TWI372650B - - Google Patents

Info

Publication number
TWI372650B
TWI372650B TW097117912A TW97117912A TWI372650B TW I372650 B TWI372650 B TW I372650B TW 097117912 A TW097117912 A TW 097117912A TW 97117912 A TW97117912 A TW 97117912A TW I372650 B TWI372650 B TW I372650B
Authority
TW
Taiwan
Application number
TW097117912A
Other languages
Chinese (zh)
Other versions
TW200902132A (en
Inventor
Ulrich Voeller Hans
Mueller Rolf
Michael Hartung Robert
Original Assignee
Centrotherm Thermal Solutions Gmbh & Co Kg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrotherm Thermal Solutions Gmbh & Co Kg filed Critical Centrotherm Thermal Solutions Gmbh & Co Kg
Publication of TW200902132A publication Critical patent/TW200902132A/zh
Application granted granted Critical
Publication of TWI372650B publication Critical patent/TWI372650B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
TW097117912A 2007-05-23 2008-05-15 Method for controlling process gas concentration TW200902132A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007024266A DE102007024266A1 (de) 2007-05-23 2007-05-23 Verfahren zur Steuerung der Prozessgaskonzentration

Publications (2)

Publication Number Publication Date
TW200902132A TW200902132A (en) 2009-01-16
TWI372650B true TWI372650B (cg-RX-API-DMAC7.html) 2012-09-21

Family

ID=39637712

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097117912A TW200902132A (en) 2007-05-23 2008-05-15 Method for controlling process gas concentration

Country Status (8)

Country Link
US (1) US20100215853A1 (cg-RX-API-DMAC7.html)
EP (1) EP2150634A1 (cg-RX-API-DMAC7.html)
JP (1) JP2010527794A (cg-RX-API-DMAC7.html)
KR (1) KR20100030620A (cg-RX-API-DMAC7.html)
CN (1) CN101688304A (cg-RX-API-DMAC7.html)
DE (1) DE102007024266A1 (cg-RX-API-DMAC7.html)
TW (1) TW200902132A (cg-RX-API-DMAC7.html)
WO (1) WO2008142043A1 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009012200A1 (de) * 2009-03-11 2010-09-16 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenquelle
JP5884448B2 (ja) * 2011-12-01 2016-03-15 富士電機株式会社 はんだ接合装置およびはんだ接合方法
DE102012021527A1 (de) 2012-10-31 2014-04-30 Dockweiler Ag Vorrichtung zur Erzeugung eines Gasgemisches
DE102024107217A1 (de) 2024-03-13 2025-09-18 Pink Gmbh Thermosysteme Befüllvorrichtung zum Befüllen eines Bubblers, Befüllsystem und damit ausgerüstete Löt- oder Sinteranlage, sowie Verfahren zum Betreiben der Befüllvorrichtung

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4276243A (en) * 1978-12-08 1981-06-30 Western Electric Company, Inc. Vapor delivery control system and method
JPS60211072A (ja) * 1984-04-06 1985-10-23 Matsushita Electric Ind Co Ltd 揮発性物質の気化装置
US4911101A (en) * 1988-07-20 1990-03-27 General Electric Company Metal organic molecular beam epitaxy (MOMBE) apparatus
US5227604A (en) * 1991-06-28 1993-07-13 Digital Equipment Corporation Atmospheric pressure gaseous-flux-assisted laser reflow soldering
JPH0610144A (ja) 1992-06-29 1994-01-18 Matsushita Electric Ind Co Ltd 低蒸気圧材料供給装置
US5249733A (en) * 1992-07-16 1993-10-05 At&T Bell Laboratories Solder self-alignment methods
JPH07164141A (ja) * 1993-10-22 1995-06-27 Nippon Sanso Kk はんだ付け方法及び装置
WO1996012048A2 (en) * 1994-10-11 1996-04-25 Gelest, Inc. Conformal titanium-based films and method for their preparation
US6616767B2 (en) * 1997-02-12 2003-09-09 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability
US6698240B1 (en) * 1999-06-03 2004-03-02 Shin-Etsu Chemical Co., Ltd. Apparatus for manufacturing glass base material and a method for manufacturing glass base material
US20050095859A1 (en) * 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control

Also Published As

Publication number Publication date
DE102007024266A1 (de) 2008-11-27
JP2010527794A (ja) 2010-08-19
KR20100030620A (ko) 2010-03-18
EP2150634A1 (de) 2010-02-10
TW200902132A (en) 2009-01-16
CN101688304A (zh) 2010-03-31
US20100215853A1 (en) 2010-08-26
WO2008142043A1 (de) 2008-11-27

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees