CN102130077A - Soaking plate with single layer of diamond particles and correlation method thereof - Google Patents

Soaking plate with single layer of diamond particles and correlation method thereof Download PDF

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Publication number
CN102130077A
CN102130077A CN 201010004212 CN201010004212A CN102130077A CN 102130077 A CN102130077 A CN 102130077A CN 201010004212 CN201010004212 CN 201010004212 CN 201010004212 A CN201010004212 A CN 201010004212A CN 102130077 A CN102130077 A CN 102130077A
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diamond grains
soaking plate
diamond
heat
individual layer
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宋健民
胡绍中
甘明吉
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Laizuan Technology Co., Ltd
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宋健民
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
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Abstract

The invention provides a soaking plate with a single layer of diamond particles and a correlation method thereof, and the soaking plate can provide effective thermal management with cost efficiency. The soaking plate contains multiple diamond particles, and the diamond particles are configured into the single layer structure and wrapped by a metal block body. The metal block body and the diamond particles are fixedly combined together. The diamond particles have thickness of the single diamond particle. In addition to the diamond particles in the single layer structure, other diamond particles are not contained in the metal block body almost. The invention further provides a thermal management system which comprises a thermal source and the soaking plate. The invention further provides a manufacturing method and a using method of the soaking plate.

Description

Soaking plate and correlation technique thereof with individual layer diamond grains
Technical field
The invention relates to a kind of set composite of carbon containing and the method for dispelling the heat by conduction and the heat that absorbs thermal source.Therefore, the present invention relates to fields such as chemistry, physics, semiconductor science and technology and material science.
Background technology
The trend of the common founder Ge Deng mole (GordonMoore) of Intel in the Moore's Law that nineteen sixty-five proposed is being followed in the development of semi-conductor industry.This trend is pointed out, integrated circuit (IC) or general semiconductor wafer, and its usefulness was just grown up one times in per 18 months.
Follow this progress, produced the challenge in the various designs.Wherein a commonly overlooked challenge is a heat dissipation problem.Usually, the design of this heat radiation aspect can be left in the basket, or has arrived element and will produce preceding this design that just increases.According to the second law of thermodynamics, in a closed system, do many more merits and then can obtain many more entropys (Entropy).Be accompanied by the increase of central processing unit (CPU) power, it produces more electron stream can produce more heat.Therefore, for fear of short circuit or burn, must remove the heat that increase produced because of entropy.Its power of the existing technology of some central processing units is about more than 70 watts.A central processing unit with 0.13 micron scientific and technological manufacturing for example, its power consumption can be above 100 watts.Present heat dissipating method, as using heat dissipation metal fin (metal fin radiators), for example metal such as aluminium or copper and water steaming formula heat pipe (waterevaporation pipes) can't dispel the heat fully to the processor in next epoch.
Recently, ceramic soaking plate (for example aluminium nitride) and metal composite soaking plate (for example carborundum/aluminium) have been used to deal with ever-increasing heat.Yet the pyroconductivity of these materials also is not more than the pyroconductivity of copper, and therefore, these materials are limited for semi-conductive heat-sinking capability.
General semiconductor wafer comprises metallic conductor (for example aluminium, copper) and the ceramics insulator (for example oxygen, nitrogen) that closely stacks.The coefficient of thermal expansion of metal generally is 5-10 a times of ceramic coefficient of thermal expansion.When the wafer heating was spent above Celsius 60, the coefficient of thermal expansion difference between metal and the pottery can cause minute crack.Gradient of temperature circulation repeatedly causes the infringement of wafer to worsen.As a result, semi-conductive usefulness can descend.In addition, when chip temperature was above above 90 degree Celsius, semiconductor portion branch became conductor in the wafer, thereby causes the disabler of wafer.In addition, circuit may be damaged and semiconductor can't re-use (as transfer to " burning ").Therefore, in order to keep semi-conductive usefulness, its temperature must remain below a critical value (90 degree for example Celsius).
Traditional heat dissipating method is to make a metal heat sink (Heat Sink) contact this semiconductor.General heat sink be that aluminium manufacturing with several pieces radiating fins (Fins) forms.Add on these several pieces radiating fins a fan is arranged.The heat that wafer produced can flow to aluminium base, and can be transferred on the radiating fin, then by the cross-ventilation of circulation heat is taken away from the radiating fin place.Heat sink thus often be designed to have high heat capacity and as heat holder, to remove the heat of thermal source.
Perhaps, can use heat pipe (heat pipe) to be connected between this heat sink and cooler (radiator), this cooler is and this heat sink being separated.This heat pipe is the vacuum tube that is sealed with steam.Moisture in the heat pipe evaporates at heat sink place, and solidifies at the cooler place.The capillarity that the moisture that solidifies can be produced by the porous media (for example copper powder) in the heat pipe is back to heat sink place.Therefore, can take away heat on the semiconductor wafer by moisture evaporated, and can remove heat by the moisture that solidifies at the cooler place.
Though but the heat pipe and the hot plate utmost point remove heat efficiently, complicated vacuum pipe inner cavity and accurate capillary system stop this heat pipe-type heat dissipation design to be reduced in size directly semiconductor element is dispelled the heat.As a result, this heat pipe-type heat dissipating method is limited in usually relatively large thermal source is carried out heat conduction, and for example one is heat sink.Therefore. how removing heat on the electronic component by heat exchange pattern, is the subject under discussion that still continues research in the industry now.
At present found that another selection that can be expected to as soaking plate is the material that is rich in diamond.Diamond is compared other any materials can take away heat more quickly.At room temperature pyroconductivity of diamond (about 2000 watts/meter. absolute temperature (W/mK)) be five times the height of copper pyroconductivity (approximately 400W/mK), and be the height of the octuple of aluminothermy conductivity (approximately 250W/mK), copper and aluminium are the metal fever conductors with high thermoconductivity of normal use at present.In addition, the thermal diffusivity of diamond (Thermal Diffusivity) (12.7 square centimeters of/second (cm 2/ sec)) be copper thermal diffusivity (1.17cm 2/ sec) or copper thermal diffusivity (0.971cm 2/ sec) 11 times.Diamond is taken away heat rapidly and the ability of non-stored heat makes diamond become desirable soaking plate.Than heat sink, can apace heat conduction be left thermal source and non-stored heat during the soaking plate running.Table 1 shows the thermal property (numerical value when absolute temperature 300 spend) of various different materials than diamond.
Table 1
Material Pyroconductivity (W/mK) Specific heat (J/cm3K) Coefficient of thermal expansion (ppm/K)
Copper 401 3.44 16.4
Aluminium 237 2.44 24.5
Molybdenum 138 2.57 47.5
Gold 317 2.49 14.5
Silver 429 2.47 18.7
Tungsten carbide 95 2.95 5.7
Silicon 148 1.66 2.6
Diamond (IIa grade) 2,300 1.78 1.4
In addition, the thermal coefficient of expansion of diamond is minimum in all material.The low-thermal-expansion rate of diamond makes diamond to combine with the Si semiconductor with low-thermal-expansion rate easilier.Because this characteristic, the pressure that combines interface between diamond and the semiconductor can be reduced to minimum.
In recent years, the diamond soaking plate is used to the high power laser diode is dispelled the heat, and for example is used in Laser Diodes to promote the luminous energy in the optical fiber.Yet large-area diamond is very expensive; Therefore, the past comes central processing unit is dispelled the heat at the commercial diamond that do not use.In order to allow diamond diamond surface be polished, make its contact semiconductor wafer closely as soaking plate.In addition, its can metallize (for example by titanium/platinum/silver) for diamond can with the hard solder mode append to conventional metals heat sink on.
Present many diamond soaking plate are by chemical vapour deposition technique (Chemical VaporDeposition, CVD) the diamond film manufacturing of Xing Chenging.For example, the raw material of chemical vapour deposition (CVD) diamond film, its price is higher than 10 U.S. dollar/square centimeters, the twice that to polish with metallized diamond film price then be aforementioned price.This high price situation makes the diamond soaking plate to be widely used, except some only needs the small size heat radiation or does not have other better soaking plate can supply the application (for example high power laser diode) that substitutes.Except costliness, the chemical vapour deposition (CVD) diamond film can only be with the growth of speed very slowly (for example per hour increased numbers micron).Therefore, these diamond film aquatic foods surpass one millimeter thickness (generally about 0.3 to 0.5 millimeter) less.Yet, if the heat dissipation region of wafer big (for example central processing unit) must be good with thicker soaking plate (for example 3 millimeters).
Except the diamond product made from chemical gaseous phase depositing process, existing people attempts using the particulate diamond of a monoblock or " glomerocryst diamond (Polycrystalline Diamond) " forms soaking plate.The example of these devices is exposed in the 6th, 390, No. 181 patent cases of the U.S. and the U.S. and discloses among No. 2002/0023733 patent application case, and these patent documents are integrated in herein with as a reference.Generally speaking, be by under high pressure-temperature (HPHT) condition, use cobalt to come sintering diamond particle, to form PCD product (or densification product) as sintering additive.Perhaps, can use silicon or silicon alloy is consolidated diamond grains, as the U.S. the 4th, 124,401 and 4,534, No. 773 the patent case discloses.The size of employed diamond grains is in the magnitude range of micron in the general sintering program.Therefore, PCD is fine and close, and thing generally has a large amount of granule boundaries, and is coated with the second phase material of a low heat conductivity on each particle.Because the physics specific heat of the fine and close thing of this kind PCD is limited in transmission or heat conduction, usefulness is bad during therefore as soaking plate.
Therefore, still can effectively carry out heat conduction and heat radiation and have cost-benefit system and device at present a thermal source in research and development constantly.
Summary of the invention
Therefore, the invention provides a kind of soaking plate, it can be used in the heat of taking away a thermal source in the mode of drawing or conduction is hot.On the one hand, soaking plate comprises many diamond grains, and these many diamond grains are configured to a single layer structure, and coat this single layer structure with a metal blocks.The thickness of this diamond grains single layer structure can be the thickness of single particle.Metal blocks can have the effective adhesive diamond grains, and the diamond grains in single layer structure, this metal blocks can not comprise non-diamond grains haply.In another variation example of soaking plate, a diamond grains single layer structure can have a thickness in monolayer, and wherein each diamond grains direct physical ground contacts another diamond grains.One metal blocks can be with the diamond grains co-cure at least one side of soaking plate.
The aforementioned metal block is a single metal material.
The aforementioned metal block includes the metal material more than more than one.
The aforementioned metal block comprises the different metal material of multilayer.
The aforementioned metal block comprises a metal alloy.
The aforementioned metal block comprises a composition, and this composition is be selected from aluminium, silicon, copper, gold, silver or its alloy wherein a kind of.
The aforementioned metal block comprises aluminium.
The aforementioned metal block comprises an almag.
At least a portion of aforementioned aluminium has anodization.
The aforementioned metal block comprises silicon.
The aforementioned metal block is made up of aluminium or silicon basically.
The aforementioned metal block comprises the mixture or the alloy of aluminium and silicon.
Aforementioned diamond grains is high-grade diamond grains.
Aforementioned diamond grains is size or the profile that has uniformity haply.
Aforementioned diamond grains is the prismatic crystal diamond of cubic type.
With discharge plasma sintering method sintered metal materials, this sintering manufacture method is to carry out under the temperature that are lower than 1200 degree approximately Celsius in the aforementioned single layer structure of being made up of diamond grains.
Aforementioned diamond grains handles by heat treatment, electricity slurry and wherein a kind of handling procedure of chemical solvent processing carries out surfaction.
The size of mesh of aforementioned diamond grains is approximately from 20 to 100.
The size of mesh of aforementioned diamond grains is approximately from 30 to 50.
The aforementioned single layer structure of being made up of diamond grains is near a side of metal blocks and than another opposite side away from metal blocks.
It is aforementioned because the charging efficiency of the single layer structure that diamond grains is formed is approximately greater than 50%.
It is aforementioned because the charging efficiency of the single layer structure that diamond grains is formed is approximately greater than 80%.
The thickness of aforementioned soaking plate is about 1.1 to 30 times of single diamond grains thickness.
Infiltration has metal material in the aforementioned single layer structure of being made up of diamond grains.
Aforementioned infiltration program is to carry out under the temperature that is lower than 1000 degree approximately Celsius.
Aforementioned infiltration program is to carry out under vacuum condition.
Aforementioned infiltration program is to carry out being lower than under the 100 atmospheric pressure.
Aforementioned soaking plate with individual layer diamond grains, it further includes one and is attached to soaking plate one lip-deep glomerocryst diamond layer.
Aforementioned diamond grains is through a hot pressing routine processes, and the pressure of this hot pressing program is from 100MPa to 5.5Gpa, and temperature is from 700 to 1000 degree Celsius.
Aforementioned diamond grains is electroplate with an electrodeposited coating, and this electrodeposited coating is be selected from titanium, chromium, nickel, copper, tungsten, vanadium, niobium, zirconium, molybdenum or its alloy wherein a kind of.
Similarly, the invention provides and a kind ofly shift the method for the heat of thermal source with soaking plate, it comprises: the heat energy of a thermal source is adsorbed onto among the diamond layer of a soaking plate.Embodiment as the aforementioned, this soaking plate can comprise a diamond grains single layer structure, and its thickness is the thickness of single particle.The heat energy of thermal source can be transmitted to a metal blocks that coats haply and diamond grains is consolidated.Moreover the diamond grains among single layer structure, this metal blocks can not comprise diamond grains haply.
Aforementionedly shift the method for the heat of thermal source with soaking plate, it further comprises heat energy is transferred to an extra material by this metal blocks.
Aforementionedly shift the method for the heat of thermal source, wherein further heat energy is transferred to a heat sink or heat pipe with soaking plate.
Aforementioned soaking plate is to append on this thermal source.
Aforementioned soaking plate hard solder or be welded on this thermal source.
Aforementioned soaking plate comprises a metal material, and this metal material is selected from the wherein a kind of of aluminium, silicon, copper, gold, silver or its alloy.
The reader earlier various features of the present invention described at this, so that can more understand detailed description of the present invention afterwards in broader mode.All the other features of the present invention will perhaps be known by enforcement the present invention to present by the following detailed description of the invention and claims.
Description of drawings
Figure 1A is the schematic diagram of the present invention one soaking plate embodiment, wherein hot connection one thermal source of this soaking plate and heat sink.
Figure 1B is the schematic diagram of another soaking plate of the present invention embodiment, wherein hot connection one thermal source of this soaking plate and heat sink.
Fig. 1 C is the schematic diagram of another soaking plate of the present invention embodiment, wherein hot connection one thermal source of this soaking plate and heat sink.
Fig. 2 is the side sectional view of another soaking plate of the present invention embodiment, wherein the adjacent thermal source of this soaking plate.
Fig. 3 is the side sectional view of another soaking plate of the present invention embodiment, and wherein this soaking plate comprises two kinds of different metal materials, and an adjacent thermal source.
Fig. 4 is the side sectional view of another soaking plate of the present invention embodiment, and wherein this soaking plate comprises an individual layer diamond layer with specific width.
Fig. 5 A is the side sectional view of an exemplary initial step of soaking plate manufacture method of the present invention, its corresponding embodiment one.
Fig. 5 B figure is the side sectional view of an exemplary soaking plate product of soaking plate manufacture method of the present invention, its corresponding embodiment one.
Fig. 6 is the top perspective outside drawing of an exemplary initial step of soaking plate manufacture method of the present invention, its corresponding embodiment two.
Fig. 7 is the side sectional view of another soaking plate of the present invention embodiment, the adjacent thermal source of this soaking plate wherein, and wherein diamond grains is the prismatic crystal diamond of cubic type.
Will be appreciated that, above-mentioned graphic only as illustrating purposes further to understand the present invention for other people.In addition, above-mentioned graphic be not to draw according to physical size, the clear the present invention that shows is exaggeratively usually drawn in so its size, granular size and other aspects.Therefore, can make amendment at above-mentioned graphic shown size and other aspects and make soaking plate of the present invention.
