1362908 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種配線膜間連接用構件，更詳而言 之，係有關於一種適用於使用包含銅之金屬凸塊進行多層 配線基板之配線膜間連接時之配線膜間連接用構件及其製 造方法》 【先前技術】 進行多層配線基板之配線膜間連接的方法之一係例如有 使用包含銅之凸塊之方法。 然後，於日本特願2002-233778中係提出一種配線膜間 連接用構件及其製造方法，其提出内容並於日本特開 2003-309370號公報中公開，該配線膜間連接用構件作為 適用於使用於配線膜間連接以製造多層配線基板者，其係 於層間絕緣膜的樹脂薄膜中埋設配置有連接多層配線基板 之配線膜間的例如錐狀火山狀的金屬凸塊》 [專利文獻1]日本特開2003-309370號公報（特願2002-233778) [發明欲解決之問題] 因此’若依上述先前方法，可提供一種可一次將所要的 層數重疊一起加壓，或可以比蝕刻抗蝕圖案的間距的界限 更小的間距配置凸塊’或者可於絕緣膜的兩側藉著半添加 法（semi-additive)形成微細的配線圖案，或即使提高凸塊 亦可維持微細間距之配線膜間連接用構件。 但是，若依先前技術’則有被積層於經貫通狀形成金屬 I04748.doc 龙的層間絕緣膜的兩面且電性連接於上述金屬凸塊的上 面、下面的包含銅之金屬層與該金屬凸塊的上面、下面的 連接信賴性不易進—步提高的問題。 因為依照4間絕緣膜的厚度與金屬凸塊的高度的關係， 連接I·生會變得不足’於層間絕緣膜與配線膜形成用金屬層 之間產生間隙’其結果為與層間絕緣膜有關的信賴性變得 不足。 又，作為金屬凸塊的材料雖然使用包含銅的金屬層（銅 V白）’但由於先前作為該金屬層係使用包含以氧元素為首 的雜質7L素的銅，故有金屬凸塊與包含銅的配線膜形成用 金屬層的連接信賴性不足的問題。 然後，该問題與配線基板的長期信賴性下降有關，成為 一重要問題。 又，於搬送配線膜間連接用構件的過程中，亦有金屬凸 塊由薄膜狀的層間絕緣膜脫落之情形。即，金屬凸塊因為 以貫通薄膜狀的層間絕緣膜的狀態被保持，故無法由上或 下按壓金屬凸塊8，因此很容易脫離。 【發明内容】 本發明係為了解決上述問題而完成者，其目的係提供一 種可提咼金屬凸塊與後續積層的配線膜形成用金屬層之間 的連接信賴性，且可確保配線板的平坦性，同時金屬凸塊 不易脫離之配線膜間連接用構件及其製造方法。 [解決問題之方法] 請求項1之配線膜間連接用構件係於層間絕緣膜中埋設 104748.doc 1362908 配置有複數的金屬凸塊’該複數的金屬凸塊係由銅所構成 且呈上面的截面積比下面的截面積小的柱狀，用以連接多 層配線基板的配線膜之間，且其至少一端由層間絕緣膜突 出者，且，上述層間絕緣膜的上面係彎曲成與上述金屬凸 塊相接的部份較高’愈遠離該金屬凸塊則愈低狀。 。月求項2之配線膜間連接用構件係於層間絕緣膜中埋設 配置有複數的用以連接多層配線基板的配線膜之間且其一 Φ 端或兩端由層間絕緣膜突出的由銅構成的金屬凸塊者， 且’構成上述金屬凸塊的銅的純度係99.9%以上，上述各 金屬凸塊由層間絕緣膜側的突出量的總和係15〜45 μιη，上 述各金屬凸塊的上面及下面的平均表面粗度係〇5 μιη以下 的粗度。 請求項3之配線膜間連接用構件係如請求項1或2之配線 膜間連接用構件，其中前述層間絕緣膜係具有於作為芯材 _ 的非熱可塑性膜的兩面形成熱可塑性聚醯亞胺樹脂膜之三 層構造’上述各熱可塑性聚醯亞胺樹脂膜的膜厚係1〜8 μπι 〇 請求項4之配線膜間連接用構件係如請求項3之配線膜間 連接用構件，其中前述非熱可塑性膜由非熱可塑性聚醯亞 胺樹脂膜構成，其膜厚係1 〇〜7〇 。 請求項5之配線膜間連接用構件，其中前述層間絕緣膜 由玻璃基材的環氧樹脂膜構成，其膜厚係3〇〜8〇 μηι。 請求項6之配線膜間連接用構件之製造方法係具有以下 104748.doc 1362908 /驟者’ Μ ·光阻膜形成步驟’係於經積層承載層的由銅 構成的凸塊形成用金屬層的與經積層該承載層的面相反的 面形成預定圊案的光阻膜者；金屬凸塊突設步驟，係藉著 以上述光阻膜作為遮罩將前述凸塊形成用金屬層钱刻，而 成為於前述承載層突設有柱狀的複數的金屬凸塊之狀態 者’·光阻膜去除步驟，係去除上述光阻膜者；層間絕緣膜 加壓步驟’係將層間絕緣膜由上述金屬凸塊的上面側被該 金屬凸塊貫通地加壓於上述金屬凸塊者；加壓步驟，係由 上面側加壓者；凸塊頂面露出步驟，係藉著研磨上述層間 絕緣膜，使凸塊頂面露出者；及承載層去除步驟，係去除 上述承載層者；且，上述凸塊形成用金屬層係由純度 99.9%以上的銅構成，其上面及下面的平均表面粗度係μ μηι以下的粗度。 請求項7之配線膜間連制構件之製造方法係具有以下 步驟者’即：光阻膜形成步驟’係於經積層承載層的由銅 構成的凸塊形成用金屬層的與經積層該承载層的面相反的 面形成預定圖案的光阻膜者；金屬凸塊突設步驟，係藉著 以上述光阻膜作為遮罩將前述凸塊形成用金屬層勉刻，而 成為於前述承載層突設有柱狀的複數的金屬凸塊之狀雜 者；光阻膜去除步驟’係去除上述光阻膜者；層間絕緣膜 加堡步驟，係將層間絕緣膜由上述金屬凸塊的上面側加壓 於上述金屬&塊者.；凸塊頂面露出步驟，係藉著研磨上述 層間絕緣膜’使凸塊頂面露出者；及承載潜去除步驟，係 去除上述承„者；且，上料載㈣使用於承載薄膜上、 104748.doc 1362908 經形成具有一被照射uv光（紫外線）黏著力就會下降的性質 之接著層者，且於上述光阻膜去除步驟之後、上述層間絕 ； 緣膜加麼步驟之前係具有承載層黏著力下降步驟，該承載 ； 層黏著力下降步騾係由金屬*塊側對上述承載層照射u v 光，使該承載層的黏著力下降者，進而，於上述承載層去 除步驟時或之前係由承載層側照射uv光。 請求項8之配線膜間連接用構件之製造方法係如請求項6 • 或7之配線膜間連接用構件之製造方法，其中前述層間絕 ' 緣膜係具有於作為芯材的非熱可塑性膜的兩面經形成熱可 塑性聚醯亞胺樹脂膜或環氧改質樹脂膜之三層構造，上述 熱可塑性聚酿亞胺樹脂膜或環氧改質樹脂膜每面的膜厚係 1〜8 μηι。 請求項9之配線膜間連接用構件之製造方法係如請求項8 之配線膜間連接用構件之製造方法，其中前述作為芯材的 非熱可塑性膜係由非熱可塑性聚醯亞胺樹脂膜構成，其膜 _ 厚係10〜65 μιη。 凊求項1 0之配線膜間連接用構件之製造方法係如請求項 6或7之配線膜間連接用構件之製造方法’其中前述層間絕 .緣膜由玻璃環氧構成’其膜厚係3〇〜1〇〇 μπι ^ , 請求項11之配線膜間連接用構件之製造方法係如請求項 6、7 ' 8、9或10之配線膜間連接用構件之製造方法，其中 前述承載層的前述樹脂薄膜係使用厚度25〜5〇 μιη的聚薄 膜構成者，接著劑則係使用厚度2〜1 〇 μιη、初期黏著力 10〜30 N/25 mm、UV光（紫外線）照射後黏著力〇 〇5〜〇 15 104748.doc 1362908 N/25 mm者。 [發明效果] 依請求項1之配線膜間連接用構件，層間絕緣膜其上面 係具有彎曲成與上述金屬凸塊相接的部份較高，愈遠離該 金屬凸塊則愈低之形狀，可提高金屬凸塊的保持力。因為 層間絕緣膜具有彈性’故藉著使該膜與凸塊相接的部份沿 著凸塊的側面彎曲，具有以膜的彈性力壓入凸塊的效果， 可防止金屬凸塊的脫落所故。 因此，可消除金屬凸塊由配線膜間連接用構件脫離之問 題。 « 依請求項2之配線旗間連接用構件，構成金屬凸塊的銅 的純專係99.9%尚’因為不使用過去的包含以氧元素為首 的雜質元素的銅作為金屬凸塊形成用銅材料，而使用高純 度的銅’故可改善連接信賴性不足的問題。 然後，各金屬凸塊由層間絕緣膜突出的端（上端及下端） 的突出量的總和因為係15 μπι以上，故可進行後續被積層 於配線膜間連接用構件兩面的銅等的配線膜形成用金屬層 與各金屬凸塊的充分地壓接，使連接更加確實。 因為金屬凸塊由層間絕緣膜突出的上端及下端的突出量 的總和為小時’由於金屬凸塊的突出量很少，故無法藉著 上述積層用的加壓進行充分的壓接，有連接不完全之虞， 又’雖然於表面設有凹部，有損及平坦性之虞，但依照各 種的實驗，為15 μπι以上時不會有此顧慮，可得到具有作 賴性的連接。 I04748.doc iJ629〇8 又’上述突出量的總和因為係45 μιη以下，故於積層層 間絕緣膜與後續的配線膜形成用金屬層時，不會有損及配 線膜間連接用構件的表面平坦性之虞。 因為上述突出量的總和大時，於具有金屬凸塊的部份於 後續的步驟積層配線膜形成用金屬層時，配線膜形成用金 屬層不會於凸塊部完全地被擠扁，而成隆起狀，配線基板 的平坦性變差’於搭載特別要求平坦性的裸IC、LSI等的 • 配線基板等中會成為不容忽視的問題，但依照各種實驗， 為45 μιη以下時不會有此顧慮，可將凸塊完全地擠扁，且 不會有損及平坦性之虞。 然後，因為上述各金屬凸塊的上面及下面的平均表面粗 度係0.5 μιη以下的表面粗度，故不會有後續積層配線膜形 成用金屬層時與該金屬層之間存在微細空隙之虞，並且可 建立高信賴性的連接性。又，平均表面粗度為0.5 μηι以下 的表面粗度可藉著將金屬凸塊形成用的例如銅等金屬層以 ® 壓延形成而輕易實現。 依請求項3之配線膜間連接用構件’因為層間絕緣膜係 具有於構成芯材部份的非熱可塑性膜的兩面形成熱可塑性 聚醯亞胺樹脂膜或環氧改質樹脂膜之三層構造，故可藉著 構成芯材部份的非熱可塑性聚醯亞胺樹脂膜確保凸塊的保 持力。 然後，因為於兩面具有熱可塑性聚醯亞胺樹脂膜或環氧 改質樹脂膜，故可確保與積層於兩面的配線膜形成用金屬 層的接著上所必要的接著力。 104748.doc 然後，熱可塑性聚醯亞胺樹脂膜或環氧改質樹脂膜的厚 度因為係1 μπι以上，故可吸收積層於兩面的例如由銅構成 的配線膜形成用金屬層的表面凹凸，不會有積層後該配線 膜形成用金屬層與金屬凸塊之間存在有間隙之虞。 即，熱可塑性聚醢亞胺樹脂膜的厚度愈薄，就無法完全 吸收於後續被積層於配線膜間連接用構件的配線膜形成用 金屬層的表面的凹凸，配線膜形成用金屬層與層間絕緣膜 之間無法得到充分地密著《但’依照實驗，熱可塑性聚醯 亞胺樹脂膜的厚度有1 μπι以上時，於配線膜形成用金屬層 與層間絕緣膜之間可得到充分地密著。 又，熱可塑性聚醯亞胺樹脂膜的厚度因為係8 μπι以下， 故可充分地確保作為後續積層的配線膜形成用金屬層的下 層所必要的強度、硬度。 因為熱可塑性聚醯亞胺樹脂膜愈厚，雖然可確保與配線 膜形成用金屬層的接著力，但有使作為配線板的基材所必 須的強度、硬度下降的問題，依照實驗，熱可塑性聚酿亞 胺树知膜或環氧改質樹脂膜的厚度為8 pm以下時，經確認 可確保作為後續積層的配線板的基材所必須的強度、硬 度。 依請求項4之配線膜間連接用構件’因為構成層間絕緣 膜的芯材的非熱可塑性膜係由非熱可塑性聚醯亞胺樹脂膜 構成，且其膜厚1〇 μπι以上，故可充分地確保必要.的強 度非熱可塑性聚酿亞胺樹脂膜因為係财熱性良好，機械 強度亦良好的樹脂，故以1 〇 μηι以上的厚度可充分確保作 I04748.doc 13 1362908 為配線膜間連接用構件所必須的強度。 又’構成該芯材的非熱可塑性聚醯亞胺樹脂膜的厚度因 為係70 μιη以下’故不須増加配線膜間連接用構件或使用 該配線膜間連接用構件的多層配線基板的厚度即可完成。 依請求項5之配線膜間連接用構件，因為構成層間絕緣 膜的芯材的非熱可塑性膜係由玻璃環氧樹脂構成，且其膜 厚30 μηι以上’故可充分地確保必要的強度。因為玻璃環 氧樹脂係耐熱性較好，且機械強度亦良好的樹脂，故以3〇 μιη以上的厚度可充分確保作為配線膜間連接用構件所必 須的強度。 又’構成該芯材的玻璃環氧樹脂膜的厚度因為係丨〇〇 μίη 以下’故不須增加配線膜間連接用構件或使用該配線膜間 連接用構件的多層配線基板的厚度即可完成。 依請求項6之配線膜間連接用構件之製造方法，因為藉 著於承載層積層凸塊形成用金屬層’將該凸塊形成用金屬 層以經圖像化的光阻膜作為遮罩選擇性地蝕刻，形成金屬 凸塊後’將上述光阻膜去除，將層間絕緣膜重疊於上述承 載層，使該層間絕緣膜被該金屬凸塊貫通，然後，將該承 載層去除，而可得到配線膜間連接用構件，且因為該凸塊 形成用金屬層係銅純度99 9%以上，因此，於使用配線膜 間連接用構件構成多層的配線基板時，可達成缺陷很少的 連接，進行具有信賴性的電連接。 ‘ J後凸塊形成用金屬層其兩面的平均表面粗度係〇 5 μιη以下的表面粗度，故可使各金屬凸塊的上面及下面成 104748.doc 1362908 為平均表面粗度0.5 μπι以下的表面粗度。 因此，於後續經積層配線膜形成用金屬層時的與該金屬 ； 層的接合面中，可使缺陷部份變少，且可進行更高信賴性 . 的連接’進而提高連接的信賴性》 Λ 依請求項7之配線膜間連接用構件之製造方法，因為使 用藉著UV光黏著力就會下降的承載層，然後於去除承載 層之前或去除時對承載層照射UV光，故可進一步減弱去 φ 除承載層所必須的剝除力。 • 因此，可不須對配線膜間連接用構件施加很大的力即可 將承載層去除，且不會有因承載層的去除而使配線膜間連 接用構件彎曲變形之虞。 依請求項8之配線膜間連接用構件之製造方法，層間絕 緣膜因為具有於構成芯材部份的非熱可塑性膜的兩面形成 熱可塑性聚醯亞胺樹脂膜或環氧改質樹脂膜之三層構造， 故如前所述可藉著構成芯材部份的非熱可塑性聚酿亞胺樹 • 脂膜確保凸塊的保持力》 然後’因為於兩面具有熱可塑性聚醯亞胺樹脂膜或環氧 改質樹脂膜’故可確保與積層於兩面的配線膜形成用金屬 «層的接著上所必須的接著力。 _ 然後’熱可塑性聚醯亞胺樹脂膜或環氧改質樹脂膜的厚 度因為係1 μπι以上，故可吸收積層於兩面的例如由銅構成 的配線膜形成用金層層的表面凹凸，不會有積層後該配線 膜形成用金屬層與金屬凸塊之間存在有間隙之虞。 又’熱可塑性聚醯亞胺樹脂膜的厚度因為係8 μπι以下， 104748.doc 1362908 故可充分地確保作為後續積層的配線膜形成用金屬層的下 層所必要的強度、硬度。 依請求項9之配線膜間連接用構件之製造方法，因為構 成層間絕緣膜的芯材的非熱可塑性樹脂膜係使用非熱可塑 性聚醯亞胺樹脂膜，且該膜的厚度i 〇 μιη以上，故可充分 地確保必要的強度。然後，因為該膜的厚度係65 以 下，故可具有不須增加配線膜間連接用構件或使用該配線 'Φ 膜間連接用構件的多層配線基板的厚度即可完成之效果。 . 依請求項10之配線膜間連接用構件之製造方法，因為層 間絕緣膜使用玻璃環氧樹脂膜，且該膜的厚度30 上，故可充分地確保必要的強度。然後，該膜的厚度因為 係100 μιη以下，故可具有不須增加配線膜間連接用構件或 使用該配線膜間連接用構件的多層配線基板的厚度即可完 成之效果。 依請求項11之配線冑間連接用構件之製造方法，因為穿 述承载層的前述樹脂薄膜係使用厚度25〜5〇 4〇1者，接著齊 則使用厚度2〜10 μηι、初期黏著力1〇〜3〇 Ν/25 夫 (紫外線m射後黏著力G.G5〜G.15 Ν/25 _者，故具有於承 載層為必要時不會由配線膜間連接用構件剝離的足夠的黏 :力，於必須去除承載層而進行剝離時則可充分地減弱黏 著力’不須报大的力即可剝離。 【實施方式】 本發明配線膜間連接用諶丛+ & „ 籌件之第1最佳形態係於層間絕 緣膜中埋設配置有複數的由铜所構成且呈上面的截面積比 104748.doc •16· 下面的截面積小的柱狀，並且其至少一端由層間絕緣膜突 出的金屬凸塊者’且，上述層間絕緣膜的上面係彎曲成與 上述金屬凸塊相接的部份較高，愈遠離該金屬凸塊則愈低 狀。 該配線膜間連接用構件係藉著準備經接著承載層的鋼構 成的凸塊形成用金屬層，將該凸塊形成用金屬層以光蝕刻 圖像化’而形成金屬凸塊，於該承載層的金屬凸塊形成面 被該各金屬凸塊貫通地積層層間絕緣膜後，藉著去除承載 層而獲得。 金屬凸境或構成凸塊形成用金屬層的銅，其純度宜為 99.9%以上’又’層間絕緣膜宜使用三層構造者，即，具 有作為芯材的非熱可塑性聚醯亞胺樹脂膜，以保持作為配 線膜間連接用構件的強度，且於構成該芯材的非熱可塑性 聚醯亞胺樹脂膜的兩面形成熱可塑性聚醯亞胺樹脂膜，以 得到與積層於配線膜間連接用構件兩面的配線膜形成用金 屬層的接著力。 兩面的熱可塑性聚醯亞胺樹脂膜的厚度以1〜8 μιη為佳。 於此，使用環氧改質的接著劑取代熱可塑性聚醢亞胺樹脂 膜亦可得到相同效果。 又’構成芯材的非熱可塑性聚醯亞胺樹脂膜以非熱可塑 性聚醯亞胺樹脂膜或玻璃環氧樹脂膜為佳。構成芯材的非 熱可塑性聚醯亞胺樹脂膜使用非熱可塑性聚醯亞胺樹脂膜 時，其膜厚以1 0〜65 μπι為佳。又，於使用玻璃環氧樹脂膜 時，其膜厚以30〜100 μιη為佳。 104748.doc -17- 1362908 又’於配線膜間連接用構件的製造過程中，用以搭載凸 塊形成用金屬層的承載層以使用其黏著力會因uv光而下 降者為佳。具體而言’接著劑宜使用厚度2〜1〇 μπι、初期 黏著力10〜30 N/25 mm、UV光（紫外線）照射後黏著力 0.05〜0.15 N/25 mm者為佳。 [實施例1] 以下，基於圖示的實施例詳細地說明本發明。 圖1(A)〜(F)係顯示第1實施例，將多層配線基板的形成方 法依照步驟順序顯示之截面圖。 (A)首先’準備於銅構成的凸塊形成用金屬層2的一側的 主面經接著承載層4者，於該凸塊形成用金屬層2的另一側 的主面形成光阻膜6，藉著對該光阻膜6施予曝光、顯影處 理，將s玄光阻膜6圖像化。圖1 (A)係顯示該光阻膜6的圖像 化後的狀態。 上述凸塊形成用金屬層2可使用銅純度99 9%以上的高純 度的脫氧銅。