CN111542648A - Composition and etching method - Google Patents
Composition and etching method Download PDFInfo
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- CN111542648A CN111542648A CN201880085360.2A CN201880085360A CN111542648A CN 111542648 A CN111542648 A CN 111542648A CN 201880085360 A CN201880085360 A CN 201880085360A CN 111542648 A CN111542648 A CN 111542648A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/067—Etchants
Abstract
The invention provides a composition which can form a fine pattern with excellent dimensional accuracy while inhibiting the generation of residual films and is useful for etching a metal layer such as a copper-based layer. A composition comprising (A) 0.1 to 25% by mass of at least 1 component selected from the group consisting of copper ions and iron ions, (B) 0.1 to 30% by mass of chloride ions, and (C) a compound represented by the following general formula (1) (R)1: a single bond, etc., R2And R3: a linear or branched C1-4 alkylene group, R4And R5: hydrogen atom, etc., n: a compound represented by the general formula (1) having a number average molecular weight of 550 to 1400) and water, wherein (B) chlorine ions (A) and (B) are present in an aqueous solutionThe mass ratio of the components is 0.5-2.
Description
Technical Field
The present invention relates to a composition containing a compound having a predetermined structure and an etching method using the same.
Background
As a circuit forming method for a printed circuit board, a semiconductor package substrate, or the like, there are known an additive method of adding a circuit pattern to a substrate, and a subtractive method (etching method) of removing an unnecessary portion from a metal foil on a substrate to form a circuit pattern. In the production of printed boards, a subtractive process (etching process) is generally used at low production cost. In addition, with the recent increase in the height and size of electronic devices, miniaturization of patterns is also required for printed boards, and an etching solution capable of forming a fine pattern on a substrate has been developed.
For example, patent document 1 discloses an etching solution for copper or copper alloy containing iron chloride, oxalic acid, and ethylenediaminetetraacetic acid polyoxyethylene polyoxypropylene as an etching solution. Patent document 2 discloses an etching solution for copper-containing materials, which contains ferric chloride, glycol ether compounds, ethylene diamine tetra-polyoxyethylene polyoxypropylene, phosphoric acid, and hydrochloric acid.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 2012-107286
Patent document 2: japanese patent laid-open publication No. 2009-167459
Disclosure of Invention
Problems to be solved by the invention
However, the etching solution disclosed in the above patent document has the following problems: it is difficult to form a fine pattern having a desired dimensional accuracy; or a residual film that causes disconnection or short circuit is likely to be generated.
The present invention has been made to solve the above problems, and an object of the present invention is to provide a composition which can form a fine pattern having excellent dimensional accuracy while suppressing the occurrence of a residual film, and is useful for etching a metal layer such as a copper-based layer. Another object of the present invention is to provide an etching method using the composition.
Means for solving the problems
The present inventors have made intensive studies to solve the above problems, and as a result, have found that: the above problems can be solved by a composition containing the specified components, and the present invention has been completed.
Specifically, the present invention provides a composition comprising an aqueous solution containing 0.1 to 25% by mass of (A) at least 1 component selected from the group consisting of copper ions and iron ions, (B) 0.1 to 30% by mass of chloride ions, (C) 0.01 to 10% by mass of a compound represented by the following general formula (1) and having a number average molecular weight of 550 to 1400, and water, wherein the mass ratio (B)/(A) of the chloride ions (B) to the component (A) is 0.5 to 2.
(in the above general formula (1), R1Represents a single bond or a linear or branched alkylene group having 1 to 4 carbon atoms; r2And R3Each independently represents a linear or branched alkylene group having 1 to 4 carbon atoms; r4And R5Each independently represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms; n each independently represents a number of 550 to 1400 of the number average molecular weight of the compound represented by the general formula (1)
Further, according to the present invention, there is provided an etching method having a step of performing etching using the above composition.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, a composition useful for etching a metal layer such as a copper-based layer, which can form a fine pattern with excellent dimensional accuracy while suppressing the occurrence of a residual film, can be provided. Further, according to the present invention, an etching method using the above composition can be provided.
Drawings
Fig. 1 is a sectional view schematically showing a test substrate after etching.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail. The composition of the present invention is an aqueous solution containing (a) at least 1 component selected from copper ions and iron ions (hereinafter also referred to as "component (a)"), (B) chloride ions (hereinafter also referred to as "component (B)"), (C) a compound represented by the general formula (1) (hereinafter also referred to as "component (C)") and water as essential components. The composition of the present invention is suitable as an etching solution composition for etching a metal layer such as a copper-based layer. Examples of the copper-based layer include a copper alloy such as a silver-copper alloy or an aluminum-copper alloy, and a layer containing copper. Among them, the composition of the present invention is suitable as an etching liquid composition for etching a copper-based layer containing copper.
As the component (a), copper ions and iron ions are used individually or in combination. By blending the copper (II) compound, the composition can contain copper ions. That is, as a supply source of copper ions, a copper (II) compound can be used. Further, by compounding the iron (III) compound, the composition can contain iron ions. That is, as a supply source of iron ions, an iron (III) compound can be used.
Examples of the copper (II) compound include copper (II) chloride, copper (II) bromide, copper (II) sulfate, and copper (II) hydroxide. Examples of the iron (III) compound include iron (III) chloride, iron (III) bromide, iron (III) iodide, iron (III) sulfate, iron (III) nitrate, and iron (III) acetate. Among these compounds, copper (II) chloride and iron (III) chloride are preferable, and copper (II) chloride is more preferable. These compounds may be used singly or in combination of two or more.
The concentration of the component (a) in the composition of the present invention is 0.1 to 25% by mass, preferably 0.5 to 23% by mass, and more preferably 1 to 20% by mass. (A) The concentration of the component can be adjusted as appropriate according to the thickness, width, etc. of the object to be etched. The concentration of component (a) refers to the concentration of copper ions or the concentration of iron ions when copper ions or iron ions are used alone. In addition, the case where copper ions and iron ions are used in combination (mixed) refers to the sum of the concentration of copper ions and the concentration of iron ions. For example, when 10 mass% of copper (II) chloride is contained, the concentration of the component (a) is about 4.7 mass%. When copper (II) chloride was contained in an amount of 10 mass% and iron (III) chloride was contained in an amount of 10 mass%, the concentration of the component (a) was about 8.2 mass%. Further, the concentration of iron ions is preferably less than 5 mass%.
As the supply source of the component (B), hydrogen chloride, sodium chloride, calcium chloride, potassium chloride, barium chloride, ammonium chloride, iron (III) chloride, copper (II) chloride, manganese (II) chloride, cobalt (II) chloride, cerium (III) chloride, zinc (II) chloride, and the like can be used. Among these, hydrogen chloride, iron (III) chloride, and copper (II) chloride are preferable, and hydrogen chloride is more preferable, for the reason that the etching rate is easily controlled, the pattern shape is easily controlled, and the like.
The concentration of the component (B) in the composition of the present invention is 0.1 to 30% by mass, preferably 0.5 to 28% by mass, and more preferably 1 to 25% by mass. (B) The concentration of the component can be adjusted as appropriate according to the thickness, width, etc. of the object to be etched. If the concentration of the component (B) is less than 0.1 mass%, the etching rate may be insufficient. On the other hand, even if the concentration of the component (B) exceeds 30 mass%, it may be difficult to further increase the etching rate, and conversely, problems such as corrosion of the device member may easily occur.
In the composition of the present invention, the mass ratio of the component (B) to the component (a) (B)/(a) is 0.5 to 2, preferably 0.6 to 1.8, particularly preferably 0.65 to 1.7, and most preferably 0.7 to 1.4. If the value of (B)/(a) exceeds 2, a fine wiring pattern having excellent dimensional accuracy cannot be formed. On the other hand, if the value of (B)/(a) is less than 0.5, the etching rate may become insufficient.
(C) The component (A) is a compound represented by the following general formula (1) and having a number average molecular weight of 550 to 1400.
(in the above general formula (1), R1Represents a single bond or a linear or branched alkylene group having 1 to 4 carbon atoms; r2And R3Each independently represents a linear or branched alkylene group having 1 to 4 carbon atoms; r4And R5Each independently represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms; n each independently represents a number of 550 to 1400 of the number average molecular weight of the compound represented by the general formula (1)
As R1、R2And R3Examples of the linear or branched alkylene group having 1 to 4 carbon atoms include a methylene group, an ethylene group, a propylene group, a methylethylene group, a butylene group, an ethylethylene group, a 1-methylpropylene group and a 2-methylpropylene group. As R4And R5Examples of the straight-chain or branched alkyl group having 1 to 4 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a sec-butyl group and a tert-butyl group.
