TWI384334B - Baking apparatus, baking method and method of reducing space - Google Patents
Baking apparatus, baking method and method of reducing space Download PDFInfo
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Description
本發明是有關於一種半導體的裝置及半導體的製程方法，且特別是有關於微影製程中之烘烤裝置、烘烤的方法以及縮小間隙的方法。The present invention relates to a semiconductor device and a semiconductor processing method, and more particularly to a baking device in a lithography process, a baking method, and a method of reducing a gap.
在積體電路蓬勃發展的今日，元件縮小化與集積化是必然之趨勢，也是各界積極發展的重要課題，而其中之關鍵技術就是微影製程。Today, with the development of integrated circuits, component shrinkage and accumulation are inevitable trends, and they are also important topics for active development. The key technology is the lithography process.
在微影製程中，已知烘烤的溫度分佈會影響關鍵尺寸(critical dirnension；CD)的均勻性，每變動1℃約影響5nm的線寬。一般而言，烘烤裝置均設置有多個加熱單元，藉以將溫度變化控制在+/-0.2℃之間，但不可避免地，對同一基板而言，基板上不同位置所承受的烘烤溫度之變化幅度(range)仍高達0.4℃。In the lithography process, it is known that the temperature distribution of the baking affects the uniformity of the critical dimension (CD), which affects the line width of 5 nm for every 1 °C change. In general, the baking device is provided with a plurality of heating units, thereby controlling the temperature variation between +/- 0.2 ° C, but inevitably, the baking temperature of the same substrate on different positions on the substrate The range of variation is still as high as 0.4 °C.
隨著積體電路製程進入奈米(nm)世代，例如對目前的65奈米以下製程而言，0.4℃的溫度變化已經足以造成關鍵尺寸的變異，因而影響半導體元件的良率(yield)與性能。因此，如何使得烘烤的溫度較為一致，進而增加關鍵尺寸的均勻性，已成為目前業界相當重視的課題之一。As the integrated circuit process enters the nanometer (nm) generation, for example, for the current 65 nm process, the temperature change of 0.4 °C is sufficient to cause critical size variations, thus affecting the yield of semiconductor components and performance. Therefore, how to make the baking temperature more consistent, and thus increase the uniformity of key dimensions, has become one of the topics that the industry has paid much attention to.
另外，以目前的半導體製程技術而言，想要將微影製程之解析度提高至65奈米以下，是相當困難的，除非使用波長更短之光源以及可配合所用波長之光阻。如此一來，廠房很可 能必須付出相當大的成本來更替相配合的新機台。因此，如何使用現有的機台來達到縮小關鍵尺寸的目標，也是業界努力的目標之一。In addition, in the current semiconductor process technology, it is quite difficult to increase the resolution of the lithography process to below 65 nm unless a shorter wavelength source and a photoresist that can match the wavelength used are used. As a result, the factory is very It is necessary to pay a considerable cost to replace the new machine. Therefore, how to use the existing machine to achieve the goal of reducing the critical size is also one of the goals of the industry.
本發明提供一種烘烤裝置，可以對基板提供均勻的烘烤溫度，避免因溫度不均而引起之半導體元件的良率與性能的下降。The present invention provides a baking apparatus which can provide a uniform baking temperature to a substrate to avoid a decrease in yield and performance of the semiconductor element due to temperature unevenness.
本發明又提供一種烘烤的方法，可以使得烘烤的溫度較為一致，進而增加關鍵尺寸的均勻性。The invention further provides a method of baking which makes the baking temperature relatively uniform, thereby increasing the uniformity of key dimensions.
本發明另提供一種縮小間隙的方法，可在不需更動廠房任何硬體設備下，均勻性地縮小半導體元件的關鍵尺寸。The present invention further provides a method of reducing the gap, which can uniformly reduce the critical dimensions of the semiconductor component without any need to change the hardware of the plant.