藉此，若使用高純度者，於配線膜間連接用 構件完成後，於該配線臈間連接用構件的兩面積層由銅構 成的配線膜形成用金屬層時，可將金屬凸塊與配線膜形成 用金屬層以缺陷少的銅.銅接合相連接，得到極高信賴性 的連接性。 然後，使凸塊形成用金屬層2的表面粗度成為平均表面 粗度0.5 μιη以下。因為金屬凸塊的上下兩面的表面粗度愈 大，於配線膜間連接用構件完成後，於該配線膜間連接用 構件的兩面積層由銅構成的配線膜形成用金屬層時，於金 104748.doc • 18- 1362908 屬凸塊與配線臈形成用金屬層之間的接合面會無法填滿凹 凸，而殘留微細的缺陷，不易充份地確保連接的信賴性， :但平均表面粗度為〇.5 μηι以下時，於銅、銅的接合面幾乎 • 不會產生缺陷，可充份地得到高信賴性的連接性。 又，承載層4係於作為基材的厚度例如25〜5〇 μιη的樹脂 薄膜4a的一側的主面經形成黏著層仆者，該黏著層仆係使 用2著力會因UV曝光而下降者。具體而言，宜使用初期 • 黏著力1〇〜3〇 N/25 mm、UV曝光後的黏著力0,05〜〇.15 • N/25 mm者為佳。 使用黏著力藉UV曝光而下降者其原因為，承載層4於凸 塊蝕刻步驟等中為必要時具有凸塊不會脫落的足夠的黏著 力，於不需要承載層4，欲剝離時可以UV光充分地減弱黏 著力，使容易剥離。 又，令樹脂薄臈4a的厚度為25〜50 μηι的原因為，25 μιη 以下時，不易確保作為配線膜間連接用構件的強度，於各 籲種處理過程、搬送過程中容易產生變形等，50 μηι以上 時，於剝離承載層4時會對配線膜間連接用構件施加不必 要的變形，而使凸塊脫落乃至於配線膜間連接用構件殘留 > 殘留變形所故。 • 上述作為基材的樹脂薄膜4a及黏著層4b的寬度例如25 μηι厚，黏著層仆的厚度係2〜1〇 μπι。其原因為，2 μπι以下 時無法得到充份的黏著力，於選擇性地蝕刻凸塊形成用金 屬層2以形成金屬凸塊時’具有黏著層仆因藉著蝕刻加工 時的加壓液流或搬送時的機械應力而產生使金屬凸塊脫落 i04748.doc 19 1362908 等不良之虞，又，8 μηι以上時，黏著層4b過厚、發軟，不 適合作為金屬凸塊的下層，容易產生金屬凸塊的傾斜或位 . 移等。 (B)接著，如圖〗（B)所示，藉著以上述光阻膜ό作為遮 罩，钱刻由上述銅構成的凸塊形成用金屬層2，形成金屬 凸塊8。該金屬凸塊8成錐狀火山狀，愈往上側（金屬凸塊8 的頂面側）’其截面積愈小。 'φ (C)接著，如圖"C)所示，藉著由該金屬凸塊8形成側的 面對配線膜間連接用構件照射UV光，使上述承載層4的黏 著層4b的黏著力減低。 由金屬凸塊8形成側的面照射UV光係因為金屬凸塊8於 曝光時會成為遮罩，金屬凸塊8下面的黏著層不會被曝 光，可保持黏著力，又，未具有凸塊的部份因為黏著劑硬 化’故有助於金屬凸塊8的固定。 (〇)接著，如圖1 (D)所示，使層間絕緣膜1 〇及由合成樹脂 • 等構成的剝離片11面對配線膜間連接用構件的金屬凸塊8 形成側。該層間絕緣膜丨〇如圖2所示具有三層構造。 具體而言’係以非熱可塑性聚醯亞胺樹脂膜l〇a作為芯 材’於其兩主面形成熱可塑性聚醯亞胺樹脂膜1〇b、i〇b 者’構成該芯材的非熱可塑性聚醯亞胺樹脂膜l〇a的膜厚 係1 0〜50 μπι，兩主面的熱可塑性聚醯亞胺樹脂膜丨〇b、1 〇b 的膜厚係1〜8 μηι。 7層間絕緣膜的構成芯材的非熱可塑性聚酿亞胺樹脂膜 的厚度為1 0〜5 0 μηι的原因係，1 〇 μιη以上的厚度時可充分 104748.doc -20· 1362908 地確保作為配線膜間連接用構件所必須的強度，又，因為 厚度為50 μιη，故可於不會無用地增厚配線膜間連接用構 件或使用該配線膜間連接用構件的多層配線基板的厚度下 完成® 又，令兩主面的熱可塑性聚醯亞胺樹脂膜l〇b、10b的膜 厚為1〜8 μιη的理由如下。即，熱可塑性聚醯亞胺樹脂膜薄 時，無法得到於配線膜間連接用構件完成後與用以積層於 兩面的例如銅構成的配線膜形成用金屬層之間所必須的密 著力。但是，依照實驗，其厚度為i μιη以上時，能得到與 積層於兩面的例如銅構成的配線臈形成用金屬層之間必須 的密著力。 又，熱可塑性聚醯亞胺樹脂膜10b過厚時，會使成為芯 材的非熱可塑性聚醢亞胺樹脂的強韌特性、優異的電氣特 性下降，因此，該熱可塑性聚醯亞胺樹脂只要是必要的最 低量即可。 (E) 接著，如圖1(E)所示，將層間絕緣膜1〇與剝離片"由 上面經由緩衝材（圖中未示）加壓，使層間絕緣膜1〇與剝離 片11依照承載膜及金屬凸塊8的形狀地密著。此時，藉著 加熱加壓’可更有效地使其密著。 (F) 接者’如圖1(F)所示’由剝離片u的上面開始，優先 地研磨突出部，研磨$ ^^ & ♦ ^磨主略刹離片面。藉此，使金屬凸塊8 頂面露出。再者，使用可連續地研磨的滾輪研磨機等取代 磨刀石亦可。 藉此’層間絕緣膜ΐθ自然如圖1(F)所示，成為其上面弯 104748.doc •21- 1362908 曲成與金屬凸塊8相接的部份較高，愈遠離該金屬凸塊8則 愈低之形狀。 • 然後’藉著成為該形狀，可提高金屬凸塊保持力。層間 料膜因為具有彈性，故藉著使該膜與凸塊相接的部份沿 I ¥凸塊的側面f曲，具有以膜的彈性力壓入凸塊的效果， 可防止金屬凸塊的脫落。 又’於此狀態下’由鋼構成的各金屬凸塊8由廣間絕緣 φ 膜10突出的突出量必須為15〜45 μιη。 . 其理由如下所述。 即，各金屬凸塊8由層間絕緣膜1〇的突出量過小時，因 於配線膜間連接用構件積層配線膜形成用金屬層時的加壓 而使金屬凸塊8縮小的量無法藉著金屬凸塊8的突出量充份 地相抵消，有連接不完全之虞。又，有於表面形成凹部， 損及平坦性之虞。 但是，依各種實驗，15 μηι以上時不會有該顧慮，能得 • 到具有信賴性的連接。此即為突出量為15 μιη以上的理 由。 又，上述突出量過大時，具有金屬凸塊的部份於後續的 ，步驟積層配線膜形成用金屬層時，配線膜形成用金屬層不 ，會於凸塊部完全地被擠扁，而成隆起狀，配線基板的平坦 性變差’於搭載特別要求平坦性的裸IC、LSI等的配線基 板等中會成為不容忽視的問題，但依照各種實驗，為45 μηι以下時不會有此顧慮，可將凸塊8完全地擠扁，且不會 有損及平坦性之虞。此係使突出量為4 5 μηι以下的理由。 104748.doc •22· !3629〇8 又’使金屬凸塊8由層間絕緣膜1 〇突出的突出量為丨5〜45 μηι可藉著使凸塊形成用金屬層2的厚度比層間絕緣膜1〇厚 1 5〜45 μιη而達成。 (G)接著’由承載片側再度照射υν光，使凸塊部的黏著 層硬化’使其黏著力下降之後，將承載層4及剝離片丨j剝 離。藉此，如圖1(G)所示，完成配線膜間連接用構件。 再者，承載層4的黏著層4b因為黏著力會藉著前述UV光 的照射而下降’故可以弱的剝離力進行承載層4的剝離。 因此’可預先防止剝離承載層4時因施加強力而使配線膜 間連接用構件變形之問題。 再者’剝離片藉著使用聚乙烯、聚丙烯等不會接著於任 何樹脂的薄膜，而可輕易剝離。 又’可將剝離作業與UV光照射一同進行。即，可藉著 一面照射UV光一面進行剝離作業而圖謀作業時間的縮 短、製造成本的減低。 (變形例） 又’於上述實施例中’使用玻璃環氧樹脂膜作為層間絕 緣膜10亦可。 此時’玻璃環氧樹脂膜的厚度必須於30〜100 μηι。 圖3(Α)、（Β)係依照步驟順序顯示使用圖1(F)所示的配線 膜間連接用構件製造二層的配線基板之方法之截面.圖。 (Α)如圖3(A)所示，於配線膜間連接用構件的兩面重疊配 線膜形成用金屬層12、12，藉著加壓及加熱強固地積層。 (Β)接著’藉著將上述配線膜形成用金屬層12、12光餘刻 104748.doc • 23- 1362908 而圖像化。藉此，如圖3(B)所示，形成由鋼構成的配線膜 14 〇 • [實施例2] ； 圖4(A) (G)係依照順序顯示本發明之第2實施例之配線 基板之製造方法之步驟之截面圖。 (A)首先，如圖4(a)所示，準備於層間絕緣膜1 〇上經積層 上模具80者。該上模具8〇係由金屬（例如sus等）或樹脂構 Φ 成具有與後述的金屬凸塊（8、8、…）相對應的凸塊對應 • 孔82、82、...。又，該凸塊對應孔82、82、…可藉著例如 於被接著於層間絕緣膜1 〇上的上模具80上塗佈光阻劑，藉 著將該光阻劑曝光及顯影而圖像化後作為遮罩膜，以由該 光阻劑構成的遮罩膜作為遮罩將上模具8〇蝕刻而形成。 且，上模具80的凸塊對應孔82、82、.·.的形成可於未將上 模具80接著於層間絕緣膜10上的階段進行》 (B)接著’如圖4(B)所示’準備於金屬（例如等）或樹 • 脂構成的下模具84上經形成金屬凸塊8的配線膜間連接用 構件17b，將上述上模具8〇以層間絕緣膜1〇朝下的狀態， 且與各凸塊對應孔82、82、…相對應的金屬凸塊8位置相 對準地進行定位、面對於該構件17b的凸塊8形成面的上 方。 (c)接著’如圖4(c)所示’將上述上模具8〇朝上述下模具 8 4側加壓’成為上述層間絕緣膜10被金屬凸塊8貫通的狀 態。又’因為藉著該貫通會產生樹脂的屑、渣等，會污染 層間絕緣膜1 〇的表面’故宜於該加壓步驟完成後進行清 104748.doc •24- 1362908 潔。 (D)接著’如圖4(D)所示，將上模具100去除。 •· (E)接著’如圖4(E)所示，將下模具84去除》 . 藉此，完成配線膜間連接用構件。該配線膜間連接用構 件係不使用承載層4而使用模具84而製成。 因此，可不使用承載層4製造配線膜間連接用構件。 再者，於如圖1(F)所示的配線膜間連接用構件的兩面形 • 成配線膜上，必須形成配線形成用金屬層，將其以圖 . 4(F)、（G)所示步驟進行。 (F) 接著，如圖4(F)所示，使由銅構成的配線膜形成用金 屬層23、23面對被金屬凸塊8貫通的層間絕緣膜1〇的兩 面。 (G) 然後，將該配線膜形成用金屬層23、23加熱加壓於該 層間絕緣膜1〇相積層。藉此，完成配線基板丨ld。 圖5(A)、（B)係依照步驟順序顯示使用本發明配線膜間 • 連接用構件之多層配線基板之製造方法。該實施例係以全 體加壓將多層配線基板41以一回的積層加壓形成。 (A) 首先’於例如4片的各兩面配線基板42〜45之間配置3 月的各配線膜間連接用構件46〜48(圖5(A))。 (B) 接著，將其等以高溫一起加壓。藉此，完成多層配線 基板41(圖5(B))。 此時，4片的各兩面配線基板42〜45可藉著實行第i實施 例的王。卩步驟，進而進行配線膜形成用銅箔2 3的圖像化而 形成，3片的各配線膜間連接用構件46〜48可藉著實行第^ I04748.doc -25- 1362908 實施例的一部份步驟（圖1(A)〜(F))而形成β [實施例3 ] 圖6係顯示本發明之第3實施例之配線膜間連接用構件之 截面圖。 圖1 (F)所示的前述實施例的配線膜間連接用構件，其金 屬凸塊（8)的形狀係錐狀火山狀，但不一定必須要錐狀火山 狀，例如如圖6所示，金屬凸塊62為圓柱狀，且截面積由 上面至下面皆相同亦可。 又，圖1(G)所示的前述實施例的配線膜間連接用構件， 其金屬凸塊（8)的底面與層間絕緣膜（1〇)的底面雖然係同一 面（位於同一平面上），但不限於此’如圖6所示的實施例 般，金屬凸塊62的上端部由層間絕緣膜6〇的上面突出，下 端部由層間絕緣膜6〇的下面突出亦可。 此時，金屬凸塊62由層間絕緣膜60上面的突出量為Α， 金屬凸塊62由層間絕緣膜6〇的下面的突出量為B，突出量 A與B的總和必須為！ 5〜45 μιΏ。 又，上述各點以外則與圖1(G)所示實施例的配線膜間連 接用構件相同。 屬凸塊的形狀除了則述各實施例外，可採用圓錐台 形、四角錐、算盤珠形等形狀例。 上述本發明之實施例，係專注於幾個配線膜間連接用構 件及其製造方法。但本發明亦可適用於微電子構件間相互 導電連接用之構件。可輕易適用於例如晶片載體、晶片測 試座、測試基板、中介物（interp〇ser)或電路板⑷ J04748.doc -26· 1362908 ~ panel)及其類似品等的晶片载體、電路板、或者其他之具 有由相互連接基板之至少一面突出之複數凸塊之該晶片載 體或相互連接之基板上使用之構件β如此之晶#載體、基 板或電子板中’該晶片載體或基板之一面或兩面之該金屬 凸塊的上面或下面係例如透過壓力接觸、或常設連接、金 屬焊接與其他微電子構件之接點暫時地相互連接亦可。 [產業上之可利用性] 本發明係有關於一種配線膜間連接用構件及其製造方 法，更詳而言之，係有關於一種可適用於使用由銅構成的 金屬凸塊進行多層配線基板之配線膜間連接時之配線膜間 連接用構件及其製造方法，具有一般的可利用性。 【圖式簡單說明】 圖1 (Α)〜(G)係依照步驟順序顯示本發明配線膜間連接用 構件之製造方法之第1實施例之截面圖，（G)係本發明配線 膜間連接用構件之第1實施例之截面圖。 圖2係使用於配線膜間連接用構件的製造上的層間絕緣 膜之截面圖。 圖3(A)、（Β)係依照步驟順序顯示使用圖1(F)所示的配線 膜間連接用構件之配線基板之製造方法之一例之截面圖。 圖4(A)〜(G)係依照步驟順序顯示本發明配線膜間連接用 構件之製造方法之第2實施例之截面圖。 圖5(A)、（B)係依照步驟順序顯示使用本發明配線膜間 連接用構件之多層配線基板之製造方法之截面圖。 圖6係顯示本發明之第3實施例之配線膜間連接用構件之 104748.doc -27- • - ·. ·ι — 4 -昼 .-—.—· -· 1362908 截面圖。 【主要元件符號說明】 2 凸塊形成用金屬層（銅） 4 承載層 * 4a 樹脂薄膜 4b 黏著層 8 金屬凸塊（銅） # 1〇 層間絕緣膜 10a 非熱可塑性聚醯亞胺樹脂膜 10b 熱可塑性聚醯亞胺樹脂膜 12 配線膜形成用金屬層 14 配線膜 60 層間絕緣膜 62 金屬凸塊（圓柱狀） • 9 104748.doc -28-1362908 IX. Description of the Invention: [Technical Field] The present invention relates to a member for connecting between wiring films, and more particularly to a multilayer wiring board suitable for use of a metal bump including copper. A member for connecting wiring films between the wiring films and a method for manufacturing the same. [Prior Art] One of the methods for connecting the wiring films of the multilayer wiring substrate is, for example, a method of using bumps including copper. In the Japanese Patent Application No. 2002-233778, a member for connecting between wiring films and a method for producing the same is proposed, and the present invention is disclosed in Japanese Laid-Open Patent Publication No. 2003-309370. In the resin film of the interlayer insulating film, a metal bump of, for example, a tapered volcano is disposed between the wiring films of the interlayer wiring film, and is used for the connection between the wiring films. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2003-309370 (Japanese Patent Application No. 2002-233778) [Problem to be Solved by the Invention] Therefore, if the above-mentioned prior methods are used, it is possible to provide a method in which the desired number of layers can be superimposed together at a time, or can be resisted by etching. The pitch of the etched pattern is narrower than the pitch of the bumps', or a fine wiring pattern can be formed by semi-additive on both sides of the insulating film, or a fine pitch wiring can be maintained even if the bump is raised. A member for connecting between films. However, according to the prior art, there is a layer formed in the through-formed metal I04748. The two sides of the interlayer insulating film of the doc are electrically connected to the upper surface of the metal bump, and the metal layer containing copper on the lower surface and the connection reliability of the upper surface and the lower surface of the metal bump are not easily improved. In accordance with the relationship between the thickness of the four insulating films and the height of the metal bumps, the connection I may become insufficient "a gap is formed between the interlayer insulating film and the metal layer for forming the wiring film". As a result, it is related to the interlayer insulating film. The reliability of the company becomes insufficient. Further, as a material of the metal bump, a metal layer containing copper (copper V white) is used. However, since copper which contains 7L of an impurity including an oxygen element is used as the metal layer, metal bumps and copper are contained. The connection reliability of the metal layer for wiring film formation is insufficient. Then, this problem is related to a decrease in the long-term reliability of the wiring substrate, and becomes an important problem. Further, in the process of transporting the members for connecting the wiring films, the metal bumps may be peeled off from the film-like interlayer insulating film. In other words, since the metal bump is held in a state of penetrating the film-shaped interlayer insulating film, the metal bump 8 cannot be pressed up or down, so that it is easily detached. SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object thereof is to provide a connection reliability between a metal bump and a metal layer for forming a wiring film which can be subsequently laminated, and to ensure flatness of a wiring board. A member for connecting between wiring films and a method for manufacturing the same, in which metal bumps are not easily separated. [Method for Solving the Problem] The member for wiring film connection of claim 1 is embedded in the interlayer insulating film 104748. Doc 1362908 is provided with a plurality of metal bumps. The plurality of metal bumps are made of copper and have a columnar shape with a smaller cross-sectional area than the lower cross-sectional area for connecting the wiring films of the multilayer wiring substrate, and At least one end thereof is protruded by the interlayer insulating film, and the upper surface of the interlayer insulating film is bent to be higher in a portion in contact with the metal bump. The lower the shape away from the metal bump, the lower the shape. . The interconnecting film connecting member of the second embodiment is formed of copper in which an interlayer insulating film is provided with a plurality of wiring films for connecting the multilayer wiring substrates, and a Φ end or both ends are protruded by the interlayer insulating film. The metal bumps, and the purity of the copper constituting the above metal bumps is 99. 9% or more, the sum of the amount of protrusion of each of the metal bumps on the interlayer insulating film side is 15 to 45 μm, and the average surface roughness of the upper surface and the lower surface of each of the metal bumps is 〇 5 μm or less. The member for connection between wiring films of claim 3 is the member for connection between wiring films of claim 1 or 2, wherein the interlayer insulating film has a thermoplastic polyimide layer formed on both surfaces of a non-thermoplastic film as a core material. The three-layer structure of the amine resin film is a film thickness of 1 to 8 μm of each of the above-mentioned thermoplastic polyimide film, and the member for connection between wiring films of claim 4 is the member for connection between wiring films of claim 3, The non-thermoplastic film is composed of a non-thermoplastic polyimide film, and has a film thickness of 1 〇 to 7 Å. The member for wiring film connection according to claim 5, wherein the interlayer insulating film is made of an epoxy resin film of a glass substrate, and has a film thickness of 3 Å to 8 μm. The manufacturing method of the member for wiring film connection of claim 6 has the following 104748. Doc 1362908 / 骤 ' 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光a film bumping step of forming a metal bump of the bump formation by using the photoresist film as a mask, and forming a plurality of metal bumps having a columnar shape on the carrier layer a state in which the photoresist film removal step removes the photoresist film; and an interlayer insulating film pressurization step of pressing the interlayer insulating film from the upper surface side of the metal bump by the metal bump to the metal a step of pressing; the pressing step is performed by the upper side; the top surface of the bump is exposed by polishing the interlayer insulating film to expose the top surface of the bump; and the removing step of the carrier layer is to remove the bearing The layer of the above-mentioned bump forming metal layer is made of a purity of 99. It is composed of 9% or more of copper, and the average surface roughness of the upper surface and the lower surface thereof is a thickness of μ μηι or less. The manufacturing method of the inter-wiring film connecting member of claim 7 has the following steps: that is, the photoresist film forming step is carried out by laminating the metal layer for bump formation composed of copper through the build-up carrier layer a surface of the layer opposite to the surface forming a predetermined pattern of the photoresist film; the metal bump protruding step is formed by etching the metal layer for forming the bump by using the photoresist film as a mask to form the carrier layer a columnar plurality of metal bumps are formed; a photoresist film removing step is to remove the photoresist film; and an interlayer insulating film is added to the upper side of the metal bump Pressurize the above metal & block. a step of exposing the top surface of the bump by exposing the interlayer insulating film 'to expose the top surface of the bump; and carrying the latent removing step to remove the above-mentioned supporter; and, the loading material (4) is used on the carrier film, 104748. Doc 1362908 is formed by forming an adhesive layer having a property that the uv light (ultraviolet light) is lowered by the illuminating light, and after the photoresist film removing step, the layer is completely separated; before the step of adding the film, there is a carrier layer adhesion a step of lowering the force of the layer; a step of lowering the adhesion of the layer by irradiating the carrier layer with uv light from the metal* block side, thereby lowering the adhesion of the carrier layer, and further, before or during the removal step of the carrier layer The carrier layer side illuminates the uv light. The manufacturing method of the member for connecting the wiring film of claim 8 is the manufacturing method of the member for wiring film connection of the item 6 or 7 which has the non-thermoplastic film as a core material. The two sides are formed into a three-layer structure of a thermoplastic polyimide film or an epoxy modified resin film, and the film thickness of each of the above thermoplastic polyimide resin film or epoxy modified resin film is 1 to 8 μηι . The manufacturing method of the member for connecting the wiring film of claim 