TWI364451B - - Google Patents

Download PDF

Info

Publication number
TWI364451B
TWI364451B TW096135128A TW96135128A TWI364451B TW I364451 B TWI364451 B TW I364451B TW 096135128 A TW096135128 A TW 096135128A TW 96135128 A TW96135128 A TW 96135128A TW I364451 B TWI364451 B TW I364451B
Authority
TW
Taiwan
Prior art keywords
acid
chemical mechanical
mechanical polishing
polishing slurry
slurry
Prior art date
Application number
TW096135128A
Other languages
English (en)
Chinese (zh)
Other versions
TW200819524A (en
Original Assignee
Epoch Material Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epoch Material Co Ltd filed Critical Epoch Material Co Ltd
Priority to TW096135128A priority Critical patent/TW200819524A/zh
Publication of TW200819524A publication Critical patent/TW200819524A/zh
Application granted granted Critical
Publication of TWI364451B publication Critical patent/TWI364451B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW096135128A 2006-10-24 2007-09-20 Chemical mechanical polishing slurry and method for chemical mechanical planarization TW200819524A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW096135128A TW200819524A (en) 2006-10-24 2007-09-20 Chemical mechanical polishing slurry and method for chemical mechanical planarization

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW95139197 2006-10-24
TW096135128A TW200819524A (en) 2006-10-24 2007-09-20 Chemical mechanical polishing slurry and method for chemical mechanical planarization

Publications (2)

Publication Number Publication Date
TW200819524A TW200819524A (en) 2008-05-01
TWI364451B true TWI364451B (https=) 2012-05-21

Family

ID=39318504

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096135128A TW200819524A (en) 2006-10-24 2007-09-20 Chemical mechanical polishing slurry and method for chemical mechanical planarization

Country Status (2)

Country Link
US (2) US8167684B2 (https=)
TW (1) TW200819524A (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090056994A1 (en) * 2007-08-31 2009-03-05 Kuhr Werner G Methods of Treating a Surface to Promote Metal Plating and Devices Formed
US20090056991A1 (en) * 2007-08-31 2009-03-05 Kuhr Werner G Methods of Treating a Surface to Promote Binding of Molecule(s) of Interest, Coatings and Devices Formed Therefrom
US9404197B2 (en) 2008-07-07 2016-08-02 Soraa, Inc. Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
US9589792B2 (en) 2012-11-26 2017-03-07 Soraa, Inc. High quality group-III metal nitride crystals, methods of making, and methods of use
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
WO2012005723A1 (en) * 2010-07-06 2012-01-12 Zettacore, Inc. Methods of treating copper surfaces for enhancing adhesion to organic substrates for use in printed circuit boards
US9275912B1 (en) 2012-08-30 2016-03-01 Soraa, Inc. Method for quantification of extended defects in gallium-containing nitride crystals
US9299555B1 (en) 2012-09-28 2016-03-29 Soraa, Inc. Ultrapure mineralizers and methods for nitride crystal growth
US8802471B1 (en) * 2012-12-21 2014-08-12 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US8920567B2 (en) 2013-03-06 2014-12-30 International Business Machines Corporation Post metal chemical-mechanical planarization cleaning process
US9340706B2 (en) * 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
US9437453B2 (en) * 2014-03-31 2016-09-06 Stmicroelectronics, Inc. Control of wafer surface charge during CMP
CN105462504A (zh) * 2015-12-11 2016-04-06 蓝思科技（长沙）有限公司 一种c向蓝宝石抛光液及其制备方法
US11466384B2 (en) 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
WO2021162727A1 (en) 2020-02-11 2021-08-19 SLT Technologies, Inc Improved group iii nitride substrate, method of making, and method of use
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
US12091771B2 (en) 2020-02-11 2024-09-17 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
JP2025510124A (ja) * 2022-03-22 2025-04-14 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 負に帯電したシリカ粒子、かかる粒子を製造する方法、かかる粒子を含む組成物、およびかかる粒子を使用する化学的機械的研磨の方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221497A (en) * 1988-03-16 1993-06-22 Nissan Chemical Industries, Ltd. Elongated-shaped silica sol and method for preparing the same
US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
TWI296006B (https=) * 2000-02-09 2008-04-21 Jsr Corp
JP3804009B2 (ja) * 2001-10-01 2006-08-02 触媒化成工業株式会社 研磨用シリカ粒子分散液、その製造方法および研磨材
US20030118824A1 (en) * 2001-12-20 2003-06-26 Tokarz Bozena Stanislawa Coated silica particles and method for production thereof
DE10164262A1 (de) * 2001-12-27 2003-07-17 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen
US7153335B2 (en) * 2003-10-10 2006-12-26 Dupont Air Products Nanomaterials Llc Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole
KR100497413B1 (ko) * 2004-11-26 2005-06-23 에이스하이텍 주식회사 텅스텐-화학적 기계적 연마에 유용한 슬러리 및 그 제조방법
US7316977B2 (en) * 2005-08-24 2008-01-08 Air Products And Chemicals, Inc. Chemical-mechanical planarization composition having ketooxime compounds and associated method for use

Also Published As

Publication number Publication date
US8557006B2 (en) 2013-10-15
TW200819524A (en) 2008-05-01
US20120270401A1 (en) 2012-10-25
US8167684B2 (en) 2012-05-01
US20080096470A1 (en) 2008-04-24

Similar Documents

Publication Publication Date Title
TWI364451B (https=)
KR100946421B1 (ko) 폴리싱 슬러리 및 화학기계적 폴리싱 방법
JP3616802B2 (ja) スラリー組成物およびそれを用いる化学機械的研磨方法
TW575645B (en) Acidic polishing slurry for the chemical-mechanical polishing of SiO2 isolation layers
TWI343944B (en) Cmp slurry, preparation method thereof and method of polishing substrate using the same
CN1849379B (zh) 用于化学机械抛光的磨料颗粒
CN100569882C (zh) 用于铜的化学机械平坦化的浆料和方法
JP2003109921A (ja) 研磨用シリカ粒子分散液、その製造方法および研磨材
TW200400239A (en) Composition for the chemical mechanical polishing of metal and metal/dielectric structures
JP2006060205A (ja) スラリー組成物、その製造方法、及びこれを用いた加工物の研磨方法
TW201940644A (zh) 化學機械研磨用組成物及研磨方法
JP3668647B2 (ja) 半導体ウエハ基板の再生法および半導体ウエハ基板再生用研磨液
JP6251765B2 (ja) 研磨スラリー及びこれを用いた基板の研磨方法
TW456017B (en) Non-selective slurries for chemical mechanical polishing of metal layer and method for manufacturing thereof, and method for forming plug in insulting layer on wafer
KR102415696B1 (ko) 연마 슬러리 조성물
JP4756814B2 (ja) ルテニウムｃｍｐ用溶液及びこれらを利用するルテニウムパターン形成方法
TW201942317A (zh) 化學機械研磨用組成物及研磨方法
JP3840343B2 (ja) 半導体装置の製造に用いる化学機械研磨用水系分散体及び半導体装置の製造方法
JPH10172937A (ja) 研磨用組成物
KR101279966B1 (ko) 금속 배선 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
CN101220255B (zh) 化学机械研磨浆液与化学机械平坦化方法
JPH10172936A (ja) 研磨用組成物
JP2009206148A (ja) 研磨用組成物
JPH10172935A (ja) 研磨用組成物
JP2007500943A (ja) 銅を化学的機械的に平滑化するためのスラリーおよび方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees