TWI358465B - Etching agent compositions for copper-containing m - Google Patents

Etching agent compositions for copper-containing m Download PDF

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TWI358465B
TWI358465B TW099119141A TW99119141A TWI358465B TW I358465 B TWI358465 B TW I358465B TW 099119141 A TW099119141 A TW 099119141A TW 99119141 A TW99119141 A TW 99119141A TW I358465 B TWI358465 B TW I358465B
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Taiwan
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group
copper
mass
acid
composition
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TW099119141A
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Chinese (zh)
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TW201124562A (en
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Yusuke Nakamura
Yuichiro Kishi
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Adeka Corp
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/18Acidic compositions for etching copper or alloys thereof

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)

Description

1358465 六、發明說明: 【發明所屬之技術領域】 .本發明係關於含銅材料用蝕刻劑組成物人 料之蝕刻方法,詳細而言,係關於一種可無形狀^’’5材 形成微細電路圖案(電路導線)之含鋼材料用餘列齊丨^地 物及含銅材料之蝕刻方法。 ^ 且成 【先前技術】 表面形成有電路導線之印刷電路板(或薄膜)被卢 # 地用於組裝電子部品或半導體元件等。然後,伴隨^近 年來電子機ϋ之小型化及高功能化的要求,針對=刷電 路板(或薄臈)的電路導線亦被期望要能夠高密度化及 型化。 ^ 形成高密度電路導線的方法已知有被稱為減成 (subtractive)法或半加成(semi_a(jditive)法之方、去,談等 方法中係進行了濕式蝕刻。 '^ 為了形成微細電路導線,理想為蝕刻低部分無殘癱 膜、從上方觀之電路導線的側面為直線(直線性)、電路 導線的斷面為矩形以及具有高蝕刻係數(滅㈣ factor) ’但實際上會發生因殘膜、直線性不佳、側蚀刻、 ,(ΙΪ,eUt)以及電路導線的上•寬度(以T亦有稱 為「頂部寬度」的情況)過細而造成蝕刻係數降低等之 形狀不良。因此,濕蝕刻中便被期望能夠抑制該等形狀 不良。 μ 4 針對上述電路道 _劑組成物的成t 狀不良已有各種藉由改善 •例如,專利文獻f由技術被提出。 用必要成分A气^二中揭不有一種方法,該方法係利 刻促進劑以及含鋼::三價鐵離子、鹽酸、含銅材料蝕 係揭示了 - 處,含娜龍刻抑制劑 燒及環氧乙烧之化〜合物的活性11基附加有環氧内 ^ ^ 0物,且亦揭示了一種使用磷酸來竹 為“鋼表面的清淨化效果或平坦性之成分。作 又’專利文獻2中揭示了一種由酸及水溶液 名抑制侧侧、電路導線的上部變細之鋼或鋼合八成 .灸刻劑組成物’其中該酸係選自銅的氧化劑、鹽^的 機酸鹽所組成之群,㈣水溶㈣含有選自聚·已有 醇及聚胺與聚烯烴乙二醇之共聚物所組成之群的取八 物。此處’銅的氧化劑係揭示了二價銅離子及二 5 J7 ~^丨貝鐵離 卞’用來產生二價銅離子之化合物係揭示了氣 ®)、溴化銅(II)及氬氧化銅(II)’用來產生三價鐡離子麵 化合物揭示了氣化鐵(III)、溴化鐵(III)、碘化鐵(111)之 硫醆鐵(III)、硝酸鐵(III)及醋酸鐵(III)。又,聚缔炉、 二醇係揭示了聚乙二醇、聚丙二醇、環氧乙烷•環& = 烷共聚物,聚胺與聚烯烴乙二醇之共聚物係揭示了乙— 胺、二伸乙三胺、三伸乙四胺、四伸乙五胺、五伸乙二 胺、N-乙基乙二胺等之乙二胺’與聚乙二醇、聚丙二醇、 環氡乙烷·環氧丙烷共聚物之共聚物。 、 再者,專利文獻3中揭示了一種由氧化性金屬離子 源、選自無機酸或有機酸之酸、含有唑(az〇le)之水溶液 所構成並此抑制底切之钮刻劑組成物,其中該唑係只具 有作為環⑽異原子之氮原卜此處,氧化性金 屬離子 源係揭示了二價銅離子或三價鐵離子,酸係揭示了磷 酸。又,為了進行表面形狀均勻的㈣,亦揭示了使用 如聚氧乙稀與聚氧两烯的塊狀聚合物等之非離子性界 面活性劑。 專利文獻1 :日本特開2〇〇3_1;38389號公報. 專利文獻2 :日本特開2〇〇4_2569〇1號公報 專利文獻3:日本特開2〇〇5_33〇572號公報 然而’專敝獻1及2所揭示之㈣劑組成物無法 進行對微細電路圖案均勻的钮刻,其結果便會有發生電 路形狀不良(直線性不良)或短路等之問題。又,由於專 利文獻3所揭示之似彳齡錢的分散性低1相對於 微細電路圖案的溶液排除性很差,故會有因電路形狀不 良(部分性底切)所引起的電路剝落或因磷酸與銅或鐵之 鹽所造成的於渣產生而引發短路等問題。 【發明内容】 本發明係為解決上述問題所發明者,其目的在於 供-種可無形狀不良地形成微細電路圖#之含鋼材 用敍刻劑組成物及含銅材料之姓刻方法。 本發明者等為了解決上述問題,經過多次詳細檢討 1358465 後的結果,發現#刻劑組成物的組成與微細電路 形成有密切賴係,而藉由具有特定組= 物並利用該蝕刻劑組成物來進行蝕刻,則可解決1、才 題,進而達成本發明。 、以4 亦即,本發明為-種含崎料祕_組成物,1 特徵在於係由包含有以下成分之水溶液所構成:八1358465 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to an etching method for an etchant composition for a copper-containing material, and more particularly to a fine circuit for forming a shapeless material The etching method of the steel material of the pattern (circuit wire) is the same as that of the copper material. ^成成 [Prior Art] A printed circuit board (or film) on which a circuit lead is formed is used to assemble an electronic component or a semiconductor component or the like. Then, with the demand for miniaturization and high functionality of electronic devices in recent years, it has been desired to increase the density and shape of circuit leads for brush boards (or thin plates). ^ Methods for forming high-density circuit wires are known as methods of subtractive or semi-additive (semi_a (jditive) method, wet etching, etc. The micro-circuit wire is ideal for etching a low-residue residue-free film, the side of the circuit wire viewed from above is straight (linear), the cross section of the circuit wire is rectangular, and has a high etching coefficient (de-(four) factor) 'but actually Shapes due to residual film, poor linearity, side etching, (ΙΪ, eUt), and the width of the circuit lead (in the case where T is also referred to as the "top width") are too thin to cause an increase in the etching coefficient. Therefore, it is desirable to suppress such shape defects in wet etching. μ 4 Various improvements have been made in the formation of the above-mentioned circuit path-agent composition. For example, Patent Document f has been proposed by the technique. There is no way to remove the necessary component A gas, which is a method of engraving accelerator and steel containing: trivalent iron ion, hydrochloric acid, copper-containing material, and revealing - Epoxy Ethylene The active 11 group of the compound is added with an epoxy resin, and a compound using phosphoric acid to "cleaning effect or flatness of the steel surface is also disclosed." A steel or steel which is made thinner by the acid and aqueous solution name side and the upper part of the circuit wire. The moxibustion engraving composition 'the acid is selected from the group consisting of copper oxidant and salt acid salt. (4) Water-soluble (4) Eight substances containing a group consisting of poly-alcohol and a copolymer of polyamine and polyolefin ethylene glycol. Here, the oxidizing agent of copper reveals divalent copper ions and two 5 J7 ~ ^Mulberry iron 卞 卞 'The compound used to generate divalent copper ions reveals that gas ®), copper (II) bromide and copper arsenide (II) are used to generate trivalent cerium ion surface compounds to reveal gasification. Iron (III), iron (III) bromide, iron sulphide (III) iron (III), iron (III) nitrate and iron (III) acetate. In addition, poly-binders and diols reveal poly Ethylene glycol, polypropylene glycol, ethylene oxide, cyclo & alkane copolymer, copolymer of polyamine and polyolefin glycol reveals that ethylene-amine and di-extension Ethylenediamine, such as triamine, triamethylenetetramine, tetraethyleneamine, pentaethylenediamine, N-ethylethylenediamine, and polyethylene glycol, polypropylene glycol, cyclohexane, epoxy A copolymer of a propane copolymer. Further, Patent Document 3 discloses an aqueous solution containing an oxidizing metal ion, an acid selected from a mineral acid or an organic acid, and an aqueous solution containing an azole, and the like. The button engraving composition is cut, wherein the azole system has only a nitrogen atom as a hetero atom of the ring (10). The source of the oxidizing metal ion reveals a divalent copper ion or a ferric ion, and the acid system reveals phosphoric acid. Further, in order to carry out the uniform (4) surface shape, a nonionic surfactant such as a bulk polymer such as polyoxyethylene and polyoxyethylene is also disclosed. Japanese Unexamined Patent Application Publication No. Hei No. Hei. No. Hei. No. Hei. No. Hei. The composition of the (four) agent disclosed in the first and second embodiments cannot perform a uniform patterning of the fine circuit pattern, and as a result, there is a problem that the circuit shape is defective (linearity is poor) or short circuit. Further, since the dispersibility of the age-like money disclosed in Patent Document 3 is low, the solution removal property with respect to the fine circuit pattern is poor, and there is a possibility that the circuit is peeled off due to a poor circuit shape (partial undercut). The problem caused by the generation of slag caused by the phosphoric acid and the salt of copper or iron causes a short circuit. SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for forming a smear-containing composition for a steel-containing material and a method for etching a copper-containing material without forming a shape. In order to solve the above problems, the inventors of the present invention have conducted a detailed review of the results of 1358465, and found that the composition of the composition of the scoring agent is closely related to the formation of the fine circuit, and is composed of a specific group of materials and using the etchant. When the object is etched, the problem can be solved, and the present invention is achieved. In the present invention, the present invention is a composition containing a substrate, and 1 is characterized in that it consists of an aqueous solution containing the following components:

