TWI363439B - - Google Patents
Download PDFInfo
- Publication number
- TWI363439B TWI363439B TW97133252A TW97133252A TWI363439B TW I363439 B TWI363439 B TW I363439B TW 97133252 A TW97133252 A TW 97133252A TW 97133252 A TW97133252 A TW 97133252A TW I363439 B TWI363439 B TW I363439B
- Authority
- TW
- Taiwan
- Prior art keywords
- emitting diode
- vertical
- film
- light
- electrode unit
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 43
- 239000013078 crystal Substances 0.000 claims description 39
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 241000238631 Hexapoda Species 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 11
- 230000000694 effects Effects 0.000 claims description 11
- 230000000717 retained effect Effects 0.000 claims description 10
- 230000014759 maintenance of location Effects 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- 238000005553 drilling Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 241000270295 Serpentes Species 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 230000008719 thickening Effects 0.000 claims 1
- 230000008569 process Effects 0.000 description 17
- 238000005253 cladding Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 210000004508 polar body Anatomy 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 241000282326 Felis catus Species 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 241000239226 Scorpiones Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000007567 mass-production technique Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Landscapes
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW97133252A TW201010135A (en) | 2008-08-29 | 2008-08-29 | Method to fabricate the vertical-conduction type LED, and product thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW97133252A TW201010135A (en) | 2008-08-29 | 2008-08-29 | Method to fabricate the vertical-conduction type LED, and product thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201010135A TW201010135A (en) | 2010-03-01 |
TWI363439B true TWI363439B (enrdf_load_stackoverflow) | 2012-05-01 |
Family
ID=44828076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW97133252A TW201010135A (en) | 2008-08-29 | 2008-08-29 | Method to fabricate the vertical-conduction type LED, and product thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW201010135A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102723415A (zh) * | 2012-06-25 | 2012-10-10 | 钟伟荣 | 一种倒装型高压交/直流发光二极管及其制作方法 |
-
2008
- 2008-08-29 TW TW97133252A patent/TW201010135A/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW201010135A (en) | 2010-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101501307B1 (ko) | 발광 장치 제작 방법 | |
KR100638730B1 (ko) | 수직구조 3족 질화물 발광 소자의 제조 방법 | |
TWI322516B (en) | Ac light emitting device having photonic crystal structure and method of fabricating the same | |
TWI419355B (zh) | 高光取出率的發光二極體晶片及其製造方法 | |
JP4852755B2 (ja) | 化合物半導体素子の製造方法 | |
KR20110097011A (ko) | 하이브리드 발광다이오드 칩과 이를 포함하는 발광다이오드 소자 및 이의 제조방법 | |
JP2007305999A (ja) | 垂直構造窒化ガリウム系led素子の製造方法 | |
TW201039463A (en) | Double-face coarsened vertical conducted light emitting diode and manufacturing method thereof | |
JP2007013093A (ja) | 発光ダイオード | |
WO2017092451A1 (zh) | 发光二极管芯片及其制作方法 | |
JP2013201455A (ja) | 発光素子 | |
TW201125157A (en) | Method of manufacturing semiconductor light-emitting chip and semiconductor light-emitting chip | |
TWI363439B (enrdf_load_stackoverflow) | ||
CN106876547A (zh) | 薄膜型发光二极管及其制作方法 | |
TWI427821B (zh) | Method for fabricating planar conduction type light emitting diodes with thermal guide substrate | |
TWI618264B (zh) | 光電元件及其製造方法 | |
TWI355760B (enrdf_load_stackoverflow) | ||
TWI431823B (zh) | Production method and finished product of light emitting diode grain element with microlens | |
TW201228033A (en) | Light emitting diode chip structure and fabrication method thereof | |
US10396246B2 (en) | Optoelectronic device and method for manufacturing the same | |
TWI669834B (zh) | 光電元件及其製造方法 | |
TWI625869B (zh) | 光電元件及其製造方法 | |
US20110037090A1 (en) | Light emitting diode | |
TWI721501B (zh) | 光電元件及其製造方法 | |
TWI488295B (zh) | 發光二極體陣列與其形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |