TWI393177B - System and method for carrying out liquid and subsequent drying treatments on one or more wafers - Google Patents
System and method for carrying out liquid and subsequent drying treatments on one or more wafers Download PDFInfo
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- TWI393177B TWI393177B TW094119071A TW94119071A TWI393177B TW I393177 B TWI393177 B TW I393177B TW 094119071 A TW094119071 A TW 094119071A TW 94119071 A TW94119071 A TW 94119071A TW I393177 B TWI393177 B TW I393177B
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- 239000007788 liquid Substances 0.000 title claims description 155
- 238000001035 drying Methods 0.000 title claims description 74
- 238000000034 method Methods 0.000 title claims description 51
- 235000012431 wafers Nutrition 0.000 title description 162
- 238000011282 treatment Methods 0.000 title description 18
- 239000012530 fluid Substances 0.000 claims description 117
- 238000012545 processing Methods 0.000 claims description 95
- 238000012546 transfer Methods 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 36
- 238000010926 purge Methods 0.000 claims description 25
- 238000004377 microelectronic Methods 0.000 claims description 20
- 238000011010 flushing procedure Methods 0.000 claims description 18
- 238000000746 purification Methods 0.000 claims description 15
- 238000005086 pumping Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims 2
- 239000007921 spray Substances 0.000 description 100
- 239000007789 gas Substances 0.000 description 55
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Solid Materials (AREA)
Description
本發明係關於一種使用噴灑處理器工具來製造微電子裝置的技術。更特定言之,本發明係關於包括多個態樣之方法,在該等態樣中,可使用一噴灑處理器工具將一或多個裝置前驅物與液體(例如,尤其為沖洗液體)接觸並隨後乾燥該等前驅物。The present invention relates to a technique for fabricating a microelectronic device using a spray processor tool. More particularly, the present invention relates to a method comprising a plurality of aspects in which one or more device precursors can be contacted with a liquid (eg, particularly a rinse liquid) using a spray processor tool The precursors are then dried.
微電子產業在製造各種微電子裝置過程中依賴各種濕式/乾燥處理配方。微電子產業可利用各種經組態之系統實行該等濕式/乾燥處理。許多此等系統可以噴灑處理器工具之形式。噴灑處理器工具一般係指一種工具,其中在在一系列一或多個步驟中將一或多種處理化學藥品、沖洗液體及/或氣體單一地或以其組合而噴灑於一或多個晶圓之上。此與在處理過程期間將晶圓浸入流體槽中之濕式清洗台工具形成對比。在典型的噴灑處理器工具中,可將流體噴灑於晶圓上,同時將晶圓支撐於一旋轉壓板(諸如一轉盤、夾盤等)之上。噴灑處理器系統之實例包括可自FSI International,Inc.,Chaska,MN購得之MERCURY或ZETA噴灑處理器系統、可自Semitool,Inc.,Kalispell,Montana購得之SCEPTERT M 或SPECTRUM噴灑處理器系統、可自SEZ AG,Villach,Austria購得並以SEZ 323為商標售賣的噴灑處理器系統等。The microelectronics industry relies on a variety of wet/dry processing formulations in the manufacture of various microelectronic devices. The microelectronics industry can perform such wet/drying processes using a variety of configured systems. Many of these systems can be in the form of spray processor tools. A spray processor tool generally refers to a tool in which one or more processing chemicals, rinsing liquids, and/or gases are sprayed onto one or more wafers, either singly or in combination, in a series of one or more steps. Above. This is in contrast to the wet cleaning station tool that immerses the wafer in the fluid bath during the process. In a typical spray processor tool, fluid can be sprayed onto the wafer while the wafer is supported on a rotating platen (such as a turntable, chuck, etc.). Examples of spray processor systems include MERCURY available from FSI International, Inc., Chaska, MN. Or ZETA Spray processor system, SCEPTER T M or SPECTRUM available from Semitool, Inc., Kalispell, Montana Spray processor system, spray processor system available from SEZ AG, Villach, Austria and sold under the trademark SEZ 323.
噴灑處理器工具之典型的配方可包括涉及使晶圓首先經受一或多個濕式處理(例如,化學處理及/或沖洗處理),然後在其後乾燥晶圓的處理步驟。舉例而言,習知之沖洗/乾燥順序可涉及首先將沖洗液體噴灑在支撐於處理腔室中之旋轉轉盤上的晶圓堆叠上。停止沖洗且然後淨化通入處理腔室之用於傳遞沖洗液體之波導管。然後可藉由相同或不同之波導管將乾燥氣體引入腔室中以乾燥晶圓。A typical formulation for a spray processor tool can include a processing step involving first subjecting the wafer to one or more wet processing (eg, chemical processing and/or rinsing) followed by drying the wafer thereafter. For example, conventional rinsing/drying sequences may involve first spraying a rinsing liquid onto a stack of wafers supported on a rotating carousel in a processing chamber. The flushing is stopped and the waveguide that passes into the processing chamber for delivering the flushing liquid is then purged. The dry gas can then be introduced into the chamber by the same or different waveguides to dry the wafer.
評估一特定處理配方之有效性的一種方式為藉由在根據處理配方之處理後量測添加至晶圓中的顆粒程度來進行評估。一般需要添加顆粒的數目(即,添加顆粒=處理配方之後所量測之顆粒-處理配方之前所量測之顆粒)始終為盡可能低的。One way to assess the effectiveness of a particular processing recipe is to evaluate by measuring the extent of particles added to the wafer after processing according to the processing recipe. It is generally desirable to add the number of granules (i.e., the addition of granules = granules measured after treatment of the formulation - granules measured prior to treatment of the formulation) is always as low as possible.
一些處理配方僅可在處理參數相對狹小的範圍內相關於添加顆粒而執行良好。舉例而言,僅當沖洗液體在一特定溫度範圍(例如,適度溫暖)內時,可實踐一習知之沖洗/乾燥配方以產生始終低的添加顆粒。但是,若沖洗液體處於此範圍之外的溫度時(例如,若沖洗液體係冷的或熱的),則此相同之配方會遭受過高及/或不一致的添加顆粒。此溫度約束可限制此配方之實際利用。舉例而言,可另外需要能够使用非常熱之沖洗液體來降低循環時間,因為較熱之液體將更快地沖洗晶圓並更快地使其乾燥。另外,可另外需要能够使用非常冷之沖洗液體來處理溫度敏感基板。簡而言之,習知之沖洗/乾燥順序可傾向於相關於添加顆粒而對溫度過度敏感,其通常以處理之靈活性為代價。Some treatment formulations can only perform well with respect to the addition of particles in a relatively narrow range of processing parameters. For example, a conventional rinsing/drying formulation can be practiced to produce consistently low added granules only when the rinsing liquid is within a particular temperature range (eg, moderate warmth). However, if the rinsing liquid is at a temperature outside this range (for example, if the rinsing liquid system is cold or hot), the same formulation may suffer from excessive and/or inconsistent added particles. This temperature constraint limits the practical use of this formulation. For example, it may be additionally desirable to be able to use a very hot rinse liquid to reduce cycle time as the hotter liquid will rinse the wafer faster and dry it more quickly. In addition, it may be additionally desirable to be able to process temperature sensitive substrates using very cold rinse liquids. In short, conventional rinsing/drying sequences may tend to be overly sensitive to temperature in relation to the addition of particles, which typically comes at the expense of processing flexibility.
隨著微電子裝置部件變得越來越小,添加顆粒上之尺寸約束將變得更嚴格。舉例而言,對較大尺寸之部件而言,監控尺寸大於150 nm(此規格通常被稱作為"顆粒>150 nm"或其它類似參考)的添加顆粒足以幫助確保可接受之裝置品質。然而,對較小之部件而言,會需要監控顆粒>90 nm,或>65 nm,或甚至更小之添加顆粒。一些習知之沖洗/乾燥順序以較不嚴格之監控可執行良好,但當監控較小之添加顆粒時,其執行地不如需要的那般好。As microelectronic device components become smaller and smaller, the size constraints on the added particles will become more stringent. For example, for larger sized parts, the addition of particles with a monitor size greater than 150 nm (this size is often referred to as "particles > 150 nm" or other similar references) is sufficient to help ensure acceptable device quality. However, for smaller parts, it may be necessary to monitor particles >90 nm, or >65 nm, or even smaller particles. Some conventional rinsing/drying sequences perform well with less stringent monitoring, but when monitoring smaller added granules, they perform less well than needed.
因此,在微電子產業中不斷需要以始終較低之添加顆粒實行濕式/乾燥處理配方。詳言之,此領域不斷需要可提供對溫度較不敏感的及/或甚至當施加更嚴格之監控標準時(例如,諸如>90 nm,>65 nm等之標準)可提供較低添加顆粒的方法。Therefore, there is a continuing need in the microelectronics industry to implement wet/dry processing formulations with always lower added granules. In particular, there is a continuing need in the art to provide methods that are less sensitive to temperature and/or even when more stringent monitoring standards are applied (eg, standards such as >90 nm, >65 nm, etc.) to provide lower added particles. .
本發明提供一種當處理一或多個晶圓時,用於實行一定順序之一或多種濕式液體處理(尤其為沖洗)及隨後進行乾燥處理的改良技術。更詳而言之,本發明提供一種可以一明顯降低可能在較習知之濕式/乾燥順序後另外觀察到之添加顆粒的方式將濕式處理過渡至乾燥處理的改良方式。本發明認為此過渡特徵可顯著影響添加顆粒的效能。The present invention provides an improved technique for performing one or more wet liquid processing (especially flushing) and subsequent drying processing in a sequence when processing one or more wafers. More particularly, the present invention provides an improved manner in which the wet process can be transitioned to a drying process in a manner that significantly reduces the additional particles that may be observed after the more conventional wet/drying sequence. The present invention recognizes that this transitional feature can significantly affect the effectiveness of the added particles.
本發明尤其用於在一噴灑處理器工具中實行沖洗/乾燥配方。至少可最有利地實踐本發明以實行實踐於噴灑處理器工具中之最終沖洗處理與隨後之乾燥處理之間的過渡,其後可自該工具移除晶圓。事實上,當在本發明之噴灑處理器工具中使用單獨的沖洗/乾燥處理時,我們可在300毫米(mm)之晶圓上獲得尺寸大於65奈米(nm)之顆粒的非常中性之添加顆粒的數據。參閱圖2a,圖2b,圖3a及圖3b,將在下文對說明此之數據作進一步論述。The invention is particularly useful for practicing a rinse/dry formulation in a spray processor tool. The present invention is at least most advantageously practiced to practice a transition between a final rinse process practiced in a spray processor tool and a subsequent drying process, after which the wafer can be removed from the tool. In fact, when using a separate rinsing/drying process in the spray processor tool of the present invention, we can achieve very neutral sizes of particles larger than 65 nanometers (nm) on a 300 mm (mm) wafer. Add data for the particles. Referring to Figures 2a, 2b, 3a and 3b, the data illustrating this will be further discussed below.
關於添加顆粒之明顯的改良效能並非為所觀察到之唯一益處。我們亦已觀察到在添加顆粒方面的處理效能對沖洗液體之溫度相對不敏感的顯著益處。意即,不論沖洗液體之溫度為冷,環境溫度,溫暖,或者為熱,皆可獲得與添加顆粒相關的改良效能。在任何所需溫度下(其中沖洗媒體係以未不當增加添加顆粒之液體形式存在的)實用地實踐沖洗之能力可提供與多種沖洗及乾燥配方相關的巨大靈活性,該等多種沖洗及乾燥方法亦可用於所處理之多種晶圓。此優勢與傾向於僅在溫度之相對狹小之範圍內為沖洗液體提供最佳效能的更習知之方法學形成明顯對比。The apparent improved performance with respect to the addition of granules is not the only benefit observed. We have also observed a significant benefit of the relatively insensitive sensitivity of the treatment efficiency in the addition of granules to the temperature of the rinsing liquid. That is, regardless of whether the temperature of the rinsing liquid is cold, ambient temperature, warmth, or heat, improved performance associated with the addition of particles can be obtained. The ability to practically perform rinsing at any desired temperature, where the rinsing medium is in the form of a liquid that does not improperly increase the addition of granules, provides great flexibility associated with a variety of rinsing and drying formulations, such rinsing and drying methods It can also be used for a variety of wafers processed. This advantage is in sharp contrast to the more conventional methodology that tends to provide optimal performance for rinsing liquids only in the relatively narrow range of temperatures.