The main element symbol description
12 soaking plate
14 central processing units
16 is heat sink
18 radiating fins
22 heat pipes
26 hard solders place
30,30a, 30b soaking plate
32,32a, 32b, 32d diamond grains
34, the 34b metal blocks
36,36a, 36b thermal source
40 metal material layers
42 metal materials
46 adhesion coatings
48 diamond grains
50 aluminium sheets
Embodiment
Before disclosing and describing the present invention, should be understood that the present invention is in no way limited in disclosed specific structure, manufacture method step or material afterwards, but can expand equipollent to by the technical staff understood in those association areas.Also will be appreciated that, only be used to narrate certain embodiments, but not intention causes restriction at this employed buzz word.
Unless must be noted that specific other connotations of pointing out in the article, to reach " being somebody's turn to do " be to have comprised plural usage to employed article " " in specification and claims.Therefore, for example, " diamond grains " comprised one or more such particles, and " material in a tool slit " comprised one or more such materials, and " this particle " comprised one or more these such particles.
Definition
When description and request are of the present invention, can use following buzz word according to the definition of following proposition.
Employed in the literary composition " particle (particle) " and " coarse grain (the grit) " word of etc.ing can be used alternatingly, and in the literary composition when these words and diamond grains binding, are meant the particulate kenel of diamond.These particles or particle can have different shapes, for example circular, oval, square and idiomorphism (Euhedral) or the like.In a particular aspects, " particle " can comprise or be made up of the glomerocryst diamond of Any shape basically, for example cuboidal glomerocryst diamond.As known " mesh (the Mesh) " speech of the technical field of the invention, be meant the hole number of per unit area, for example U.S. rule mesh (U.S.Meshes).Unless specialize, otherwise the size of mesh of being mentioned in the literary composition all is meant U.S. rule size of mesh.In addition,, and in fact can in size range by a small margin, change, so size of mesh is understood that the average size of mesh of a cluster particle usually because each particle is all in one specific " size of mesh ",
Employed in the literary composition " haply " speech is meant the complete of an effect, feature, character, state, structure, article or result or is close to scope or degree completely.For example, an object " haply " is coated, and it means and is fully coated, and is perhaps almost entirely coated.Its definitely can with definitely compare the extent of deviation that is allowed fully, can in some example, depend on the specification certain content.Yet generally speaking, resulting result will be as in whole results absolute and that thoroughly obtain fully the time near fully the time.Fully lack an effect, feature, character, state, structure, article or as a result the time when " haply " is used in to describe fully or be close to, this occupation mode also is a mode and using comparably as described above.For example, the constituent of one " not comprising haply " particle is to lack particle fully, or is close to and lacks particle fully and arrive the degree that lacks particle as it fully.In other words, as long as the suffered influence of compound of one " not comprising haply " raw material or element can't be measured, this compound in fact still can comprise these raw materials or element.
Employed in the literary composition " soaking plate " speech is meant that one can shift the material or the joint product of the heat of taking away a thermal source with the diffusion or the mode of conduction heat.Soaking plate is different from heat sink, and heat sink is as a heat vessel, up to another mechanism the heat on heat sink is shifted and leave, and soaking plate does not store the heat of specified quantitative, only the heat transfer of a thermal source is left.
Employed in the literary composition " thermal source " speech is meant that one has specified quantitative heat energy or hot device or the object that is higher than expection.Thermal source can comprise a device, can produce the device that hotwork is a byproduct during this running; And thermal source can comprise an object, and this object is connected to a hot translator, and is heated to the temperature that surpasss the expectation by hot translator from the heat that another thermal source shifts.
Employed in the literary composition " chemical bond " and words such as " chemical bonded refractories ", it can be used alternatingly mutually, and is meant that one applies the molecular link of an attraction between two atoms, and this attraction is by force to being enough to create a binary hypostazation compound that is positioned at interface place between atom.
Employed in the literary composition " infiltration (infiltrating) " speech is meant that a material is heated to that its temperature reaches fusing point and then as the state that flows through the hole between the particle as the liquid.
Employed in the literary composition " sintering " speech is meant that two or more individual particles form a continuous solid-state block.The program of sintering relates to and particle is fixed as one and eliminates hole between the particle at least in part.Generally speaking the sintering diamond grains needs superhigh pressure and adds carbon solvent with as the sintering adminicle.
Employed in the literary composition " fixed (Cementing) " and words such as " by fixed (Cemented) " are meant a kind of non-sintering state, wherein are fixed together to the Material Physics that coated on every side of particle, and the material of this coating can be metal material.Should be meant metal and nonmetal (Metalloids) by " metal " speech.Metal can be included in the compound that is generally considered to be metal, alkali metal and the alkaline-earth metal that can find in the transition metal.The example of metal comprises: silver, gold, copper, aluminium and iron.Nonmetal particularly including silicon, boron, germanium, antimony, arsenic and tellurium.Metal material also comprises alloy or includes the mixture of metal material.Aforementioned alloy and mixture can further comprise additive.In the present invention, carbide former and carbon wetting agent can comprise alloy or mixture, but are not only to be metal ingredient.The example of carbide former comprises scandium, yttrium, titanium, zirconium, hafnium, vanadium, niobium, chromium, molybdenum, manganese, tantalum, tungsten and technetium.
Employed in the literary composition " grade " speech is meant the grade of diamond grains.Higher level represents that diamond has less flaw and inclusion.Because the factor of fabrication schedule, rhinestone is compared rough diamond more may comprise inclusion.Flaw that diamond is contained and inclusion are few more, and then its thermal conductivity is good more, and more can be utilized by the present invention.In addition, has the diamond of flaw and inclusion in some easier damage down of creating conditions.The diamond that selection has higher level is meant the diamond grains of painstakingly selecting to have better quality, and so-called quality is meant size, price and/or shape.On behalf of it, the diamond of higher level compare good last more at least one more than the grade of the minimum diamond that gets quality, and represents it to go up more than one more than the grade well usually.When being of a size of benchmark with identical diamond grains, the increase of its price is represented in the increase of diamond grains grade usually.High-grade or more high-grade diamond grains includes the MBS-960 diamond product of Diamond Innovations company, the SDB1100 diamond product of Element Six company and the ISD1700 diamond product of Iljin Diamond company.
Employed multicomponent in the literary composition can be listed in the general inventory to promote convenience.Yet, must respectively the each several part in these inventories individually be regarded as separating and unique part.Therefore, should be only only because the many parts in the same group do not have opposite characteristic in the inventory, just with in the inventory wherein an independent sector be interpreted as with same inventory in any other part identical in fact.
Concentration, quantity, particle size, volume and other numerical datas can a range format be expressed or are presented.Will be appreciated that, this range format is just to conveniently with succinctly using, therefore this range format should flexibly be interpreted as not only comprising by clear and have been described to make the numerical value of scope restriction, also be included in all independent numerical value and subranges in this scope, just as clearly quoting from each independent numerical value and subrange.
For example, the number range of " about 1 to about 5 " should be interpreted as not only comprising know and the number range of describing also should further be interpreted as being included in independent numerical value and subrange in this number range.Therefore, comprise in this number range, comprise such as 1-3,2-4 and 3-5 and 1,2,3, subranges such as 4 and 5 such as independent numerical value such as 2,3 and 4.This identical rule is applicable to only quotes from single numerical value as the lower limit or the scope of the upper limit.In addition, this interpretive mode is applicable to scope and any described characteristic of any amplitude.
The present invention
One soaking plate with single layer structure of being made up of diamond grains can provide economy and the efficient mechanism on the heat management.Among this soaking plate, these many diamond grains that are configured in the single layer structure with single particle thickness are quite easy and practical soaking plate designs, and when this soaking plate design was connected with a thermal source, the utmost point had heat management efficient.This diamond grains can be fixed among the aforementioned single layer structure by a metal blocks, and wherein this metal blocks is solidified as one jointly with particle.Among these embodiment, the part of this metal blocks outside this single layer structure do not have other diamond grains haply.In addition, the diamond grains electrodepositable has an electrodeposited coating, and this electrodeposited coating is be selected from titanium, chromium, nickel, copper, tungsten, vanadium, niobium, zirconium, molybdenum or its alloy wherein a kind of, thus, can increase the bond intensity between diamond grains and the metal blocks.In addition, this diamond grains handles by heat treatment, electricity slurry and wherein a kind of handling procedure of chemical solvent processing carries out surfaction, strengthens the bond strength between diamond grains and the metal blocks thus.
