TWI383446B - Method for controlling etchant concentration - Google Patents

Method for controlling etchant concentration Download PDF

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TWI383446B
TWI383446B TW97138312A TW97138312A TWI383446B TW I383446 B TWI383446 B TW I383446B TW 97138312 A TW97138312 A TW 97138312A TW 97138312 A TW97138312 A TW 97138312A TW I383446 B TWI383446 B TW I383446B
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value
concentration
proportional
etchant
etching
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TW201015633A (en
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Chih Hsing Chen
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Abletek Inc
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Description

蝕刻液濃度控制方法Etching solution concentration control method

本案是指一種濃度控制方法,尤指一種蝕刻液濃度控制方法。This case refers to a concentration control method, especially a method for controlling the concentration of an etchant.

利用酸性或鹼性溶液的濕式蝕刻法,在當前電子產品的製程中已經成為相當普遍的製造方式,其應用於包括顯示器面板、半導體、電路板等技術領域。由於採用蝕刻法必須要維持蝕刻液濃度在一定的範圍內不產生過大變動,才能確保蝕刻速率的穩定,使製品品質能獲得控制。因此,蝕刻液濃度的控制方法成為製程中不可或缺的關鍵技術。The wet etching method using an acidic or alkaline solution has become a quite common manufacturing method in the current electronic product manufacturing process, and is applied to technical fields including display panels, semiconductors, and circuit boards. Since the etching method must maintain the concentration of the etching solution within a certain range without excessive variation, the etching rate can be stabilized and the quality of the product can be controlled. Therefore, the control method of the concentration of the etching liquid becomes an indispensable key technology in the process.

習用的濃度控制方法,例如台灣專利證書號1297517,是在固定時間間隔內將蝕刻液採樣進行濃度分析,然後比對兩次分析所得到蝕刻液濃度的變化量後,補充一定量的酸鹼藥液,使蝕刻液濃度維持穩定。但這種方法卻有缺點尚待克服,例如:(一)初始蝕刻液的濃度不易控制。開始進行蝕刻時,蝕刻液的濃度要先調整到適當濃度較佳。而習用技術只能根據兩次測量結果,將蝕刻液濃度補充至「上次測量濃度」,但如果上次測量濃度非初始的適當濃度,那麼就算補充藥液也永遠無法補充到適當濃度。The conventional concentration control method, such as Taiwan Patent No. 1297517, is to sample the etching solution for concentration analysis at a fixed time interval, and then compare the amount of change in the concentration of the etching solution obtained by the two analyses, and then add a certain amount of the acid-base drug. The liquid keeps the concentration of the etchant stable. However, this method has its shortcomings to be overcome, for example: (1) The concentration of the initial etching solution is not easy to control. When the etching is started, it is preferable to adjust the concentration of the etching liquid to an appropriate concentration. However, the conventional technique can only add the etchant concentration to the "last measured concentration" based on the two measurement results, but if the last measured concentration is not the initial proper concentration, then the replenishing solution can never be replenished to the appropriate concentration.

(二)補充藥液的管路所造成的補酸延遲因素未考慮進去。熟悉本領域技藝者當知,蝕刻液容易使管路產生阻塞導致流動速度受影響,連帶造成補藥的誤差,且管路的長度也會影響補藥的速度。儘管習用技術採用預估蝕刻液消耗速率 來補充藥液,試圖防止補藥誤差,但實際運用上因其濃度控制方式過於簡單,依舊無法達到穩定控酸的目的。因此更容易發生補充不足或過多的狀況,難以達到穩定補藥的要求。(2) The acid supplement delay factor caused by the supplemental liquid pipeline is not taken into account. Those skilled in the art are aware that the etchant tends to cause blockage of the tubing and the flow velocity is affected, which in turn causes errors in the tonic, and the length of the tubing also affects the rate of replenishment. Although the conventional technique uses the estimated etchant consumption rate To replenish the liquid, try to prevent the tonic error, but the actual application is too simple, and still can not achieve the purpose of stable acid control. Therefore, it is more prone to insufficient or excessive replenishment, and it is difficult to achieve the requirement of stable tonic.

上述這些問題點,都使蝕刻液濃度控制要耗費相當時間與成本卻無法提高產品品質。因此,發明一種更精確的蝕刻液濃度控制方法,在本領域已屬刻不容緩。All of the above problems make it difficult to improve the quality of the product by controlling the concentration of the etching solution. Therefore, inventing a more precise method for controlling the concentration of the etching liquid has been urgently required in the art.

職是之故,申請人鑑於習知技術中所產生的缺失,經過悉心試驗與研究,並一本鍥而不捨的精神,終構思出本案「蝕刻液濃度控制方法」,能夠克服上述缺點,以下是本案的簡要說明。For the sake of the job, the applicant, based on the lack of knowledge in the prior art, has carefully tested and researched, and has a perseverance spirit, and finally conceived the "etching liquid concentration control method" in this case, which can overcome the above shortcomings. The following is the case. A brief description.

本案發明人在反覆思考後提出本發明的蝕刻液濃度控制方法。當依本發明所揭露的方法進行蝕刻液的濃度控制時,需要在製程中持續測量蝕刻液濃度,然後根據測量的濃度值與使用者期望的理想濃度值的差異,進行積分、微分以及比例化等計算方式得到酸鹼藥液的補充量以進行補藥維持蝕刻液濃度。由於本發明隨時監控濃度變化,且能隨濃度變化狀況調整計算公式的相關參數,因此能即時提供回饋控制資訊,使藥液準確且持續地補充,維持蝕刻液濃度的穩定。本發明具有提高生產效能與產品品質的優點。The inventor of the present invention proposed the etching liquid concentration control method of the present invention after rethinking. When the concentration of the etching solution is controlled according to the method disclosed in the present invention, it is necessary to continuously measure the concentration of the etching solution in the process, and then perform integration, differentiation, and scaling according to the difference between the measured concentration value and the desired concentration value desired by the user. The calculation method obtains the supplement amount of the acid-base liquid to carry out the medicine to maintain the concentration of the etching liquid. Since the present invention monitors the concentration change at any time, and can adjust the relevant parameters of the calculation formula according to the concentration change condition, the feedback control information can be provided immediately, so that the liquid medicine can be accurately and continuously replenished, and the concentration of the etching liquid is stabilized. The invention has the advantages of improving production efficiency and product quality.

