of diamond particles configured to have a single layer structure and to coat the single layer structure with a metal block. The thickness of the diamond particle single layer structure can be the thickness of a single particle. The metal block effectively bonds the diamond particles, and the metal block may contain substantially no non-diamond particles in addition to the diamond particles in the single layer structure. In another variation of the soaking plate, a diamond particle monolayer structure can have a single layer thickness&apos; and wherein each diamond particle is in direct contact with another diamond particle (5) 7 201122401. Cooperating on at least one side of the heat equalizing plate to form a metal block, the diamond metal particles can be a single metal material, and the metal block body comprises more than one box of > more than one metal material The body contains multiple layers of different metallic materials. The aforementioned metal block contains a metal alloy. Gold The aforementioned metal block contains a component selected from the group consisting of sulphur, silver, and alloys thereof. , broken, copper The aforementioned metal block contains aluminum. The metal block contains a seal alloy. At least a portion of the foregoing aluminum is anodized. The aforementioned metal block contains ruthenium. The aforementioned metal dragon basically consists of 35 or cut. The metal block comprises a mixture or alloy of bismuth and bismuth. The diamond particles are high-grade diamond particles. The aforementioned diamond particles are substantially uniform in size or shape. The diamond particles are cube-shaped cubic diamonds. The foregoing single layer structure composed of diamond particles is sintered by spark plasma sintering to perform the sintering process at a temperature of less than about 1200 degrees Celsius. The diamond particles are surface modified by one of a heat treatment, a plasma treatment, and a chemical solvent treatment. The aforementioned diamond particles have a mesh size of from about 20 to about 1 Torr. The aforementioned diamond particles have a mesh size of from about 3 Å to about 50 Å. 8 201122401 The aforementioned single layer structure consisting of diamond particles is closer to one side of the metal block and further away from the other opposite side of the metal block. The aforementioned filling efficiency of a single layer structure composed of diamond particles is about 50%. The aforementioned filling efficiency of a single layer structure composed of diamond particles is about 80%. The thickness of the aforementioned soaking plate is about U to 30 times the thickness of a single diamond particle. The aforementioned single layer structure composed of diamond particles is infiltrated with a metal material. The aforementioned infiltration procedure is carried out at temperatures below about the Celsius. The aforementioned infiltration procedure is carried out under vacuum conditions. = The infiltration procedure is carried out at a pressure below 1QQa. The foregoing soaking plate having a single layer of diamond particles further comprises a polycrystalline diamond layer attached to a surface of the soaking plate. The aforementioned diamond particles are subjected to a hot pressing procedure, and the hot pressing procedure has a dust force of from (10) MPa to 5.5 GPa and a temperature of from 7 Torr to 1 Torr. The above-mentioned diamond particle electric ore has an electric ore layer selected from the group consisting of Qin, Lu, steel, tungsten, vanadium, niobium, tantalum, pin and alloys thereof. The present invention provides a method for transferring heat of a heat source by a heat equalizing plate, comprising: the foregoing embodiment of adsorbing heat energy of a heat source to a diamond layer of a heat equalizing plate, the heat equalizing plate may comprise a The diamond particle single layer junction is a single-particle thickness. The heat of the heat source can be conducted to a large block of metal that has been bonded to the diamond particles. Furthermore, in addition to the diamond particles in the structure, the metal block may contain substantially no diamond particles in 201122401. It further comprises a method of transferring heat from the metal block to an additional material in which the heat of the heat transfer from the heat transfer plate is further transferred from the metal block to the heat transfer method to transfer the heat source to the heat sink or It is a heat pipe. The aforementioned soaking plate is attached to the heat source. The soaking plate is brazed or welded to the source: The hot plate comprises a metal material selected from the group consisting of copper, gold, silver and alloys thereof. The features of the present invention are described in the broader aspects of the invention, and are described herein. The remaining features of the present invention will become apparent from the Detailed Description of the Invention and the <RTIgt; [Embodiment] Before the present invention is disclosed and described, it is understood that the invention is not limited to the specific structures, process steps or materials disclosed hereinafter, but may be extended to those skilled in the relevant art. Understand the equivalent. It should also be understood that the specific terminology used herein is for the purpose of the particular embodiments It must be noted that the articles "a" and "the" are used in the plural unless the context clearly indicates other meanings, descriptions, and additional patent applications. Therefore, for example, 纟 '"a diamond granule" 匕3 has a solid or more such particles, "a material with a gap" contains one or more extended materials, and "the granule" contains - More of this. 201122401 Definitions When describing the invention, the following specific terms are used according to the following: j疋 I use the words "Part 丨cle" and "Coarse grain" in the text. Alternate use, vy;" The temple uses a combination of diamonds and diamond particles, the particle shape of the diamond. This can be different from the shape of the particles, such as round, oval, square Wanxin and self-formed (Euhedral), etc. In a particular aspect, 'particles can be composed of any shape of polycrystalline diamond from winter θ 匕 3 or 疋, such as a cubic 曰 ~ of a poly day diamond. The term "mesh" as used in the art to which the invention pertains refers to the number of holes per unit area, such as usMeshes. Unless otherwise specified, the mesh sizes mentioned in the text are It refers to the size of the US standard mesh. In addition, because each particle is in a specific "mesh size", and actually will be within the size of the small towel field &amp; y- ^ , so the mesh size is usually understood The average mesh size of a whole group of particles, [the term &amp; substantially as used herein refers to the complete or near-complete range or degree of an action, feature, property, state, structure, article or result. "An object "substantially" is covered, meaning that it is completely covered, or is almost completely covered. The exact degree of deviation that can be allowed compared to absolute completeness, in some cases Depending on the specific text of the specification. However, the results obtained in the 'normally' approach to completeness will be as general as the results obtained in absolute and complete completeness. When "substantially" is used to describe the complete or near complete lack. In the case of an action, a feature, a property, a state, a structure, an article, or a result, the mode of use is equally applied as described above. For example, a "substantially not included" 11 201122401 particle composition is Completely lacking particles, granules and reaching the sound of the complete lack of particles. One π is completely lacking Wu 5, and the complex of the raw materials or elements of the mouth is not included. A large amount of 'the complex can still contain f疋.,., the law is eaten' raw materials and - the "soaked plate" used in the text - the word is the