TWI393177B - System and method for carrying out liquid and subsequent drying treatments on one or more wafers - Google Patents

Description

System and method for performing liquid and subsequent drying on one or more wafers

The present invention relates to a technique for fabricating a microelectronic device using a spray processor tool. More particularly, the present invention relates to a method comprising a plurality of aspects in which one or more device precursors can be contacted with a liquid (eg, particularly a rinse liquid) using a spray processor tool The precursors are then dried.

The microelectronics industry relies on a variety of wet/dry processing formulations in the manufacture of various microelectronic devices. The microelectronics industry can perform such wet/drying processes using a variety of configured systems. Many of these systems can be in the form of spray processor tools. A spray processor tool generally refers to a tool in which one or more processing chemicals, rinsing liquids, and/or gases are sprayed onto one or more wafers, either singly or in combination, in a series of one or more steps. Above. This is in contrast to the wet cleaning station tool that immerses the wafer in the fluid bath during the process. In a typical spray processor tool, fluid can be sprayed onto the wafer while the wafer is supported on a rotating platen (such as a turntable, chuck, etc.). Examples of spray processor systems include MERCURY available from FSI International, Inc., Chaska, MN. Or ZETA Spray processor system, SCEPTER ^{T M} or SPECTRUM available from Semitool, Inc., Kalispell, Montana Spray processor system, spray processor system available from SEZ AG, Villach, Austria and sold under the trademark SEZ 323.

A typical formulation for a spray processor tool can include a processing step involving first subjecting the wafer to one or more wet processing (eg, chemical processing and/or rinsing) followed by drying the wafer thereafter. For example, conventional rinsing/drying sequences may involve first spraying a rinsing liquid onto a stack of wafers supported on a rotating carousel in a processing chamber. The flushing is stopped and the waveguide that passes into the processing chamber for delivering the flushing liquid is then purged. The dry gas can then be introduced into the chamber by the same or different waveguides to dry the wafer.

One way to assess the effectiveness of a particular processing recipe is to evaluate by measuring the extent of particles added to the wafer after processing according to the processing recipe. It is generally desirable to add the number of granules (i.e., the addition of granules = granules measured after treatment of the formulation - granules measured prior to treatment of the formulation) is always as low as possible.

Some treatment formulations can only perform well with respect to the addition of particles in a relatively narrow range of processing parameters. For example, a conventional rinsing/drying formulation can be practiced to produce consistently low added granules only when the rinsing liquid is within a particular temperature range (eg, moderate warmth). However, if the rinsing liquid is at a temperature outside this range (for example, if the rinsing liquid system is cold or hot), the same formulation may suffer from excessive and/or inconsistent added particles. This temperature constraint limits the practical use of this formulation. For example, it may be additionally desirable to be able to use a very hot rinse liquid to reduce cycle time as the hotter liquid will rinse the wafer faster and dry it more quickly. In addition, it may be additionally desirable to be able to process temperature sensitive substrates using very cold rinse liquids. In short, conventional rinsing/drying sequences may tend to be overly sensitive to temperature in relation to the addition of particles, which typically comes at the expense of processing flexibility.

As microelectronic device components become smaller and smaller, the size constraints on the added particles will become more stringent. For example, for larger sized parts, the addition of particles with a monitor size greater than 150 nm (this size is often referred to as "particles > 150 nm" or other similar references) is sufficient to help ensure acceptable device quality. However, for smaller parts, it may be necessary to monitor particles >90 nm, or >65 nm, or even smaller particles. Some conventional rinsing/drying sequences perform well with less stringent monitoring, but when monitoring smaller added granules, they perform less well than needed.

Therefore, there is a continuing need in the microelectronics industry to implement wet/dry processing formulations with always lower added granules. In particular, there is a continuing need in the art to provide methods that are less sensitive to temperature and/or even when more stringent monitoring standards are applied (eg, standards such as >90 nm, >65 nm, etc.) to provide lower added particles. .

The present invention provides an improved technique for performing one or more wet liquid processing (especially flushing) and subsequent drying processing in a sequence when processing one or more wafers. More particularly, the present invention provides an improved manner in which the wet process can be transitioned to a drying process in a manner that significantly reduces the additional particles that may be observed after the more conventional wet/drying sequence. The present invention recognizes that this transitional feature can significantly affect the effectiveness of the added particles.

The invention is particularly useful for practicing a rinse/dry formulation in a spray processor tool. The present invention is at least most advantageously practiced to practice a transition between a final rinse process practiced in a spray processor tool and a subsequent drying process, after which the wafer can be removed from the tool. In fact, when using a separate rinsing/drying process in the spray processor tool of the present invention, we can achieve very neutral sizes of particles larger than 65 nanometers (nm) on a 300 mm (mm) wafer. Add data for the particles. Referring to Figures 2a, 2b, 3a and 3b, the data illustrating this will be further discussed below.

The apparent improved performance with respect to the addition of granules is not the only benefit observed. We have also observed a significant benefit of the relatively insensitive sensitivity of the treatment efficiency in the addition of granules to the temperature of the rinsing liquid. That is, regardless of whether the temperature of the rinsing liquid is cold, ambient temperature, warmth, or heat, improved performance associated with the addition of particles can be obtained. The ability to practically perform rinsing at any desired temperature, where the rinsing medium is in the form of a liquid that does not improperly increase the addition of granules, provides great flexibility associated with a variety of rinsing and drying formulations, such rinsing and drying methods It can also be used for a variety of wafers processed. This advantage is in sharp contrast to the more conventional methodology that tends to provide optimal performance for rinsing liquids only in the relatively narrow range of temperatures.

In some embodiments, faster cycle times can be achieved by flushing with a hot rinse liquid (e.g., 60 ° C to 100 ° C), without the use of hot liquids which would result in an excessive increase in the undue risk of added particles. Quite simply, the hotter rinse liquid tends to evaporate faster and the wafer flushed with the hotter liquid dries faster than the wafer rinsed with the cooler liquid. Additionally, the processing chamber can be heated using a hotter rinsing liquid that reduces the time required to dry the wafer and chamber. For example, a specific method involving the use of warm water (35 ° C) requires a drying time of 400 seconds (6.7 minutes). Using hot rinse water (85 ° C), this drying time can be significantly reduced by 4.5 minutes while still providing very neutral added particles.

