TWI394195B - Field emission pixel tube - Google Patents

Field emission pixel tube Download PDF

Info

Publication number
TWI394195B
TWI394195B TW96126538A TW96126538A TWI394195B TW I394195 B TWI394195 B TW I394195B TW 96126538 A TW96126538 A TW 96126538A TW 96126538 A TW96126538 A TW 96126538A TW I394195 B TWI394195 B TW I394195B
Authority
TW
Taiwan
Prior art keywords
field emission
emission pixel
pixel tube
disposed
anode
Prior art date
Application number
TW96126538A
Other languages
Chinese (zh)
Other versions
TW200905714A (en
Inventor
Yuan-Chao Yang
Liang Liu
Kai-Li Jiang
Shou-Shan Fan
Original Assignee
Hon Hai Prec Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hon Hai Prec Ind Co Ltd filed Critical Hon Hai Prec Ind Co Ltd
Priority to TW96126538A priority Critical patent/TWI394195B/en
Publication of TW200905714A publication Critical patent/TW200905714A/en
Application granted granted Critical
Publication of TWI394195B publication Critical patent/TWI394195B/en

Links

Landscapes

  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Discharge Lamps And Accessories Thereof (AREA)

Description

場發射像素管 Field emission pixel tube

本發明涉及一種場發射元件,尤其涉及一種場發射像素管。 The present invention relates to a field emission element, and more particularly to a field emission pixel tube.

場發射電子源以及利用該電子源轟擊螢光物質而發光之場發射發光技術已經於場發射平面顯示器領域得到應用。這種場發射技術係於真空環境下,利用外加電場作用將尖端之電子激發出來。於傳統場發射電子源中,一般採用微細尖端如鉬尖端、矽尖端作為電子發射端,隨著奈米技術之發展,還採用奈米碳管作為電子發射端。 The field emission electron source and the field emission illuminating technology that emits light by bombarding the fluorescent substance with the electron source have been applied in the field of field emission flat panel display. This field emission technique is based on a vacuum environment that uses an applied electric field to excite the electrons at the tip. In the conventional field emission electron source, a fine tip such as a molybdenum tip and a tantalum tip are generally used as an electron-emitting end. With the development of nanotechnology, a carbon nanotube is also used as an electron-emitting end.

奈米碳管線(CNT yarn)具有優良之場發射性能,於較低之陽極電壓下具有較大之發射電流,然而這一優點於場發射像素管中卻為缺點。因為場發射像素管之工作原理係電子轟擊螢光粉發光,而螢光粉之最佳工作條件為高電壓、小電流。於低電壓、大電流之條件下工作會嚴重降低螢光粉之發光效率和壽命。 The CNT yarn has excellent field emission performance and a large emission current at a lower anode voltage. However, this advantage is disadvantageous in field emission pixel tubes. Because the field emission pixel tube works by electron bombardment of fluorescent powder, the optimal working condition of the fluorescent powder is high voltage and small current. Working under conditions of low voltage and high current will seriously reduce the luminous efficiency and life of the fluorescent powder.

有鑒於此,有必要提供一種可於高電壓、小電流條件下工作之奈米碳管線場發射像素管。 In view of this, it is necessary to provide a nano-carbon pipeline field emission pixel tube that can operate under high voltage and low current conditions.

以下將以實施例說明一種可於高電壓、小電流條件下工作之奈米碳管線場發射像素管。 A nanocarbon pipeline field emission pixel tube that can operate under high voltage and low current conditions will be described below by way of example.

一種場發射像素管,其包括殼體、分別設置於殼體兩端之陽極與陰極,該 陰極包括奈米碳管線,該場發射像素管還包括屏蔽極,該屏蔽極環繞該奈米碳管線設置。 A field emission pixel tube comprising a housing, an anode and a cathode respectively disposed at two ends of the housing, The cathode includes a nanocarbon pipeline, and the field emission pixel tube further includes a shield electrode disposed around the nanocarbon pipeline.