在某些實施例中可藉由能以熱沖洗液體(如,60℃至100℃)沖洗來達成較快的循環時間,而無使用熱液體將導致過多增加添加顆粒的不當風險。很簡單地,較熱之沖洗液體傾向於更快地蒸發且以較熱之液體沖洗之晶圓與以較冷之液體沖洗之晶圓相比可更快地乾燥。另外,可使用較熱之沖洗液體加熱處理腔室,其可降低乾燥晶圓及腔室所需要的時間。舉例而言,涉及使用溫水(35℃)之特定方法需要400秒(6.7分鐘)的乾燥時間。使用熱沖洗水(85℃),此乾燥時間可顯著減少4.5分鐘,同時仍提供非常中性的添加顆粒。In some embodiments, faster cycle times can be achieved by flushing with a hot rinse liquid (e.g., 60 ° C to 100 ° C), without the use of hot liquids which would result in an excessive increase in the undue risk of added particles. Quite simply, the hotter rinse liquid tends to evaporate faster and the wafer flushed with the hotter liquid dries faster than the wafer rinsed with the cooler liquid. Additionally, the processing chamber can be heated using a hotter rinsing liquid that reduces the time required to dry the wafer and chamber. For example, a specific method involving the use of warm water (35 ° C) requires a drying time of 400 seconds (6.7 minutes). Using hot rinse water (85 ° C), this drying time can be significantly reduced by 4.5 minutes while still providing very neutral added particles.
本發明至少部分基於一種實用的、技術的解決方案,其用於解决以下問題:添加顆粒會作為處理方法自濕式處理(例如,沖洗)過渡至乾燥處理之方式的後果。一種習知之處理(例如)可涉及一種配方,其中晶圓經沖洗,然後淨化通入處理腔室之沖洗管線,且然後乾燥晶圓。雖然不期望受理論所限,但我們相信此無防護、無遮蔽的淨化係添加顆粒的顯著原因。我們已觀察到當淨化通入處理腔室之液體管線時會產生液體薄霧或懸浮微粒。除了可能超過一相對狹小的溫度範圍外,此薄霧或懸浮微粒可沉落為乾燥晶圓表面上的細小液滴。此等液滴然後會被偵測為光點缺陷,及因此為添加顆粒。添加顆粒之數目相關於較小之顆粒(例如,尺寸小於約90 nm之顆粒)而傾向於最大。簡而言之,根據習知方法之無防護、無遮蔽之液體淨化咸信為添加顆粒之來源,其中添加顆粒之數目可為經淨化之液體溫度的一有力函數。在實踐模式中,本發明較佳經由抽吸將反吸機能倂入為波導管之至少一部分,藉由該波導管可將處理液體(尤其為沖洗液體)分配於一處理腔室中。此允許在使液體停止初級流入或噴灑入腔室中之後可經由反吸而非單獨經由通入腔室之淨化來移除對應的供應管線中之剩餘液體之至少一部分。藉由反吸剩餘沖洗液體之至少一部分,將產生較少量的能影響晶圓表面之懸浮微粒或薄霧。The present invention is based, at least in part, on a practical, technical solution for solving the problem that the addition of particles can be a consequence of the manner in which the treatment process transitions from a wet process (e.g., rinse) to a dry process. One conventional process, for example, may involve a formulation in which the wafer is rinsed, then the rinse line that passes into the processing chamber is purged, and then the wafer is dried. While not wishing to be bound by theory, we believe that this unprotected, unshielded purification is a significant cause of the addition of particles. We have observed that liquid mist or aerosols are produced when purifying the liquid line into the processing chamber. In addition to possibly exceeding a relatively narrow temperature range, the mist or aerosol can sink into fine droplets on the surface of the dried wafer. These droplets are then detected as spot defects and are therefore added particles. The number of added particles is related to smaller particles (e.g., particles having a size less than about 90 nm) and tends to be the largest. Briefly, unprotected, unshielded liquid purification according to conventional methods is a source of added particles, wherein the number of added particles can be a powerful function of the temperature of the purified liquid. In a practical mode, the present invention preferably injects a defensive function into at least a portion of the waveguide via suction, by which the treatment liquid, particularly the rinsing liquid, can be dispensed into a processing chamber. This allows at least a portion of the remaining liquid in the corresponding supply line to be removed via backwashing rather than separate purification through the inlet chamber after the liquid is stopped from flowing into the chamber or sprayed into the chamber. By sucking back at least a portion of the remaining rinse liquid, a smaller amount of aerosol or mist that can affect the surface of the wafer will be produced.
同樣,雖然不期望受理論所限,但我們相信當晶圓表面開始乾燥時,該等表面便變得易受污染。另外,較快之乾燥傾向於增加此弱點。因而,當淨化發生時,當晶圓表面為乾燥或部分乾燥時,淨化在添加顆粒方面傾向於更成問題。當(例如)在淨化期間在一處理腔室中旋轉晶圓時尤其會出現此問題。旋轉之晶圓傾向於在比完成淨化之時間週期短的時間週期中乾燥或開始乾燥。換言之,淨化比乾燥花費更多時間。當淨化繼續時,會出現與淨化相關聯之薄霧/懸浮微粒因此與相對乾燥之晶圓表面接觸的時期。結果,更長的淨化循環使旋轉的晶圓表面更易受污染。Again, while not wishing to be bound by theory, it is believed that when the surface of the wafer begins to dry, the surfaces become susceptible to contamination. In addition, faster drying tends to increase this weakness. Thus, when purification occurs, when the surface of the wafer is dry or partially dried, purification tends to be more problematic in terms of adding particles. This problem typically occurs when, for example, a wafer is rotated in a processing chamber during cleaning. The rotating wafer tends to dry or begin to dry in a time period that is shorter than the time period in which the purification is completed. In other words, purification takes more time than drying. As the purification continues, there will be a period of time when the mist/suspension particles associated with the purification are in contact with the relatively dry wafer surface. As a result, a longer purge cycle makes the surface of the rotating wafer more susceptible to contamination.
本發明亦包括多個實施例,其中淨化通入處理腔室之一或多個液體供應管線,同時一或多個其它供應管線用於弄濕晶圓表面。在淨化前面的管線後,可停止流過後面的管線,其後可經由反吸剩餘的液體而清空該等後面的管線。本發明之顯著之處在於其允許(若需要)發生通入處理腔室之至少某些淨化,同時晶圓表面仍為濕的並防止晶圓表面不受傾向於隨著淨化而出現之懸浮微粒或薄霧的污染。The invention also includes embodiments in which the purge passes into one or more of the liquid supply lines of the processing chamber while one or more other supply lines are used to wet the wafer surface. After purging the preceding lines, the flow through the subsequent lines can be stopped, after which the subsequent lines can be emptied by sucking back the remaining liquid. The invention is significant in that it allows, if desired, at least some of the cleaning into the processing chamber while the wafer surface is still wet and prevents the wafer surface from being exposed to aerosols that tend to appear with purification. Or misty pollution.
或者,若藉由供應管線將反吸功能用於移除所有的剩餘液體,則在自濕式處理過渡至乾燥處理的過程中可完全避免通入腔室之淨化。Alternatively, if the back suction function is used to remove all of the remaining liquid by the supply line, the purge of the inlet chamber can be completely avoided during the transition from the wet process to the dry process.
因而,以上論述之實施例涵蓋:至少在沖洗處理結束時,不直接淨化通入處理腔室之液體供應管線中的剩餘液體之至少一部分,而是經由不同的路徑將其自設備移除。反吸正是供應移除能量的一種方式,藉由該移除能量而收回此剩餘液體。使用適當之閥門組、附加之波導管等之其它移除策略可涉及使用壓力將剩餘液體自管線吹至一目的地(如一汲極或再循環),而非直接進入處理腔室中。Thus, the embodiments discussed above encompass that at least a portion of the remaining liquid in the liquid supply line to the processing chamber is not directly purged at the end of the rinsing process, but is removed from the device via a different path. Back sucking is a way of supplying energy to remove this remaining liquid by removing energy. Other removal strategies using a suitable valve block, additional waveguides, etc. may involve the use of pressure to blow the remaining liquid from the line to a destination (such as a drain or recirculation) rather than directly into the processing chamber.
因此,應瞭解,現在或以後已知的淨化通入一處理腔室之剩餘液體(尤其為沖洗液體)之任何習知系統皆能自使用根據本發明之反吸功能而獲益。Accordingly, it should be understood that any conventional system known to purify the remaining liquid (especially flushing liquid) that is passed into a processing chamber, now or later, can benefit from the use of the suckback function in accordance with the present invention.
在另一實踐模式中,本發明提供一種處理配方,其中不淨化通入處理腔室的殘留之處理液體(尤其為沖洗液體)之至少一部分。作為替代,處理液體之殘留部分僅停留在對應的供應管線中直至自處理腔室移除一或多個晶圓之後。在自處理腔室移除晶圓之後,可反吸殘留之處理液體或安全地淨化通入處理腔室的殘留之處理液體。In another mode of practice, the present invention provides a treatment formulation in which at least a portion of the residual treatment liquid (especially a rinse liquid) that is passed into the processing chamber is not purged. Alternatively, the residual portion of the treatment liquid only stays in the corresponding supply line until after the one or more wafers are removed from the processing chamber. After the wafer is removed from the processing chamber, the residual processing liquid can be backed up or the residual processing liquid that is passed into the processing chamber can be safely purged.
本發明亦包括多個實施例,其中淨化通入處理腔室之一或多個液體供應管線,同時一或多個其它供應管線用於弄濕晶圓表面。在淨化前面的管線之後,可停止流過後面的管線,其後,移除晶圓,隨後淨化或反吸此等後面的管線。本發明之此態樣之顯著之處在於其允許(若需要)發生通入處理腔室之至少某些淨化,同時晶圓表面仍為濕的並防止晶圓表面不受傾向於隨著淨化而出現之懸浮微粒或薄霧的污染。The invention also includes embodiments in which the purge passes into one or more of the liquid supply lines of the processing chamber while one or more other supply lines are used to wet the wafer surface. After purging the front line, the flow through the back line can be stopped, after which the wafer is removed and the subsequent lines are subsequently purged or desorbed. This aspect of the invention is significant in that it allows, if desired, at least some of the cleaning into the processing chamber while the wafer surface is still wet and prevents the wafer surface from being inclined toward purification. The presence of aerosols or mist contamination.
或者,若供應管線中之所有剩餘液體僅保持停留,則在自濕式處理過渡至乾燥處理的過程中可完全避免通入腔室之淨化。Alternatively, if all of the remaining liquid in the supply line remains only in residence, the purge of the inlet chamber can be completely avoided during the transition from the wet process to the dry process.
在一態樣中,根據本發明而用於處理微電子基板之一種系統包括:一處理腔室,其中在處理期間可定位一或多個微電子基板;一流體傳遞路徑,藉由該流體傳遞路徑可將流體分配在定位於處理腔室中之基板上;及一流體移除路徑,其以一方式以流體耦合至該流體傳遞路徑,使得可自流體傳遞路徑收回該流體傳遞路徑中之剩餘液體之至少一部分而不於一或多個基板上直接淨化至少剩餘液體部分。In one aspect, a system for processing a microelectronic substrate in accordance with the present invention includes: a processing chamber in which one or more microelectronic substrates can be positioned during processing; a fluid transfer path by which the fluid is delivered The path can distribute the fluid on the substrate positioned in the processing chamber; and a fluid removal path fluidly coupled to the fluid transfer path in a manner such that the remainder of the fluid transfer path can be withdrawn from the fluid transfer path At least a portion of the liquid does not directly purify at least the remaining liquid portion on one or more substrates.