(A) k自一彳貝銅離子及二價鐵離子之至少1種氧化 蜊成分0.1〜I5質量% ; (=)算術平均分子量為1 500〜3,_且環氧二烧基 的=為15〜50質量%之具有環氧乙絲及環氧丙像基 刀子聚醚二醇0 001〜3質量% ; (C)下式(1)所表示之多元醇0.001〜3質量% ; [化學式1] '(A) k from at least one cerium oxide component of a mussel copper ion and a divalent iron ion 0.1 to 1.5 mass%; (=) the arithmetic mean molecular weight is 1,500 to 3, and the epoxy dialkyl group = 15 to 50% by mass of epoxy ketone and epoxy acryl-based knife polyether diol 0 001 to 3 mass%; (C) 0.001 to 3 mass% of the polyol represented by the following formula (1); 1] '

(式中,Ri表示碳數2〜6之伸烷基,χ1〜χ3為下式(2) 官示之官能基,Χ4為氫原子或下式(2)中所表示之 吕月匕基,η表示之數字) [化學式2] ~^R2〇)?~{R3〇^pH (2) (式中’ R及r3表不伸乙基或伸丙基,I r2為伸 7 為伸丙基,當r2為伸丙基時r3為伸乙基,p 環氧乙的算術平均分子量為2GG〜1G,000且 質量% · 2自磷酸及磷酸鹽之至少1種磷酸成分ο.1〜5 〇. 05二f:%氣化氫及硫酸之至少1種無機酸成分 於.从Γ-本發明為""種含鋼材料之侧方法,其特徵在 V、·於厚产1 1 0 功之含鋼二;的二::刻間隙(―㈣―)1〜1〇“ )圖案化中’係使用上述蝕刻劑組成物。 微心路明’則可提供一種能夠無形狀不良地形成 之蝕刻方去、之含鋼材料用蝕刻劑組成物及含銅材料 【實施方式】 · 劑% ί Ϊ、日月之含鋼材料用㈣劑組成物(以下稱為钱刻 自;由包含有以下成分之水溶液所構成:⑷選 下it離Λ及三價鐵離子之至少1種氧化劑成分(以 ⑻以、》)’(Β)特定的高分子聚越二醇(以下稱為 成刀),(C)特定的多元醇(以下稱為(c)成 :^::^^观分);物—機酸 的功if/為—㈣钱將含崎料氧化來進行侧 此之成分’可使用二價銅離子、三價鐵離子,或二 135*8465(wherein, Ri represents an alkylene group having 2 to 6 carbon atoms, χ1 to χ3 is a functional group represented by the following formula (2), and Χ4 is a hydrogen atom or a ruthenium group represented by the following formula (2), and η represents The number) [Chemical Formula 2] ~^R2〇)?~{R3〇^pH (2) (wherein R and r3 do not extend ethyl or propyl, Ir 2 is stretch 7 for propyl, when When r2 is a propyl group, r3 is an exoethyl group, and the arithmetic mean molecular weight of p-epoxy B is 2GG~1G,000 and mass% · 2 at least one phosphoric acid component from phosphoric acid and phosphate ο.1~5 〇. 05 Two f:% at least one inorganic acid component of hydrogenated hydrogen and sulfuric acid. From the side of the invention, the method of the "steel-containing material" is characterized by V, · a productive yield of 110 Steel 2; 2:: Engraving gap (―(4)-)1~1〇") In the patterning, the above etchant composition is used. Micro-Xingming can provide an etching method capable of forming without shape. An etchant composition and a copper-containing material for a steel-containing material [Embodiment] · Agent % Ϊ Ϊ, a composition of a material for a steel material of the sun and the moon (hereinafter referred to as "money engraving"; The composition of the aqueous solution: (4) It is based on at least one oxidizing agent component of cerium and trivalent iron ions ((8), "), (Β) specific polymer polyglycol (hereinafter referred to as "knife"), (C) specific polyol (below It is called (c) into: ^::^^分分); the function of the machine-acid acid is / (4) the money will be oxidized by the sulphate to carry out the component of the side - the use of divalent copper ions, ferric iron Ion, or two 135*8465

價銅離子與三價鐵離子的混合物。該等通常可將銅或銅 (II)化合物及/或鐵(III)化合物作為供給源來使用。銅(11) 化合物舉例有氣化二價銅、溴化二價銅、硫酸二價銅、 氫,化二價銅及醋酸二價銅,鐵(111)化合物舉例有氯化 三價鐵、溴化三價鐵、碘化三價鐵、硫酸三價鐵、硝酸 三價鐵及醋酸三價鐵等。該等可單獨使用,亦或混合2 種,以上來使用1等當中,從費用m组成物的 穩定性、⑽速度的控制性之觀點來看,較佳為銅、氣 化二價銅、硫酸二_及氣化三價鐵,更佳為氣化 鐵。 、一只 •侧_絲巾之(A)成分的含^二價鋪子及/ ,三價鐵離子來換算為aw f量%,較㈣_質 置%。當(A)成分的含量較(u f量%要少時,祕 間會變長、絲會劣化或生産性會降低ϋ咸成法 中’由於_面之Nl_Cr種晶相㈣效果a mixture of valence copper ions and ferric ions. These can usually be used as a supply source of copper or a copper (II) compound and/or an iron (III) compound. Examples of the copper (11) compound include vaporized divalent copper, copper dibromide, copper disulfate, hydrogen, divalent copper and divalent copper acetate, and iron (111) compounds are exemplified by ferric chloride and bromine. Ferric trioxide, trivalent iron iodide, ferric iron sulfate, ferric trivalent iron, and ferric acetate. These may be used singly or in combination of two or more. In the above, the use of one or the like is preferably copper, vaporized divalent copper, sulfuric acid from the viewpoint of stability of the composition of the cost m and (10) controllability of the speed. Second, and gasification of ferric iron, more preferably gasified iron. One side of the side (S) of the component (A) contains a bivalent shop and /, and the ferric ion is converted into aw f%, which is (%)_%. When the content of the component (A) is less than (the amount of u f is small, the secret is long, the filament is deteriorated, or the productivity is lowered.) The effect of the Nl_Cr seed phase (4) due to the _ surface