R in the general formula (1) as the component (C)1Is ethylene, R2And R3Is methyl ethylene, R4And R5A compound which is a hydrogen atom and has a number average molecular weight of 650 to 1300 is preferable because it is easy to control the etching rate and suppress the side etching. Among them, the number average molecular weight of the component (C) is particularly preferably 750 to 1200.
Preferred specific examples of the compound represented by the general formula (1) include compounds represented by the following chemical formulae No.1 to No. 36. In chemical formulas No.1 to 36, "Me" represents a methyl group, "Et" represents an ethyl group, and "iPr" represents an isopropyl group. In addition, n is a number of 550 to 1400 which is the number average molecular weight of the compound represented by chemical formula No.1 to No. 36.
The method for producing component (C) is not particularly limited, and known reactions can be applied. For example, ethylene diamine and propylene oxide can be used as raw materials and produced by the reaction represented by the following formula (2). "Me" in the following formula (2) represents a methyl group.
The concentration of the component (C) in the composition of the present invention is 0.01 to 10% by mass, preferably 0.05 to 8% by mass, and more preferably 0.1 to 5% by mass. If the concentration of the component (C) is less than 0.01 mass%, the desired effect of the component (C) cannot be obtained. On the other hand, if the concentration of component (C) exceeds 10 mass%, the etching rate tends to decrease when the composition of the present invention is used as an etching solution composition. Further, the etching liquid composition may easily penetrate into the interface between the resist layer and the metal layer such as a copper-based layer, and the pattern shape may be easily defective.
The composition of the present invention is an aqueous solution containing water as an essential component and each component dissolved in water. As the water, ion-exchanged water, pure water, ultrapure water, or the like from which ionic substances and impurities have been removed is preferably used.
The composition of the present invention can be suitably used as an etchant composition (etching solution) for etching a metal layer such as a copper-based layer, an additive for electroless plating, an additive for electrolytic refining of metals, a pesticide, an insecticide, and the like. Among them, the composition is suitable as an etchant composition for etching a metal layer.
When the composition of the present invention is an etching solution composition, known additives may be added to the etching solution composition as components other than the component (a), the component (B), the component (C) and water within a range not to impair the effects of the present invention. Examples of the additives include a stabilizer for an etching solution composition, a solubilizer for each component, an antifoaming agent, a pH adjuster, a specific gravity adjuster, a viscosity adjuster, a wettability improver, a chelating agent, an oxidizing agent, a reducing agent, and a surfactant. The concentrations of these additives may be set to the range of 0.001 to 50 mass%, respectively.
Examples of the pH adjuster include inorganic acids such as sulfuric acid and nitric acid, and salts thereof; water-soluble organic acids and salts thereof; alkali metal hydroxides such as lithium hydroxide, sodium hydroxide, and potassium hydroxide; alkaline earth metal hydroxides such as calcium hydroxide, strontium hydroxide, and barium hydroxide; alkali metal carbonates such as ammonium carbonate, lithium carbonate, sodium carbonate, and potassium carbonate; alkali metal hydrogencarbonates such as sodium hydrogencarbonate and potassium hydrogencarbonate; quaternary ammonium hydroxide salts such as tetramethylammonium hydroxide and choline; organic amines such as ethylamine, diethylamine, triethylamine, and hydroxyethylamine; ammonium bicarbonate; ammonia, and the like. These pH adjusters may be used singly or in combination of two or more. The content of the pH adjuster may be set to an amount that the pH of the etching liquid composition reaches a desired pH.
Examples of the chelating agent include aminocarboxylic acid-based chelating agents such as ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, triethylenetetraminehexaacetic acid, tetraethylpentamineheptaacetic acid, pentaethylenehexamineoctaacetic acid, nitrosotriacetic acid, and alkali metal (preferably sodium) salts thereof; phosphonic acid chelating agents such as hydroxyethylidene diphosphonic acid, nitrosotrimethylene phosphonic acid, phosphorylbutane tricarboxylic acid, and alkali metal (preferably sodium) salts thereof; and (c) a divalent or higher carboxylic acid compound such as oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, fumaric acid, malic acid, tartaric acid, citric acid, an acid anhydride thereof, and an alkali metal (preferably sodium) salt thereof, a monoanhydride or a dianhydride obtained by dehydrating a divalent or higher carboxylic acid compound. The concentration of the chelating agent in the etching solution composition is usually in the range of 0.01 to 40 mass%, preferably in the range of 0.05 to 30 mass%.