在另一態樣中,一種根據本發明之噴灑處理器系統包括:一處理腔室,其中在處理期間可定位一或多個微電子基板;及一流體傳遞系統,其與該處理腔室流動相連。該流體傳遞系統包括:一流體傳遞路徑,可藉由該流體傳遞路徑將流體分配在定位於處理腔室中之基板上;一流體移除路徑,其以一方式以流體耦合至流體傳遞路徑,使得可自流體傳遞路徑之至少一部分收回流體傳遞路徑中之剩餘液體之至少一部分而不於一或多個基板上直接淨化至少剩餘液體之該部分;及一流體旁路路徑,其以一方式以流體耦合至流體傳遞路徑及流體移除路徑,使得當氣體流過流體旁路路徑時,將真空施加至流體傳遞路徑之至少一部分及流體移除路徑。In another aspect, a spray processor system in accordance with the present invention includes: a processing chamber in which one or more microelectronic substrates can be positioned during processing; and a fluid transfer system that flows with the processing chamber Connected. The fluid transfer system includes a fluid transfer path through which fluid can be dispensed onto a substrate positioned in the processing chamber, and a fluid removal path fluidly coupled to the fluid transfer path in a manner Educating at least a portion of the remaining fluid in the fluid transfer path from at least a portion of the fluid transfer path without directly purifying the portion of the remaining liquid on the one or more substrates; and a fluid bypass path in a manner The fluid is coupled to the fluid transfer path and the fluid removal path such that when the gas flows through the fluid bypass path, a vacuum is applied to at least a portion of the fluid transfer path and the fluid removal path.
在另一態樣中,根據本發明而處理一或多個微電子基板的方法包括以下步驟:將一或多個微電子基板定位於處理腔室中,藉由流體傳遞路徑將液體分配於處理腔室中及一或多個基板上,停止分配液體,其中一定量之剩餘液體殘留於流體傳遞路徑中,促使自流體路徑藉由流體移除路徑而移除剩餘液體之至少一部分,使得不在基板上直接淨化剩餘液體之該部分,並乾燥該等基板。In another aspect, a method of processing one or more microelectronic substrates in accordance with the present invention includes the steps of positioning one or more microelectronic substrates in a processing chamber, and distributing the liquid to the processing by a fluid transfer path Discharging the liquid in the chamber and on the one or more substrates, wherein a certain amount of remaining liquid remains in the fluid transfer path, causing at least a portion of the remaining liquid to be removed from the fluid path by the fluid removal path such that the substrate is not present The portion of the remaining liquid is directly purified and the substrates are dried.
在另一態樣中,根據本發明而處理一或多個微電子基板的方法包括以下步驟:將一或多個微電子基板定位於處理腔室中,經由一第一流體傳遞路徑而將第一液體流分配於處理腔室中及一或多個基板上,經由一第二流體傳遞路徑而將第二液體流分配於處理腔室中及一或多個基板之上,停止第一液體流之分配,使得一定量的剩餘液體殘留於該第一流體傳遞路徑中,淨化通入處理腔室之該第一流體傳遞路徑,同時發生第二液體流之分配,在停止淨化第一流體傳遞路徑後,停止第二液體流之分配,使得剩餘量之液體殘留於第二流體傳遞路徑之中,並藉由一流體移除路徑移除第二流體傳遞路徑中的剩餘量之液體之至少一部分,使得不於基板上淨化該第二流體傳遞路徑中的剩餘量之液體之該部分。In another aspect, a method of processing one or more microelectronic substrates in accordance with the present invention includes the steps of positioning one or more microelectronic substrates in a processing chamber, via a first fluid transfer path Disposing a liquid stream in the processing chamber and on the one or more substrates, distributing the second liquid stream in the processing chamber and the one or more substrates via a second fluid transfer path, stopping the first liquid flow Distributing such that a certain amount of remaining liquid remains in the first fluid transfer path, purifying the first fluid transfer path into the processing chamber, and simultaneously distributing the second liquid flow, stopping purging the first fluid transfer path Thereafter, the dispensing of the second liquid stream is stopped such that the remaining amount of liquid remains in the second fluid transfer path, and at least a portion of the remaining amount of liquid in the second fluid transfer path is removed by a fluid removal path, The portion of the liquid remaining in the second fluid transfer path is not purified on the substrate.
在另一態樣中,一種根據本發明之噴灑處理器系統包括:一處理腔室,其中在處理期間可定位一或多個微電子基板;一流體傳遞路徑,可藉由該流體傳遞路徑將流體分配在定位於該處理腔室中之基板上;一流體旁路,可藉由該流體旁路使流體偏離流體傳遞路徑;一第一閥門,其耦合流體傳遞路徑及流體旁路;一流體移除路徑,當第一閥門處於正常狀態時,該流體移除路徑相對於流體旁路位於下游;及一第二閥門,其將流體移除路徑耦合至流體傳遞路徑。處於正常狀態之第一閥門徑打開以允許流體繼續流過流體傳遞路徑且處於正常狀態之第一閥門經關閉以流體自流體傳遞路徑流入流體旁路中,且其中處於致動狀態之第一閥門經關閉以阻礙流體向下流過流體傳遞路徑且處於致動狀態之第一閥門經打開以允許流體自流體傳遞路徑流至流體旁路。處於正常狀態之第二閥門經打開以允許流體繼續流過流體傳遞路徑且處於正常狀態之第二閥門經關閉以阻礙流體自流體傳遞路徑流入流體移除路徑中,且其中處於致動狀態之第二閥門經打開以允許流體移除路徑與流體傳遞路徑之至少一部分之間流體連通,其中該流體傳遞路徑在第二閥門及處理腔室之間。In another aspect, a spray processor system in accordance with the present invention includes: a processing chamber in which one or more microelectronic substrates can be positioned during processing; a fluid transfer path by which the fluid transfer path will Dispensing fluid on a substrate positioned in the processing chamber; a fluid bypass through which the fluid is deflected away from the fluid transfer path; a first valve coupled to the fluid transfer path and fluid bypass; a fluid The path is removed, the fluid removal path is downstream relative to the fluid bypass when the first valve is in a normal state; and a second valve coupling the fluid removal path to the fluid transfer path. The first valve in a normal state opens to allow fluid to continue to flow through the fluid transfer path and the first valve in a normal state is closed to flow fluid from the fluid transfer path into the fluid bypass, and wherein the first valve is in an actuated state A first valve that is closed to block fluid flow down the fluid transfer path and is in an actuated state is opened to allow fluid to flow from the fluid transfer path to the fluid bypass. The second valve in a normal state is opened to allow fluid to continue to flow through the fluid transfer path and the second valve in a normal state is closed to impede fluid flow from the fluid transfer path into the fluid removal path, and wherein the actuation state is The second valve is opened to allow fluid communication between the fluid removal path and at least a portion of the fluid transfer path, wherein the fluid transfer path is between the second valve and the processing chamber.
下文所述之本發明之實施例非意欲為詳盡的或將本發明限制於以下詳細描述中所揭示之精確形式。相反,選擇並描述實施例使得其它熟習此項技術者可瞭解並理解本發明之原理及實踐。The embodiments of the invention described below are not intended to be exhaustive or to limit the invention. Rather, the embodiments of the invention may be understood and understood by those skilled in the art.
圖1展示一種代表性之方式,本發明之原理藉由該方式可倂入晶圓處理系統10(諸如自FSI International,Inc.,Chaska,MN購得的MERCURY或ZETA噴灑處理器系統)之沖洗及乾燥組件部分。此等系統有利地可用於處理200毫米及300毫米兩種晶圓。具體言之,沖洗及乾燥之組件部分可經修改以倂入抽吸機能而允許(較佳在如以下所述之自沖洗處理過渡至乾燥處理的過程期間)反吸液體。除了如本文所述對沖洗及乾燥組件部分作此修改之外,此說明性實踐模式中之系統10另外可等同於市售之MERCURY或ZETA噴灑處理器系統,且出於清晰之目的,未展示此等系統之其它習知之組件部分。Figure 1 shows a representative manner by which the principles of the present invention can be incorporated into a wafer processing system 10 (such as MERCURY available from FSI International, Inc., Chaska, MN). Or ZETA Spray the processor system) to rinse and dry the component parts. These systems are advantageously used to process both 200 mm and 300 mm wafers. In particular, the rinsed and dried component portion can be modified to incorporate a suction function to allow for back-feeding of the liquid (preferably during the transition from the rinse process to the dry process as described below). In addition to this modification of the rinsing and drying component portions as described herein, the system 10 in this illustrative mode of practice may additionally be equated with a commercially available MERCURY. Or ZETA The processor system is sprayed and other well-known component parts of such systems are not shown for clarity.
系統10包括噴灑處理器工具12,噴灑處理器工具12通常包括外殼14及封閉腔室18之頂蓋16。可藉由自頂蓋16下降之中心噴灑柱20將液體及/或氣體引入腔室18中。由遠離中心噴灑柱20及進入腔室18而定向之箭頭示意性指示藉由中心噴灑柱20而引入材料。可藉由轉軸32將可旋轉之轉盤24耦合至馬達34,使得可旋轉之轉盤24可圍繞如環繞轉軸32之箭頭所指示之轉軸32的軸旋轉。柱26自轉盤24延伸以支撐一或多個載體28,在處理過程期間會在該等載體中固持一或多個晶圓(未圖示)。可旋轉之轉盤24及一或多個柱26可提供另一路徑,可如遠離轉盤24並遠離支撐柱26之頂部並進入腔室18而定向之箭頭所指示而藉由該路徑將液體及/或氣體引入腔室18中。可藉由聯軸器38將旋轉單元36以流體耦合至馬達34且其有助於傳遞將液體及/或氣體自一供應源傳遞至腔室18內之旋轉環境。在受讓人共同待決之以Benson等人之名所作之題為"Rotary Unions,Fluid Delivery Systems,and Related Methods"的申請案中描述旋轉單元36之一特佳實施例。一或多個側槽噴灑柱22定位於腔室18中並提供另一路徑,藉由此路徑可如遠離側槽噴灑柱並進入腔室18而定向之箭頭所指示而將液體及/或氣體引入腔室18中。System 10 includes a spray processor tool 12 that typically includes a housing 14 and a top cover 16 that encloses the chamber 18. Liquid and/or gas may be introduced into the chamber 18 by a spray column 20 that is lowered from the top cover 16. The arrows oriented away from the central spray column 20 and into the chamber 18 schematically indicate the introduction of material by the central spray column 20. The rotatable turntable 24 can be coupled to the motor 34 by a shaft 32 such that the rotatable turntable 24 is rotatable about an axis such as the axis of rotation 32 as indicated by the arrow about the axis of rotation 32. The post 26 extends from the turntable 24 to support one or more carriers 28 that hold one or more wafers (not shown) in the carriers during processing. The rotatable turntable 24 and the one or more posts 26 can provide another path through which liquid and/or liquid can be directed as indicated by the arrow pointing away from the turntable 24 and away from the top of the support post 26 and into the chamber 18. Or a gas is introduced into the chamber 18. The rotating unit 36 can be fluidly coupled to the motor 34 by a coupling 38 and it facilitates the transfer of a rotating environment in which liquid and/or gas is transferred from a supply to the chamber 18. A particularly preferred embodiment of the rotating unit 36 is described in the application entitled "Rotary Unions, Fluid Delivery Systems, and Related Methods" by the assignee in the name of Benson et al. One or more side channel spray posts 22 are positioned in the chamber 18 and provide another path by which the liquid and/or gas can be directed as indicated by the arrow directed away from the side channel spray column and into the chamber 18. Introduced into the chamber 18.
在所展示之特定實施例中,可藉由中心噴灑柱20、轉盤24/支撐物26,及/或側槽噴灑柱22中之任何一者將沖洗液體及乾燥氣體引入腔室18。可經由一或多個示意性地描繪為其它化學管線39之管線藉由中心噴灑柱20將其它種類之處理液體或氣態處理化學藥品便利地引入腔室18。In the particular embodiment shown, the flushing liquid and drying gas can be introduced into the chamber 18 by any of the center spray column 20, the turntable 24/support 26, and/or the side tank spray column 22. Other types of treatment liquids or gaseous treatment chemicals can be conveniently introduced into the chamber 18 via the central spray column 20 via one or more lines that are schematically depicted as other chemical lines 39.
