TWI383965B - A ceramic material for a ceramic ceramic container, a method for manufacturing the same, and a method for producing the same - Google Patents

A ceramic material for a ceramic ceramic container, a method for manufacturing the same, and a method for producing the same Download PDF

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TWI383965B
TWI383965B TW97124390A TW97124390A TWI383965B TW I383965 B TWI383965 B TW I383965B TW 97124390 A TW97124390 A TW 97124390A TW 97124390 A TW97124390 A TW 97124390A TW I383965 B TWI383965 B TW I383965B
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layer
firing
ceramic capacitor
tool material
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TW200920714A (en
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Hiroshi Okada
Satoshi Ooya
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Covalent Materials Corp
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Description

積層陶瓷電容器燒成用工具材料、其製造方法及再生方法Tool material for laminating ceramic capacitor firing, manufacturing method thereof and regeneration method

本發明係關於一種於積層陶瓷電容器(Multiple-Layer Ceramic Capacitor;以下稱為MLCC)之燒成或熱處理步驟中使用之定位器(setter)、架板、匣缽等SiC質工具材料(SiC-based material)及其製造方法、再生方法。The present invention relates to a SiC tool material (SiC-based) such as a setter, a shelf, and a crucible used in a firing or heat treatment step of a multiple-layer ceramic capacitor (hereinafter referred to as MLCC). Material), its manufacturing method, and regeneration method.

電子零件用陶瓷之燒成或熱處理通常係於1000~1400℃之溫度範圍內進行。因此,作為其燒成用工具材料,係使用富鋁紅柱石(Al2 O3 -SiO2 )基、Al2 O3 -SiO2 -MgO基、MgO-Al2 O3 -ZrO2 基、碳化矽(SiC)基等耐熱性優良之陶瓷。該等陶瓷中,尤其以SiC質陶瓷為較佳之材料,其耐熱強度以及耐蠕變性優良。The firing or heat treatment of ceramics for electronic parts is usually carried out at a temperature ranging from 1000 to 1400 °C. Therefore, as a tool material for firing, a mullite (Al 2 O 3 -SiO 2 ) group, an Al 2 O 3 -SiO 2 -MgO group, a MgO-Al 2 O 3 -ZrO 2 group, and carbonization are used. A ceramic having excellent heat resistance such as a bismuth (SiC) group. Among these ceramics, SiC-based ceramics are particularly preferable as materials which are excellent in heat resistance and creep resistance.

然而,例如燒成以鈦酸鋇(BaTiO3 )為主成分之MLCC等時,若例如將作為被燒成物之MLCC直接載置於上述SiC質陶瓷之燒成用工具材料上,而使該MLCC與該燒成用工具材料接觸,則當溫度為1100℃以上時,上述MLCC將與上述工具材料之SiC反應,MLCC易產生變色等燒結異常或融著。However, for example, when MLCC having barium titanate (BaTiO 3 ) as a main component is fired, for example, the MLCC as a burned material is directly placed on the tool material for firing of the SiC ceramic. When the MLCC is in contact with the tool material for firing, when the temperature is 1100 ° C or higher, the MLCC reacts with the SiC of the tool material, and the MLCC is liable to cause sintering abnormality or fusion such as discoloration.

另一方面,於MLCC之燒成時,必須在不使電極材料氧化之條件下,對作為主成分之氧化物BaTiO3 進行燒成。因此,爐內環境中之氧分壓係重要因素,然而於使用SiC質陶瓷之燒成用工具材料之情形時,有時會由於SiC之氧化反應,而導致爐內之氧分壓產生變動。On the other hand, in the firing of MLCC, it is necessary to fire the oxide BaTiO 3 as a main component without oxidizing the electrode material. Therefore, the partial pressure of oxygen in the furnace environment is an important factor. However, in the case of using a tool material for firing of SiC ceramics, the oxygen partial pressure in the furnace may fluctuate due to the oxidation reaction of SiC.

因此,於MLCC之燒成時,先前係使用由抗反應性優良之ZrO2 等之陶瓷而構成表面之工具材料,具體而言,係使用由Al2 O3 、ZrO2 等之陶瓷而覆蓋陶瓷基材表面者。Therefore, in the case of firing of MLCC, a tool material which is formed of a ceramic such as ZrO 2 excellent in reactivity resistance to form a surface is used, and specifically, a ceramic is covered with a ceramic such as Al 2 O 3 or ZrO 2 . The surface of the substrate.

如此之被覆材係藉由使用於陶瓷基材上塗佈所需之陶瓷漿料後以高溫加以燒接之方法、CVD(Chemical Vapor Deposition,化學氣相沈積)法、熔射法等而形成被膜來獲得。該等方法中,熔射法由於可獲得難以剝離之被膜,故而尤其多被使用。Such a coated material is formed by a method of applying a ceramic slurry required for coating a ceramic substrate to a high temperature, a method of sintering at a high temperature, a CVD (Chemical Vapor Deposition) method, a sputtering method, or the like. Come to get. Among these methods, the spray method is particularly useful because a film that is difficult to peel off can be obtained.

具體而言,例如於專利文獻1、2等之中,揭示有於耐熱強度以及耐蠕變性優良之SiC質陶瓷基材表面熔射有Al2 O3 、Al2 O3 -SiC、ZrO2 等之燒成用工具材料(熱處理用夾具)。Specifically, for example, in Patent Documents 1 and 2, it is disclosed that Al 2 O 3 , Al 2 O 3 -SiC, and ZrO 2 are sprayed on the surface of a SiC-based ceramic substrate excellent in heat resistance and creep resistance. A tool material for firing (such as a heat treatment jig).

又,於專利文獻3中,揭示有利用ZrO2 或Al2 O3 來熔射覆蓋表面形成有SiO2 層之高孔隙度之SiC質基材之燒成用工具材料。Further, Patent Document 3 discloses a material for firing a SiC substrate having a high porosity in which an SiO 2 layer is formed by using ZrO 2 or Al 2 O 3 .

[專利文獻1]日本專利特開2001-278685號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2001-278685

[專利文獻2]日本專利特開2003-306392號公報[Patent Document 2] Japanese Patent Laid-Open Publication No. 2003-306392

[專利文獻3]日本專利特開2006-117472號公報[Patent Document 3] Japanese Patent Laid-Open Publication No. 2006-117472

[專利文獻4]日本專利特開2002-145671號公報[Patent Document 4] Japanese Patent Laid-Open Publication No. 2002-145671

然而,上述專利文獻1中所記載之燒成用工具材料之SiC質陶瓷基材係孔隙度較低之緻密體,為使熔射膜密著,必須使表面粗糙化,故而步驟煩雜,且亦需耗費成本。However, the SiC-based ceramic substrate of the tool material for firing described in Patent Document 1 is a dense body having a low porosity, and the surface of the dense film must be roughened in order to make the spray film adhere to each other. It costs a lot.

另一方面,於MLCC之燒成時,為降低成本,需要藉由爐內空間之有效使用、迅速升溫來提高生產效率等。因此,對於燒成用工具材料,要求其薄壁化、低熱容量化,但具有如上述專利文獻2中所記載之構成之多層燒成用工具材料,其薄壁化程度有限。On the other hand, in the case of firing of the MLCC, in order to reduce the cost, it is necessary to increase the production efficiency by effectively using the furnace space and rapidly increasing the temperature. For this reason, the tool material for firing is required to have a reduced thickness and a low heat capacity. However, the tool material for multilayer firing having the configuration described in Patent Document 2 described above has a limited degree of thinning.

又,以BaTiO3 為主成分之晶片形MLCC由於近年來之顯著小型化,而易於受到燒成時之爐內環境之變動的影響,即便係上述專利文獻3中所記載之燒成用工具材料,亦無法充分防止因如上所述之SiC基材之氧化反應等而產生之變色等燒結異常。尤其不可斷言其適於重複使用。In addition, the wafer-shaped MLCC containing BaTiO 3 as a main component is significantly reduced in size in recent years, and is easily affected by fluctuations in the furnace environment during firing, and is even the material for firing described in Patent Document 3 Also, it is not possible to sufficiently prevent the sintering abnormality such as discoloration caused by the oxidation reaction or the like of the SiC substrate as described above. In particular, it cannot be asserted that it is suitable for repeated use.

此外,專利文獻1之工具材料在使用過程中,基材自身極少發生破裂或翹曲,但有時會由於皮膜剝離或者與被燒成品發生反應而無法再利用。無法再利用之工具材料之基材自身可再利用,因而就降低使用工具材料之燒成成本以及減少廢棄物之觀點而言,廢棄較不佳。Further, in the tool material of Patent Document 1, the substrate itself rarely ruptures or warps during use, but it may not be reused due to peeling of the film or reaction with the finished product. The substrate of the tool material that cannot be reused can be reused by itself, and thus the waste is less preferable from the viewpoint of reducing the firing cost of the tool material and reducing the waste.

因此,較好的是如專利文獻4中所記載之發明般,對工具材料進行再利用。Therefore, it is preferable to reuse the tool material as in the invention described in Patent Document 4.

專利文獻4中所記載之工具材料之再生方法,係於如SiC為97%、視孔隙度為0%之緻密質SiC質基材之表面,形成有以Al2 O3 、Al2 O3 -SiO2 、ZrO2 、及MgAl2 O3 (尖晶石)中之至少一種或複數種為主成分之陶瓷被膜之工具材料的再生方法,該再生方法係於數次使用該工具材料之後,於緻密質SiC質基材之表面電漿熔射30~500 μm之陶瓷被膜而加以再生。The method for regenerating the tool material described in Patent Document 4 is based on a surface of a dense SiC substrate having a SiC of 97% and an apparent porosity of 0%, and is formed of Al 2 O 3 or Al 2 O 3 - a method for regenerating a tool material of at least one of SiO 2 , ZrO 2 , and MgAl 2 O 3 (spinel) or a plurality of ceramic coatings having a main component, the regeneration method being performed after using the tool material several times The surface of the dense SiC substrate is sprayed with a ceramic film of 30 to 500 μm to be regenerated.

如此之再生方法適於使用緻密質SiC質基材之工具材料的再生,但並不適於使用多孔質SiC質基材之工具材料之再生。又,為去除皮膜並再生,去除皮膜後之SiC質基材表面之表面粗糙度必須為3~15 μm左右,然而根據用途之不同,有時SiC質表面之凸部會因氧化、或與被燒成物成分發生反應而導致強度降低,若去除皮膜,則無法獲得充分之表面粗糙度。Such a regeneration method is suitable for regeneration of a tool material using a dense SiC substrate, but is not suitable for regeneration of a tool material using a porous SiC substrate. Further, in order to remove the film and regenerate, the surface roughness of the surface of the SiC substrate after the film removal is required to be about 3 to 15 μm. However, depending on the application, the convex portion of the surface of the SiC may be oxidized or When the components of the burned material react, the strength is lowered, and if the film is removed, sufficient surface roughness cannot be obtained.

由於SiC之硬度非常高,故而利用噴擊等機械的粗糙化方法難以應對再次之粗糙化處理。雖可使用化學蝕刻等進行再次之粗糙化處理,但使用後之基材存在表面強度降低、被燒成物成分滲透等現象,故而其粗糙化程度會因產品使用歷程之不同而不同。於固定條件下難以獲得穩定之粗糙面,必須根據基材之使用狀況而調整蝕刻條件,因此成本提高。Since the hardness of SiC is extremely high, it is difficult to cope with the roughening treatment by a mechanical roughening method such as spraying. Although the roughening treatment can be performed again by chemical etching or the like, the substrate after use has a phenomenon in which the surface strength is lowered and the components to be fired are infiltrated, and the degree of roughening varies depending on the course of use of the product. It is difficult to obtain a stable rough surface under a fixed condition, and it is necessary to adjust the etching conditions according to the use condition of the substrate, so that the cost is increased.

本發明係為解決上述技術性問題研製而成者,其目的在於提供一種MLCC燒成用工具材料、其製造方法以及再生方法,可提高燒成時之節能化以及生產效率,且亦適於重複使用,故可降低成本。The present invention has been made to solve the above-mentioned technical problems, and an object of the invention is to provide a tool material for MLCC firing, a method for producing the same, and a method for regenerating the same, which can improve energy saving and production efficiency during firing, and is also suitable for repetition. Use, so you can reduce costs.

本發明之第1發明提供一種積層陶瓷電容器燒成用工具材料,其特徵在於,具有SiC基材、以及形成於上述SiC基材表面上之SiO2 層,且上述積層陶瓷電容器燒成用工具材料之視孔隙度為15%以上,視比重為3.05~3.20,SiC含量為90重量%以上,並且於至少載置作為被燒成物之積層陶 瓷電容器之部分的SiO2 層表面上,形成有包含ZrO2 或Al2 O3 中之至少任一者之被覆層。藉由使用具備如上所述之構成之工具材料,可抑制基材SiC之氧化,且伴隨著氧化反應而產生之氧氣濃度之變動較小,並且可防止作為被燒成物之MLCC之變色等燒結異常。According to a first aspect of the present invention, there is provided a SiC substrate and an SiO 2 layer formed on a surface of the SiC substrate, and the laminated ceramic capacitor firing tool material is provided. The apparent porosity is 15% or more, the specific gravity is 3.05 to 3.20, the SiC content is 90% by weight or more, and the surface of the SiO 2 layer is formed on at least a portion of the multilayer ceramic capacitor as the fired material. A coating layer of at least one of ZrO 2 or Al 2 O 3 . By using the tool material having the above-described configuration, oxidation of the substrate SiC can be suppressed, and fluctuations in oxygen concentration accompanying the oxidation reaction are small, and sintering such as discoloration of the MLCC as a burned material can be prevented. abnormal.

根據本發明之第2發明,提供一種積層陶瓷電容器燒成用工具材料,其特徵在於,具有SiC基材、以及形成於上述SiC基材表面上之SiO2 層,且上述積層陶瓷電容器燒成用工具材料之視孔隙度為15%以上,視比重為3.05~3.20,SiC含量為90重量%以上,並且於至少載置作為被燒成物之積層陶瓷電容器之部分的上述SiO2 層表面上,具有藉由熔射法而形成之包含ZrO2 或Al2 O3 中之至少任一者之被覆層,且於上述SiO2 層與上述被覆層之間,形成有包含Al2 O3 或Al2 O3 -SiO2 中之至少任一者之中間層。藉由上述中間層,可減小具有SiO2 層之SiC基材與被覆層之熱膨脹差,而提高被覆層之抗剝離效果,又,藉由熔射膜,可提高該被覆層之密著性。According to a second aspect of the present invention, there is provided a SiC substrate and an SiO 2 layer formed on a surface of the SiC substrate, and the laminated ceramic capacitor is fired. The tool material has a apparent porosity of 15% or more, an apparent specific gravity of 3.05 to 3.20, a SiC content of 90% by weight or more, and a surface of the SiO 2 layer on which at least a portion of the multilayer ceramic capacitor as the fired material is placed. a coating layer comprising at least one of ZrO 2 or Al 2 O 3 formed by a sputtering method, and comprising Al 2 O 3 or Al 2 between the SiO 2 layer and the coating layer An intermediate layer of at least one of O 3 -SiO 2 . By the intermediate layer, the difference in thermal expansion between the SiC substrate having the SiO 2 layer and the coating layer can be reduced, and the peeling resistance of the coating layer can be improved, and the adhesion of the coating layer can be improved by the spray film. .

根據本發明之第3發明,提供一種積層陶瓷電容器燒成用工具材料,其特徵在於,具有SiC基材、以及形成於上述SiC基材表面上之SiO2 層,且上述積層陶瓷電容器燒成用工具材料之視孔隙度為15%以上,視比重為3.05~3.20,SiC含量為90重量%以上,並且,上述SiO2 層係藉由上述SiC基材表面之氧化而形成,且於至少載置作為被燒成物之積層陶瓷電容器之部分的上述SiO2 層表面上,形成有包 含ZrO2 或Al2 O3 中之至少任一者之被覆層。藉由氧化處理,可容易地形成牢固的SiO2 層。According to a third aspect of the present invention, there is provided a SiC base material and an SiO 2 layer formed on a surface of the SiC base material, wherein the laminated ceramic capacitor is fired. The tool material has a apparent porosity of 15% or more, an apparent specific gravity of 3.05 to 3.20, a SiC content of 90% by weight or more, and the SiO 2 layer is formed by oxidation of the surface of the SiC substrate, and is disposed at least. A coating layer containing at least one of ZrO 2 or Al 2 O 3 is formed on the surface of the SiO 2 layer as a part of the multilayer ceramic capacitor of the fired material. A strong SiO 2 layer can be easily formed by an oxidation treatment.

根據本發明之第4發明,提供一種上述積層陶瓷電容器燒成用工具材料,其中相對於上述SiC基材中之SiC與上述SiO2 層中之SiO2 之總含量,上述SiO2 層中之SiO2 之含量為1~4重量%。若SiO2 量處於上述範圍內,則可於SiC基材之SiC結晶表面充分地形成SiO2 層,又,可保持耐熱強度。According to the fourth aspect of the present invention, there is provided a multilayer ceramic capacitor above the tool material for firing, in which the total content of SiO SiC SiC substrate of the above-mentioned SiO 2 layer 2, the SiO 2 layer of SiO with respect to the above-described The content of 2 is 1 to 4% by weight. When the amount of SiO 2 is in the above range, the SiO 2 layer can be sufficiently formed on the SiC crystal surface of the SiC substrate, and the heat resistance can be maintained.

根據本發明之第5發明,提供一種積層陶瓷電容器燒成用工具材料之製造方法,其特徵在於包括如下步驟:於SiC粉末原料中添加燒結後之殘碳率未達5.0重量%之量之有機黏合劑並加以混合,以獲得混合粉末之步驟;於上述混合物中添加水後加以捏合而成形,以獲得多孔質成形體之步驟;以1500℃以上、2400℃以下之溫度燒結上述多孔質成形體,以獲得燒結體之步驟;於氧氣濃度為2%以上之氧氣環境下,以1350℃以上、1650℃以下之溫度燒成上述燒結體1小時以上、6小時以下,而於該燒結體表面形成SiO2 層之步驟;以及於上述SiO2 層表面上,藉由熔射法而形成包含ZrO2 或Al2 O3 中之至少任一者之被覆層之步驟。According to a fifth aspect of the present invention, there is provided a method of producing a tool material for firing a multilayer ceramic capacitor, comprising the steps of: adding an organic carbon in a SiC powder raw material to a residual carbon ratio of less than 5.0% by weight after sintering a step of mixing and mixing the powder to obtain a mixed powder; adding water to the mixture and kneading to form a porous formed body; and sintering the porous formed body at a temperature of 1500 ° C or higher and 2400 ° C or lower The step of obtaining a sintered body; firing the sintered body at a temperature of 1350 ° C or higher and 1650 ° C or lower for 1 hour or longer and 6 hours or less in an oxygen atmosphere having an oxygen concentration of 2% or more, and forming the sintered body on the surface of the sintered body a step of forming a SiO 2 layer; and forming a coating layer containing at least one of ZrO 2 or Al 2 O 3 by a sputtering method on the surface of the SiO 2 layer.

藉由如此之製造方法,可較佳獲得上述本發明之MLCC燒成用工具材料。According to such a production method, the above-described MLCC baking tool material of the present invention can be preferably obtained.

根據本發明之第6發明,提供一種積層陶瓷電容器燒成用工具材料之再生方法,其特徵在於,其係如上述第1發明之積層陶瓷電容器燒成用工具材料之再生方法,上述積層陶瓷電容器燒成用工具材料之再生方法係於使用數次上 述燒成用工具材料後,進行如下步驟:去除形成於上述SiC基材之表面之上述SiO2 層及上述被覆層之步驟;於上述SiC基材之表面上重新形成SiO2 層之步驟;以及於重新形成之上述SiO2 層之表面上,再形成厚度為30 μm以上、500 μm以下之以Al2 O3 、ZrO2 、Al2 O3 -SiO2 、及ZrSiO4 中之至少一種或複數種為主成分之被覆層的步驟。According to a sixth aspect of the present invention, there is provided a method of regenerating a tool material for firing a multilayer ceramic capacitor according to the first aspect of the invention, wherein the laminated ceramic capacitor The method for regenerating the tool material for firing is a step of removing the SiO 2 layer and the coating layer formed on the surface of the SiC substrate after the polishing tool material is used several times; re is formed on the surface of the sheet of the step of SiO 2 layers; and on the upper surface of the SiO 2 layer of the re-formed, the re-formed in a thickness of less than 30 μm, 500 μm or less them with Al 2 O 3, ZrO 2, Al 2 O 3 a step of at least one of SiO 2 and ZrSiO 4 or a plurality of coating layers as a main component.

