TWI379423B - Thin film solar cell module of see-through type and method of fabricating the same - Google Patents

Description

1379423 P63960018TW 2623 8twf.doc/n IX. Description of the Invention: [Technical Field] The present invention relates to a solar photovoltaic module and a method of manufacturing the same, and more particularly to a light-transmitting film Solar cell* module and its manufacturing method. [Prior Art] _ Solar energy is an energy source that never runs out and is free of pollution. It has always been the focus of attention when solving the problems of pollution and shortage faced by petrochemical energy. Among them, the solar cell can directly convert solar energy into electrical energy, which has become a very important research topic at present. At present, in the solar cell market, the use of single crystal stone and polycrystalline stone batteries accounted for more than 90%. However, these solar cells require the use of a dream wafer having a residence temperature of about 150 to 350 micrometers as a material, which is costly. Furthermore, since the raw materials of solar cells are made of high-quality twin crystal ingots, they have become increasingly scarce in recent years due to the apparent growth in usage. Therefore, the development of thin film so丨ar cells has become a new development direction. Moreover, the thin film solar cell has the advantages of low cost, easy large-area production, and simple modular process. • _: Reference® is a diagram of a conventional thin film solar cell module. The thin film solar cell module 15A includes a glass substrate 152, a transparent electrode 154, a photoelectric conversion layer 156, and a metal electrode 158. Among them, the moon-transparent electrode 1M is disposed on the glass substrate (7). The photoelectric conversion layer (5) is disposed on the transparent electric 5 1379423 P63960018TW 26238twf.doc/n pole 154 in such a manner that X corresponds to the positional offset-distance of the flip electrode 154. Further, the metal electrode 158 is disposed on the photoelectric conversion layer 156 so as to be offset by a distance corresponding to the position of the photoelectric conversion layer i56, and is in contact with the lower transparent electrode 154. In the thin film solar cell module 15 ,, the photoelectric conversion layer is generally formed of a p+ semiconductor, an intrinsic semiconductor, and an n-type semiconductor stack to form a P+n structure, and the light is incident from the lower side of the glass substrate 152, and is photoelectrically converted. The layer 156 absorbs electrons and holes, and separates the electrons from the hole pair via the built-in electric field to form a voltage and electric φ stream, which is then transmitted to the load via the wire. In order to improve the efficiency of the battery, the conventional thin film solar cell module 15 制成 makes the surface of the transparent electrode 154 into a pyramid structure or a textured structure (not shown) to reduce the amount of light reflection. . The photoelectric conversion layer usually uses an amorphous tantalum film 'but because its energy gap is usually between 17 and 18 eV, it can only absorb sunlight with a wavelength less than gOOnm. In order to increase the utilization of light, it is usually stacked again. Crystalline (miCr〇_Crystalline 〇Γ nano-crystalline) broken film, forming a p_i_n/p small n stacked type (tandem) solar cell 'microcrystalline 矽 energy gap usually between 丨.1 to 1.2 eV, Lu can Absorbs sunlight with a wavelength less than llOOnm. In the early days, solar cells were expensive and difficult to manufacture, and they could only be used in the field of space waiting. Nowadays, the application of solar cells can be extended to ordinary residential buildings, high-rise buildings, even campers and mobile small refrigerators, and can be used to convert sunlight into electric energy. However, in some specific applications, germanium wafer solar cells are not suitable for applications such as glass curtains that require light transmission, and other integrated building photovoltaic (BIPV) applications. 6 1379423 P63960018TW 26238twf.d〇c/n thin film solar cell of see-through type has the advantages of energy saving and aesthetics in these applications, and is more in line with the needs of human habitation. A Currently, related art for a light-transmitting type thin film solar cell and a method of manufacturing the same are disclosed in some U.S. patents.

A partially transparent solar cell module (PARTIALLY TRANSPARENT PHOTOVOLATIC MODULES) is proposed in U.S. Patent No. 6,858,461 (U.S. Patent No. 6,858,461, filed on Jan. 2). As shown in FIG. 2, the solar cell module 110 includes a transparent substrate 114 and is transparently conductive. The layer U8, the back electrode 122, and the photoelectric conversion layer between the transparent conductive layer 118 and the metal electrode 122. Similarly, the light is irradiated from below the transparent substrate. In the solar cell module 110, laser cutting is utilized ( Laser scribing) removes part of the metal electrode 22 and the photoelectric conversion layer to form at least one groove 14 〇 so that the solar cell module 110 can achieve partial light transmission. However, since the laser cutting method is It is carried out at a high temperature, so that it is easy for the metal electrode 122 to generate metal particles or smelt and accumulate inside the trench, causing the upper and lower electrodes to be short-circuited (sh〇rt); or the amorphous germanium photoelectric conversion layer is generated at the sidewall of the trench at a high temperature. Crystallization, the formation of low-resistance microcrystalline germanium, which increases the leakage current, which in turn affects the yield and solar cell efficiency. On the other hand, a pyramid-shaped structure or a rough-textured surface structure is usually formed on the surface of the transparent conductive layer, and the efficiency of the battery is increased by θ, so that when the light is irradiated from below the transparent substrate 114, scattering occurs, so that light is transmitted. The rate has not been effectively improved. According to the above, in order to achieve a certain degree of light transmittance of the solar cell, 7 1379423 P6396001STW 26238twf.d〇c/n Γ, need to change the f pole and photoelectric_layer _ divided. Please refer to the table 1 1 is a variety of light transmission type of M本 MakMax TAIY0 K0GY0 company. It can be seen from Table 1 'In order to improve the light transmittance, it is very difficult to remove the metal electrode electric shock conversion layer from a considerable area to maximize the output and efficiency. And fill the coefficient (fill, F will be 〇

Table 1 Model KN-38 _ KN-45 KN-60 Size (mm) 980X950 980X950 980X950 Transmittance (%) 10 5 <1 Maximum output (W) 3B.0 45.0 58.0 Vpm (V) 5B.6 64.4 68.0 Ipm (A) 0.648 0.699 0.853 Voc (V) 91.8 91.8 91.8 Isc (A) 0.972 1.090 1.140 Efficiency (%) 4.1 4.8 6.2 FF 0.43 0.45 0.55

In addition, a solar cell element ('1>1101'0乂01^1[1€0£¥10£") is proposed in U.S. Patent No. 4,795,500 (U.S. Patent No. 4,795,500). As shown in Fig. 3, the solar cell element includes a transparent substrate. 1. Transparent conductive layer 3, photoelectric conversion layer 4, metal electrode 5 and photoresist 8. This solar cell element is in metal electrode 5 and photoelectric conversion layer 4, or even included in transparent conductive layer 3 8 1379423 P639600 i 8TW 26238twf. In doc/n, a hole 0 is formed to achieve the purpose of light transmission. However, this benefit requires the use of a yellow light process, and the related equipment is quite blame, so that it will increase ί二H, if the patent is thunder The direct cutting method of the hole cutting method will also cause metal particle contamination and short circuit _, which will affect the process yield. 曰 [Summary of the Invention] In view of the above, the object of the present invention is to provide a transparent battery. And the method of making money, (4) improving the light transmission of the electric ray group and avoiding the problems of short circuit and leakage current caused by the process, and thus improving the process yield and solar cell efficiency. Out-sight type _ field energy transfer Manufacturing =. First, not Forming a first electrode material layer on the substrate. Then, a portion of the first electrode material layer is formed to form a plurality of first-turn direction dicing electrodes of the first electrode material layer and the separator electrode material layer: Two-dimensional arrangement = first-ray: Lr electrical conversion layer 'covers opaque substrate, layer, Π-type electrode. Then 'remove part of the photoelectric conversion 曰 to form a plurality of parallel first-pole surfaces above the first electrode 3 9 1379423 P63960018TW 26238twf.doc/n The second X-direction cutting channel exposes the opaque substrate, and the pole material layer is divided into a second comb-shaped electrode and a plurality of two-dimensional arrays, and the red electrode is removed. The opaque substrate exposed in the two X-direction dicing streets and the 2Y-direction dicing streets to form a plurality of holes in the opaque substrate. ^ The manufacturing method I of the above-mentioned light-transmitting thin film solar cell module is to remove part of the green conversion layer When the second 丫 direction scribe line is formed, a plurality of third X-direction dicing streets are formed in the ninth-direction scribe line. The first, second, third 丫 direction cutting lanes and the first, second, and ςX directions The first electrode material layer of the above-mentioned light-type thin film solar cell module is a transparent conductive material layer, and the material thereof is, for example, zinc oxide, tin dioxide, indium oxide. Tin or indium oxide. The first electrode material layer may also be a metal layer, the material of which is = metal, copper, copper, other suitable metal or alloy. Photoelectric conversion t-single layer structure or - stacked layer structure. The material of the layer is, for example, a non-crystalline Weiqi alloy, a sulfided crane, a copper indium gallium dichloride, a copper steel two-code, a ruthenium or a money material. The second electrode material layer is a transparent conductive layer, and the material thereof is, for example, oxidized. Zinc, tin dioxide, indium tin oxide or oxidized steel 0 The present invention further proposes a light-transmissive thin film solar cell module in which a plurality of cells connected in series are arranged on an opaque substrate. There are a plurality of holes extending through the opaque substrate between the mine cells. The light-transmissive thin solar cell includes a first electrode, a second electrode, and photoelectric conversion sound. Wherein, the first electrode is disposed on the opaque substrate and the first electrode is: 1379423 P63960018TW 26238twf.doc/n - the comb electrode and the plurality of electrodes arranged in two dimensions are disposed above the first electrode.弟二电--She 妯 丨 々 々 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二The opaque substrate of the electric: speed W blade or the hole-comb-type electrode is disposed in a left-right manner, and the electrode and the block electrode are parallel-displaced square-cut electrodes and second to the first electrode With the second electrode; Photoelectric:: Layer configuration A plurality of layers of photoelectric conversion materials. θ疋一, .. 卜列的透明光光frequency_第—electrode is — The material is, for example, zinc oxide, tin dioxide, indium tin oxide or germanium indium. The first pole can also be ― , milk, copper, or other suitable metal or combination:. ;Electric;: Heap == material of the electrical conversion layer such as 3 / Han, σ gold cadmium sulfide, copper indium gallium diselenide, ::=::Γ, the second electrode is -Tor For example, bismuth zinc oxide, tin dioxide, indium tin oxide or oxidized manufacturing, m light-transmissive film (four) energy battery module "square 纟 first, on the opaque substrate to form the first electrode material screen. Then, shift Except for a portion of the first electrode material layer to form a plurality of first γ-squares==channels that can separate the tantalum layer into a plurality of strip-shaped electrode material layers, and a plurality of first-direction directional cutting windows in a two-dimensional arrangement^ The electrode material layer becomes a plurality of first window electrodes. Then, photoelectricity is formed = 1374432

The P63960018TW 26238twf.doc/n layer covers the first-window type electrode and the opaque substrate photoelectric conversion layer to form a plurality of second γ-direction dicing streets of the 4-flat 3-gas direction scribe line above the first window type electrode. Thereafter, a second electrode lion layer is formed on the layer. Then, the portion of the first pole is removed to form a track exposing the surface of the first window electrode, and the shape of the second window material is made into a plurality of bare paths in the first-to-x direction cutting window. The second g-type electrode of the substrate is not produced. After that, move the two-way cutting window to the exposed county board to