halogen. The way to conduct heat Transfer away - the θ diffusion of the heat source or the product. The soaking plate is different from the heat sink, and the heat sink is used as a material of σ 1 τ e A w „ , . _ , , , or a composite heat generating container until another An institution transfers heat from the heat sink, and ... does not store a certain amount of heat' merely transfers heat from a heat source. The term "heat source" as used herein means that - a has an expected A specific amount of thermal energy or a hot device or object. The heat source may include a device that generates heat as a by-product device; and the heat source may include an object that is connected to a heat transfer device and is heated by the heat transfer device. The heat transferred by another heat source is heated to a temperature that exceeds the expected temperature. The terms "chemical bond" and "chemical bond" used in the text can be used interchangeably with each other, and refer to the application of an attractive molecular bond between two atoms. The attraction is strong enough to create an atom. A binary entity compound at the interface. As used herein, the term "infiltrating" refers to a state in which a material is heated to its temperature to the melting point and then flows as a liquid through the pores between the particles. As used herein, the term "sintering" means that two or more separate particles form a continuous solid block. The sintering procedure involves securing the particles together and at least partially eliminating the voids between the particles. Sintered diamond particles generally require s super-Southern pressure and carbon solvent to be added as a sintering aid 12 201122401. As used herein, the terms "Cementing" and "Cemented" refer to a non-sintered state in which the particles are physically held together by the surrounding coated material. The material can be a metallic material. The term "metal" refers to metals as well as non-metals (Metalloids). The metal may comprise a compound which is generally considered to be a metal, an alkali metal and an alkaline earth metal which can be found in the transition metal. Examples of metals include: silver, gold, copper, aluminum, and iron. Non-metals include, in particular, bismuth, boron, antimony, bismuth, arsenic and antimony. The metal material also contains an alloy or a mixture containing a metal material. The foregoing alloys and mixtures may further comprise additives. In the present invention, the carbide forming element and the carbon wetting agent may comprise an alloy or a mixture, but not only a metal component. Examples of carbide forming elements include sharp, tantalum, titanium, hafnium, niobium, vanadium, niobium, chromium, molybdenum, manganese, niobium, tungsten, and chromium. 1 is equal to the use of 丫 r r - π ~ state rent homing. The S1 grade chart is that diamonds have fewer defects and inclusions. Due to manufacturing factors, synthetic diamonds are more likely to contain inclusions than natural diamonds. The less ruthenium and inclusions contained in the diamond, the better its thermal conductivity and more useful for the present invention. In addition, diamonds with niobium and inclusions are more susceptible to damage under certain manufacturing conditions. Choosing a diamond with a higher rating means deliberately selecting diamond particles with better quality. The so-called quality is the ruler: temporary price and / or shape. Higher grade diamonds represent the lowest level; get: :: drills are at least better than the previous level, and usually represent better than above; When based on the same diamond particle size, an increase in the grade of the diamond particle usually represents an increase in its price. High grade or more 13 201122401 The premium grade diamond granules include Diamond Innovations' MBS_96〇 diamond product, E|ement Six's SDB1100 diamond product, and lljin Diamond's 丨SD17〇〇 diamond product. The plural components used in this document are listed in a general list for added convenience. However, each of these lists must be individually considered as a separate and distinct part. Therefore, one of the independent parts of the list should not be interpreted to be substantially the same as any other part of the same list, simply because the same group in a list has no opposite characteristics. Concentrations, amounts, particle sizes, volumes, and other numerical data can be expressed or presented in a range. It should be understood that the scope of the present invention is to be construed as being limited to the scope of the The sub-range is as if the individual values and sub-ranges are generally quoted. For example, a range of values from "about 1 to about 5" is to be construed as not limited to the range of values that are clearly recited. Therefore, this numerical range includes independent values such as 2, 3, and 4, including such as l 3, 2-4..._5 and ", and 5 sub-ranges. This same rule applies to quote only a single value as a lower limit or In addition, this interpretation applies to any range of amplitudes and any of the described characteristics. The present invention - a soaking plate having a single layer structure composed of diamond particles can provide a thermal management economy and The mechanism of efficiency. Among the soaking plates, '201122401: Xuanqi:: a plurality of diamond particles in a single-layer structure with a single particle thickness. a a easy and practical ❼ uniform hot plate design, this hot plate design The connection with the heat source is highly efficient. The diamond particles can be solidified in the aforementioned single layer structure through a metal block, wherein the metal block together is suspected to be ft. In these embodiments The metal block is in the single layer. P is substantially free of other diamond particles. In addition, the diamond particles can be electrically charged with an electric bond layer selected from the group consisting of ruthenium, rhodium, and nickel. Copper' crane, hunger And one of the alloys thereof, thereby increasing the bonding strength between the diamond particles and the metal block. Further, the diamond particles are surface-modified by one of a heat treatment, a plasma treatment, and a chemical solvent treatment. Thereby, the bonding strength between the diamond particles and the metal block is enhanced. According to the embodiments presented herein, the present invention provides a heat transfer method suitable for various heat equalizing plates, a thermal management system, a heat equalizing plate, and a heat transfer method of a heat source. The details of the disclosure are therefore in the context of the discussion of a particular embodiment and the other related embodiments in the text. In one embodiment of the invention, the metal block is made of a single metal material. Containing metals as well as non-metals (eg, bismuth, boron, erbium, lanthanum, lanthanum, and lanthanum); in another embodiment, the metal block has more than one metal material. When the metal block contains more than one or more Materials, these metallic materials are presented in any structure, such as alloys, mixtures, phase-separated multilayer structures or Its spatial configuration, etc. In a particular embodiment, the heat spreader plate comprises aluminum. In another embodiment, the metal block comprises tantalum. In yet another embodiment, the metal block It may contain aluminum as well as tantalum, for example, an alloy containing both, and a mixture of '2011 and 201122401. The application to be used in the metal block should be selected according to special considerations to determine the choice. Electrically insulating metal materials or metal materials with more conductivity. The choice of materials also includes ductility, price, potential heat source, potential activity between processes, and Compatibility between other materials used, including any type of adhesive. In order to increase the thermal conductivity of the soaked plate, higher grade diamonds must be used. Right