根據本發明之第7發明,提供一種積層陶瓷電容器燒成用工具材料之再生方法,其特徵在於,其係如上述第1發明之積層陶瓷電容器燒成用工具材料之再生方法,上述積層陶瓷電容器燒成用工具材料之再生方法係於數次使用上述燒成用工具材料後,進行如下步驟:去除形成於上述SiC基材之表面之上述SiO2 層及上述被覆層之步驟;於氧化環境中以1350℃以上之溫度進行2小時以上之加熱處理,藉此於上述SiC基材之表面重新形成SiO2 層之步驟;以及於重新形成之上述SiO2 層之表面上,再形成厚度為30 μm以上、500 μm以下之以Al2 O3 、ZrO2 、Al2 O3 -SiO2 、及ZrSiO4 中之至少一種或複數種為主成分之被覆層的步驟。According to a seventh aspect of the present invention, there is provided a method of regenerating a tool material for firing a multilayer ceramic capacitor according to the first aspect of the invention, wherein the laminated ceramic capacitor The method for regenerating the tool material for firing is to remove the SiO 2 layer and the coating layer formed on the surface of the SiC substrate after the polishing tool material is used several times; in an oxidizing environment at a temperature of 1350 deg.] C for more than 2 hours of a heat treatment, whereby the surface of the SiC substrate in the step of re-forming of the SiO 2 layer; and to the upper surface of the SiO 2 layer of the re-formed, re-formed in a thickness of 30 μm The step of using at least one of a plurality of Al 2 O 3 , ZrO 2 , Al 2 O 3 —SiO 2 , and ZrSiO 4 or a plurality of coating layers as a main component of 500 μm or less.

根據本發明之第8發明,提供一種積層陶瓷電容器燒成用工具材料之再生方法,其特徵在於,其係如上述第1發明之積層陶瓷電容器燒成用工具材料之再生方法,上述積層陶瓷電容器燒成用工具材料之再生方法係於數次使用上述燒成用工具材料後,進行如下步驟:藉由珠粒噴擊或者平面研磨,而去除形成於上述SiC基材之表面之上述SiO2 層及上述被覆層之步驟;於氧化環境中以1350℃以上之溫 度進行2小時以上之加熱處理,藉此於上述SiC基材之表面上重新形成SiO2 層之步驟;以及於重新形成之上述SiO2 層之表面上,再形成厚度為30 μm以上、500 μm以下之以Al2 O3 、ZrO2 、Al2 O3 -SiO2 、及ZrSiO4 中之至少一種或複數種為主成分之被覆層的步驟。According to an eighth aspect of the present invention, there is provided a method of regenerating a tool material for firing a multilayer ceramic capacitor according to the first aspect of the invention, wherein the laminated ceramic capacitor The method of regenerating the tool material for firing is performed by using the material for the above-mentioned baking tool several times, and performing the following steps: removing the SiO 2 layer formed on the surface of the SiC substrate by bead blasting or planar polishing And the step of coating the layer; performing a heat treatment at a temperature of 1350 ° C or higher for 2 hours or more in an oxidizing atmosphere, thereby re-forming the SiO 2 layer on the surface of the SiC substrate; and reforming the SiO On the surface of the two layers, a coating having a thickness of 30 μm or more and 500 μm or less and having at least one or a plurality of Al 2 O 3 , ZrO 2 , Al 2 O 3 —SiO 2 , and ZrSiO 4 as a main component is further formed. The steps of the layer.

根據本發明之第9發明,提供一種如第7發明至第12發明之積層陶瓷電容器燒成用工具材料之再生方法,其中上述被覆層之重新形成步驟中,係使用電漿熔射、氣膠沈積、氣相沈積或CVD(Chemical Vapor Deposition,化學氣相沈積)中之任一者或複數者之組合。According to a ninth aspect of the present invention, there is provided a method for regenerating a tool material for laminating a ceramic capacitor according to the seventh to twelfth aspects of the present invention, wherein in the step of reforming the coating layer, a plasma spray or a gas gel is used. Any one or a combination of deposition, vapor deposition or CVD (Chemical Vapor Deposition).

根據本發明之第10發明,提供一種如第7發明至第12發明之積層陶瓷電容器燒成用工具材料之再生方法,其中上述被覆層之重新形成步驟中,係塗佈漿料後加熱至1400℃以上而進行燒接。According to a tenth aspect of the present invention, in the method for regenerating a tool material for laminating a ceramic capacitor according to the seventh to twelfth aspects of the present invention, in the step of reforming the coating layer, the slurry is applied and then heated to 1400. Burning is carried out above °C.

如上所述,若使用本發明之MLCC燒成用工具材料,則可提高燒成時之節能化以及生產效率,並且可於亦不產生MLCC之變色等燒結異常之情況下重複使用,故可降低成本。As described above, when the tool material for MLCC baking of the present invention is used, energy saving and production efficiency at the time of firing can be improved, and the sintering abnormality such as discoloration of MLCC can be prevented from being used, so that it can be reduced. cost.

因此,上述MLCC燒成用工具材料可有助於有效且廉價地製造MLCC。Therefore, the above MLCC firing tool material can contribute to efficient and inexpensive manufacture of MLCC.

又,根據本發明之製造方法,可較佳地製造上述MLCC燒成用工具材料。Further, according to the production method of the present invention, the MLCC baking tool material can be preferably produced.

根據本發明之工具材料之再生方法,可提供一種適於使 用多孔質SiC質基材之工具材料之再生、且廉價之工具材料之再生方法。According to the method of regenerating the tool material of the present invention, it is possible to provide a A method of regenerating a tool material using a porous SiC substrate and using a tool material which is inexpensive.

以下,對本發明進行更詳細的說明。Hereinafter, the present invention will be described in more detail.

本發明之MLCC燒成用工具材料中,於SiC基材表面形成有SiO2 層,進而,於至少載置作為被燒成物之積層陶瓷電容器之部分之SiO2 層表面上,形成有包含ZrO2 或Al2 O3 中之至少任一者之被覆層。The present invention MLCC firing tool material, formed on the surface of the SiC base material with a SiO 2 layer, and further, at least on the surface of the SiO as the mounting portion of the ceramic capacitor to be fired laminate of two layers, there is formed comprising ZrO 2 or a coating layer of at least one of Al 2 O 3 .

亦即,本發明係以SiC作為基材之燒成用工具材料,其構成如下:預先於SiC基材表面上形成SiO2 層,並且於該SiO2 層之上,形成由與MLCC之主成分即BaTiO3 之抗反應性優良之材質即ZrO2 或Al2 O3 而形成之表面層。That is, the present invention is a tool material for firing using SiC as a substrate, and is configured as follows: an SiO 2 layer is formed on the surface of the SiC substrate in advance, and a main component of the MLCC is formed on the SiO 2 layer. That is, a surface layer formed of ZrO 2 or Al 2 O 3 which is a material having excellent resistance to reactivity of BaTiO 3 .

根據本發明之燒成用工具材料,藉由形成於SiC基材表面上之SiO2 層,可抑制基材之SiC之氧化,使伴隨著氧化反應而產生之氧氣濃度之變動變小,並且可防止作為被燒成物之MLCC之變色等燒結異常。According to the blasting tool material of the present invention, the SiO 2 layer formed on the surface of the SiC substrate can suppress the oxidation of SiC of the substrate, and the fluctuation of the oxygen concentration accompanying the oxidation reaction can be reduced. Sintering abnormalities such as discoloration of MLCC as a burned material are prevented.

又,如上所述,藉由抑制基材SiC之氧化,可防止SiC基材與被覆層之界面上之物理特性發生變化,亦可獲得抑制被覆層產生龜裂或剝離之效果。Further, as described above, by suppressing oxidation of the substrate SiC, physical properties at the interface between the SiC substrate and the coating layer can be prevented from being changed, and an effect of suppressing cracking or peeling of the coating layer can be obtained.

發揮如上所述作用之SiO2 層,較好的是藉由SiC基材表面之氧化而形成者。The SiO 2 layer which functions as described above is preferably formed by oxidation of the surface of the SiC substrate.

藉由氧化處理,可容易且牢固地於基材整個面上形成厚度均勻之SiO2 層。By the oxidation treatment, a SiO 2 layer having a uniform thickness can be easily and firmly formed on the entire surface of the substrate.

相對於SiC基材中之SiC與該SiO2 層中之SiO2 之總量,上 述SiO2 層中之SiO2 含量較好的是1~4重量%。SiC substrate with respect to the total amount of SiC and SiO 2 of the layer 2 SiO, SiO 2 layer is preferably in the above-described SiO 2 content of 1 to 4 wt%.

若上述SiO2 未達1重量%,則有時於SiC基材之SiC結晶表面上無法充分形成SiO2 層。When the SiO 2 is less than 1% by weight, the SiO 2 layer may not be sufficiently formed on the SiC crystal surface of the SiC substrate.

另一方面,若上述SiO2 量超過4重量%,則耐熱強度降低,且SiO2 層變得過於厚,由此導致SiO2 層與被覆層之熱膨脹係數之差變得顯著,且被覆層之密著性亦降低,故而不佳。On the other hand, when the amount of the SiO 2 exceeds 4% by weight, the heat resistance is lowered, and the SiO 2 layer becomes too thick, whereby the difference in thermal expansion coefficient between the SiO 2 layer and the coating layer becomes remarkable, and the coating layer is The adhesion is also reduced, so it is not good.

又,較好的是,上述燒成用工具材料之視孔隙度為15%以上,視比重為3.05~3.20,且SiC含量為90重量%以上。Moreover, it is preferable that the baking tool material has a apparent porosity of 15% or more, an apparent specific gravity of 3.05 to 3.20, and an SiC content of 90% by weight or more.

若視孔隙度、視比重以及SiC含量處於上述範圍內,則可構成為一面保持被覆層之密著性,一面可實現輕量化、且具有充分之耐熱強度之工具材料。藉此,燒成時對該工具材料之處理亦變得容易,從而可提高MLCC之生產效率。When the porosity, the specific gravity, and the SiC content are in the above range, it is possible to realize a tool material which is lightweight and has sufficient heat resistance while maintaining the adhesion of the coating layer. Thereby, the handling of the tool material at the time of firing is also facilitated, and the production efficiency of the MLCC can be improved.

又,上述燒成用工具材料之視孔隙度較好的是60%以下。其原因在於,若視孔隙度大於60%,則表面積增大,氧化之影響增大,其結果為,應用本發明作為壁薄之燒成用工具時,強度可能不足。Moreover, the apparent porosity of the above-mentioned baking tool material is preferably 60% or less. The reason for this is that when the porosity is more than 60%, the surface area is increased and the influence of oxidation is increased. As a result, when the present invention is applied as a tool for baking a thin wall, the strength may be insufficient.

進而,上述燒成用工具材料亦可於上述SiO2 層與被覆層之間,形成包含Al2 O3 或Al2 O3 -SiC中之至少任一者之中間層,並且於該中間層上,形成包含ZrO2 或Al2 O3 中之至少任一者之上述被覆層而作為熔射膜。Further, the baking tool material may form an intermediate layer containing at least one of Al 2 O 3 or Al 2 O 3 -SiC between the SiO 2 layer and the coating layer, and on the intermediate layer The coating layer containing at least one of ZrO 2 or Al 2 O 3 is formed as a molten film.

上述中間層可發揮減小具有SiO2 層之SiC基材與被覆層之熱膨脹差之作用,且可提高被覆層之抗剝離效果,又, 於燒成時可更進一步抑制MLCC與工具材料之接觸部分之反應。The intermediate layer functions to reduce the difference in thermal expansion between the SiC substrate having the SiO 2 layer and the coating layer, and can improve the peeling resistance of the coating layer, and further suppress the contact of the MLCC with the tool material during firing. Partial reaction.

藉此,亦可提高該工具材料之可重複使用之次數。Thereby, the number of times the tool material can be reused can also be increased.

如上所述之MLCC燒成用工具材料可藉由本發明之製造方法而較佳獲得。以下,對製造步驟之概要進行說明。The tool material for MLCC firing as described above can be preferably obtained by the production method of the present invention. The outline of the manufacturing steps will be described below.

首先,於SiC粉末原料中添加燒結後之殘碳率未達5.0重量%之量之有機黏合劑並加以混合,以獲得混合物。First, an organic binder having a residual carbon ratio of less than 5.0% by weight after sintering is added to the SiC powder raw material and mixed to obtain a mixture.

上述SiC粉末原料可使用通常製造此類SiC系陶瓷時所使用之SiC粉末。例如,可使用純度約為90%以上、平均粒徑為0.1~200 μm左右之市售品,但就防止與被燒成物發生反應之觀點而言,較好的是純度為95%以上之高純度SiC粉末,更好的是純度為99%以上。又,粉末粒徑可為非均質,亦可為微粒品(平均粒徑為0.5~10 μm)與粗粒品(平均粒徑為20~200 μm)之混合粉末。As the SiC powder raw material, SiC powder which is generally used in the production of such SiC-based ceramics can be used. For example, a commercially available product having a purity of about 90% or more and an average particle diameter of about 0.1 to 200 μm can be used. However, from the viewpoint of preventing reaction with the burned material, the purity is preferably 95% or more. The high purity SiC powder preferably has a purity of 99% or more. Further, the powder particle size may be heterogeneous, and may be a mixed powder of a fine particle product (average particle diameter of 0.5 to 10 μm) and a coarse particle product (average particle diameter of 20 to 200 μm).

又,作為上述有機黏合劑,可使用通常所使用者,具體而言可列舉:酚甲醛樹脂、酚糠醛樹脂、聚苯并咪唑樹脂、聚苯等芳香族系樹脂黏合劑;聚乙烯醇、聚氯乙烯、聚偏二氯乙烯、聚丙烯酸系樹脂等脂肪族系樹脂黏合劑;以及矽氧樹脂、甲基纖維素、羧基甲基纖維素、焦油瀝青等各種有機黏合劑。In addition, as the organic binder, a general user can be used, and specific examples thereof include an aromatic resin binder such as a phenol formaldehyde resin, a phenol formaldehyde resin, a polybenzimidazole resin, and a polyphenylene; An aliphatic resin binder such as vinyl chloride, polyvinylidene chloride or a polyacrylic resin; and various organic binders such as a silicone resin, methyl cellulose, carboxymethyl cellulose, and tar pitch.

上述有機黏合劑之添加量係使燒結後之殘碳率未達5.0重量%之程度。The amount of the organic binder added is such that the residual carbon ratio after sintering is less than 5.0% by weight.

若殘碳率超過5.0重量%,則氧化量增多,從而導致氧化處理時間變長。When the residual carbon ratio exceeds 5.0% by weight, the amount of oxidation increases, and the oxidation treatment time becomes long.

其次,於藉由上述方式獲得之SiC粉末原料與有機黏合劑之混合物中,添加水後加以捏合而成形,以獲得多孔質成形體。Next, water is added to the mixture of the SiC powder raw material and the organic binder obtained in the above manner, and then kneaded to form a porous molded body.

作為成形方法,可使用壓製(press)、橡膠壓製(rubber press)、擠出及鑄漿成型(slip cast)等通常之方法,且藉由該等方法而成形為所需之形狀。As the molding method, a usual method such as press, rubber press, extrusion, and slip casting can be used, and formed into a desired shape by these methods.

進而,以1500~2400℃之溫度燒結藉由上述方式而獲得之多孔質成形體,其後於氧氣環境下加熱,藉此實施氧化處理,以於該燒結體表面上形成SiO2 層。Further, the porous formed body obtained by the above-described method is sintered at a temperature of 1,500 to 2,400 ° C, and then heated in an oxygen atmosphere to carry out an oxidation treatment to form an SiO 2 layer on the surface of the sintered body.

於上述氧化處理中,爐內環境中之氧氣濃度較好的是2%以上。In the above oxidation treatment, the oxygen concentration in the furnace environment is preferably 2% or more.

若氧氣濃度未達2%,則於SiC基材表面形成充分之SiO2 層所需的時間將變長,故而不佳。If the oxygen concentration is less than 2%, the time required to form a sufficient SiO 2 layer on the surface of the SiC substrate becomes long, which is not preferable.

又,氧化處理時之燒成溫度較好的是1350~1650℃。Further, the firing temperature at the time of the oxidation treatment is preferably from 1,350 to 1,650 °C.

若上述燒成溫度未達1350℃,則形成所需之SiO2 層時所需的時間將變長,故而不佳。If the above firing temperature is less than 1350 ° C, the time required to form the desired SiO 2 layer will become long, which is not preferable.

另一方面,若上述燒成溫度超過1650℃,則SiC之氧化反應將變激烈,使SiO2 層因軟化而產生發泡或龜裂,從而無法形成為穩定的膜。On the other hand, when the baking temperature exceeds 1650 ° C, the oxidation reaction of SiC becomes intense, and the SiO 2 layer is foamed or cracked by softening, so that a stable film cannot be formed.

繼而,於上述SiO2 層表面,形成包含ZrO2 或Al2 O3 中之至少任一者之被覆層。Then, a coating layer containing at least one of ZrO 2 or Al 2 O 3 is formed on the surface of the SiO 2 layer.

作為上述被覆層之形成方法,可使用熔射法、塗佈所需之陶瓷漿料(ceramic slurry)後於高溫下燒接之方法及CVD(Chemical Vapor Deposition)法等,然而於本發明中,可實 現利用定準效應(anchor effect)之物理密著,使所形成之被覆層難以與基材剝離,據此較好的是藉由電漿熔射等熔射法來形成。As a method of forming the coating layer, a method of spraying, a ceramic slurry required for coating, a method of baking at a high temperature, a CVD (Chemical Vapor Deposition) method, or the like can be used. However, in the present invention, Real The physical adhesion of the anchor effect is now used to make the formed coating layer difficult to peel off from the substrate, and it is preferable to form it by a spray method such as plasma spraying.

熔射法亦具有可獲得緻密且比表面積小、與被燒成物之抗反應性亦優良之被覆層的優點。The spray method also has the advantage of being able to obtain a coating layer which is dense, has a small specific surface area, and is excellent in reactivity with a burned material.

尤其好的是藉由水電漿熔射法而形成之被覆層,其原因在於,表面粗糙度大,與被燒成物之接觸面積小,且難以與被燒成物發生反應。Particularly, a coating layer formed by a water plasma spray method is preferred because the surface roughness is large, the contact area with the object to be fired is small, and it is difficult to react with the object to be fired.

根據需要,上述被覆層可形成於SiO2 層之整個表面,或者亦可僅形成於包含載置作為被燒成物之MLCC之部分之基材的一部分上。The coating layer may be formed on the entire surface of the SiO 2 layer as needed, or may be formed only on a part of the substrate including the portion of the MLCC on which the object to be fired is placed.

上述被覆層之材質由於要求具有與作為被燒成物之MLCC之抗反應性、不產生剝離或脫落等之耐久性等特性,故而較好的是ZrO2 或者Al2 O3The material of the coating layer is preferably ZrO 2 or Al 2 O 3 because it is required to have reactivity with MLCC as a burned material, such as durability against peeling or peeling.

再者,於藉由ZrO2 之熔射膜而形成上述被覆層之情形時,較好的是,使未穩定化氧化鋯、氧化鈣(CaO)或氧化釔(Y2 O3 )與作為穩定化劑之穩定化氧化鋯或部分穩定化氧化鋯混合在一起。就防止被覆層剝離之觀點而言,混合比率較好的是穩定化或部分穩定化氧化鋯為30~60重量%,未穩定化氧化鋯為70~40重量%。Further, in the case where the coating layer is formed by a molten film of ZrO 2 , it is preferred to stabilize the unstabilized zirconia, calcium oxide (CaO) or yttrium oxide (Y 2 O 3 ). The stabilized zirconia or partially stabilized zirconia of the agent is mixed together. From the viewpoint of preventing the peeling of the coating layer, the mixing ratio is preferably 30 to 60% by weight of the stabilized or partially stabilized zirconia, and 70 to 40% by weight of the unstabilized zirconia.

又,亦可於SiO2 層表面形成包含Al2 O3 或Al2 O3 -SiO2 中之至少任一者之中間層後,於該中間層上形成上述被覆層。Further, after forming an intermediate layer containing at least one of Al 2 O 3 or Al 2 O 3 -SiO 2 on the surface of the SiO 2 layer, the coating layer may be formed on the intermediate layer.

上述中間層具有介於包含SiO2 層之基材與被覆層之間的熱膨脹係數,可減小兩者之熱膨脹差,因此可有效防止被 覆層之剝離。The intermediate layer has a coefficient of thermal expansion between the substrate including the SiO 2 layer and the coating layer, and the difference in thermal expansion between the two layers can be reduced, so that the peeling of the coating layer can be effectively prevented.

作為上述中間層之形成方法,實用的有將Al2 O3 -SiC等特定材質形成為漿料後藉由熔射等進行塗佈並於高溫下燒接之方法、以及藉由電漿熔射等熔射法而形成被膜之方法等。As a method of forming the intermediate layer, a method in which a specific material such as Al 2 O 3 -SiC is formed into a slurry, coated by spraying or the like, and fired at a high temperature, and a plasma spray is used. A method of forming a film by a spray method or the like.

該等方法中,就提高被膜之密著性、防止剝離之觀點而言,較好的是藉由熔射法而形成。尤其係利用水電漿熔射法而形成之被膜,可藉由彈性模數較低、伴隨膨脹收縮而產生之熱應力較小、應力得以分散及緩和自身膨脹等效果,而抑制剝離。Among these methods, from the viewpoint of improving the adhesion of the film and preventing peeling, it is preferably formed by a spray method. In particular, the film formed by the water plasma spray method can suppress peeling by the effects of low modulus of elasticity, small thermal stress accompanying expansion and contraction, dispersion of stress, and relaxation of self-expansion.

[實施例][Examples]

以下,根據實施例,對本發明進行更具體之說明,但本發明並非由下述實施例限制者。Hereinafter, the present invention will be more specifically described based on the examples, but the present invention is not limited by the following examples.

[實施例1][Example 1]

首先,於SiC粉末原料中,添加燒結後之殘碳率未達5.0重量%之量之甲基纖維素系黏合劑並加以混合,以獲得混合物。First, a methylcellulose-based binder having a residual carbon ratio after sintering of less than 5.0% by weight is added to the SiC powder raw material and mixed to obtain a mixture.

於上述混合物中添加水後加以捏合,並壓製成形,藉此獲得多孔質成形體。Water was added to the above mixture, followed by kneading, and press molding, whereby a porous formed body was obtained.

以2300℃之溫度燒結上述多孔質成形體,其後,於氧氣濃度為4%之氧氣環境下,以1350℃之溫度經3小時燒成而實施氧化處理,於該燒結體表面形成SiO2 層,以製作具有150 mm×150 mm×厚度3 mm之SiO2 層(二氧化矽層)之SiC基材。The porous formed body was sintered at a temperature of 2300 ° C, and then oxidized at a temperature of 1350 ° C for 3 hours in an oxygen atmosphere having an oxygen concentration of 4% to form an SiO 2 layer on the surface of the sintered body. To produce a SiC substrate having a SiO 2 layer (ceria layer) of 150 mm × 150 mm × 3 mm in thickness.

依照JIS(Japanese Industrial Standard,日本工業標準)R2205-1992,對上述基材測定視孔隙度及視比重。此處,所謂視孔隙度、視比重,係指針對包含SiO2 層之SiC基材而算出之值。The apparent porosity and apparent specific gravity of the above substrate were measured in accordance with JIS (Japanese Industrial Standard) R2205-1992. Here, the apparent porosity and the apparent specific gravity are values calculated for the SiC substrate including the SiO 2 layer.

又,自上述基材切出10 mm×10 mm×厚度3 mm之試料片(約1 g),使該試料片浸漬於氟化氫水溶液(1:1)中,並根據60分鐘後之重量減量而求出SiO2 量。Further, a test piece (about 1 g) of 10 mm × 10 mm × 3 mm in thickness was cut out from the substrate, and the sample piece was immersed in an aqueous hydrogen fluoride solution (1:1), and the weight was reduced according to 60 minutes later. The amount of SiO 2 was determined.

又,於150 mm×150 mm×厚度3 mm之上述基材之表面,藉由水電漿熔射,而形成厚度為150 μm之Al2 O3 被膜(中間層),進而於該被膜上,形成厚度為150 μm之ZrO2 被膜(被覆層),作為MLCC燒成用定位器。Further, on the surface of the substrate of 150 mm × 150 mm × 3 mm in thickness, an Al 2 O 3 film (intermediate layer) having a thickness of 150 μm is formed by spraying with a water plasma, and further formed on the film. A ZrO 2 film (coating layer) having a thickness of 150 μm is used as a locator for MLCC firing.

使用該定位器,進行MLCC燒成測試,並評價產生燒成異常(變色)等MLCC之燒成狀態。Using this locator, the MLCC firing test was performed, and the firing state of MLCC such as firing abnormality (discoloration) was evaluated.

又,為檢查MLCC燒成測試中之定位器之氧化狀態,將具有10 mm×10 mm×厚度3 mm之SiO2 層之SiC基材測試片,與上述定位器同時放入燒成爐中,並以與上述相同之方式求出燒成1次後及燒成10次後之SiO2 量。Further, in order to inspect the oxidation state of the positioner in the MLCC firing test, a SiC substrate test piece having a SiO 2 layer of 10 mm × 10 mm × 3 mm thickness was placed in the firing furnace simultaneously with the above positioner. The amount of SiO 2 after firing once and after firing 10 times was determined in the same manner as above.

[比較例1][Comparative Example 1]

使用未氧化處理之SiC基材,除此以外以與實施例1相同之方式,進行SiO2 量之測定以及MLCC燒成測試。The measurement of the amount of SiO 2 and the MLCC firing test were carried out in the same manner as in Example 1 except that the SiC substrate which was not oxidized was used.

[實施例2~4、比較例2、比較例3][Examples 2 to 4, Comparative Example 2, Comparative Example 3]

將氧化處理時之燒成溫度設為表1之實施例2~4、比較例2、比較例3中分別表示之溫度,除此以外以與實施例1相同之方式,進行SiO2 量之測定以及MLCC燒成測試。The amount of SiO 2 was measured in the same manner as in Example 1 except that the firing temperature in the oxidation treatment was changed to the temperatures shown in Examples 2 to 4, Comparative Example 2, and Comparative Example 3 of Table 1. And MLCC firing test.

表1中一併表示上述實施例及比較例之測定以及評價結果。The measurement and evaluation results of the above examples and comparative examples are shown together in Table 1.

再者,於表1之MLCC燒成狀態之評價中,◎表示良好,○表示大體良好,×表示產生燒成異常。Further, in the evaluation of the MLCC calcined state in Table 1, ◎ indicates good, ○ indicates that it was substantially good, and × indicates that firing abnormality occurred.

根據表1所示之結果可知,於藉由氧化處理而充分形成SiO2 層之情形時(實施例1~4),尤其於SiO2 量更多之實施例3、實施例4中,MLCC燒成時SiC之進一步氧化反應之進展得到抑制,MLCC燒成狀態亦良好。According to the results shown in Table 1, it is understood that in the case where the SiO 2 layer is sufficiently formed by the oxidation treatment (Examples 1 to 4), in particular, in Example 3 and Example 4 in which the amount of SiO 2 is larger, MLCC is burned. The progress of the further oxidation reaction of the formed SiC was suppressed, and the MLCC burned state was also good.

另一方面,於藉由氧化處理而之SiO2 層之形成並不充分的情形時(比較例1、比較例2),MLCC燒成時之SiO2 量之增量較多,MLCC產生燒成異常。其原因在於,當SiO2 量之增量較多時,因基材SiC之氧化反應而導致燒成爐內之氧氣濃度的變化量增大。On the other hand, when the formation of the SiO 2 layer by the oxidation treatment is not sufficient (Comparative Example 1 and Comparative Example 2), the amount of SiO 2 in the MLCC firing is large, and the MLCC is fired. abnormal. The reason for this is that when the amount of SiO 2 is increased in a large amount, the amount of change in the oxygen concentration in the firing furnace increases due to the oxidation reaction of the substrate SiC.

再者,於氧化處理溫度為1700℃之情形時(比較例3),氧化反應變得激烈,並伴隨發泡,難以形成所需之SiO2 層。由於局部形成SiO2 層,故而表1中以括號形式來表示對該部分所測定之視孔隙度、視比重以及SiO2 量。Further, when the oxidation treatment temperature was 1700 ° C (Comparative Example 3), the oxidation reaction became intense, and foaming was caused, and it was difficult to form a desired SiO 2 layer. Since the SiO 2 layer was partially formed, the apparent porosity, the apparent specific gravity, and the amount of SiO 2 measured in this portion are shown in parentheses in Table 1.

其次,對上述本發明之工具材料之再生方法進行說明。Next, a method of reproducing the above-described tool material of the present invention will be described.

本發明之一實施形態之再生方法之對象係如下之工具材料,該工具材料包括作為用以載置陶瓷零件即被燒成物之基材之視孔隙度為15%以上、彎曲強度為35 MPa以上的多孔質SiC質基材、以及該多孔質SiC質基材狀之SiO2 層,且於該SiO2 層之至少載置被燒成物之部分的表面上,形成有以Al2 O3 、ZrO2 、Al2 O3 -SiO2 、及ZrSiO4 中之至少一種或複數種為主成分的陶瓷皮膜。The object of the present invention is a tool material which comprises, as a substrate for mounting a ceramic component, that is, a material to be fired, having an apparent porosity of 15% or more and a bending strength of 35 MPa. more porous SiC base material, and the shape of the porous SiC substrate mass SiO 2 layer, and in that the SiO 2 layer at least on the firing of the upper surface portion thereof, formed with a Al 2 O 3 At least one of ZrO 2 , Al 2 O 3 —SiO 2 , and ZrSiO 4 or a plurality of ceramic films having a plurality of components as a main component.

本發明之一實施形態之再生方法,係於數次使用工具材料後,去除形成於SiO2 層之表面之陶瓷皮膜,並重新形成厚度為30~500 μm之以Al2 O3 、ZrO2 、Al2 O3 -SiO2 、及ZrSiO4 中之至少一種或複數種為主成分的陶瓷皮膜,而實現再生。In the regeneration method according to an embodiment of the present invention, after the tool material is used several times, the ceramic film formed on the surface of the SiO 2 layer is removed, and Al 2 O 3 and ZrO 2 having a thickness of 30 to 500 μm are newly formed. Regeneration is achieved by at least one of Al 2 O 3 -SiO 2 and ZrSiO 4 or a plurality of ceramic coatings containing a plurality of components.

上述積層陶瓷電容器工具材料中,若於SiC之表面直接載置被燒成物,則多會發生反應,因此必須形成Al2 O3 、ZrO2 等之抗反應性之表面被覆。為形成表面皮膜,必須使基材表面(1)粗糙化以提高與基材之密著性,且必須使用(2)多孔質(porous)基材。In the above-mentioned laminated ceramic capacitor tool material, when the burned material is directly placed on the surface of SiC, a reaction often occurs. Therefore, it is necessary to form a surface coating resistant to reactivity such as Al 2 O 3 or ZrO 2 . In order to form a surface film, it is necessary to roughen the surface (1) of the substrate to improve the adhesion to the substrate, and it is necessary to use (2) a porous substrate.

若於高溫下裝載被燒成物並使用上述積層陶瓷電容器工具材料,則由於氧化或與滲透至皮膜中之被燒成物成分發生反應,而導致基材劣化。最早受到外來成分之影響之基材表面部之劣化程度尤其大。因此,為再利用基材而去除皮膜時,基材表面之凸部亦會與皮膜一併消失,而無法獲得用以形成皮膜之充分之表面粗糙度的情形較多。When the fired material is loaded at a high temperature and the above-mentioned laminated ceramic capacitor tool material is used, the substrate is deteriorated due to oxidation or reaction with the burned material component that has penetrated into the film. The degree of deterioration of the surface portion of the substrate which was first affected by foreign components was particularly large. Therefore, when the film is removed by reusing the substrate, the convex portion on the surface of the substrate also disappears together with the film, and the surface roughness for forming the film is not sufficiently obtained.

因此,對於緻密的SiC質基材而言,必須再次進行如化學蝕刻之粗糙化處理。Therefore, for a dense SiC substrate, it is necessary to perform a roughening treatment such as chemical etching again.

