TWI367526B - An etching method in fabrications of microstructures - Google Patents

An etching method in fabrications of microstructures

Info

Publication number
TWI367526B
TWI367526B TW093127548A TW93127548A TWI367526B TW I367526 B TWI367526 B TW I367526B TW 093127548 A TW093127548 A TW 093127548A TW 93127548 A TW93127548 A TW 93127548A TW I367526 B TWI367526 B TW I367526B
Authority
TW
Taiwan
Prior art keywords
fabrications
microstructures
etching method
etching
Prior art date
Application number
TW093127548A
Other languages
English (en)
Other versions
TW200512824A (en
Inventor
Gregory P Schaadt
Hongqin Shi
Original Assignee
Reflectivity Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Reflectivity Inc filed Critical Reflectivity Inc
Publication of TW200512824A publication Critical patent/TW200512824A/zh
Application granted granted Critical
Publication of TWI367526B publication Critical patent/TWI367526B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00595—Control etch selectivity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Drying Of Semiconductors (AREA)
TW093127548A 2003-09-17 2004-09-10 An etching method in fabrications of microstructures TWI367526B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/665,998 US6939472B2 (en) 2003-09-17 2003-09-17 Etching method in fabrications of microstructures

Publications (2)

Publication Number Publication Date
TW200512824A TW200512824A (en) 2005-04-01
TWI367526B true TWI367526B (en) 2012-07-01

Family

ID=34274694

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093127548A TWI367526B (en) 2003-09-17 2004-09-10 An etching method in fabrications of microstructures

Country Status (3)

Country Link
US (1) US6939472B2 (zh)
TW (1) TWI367526B (zh)
WO (1) WO2005035090A2 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150332A (ja) 2003-11-14 2005-06-09 Sony Corp エッチング方法
US7553684B2 (en) * 2004-09-27 2009-06-30 Idc, Llc Method of fabricating interferometric devices using lift-off processing techniques
US20060065622A1 (en) * 2004-09-27 2006-03-30 Floyd Philip D Method and system for xenon fluoride etching with enhanced efficiency
US7442274B2 (en) * 2005-03-28 2008-10-28 Tokyo Electron Limited Plasma etching method and apparatus therefor
US7566664B2 (en) * 2006-08-02 2009-07-28 Qualcomm Mems Technologies, Inc. Selective etching of MEMS using gaseous halides and reactive co-etchants
US7719754B2 (en) * 2008-09-30 2010-05-18 Qualcomm Mems Technologies, Inc. Multi-thickness layers for MEMS and mask-saving sequence for same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4498983A (en) * 1983-05-26 1985-02-12 Baxter Travenol Laboratories, Inc. Pressure cuff draw mode enhancement system and method for a single needle blood fractionation system
US4498953A (en) * 1983-07-27 1985-02-12 At&T Bell Laboratories Etching techniques
US4551197A (en) 1984-07-26 1985-11-05 Guilmette Joseph G Method and apparatus for the recovery and recycling of condensable gas reactants
US5726480A (en) 1995-01-27 1998-03-10 The Regents Of The University Of California Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same
WO1998032163A1 (en) * 1997-01-22 1998-07-23 California Institute Of Technology Gas phase silicon etching with bromine trifluoride
DE19704454C2 (de) * 1997-02-06 2000-03-02 Bosch Gmbh Robert Verfahren zur Herstellung oberflächenmikromechanischer Strukturen mittels Ätzung in der Dampfphase
EP0983610A1 (en) 1998-03-20 2000-03-08 Surface Technology Systems Limited Method and apparatus for manufacturing a micromechanical device
US6740247B1 (en) 1999-02-05 2004-05-25 Massachusetts Institute Of Technology HF vapor phase wafer cleaning and oxide etching
JP3325000B2 (ja) 1999-05-28 2002-09-17 ソニーケミカル株式会社 半導体素子の実装方法
US6197610B1 (en) 2000-01-14 2001-03-06 Ball Semiconductor, Inc. Method of making small gaps for small electrical/mechanical devices

Also Published As

Publication number Publication date
US6939472B2 (en) 2005-09-06
TW200512824A (en) 2005-04-01
US20050059253A1 (en) 2005-03-17
WO2005035090A3 (en) 2005-05-26
WO2005035090A2 (en) 2005-04-21

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