diamonds contain inclusions or other types. The defect, the thermal conductivity of the diamond coarse particles may not be higher than the metal materials such as copper. Diamond particles with better quality are able to transfer heat more quickly than diamond particles with poor quality. Therefore, the use of higher grade diamond particles can increase the overall thermal conductivity of the soaking plate. Diamonds with a regular shape can also increase the heat transfer rate of the soaking plate. Therefore, in some designs, diamonds that already contain shape rules are desirable. Diamond particles can be configured to enhance heat transfer and heat transfer. To enhance heat transfer and heat transfer, a diamond particle can be directly physics-contacted with diamonds. This 帛 is directly in physical contact with { diamond to diamond contact. In an embodiment, substantially all of the diamonds in a layer of structure ♦ may be diamond-to-diamond contact. Thus, substantially all of the diamond particles in the soaking plate may be in direct physical contact with at least one other diamond: in yet another embodiment, substantially all of the diamond may be in contact with one or less diamond particles, the extent of contact A continuous diamond particle path f is formed to circulate for heat supply. In other words, 'all diamond particles are in substantial contact with the body or composition of the diamond particles provided. In another embodiment, the diamond particles can be configured or laid out into a two-dimensional pattern. In one example, the diamond particles can be substantially equidistant from one another. In yet another embodiment 16 201122401, the diamond particles laid out may be diamond-to-diamond contacts. The particles can be configured to have the same or similar phantom directions, and the above embodiment can be enhanced in one step, and thus the φ, 、, 、, 、 、 、 、 、 、 、. In this embodiment, diamond particles may be laid to minimize the diamond plaque v; the gap between the stone particles. For example, substantially all of the diamond particles, a primary bismuth, have exposed the surface from the soaking plate. Alternatively, the diamond particles may have a tens of faces, wherein each of the diamond particles has its own surface aligned with the same size, and each of the diamond particles may have its surface aligned with a dry surface of the moonnet, such as aligning the single diamond. The top and bottom of the layer. In a certain embodiment, the single diamond layer structure may be partially exposed to the heat equalizing plate, and the crucible may be substantially covered by a non-diamond material, such as a metal block. Or it may be covered by a metal block and a carbon material composition, for example, covered by a metal block and a polycrystalline diamond. The material cost, processing cost, and the soaking plate expected to be used may be limited. The size of the single layer structure composed of diamond particles is smaller than the size of the heat equalizing plate to enhance the efficiency. For example, the diamond particles can be formed in a single layer structure adjacent one surface of the heat equalizing plate, but do not extend completely to the edge of the heat sink.

ϊ SI size also affects the ability of diamond particles to transfer heat. Larger diamond particles have better performance than smaller diamond particles. Similarly, diamond particles of the same size can increase the heat transfer capacity of a single layer structure composed of diamond particles. For its part, an embodiment of the invention contemplates that the size of the diamond particles is uniform. While the size of the diamond particles can be any size' in an embodiment of the invention, the diamond particles have a mesh size ranging from about 10 to about 100. In another embodiment, the diamond particles may have a mesh size of from about 20 to about 1 ο 〇, and may be from about 3 〇 to about 17 201122401 5 〇 J Jl yi* jz. 'Special use of diamond granules with a mesh size of 30/40, on the other - - ι- 10,000 sided, special use of diamonds with a mesh size of 40/50', in a particular embodiment, can be used more coarsely Diamond particles, such as those larger than 60 mesh or larger than 8 mesh mesh. Although the present invention contemplates that the single layer structure consisting of diamond particles can be located in the center of the ^ block, the single layer consists of diamond particles. The structure can be closer to the side of the metal block. This design allows the side of the metal block adjacent to the diamond particle layer to be placed close to the heat source. Therefore, the region closest to a heat source on the H-heat plate can have higher thermal conductivity than the region farther away from the heat source. In another embodiment, the single layer structure comprised of diamond particles can be affixed to at least one side of the metal block. Therefore, the diamond particles, 'and a single layer structure, can be fixed together in the heat equalizing plate through the metal block, but at least a portion thereof may be exposed outside a surface thereof. In this embodiment, a thin layer of non-diamond material or a film may be applied to the diamond particles. The non-diamond material may have a better thermal diffusivity to aid in the heat transfer of the homogenizer. In addition, the affixed material can be used to grasp or secure the hood heat sink to a heat source. In one aspect, a thin metal layer, such as a thin metal layer having a thickness of from about 50 to 200 nanometers, can be assisted by securing a 6-well heat plate to a heat source and isolating the heat source and diamond particles with a minimum of metal material. The soaking plate is in close contact with the heat source. The molten gold layer, such as aluminum and/or tantalum, can infiltrate and consolidate a single layer structure of diamond particles that is initially fixed by the organic binder. The organic adhesive is then fired into carbon to form an inlaid layer of carbon. In addition, another example of a carbon material coated on the exposed surface of the diamond particles is diamond-like carbon. Such a drill 18 201122401 carbon can be coated onto the diamond particles to form a relatively thin layer, such as a thickness of from about 400 to 700 nanometers. The diamond-like carbon can have a relatively high thermal conductivity and thus enhance the overall thermal conductivity of the soaking plate. In one aspect, the metal block can comprise substantially consisting of aluminum, stellite, copper, gold, silver, and alloys or mixtures thereof. In a detailed aspect, the metal block may comprise aluminum or tantalum. In a further aspect, the metal block can consist essentially of aluminum. In another aspect, the metal block can consist essentially of tantalum. In addition, the metal block may use only an aluminum-magnesium alloy or a composite of a magnesium alloy and other materials. In a further aspect, when the metal block comprises or consists essentially of aluminum, a portion of the aluminum can be anodized. Anodizing can be carried out on one or more surfaces of the aluminum. In one embodiment, the soaking plate through the aluminum consolidated-diamond particle layer may have a money surface. The anodized surface may be parallel to the single layer structure consisting of diamond particles, or may be further located on a portion of the heat equalizing plate relative to a heat source. In a particular embodiment, the anodized surface can be disposed between the diamond particle layer and a heat source. In a more specific embodiment, the anodized surface can be placed in direct physical contact with a heat source, and moreover, the anodized surface can be physically attached and/or chemically bonded to the heat source. . The higher diamond particle density in the single layer structure enhances the force of the soaking plate. When the single layer structure is a general method of using a single diamond particle thickness to capture diamond particles