本發明提供一種烘烤裝置，包括加熱板與基板旋轉構件。加熱板具有加熱表面。基板旋轉構件包括旋轉環與多數個支撐臂。旋轉環環繞在加熱板的外圍。這些支撐臂位於加熱板的加熱表面上方。各支撐臂包括連接部與支撐部，其中，連接部連接旋轉環與支撐部，且支撐部的支撐表面高於加熱板的加熱表面，用以支撐基板。The present invention provides a baking apparatus comprising a heating plate and a substrate rotating member. The heating plate has a heated surface. The substrate rotating member includes a rotating ring and a plurality of support arms. The rotating ring surrounds the periphery of the heating plate. These support arms are located above the heated surface of the heating plate. Each support arm includes a connecting portion and a supporting portion, wherein the connecting portion connects the rotating ring and the supporting portion, and the supporting surface of the supporting portion is higher than the heating surface of the heating plate for supporting the substrate.
依照本發明的實施例所述，上述之加熱板之加熱表面中更具有環狀凹槽，且支撐部的一部分更延伸至環狀凹槽中。According to an embodiment of the invention, the heating surface of the heating plate has an annular groove, and a portion of the support portion extends into the annular groove.
依照本發明的實施例所述，上述之支撐部的支撐表面高於加熱表面0.1~0.2mm。According to an embodiment of the invention, the support surface of the support portion is higher than the heating surface by 0.1 to 0.2 mm.
依照本發明的實施例所述，上述之烘烤裝置更包括多 數個支撐銷，這些支撐銷與加熱板的加熱表面呈垂直配置，用以支撐且上下移動基板。According to an embodiment of the invention, the baking device described above further comprises A plurality of support pins that are vertically disposed with the heating surface of the heating plate to support and move the substrate up and down.
依照本發明的實施例所述，上述之烘烤裝置更包括驅動單元，耦接至旋轉環，用以轉動旋轉環而帶動旋轉基板。According to an embodiment of the invention, the baking device further includes a driving unit coupled to the rotating ring for rotating the rotating ring to drive the rotating substrate.
依照本發明的實施例所述，上述之烘烤裝置更包括至少一加熱單元，用以加熱加熱板。According to an embodiment of the invention, the baking device further comprises at least one heating unit for heating the heating plate.
本發明又提供一種烘烤的方法。首先，提供一基板，此基板上具有一光阻層。然後，對此光阻層進行一動態烘烤。在進行動態烘烤時，加熱板維持不動，但配置於加熱板上的基板保持轉動。The invention further provides a method of baking. First, a substrate is provided having a photoresist layer thereon. Then, a dynamic baking is performed on the photoresist layer. When the dynamic baking is performed, the heating plate is kept stationary, but the substrate disposed on the heating plate is kept rotating.
依照本發明的實施例所述，於進行動態烘烤時，上述之基板的轉速例如是介於2至20 rprn之間。According to an embodiment of the invention, when the dynamic baking is performed, the rotation speed of the substrate is, for example, between 2 and 20 rprn.
依照本發明的實施例所述，於進行動態烘烤時，上述之基板旋轉例如是2至10個週期。According to an embodiment of the present invention, when the dynamic baking is performed, the substrate rotation is, for example, 2 to 10 cycles.
依照本發明的實施例所述，上述之動態烘烤為鄰近式烘烤，基板不與加熱板接觸。According to an embodiment of the invention, the dynamic baking described above is adjacent baking, and the substrate is not in contact with the heating plate.
本發明另提供一種縮小導線間隙的方法。首先，提供一基板，此基板上具有一圖案化光阻層，且此圖案化光阻層具有多數個圖案。然後，進行一動態烘烤，使此圖案化光阻層向這些圖案之間的間隙流動。於進行動態烘烤時，加熱板維持不動，但配置於加熱板上的基板保持轉動。The present invention further provides a method of reducing the gap of a wire. First, a substrate is provided having a patterned photoresist layer thereon, and the patterned photoresist layer has a plurality of patterns. Then, a dynamic baking is performed to cause the patterned photoresist layer to flow toward the gap between the patterns. When the dynamic baking is performed, the heating plate is kept stationary, but the substrate disposed on the heating plate is kept rotating.
依照本發明的實施例所述，上述之進行動態烘烤的溫度例如是介於140℃到160℃之間。According to an embodiment of the invention, the temperature at which the above-described dynamic baking is performed is, for example, between 140 ° C and 160 ° C.
依照本發明的實施例所述，上述之進行動態烘烤的溫 度例如是高於圖案化光阻層的玻璃轉換溫度(Tg )。According to an embodiment of the invention, the temperature at which the dynamic baking is performed is, for example, higher than the glass transition temperature (T g ) of the patterned photoresist layer.
依照本發明的實施例所述，於進行動態烘烤時，上述之基板的轉速例如是介於2至20 rprn之間。According to an embodiment of the invention, when the dynamic baking is performed, the rotation speed of the substrate is, for example, between 2 and 20 rprn.
依照本發明的實施例所述，於進行動態烘烤時，上述之基板旋轉例如是2至10個週期。According to an embodiment of the present invention, when the dynamic baking is performed, the substrate rotation is, for example, 2 to 10 cycles.
依照本發明的實施例所述，上述之動態烘烤為鄰近式烘烤，基板不與加熱板接觸。According to an embodiment of the invention, the dynamic baking described above is adjacent baking, and the substrate is not in contact with the heating plate.
本發明提供的烘烤裝置，利用動態烘烤的方式，可以對基板提供均勻的烘烤溫度。此烘烤裝置可應用在烘烤的方法上，使得烘烤的溫度較為一致，進而增加關鍵尺寸的均勻性。此烘烤裝置也可應用在縮小間隙的方法上，可在不需更動廠房任何硬體設備下，均勻性地縮小半導體元件的關鍵尺寸。The baking device provided by the invention can provide a uniform baking temperature to the substrate by means of dynamic baking. The baking device can be applied to the baking method so that the baking temperature is relatively uniform, thereby increasing the uniformity of the critical dimensions. The baking device can also be applied to the method of narrowing the gap, and can uniformly reduce the critical size of the semiconductor component without any need to change the hardware of the plant.
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.
圖1是依照本發明之一實施例所繪示的一種烘烤裝置於承載基板時的上視示意圖。圖2是圖1的側面透視圖，其右上方為局部放大示意圖。圖3是依照本發明之一實施例所繪示的一種烘烤裝置的上視示意圖。1 is a top plan view of a baking apparatus when a substrate is carried in accordance with an embodiment of the invention. Fig. 2 is a side perspective view of Fig. 1 with a top enlarged view on the upper right side. 3 is a top plan view of a baking apparatus according to an embodiment of the invention.
請參照圖1，烘烤裝置(baking apparatus)100包括加熱板(hot plate)102與基板旋轉構件(substrate rotation rnember)104。加熱板102是用來加熱基板103，而基板旋 轉構件104是用來旋轉位於加熱板102上方的基板103。Referring to FIG. 1 , a baking apparatus 100 includes a hot plate 102 and a substrate rotation rnember 104 . The heating plate 102 is used to heat the substrate 103, and the substrate is rotated The rotating member 104 is for rotating the substrate 103 located above the heating plate 102.