現在將更詳細地描述一倂入抽吸機能之沖洗及乾燥組件部分的較佳實施例。自一或多個水源(未圖示)經由供應管線40而將諸如去離子水之沖洗液體供應至系統10。較佳根據微電子產業中良好之實踐而過濾並淨化該水。過濾及淨化之組件部分(未圖示)可併入系統10及/或其可位於系統10之外部。A preferred embodiment of the flushing and drying assembly portion of the suction function will now be described in more detail. Flushing liquid, such as deionized water, is supplied to system 10 via one or more water sources (not shown) via supply line 40. The water is preferably filtered and purified according to good practices in the microelectronics industry. The filtered and purified component portion (not shown) can be incorporated into system 10 and/or it can be external to system 10.
可經由管線41a、41b及41c將沖洗液體自供應管線40輸送至中心噴灑柱20。可經由管線42a及42b且然後經由管線41b及41c而將一或多種氣體(諸如氮)自一供應源(未圖示)供應至中性噴灑柱20。可藉由閥門44、46、及48控制液體及氣體通過管線41a、41b、41c、42a及42b至中心噴灑柱20的流動。所展示之閥門44相關於氣體流通常為關閉的且可經致動以允許氣體自管線42a流至42b。閥門46通常為打開的以允許氣體自管線42b流至41b,但其相關於自管線41a至41b之液體流通常為關閉的。當閥門46經致動時,液體可流過閥門,同時阻礙氣體流動。閥門48可控制液體或氣體經由管線41c自管線41b至中心噴灑柱20的流動,或者另外其可使液體及氣體之流動(視情况而定)經由管線53偏離至汲極50。閥門48通常為打開的以允許流體自管線41b流至41c。當致動時,閥門48經由管線53使流過止回閥門51的流體發生偏離。止回閥門51可連接至一或多個設計為接收此等流體的其它組件。如圖所示,止回閥門51連接至汲極50,並防止液體(或氣體)之流動自汲極50流回並流入閥門48中。The rinsing liquid can be delivered from the supply line 40 to the center spray column 20 via lines 41a, 41b, and 41c. One or more gases, such as nitrogen, may be supplied to the neutral spray column 20 from a supply source (not shown) via lines 42a and 42b and then via lines 41b and 41c. The flow of liquid and gas through lines 41a, 41b, 41c, 42a and 42b to central spray column 20 can be controlled by valves 44, 46, and 48. The valve 44 shown is generally closed with respect to the gas flow and can be actuated to allow gas to flow from line 42a to 42b. Valve 46 is normally open to allow gas to flow from line 42b to 41b, but its associated liquid flow from lines 41a through 41b is normally closed. When the valve 46 is actuated, liquid can flow through the valve while obstructing gas flow. Valve 48 can control the flow of liquid or gas from line 41b to central spray column 20 via line 41c, or alternatively it can cause the flow of liquid and gas, as the case may be, to deviate to drain 50 via line 53. Valve 48 is normally open to allow fluid to flow from line 41b to 41c. When actuated, valve 48 deflects fluid flowing through check valve 51 via line 53. The check valve 51 can be coupled to one or more other components designed to receive such fluids. As shown, the check valve 51 is coupled to the drain 50 and prevents the flow of liquid (or gas) from flowing back from the drain 50 and into the valve 48.
可經由管線52a,52b,52c及52d將沖洗液體自供應管線40輸送至側槽噴灑柱22。可經由管線56a及56b且然後經由管線52b,52c及52d自一供應源(未圖示)將一或多種氣體(諸如氮)供應至側槽噴灑柱22。該氣體供應源可與將氣體供應至中心噴灑柱20之供應源相同或不同。通過管線52b、52c及52d之氣體及/或液體之流動可分別經由管線60或62偏離至抽吸器58。流體可自抽吸器58經由管線66流過止回閥門64。止回閥門64可連接至一或多個設計為接收此等流體之其它元件。如圖所示,止回閥門64連接至汲極67,且其可防止液體(或氣體)之流動自汲極67流回並流入抽吸器58中。汲極67可與汲極50相同或不同。The flushing liquid can be delivered from the supply line 40 to the side tank spray column 22 via lines 52a, 52b, 52c and 52d. One or more gases, such as nitrogen, may be supplied to the side tank spray column 22 from a supply source (not shown) via lines 56a and 56b and then via lines 52b, 52c and 52d. The gas supply may be the same or different than the supply source that supplies the gas to the central spray column 20. The flow of gas and/or liquid through lines 52b, 52c, and 52d can be offset to aspirator 58 via line 60 or 62, respectively. Fluid may flow from aspirator 58 through line 66 through check valve 64. The check valve 64 can be coupled to one or more other components designed to receive such fluids. As shown, the check valve 64 is coupled to the drain 67 and prevents flow of liquid (or gas) from flowing back from the drain 67 and into the aspirator 58. The drain 67 can be the same or different than the drain 50.
根據本發明之噴灑處理器系統相關於至少一流體供應管線有利地倂入處理液體移除機能,以能自流體供應移除處理液體之至少一部分而無需淨化通入噴灑處理器工具之處理腔室之所有液體。抽吸器58為使用伯努力原理以有助於提供此移除機能之普通類型的裝置。當流體(諸如系統10之情況中之氣體)被強制通過裝置中之一光滑限縮物時,流體速率增加。此將降低壓力。換言之,以適當設定閥門72及74而建立之真空可用於自側槽噴灑柱22抽取或反吸液體以用於傳輸至另一位置而(例如)用於通過汲極67進行處理。以下將進一步描述在沖洗及乾燥順序處理之情況下如此達成的代表性實踐模式。The spray processor system according to the present invention advantageously incorporates a process liquid removal function with respect to at least one fluid supply line to enable removal of at least a portion of the process liquid from the fluid supply without purging the process chamber into the spray processor tool All liquids. Aspirator 58 is a common type of device that uses the principle of the primary effort to help provide this removal function. When a fluid, such as a gas in the case of system 10, is forced through one of the smoothing constrictions in the device, the fluid velocity increases. This will reduce the pressure. In other words, the vacuum established by properly setting valves 72 and 74 can be used to extract or suck back liquid from side slot spray column 22 for transmission to another location, for example, for processing by drain 67. A representative mode of practice thus achieved in the context of sequential processing of rinsing and drying will be further described below.
抽吸器之許多適當實施例可自衆多商業來源以商業方式購得。所發現之適用於本發明之實踐中之一抽吸器之說明性實施例可以商業方式購自Entegris,Inc.,Chaska,MN之商標為GALTEK的抽吸器。Many suitable embodiments of aspirator are commercially available from a variety of commercial sources. An illustrative embodiment of an aspirator found to be suitable for use in the practice of the present invention is commercially available from Entegris, Inc., Chaska, MN under the trademark GALTEK Aspirator.
可藉由閥門68、70、72及74控制流體至側槽柱22的流動。所展示之閥門68相關於氣體流動通常為關閉的,且經致動以允許氣體經由管線56b自管線56a流至閥門70。閥門70通常為打開的以允許氣體自管線56b流至管線52b,但其相關於自管線52a流至52b之液體通常為關閉的。當閥門70經致動時,液體可流過閥門70,同時阻礙氣體之流動。閥門72可用於將流體、氣體及/或液體經由管線60自管線52b偏離至抽吸器58。在其正常狀態中,閥門72經設定使得流體自管線52b流至52c。當閥門72經致動時,流體可自管線52b偏離至管線60。閥門72包括一緩衝器76,該緩衝器76足以延遲閥門72返回至其正常條件,使得管線56b及/或52b中所存在之任何過度的氣體壓力可經由抽吸器58及管線60及66釋放至汲極67而不釋放至腔室18中(將在下文論述)。視閥門74如何設定而定,閥門74可用於經由管線62使流體自管線52c及52d偏離/牽引至抽吸器58。在其正常狀態中,閥門74經設定使得流體經由管線52d自管線52c流至側槽柱22中。當致動時,管線52c及52d及側槽噴灑柱22與管線62及抽吸器58流體連通。因而,例如,當如由虛線86所示意性描繪的那樣而同時一起致動閥門68、72及74時,經由閥門72通過管線56a、56b、52b及60流至抽吸器58的氣體可在管線52c、52d及62中及在側槽噴灑柱22中產生一真空或吸氣作用。結果,在此真空作用之存在下,將藉由抽吸器58反吸管線52c、52d及62中及側槽噴灑柱22中之液體。在反吸管線52c、52d及62中及側槽噴灑柱22中之液體後,閥門68、72及74可同時返回至其正常狀態(如由虛線86所示意性描繪的那樣),經受由緩衝器76所提供之延遲。閥門72上之緩衝器76可經設定以提供一足以延遲閥門72返回至其正常狀態之時間延遲,使得管線56b及/或52b中所存在之任何過度的氣體壓力可經由抽吸器58及管線60及66而釋放至汲極67並不經由管線52c及52d及側槽噴灑柱22而釋放至腔室18中。當閥門72及74返回至其正常狀態時,若藉由管線52c及52d及側槽噴灑柱22而引導管線56b及/或52b中之任何過度分氣體壓力,將導致管線52c及/或52d及/或側槽噴灑柱22中所存在之剩餘液體由於過度壓力而形成薄霧/懸浮微粒之短暫爆發並可將剩餘液體排入腔室18中。此非吾人所需,因為此薄霧/懸浮微粒會與腔室18中之乾燥晶圓接觸並會將顆粒添加至晶圓,尤其因為較乾燥之晶圓對薄霧/懸浮微粒更為敏感。虛線86示意性描繪閥門68、72及74一起被致動,當閥門68、72及74返回至其正常狀態時,其經受緩衝器76延遲閥門72之返回的影響。The flow of fluid to the side channel column 22 can be controlled by valves 68, 70, 72 and 74. The valve 68 shown is generally closed with respect to gas flow and is actuated to allow gas to flow from line 56a to valve 70 via line 56b. Valve 70 is normally open to allow gas to flow from line 56b to line 52b, but the liquid associated with flow from line 52a to 52b is normally closed. When the valve 70 is actuated, liquid can flow through the valve 70 while obstructing the flow of gas. Valve 72 can be used to deflect fluid, gas, and/or liquid from line 52b to aspirator 58 via line 60. In its normal state, valve 72 is set such that fluid flows from line 52b to 52c. When valve 72 is actuated, fluid can deviate from line 52b to line 60. Valve 72 includes a damper 76 sufficient to delay return of valve 72 to its normal condition such that any excess gas pressure present in line 56b and/or 52b can be released via aspirator 58 and lines 60 and 66. To the drain 67 is not released into the chamber 18 (discussed below). Depending on how the valve 74 is set, the valve 74 can be used to deflect/draw fluid from the lines 52c and 52d to the aspirator 58 via line 62. In its normal state, valve 74 is set such that fluid flows from line 52c to side channel column 22 via line 52d. When actuated, lines 52c and 52d and side channel spray columns 22 are in fluid communication with line 62 and aspirator 58. Thus, for example, when valves 68, 72, and 74 are actuated together at the same time as schematically depicted by dashed line 86, the gas flowing through a line 72 through lines 72a, 56b, 52b, and 60 to aspirator 58 may be A vacuum or aspiration is created in the lines 52c, 52d and 62 and in the side channel spray column 22. As a result, in the presence of this vacuum action, the liquid in the column 22 and the side tank spray column 22 will be sucked back by the aspirator 58. After the back suction lines 52c, 52d and 62 and the liquid in the side tank spray column 22, the valves 68, 72 and 74 can simultaneously return to their normal state (as depicted by the dashed line 86), subject to buffering. The delay provided by the device 76. The buffer 76 on valve 72 can be set to provide a time delay sufficient to delay return of valve 72 to its normal state such that any excess gas pressure present in line 56b and/or 52b can be via aspirator 58 and line Releases 60 and 66 to the drain 67 are not released into the chamber 18 via lines 52c and 52d and side channel spray posts 22. When valves 72 and 74 return to their normal state, any excessive gas separation pressure in lines 56b and/or 52b via lines 52c and 52d and side channel spray columns 22 will result in lines 52c and/or 52d and The remaining liquid present in the side tank spray column 22 forms a brief burst of mist/suspension particles due to excessive pressure and can drain the remaining liquid into the chamber 18. This is not required because the mist/suspension will contact the dry wafer in chamber 18 and will add particles to the wafer, especially since the drier wafer is more sensitive to mist/suspension particles. The dashed line 86 schematically depicts the valves 68, 72, and 74 being actuated together, and when the valves 68, 72, and 74 return to their normal state, they are subjected to the effect of the buffer 76 delaying the return of the valve 72.