該場發射像素管於工作時,陰極與屏蔽極上接低電位,陽極接高電位。由於屏蔽極可屏蔽陽極之高壓,其可顯著降低奈米碳管線表面之電場強度,場發射像素管之直徑越小,則這種屏蔽效應越明顯。由於奈米碳管線表面之電場強度較低,因此其發射電流降低,但其工作電壓卻很高。符合場發射像素管之理想工作條件,具有良好之發射效果與長使用壽命。 When the field emission pixel tube is in operation, the cathode and the shield electrode are connected to a low potential, and the anode is connected to a high potential. Since the shield can shield the high voltage of the anode, it can significantly reduce the electric field strength on the surface of the nanocarbon pipeline. The smaller the diameter of the field emission pixel tube, the more obvious the shielding effect. Due to the low electric field strength of the surface of the nanocarbon pipeline, its emission current is reduced, but its operating voltage is high. It meets the ideal working conditions of the field emission pixel tube and has good emission effect and long service life.

11‧‧‧陰極 11‧‧‧ cathode

12‧‧‧陽極 12‧‧‧Anode

13‧‧‧螢光層 13‧‧‧Fluorescent layer

14,24‧‧‧屏蔽極 14,24‧‧‧Shielding pole

10,20‧‧‧殼體 10,20‧‧‧shell

100‧‧‧場發射像素管 100‧‧ ‧ field emission pixel tube

102‧‧‧出光部 102‧‧‧Lighting Department

111‧‧‧支撐體 111‧‧‧Support

圖1係第一實施例之場發射像素管結構之剖面示意圖。 1 is a cross-sectional view showing the structure of a field emission pixel tube of the first embodiment.

圖2係第二實施例之場發射像素管結構之剖面示意圖。 2 is a cross-sectional view showing the structure of a field emission pixel tube of the second embodiment.

參閱圖1,第一實施例之場發射像素管100包括殼體10、陰極11、陽極12、螢光層13及屏蔽極14。 Referring to FIG. 1, the field emission pixel tube 100 of the first embodiment includes a housing 10, a cathode 11, an anode 12, a phosphor layer 13, and a shield electrode 14.

殼體10具有一出光部102。殼體10由絕緣材料如石英、玻璃、陶瓷、塑膠等製成。其可為中空之圓柱體、長方體、立方體、多棱柱體等。出光部102之光出射面可為平面也可為對光線具發散或會聚作用之曲面。殼體10內被抽成真空狀態。優選地,為使殼體10內之真空度得以保持,可於殼體10內添加吸氣劑(圖未示),如蒸散型吸氣劑金屬膜。吸氣劑可採用蒸鍍之方式於殼體密封前形成於殼體10之內壁上。 The housing 10 has a light exit portion 102. The housing 10 is made of an insulating material such as quartz, glass, ceramic, plastic, or the like. It may be a hollow cylinder, a rectangular parallelepiped, a cube, a polygonal prism, or the like. The light exit surface of the light exiting portion 102 may be a flat surface or a curved surface that diverges or converges on the light. The inside of the casing 10 is evacuated. Preferably, in order to maintain the degree of vacuum in the casing 10, a getter (not shown), such as an evapotranspiration getter metal film, may be added to the casing 10. The getter may be formed on the inner wall of the casing 10 by vapor deposition before the casing is sealed.

陰極11與陽極12位於殼體10內,並相對設置於殼體10之兩端。其中陽極設置於靠近殼體10出光部102之一端。陰極11包括支撐體111及設置於支撐體111上之奈米碳管線112,支撐體111一端位於殼體10內,另一端延伸至殼體10外,用於連接電源(圖未示)。奈米碳管線112設置於支撐體111位於 殼體內之一端上。支撐體112為導電材料,支撐體111為奈米碳管線112提供支撐並將奈米碳管線112電連接到電源上。 The cathode 11 and the anode 12 are located in the casing 10 and are oppositely disposed at opposite ends of the casing 10. The anode is disposed adjacent to one end of the light exit portion 102 of the housing 10. The cathode 11 includes a support body 111 and a nano carbon line 112 disposed on the support body 111. The support body 111 has one end located inside the housing 10 and the other end extending outside the housing 10 for connecting a power source (not shown). The nano carbon line 112 is disposed on the support body 111 On one end of the housing. The support body 112 is a conductive material, and the support body 111 provides support for the nanocarbon line 112 and electrically connects the nanocarbon line 112 to the power source.