根據本發明的構想,提出一種蝕刻液濃度控制方法,包括下列步驟:設定一蝕刻液的一目標濃度值;測量該蝕刻液得到一量測濃度值;根據該目標濃度值與該量測濃度值,而計算出一差值;比例化該差值而得一比例值;比例化該差值 的一時間積分值而得一比例積分值;比例化該差值的一時間微分值而得一比例微分值;及根據該比例值、該比例積分值及該比例微分值,補充該蝕刻液濃度至該目標濃度值。According to the concept of the present invention, a method for controlling an etchant concentration is provided, comprising the steps of: setting a target concentration value of an etchant; measuring the etchant to obtain a measured concentration value; and determining the concentration value according to the target concentration value And calculating a difference; scaling the difference to obtain a proportional value; scaling the difference a time integral value obtains a proportional integral value; proportionalizing a time differential value of the difference to obtain a proportional differential value; and supplementing the etching solution concentration according to the proportional value, the proportional integral value, and the proportional differential value To the target concentration value.

較佳地,本發明所提供的蝕刻液濃度控制方法,更包含採用一離子層析法、一滴定法以及一光譜分析法任選其一的方式測量蝕刻液濃度。Preferably, the method for controlling the concentration of the etching solution provided by the present invention further comprises measuring the concentration of the etching solution by using one of ion chromatography, one titration and one spectral analysis.

較佳地,本發明所提供的蝕刻液濃度控制方法,其中該滴定法以微泵(micropump)自該蝕刻液中抽取一蝕刻液樣本。Preferably, the etchant concentration control method provided by the present invention, wherein the titration method extracts an etchant sample from the etchant by a micropump.

較佳地,本發明所提供的蝕刻液濃度控制方法,更包含從丙二醇、甘油、異丙醇所成群組中選出一稀釋液,以稀釋該蝕刻液樣本。Preferably, the etchant concentration control method provided by the present invention further comprises selecting a diluent from the group consisting of propylene glycol, glycerin and isopropyl alcohol to dilute the etchant sample.

較佳地,本發明所提供的蝕刻液濃度控制方法,更包含當該時間微分值落於一第一範圍時,則該比例積分值是零。Preferably, the etchant concentration control method provided by the present invention further comprises: when the time differential value falls within a first range, the proportional integral value is zero.

較佳地,本發明所提供的蝕刻液濃度控制方法,更包含當該時間微分值落於一第二範圍時,則該比例微分值是零。Preferably, the etchant concentration control method provided by the present invention further comprises: when the time differential value falls within a second range, the proportional differential value is zero.

較佳地,本發明所提供的蝕刻液濃度控制方法,更包含當該時間微分值落於一第三範圍時,則該比例微分值是負值。Preferably, the etchant concentration control method provided by the present invention further comprises: when the time differential value falls within a third range, the proportional differential value is a negative value.

較佳地,本發明所提供的蝕刻液濃度控制方法,其中該蝕刻液係選自氫氧化鈉、氫氧化鉀、氨所成群組。Preferably, the method for controlling the concentration of an etchant provided by the present invention, wherein the etchant is selected from the group consisting of sodium hydroxide, potassium hydroxide, and ammonia.

較佳地,本發明所提供的蝕刻液濃度控制方法,其中該蝕刻液係選自鹽酸、氫氟酸、硝酸、醋酸、磷酸、硫酸所成群組。Preferably, the method for controlling the concentration of an etching solution provided by the present invention, wherein the etching liquid is selected from the group consisting of hydrochloric acid, hydrofluoric acid, nitric acid, acetic acid, phosphoric acid, and sulfuric acid.

較佳地,本發明所提供的蝕刻液濃度控制方法,更包含當該目標濃度值大於該量測濃度值時,則根據該差值增加該 蝕刻液濃度至該目標濃度值。Preferably, the etchant concentration control method provided by the present invention further comprises: when the target concentration value is greater than the measured concentration value, increasing the The etchant concentration is to the target concentration value.

較佳地,本發明所提供的蝕刻液濃度控制方法,更包含當該目標濃度值小於該量測濃度值時,則根據該差值減少該蝕刻液濃度至該目標濃度值。Preferably, the etchant concentration control method provided by the present invention further comprises: when the target concentration value is less than the measured concentration value, reducing the etchant concentration to the target concentration value according to the difference.

復根據本發明的構想,提出一種蝕刻液濃度控制方法,包括下列步驟:監控一蝕刻液的一濃度變化值;比例化該濃度變化值而得一比例值;比例化該濃度變化值的一時間積分值而得一比例積分值;比例化該濃度變化值的一時間微分值而得一比例微分值;及根據該比例值、該比例積分值及該比例微分值,補充該蝕刻液。According to the concept of the present invention, a method for controlling the concentration of an etching solution is provided, comprising the steps of: monitoring a concentration change value of an etching solution; and proportionalizing the concentration change value to obtain a proportional value; and prolonging the concentration change value for a time. The integral value is obtained as a proportional integral value; a time differential value of the concentration change value is proportional to obtain a proportional differential value; and the etching liquid is supplemented according to the proportional value, the proportional integral value and the proportional differential value.

較佳地,本發明所提供的蝕刻液濃度控制方法,更包含設定該蝕刻液的一第一濃度值,測量該蝕刻液得到一第二濃度值,並根據該第一濃度值與該第二濃度值,得到該濃度變化值。Preferably, the etchant concentration control method provided by the present invention further includes setting a first concentration value of the etchant, measuring the etchant to obtain a second concentration value, and according to the first concentration value and the second The concentration value is obtained to obtain the concentration change value.

較佳地,本發明所提供的蝕刻液濃度控制方法,更包含採用一離子層析法、一滴定法以及一光譜分析法任選其一的方式測量蝕刻液濃度。Preferably, the method for controlling the concentration of the etching solution provided by the present invention further comprises measuring the concentration of the etching solution by using one of ion chromatography, one titration and one spectral analysis.

較佳地,本發明所提供的蝕刻液濃度控制方法,其中該滴定法以微泵(micropump)自該蝕刻液中抽取一蝕刻液樣本。Preferably, the etchant concentration control method provided by the present invention, wherein the titration method extracts an etchant sample from the etchant by a micropump.

較佳地,本發明所提供的蝕刻液濃度控制方法,更包含從丙二醇、甘油、異丙醇所成群組中選出一稀釋液,以稀釋該蝕刻液樣本。Preferably, the etchant concentration control method provided by the present invention further comprises selecting a diluent from the group consisting of propylene glycol, glycerin and isopropyl alcohol to dilute the etchant sample.

較佳地,本發明所提供的蝕刻液濃度控制方法,更包含當該時間微分值落於一第一範圍時,則該比例積分值是零。Preferably, the etchant concentration control method provided by the present invention further comprises: when the time differential value falls within a first range, the proportional integral value is zero.

較佳地,本發明所提供的蝕刻液濃度控制方法,更包含當該時間微分值落於一第二範圍時,則該比例微分值是零。Preferably, the etchant concentration control method provided by the present invention further comprises: when the time differential value falls within a second range, the proportional differential value is zero.

較佳地,本發明所提供的蝕刻液濃度控制方法,更包含當該時間微分值落於一第三範圍時,則該比例微分值是負值。Preferably, the etchant concentration control method provided by the present invention further comprises: when the time differential value falls within a third range, the proportional differential value is a negative value.

較佳地,本發明所提供的蝕刻液濃度控制方法,其中該蝕刻液係選自氫氧化鈉、氫氧化鉀、氨所成群組。Preferably, the method for controlling the concentration of an etchant provided by the present invention, wherein the etchant is selected from the group consisting of sodium hydroxide, potassium hydroxide, and ammonia.

較佳地,本發明所提供的蝕刻液濃度控制方法,其中該蝕刻液係選自鹽酸、氫氟酸、硝酸、醋酸、磷酸、硫酸所成群組。Preferably, the method for controlling the concentration of an etching solution provided by the present invention, wherein the etching liquid is selected from the group consisting of hydrochloric acid, hydrofluoric acid, nitric acid, acetic acid, phosphoric acid, and sulfuric acid.

較佳地,本發明所提供的蝕刻液濃度控制方法,其中該比例值是該濃度變化值與一第一定數的乘積,該比例積分值是該時間積分值與一第二定數的乘積,該比例微分值是該時間微分值與一第三定數的乘積。Preferably, the etchant concentration control method provided by the present invention, wherein the proportional value is a product of the concentration change value and a first fixed number, wherein the proportional integral value is a product of the time integral value and a second fixed number The proportional differential value is the product of the time differential value and a third fixed number.

復根據本發明的構想,提出一種能實施上述方法的裝置。In accordance with the teachings of the present invention, an apparatus capable of implementing the above method is presented.

本案將可由以下的實施例說明而得到充分瞭解,使得熟習本技藝人士可以據以實施,然本案的實施並非可由下列實施案例而被限制其實施型態。The present invention will be fully understood by the following examples, which can be implemented by those skilled in the art, and the implementation of the present invention may not be limited by the following embodiments.

請參閱第一圖,其為本案發明的方法所搭配的蝕刻液濃度分析及控制裝置示意圖。蝕刻機側1大致上為習用的蝕刻機結構,其包括蝕刻液槽10、循環泵浦11、循環管路12。蝕刻液槽10用來儲存蝕刻液以進行蝕刻反應,蝕刻液槽10內的蝕刻液則包含例如氫氧化鈉、氫氧化鉀、氨等習用的鹼性溶液與其混合溶液,以及例如鹽酸、氫氟酸、硝酸、醋酸、 磷酸、硫酸等習用的酸性溶液與其混合溶液。循環泵浦11用來將進行蝕刻反應後的蝕刻液抽回,經過循環管路12送回蝕刻液槽10以重複進行蝕刻反應。Please refer to the first figure, which is a schematic diagram of an etchant concentration analysis and control device matched with the method of the present invention. The etch machine side 1 is generally a conventional etch machine structure including an etchant tank 10, a circulation pump 11, and a circulation line 12. The etching liquid tank 10 is used for storing an etching liquid for performing an etching reaction, and the etching liquid in the etching liquid tank 10 contains a conventional alkaline solution such as sodium hydroxide, potassium hydroxide or ammonia, and a mixed solution thereof, and, for example, hydrochloric acid and hydrofluoric acid. Acid, nitric acid, acetic acid, A solution of a conventional acidic solution such as phosphoric acid or sulfuric acid and a mixed solution thereof. The circulation pump 11 is for withdrawing the etching liquid after the etching reaction, and returns it to the etching liquid tank 10 through the circulation line 12 to repeat the etching reaction.

濃度分析及控制側2則包括藥液桶20、加藥機21、分析儀22。分析儀22連接一分析管路23,分析管路23則連接循環管路12,使循環管路12內流動的蝕刻液能被分析儀22以微泵(micro pump,圖未顯示)所抽取,並在分析儀22內對抽取出來的蝕刻液樣本進行分析。藥液桶20內配備用來補充蝕刻液槽10內蝕刻液的藥液,加藥機21則根據分析儀22的指示送出該藥液,經由加藥機21與蝕刻液槽10相連的控制管路24,將該藥液補充至蝕刻液槽10。The concentration analysis and control side 2 includes a liquid medicine tank 20, a dosing machine 21, and an analyzer 22. The analyzer 22 is connected to an analysis line 23, and the analysis line 23 is connected to the circulation line 12, so that the etching liquid flowing in the circulation line 12 can be extracted by the analyzer 22 by a micro pump (not shown). The extracted etchant samples are analyzed in the analyzer 22. The chemical liquid tank 20 is provided with a chemical liquid for supplementing the etching liquid in the etching liquid tank 10, and the dosing machine 21 sends the chemical liquid according to the instruction of the analyzer 22, and the control tube connected to the etching liquid tank 10 via the dosing machine 21 is provided. The liquid 24 replenishes the chemical solution to the etching solution tank 10.

需要特別指出的是,加藥機21可連接複數個藥液桶20(圖未顯示),能視情況需要進行不同種類藥液的補充,例如當蝕刻液濃度過高時還可以補充水,用以降低蝕刻液濃度。It should be particularly noted that the dosing machine 21 can be connected to a plurality of liquid medicine tanks 20 (not shown), and can be supplemented with different kinds of liquid medicines as needed, for example, when the concentration of the etching liquid is too high, water can be replenished. To reduce the concentration of the etching solution.