9 is the manufacturing method of the member for wiring film connection of Claim 8, wherein the non-thermoplastic film as a core material is a non-thermoplastic polyimine resin film. The film has a thickness of 10 to 65 μm. The manufacturing method of the member for connection between wiring films of claim 10 is the manufacturing method of the member for connection between wiring films of claim 6 or 7, wherein the aforementioned interlayer is indispensable. The film is made of glass epoxy, and its film thickness is 3〇1 to 1〇〇μπι ^ , and the manufacturing method of the member for wiring film connection of claim 11 is the wiring film of claim 6, 7 '8, 9 or 10. In the method for producing an inter-connecting member, the resin film of the carrier layer is formed of a poly film having a thickness of 25 to 5 μm, and the adhesive is a thickness of 2 to 1 μm, and an initial adhesion of 10 to 30 N/ After 25 mm, UV light (ultraviolet light), the adhesion force is 5~〇15 104748. Doc 1362908 N/25 mm. According to the invention of claim 1, the interlayer insulating film has a portion on the upper surface of the interlayer insulating film which is curved so as to be in contact with the metal bump, and a lower shape away from the metal bump. The retention of the metal bumps can be improved. Since the interlayer insulating film has elasticity, the portion where the film is in contact with the bump is bent along the side surface of the bump, and has the effect of pressing the bump with the elastic force of the film, thereby preventing the metal bump from falling off. Therefore. Therefore, the problem that the metal bumps are separated by the members for connecting the wiring films can be eliminated. « According to the request 2, the connection between the wiring and the flag, the pure copper of the metal bumps. 9% is because the copper containing the impurity element including the oxygen element is not used as the copper material for forming the metal bump, and the copper having high purity is used, so that the problem of insufficient connection reliability can be improved. Then, since the total amount of protrusions of the ends (upper end and lower end) of the metal bumps protruding from the interlayer insulating film is 15 μm or more, it is possible to form a wiring film of copper or the like which is subsequently laminated on both surfaces of the member for connecting the wiring films. The metal layer is sufficiently crimped to each of the metal bumps to make the connection more reliable. Since the sum of the protruding amounts of the upper end and the lower end of the metal bump protruding from the interlayer insulating film is small, since the protruding amount of the metal bump is small, it is not possible to perform sufficient crimping by the pressurization for the above laminated layer, and there is no connection. In addition, although there is a recess on the surface, it is detrimental to the flatness. However, according to various experiments, there is no such concern when it is 15 μπι or more, and a connection having a dependency can be obtained. I04748. Doc iJ629〇8 In addition, since the sum of the above-mentioned protrusion amounts is 45 μm or less, when the interlayer insulating film and the subsequent metal layer for forming a wiring film are laminated, the surface flatness of the member for connection between the wiring films is not impaired. Hey. When the total of the amount of the protrusions is large, when the metal layer having the metal bumps is laminated in the subsequent step, the metal layer for forming the wiring film is not completely squashed in the bump portion. In the case of a bump, the flatness of the wiring board is deteriorated, and it is a problem that it cannot be ignored in a wiring board such as a bare IC or an LSI that requires particularly flatness. However, according to various experiments, when it is 45 μm or less, this is not the case. The concern is that the bumps can be completely squashed without damaging the flatness. Then, because the average surface roughness of the upper and lower surfaces of the above metal bumps is 0. Since the surface roughness is 5 μm or less, there is no possibility that fine voids are formed between the metal layer and the metal layer in the subsequent formation of the wiring film, and high reliability connectivity can be established. Also, the average surface roughness is 0. The surface roughness of 5 μηι or less can be easily achieved by forming a metal layer such as copper for metal bump formation by calendering. The member for wiring film connection according to claim 3' because the interlayer insulating film has three layers of a thermoplastic polyimide film or an epoxy modified resin film formed on both sides of the non-thermoplastic film constituting the core portion. Since it is constructed, the holding force of the bump can be ensured by the non-thermoplastic polyimide film which constitutes the core portion. Then, since the thermoplastic polyimide film or the epoxy-modified resin film is provided on both surfaces, it is possible to secure the adhesion necessary for the subsequent formation of the wiring layer for forming the wiring film on both sides. 104748. Doc, since the thickness of the thermoplastic polyimide film or the epoxy-modified resin film is 1 μm or more, it is possible to absorb the surface unevenness of the metal layer for wiring film formation which is laminated on both surfaces, for example, copper. After the buildup, there is a gap between the metal layer for forming a wiring film and the metal bump. In other words, the thinner the thickness of the thermoplastic polyimide film, the thin film is not completely absorbed by the unevenness of the surface of the wiring film forming metal layer to be laminated on the wiring film connecting member, and the wiring film forming metal layer and the interlayer are formed. Insufficient adhesion between the insulating films is not possible. However, according to the experiment, when the thickness of the thermoplastic polyimide film is 1 μm or more, it is sufficiently dense between the metal layer for forming a wiring film and the interlayer insulating film. With. In addition, since the thickness of the thermoplastic polyimide film is 8 μm or less, the strength and hardness necessary for the lower layer of the wiring layer forming metal layer to be subsequently laminated can be sufficiently ensured. The thicker the thermoplastic polyimide film, the adhesion to the metal layer for forming a wiring film can be ensured, but the strength and hardness necessary for the substrate as the wiring board are lowered. According to the experiment, the thermoplasticity is improved. When the thickness of the polyaniline tree or the epoxy-modified resin film is 8 pm or less, it has been confirmed that the strength and hardness necessary for the substrate of the wiring board to be subsequently laminated can be ensured. The member for wiring film connection according to claim 4 is a non-thermoplastic film composed of a non-thermoplastic polyimide film which is composed of a core material constituting the interlayer insulating film, and has a film thickness of 1 μm or more. Ensure the necessary. The strength non-thermoplastic polyalkyne resin film is a resin with good mechanical properties and good mechanical strength, so the thickness of 1 〇 μηι or more can be fully ensured as I04748. Doc 13 1362908 is the strength