TWI321801B - Triode field emission pixel tube - Google Patents

Triode field emission pixel tube Download PDF

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Publication number
TWI321801B
TWI321801B TW95129559A TW95129559A TWI321801B TW I321801 B TWI321801 B TW I321801B TW 95129559 A TW95129559 A TW 95129559A TW 95129559 A TW95129559 A TW 95129559A TW I321801 B TWI321801 B TW I321801B
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TW
Taiwan
Prior art keywords
field emission
cathode
pole
tube
emission pixel
Prior art date
Application number
TW95129559A
Other languages
Chinese (zh)
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TW200809898A (en
Inventor
Yuan-Chao Yang
Yang Wei
Liang Liu
Kai-Li Jiang
Shou-Shan Fan
Original Assignee
Hon Hai Prec Ind Co Ltd
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Application filed by Hon Hai Prec Ind Co Ltd filed Critical Hon Hai Prec Ind Co Ltd
Priority to TW95129559A priority Critical patent/TWI321801B/en
Publication of TW200809898A publication Critical patent/TW200809898A/en
Application granted granted Critical
Publication of TWI321801B publication Critical patent/TWI321801B/en

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Description

^21801 '九、發明說明: "【發明所屬之技術領域】 本發明涉及一種場發射元件,尤其涉及一種三極型場 發射像素管。 【先前技術】 場發射電子源以及利用該電子源發出的電子轟擊螢光 物質而發光之場發射發光技術已經在場發射平面顯示器領 _域中得到應用。這種場發射技術是於真空環境下,利用外 加電場作用將電子源尖端之電子激發出來。在傳統場發射 電子源中,一般採用微細錮金屬尖端、矽尖端作爲電子發 射端,隨著奈米技術之發展,最近還採用奈米碳管作電 子發射端。 理論上,由於奈米碳管具有非常小之直徑,很大之長 徑比’因此於外電場作用下其具有很大的場增強因數。惟, 在實際應用中,例如平面型場發射顯示器中,夺米碳管平 面薄膜之整體宏觀場發射增強因數並未能達到單個奈米碳 管的數值,導致發射電壓較高,場發射電流密度小,發光 亮度較低。 ㈣於此’提供—種發射電流密度大,發光亮度高的 場發射元件實爲必要。 【發明内容】 以下將以實施例說明一種場發射元件。 一種三極型場發射像素管,其包括:—個中^殼體, 7^21801 'Nine, invention: " [Technical Field of the Invention] The present invention relates to a field emission element, and more particularly to a three-pole field emission pixel tube. [Prior Art] A field emission electron source and a field emission illuminating technique that emits light by bombarding a fluorescent substance with electrons emitted from the electron source have been applied in the field emission flat panel display field. This field emission technique uses an external electric field to excite electrons at the tip of the electron source in a vacuum environment. In the conventional field emission electron source, the tip of the fine tantalum metal and the tip of the crucible are generally used as the electron-emitting end. With the development of nanotechnology, a carbon nanotube has recently been used as the electron-emitting end. In theory, since the carbon nanotubes have a very small diameter and a large aspect ratio, they have a large field enhancement factor under the action of an external electric field. However, in practical applications, such as planar field emission displays, the overall macroscopic field emission enhancement factor of the carbon nanotube flat film fails to reach the value of a single carbon nanotube, resulting in a higher emission voltage and field emission current density. Small, low brightness. (4) It is necessary to provide a field emission element with a large emission current density and high luminance. SUMMARY OF THE INVENTION A field emission element will be described below by way of embodiments. A three-pole field emission pixel tube comprising: a middle case, 7

Claims (1)

1321801 十、申請專利範圍 日修正替換頁I . 種三極型場發射像素管,包括:-個中^殼體,一個螢 .光物質層,一個陽極層,一個陰極發射體及一個閘極體, 該殼體具有一個出光部,該營光物質層和陽極層依次 的内壁上,該陰極發射體設置在中空殼體内部 極發射的該閘極體位於令空殼體内並靠近陰 ^ ^又良在於,該陰極發射體包括一奈米磁 官線,該奈米石发管線作爲電 在…、 極發射體設置。 &射源相極體壞繞該陰 2. 如申請專利範圍第 其中,該型場發射像素管, 工成體内。卩疋真空密封的。 3. 如申請專利範圍第i 其中,該閘極二 所通之三極型場發射像素管, η亥閘極體疋一個令空柱體, 面及至少-個從頂面延 柱體具有一頂 閘極體内,且該十处柱广,,該陰極發射體位於 工柱體的底面具有一彻 正對於陰極發射體的奈米碳管線。 # ,該開口 4·如申凊專利範園第 其,,該間極二項極型場發射像素管, 5.如申請專利範圍第3項戶圓形或多邊形。 還進-步包括-個_:二=象素管, Τι體電連接,—過 6.如申請專利範圍第i項 其令,還進—步包括一個陽型場發射像素管, 4%極電極與所述 1321801 月27日修正替換·員 %極層電連接,且該陽極電 外部。 牙過所述殼體延伸至殼體 7.如申請專利範圍第i項所述之三 其中,還進-步包括一個陰極電極,节象素管’ 陰極發射體電連接,且該極电極與所述 殼體外部。# 極电極穿過所述殼體延伸至 8·如申請專利範圍第1項 其中’該陰極發射體進二步包括:素管’ 極支撐柱由金屬絲製成。 個陰極支撐柱,該陰 9. 如^請專Γ範圍第1項所述之三極型場發射像素〜 其中’ 5亥陽極層爲銘膜。 10. 如申請專利範圍第1馆%、+、 管,其令,進一牛Λ貝所述之三極型場發射像素 體内壁上。括吸乳劑層,該吸氣劑層形成於殼 11. 如申請專利笳囹筮Ί = 管,立中,項所述之三極型場發射像素 二 該奈米碳管線之長度為。」毫米至Η): 12其之三極型場發射像素管, s綠之直偟為1微米至1毫米。 151321801 X. Patent Application Scope Correction Replacement Page I. A three-pole field emission pixel tube comprising: - a middle casing, a fluorescent material layer, an anode layer, a cathode emitter and a gate body The housing has a light exiting portion, the camping light material layer and the anode layer are sequentially on the inner wall, and the cathode emitter is disposed inside the hollow shell. The gate body is located in the hollow shell and is close to the cathode. The good thing is that the cathode emitter comprises a nano-magnetic line, which is arranged as an electric emitter. & the source phase body is broken around the cathode 2. As in the scope of the patent application, the field emits a pixel tube, which is formed into a body.卩疋 Vacuum sealed. 3. For example, in the scope of the patent application, the gate of the gate is a three-pole field emission pixel tube, the ηhai gate body is a hollow cylinder, and at least one of the columns from the top surface has a In the top gate body, and the ten pillars are wide, the cathode emitter is located on the bottom surface of the cylinder body and has a carbon nanotube pipeline directly facing the cathode emitter. #, the opening 4·such as Shenyi Patent Fanyuan No., the pole pole pole field emission pixel tube, 5. If the patent application scope is the third item round or polygon. Further steps include - _: two = pixel tube, Τι body electrical connection, - 6. As claimed in the patent scope, item i, the step further includes a positive field emission pixel tube, 4% pole The electrode is electrically connected to the replacement layer of the replacement layer of the 1321801, and the anode is electrically external. The tooth extends through the housing to the housing 7. As described in the third item of the patent application, the method further includes a cathode electrode, and the cathode pixel tube is electrically connected to the cathode emitter, and the pole electrode With the exterior of the housing. # pole electrode extends through the casing to 8. The scope of the invention is as follows: wherein the cathode emitter comprises two steps: the element tube is supported by a wire. A cathode support column, the cathode 9. For example, please select the three-pole field emission pixel described in item 1 of the range ~ where the '5 hai anode layer is the Ming film. 10. If the scope of the patent application is 1%, +, and the tube, the order is to enter the inner wall of the three-pole field emission pixel described in a mussel. An emulsion layer is formed, and the getter layer is formed on the shell. 11. The length of the nanocarbon pipeline is as described in the patent 笳囹筮Ί = tube, Lizhong, and the third-pole field emission pixel. "mm to Η": 12 of its three-pole field emission pixel tube, s green straight is 1 micron to 1 mm. 15
TW95129559A 2006-08-11 2006-08-11 Triode field emission pixel tube TWI321801B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95129559A TWI321801B (en) 2006-08-11 2006-08-11 Triode field emission pixel tube

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Application Number Priority Date Filing Date Title
TW95129559A TWI321801B (en) 2006-08-11 2006-08-11 Triode field emission pixel tube

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TW200809898A TW200809898A (en) 2008-02-16
TWI321801B true TWI321801B (en) 2010-03-11

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Publication number Priority date Publication date Assignee Title
TWI427663B (en) * 2010-12-06 2014-02-21 Hon Hai Prec Ind Co Ltd Field emission pixel tube

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