f的殘膜錄性會魏H面,當⑷成分的含量 =^量%要多時,則無法控制_速度^刻係數 入’右同時㈣三價鐵離子與二價鋼 可控制蝕刻劑組成物的氧化還原電 于的话,則 銅濃度等,並可自動地控制蝕刻劑% 馱/辰度、 此情況下二價娜子的含量以_子來換^刻能力。 質量%,較佳為1〜10質量%。备二 '為〇.5〜10 0.5質量%要少時,則會有無法;= 9 夕Ί另方面’當二價銅離子的含量較10質量 夕日寸’則會有糊劑組成物巾產技渣之情況。、° 的渗(透提高仙做絲對電路圖案 ,及環氧丙烧基之高分子聚w二醇。該高 ^並未特別限定’舉例有例如乙二醇、丙二醇及丁:: *之烯烴乙一醇的環氧乙烷及環氧烷附加物取二 醇、聚丙二醇及聚丁二醇等之聚職乙二醇^二 及環氧烧附加物。可單獨使用i種高分 乙坑 或現合2種以上來使用。 抑 尚分子聚醚二醇的算數平均分子旦 1,500〜3,咖。當算數平均分子量較1,要小時,里= 形狀的直線性會降低,而無法獲得期望的電路圖案。 一方面,當算數平均分子量較3,000要大時,則蝕^另 度會變慢或蝕刻效率會降低。 7速 又,高分子聚醚二醇中之環氧乙烷基的含旦 15〜50質量%。當環氧乙烷基的含量較15質量%^二 時,則蝕刻劑組成物的相溶性會降低,且會發生"疒·^ 等。另一方面,當環氧乙烷基的含量較5〇質量% 時,則無法提高蝕刻係數,而無法獲得期望的電路圖夕 環氧乙燒基及環氧丙烧基可分佈成塊狀或 狀。從降低钕刻劑組成物的起泡性之觀點來看’ ^件 分佈成塊狀。 & "^為 高分子聚醚二醇當中,下記式(3)所表示之化合物可 (3) 獲知更良好的電路形狀,故特佳 [化學式3] 上式(3)中’ R及R,表示伸乙基或伸丙基,當R為 伸乙基日^ R為伸丙基,當R為伸丙基時R,為伸乙基,f b及C表示使算術平均分子量為1,5〇〇〜3 〇〇〇且環 炫基含量為15〜50質量%之數字。 蝕刻劑組成物中之(B)成分的含量為〇 〇〇1〜3質旦 %’較佳為0.05〜2質量%。當(B)成分的含量較_ = 量%要少時,則無法獲得充分的使収果?另 ' =分的含錄3質量%要多時,則蝕刻劑組成物的 黏度會變高且溶液排冷性合降 W战物的 .線性變差。職③日卜低而使得電路形狀的直 物的滞留來賦予良好電路形狀的效果。圍线刻劑組成 (C)成分相對於含銅材料不具有錯妒 刀又,由於 親和性,故亦可作為適#_刻抑^ ^位等過度的 由添加該(C)成分,較能形成作用。藉 抑制側蝕刻、抑制底切、減少並抑;,向直線性、 度等效果之㈣顏成物。㈣電料線的上部寬 為達成上述效果,(C)成分為下切)所表示之多元 1358465 醇。可單獨使用1種該多元醇,抑或混合2種以上來使 用。 [化學式4] X1—M—(^-R1—:N-V-X3 (1) L v I„;n 上式(1)中,R1表示碳數2〜6之伸烷基,X1〜X3為下 式(2)中所表示之官能基,X4為氫原子或下式(2)中所表 示之官能基,η表示1〜5之數字。 / 9 [化學式5]The residual film recording of f will be Wei H surface. When the content of (4) component is more than ^%, it is impossible to control _speed ^ engraving coefficient into 'right while (four) ferric ion and divalent steel controllable etchant composition When the redox of the substance is used, the copper concentration and the like can be automatically controlled, and the etchant % 驮 / □ degree can be automatically controlled, and in this case, the content of the valence neutron is changed by the _ sub. The mass% is preferably from 1 to 10% by mass. Prepare two 'for 〇.5~10 0.5% by mass, if there is less, then there will be no; = 9 Ί Ί another aspect 'When the content of divalent copper ions is 10 mass 夕 寸 ', there will be a paste composition The situation of slag. , ° penetration (through the silk fabric to improve the circuit pattern, and the propylene-based polymer poly-g diol. This high ^ is not particularly limited 'exemplified by, for example, ethylene glycol, propylene glycol and butyl:: * Ethylene oxide and alkylene oxide addenda of olefin ethyl alcohol are diol, polypropylene glycol and polybutylene glycol, etc., and ethylene oxide additions. Or use more than two kinds of combinations. The arithmetic average molecular weight of the molecular polyether diol is 1,500~3, when the arithmetic mean molecular weight is less than 1, the hour, the linearity of the shape = the shape will be reduced, and Obtaining the desired circuit pattern. On the one hand, when the arithmetic mean molecular weight is larger than 3,000, the etching will be slower or the etching efficiency will be lowered. 7-speed, the epoxide group in the polymer polyether diol When the content of the oxirane group is 15% by mass or less, the compatibility of the etchant composition may be lowered, and "&·^" may occur. When the content of the oxirane group is more than 5% by mass, the etching coefficient cannot be increased, and the period cannot be obtained. The circuit of the epoxy group and the epoxy propylene group may be distributed in a block shape or a shape. From the viewpoint of reducing the foaming property of the etchant composition, the '^ pieces are distributed in blocks. &"^ Among the polymer polyether diols, the compound represented by the formula (3) below can be used to obtain a better circuit shape, so that it is particularly preferable [Chemical Formula 3] In the above formula (3), 'R and R, a propyl group, when R is an ethyl group, R is a propyl group, when R is a propyl group, R is an ethyl group, and fb and C are such that the arithmetic mean molecular weight is 1,5 〇〇 3 And the content of the component (B) in the etchant composition is 〇〇〇1 to 3, and the mass% is preferably 0.05 to 2% by mass. When the content of the component (B) is less than the amount of _ = %, the sufficient yield can not be obtained. If the content of the component of the other component is more than 3 mass%, the viscosity of the etchant composition becomes high and the solution is high. The cooling performance is reduced by the linearity of the W-war. The lowering of the 3rd day makes the retention of the straight shape of the circuit shape to give a good circuit shape. The composition of the enclosing agent (C) is relative to The material does not have the wrong boring tool, and because of the affinity, it can also be added as the appropriate component of the (C) component, etc., and can form an effect by suppressing side etching, suppressing undercutting, and reducing And the effect of linearity, degree, etc. (4) Yan Cheng. (4) The upper part of the electric wire is wide to achieve the above effect, and the component (C) is the undercut 1358465 alcohol. One type of the polyol may be used singly or in combination of two or more. X1—M—(^-R1—: NV-X3 (1) L v I′; n In the above formula (1), R1 represents an alkylene group having a carbon number of 2 to 6, and X1 to X3 are lower. The functional group represented by the formula (2), X4 is a hydrogen atom or a functional group represented by the following formula (2), and η represents a number of 1 to 5. / 9 [Chemical Formula 5]

上式(2)中,R2及R3表示伸乙基或仲丙基,當R2 為伸乙基時R3為伸丙基,當R2為伸丙基時R3為伸乙 基,ρ及q表示使多元醇的算術平均分子量為 200〜10,000且環氧乙烷基的含量為50質量%以下之數 字。 R1所表示之炭素數2〜6之伸烷基舉例有例如伸乙 基、伸丙基、伸丁基、伸戊基、伸己基等,可將該等官 能基鍵結在任何位置,抑或為分支狀態。R2或R3所表 示之伸丙基為-CYh-CY^KY1及Y2其中一者為氫,另 一者為曱基)或-CH2-CH2-CH2-。 而在上述式(1)所表示之多元醇當中,又以R1為伸 12 3二為1,χ1〜χ4為式(2)所表示之官能基的多元醇 取传域有優㈣形狀不良防止效果,故較佳。 或謂的异數平均分子量為_〜1G,GG0,較佳 $ 2:04身當多元醇的算數平均分子量較2〇〇要小 二不充分。另-方面,當多元 开數平均分子$較1G,_要大時,則無法獲得充 分的蝕刻速度《·In the above formula (2), R2 and R3 represent an ethyl or propyl group, R3 is a propyl group when R2 is an ethyl group, and R3 is an ethyl group when R2 is a propyl group, and ρ and q are The polyol has an arithmetic mean molecular weight of 200 to 10,000 and an oxirane group content of 50% by mass or less. Examples of the alkylene group having 2 to 6 carbon atoms represented by R1 include, for example, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, etc., and the functional groups may be bonded at any position, or Branch status. The propyl group represented by R2 or R3 is -CYh-CY^KY1 and Y2 is hydrogen, the other is fluorenyl) or -CH2-CH2-CH2-. In the polyhydric alcohol represented by the above formula (1), the polyol having the functional group represented by the formula (2) wherein χ1 to χ4 is represented by the formula (2) has an excellent (four) shape defect prevention. The effect is better. Or the average molecular weight of the average number is _~1G, GG0, preferably $2:04. The arithmetic average molecular weight of the polyol is less than 2〇〇. On the other hand, when the multivariate average molecular weight is larger than 1G and _ is large, a sufficient etching rate cannot be obtained.

又,上述多元醇中之環氧乙烷基的含量為5〇質量 /〇以下’較佳為15〜5〇質量%。當環氧乙烧基的含量較 50質量%要多時,則蝕刻係數會降低,而無法獲得期望 的電路圖案。又,當環氧乙烷基的含量較15質量%要 少時’則會有無法獲得充分的使用效果之情況。Further, the content of the oxirane group in the above polyol is 5 〇 mass / 〇 or less', preferably 15 to 5% by mass. When the content of the epoxy group is more than 50% by mass, the etching coefficient is lowered to obtain a desired circuit pattern. Further, when the content of the oxirane group is less than 15% by mass, there is a case where a sufficient use effect cannot be obtained.