necessary for connecting members between wiring films. In addition, since the thickness of the non-thermoplastic polyimide film which constitutes the core material is 70 μm or less, it is not necessary to add the thickness of the multilayer wiring board using the member for connecting the wiring film or the member for connecting the wiring film. Can be completed. According to the member for connecting the wiring films of the claim 5, since the non-thermal plastic film constituting the core material of the interlayer insulating film is made of glass epoxy resin and has a film thickness of 30 μm or more, the necessary strength can be sufficiently ensured. Since the glass epoxy resin is a resin which is excellent in heat resistance and has good mechanical strength, the strength required for the member for connection between wiring films can be sufficiently ensured at a thickness of 3 μm or more. In addition, the thickness of the glass epoxy resin film constituting the core material is less than or equal to 'μίη, so that it is not necessary to increase the thickness of the multilayer wiring board using the member for connecting the wiring films or the member for connecting the wiring films. . According to the manufacturing method of the member for wiring film connection according to claim 6, the metal layer for forming a bump is formed by using the imaged photoresist film as a mask by the metal layer for forming a bump layer. Etching, forming a metal bump, removing the photoresist film, superposing an interlayer insulating film on the carrier layer, passing the interlayer insulating film through the metal bump, and then removing the carrier layer, thereby obtaining In the connection between the wiring films, the metal layer of the bump formation has a purity of 99% or more. Therefore, when a wiring board having a plurality of layers is formed by using a member for connecting the wiring films, it is possible to achieve a connection with few defects. Reliable electrical connection. ‘J rear bump forming metal layer has an average surface roughness of both surfaces of less than 5 μηη, so that the upper and lower sides of each metal bump can be made into 104748. Doc 1362908 is the average surface roughness 0. Surface roughness below 5 μπι. Therefore, in the joint surface of the metal layer formed by the subsequent formation of the wiring film, the number of defects can be reduced and higher reliability can be achieved. Connection "and further increase the reliability of the connection" 制造 The manufacturing method of the member for wiring film connection according to claim 7 is because the carrier layer which is lowered by the adhesion of UV light is used, and then before or after removal of the carrier layer The carrier layer is irradiated with UV light, so that the stripping force necessary to remove the carrier layer by φ can be further attenuated. Therefore, it is possible to remove the carrier layer without applying a large force to the member for connecting the wiring films, and there is no possibility that the member for connection between the wiring films is bent and deformed by the removal of the carrier layer. According to the manufacturing method of the member for interconnecting wiring films of claim 8, the interlayer insulating film is formed of a thermoplastic polyimide film or an epoxy modified resin film on both sides of the non-thermoplastic film constituting the core portion. The three-layer structure, as described above, ensures the retention of the bumps by the non-thermoplastic polyamidene tree • lipid film constituting the core portion. Then 'because of the thermoplastic polyimide film on both sides Or the epoxy-modified resin film 'ensures the adhesive force necessary for the subsequent formation of the metal layer for the formation of the wiring film on both sides. _ Then, since the thickness of the thermoplastic polyimide film or the epoxy modified resin film is 1 μm or more, it is possible to absorb the surface unevenness of the gold layer for forming a wiring film which is laminated on both surfaces, for example, copper. There is a gap between the metal layer for forming a wiring film and the metal bump after lamination. Further, the thickness of the thermoplastic polyimide film is less than 8 μπι, 104748. Doc 1362908 can sufficiently ensure the strength and hardness necessary for the lower layer of the wiring layer for forming a wiring film to be subsequently laminated. According to the manufacturing method of the member for connecting the wiring films of claim 9, the non-thermoplastic resin film constituting the core material of the interlayer insulating film is a non-thermoplastic polyimide film, and the thickness of the film is i 〇 μηη or more. Therefore, the necessary strength can be sufficiently ensured. In addition, since the film has a thickness of 65 or less, it is possible to achieve the effect of not increasing the thickness of the interconnecting member for wiring film or the thickness of the multilayer wiring board using the wiring Φ inter-membrane connecting member. . According to the method of manufacturing the member for wiring film connection according to claim 10, since the interlayer insulating film is made of a glass epoxy resin film and the thickness of the film is 30, the necessary strength can be sufficiently ensured. In addition, since the thickness of the film is not less than 100 μm, it is possible to achieve the effect of increasing the thickness of the multilayer wiring board by using the member for connecting the wiring films or the member for connecting the wiring films. According to the method of manufacturing the wiring inter-turn connecting member of claim 11, the thickness of the resin film of the carrying layer is 25 to 5 〇 4 〇, and then the thickness is 2 to 10 μm, and the initial adhesive force is 1 〇~3〇Ν/25 夫 (UV m after adhesion G. G5~G. 15 Ν/25 _, therefore, there is a sufficient adhesive force that does not peel off the connecting member between the wiring films when the carrier layer is necessary, and the adhesive force can be sufficiently weakened when the carrier layer is removed and peeled off. It must be peeled off with a large force. [Embodiment] The first best mode for the connection between the wiring films of the present invention is to embed a plurality of interlaminar insulating films in the interlaminar insulating film. The cross-sectional area ratio of the upper surface is 104748. Doc •16· The following is a columnar shape having a small cross-sectional area, and at least one end of the metal bump protruding from the interlayer insulating film', and the upper surface of the interlayer insulating film is bent to be in contact with the metal bump. High, the farther away from the metal bump, the lower the shape. The member for connecting the wiring films is formed by forming a metal layer for bump formation made of steel which is followed by a carrier layer, and photo-etching the metal layer for forming a bump to form a metal bump on the carrier. The metal bump forming surface of the layer is formed by laminating the interlayer insulating film through the respective metal bumps, and then obtained by removing the carrier layer. The metal is convex or the copper constituting the metal layer for forming the bump, and the purity thereof is preferably 99. 