The present invention is based, at least in part, on a practical, technical solution for solving the problem that the addition of particles can be a consequence of the manner in which the treatment process transitions from a wet process (e.g., rinse) to a dry process. One conventional process, for example, may involve a formulation in which the wafer is rinsed, then the rinse line that passes into the processing chamber is purged, and then the wafer is dried. While not wishing to be bound by theory, we believe that this unprotected, unshielded purification is a significant cause of the addition of particles. We have observed that liquid mist or aerosols are produced when purifying the liquid line into the processing chamber. In addition to possibly exceeding a relatively narrow temperature range, the mist or aerosol can sink into fine droplets on the surface of the dried wafer. These droplets are then detected as spot defects and are therefore added particles. The number of added particles is related to smaller particles (e.g., particles having a size less than about 90 nm) and tends to be the largest. Briefly, unprotected, unshielded liquid purification according to conventional methods is a source of added particles, wherein the number of added particles can be a powerful function of the temperature of the purified liquid. In a practical mode, the present invention preferably injects a defensive function into at least a portion of the waveguide via suction, by which the treatment liquid, particularly the rinsing liquid, can be dispensed into a processing chamber. This allows at least a portion of the remaining liquid in the corresponding supply line to be removed via backwashing rather than separate purification through the inlet chamber after the liquid is stopped from flowing into the chamber or sprayed into the chamber. By sucking back at least a portion of the remaining rinse liquid, a smaller amount of aerosol or mist that can affect the surface of the wafer will be produced.

Again, while not wishing to be bound by theory, it is believed that when the surface of the wafer begins to dry, the surfaces become susceptible to contamination. In addition, faster drying tends to increase this weakness. Thus, when purification occurs, when the surface of the wafer is dry or partially dried, purification tends to be more problematic in terms of adding particles. This problem typically occurs when, for example, a wafer is rotated in a processing chamber during cleaning. The rotating wafer tends to dry or begin to dry in a time period that is shorter than the time period in which the purification is completed. In other words, purification takes more time than drying. As the purification continues, there will be a period of time when the mist/suspension particles associated with the purification are in contact with the relatively dry wafer surface. As a result, a longer purge cycle makes the surface of the rotating wafer more susceptible to contamination.

The invention also includes embodiments in which the purge passes into one or more of the liquid supply lines of the processing chamber while one or more other supply lines are used to wet the wafer surface. After purging the preceding lines, the flow through the subsequent lines can be stopped, after which the subsequent lines can be emptied by sucking back the remaining liquid. The invention is significant in that it allows, if desired, at least some of the cleaning into the processing chamber while the wafer surface is still wet and prevents the wafer surface from being exposed to aerosols that tend to appear with purification. Or misty pollution.

Alternatively, if the back suction function is used to remove all of the remaining liquid by the supply line, the purge of the inlet chamber can be completely avoided during the transition from the wet process to the dry process.

Thus, the embodiments discussed above encompass that at least a portion of the remaining liquid in the liquid supply line to the processing chamber is not directly purged at the end of the rinsing process, but is removed from the device via a different path. Back sucking is a way of supplying energy to remove this remaining liquid by removing energy. Other removal strategies using a suitable valve block, additional waveguides, etc. may involve the use of pressure to blow the remaining liquid from the line to a destination (such as a drain or recirculation) rather than directly into the processing chamber.

Accordingly, it should be understood that any conventional system known to purify the remaining liquid (especially flushing liquid) that is passed into a processing chamber, now or later, can benefit from the use of the suckback function in accordance with the present invention.

In another mode of practice, the present invention provides a treatment formulation in which at least a portion of the residual treatment liquid (especially a rinse liquid) that is passed into the processing chamber is not purged. Alternatively, the residual portion of the treatment liquid only stays in the corresponding supply line until after the one or more wafers are removed from the processing chamber. After the wafer is removed from the processing chamber, the residual processing liquid can be backed up or the residual processing liquid that is passed into the processing chamber can be safely purged.

The invention also includes embodiments in which the purge passes into one or more of the liquid supply lines of the processing chamber while one or more other supply lines are used to wet the wafer surface. After purging the front line, the flow through the back line can be stopped, after which the wafer is removed and the subsequent lines are subsequently purged or desorbed. This aspect of the invention is significant in that it allows, if desired, at least some of the cleaning into the processing chamber while the wafer surface is still wet and prevents the wafer surface from being inclined toward purification. The presence of aerosols or mist contamination.

Alternatively, if all of the remaining liquid in the supply line remains only in residence, the purge of the inlet chamber can be completely avoided during the transition from the wet process to the dry process.

In one aspect, a system for processing a microelectronic substrate in accordance with the present invention includes: a processing chamber in which one or more microelectronic substrates can be positioned during processing; a fluid transfer path by which the fluid is delivered The path can distribute the fluid on the substrate positioned in the processing chamber; and a fluid removal path fluidly coupled to the fluid transfer path in a manner such that the remainder of the fluid transfer path can be withdrawn from the fluid transfer path At least a portion of the liquid does not directly purify at least the remaining liquid portion on one or more substrates.

In another aspect, a spray processor system in accordance with the present invention includes: a processing chamber in which one or more microelectronic substrates can be positioned during processing; and a fluid transfer system that flows with the processing chamber Connected. The fluid transfer system includes a fluid transfer path through which fluid can be dispensed onto a substrate positioned in the processing chamber, and a fluid removal path fluidly coupled to the fluid transfer path in a manner Educating at least a portion of the remaining fluid in the fluid transfer path from at least a portion of the fluid transfer path without directly purifying the portion of the remaining liquid on the one or more substrates; and a fluid bypass path in a manner The fluid is coupled to the fluid transfer path and the fluid removal path such that when the gas flows through the fluid bypass path, a vacuum is applied to at least a portion of the fluid transfer path and the fluid removal path.

In another aspect, a method of processing one or more microelectronic substrates in accordance with the present invention includes the steps of positioning one or more microelectronic substrates in a processing chamber, and distributing the liquid to the processing by a fluid transfer path Discharging the liquid in the chamber and on the one or more substrates, wherein a certain amount of remaining liquid remains in the fluid transfer path, causing at least a portion of the remaining liquid to be removed from the fluid path by the fluid removal path such that the substrate is not present The portion of the remaining liquid is directly purified and the substrates are dried.

In another aspect, a method of processing one or more microelectronic substrates in accordance with the present invention includes the steps of positioning one or more microelectronic substrates in a processing chamber, via a first fluid transfer path Disposing a liquid stream in the processing chamber and on the one or more substrates, distributing the second liquid stream in the processing chamber and the one or more substrates via a second fluid transfer path, stopping the first liquid flow Distributing such that a certain amount of remaining liquid remains in the first fluid transfer path, purifying the first fluid transfer path into the processing chamber, and simultaneously distributing the second liquid flow, stopping purging the first fluid transfer path Thereafter, the dispensing of the second liquid stream is stopped such that the remaining amount of liquid remains in the second fluid transfer path, and at least a portion of the remaining amount of liquid in the second fluid transfer path is removed by a fluid removal path, The portion of the liquid remaining in the second fluid transfer path is not purified on the substrate.

In another aspect, a spray processor system in accordance with the present invention includes: a processing chamber in which one or more microelectronic substrates can be positioned during processing; a fluid transfer path by which the fluid transfer path will Dispensing fluid on a substrate positioned in the processing chamber; a fluid bypass through which the fluid is deflected away from the fluid transfer path; a first valve coupled to the fluid transfer path and fluid bypass; a fluid The path is removed, the fluid removal path is downstream relative to the fluid bypass when the first valve is in a normal state; and a second valve coupling the fluid removal path to the fluid transfer path. The first valve in a normal state opens to allow fluid to continue to flow through the fluid transfer path and the first valve in a normal state is closed to flow fluid from the fluid transfer path into the fluid bypass, and wherein the first valve is in an actuated state A first valve that is closed to block fluid flow down the fluid transfer path and is in an actuated state is opened to allow fluid to flow from the fluid transfer path to the fluid bypass. The second valve in a normal state is opened to allow fluid to continue to flow through the fluid transfer path and the second valve in a normal state is closed to impede fluid flow from the fluid transfer path into the fluid removal path, and wherein the actuation state is The second valve is opened to allow fluid communication between the fluid removal path and at least a portion of the fluid transfer path, wherein the fluid transfer path is between the second valve and the processing chamber.

The embodiments of the invention described below are not intended to be exhaustive or to limit the invention. Rather, the embodiments of the invention may be understood and understood by those skilled in the art.

Figure 1 shows a representative manner by which the principles of the present invention can be incorporated into a wafer processing system 10 (such as MERCURY available from FSI International, Inc., Chaska, MN). Or ZETA Spray the processor system) to rinse and dry the component parts. These systems are advantageously used to process both 200 mm and 300 mm wafers. In particular, the rinsed and dried component portion can be modified to incorporate a suction function to allow for back-feeding of the liquid (preferably during the transition from the rinse process to the dry process as described below). In addition to this modification of the rinsing and drying component portions as described herein, the system 10 in this illustrative mode of practice may additionally be equated with a commercially available MERCURY. Or ZETA The processor system is sprayed and other well-known component parts of such systems are not shown for clarity.

System 10 includes a spray processor tool 12 that typically includes a housing 14 and a top cover 16 that encloses the chamber 18. Liquid and/or gas may be introduced into the chamber 18 by a spray column 20 that is lowered from the top cover 16. The arrows oriented away from the central spray column 20 and into the chamber 18 schematically indicate the introduction of material by the central spray column 20. The rotatable turntable 24 can be coupled to the motor 34 by a shaft 32 such that the rotatable turntable 24 is rotatable about an axis such as the axis of rotation 32 as indicated by the arrow about the axis of rotation 32. The post 26 extends from the turntable 24 to support one or more carriers 28 that hold one or more wafers (not shown) in the carriers during processing. The rotatable turntable 24 and the one or more posts 26 can provide another path through which liquid and/or liquid can be directed as indicated by the arrow pointing away from the turntable 24 and away from the top of the support post 26 and into the chamber 18. Or a gas is introduced into the chamber 18. The rotating unit 36 can be fluidly coupled to the motor 34 by a coupling 38 and it facilitates the transfer of a rotating environment in which liquid and/or gas is transferred from a supply to the chamber 18. A particularly preferred embodiment of the rotating unit 36 is described in the application entitled "Rotary Unions, Fluid Delivery Systems, and Related Methods" by the assignee in the name of Benson et al. One or more side channel spray posts 22 are positioned in the chamber 18 and provide another path by which the liquid and/or gas can be directed as indicated by the arrow directed away from the side channel spray column and into the chamber 18. Introduced into the chamber 18.

In the particular embodiment shown, the flushing liquid and drying gas can be introduced into the chamber 18 by any of the center spray column 20, the turntable 24/support 26, and/or the side tank spray column 22. Other types of treatment liquids or gaseous treatment chemicals can be conveniently introduced into the chamber 18 via the central spray column 20 via one or more lines that are schematically depicted as other chemical lines 39.

A preferred embodiment of the flushing and drying assembly portion of the suction function will now be described in more detail. Flushing liquid, such as deionized water, is supplied to system 10 via one or more water sources (not shown) via supply line 40. The water is preferably filtered and purified according to good practices in the microelectronics industry. The filtered and purified component portion (not shown) can be incorporated into system 10 and/or it can be external to system 10.

The rinsing liquid can be delivered from the supply line 40 to the center spray column 20 via lines 41a, 41b, and 41c. One or more gases, such as nitrogen, may be supplied to the neutral spray column 20 from a supply source (not shown) via lines 42a and 42b and then via lines 41b and 41c. The flow of liquid and gas through lines 41a, 41b, 41c, 42a and 42b to central spray column 20 can be controlled by valves 44, 46, and 48. The valve 44 shown is generally closed with respect to the gas flow and can be actuated to allow gas to flow from line 42a to 42b. Valve 46 is normally open to allow gas to flow from line 42b to 41b, but its associated liquid flow from lines 41a through 41b is normally closed. When the valve 46 is actuated, liquid can flow through the valve while obstructing gas flow. Valve 48 can control the flow of liquid or gas from line 41b to central spray column 20 via line 41c, or alternatively it can cause the flow of liquid and gas, as the case may be, to deviate to drain 50 via line 53. Valve 48 is normally open to allow fluid to flow from line 41b to 41c. When actuated, valve 48 deflects fluid flowing through check valve 51 via line 53. The check valve 51 can be coupled to one or more other components designed to receive such fluids. As shown, the check valve 51 is coupled to the drain 50 and prevents the flow of liquid (or gas) from flowing back from the drain 50 and into the valve 48.