名虫刻組成物中之(C)成分的含量為.〇 〇〇1〜3質量%, 車父佳為0.05〜2質量%。當(C)成分的含量較0.001質量% 要少時’則無法獲得充分的使用效果。另一方面,當(C) 成分的含量較3質量%要多時,則會因滲透至光卩y界面 而發生電路形狀不良。 / (D)成分係藉由與光阻成分之樹脂或光吗/&塑劑的 .酉旨基發生反應來使光阻軟化,以抑制上述多元醇滲透至 銅與光阻的界面之成分。又’(D)成分亦對銅内面的 Ni-Cr種晶層具有促進蝕刻的效果。 (D)成分為選自磷酸及磷酸鹽之至少其中一者。磷 酸鹽舉例有例如填酸納、鱗酸鉀、碟酸詞及鱗酸敍等。 又,磷酸鹽可為酸性鹽(一氫鹽、二氫鹽)、中性鹽中任 13 1358465 :者。當磷㈣於具有縣的形狀不 果,故較佳。 欢 敍刻組成物中之⑼成分的含量為〇1〜5質量%。卷 ^成分的含量較G1質量%要少時,則無法獲得充分; 效果。另一方面’當⑼成分的含量較5質量。/〇要多 時,則導線間、導線周圍的蝕刻劑組成物會發生滯留, =法進行均句的蝴,且會因銅的再析出而發生^路 導線形狀不良。 叫 (E)成分#、具有除去㈣後之含崎料表面的铜 =或銅氣化物之絲、穩定氧化劑之功能、提高相對 =鋼材㈣平域之魏,而為―種能触賴刻之 戚匀係選自氣化氫及碗酸之至少其中一者。 a蝕刻組成物中之⑹成分的含量為〇 0^ 〇質量%。 二⑻成分的含量較⑽5 f量%要少時則無法獲得充 =使用效果。另一方面’當(E)成分的含量較1〇質量 ^要多時’職刻會變得過剩,而變得無法控制钱刻速 &。其結果便會發生電路導線形狀不良。 本發明之蝕刻劑組成物在不阻礙本發明效果的範 阁内,除了以上所説明之必要成分(A)〜(E)以外,可添 ^使用於該用途之公知的任意成分。任意成分舉例有二 醇麵類化合物,(B)及(C)成分以外的界面活性劑, 及(E)成分以外的無機酸、有機酸、胺基酸類化合物、 唑類化合物、嘧啶類化合物、硫脲類化合物、胺類化人 14 喃化合物'有機整合劑化合物、聚丙婦 二女犬、_ I、過敦化氫、過硫酸鹽、無機鹽、-價銅 離子。使用該等任意成分時,濃度一般來 .况“於〇·001質量%,質量%的範圍。 —二醇_化合物舉例有例如乙二 、乙二 醇單乙,喊、乙二醇單丁基⑽、二乙二基—、二 乙二醇單乙基喊、二乙二醇單丁㈣、三乙二醇單曱基The content of the component (C) in the insect-like composition is 〇 〜 1 to 3 mass%, and the car father is 0.05 to 2 mass%. When the content of the component (C) is less than 0.001% by mass, a sufficient use effect cannot be obtained. On the other hand, when the content of the component (C) is more than 3% by mass, the circuit shape is deteriorated due to penetration into the interface of the pupil y. / (D) component softens the photoresist by reacting with the resin of the photoresist component or the photoreceptor of the photoreceptor to inhibit the penetration of the above polyol into the interface between the copper and the photoresist. . Further, the component (D) also has an effect of promoting etching on the Ni-Cr seed layer on the inner surface of the copper. The component (D) is at least one selected from the group consisting of phosphoric acid and phosphate. Examples of the phosphate salt include sodium sulphate, potassium sulphate, acid sulphate, and squamous acid. Further, the phosphate may be an acidic salt (monohydrogen salt, dihydrogen salt) or a neutral salt of 13 1358465:. Phosphorus (4) is preferred if it has a shape in the county. The content of the component (9) in the composition of the composition is 〇1 to 5% by mass. When the content of the volume ^ component is less than the mass% of G1, sufficient effect cannot be obtained. On the other hand, the content of the component (9) is 5 mass. If there is a long time, the etchant composition between the wires and the wires will be retained, and the = method will be used to perform the butterfly of the uniform sentence, and the shape of the wire will be poor due to the re-precipitation of the copper. It is called (E) component #, has the function of removing the copper surface of the buckwheat surface after removing (4), or the function of stabilizing the oxidant, and improving the relative = steel (4) Wei of the flat domain, and it is a kind of The mash is selected from at least one of hydrogenated hydrogen and bowl acid. The content of the component (6) in the a-etching composition is 〇 0^ 〇 mass%. When the content of the second (8) component is less than the amount of (10) 5 f, the charge effect cannot be obtained. On the other hand, when the content of the (E) component is more than 1 〇 mass ^, the job becomes excessive and becomes uncontrollable. As a result, the shape of the circuit wire is poor. The etchant composition of the present invention can be added to any known component of the use in addition to the essential components (A) to (E) described above, without impairing the effects of the present invention. Examples of the optional component include a diol-based compound, a surfactant other than the components (B) and (C), and an inorganic acid, an organic acid, an amino acid compound, an azole compound, or a pyrimidine compound other than the component (E). Thiourea compounds, amine-like human 14-anthracene compounds 'organic integrator compounds, polyacrylonitrile female dogs, _ I, hydrogen peroxide, persulfate, inorganic salts, valence copper ions. When these optional components are used, the concentration is generally "in the range of 〇 001 % by mass, and the % by mass. - diol _ compounds are exemplified by, for example, ethylene glycol, ethylene glycol monoethyl, screaming, ethylene glycol monobutyl. (10), diethylenediyl-, diethylene glycol monoethyl shrine, diethylene glycol monobutyl (tetra), triethylene glycol monodecyl

醚:二乙—醇單乙基醚、三乙二醇單丁基鍵、兩二醇單 曱基驗、丙二酿留甘 醇早乙基醚、丙二醇單丁基醚、二丙二醇 單曱、二丙二醇單乙基趟、二丙二醇單丁基酿、三 丙二醇f甲基鍵、三丙二醇單乙基醚及3_甲基-3-曱氧 基-3-曱氧基τ醇等低分子二賴化合物;聚乙二酿單甲 基醚、聚乙二醇單乙基醚及聚乙二醇單丁基醚等高分子 二醇醚化合物。料可單獨或混合2種以上來使用。Ether: diethyl alcohol monoethyl ether, triethylene glycol monobutyl bond, diglycol monoterpene test, propylene glycol, early glycol ethyl ether, propylene glycol monobutyl ether, dipropylene glycol monoterpene, dipropylene glycol Low molecular weight compound such as monoethyl hydrazine, dipropylene glycol monobutyl styrene, tripropylene glycol f methyl bond, tripropylene glycol monoethyl ether and 3-methyl-3-decyloxy-3-decyloxy tau A high molecular weight glycol ether compound such as polyethylene glycol monomethyl ether, polyethylene glycol monoethyl ether or polyethylene glycol monobutyl ether. The materials may be used alone or in combination of two or more.