9% or more of the 'in' interlayer insulating film is preferably a three-layer structure, that is, a non-thermoplastic polyimine resin film as a core material to maintain the strength as a member for connecting the wiring films, and to constitute the core A thermoplastic polyimide film is formed on both surfaces of the non-thermoplastic polyimide film of the material to obtain an adhesion force to the metal layer for wiring film formation which is laminated on both surfaces of the member for connection between the wiring films. The thickness of the thermoplastic polyimide film on both sides is preferably 1 to 8 μm. Here, the same effect can be obtained by using an epoxy-modified adhesive instead of the thermoplastic polyimide film. Further, the non-thermoplastic polyimine resin film constituting the core material is preferably a non-thermoplastic polyimide film or a glass epoxy film. When the non-thermoplastic polyimine resin film constituting the core material is a non-thermoplastic polyimide film, the film thickness is preferably 10 to 65 μm. Further, when a glass epoxy resin film is used, the film thickness is preferably 30 to 100 μm. 104748. Doc -17- 1362908 Further, in the manufacturing process of the member for connecting the wiring films, it is preferable that the carrier layer for mounting the metal layer for bump formation is used because the adhesive force is lowered by uv light. Specifically, the adhesive is preferably used in a thickness of 2 to 1 〇 μπι, an initial adhesive force of 10 to 30 N/25 mm, and an adhesion force after irradiation with UV light (ultraviolet light). 05~0. 15 N/25 mm is preferred. [Embodiment 1] Hereinafter, the present invention will be described in detail based on the illustrated embodiments. Figs. 1(A) to 1(F) are cross-sectional views showing the first embodiment and a method of forming a multilayer wiring board in the order of steps. (A) First, a main surface of one side of the metal layer 2 for forming a bump formed of copper is passed through the carrier layer 4, and a photoresist film is formed on the main surface of the other side of the metal layer 2 for bump formation. 6. The smectret film 6 is imaged by applying exposure and development treatment to the photoresist film 6. Fig. 1(A) shows the state of the photoresist film 6 after being imaged. As the bump forming metal layer 2, high-purity deoxidized copper having a copper purity of 99 9% or more can be used. In this case, when a high-purity member is used, the metal bump and the wiring film can be formed when the wiring layer forming metal layer is formed of copper in the two-layer layer of the interconnecting member. Forming a copper with less defects in the metal layer. The copper joints are connected to each other to obtain extremely reliable connection. Then, the surface roughness of the metal layer 2 for bump formation is made to have an average surface roughness of 0. 5 μιη or less. When the thickness of the surface of the upper and lower surfaces of the metal bump is increased, the metal layer for forming a wiring film made of copper in the two-layer layer of the connecting member between the wiring films is completed after the wiring member for connection between the wiring films is completed. . Doc • 18- 1362908 The joint surface between the bump and the metal layer for forming the wiring layer cannot fill the unevenness, and the fine defects remain, and it is difficult to sufficiently ensure the reliability of the connection: but the average surface roughness is 〇 . When the thickness is 5 μηι or less, almost no defects are formed on the joint surface of copper or copper, and the highly reliable connection property can be obtained. Further, the carrier layer 4 is formed on the main surface of one side of the resin film 4a having a thickness of, for example, 25 to 5 Å μm as a base material, and the adhesive layer is used by the visor. . Specifically, it is advisable to use the initial stage • Adhesion 1〇~3〇 N/25 mm, adhesion after UV exposure 0,05~〇. 15 • N/25 mm is preferred. The reason why the adhesion is lowered by the UV exposure is that the carrier layer 4 has sufficient adhesive force in the bump etching step or the like as necessary to have the bumps not fall off, and the carrier layer 4 is not required, and the UV can be removed when peeling off. The light sufficiently weakens the adhesion, making it easy to peel off. In addition, when the thickness of the resin sheet 4a is 25 to 50 μm, it is difficult to ensure the strength of the member for connection between the wiring films when it is 25 μm or less, and it is likely to be deformed during the process of the seeding process and the conveyance process. When it is 50 μm or more, when the carrier layer 4 is peeled off, unnecessary deformation is applied to the member for connecting the wiring films, and the bumps are detached and the member for connection between the wiring films remains. The width of the resin film 4a and the adhesive layer 4b as the substrate is, for example, 25 μm thick, and the thickness of the adhesive layer is 2 to 1 μm. The reason for this is that a sufficient adhesion cannot be obtained when the thickness is 2 μπ or less, and when the metal layer 2 for bump formation is selectively etched to form a metal bump, the pressure of the adhesive layer is etched by etching. Or the mechanical stress during the transfer causes the metal bumps to fall off i04748. Doc 19 1362908 and other defects, in addition, 8 μηι or more, the adhesive layer 4b is too thick and soft, not suitable as a lower layer of metal bumps, easy to produce the inclination or position of the metal bumps. Move and so on. (B) Next, as shown in Fig. (B), by using the above-mentioned photoresist film ό as a mask, the bump forming metal layer 2 made of the above copper is formed to form the metal bumps 8. The metal bump 8 has a tapered volcano shape, and the smaller the cross-sectional area is on the upper side (the top surface side of the metal bump 8). 'φ (C) Next, as shown in FIG. 3C, the UV-light is irradiated by the member for connecting the wiring film formed on the side of the metal bump 8, and the adhesion layer 4b of the carrier layer 4 is adhered. The power is reduced. The surface formed by the side of the metal bump 8 illuminates the UV light system because the metal bump 8 becomes a mask when exposed, the adhesive layer under the metal bump 8 is not exposed, the adhesive force can be maintained, and the bump is not provided. The part contributes to the fixing of the metal bumps 8 because of the hardening of the adhesive. (B) Next, as shown in FIG. 1(D), the interlayer insulating film 1 and the release sheet 11 made of a synthetic resin or the like are faced to the metal bump 8 side of the member for connecting the wiring films. This interlayer insulating film has a three-layer structure as shown in FIG. Specifically, 'the non-thermoplastic polyimine resin film l〇a is used as the core material' to form the thermoplastic polyimide film 1b, i〇b on both main faces thereof' The film thickness of the non-thermoplastic polyimine resin film 10a is 10 to 50 μm, and the film thickness of the thermoplastic polyimide film 丨〇b and 1 〇b of the two main faces is 1 to 8 μm. The reason why the thickness of the non-thermoplastic polyalkyne resin film constituting the core material of the 7-layer insulating film is 10 to 50 μm is sufficient, and the thickness of 1 〇 μηη or more can be sufficiently 104748. Doc -20· 1362908 The strength required for the connection between