A plurality of holes are formed. In the above method for manufacturing a light-transmitting thin film solar cell module, a part of the wire turns is removed to form the (four) two-way cutting path, which can be formed in the first x-direction cutting window. The third direction is the cutting window. In the above-described method for manufacturing a light-transmissive thin film solar cell module, the first and second gamma-direction dicing streets and the first, second, and third X directions, the slitting window D is prepared by a laser cutting method. Further, the first electrode material layer of the light-transmitting solar cell module is a transparent conductive material, and the material layer is made of, for example, oxidized, tin dioxide, indium tin oxide or indium oxide. The first electrode material layer may also be a metal layer made of, for example, silver, copper, molybdenum or other suitable metal or alloy. Photoelectric conversion, which is an early layer structure or a stacked layer structure. The material of the photoelectric conversion layer is 疋, 纟, 纟. s day 10 and its alloy, sulfurized money, copper indium gallium two touch, copper indium dilithisite, antimony tin or organic materials. The second electrode material layer is - transparent conductive oxide 12 1379423 P63960018TW 26238twf.doc / n layer ' ί: quality examples (four) zinc oxide, tin dioxide, indium tin oxide or indium oxide in the light-transmissive thin film solar cell module Most of the '(10)#, which are straight and connected in series and in parallel with each other, are pierced through the through holes of the opaque substrate. The transparent pool module includes an opaque substrate, a first electrode, a first electricity, and a photoelectric conversion layer. Wherein, the opaque substrate has a = 2 block on the t=rr substrate, and the first electrode has a plurality of first-cut windows D from a plurality of portions. The second electrode is configured to be a multi-matrix second _ pole group, and the first 19 electrode has a plurality of second I = 3, 7 cut positions _ _ and constitute the aforementioned compliant i-electrode The first and the window-shaped electrodes are arranged in a parallel displacement manner. Further, the photoelectric conversion layer is disposed between the first electrodes. The = turn = layer is composed of a plurality of window-shaped photoelectric conversion material layers. The transparent solar cell module (4)—the electrode is a month of electro-oxidation _, and the material f is, for example, zinc oxide or m. The electrode can also be - metal = two = the metal or alloy it is suitable for. Photoelectric conversion layer structure. The material of the photoelectric conversion layer is, for example, =, , , . The alloy of the alloy, the vulcanized money, the steel indium gallium, the indium, the second electrode is the transparent conductive telluride layer, such as helium gas, tin dioxide, indium tin oxide or antimony. 13 Π 79423 P63960018TW 26238twf.d〇c/n The light-transmissive thin film solar cell module of the present invention and the method thereof have simultaneously formed two-direction dicing streets or _windows at the time of fabricating the first electrode, thus enabling (4) The light-transmissive (four) film solar cell module will have a (four) temperature laser _ remaining and cause short circuit and problem, which can improve process yield and solar cell efficiency. In addition, the light-transmissive type solar cell module of the present invention has a through-hole that penetrates through the county plate, and is transparent to the surface of the transparent oxygen (four) electrode. Light scattering, this can be a secret to (4) through the solution. ^ See below. The secret is St. ί上? and other purposes, features and advantages can be more obvious. The ox car is better than the example, and with the accompanying drawings, the detailed description [Embodiment] 9 is drawn according to the embodiment of the present invention.透明 透光 太 I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I Diagram of the top view, subgraph (8) not > mouth. _ 面 面 ΙΙ ΙΙ ΙΙ ΙΙ 剖面 剖面 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 The W 4 film solar cell module is completely composed of a plurality of cells 401 connected in series with each other. The human, r 470, the photoelectric conversion layer 414 and the battery 401 are arranged in an array by the first electrodes. Columns and columns A plurality of batteries: 〇, 成. These batteries 401 between the squadrons 401 are separated by X-direction cutting lanes 1379423 P63960018TW 26238twf.doc/n 422, 408; between rows and rows of batteries 4〇1 The gamma-direction dicing streets 420 are separated from the Υ-direction dicing streets 406. In other words, the 'X-direction dicing streets 408, 422 can separate the first electrode 470 and the second electrode 480 into a series. The opaque substrate 4 〇 2 is exposed. The γ-direction scribe line 420 separates the second electrode 480 into a plurality of rows, which expose a portion of the first electrode 470 and a portion of the opaque substrate 402. The Υ-direction scribe line 406 then the first electrode The 470 is divided into rows to expose the opaque substrate 402. And the opaque substrate 402 exposed by the X-direction scribe line 422 and the Υ-direction scribe line 420 has a plurality of holes 450 extending through the two surfaces 402a and 402b thereof. More specifically The light-transmissive thin film solar cell module 4 includes an opaque substrate 402 and a first electrode 470 disposed thereon, a photoelectric conversion layer 414 and a second electrode 480. The first electrode 470 is directly disposed on the opaque substrate. 402, which is composed of a comb-shaped electrode 412 cut by the X-cutting lane 408 and the Y-direction cutting lane 406 and a plurality of block electrodes 410 arranged in two dimensions. The material of the first electrode 470 is a transparent conductive oxide. Thin film or metal layer. The material of TCO is, for example, zinc oxide (ZnO), tin dioxide (Sn〇2), indium tin oxide (no) or indium oxide (In2〇3). The material of the metal layer is, for example, aluminum (A1). ),silver( Ag), molybdenum (Mo), copper (Cu) or other suitable metal or alloy. The second electrode 480 is disposed above the first electrode 470, which is cut by the X-cutting lane 422 and the Y-direction cutting lane 422. The comb-shaped electrode 426 is composed of a plurality of block electrodes 424 arranged in two dimensions. Moreover, the comb-shaped electrodes 412 and 426 are arranged in a left-right manner, and the block electrodes 41〇, 424 15 1379423 P63960018TW 26238twf.doc/n are Parallel displacement mode configuration. The second electrode 48 is an oxide film. The material of the TCO is, for example, zinc oxide indium tin (ITO) or indium oxide (ιη2〇3). Further, the light-changing layer 414 is disposed between the first electrode strips and the photoelectric conversion layer 414 is composed of a two-dimensionally arranged conversion material layer. The photoelectric conversion layer 414 can

Laminated structure. The material of the photoelectric conversion layer 414 is, for example, non-gold, ruthenium (CdS), copper indium gallium two (CuInGaSe2, CIGS), steel bismuth (cuInSe2 'CIS), cadastral (CdTe), organic material or the like. Stacked multilayer structure.

The material is transparent conductive, tin dioxide, and oxidation. In the above dicing street, the γ-direction dicing street 406 for dividing the first electrode 470 is covered by the photoelectric conversion layer 414 and the second electrode 48A. The meandering scribe line 420 for dividing the second electrode 480 exposes a portion of the first electrode 470 and the opaque substrate 402. The position of the X-direction scribe line 408 for dividing the first electrode 470 and the γ-direction scribe line 422 for dividing the second electrode 48A correspond to and expose the opaque substrate 402. It is particularly noteworthy that in the present invention, the X-direction dicing streets 422, 4〇6 and the Υ-direction dicing streets 420 not only expose the opaque substrate 402, but also have a plurality of opaque substrates 402 extending through the two surfaces. Holes 450 of 402a and 402b. The dimensions of the holes 440 in the surface 402a of the opaque substrate 402 may be the same as or different from the dimensions of the surface 402b. For example, the size of the holes 440 may be gradually increased from the surface 402a of the opaque substrate 402 to the surface 402b, or may become smaller. In addition, 1379423 P63960018TW 26238twf.doc/n The pattern of the holes 44〇 on the opaque substrate 402 is not otherwise limited. The patterns on the surfaces 402a and 402b of the opaque substrate 402 can assume various shapes such as a circle, a square, and a rectangle. , triangles, polygons, etc., or • are irregular. The light transmissive thin film solar cell module 400 of the present embodiment has X-direction dicing streets 422, 4〇6 and Y-direction dicing streets 420 that expose the opaque substrate 402 and has a plurality of holes in the opaque substrate 4〇2. Swollen... φ Therefore, when light (sunlight) is irradiated from the second electrode 480 above the surface 402a of the opaque substrate 402, the holes in the χ-direction cutting path 422 and the γ-square=cutting path 420 and the opaque substrate 4〇2 can be passed. The light-emitting thin film solar cell module 400 achieves higher light transmission characteristics. Compared with the light-transmissive solar cell module, the light-transmitting thin film solar cell module 400 of the present embodiment can greatly improve the light transmittance of the device. On the other hand, as shown in FIG. 9(c), since the first electrode is covered by the photoelectric conversion layer 414' thus forming the χ-direction dicing street 422, the high-temperature #射-cutting process does not cause the second electrode. The resulting residue is in contact with the first electrode, which in turn causes a short circuit (sh〇rt) problem; or the amorphous austenite photoelectric conversion layer recrystallizes at the sidewall of the trench at a high temperature to form a low-resistance crystallite. This increases the leakage current, which in turn affects the yield of the process and the efficiency of the solar cell. Hereinafter, a method of manufacturing the light-transmitting thin film solar cell module 400 of the present embodiment will be described in detail with reference to Figs. 4 to 9 . First, please refer to Fig. 4(a) and Fig. 4(b)' to provide an opaque substrate 402. The material of the opaque substrate 4〇2 is, for example, a metal thin plate, a plastic base 17 1379423 P63960018TW 26238 twf.doc/n plate, a Tao Jing substrate or other suitable opaque material. Or other transparent material. Then 'on the opaque substrate, the side is formed. The electrode material layer is completely transparent conductive oxide & metal layer. The material of TCO is, for example, oxidized (Zn〇), two ^^