加熱板102具有加熱表面106。基板旋轉構件104包括旋轉環(rotation ring)108及多數個支撐臂(support arm)110。旋轉環108配置成環繞在加熱板102的外圍。多數個支撐臂110位於加熱板102的加熱表面106上方，分別連接至旋轉環108。各支撐臂110包括連接部112與支撐部114。連接部112連接旋轉環108與支撐部114。支撐部114具有支撐表面116高於加熱板102的加熱表面106，用以支撐基板103的背面之邊緣，使基板103與加熱板102的加熱表面106保持一定距離，以進行鄰近式烘烤(proximity baking)。The heating plate 102 has a heating surface 106. The substrate rotating member 104 includes a rotation ring 108 and a plurality of support arms 110. The rotating ring 108 is configured to surround the periphery of the heating plate 102. A plurality of support arms 110 are located above the heating surface 106 of the heating plate 102 and are coupled to the rotating ring 108, respectively. Each support arm 110 includes a connecting portion 112 and a support portion 114. The connecting portion 112 connects the rotating ring 108 and the support portion 114. The support portion 114 has a support surface 116 higher than the heating surface 106 of the heating plate 102 for supporting the edge of the back surface of the substrate 103 to maintain the substrate 103 at a distance from the heating surface 106 of the heating plate 102 for proximity baking (proximity) Baking).
在一實施例中，加熱板102之加熱表面106中還具有環狀凹槽(ring shape trench)107，且這些支撐部114的一部份115(如圖2中虛線標示區域)更延伸至環狀凹槽107中。此外，如圖2所示，環狀凹槽107的寬度W1設計成大於支撐部114的一部份115的寬度W2，如此一來，環狀凹槽107與支撐部114的一部份115之間才存在足夠的空間，能夠避免在加熱過程中因熱應力(thermal stress)或機械應力(mechanical stress)而導致兩者相互磨損。In an embodiment, the heating surface 106 of the heating plate 102 further has a ring shape trench 107, and a portion 115 of the supporting portion 114 (as indicated by a broken line in FIG. 2) extends to the ring. In the groove 107. In addition, as shown in FIG. 2, the width W1 of the annular groove 107 is designed to be larger than the width W2 of a portion 115 of the support portion 114, such that the annular groove 107 and a portion 115 of the support portion 114 are There is enough space between them to avoid mutual wear due to thermal stress or mechanical stress during heating.
另外，烘烤裝置100還可以包括多數個支撐銷(support pin)118，這些支撐銷118與加熱板102的加熱表面106呈垂直配置，用以支撐且上下移動基板103。這些支撐銷118用以移動基板103至上升位置或下降位置(未繪示)。上升位置例如是用以裝載或卸下基板103；而下降位置例如是 用以加熱基板103，且這些支撐銷118的頂面(top)於下降位置時與加熱表面106大致等高。Additionally, the toasting apparatus 100 can also include a plurality of support pins 118 that are disposed perpendicular to the heating surface 106 of the heating plate 102 for supporting and moving the substrate 103 up and down. These support pins 118 are used to move the substrate 103 to a raised position or a lowered position (not shown). The rising position is, for example, for loading or unloading the substrate 103; and the falling position is, for example, The substrate 103 is heated, and the top surface of the support pins 118 is substantially equal to the heating surface 106 when it is in the lowered position.
請參照圖3，在一實施例中，烘烤裝置100也可以包括耦接至旋轉環108的驅動單元120，用以轉動旋轉環108而帶動旋轉基板103。在一實施例中，烘烤裝置100也可以包括至少一加熱單元122，用以加熱加熱板102。也就是說，加熱板102可以分割為多個區塊(segment)102a、102b、102c及102d，每一區塊分別對應至一加熱單元122。在一實施例中，這些加熱單元可以將溫度變化控制在+/-0.2℃以內。Referring to FIG. 3 , in an embodiment, the baking apparatus 100 may further include a driving unit 120 coupled to the rotating ring 108 for rotating the rotating ring 108 to drive the rotating substrate 103 . In an embodiment, the baking apparatus 100 may also include at least one heating unit 122 for heating the heating plate 102. That is, the heating plate 102 can be divided into a plurality of segments 102a, 102b, 102c, and 102d, each of which corresponds to a heating unit 122. In an embodiment, these heating units can control temperature variations to within +/- 0.2 °C.