由於循環管路12內的蝕刻液流動速度較慢,因此分析儀22內需要配置微泵,才能經由分析管路23更有效率的抽取蝕刻液樣本,並減少氣泡產生而便於進行分析。分析儀22可將抽取到的蝕刻液樣本,再加入乙二醇、丙二醇、甘油、異丙醇等醇類做為稀釋液進行稀釋,其中因丙二醇無毒,屬於較佳選擇。以非水性的酸鹼中和滴定法,測量例如由酸性或鹼性混合溶液所構成的蝕刻液樣本中各酸性自由基的當量濃度,得到一量測濃度值。當然,分析儀除了使用滴定法量測濃度外,還可以使用離子層析法或光譜分析法,來測量蝕刻液中各主要成分的濃度值。Since the flow rate of the etchant in the circulation line 12 is slow, the micropump needs to be disposed in the analyzer 22 to extract the etchant sample more efficiently through the analysis line 23, and to reduce bubble generation for analysis. The analyzer 22 can dilute the extracted etchant sample by adding an alcohol such as ethylene glycol, propylene glycol, glycerin or isopropanol as a diluent, wherein the propylene glycol is non-toxic and is a preferred choice. The equivalent concentration of each acidic radical in the etchant sample composed of, for example, an acidic or alkaline mixed solution is measured by a non-aqueous acid-base neutralization titration method to obtain a measured concentration value. Of course, in addition to measuring the concentration by titration, the analyzer can also use ion chromatography or spectroscopic analysis to measure the concentration values of the main components in the etching solution.

在本發明中,分析儀22可以預先設定,並可隨需要變更 蝕刻液的目標濃度值,但通常是在蝕刻製程開始前或首次測量蝕刻液濃度前要設定好。熟知本領域技藝者會經過累次的實驗與製造過程,經由適當選擇而決定一概略範圍的較佳反應的目標濃度值,也因此目標濃度值也可以設定為一範圍區間,但本案實施例將目標濃度值以一定值來說明。該目標濃度值為進行蝕刻反應時,做為與該量測濃度值比對依據。In the present invention, the analyzer 22 can be preset and can be changed as needed The target concentration of the etchant, but usually set before the start of the etch process or before the etchant concentration is measured for the first time. Those skilled in the art will determine the target concentration value of a preferred range of preferred reactions through appropriate selection and selection, and thus the target concentration value may also be set to a range interval, but the embodiment of the present invention will target The concentration value is stated by a certain value. The target concentration value is used as a basis for comparison with the measured concentration value when the etching reaction is performed.

此外,當分析儀22獲得該量測濃度值後,則將該量測濃度值與該目標濃度值做比對,若該量測濃度值大於該目標濃度值,則分析儀22會根據該量測濃度值與該目標濃度值的一差值P,指示加藥機21補充水或停止補藥程序,以降低蝕刻液槽10內的蝕刻液濃度,使槽內的蝕刻液濃度稀釋至目標濃度值。若該量測濃度值小於該目標濃度值,則分析儀22會根據該量測濃度值與該目標濃度值的一差值P,指示加藥機21補充特定種類的酸性或鹼性藥液,以增加蝕刻液槽10內的蝕刻液濃度,使槽內的蝕刻液濃度增加至目標濃度值。In addition, after the analyzer 22 obtains the measured concentration value, the measured concentration value is compared with the target concentration value, and if the measured concentration value is greater than the target concentration value, the analyzer 22 according to the amount A difference P between the measured concentration value and the target concentration value indicates that the dosing machine 21 replenishes the water or stops the replenishing process to reduce the concentration of the etching solution in the etching solution tank 10, so that the concentration of the etching solution in the tank is diluted to the target concentration value. . If the measured concentration value is less than the target concentration value, the analyzer 22 instructs the dosing device 21 to supplement a specific type of acidic or alkaline liquid according to a difference P between the measured concentration value and the target concentration value. The concentration of the etching solution in the etching bath 10 is increased to increase the concentration of the etching solution in the bath to the target concentration value.

請參見第二圖,其為本案所提出的蝕刻液濃度控制方法的一實施例的流程圖。其步驟包括:(S1)設定蝕刻液的一目標濃度值;(S2)測量蝕刻液得到一量測濃度值;(S3)根據該目標濃度值與該量測濃度值,而計算出濃度差值P;(S4)計算差值P的時間積分值I與時間微分值D;(S5)根據時間微分值D,決定積分係數Ki與微分係數Kd;(S6)根據比例係數Kp、積分係數Ki與微分係數Kd,分別比例化差值P、時間積分值I與時間微分值D;(S7)根據S6結果計算補藥量U以補充藥液。Please refer to the second figure, which is a flow chart of an embodiment of the etching liquid concentration control method proposed in the present application. The steps include: (S1) setting a target concentration value of the etching liquid; (S2) measuring the etching liquid to obtain a measured concentration value; (S3) calculating the concentration difference according to the target concentration value and the measured concentration value; P; (S4) calculating the time integral value I of the difference P and the time differential value D; (S5) determining the integral coefficient Ki and the differential coefficient Kd according to the time differential value D; (S6) according to the proportional coefficient Kp, the integral coefficient Ki and The differential coefficient Kd is respectively proportional to the difference value P, the time integral value I and the time differential value D; (S7) calculating the tonic amount U according to the result of S6 to replenish the drug solution.

需要特別指出,第二圖所示的實施例並不限定要以第一 圖的裝置進行,本實施方法僅列出較佳實施方式,因此只要能符合本案申請專利範圍所述的方法,都屬於本發明的範圍。此外,上述步驟S1並不限定於必須要第一個進行的步驟,實際上也可以與S2步驟同時進行,且每次測量到補藥完畢仍可重複該些測量補藥步驟。It should be noted that the embodiment shown in the second figure is not limited to the first The apparatus of the drawings is carried out, and the present embodiment only lists the preferred embodiments, and therefore, it is within the scope of the invention as long as it conforms to the method described in the patent application scope of the present application. In addition, the above step S1 is not limited to the step that must be performed first, and may actually be performed simultaneously with the step S2, and the measurement dosing steps may be repeated each time the dosing is completed.

本案所採用的比例、積分、微分控制方法,簡單來說是如上述根據濃度差值P決定補藥量U,但其細節則如下所述。首先,計算出蝕刻液目標濃度值與量測濃度值的差值P,再求得該差值P的時間微分D與時間積分I,根據差值P、時間積分I、時間微分D,分別乘上一比例係數Kp、積分係數Ki、微分係數Kd、而計算出補酸量。其簡單公式如下述公式1:<公式1>U=Kp×P+Ki×I×Kd×D公式1是一簡化公式,實際上是由下述公式2而來。The proportional, integral, and differential control methods used in this case are simply the above-described determination of the amount of replenishment U based on the difference in concentration P, but the details are as follows. First, the difference P between the target concentration value of the etching solution and the measured concentration value is calculated, and then the time differential D and the time integral I of the difference P are obtained, and are respectively multiplied according to the difference P, the time integral I, and the time differential D. The amount of acid supplementation is calculated by the previous proportional coefficient Kp, the integral coefficient Ki, and the differential coefficient Kd. The simple formula is as follows: <Formula 1> U = Kp × P + Ki × I × Kd × D Equation 1 is a simplified formula, which is actually derived from the following formula 2.