compared to other soaking plates, the filling efficiency can be improved. The efficiency of the filling is partly dependent on the k-state of the soaking plate (eg material used, temperature, time and pressure). [S.1 In the embodiment, the filling efficiency may be higher than about 50%. In another example, the filling efficiency may be higher than about 8%, and may even be higher than 90%. » In the embodiment - the filling efficiency may be higher than about. In the low pressure smear of diamond particles ("low bleed", the filling efficiency can range from about 5G to about 7Q% or higher. Filling efficiency can be improved by choosing larger diamond particles and the size and size of the grain. In yet another embodiment, the use of diamond particles having a uniform shape increases the filling efficiency. In particular, it is contemplated that other shapes of diamond particles may be used, and the substantially cubic diamond particles are most commercially available. The cube diamond can be filled in a single layer structure in an edge-to-edge manner. If the diamond particles are all oriented in the same direction rather than randomly in any direction, the thermal properties of the final composite can be enhanced. One of the factors to be considered in designing the soaking plate of the present invention is the thermal properties of the interface between the diamond particles and the thermal properties of the interface between the metal material and the diamond particles. The holes between the interfaces are like hot obstacles, in other words, the contact thermal resistance. Ideally, the entire side of the monolayer structure will have a positive contact with the sides of the other diamond particles. Ε.1 In some embodiments, the single layer structure consisting of diamond particles can be consolidated by a metal block. In some aspects, the aforementioned consolidation procedure can be achieved by infiltration with a metallic material. The appropriate infiltration temperature can be determined in accordance with the type of metal material used to infiltrate. Although infiltration can be performed at various temperatures, in one embodiment, infiltration can be carried out at temperatures below about η deg. The infiltration pressure can also be varied. The aforementioned pressure can be a low pressure relative to the system pressure. An example of such a low pressure may be less than about 00 atmospheres, less than about 50 atmospheres, less than about 10 atmospheres, and 20 201122401 less than about 5 atmospheres. In one embodiment, infiltration can be performed in a vacuum apparatus. In addition to the aforementioned infiltration procedure, a single layer structure consisting of diamond particles can be subjected to a discharge plasma sintering method (Spa "kp|asma SjnWjng, Spy sintered metal material, which is performed at a degree of latitude below about 1200 ° C. The pressure can be controlled from 100 MPa to 5.5 GPa through a hot pressing procedure (H〇t passing), and the temperature is between 700 and 11 degrees Celsius, which effectively combines the diamond particles with the metal matrix. A device, system, and method for transferring heat from a heat source. In one aspect, a thermal management system can include a soaking plate. The thermal management system can include a heat source that contacts the soaking plate. The soaking plate can have two On the opposite side, the side close to the heat source has a lower coefficient of thermal expansion and a higher thermal conductivity than the other side. The single consolidated diamond particle layer in the soaking plate can affect the coefficient of thermal expansion and thermal conductivity. In particular, the side of the soaking plate having the diamond grain layer has a low coefficient of thermal expansion and a high thermal conductivity. By adding a polycrystalline diamond (P〇丨ycrysta|Nne D The iam〇nd, PCD) layer can make the thermal properties of the diamond layer near the side of the heat equalizing plate more prominent. The polycrystalline diamond layer can be attached to the soaking plate and can be disposed on the soaking plate and Between the heat sources. Further, in some embodiments, a polycrystalline diamond layer may be in direct contact with the single layer structure consisting of diamond particles. For example, a diamond particle layer on a soaking plate is exposed to the soaking plate. On the surface, a polycrystalline diamond layer may be directly attached to the diamond particle layer. The soaking plate manufactured by the present invention may have a different structure according to the same. The above-mentioned soaking plate may be polished and may be based on Appropriate attention to the demand for the applied heat source for the soaking plate manufactured by the chemical vapor phase process ^ [ Si 21 201122401

(eg central processing unit (CPU)). The on/off heat plate is set to the average size based on the design and heat transfer principle. The most common is about 〇·ι mm reaching about 1 The degree of the diamond layer is about π formed into a circular or elliptical dish-like rectangle or other shaped sheet. The degree of closeness. In addition, the size is such that it can cover a large number of shapes to the desired application. Hot electronic or other components The soaking plate can be in direct contact with the component, and even the shape of the soaking plate can be shaped to directly connect the hot plate to a large area.言! Form a coated heat source, a heat source. Alternatively, the soaking plate may be separated from the heat source by a connection to a heat pipe or other heat transfer device. In addition to the soaking plates described herein, the present invention also includes a cooling unit, as shown in Figure A, for transferring heat away from a heat source in accordance with the teachings herein. A soaking plate 12 formed by the principle of discussion may be disposed in thermal contact with a heat source. The heat source may be a central processor 14 and a heat sink 16. The heat spreader transfers heat generated by the central processor to the heat sink. The materials and structures of the heat sink can be of various materials and structures known to those of ordinary skill in the art to which the present invention pertains. For example, aluminum and copper are known heat sink materials, and as shown in Figure A, the heat sink can include a plurality of heat sink fins 18. When the heat transfer of the central processor is quickly and efficiently transmitted through the heat spreader, the heat sink absorbs heat and the heat sink fins help to dissipate heat into the surrounding environment. A variety of different heat sinks, heat sources, and contact structures between the soaking plates can be used depending on the specific results to be achieved by 22 201122401. For example, the above-mentioned elements such as the heat equalizing plate may be disposed to be opposite to each other, or may be coupled or coupled to each other. In many cases, it may be beneficial to attach a soaking plate to the heat source. The foregoing additional procedures may be performed by brazing, soldering, chemical bonding, gluing, or any other chemical or mechanical attachment. The brazing method has better heat transfer efficiency than other additional materials, and thus can increase the efficiency of the soaking plate. Although the Shai heat sink 16 has several fins as shown in the figure, it is understood that the B-month can utilize any heat sink known to those skilled in the art. A heat/child example has been discussed in U.S. Patent No. 6,538,892, the disclosure of which is incorporated herein by reference. In the aspect of the invention, the heat sink comprises a heat pipe having an internal working fluid: an example of a heat pipe heat sink is discussed in U.S. Patent No. 6,517,221, the disclosure of which is incorporated herein by reference. As shown in FIG. B, in one aspect of the invention, the heat equalizing plate 12 may be at least partially embedded in the heat sink and or the heat source &lt; In this way, not only can the heat be transferred to the heat through the bottom of the heat equalizing plate; redundancy can also be transferred at least partially through the side of the heat equalizing plate to the heat sink. After the heat sink is embedded, the soaking plate can be tightly fitted (c〇mpress|〇n is fixed in the heat sink. In this way, no bonding material or hard floating material is present on the soaking plate and The combination or heat-welding material between the heat sinks will block the heat transfer from the soaking plate to the heat sink like an obstacle. - Although the heat-sinking plate can be fixed to the heat sink by various mechanisms in the technical field of the present invention, In terms of the hot plate, the hot-induced house contraction method is used for chat 23 201122401