如所提及的,可旋轉之轉盤24及一或多個柱26可提供另一路徑,藉由該路徑可將液體及/或氣體引入腔室18之中。舉例而言,如圖所示,經由管線78a及78b將沖洗液體自供應管線40輸送至轉盤24及支撐柱26,且經由管線80a及80b並然後經由管線78b將一或多種氣體(諸如氮)自供應源(未圖示)供應至轉盤24及支撐柱26。該氣體供應源可與將氣體供應至中心噴灑柱20及/或側槽噴灑柱22之供應源相同或不同。可藉由閥門82及84控制液體及氣體通過管線78a、78b、80a及80b至轉盤24及支撐柱26的流動。如圖所示之閥門82相關於氣體流動通常為關閉的且可經致動以允許氣體自管線80a流至80b。閥門84通常為打開的以允許氣體自管線80b流至管線78b,但其相關於自管線78a至78b之液體的流動通常為關閉的。當閥門84經致動時,液體可流過閥門84,同時阻礙氣體之流動。As mentioned, the rotatable turntable 24 and the one or more posts 26 can provide another path through which liquid and/or gas can be introduced into the chamber 18. For example, as shown, flushing liquid is delivered from supply line 40 to turntable 24 and support column 26 via lines 78a and 78b, and one or more gases (such as nitrogen) are via line 80a and 80b and then via line 78b. The supply source (not shown) is supplied to the turntable 24 and the support column 26. The gas supply may be the same or different than the supply of gas to the central spray column 20 and/or the side tank spray column 22. The flow of liquids and gases through lines 78a, 78b, 80a, and 80b to the turntable 24 and support column 26 can be controlled by valves 82 and 84. Valve 82 as shown is generally closed with respect to gas flow and can be actuated to allow gas to flow from line 80a to 80b. Valve 84 is normally open to allow gas to flow from line 80b to line 78b, but its flow associated with liquid from lines 78a through 78b is typically closed. When valve 84 is actuated, liquid can flow through valve 84 while obstructing the flow of gas.
閥門44、46、48、68、70、72、74、82及84可為任何類型之閥門或可為諸如氣動式、電子式等之任何類型閥門的組合。氣動控制之實施例為較佳,因為當其用於含有化學藥品、化學烟霧及頻繁徹底沖洗之苛刻環境中時,其本質上更可靠。此等氣動閥門可自諸如Entegris、Inc.,Chaska、MN及Saint Gobain,San Jose,CA之廣泛商業來源購得。Valves 44, 46, 48, 68, 70, 72, 74, 82, and 84 can be any type of valve or can be a combination of any type of valve such as pneumatic, electronic, and the like. Embodiments of pneumatic control are preferred because they are inherently more reliable when used in harsh environments containing chemicals, chemical fumes, and frequent thorough rinsing. Such pneumatic valves are commercially available from a wide variety of commercial sources such as Entegris, Inc., Chaska, MN and Saint Gobain, San Jose, CA.
可如適當需要(諸如根據習知之實踐,或如本文所述,及/或如以上所參考之申請者共同待決之申請案中所述)以任何適合的供應速率及溫度而將沖洗液體供應至中心噴灑柱20、側槽噴灑柱22或轉盤24/支撐柱26中之任何一或多者。流動速率及溫度視各種因素而定,該等因素包括所實行之方法的性質、所處理之晶圓的性質、所使用之設備的類型等。在自FSI International,Inc可商業購得之MERCURY或ZETA噴灑處理器系統的情形下,沖洗液體之一般流動速率較佳為在任何所需溫度下(在該溫度下一般可避免沖洗液體發生凍結或沸騰)在2公升/分鐘至12公升/分鐘的範圍中。若加熱及/或冷凍液體,則用於加熱或冷凍液體之適合的設備(未圖示)可併入系統10中及/或位於系統10之外部。The rinsing liquid may be supplied at any suitable supply rate and temperature, as appropriate, such as in accordance with conventional practices, or as described herein, and/or as described in the co-pending application of the applicants incorporated herein by reference. Any one or more of the center spray column 20, the side groove spray column 22, or the turntable 24/support column 26. The flow rate and temperature are dependent on various factors including the nature of the method being implemented, the nature of the wafer being processed, the type of equipment used, and the like. In the case of a commercially available MERCURY or ZETA spray processor system from FSI International, Inc., the general flow rate of the rinse liquid is preferably at any desired temperature (at which temperature the rinse liquid is generally prevented from freezing or Boiling) in the range of 2 liters/minute to 12 liters/minute. Suitable equipment (not shown) for heating or freezing the liquid may be incorporated into system 10 and/or external to system 10 if the liquid is heated and/or frozen.
系統10允許在一或多個處理過程期間將反吸機能應用於側槽噴灑柱22。至少在一部分沖洗處理期間,尤其在當自沖洗過渡至乾燥時沖洗處理之末期部分期間,應用此功能係有利的及較佳的。已發現至少在一部分此過渡期間應用反吸機能可有利地提供非常一致及非常中性之添加顆粒的結果。System 10 allows a defensive function to be applied to side tank spray columns 22 during one or more processing steps. This function is advantageous and preferred during at least a portion of the rinsing process, particularly during the final portion of the rinsing process from the transition from flushing to drying. It has been found that the application of a phlegm function during at least a portion of this transition can advantageously provide very consistent and very neutral results of the addition of particles.
在處理後將顆粒添加至晶圓的程度為一種方式,在該方式中可評估一特定處理方法之有效性。The extent to which particles are added to the wafer after processing is a way in which the effectiveness of a particular processing method can be evaluated.
通常需要添加顆粒的數目為始終盡可能低的。使用習知之方法論,除了在相對狹小之範圍中的溫度下使用沖洗液體之外,否則難以達成此等結果。相關於非常小之添加顆粒(例如,尺寸約為90 nm或更小之顆粒)尤其如此。本發明之實踐極大地改良與添加顆粒相關的效能。此將在以下實例中進一步闡釋並在下文論述之圖2a、2b、3a及3b中以圖形方式加以描繪。It is usually necessary to add the number of particles as always as low as possible. Using conventional methodologies, it is difficult to achieve such results except for the use of rinsing liquids at temperatures in relatively narrow ranges. This is especially true with respect to very small added particles (for example, particles having a size of about 90 nm or less). The practice of the present invention greatly improves the effectiveness associated with the addition of particles. This will be further illustrated in the following examples and graphically depicted in Figures 2a, 2b, 3a and 3b discussed below.
如關於系統10而在圖1中所說明的,一抽吸器裝置僅併入通向側槽噴灑柱22之波導管中以相關於側槽噴灑柱22而提供反吸能力。在替代實施例中,除了相關於側槽噴灑柱22而提供反吸能力之外或代替該能力,可相關於通向中心柱20及/或轉盤24/支撐柱26之波導管提供類似的反吸能力。As illustrated with respect to system 10 in FIG. 1, an aspirator device is only incorporated into the waveguide leading to side channel spray column 22 to provide a suckback capability associated with side channel spray column 22. In an alternate embodiment, in addition to or in lieu of providing the back suction capability associated with the side channel spray column 22, a similar inverse may be provided in relation to the waveguide leading to the center post 20 and/or the turntable 24/support column 26. Suction ability.
現在將描述使用圖1之系統10來實踐本發明之代表性模式,其中在自沖洗過渡至乾燥期間實踐此反吸功能。在第一階段,一典型的沖洗及乾燥順序將涉及設定閥門44、46、48、68、70、72、74、82及84以藉由中心柱20、側槽噴灑柱22並視情況藉由轉盤24/支撐物26來將沖洗液體分配於晶圓上。詳細言之,閥門46、70及84經致動,且其它閥門處於其正常狀態。含水之沖洗液體可處於0℃至約100℃之範圍中的溫度下。其它類型之沖洗液體一般可處於高於凝固點但低於沸點之溫度下。通過中心噴灑柱20之沖洗液體之典型的流動速率在每分鐘5至8公升(1pm)之範圍中。通過側槽噴灑柱22之沖洗液體之典型的流動速率在8至13 lpm之範圍中。通過轉盤24及支撑物26之沖洗液體之典型流率在8至13 lpm之範圍中(將沖洗液體,及其流動速率一起供應給轉盤24及支撑柱26)。轉盤24在此沖洗期間可以5 rpm至500 rpm之範圍中之一或多種速度進行旋轉。以此方式進行沖洗可繼續任意所需之時間間隔,諸如30秒至10分鐘。A representative mode of practicing the invention using the system 10 of Figure 1 will now be described in which this suckback function is practiced during the transition from self-flushing to drying. In the first stage, a typical flushing and drying sequence will involve setting valves 44, 46, 48, 68, 70, 72, 74, 82, and 84 to spray the column 22 by the center post 20, side slots, and as appropriate A turntable 24/support 26 is used to dispense the rinsing liquid onto the wafer. In particular, valves 46, 70 and 84 are actuated and the other valves are in their normal state. The aqueous rinse liquid can be at a temperature in the range of from 0 °C to about 100 °C. Other types of rinse liquids can generally be at temperatures above the freezing point but below the boiling point. The typical flow rate of the rinse liquid through the center spray column 20 is in the range of 5 to 8 liters per minute (1 pm). The typical flow rate of the rinse liquid through the side tank spray column 22 is in the range of 8 to 13 lpm. The typical flow rate of the rinsing liquid through the turntable 24 and the support 26 is in the range of 8 to 13 lpm (the rinsing liquid, and its flow rate are supplied together to the turntable 24 and the support column 26). The turntable 24 can be rotated during one or more of the range of 5 rpm to 500 rpm during this flush. Flushing in this manner can continue for any desired time interval, such as 30 seconds to 10 minutes.
在下一階段,淨化中心噴灑柱20、轉盤24及支撑物26,同時藉由側槽噴灑柱22繼續弄濕晶圓。閥門44經致動且閥門46及48處於其正常狀態,使得加壓之淨化氣體淨化自管線41b及41c及中心噴灑柱20通入處理腔室18之剩餘液體。閥門82經致動且閥門84處於其正常狀態,使得加壓之淨化氣體淨化自管線78b、轉盤24及支撑物26通入處理腔室18之剩餘液體。因為藉由流過側槽噴灑柱22之沖洗液體良好地弄濕晶圓,所以淨化導致在晶圓表面上產生不當之水污染的風險被極大最小化。In the next stage, the purification center sprays the column 20, the turntable 24, and the support 26 while continuing to wet the wafer by the side groove spray column 22. Valve 44 is actuated and valves 46 and 48 are in their normal state such that pressurized purge gas purges the remaining liquid from line 41b and 41c and central spray column 20 into processing chamber 18. Valve 82 is actuated and valve 84 is in its normal state such that pressurized purge gas purges the remaining liquid from line 78b, turntable 24 and support 26 into processing chamber 18. Because the rinsing liquid flowing through the side-slot spray column 22 wets the wafer well, the risk of cleaning causing undue water contamination on the wafer surface is greatly minimized.
可使用各種淨化氣體。代表性實例包括:氮氣、二氧化碳及其組合等。通常可以10至40 psi之壓力,在20至30℃之溫度下,以2至10 scfm之流動速率供應該淨化氣體。Various purification gases can be used. Representative examples include: nitrogen, carbon dioxide, combinations thereof, and the like. The purge gas can typically be supplied at a flow rate of 2 to 10 scfm at a temperature of 20 to 30 ° C at a pressure of 10 to 40 psi.
在下一階段中,停止淨化整個中心噴灑柱20、轉盤24及支撑物26,同時沖洗液體繼續流過側槽噴灑柱22。此可藉由促使閥門44、46及48處於其正常狀態使得無氣體或液體流至中心噴灑柱20並藉由促使閥門82及84處於其正常狀態使得無氣體或液體可流過轉盤24及支撐柱26來完成。此階段較佳繼續一短時間間隔,例如自1至20秒,使得此階段與下一階段之間有短暫的延遲。若需要(例如,若使用緩衝時間係用於完成其它處理任務),則可使用較長的時間間隔,但較長的延遲會不必要地延長循環時間。In the next stage, the purification of the entire center spray column 20, the turntable 24, and the support 26 is stopped while the rinsing liquid continues to flow through the side tank spray column 22. This can be achieved by causing valves 44, 46 and 48 to be in their normal state such that no gas or liquid flows to central spray column 20 and by causing valves 82 and 84 to be in their normal state, no gas or liquid can flow through turntable 24 and support Column 26 is completed. This phase preferably continues for a short time interval, for example from 1 to 20 seconds, such that there is a short delay between this phase and the next phase. Longer time intervals can be used if needed (eg, if buffer time is used to complete other processing tasks), but longer delays can unnecessarily lengthen the cycle time.