與此相對,對於作為本再生方法之對象之工具材料之多孔質基材,即便基材表面部之一部分因脆化而缺損,由於基材原本係具有多個空孔之組織,故而可始終獲得與皮膜之密著性良好的表面。因此,本再生方法無須再次進行粗糙化處理,與使用需要化學蝕刻等粗糙化處理之緻密質SiC質基材時之再生方法相比,可低廉地再生工具材料。On the other hand, in the porous base material which is the tool material of the present regeneration method, even if a part of the surface portion of the base material is broken due to embrittlement, since the base material originally has a structure of a plurality of pores, it can always be obtained. A surface with good adhesion to the film. Therefore, the present regeneration method does not require re-roughening treatment, and the tool material can be regenerated inexpensively as compared with the regeneration method in the case of using a dense SiC substrate which requires roughening treatment such as chemical etching.

當用以裝載反應性較高之被燒成物之基材中,表面因發生反應而脆化時,若為多孔質基材,則亦可藉由研磨等機械加工去除脆化部分後進行再利用。When the surface of the substrate for loading a highly burned material is embrittled by a reaction, if it is a porous substrate, the embrittlement portion may be removed by mechanical processing such as polishing. use.

當考慮到與皮膜之密著性時,基材之視孔隙度必須為15%以上。圖1及圖2表示於視孔隙度為27%之多孔質SiC質基材上形成皮膜之剖面組織。可知,其具有皮膜陷入基材、二氧化矽層之氣孔中之錨定(anchor)構造。When considering the adhesion to the film, the apparent porosity of the substrate must be 15% or more. Fig. 1 and Fig. 2 show a cross-sectional structure in which a film is formed on a porous SiC substrate having a porosity of 27%. It is understood that it has an anchor structure in which the film is immersed in the pores of the substrate or the ruthenium dioxide layer.

若基材之視孔隙度未達15%,則存在皮膜與基材、二氧化矽層之間無法獲得充分之錨定效應,於使用初期即產生皮膜剝離之情形。If the apparent porosity of the substrate is less than 15%, a sufficient anchoring effect cannot be obtained between the film, the substrate, and the ceria layer, and peeling of the film occurs at the initial stage of use.

視孔隙度越大,皮膜之密著性越高,但基材之強度越低。The greater the apparent porosity, the higher the adhesion of the film, but the lower the strength of the substrate.

至於強度,彎曲強度必須為35 MPa以上。若彎曲強度未達35 MPa,則根據工具材料之形狀,例如若為厚度1~3 mm之薄壁定位器等之情形時,有時會產生破裂。As for the strength, the bending strength must be 35 MPa or more. If the bending strength is less than 35 MPa, depending on the shape of the tool material, for example, in the case of a thin-walled positioner having a thickness of 1 to 3 mm, cracking may occur.

作為使基材多孔質化之方法,可列舉藉由原料之粒度構 成而調整之方法、添加燒成時消失之空間形成材、於漿料中形成有氣泡之狀態下成形等方法。燒成可使用通常之燒結、反應燒結等任一方法,但較好的是藉由再結晶而進行之燒結,其不會帶來因燒結而產生之收縮,可大致維持燒結前之孔隙度。為促進再結晶,通常必須以1500~2500℃左右之溫度進行燒結。As a method of making the substrate porous, the particle size structure of the raw material can be cited. A method of adjusting the method, adding a space forming material that disappears during firing, and forming a state in which bubbles are formed in the slurry. For the firing, any of conventional sintering and reaction sintering may be used. However, it is preferred to carry out sintering by recrystallization, which does not cause shrinkage due to sintering, and the porosity before sintering can be substantially maintained. In order to promote recrystallization, it is usually necessary to carry out sintering at a temperature of about 1,500 to 2,500 °C.

若於高溫(1300℃以上左右)下在含氧環境下使用工具材料,則存在使用初期會產生伴隨SiC氧化之氣體交換,從而對被燒成物造成不良影響之情形。因此,於基材表面附加皮膜之前,預先藉由氧化而形成二氧化矽層後,再形成皮膜。藉由二氧化矽層之效果,可減輕伴隨著初期之氧化之反應的影響。When a tool material is used in an oxygen-containing atmosphere at a high temperature (about 1300 ° C or higher), gas exchange with SiC oxidation may occur at the initial stage of use, which may adversely affect the burned material. Therefore, before the film is added to the surface of the substrate, the ruthenium dioxide layer is formed by oxidation in advance, and then a film is formed. By the effect of the ruthenium dioxide layer, the influence of the reaction accompanying the initial oxidation can be alleviated.

作為最表面之皮膜,較好的是,難以與鈦酸鋇、鐵氧體等陶瓷電子零件材料發生反應之ZrO2 或Al2 O3 。特別好的是難以與大多材質發生反應之ZrO2 。與基材SiC相比,ZrO2 之熱膨脹較大,因此高溫下使用時,於ZrO2 與SiC質基材之間會產生因熱膨脹差而帶來之應力。As the film of the outermost surface, ZrO 2 or Al 2 O 3 which is difficult to react with a ceramic electronic component material such as barium titanate or ferrite is preferable. Particularly preferred is ZrO 2 which is difficult to react with most materials. ZrO 2 has a larger thermal expansion than the substrate SiC. Therefore, when used at a high temperature, a stress due to a difference in thermal expansion occurs between ZrO 2 and the SiC substrate.

為減小該應力,若於ZrO2 皮膜與SiC質基材之間形成具有介於兩者之間之熱膨脹係數的Al2 O3 、Al2 O3 -SiO2 、ZrSiO4 皮膜,則難以產生剝離。In order to reduce the stress, if an Al 2 O 3 , Al 2 O 3 —SiO 2 , or ZrSiO 4 film having a thermal expansion coefficient therebetween is formed between the ZrO 2 film and the SiC substrate, it is difficult to produce Stripped.

再者,本發明中,於SiC基材與ZrO2 皮膜之間,設置有Al2 O3 、Al2 O3 -SiO2 、ZrSiO4 這樣的中間層(SiO2 層之膜厚較小,因此圖2之放大率下無法顯示出SiO2 層)。Further, in the present invention, an intermediate layer such as Al 2 O 3 , Al 2 O 3 -SiO 2 or ZrSiO 4 is provided between the SiC substrate and the ZrO 2 film (the thickness of the SiO 2 layer is small, so The SiO 2 layer cannot be shown at the magnification of Fig. 2).

然而,即便夾有SiO2 層,Al2 O3 、Al2 O3 -SiO2 、ZrSiO4 這 樣的中間層之熱膨脹緩和效果亦不降低,故SiO2 層對熱膨脹緩和效果並無不良影響。However, even if the SiO 2 layer is interposed, the thermal expansion relaxation effect of the intermediate layer such as Al 2 O 3 , Al 2 O 3 —SiO 2 , and ZrSiO 4 does not decrease, so that the SiO 2 layer does not adversely affect the thermal expansion relaxation effect.

作為皮膜之厚度,較好的是30~500 μm。皮膜之厚度取決於膜之孔隙度、顆粒之大小等,但若厚度小於30 μm,則即便係緻密之膜,亦會局部地導致氣孔或裂縫連續,基材表面之SiO2 或被燒成物成分於短時間內通過皮膜,從而引起被燒成物與SiO2 、或者被燒成物與SiC之反應,故而不佳。The thickness of the film is preferably from 30 to 500 μm. The thickness of the film depends on the porosity of the film, the size of the particles, etc., but if the thickness is less than 30 μm, even a dense film may locally cause pores or cracks to be continuous, and SiO 2 or burned material on the surface of the substrate. Since the component passes through the film in a short time, and the reaction between the burned material and SiO 2 or the burned material and SiC is caused, it is not preferable.

若皮膜之膜厚變大,則SiO2 或被燒成物成分橫穿皮膜所需之時間將變長,但若膜厚大於1000 μm,則因SiC質基材與皮膜之熱膨脹差而產生之應力之比例增大,易產生剝離。When the film thickness of the film is increased, the time required for the SiO 2 or the component to be fired to cross the film becomes longer, but if the film thickness is more than 1000 μm, the thermal expansion of the SiC substrate and the film is poor. The proportion of stress increases and it is easy to cause peeling.

為形成皮膜,存有電漿熔射、漿料塗佈燒接、氣膠沈積(aero-sol deposition)、氣相沈積(gas deposition)及CVD(Chemical Vapor Deposition)等方法。In order to form a film, there are methods such as plasma spraying, slurry coating and baking, aero-sol deposition, gas deposition, and CVD (Chemical Vapor Deposition).

尤其係熔融原料高速碰撞基材而瞬間固化之電漿熔射中,皮膜會陷入SiC基材之氣孔部,可形成具有有效防止剝離之錨定構造的皮膜。In particular, in the plasma spray in which the molten raw material collides with the substrate at a high speed and is instantaneously solidified, the film is caught in the pore portion of the SiC substrate, and a film having an anchoring structure effective for preventing peeling can be formed.

即便於裝載鈦酸鋇或鐵氧體等陶瓷電子零件並多次用於燒成,刀子皮膜產生剝離、或者皮膜表面之反應成分增加引起與被裝載物之反應,而無法使用容器的情形時,若SiC質基材自身並無破裂或翹曲,則去除舊皮膜與舊SiO2 層,並重新形成皮膜與SiO2 層,即可對基材進行再利用。That is, when a ceramic electronic component such as barium titanate or ferrite is easily used and fired a plurality of times, and the knife film is peeled off, or the reaction component on the surface of the film is increased to cause a reaction with the loaded object, and the container cannot be used, When the SiC substrate itself is not broken or warped, the old film and the old SiO 2 layer are removed, and the film and the SiO 2 layer are reformed, and the substrate can be reused.

皮膜與SiO2 層之去除,可使用珠粒噴擊(shot blast)、平 面研磨等加工方法而進行。因係多孔質基材,故而加工面可獲得具有適當之空孔、與皮膜之間產生定準效應且適於皮膜形成之面。The removal of the film and the SiO 2 layer can be carried out by a processing method such as shot blast or plane polishing. Since the porous substrate is a porous substrate, a surface having appropriate pores and a registration effect with the coating film and suitable for film formation can be obtained.

去除皮膜與二氧化矽層之後,以與第一次形成皮膜之方法相同之方法而形成皮膜。藉由重複以上操作,可進行多次再利用。After the film and the ceria layer are removed, the film is formed in the same manner as the method of forming the film for the first time. By repeating the above operations, multiple reuses can be performed.

再者,視孔隙度之測定方法及條件係依據JIS(日本工業標準)R 2205「耐火磚之視孔隙度之測定方法」。彎曲強度之測定方法及條件係依據JIS R 2213「耐火磚之彎曲強度之測定方法」。較好的是電漿熔射為水電漿熔射。In addition, the method and conditions for measuring the porosity are based on JIS (Japanese Industrial Standard) R 2205 "Method for Measuring the Porosity of Refractory Bricks". The method and conditions for measuring the bending strength are based on JIS R 2213 "Method for Measuring the Flexural Strength of Refractory Bricks". Preferably, the plasma spray is a water plasma spray.

