CN100555544C - Field emission pixel tube - Google Patents
Field emission pixel tube Download PDFInfo
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- CN100555544C CN100555544C CNB2006100618048A CN200610061804A CN100555544C CN 100555544 C CN100555544 C CN 100555544C CN B2006100618048 A CNB2006100618048 A CN B2006100618048A CN 200610061804 A CN200610061804 A CN 200610061804A CN 100555544 C CN100555544 C CN 100555544C
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 15
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 15
- 239000002086 nanomaterial Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000011852 carbon nanoparticle Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000002127 nanobelt Substances 0.000 claims description 2
- 239000002070 nanowire Substances 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims 1
- -1 nanometer rods Substances 0.000 claims 1
- 239000002002 slurry Substances 0.000 abstract description 13
- 230000005684 electric field Effects 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 239000002071 nanotube Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 229910000986 non-evaporable getter Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
Abstract
本发明涉及一种场发射像素管。该场发射像素管包括:一个中空壳体,该中空壳体具有一出光部,该出光部的内壁依次设有一荧光层和一阳极层,所述中空壳体内部是真空密封的,该中空壳体内有一个金属筒,该金属筒内壁设有一层经固化的浆料层,该浆料层含有导电的纳米材料,该金属筒与至少一个阴极电极电连接。该场发射像素管的金属筒对电场有很强的屏蔽作用,可以有效的减弱碳纳米管表面的电场,使得碳纳米管可以在10千伏或更高的电压下稳定的工作。
The invention relates to a field emission pixel tube. The field emission pixel tube includes: a hollow shell, the hollow shell has a light exit portion, the inner wall of the light exit portion is provided with a fluorescent layer and an anode layer in turn, the inside of the hollow shell is vacuum-sealed, There is a metal cylinder inside the hollow shell, and the inner wall of the metal cylinder is provided with a solidified slurry layer, the slurry layer contains conductive nanometer material, and the metal cylinder is electrically connected with at least one cathode electrode. The metal cylinder of the field emission pixel tube has a strong shielding effect on the electric field, which can effectively weaken the electric field on the surface of the carbon nanotube, so that the carbon nanotube can work stably at a voltage of 10 kV or higher.
Description
技术领域 technical field
本发明涉及一种场发射元件,尤其涉及一种场发射像素管。The invention relates to a field emission element, in particular to a field emission pixel tube.
背景技术 Background technique
场发射电子源以及利用该电子源轰击荧光物质而发光的场发射发光技术已经在场发射平面显示器等领域得到应用。这种场发射技术是在真空环境下,利用外加电场作用将尖端的电子激发出来,电子轰击荧光粉发出可见光从而进行显示。在传统场发射电子源中,一般采用微细钼金属尖端或矽尖端作为电子发射端,随着纳米技术的发展,最近还采用纳米碳管作为电子发射端。The field emission electron source and the field emission luminescence technology that uses the electron source to bombard fluorescent substances to emit light have been applied in fields such as field emission flat panel displays. This field emission technology uses an external electric field to excite the electrons at the tip in a vacuum environment, and the electrons bombard the phosphor to emit visible light for display. In traditional field emission electron sources, fine molybdenum metal tips or silicon tips are generally used as electron emission ends. With the development of nanotechnology, carbon nanotubes are also used as electron emission ends recently.
为了有效的利用荧光粉的发光效率,像素管一般工作在10千伏左右的高压下,然而碳纳米管在强电压下很容易损坏,导致发射不稳定。In order to effectively utilize the luminous efficiency of phosphor powder, pixel tubes generally work at a high voltage of about 10 kV, but carbon nanotubes are easily damaged under high voltage, resulting in unstable emission.
发明内容 Contents of the invention
有鉴于此,提供一种可以在高压下稳定工作的场发射元件实为必要。In view of this, it is necessary to provide a field emission device that can work stably under high voltage.