Induced Compression Fit) is fixed in the heat sink. In this embodiment, the heat sink can be heated to a temperature to expand an opening in the heat sink. &quot; Xuanji hot plate can then be installed in the expanded opening, and the heat sink is then cooled. After cooling the heat sink with a relatively high coefficient of thermal expansion, the heat sink will shrink around the soaking plate and induce compression. The heat sink is embedded in the heat and does not require any bonding material between the two. A mechanical friction method can also be used to secure the soaking plate in the heat sink. In one aspect of the invention, the heat sink can include heat s 22 '. The heat pipe 22 has an internal working fluid (not shown). Hai. The working fluid may be any internal working fluid known to those of ordinary skill in the art to which the present invention pertains, and in one aspect it may be substantially water or water vaporized to maintain the working fluid in a sealed state. The heat pipe inside the heat pipe can be set to #近归, and in the aspect, the heat spreader plate can be welded to the heat pipe. In the embodiment of the __c diagram, the heat equalizing plate penetrates the outer wall of the heat B such that the bottom of the heat equalizing plate directly contacts the respective welds 26 of the working flow, thereby assisting in maintaining the sealed state of the heat pipe. In the case where the plate is in direct contact with the working fluid, the working fluid can more efficiently transfer the heat away from the n-fluid in the uniform case (the water in the present embodiment is not shown). ,,,, and the absorption of the plate from the average of the 柘 柘 柘 « « « « « « « « « « « « « « « « « « 工作 工作 工作拎f,., the messenger condensed at the bottom of the heat pipe 3, . 1 money,,. Forming a liquid, after which, due to the hair, it is seen that the liquid will recirculate 24 at the outer wall of the heat pipe that joins the soaking plate. The working fluid will re-evaporate and the wall will be high. Heat conduction is repeated in the earth. Due to the external AL β* «λ material produced by the thermal officer, heat can escape from the outer wall of the manifold to the surrounding air. ...&amp;

S.I 24 201122401 Due to previous use, size, materials, cost, and other considerations, it is possible to provide beneficial diamond-like carbon on the metal block. A diamond-like bear can be physically and/or chemically attached to a single layer structure to one or more sides or surfaces of the metal block. Compared to the surface of the (four) block, the diamond-like carbon can more efficiently disperse the heat from the soaking plate into the air. n The use of at least a carbon layer can be particularly beneficial to the structure of the heat sink. In a tenth embodiment, the single layer structure consisting of diamond particles can be located on the metal block closer to the heat source, and a type of drilled carbon layer can be located on the metal block relative to the heat source. In this configuration, thermal energy can flow from the heat source through the diamond particles (possibly through the diamond particles: first through a specific amount of metal blocks), through a portion of the metal block and then escape from the diamond-like carbon layer In the surrounding environment, for example, escape into the air. While the use of diamond-like carbon may provide additional benefits to structures that do not have a heat 2, the diamond-like carbon layer can still be used in embodiments with heat sinks. The diamond-like carbon layer may also be disposed on the metal (four) and between the heat source and the single layer structure composed of the diamond particles. In accordance with the present invention, a method of making a soaked plate can include arranging a plurality of diamond particles into a single layer structure having a thickness of a single diamond particle. This single layer structure has a thickness of one diamond particle. In the single-layer structure, when the diamond particles are stacked in a stacking manner, even two smaller diamond particles are mutually mutually (four) and the overall stack height is equal to - the south of the single-layer structure formed by the larger diamond particles In this case, the single layer structure with stacked diamond particles is still considered a single layer rather than a plurality of layers. The single layer structure is covered by a metal block. In addition to the diamond particles in the single layer structure, the metal block may substantially contain no diamond particles. m 25 201122401 The second figure shows an embodiment of the invention in which the heat equalizing plate 30 contacts the heat source 36. The heat source 36 shown in the Figure has a flat surface that is relatively easily in thermal contact with a substantially flat heat spreader. As shown, the heat equalizing plate 30 comprises a single layer structure comprised of diamond particles 32. The single layer structure consisting of diamond particles is covered by a metal block 34 which acts to consolidate the diamond particles. Referring to the seventh figure, in order to increase the filling efficiency of the diamond particles 32d, the diamond particles 32d may be cubic cube-shaped diamonds, as shown in the seventh figure. Similarly, a method of transferring heat away from a heat source can include: drawing thermal energy from a heat source into a soaking plate, wherein the heat source and the heat equalizing plate are in thermal contact with each other. In more detail, thermal energy can be drawn into the diamond layer of a soaking plate and then conducted into a metal block. In addition, the heat sink can be attached to a heat sink or heat pipe. This additional procedure allows thermal energy to be transferred from the soaking plate (e.g., a portion of the metal block) to the heat sink or heat pipe. Filling techniques can be used to improve the packing efficiency and the heat transfer characteristics of the early layer structure composed of diamond particles. This technique can generally involve mechanical configuration and/or agitation (e.g., vibration). As shown in the following example, the permeable-adhesive layer "is a layer of diamond particles adhered to the adhesive film to form a block of free diamond particles, thereby forming an early layer structure composed of diamond particles". The viscous layer is removed from the block to complete a single layer structure consisting of diamond particles. The single layer structure composed of diamond particles is covered by a metal block. The coating procedure may comprise a sinter-fill material (丨nte "smja| Mateh" is placed between at least a portion of the diamond particles. The interstitial material can be introduced into other layers of the process, infiltrated into layers consisting of diamond particles. In the structure, and then electrodeposition. Interstitial materials (such as silver, copper, and nickel) can be introduced into the diamond particle layer in an aqueous solution by an electrodeposition process. In this process, the deposited metal and diamond are not substantially deposited. Generate any chemical bonds between the gentlemen.'

The metal provided by '°月1J is usually placed in an acidic solution and can be used by those of ordinary skill in the art to which the present invention pertains. Many elements can also be added to reduce the surface tension of the solution or to increase the permeability of the solution to the pores. With regard to infiltration, it should be considered how the process would improperly affect the diamond particles. The configuration of the present invention makes the diamond more robust than the structure of other soaking plates. Due to the configuration of the single layer structure, the infiltration of diamond particles only in the process conditions It takes a little time, thus reducing the time it takes for the diamond particles to be exposed to potentially harmful conditions. In addition, the use of higher quality diamond particles as a whole means that the diamond particles are less damaged by this aggressive process and therefore more It is relatively less that the reverse phase change will occur. Another consideration is that the interstitial material must be carefully selected to avoid the infiltration temperature or the sintering temperature being too high to damage the diamond. Therefore, in one aspect of the invention, the interstitial material can be capable of An alloy that melts or sinters below about 1 (10) degrees Celsius. When it is above this temperature, the process should be shortened to avoid excessive damage to the diamond particles. The diamond metal: the internal metal content will crack from the inside. Causes diamond granules. Most synthetic diamonds contain -metal catalysts (such as iron, cobalt, bromine or alloys). Inclusions. These metal inclusions have a high heat/expansion coefficient' and allow the diamond particles to reverse phase back to graphite carbon. Therefore, at high temperatures, the drill enthalpy is produced by different thermal wastes of the metal inclusions. The crack 'either reverses from the diamond back to carbon. However, the problem of reverse phase transformation can be substantially eliminated by infiltrating the diamond in the stable region of the drill 27 201122401 stone under high pressure, for example, at more than about 5 billion kPa ( 5GPa) Under high pressure. In order to minimize the degradation of diamond quality, it is preferred to infiltrate at a temperature below 1100 ° C or in a stable area of diamond under high pressure. Some of the above-mentioned iron, brocade and some alloys Most alloys of copper, aluminum and silver can melt in this range. During the infiltration of the interstitial material, the hot metal inevitably causes a small decrease in the quality of the diamond. However, it can reduce the infiltration time and Minimizing the problem of quality degradation by carefully selecting the interstitial material, etc. Although the diamond may be damaged or reversed back to carbon under high temperature and high pressure conditions, in one embodiment, it may be less than about Infiltration is carried out at a temperature of 1000 ° C. Similarly, infiltration can be carried out under vacuum or reducing conditions. The oxidation of the molten metal material can also be avoided by using a vacuum atmosphere or a reducing atmosphere such as hydrogen. Oxidation also reduces the thermal conductivity of a metal material, so oxidation is a disadvantageous soaking plate. In one aspect, the single layer structure composed of diamond particles can be formed on a metal substrate or film, and then one can The metal material is infiltrated into the diamond particles. The infiltration can be combined with the metal substrate or the film to form a solid soaking plate β. The metal substrate and the metal infiltrating material can be the same or different materials. An example is shown in the third figure. Two separate layers of metal material 38, 4Q enclose the single layer structure consisting of diamond particles 32a. The heat equalizing plate 3Qa is in thermal contact with the heat source 36a°, in particular 'the metal material layer 40 is in contact with the heat source and 36a. As shown in the third figure, the diamond particles are substantially covered by the -metal material. Alternatively, the diamond particles may be coated with more than one metal material. In addition, the third figure shows diamonds (four) with different sizes of 2011 201141 as described above. The single layer, structure has a thickness of one diamond particle that is different from a diamond composite layer in which a plurality of diamond particles are stacked to the entire thickness. The fourth figure shows a soaking plate 30b having a shortened diamond particle layer 32b. The diamond particle layer 32b does not extend completely to the length of the entire heat equalizing plate. On the contrary, it is limited in size to approximate the size of the heat source 36b. Due to the diamonds in the soaking plate, the above structure is very economical. This embodiment includes a metallic material 42 that extends the soaking plate into a block shape. The metal material 42 may be the same as or entirely different from the metal material coated with the layer of the fine stone particles. In the aspect of the invention, a soaking plate can be fabricated which comprises an early layer structure consisting of diamond particles, wherein the single layer structure consisting of diamond particles is along the surface of the soaking plate. The diamond particles can be consolidated, and the soaking plate comprises a genus material, thus creating a difference in conductivity of the soaking plate from one side (diamond particle layer) to the other opposite side (metal material). A heat source can be contacted at the surface of the diamond or at the exposed surface of the tip. Further, a polycrystalline diamond layer may be attached to the single layer structure composed of the particles. μ · Manufacturing 2 content has presented the soaking plate, thermal management system, and soaking plate of the present invention. Compared with the method of the present invention and the use of the soaking plate, the soaking plate of the conventionally used diamonds is expensive and inefficient. Diamond-containing: Diamond layer made by chemical vapor deposition is time consuming and costly. Or, some of them use diamond particles. Then, these diamond particles are presented in a two-dimensional manner. The use of a large number of diamond particles distributed in the composite h Μ design is to increase the thermal conductivity by increasing the volumetric capacity. Tian... When using a large number of diamonds, lower grade diamonds are used to reduce the overall cost of S1 29 201122401. Moreover, in one embodiment, the diamond particle layer is strategically utilized where it is most needed, i.e., at the hottest spot on the heat source. The use of a limited number of strategically placed higher quality diamonds ultimately reduces the cost of the soaking plate and allows the soaking plate to have the same or higher thermal transfer capability. Furthermore, the soaking plates mentioned herein can have higher filling efficiencies and are easier to manufacture than previous designs. Intuitively, it is easier to fill diamond particles in a single layer structure than to arrange diamond particles in three dimensions. It is extremely difficult to fill the diamond particles to two-thirds of the three-dimensional volume. Conversely, the single-layer structure can be filled with different particle sizes or even with different particle directions, thereby increasing the thermal conductivity of the soaking plate. The consolidation and processing of the single diamond layer requires less infiltration time and can perform efficient infiltration at low temperatures and/or low pressures, so that it is less in process than conventional diamond composite heat spreaders. Damaged diamond particles. Since the diamond particles are not damaged or damaged during the process, the thermal conductivity of the diamond particles is not lowered, and it is not uncommon for the conventional process to reduce the thermal conductivity of the diamond particles. Another advantage of this design is that it provides better thermal connectivity between the soaking plate and the heat source. In the embodiment in which the diamond layer is closer to the heat source, the coefficient of thermal expansion of the soaking