The flushing liquid can be delivered from the supply line 40 to the side tank spray column 22 via lines 52a, 52b, 52c and 52d. One or more gases, such as nitrogen, may be supplied to the side tank spray column 22 from a supply source (not shown) via lines 56a and 56b and then via lines 52b, 52c and 52d. The gas supply may be the same or different than the supply source that supplies the gas to the central spray column 20. The flow of gas and/or liquid through lines 52b, 52c, and 52d can be offset to aspirator 58 via line 60 or 62, respectively. Fluid may flow from aspirator 58 through line 66 through check valve 64. The check valve 64 can be coupled to one or more other components designed to receive such fluids. As shown, the check valve 64 is coupled to the drain 67 and prevents flow of liquid (or gas) from flowing back from the drain 67 and into the aspirator 58. The drain 67 can be the same or different than the drain 50.

The spray processor system according to the present invention advantageously incorporates a process liquid removal function with respect to at least one fluid supply line to enable removal of at least a portion of the process liquid from the fluid supply without purging the process chamber into the spray processor tool All liquids. Aspirator 58 is a common type of device that uses the principle of the primary effort to help provide this removal function. When a fluid, such as a gas in the case of system 10, is forced through one of the smoothing constrictions in the device, the fluid velocity increases. This will reduce the pressure. In other words, the vacuum established by properly setting valves 72 and 74 can be used to extract or suck back liquid from side slot spray column 22 for transmission to another location, for example, for processing by drain 67. A representative mode of practice thus achieved in the context of sequential processing of rinsing and drying will be further described below.

Many suitable embodiments of aspirator are commercially available from a variety of commercial sources. An illustrative embodiment of an aspirator found to be suitable for use in the practice of the present invention is commercially available from Entegris, Inc., Chaska, MN under the trademark GALTEK Aspirator.

The flow of fluid to the side channel column 22 can be controlled by valves 68, 70, 72 and 74. The valve 68 shown is generally closed with respect to gas flow and is actuated to allow gas to flow from line 56a to valve 70 via line 56b. Valve 70 is normally open to allow gas to flow from line 56b to line 52b, but the liquid associated with flow from line 52a to 52b is normally closed. When the valve 70 is actuated, liquid can flow through the valve 70 while obstructing the flow of gas. Valve 72 can be used to deflect fluid, gas, and/or liquid from line 52b to aspirator 58 via line 60. In its normal state, valve 72 is set such that fluid flows from line 52b to 52c. When valve 72 is actuated, fluid can deviate from line 52b to line 60. Valve 72 includes a damper 76 sufficient to delay return of valve 72 to its normal condition such that any excess gas pressure present in line 56b and/or 52b can be released via aspirator 58 and lines 60 and 66. To the drain 67 is not released into the chamber 18 (discussed below). Depending on how the valve 74 is set, the valve 74 can be used to deflect/draw fluid from the lines 52c and 52d to the aspirator 58 via line 62. In its normal state, valve 74 is set such that fluid flows from line 52c to side channel column 22 via line 52d. When actuated, lines 52c and 52d and side channel spray columns 22 are in fluid communication with line 62 and aspirator 58. Thus, for example, when valves 68, 72, and 74 are actuated together at the same time as schematically depicted by dashed line 86, the gas flowing through a line 72 through lines 72a, 56b, 52b, and 60 to aspirator 58 may be A vacuum or aspiration is created in the lines 52c, 52d and 62 and in the side channel spray column 22. As a result, in the presence of this vacuum action, the liquid in the column 22 and the side tank spray column 22 will be sucked back by the aspirator 58. After the back suction lines 52c, 52d and 62 and the liquid in the side tank spray column 22, the valves 68, 72 and 74 can simultaneously return to their normal state (as depicted by the dashed line 86), subject to buffering. The delay provided by the device 76. The buffer 76 on valve 72 can be set to provide a time delay sufficient to delay return of valve 72 to its normal state such that any excess gas pressure present in line 56b and/or 52b can be via aspirator 58 and line Releases 60 and 66 to the drain 67 are not released into the chamber 18 via lines 52c and 52d and side channel spray posts 22. When valves 72 and 74 return to their normal state, any excessive gas separation pressure in lines 56b and/or 52b via lines 52c and 52d and side channel spray columns 22 will result in lines 52c and/or 52d and The remaining liquid present in the side tank spray column 22 forms a brief burst of mist/suspension particles due to excessive pressure and can drain the remaining liquid into the chamber 18. This is not required because the mist/suspension will contact the dry wafer in chamber 18 and will add particles to the wafer, especially since the drier wafer is more sensitive to mist/suspension particles. The dashed line 86 schematically depicts the valves 68, 72, and 74 being actuated together, and when the valves 68, 72, and 74 return to their normal state, they are subjected to the effect of the buffer 76 delaying the return of the valve 72.

As mentioned, the rotatable turntable 24 and the one or more posts 26 can provide another path through which liquid and/or gas can be introduced into the chamber 18. For example, as shown, flushing liquid is delivered from supply line 40 to turntable 24 and support column 26 via lines 78a and 78b, and one or more gases (such as nitrogen) are via line 80a and 80b and then via line 78b. The supply source (not shown) is supplied to the turntable 24 and the support column 26. The gas supply may be the same or different than the supply of gas to the central spray column 20 and/or the side tank spray column 22. The flow of liquids and gases through lines 78a, 78b, 80a, and 80b to the turntable 24 and support column 26 can be controlled by valves 82 and 84. Valve 82 as shown is generally closed with respect to gas flow and can be actuated to allow gas to flow from line 80a to 80b. Valve 84 is normally open to allow gas to flow from line 80b to line 78b, but its flow associated with liquid from lines 78a through 78b is typically closed. When valve 84 is actuated, liquid can flow through valve 84 while obstructing the flow of gas.

Valves 44, 46, 48, 68, 70, 72, 74, 82, and 84 can be any type of valve or can be a combination of any type of valve such as pneumatic, electronic, and the like. Embodiments of pneumatic control are preferred because they are inherently more reliable when used in harsh environments containing chemicals, chemical fumes, and frequent thorough rinsing. Such pneumatic valves are commercially available from a wide variety of commercial sources such as Entegris, Inc., Chaska, MN and Saint Gobain, San Jose, CA.

The rinsing liquid may be supplied at any suitable supply rate and temperature, as appropriate, such as in accordance with conventional practices, or as described herein, and/or as described in the co-pending application of the applicants incorporated herein by reference. Any one or more of the center spray column 20, the side groove spray column 22, or the turntable 24/support column 26. The flow rate and temperature are dependent on various factors including the nature of the method being implemented, the nature of the wafer being processed, the type of equipment used, and the like. In the case of a commercially available MERCURY or ZETA spray processor system from FSI International, Inc., the general flow rate of the rinse liquid is preferably at any desired temperature (at which temperature the rinse liquid is generally prevented from freezing or Boiling) in the range of 2 liters/minute to 12 liters/minute. Suitable equipment (not shown) for heating or freezing the liquid may be incorporated into system 10 and/or external to system 10 if the liquid is heated and/or frozen.

System 10 allows a defensive function to be applied to side tank spray columns 22 during one or more processing steps. This function is advantageous and preferred during at least a portion of the rinsing process, particularly during the final portion of the rinsing process from the transition from flushing to drying. It has been found that the application of a phlegm function during at least a portion of this transition can advantageously provide very consistent and very neutral results of the addition of particles.

The extent to which particles are added to the wafer after processing is a way in which the effectiveness of a particular processing method can be evaluated.

It is usually necessary to add the number of particles as always as low as possible. Using conventional methodologies, it is difficult to achieve such results except for the use of rinsing liquids at temperatures in relatively narrow ranges. This is especially true with respect to very small added particles (for example, particles having a size of about 90 nm or less). The practice of the present invention greatly improves the effectiveness associated with the addition of particles. This will be further illustrated in the following examples and graphically depicted in Figures 2a, 2b, 3a and 3b discussed below.

As illustrated with respect to system 10 in FIG. 1, an aspirator device is only incorporated into the waveguide leading to side channel spray column 22 to provide a suckback capability associated with side channel spray column 22. In an alternate embodiment, in addition to or in lieu of providing the back suction capability associated with the side channel spray column 22, a similar inverse may be provided in relation to the waveguide leading to the center post 20 and/or the turntable 24/support column 26. Suction ability.

A representative mode of practicing the invention using the system 10 of Figure 1 will now be described in which this suckback function is practiced during the transition from self-flushing to drying. In the first stage, a typical flushing and drying sequence will involve setting valves 44, 46, 48, 68, 70, 72, 74, 82, and 84 to spray the column 22 by the center post 20, side slots, and as appropriate A turntable 24/support 26 is used to dispense the rinsing liquid onto the wafer. In particular, valves 46, 70 and 84 are actuated and the other valves are in their normal state. The aqueous rinse liquid can be at a temperature in the range of from 0 °C to about 100 °C. Other types of rinse liquids can generally be at temperatures above the freezing point but below the boiling point. The typical flow rate of the rinse liquid through the center spray column 20 is in the range of 5 to 8 liters per minute (1 pm). The typical flow rate of the rinse liquid through the side tank spray column 22 is in the range of 8 to 13 lpm. The typical flow rate of the rinsing liquid through the turntable 24 and the support 26 is in the range of 8 to 13 lpm (the rinsing liquid, and its flow rate are supplied together to the turntable 24 and the support column 26). The turntable 24 can be rotated during one or more of the range of 5 rpm to 500 rpm during this flush. Flushing in this manner can continue for any desired time interval, such as 30 seconds to 10 minutes.

In the next stage, the purification center sprays the column 20, the turntable 24, and the support 26 while continuing to wet the wafer by the side groove spray column 22. Valve 44 is actuated and valves 46 and 48 are in their normal state such that pressurized purge gas purges the remaining liquid from line 41b and 41c and central spray column 20 into processing chamber 18. Valve 82 is actuated and valve 84 is in its normal state such that pressurized purge gas purges the remaining liquid from line 78b, turntable 24 and support 26 into processing chamber 18. Because the rinsing liquid flowing through the side-slot spray column 22 wets the wafer well, the risk of cleaning causing undue water contamination on the wafer surface is greatly minimized.

Various purification gases can be used. Representative examples include: nitrogen, carbon dioxide, combinations thereof, and the like. The purge gas can typically be supplied at a flow rate of 2 to 10 scfm at a temperature of 20 to 30 ° C at a pressure of 10 to 40 psi.

In the next stage, the purification of the entire center spray column 20, the turntable 24, and the support 26 is stopped while the rinsing liquid continues to flow through the side tank spray column 22. This can be achieved by causing valves 44, 46 and 48 to be in their normal state such that no gas or liquid flows to central spray column 20 and by causing valves 82 and 84 to be in their normal state, no gas or liquid can flow through turntable 24 and support Column 26 is completed. This phase preferably continues for a short time interval, for example from 1 to 20 seconds, such that there is a short delay between this phase and the next phase. Longer time intervals can be used if needed (eg, if buffer time is used to complete other processing tasks), but longer delays can unnecessarily lengthen the cycle time.

In the next stage, the flushing liquid is stopped flowing through the side tank spray column 22 and suction occurs to suck back and direct the remaining flushing liquid to the drain 67. To accomplish this, valves 68, 72, and 74 are actuated while valve 70 is in its normal state. As a result, the liquid is stopped from flowing through the side tank spray column 22. Preferably, this flow is practically stopped as quickly as possible when water stains occur, and thus the added particles tend to increase as the stop time increases. In addition, the purge gas flows through the line 56a, the line 56b, the line 52b, the line 60, the aspirator 58, the line 66, the check valve 64, and flows into the drain 67. This creates a vacuum in the side tank spray column 22, line 52c, line 52d, and line 62 that helps to remove residual liquid to the drain 67.

It is now in the dry phase. Any suitable method of drying one or more wafers in the processor may be used at this point, such as by, for example, rotating the wafer in the chamber 18 and, as appropriate, simultaneously discharging the drying gas into the chamber 18. (For example, applying a dry gas directly to the surface of the wafer). For example, the drying phase may involve setting valves 44, 46, 48, 68, 70, 72, 74, 82, and 84 to one of the center column 20, the side channel spray column 22, and the turntable 24/support 26 or Many are used to distribute dry gas on the wafer. In particular, valves 46, 48, 70, 72, 74 and 84 are in their normal state (ie, not actuated) and valves 44, 68 and 82 are in their normal state (note: during this drying phase, the valves 72 and 74, as in the purge stage described above, are not actuated with valve 68 to actuate valves 72 and 74). Various drying gases can be used. Representative examples include: air, nitrogen, carbon dioxide, argon, isopropanol, combinations thereof, and the like. The dry gas may be supplied at a flow rate of 2 to 10 scfm at a temperature of 20 to 30 ° C at a pressure of 10 to 40 psi.