<公式2>U(t)=Kp×[P(t)+1/Ti×∫p(t)dt+Td×dP(t)/dt]<Formula 2>U(t)=Kp×[P(t)+1/Ti×∫p(t)dt+Td×dP(t)/dt]

在公式2中,Ti是積分時間,Td是微分時間,且Ki=Kp/Ti,Kd=Kp×Td。通常僅有比例控制時,若在t時間的輸入值是U(t)與輸出值是P(t),且U0 是維持P(t)=P0 所必要的輸入值(P0 為目標濃度值),因此在ΔU(t)=U(t)-U0 、ΔP(t)=P(t)-P0 的關係成立的前提下,比例控制應滿足ΔU(t)= Kp×ΔP(t)的公式。In Equation 2, Ti is the integration time, Td is the differential time, and Ki = Kp / Ti, Kd = Kp × Td. Usually only for proportional control, if the input value at time t is U(t) and the output value is P(t), and U 0 is the input value necessary to maintain P(t)=P 0 (P 0 is the target Concentration value), therefore, under the premise that the relationship of ΔU(t)=U(t)-U 0 and ΔP(t)=P(t)-P 0 is established, the proportional control should satisfy ΔU(t)= Kp×ΔP Formula of (t).

上述公式比例控制的概念就是消除目前的濃度差值P,即濃度差值P越大,需要的補藥量U也越大,兩者必然成一比例關係。積分控制的概念是平均過去的濃度差,用來消除目標濃度值與量測濃度值的固定偏差,微分控制則是透過濃度差的變化趨勢來預測將來的濃度差,用來修正補酸量在目標值上下來回震盪的現象,綜合三個方向給予較習用技術更細緻完整的濃度控制,而通常習用技術最多只能做到比例控制。The concept of proportional control of the above formula is to eliminate the current concentration difference P, that is, the larger the concentration difference P, the larger the amount of replenishment U required, and the two must be in a proportional relationship. The concept of integral control is the average past concentration difference, which is used to eliminate the fixed deviation between the target concentration value and the measured concentration value. The differential control is to predict the future concentration difference through the change trend of the concentration difference, which is used to correct the acid supplement amount. The phenomenon of target value oscillating up and down, combined with the three directions to give more detailed and complete concentration control than the conventional technology, and usually the conventional technology can only achieve proportional control.

在本案的蝕刻液濃度控制方法中,僅有比例控制時,由於藥液的補充與蝕刻液濃度的測量需要時間,這段時間濃度的變化需要積分控制來增加補藥量,而補藥時考量到控制管路的阻塞程度,使得藥液補充可能會有延遲的現象。因此,為防止之後的量測濃度值又錯估了實際的狀況,最後導致補充過多的藥液。因此需要加入微分控制,且微分係數Kd應為負值為較佳。In the etchant concentration control method of the present case, when the ratio control is performed, since the replenishment of the chemical solution and the measurement of the concentration of the etchant require time, the change of the concentration during this period requires integral control to increase the amount of replenishment, and the control of the tonic is controlled. The degree of blockage of the tubing may cause delays in the replenishment of the drug solution. Therefore, in order to prevent the subsequent measurement of the concentration value, the actual situation is miscalculated, and finally, the excess liquid is replenished. Therefore, it is necessary to add differential control, and the differential coefficient Kd should be negative.

但光是以比例、積分、微分來控制蝕刻液濃度其實仍有不足之處,受制於蝕刻液的物理性質較為濃稠,藥液槽通往蝕刻槽的補藥管路也易隨著蝕刻時間而產生相當程度的遲滯阻塞,因此上述公式應增加視蝕刻狀況改變補藥量U的調整。However, there are still some shortcomings in controlling the concentration of the etching solution by proportional, integral and differential. The physical properties of the etching solution are thick, and the replenishing pipeline leading to the etching tank is easy to follow the etching time. A considerable degree of hysteresis blockage is generated, so the above formula should increase the adjustment of the dosing amount U depending on the etching condition.

由於補藥延遲的狀況能以測量蝕刻液濃度差值變化得到依據,因此本案可隨著該D值大小變化,例如D值當落入第一範圍內時,調整三種控制方式所採用的比例係數Kp、積分係數Ki、微分係數Kd的值,或任選一上述係數值來調整,使比例值Kp×P、比例積分值Ki×I、比例微分值Kd×D產生 相對應的改變,進而計算出依D值改變的補藥量U(輸出量)。Since the condition of the tonic delay can be obtained by measuring the variation of the concentration of the etching solution, the present case can vary with the magnitude of the D value. For example, when the D value falls within the first range, the proportional coefficient Kp used for the three control modes is adjusted. , the integral coefficient Ki, the value of the differential coefficient Kd, or optionally one of the above coefficient values to adjust, such that the proportional value Kp × P, the proportional integral value Ki × I, the proportional differential value Kd × D generated Corresponding changes, in turn, calculate the amount of supplement U (output) that varies according to the value of D.

在本案的控制方法中,時間積分I與時間微分D需要累計數次測量結果,才能得到充分可資利用的數據,因此儘管Kp、Ki、Kd通常為適當選擇而設定的定數,但仍可在蝕刻製程開始後的前兩~三次濃度測量步驟時(蝕刻初期,該時段的D值以落於一區間[a0 ,b0 ]來定義),而當D值落入該區間[a0 ,b0 ]時,則讓Ki與kd設為零,使比例積分值與比例微分值無效化。也就是說,初期可僅以比例控制來維持蝕刻液濃度,Ki與Kd的數值則可在D值計算出來並落入適當選擇的預定區間[a0 ,b0 ]後開始變化,當然僅讓Ki或Kd分別在D值落入區間[a0 ,b0 ]或區間[a’0 ,b’0 ]內時而設為零,也屬於本發明的範圍。In the control method of the present case, the time integral I and the time differential D need to accumulate several measurement results in order to obtain sufficiently usable data, so although Kp, Ki, and Kd are usually fixed numbers set by appropriate selection, In the first two to three concentration measurement steps after the start of the etching process (in the initial stage of etching, the D value of the period is defined as falling within an interval [a 0 , b 0 ]), and when the value of D falls within the interval [a 0 When b 0 ], let Ki and kd be set to zero, and the proportional integral value and the proportional differential value are invalidated. That is to say, in the initial stage, the concentration of the etching solution can be maintained only by proportional control, and the values of Ki and Kd can be changed after the D value is calculated and falls within the appropriately selected predetermined interval [a 0 , b 0 ], of course, only It is also within the scope of the present invention that Ki or Kd is set to zero when the D value falls within the interval [a 0 , b 0 ] or the interval [a' 0 , b' 0 ], respectively.