plate is specifically designed to be suitable for connecting the heat source and the heat sink. The coefficient of thermal expansion is lower on the side with the iron, that is, the thermal expansion coefficient of the side closer to the heat source is 16. In contrast, the coefficient of thermal expansion near the heat sink or the heat pipe 4 is higher. This is the ideal structure for long-term connections. When the thermal expansion rate does not match, the repeated expansion and contraction due to the change in heat will cause the joint to rupture and damage. Any crack between the heat source and the soaking plate or 30 201122401 is a hole that will greatly reduce the efficiency of the system. The same principle applies to the side where the soaking plate is connected to a heat sink or heat pipe. A typical diamond composite has a uniform or at least similar expansion coefficient at its two junctions. The soaking plate presented in X effectively bridges the gradient of the coefficient of thermal expansion and provides a durable and durable joint structure. ★ The following examples present various different soaking plate manufacturing methods of the present invention. These examples are for illustrative purposes only and are not intended to limit the invention. Example Example 1 Homogenization Plate Manufacturing Method Diamond particles passing through 3〇/4〇 US mesh size (Element Six SDB1100) were thoroughly cleaned in acetone by ultrasonic vibration. A 100 micron thick reduced copper film was placed on a steel tray. A double-sided adhesive layer of _ μ μm thickness was attached to the copper film. The diamond particles are spread to the top of the adhesive layer and the diamond particles are disturbed by ultrasonic vibration to increase the filling efficiency. The tray is turned over to remove diamond particles that are not adhered to the adhesive layer. Once the loose diamond particles are removed, the tray is flipped again to its original state. Place a 2 mm thick pure aluminum plate on top of the diamond particles. The foregoing configuration is as shown in Fig. 5a, in which the copper layer having the adhesive layer 46 includes a single layer structure composed of diamond particles 48 covered by an aluminum plate 50. The tray was placed in a vacuum furnace and heated to 680 degrees Celsius. The aluminum material penetrates into the gap between the diamond particles. Cool the tray. After cooling, the aluminum solidifies the diamond particles and firmly bonds the copper film. The finished product of the soaking plate is shown in Figure 5b, which is similar to the third figure. Example 2 Manufacturing method of complex soaking plate This example is followed by the process of Example 1. Before the introduction of diamond particles, 31 201122401 first put a plurality of copper pieces on the adhesive layer. The adjustable copper configuration results in an exposed layer of 2 mm square millimeters exposed. Once the tray is cooled, the top surface of the aluminum is ground to a smooth shape, and the sheet is cut along the center line of the copper sheet for separation (wj=

Electrical Discharge Machining, Wire-EDM ) 形成 Through the aforementioned cutting, a plurality of soaking plates of approximately 40 mm are formed. Each piece of hot plate contains approximately 1600 crystals (approximately 4 carats, costing 80 cents), and each crystal is flat and firmly embedded in the copper film. The sixth figure shows the present example - an exemplary plate 52 having a plurality of heat equalizing plates 56 that have not been cut. A copper sheet 54 (covered by aluminum) separates each of the heat equalizing plates 56, each of which has a single diamond layer. The heat spreader can be soldered directly to a computer chip and/or soldered to a heat sink or a heat pipe. The diamond layer has a thermal conductivity of about 1 watt/m•degree (W/mK), which is about 2.5 times higher than the thermal conductivity of copper. Such high thermal conductivity effectively removes hot spots on the computer chip. This heat is transferred from the other side of the diamond particles to the aluminum block and further to the connected heat sink or heat pipe. Example 3 Helium-containing soaking plate This example step is almost as described in the first example, except that a bright enthalpy is placed in the aluminum and infiltrated at 1450 degrees Celsius. Its final product is an electrical insulator relative to the conductive copper. Further, the thermal expansion coefficient of the composite is smaller than that of the first example. If excessive diffusion occurs between the infiltrated material and the copper film, the beryllium and tantalum will lower the thermal conductivity. In addition, the copper film is thus dissolved. In this example, a layer of more refractory metal can be applied to the copper film to become a barrier. For example, a layer of tungsten can be splashed on the copper film. The heat conductivity of the crane is not low and it is very thin (for example, a few nanometers thick), so its thermal resistance can be ignored. 'Example Four 矽-containing soaking plate The diamond particles passing through the 3〇/4〇 US mesh size (Element Six SDB11 〇〇) are vibrated into a neat layer structure on the aluminum plate with the frame. A wafer (Wafer) is placed on top of the filled diamond layer. The tray was placed in a vacuum oven and heated to Celsius for 20 minutes. The crucible melts and fills the pores between the diamond particles. The aluminum plate is cooled. The surface of the cooled aluminum plate is ground to flatten it so that it can be more easily attached to a heat source. Example 5 Homogenizer with Shixia Aluminum Alloy This example procedure is roughly as described in Example 4, except that the tantalum wafer is replaced by tantalum aluminum alloy. In addition, the infiltration is carried out at 1 degree Celsius. It should be understood that the foregoing is merely illustrative of the application of the principles of the invention. Various modifications and different configurations are possible in the technical field to which the present invention pertains without departing from the scope and spirit of the invention, and the appended claims are intended to cover such modifications and various configurations. Therefore, when the details of the presently considered to be the most practical and preferred embodiments have been disclosed above, it will be apparent to those of ordinary skill in the art to which the present invention pertains. Making a non-party limited to a variety of changes in size, material, shape, form, function, method of operation, assembly and use. BRIEF DESCRIPTION OF THE DRAWINGS The first A is a schematic view of an embodiment of a soaking plate of the present invention, wherein the ~, [Ώ 33 201122401, the heat transfer plate of the soaking plate - the heat source and the heat sink. First 阁 阁 g

Figure K is a schematic view of another embodiment of a soaking plate of the present invention, the heat-sinking plate heat-heat source and the H-C diagram are schematic representations of another heat-sinking plate embodiment of the present invention, the heat-sinking plate is thermally coupled to a heat source and Heat sink. The middle figure is a side cross-sectional view of another embodiment of the soaking plate of the present invention. J-View A First side view of another embodiment of a soaking plate of the present invention, wherein the soaking plate comprises two different metallic materials and is adjacent to a heat source. A is a side cross-sectional view of another embodiment of a soaking plate of the present invention, wherein the soaking plate comprises a single layer of diamond having a specific width. 'A' is a side cross-sectional view of an exemplary initial step of the method for producing a soaked plate of the present invention, which corresponds to Example 1. A side cross-sectional view of an exemplary soaking plate produced by the method for producing a soaked plate of the present invention, which corresponds to the first example. Fig. 6 is a top perspective view showing an exemplary initial step of the method for manufacturing a soaked plate of the present invention, which corresponds to Example 2. Figure 7 is a side cross-sectional view showing another embodiment of the soaking plate of the present invention, the heat-generating plate being adjacent to the heat source, wherein the diamond particles are cube-shaped cubic diamonds. OBJECTS It should be understood that the above drawings are for illustrative purposes only for the purpose of further understanding of the invention. In addition, the above-mentioned schema is not green in accordance with the actual scale, and its size, particle size and other aspects are often exaggerated to clearly show the invention. Therefore, it is possible to modify the dimensions shown in the above schema. Manufacturing the uniform plate of the present invention., [S.] 34 201122401 [Description of main components] 1 2 heat spreader 1 4 central processor 16 heat sink 1 8 heat sink fin 22 heat pipe 26 brazed portion 30, 30a, 30b heat spreader 32, 32a, 32b, 32d diamond particles 34, 34b metal block 36, 36a, 36b heat source 40 metal material layer 42 metal material 46 adhesive layer 48 diamond particles 5 0 aluminum plate 35