特別要說明的是，本發明的烘烤裝置100的烘烤方式為一動態烘烤(dynamic baking)，在加熱過程中利用轉動基板103的方式，可以將加熱板102上不同區塊之間的溫度差異藉由旋轉基板103而平均掉。也就是說，習知的烘烤裝置因為只能進行靜態烘烤(static baking)，當加熱板上的不同區塊之間存在溫度差異時，此溫度差異會永遠存在，而且會高達0.4℃。相反地，本發明的烘烤裝置100，藉由動態烘烤平均掉溫度差異，可以將區塊之間的溫度差異降到0.2℃以下，提升的溫度均勻度約達50%。In particular, the baking method of the baking apparatus 100 of the present invention is a dynamic baking, and between the different blocks on the heating plate 102, by rotating the substrate 103 during the heating process. The temperature difference is averaged off by rotating the substrate 103. That is to say, conventional baking devices can only perform static baking. When there is a temperature difference between different blocks on the heating plate, this temperature difference will always exist and will be as high as 0.4 °C. Conversely, in the baking apparatus 100 of the present invention, the temperature difference between the blocks can be reduced to less than 0.2 ° C by dynamic baking to average the temperature difference, and the elevated temperature uniformity is about 50%.
另外，在加熱過程中，基板103位於加熱板102的上方，其中，基板103由基板旋轉構件104的支撐部114的支撐表面116所支持。因為支撐部114的支撐表面116高於加熱板102的加熱表面104例如是大約0.1~0.2 mm，也就是說基板103與加熱板102非常靠近並不接觸，為一鄰 近式烘烤(proximity baking)。此種作法的優點不但可以使加熱板102產生的熱均勻分佈至基板103，也可以避免製程中掉落至加熱板102的微粒(particle)接觸到基板103而污染基板103。In addition, the substrate 103 is positioned above the heating plate 102 during heating, wherein the substrate 103 is supported by the support surface 116 of the support portion 114 of the substrate rotating member 104. Because the support surface 116 of the support portion 114 is higher than the heating surface 104 of the heating plate 102, for example, about 0.1 to 0.2 mm, that is, the substrate 103 is in close proximity to the heating plate 102 and is not in contact with each other. Proximity baking. The advantage of this method is that the heat generated by the heating plate 102 can be uniformly distributed to the substrate 103, and the particles falling into the heating plate 102 in the process can be prevented from contacting the substrate 103 to contaminate the substrate 103.
另外，熟知本技藝者也應了解，本發明的烘烤裝置100可以與習知的構件相結合，如反應室(chamber)、氣體供應源、氣體排放系統(exhaust system)等等，只要在不脫離本發明的精神或應用範圍內，均可以適當地被結合運用。In addition, those skilled in the art should also understand that the baking apparatus 100 of the present invention can be combined with conventional components such as a chamber, a gas supply source, an exhaust system, etc., as long as it is not Any combination of the spirit and the application of the invention may be employed as appropriate.
以下，將說明微影製程中烘烤的方法。圖4為根據本發明之一實施例所繪示之一種烘烤的方法的流程示意圖。Hereinafter, a method of baking in a lithography process will be explained. 4 is a schematic flow chart of a method of baking according to an embodiment of the invention.
請參照圖4，首先，進行步驟402，提供基板，基板例如為晶圓，且晶圓上具有光阻層。然後，進行步驟404，對此光阻層進行動態烘烤，其中加熱板維持不動，但配置於加熱板上的基板保持轉動。此動態烘烤可以是一鄰近式烘烤，基板不與加熱板接觸。在一實施例中，本發明提供之烘烤的方法可以在例如是烘烤裝置100(如圖1所示)中進行。Referring to FIG. 4, first, step 402 is performed to provide a substrate, such as a wafer, and having a photoresist layer on the wafer. Then, step 404 is performed to dynamically bake the photoresist layer, wherein the heater board remains stationary, but the substrate disposed on the heater board remains rotated. This dynamic baking can be an adjacent baking and the substrate is not in contact with the heating plate. In one embodiment, the method of baking provided by the present invention can be carried out, for example, in a baking apparatus 100 (shown in Figure 1).