According to the embodiment that presents in the literary composition, the invention provides the detail content of the manufacture method that is applicable to various soaking plate, heat management system, soaking plate and thermal transfer method of thermal source or the like.Therefore, related and support other related embodiment in the literary composition in the literary composition for the discussion of a specific embodiment.
In an embodiment of the present invention, metal blocks is with the single metal material manufacturing.Known metal one speech is to comprise metal and nonmetal (for example silicon, boron, germanium, antimony, arsenic and tellurium); In an other embodiment, this metal blocks is the metal material that has more than more than one.When metal blocks comprised more than more than one material, these metal materials presented with any structure, for example alloy, mixture, the sandwich construction that is separated or other spatial configuration or the like.Among a specific embodiment, this soaking plate includes aluminium.Among another embodiment, this metal blocks comprises silicon.Among another embodiment, this metal blocks can comprise aluminium and silicon, for example comprises both alloy and/or mixtures.Should according to consider especially select desire to be used in material in the metal blocks.By the application desiring to reach, decide and select to have more the metal material of electrical insulating property or the metal material that selection has more conductivity.About select considering of material also comprise ductility, price, with the thermal source of institute's desire use, manufacture method between the lateral reactivity that exists and and employed other materials (sticker that comprises any kenel) between compatibility.
In order to increase the pyroconductivity of this soaking plate, must use the diamond of higher level.If diamond contains the inclusion or the defective of other kenels, then the pyroconductivity of diamond coarse grain may not necessarily be higher than metal materials such as copper.Diamond grains with better quality is compared the diamond grains with poor quality and can be transmitted heat faster.Therefore, the diamond grains of use higher level can increase the overall thermal conductivity of soaking plate.Diamond with regular shape also can increase the pyroconductivity of soaking plate.Therefore, some design and produce the diamond that comprises regular shape can conform with the institute ask.Diamond grains can be configured to promote heat conduction and heat transfer.In order to promote heat conduction and heat transfer, a diamond grains directly physical property contacts another diamond grains.This kind directly physical property contact is the contact of diamond to diamond.In one embodiment, all diamond grains haply in one deck structure can be the contact of diamond to diamond.Therefore, in the soaking plate all haply diamond grains directly physical property contact at least one other diamond grains.In another embodiment, all haply diamonds can contact one or more diamond grains, and the degree of its contact reaches formation one continuous bort subpath and circulated with heat supply.In other words, the body or the constituent of the diamond grains that is provided is provided in fact for all diamond grains.In another embodiment, diamond grains can be disposed or arranges is an X-Y scheme.In an example, diamond grains can be haply each other separately equidistantly.Among another embodiment, the diamond grains of being arranged can be diamond diamond is contacted.This diamond grains can be configured to has identical or similar direction, can further strengthen the foregoing description by this kind configuration, and therefore promotes pyroconductivity.Among this embodiment, can arrange diamond grains the slit between diamond grains is reduced to minimum.For example, all haply diamond grains can expose a surface on this soaking plate.Perhaps, this diamond grains can have a plane, this plane of all aliging, each surface of wherein all diamond grains.When diamond grains had same size, each diamond grains can two planes of its surface in alignment, the end face and the bottom surface of this single diamond layer that for example aligns.Among some embodiment, this single diamond layer structure can partly be exposed to outside the soaking plate, perhaps can be coated by a non-diamond material haply, for example coated by metal blocks, perhaps can be coated, for example be coated by the constituent of metal blocks and glomerocryst diamond by a metal blocks and material with carbon element constituent.According to material cost, processing cost and expect and can limit the soaking plate of using the size of the single layer structure of forming by diamond grains and promote benefit less than the size of this soaking plate.For example, diamond grains can be formed in the single layer structure and near a surface of soaking plate, but and not exclusively extends to this heat sink edge.
Size also can influence the ability of diamond grains transmission heat.Bigger diamond grains has preferable usefulness than less diamond grains.Similarly, the diamond grains of size uniformity can increase the heat transfer potential of the single layer structure of being made up of diamond grains.In itself, the size of one embodiment of the invention expection diamond grains is a uniformity.Though the size of diamond grains can be virtually any size, among one embodiment of the invention, the size of mesh scope of diamond grains from about 10 to about 100.Among another embodiment, the size of mesh of diamond grains can be from about 20 to about 100, and can be from about 30 to about 50; In some aspects, can use size of mesh specially is 30/40 diamond grains; On the other hand, can use size of mesh specially is 40/50 diamond grains.Among a specific embodiment, can use more coarse diamond grains, for example those are greater than 60 meshes or greater than the diamond grains of 80 meshes.
Though the present invention expects that this single layer structure of being made up of diamond grains can be positioned at the center of metal blocks, in wherein a kind of structure, being somebody's turn to do the single layer structure of being made up of diamond grains can be than the side near this metal blocks.This design can for the diamond grains layer close metal blocks one side be set near this thermal source.Therefore, compare zone near the zone of a thermal source on this soaking plate, can have higher heat conductivity away from this thermal source.
Among an other embodiment, should can be consolidated at least one side of this metal blocks by the single layer structure that diamond grains is formed.Therefore, the single layer structure that should be made up of diamond grains can be fixed on jointly by this metal blocks among this soaking plate, but but at least a portion be exposed to outside the surface thereof.Among this embodiment, thin layer that can a non-diamond material or the film edge is affixed on the diamond grains.This non-diamond material can be has preferable heat diffusivity, so that can assist the conduction of heat of even hot device.In addition, the material of these edge subsides can be used for grabbing this soaking plate attached or being fixed on the thermal source.On the one hand, a thin metal layer for example has the thin metal layer of from 50 to 200 nano thickness approximately, by this soaking plate being fixed to a thermal source and isolating thermal source and diamond grains with minimum metal material, can help this soaking plate closely to contact this thermal source.The melt metal layer, for example aluminium and/or silicon, but infiltration and the fixed single layer structure of being fixed by organic sticker at first of forming by diamond grains.Then this organic sticker is burnt till carbon to form the edge paste layer that a carbon constitutes.In addition, another example that is coated on the material with carbon element on the diamond grains exposed surface is that class is bored carbon.This type of bores carbon and can be coated on this diamond grains and form a relative thin layer, for example the thickness of from 400 to 700 nanometers approximately.Class is bored the pyroconductivity that carbon can have a high relatively pyroconductivity thereby can strengthen soaking plate integral body.
On the one hand, this metal blocks can comprise basically by aluminium, silicon, copper, gold, silver with and alloy or mixture formed.In a detailed aspect, this metal blocks can comprise aluminium or silicon.Aspect further, this metal blocks can be made up of aluminium basically.On the other hand, this metal blocks can be made up of silicon basically.In addition, this metal blocks can only be used the compound of almag or use almag and other materials.
Aspect further, when metal derby comprised or is made up of aluminium basically, the aluminium of a part can carry out anodization.Can on one of aluminium or a plurality of surface, carry out anodization.Among an embodiment, the soaking plate by the fixed diamond grains layer of aluminium can have a plate surface.The single layer structure of being made up of diamond grains can parallelly be somebody's turn to do in this anodization surface, also can further be positioned at this soaking plate and desire on the part of a relative thermal source.Among a specific embodiment, this anodized surface can be arranged between this diamond grains layer and the thermal source.One more among the certain embodiments, this anodization surface can be placed in direct physical ground and contact with thermal source, and what is more, but this anodization surface physical property is added and/or chemical is attached to this thermal source.