奈米碳管線112可包括多根相互之間基本平行之奈米碳管,奈米碳管可為單壁奈米碳管或多壁奈米碳管。當然也可以採用奈米碳管膠線結構。多根奈米碳管之間靠凡得瓦爾力連接於一起。奈米碳管線112之長度可為0.1毫米至10毫米,直徑可為1微米至1毫米。奈米碳管線112可以通過導電膠如銀膠粘接於支撐體111上,或者將奈米碳管線112熔接於支撐體111上。將奈米碳管線112連接到支撐體111上之前,可將奈米碳管線112浸泡於溶劑如乙醇內,然後於真空中通電流進行熱處理,使溶劑揮發。經過如此處理之奈米碳管線112之導電性及機械強度都得到加強。 The nano carbon line 112 may include a plurality of carbon nanotubes that are substantially parallel to each other, and the carbon nanotubes may be single-walled carbon nanotubes or multi-walled carbon nanotubes. Of course, a carbon nanotube glue line structure can also be used. The multiple carbon nanotubes are connected by van der Waals force. The nanocarbon line 112 can have a length of from 0.1 mm to 10 mm and a diameter of from 1 micron to 1 mm. The nano carbon line 112 may be bonded to the support 111 by a conductive paste such as silver paste, or the nanocarbon line 112 may be welded to the support 111. Before the nanocarbon line 112 is connected to the support 111, the nanocarbon line 112 can be immersed in a solvent such as ethanol, and then subjected to heat treatment in a vacuum to volatilize the solvent. The conductivity and mechanical strength of the nanocarbon line 112 thus treated are enhanced.

陽極12可為透明導電薄膜如氧化銦錫薄膜或電子易於穿透之導電薄膜如鋁膜。當陽極12採用透明導電薄膜時,螢光層13可設置於陽極12面向陰極11之一側上。當陽極12採用電子易於穿透之導電薄膜時,螢光層13可設置於殼體10內壁上,或者設置於陽極12背離陰極11之一側上,還可以填充於陽極12與殼體10之間。本實施例中,陽極12為鋁膜,螢光層13設置於陽極12背離陰極11之一側上。螢光層可為白色螢光粉或彩色螢光粉如紅色螢光粉、藍色螢光粉或綠色螢光粉。 The anode 12 may be a transparent conductive film such as an indium tin oxide film or an electron-transmissive conductive film such as an aluminum film. When the anode 12 is a transparent conductive film, the phosphor layer 13 may be disposed on one side of the anode 12 facing the cathode 11. When the anode 12 is made of an electron-transmissive conductive film, the phosphor layer 13 may be disposed on the inner wall of the casing 10 or on the side of the anode 12 facing away from the cathode 11, and may be filled in the anode 12 and the casing 10. between. In the present embodiment, the anode 12 is an aluminum film, and the phosphor layer 13 is disposed on the side of the anode 12 facing away from the cathode 11. The fluorescent layer can be white fluorescent powder or color fluorescent powder such as red fluorescent powder, blue fluorescent powder or green fluorescent powder.

本實施例當中,屏蔽極14為環狀電極,其可粘接於殼體10之外壁,並且環繞奈米碳管線112發射出之電子之飛行路徑設置。於外加電場之作用下,奈米碳管線112發射之電子從陰極11飛向陽極12並穿透陽極12轟擊螢光層13,使螢光層13發光。即電子之飛行方向大體沿殼體之中心軸之方向前進。因此屏蔽極14環繞殼體10之中心軸設置即可,優選地,屏蔽極14與殼體10形狀一致,且與殼體10同軸設置。 In the present embodiment, the shield electrode 14 is a ring-shaped electrode that can be bonded to the outer wall of the casing 10 and disposed around the flight path of the electrons emitted from the carbon nanotube line 112. Under the action of an applied electric field, electrons emitted from the nanocarbon line 112 fly from the cathode 11 to the anode 12 and penetrate the anode 12 to bombard the phosphor layer 13, causing the phosphor layer 13 to emit light. That is, the direction of flight of the electrons generally proceeds in the direction of the central axis of the casing. Therefore, the shield pole 14 is disposed around the central axis of the housing 10. Preferably, the shield pole 14 conforms to the shape of the housing 10 and is disposed coaxially with the housing 10.

請參閱圖2,第二實施例之場發射像素管200與第一實施例之場發射像素管 100相似,不同之處在於,屏蔽極24為設置於殼體20內壁或外壁上之筒狀導電薄膜。屏蔽極24可由金、銀、銅或鋁等導電率高之金屬形成。優選地,屏蔽極24為金膜。屏蔽極24可以採用濺鍍或蒸鍍之方法形成。當屏蔽極24設置於殼體20內壁上時,須於殼體20封閉之前形成。 Referring to FIG. 2, the field emission pixel tube 200 of the second embodiment and the field emission pixel tube of the first embodiment The 100 is similar except that the shield electrode 24 is a cylindrical conductive film disposed on the inner wall or the outer wall of the casing 20. The shield electrode 24 may be formed of a metal having high conductivity such as gold, silver, copper or aluminum. Preferably, the shield electrode 24 is a gold film. The shield electrode 24 can be formed by sputtering or evaporation. When the shield pole 24 is disposed on the inner wall of the casing 20, it must be formed before the casing 20 is closed.