如果在濃度差值P較大的情況下(通常為蝕刻初期),表示濃度的變化趨勢的時間微分D值通常也會增加(因補藥量大使濃度變化大),這時可設定當D值落於一區間[a,b]或未落於一區間[a1 ,b1 ]內時,Kd為一負值,連帶使得比例微分值Kd×D成為較大的負值,可壓抑補藥過量的問題,一旦濃度進入穩定狀態,即濃度變化量小(D變小),則比例微分值Kd×D的影響相對變小。If the concentration difference P is large (usually the initial stage of etching), the time differential D value indicating the change trend of the concentration will usually increase (due to the large amount of the drug to make the concentration change), then the D value can be set to fall. When an interval [a, b] or does not fall within an interval [a 1 , b 1 ], Kd is a negative value, which causes the proportional differential value Kd × D to become a large negative value, which can suppress the problem of overdose. Once the concentration enters a steady state, that is, the amount of change in concentration is small (D becomes small), the influence of the proportional differential value Kd×D is relatively small.

當然,除了微分係數Kd外,積分係數Ki也可以根據D值做出相應的變化設定。由於以本案方法在進行蝕刻製程時,在蝕刻液濃度逐漸趨於穩定值後,目標濃度會值與量測濃度值產生一個固定偏差。因此還可針對Ki值做變化條件的設定。例如可針對特定狀況,在蝕刻初期積分控制還不需要運作時,或蝕刻液濃度逐漸趨於穩定時,或蝕刻製程持續過 長時間,導致管路阻塞程度逐漸嚴重時,分別針對D值設定一第一區間[a2 ,b2 ]與第二區間[a3 ,b3 ],使D值在落於該第一區間內時Ki為一第一定值,落於該第二區間時Ki為一第二定值,未落於該第一區間與該第二區間時則Ki為零,以三種可變的Ki值來因應上述的三種狀況。Of course, in addition to the differential coefficient Kd, the integral coefficient Ki can also be set according to the D value. Due to the etching process in the present method, after the concentration of the etching solution gradually reaches a stable value, the target concentration value and the measured concentration value produce a fixed deviation. Therefore, the setting of the change condition can also be made for the Ki value. For example, for a specific situation, when the integral control does not need to be operated at the initial stage of etching, or when the concentration of the etching solution is gradually stabilized, or the etching process continues for a long time, causing the pipe blockage degree to become serious, respectively, setting one for the D value. The first interval [a 2 , b 2 ] and the second interval [a 3 , b 3 ], such that when the D value falls within the first interval, Ki is a first constant value, and when the second interval falls, Ki For a second fixed value, Ki is zero when it does not fall within the first interval and the second interval, and the three kinds of conditions described above are determined by three variable Ki values.

請參閱第三圖,其為本案提出的蝕刻液濃度控制方法的一實施例的控酸狀況折線圖。依據本案所提出的蝕刻液濃度控制方法,設定前兩次控酸的Kp=0.5、Ki=0、Kd=0,從第三次控酸後設定Kd=-0.25,且當D小於0.01時Ki=0.25;D超過0.01時Ki=0。至於目標濃度則設定為1.79%,蝕刻液初始濃度為1.60%。在第三圖中,左側Y座標為控酸後的濃度,右側Y座標為補酸量,該補酸量若為0.1,則代表添加的補酸量可使藥液濃度增加0.1%的濃度。其控酸結果如第三圖所示,由第三圖可知在蝕刻液消耗速率不變的前提下,蝕刻液濃度會逐漸趨於穩定。Please refer to the third figure, which is a line diagram of the acid control state of an embodiment of the etching liquid concentration control method proposed in the present invention. According to the etching liquid concentration control method proposed in the present case, Kp=0.5, Ki=0, Kd=0 of the first two acid-controlling acids are set, Kd=-0.25 is set from the third acid control, and Ki is less than 0.01 when D is less than 0.01. = 0.25; when the value exceeds 0.01, Ki=0. The target concentration was set to 1.79%, and the initial concentration of the etching solution was 1.60%. In the third figure, the Y coordinate on the left side is the concentration after acid control, and the Y coordinate on the right side is the acid supplement amount. If the acid supplement amount is 0.1, it means that the added acid amount can increase the concentration of the chemical solution by 0.1%. The acid control result is shown in the third figure. From the third figure, the concentration of the etching solution will gradually stabilize under the premise that the etching liquid consumption rate is constant.

經由以上所揭露的技術內容,當依本發明所揭露的方法進行蝕刻液的濃度控制時,需要在製程中持續測量蝕刻液濃度,然後根據測量的濃度值與使用者期望的理想濃度值的差異,進行積分、微分以及比例化等計算方式得到酸鹼藥液的補充量以進行補藥維持蝕刻液濃度。由於本發明隨時監控濃度變化,且能隨濃度變化狀況調整計算公式的相關參數,因此能即時提供回饋控制資訊,使藥液準確且持續地補充,維持蝕刻液濃度的穩定。本發明具有提高生產效能與產品品質的優點。According to the technical content disclosed above, when the concentration of the etching liquid is controlled according to the method disclosed by the present invention, it is necessary to continuously measure the concentration of the etching liquid in the process, and then according to the difference between the measured concentration value and the ideal concentration value desired by the user. The calculation method of integration, differentiation, and proportionalization is performed to obtain a supplement amount of the acid-base liquid solution to perform the medicine to maintain the concentration of the etching liquid. Since the present invention monitors the concentration change at any time, and can adjust the relevant parameters of the calculation formula according to the concentration change condition, the feedback control information can be provided immediately, so that the liquid medicine can be accurately and continuously replenished, and the concentration of the etching liquid is stabilized. The invention has the advantages of improving production efficiency and product quality.

本案實為一難得一見,值得珍惜的罕見發明,惟以上所述者,僅為本發明的最佳實施例而已,當不能用以限定本發明所實施的範圍。即大凡依本發明申請專利範圍所作的均等變化與修飾,皆應仍屬於本發明專利涵蓋之範圍內,謹請 貴審查委員明鑑,並祈惠准,是所至禱。The present invention is a rare and inconspicuous invention, and the above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the invention. That is, the equal changes and modifications made by the applicant in accordance with the scope of the patent application of the present invention should still fall within the scope covered by the patent of the present invention. I would like to ask your review committee to give a clear explanation and pray for it.

