TWI392878B - Calibration kit and vna calibration procedure of using the same - Google Patents

Description

High-frequency characteristic measurement calibration substrate and vector network analyzer calibration program using the same

The present invention relates to a calibration substrate and a calibration program thereof, and more particularly to a high frequency characteristic measurement calibration substrate and a vector network analyzer calibration program using the same.

As shown in the "Correction Method of Standard Impedance Substrate and Vector Network Analyzer" disclosed in Japanese Patent No. I237120 and FIG. 1, the conventional high-frequency characteristic measurement correction substrate mainly includes a metal core layer M, a first a dielectric layer D1 and a second dielectric layer D2 having an upper surface S1 and a lower surface S2, wherein the first dielectric layer D1 and the second dielectric layer D2 are respectively formed on the dielectric layer D1 The upper surface S1 and the lower surface S2 of the metal core layer M, and the first dielectric layer D1 and the second dielectric layer D2 are respectively formed with a first opening O1 and a second opening O2. An opening O1 and the second opening O2 respectively expose the upper surface S1 and the lower surface S2 of the metal core layer M. When a calibration procedure is to be performed, the probe system of the electrical connection vector network analyzer is The upper surface S1 and the lower surface S2 of the metal core layer M are respectively contacted via the first opening O1 and the second opening O2 to output a measurement signal. However, please refer to FIG. 2, During the process of moving the probe, the probe often hits the inner side wall of the first opening O1 or the second opening O2 due to inadvertent operation. The expensive probe is damaged. In addition, the conventional high-frequency characteristic measurement calibration substrate requires a relatively large fabrication of the first opening O1 and the second opening O2, so that the manufacturing cost is relatively high.

The main object of the present invention is to provide a high-frequency characteristic measurement calibration substrate and a vector network analyzer calibration program using the same, the high-frequency characteristic measurement correction substrate comprising a metal layer, an upper dielectric layer, and a lower dielectric layer. An electrical layer having an upper surface and a lower surface, the upper surface being provided with a first side exposed area, a first side shielding area, and a first side exposed area and the first side a first intermediate shielding area between the side shielding areas, the first side shielding area and the first intermediate shielding area respectively have a first width and a second width, and the lower surface is provided with a second side exposed a second side shielding area between the second side shielding area and the second side shielding area, the second intermediate shielding area corresponding to the upper surface An intermediate shielding area, wherein the second side shielding area and the second intermediate shielding area respectively have a third width and a fourth width, and the sum of the third width and the fourth width is equal to the first width And the sum of the second width, the upper dielectric layer Forming on the upper surface of the metal layer, and covering the first side shielding area and the first intermediate shielding area, the lower dielectric layer is formed on the lower surface of the metal layer, and covers the second side a shielding area and the second intermediate shielding area. The vector network analyzer calibration program includes providing the high frequency characteristic measurement correction substrate; providing a vector network analyzer, the vector network analyzer generating a measurement signal, the vector network analyzer having a first coplanar probe disposed on the upper surface of the metal layer, and a second coplanar probe disposed under the metal layer a surface, and the measurement signal is outputtable through the first coplanar probe and the second coplanar probe; and respectively contacting the first coplanar probe to the first side revealing region and the second The coplanar probe contacts the second side revealing region to input the measuring signal into the metal layer and measure the high frequency characteristic of the metal layer. The high-frequency characteristic measurement calibration substrate of the present invention does not require an opening design, so that the possibility of smashing the probe can be minimized, and since the opening is not required, the high-frequency characteristic measurement correction substrate can be simplified. Production process and production costs.