另外，在進行動態烘烤之前與之後，也可以對此光阻層分別進行一靜態烘烤，如圖4的步驟403以及步驟405所示。舉例來說，可以進行一烘烤程式(recipe)，此烘烤程式包括以下至少三個步驟：首先，在基板不轉動的條件下進行第一次靜態烘烤，烘烤時間介於0.5秒到1.0秒之間。接著，在基板轉動的條件下進行動態烘烤，其中，烘烤時間介於60秒到120秒之間，基板的轉速例如是介於2至 20 rpm之間，或者基板在動態烘烤的烘烤時間內例如是旋轉2至10個週期(cycle)。接著，在基板不轉動的條件下進行第二次靜態烘烤，烘烤時間介於0.5秒到1.0秒之間。In addition, a static baking may be performed on the photoresist layer before and after the dynamic baking, as shown in step 403 and step 405 of FIG. For example, a recipe can be performed. The baking program includes at least three steps: first, the first static baking is performed without rotating the substrate, and the baking time is between 0.5 seconds. Between 1.0 seconds. Then, dynamic baking is performed under the condition that the substrate is rotated, wherein the baking time is between 60 seconds and 120 seconds, and the rotation speed of the substrate is, for example, 2 to Between 20 rpm, or the substrate is rotated for 2 to 10 cycles, for example, during the baking time of the dynamic baking. Next, a second static baking is performed without rotating the substrate, and the baking time is between 0.5 seconds and 1.0 seconds.
本發明提供之烘烤的方法，藉由動態烤的方式，可以使得烘烤的溫度較為一致，進而增加關鍵尺寸的均勻性，避免因烘烤的溫度不均而造成的關鍵尺寸變異。也就是說，藉由本發明提供之烘烤的方法，可提升溫度均勻度約達50%，因此，關鍵尺寸的均勻性也相對提升約50%。The baking method provided by the invention can make the baking temperature more consistent by the dynamic baking method, thereby increasing the uniformity of the key dimensions and avoiding the critical size variation caused by the uneven temperature of the baking. That is to say, with the baking method provided by the present invention, the temperature uniformity can be improved by about 50%, and therefore, the uniformity of the critical dimensions is relatively increased by about 50%.
接下來，將說明一種縮小間隙(gap width)的方法。圖5為根據本發明之一實施例所繪示之一種縮小間隙的方法的流程示意圖。圖6A與6B為根據本發明之一實施例所繪示之圖案化光阻層的流動示意圖。Next, a method of reducing the gap width will be explained. FIG. 5 is a schematic flow chart of a method for reducing a gap according to an embodiment of the invention. 6A and 6B are flow diagrams of a patterned photoresist layer according to an embodiment of the invention.
請參照圖5與圖6A，首先，進行步驟502，提供基板203，基板203例如為晶圓，且晶圓上具有圖案化光阻層205。此圖案化光阻層205具有多數個圖案，且這些圖案之間的間隙207的寬度為L1。Referring to FIG. 5 and FIG. 6A , first, step 502 is performed to provide a substrate 203 , such as a wafer, and having a patterned photoresist layer 205 on the wafer. The patterned photoresist layer 205 has a plurality of patterns, and the width of the gap 207 between the patterns is L1.
然後，請參照圖5，進行步驟504，對圖案化光阻層205進行動態烘烤，其中加熱板維持不動，但配置於加熱板上的基板保持轉動。此動態烘烤可以是一鄰近式烘烤，基板不與加熱板接觸。在一實施例中，本發明提供之縮小間隙的方法可以在例如是烘烤裝置100(如圖1所示)中進行。Then, referring to FIG. 5, step 504 is performed to dynamically bake the patterned photoresist layer 205, wherein the heating plate remains stationary, but the substrate disposed on the heating plate remains rotated. This dynamic baking can be an adjacent baking and the substrate is not in contact with the heating plate. In one embodiment, the method of reducing the gap provided by the present invention can be performed, for example, in a baking apparatus 100 (shown in Figure 1).