the wiring films is ensured, and since the thickness is 50 μm, the member for connecting the wiring films can be thickened without uselessly or the connection between the wiring films can be used. The reason why the thickness of the multilayer wiring board of the member is completed is as follows. The reason why the thickness of the thermoplastic polyimide film 201b, 10b on both main surfaces is 1 to 8 μm is as follows. In other words, when the thermoplastic polyimide film is thin, it is not possible to obtain a sufficient adhesion between the wiring film-forming metal layer to be laminated on both surfaces after the completion of the connection between the wiring films. However, according to the experiment, when the thickness is i μm or more, it is possible to obtain a necessary adhesion force with the metal layer for forming a wiring layer formed of, for example, copper laminated on both surfaces. Further, when the thermoplastic polyimide film 10b is too thick, the non-thermoplastic polyimide resin to be a core material has a tough property and excellent electrical properties. Therefore, the thermoplastic polyimide resin is used. As long as it is the minimum amount necessary. (E) Next, as shown in Fig. 1(E), the interlayer insulating film 1〇 and the peeling sheet are pressed from the upper surface via a buffer material (not shown) so that the interlayer insulating film 1〇 and the peeling sheet 11 are in accordance with each other. The carrier film and the metal bumps 8 are closely packed in shape. At this time, it can be more effectively adhered by heating and pressurizing. (F) The picker 'shown as shown in Fig. 1(F)' starts from the upper surface of the peeling sheet u, preferentially grinds the protruding portion, and grinds $^^ & Thereby, the top surface of the metal bump 8 is exposed. Further, it is also possible to use a roller grinder or the like which can be continuously ground instead of the whetstone. Therefore, the interlayer insulating film ΐθ is naturally as shown in Fig. 1(F), and becomes a curved upper surface 104748. Doc •21– 1362908 The portion of the curved portion that is in contact with the metal bump 8 is higher, and the lower the shape is from the metal bump 8 . • Then, by becoming this shape, the metal bump holding force can be improved. Since the interlayer film has elasticity, the portion of the film that is in contact with the bump is bent along the side surface of the I ¥ bump, and has the effect of pressing the bump with the elastic force of the film, thereby preventing the metal bump. Fall off. Further, in this state, the metal bumps 8 made of steel must protrude from the wide-space insulating φ film 10 by 15 to 45 μm. . The reason is as follows. In other words, the amount of protrusion of the metal bumps 8 by the interlayer insulating film 1 is too small, and the amount of shrinkage of the metal bumps 8 by the pressurization when the wiring layer for forming a wiring film is formed between the members for connecting the wiring films cannot be reduced. The amount of protrusion of the metal bumps 8 is sufficiently offset, and there is an incomplete connection. Further, a concave portion is formed on the surface to impair the flatness. However, according to various experiments, there is no such concern when 15 μηι or more, and a reliable connection can be obtained. This is the reason why the amount of protrusion is 15 μmη or more. When the amount of protrusion is too large, the portion having the metal bumps is formed in the subsequent step, and when the metal layer for forming a wiring film is laminated, the metal layer for forming a wiring film is not formed, and the bump portion is completely squashed. In the bulging shape, the flatness of the wiring board is deteriorated. In the case of a bare IC or a wiring board such as an LSI, which is particularly required to have flatness, it is a problem that cannot be ignored. However, according to various experiments, there is no such concern when it is 45 μm or less. The bump 8 can be completely squashed without damaging the flatness. This is the reason why the amount of protrusion is 4 5 μηι or less. 104748. Doc •22· !3629〇8 Further, the amount of protrusion of the metal bump 8 from the interlayer insulating film 1 is 丨5 to 45 μm, and the thickness of the metal layer 2 for bump formation can be made larger than that of the interlayer insulating film. A thickness of 1 5 to 45 μιη is achieved. (G) Next, the υν light is again irradiated from the side of the carrier sheet to harden the adhesive layer of the bump portion to lower the adhesive force, and then the carrier layer 4 and the release sheet 丨j are peeled off. Thereby, as shown in FIG. 1(G), the member for connecting between wiring films is completed. Further, since the adhesive layer 4b of the carrier layer 4 is lowered by the irradiation of the UV light by the adhesion, the peeling of the carrier layer 4 can be performed with a weak peeling force. Therefore, the problem that the member for connection between the wiring films is deformed by the application of strength when the carrier layer 4 is peeled off can be prevented in advance. Further, the release sheet can be easily peeled off by using a film which does not adhere to any resin such as polyethylene or polypropylene. Further, the peeling operation can be carried out together with the UV light irradiation. In other words, the peeling operation can be performed while irradiating the UV light, and the working time can be shortened and the manufacturing cost can be reduced. (Modification) Further, a glass epoxy resin film may be used as the interlayer insulating film 10 in the above embodiment. At this time, the thickness of the glass epoxy resin film must be 30 to 100 μm. 3(Α) and (Β) show a cross section of a method of manufacturing a two-layer wiring substrate using the member for wiring film connection shown in Fig. 1(F) in order of steps. Figure. As shown in Fig. 3 (A), the metal layers 12 and 12 for forming the wiring film are superposed on both surfaces of the member for connecting the wiring films, and are laminated by pressure and heat. (Β) Next, by using the above-mentioned wiring film forming metal layers 12, 12, the light is left 104748. Doc • 23- 1362908 and imaged. Thereby, as shown in FIG. 3(B), the wiring film 14 made of steel is formed. [Example 2]; FIG. 4(A)(G) shows the wiring substrate of the second embodiment of the present invention in order. A cross-sectional view of the steps of the manufacturing method. (A) First, as shown in Fig. 4 (a), the upper mold 80 is laminated on the interlayer insulating film 1 . The upper mold 8 is made of a metal (for example, sus or the like) or a resin structure so as to have bumps corresponding to metal bumps (8, 8, ...) to be described later. • Holes 82, 82, . . . Further, the bump corresponding holes 82, 82, ... can be coated with a photoresist, for example, by an upper mold 80 attached to the interlayer insulating film 1 , by exposing and developing the photoresist. After the film is formed as a mask film, the upper mold 8 is etched by using a mask film made of the photoresist as a mask. Moreover, the bumps of the upper mold 80 correspond to the holes 82, 82, . ·. The formation may be performed at a stage where the upper mold 80 is not attached to the interlayer insulating film 10 (B) and then 'as shown in FIG. 4(B)' is prepared as a lower mold 84 made of metal (for