Referring to FIGS. 3 and 4, a preferred embodiment of the present invention, a high frequency characteristic measurement calibration substrate comprising a metal layer 10, an upper dielectric layer 20, and a lower dielectric layer 30, the metal layer The 10 series has an upper surface 10a and a lower surface 10b. The upper surface 10a is provided with a first side exposed area E1, a first side shielding area L1 and a first side exposed area E1 and the first a first intermediate shielding area M1 between the side shielding areas L1, and the first side shielding area L1 and the first intermediate shielding area M1 respectively have a first width w1 and a second width w2, the lower surface 10b is provided with a pair of second side exposed areas E2 which should be the first side shielding area L1, a pair of second side shielding areas L2 which should be the first side exposed area E1, and one of which is exposed on the second side a second intermediate shielding area M2 between the area E2 and the second side shielding area L2, the second intermediate shielding area M2 corresponding to the first intermediate shielding area M1 of the upper surface 10a, and the second side shielding The area L2 and the second intermediate shielding area M2 respectively have a third width w3 and a fourth width w4. In this embodiment, the third The sum of the degree w3 and the fourth width w4 is equal to the sum of the first width w1 and the second width w2, so that the high-frequency characteristic measurement correction substrate has a symmetrical structure, which contributes to an increase in the high-frequency characteristic amount. For the stability of the measurement, please refer to FIGS. 3 and 4, the upper dielectric layer 20 is formed on the upper surface 10a of the metal layer 10, and covers the first side shielding area L1 and the first intermediate shielding area. M1, and the lower dielectric layer 30 is formed on the lower surface 10b of the metal layer 10, and covers the second side shielding area L2 and the second intermediate shielding area M2. Further, in this embodiment, the The metal layer 10 has a signal line 11 and at least one grounding line 12. The signal line 11 has a first test end 11a, a second test end 11b and a connection with respect to the first test end 11a. The first test end portion 11a and the first signal transmitting portion 11c of the second test end portion 11b. In this embodiment, the first test end portion 11a is located at the first side exposed area of the upper surface 10a. E1, the second test end portion 11b is located on the second side revealing region E2 of the lower surface 10b, and the upper dielectric layer 20 The lower dielectric layer 30 covers the first signal transmitting portion 11c of the signal line 11. Further, please refer to FIGS. 3 and 4, the grounding line 12 has a third testing end portion 12a, a relative to the a fourth test end portion 12b of the third test end portion 12a and a second signal transmission portion 12c connecting the third test end portion 12a and the fourth test end portion 12b. In this embodiment, the third test end The portion 12a is located on the first side exposed area E1 of the upper surface 10a, and the fourth test end 12b is located on the second side exposed area E2 of the lower surface 10b, and the upper dielectric layer 20 and The lower dielectric layer 30 covers the second signal transmission portion 12c of the ground line 12. The high-frequency characteristic measurement calibration substrate of the present invention can minimize the possibility of smashing the probe due to the non-opening design, and the high-frequency characteristic measurement correction substrate can be simplified because no opening is required. Production process and production costs.

Please refer to Figures 4, 5, 6 and 7 for the vector network analyzer calibration procedure of the present invention. First, referring to steps (a) and 4 of FIG. 5, a high-frequency characteristic measurement correction substrate is provided. The high-frequency characteristic measurement correction substrate includes a metal layer 10, an upper dielectric layer 20, and a lower layer. The dielectric layer 30 has an upper surface 10a and a lower surface 10b. The upper surface 10a is provided with a first side exposed area E1, a first side shielding area L1 and a first side. a first intermediate shielding area M1 between the side exposed area E1 and the first side shielding area L1, and the first side shielding area L1 and the first intermediate shielding area M1 respectively have a first width w1 and a a second width w2, the lower surface 10b is provided with a pair of second side revealing regions E2 corresponding to the first side shielding area L1, and a pair of second side shielding areas L2 corresponding to the first side revealing area E1 and a second intermediate shielding area M2 between the second side exposed area E2 and the second side shielding area L2, the second intermediate shielding area M2 corresponding to the first intermediate shielding area M1 of the upper surface 10a And the second side shielding area L2 and the second intermediate shielding area M2 have a third width w3 and a fourth width w4, respectively. In an embodiment, the sum of the third width w3 and the fourth width w4 is equal to the sum of the first width w1 and the second width w2, so that the high-frequency characteristic measurement correction substrate has a symmetrical structure, which has For improving the stability of the high-frequency characteristic measurement, please refer to FIG. 4 again, the upper dielectric layer 20 is formed on the upper surface 10a of the metal layer 10, and covers the first side shielding area L1 and the a first intermediate shielding layer M1, and the lower dielectric layer 30 is formed on the lower surface 10b of the metal layer 10, and covers the second side shielding area L2 and the second intermediate shielding area M2; In steps (b) and 6 of FIG. 5, a vector network analyzer 50 is provided. The vector network analyzer 50 can generate a quantity of test signals, and the vector network analyzer 50 has a first coplanarity. a probe 51 and a second coplanar probe 52 disposed on the upper surface 10a of the metal layer 10, the second coplanar probe 52 being disposed on the metal layer 10 The lower surface 10b, and the measurement signal can be output through the first coplanar probe 51 and the second coplanar probe 52; finally, please Referring to steps (c) and 7 of FIG. 5, the first coplanar probe 51 is respectively in contact with the first side exposed area E1 and the second coplanar probe 52 is in contact with the second side exposed area. E2, the measurement signal is input to the metal layer 10 and the high frequency characteristic of the metal layer 10 is measured.