在下一階段中,使沖洗液體停止流過側槽噴灑柱22且發生抽吸以反吸並將剩餘之沖洗液體導向汲極67。為如此完成,閥門68、72及74經致動,同時閥門70處於其正常狀態。結果,使液體停止流過側槽噴灑柱22。較佳地,當出現水污點時實踐上盡可能快地停止此流動,且因此添加顆粒傾向於隨著停止時間之增加而增加。另外,淨化氣體流過管線56a、管線56b、管線52b、管線60、抽吸器58、管線66、止回閥門64並流入汲極67中。此在側槽噴灑柱22、管線52c、管線52d及管線62中產生一真空,具有助於將剩餘液體移除至汲極67。In the next stage, the flushing liquid is stopped flowing through the side tank spray column 22 and suction occurs to suck back and direct the remaining flushing liquid to the drain 67. To accomplish this, valves 68, 72, and 74 are actuated while valve 70 is in its normal state. As a result, the liquid is stopped from flowing through the side tank spray column 22. Preferably, this flow is practically stopped as quickly as possible when water stains occur, and thus the added particles tend to increase as the stop time increases. In addition, the purge gas flows through the line 56a, the line 56b, the line 52b, the line 60, the aspirator 58, the line 66, the check valve 64, and flows into the drain 67. This creates a vacuum in the side tank spray column 22, line 52c, line 52d, and line 62 that helps to remove residual liquid to the drain 67.
現在為乾燥階段。此時可使用乾燥噴灑處理器中之一或多個晶圓的任何適合之方法,諸如藉由(例如)旋轉乾燥腔室18中之晶圓並視情況同時將乾燥氣體排入腔室18中(例如,直接對晶圓之表面施加乾燥氣體)。舉例而言,乾燥階段可涉及設定閥門44、46、48、68、70、72、74、82及84以藉由中心柱20、側槽噴灑柱22及轉盤24/支撐物26中之一或多者來將乾燥氣體分配於晶圓上。詳細言之,閥門46、48、70、72、74及84處於其正常狀態(即,未經致動),且閥門44、68及82處於其正常狀態(注意:在此乾燥階段中,閥門72及74如在上述淨化階段中一樣,未與閥門68一起致動閥門72及74)。可使用各種乾燥氣體。代表性實例包括:空氣、氮氣、二氧化碳、氬氣、異丙醇,其組合等。可以10至40 psi之壓力,在20至30℃之溫度下,以2至10 scfm之流動速率供應該乾燥氣體。It is now in the dry phase. Any suitable method of drying one or more wafers in the processor may be used at this point, such as by, for example, rotating the wafer in the chamber 18 and, as appropriate, simultaneously discharging the drying gas into the chamber 18. (For example, applying a dry gas directly to the surface of the wafer). For example, the drying phase may involve setting valves 44, 46, 48, 68, 70, 72, 74, 82, and 84 to one of the center column 20, the side channel spray column 22, and the turntable 24/support 26 or Many are used to distribute dry gas on the wafer. In particular, valves 46, 48, 70, 72, 74 and 84 are in their normal state (ie, not actuated) and valves 44, 68 and 82 are in their normal state (note: during this drying phase, the valves 72 and 74, as in the purge stage described above, are not actuated with valve 68 to actuate valves 72 and 74). Various drying gases can be used. Representative examples include: air, nitrogen, carbon dioxide, argon, isopropanol, combinations thereof, and the like. The dry gas may be supplied at a flow rate of 2 to 10 scfm at a temperature of 20 to 30 ° C at a pressure of 10 to 40 psi.
同樣,如所提及的,可單獨使用旋轉乾燥,或可與乾燥氣體之應用組合使用。舉例而言,旋轉乾燥可涉及以5 rpm至500 rpm之範圍中之一或多種速度旋轉轉盤24,同時藉由中心柱20、側槽噴灑柱22、及轉盤24/支撐物26中之一或多者來將乾燥氣體分配於晶圓上。以此方式進行乾燥可繼續任意所需之時間間隔,諸如約5分鐘。Also, as mentioned, spin drying can be used alone or in combination with the application of dry gas. For example, spin drying can involve rotating the turntable 24 at one or more speeds ranging from 5 rpm to 500 rpm while passing through one of the center post 20, the side slot spray column 22, and the turntable 24/support 26 or Many are used to distribute dry gas on the wafer. Drying in this manner can continue for any desired time interval, such as about 5 minutes.
現在將關於以下說明性實例進一步描述本發明。The invention will now be further described with respect to the following illustrative examples.
新的、300 mm、裸露之矽測試晶圓可用於對照實例A及實例1-3中。首先將晶圓自其裝運容器移除並將其裝載入FOUP中,該FOUP用於將測試晶圓傳輸進無塵室中。該FOUP一共包括25個晶圓槽。測試晶圓被裝載入槽1、13及25中,以模擬晶圓填充剩餘的22個槽。一旦將晶圓移入FOUP中,藉由使用一具有型號為SP1-TBI且可自KLA Tencor,San Jose,CA商業獲得之非圖案化晶圓檢查工具而量測晶圓上之缺陷來分析非模擬晶圓之測試晶圓。在程序化晶圓檢測工具來檢測槽1、13及25中之三個測試晶圓後,可將FOUP移入晶圓檢測工具中,其中一次一個將每一測試晶圓(槽1、13及25中之晶圓)自其各自槽移除並進行分析。在自FOUP移除測試晶圓之後,將其移入檢測工具中之掃描腔室中,其中雷射掃描晶圓之缺陷。此方法系統可報導晶圓表面上之任何缺陷的位置及尺寸。此報導經術語化為在處理每一測試晶圓前對缺陷進行"預先計算(pre-count)"。在掃描之後,包括晶圓之FOUP可裝載於用於處理之ZETA噴灑處理器中。ZETA噴灑處理器將25個晶圓自FOUP傳送至具有27個晶圓槽之晶圓處理晶匣中。兩個額外的晶圓槽為晶匣頂部及底部處之覆蓋晶圓提供槽。此原因為確保每一測試晶圓在被處理的同時在其上方具有至少一晶圓及在其下方具有至少一晶圓。由於材料處理系統內部之自動技術,當將晶圓自FOUP移入處理晶匣中時顛倒晶圓之次序。因此,來自FOUP中之槽1之晶圓將置放於處理晶匣中之槽26中,晶圓13將轉至槽14且晶圓25將轉至槽2。噴灑處理器亦要求轉盤保持平衡以當旋轉晶圓時減少潛在的振動。可藉由將另一晶匣置放於與旋轉之轉盤上至第一晶匣相對處而達成此平衡。因為僅有25個晶圓來自FOUP,所以殘留之兩個槽可裝載儲存於材料處理系統中之模擬晶圓。一旦將兩個晶匣裝載入處理腔室中後,則在兩個處理晶匣之間一共分隔有54個晶圓,其包括一個晶匣中之三個測試晶圓。現在,晶圓已準備在自FSI International,Inc.,Chaska,MN商業購得之ZETA噴灑處理器中經受處理方法。A new, 300 mm, bare test wafer can be used in Comparative Example A and Examples 1-3. The wafer is first removed from its shipping container and loaded into the FOUP, which is used to transfer the test wafer into the clean room. The FOUP includes a total of 25 wafer slots. The test wafer is loaded into slots 1, 13 and 25 to simulate wafer filling of the remaining 22 slots. Once the wafer is moved into the FOUP, the non-simulated analysis is performed by measuring a defect on the wafer using a non-patterned wafer inspection tool commercially available from KLA Tencor, San Jose, CA, Model SP1-TBI. Wafer test wafer. After the programmed wafer inspection tool detects three of the test wafers 1, 13, and 25, the FOUP can be moved into the wafer inspection tool, one for each test wafer (slots 1, 13, and 25) Wafers are removed and analyzed from their respective slots. After the test wafer is removed from the FOUP, it is moved into a scanning chamber in the inspection tool where the laser scans for defects in the wafer. This method system can report the location and size of any defects on the wafer surface. This report is termed as "pre-counting" defects before processing each test wafer. After scanning, the FOUP including the wafer can be loaded on the ZETA for processing Spray the processor. ZETA The spray processor transfers 25 wafers from the FOUP to a wafer processing wafer with 27 wafer slots. Two additional wafer slots provide slots for the wafer at the top and bottom of the wafer. The reason for this is to ensure that each test wafer has at least one wafer above it and at least one wafer underneath it while being processed. Due to the automated technology within the material processing system, the order of the wafers is reversed when the wafer is moved from the FOUP into the processing wafer. Thus, the wafer from slot 1 in the FOUP will be placed in slot 26 in the processing wafer, wafer 13 will be transferred to slot 14 and wafer 25 will be transferred to slot 2. Spray processors also require the turntable to be balanced to reduce potential vibration when rotating the wafer. This balance can be achieved by placing another wafer on the rotating turntable opposite the first wafer. Because only 25 wafers are from the FOUP, the remaining two slots can carry the simulated wafers stored in the material handling system. Once the two wafers are loaded into the processing chamber, a total of 54 wafers are separated between the two processing wafers, including three of the wafers. Now, the wafer is ready for commercial use in ZETA from FSI International, Inc., Chaska, MN. The spray processor is subjected to a processing method.