Higher diamond grains density can be promoted the ability of this soaking plate transmission heat in this single layer structure.When this single layer structure is when having single diamond grains thickness, to compare other use diamond grains among soaking plate conventional method, can greatly promote charging efficiency.The quality of charging efficiency is the manufacturing situation (for example employed material, temperature, time and pressure) that partly relies on soaking plate.Among an embodiment, this charging efficiency can be higher than about 50%.Among another embodiment, it is about 80% that this charging efficiency can be higher than, and even can be higher than 90%.Among another embodiment, this charging efficiency can be higher than about 95%.Among the low pressure infiltration of diamond grains (general infiltration uses low pressure), this charging efficiency can be from about 50 to about 70% or higher.Can be by selecting bigger diamond grains and having the size of uniformity and the diamond grains of profile is promoted charging efficiency.
In another embodiment, use diamond grains can increase charging efficiency with uniformity profile.Especially, though also can use the diamond grains of other shape, it is commercial the most normal obtainable being cubical diamond grains haply.This cube diamond can edge-to-edge's mode be filled in the single layer structure.If diamond grains all towards towards same direction but not randomly towards any direction, then can be promoted the thermal property of last compound.
In one of them factor that design will be considered during soaking plate of the present invention is the thermal characteristics of interface between the thermal property of interface between the diamond grains and metal material and the diamond grains.In other words hole between the interface typically refers to contact heat resistance as the barrier of heat.Ideally, in the whole single layer structure, the side of diamond grains can with certain the contacting in the side of other diamond grains.
Among some embodiment, being somebody's turn to do the single layer structure of being made up of diamond grains can be fixed by metal derby institute.In some aspects, can reach aforesaid fixed program by carry out infiltration with metal material.Can according to be used for carrying out the metal material of infiltration kind decide suitable infiltrating temperature.Though can under various different temperatures, carry out infiltration, among an embodiment, can under the temperature that is less than about 1000 degree Celsius, carry out infiltration.The pressure of infiltration also can change.Aforementioned pressure can be the low pressure of a relative system pressure.The example of this low pressure can be and is lower than about 100 atmospheric pressure, is lower than about 50 atmospheric pressure, is lower than about 10 atmospheric pressure and is lower than about 5 atmospheric pressure.Among an embodiment, can in vacuum plant, carry out infiltration.Except aforementioned infiltration program, also can the discharge plasma sintering method in the single layer structure of forming by diamond grains (this sintering manufacture method is to carry out under the temperature that are lower than 1200 degree approximately Celsius for Spark PlasmaSintering, SPS) sintered metal materials.Also can be via hot pressing program (Hot pressing), controlled pressure be 100MPa to 5.5GPa, temperature be Celsius 700 spend to 1100 the degree, can effectively make diamond grains and metal matrix in conjunction with fixed.
The heat that the present invention comprises a thermal source shifts device, system and the method for leaving.On the one hand, a heat management system can comprise a soaking plate.This heat management system can comprise the thermal source of a contact soaking plate.This soaking plate can have two opposite sides.A side of close this thermal source can be compared opposite side and has lower thermal coefficient of expansion and higher pyroconductivity.Single fixed diamond grains layer in this soaking plate can influence characteristics such as this thermal coefficient of expansion and pyroconductivity.Especially, to have a side of this diamond grains layer be to have low-thermal-expansion rate and high thermoconductivity to this soaking plate.
(Polycrystalline Diamond, PCD) layer can make near the thermal property of the diamond layer of soaking plate one side more outstanding by increasing by a glomerocryst diamond.This glomerocryst diamond layer can be attached on this soaking plate, and can be arranged between this soaking plate and the thermal source.In addition, among some embodiment, a glomerocryst diamond layer can directly contact the single layer structure that this is made up of diamond grains.For example, be exposed in the lip-deep example of this soaking plate at the diamond grains layer of soaking plate, can be on this diamond grains layer a directly additional glomerocryst diamond layer.
The soaking plate of manufacturing of the present invention can have different structures according to different uses.Above-mentioned soaking plate can be polished and can be based on the demand of applied thermal source and work out profile.With respect to the soaking plate with the manufacturing of chemical gaseous phase program, soaking plate of the present invention can form almost virtually any size relatively apace.The most normal soaking plate of making in electronic application, its thickness will arrive about 1 millimeter from about 0.1 millimeter.On the one hand, this soaking plate thickness can be about 1.1 of diamond layer thickness and arrives about 30 times.This soaking plate can form circular or an oval dish shape or a quadrangle, for example square, rectangle with or the thin slice of other shapes.The advantage of this design is in the design tightness degree preferably to be arranged.In addition, soaking plate of the present invention can form great size, so that can cover a large amount of areas, also can form complicated shape, depends on that institute desires the application of correspondence.This thermal source also can be any electrical type or element of other classes (for example central processing unit (CPU)) that can produce heat.
In case the formation soaking plate is then based on designing the position that soaking plate is set with the heat transfer principle.This soaking plate can be directly tight contact element, and even can form the coating thermal source, or the soaking plate profile can be molded into large tracts of land direct contact heat source.Perhaps, this soaking plate can be by a heat pipe or the connection of other heat removal devices and is separated from each other with thermal source.
Except the soaking plate described in the literary composition, the present invention also comprises a cooling unit to be used for that a thermal source is left in the heat transfer.Shown in Figure 1A, according to the formed soaking plate 12 of the principle of being discussed in the literary composition, it can be arranged at and a thermal source thermo-contact, and this thermal source can be a central processing unit 14 and one heat sink 16.This soaking plate arrives the heat transfer that central processing unit produced heat sink.Material that this is heat sink and structure can be the technical field of the invention various materials known to the skilled and structure.For example, aluminium and copper are known heat sink material, and shown in Figure 1A, heat sink several pieces radiating fins 18 that comprises.When the heat of coming to shift fast and effectively central processing unit by soaking plate, the heat sink heat that absorbs, and radiating fin helps heat dissipation among surrounding environment.Can adopt the contact structures between various heat sink, thermal source and the soaking plate according to the particular result that will reach.For example, elements such as above-mentioned soaking plate can be configured to adjacent one another are, also can mutually combine or be coupled.In many cases, it is useful soaking plate being attached on this thermal source.Can hard solder, mode or any other chemistry such as welding (Soldering), chemical bond, gummed or mechanical attachment device carries out aforementioned appendage.The hard solder method can be compared other additional materials preferable heat conduction efficiency, and therefore can increase the efficient of soaking plate.
Though this is heat sink 16 to have several pieces radiating fins as shown in the figure, should understand the present invention and can utilize any technical field that the present invention belongs to known to the skilled heat sink.Known heat sink example existingly in No. 892 patent cases is discussed by the U.S. the 6th, 538, and this patent case is integrated in herein with as a reference.In one aspect of the present invention, this is heat sink to comprise a heat pipe, and this heat pipe has an internal work fluid.The U.S. the 6th, 517, the existing hot pipe heat sink example of discussing in No. 221 patent cases, this patent case is integrated in herein with as a reference.
Shown in Figure 1B, in one aspect of the present invention, this soaking plate 12 can be at least a portion be embedded in this heat sink and or this thermal source among.In this way, heat can be transferred to by soaking plate bottom not only that this is heat sink, also hot at least a portion can be transferred to by the soaking plate side that this is heat sink.Embed heat sink after, this soaking plate can oppress close-fitting method (Compression Fit) be fixed on heat sink among.In this way, do not need bond material or hard solder material be present in soaking plate and heat sink between, in conjunction with or the hard solder material can be as hindering from soaking plate to heat sink heat transfer as the barrier.
Though soaking plate can the technical field of the invention person be fixed on various mechanism heat sink, on the one hand this soaking plate with thermal induction compression method (Thermally Induced CompressionFit) be fixed on this heat sink among.Among this embodiment, this is heat sink to be heated to expand a opening on heat sink of a temperature.This soaking plate can then be installed on the opening of this expansion, and heat sinkly then cools off.After to heat sink the cooling with high relatively thermal coefficient of expansion, heat sink meeting round soaking plate shrink and induce compression with soaking plate is embedded be fixed on heat sink among and need not any marginal bond material.Also can use the mechanical friction method with soaking plate be fixed on heat sink among.