Claims (1)

201122401 VII. Patent application scope: 1. A heat equalizing plate having a single layer of diamond particles, comprising: a metal block coated with a plurality of diamond particles, the plurality of diamond particles being configured as a single layer structure' The thickness of a single particle that is consolidated with the diamond particles and has substantially no other diamond particles inside. 2. A heat equalizing plate having a single layer of diamond particles as described in claim 1 wherein the metal block is a single beta metal material. 3. A heat spreader having a single layer of diamond particles as described in claim 1 wherein the metal block comprises more than one metal material. 4. A soaking plate having a single layer of diamond particles as described in claim 3, wherein the metal block comprises a plurality of layers of different metal materials. 5. A soaking plate having a single layer of diamond particles as described in claim 1 wherein the metal block comprises a metal alloy. 6. The soaking plate having a single layer of diamond particles according to claim 1, wherein the metal block comprises a component selected from the group consisting of aluminum, bismuth, copper 'gold, silver, and alloys thereof. . 7. A soaking plate having a single layer of diamond particles as described in claim 6 wherein the metal block comprises aluminum. 8 _ A soaking plate having a single layer of diamond particles as described in claim 7 of the claim, wherein the metal block comprises an aluminum-magnesium alloy. 9. A soaking plate having a single layer of diamond particles as described in claim 7 of the Shenqing patent scope wherein at least a portion of the aluminum is anodized. 10. A soaking plate having a single layer of diamond particles as described in claim 6 wherein the metal block comprises niobium. 36 201122401 1 1. A soaking plate having a single layer of diamond particles as described in claim 6 wherein the metal block consists essentially of aluminum or tantalum. 12. A soaking plate having a single layer of diamond particles as described in claim 6 wherein the metal block comprises a mixture of aluminum and ruthenium or an alloy. 13. A soaking plate having a single layer of diamond particles as described in claim 1 wherein the diamond particles are high grade diamond particles. 14. A soaking plate having a single layer of diamond particles as described in claim 1 wherein the diamond particles are substantially uniform in size or shape. 15. A soaking plate having a single layer of diamond particles as described in claim 14 wherein the diamond particles are cube-shaped cubic diamonds. 16_ As disclosed in claim 1, the soaking plate having a single layer of diamond particles, wherein the sho is sintered by a plasma sintering method in a single layer structure composed of diamond particles, the sintering process is lower than about The temperature of 1 200 degrees Celsius is not carried out. 17. A soaking plate having a single layer of diamond particles as described in claim 1 wherein the diamond particles are surface modified by one of a heat treatment, a plasma treatment, and a chemical refrigerant treatment. 1 8 A soaking plate having a single layer of diamond particles as described in claim 1 wherein the mesh size of the diamond particles is from about 20 to 100 » 1 9 as described in claim 18 The single-layer diamond particle's sentence hot plate 'where the diamond particle has a mesh size of about 30 to 50. 20. A soaking plate having a single layer of diamond particles as described in the scope of claim 2 wherein the single layer structure consisting of diamond particles is closer to one side of the metal 37 201122401 block and further away from the metal block - opposite side. </ RTI> 21. A soaking plate having a single layer of diamond particles as described in claim 1 wherein the filling efficiency of the single layer structure consisting of iron particles is about greater than 50%. 22. A soaking plate having a single layer of diamond particles as described in claim 21 of the patent, wherein the filling efficiency of the layered structure of the diamond particles is greater than about 80%. 23_If you apply for a patent range! The soaking plate having a single layer of diamond particles, wherein the thickness of the soaking plate is about 1-1 to 30 times the thickness of a single diamond particle. The heat-receiving sheet according to the item of claim 2, wherein the single-layer structure composed of diamond particles is infused with a metal material. 25. A soaking plate having a single layer of stony particles as described in the patent application 帛24, wherein the infiltration procedure is carried out at a temperature below about 1 degree Celsius. 26- A soaking plate having a single layer of diamond particles as described in claim 24, wherein the infiltration procedure is carried out under vacuum. 27. A soaking plate having a single layer of diamond particles as described in claim 26 wherein the infiltration procedure is carried out at a pressure below (10) atmosphere. ^ 8 · A soaking plate having a single layer of diamond particles as described in claim 1 of the patent scope, further comprising a polycrystalline diamond layer attached to the surface of the soaking plate. h 29. The hot plate having a single layer of diamond particles according to the scope of claim 2, wherein the diamond particles are subjected to a hot pressing process, and the pressure of the hot press 38 201122401 is from 1 GGMPa to 5.5 Gpa, and the temperature is For a distance of 1 000 degrees Celsius. 30·~ claiming the patent scope of the item i, having a single layer of diamond particles, wherein the diamond particles are plated with a plating layer, which is selected from the group consisting of titanium, chrome, copper, tungsten, tantalum , sharp, wrong, pin and one of its alloys. 31. A method of transferring heat from a heat transfer plate by a soaking plate, comprising: a self-heat source for drawing thermal energy into a diamond layer of a soaking plate, wherein the soaking plate is in thermal contact with the heat source, the diamond layer For a single-layer structure having a U-stone particle thickness, the advancement transfers heat through the diamond layer and passes into a metal block that is substantially consolidated with the stone particles, except for the drill/metal block. The diamond particles in the diamond layer contain substantially no other diamond particles. According to the 31st item of the patent scope of the patent, the heat transfer plate of the heat transfer plate is used to transfer the heat source, which further includes the material outside the mountain of Chiang Kai-shek. 3 Transfer the hot moon raft from the metal block to the -2nd VI application patent range, as described in item 32 of the heat transfer plate... The hot method 'in which the heat energy is transferred to the heat sink or:: The heat 3: the heat transfer plate heat transfer source described in Item 31 of the square circumference is added to the heat source. 35 'A method of applying the heat described in claim 34, wherein the 嗦 &amp;&amp; ..., the plate transfer heat source is applied for soldering or soldering to the heat source. The hot method, wherein the soaking plate package n l, 'plate transfer heat source ^ S metal material 枓, the metal material 39 201122401 is selected from one of Ming, Shi Xi, copper, gold, silver and alloys thereof. Eight, schema: (such as the next page)