界面/舌性劑舉例有例如陰離子性界面活性劑、(B) 及(C)成分以外的非離子性界面活性劑、陽離子性界面 活性劑及兩性界面活性劑等。 έ ^陰離子性界面活性劑舉例有例如高級脂肪酸鹽、高 及=硫馱酯鹽、硫化烯烴鹽、高級烷基磺酸鹽、α—烯 酸鹽、硫酸化脂肪酸鹽、磺化脂肪酸鹽、磷酸酯鹽、 月=肪酸酯之硫酸酯鹽、背油酯硫酸酯鹽、脂肪酸酯之磺 酉^鹽、磺基脂肪酸甲基酯鹽、聚氧伸烷基烷醚硫酸 ·=鹽、聚氧伸烷基烷基苯醚硫酸酯鹽、聚氧伸烷基烷醚 故酸鹽、醯化胜肽、脂肪酸烷基醯胺或其環氡烷附加物 15 的硫酸酯鹽、磺基琥珀酸酯、烷基笨磺酸鹽、烷基萘續 酸鹽、烷基笨并咪唑磺酸鹽、聚氧伸烷基磺基琥珀酸 鹽、Νϋ基曱基牛項酸的鹽、N-醯基麵胺酸或其鹽、 醯氧基乙磺酸鹽、烷氧基乙磺酸鹽、Ν-醯基丙胺酸 或其鹽、Ν-醯基-Ν-幾乙基牛石黃酸或其鹽、Ν- 0¾基-幾曱基甘胺酸或其鹽、醯基乳酸鹽、:Ν-酿基肌胺酸鹽及 烷基或烯基胺基羧f基硫酸鹽等。 非離子性界面活性劑舉例有例如聚氧伸烷·基燒 醚、聚氧伸烷基烯醚、聚氧乙烯聚氧丙烯烷醚(環氧乙 烧與環氧丙烷的附加形態可為雜亂狀、塊狀任一者)、 聚乙二醇環氧丙烷附加物、聚丙二醇環氧乙烷附加物、 伸烷基二胺的環氧乙烷與環氧丙烷之雜亂狀或塊狀附 加物、甘油脂肪酸酯或其環氧乙烷附加物、山梨醇脂肪 酸酯、聚氧乙烯山梨醇脂肪酸酯、烷基聚葡萄糖苷、脂 肪酸單乙醇胺或其環氧乙烧附加物、脂肪酸曱基單 乙醇胺或其環氧乙烧附加物、脂肪酸二乙醇胺或其環氧 乙烷附加物、蔗糖脂肪酸酯、烷基(聚)甘油醚、聚甘油 脂肪酸酯、聚乙二醇脂肪酸酯、脂肪酸甲酯乙氧基化物 及N-長鏈環氧烧基二曱基胺等。 陽離子性界面活性劑舉例有例如烷基(烯基)三曱基 敍鹽、二炫基(烯基)二甲基銨鹽、烧基(烤基)四級銨鹽、 含有醚基、酯基或胺基之單烷基或二烷基(烯基)四級銨 鹽、烷基(烯基)吡啶鹽、烷基(烯基)二曱基苄基銨鹽、 烷基(烯基)異喹啉鹽、二烷基(烯基)嗎啉鹽、聚氧乙烯 1358465 . * t · ^ 嫁基(烯基)胺、燒基(婦基)胺鹽、聚胺脂肪酸衍生物、 戊醇脂肪酸衍生物、氣化苯二曱烴銨及氯化苯銨松寧 等。 兩性界面活性劑舉例有例如羧基甜菜鹼、磺基甜菜 驗、構酸基甜菜驗、酸胺胺基酸及咪嗤甜菜驗系界面活 性劑等。上述界面活性劑可單獨或混合2種以上來使 用。 無機酸舉例有例如墙酸、聚罐酸等。該等可單獨或 φ 混合2種以上來使用。 有機酸舉例有甲酸、乙酸、丙酸、丁酸、戊酸、蔡 酸、丙烯酸、巴豆酸 '異巴豆酸、修酸、丙二酸、琥珀 酸、戊二酸、已二酸、庚二酸、順丁烯二酸、反丁烯二 酸、草酸、蘋果酸、酒石酸、檸檬酸、甘醇酸、乳酸、 磺胺酸、菸鹼酸、抗壞血酸、.羥基新戊酸、果糖酸及召 -氯丙酸等之叛酸類;甲續酸、乙礦酸、2_經乙續酸、丙 磺酸、苯磺酸及曱苯磺酸等之有機磺酸類。該等可單獨 聲 或混合2種以上來使用。 胺基酸類化合物舉例有例如甘胺酸、丙胺酸、纈氨 酸、白胺酸、絲胺酸、笨丙胺酸、色胺酸、麩胺酸、天 冬胺酸、離胺酸、筋胺酸及組胺酸等之胺基酸及該等鹼 金屬鹽及銨鹽等。料可翔或混合2種以上來使用。 °坐類化合物舉例有例如咪嗅、2曱基σ米咬、2_十一 基-4-甲基咪唑、2-苯基咪唑、2_甲基苯并咪唑等之烷基 咪唑類;笨并咪唑、2-曱基笨并咪唑、2_十一基苯并咪 17 嗤、2-笨基苯并咪w坐、2-硫醇苯并味嗤等之苯并_ σ坐類; 1,2,3-二°坐、1,2,4-三嗤、5-苯基-1,2,4-三嗤、5-胺基-124- 三唑、1,2,3-苯并三唑、1-胺基苯并三唑、4-胺基苯并三 唑、1-雙胺基曱基苯并三唑、1-甲基-苯并三唑、甲基笨 并三氮唑、1-羥苯并三唑、5-甲基-1Η-笨并三唑、5-氣 苯并三°坐等之三°坐類;1Η-四唾、5-胺基-1Η-四嗤、5甲 基-1Η-四唑、5-苯基-1Η-四唑、5-硫醇基-1Η-四唾、1_ 苯基-5-硫醇基-1Η-四嗤、1·環己基-5-硫醇基-1Η-四n坐、 5,5’-雙-1H-四唑等之四唑類;笨并噻唑、2_硫醇笨并〇塞 唑、2-苯基噻唑、2-胺基苯并噻唑、2-胺基-6-亞苯并售 嗤、2-胺基-6-甲氧基苯并嗟咬、2-胺基氣苯并嗟。坐等 之噻唑類。該等可單獨或混合2種以上來使用。 嘧啶類化合物舉例有例如二胺基嘧啶、三胺基嘧 咬、四胺基細及辆錢等。料可單獨或混合2種 以上來使用。 硫脲類化合物舉例有例如硫脲、伸乙基硫脲及硫 甘醇、硫料。料可翔或混合2種以上來使用。 二丁基胺、三乙 、三乙醇胺、單 乙醇異丙醇胺、 胺類化合物舉例有例如二戊基胺、 基胺、二戊基胺、單乙醇胺、二乙醇胺 異丙醇胺、一異丙醇胺、三異丙醇胺、 二乙醇異丙醇胺 使用。 ,及該等d等:獨=== 曱基-2-吡咯酮The interface/tongue agent is exemplified by, for example, an anionic surfactant, a nonionic surfactant other than the components (B) and (C), a cationic surfactant, and an amphoteric surfactant. έ ^ anionic surfactants are exemplified by, for example, higher fatty acid salts, high and thiol ester salts, sulfurized olefin salts, higher alkyl sulfonates, α-enoates, sulfated fatty acid salts, sulfonated fatty acid salts, phosphoric acid Ester salt, sulfate salt of fatty acid ester, petroleum ester ester of back oil ester, sulfonium salt of fatty acid ester, methyl ester of sulfo fatty acid, polyoxyalkylene ether sulfate, salt, poly Oxyalkylene alkyl phenyl ether sulfate salt, polyoxyalkylene alkyl ether salt, sulfonated peptide, fatty acid alkyl decylamine or its cyclodecane addendum 15 sulfate salt, sulfosuccinic acid Esters, alkyl sulfonates, alkyl naphthenates, alkyl oxaidazolium sulfonates, polyoxyalkylene sulfosuccinates, salts of decyl fluorenyl ornithyl, N-fluorenyl A face acid or a salt thereof, a decyloxyethanesulfonate, an alkoxyethanesulfonate, a decyl-mercaptoic acid or a salt thereof, or a fluorenyl-fluorenyl-indole-ethyl tartaric acid or a salt thereof , Ν - 03⁄4 yl-mercapto-glycine or a salt thereof, decyl lactate, hydrazine-bristinate, and alkyl or alkenylamino carboxy-f-sulfate. Examples of the nonionic surfactant are, for example, polyoxyalkylene-based alkyl ether, polyoxyalkylene alkylene ether, polyoxyethylene polyoxypropylene alkyl ether (additional form of ethylene oxide and propylene oxide may be disordered) Any of the blocks, polyethylene glycol propylene oxide addenda, polypropylene glycol oxirane addenda, heterogeneous or bulky additions of ethylene oxide and propylene oxide with alkyl diamines, Glycerol fatty acid ester or its ethylene oxide addenda, sorbitan fatty acid ester, polyoxyethylene sorbitan fatty acid ester, alkyl polyglucoside, fatty acid monoethanolamine or its epoxy ethoxide addendum, fatty acid thiol Ethanolamine or its epoxy Ethylene add-on, fatty acid diethanolamine or its ethylene oxide addenda, sucrose fatty acid ester, alkyl (poly) glyceryl ether, polyglycerin fatty acid ester, polyethylene glycol fatty acid ester, fatty acid Methyl ester ethoxylate and N-long chain epoxy alkyl decylamine. The cationic surfactant is exemplified by, for example, an alkyl (alkenyl) tridecyl salt, a diheptyl (alkenyl) dimethyl ammonium salt, a pyrenyl (baked) quaternary ammonium salt, an ether group, and an ester group. Or an amine monoalkyl or dialkyl (alkenyl) quaternary ammonium salt, an alkyl (alkenyl) pyridinium salt, an alkyl (alkenyl) dimercaptobenzyl ammonium salt, an alkyl (alkenyl) Quinoline salt, dialkyl (alkenyl) morpholine salt, polyoxyethylene 1358465. * t · ^ graft (alkenyl) amine, alkyl (base) amine salt, polyamine fatty acid derivative, pentanol fatty acid Derivatives, gasified benzodiazepine ammonium and benzyl ammonium chloride, and the like. The amphoteric surfactants are exemplified by, for example, a carboxybetaine, a sultain beet test, an acid-based beet test, an acid amine amino acid, and an amido beet test interfacial activator. The above surfactants may be used singly or in combination of two or more. Examples of the inorganic acid include, for example, wall acid, poly-pot acid, and the like. These may be used alone or in combination of two or more. Examples of the organic acid include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, cholic acid, acrylic acid, crotonic acid 'isocrotonic acid, acid repair, malonic acid, succinic acid, glutaric acid, adipic acid, and pimelic acid. , maleic acid, fumaric acid, oxalic acid, malic acid, tartaric acid, citric acid, glycolic acid, lactic acid, sulfamic acid, nicotinic acid, ascorbic acid, hydroxypivalic acid, fructose, and chlorinated An acid sulfonic acid such as propionic acid; an acid sulfonic acid such as a phthalic acid, an ethyl sulphate, a sulphuric acid, a propane sulfonic acid, a benzene sulfonic acid or an benzene sulfonic acid. These can be used alone or in combination of two or more. Examples of the amino acid compound are, for example, glycine, alanine, valine, leucine, serine, albendine, tryptophan, glutamic acid, aspartic acid, lysine, glutamic acid. And an amino acid such as histidine or the like, and an alkali metal salt or an ammonium salt. It can be used in combination or in combination of two or more. Examples of the compound of the sitting type are, for example, alkyl imidazoles such as olfactory, 2-mercapto- σ-methane, 2-indenyl-4-methylimidazole, 2-phenylimidazole, 2-methylbenzimidazole, and the like; a benzo- σ sitting group of imidazole, 2-mercaptobenzimidazole, 2-11-phenylbenzopyrene, 2-phenylbenzopyrene, 2-thiol benzopyrene, etc.; , 2,3-two-degree sitting, 1,2,4-trimethyl, 5-phenyl-1,2,4-trimethyl, 5-amino-124-triazole, 1,2,3-benzo Triazole, 1-aminobenzotriazole, 4-aminobenzotriazole, 1-diaminomercaptobenzotriazole, 1-methyl-benzotriazole, methyl benzotriazole , 1-hydroxybenzotriazole, 5-methyl-1Η-stuppyrazole, 5-gas benzotriene, etc., three-degree sitting; 1Η-tetrasodium, 5-amino-1Η-tetrazine, 5methyl-1Η-tetrazole, 5-phenyl-1Η-tetrazole, 5-thiol-1Η-tetrasodium, 1-phenyl-5-thiol-1Η-tetrazole, 1·cyclohexyl- 5-thiol-1-pyrene-tetrazine, 5,5'-bis-1H-tetrazole, etc. tetrazolium; stupid thiazole, 2-thiol benzoxazole, 2-phenylthiazole, 2 - Aminobenzothiazole, 2-amino-6-benzoene sold out, 2-amino-6-methoxybenzoindole, 2-aminobenzoquinone. Wait for the thiazoles. These may be used alone or in combination of two or more. Examples of the pyrimidine compound include, for example, a diaminopyrimidine, a triamine-based pyrimidine, a tetraamine-based fine, and a money. The materials may be used alone or in combination of two or more. Examples of the thiourea compound include thiourea, ethyl thiourea, and thioglycol, and sulfur. It can be used in combination or in combination of two or more. Dibutylamine, triethylamine, triethanolamine, monoethanol isopropanolamine, and amine compounds are exemplified by, for example, diamylamine, amine, dipentylamine, monoethanolamine, diethanolamine isopropanolamine, and isopropylidene. Alcoholamine, triisopropanolamine, diethanol isopropanolamine are used. And such d, etc.: alone === mercapto-2-pyrrolidone