Also, as mentioned, spin drying can be used alone or in combination with the application of dry gas. For example, spin drying can involve rotating the turntable 24 at one or more speeds ranging from 5 rpm to 500 rpm while passing through one of the center post 20, the side slot spray column 22, and the turntable 24/support 26 or Many are used to distribute dry gas on the wafer. Drying in this manner can continue for any desired time interval, such as about 5 minutes.

The invention will now be further described with respect to the following illustrative examples.

Method for comparing example A and examples 1-3

A new, 300 mm, bare test wafer can be used in Comparative Example A and Examples 1-3. The wafer is first removed from its shipping container and loaded into the FOUP, which is used to transfer the test wafer into the clean room. The FOUP includes a total of 25 wafer slots. The test wafer is loaded into slots 1, 13 and 25 to simulate wafer filling of the remaining 22 slots. Once the wafer is moved into the FOUP, the non-simulated analysis is performed by measuring a defect on the wafer using a non-patterned wafer inspection tool commercially available from KLA Tencor, San Jose, CA, Model SP1-TBI. Wafer test wafer. After the programmed wafer inspection tool detects three of the test wafers 1, 13, and 25, the FOUP can be moved into the wafer inspection tool, one for each test wafer (slots 1, 13, and 25) Wafers are removed and analyzed from their respective slots. After the test wafer is removed from the FOUP, it is moved into a scanning chamber in the inspection tool where the laser scans for defects in the wafer. This method system can report the location and size of any defects on the wafer surface. This report is termed as "pre-counting" defects before processing each test wafer. After scanning, the FOUP including the wafer can be loaded on the ZETA for processing Spray the processor. ZETA The spray processor transfers 25 wafers from the FOUP to a wafer processing wafer with 27 wafer slots. Two additional wafer slots provide slots for the wafer at the top and bottom of the wafer. The reason for this is to ensure that each test wafer has at least one wafer above it and at least one wafer underneath it while being processed. Due to the automated technology within the material processing system, the order of the wafers is reversed when the wafer is moved from the FOUP into the processing wafer. Thus, the wafer from slot 1 in the FOUP will be placed in slot 26 in the processing wafer, wafer 13 will be transferred to slot 14 and wafer 25 will be transferred to slot 2. Spray processors also require the turntable to be balanced to reduce potential vibration when rotating the wafer. This balance can be achieved by placing another wafer on the rotating turntable opposite the first wafer. Because only 25 wafers are from the FOUP, the remaining two slots can carry the simulated wafers stored in the material handling system. Once the two wafers are loaded into the processing chamber, a total of 54 wafers are separated between the two processing wafers, including three of the wafers. Now, the wafer is ready for commercial use in ZETA from FSI International, Inc., Chaska, MN. The spray processor is subjected to a processing method.

The treatment method for treating the wafers of Comparative Example A and Examples 1-3 is referred to as an after-ash cleaning method having a two-step chemical step isolated by the rinsing step. The second chemical step is followed by the final rinse/drying step. The first chemical step involves a treatment liquid of a mixture of sulfuric acid and hydrogen peroxide. This treatment liquid is often referred to as "piranha" treatment. The ratio of these chemicals is 4 parts of sulfuric acid and 1 part of hydrogen peroxide. When mixed, these two chemicals produce an exothermic reaction that heats the solution to about 80 °C. This solution was dispensed onto the wafer in the processing chamber (which was rotating at 60 rpm). The mixture was dispensed at a flow rate of about one (1) lpm for 240 seconds. After the "piranha" treatment, the wafers, chambers, and waveguides are rinsed and cleaned with various combinations of hot DI water at about 95 °C, cold DI water at about 17-23 °C, and nitrogen. The purpose of this flushing is to completely remove any traces of "piranha" chemicals from the system prior to dispensing the next chemical. The final chemical step involves a treatment liquid that is a mixture of ammonium hydroxide, hydrogen peroxide, and DI water. This chemical step is often referred to as "SC1" cleaning. The SC1 mixture was dispensed at a total flow rate of about 2 liters per minute and at a temperature of about 55 °C. The mixture can be dispensed onto a wafer in the processing chamber (which is rotating at a speed in the range of 20 to 300 rpm). The total chemical exposure time in the SC1 step was about 235 seconds. The chemical diluent used in the SC1 mixture is typically 1 part ammonium hydroxide, 2 parts hydrogen peroxide and 42 parts DI water. When the SC1 chemical step is completed, the wafer will undergo a final rinse/drying step. Comparative Example A and Examples 1-3 differ from each other only in how the final rinse/drying step is performed in each instance. In general, wafers, waveguides, and chambers are rinsed and cleaned with various combinations of hot DI water, cold DI water, and nitrogen during the final rinse/dry step. At the end of the final rinse/drying step, the DI water is completely removed from the wafer, waveguide and chamber so that it is completely dry. This is done by properly turning off the DI flush function and at ZETA This is done by turning on the nitrogen function in the high speed drying mode of the spray processor. The transition between rinsing and drying during the final rinsing/drying steps of Comparative Example A and Examples 1-3 is described in detail below. In general, at ZETA During the final drying phase of the spray processor, nitrogen is dispensed by a turntable/column (ie, "chamber drying" hole) and a central spray column (central atomizing hole and left side hole (ie, "wafer drying" hole) During the final drying phase, the wafer, the waveguide, and the processing chamber are dried as the wafer is rotated at approximately 300 rpm for 5 minutes. Installed on ZETA The RTD on the sidewall of the processor is sprayed to measure the final wafer temperature.

After the final drying is complete, the wafer is removed from the processing chamber and then moved back into the FOUP. Next, the test wafers in slots 1, 13, and 25 can be analyzed again by measuring defects on the wafer using a non-patterned wafer inspection tool. This method systematically scans the wafer and reports the location and size of any defects on the wafer surface. This report can be termed as "post-count" of defects after processing each test wafer.

The data collected for each wafer (ie, pre-calculated and post-calculated) can be expressed as a "real additive" value and an "incremental" value. The "real additive" value can be obtained by calculating the number of defects reported in the "post-calculation" performed at a new location on the wafer surface that is not observed in the "pre-computed" report. For example, assume that there are two defects at the position where the X-Y coordinates are 1, 1, and 2, 2 on the wafer surface in "pre-calculation". If there are 3 defects at the position of the X-Y coordinates 1, 1, 3, 3 and 4, 4 on the wafer surface in "post-calculation", there is a new position not reported in "pre-calculation" There are 2 defects reported in the "post-calculation". Thus, the "real additive" value for this data will be 2.

The "incremental" value is obtained by subtracting the "pre-calculated" value from the "post-calculation" value reported for each test wafer. For example, if a test wafer has a "pre-calculated" value of 100 and a "post-calculation" value of 90, the wafer has an "incremental" value of -10.

Control example A

For Comparative Example A, three test wafers can be used per run to perform 48 processing runs (ie, a total of 144 test wafers). The wafer is subjected to a conventional final rinse/drying step during each processing run and after the wafer is subjected to the SC1 chemical step as described above. Conventional rinsing/drying steps include dispensing cold DI water (about 20 ° C) onto the wafer by means of a central spray column and a side channel spray column. The DI water flow rate through the central spray column is between about 6 and 10 lpm (typically about 8 lpm) and the flow rate through the side trough is about 10 lpm. The wafer is rotated on the turntable at approximately 60 rpm. The DI water dispensed by the central spray column can be atomized by 3 cfm of nitrogen at ambient temperature and a pressure of about 30-35 psi. Nitrogen can also be distributed by "chamber drying" holes. This flush (ie, dispensing DI water) will continue for 30 seconds.

After the dispensing of DI water is terminated, the rotational speed of the turntable will be slowed down to 10 rpm. The DI water supply line leading to the "wafer drying" holes (i.e., the left side holes) of the center spray column and the side groove spray column was purged in the chamber using nitrogen gas for 90 seconds. Nitrogen can also be distributed by "chamber drying" holes. After 90 seconds of purification, the speed of the turntable will increase to 300 rpm for 5 minutes. During this 5 minute period, the wafer and chamber will become dry. At the end of the final drying stage, the temperature of the wafer is about 5 ° C above ambient temperature, or 23 ° C.

The pre-calculated and post-calculated data of Comparative Example A is illustrated in Figures 2a, 2b, 3a and 3b. In Figure 2a, the data on the left side of line 210 shows "real additives" for sizes greater than 65 nm for 48 test runs (the average of three test wafers in slots 1, 13, and 25 for each run) Addition ").

In Figure 2b, the data on the left side of line 220 shows the range of "real additive" values for any three test wafers in each run. For example, if a wafer is added with -20, 25, and 100 particles, the range will be 120.

The data on the left side of line 310 in Figure 3a shows the "incremental" of defects in each run that are larger than 65 nanometers in size. The data on the left side of line 320 in Figure 3b shows the range of "incremental" values for any three test wafers in each run.

This conventional final rinse/dry data shows a significant range of particles added.

Example 1

The wafer can be subjected to a final rinse/drying step in accordance with the present invention for each process run and after the wafer is subjected to the SCI chemical step as described above. A 30 second rinse (i.e., dispensing DI water) in the final rinse/drying step of Comparative Example A was performed in Example 1, except that the temperature of the rinsed water was low. The transition between the final rinse and the final dry was different from the transition in Comparative Example A. At the end of 30 seconds, the turntable continues at 60 rpm when nitrogen is used to purify the DI water supply line to the "wafer drying" hole (ie, the left side hole) of the center spray column in the chamber for 85 seconds. Rotate and continue to dispense DI water from the side tank spray column. Nitrogen can also be distributed by "chamber drying" holes. After purging for 85 seconds, the rotational speed of the turntable is slowed to 10 rpm and the DI water supply line leading to the side tank spray column can be pumped to remove the remaining DI water in the supply line (ie, no purge into the processing chamber) The DI water supply line to the side tank spray column). After pumping the side slot spray column, the turntable speed was increased to 300 rpm for 15 minutes. During this 15 minute period, the wafer and chamber will become dry. At the end of the final drying stage, the temperature of the wafer is about the same as the temperature of the cold DI supplied to the system, which can vary between 17 ° C and 21 ° C.

Example 2

The wafer is subjected to a final rinse/drying step in accordance with the present invention for each process run and after the wafer is subjected to the SC1 chemical step as described above. A 30 second rinse (i.e., dispensing DI water) in the final rinse/drying step of Comparative Example A was performed in Example 2. The transition between the final rinse and the final dry was different from the transition in Comparative Example A. At the end of 30 seconds, the turntable continues at 60 rpm when nitrogen is used to purify the DI water supply line to the "wafer drying" hole (ie, the left side hole) of the center spray column in the chamber for 85 seconds. Rotate and continue to dispense DI water from the side tank spray column. Nitrogen can also be dispensed by "chamber drying" holes. After purging for 85 seconds, the rotational speed of the turntable is slowed to 10 rpm and the DI water supply line leading to the side tank spray column is pumped to remove the remaining DI water in the supply line (ie, not cleaned into the processing chamber) DI water supply line leading to the side tank spray column). After pumping the side slot spray column, the speed of the turntable was increased to 300 rpm for 5 minutes. During this 5 minute period, the wafer and chamber will become dry. At the end of the final drying stage, the temperature of the wafer is approximately 5 ° C above ambient temperature, or 23 ° C.

Example 3

The wafer is subjected to a final rinse/drying step in accordance with the present invention for each process run and after the wafer is subjected to the SC1 chemical step as described above. A 30 second rinse (i.e., dispensing DI water) in the final rinse/drying step of Comparative Example A was performed in Example 3, except that the temperature of the rinsed water was higher. The transition between the final rinse and the final dry was different from the transition in Comparative Example A. At the end of 30 seconds, the turntable continues at 60 rpm when nitrogen is used to purify the DI water supply line to the "wafer drying" hole (ie, the left side hole) of the center spray column in the chamber for 85 seconds. Rotate and continue to dispense DI water from the side tank spray column. Nitrogen holes can also be dispensed by "chamber drying." After purging for 85 seconds, the rotational speed of the turntable is slowed to 10 rpm and the DI water supply line leading to the side tank spray column is pumped to remove the remaining DI water in the supply line (ie, not cleaned into the processing chamber) DI water supply line leading to the side tank spray column). After pumping the side tank spray column, the speed of the turntable was increased to 300 rpm for 1 minute. During this 1 minute period, the wafer and chamber will become dry. The temperature of the wafer at the end of the final drying stage is significantly higher than the ambient temperature by using rinse water having a temperature of up to about 95 °C.

The pre-calculated and post-calculated data for Examples 1-3 are illustrated in Figures 2a, 2b, 3a and 3b. In Figure 2a, the data on the right side of line 210 shows the "real additions" for the run in Examples 1-3 that are larger than 65 nm (each run is three test wafers in slots 1, 13, and 25). Average "real additive").