根據本實施形態之工具材料之再生方法,可實現適於使用多孔質SiC質基材之工具材料之再生、且廉價之工具材料之再生方法。According to the method for regenerating the tool material of the present embodiment, it is possible to realize a method of regenerating a tool material suitable for regeneration using a tool material of a porous SiC substrate.

[實施例][Examples] (實施例5)(Example 5)

於視孔隙度27%之再結晶多孔質SiC質基材上形成二氧化矽層之後,藉由水電漿熔射法而形成150 μm之氧化鋁(Al2 O3 )皮膜,其後,於該皮膜上形成150 μm之ZrO2 皮膜。於該工具材料上裝載鈦酸鋇後於1350℃下加熱。60小時後降低溫度並觀察皮膜之狀態。重複進行該操作,直至皮膜剝離為止。大約180小時後局部產生剝離,因此使用平面研磨機去除舊皮膜,並以與最初形成皮膜之方法相同之方法而重新形成皮膜。After forming a hafnium oxide layer on a recrystallized porous SiC substrate having a porosity of 27%, a 150 μm alumina (Al 2 O 3 ) film is formed by a water plasma spray method, and thereafter, A 150 μm ZrO 2 film was formed on the film. The barium titanate was loaded on the tool material and heated at 1350 °C. After 60 hours, the temperature was lowered and the state of the film was observed. This operation is repeated until the film is peeled off. Peeling occurred locally after about 180 hours, so the old film was removed using a plane grinder and the film was reformed in the same manner as the method of initially forming the film.

再次進行同樣之加熱測試後,發現於240小時之時點發 生剝離,故可確認皮膜具有與初次之皮膜同等以上之耐久性。After performing the same heating test again, it was found to be issued at 240 hours. Since the peeling was performed, it was confirmed that the film had durability equal to or higher than that of the first film.

(比較例4)(Comparative Example 4)

對視孔隙度為0%之常壓燒結SiC質基材之表面進行化學蝕刻使其粗糙化後,以與實施例1相同之水電漿熔射法而形成150 μm之氧化鋁皮膜,其後於該皮膜上形成150 μm之ZrO2 皮膜。進行與實施例1相同之加熱測試,於120小時後產生剝離。基材上並無破裂、翹曲等損傷,因此嘗試加以再利用。After the surface of the normal-pressure sintered SiC substrate having a porosity of 0% was chemically etched and roughened, a 150 μm aluminum oxide film was formed by the same water plasma spray method as in Example 1, and thereafter A 150 μm ZrO 2 film was formed on the film. The same heating test as in Example 1 was carried out, and peeling occurred after 120 hours. There is no damage such as cracking or warping on the substrate, so try to reuse it.

使用平面研磨機去除舊皮膜、舊二氧化矽層,並以與最初形成皮膜之方法相同之方法嘗試形成新的皮膜,但因基材之表面粗糙度並不充分,故而無法形成皮膜。The old film and the old ceria layer were removed by a flat grinder, and a new film was attempted in the same manner as the method of initially forming the film. However, since the surface roughness of the substrate was not sufficient, the film could not be formed.

圖1係於本發明之工具材料之再生方法中所使用之多孔質SiC質基材上形成有皮膜之剖面組織圖。Fig. 1 is a cross-sectional structural view showing a film formed on a porous SiC substrate used in a method for regenerating a tool material of the present invention.

圖2係於本發明之工具材料之再生方法中所使用之多孔質SiC質基材上形成有皮膜之剖面組織圖。Fig. 2 is a cross-sectional structural view showing a film formed on a porous SiC substrate used in a method for regenerating a tool material of the present invention.

Claims (13)