烧基轉_化合物舉例有例如N N-乙其q 仏戊ί ·Π咯酮、N•丙基吡咯酮、N_丁基·2-吡咯酮、 及各綱、Ν'"己基-2-°比略酉同、Ν-庚基-2-°比口各酮 來使用。基Ή心時^該等可單獨或混合2種以上 乙:胶機養口劑化合物舉例有例士口乙二⑮四醋酸、二伸 —胺五酷Examples of the pyrolysis compound include, for example, N N-ethylidene, quinolone, N-propylpyrrolidone, N-butyl-2-pyrrolidone, and various classes, Ν'"Hexyl-2 -° is slightly different, and Ν-heptyl-2-° is used in comparison to each ketone. When you are at the heart of the heart ^ These can be used alone or in combination of more than 2 types. B: The compound of the gum machine is exemplified by Shishikou E 2 145 acetic acid, di-extension - amine five cool

酸、五伸二伸乙四胺六醋酸、四伸乙五胺七醋 銨鷗裳^六胺八醋酸、三甘胺酸及該等之鹼金屬鹽及 臂5亥等可單獨或藏合2種以上來使用。 ^制胺類化合物舉例有例如聚丙烯醯胺及卜 用t歸醒胺石買酸等。該等可單獨或混合2種以上來使 過瓜I鹽舉例有例如過硫酸銨、過硫酸納及過硫酸 該等可單獨或混合2種以上來使用。 無,鹽,例有例如氣化鈉、⑽_、絲錄、碳酸 二t '氫鈉、碳酸氫鉀、碳酸銨、碳酸鈉、碳酸鉀、Acid, Wushen, Diethylenetetraamine hexaacetate, Tetraethylene, Ethylamine, Ammonium, Gua, hexamine, hexamine, triglycine, and the alkali metal salts and arms, can be used alone or in combination. Use above. The amine-producing compounds are exemplified by, for example, polyacrylamide and b. These may be used singly or in combination of two or more kinds, and for example, ammonium persulfate, sodium persulfate, and persulfuric acid may be used alone or in combination of two or more. No, salt, such as sodium carbonate, (10) _, silk recorded, sodium dihydrogen bromide, potassium bicarbonate, ammonium carbonate, sodium carbonate, potassium carbonate,

友=銨、硫酸鈉、硫酸鉀、硝酸鈉、硝酸鉀、硝酸銨、 氣駚銨、氯酸鈉及氯酸鉀等。該等可單獨或混合2種以 上來使用。 供給一價銅離子之化合物舉例有例如氯化銅(1)、溴 化鋼(Ϊ)、硫酸銅(I)及氫氧化銅(1)等。又,供給二價鐵離 子之化合物舉例有例如氯化鐵(11)、溴化鐵(11)、碘化鐵 (11)、硫酸鐵(II)、硝酸鐵(II)及醋酸鐵(II)等。該等可單 獨或混合2種以上來使用。 上述任意成分當中’特別適於添加的成分為二價鐵 19 1358465 離子。有關於蝕刻劑組成物的蝕刻能力,在利 四 原電位或比重、酸濃度、銅濃度等來進行自動控= 二價鐵離子時劑組成物中 的一饧鐵離子含置以二價鐵離子來換算為〜5 %。當二價鐵離子的含量較〇」f量%要少 = 獲得充分的使用效果。另一方而a 、 'j…法 h所旦。 另方面當二價鐵離子的含量 較5貝K要多時,則蝕刻能力等會降低。 以混且成物儀 合裝置來混^卩^ ^未特別限疋’使用公知-的混 較佳得之相刻劑組成物的比重 獲得充分的麵刻迷較L10要小時,則會有無法 面,當比重較13Π 刻係數降低之情況。另一方 況。 .3〇要大時,則會有蝕刻係數降低之情 圖案,但從形狀;^物雖可在含銅才才料形成微細 則特別適於衫絲及侧速度的觀點來看, 材料的圖案化。又,〇em、蝕刻間隙1〜10以坩之含銅 25em以下, ^虫,亦可適用於厚度大於1〇wm •但為 含鋼材料的圖案化隙大於10 β m但為40 “ m以下之 刻可使用公知蝕刻劑組成物來進行含銅材料的蝕 料舉例有銀鋼人二的方法來進行。被蝕刻材料之含銅材 *銘錦合金等之銅合金及鋼,又以銅 20 1358465 為特佳。又,蝕刻方法亦未特別限定,可使用浸潰法或 噴塗法等’而關於钮刻條件,只要配合所使用之蝕刻劑 組成物或蝕刻方法來適當地調整即可。再者,亦可使用 批次式(batch type)、流動式(flow type)、利用蝕刻劑的 氧化還原電位或比重、酸濃度而進行之自動控制式等公 知的各種方式》 利用喷.塗法並使用本發明之蝕刻劑組成物時,較佳 地處理溫度為30〜5〇°C,處理壓力為0 03〜〇2MPa,處 理時間為20〜300秒。 又,利用本發明的蝕刻劑組成物所進行之蝕刻方法 中,為了回復因重複地進行蝕刻而使得溶液劣化,亦寸 添加補充液。特別是上述自動控制式之蝕刻方法中,補 充液係被預先安裝在蝕刻裝置,當溶液劣化時則會被添 加至姓刻劑組成物。該補充液為例如(A)成分、(E)成分 及水’(A)成分及(E)成分的濃度為蝕刻劑組成物的卜2〇 .倍左右。又,該補充液中,亦可依需要來添加本發明蝕 刻劑組成物的(B)〜(D)成分或任意成分。 由於本發明之蝕刻劑組成物能夠無形狀不良地形成 微細圖案,故除了印刷電路板以外,亦可適用於要求微 細間距之封裝用基板、C〇F、TAB用途之減成法。 [實施例] 以下雖係利用實施例及比較例來詳細説明本發 明’但本發縣未限定於鱗實關及比較例。 將下述貫施例及比較例中所使用之高分子聚醚二 21 1358465 醇及多元醇顯示於表1及表2。 [表1] 高分子聚 醚二醇 種類 算數平均分子量 環氧乙烧基的含 量(質量%) a-1 聚丙二醇的環 氧乙烷附加物 2,200 40 a-2 // 2,500 20 a-3 // 4,200 40 a-4 聚乙二醇 2,000 100Friends = ammonium, sodium sulfate, potassium sulfate, sodium nitrate, potassium nitrate, ammonium nitrate, ammonium citrate, sodium chlorate and potassium chlorate. These may be used alone or in combination of two or more. Examples of the compound which supplies monovalent copper ions include copper chloride (1), brominated steel (iron), copper (I) sulfate, and copper hydroxide (1). Further, examples of the compound which supplies divalent iron ions include iron chloride (11), iron bromide (11), iron iodide (11), iron (II) sulfate, iron (II) nitrate, and iron (II) acetate. Wait. These may be used alone or in combination of two or more. Among the above-mentioned arbitrary components, the component which is particularly suitable for addition is ferrous iron 19 1358465 ion. Regarding the etching ability of the etchant composition, automatic control is performed at the original potential or specific gravity, acid concentration, copper concentration, etc. = ferrous iron ion, the bismuth iron ion in the composition contains ferrous ions To convert to ~5 %. When the content of divalent iron ions is less than the amount of 〇"f" = sufficient effect is obtained. The other side, a, 'j... method h. On the other hand, when the content of divalent iron ions is more than 5 K, the etching ability and the like are lowered. Mixing and mixing the device with the device is not particularly limited to the use of a well-known mixture of the preferred composition of the phase engraving agent to obtain a sufficient surface engraving than the L10, it will be impossible Face, when the specific gravity is lower than the 13Π coefficient. The other situation. .3 When the size is large, there will be a pattern of lowering the etching coefficient, but from the shape; the material can be formed in the form of copper, and the micro-rules are particularly suitable for the view of the silk and the side speed. Chemical. Moreover, 〇em, etching gap 1~10, copper containing 25em or less, worm, can also be applied to a thickness greater than 1〇wm • but the patterning gap of the steel-containing material is greater than 10 β m but less than 40 μm The etching of the copper-containing material can be carried out by using a known etchant composition, for example, a method of using silver steel. The copper alloy of the material to be etched, the copper alloy and the steel of the Mingjin alloy, and the copper 20 Further, the etching method is not particularly limited, and a dipping method, a spray method, or the like can be used, and the button etching condition can be appropriately adjusted by using an etchant composition or an etching method to be used. It is also possible to use a batch type, a flow type, an automatic control method using an oxidation-reduction potential or a specific gravity of an etchant, and an acid concentration, and the like. When the etchant composition of the present invention is used, the treatment temperature is preferably 30 to 5 ° C, the treatment pressure is 0 03 to 〇 2 MPa, and the treatment time is 20 to 300 seconds. Further, the etchant composition of the present invention is utilized. In the etching method performed, in order to return The solution is degraded by repeated etching, and the replenishing liquid is also added. In particular, in the above-mentioned automatic control type etching method, the replenishing liquid is preliminarily installed in the etching device, and when the solution is deteriorated, it is added to the surname composition. The replenishing liquid is, for example, the concentration of the component (A), the component (E), and the water component (A) and the component (E) is about 2 times the etchant composition. Further, in the replenishing solution, The component (B) to (D) or the optional component of the etchant composition of the present invention may be added as needed. Since the etchant composition of the present invention can form a fine pattern without a shape defect, in addition to the printed circuit board, It can be applied to a substrate for packaging requiring fine pitch, and a method for reducing the use of C〇F and TAB. [Examples] Hereinafter, the present invention will be described in detail by way of examples and comparative examples, but the present invention is not limited to scales. Comparative Example The polymer polyether 21 21358465 alcohol and polyol used in the following examples and comparative examples are shown in Tables 1 and 2. [Table 1] Polymer polyether diol type arithmetic average Molecular weight epoxy ethyl ketone (Mass%) a-1 polypropylene glycol ethylene oxide addenda 2,200 40 a-2 // 2,500 20 a-3 // 4,200 40 a-4 20 Polyethylene glycol 100

[表2] 多元醇 種類 算數平均分 子量 環氧乙烷基的含 量(質量%) b-1 伸乙基二胺之環氧丙烷及環氧乙烷的 塊狀附加物 式(1)中,R>伸乙基,n=l,R2=伸丙 基,R3=伸乙基,XV氫 280 40 b-2 // 580 40 b-3 // 1,3〇〇 40 b-4 乙二胺之環氧丙烷附加物 式(1)中,R1=伸乙基,n=l,q=0, R2=伸丙基,X4參氫 300 0 b-5 乙二胺之環氧丙烷基及環氧乙烷的塊 狀附加物 式(1)中,伸乙基,n=l,R2=伸丙 基,R3=伸乙基,XV氫 3,500 20 b-6 // 5,000 40 (實施例1) 將表1及表2所示之高分子聚醚二醇及多元醇、氣 22 1358465 .化三償鐵(4.9質量%)、氣化二價銅(6.6質量%)、磷酸、 氯化氫以表3的組成來混合而獲得蝕刻劑組成物 No.1〜11。表3中,氯化三價鐵的含量係以三價鐵離子 換算的含量,而氯化二價銅的含量係以二價銅離子換算 的含量來表示。又,含量的殘餘部分為水。 (比較例1) 與實施例1同様地,以表3的組成來將各成分混合 而獲得钮刻劑組成物No.12〜19。 [表3] 1 蝕刻 組成(質量%) 劑組 三價鐵 二價銅 南分子聚_ 多元醇 磷酸 氯化氫 成物 離子 離子 二醇 No. 1 1.7 3.1 a-1(0.4) b-l(1.2) 0.9 0.2 2 1.7 3.1 a-1(0.4) b-2(1.2) 0.9 0.2 3 1.7 」 3.1 a-1(0.3) b-2(0.6) 0.9 0.2 4 1.7 」 3.1 a-1(0.8) b-2(1.2) 0.9 0.2 5 1.7 3.1 a-1(0.4) b-3(1.2) 0.9 0.2 6 「1.7 3.1 a-1(0.3) b-3(0.6) 0.9 0.2 7 1.7 3.1 a-1(0.8) b-3(1.2) 0.9 0.2 8 1.7 3.1 a-l(0.4) b-4(1.2) 0.9 0.2 9 1.7 3.1 a-l(0.4) b-5(1.2) Γθ.9 0.2 10 1.7 3.1 a-1(0.4) b-6(1.2) 0.9 0.2 11 1.7 3.1 —a-2(0.4) b-2(1.2) 0.9 0.2 —12 1.7 3.1 - 0.9 0.2 13 1.7 3.1 a-l(0.4) - 0.9 0.2 14 1.7 3.1 - b-l(1.2) 0.9 0.2 —15 1.7 3.1 - b-2(1.2) 0.9 0.2 23 1358465 16 1.7 3.1 • b-3(1.2) 0.9 .0.2 17 1.7 3.1 - b-4(1.2) 0.9 0.2 18 1.7 3.1 a-3(0.4) b-2(1.2) 0.9 0.2 19 1.7 3.1 a-4(0.4) b-2(1.2) 0.9 0.2 (實施例2) 於鋼厚8#m的C〇F捲帶基材(158mmxl〇〇mm)塗 布光阻(PMER-P ;臬京應化股份有限公司製)並乾燥 後,利用曝光裝置(UFX-2458B ; USHIO電機股份有限 公司製)來進行曝光,並藉由進行顯影及沖洗,來形成 間距(pitch)20 a m及間隙(space)6以m的光阻圖案。 接下來,針對形成有光阻圖案之c〇F捲帶基.材, 利用上述蝕刻劑組成物並在處理溫度45ΐ、 處理壓力0.05MPa的條件下,藉由在可達到適量飯刻 (Just etching)的秒數(604 00秒)期間進行喷塗來實施渴 敍刻。_,利用光阻去除劑(丙酮)來去除光阻圖案’,'、、 而狻得銅電針對所獲得之銅電路圖案的形狀而 進行以下評估。 (1)直線性 利用KEYENCE股份有限公司 觀察銅電關㈣形狀,並^線宽 U見來 rc 1 + ^ 深見的偏移未達1/zm者 為5」’1;^以上未達h7心者為 上未達2.4/zm者為「3」,2.4&上去以以 」向進仃5階段的評估。 (2)導線上部寬度(頂部寬度) 24 利用雷射顯微鏡像來進行測定。 (3)敍刻係數 利用下式來算出。 式中,τ為頂部寬度(μιη), (4)殘膜[Table 2] Polyol type arithmetic mean molecular weight oxiranyl group content (% by mass) b-1 Ethyl diamine propylene oxide and ethylene oxide bulk addition formula (1), R> Ethyl, n=l, R2=extended propyl, R3=extended ethyl, XV hydrogen 280 40 b-2 // 580 40 b-3 // 1,3〇〇40 b-4 ethylenediamine Propylene oxide addition formula (1), R1 = extended ethyl group, n = l, q = 0, R2 = extended propyl, X4 hydrazine 300 0 b-5 ethylenediamine propylene oxide group and epoxy a bulk addition of ethane in formula (1), an ethyl group, n = 1, R2 = a propyl group, R3 = an ethyl group, XV hydrogen 3,500 20 b-6 // 5,000 40 (Example 1) The polymer polyether diols and polyols shown in Tables 1 and 2, gas 22 1358465. Three irons (4.9 mass%), vaporized divalent copper (6.6 mass%), phosphoric acid, and hydrogen chloride are shown in Table 3. The composition was mixed to obtain etchant compositions No. 1 to 11. In Table 3, the content of ferric chloride is expressed in terms of trivalent iron ions, and the content of divalent copper chloride is expressed in terms of divalent copper ions. Also, the residual portion of the content is water. (Comparative Example 1) In the same manner as in Example 1, the components were mixed in the composition of Table 3 to obtain the button composition Nos. 12 to 19. [Table 3] 1 Etching composition (% by mass) Agent group Ferric iron divalent copper south molecular poly_ Polyol phosphoric acid hydrogen chloride ion ionic diol No. 1 1.7 3.1 a-1 (0.4) bl (1.2) 0.9 0.2 2 1.7 3.1 a-1(0.4) b-2(1.2) 0.9 0.2 3 1.7 ” 3.1 a-1(0.3) b-2(0.6) 0.9 0.2 4 1.7 ” 3.1 a-1(0.8) b-2(1.2 ) 0.9 0.2 5 1.7 3.1 a-1(0.4) b-3(1.2) 0.9 0.2 6 "1.7 3.1 a-1(0.3) b-3(0.6) 0.9 0.2 7 1.7 3.1 a-1(0.8) b-3 (1.2) 0.9 0.2 8 1.7 3.1 al(0.4) b-4(1.2) 0.9 0.2 9 1.7 3.1 al(0.4) b-5(1.2) Γθ.9 0.2 10 1.7 3.1 a-1(0.4) b-6( 1.2) 0.9 0.2 11 1.7 3.1 —a-2(0.4) b-2(1.2) 0.9 0.2 —12 1.7 3.1 — 0.9 0.2 13 1.7 3.1 al(0.4) - 0.9 0.2 14 1.7 3.1 - bl(1.2) 0.9 0.2 — 15 1.7 3.1 - b-2(1.2) 0.9 0.2 23 1358465 16 1.7 3.1 • b-3(1.2) 0.9 .0.2 17 1.7 3.1 - b-4(1.2) 0.9 0.2 18 1.7 3.1 a-3(0.4) b- 2(1.2) 0.9 0.2 19 1.7 3.1 a-4(0.4) b-2(1.2) 0.9 0.2 (Example 2) Coating light on a C〇F tape substrate (158 mm×l〇〇mm) having a steel thickness of 8 #m Resistance (PMER-P; manufactured by 臬京应化股份有限公司) and dried, using exposure The exposure (UFX-2458B; manufactured by USHIO Motor Co., Ltd.) was used for exposure, and development and rinsing were performed to form a photoresist pattern having a pitch of 20 am and a space of 6 m. Forming a c〇F tape base material having a photoresist pattern, using the above etchant composition at a treatment temperature of 45 Torr and a treatment pressure of 0.05 MPa, by the number of seconds at which a proper amount of Just etching can be achieved Spraying during (604 00 seconds) to carry out a thirst narration. _, the photoresist pattern (, acetone) was used to remove the photoresist pattern ', ', and copper was evaluated for the shape of the obtained copper circuit pattern. (1) Linearity Use KEYENCE Co., Ltd. to observe the shape of the copper power switch (4), and ^ line width U see rc 1 + ^ The offset of the deep view is less than 1/zm is 5"'1; ^ is not up to h7 heart Those who have not reached 2.4/zm are "3", 2.4& go up to "advance to the 5th stage of evaluation." (2) Upper wire width (top width) 24 The measurement was performed using a laser microscope image. (3) The quotation coefficient is calculated by the following formula. Where τ is the top width (μιη), (4) residual film

致,KEYENCE公51製的雷射顯微賴進行之觀 %,來觀察侧部分的殘餘。以無綱部分的殘餘者為 仕」,姓刻部分的殘餘多者為「!」❿進行5階段的砰 (5)敍刻速度 針對捲帶基材進行3G秒的濕似彳處理,並求得該 J處理前後的捲帶基材質量差(所溶出之銅),而利用 下式來算出。又,單位為私m/分。To the KEYENCE, the laser microscopic system of the 51st system is used to observe the residual of the side part. The remnant of the non-existing part is the official one. The remaining part of the surname is “!”, and the 5-stage 砰(5) scribe speed is performed on the tape substrate for 3G seconds of wet 彳 processing. The quality of the tape substrate before and after the J treatment (the copper to be eluted) was obtained, and was calculated by the following formula. Also, the unit is private m/min.