用於處理對照實例A及實例1-3中之晶圓之處理方法被稱為具有由沖洗步驟所隔離之兩步化學步驟的灰化後清洗方法。第二步化學步驟後係最終的沖洗/乾燥步驟。第一步化學步驟涉及硫磺酸及過氧化氫之混合物的處理液體。此處理液體通常被稱為"水虎魚(piranha)"處理。此等化學物品之比率為4份硫磺酸及1份過氧化氫。當混合時,此等兩種化學物會產生一將溶液加熱至約80℃的放熱反應。將此溶液分配於處理腔室中之晶圓(正以60 rpm進行旋轉)上。以約一(1)lpm之流動速率分配該混合物並持續240秒。在"水虎魚(piranha)"處理之後,以約95℃之熱DI水、約17-23℃之冷DI水及氮氣之各種組合來沖洗並淨化晶圓、腔室及波導管。此沖洗之目的為在分配下一次化學物品之前,自該系統完全移除"水虎魚(piranha)"化學藥品之任何痕迹。最後的化學步驟涉及為氫氧化銨、過氧化氫及DI水之混合物的處理液體。此化學步驟通常被稱為"SC1"清洗。以每分鐘約2公升之總流動速率並在約55℃之溫度來分配SC1混合物。可將該混合物分配於處理腔室中之晶圓(正以20至300 rpm之範圍的速度旋轉)上。SC1步驟中之總的化學曝光時間約為235秒。用於SC1混合物之化學稀釋劑通常為1份氫氧化銨、2份過氧化氫及42份DI水。當完成SC1化學步驟時,晶圓將經受一最終的沖洗/乾燥步驟。對照實例A及實例1-3之彼此不同之處僅在於在每一實例中如何執行最終的沖洗/乾燥步驟。一般而言,在最終的沖洗/乾燥步驟期間,以熱DI水、冷DI水及氮氣之各種組合來沖洗並淨化晶圓、波導管及腔室。在最終的沖洗/乾燥步驟結束時,自晶圓、波導管及腔室完全移除DI水使得其完全乾燥。此藉由適當關閉DI沖洗功能且在ZETA噴灑處理器之高速乾燥模式下開啟氮氣功能而完成。下文將詳細描述在對照實例A及實例1-3之最終的沖洗/乾燥步驟期間沖洗與乾燥之間的過渡。一般而言,在ZETA噴灑處理器之最終的乾燥階段期間,藉由轉盤/柱(即,"腔室乾燥"孔)及中心噴灑柱(中心霧化孔及左側孔(即,"晶圓乾燥"孔)來分配氮氣。在最終的乾燥階段期間,當晶圓以約300 rpm旋轉並持續5分鐘時,乾燥晶圓、波導管及處理腔室。使用安裝於ZETA噴灑處理器之側壁上之RTD來量測最終的晶圓溫度。The treatment method for treating the wafers of Comparative Example A and Examples 1-3 is referred to as an after-ash cleaning method having a two-step chemical step isolated by the rinsing step. The second chemical step is followed by the final rinse/drying step. The first chemical step involves a treatment liquid of a mixture of sulfuric acid and hydrogen peroxide. This treatment liquid is often referred to as "piranha" treatment. The ratio of these chemicals is 4 parts of sulfuric acid and 1 part of hydrogen peroxide. When mixed, these two chemicals produce an exothermic reaction that heats the solution to about 80 °C. This solution was dispensed onto the wafer in the processing chamber (which was rotating at 60 rpm). The mixture was dispensed at a flow rate of about one (1) lpm for 240 seconds. After the "piranha" treatment, the wafers, chambers, and waveguides are rinsed and cleaned with various combinations of hot DI water at about 95 °C, cold DI water at about 17-23 °C, and nitrogen. The purpose of this flushing is to completely remove any traces of "piranha" chemicals from the system prior to dispensing the next chemical. The final chemical step involves a treatment liquid that is a mixture of ammonium hydroxide, hydrogen peroxide, and DI water. This chemical step is often referred to as "SC1" cleaning. The SC1 mixture was dispensed at a total flow rate of about 2 liters per minute and at a temperature of about 55 °C. The mixture can be dispensed onto a wafer in the processing chamber (which is rotating at a speed in the range of 20 to 300 rpm). The total chemical exposure time in the SC1 step was about 235 seconds. The chemical diluent used in the SC1 mixture is typically 1 part ammonium hydroxide, 2 parts hydrogen peroxide and 42 parts DI water. When the SC1 chemical step is completed, the wafer will undergo a final rinse/drying step. Comparative Example A and Examples 1-3 differ from each other only in how the final rinse/drying step is performed in each instance. In general, wafers, waveguides, and chambers are rinsed and cleaned with various combinations of hot DI water, cold DI water, and nitrogen during the final rinse/dry step. At the end of the final rinse/drying step, the DI water is completely removed from the wafer, waveguide and chamber so that it is completely dry. This is done by properly turning off the DI flush function and at ZETA This is done by turning on the nitrogen function in the high speed drying mode of the spray processor. The transition between rinsing and drying during the final rinsing/drying steps of Comparative Example A and Examples 1-3 is described in detail below. In general, at ZETA During the final drying phase of the spray processor, nitrogen is dispensed by a turntable/column (ie, "chamber drying" hole) and a central spray column (central atomizing hole and left side hole (ie, "wafer drying" hole) During the final drying phase, the wafer, the waveguide, and the processing chamber are dried as the wafer is rotated at approximately 300 rpm for 5 minutes. Installed on ZETA The RTD on the sidewall of the processor is sprayed to measure the final wafer temperature.
在最終的乾燥完成之後,將晶圓自處理腔室移除且然後將其移回至FOUP中。下一步,可藉由使用一非圖案化晶圓檢測工具量測晶圓上之缺陷而再一次分析槽1、13及25中之測試晶圓。此方法系統掃描晶圓並報導晶圓表面上之任何缺陷的位置及尺寸。此報導可術語化為在處理每一測試晶圓後對缺陷進行"事後計算(post-count)"。After the final drying is complete, the wafer is removed from the processing chamber and then moved back into the FOUP. Next, the test wafers in slots 1, 13, and 25 can be analyzed again by measuring defects on the wafer using a non-patterned wafer inspection tool. This method systematically scans the wafer and reports the location and size of any defects on the wafer surface. This report can be termed as "post-count" of defects after processing each test wafer.
為每一晶圓所收集之數據(即,預先計算及後計算)可表現為一"真實添加物"值及一"增量"值。可藉由計算在"預先計算"報導中未觀察到之晶圓表面上之新位置處所進行的"事後計算"中所報導之缺陷數目來獲得"真實添加物"值。舉例而言,假定在"預先計算"中報導在晶圓表面上X-Y座標分別為1,1及2,2的位置處具有2個缺陷。若在"事後記算"中報導在晶圓表面上X-Y座標為1,1、3,3及4,4之位置處具有3個缺陷,則具有"預先計算"中未報導之新位置的"事後計算"中報導有2個缺陷。因而,此數據之"真實添加物"值將為2。The data collected for each wafer (ie, pre-calculated and post-calculated) can be expressed as a "real additive" value and an "incremental" value. The "real additive" value can be obtained by calculating the number of defects reported in the "post-calculation" performed at a new location on the wafer surface that is not observed in the "pre-computed" report. For example, assume that there are two defects at the position where the X-Y coordinates are 1, 1, and 2, 2 on the wafer surface in "pre-calculation". If there are 3 defects at the position of the X-Y coordinates 1, 1, 3, 3 and 4, 4 on the wafer surface in "post-calculation", there is a new position not reported in "pre-calculation" There are 2 defects reported in the "post-calculation". Thus, the "real additive" value for this data will be 2.
藉由自為每一測試晶圓所報導告之"事後計算"值減去"預先計算"值而獲得"增量"值。舉例而言,若一測試晶圓之"預先計算"值為100且"事後記算"值為90,則該晶圓之"增量"值為-10。The "incremental" value is obtained by subtracting the "pre-calculated" value from the "post-calculation" value reported for each test wafer. For example, if a test wafer has a "pre-calculated" value of 100 and a "post-calculation" value of 90, the wafer has an "incremental" value of -10.
對於對照實例A而言,可在每次運行使用三個測試晶圓來執行48個處理運行(即,一共144個測試晶圓)。在每一處理運行期間且在晶圓經受如上所述之SC1化學步驟之後,晶圓經受習知的最終沖洗/乾燥步驟。習知的沖洗/乾燥步驟包括藉由中心噴灑柱及側槽噴灑柱將冷DI水分配(約20℃)於晶圓上。通過中心噴灑柱之DI水之流率在約6與10 lpm之間(通常約為8 lpm),且通過側槽柱之流動速率約為10 lpm。晶圓以約60 rpm之速度在轉盤上旋轉。藉由中心噴灑柱而分配的DI水可被3 cfm之氮氣在環境溫度及約30-35 psi之壓力下霧化。亦可藉由"腔室乾燥"孔來分配氮氣。此沖洗(即,分配DI水)將繼續30秒。For Comparative Example A, three test wafers can be used per run to perform 48 processing runs (ie, a total of 144 test wafers). The wafer is subjected to a conventional final rinse/drying step during each processing run and after the wafer is subjected to the SC1 chemical step as described above. Conventional rinsing/drying steps include dispensing cold DI water (about 20 ° C) onto the wafer by means of a central spray column and a side channel spray column. The DI water flow rate through the central spray column is between about 6 and 10 lpm (typically about 8 lpm) and the flow rate through the side trough is about 10 lpm. The wafer is rotated on the turntable at approximately 60 rpm. The DI water dispensed by the central spray column can be atomized by 3 cfm of nitrogen at ambient temperature and a pressure of about 30-35 psi. Nitrogen can also be distributed by "chamber drying" holes. This flush (ie, dispensing DI water) will continue for 30 seconds.
在終止分配DI水之後,轉盤之旋轉速度將減慢至10 rpm。在腔室中使用氮氣淨化通向中心噴灑柱及側槽噴灑柱之"晶圓乾燥"孔(即,左側孔)的DI水供應管線並持續90秒。亦可藉由"腔室乾燥"孔來分配氮氣。在淨化90秒之後,轉盤之速度將增加至300 rpm並持續5分鐘。在此5分鐘時期期間,晶圓及腔室將變得乾燥。在最終的乾燥階段結束時晶圓之溫度約高於環境溫度5℃,或為23℃。After the dispensing of DI water is terminated, the rotational speed of the turntable will be slowed down to 10 rpm. The DI water supply line leading to the "wafer drying" holes (i.e., the left side holes) of the center spray column and the side groove spray column was purged in the chamber using nitrogen gas for 90 seconds. Nitrogen can also be distributed by "chamber drying" holes. After 90 seconds of purification, the speed of the turntable will increase to 300 rpm for 5 minutes. During this 5 minute period, the wafer and chamber will become dry. At the end of the final drying stage, the temperature of the wafer is about 5 ° C above ambient temperature, or 23 ° C.
圖2a、2b、3a及3b中說明對照實例A之預先計算及事後計算數據。圖2a中,管線210之左側的數據展示用於48個測試運行之尺寸大於65奈米的"真實添加物"(每一運行為槽1、13及25中三個測試晶圓的平均"真實添加物")。The pre-calculated and post-calculated data of Comparative Example A is illustrated in Figures 2a, 2b, 3a and 3b. In Figure 2a, the data on the left side of line 210 shows "real additives" for sizes greater than 65 nm for 48 test runs (the average of three test wafers in slots 1, 13, and 25 for each run) Addition ").
圖2b中,管線220之左側的數據展示每一運行中任何三個測試晶圓之"真實添加物"值的範圍。舉例而言,若晶圓被添加有-20、25及100個顆粒,則範圍將為120。In Figure 2b, the data on the left side of line 220 shows the range of "real additive" values for any three test wafers in each run. For example, if a wafer is added with -20, 25, and 100 particles, the range will be 120.
圖3a中管線310之左側的數據展示每一運行中尺寸大於65奈米之缺陷的"增量"。圖3b中管線320之左側的數據展示每一運行中任何三個測試晶圓之"增量"值的範圍。The data on the left side of line 310 in Figure 3a shows the "incremental" of defects in each run that are larger than 65 nanometers in size. The data on the left side of line 320 in Figure 3b shows the range of "incremental" values for any three test wafers in each run.
此習知之最終的沖洗/乾燥數據展示所添加之顆粒的顯著範圍。This conventional final rinse/dry data shows a significant range of particles added.
對於每一處理運行且在晶圓經受如上述之SCI化學步驟之後,晶圓可經受根據本發明之最終的沖洗/乾燥步驟。在實例1中執行對照實例A之最終的沖洗/乾燥步驟中持續30秒的沖洗(即,分配DI水),除了沖洗之水的溫度較低之外。最終的沖洗與最終的乾燥之間的過渡不同於對照實例A中的過渡。在30秒結束時,當在腔室中使用氮氣淨化通向中心噴灑柱之"晶圓乾燥"孔(即,左側孔)之DI水供應管線並持續85秒時,轉盤繼續以60 rpm之速度旋轉且繼續自側槽噴灑柱分配DI水。亦可藉由"腔室乾燥"孔來分配氮氣。在淨化85秒之後,轉盤之旋轉速度減慢至10 rpm且可抽吸通向側槽噴灑柱之DI水供應管線以移除供應管線中剩餘的DI水(即,不淨化通入處理腔室之通向側槽噴灑柱之DI水供應管線)。在抽吸側槽噴灑柱之後,轉盤速度增加至300 rpm並持續15分鐘。在此15分鐘時期期間,晶圓及腔室將變得乾燥。最終的乾燥階段結束時晶圓之溫度約與供應至系統之冷DI之溫度相同,其可在17℃及21℃之間變化。The wafer can be subjected to a final rinse/drying step in accordance with the present invention for each process run and after the wafer is subjected to the SCI chemical step as described above. A 30 second rinse (i.e., dispensing DI water) in the final rinse/drying step of Comparative Example A was performed in Example 1, except that the temperature of the rinsed water was low. The transition between the final rinse and the final dry was different from the transition in Comparative Example A. At the end of 30 seconds, the turntable continues at 60 rpm when nitrogen is used to purify the DI water supply line to the "wafer drying" hole (ie, the left side hole) of the center spray column in the chamber for 85 seconds. Rotate and continue to dispense DI water from the side tank spray column. Nitrogen can also be distributed by "chamber drying" holes. After purging for 85 seconds, the rotational speed of the turntable is slowed to 10 rpm and the DI water supply line leading to the side tank spray column can be pumped to remove the remaining DI water in the supply line (ie, no purge into the processing chamber) The DI water supply line to the side tank spray column). After pumping the side slot spray column, the turntable speed was increased to 300 rpm for 15 minutes. During this 15 minute period, the wafer and chamber will become dry. At the end of the final drying stage, the temperature of the wafer is about the same as the temperature of the cold DI supplied to the system, which can vary between 17 ° C and 21 ° C.