1‧‧‧蝕刻機側1‧‧‧ etching machine side

2‧‧‧濃度分析及控制側2‧‧‧Concentration analysis and control side

10‧‧‧蝕刻液槽10‧‧‧etching tank

11‧‧‧循環泵浦11‧‧‧Circulating pump

12‧‧‧循環管路12‧‧‧Circulation pipeline

20‧‧‧藥液桶20‧‧‧ drug liquid barrel

21‧‧‧加藥機21‧‧‧Dosing machine

22‧‧‧分析儀22‧‧‧Analyzer

23‧‧‧分析管路23‧‧‧Analysis pipeline

24‧‧‧控制管路24‧‧‧Control line

P‧‧‧差值P‧‧‧ difference

I‧‧‧時間積分值I‧‧‧ time integral value

D‧‧‧時間微分值D‧‧‧ time differential value

Kp‧‧‧比例係數Kp‧‧‧ scale factor

Ki‧‧‧積分係數Ki‧‧· integral coefficient

Kd‧‧‧微分係數Kd‧‧‧ differential coefficient

U‧‧‧補藥量U‧‧‧Replenishment

第一圖:本發明蝕刻液濃度控制方法所搭配的蝕刻液濃度分析及控制裝置示意圖;第二圖:本發明蝕刻液濃度控制方法的一實施例的流程圖;及第三圖:本發明蝕刻液濃度控制方法的一實施例的控酸狀況折線圖。First: a schematic diagram of an etchant concentration analysis and control device matched with the etchant concentration control method of the present invention; a second diagram: a flow chart of an embodiment of the etchant concentration control method of the present invention; and a third diagram: etching of the present invention A line diagram of the acid control state of an embodiment of the liquid concentration control method.

P‧‧‧差值P‧‧‧ difference

I‧‧‧時間積分值I‧‧‧ time integral value

D‧‧‧時間微分值D‧‧‧ time differential value

Kp‧‧‧比例係數Kp‧‧‧ scale factor

Ki‧‧‧積分係數Ki‧‧· integral coefficient

Kd‧‧‧微分係數Kd‧‧‧ differential coefficient

U‧‧‧補藥量U‧‧‧Replenishment

Claims (24)

