TWI366743B - Positive resist composition and patterning process - Google Patents
Positive resist composition and patterning processInfo
- Publication number
- TWI366743B TWI366743B TW097100691A TW97100691A TWI366743B TW I366743 B TWI366743 B TW I366743B TW 097100691 A TW097100691 A TW 097100691A TW 97100691 A TW97100691 A TW 97100691A TW I366743 B TWI366743 B TW I366743B
- Authority
- TW
- Taiwan
- Prior art keywords
- resist composition
- patterning process
- positive resist
- positive
- patterning
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
- Y10S430/123—Sulfur in heterocyclic ring
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007001374A JP4314496B2 (ja) | 2007-01-09 | 2007-01-09 | ポジ型レジスト材料及びパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200903162A TW200903162A (en) | 2009-01-16 |
TWI366743B true TWI366743B (en) | 2012-06-21 |
Family
ID=39698706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW097100691A TWI366743B (en) | 2007-01-09 | 2008-01-08 | Positive resist composition and patterning process |
Country Status (4)
Country | Link |
---|---|
US (1) | US7618765B2 (zh) |
JP (1) | JP4314496B2 (zh) |
KR (1) | KR101022602B1 (zh) |
TW (1) | TWI366743B (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7905122B2 (en) * | 2003-04-28 | 2011-03-15 | Nidec Motor Corporation | Method and system for determining a washing machine load unbalance |
WO2007124092A2 (en) | 2006-04-21 | 2007-11-01 | Cornell Research Foundation, Inc. | Photoacid generator compounds and compositions |
JP4844761B2 (ja) * | 2008-01-18 | 2011-12-28 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
JP4513990B2 (ja) * | 2008-01-18 | 2010-07-28 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
US8163461B2 (en) * | 2008-04-09 | 2012-04-24 | Cornell Research Foundation, Inc. | Photoacid generator compounds and compositions |
KR100998503B1 (ko) * | 2008-10-30 | 2010-12-07 | 금호석유화학 주식회사 | 방향족 환을 포함하는 산 발생제 |
JP5331454B2 (ja) * | 2008-11-13 | 2013-10-30 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法、新規な化合物および酸発生剤 |
KR101547356B1 (ko) | 2008-11-13 | 2015-08-25 | 도오꾜오까고오교 가부시끼가이샤 | 레지스트 조성물, 레지스트 패턴 형성 방법, 신규 화합물 및 산발생제 |
KR101219989B1 (ko) * | 2008-12-04 | 2013-01-08 | 금호석유화학 주식회사 | 광산발생제, 공중합체, 화학증폭형 레지스트 조성물 및 화학증폭형 레지스트 조성물을 이용한 패턴 형성 방법 |
JP5520489B2 (ja) * | 2009-01-07 | 2014-06-11 | 富士フイルム株式会社 | リソグラフィ用基板被覆方法、及び該方法に用いられる感活性光線または感放射線性樹脂組成物 |
KR101843599B1 (ko) | 2010-09-09 | 2018-03-29 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물 |
JP5556765B2 (ja) * | 2011-08-05 | 2014-07-23 | 信越化学工業株式会社 | ArF液浸露光用化学増幅ポジ型レジスト材料及びパターン形成方法 |
US10216084B2 (en) | 2014-12-05 | 2019-02-26 | Toyo Gosei Co., Ltd. | Sulfonic acid derivative, photoacid generator using same, resist composition, and device manufacturing method |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2906999B2 (ja) | 1994-04-26 | 1999-06-21 | 信越化学工業株式会社 | レジスト材料 |
JP3751065B2 (ja) | 1995-06-28 | 2006-03-01 | 富士通株式会社 | レジスト材料及びレジストパターンの形成方法 |
JP3297272B2 (ja) | 1995-07-14 | 2002-07-02 | 富士通株式会社 | レジスト組成物及びレジストパターンの形成方法 |
US6200725B1 (en) * | 1995-06-28 | 2001-03-13 | Fujitsu Limited | Chemically amplified resist compositions and process for the formation of resist patterns |
JP3830183B2 (ja) * | 1995-09-29 | 2006-10-04 | 東京応化工業株式会社 | オキシムスルホネート化合物及びレジスト用酸発生剤 |
JP3587413B2 (ja) * | 1995-12-20 | 2004-11-10 | 東京応化工業株式会社 | 化学増幅型レジスト組成物及びそれに用いる酸発生剤 |
KR100441734B1 (ko) * | 1998-11-02 | 2004-08-04 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 신규한 에스테르 화합물, 고분자 화합물, 레지스트 재료및 패턴 형성 방법 |
JP2000336121A (ja) | 1998-11-02 | 2000-12-05 | Shin Etsu Chem Co Ltd | 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法 |
US6916591B2 (en) * | 2002-03-22 | 2005-07-12 | Shin-Etsu Chemical Co., Ltd. | Photoacid generators, chemically amplified resist compositions, and patterning process |
WO2004074242A2 (en) | 2003-02-19 | 2004-09-02 | Ciba Specialty Chemicals Holding Inc. | Halogenated oxime derivatives and the use thereof as latent acids |
JP4092571B2 (ja) * | 2003-08-05 | 2008-05-28 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP5035560B2 (ja) * | 2007-07-04 | 2012-09-26 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
-
2007
- 2007-01-09 JP JP2007001374A patent/JP4314496B2/ja active Active
-
2008
- 2008-01-02 US US12/003,834 patent/US7618765B2/en active Active
- 2008-01-08 KR KR1020080002068A patent/KR101022602B1/ko active IP Right Grant
- 2008-01-08 TW TW097100691A patent/TWI366743B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR20080065550A (ko) | 2008-07-14 |
TW200903162A (en) | 2009-01-16 |
JP4314496B2 (ja) | 2009-08-19 |
US20080254386A1 (en) | 2008-10-16 |
JP2008170535A (ja) | 2008-07-24 |
US7618765B2 (en) | 2009-11-17 |
KR101022602B1 (ko) | 2011-03-16 |
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