一种场发射像素管,其包括:一个中空壳体,该中空壳体具有一出光部,该出光部的内壁依次设有一荧光层和一阳极层,所述中空壳体内部是真空密封的,该中空壳体内有一个金属筒,该金属筒内壁设有一层经固化的浆料层,该浆料层含有导电的纳米材料,该金属筒与至少一个阴极电极电连接。A field emission pixel tube, which includes: a hollow casing, the hollow casing has a light outlet, the inner wall of the light outlet is sequentially provided with a fluorescent layer and an anode layer, the inside of the hollow casing is a vacuum Sealed, the hollow shell has a metal cylinder inside, and the inner wall of the metal cylinder is provided with a solidified slurry layer, the slurry layer contains conductive nano-materials, and the metal cylinder is electrically connected with at least one cathode electrode.
相对于现有技术,所述场发射像素管的金属筒对电场有很强的屏蔽作用,将含有碳纳米管的浆料涂于金属筒的内壁作为阴极,可有效的减弱碳纳米管周围的电场,使得碳纳米管可以在10千伏或更高的电压下稳定的工作。Compared with the prior art, the metal cylinder of the field emission pixel tube has a strong shielding effect on the electric field, and the slurry containing carbon nanotubes is coated on the inner wall of the metal cylinder as a cathode, which can effectively weaken the electric field around the carbon nanotubes. The electric field enables the carbon nanotubes to work stably at a voltage of 10 kV or higher.
附图说明 Description of drawings
图1是本发明实施例提供的场发射像素管的剖面示意图。FIG. 1 is a schematic cross-sectional view of a field emission pixel tube provided by an embodiment of the present invention.
图2是本发明实施例提供的场发射像素管沿图1中II-II方向的截面示意图。FIG. 2 is a schematic cross-sectional view of the field emission pixel tube provided by an embodiment of the present invention along the direction II-II in FIG. 1 .
具体实施方式 Detailed ways
以下将结合附图对本发明作进一步详细说明。The present invention will be described in further detail below in conjunction with the accompanying drawings.
本实施例提供一种场发射像素管10。请参阅图1和图2,该场发射像素管10包括:一个中空壳体11,该中空壳体11具有一出光部12,该出光部12的内壁依次设有一荧光层13和一阳极层14,所述中空壳体11内部是真空密封的,该中空壳体11内有一个金属筒16,该金属筒16内壁设有一层经固化的浆料层17,该浆料层17含有导电的纳米材料,该金属筒16与至少一个阴极电极电连接。在本实施例中该金属筒16分别与两个阴极电极电连接,该两个阴极电极分别为第一阴极电极18和第二阴极电极19。This embodiment provides a field
该中空壳体11内部是真空密封的,在本实施例中,该壳体11为中空圆柱体,且该壳体11的材料为石英玻璃或玻璃。可以理解的是,该壳体11还可以是中空的多边形棱柱,同时该壳体11的出光部12可以为平面也可以为球面或非球面,本领域技术人员可以根据实际情况进行选择。The inside of the
所述荧光层13沉积在出光部12的内壁上。该荧光层13可以由白色荧光粉或彩色荧光粉组成。当电子轰击荧光层13时可发出白色或彩色可见光。所述阳极层14镀在沉积有荧光层13的出光部12内壁上并将荧光层13覆盖,起到导电并反射荧光粉发光的作用。该阳极层14为金属膜,具有良好的导电性和镜面平整度,在本实施例中,该阳极层14为铝膜。The
在本实施例中,所述金属筒16为一圆筒,且该金属筒16的中心轴垂直于出光部12。可以理解的是,该金属筒16还可以为方筒、多边形筒等其它筒状结构。In this embodiment, the
所述金属筒16内壁有一层经固化的浆料层17,该浆料层17含有导电的纳米材料,所述纳米材料可以选自碳纳米管、碳纳米棒、碳60,碳纳米颗粒、导电金属或半导体的纳米管、纳米线、纳米棒,纳米带及其混合物中的任意一种,本实施例中选用碳纳米管。将配好的浆料层17涂敷于金属筒16内壁并将其固化,最后用橡皮摩擦金属筒16内壁,使更多的浆料层17中的碳纳米管露头,增强其场发射性能。金属筒16对碳纳米管发射体的屏蔽作用取决于浆料层17边缘与金属筒16边缘的距离,距离越大,屏蔽作用越强;还取决于金属筒16的直径,直径越小,屏蔽作用越强。The inner wall of the
所述金属筒16分别与第一阴极电极18和第二阴极电极19电连接。该第一阴极电极18与该第二阴极电极19穿过所述壳体11并延伸至壳体11外部。在第一阴极电极18和第二阴极电极19穿过的部位可采用玻璃封接技术密封,以保证壳体11内部的密封性。The
该场发射像素管10进一步包括一个阳极电极15。该阳极电极15与阳极层14电连接。该阳极电极15穿过所述壳体11延伸至壳体11外部。在阳极电极15穿过的部位可采用玻璃封接技术密封,以保证壳体11内部的密封性。The field
该场发射像素管10进一步包括一吸气剂20,用于吸附场发射像素管10内残余气体,维持场发射像素管10内部的真空度。该吸气剂20可以为蒸散型吸气剂,在壳体11封接后通过高频加热蒸镀的方法形成在靠近第一阴极电极18和第二阴极电极19的壳体11内壁上。该吸气剂20也可以为非蒸散型吸气剂,固定在靠近第一阴极电极18和第二阴极电极19的壳体11内壁上,或者固定在金属筒16的内壁或外壁。The field
该场发射像素管10进一步包括一排气孔21,该排气孔21外接真空泵,用以将壳体11抽真空。封装时,先通过排气孔21使场发射像素管10达到一定的真空度后再进行最后的封装。The field
当该场发射像素管10工作时,分别给阳极电极15与第一阴极电极18、第二阴极电极19之间加上电压形成电场,通过电场作用,金属筒11内壁的浆料层17中的碳纳米管发射出电子,电子穿透阳极层14轰击荧光层13,发出可见光。可见光一部分直接从出光部12射出,一部分射在阳极层14上。阳极层14将其反射并最终透过出光部12射出。多个这样的场发射像素管10排列起来可以进行照明或信息显示。When the field
相对于现有技术,所述场发射像素管10的金属筒16对电场有很强的屏蔽作用,将含有碳纳米管的浆料涂于金属筒16的内壁作为阴极,则可以有效的减弱碳纳米管周围的电场,使得碳纳米管可以在10千伏或更高的电压下稳定的工作。Compared with the prior art, the
另外,本领域技术人员还可以在本发明精神内做其它变化,当然,这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围内。In addition, those skilled in the art can also make other changes within the spirit of the present invention. Of course, these changes made according to the spirit of the present invention should be included in the scope of protection claimed by the present invention.
Claims (9)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CNB2006100618048A CN100555544C (en) | 2006-07-26 | 2006-07-26 | Field emission pixel tube |
US11/565,528 US7635945B2 (en) | 2006-07-21 | 2006-11-30 | Field emission device having a hollow shaped shielding structure |
Applications Claiming Priority (1)
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CNB2006100618048A CN100555544C (en) | 2006-07-26 | 2006-07-26 | Field emission pixel tube |
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CN101114563A CN101114563A (en) | 2008-01-30 |
CN100555544C true CN100555544C (en) | 2009-10-28 |
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CNB2006100618048A Active CN100555544C (en) | 2006-07-21 | 2006-07-26 | Field emission pixel tube |
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- 2006-07-26 CN CNB2006100618048A patent/CN100555544C/en active Active
Non-Patent Citations (2)
Title |
---|
碳纳米管场发射显示器的研究进展. 朱长纯,刘兴辉.发光学报,第26卷第5期. 2005 |
碳纳米管场发射显示器的研究进展. 朱长纯,刘兴辉.发光学报,第26卷第5期. 2005 * |
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