一種蝕刻液濃度控制方法,其步驟包括:設定一蝕刻液的一目標濃度值;測量該蝕刻液得到一量測濃度值;根據該目標濃度值與該量測濃度值,而計算出一差值;比例化該差值而得一比例值;比例化該差值的一時間積分值而得一比例積分值;比例化該差值的一時間微分值而得一比例微分值;及根據該比例值、該比例積分值及該比例微分值,補充該蝕刻液濃度至該目標濃度值。An etchant concentration control method, the method comprising: setting a target concentration value of an etchant; measuring the etchant to obtain a measured concentration value; and calculating a difference according to the target concentration value and the measured concentration value Diluting the difference to obtain a proportional value; scaling a time integral value of the difference to obtain a proportional integral value; scaling a time differential value of the difference to obtain a proportional differential value; and according to the ratio The value, the proportional integral value, and the proportional differential value complement the etchant concentration to the target concentration value. 如申請專利範圍第1項所述的方法,其步驟更包括:採用一離子層析法、一滴定法以及一光譜分析法任選其一的方式測量蝕刻液濃度。The method of claim 1, wherein the method further comprises: measuring the concentration of the etching solution by using one of ion chromatography, one titration, and one spectral analysis. 如申請專利範圍第2項所述的方法,其中該滴定法以微泵(micropump)自該蝕刻液中抽取一蝕刻液樣本。The method of claim 2, wherein the titration method extracts an etchant sample from the etchant by a micropump. 如申請專利範圍第3項所述的方法,其步驟更包括:從丙二醇、甘油、異丙醇所成群組中選出一稀釋液,以稀釋該蝕刻液樣本。The method of claim 3, wherein the step further comprises: selecting a diluent from the group consisting of propylene glycol, glycerin, and isopropyl alcohol to dilute the etchant sample. 如申請專利範圍第1項所述的方法,其步驟更包括:當該時間微分值落於一第一範圍時,則該比例積分值是零。The method of claim 1, wherein the step further comprises: when the time differential value falls within a first range, the proportional integral value is zero. 如申請專利範圍第1項所述的方法,其步驟更包括:當該時間微分值落於一第二範圍時,則該比例微分值是零。The method of claim 1, wherein the step further comprises: when the time differential value falls within a second range, the proportional differential value is zero. 如申請專利範圍第1項所述的方法,其步驟更包括:當該時間微分值落於一第三範圍時,則該比例微分值是負值。The method of claim 1, wherein the step further comprises: when the time differential value falls within a third range, the proportional differential value is a negative value. 如申請專利範圍第1項所述的方法,該蝕刻液選自氫氧化 鈉、氫氧化鉀、氨所成群組。The method of claim 1, wherein the etching solution is selected from the group consisting of hydrogen peroxide Sodium, potassium hydroxide, and ammonia are grouped together. 如申請專利範圍第1項所述的方法,該蝕刻液選自鹽酸、氫氟酸、硝酸、醋酸、磷酸、硫酸所成群組。The method of claim 1, wherein the etching solution is selected from the group consisting of hydrochloric acid, hydrofluoric acid, nitric acid, acetic acid, phosphoric acid, and sulfuric acid. 如申請專利範圍第1項的方法,其步驟更包括:當該目標濃度值大於該量測濃度值時,則根據該差值增加該蝕刻液濃度至該目標濃度值。The method of claim 1, wherein the step further comprises: increasing the concentration of the etching solution to the target concentration value according to the difference when the target concentration value is greater than the measured concentration value. 如申請專利範圍第1項的方法,其步驟更包括:當該目標濃度值小於該量測濃度值時,則根據該差值減少該蝕刻液濃度至該目標濃度值。The method of claim 1, wherein the step further comprises: decreasing the concentration of the etching solution to the target concentration value according to the difference when the target concentration value is less than the measured concentration value. 一種蝕刻液濃度控制方法,其步驟包括:監控一蝕刻液的一濃度變化值;比例化該濃度變化值而得一比例值;比例化該濃度變化值的一時間積分值而得一比例積分值;比例化該濃度變化值的一時間微分值而得一比例微分值;及根據該比例值、該比例積分值及該比例微分值,補充該蝕刻液。An etchant concentration control method, the method comprising: monitoring a concentration change value of an etchant; scaling the concentration change value to obtain a proportional value; and proportionalizing the time change value of the concentration change value to obtain a proportional integral value And proportionalizing a time differential value of the concentration change value to obtain a proportional differential value; and supplementing the etching liquid according to the proportional value, the proportional integral value, and the proportional differential value. 如申請專利範圍第12項所述的方法,其步驟更包括:設定該蝕刻液的一第一濃度值,測量該蝕刻液得到一第二濃度值,並根據該第一濃度值與該第二濃度值,得到該濃度變化值。The method of claim 12, the method further comprising: setting a first concentration value of the etching liquid, measuring the etching liquid to obtain a second concentration value, and according to the first concentration value and the second The concentration value is obtained to obtain the concentration change value. 如申請專利範圍第13項所述的方法,其步驟更包括:採用一離子層析法、一滴定法以及一光譜分析法任選其一的方式測量蝕刻液濃度。The method of claim 13, wherein the step further comprises: measuring the concentration of the etching solution by one of ion chromatography, one titration, and one spectrometry. 如申請專利範圍第14項所述的方法,其中該滴定法以微泵(micropump)自該蝕刻液中抽取一蝕刻液樣本。The method of claim 14, wherein the titration method extracts an etchant sample from the etchant by a micropump. 如申請專利範圍第15項所述的方法,其步驟更包括:從丙二醇、甘油、異丙醇所成群組中選出一稀釋液,以稀釋該蝕刻液樣本。 The method of claim 15, wherein the step further comprises: selecting a diluent from the group consisting of propylene glycol, glycerin, and isopropyl alcohol to dilute the etchant sample. 如申請專利範圍第12項所述的方法,其步驟更包括:當該時間微分值落於一第一範圍時,則該比例積分值是零。 The method of claim 12, wherein the step further comprises: when the time differential value falls within a first range, the proportional integral value is zero. 如申請專利範圍第12項所述的方法,其步驟更包括:當該時間微分值落於一第二範圍時,則該比例微分值是零。 The method of claim 12, wherein the step further comprises: when the time differential value falls within a second range, the proportional differential value is zero. 如申請專利範圍第12項所述的方法,其步驟更包括:當該時間微分值落於一第三範圍時,則該比例微分值是負值。 The method of claim 12, wherein the step further comprises: when the time differential value falls within a third range, the proportional differential value is a negative value. 如申請專利範圍第12項所述的方法,該蝕刻液選自氫氧化鈉、氫氧化鉀、氨所成群組。 The method of claim 12, wherein the etching solution is selected from the group consisting of sodium hydroxide, potassium hydroxide, and ammonia. 如申請專利範圍第12項所述的方法,該蝕刻液選自鹽酸、氫氟酸、硝酸、醋酸、磷酸、硫酸所成群組。 The method of claim 12, wherein the etching solution is selected from the group consisting of hydrochloric acid, hydrofluoric acid, nitric acid, acetic acid, phosphoric acid, and sulfuric acid. 如申請專利範圍第12項所述的方法,其中該比例值是該濃度變化值與一第一定數的乘積,該比例積分值是該時間積分值與一第二定數的乘積,該比例微分值是該時間微分值與一第三定數的乘積。 The method of claim 12, wherein the proportional value is a product of the concentration change value and a first fixed number, and the proportional integral value is a product of the time integral value and a second fixed number, the ratio The differential value is the product of the time differential value and a third fixed number. 一種蝕刻液濃度控制的裝置,包括:一蝕刻液槽,用於儲存一蝕刻液;一分析儀,用於監控該蝕刻液槽中該蝕刻液的一濃度變化值、比例化該濃度變化值而得一比例值、比例化該濃度變化值的一時間積分值而得一比例積分值以及比例化該濃度變化值的一時間微分值而得一比例微分值;一藥液桶,用於儲存一補充該蝕刻液槽內該蝕刻液的藥液;一加藥機,根據該分析儀所分析之該比例值、該比例積分值 及該比例微分值,從藥液桶中取出適量的該藥液補充至該蝕刻液槽中;以及一循環管路,提供一通道以使該蝕刻液透過一幫浦導入該分析儀中,或該藥液補充至該蝕刻液槽內。 An apparatus for controlling concentration of an etching solution, comprising: an etching liquid tank for storing an etching liquid; and an analyzer for monitoring a concentration change value of the etching liquid in the etching liquid tank and proportionalizing the concentration change value Obtaining a proportional value, proportionalizing a time integral value of the concentration change value to obtain a proportional integral value, and proportionalizing a time differential value of the concentration change value to obtain a proportional differential value; a liquid medicine barrel for storing one a liquid medicine for supplementing the etching liquid in the etching liquid tank; a dosing machine, the proportional value and the proportional integral value analyzed according to the analyzer And the proportional differential value, an appropriate amount of the chemical solution is taken out from the liquid medicine tank to be added to the etching liquid tank; and a circulation line is provided to provide a passage for the etching liquid to be introduced into the analyzer through a pump, or The liquid is replenished into the etching solution tank. 如申請專利範圍第23項所述的裝置,其中該藥液係一鹽酸、一氫氟酸、一硝酸、一醋酸、一磷酸、一硫酸、一氫氧化鈉、一氫氧化鉀、一氨及其組合其中之一。 The apparatus of claim 23, wherein the liquid is hydrochloric acid, hydrofluoric acid, mono nitric acid, monoacetic acid, monophosphoric acid, monosulfuric acid, monosodium hydroxide, potassium hydroxide, monoamine, and One of its combinations.
TW97138312A 2008-10-03 2008-10-03 Method for controlling etchant concentration TWI383446B (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030209514A1 (en) * 1997-04-04 2003-11-13 Infineon Technologies North America Corp. Etching composition and use thereof with feedback control of HF in BEOL clean
US20070134825A1 (en) * 2005-12-13 2007-06-14 Industrial Technology Research Institute Non-mask micro-flow etching process
TWI297517B (en) * 2005-06-03 2008-06-01

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030209514A1 (en) * 1997-04-04 2003-11-13 Infineon Technologies North America Corp. Etching composition and use thereof with feedback control of HF in BEOL clean
TWI297517B (en) * 2005-06-03 2008-06-01
US20070134825A1 (en) * 2005-12-13 2007-06-14 Industrial Technology Research Institute Non-mask micro-flow etching process

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