(SnCy, oxidized sulphur tin (IT0) or indium oxide (the material of the Ιη2〇3^ metal layer is, for example, aluminum (Α1), silver (Ag), molybdenum (Mo), copper (Cu) or other suitable metal or alloy. The method of forming the electrode material layer 404 can be prepared, for example, by a chemical vapor deposition method (CVD method), a sputtering method, or other suitable method. Eight degrees Of course, in order to improve the efficiency of the battery, The electrode material is subjected to a textured surface treatment to reduce the amount of light reflection. The rough grained surface treatment causes the uneven surface to scatter light, reduce the reflection of incident light, and increase the incident light. The distance traveled in the photoelectric conversion layer, which typically forms the surface of the electrode material into a V-shaped groove, a pyramid structure (not shown), or an inverse pyramid shape.

Then, a portion of the electrode material layer 404 is removed by referring to Figs. 5(a) and 5(b) to form a plurality of Y-direction dicing streets 406 and a plurality of X-direction dicing streets 408 intersecting the γ-direction dicing streets 406. Wherein, when only the gamma-direction dicing street 406 is formed, the electrode material layer 404 can be divided into a plurality of strip-shaped electrode material layers (not shown). After forming the Y-direction dicing street 406 and the X-direction dicing street 408, the electrode material layer 404 can be separated into a comb-shaped electrode 412 and a plurality of two-dimensionally arranged bulk electrodes 410 to constitute a first electrode 470 of the battery module. In the above, the Y-direction dicing street 406 and the X-direction dicing street 408 are formed by, for example, removing a portion of the electrode material layer 404 by a laser scribing process 1379423 P6396001 TW 26238twf.doc/n. Thereafter, referring to Figs. 6(a) and 6(b), a photoelectric conversion layer 414 is formed over the opaque substrate 402. The photoelectric conversion layer 414 covers the opaque substrate 402, the bulk electrode 410, and the partial comb electrode 412. Photoelectricity The conversion layer 414 may be a single layer structure or a stacked layer structure. The material of the photoelectric conversion layer 414 is, for example, amorphous iridium and its alloy, cadmium sulfide (Cds), copper indium gallium (CuInGaSe2 'CIGS), copper indium diselenide (Qjnse 2, CIS), cadmium telluride (CdTe), organic A multilayer structure in which the material or the above materials are stacked. The method of forming the photoelectric conversion layer 414 can be prepared, for example, by chemical vapor deposition, sputtering, or other suitable methods. In addition, the above-mentioned amorphous f alloy means that a hydrogen atom (H), a fluorine atom (F), a gas atom (C1), a germanium atom (Ge), and an oxygen atom are added to the amorphous germanium. ), an atom such as a carbon atom (q or a nitrogen atom (N). If a hydrogen atom, a fluorine atom, or a chlorine ion is added to the amorphous ruthenium, the defect in the ruthenium film can be repaired to obtain a better film quality; The addition of germanium atoms to the amorphous germanium can reduce the energy gap of the germanium film and absorb the longer-wavelength solar light. If an oxygen atom, a stone anti-atom, or a nitrogen atom is added to the amorphous germanium, the germanium film gap can be made. Increasingly, the shorter-wavelength solar rays are absorbed. Next, referring to Figs. 7(a) and 7(b), a portion of the photoelectric conversion layer 4 is removed to cut into a plurality of Y-direction scribe lines 416. These Y directions The dicing street 416 cuts the track 406 with respect to the parallel direction of the ike direction and exposes the underlying bulk electrode 41. The above-described method of forming the gamma directional scribe line 416 is formed, for example, by removing a portion of the photoelectric conversion layer 414 by a laser cutting process. Please refer to FIG. 8(a) and FIG. 8(b), on the opaque substrate 4〇2, 1379432 P639 A layer of electrode material 418 is formed on the surface of the electrode material layer 418. The electrode material layer 418 is a photoelectric conversion layer 4M, an electrode and an opaque substrate 4 〇 2. The electrode material layer 418 A is a transparent conductive oxide (TCO) film. The material is, for example, zinc oxide (ZnO), tin dioxide (Sn〇2), indium tin oxide (IT (7) or oxidation = (Ιη2〇3). The electrode material layer 418 is formed by, for example, chemical vapor deposition, Sputtering or other suitable method to prepare. Then, refer to Figure 9 (a), Figure 9 (b), Figure 9 (b) and Figure 9 (c), shape • Cut in multiple y directions The track 420 intersects a plurality of X-direction dicing streets 422 intersecting the Y-direction dicing streets 420. In one embodiment, the gamma-direction dicing streets 420 / a break the electrode material layer in the gamma direction and the X-direction scribe lines along the X direction The electrode material layer 418 is broken such that the electrode material layer 418 is divided into a comb electrode 426 and a plurality of block electrodes 424 arranged in two dimensions to form a second electrode of the battery module. In another embodiment, the gamma direction The scribe line 420 breaks the electrode material layer 418, and the χ direction scribe line 422 does not break the electrode material layer 418, such as As shown in Fig. 9(a), the electrode material layer 418 is divided into a plurality of tangential electrodes and a block electrode to form a second electrode 48A of the electric cell module. In other words, the χ direction scribe line 422 does not break the electrode material layer 418, but causes the two-dimensional arrangement in FIG. 9(a) to be large, and in the free electrode 424, a plurality of side-by-side block electrodes 424 in the x-direction are also connected through the connection 425. The combing connection is made, and the comb portion of the comb-shaped electrode 426 is also connected through the connecting portion 425 to form the block electrodes 424 and 426 in Fig. 4, respectively. The shape and number of the connecting portions 425 are not limited to the drawings, and may be of various shapes or numbers as long as the X-direction dicing streets 422 are not broken with the electrode material layer. Χdirection 20 1379423 P63960018TW 26238twf.doc/n The scribe line 422 is formed by removing a portion of the electrode material layer 418 and the portion of the photoelectric conversion layer 414 in the X-direction scribe line 4〇8 to expose the surface of the opaque substrate 4〇2. In addition, the Y-direction scribe line 420 is formed by removing a portion of the electrode material layer 418 in the 切割-direction scribe line 416 until the surface of the electrode 410 and the opaque substrate 402 are exposed. In still another embodiment, as shown in FIG. 9(b), the Y-direction dicing street 42 may further remove part of the electrode material layer 418 and the photoelectric conversion layer 414 until the surface of the electrode 410 is exposed, and is formed on The position of the track q6 is offset relative to the gamma direction. Similarly, the gamma directional scribe line 42 〇 and the directional scribe line 422 can be formed by removing a portion of the electrode material layer 418 and a portion of the photoelectric conversion layer 414 using a laser cutting process. Thereafter, a plurality of holes 45 are formed in the opaque substrate 402 exposed in the X-direction dicing street 422 and the γ-direction dicing street 42. The pattern of the holes 450 is not particularly limited, and the patterns on the surfaces 4〇仏 and 402b of the opaque substrate 4〇2 may take various shapes such as a circle, a square, a rectangle, a polygon, a ditch, etc., or Irregular. Moreover, the dimensions of the holes 450 that are opaque from the surface 40 of the substrate 402 to the surface 402b may be the same or different. For example, the method may be such that the size of the holes 45 延伸 extending from the surface 402a of the opaque substrate 4 〇 2 to the surface 402 b gradually becomes larger or smaller, or the hole 45 形成 is formed, for example, by using a laser cutting method The removal of the substrate can also be carried out using a side-by-side method. After performing the above steps, the light-transmissive thin film solar cell module 4 of the present palladium example can be completed. In use, light (Tai 21 1379423 P63960018TW 26238twf.doc/n sunlight) 460 is a portion of the light that is incident from the second electrode 480 through the photoelectric conversion layer 414 of each battery 401 to generate a photoelectric conversion effect to generate a voltage; The other portion of the light 460 passes through the X-direction scribe line 422 and the Y-direction scribe line 420' through the aperture 450 of the opaque substrate 402 to the surface 402b of the opaque substrate 402. Further, the light-transmitting thin film solar cell module 4 of the present embodiment can be produced by other means. According to the above, when the Y-direction dicing streets 416 are formed in the photoelectric conversion layer 414 (as shown in FIGS. 7(a) and 7(b)), a plurality of X-direction dicing streets of the vertical Y-direction dicing streets 416 can be collectively formed. (not shown), so that the photoelectric conversion layer 414 becomes a plurality of bulk photoelectric conversion layers (not shown). Next, the subsequent steps are the same as those of the above embodiment, and are not described herein. The present invention has other embodiments in addition to the above embodiments. 10 to FIG. 15 are schematic flow charts showing a method of fabricating a light transmissive thin film solar cell module according to another embodiment of the present invention. The sub-figure (a) of FIG. 10 to FIG. 15 is a schematic diagram of a top view, the sub-graph (b) is not a cross-sectional view taken along the section line 1_1′, and the sub-picture (c) is a section along the section line. - Schematic diagram of the section. In the drawings to FIG. 15, the same members as those of FIGS. 4 to 9 are omitted from the description. First, referring to FIG. 15(a), FIG. 15(b) and FIG. 15(c), the light-transmitting thin film solar cell module 5 of the present embodiment has a series connection in the x direction and a parallel connection in the x direction. A plurality of batteries 501. Further, between the batteries 5 〇 L, there are a plurality of Χ direction cutting sheds 524 having exposed opaque substrates 502. When the light (sunlight) 560 is incident from the opaque substrate 502, the light-transmissive thin film solar cell module 500 can be made to transmit light by cutting the window 524 in the X direction. The light-transmissive film too 1% energy battery module 5 includes an opaque substrate 5〇2 and a first electrode 57G disposed thereon, a second electrode, and a photoelectric conversion layer 512. The opaque substrate 502 has a plurality of holes 550. The first electrode 570 is disposed directly on the opaque substrate 5〇2, which is composed of a plurality of window electrodes 510 having a plurality of cutting windows 508 arranged in parallel. The first electrode 570 is a transparent conductive oxide film or a metal layer. The material of TC〇 is, for example, oxidized (ZnO), tin dioxide (Sn〇2), indium tin oxide (ITO) or indium oxide (in2〇3). The material of the metal layer is, for example, aluminum (A1), silver (Ag), molybdenum (Mo), copper (Cu) or other suitable metal or alloy. The second electrode 580 is disposed above the first electrode 570 and is comprised of a plurality of window electrodes 526 having a plurality of cutting windows 524 arranged in parallel. Further, the window electrodes 510, 526 are arranged in a parallel displacement manner. The second electrode 58 is a transparent conductive oxide film. The material of the TCO is, for example, zinc oxide (ZnO), tin dioxide (Sn〇2), indium tin oxide (no) or indium oxide (In2〇3). Further, the photoelectric conversion layer 512 is disposed between the first electrode 570 and the second electrode 580, and the photoelectric conversion layer 512 is composed of a plurality of window-shaped photoelectric conversion material layers having a plurality of cutting windows 516 arranged in parallel. The photoelectric conversion layer 512 may be a single layer structure or a stacked layer structure. The material of the photoelectric conversion layer 512 is, for example, amorphous iridium and its alloy, cadmium sulfide (CdS), copper indium gallium diselenide (CuInGaSe2, CIGS), copper indium diselenium (CuInSe2, CIS), cadmium telluride (CdTe), A multilayer structure in which an organic material or the above materials are stacked. The cutting window 516 and the cutting window 508 and the cutting window 524 each correspond to the opaque substrate 502 23 1379423 P63960018TW 26238 twf.doc/n plurality of holes 550 ' Thus, a plurality of through holes 555 can be formed. The shape of the through hole 555 is not particularly limited and may be various shapes such as a circle, a square, a rectangle, a polygon, or an irregular shape. The size 550 of the plurality of holes 550 may be the same as or different from the size of the surface 502a of the opaque substrate 502 and the size of the surface 502b. For example, the holes 550 may be sized to gradually increase from the surface 502a of the opaque substrate 5〇2 to the surface 502b, or may become smaller. In addition, the pattern of the holes 550 on the opaque substrate 502 is not particularly limited, and the patterns on the surfaces 502a and 502b of the opaque substrate 502 may take various shapes such as a circle, a square, a rectangle, a polygon, etc., or Regular form. Since the light-transmitting thin film solar cell module 5 of the present embodiment has a plurality of through holes 555, it can increase the light transmittance of the battery module. Therefore, the light transmissive thin film solar cell module of the present embodiment can greatly improve the light transmittance of the device compared to the conventional light transmissive thin film solar cell module. In addition, as shown in FIG. 15(c), 'because the first electrode is covered by the photoelectric conversion layer si2', it is avoided that the high-temperature laser cutting process causes the second electrode 58 to be formed when the X-direction cutting window 524 is formed. The ruthenium generates metal particles or glaze and contacts the first electrode 570 to cause short circuit and leakage current problems, thereby affecting the process yield and the efficiency of the solar cell. Hereinafter, a method of manufacturing the light-transmitting type thin film solar cell module 500 of the present embodiment will be described in detail with reference to Figs. First, please refer to FIG. 1(8) and FIG. 1(8) to provide an opaque substrate. The material of the moon-impermeable substrate 5〇2 is, for example, a metal thin plate or a plastic base.