又,單位為Um。 蝕刻速度=(蝕刻前的捲帶基材重量(幻-蝕刻後的 ▼基材重量(g))/(處理面積(cm2)xS m3 〇〇 60/30 將上述評估結果顯示於表4。 (比較例2) _除了利用钱刻劑組成物N。· 〜i 9以外係與實施例 2同様地進行,祕刻’而獲得鋼電路圖案。針對所獲得 之銅電路®案的形狀進彳亍上述評估⑴〜⑷。將該評估結 果顯示於表4。 25 1358465 [表4] 钮刻劑組 成物go. 1 目Also, the unit is Um. Etching speed = (weight of the web substrate before etching (▼ substrate weight (g) after phantom-etching) / (processing area (cm2) x S m3 〇〇 60/30 The above evaluation results are shown in Table 4. Comparative Example 2) _ In addition to the use of the money engraving composition N. - i 9 was carried out in the same manner as in Example 2, and the steel circuit pattern was obtained. The shape of the obtained copper circuit ® case was entered. The above evaluations (1) to (4). The evaluation results are shown in Table 4. 25 1358465 [Table 4] Button engraving composition go. 1

in 9In 9

ΙΟ 1.9 如表4之結果所示,本發㈣刻劑組成物皿卜^ 中的任一者皆能獲得良好的電路形狀。 另一方面,未含高分子聚醚二醇及多元醇之蝕刻劑 組成物No. 12,未含多元醇之蝕刻劑組成物N〇13,未 含向分子聚醚二醇之蝕刻劑組成物N〇14〜π,未含特 定的高分子聚醚二醇之蝕刻劑組成物N〇19中的任_ 者則皆未能獲得良好的電路形狀。又,由蝕刻劑組成物 26 量過 算財均分子 直線性會降低且殘膜會變多。 之比t餘ί劑組成物N0.2與#刻劑組成物No·11 好,§環氧乙烷基的含量愈多,則能獲得更良 好的頂部寬度或_係數。 形肤結杲可知,依據本發明則可提供—種能夠無 成物及之含銅材料祕刻劑組 【圖式簡單說明】 無。 【主要元件符號說明】 無〇, 271.9 1.9 As shown in the results of Table 4, any one of the four (4) engraving compositions can obtain a good circuit shape. On the other hand, the etchant composition No. 12 which does not contain the polymer polyether diol and the polyol, the etchant composition N〇13 which does not contain the polyol, and the etchant composition which does not contain the molecular polyether diol N 〇 14 π π, none of the etchant compositions N 〇 19 containing no specific polymer polyether diol failed to obtain a good circuit shape. Further, since the amount of the etchant composition 26 is reduced, the linearity of the molecular weight is lowered and the residual film is increased. The ratio of the composition of the composition N0.2 to the composition of the No. 11 is better, and the more the content of the oxirane group, the better the top width or the _ coefficient can be obtained. According to the invention, according to the present invention, it is possible to provide a composition of a copper-containing material secret agent capable of non-products and the like [Simplified description of the drawing] None. [Main component symbol description] Innocent, 27

Claims (1)

:後無劃線之申請4利範图中文本-附件(三) Amended Claims in Chinese-Encl.fnn (民國100年8月!〇日送呈) (Submitted on Aug. 10, 2011) 七、申請專利範圍: 1. 一種含銅材料用蝕刻劑組成物,其特徵在於係由 包含有以下成分之水溶液所構成: (A)選自二價銅離子及三價鐵離子之至少1種 氧化劑成分0.1〜15質量% ; (3)算術平均分子量為1,500〜3,000之具有環 氧乙烷基及環氧丙烷基的高分子聚醚二醇 0,001〜3質量%,其中高分子聚醚二醇中之環氧乙 烷基的含量為15〜50質量% ; (C)下記式(1)所表示之多元醇0.001〜3質量 % ; [化學式1]: After the application without a line 4 Li Fantu Chinese text - Annex (3) Amended Claims in Chinese-Encl.fnn (Republic of China 100 August! Submitted on the next day) (Submitted on Aug. 10, 2011) VII, the scope of application for patents An etchant composition for a copper-containing material, which is characterized in that it is composed of an aqueous solution containing the following components: (A) at least one oxidizing agent component selected from the group consisting of divalent copper ions and ferric ions 0.1 to 15 (3) A polymer polyether diol having an oxyethylene group and an oxypropylene group having an arithmetic mean molecular weight of 1,500 to 3,000, 0,001 to 3% by mass, wherein the ring of the polymer polyether diol The content of the oxyethylene group is 15 to 50% by mass; (C) 0.001 to 3% by mass of the polyol represented by the formula (1); [Chemical Formula 1] (式中,R1表示碳數2〜6之伸烷基,X1〜X3為 下記式(2)所表示之官能基,X4為氫原子或下記式 (2)所表示之官能基,η表示1〜5之數字) [化學式2](wherein R1 represents an alkylene group having 2 to 6 carbon atoms, X1 to X3 are a functional group represented by the following formula (2), X4 is a hydrogen atom or a functional group represented by the following formula (2), and η represents 1 ~5 number) [Chemical Formula 2] Η (2) (式中,R2及R3表示伸乙基或伸丙基,當R2 為伸乙基時R3為伸丙基,當R2為伸丙基時R3為 28 1358465 ^餐月〜日奴替換頁 伸乙基,P及q表示使多元醇的算術平均分子量. 為200〜1〇,0〇〇且多元醇中之環氧乙烷基的含量為 50質量%以下之數字); (D) 選自磷酸及磷酸鹽之至少1種磷酸成分 0.1〜5質量。/。;及 (E) 選自氣化氫及硫酸之至少1種無機酸成分 0.05〜10 質量〇/〇。 2.如申請專利範圍第1項之含銅材料用蝕刻劑組成 物,其中上述(B)高分子聚驗二醇為下記式(3): [化學式3] H〇+〇访,〇» p) (式中,R及R’表示伸乙基或伸丙基,當 伸乙基時R’為伸丙基,#R為伸丙基時r,為伸^ 基,a、b及c表示使算術平均分子量為 且高分子雜二龄巾之料㈣基含 ’ 質量%之數字)。 川 3.如申請專利範圍第1或2 組成物,其中上述(C)多 項之含鋼材料用蝕刻劑 200-1,500 4. 5. 元醇的算數平均分子量為 如申請專利範圍第1或2項夕人# ^ 組成物,其中上収刻劑 如申請專利範圍第〜麵材料用二劑組成 29 1358465 厂, * κ ι°Η (2) (wherein R2 and R3 represent an extended ethyl group or a propyl group, when R2 is an extended ethyl group, R3 is a stretching propyl group, and when R2 is a stretching propyl group, the R3 is 28 1358465^ Replacing the page with ethyl, P and q are the arithmetic average molecular weight of the polyol. It is 200 to 1 〇, 0 〇〇 and the content of the oxirane group in the polyol is 50% by mass or less); The at least one phosphoric acid component selected from the group consisting of phosphoric acid and phosphate is 0.1 to 5 mass. /. And (E) at least one inorganic acid component selected from the group consisting of hydrogenated hydrogen and sulfuric acid. 0.05 to 10 mass 〇/〇. 2. The etchant composition for a copper-containing material according to the first aspect of the patent application, wherein the (B) polymer diol is the following formula (3): [Chemical Formula 3] H〇+〇访,〇»p Wherein R and R' represent an exoethyl or a propyl group; when an ethyl group is extended, R' is a propyl group, and when #R is a propyl group, r is a stretching group, and a, b and c represent The arithmetic mean molecular weight is such that the material (four) of the polymer second-in-class towel contains a number of '% by mass.川3. The composition of claim 1 or 2, wherein the above-mentioned (C) plurality of etchants for steel-containing materials are 200-1,500. 4. 5. The arithmetic mean molecular weight of the alcohol is as in the first or second item of the patent application scope.夕人# ^ Composition, in which the engraving agent is as claimed in the scope of the patent. The surface material is composed of two doses. 29 1358465 Factory, * κ ι° 物,其中上述式(2)之R2為伸丙基。 6. 一種含銅材料之蝕刻方法,其特徵在於:於厚度 1〜10/zm及银刻間隙1〜10#m之含銅材料的圖 案化中,係使用申請專利範圍第1至5項任一項 所記載之蝕刻劑組成物。 30And R2 in the above formula (2) is a stretching propyl group. 6. A method for etching a copper-containing material, characterized in that in the patterning of a copper-containing material having a thickness of 1 to 10/zm and a silver-engraved gap of 1 to 10 #m, the first to fifth items of the patent application range are used. An etchant composition as described. 30
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