CN109827891A - A kind of COP detection method based on SP1 particle test instrument - Google Patents
A kind of COP detection method based on SP1 particle test instrument Download PDFInfo
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- CN109827891A CN109827891A CN201910104676.8A CN201910104676A CN109827891A CN 109827891 A CN109827891 A CN 109827891A CN 201910104676 A CN201910104676 A CN 201910104676A CN 109827891 A CN109827891 A CN 109827891A
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Abstract
The present invention provides a kind of COP detection methods based on SP1 particle test instrument, realize the detection to COP defect by the setting to particle instrument interface parameter using SP1 particle detector.COP detection method of the present invention based on SP1 particle test instrument is more accurate, can reduce erroneous judgement, preferably identifies COP defect.
Description
Technical field
The invention belongs to COP defect detecting technique fields, examine more particularly, to a kind of COP based on SP1 particle test instrument
Survey method.
Background technique
COP is a kind of crystal defect, and some minimum vacancy are shown as in crystal, has certain shape, is polishing
Piece surface exhibits are the pitting that diameter does not wait, these pittings are difficult with cleaning process removal, to polished silicon wafer surface particles degree
It is affected.The present invention often carries out the detection to COP with particle size test instrument SP1 using polished silicon wafer manufactory, according to equipment
The change of the LPDN relative parameters setting of interior detection program, reach can be relatively accurate detect in fixed particle size range
COP quantity.
Summary of the invention
In view of this, the present invention is directed to propose a kind of COP detection method based on SP1 particle test instrument, existing to solve
Equipment to the problem of the detection effect inaccuracy of COP.
In order to achieve the above objectives, the technical scheme of the present invention is realized as follows:
A kind of COP detection method based on SP1 particle test instrument, using SP1 particle detector, by particle instrument interface
The detection to COP defect is realized in the setting of parameter.
Further, as follows to the parameter setting step of SP1 particle instrument:
S1, first according to sequentially successively selection enter Recipe, Classification, Point Defect
Analysis；
S2, into behind the interface Point Defect Analysis, select LPD-N, and choose Enable；
S3, by Below Ratio parameter change be 0 or 0.01；Above Ratio parameter change is between 1.2-1.3
Number, USE select Alg3 in column；
Range is selected in the column S4, Size, W parameter is revised as 0,0.3；N parameter is revised as 0,0.3.
Further, in the step S3, Above Ratio parameter selection 1.25.
Further, according to the parameter of the SP1 particle instrument set, silicon wafer is detected, the LPDN's finally detected
Number is exactly the number of COP defect.
Compared with the existing technology, the COP detection method of the present invention based on SP1 particle test instrument has following excellent
Gesture:
COP detection method of the present invention based on SP1 particle test instrument is more accurate, can reduce erroneous judgement, more preferably
Identification COP defect.
Detailed description of the invention
The attached drawing for constituting a part of the invention is used to provide further understanding of the present invention, schematic reality of the invention
It applies example and its explanation is used to explain the present invention, do not constitute improper limitations of the present invention.In the accompanying drawings:
Fig. 1 is the COP detection method parameter setting schematic diagram based on SP1 particle test instrument described in the embodiment of the present invention；
Fig. 2 is the COP detection method effect diagram based on SP1 particle test instrument described in the embodiment of the present invention.
Specific embodiment
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", "upper", "lower",
The orientation or positional relationship of the instructions such as "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside" is
It is based on the orientation or positional relationship shown in the drawings, is merely for convenience of description of the present invention and simplification of the description, rather than instruction or dark
Show that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore should not be understood as pair
Limitation of the invention.In addition, term " first ", " second " etc. are used for description purposes only, it is not understood to indicate or imply phase
To importance or implicitly indicate the quantity of indicated technical characteristic.The feature for defining " first ", " second " etc. as a result, can
To explicitly or implicitly include one or more of the features.In the description of the present invention, unless otherwise indicated, " multiple "
It is meant that two or more.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood by concrete condition
Concrete meaning in the present invention.