P639600J 8TW 26238twf.d〇c/n = its = suitable opaque material. Next, in the opaque material layer 5G4. The electrode material layer 504 is - Zn Zn nt _ or the metal layer TC 〇 (4) is, for example, oxidized tin oxide (SnO 2 ), indium tin oxide (IT 〇 ) or (d)). The material of the metal layer is, for example, indium (Cu) or other suitable metal or alloy. ^ 〇j Then, referring to FIG. 11 (4), FIG. 11 (b) and FIG. u (4), a plurality of Y directions capable of separating the electrode material layer 5 () 4 into a plurality of strip electrode material layers are formed in the electrode material layer 504. The cutting ball 鄕, and the multi-directional cutting window in a two-dimensional arrangement, the 〇8β γ-direction dicing road and the 乂-direction cutting window 50! The electrode material layer can be formed into a plurality of window electrodes 51 〇. Next, referring to Fig. 12 (a), Fig. 12 (b) and Fig. 12 (c), a photoelectric conversion layer 512 is formed over the opaque substrate 502. After the photoelectric conversion layer 5 covers the opaque substrate 502 and the window electrode 51, please refer to FIGS. 13(a), 13(b) and 13(c) to remove a portion of the photoelectric conversion layer 512. A plurality of γ-direction dicing streets $μ and a plurality of X-direction cutting windows 516 are formed. Wherein, the plurality of γ-direction dicing streets 514 are formed above the window-shaped electrodes 510 and cut in the parallel γ-directions 5〇6; the X-direction cutting windows 516 are formed in the X-direction cutting windows 508 and arranged in two dimensions. In this step process, part of the photoelectric conversion layer 512 can also be removed, and only a plurality of Y-direction dicing streets 514 are formed, but the X directions of FIGS. 13(a), 13(b) and 13(c) are not formed. The window 516 is cut. The drawings of the above embodiments are not shown here, as they are known to those skilled in the art. 25 1379423 P63960018TW 26238twf.d〇c/n Following the OK > Figure M(a), Figure Μ(ΐ5) and Figure M(6), a layer of electrode material layer 52Q is formed over the opaque earth plate 502. This electrode material layer 覆盖 covers the photoelectric conversion layer 512, the f-type electrode and the opaque substrate 5〇2. The electrode material layer 520 is a dielectric oxide (Tc) film. The material of (7) is, for example, zinc oxide (Zn 〇), ruthenium dioxide (2), indium tin oxide (yttrium) or indium oxide (in 2 〇 3).

Subsequently, referring to Figs. 15(a), 15(b) and 15(4), a plurality of Y-direction dicing streets 522 and a plurality of X-direction dicing windows 524 are formed so that the electrode material layer 520 becomes a plurality of window electrodes 526. Here, the γ-direction dicing street 522 is formed by removing a portion of the electrode material layer 52 and a portion of the photoelectric conversion layer 512' until the surface of the window electrode 51 is exposed. The χ direction cutting window 524 形成 is formed by removing a portion of the electrode material layer 52 中 in the X-direction dicing window 516, exposing the underlying opaque substrate 5 〇 2 .

In the above, if the previous step is to form only a plurality of γ-direction dicing streets 514, the X-direction cutting window 524 needs to be removed in this step.

A portion of the electrode material layer 52 in the direction cutting window 516 is formed with a portion of the photoelectric conversion layer 512. Next, the opaque substrate 5〇2 exposed in the X-direction cutting window 516 is removed to form a hole 55〇 through the two surfaces 5〇2a, 5〇2b in its Yin. The plurality of holes 550 of the opaque substrate 502 correspond to the cutting window 516 and the cutting window 5〇8 and the cutting window 524 to form a plurality of through holes 555. The method of forming the holes 55 is, for example, using a laser cutting method to remove the substrate by its high temperature, and the substrate can also be removed by etching. After performing the above various steps, the light-transmissive thin film solar cell module having the plurality of through holes 555 of the present invention can be completed. The present invention is described above. The light-transmissive thin film solar cell module and the manufacturing method thereof have two-way chopping or cutting windows simultaneously formed when the first electrode is fabricated, so that the prepared light-transmitting thin film solar cell module can not be There are problems with short-circuit and leakage due to high-temperature laser cutting processes, which affect process yield and solar cell efficiency. In addition, compared with the light-transmissive thin film solar cell module, the light-transmissive thin film-free solar cell module of the present invention has an opening for exposing an opaque substrate, which can greatly improve the light transmission of the battery module. rate. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and anyone skilled in the art can make some modifications and refinements without departing from the scope of the invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a conventional thin film solar cell module. 2 is a schematic view showing a conventional solar cell module. FIG. 3A is a schematic view showing a conventional solar cell element. Membrane: A flow chart of a method for manufacturing a battery pack according to an embodiment of the present invention. Among them, Figure 4 to Figure 8? Figure (4) shows the schematic diagram of the upper view, the sub-clear is the green surface along the section = 1-1, but the sub-pictures (4) and (6) of Figure 9 are the top view of the two types of non-Bei Shi, the sub-graph ( b) and subgraph (b,) are schematic cross-sectional views of two different embodiments along the section line. The subgraph (4) is a schematic diagram of the cross section of the green display 27 1379423 P63960018TW 26238twf.doc/n section line ΙΓ-ΙΓ. 10 to FIG. 15 are schematic flow charts showing a method of fabricating a light transmissive thin film solar cell module according to another embodiment of the present invention. In the ', the sub-figure (a) of FIG. 10 to FIG. 15 is a schematic diagram of the top view, the sub-figure (b) - is a schematic cross-sectional view along the section line Ι-Γ; the sub-picture of FIG. 11 to FIG. 15 ( C) is a schematic diagram showing the section along the section line ΙΙ-ΙΓ. [Main component symbol description] ® 1, 114, 402, 502: opaque substrate 3, 118: transparent conductive layer 4, 156: photoelectric conversion layer 5, 158: metal electrode 6: hole 8: photoresist 110: solar cell module 122: Back electrode • 140: Ditch 150: Thin film solar cell module 152: Glass substrate • 154: First electrode • 400, 500: Transmissive thin film solar cell module 401, 501: Battery 404, 418, 504, 520 : electrode material layers 406, 416, 420, 506, 514, 522: Y-direction dicing streets 408, 422: X-direction dicing streets 28 1379423 P63960018TW 26238twf.doc/n 410, 424, 424', 426': bulk electrodes 412 426: comb-shaped electrodes 414, 512: photoelectric conversion layer 425: connecting portions 450, 550: holes 460, 560: light rays 470, 570: first electrodes 480, 580: second electrodes 510, 526: window electrodes 508, 516, 524: cutting window 555: through hole

29

Claims (1)