Shown in Fig. 1 C, in one aspect of the invention, this is heat sink to comprise a heat pipe 22, and this heat pipe 22 has an internal work fluid (not shown).This internal work fluid can be the technical field of the invention any internal work fluid known to the skilled, and it is water or steam on the one hand.This heat pipe can be that sealing state is to be maintained at inside heat pipe with this working fluid haply.This soaking plate can be set near heat pipe, but and on the one hand this soaking plate hard solder to this heat pipe.In the embodiment of Fig. 1 C, this soaking plate runs through the outer wall of heat pipe so that the soaking plate bottom directly contacts this working fluid, shown in hard solder place 26, can assist the air-tight state of keeping heat pipe thus.
When this soaking plate is when directly contacting this working fluid, working fluid can shift heat more efficiently leave soaking plate.In the embodiment shown in Fig. 1 C, this working fluid (present embodiment is water, and is not shown in the figures) contact soaking plate, and when absorption came from soaking plate hot, working fluid evaporated.Steam is followed the formation liquid that condenses bottom heat pipe, after this, because capillarity, this liquid can reflux 24 in the heat pipe outer wall place that is connected soaking plate, and the fluid that proceeds with one's work can evaporate and circulation repeatedly once again.Because the outer wall of heat pipe is having the material manufacturing of high heat-conduction coefficient, so heat can be spilt among the surrounding air by heat pipe outer wall.
Because previous use, size, material, cost and other are considered, its class that can this metal blocks be provided with benefit is bored carbon.The kenel that class is bored carbon can be a single layer structure and with physical property and/or chemical ground append mode to a side or many sides or surface of this metal blocks.Than the surface of this metal blocks, such bores carbon can will come from the hot divergence of soaking plate in air more efficiently.Therefore, use at least one class brill carbon-coating to be particularly useful for and lack heat sink structure.Among an embodiment, should can be positioned at close this thermal source place on this metal blocks by the single layer structure that diamond grains is formed, and class brill carbon-coating can be positioned at relative this thermal source place on this metal blocks.In this structure, heat energy can flow through diamond grains (may pass through the metal blocks of a specified quantitative by going ahead of the rest before the diamond grains) by the thermal source place, by the part of metal blocks, and then bore carbon-coating place's loss by class and go among the surrounding environment, for example loss is gone among the air.May provide more benefit to the heat sink structure of tool not though use class to bore carbon, class is bored carbon-coating and still can be used in and have heat sink embodiment.Class bores that carbon-coating also can be arranged on the metal blocks and between this thermal source and the single layer structure be made up of diamond grains.
According to the present invention, a soaking plate manufacture method can comprise many diamond grains are configured to a single layer structure, and this single layer structure has the thickness of single diamond grains.This single layer structure has the thickness of a diamond grains.In this single layer structure, diamond grains is so that the mode of stacking disposes up and down, or even two less diamond grains stack mutually and whole stacking highly equals one during by the height of the single layer structure of being formed than the bitellos particle, and this single layer structure with stacking type diamond grains still is considered as individual layer but not multilayer.This single layer structure is coated by a metal blocks.The diamond grains in single layer structure, this metal blocks can not comprise diamond grains haply.
Fig. 2 shows one embodiment of the invention, wherein these soaking plate 30 these thermals source 36 of contact.Thermal source 36 shown in the figure has a flat surfaces and can be more easily does thermo-contact with a smooth haply soaking plate.As shown in the figure, this soaking plate 30 comprises a single layer structure of being made up of diamond grains 32.The single layer structure that should be made up of diamond grains is coated by a metal blocks 34, and this metal blocks act as fixed diamond grains.
Please refer to Fig. 7, in order to increase the charging efficiency of diamond grains 32d, diamond grains 32d can be the prismatic crystal diamond of cubic type, as shown in Figure 7.
Similarly, one changes heat and shifts the method for leaving from a thermal source and can comprise: the heat energy of a thermal source is drawn among the soaking plate the wherein mutual thermo-contact of this thermal source and soaking plate.More specifically, heat energy can be drawn among the diamond layer of a soaking plate, and then is transmitted in the metal blocks.In addition, can append on the heat sink or heat pipe heat sink.But this appendage heat supply can be transferred on this heat sink or heat pipe by this soaking plate (for example part of metal blocks).
Can use filling technique to promote charging efficiency and the heat transfer characteristic of the single layer structure formed by diamond grains.This technology generally can comprise mechanical arrangements and/or disturbance (Agitation, for example vibrations).Shown in following example, can form a block with free diamond grains by the sticking one deck diamond grains of getting of a viscous layer or adhesion coating or film, form a single layer structure of forming by diamond grains thus.Can remove viscous layer to finish a single layer structure of forming by diamond grains from this block subsequently.
The single layer structure that should be made up of diamond grains is coated by a metal blocks.This coating program can comprise a sealant (Interstitial Material) is arranged between at least a portion diamond grains.This sealant can be imported among other manufacture methods, and infiltration and then carries out electro-deposition among the layer structure of being made up of diamond grains.Can among the aqueous solution sealant (for example silver, copper and nickel) imported among the diamond grains layer by the electro-deposition program.In this program, between plated metal and diamond, do not produce any chemical bonded refractory haply.The aforementioned metal that provides is placed among the acid solution usually, and can be the technical field of the invention technical staff use.Also can add many elements to reduce the surface tension of solution, perhaps increase the permeability of solution for hole.
About infiltration, should consider how undue influence diamond grains of this manufacture method, it is more firm that configuration of the present invention makes diamond compare the structure of other soaking plate.Because the configuration of simple layer structure, the infiltration diamond grains only needs a little time in the manufacture method condition, and therefore having reduced diamond grains is exposed to the time with potential nocuous condition.In addition, use integral body to have the diamond grains of higher quality to mean that diamond grains more can not damaged by this invasive manufacture method, so especially more reverse transformation can not take place yet.Another consideration is carefully to select for use sealant to avoid infiltrating temperature or sintering temperature too high and damage diamond.Therefore, in one aspect of the present invention, this sealant can be one can be lower than the 1100 following fusion of degree or the alloys of sintering approximately Celsius.When being higher than this temperature, should shorten this manufacture method time to avoid excessively damaging diamond grains.Metallic inclusions in the diamond grains can produce slight crack from its inside, and causes the diamond grains damage.Rhinestone can comprise a metallic catalyst (for example iron, cobalt, nickel or its alloy) mostly with as inclusion.These metallic inclusions have high thermal expansion coefficient, and it can allow the diamond grains anti-phase become graphitic carbon again.Therefore, at high temperature, diamond can produce the crack because of the different heat expansion rate of metallic inclusions, perhaps becomes carbon again by the diamond anti-phase.Yet, can be by under high pressure in the stability region of diamond, diamond being carried out the problem that infiltration is eliminated reverse transformation haply, for example under high pressure greater than about 5,000,000,000 handkerchiefs (5GPa).
For the quality decline degree of diamond being reduced to minimum, would rather be under being lower than 1100 degree Celsius or under high pressure carry out infiltration in the stability region of diamond.Most of alloys of some alloy of above-mentioned iron, nickel and cobalt and copper, aluminium and silver can fusion in this scope.During the infiltration of a sealant, thermometal inevitably can cause a little decline of diamond quality.Yet time that can be by reducing infiltration and the careful mode such as sealant of selecting minimize the problem that quality descends.
Though diamond may be damaged or anti-phase becomes carbon again under high-temperature and high-pressure conditions, in one embodiment, carry out infiltration can be less than under the temperature of 1000 degree approximately Celsius one.Similarly, can under vacuum or reduction (Reducing) condition, carry out infiltration.Use a vacuum atmosphere or reducing atmosphere, for example hydrogen also can be avoided the oxidation of molten metal material.Oxidation also can reduce the pyroconductivity of a metal material, and therefore oxidation is unfavorable soaking plate.On the one hand, the single layer structure that should be made up of diamond grains can be formed on a metal base or the film, and then can go in the diamond grains by a metal material infiltration.This infiltration can be in conjunction with this metal base or film, thereby forms a solid-state soaking plate.This metal base and metallic infiltration material can be identical or dissimilar material.Previous example as shown in Figure 3.Two metal material layers that separate 38,40 coat this single layer structure of being made up of diamond grains 32a.This soaking plate 30a thermo-contact is in a thermal source 36a.Especially, this metal material layer 40 is in contact with one another with thermal source 36a.Embodiment as shown in Figure 3, diamond grains are given by a metal material wherein haply and coat.Perhaps, diamond grains can be coated more than more than one metal material.In addition, Fig. 3 has shown foregoing diamond grains with different size.This single layer structure is the thickness with a diamond grains, and this structure is different from the diamond composite bed that stacks out whole thickness with a plurality of diamond grains.
Fig. 4 shows a soaking plate 30b, and it has a diamond grains layer 32b who shortens.This diamond grains layer 32b do not extend to the length of whole soaking plate fully.Otherwise its upper dimension bound is built in the size of approximate thermal source 36b.Because the diamond grains cost in the soaking plate is more and more expensive, aforementioned structure is very economic way.This embodiment comprises metal material 42, and it makes soaking plate extend to block.This metal material 42 can be identical with the metal material 34b that coats the diamond grains layer, also can be different fully.
On the one hand, can make a soaking plate, it comprises a single layer structure of being made up of diamond grains, and wherein the single layer structure that should be made up of diamond grains is the surface along soaking plate.This diamond grains can be fixed, and this soaking plate comprises a metal material, therefore created soaking plate by the pyroconductivity difference of a side (diamond grains layer) to another opposite side (metal material).At diamond surface or the most advanced and sophisticated surface that exposes can contact a thermal source.In addition, can on this single layer structure of forming by diamond grains, add a glomerocryst diamond layer.
Aforementioned content has presented soaking plate of the present invention, heat management system, soaking plate manufacture method and soaking plate using method.Tradition uses the soaking plate of diamond to compare the present invention, and comparatively costliness and efficient are relatively poor.Very consuming time and expend cost with the diamond film of chemical vapour deposition technique manufacturing or diamond layer.Perhaps, some soaking plate that contains diamond is to adopt diamond grains.Yet these diamond grains are that the mode with compound presents, and use a large amount of diamond grains to be distributed among this compound.Previous designs is to increase pyroconductivity with the volume capacity that increases.Certainly, when using a large amount of diamonds, be to adopt the diamond of lower grade to reduce whole cost.In addition, among an embodiment, this diamond grains layer is strategically to use the position that needs most it, promptly is the position of hottest point on the thermal source.Use is limited the quantity of strategically, and the diamond of the higher quality of placement finally can reduce the cost of soaking plate widely and allow soaking plate can have identical or higher transfer of heat energy ability.
In addition, the soaking plate of being mentioned herein can be compared previous design and has higher charging efficiency and easier manufacturing.Intuitively, fill diamond grains in the single layer structure mode and compare more easy with three dimensional form configuration diamond grains.Diamond grains fill to be arrived three minutes of three-D volumes two are things of difficulty very.Otherwise this single layer structure design can adopt different particle modes to fill even adopt different particle directions, can increase the pyroconductivity of soaking plate thus.Fixed and the manufacture method of this list diamond layer needs the less infiltration time, and can carry out efficient infiltration under low temperature and/or low pressure, and therefore comparing the compound soaking plate of conventional diamond more can not damage diamond grains in manufacture method.Owing to can in manufacture method, not damage or damage diamond grains, therefore can not reduce the pyroconductivity of diamond grains, it is common occurrence that classical production process diamond grains pyroconductivity is descended.
Another advantage of the design is can make preferable hot link is arranged between soaking plate and the thermal source.Among the embodiment with the more close thermal source of diamond layer, the thermal coefficient of expansion of soaking plate is suitable for through special design and connects thermal source and heat sink.Its thermal coefficient of expansion is lower in the side that diamond is arranged, and promptly is that the thermal coefficient of expansion near a side of thermal source is lower, otherwise, higher near thermal coefficient of expansion heat sink or the heat pipe place.This is one can be for the long-time ideal structure that connects.When coefficient of thermal expansion does not conform to, because the expansion repeatedly that variation caused of heat and contraction can make the junction break and damage.Any between thermal source and soaking plate break or hole all can reduce the efficient of system widely.In the side that soaking plate is heat sink with one or heat pipe is connected also is to be suitable for same principle.General diamond compound is to have a uniformity or similar at least thermal coefficient of expansion in its two junction.The soaking plate that is presented in the literary composition, the gradient of bridge joint thermal coefficient of expansion efficiently, and durable and durable syndeton can be provided.
The following example presents the various soaking plate manufacture method of the present invention.These embodiment only supply explanation usefulness, but not are used to limit the present invention.
Embodiment
Embodiment one soaking plate manufacture method
Among acetone, the diamond grains by 30/40 U.S.'s size of mesh (ElementSix SDB1100) is thoroughly cleaned by ultrasonic vibrations.The native copper film of going back with one 100 micron thickness is arranged on the teel pallet.Two-sided adhesion coating with one 25 micron thickness is attached on this copper film.Diamond grains is spread to the adhesion coating end face, and with ultrasonic vibrations mode disturbance diamond grains to increase charging efficiency.Overturn this pallet to remove the diamond grains that does not adhere to this adhesion coating.In case remove lax diamond grains, this pallet then is turned to original state once more.The pure aluminum plate of one 2 millimeters thick is placed into the top of diamond grains.Aforementioned arrangements is shown in Fig. 5 A, and the copper layer that wherein has an adhesion coating 46 comprises a single layer structure of being made up of diamond grains 48, and this single layer structure is covered by an aluminium sheet 50.This pallet is placed into heating reaches 680 degree Celsius among the vacuum melting furnace.The aluminum infiltration is gone among the gap between diamond grains.This pallet is cooled off.After the cooling, the fixed diamond grains of aluminium, and firmly in conjunction with this copper film.The finished product of soaking plate such as Fig. 5 B, it is similar to Fig. 3.
Embodiment soaking plate more than two manufacture method
The continue manufacture method of embodiment one of present embodiment, but before importing diamond grains, earlier many copper sheets are put on the adhesion coating.Can adjust the generation of copper sheet configuration status and be exposed to outer adhesion coating for 20 square millimeters.
In case tray cools off, then the end face of aluminium is worn into smooth shape, with this sheet material along this center line as the copper sheet of separating usefulness carry out the line cutting (Wire Electrical DischargeMachining, Wire-EDM).Form much about 40 millimeters soaking plate by aforementioned cutting.Every soaking plate probably comprises 1600 crystal (general 4 carats (Carats), cost was on U.S. dollar 80 minutes), and each crystal is smooth firmly to be embedded on the copper film.Fig. 6 shows that present embodiment one has the exemplary plate body 52 of many soaking plate 56, and this plate body cuts as yet.Copper sheet 54 (being covered by aluminium) separates each soaking plate 56, and each soaking plate 56 has single diamond layer.
This soaking plate can be welded direct to an electronic chip and/or be welded to a heat sink or heat pipe.The pyroconductivity of this diamond layer is about 1000 watts/Mi Du (W/mK), is approximately higher than more than 2.5 times of copper pyroconductivity greatly, and so high thermoconductivity can remove the focus on the electronic chip effectively immediately.This heat is delivered in the aluminium block body by the opposite side of diamond grains, and further is transferred on the heat sink or heat pipe that is connected.
The soaking plate that embodiment three is siliceous
The present embodiment step is almost as described in the embodiment one, but is provided with the silicon of fusion in aluminium, and carries out infiltration under 1450 degree Celsius.The copper of the relative conductivity of its final products is an electrical insulator.In addition, the coefficient of thermal expansion of its compound is less than the coefficient of thermal expansion of embodiment one.
If excessive diffusion phenomena take place between infiltration thing and copper film, then can reduce pyroconductivity.In addition, therefore dissolving of this copper film.Among this example, can on this copper film, be coated with the more fire-resistant metal of one deck and become a chemical barrier thing.For example, can be on this copper film sputter one deck tungsten.The pyroconductivity of tungsten is not low, and very thin (for example counting nanometer thickness), therefore can ignore its resistance to heat.
The soaking plate that embodiment four is siliceous
To be filled to a neat single layer structure by the diamond grains of 30/40 U.S.'s size of mesh (Element Six SDB1100) with vibration mode having on the aluminium sheet of frame.Be placed with a Silicon Wafer (Wafer) at populated diamond layer end face.This pallet is placed into a vacuum furnace and is heated to 1450 degree Celsius and reach 20 minutes.Silicon fusion and fill up hole between the diamond grains.This aluminium sheet cools off.Surface of aluminum plate to cooling is ground so that it is smooth, thereby can make its easier appending on the thermal source.
Embodiment five contains the soaking device of silicon-aluminum
The present embodiment step is haply as described in the embodiment four, but Silicon Wafer replaces with silicon-aluminum.In addition, infiltration carries out under 1000 degree Celsius.
Will be appreciated that foregoing is only for explanation the application of the principles of the present invention.Under the prerequisite of category of the present invention and spirit, the technical field of the invention technical staff can make multiple modification and different configurations, and claims intention contains these modification and different configurations.Therefore, when the details that is considered to be the most practical and preferred embodiment among the present invention has at present been disclosed as above, for the technical field of the invention technical staff, can make and be not subject to the multiple change that has comprised size, material, profile, form, function, method of operation, assembling and used according to the notion that is proposed herein and principle.

Claims (36)

1. soaking plate with individual layer diamond grains, it comprises:
One coats the metal blocks of plural diamond grains, and this plural number diamond grains is configured to a single layer structure, and this single layer structure has the thickness of single particle, and this metal blocks and diamond grains are consolidated, and its inside does not have other diamond grains haply.
2. according to the described soaking plate with individual layer diamond grains of claim 1, wherein this metal blocks is a single metal material.
3. according to the described soaking plate with individual layer diamond grains of claim 1, wherein this metal blocks comprises more than one metal material.
4. according to the described soaking plate with individual layer diamond grains of claim 3, wherein this metal blocks comprises the different metal material of multilayer.
5. according to the described soaking plate with individual layer diamond grains of claim 1, wherein this metal blocks comprises a metal alloy.
6. according to the described soaking plate with individual layer diamond grains of claim 1, wherein this metal blocks comprises a composition, and this composition is be selected from aluminium, silicon, copper, gold, silver or its alloy wherein a kind of.
7. according to the described soaking plate with individual layer diamond grains of claim 6, wherein this metal blocks comprises aluminium.
8. according to the described soaking plate with individual layer diamond grains of claim 7, wherein this metal blocks comprises an almag.
9. according to the described soaking plate with individual layer diamond grains of claim 7, wherein at least a portion of this aluminium has anodization.
10. according to the described soaking plate with individual layer diamond grains of claim 6, wherein this metal blocks comprises silicon.
11. according to the described soaking plate with individual layer diamond grains of claim 6, wherein this metal blocks is made up of aluminium or silicon basically.
12. according to the described soaking plate with individual layer diamond grains of claim 6, wherein this metal blocks comprises the mixture or the alloy of aluminium and silicon.
13. according to the described soaking plate with individual layer diamond grains of claim 1, wherein this diamond grains is high-grade diamond grains.
14. according to the described soaking plate with individual layer diamond grains of claim 1, wherein this diamond grains is size or the profile that has uniformity haply.
15. according to the described soaking plate with individual layer diamond grains of claim 14, wherein this diamond grains is the prismatic crystal diamond of cubic type.
16. according to the described soaking plate of claim 1 with individual layer diamond grains, wherein in the single layer structure that should form by diamond grains with discharge plasma sintering method sintered metal materials, this sintering manufacture method is to carry out being lower than under approximately Celsius 1200 temperature of spending.
17. according to the described soaking plate with individual layer diamond grains of claim 1, wherein this diamond grains carries out surfaction by wherein a kind of handling procedure of heat treatment, the processing of electricity slurry and chemical solvent processing.
18. according to the described soaking plate with individual layer diamond grains of claim 1, wherein the size of mesh of this diamond grains is approximately from 20 to 100.
19. according to the described soaking plate with individual layer diamond grains of claim 18, wherein the size of mesh of this diamond grains is approximately from 30 to 50.
20. according to the described soaking plate with individual layer diamond grains of claim 1, wherein the single layer structure that should be made up of diamond grains is near a side of metal blocks and than another opposite side away from metal blocks.
21. according to the described soaking plate with individual layer diamond grains of claim 1, the charging efficiency that wherein is somebody's turn to do the single layer structure of being made up of diamond grains is approximately greater than 50%.
22. according to the described soaking plate with individual layer diamond grains of claim 21, the charging efficiency that wherein is somebody's turn to do the single layer structure of being made up of diamond grains is approximately greater than 80%.
23. according to the described soaking plate with individual layer diamond grains of claim 1, wherein the thickness of this soaking plate is about 1.1 to 30 times of single diamond grains thickness.
24. soaking plate according to claim 1, wherein infiltration has metal material in the single layer structure that should be made up of diamond grains.
25. according to the described soaking plate with individual layer diamond grains of claim 24, wherein this infiltration program is to carry out under the temperature that is lower than 1000 degree approximately Celsius.
26. according to the described soaking plate with individual layer diamond grains of claim 24, wherein this infiltration program is to carry out under vacuum condition.
27. according to the described soaking plate with individual layer diamond grains of claim 26, wherein this infiltration program is to carry out being lower than under the 100 atmospheric pressure.
28. according to the described soaking plate with individual layer diamond grains of claim 1, it further includes one and is attached to soaking plate one lip-deep glomerocryst diamond layer.
29. according to the described soaking plate with individual layer diamond grains of claim 1, wherein this diamond grains is through a hot pressing routine processes, the pressure of this hot pressing program is from 100MPa to 5.SGpa, and temperature is from 700 to 1000 degree Celsius.
30. according to the described soaking plate with individual layer diamond grains of claim 1, wherein this diamond grains is electroplate with an electrodeposited coating, this electrodeposited coating is be selected from titanium, chromium, nickel, copper, tungsten, vanadium, niobium, zirconium, molybdenum or its alloy wherein a kind of.
31. the method with the heat of soaking plate transfer thermal source, it comprises:
Among a thermal source is drawn to its heat energy on the diamond layer of one soaking plate, wherein this soaking plate is that thermo-contact is in this thermal source, this diamond layer is one to have the single layer structure of single diamond grains thickness, and further with heat transfer by this diamond layer and be conveyed into a metal blocks, this metal blocks coats haply and is consolidated with this diamond grains, and this metal blocks does not comprise other diamond grains haply except the diamond grains in the diamond layer.
32. shift the method for the heat of thermal source according to claim 31 is described with soaking plate, it further comprises heat energy is transferred to an extra material by this metal blocks.
33. shift the method for the heat of thermal source according to claim 32 is described with soaking plate, wherein further heat energy be transferred to a heat sink or heat pipe.
34. shift the method for the heat of thermal source according to claim 31 is described with soaking plate, wherein this soaking plate is to append on this thermal source.
35. shift the method for the heat of thermal source according to claim 34 is described with soaking plate, wherein this soaking plate hard solder or be welded on this thermal source.
36. shift the method for the heat of thermal source according to claim 31 is described with soaking plate, wherein this soaking plate comprises a metal material, this metal material is selected from the wherein a kind of of aluminium, silicon, copper, gold, silver or its alloy.
CN 201010004212 2010-01-14 2010-01-14 Soaking plate with single layer of diamond particles and correlation method thereof Pending CN102130077A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2016035796A1 (en) * 2014-09-02 2017-06-15 株式会社アライドマテリアル Heat dissipation member and method for manufacturing heat dissipation member
CN108475619A (en) * 2015-11-20 2018-08-31 Rfhic公司 The mounting technique of semiconductor-on-diamond wafer for device processing

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2016035796A1 (en) * 2014-09-02 2017-06-15 株式会社アライドマテリアル Heat dissipation member and method for manufacturing heat dissipation member
US10553519B2 (en) 2014-09-02 2020-02-04 A.L.M.T. Corp Heat radiating member and method for producing the same
CN108475619A (en) * 2015-11-20 2018-08-31 Rfhic公司 The mounting technique of semiconductor-on-diamond wafer for device processing

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