對於每一處理運行且在晶圓經受如上述之SC1化學步驟之後,晶圓經受根據本發明之最終的沖洗/乾燥步驟。在實例2中執行對照實例A之最終的沖洗/乾燥步驟中持續30秒的沖洗(即,分配DI水)。最終的沖洗與最終的乾燥之間的過渡不同於對照實例A中的過渡。在30秒結束時,當在腔室中使用氮氣淨化通向中心噴灑柱之"晶圓乾燥"孔(即,左側孔)之DI水供應管線並持續85秒時,轉盤繼續以60 rpm之速度旋轉且繼續自側槽噴灑柱分配DI水。亦可藉由"腔室乾燥"孔分配氮氣。在淨化85秒之後,轉盤之旋轉速度減慢至10 rpm且抽吸通向側槽噴灑柱之DI水供應管線以移除供應管線中剩餘的DI水(即,不淨化通入處理腔室之通向側槽噴灑柱之DI水供應管線)。在抽吸側槽噴灑柱之後,轉盤之速度增加至300 rpm並持續5分鐘。在此5分鐘時期期間,晶圓及腔室將變得乾燥。最終的乾燥階段結束時晶圓之溫度約高於環境溫度5℃,或為23℃。The wafer is subjected to a final rinse/drying step in accordance with the present invention for each process run and after the wafer is subjected to the SC1 chemical step as described above. A 30 second rinse (i.e., dispensing DI water) in the final rinse/drying step of Comparative Example A was performed in Example 2. The transition between the final rinse and the final dry was different from the transition in Comparative Example A. At the end of 30 seconds, the turntable continues at 60 rpm when nitrogen is used to purify the DI water supply line to the "wafer drying" hole (ie, the left side hole) of the center spray column in the chamber for 85 seconds. Rotate and continue to dispense DI water from the side tank spray column. Nitrogen can also be dispensed by "chamber drying" holes. After purging for 85 seconds, the rotational speed of the turntable is slowed to 10 rpm and the DI water supply line leading to the side tank spray column is pumped to remove the remaining DI water in the supply line (ie, not cleaned into the processing chamber) DI water supply line leading to the side tank spray column). After pumping the side slot spray column, the speed of the turntable was increased to 300 rpm for 5 minutes. During this 5 minute period, the wafer and chamber will become dry. At the end of the final drying stage, the temperature of the wafer is approximately 5 ° C above ambient temperature, or 23 ° C.
對於每一處理運行且在晶圓經受如上述之SC1化學步驟之後,晶圓經受根據本發明之最終的沖洗/乾燥步驟。在實例3中執行對照實例A之最終的沖洗/乾燥步驟中持續30秒的沖洗(即,分配DI水),除了沖洗之水的溫度較高之外。最終的沖洗與最終的乾燥之間的過渡不同於對照實例A中的過渡。在30秒結束時,當在腔室中使用氮氣淨化通向中心噴灑柱之"晶圓乾燥"孔(即,左側孔)之DI水供應管線並持續85秒時,轉盤繼續以60 rpm之速度旋轉且繼續自側槽噴灑柱分配DI水。亦可藉由"腔室乾燥"來分配氮氣孔。在淨化85秒之後,轉盤之旋轉速度減慢至10 rpm且抽吸通向側槽噴灑柱之DI水供應管線以移除供應管線中剩餘的DI水(即,不淨化通入處理腔室之通向側槽噴灑柱之DI水供應管線)。在抽吸側槽噴灑柱之後,轉盤之速度增加至300 rpm並持續1分鐘。在此1分鐘時期期間,晶圓及腔室將變得乾燥。藉由使用溫度高達約95℃之沖洗水而使最終的乾燥階段結束時晶圓之溫度顯著高於環境溫度。The wafer is subjected to a final rinse/drying step in accordance with the present invention for each process run and after the wafer is subjected to the SC1 chemical step as described above. A 30 second rinse (i.e., dispensing DI water) in the final rinse/drying step of Comparative Example A was performed in Example 3, except that the temperature of the rinsed water was higher. The transition between the final rinse and the final dry was different from the transition in Comparative Example A. At the end of 30 seconds, the turntable continues at 60 rpm when nitrogen is used to purify the DI water supply line to the "wafer drying" hole (ie, the left side hole) of the center spray column in the chamber for 85 seconds. Rotate and continue to dispense DI water from the side tank spray column. Nitrogen holes can also be dispensed by "chamber drying." After purging for 85 seconds, the rotational speed of the turntable is slowed to 10 rpm and the DI water supply line leading to the side tank spray column is pumped to remove the remaining DI water in the supply line (ie, not cleaned into the processing chamber) DI water supply line leading to the side tank spray column). After pumping the side tank spray column, the speed of the turntable was increased to 300 rpm for 1 minute. During this 1 minute period, the wafer and chamber will become dry. The temperature of the wafer at the end of the final drying stage is significantly higher than the ambient temperature by using rinse water having a temperature of up to about 95 °C.
圖2a、2b、3a及3b中說明實例1-3之預先計算及事後計算數據。圖2a中,管線210之右側的數據展示用於實例1-3中之運行之尺寸大於65奈米的"真實添加物"(每一運行為槽1、13及25中三個測試晶圓的平均"真實添加物")。The pre-calculated and post-calculated data for Examples 1-3 are illustrated in Figures 2a, 2b, 3a and 3b. In Figure 2a, the data on the right side of line 210 shows the "real additions" for the run in Examples 1-3 that are larger than 65 nm (each run is three test wafers in slots 1, 13, and 25). Average "real additive").
圖2b中,管線220之右側的數據展示實例1-3中每一運行中任何三個測試晶圓之"真實添加物"值的範圍。In Figure 2b, the data to the right of line 220 shows the range of "true additive" values for any three test wafers in each run in Examples 1-3.
圖3a中,管線310之右側的數據展示實例1-3中每一運行中尺寸大於65奈米之缺陷的"增量"。圖3b中,管線320之右側的數據展示實例1-3中每一運行中任何三個測試晶圓之"增量"值的範圍。In Figure 3a, the data on the right side of line 310 shows the "incremental" of defects in each of the running examples having dimensions greater than 65 nm in Examples 1-3. In Figure 3b, the data to the right of line 320 shows the range of "incremental" values for any three test wafers in each run in Examples 1-3.
實例1-3之數據表明當使用根據本發明之最終的沖洗/乾燥硬體及程序時,與添加顆粒相關的的改良效能及沖洗之水之溫度的可撓性。The data for Examples 1-3 demonstrate the improved performance associated with the addition of particles and the flexibility of the temperature of the rinse water when using the final rinse/drying hardware and procedure in accordance with the present invention.
當考慮到本說明書或自本文所揭示之本發明之實踐來考慮時,本發明之其它實施例對於熟習此項技術者而言將變得顯而易見。在不脫離由以下申請專利範圍所指示之本發明之真實範疇及精神的情況下,熟習此項技術者可對本文所述之原理及實施例作各種刪减、修改及改變。Other embodiments of the invention will be apparent to those skilled in the <RTIgt; Various modifications, changes and variations of the principles and embodiments described herein may be made by those skilled in the art without departing from the scope of the invention.
10...晶圓處理系統10. . . Wafer processing system
12...噴灑處理器工具12. . . Spray processor tool
14...外殼14. . . shell
16...頂蓋16. . . Top cover
18...腔室18. . . Chamber
20...中心噴灑柱20. . . Center spray column
22...側槽噴灑柱twenty two. . . Side groove spray column
24...轉盤twenty four. . . Turntable
26...支撐柱26. . . Support column
28...載體28. . . Carrier
32...轉軸32. . . Rotating shaft
34...馬達34. . . motor
36...旋轉單元36. . . Rotating unit
39...化學管線39. . . Chemical pipeline
40...供應管線40. . . Supply pipeline
41a、41b、41c、42a、42b、52a、52b、52c、52d、56a、56b、60、62、66、78a、78b、80a、80b...管線41a, 41b, 41c, 42a, 42b, 52a, 52b, 52c, 52d, 56a, 56b, 60, 62, 66, 78a, 78b, 80a, 80b. . . Pipeline
44、46、48、68、70、72、74、82、84...閥門44, 46, 48, 68, 70, 72, 74, 82, 84. . . valve
50、67...汲極50, 67. . . Bungee
51、64...止回閥門51, 64. . . Check valve
58...抽吸器58. . . Aspirator
76...緩衝器76. . . buffer
86...虛線86. . . dotted line
圖1說明根據本發明之噴灑處理器工具之示意圖。Figure 1 illustrates a schematic of a spray processor tool in accordance with the present invention.
圖2a展示代表對比實例A及實例1-3中尺寸大於65奈米之"真實添加物"的圖。Figure 2a shows a graph representing "real additives" having a size greater than 65 nm in Comparative Example A and Examples 1-3.
圖2b展示代表對比實例A及實例1-3中用於每一運行中之任何三個測試晶圓的尺寸大於65奈米之"真實添加物"之範圍的圖。Figure 2b shows a graph representing the range of "true additives" for sizes greater than 65 nanometers for any of the three test wafers in each run in Comparative Example A and Examples 1-3.
圖3a展示代表對比實例A及實例1-3中用於每一運行中尺寸大於65奈米之缺陷的"增量"的圖。Figure 3a shows a graph representing "incremental" for defects in each run size greater than 65 nm in Comparative Example A and Examples 1-3.
圖3b展示代表對比實例A及實例1-3中用於每一運行中之任何三個測試晶圓的"增量"值之範圍的圖。Figure 3b shows a graph representing the range of "incremental" values for any of the three test wafers in each run in Comparative Example A and Examples 1-3.
10...晶圓處理系統10. . . Wafer processing system
12...噴灑處理器工具12. . . Spray processor tool
14...外殼14. . . shell
16...頂蓋16. . . Top cover
18...腔室18. . . Chamber
20...中心噴灑柱20. . . Center spray column
22...側槽噴灑柱twenty two. . . Side groove spray column
24...轉盤twenty four. . . Turntable
26...支撐柱26. . . Support column
28...載體28. . . Carrier
32...轉軸32. . . Rotating shaft
34...馬達34. . . motor
36...旋轉單元36. . . Rotating unit
39...化學管線39. . . Chemical pipeline
40...供應管線40. . . Supply pipeline
41a、41b、41c、42a、42b、52a、52b、52c、52d、56a、56b、60、62、66、78a、78b、80a、80b...管線41a, 41b, 41c, 42a, 42b, 52a, 52b, 52c, 52d, 56a, 56b, 60, 62, 66, 78a, 78b, 80a, 80b. . . Pipeline
44、46、48、68、70、72、74、82、84...閥門44, 46, 48, 68, 70, 72, 74, 82, 84. . . valve
50、67...汲極50, 67. . . Bungee
51、64...止回閥門51, 64. . . Check valve
58...抽吸器58. . . Aspirator
76...緩衝器76. . . buffer
86...虛線86. . . dotted line
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- 2005-05-25 WO PCT/US2005/018615 patent/WO2005123281A2/en active Application Filing
- 2005-05-25 KR KR1020067027222A patent/KR101032296B1/en active IP Right Grant
- 2005-05-25 EP EP05754379A patent/EP1758689A2/en not_active Withdrawn
- 2005-05-25 JP JP2007516514A patent/JP4807528B2/en active Active
- 2005-06-09 TW TW094119071A patent/TWI393177B/en active
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Also Published As
Publication number | Publication date |
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US20050276909A1 (en) | 2005-12-15 |
WO2005123281A2 (en) | 2005-12-29 |
US7556697B2 (en) | 2009-07-07 |
JP2008504674A (en) | 2008-02-14 |
WO2005123281A3 (en) | 2006-05-26 |
CN101001704B (en) | 2016-01-20 |
CN101001704A (en) | 2007-07-18 |
KR101032296B1 (en) | 2011-05-06 |
TW200610041A (en) | 2006-03-16 |
JP4807528B2 (en) | 2011-11-02 |
US20070042110A9 (en) | 2007-02-22 |
EP1758689A2 (en) | 2007-03-07 |
KR20070026643A (en) | 2007-03-08 |
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