本發明提供之縮小間隙的方法，其動態烘烤可以在硬烤(hard baking；HB)製程階段來實施，而此硬烤製程例如 是安排在光阻顯影後或蝕刻前。此動態烘烤的溫度高於圖案化光阻層205的玻璃轉換溫度(Tg )，例如是介於140℃到160℃之間。當溫度高於圖案化光阻層205的玻璃轉換溫度時，圖案化光阻層205將向其彼此之間的間隙207流動。如圖6B所示，圖案化光阻層205因熱流製程(thermal reflow process)而變形為205'，這些圖案之間的間隙207'也縮小為L2。The method for reducing the gap provided by the present invention can be carried out in a hard baking (HB) process, for example, after the photoresist development or before etching. The temperature of this dynamic bake is higher than the glass transition temperature ( Tg ) of the patterned photoresist layer 205, for example between 140 °C and 160 °C. When the temperature is higher than the glass transition temperature of the patterned photoresist layer 205, the patterned photoresist layer 205 will flow toward the gap 207 between them. As shown in FIG. 6B, the patterned photoresist layer 205 is deformed into 205' by a thermal reflow process, and the gap 207' between these patterns is also reduced to L2.
另外，在進行動態烘烤時，基板203的轉速例如是介於2至20 rpm之間，或者基板203在動態烘烤的烘烤時間內例如是旋轉2至10個週期(cycle)。如此一來，因為基板203受熱均勻，間隙縮小的情形也會較為一致。Further, when dynamic baking is performed, the rotation speed of the substrate 203 is, for example, between 2 and 20 rpm, or the substrate 203 is rotated by, for example, 2 to 10 cycles during the baking time of the dynamic baking. In this way, since the substrate 203 is uniformly heated, the gap is reduced.
因此，本發明提供之縮小導線間隙的方法，可在不需更動廠房任何硬體設備下，利用動態烘烤的熱流方式，均勻性地縮小半導體元件的關鍵尺寸。如此一來，可大量節省成本，提升競爭力。Therefore, the method for reducing the gap of the wire provided by the present invention can uniformly reduce the critical size of the semiconductor component by using a hot-flow method of dynamic baking without changing any hardware device of the plant. As a result, significant cost savings and increased competitiveness can be achieved.
綜上所述，本發明提供之烘烤裝置利用加熱板維持不動，基板保持轉動之動態烘烤製程，可以應用於烘烤的方法，使得烘烤的溫度較為一致，進而增加關鍵尺寸的均勻性。此烘烤裝置也可以應用在縮小間隙的方法上，可在不需更動廠房任何硬體設備下，利用動態烘烤的熱流方式，均勻性地縮小半導體元件的關鍵尺寸。In summary, the baking device provided by the present invention maintains the dynamic baking process by using the heating plate and the substrate remains rotating, and can be applied to the baking method, so that the baking temperature is relatively uniform, thereby increasing the uniformity of the key dimensions. . The baking device can also be applied to the method of narrowing the gap, and can uniformly reduce the critical size of the semiconductor component by using a dynamic baking heat flow method without any hardware device of the plant.
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾， 因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. , Therefore, the scope of the invention is defined by the scope of the appended claims.