The scope of the present invention is defined by the scope of the appended claims, and any changes and modifications made by those skilled in the art without departing from the spirit and scope of the invention are within the scope of the present invention. .

10. . . Metal layer

10a. . . Upper surface

10b. . . lower surface

11. . . Signal line

11a. . . First test end

11b. . . Second test end

11c. . . First signal transmission unit

12. . . Ground line

12a. . . Third test end

12b. . . Fourth test end

12c. . . Second signal transmission unit

20. . . Upper dielectric layer

30. . . Lower dielectric layer

50. . . Vector network analyzer

51. . . First coplanar probe

52. . . Second coplanar probe

E1. . . First side revealing area

E2. . . Second side revealing area

L1. . . First side shelter area

L2. . . Second side shelter area

M1. . . First intermediate shelter

M2. . . Second intermediate shelter

W1. . . First width

W2. . . Second width

W3. . . Third width

W4. . . Fourth width

M. . . Metal core layer

S1. . . Upper surface

S2. . . lower surface

D1. . . First dielectric layer

D2. . . Second dielectric layer

O1. . . First opening

O2. . . Second opening

(a). . . Providing a high frequency characteristic measurement correction substrate

(b). . . Providing a vector network analyzer, the vector network analyzer capable of generating a quantity of signal signals, the vector network analyzer having a first coplanar probe and a second coplanar probe, the first total a planar probe is disposed on the upper surface of the metal layer, the second coplanar probe is disposed on the lower surface of the metal layer, and the measurement signal is via the first coplanar probe and the first Two common plane probe output

(c). . . Contacting the first coplanar probe with the first side revealing region and contacting the second coplanar probe with the second side revealing region to input the measuring signal into the metal layer and measuring the metal layer High frequency characteristics

Fig. 1 is a schematic view showing the structure of a conventional high-frequency characteristic measurement calibration substrate.

Figure 2: Schematic diagram of the situation in which a striker occurs during the conventional calibration process.

Fig. 3 is a perspective view showing the structure of a high-frequency characteristic measurement correction substrate according to a preferred embodiment of the present invention.

Fig. 4 is a cross-sectional view showing the structure of the high-frequency characteristic measurement correction substrate taken along line A-A of Fig. 3.

Figure 5 is a flow chart of a vector network analyzer calibration procedure in accordance with a preferred embodiment of the present invention.

Figure 6 is a schematic illustration of a program for providing a vector network analyzer in accordance with a preferred embodiment of the present invention.

Figure 7 is a schematic illustration of a procedure for contacting a first coplanar probe with a first side revealing region and a second coplanar probe with a second side revealing region, respectively, in accordance with a preferred embodiment of the present invention.

10. . . Metal layer

10a. . . Upper surface

10b. . . lower surface

11. . . Signal line

11a. . . First test end

11b. . . Second test end

11c. . . First signal transmission unit

12. . . Ground line

12a. . . Third test end

12b. . . Fourth test end

12c. . . Second signal transmission unit

20. . . Upper dielectric layer

30. . . Lower dielectric layer

Claims (14)