一種積層陶瓷電容器燒成用工具材料,其特徵在於:具有SiC基材、以及藉由氧化處理而形成於上述SiC基材表面上之SiO2 層;上述積層陶瓷電容器燒成用工具材料之視孔隙度為15%以上,視比重為3.05~3.20,SiC含量為90重量%以上;且於至少載置有作為被燒成物之積層陶瓷電容器之部分之SiO2 層表面上,形成有包含ZrO2 或Al2 O3 中之至少任一者之被覆層。A tool material for firing a multilayer ceramic capacitor, comprising: a SiC substrate; and an SiO 2 layer formed on the surface of the SiC substrate by oxidation treatment; and a viewing aperture of the tool material for firing the multilayer ceramic capacitor The degree is 15% or more, the specific gravity is 3.05 to 3.20, and the SiC content is 90% by weight or more; and ZrO 2 is formed on the surface of the SiO 2 layer on which at least a portion of the multilayer ceramic capacitor as the fired material is placed. Or a coating layer of at least one of Al 2 O 3 . 一種積層陶瓷電容器燒成用工具材料,其特徵在於:具有SiC基材、以及藉由氧化處理而形成於上述SiC基材表面上之SiO2 層;上述積層陶瓷電容器燒成用工具材料之視孔隙度為15%以上,視比重為3.05~3.20,SiC含量為90重量%以上;且於至少載置有作為被燒成物之積層陶瓷電容器之部分之上述SiO2 層表面上,具有包含ZrO2 或Al2 O3 中之至少任一者且藉由熔射法而形成之被覆層;並且於上述SiO2 層與上述被覆層之間,形成有包含Al2 O3 或Al2 O3 -SiO2 中之至少任一者之中間層。A tool material for firing a multilayer ceramic capacitor, comprising: a SiC substrate; and an SiO 2 layer formed on the surface of the SiC substrate by oxidation treatment; and a viewing aperture of the tool material for firing the multilayer ceramic capacitor a degree of 15% or more, an apparent specific gravity of 3.05 to 3.20, a SiC content of 90% by weight or more, and a surface containing the ZrO 2 on the surface of the SiO 2 layer on which at least a portion of the multilayer ceramic capacitor as a fired material is placed. Or at least one of Al 2 O 3 and a coating layer formed by a sputtering method; and between the SiO 2 layer and the coating layer, Al 2 O 3 or Al 2 O 3 -SiO is formed 2 of at least either one of the intermediate layer. 一種積層陶瓷電容器燒成用工具材料,其特徵在於:具有SiC基材、以及藉由氧化處理而形成於上述SiC基材表面之SiO2 層; 上述積層陶瓷電容器燒成用工具材料之視孔隙度為15%以上,視比重為3.05~3.20,SiC含量為90重量%以上;且相對於上述SiC基材中之SiC與上述SiO2 層中之SiO2 之總含量,上述SiO2 層中之SiO2 之含量為1~4重量%;於至少載置有作為被燒成物之積層陶瓷電容器之部分之上述SiO2 層表面,形成有包含ZrO2 或Al2 O3 中之至少任一者之被覆層。A tool material for firing a multilayer ceramic capacitor, comprising: a SiC substrate; and an SiO 2 layer formed on the surface of the SiC substrate by oxidation treatment; and a viewing porosity of the tool material for firing the multilayer ceramic capacitor 15% or more, depending on the specific gravity of 3.05 ~ 3.20, SiC content of not less than 90% by weight; SiO with respect to the total content of the SiC substrate and the SiC layer 2 of the above-described SiO 2, SiO 2 layer of the above-described SiO The content of 2 is 1 to 4% by weight; at least one of ZrO 2 or Al 2 O 3 is formed on the surface of the SiO 2 layer on which at least a portion of the multilayer ceramic capacitor as the object to be fired is placed. Covered layer. 一種積層陶瓷電容器燒成用工具材料,其特徵在於:具有SiC基材、以及藉由氧化處理而形成於上述SiC基材表面之SiO2 層;上述積層陶瓷電容器燒成用工具材料之視孔隙度為15%以上,視比重為3.05~3.20,SiC含量為90重量%以上;且相對於上述SiC基材中之SiC與上述SiO2 層中之SiO2 之總含量,上述SiO2 層中之SiO2 之含量為1~4重量%;且於至少載置有作為被燒成物之積層陶瓷電容器之部分之上述SiO2 層表面上,具有包含ZrO2 或Al2 O3 中之至少任一者且藉由熔射法而形成之被覆層;並且於上述SiO2 層與上述被覆層之間,形成有包含Al2 O3 或Al2 O3 -SiO2 中之至少任一者之中間層。A tool material for firing a ceramic capacitor according to the present invention, comprising: a SiC substrate; and an SiO 2 layer formed on the surface of the SiC substrate by oxidation treatment; and a viewing porosity of the tool material for firing the multilayer ceramic capacitor 15% or more, depending on the specific gravity of 3.05 ~ 3.20, SiC content of not less than 90% by weight; SiO with respect to the total content of the SiC substrate and the SiC layer 2 of the above-described SiO 2, SiO 2 layer of the above-described SiO The content of 2 is 1 to 4% by weight; and at least one of ZrO 2 or Al 2 O 3 is contained on the surface of the SiO 2 layer on which at least a portion of the multilayer ceramic capacitor as the object to be fired is placed. And a coating layer formed by a sputtering method; and an intermediate layer containing at least one of Al 2 O 3 or Al 2 O 3 —SiO 2 is formed between the SiO 2 layer and the coating layer. 一種積層陶瓷電容器燒成用工具材料之製造方法,其特徵在於包括:於SiC粉末原料中,添加燒結後之殘碳率未達5.0重量 %之量之有機黏合劑並加以混合,以獲得混合粉末之步驟;於上述混合物中添加水後,經捏合、成形而獲得多孔質成形體之步驟;以1500℃以上、2400℃以下之溫度燒結上述多孔質成形體,以獲得燒結體之步驟;於氧氣濃度為2%以上之氧氣環境下,以1350℃以上、1650℃以下之溫度對上述燒結體進行1小時以上、6小時以下之燒成,於該燒結體表面上形成SiO2 層之步驟;以及藉由熔射法而於上述SiO2 層表面上形成包含ZrO2 或Al2 O3 中之至少任一者之被覆層之步驟。A method for producing a tool material for firing a multilayer ceramic capacitor, comprising: adding an organic binder having a residual carbon ratio of less than 5.0% by weight after sintering to a raw material of SiC powder, and mixing to obtain a mixed powder a step of obtaining a porous formed body by kneading and molding after adding water to the mixture; and sintering the porous formed body at a temperature of 1500 ° C or higher and 2400 ° C or lower to obtain a sintered body; In the oxygen atmosphere having a concentration of 2% or more, the sintered body is fired at a temperature of 1350 ° C or higher and 1650 ° C or lower for 1 hour or longer and 6 hours or shorter to form an SiO 2 layer on the surface of the sintered body; A step of forming a coating layer containing at least one of ZrO 2 or Al 2 O 3 on the surface of the SiO 2 layer by a sputtering method. 一種積層陶瓷電容器燒成用工具材料之再生方法,其特徵在於:其係再生如請求項1之上述積層陶瓷電容器燒成用工具材料者;上述積層陶瓷電容器燒成用工具材料之再生方法於將上述燒成用工具材料使用數次之後,包括:去除形成於上述SiC基材之表面之上述SiO2 層及上述被覆層之步驟;於上述SiC基材之表面上重新形成SiO2 層之步驟;以及於重新形成之上述SiO2 層之表面上,再形成厚度為30 μm以上、500 μm以下、且以Al2 O3 、ZrO2 、Al2 O3 -SiO2 、及ZrSiO4 中之至少一種或複數種為主成分之被覆 層的步驟。A method for regenerating a tool material for firing a multilayer ceramic capacitor, characterized in that the material for firing the laminated ceramic capacitor according to claim 1 is reproduced; and the method for regenerating the tool material for firing the multilayer ceramic capacitor is After the polishing tool material is used several times, the method includes the steps of: removing the SiO 2 layer and the coating layer formed on the surface of the SiC substrate; and re-forming the SiO 2 layer on the surface of the SiC substrate; And forming a thickness of 30 μm or more and 500 μm or less on the surface of the reformed SiO 2 layer, and at least one of Al 2 O 3 , ZrO 2 , Al 2 O 3 —SiO 2 , and ZrSiO 4 Or a plurality of steps of coating the main component. 一種積層陶瓷電容器燒成用工具材料之再生方法,其特徵在於:其係再生如請求項2之上述積層陶瓷電容器燒成用工具材料者;上述積層陶瓷電容器燒成用工具材料之再生方法於將上述燒成用工具材料使用數次之後,包括:去除形成於上述SiC基材之表面之上述SiO2 層及上述被覆層之步驟;於上述SiC基材之表面上重新形成SiO2 層之步驟;以及於重新形成之上述SiO2 層之表面上,再形成厚度為30 μm以上、500 μm以下、且以Al2 O3 、ZrO2 、Al2 O3 -SiO2 、及ZrSiO4 中之至少一種或複數種為主成分之被覆層的步驟。A method for regenerating a tool material for firing a multilayer ceramic capacitor, characterized in that the material for firing the laminated ceramic capacitor according to claim 2 is reproduced; and the method for regenerating the tool material for firing the multilayer ceramic capacitor is After the polishing tool material is used several times, the method includes the steps of: removing the SiO 2 layer and the coating layer formed on the surface of the SiC substrate; and re-forming the SiO 2 layer on the surface of the SiC substrate; And forming a thickness of 30 μm or more and 500 μm or less on the surface of the reformed SiO 2 layer, and at least one of Al 2 O 3 , ZrO 2 , Al 2 O 3 —SiO 2 , and ZrSiO 4 Or a plurality of steps of coating the main component. 一種積層陶瓷電容器燒成用工具材料之再生方法,其特徵在於:其係再生如請求項1之上述積層陶瓷電容器燒成用工具材料者;上述積層陶瓷電容器燒成用工具材料之再生方法於將上述燒成用工具材料使用數次之後,包括:去除形成於上述SiC基材之表面之上述SiO2 層及上述被覆層之步驟;於氧化環境中以1350℃以上之溫度進行2小時以上 之加熱處理,藉此於上述SiC基材之表面上重新形成SiO2 層之步驟;以及於重新形成之上述SiO2 層之表面上,再形成厚度為30 μm以上、500 μm以下、且以Al2 O3 、ZrO2 、Al2 O3 -SiO2 、及ZrSiO4 中之至少一種或複數種為主成分之被覆層的步驟。A method for regenerating a tool material for firing a multilayer ceramic capacitor, characterized in that the material for firing the laminated ceramic capacitor according to claim 1 is reproduced; and the method for regenerating the tool material for firing the multilayer ceramic capacitor is After the baking tool material is used several times, the method includes the steps of removing the SiO 2 layer and the coating layer formed on the surface of the SiC substrate, and heating at a temperature of 1350 ° C or higher in an oxidizing atmosphere for 2 hours or longer. a step of re-forming the SiO 2 layer on the surface of the SiC substrate; and forming a thickness of 30 μm or more, 500 μm or less, and Al 2 O on the surface of the reformed SiO 2 layer 3. A step of coating at least one of ZrO 2 , Al 2 O 3 —SiO 2 , and ZrSiO 4 or a plurality of coating layers as a main component. 一種積層陶瓷電容器燒成用工具材料之再生方法,其特徵在於:其係再生如請求項2之上述積層陶瓷電容器燒成用工具材料者;上述積層陶瓷電容器燒成用工具材料之再生方法於將上述燒成用工具材料使用數次之後,包括:去除形成於上述SiC基材之表面之上述SiO2 層及上述被覆層之步驟;於氧化環境中以1350℃以上之溫度進行2小時以上之加熱處理,藉此於上述SiC基材之表面上重新形成SiO2 層之步驟;以及於重新形成之上述SiO2 層之表面上,再形成厚度為30 μm以上、500 μm以下、且以Al2 O3 、ZrO2 、Al2 O3 -SiO2 、及ZrSiO4 中之至少一種或複數種為主成分之被覆層的步驟。A method for regenerating a tool material for firing a multilayer ceramic capacitor, characterized in that the material for firing the laminated ceramic capacitor according to claim 2 is reproduced; and the method for regenerating the tool material for firing the multilayer ceramic capacitor is After the baking tool material is used several times, the method includes the steps of removing the SiO 2 layer and the coating layer formed on the surface of the SiC substrate, and heating at a temperature of 1350 ° C or higher in an oxidizing atmosphere for 2 hours or longer. a step of re-forming the SiO 2 layer on the surface of the SiC substrate; and forming a thickness of 30 μm or more, 500 μm or less, and Al 2 O on the surface of the reformed SiO 2 layer 3. A step of coating at least one of ZrO 2 , Al 2 O 3 —SiO 2 , and ZrSiO 4 or a plurality of coating layers as a main component. 一種積層陶瓷電容器燒成用工具材料之再生方法,其特徵在於:其係再生如請求項1之上述積層陶瓷電容器燒成用工 具材料者;上述積層陶瓷電容器燒成用工具材料之再生方法於將上述燒成用工具材料使用數次之後,包括:藉由珠粒噴擊或者平面研磨,而去除形成於上述SiC基材之表面之上述SiO2 層及上述被覆層之步驟;於氧化環境中以1350℃以上之溫度進行2小時以上之加熱處理,藉此於上述SiC基材之表面上重新形成SiO2 層之步驟;以及於重新形成之上述SiO2 層之表面上,再形成厚度為30 μm以上、500 μm以下、且以Al2 O3 、ZrO2 、Al2 O3 -SiO2 、及ZrSiO4 中之至少一種或複數為主成分之被覆層的步驟。A method for regenerating a tool material for firing a multilayer ceramic capacitor, characterized in that the material for firing the laminated ceramic capacitor according to claim 1 is reproduced; and the method for regenerating the tool material for firing the multilayer ceramic capacitor is After the polishing tool material is used several times, the method includes the steps of removing the SiO 2 layer and the coating layer formed on the surface of the SiC substrate by bead blasting or planar polishing; in an oxidizing environment a step of heat-treating at a temperature of 1350 ° C or higher for 2 hours or more to re-form a SiO 2 layer on the surface of the SiC substrate; and a thickness of 30 μm on the surface of the reformed SiO 2 layer The step of coating a layer containing at least one or a plurality of Al 2 O 3 , ZrO 2 , Al 2 O 3 —SiO 2 , and ZrSiO 4 as a main component, preferably 500 μm or less. 一種積層陶瓷電容器燒成用工具材料之再生方法,其特徵在於:其係再生如請求項2之上述積層陶瓷電容器燒成用工具材料者;上述積層陶瓷電容器燒成用工具材料之再生方法於將上述燒成用工具材料使用數次之後,包括:藉由珠粒噴擊或者平面研磨,而去除形成於上述SiC基材之表面之上述SiO2 層及上述被覆層之步驟;於氧化環境中以1350℃以上之溫度進行2小時以上之加熱處理,藉此於上述SiC基材之表面上重新形成SiO2 層之步驟;以及於重新形成之上述SiO2 層之表面上,再形成厚度為 30 μm以上、500 μm以下、且以Al2 O3 、ZrO2 、Al2 O3 -SiO2 、及ZrSiO4 中之至少一種或複數種為主成分之被覆層的步驟。A method for regenerating a tool material for firing a multilayer ceramic capacitor, characterized in that the material for firing the laminated ceramic capacitor according to claim 2 is reproduced; and the method for regenerating the tool material for firing the multilayer ceramic capacitor is After the polishing tool material is used several times, the method includes the steps of removing the SiO 2 layer and the coating layer formed on the surface of the SiC substrate by bead blasting or planar polishing; in an oxidizing environment a step of heat-treating at a temperature of 1350 ° C or higher for 2 hours or more to re-form a SiO 2 layer on the surface of the SiC substrate; and a thickness of 30 μm on the surface of the reformed SiO 2 layer The step of coating a layer containing at least one of a plurality of Al 2 O 3 , ZrO 2 , Al 2 O 3 —SiO 2 , and ZrSiO 4 as a main component, and 500 μm or less. 如請求項6至11中任一項之積層陶瓷電容器燒成用工具材料之再生方法,其中於重新形成上述被覆層之步驟中,使用電漿熔射、氣膠沈積、氣相沈積或化學氣相沈積(CVD)中之任一者或複數者之組合。 The method for regenerating a tool material for firing a multilayer ceramic capacitor according to any one of claims 6 to 11, wherein in the step of reforming the coating layer, plasma spraying, gas deposition, vapor deposition or chemical gas is used. A combination of any one or a plurality of phase depositions (CVD). 如請求項6至11中任一項之積層陶瓷電容器燒成用工具材料之再生方法,其中於重新形成上述被覆層之步驟係於塗佈漿料之後加熱至1400℃以上而進行燒接。The method for regenerating a tool material for firing a multilayer ceramic capacitor according to any one of claims 6 to 11, wherein the step of reforming the coating layer is followed by heating to a temperature of 1400 ° C or higher and then baking.
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TWI609162B (en) * 2014-06-27 2017-12-21 三井金屬鑛業股份有限公司 Calcination jig and method for producing the same

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TW200621675A (en) * 2004-12-28 2006-07-01 Ngk Insulators Ltd Firing jig for electronic element
TW200702320A (en) * 2005-07-06 2007-01-16 Ngk Insulators Ltd Firing tool for electronic component

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TW200621675A (en) * 2004-12-28 2006-07-01 Ngk Insulators Ltd Firing jig for electronic element
TW200702320A (en) * 2005-07-06 2007-01-16 Ngk Insulators Ltd Firing tool for electronic component

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI609162B (en) * 2014-06-27 2017-12-21 三井金屬鑛業股份有限公司 Calcination jig and method for producing the same

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