100‧‧‧烘烤裝置100‧‧‧ baking device
102‧‧‧加熱板102‧‧‧heating plate
102a、102b、102c、102d‧‧‧區塊Blocks 102a, 102b, 102c, 102d‧‧‧
103‧‧‧基板103‧‧‧Substrate
104‧‧‧基板旋轉構件104‧‧‧Substrate rotating member
106‧‧‧加熱表面106‧‧‧heated surface
107‧‧‧環狀凹槽107‧‧‧ annular groove
108‧‧‧旋轉環108‧‧‧Rotating ring
110‧‧‧支撐臂110‧‧‧Support arm
112‧‧‧連接部112‧‧‧Connecting Department
114‧‧‧支撐部114‧‧‧Support
115‧‧‧支撐部的一部分115‧‧‧Part of the support department
116‧‧‧支撐表面116‧‧‧Support surface
118‧‧‧支撐銷118‧‧‧Support pin
120‧‧‧驅動單元120‧‧‧ drive unit
122‧‧‧加熱單元122‧‧‧heating unit
203‧‧‧基板203‧‧‧Substrate
205、205’‧‧‧圖案化光阻層205, 205'‧‧‧ patterned photoresist layer
207、207’‧‧‧間隙207, 207’ ‧ ‧ gap
402、403、404、405、502、504‧‧‧步驟402, 403, 404, 405, 502, 504 ‧ ‧ steps
W1、W2、L1、L2‧‧‧寬度W1, W2, L1, L2‧‧‧ width
圖1是依照本發明之一實施例所繪示的一種烘烤裝置於承載基板時的上視示意圖。1 is a top plan view of a baking apparatus when a substrate is carried in accordance with an embodiment of the invention.
圖2是圖1的側面透視圖。Figure 2 is a side perspective view of Figure 1.
圖3是依照本發明之一實施例所繪示的一種烘烤裝置的上視示意圖。3 is a top plan view of a baking apparatus according to an embodiment of the invention.
圖4為根據本發明的之一實施例所繪示之一種烘烤的方法的流程示意圖。4 is a flow chart showing a method of baking according to an embodiment of the present invention.
圖5為根據本發明之一實施例所繪示之一種縮小間隙的方法的流程示意圖。FIG. 5 is a schematic flow chart of a method for reducing a gap according to an embodiment of the invention.
圖6A與6B為根據本發明之一的實施例所繪示之圖案化光阻層的形變示意圖。6A and 6B are schematic views showing the deformation of a patterned photoresist layer according to an embodiment of the present invention.
100‧‧‧烘烤裝置100‧‧‧ baking device
102‧‧‧加熱板102‧‧‧heating plate
103‧‧‧基板103‧‧‧Substrate
104‧‧‧基板旋轉構件104‧‧‧Substrate rotating member
106‧‧‧加熱表面106‧‧‧heated surface
107‧‧‧環狀凹槽107‧‧‧ annular groove
108‧‧‧旋轉環108‧‧‧Rotating ring
110‧‧‧支撐臂110‧‧‧Support arm
112‧‧‧連接部112‧‧‧Connecting Department
114‧‧‧支撐部114‧‧‧Support
115‧‧‧支撐部的一部分115‧‧‧Part of the support department
116‧‧‧支撐表面116‧‧‧Support surface
118‧‧‧支撐銷118‧‧‧Support pin
Claims (16)
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| TW200534063A (en) * | 2003-12-29 | 2005-10-16 | Tokyo Electron Ltd | Methods for adaptive real time control of a thermal processing system |
| US20080008460A1 (en) * | 2001-11-07 | 2008-01-10 | Timans Paul J | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
| TW200811919A (en) * | 2006-08-17 | 2008-03-01 | Fujitsu Ltd | Process for forming resist pattern, semiconductor device and manufacturing method for the same |
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| US20080008460A1 (en) * | 2001-11-07 | 2008-01-10 | Timans Paul J | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
| TW200534063A (en) * | 2003-12-29 | 2005-10-16 | Tokyo Electron Ltd | Methods for adaptive real time control of a thermal processing system |
| TW200811919A (en) * | 2006-08-17 | 2008-03-01 | Fujitsu Ltd | Process for forming resist pattern, semiconductor device and manufacturing method for the same |
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