以上各實施例之場發射像素管於工作時,陰極與屏蔽極上接低電位,陽極接高電位。由於屏蔽極可以屏蔽陽極之高壓,其可以顯著降低奈米碳管線表面之電場強度,場發射像素管之直徑越小,由於屏蔽極離陰極之距離越近,這種屏蔽效應越明顯。由於奈米碳管線表面之電場強度較低,因此其發射電流降低,但其工作電壓卻很高。符合場發射像素管之理想工作條件,具有良好之發射效果與較長之使用壽命。 When the field emission pixel tube of each of the above embodiments is in operation, the cathode and the shield electrode are connected to a low potential, and the anode is connected to a high potential. Since the shielding pole can shield the high voltage of the anode, it can significantly reduce the electric field strength on the surface of the nanocarbon pipeline. The smaller the diameter of the field emission pixel tube, the more obvious the shielding effect is due to the closer the shielding pole is to the cathode. Due to the low electric field strength of the surface of the nanocarbon pipeline, its emission current is reduced, but its operating voltage is high. It meets the ideal working conditions of the field emission pixel tube, and has good emission effect and long service life.

另外,由於屏蔽極與陰極同為低電位,屏蔽極對於奈米碳管線發射出之電子具有排斥作用,且由於屏蔽極環繞奈米碳管線設置,其對電子之排斥作用使奈米碳管線發射出之電子束更加集中的飛向陽極,避免其飛向殼體10之內壁,從而提高電子之利用率,同時可避免於殼體內壁上產生X射線。 In addition, since the shield electrode and the cathode are both at a low potential, the shield electrode has a repulsive effect on electrons emitted from the carbon nanotube line, and since the shield electrode is disposed around the nano carbon line, its electron repulsion causes the nano carbon line to be emitted. The electron beam is more concentrated toward the anode, avoiding flying to the inner wall of the casing 10, thereby improving the utilization of electrons and avoiding the generation of X-rays on the inner wall of the casing.

綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

10‧‧‧殼體 10‧‧‧shell

11‧‧‧陰極 11‧‧‧ cathode

12‧‧‧陽極 12‧‧‧Anode

13‧‧‧螢光層 13‧‧‧Fluorescent layer

14‧‧‧屏蔽極 14‧‧‧Shielding pole

100‧‧‧場發射像素管 100‧‧ ‧ field emission pixel tube

102‧‧‧出光部 102‧‧‧Lighting Department

111‧‧‧支撐體 111‧‧‧Support

Claims (9)