1379423 101-3-6 • Application for a hometown l,..丄·A type of thin-film solar cell module is fabricated on a plate that is not permeable to the plate. Forming a plurality of '' and a plurality of intersecting_(four)-γ-direction dicing lines of the first electrode material layer, and dividing the first electrode material layer into - the first electrode a plurality of first block electrodes arranged in two dimensions; forming a photoelectric conversion layer covering the opaque substrate, the pole and a portion of the first comb electrode; and removing a portion of the photoelectric conversion layer for the a plurality of second directional cutting passages above the electrode that are parallel to the γ-direction directional cutting lanes; Forming a second electrode material layer covering the photoelectric conversion layer, the first electrodes and the opaque substrate; Removing a portion of the second electrode material layer and a portion of the photoelectric conversion layer to form a plurality of third Y-direction dicing streets exposing the first bulk electrode surface and the opaque substrate surface, and the first X Forming a plurality of second X-direction dicing streets in the directional cutting track, exposing the opaque substrate 'separating the second electrode material layer into a second comb-shaped electrode and a plurality of second block electrodes arranged in two dimensions; and removing the portion The second X-direction dicing street and the opaque substrate exposed by the third γ-direction dicing streets to form a plurality of holes in the opaque substrate, the sidewalls of the holes exposing the opaque substrate, wherein 30 101- 3-5 'ϋ ϊ 的 该 该 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该When the layer is formed to the scribe line, the method further includes cutting the t in the X-th direction, and forming a number of the third X-direction dicing streets. The third X-direction cuttings k/, the first X-direction dicing streets Bit Corresponds to and overlaps. (4) The method of manufacturing a light-transmissive thin-film solar cell according to claim 2, wherein the third-direction directional cutting track is prepared by a laser cutting method.曰 The manufacturing method of the light-transmitting film group 2 according to item ii of the patent application scope, wherein the second and third directions are the same. m. The second x-direction scribe line is prepared by laser cutting. The method for manufacturing a light-transmissive thin-film solar electric device according to claim 1, wherein the first electrode material layer is a transparent conductive oxide layer or a metal layer. 6. The method of manufacturing a light-transmitting thin film solar electric f module according to the fifth aspect of the patent, wherein the material of the transparent conductive oxide layer comprises oxidized, tin dioxide, indium tin oxide or oxidation Indium; the material of the metal layer includes aluminum, silver, steel, molybdenum or alloys thereof. The manufacturing method of the light-transmitting type thin film solar battery wheel set according to the above-mentioned item 11 of the first aspect, wherein the photoelectric conversion layer is a single layer structure or a stacked layer structure. 31 101-3-6 101-3-6 • If you are applying for a patented Fangu module, the stone method <7 »廿人Λ The light-transmissive thin-film solar power according to the above-mentioned item, wherein the material of the photoelectric conversion layer comprises amorphous steel indium bismuth, antimony telluride or 9. light-transmissive thin film solar energy as described in claim 1 Electricity A method in which the holes are formed in the opaque substrate includes a laser cutting method or an etching method. The method for manufacturing a light-transmitting thin film solar cell module according to the invention, wherein the second comb-shaped electrode has a plurality of comb portions and the second blocks juxtaposed in the Y direction The electrodes are connected by a plurality of connecting portions. 13. A light transmissive thin film solar cell module having a plurality of cells connected in series with each other disposed on an opaque substrate, wherein a plurality of holes extending through the opaque substrate between the cells are included: An opaque substrate having the holes, wherein the sidewalls of the holes expose the opaque substrate; a first electrode disposed on the 5 opaque substrate, and the first electrode is arranged by a first comb electrode and two-dimensionally a plurality of first block electrode groups 32 101-3-6; a second electrode θ, % is placed above the first electrode, and the second electrode type electrode and a plurality of block-shaped second electrodes arranged in two dimensions The eight electrodes of the group and the second poles of the block are exposed to each other. a knives nr bulk electrode, a portion of the opaque substrate, or the holes, wherein the second comb-shaped electrode and the first comb-shaped electrode are arranged in a parallel displacement manner in a left-right direction and a first block-shaped electrode ,, and f photoelectric conversion layer 'disposed between the first electrode and the second electrode'. The photoelectric conversion layer is composed of a plurality of photoelectric conversion material layers arranged in two dimensions, wherein the sidewalls of the first electrode and the surrounding The surface is covered by the photoelectric conversion layer and the side walls and the upper surface of the hole lake-photoelectric conversion layer are covered by the second electrode. 14. Translucent thin solar energy as described in item 13 of the patent scope of Shen # The battery module 'where the _th electrode is a transparent conductive oxide layer or a metal layer. 15. The material f of the transparent conductive oxide layer in the light-transmissive thin film solar cell module described in the above-mentioned item 14 includes the oxidized word, tin dioxide, indium tin oxide or indium oxide; The material of the layer includes aluminum, silver, copper, saturating or alloys thereof. 16. For a light-transmissive thin-film solar cell module of the 13th position, the photoelectric conversion layer is a single-layer structure or a stacked acoustic structure. The light transmissive thin film solar cell module of the invention of claim 13 wherein the material of the photoelectric conversion layer comprises amorphous bismuth and its alloy, cadmium sulfide, copper indium gallium Selenium, copper indium diselenide, cadmium telluride or organic materials. 18. The light transmissive thin film solar cell module of claim 13, wherein the second electrode is a transparent conductive oxide layer. 19. The light transmissive thin film solar cell module according to claim 18, wherein the transparent conductive oxide layer is made of zinc oxide, tin oxide, indium tin oxide or indium oxide. One 20. The light-transmitting thin film solar cell module according to claim 18, wherein a plurality of comb portions of the second comb-shaped electrode and the second block electrodes are juxtaposed between the second comb-shaped electrodes A method for manufacturing a light-transmissive thin film solar cell module, comprising a plurality of connection portions, wherein a first electrode village layer is formed on the opaque substrate; a portion of the first electrode material layer is formed to form a plurality of strips of the first electrode material layer h which are separated into a plurality of electrode material layers, and the first-Y direction cutting channels are arranged in two dimensions. The majority of the cutting window 'make the first electrode material layer a plurality and the ==== some (a) of the side wall removal part of the material exchange layer, to (4) form a plurality of relatively parallel to the first direction of the directional cutting road 34 1479423 101 a -3-6 dicing street; forming a second electrode material layer on the photoelectric conversion layer; and a λ2 ϊ 材料 material layer and a portion of the photoelectric conversion layer, culling, and cutting the first X direction Direction, ^ ^ is formed by cutting a plurality of second tangential cutting windows of the opaque substrate from the mouth, so that the second electrode material layer becomes a plurality of second window electrodes; Removing the exposed opaque substrate of the second X-direction butterfly window to form a plurality of holes in the opaque substrate, the sidewalls of the holes exposing the opaque substrate and the first electrode around the holes The sidewall and the upper surface are covered by the photoelectric conversion layer, and sidewalls and an upper surface of the photoelectric conversion layer around the holes are covered by the second electrode. The method for manufacturing a light-transmitting thin film solar cell module according to claim 21, wherein when the portion of the photoelectric conversion layer is removed to form the second meandering scribe lines, the method further comprises: a plurality of third X-direction cutting windows are formed in the first χ direction cutting windows, and the third 方向 direction cutting windows correspond to positions of the first X-direction dicing streets and are heavy. 23, as claimed in claim 21 The manufacturing method of the light-transmitting thin film solar cell module, wherein the first, second, and third γ-direction dicing streets and the first, second, and third X-direction cutting windows are laser cutting preparation. The method of manufacturing a light-transmitting thin film solar cell module according to claim 21, wherein the first electrode material layer is a transparent conductive layer 35 101-3-6 an oxide layer or a metal layer. 25. The light-transmissive film according to the scope of the patent application, wherein the transparent conductive oxide layer is made of zinc oxide, tin oxide, indium tin oxide or indium oxide; The layers of the material include inscriptions, silver, copper, or alloys thereof. 26. The method for fabricating a light-transmitting (tetra) film solar cell module according to claim 21, wherein the photoelectric conversion layer is a single layer structure or a stacked layer structure. 27. For example, please refer to the manufacturing method of the light-transmissive (four) film solar energy module of Weiwei. The material of the photoelectric conversion layer includes non-crusted a矽 and its alloy, cadmium sulfide and copper indium gallium. Selenium, copper indium diselenide, cadmium telluride or organic materials. 2,. For example, please refer to the method for manufacturing a transparent thin film solar energy "pool module" of the 21st item, wherein the second electrode material layer is a transparent conductive oxide layer. 29. The method for manufacturing a light-transmitting thin-film solar panel according to the invention, wherein the material of the transparent conductive oxide layer comprises zinc oxide, tin trioxide, indium tin oxide or an oxidized surface. The light transmissive thin film solar energy manufacturing method includes a method of forming the holes in the opaque substrate, including a laser cutting method or an etching method. 31. A light transmissive thin film solar cell module having a plurality of cells that are in series with each other and are connected in parallel with each other in the gamma direction, and have a plurality of through holes of the through-opaque substrate between the cells, the module package 36 1379423 101-3-6 includes: exposure ==: a plurality of holes, the sidewall 第-electrode of the holes are disposed on the opaque substrate, and the first electrode 组成 is composed of a plurality of recorded window-shaped electrodes corresponding to the holes Have A first plurality of cutting window; H θ persons electrode, disposed in the first - upper electrodes, J the second electrode The second window-shaped electrode has a plurality of second window-shaped electrodes, and the plurality of second-shaped window-shaped electrodes have a plurality of second cutting windows corresponding to the (four) and the first cutting windows, and jointly form the through-holes The towel and the window-type electrode are arranged in a parallel displacement manner; and the d-electrode photoelectric conversion layer is disposed on the first electrode and the second electrode, and the light-interchange layer is a plurality of wire photoelectric conversion materials. Laying, wherein the side walls and the upper surface of the first electrode around the through holes are covered by the light The side wall and the upper surface of the photoelectric conversion layer which are covered by the storm conversion layer and covered by the through holes are covered by the second electrode. For example, in the case of U, the light-transmissive thin-film solar cell of the above-mentioned item 31 is in which the first electrode is a transparent conductive oxide layer or a metal layer. 33. The light-transmissive thin film solar energy according to claim n, wherein the material of the turned-on conductive oxide layer comprises an oxidized word, a second emulsified tin, and an indium tin oxide (IV); Materials include Shao, silver, steel, molybdenum or alloys. The light transmissive thin film solar cell module according to claim 31, wherein the photoelectric conversion layer is a single layer structure or a stacked layer The invention relates to the light-transmissive thin-film solar energy group described in claim 31, wherein the material of the photoelectric conversion layer comprises amorphous ruthenium and its combination, *, cadmium sulfide, copper indium gallium diselenide, copper indium two Selenium, cadmium telluride or organic materials. The light-transmissive thin film solar module of claim 31, wherein the second electrode is a transparent conductive oxide layer. [7] The light-transmitting type thin film solar energy according to the invention of claim 100, wherein the transparent conductive oxide material f comprises zinc oxide, tin oxide, indium tin oxide or indium oxide. 38