A high-frequency characteristic measurement calibration substrate comprising: a metal layer having an upper surface and a lower surface, wherein the upper surface is provided with a first side exposed area, a first side shielding area, and a a first intermediate shielding area between the first side exposed area and the first side shielding area, wherein the first side shielding area and the first intermediate shielding area respectively have a first width and a second width. The lower surface is provided with a second side exposed area, a second side shielding area, and a second intermediate shielding area between the second side exposed area and the second side shielding area, the second The intermediate shielding area corresponds to the first intermediate shielding area of the upper surface, and the second side shielding area and the second intermediate shielding area respectively have a third width and a fourth width, and the third width and the The sum of the fourth width is equal to the sum of the first width and the second width; an upper dielectric layer is formed on the upper surface of the metal layer, and covers the first side shielding area and the first An intermediate shielding region; and a lower dielectric layer formed on the metal layer Surface, and covering the second side of the second intermediate region and a shielding region of the shielding. The high frequency characteristic measurement calibration substrate according to claim 1, wherein the metal layer has a signal line and at least one ground line, the signal line has a first test end, and the first a second test end of the test end and a first signal transmission portion connecting the first test end and the second test end, the first test end being located on the first side of the upper surface The exposed area is located at the second side exposed area of the lower surface. The high frequency characteristic measurement calibration substrate according to claim 2, wherein the upper dielectric layer and the lower dielectric layer cover the first signal transmission portion of the signal line. The high frequency characteristic measurement calibration substrate according to claim 2, wherein the ground circuit has a third test end, a fourth test end relative to the third test end, and a connection a third test end portion and a second signal transmitting portion of the fourth test end portion, the third test end portion is located on the first side exposed area of the upper surface, and the fourth test end portion is located on the lower surface The second side revealing area. The high frequency characteristic measurement calibration substrate according to claim 4, wherein the upper dielectric layer and the lower dielectric layer cover the second signal transmission portion of the ground line. The high frequency characteristic measurement calibration substrate according to claim 1, wherein the second side shielding area of the lower surface corresponds to the first side exposure area of the upper surface. The high frequency characteristic measurement calibration substrate of claim 1, wherein the second side revealing region of the lower surface corresponds to the first side masking region of the upper surface. A vector network analyzer calibration program includes: providing a high frequency characteristic measurement correction substrate, wherein the high frequency characteristic measurement correction substrate comprises a metal layer, an upper dielectric layer and a lower dielectric layer, the metal layer The utility model has an upper surface and a lower surface, wherein the upper surface is provided with a first side exposed area, a first side shielding area and a first side edge exposed area and the first side side shielding area. a first intermediate shielding area, the first side shielding area and the first intermediate shielding area respectively have a first width and a second width, and the lower surface is provided with a second side revealing area and a second side a side shielding area and a second intermediate shielding area between the second side revealing area and the second side shielding area, the second intermediate shielding area corresponding to the first intermediate shielding area of the upper surface, and The second side shielding area and the second intermediate shielding area respectively have a third width and a fourth width, and the sum of the third width and the fourth width is equal to the first width and the second width. And the upper dielectric layer is formed on the metal layer And covering the first side shielding area and the first intermediate shielding area, the lower dielectric layer is formed on the lower surface of the metal layer and covering the second side shielding area and the second intermediate shielding area; Providing a vector network analyzer, the vector network analyzer capable of generating a quantity of signal signals, the vector network analyzer having a first coplanar probe and a second coplanar probe, the first total a planar probe is disposed on the upper surface of the metal layer, the second coplanar probe is disposed on the lower surface of the metal layer, and the measurement signal is via the first coplanar probe and the first a second common plane probe output; and respectively contacting the first coplanar probe to the first side revealing region and contacting the second coplanar probe to the second side revealing region to input the measuring signal The metal layer and measuring the high frequency characteristics of the metal layer. The vector network analyzer calibration procedure of claim 8, wherein the metal layer has a signal line and at least one ground line, the signal line having a first test end and a relative to the first a second test end of the test end and a first signal transmission portion connecting the first test end and the second test end, the first test end being located on the first side of the upper surface The exposed area is located at the second side exposed area of the lower surface. The vector network analyzer calibration procedure of claim 9, wherein the upper dielectric layer and the lower dielectric layer cover the first signal transmission portion of the signal line. The vector network analyzer calibration program of claim 9, wherein the ground circuit has a third test end, a fourth test end relative to the third test end, and a connection. a third test end portion and a second signal transmitting portion of the fourth test end portion, the third test end portion is located on the first side exposed area of the upper surface, and the fourth test end portion is located on the lower surface The second side revealing area. The vector network analyzer calibration procedure of claim 11, wherein the upper dielectric layer and the lower dielectric layer cover the second signal transmission portion of the ground line. The vector network analyzer calibration procedure of claim 8, wherein the second side masking region of the lower surface corresponds to the first side revealing region of the upper surface. The vector network analyzer calibration procedure of claim 8, wherein the second side revealing region of the lower surface corresponds to the first side masking region of the upper surface.