example, etc.) or a resin. The wiring film connecting member 17b on which the metal bumps 8 are formed is formed, and the upper mold 8 is placed with the interlayer insulating film 1 facing downward, and the metal bumps corresponding to the respective bump corresponding holes 82, 82, ... are formed. The block 8 is positioned in a relatively straight position and faces the upper surface of the face 8 of the member 17b. (c) Next, as shown in Fig. 4(c), the upper mold 8 is pressed toward the lower mold 84 side to be in a state in which the interlayer insulating film 10 is penetrated by the metal bumps 8. Further, because the resin may cause chips or slag to pass through, the surface of the interlayer insulating film 1 may be contaminated. Therefore, it is preferable to carry out the cleaning after the completion of the pressurizing step. Doc •24- 1362908 Clean. (D) Next, as shown in Fig. 4(D), the upper mold 100 is removed. • (E) Next, as shown in Fig. 4(E), the lower mold 84 is removed. Thereby, the member for connecting the wiring films is completed. This wiring film connecting member is produced by using the mold 84 without using the carrier layer 4. Therefore, the member for connecting the wiring films can be manufactured without using the carrier layer 4. Further, in the double-faced wiring film of the member for wiring film connection shown in Fig. 1(F), it is necessary to form a metal layer for wiring formation, and the same is shown. The steps shown in 4(F) and (G) are performed. (F) Next, as shown in Fig. 4(F), the wiring layer forming metal layers 23 and 23 made of copper face both surfaces of the interlayer insulating film 1A through which the metal bumps 8 pass. (G) Then, the wiring film forming metal layers 23 and 23 are heated and pressurized to the interlayer insulating film 1〇 laminated layer. Thereby, the wiring board 丨ld is completed. (A) and (B) show a method of manufacturing a multilayer wiring board using the member for wiring film connection according to the present invention in order of steps. This embodiment is formed by pressurizing the multilayer wiring substrate 41 in one layer by full pressurization. (A) First, each of the wiring film-to-film connecting members 46 to 48 of March is placed between, for example, four of the two-sided wiring boards 42 to 45 (Fig. 5(A)). (B) Next, it is pressurized together at a high temperature. Thereby, the multilayer wiring substrate 41 is completed (Fig. 5(B)). At this time, each of the four double-sided wiring boards 42 to 45 can be implemented by the king of the i-th embodiment. In the 卩 step, the wiring film forming copper foil 2 3 is formed by image formation, and the three wiring film connecting members 46 to 48 can be implemented by the first method. Doc -25 - 1362908 A part of the steps of the embodiment (Figs. 1 (A) to (F)) to form β. [Example 3] Fig. 6 shows a member for connection between wiring films of a third embodiment of the present invention. Sectional view. In the member for connection between wiring films of the above-described embodiment shown in Fig. 1 (F), the shape of the metal bumps (8) is tapered and volcano-shaped, but does not necessarily have to be tapered, as shown in Fig. 6, for example. The metal bump 62 has a cylindrical shape, and the cross-sectional area may be the same from the top to the bottom. Further, in the member for interconnecting wiring films of the above-described embodiment shown in Fig. 1(G), the bottom surface of the metal bump (8) and the bottom surface of the interlayer insulating film (1) are flush with each other (on the same plane). However, the upper end portion of the metal bump 62 protrudes from the upper surface of the interlayer insulating film 6 ,, and the lower end portion may protrude from the lower surface of the interlayer insulating film 6 。 as in the embodiment shown in FIG. 6 . At this time, the protruding amount of the metal bump 62 from the upper surface of the interlayer insulating film 60 is Α, and the protruding amount of the metal bump 62 from the lower surface of the interlayer insulating film 6 为 is B, and the sum of the protruding amounts A and B must be! 5~45 μιΏ. Further, the above points are the same as those of the wiring film connecting member of the embodiment shown in Fig. 1(G). The shape of the bumps may be, for example, a shape such as a truncated cone shape, a quadrangular pyramid, or an abacus bead shape. The above embodiments of the present invention are directed to a plurality of wiring film connecting members and a method of manufacturing the same. However, the present invention is also applicable to members for electrically conductive connection between microelectronic members. It can be easily applied to, for example, a wafer carrier, a wafer test stand, a test substrate, an interposer or a circuit board (4) J04748. A wafer carrier, a circuit board, or other wafer carrier having a plurality of bumps protruding from at least one side of the interconnecting substrate, or a member used on the interconnected substrate, of doc -26·1362908 to panel) In the carrier, the substrate or the electronic board, the upper or lower surface of the metal bump on one or both sides of the wafer carrier or substrate is connected, for example, through pressure contact, or permanent connection, metal soldering, and other microelectronic components. The points may be temporarily connected to each other. [Industrial Applicability] The present invention relates to a member for connecting between wiring films and a method for manufacturing the same, and more particularly to a multilayer wiring substrate which is applicable to use of a metal bump made of copper. The members for connecting the wiring films and the method for manufacturing the same when the wiring films are connected have general availability. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 (Α) to (G) show a cross-sectional view showing a first embodiment of a method for producing a member for interconnecting wiring films of the present invention in order of steps, and (G) is a connection between wiring films of the present invention. A cross-sectional view of a first embodiment of the member. Fig. 2 is a cross-sectional view showing an interlayer insulating film used in the manufacture of a member for connecting wiring films. 3(A) and 3(B) are cross-sectional views showing an example of a method of manufacturing a wiring board using the member for wiring film connection shown in Fig. 1(F) in order of steps. 4(A) to 4(G) are cross-sectional views showing a second embodiment of a method for producing a member for connecting wiring films of the present invention in order of steps. (A) and (B) are cross-sectional views showing a method of manufacturing a multilayer wiring board using the member for interconnecting wiring films of the present invention in order of steps. Figure 6 is a view showing a member for connection between wiring films of a third embodiment of the present invention. Doc -27- • - ·. · ι — 4 - 昼 . -—. —· -· 1362908 Sectional view. [Description of main component symbols] 2 Metal layer for bump formation (copper) 4 Carrier layer* 4a Resin film 4b Adhesive layer 8 Metal bump (copper) #1〇Interlayer insulating film 10a Non-thermoplastic polyimide film 10b Thermoplastic Polyimine Resin Film 12 Metal Layer for Wiring Film Formation 14 Wiring Film 60 Interlayer Insulation Film 62 Metal Bump (Cylindrical) • 9 104748. Doc -28-