In Figure 2b, the data to the right of line 220 shows the range of "true additive" values for any three test wafers in each run in Examples 1-3.

In Figure 3a, the data on the right side of line 310 shows the "incremental" of defects in each of the running examples having dimensions greater than 65 nm in Examples 1-3. In Figure 3b, the data to the right of line 320 shows the range of "incremental" values for any three test wafers in each run in Examples 1-3.

The data for Examples 1-3 demonstrate the improved performance associated with the addition of particles and the flexibility of the temperature of the rinse water when using the final rinse/drying hardware and procedure in accordance with the present invention.

Other embodiments of the invention will be apparent to those skilled in the <RTIgt; Various modifications, changes and variations of the principles and embodiments described herein may be made by those skilled in the art without departing from the scope of the invention.

10. . . Wafer processing system

12. . . Spray processor tool

14. . . shell

16. . . Top cover

18. . . Chamber

20. . . Center spray column

twenty two. . . Side groove spray column

twenty four. . . Turntable

26. . . Support column

28. . . Carrier

32. . . Rotating shaft

34. . . motor

36. . . Rotating unit

39. . . Chemical pipeline

40. . . Supply pipeline

41a, 41b, 41c, 42a, 42b, 52a, 52b, 52c, 52d, 56a, 56b, 60, 62, 66, 78a, 78b, 80a, 80b. . . Pipeline

44, 46, 48, 68, 70, 72, 74, 82, 84. . . valve

50, 67. . . Bungee

51, 64. . . Check valve

58. . . Aspirator

76. . . buffer

86. . . dotted line

Figure 1 illustrates a schematic of a spray processor tool in accordance with the present invention.

Figure 2a shows a graph representing "real additives" having a size greater than 65 nm in Comparative Example A and Examples 1-3.

Figure 2b shows a graph representing the range of "true additives" for sizes greater than 65 nanometers for any of the three test wafers in each run in Comparative Example A and Examples 1-3.

Figure 3a shows a graph representing "incremental" for defects in each run size greater than 65 nm in Comparative Example A and Examples 1-3.

Figure 3b shows a graph representing the range of "incremental" values for any of the three test wafers in each run in Comparative Example A and Examples 1-3.

10. . . Wafer processing system

12. . . Spray processor tool

14. . . shell

16. . . Top cover

18. . . Chamber

20. . . Center spray column

twenty two. . . Side groove spray column

twenty four. . . Turntable

26. . . Support column

28. . . Carrier

32. . . Rotating shaft

34. . . motor

36. . . Rotating unit

39. . . Chemical pipeline

40. . . Supply pipeline

41a, 41b, 41c, 42a, 42b, 52a, 52b, 52c, 52d, 56a, 56b, 60, 62, 66, 78a, 78b, 80a, 80b. . . Pipeline

44, 46, 48, 68, 70, 72, 74, 82, 84. . . valve

50, 67. . . Bungee

51, 64. . . Check valve

58. . . Aspirator

76. . . buffer

86. . . dotted line

Claims (11)

A method of processing one or more microelectronic substrates, the method comprising the steps of: positioning one or more microelectronic substrates in a processing chamber; distributing a first liquid stream to the first fluid transfer path Disposing a second liquid stream in the processing chamber and the substrate or the substrates via a second fluid transfer path, wherein the first fluid transfer path and the first The two fluid transfer paths are not the same fluid transfer path; the first liquid flow is stopped being dispensed, wherein a certain amount of remaining liquid remains in the first fluid transfer path; when the second liquid flow is dispensed, the purge passes into the processing chamber The first fluid transfer path in the chamber; after stopping purging the first fluid transfer path, stopping dispensing the second liquid flow, wherein a remaining amount of liquid remains in the second fluid transfer path; and by a fluid Removing a path to remove at least a portion of the remaining amount of liquid in the second fluid transfer path without purging the second fluid transfer path on the one or more microelectronic substrates The portion of the remaining amount of liquid. The method of claim 1, wherein the liquid flows through the first and second fluid transfer paths, and comprises an aqueous solution rinsing liquid having a temperature ranging from 60 ° C to 100 ° C. The method of claim 1, wherein the one or more substrate systems are positioned in a spin Turning on the turntable and further including the step of rotating the rotatable turntable during the dispensing steps. The method of claim 1, wherein the one or more substrates are positioned on a rotatable turntable, and further comprising rotating the rotatable turntable when the first fluid transfer path is purged into the processing chamber step. The method of claim 1, after the removing step, further comprising drying the one or more substrates by spin drying, and discharging a dry gas into the processing chamber via the first and second fluid transfer paths step. The method of claim 5, after the drying step, further comprising the step of removing the one or more substrates from the processing chamber. The method of claim 1, further comprising the step of causing a third liquid to flow into the processing chamber through a third fluid transfer path and distributing the one or more substrates, wherein the first liquid flow stops At the time, the third liquid flow is stopped, and a certain amount of remaining liquid remains in the third fluid transfer path, wherein when the second liquid flow is distributed, the third fluid transfer path is purged into the processing chamber And stopping the step of dispensing the second liquid stream after the second fluid transfer path purification is stopped. The method of claim 1, wherein the removing step comprises sucking back the portion of the remaining amount of liquid. A method of processing one or more microelectronic substrates, comprising the steps of: positioning the one or more microelectronic substrates in a processing chamber; and rinsing the first liquid stream via a first fluid transfer path One or more electronic substrates; after the flushing, causing a second liquid to flow from a second fluid transfer path And being distributed to wet the one or more substrates, wherein the first fluid transfer path and the second fluid transfer path are not the same fluid transfer path; stopping spraying the first liquid stream, wherein a certain amount of remaining liquid remains in the In the first fluid transfer path; purifying the remaining liquid remaining in the first fluid transfer path into the processing chamber when the second liquid flow is dispensed; after the purging, stopping dispensing the second liquid flow and A quantity of remaining liquid in the second fluid transfer path is drawn from the second flow transfer body path; and after the pumping, the one or more substrates are dried. The method of claim 9, wherein the one or more substrates are positioned on a rotatable turntable, and further comprising when a remaining amount of liquid in the first fluid transfer path is purified into the processing chamber, The step of rotating the rotatable turntable. The method of claim 9, wherein during the rinsing and purging, the liquid flows through the first fluid path and the drawn second fluid path, and comprises an aqueous solution rinsing liquid having a temperature ranging from 60 ° C to 100 ° C.