The present invention will be described in detail below with reference to the accompanying drawings and embodiments.
As shown in Figure 1, a kind of COP detection method based on SP1 particle test instrument, using SP1 particle detector, by right
The detection to COP defect is realized in the setting of particle instrument interface parameter.
It is as follows to the parameter setting step of SP1 particle instrument:
S1, first according to sequentially successively selection enter Recipe, Classification, Point
DefectAnalysis；
S2, into behind the interface Point Defect Analysis, select LPD-N, and choose Enable；
S3, by Below Ratio parameter change be 0 or 0.01；Above Ratio parameter change is between 1.2-1.3
Number, USE select Alg3 in column；
Range is selected in the column S4, Size, W parameter is revised as 0,0.3；N parameter is revised as 0,0.3.
In the step S3, Above Ratio parameter selection 1.25.
According to the parameter of the SP1 particle instrument set, silicon wafer is detected, the number of the LPDN finally detected is exactly
The number of COP defect.
As shown in Fig. 2, conventional method is infinitely close to defect sum, COP can not be distinguished well, and this programme can be with
Reduce erroneous judgement, identifies COP defect.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Within mind and principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (4)
1. a kind of COP detection method based on SP1 particle test instrument, it is characterised in that: SP1 particle detector is utilized, by right
The detection to COP defect is realized in the setting of particle instrument interface parameter.
2. the COP detection method according to claim 1 based on SP1 particle test instrument, which is characterized in that SP1 particle
The parameter setting step of instrument is as follows:
S1, first according to sequentially successively selection enter Recipe, Classification, Point Defect Analysis；
S2, into behind the interface Point Defect Analysis, select LPD-N, and choose Enable；
S3, by Below Ratio parameter change be 0 or 0.01；Number of the Above Ratio parameter change between 1.2-1.3,
USE selects Alg3 in column；
Range is selected in the column S4, Size, W parameter is revised as 0,0.3；N parameter is revised as 0,0.3.
3. the COP detection method according to claim 2 based on SP1 particle test instrument, it is characterised in that: the step S3
In, Above Ratio parameter selection 1.25.
4. the COP detection method according to claim 1 to 3 based on SP1 particle test instrument, it is characterised in that: according to
The parameter of the SP1 particle instrument set, detects silicon wafer, and the number of the LPDN finally detected is exactly the number of COP defect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910104676.8A CN109827891A (en) | 2019-02-01 | 2019-02-01 | A kind of COP detection method based on SP1 particle test instrument |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910104676.8A CN109827891A (en) | 2019-02-01 | 2019-02-01 | A kind of COP detection method based on SP1 particle test instrument |
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| CN109827891A true CN109827891A (en) | 2019-05-31 |
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| CN201910104676.8A Pending CN109827891A (en) | 2019-02-01 | 2019-02-01 | A kind of COP detection method based on SP1 particle test instrument |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110261270A (en) * | 2019-07-18 | 2019-09-20 | 西安奕斯伟硅片技术有限公司 | A kind of analysis method and device of Defect |
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| EP1379855A1 (en) * | 2001-02-20 | 2004-01-14 | Cytokinetics | Method and apparatus for automated cellular bioinformatics |
| CN101001704A (en) * | 2004-06-14 | 2007-07-18 | Fsi国际公司 | System and method for carrying out liquid and subsequent drying treatments on one or more wafers |
| CN101024895A (en) * | 2006-01-12 | 2007-08-29 | 硅电子股份公司 | Epitaxial wafer and method for production of epitaxial wafer |
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| CN104316542A (en) * | 2014-11-18 | 2015-01-28 | 天津中环领先材料技术有限公司 | Method for detecting defects of 8-inch polished wafers through light-transmitting mirror |
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| CN110261270A (en) * | 2019-07-18 | 2019-09-20 | 西安奕斯伟硅片技术有限公司 | A kind of analysis method and device of Defect |
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Application publication date: 20190531 |