一種場發射像素管,其包括殼體、分別設置於殼體兩端之陽極與陰極,該陰極包括奈米碳管線,該殼體一端設置有出光部,該陽極對應該出光部設置,其改進在於,該場發射像素管還包括屏蔽極,該屏蔽極環繞該奈米碳管線設置於殼體表面,該屏蔽極與該殼體同軸設置。 A field emission pixel tube comprising a casing, an anode and a cathode respectively disposed at two ends of the casing, the cathode comprising a carbon carbon pipeline, the casing is provided with a light exiting portion at one end, and the anode is disposed corresponding to the light exiting portion, and the improvement is The field emission pixel tube further includes a shielding electrode disposed around the nano carbon line on the surface of the housing, the shielding electrode being disposed coaxially with the housing. 如請求項1所述之場發射像素管,其中,該屏蔽極為環狀電極。 The field emission pixel tube of claim 1, wherein the shield is substantially annular. 如請求項1所述之場發射像素管,其中,該屏蔽極為導電薄膜。 The field emission pixel tube of claim 1, wherein the shield is extremely conductive film. 如請求項3所述之場發射像素管,其中,該導電薄膜為金膜、銀膜、銅膜或鋁膜。 The field emission pixel tube according to claim 3, wherein the conductive film is a gold film, a silver film, a copper film or an aluminum film. 如請求項1所述之場發射像素管,其中,該屏蔽極設置於該殼體內表面或外表面上。 The field emission pixel tube of claim 1, wherein the shielding electrode is disposed on an inner surface or an outer surface of the housing. 如請求項1所述之場發射像素管,其中,該陰極包括支撐體,該奈米碳管線設置於該支撐體上。 The field emission pixel tube of claim 1, wherein the cathode comprises a support, and the nanocarbon pipeline is disposed on the support. 如請求項7所述之場發射像素管,其中,該奈米碳管線與該支撐體之間採用導電膠粘接或者該奈米碳管線一端熔接於該支撐體上。 The field emission pixel tube according to claim 7, wherein the nano carbon line and the support body are bonded by a conductive adhesive or one end of the nano carbon line is welded to the support body. 如請求項1所述之場發射像素管,其中,該奈米碳管線之長度為0.1毫米至10毫米。 The field emission pixel tube of claim 1, wherein the nano carbon line has a length of 0.1 mm to 10 mm. 如請求項1所述之場發射像素管,其中,該奈米碳管線之直徑為1微米至1毫米。 The field emission pixel tube of claim 1, wherein the nanocarbon line has a diameter of 1 micrometer to 1 millimeter.
TW96126538A 2007-07-20 2007-07-20 Field emission pixel tube TWI394195B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW96126538A TWI394195B (en) 2007-07-20 2007-07-20 Field emission pixel tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW96126538A TWI394195B (en) 2007-07-20 2007-07-20 Field emission pixel tube

Publications (2)

Publication Number Publication Date
TW200905714A TW200905714A (en) 2009-02-01
TWI394195B true TWI394195B (en) 2013-04-21

Family

ID=44722838

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96126538A TWI394195B (en) 2007-07-20 2007-07-20 Field emission pixel tube

Country Status (1)

Country Link
TW (1) TWI394195B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111293016B (en) * 2020-03-20 2023-03-14 西门子爱克斯射线真空技术(无锡)有限公司 X-ray tube and X-ray imaging apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW480537B (en) * 2001-01-19 2002-03-21 Ind Tech Res Inst Method for enhancing emission efficiency of carbon nanotube emission source field
US6692327B1 (en) * 1999-01-13 2004-02-17 Matsushita Electric Industrial Co., Ltd. Method for producing electron emitting element
US20040195957A1 (en) * 2003-04-03 2004-10-07 Zhaofu Hu Field emission display

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6692327B1 (en) * 1999-01-13 2004-02-17 Matsushita Electric Industrial Co., Ltd. Method for producing electron emitting element
TW480537B (en) * 2001-01-19 2002-03-21 Ind Tech Res Inst Method for enhancing emission efficiency of carbon nanotube emission source field
US20040195957A1 (en) * 2003-04-03 2004-10-07 Zhaofu Hu Field emission display

Also Published As

Publication number Publication date
TW200905714A (en) 2009-02-01

Similar Documents

Publication Publication Date Title
US8319413B2 (en) Color field emission display having carbon nanotubes
US7615919B2 (en) Field emission device with two light-permeable sides
JP4481948B2 (en) Field emitter cathode, method of manufacturing the same, and planar light source
TWI467616B (en) Field emission cathode device and field emission equipment using the same
JP5021450B2 (en) Field emission lamp and manufacturing method thereof
CN101335175B (en) Field emission pixel tube
TWI394195B (en) Field emission pixel tube
JP2002042735A (en) Fluorescent lamp
JP4043139B2 (en) Manufacturing method of electron emission source
CN102222597A (en) Field emission lamp tube
US7781954B2 (en) Pixel element for field emission display
JP2008147193A (en) Field emission type lamp
US7635945B2 (en) Field emission device having a hollow shaped shielding structure
KR102032291B1 (en) Field emission devices having field emission emitters inclusive of photoelectric material and mehtods for fabricating the same
US7821193B2 (en) Color pixel element for field emission display
US7701125B2 (en) Field emission lamp
KR20060114865A (en) Electron emitting element, and method of manufacturing the same
US20080030123A1 (en) Pixel tube for field emission device
TWI427662B (en) Field emission cathod device and field emission display
TWI333226B (en) Field emission pixel tube
TWI321801B (en) Triode field emission pixel tube
JP2004022167A (en) Electron emitting element, its manufacturing method, and image display device using element
TWI310203B (en) Double-sided field emission pixel tube
CN100555544C (en) Field emission pixel tube
TW200828393A (en) Field emission tube