As the surfactant, a nonionic surfactant, a cationic surfactant (abbreviated as "cationic surfactant") and an amphoteric surfactant can be used. Examples of the nonionic surfactant include polyoxyalkylene alkyl ethers, polyoxyalkylene alkenyl ethers, polyoxyethylene polyoxypropylene alkyl ethers (the form of addition of ethylene oxide to propylene oxide may be either random or block), polyethylene glycol propylene oxide adducts, polypropylene glycol ethylene oxide adducts, glycerin fatty acid esters and ethylene oxide adducts, sorbitan fatty acid esters, polyoxyethylene sorbitan fatty acid esters, alkyl polyglucosides, fatty acid monoethanolamides and ethylene oxide adducts, fatty acid-N-methyl monoethanolamides and ethylene oxide adducts, fatty acid diethanolamides and ethylene oxide adducts, sucrose fatty acid esters, alkyl (poly) glycerin ethers, polyglycerin fatty acid esters, polyethylene glycol fatty acid esters, fatty acid methyl ester ethoxylates, polyoxyethylene sorbitan fatty acid esters, polyoxyethylene sorbitan fatty, N-long chain alkyl dimethyl amine oxide, and the like. Examples of the cationic surfactant include alkyl (alkenyl) trimethylammonium salts, dialkyl (alkenyl) dimethylammonium salts, alkyl (alkenyl) quaternary ammonium salts, monoalkyl (alkenyl) quaternary ammonium salts or dialkyl (alkenyl) quaternary ammonium salts containing an ether group, an ester group, or an amide group, alkyl (alkenyl) pyridinium salts, alkyl (alkenyl) dimethylbenzylammonium salts, alkyl (alkenyl) isoquinolinium salts, dialkyl (alkenyl) morpholinium salts, polyoxyethylene alkyl (alkenyl) amines, alkyl (alkenyl) amine salts, polyamine fatty acid derivatives, amyl alcohol fatty acid derivatives, benzalkonium chloride, benzethonium chloride, and the like. Examples of the amphoteric surfactant include carboxybetaine, sulfobetaine, phosphobetaine, amidoamino acid, and imidazolium betaine surfactants. The concentration of the surfactant in the etching liquid composition is usually in the range of 0.001 to 10 mass%.
The etching method of the present invention includes a step of etching using the composition (etching solution composition) of the present invention. In the etching method of the present invention, a known general etching method can be used in addition to the use of the etching solution composition. The etching object is particularly preferably a copper-based layer in the metal layer. Examples of the copper-based layer include a copper alloy such as a silver-copper alloy or an aluminum-copper alloy, and a layer containing copper. Among them, copper is particularly suitable. As a specific etching method, for example, a dipping method, a spraying method, or the like can be used. The etching conditions may be appropriately adjusted depending on the composition of the etchant composition and the etching method to be used. Furthermore, various known methods such as batch method, flow method, automatic control method based on the oxidation-reduction potential, specific gravity and acid concentration of the etchant, and the like can be used.
The etching conditions are not particularly limited, and may be arbitrarily set according to the shape, film thickness, and the like of the object to be etched. For example, the etching liquid composition is preferably sprayed at 0.01 to 0.2MPa, and more preferably sprayed at 0.01 to 0.1 MPa. In addition, the etching temperature is preferably 10 to 50 ℃, and more preferably 20 to 50 ℃. The temperature of the etching liquid composition may be increased by the reaction heat, and therefore, the temperature may be controlled by a known means so as to be maintained within the above temperature range as required. The etching time may be a time sufficient to etch the object to be etched. For example, when etching an object to be etched having a film thickness of about 1 μm, a line width of about 10 μm, and an opening of about 100 μm in the above temperature range, the etching time may be about 10 to 300 seconds.
According to the etching method using the etching solution composition of the present invention, a fine pattern can be formed while suppressing generation of a residual film. Therefore, the present invention can be suitably used for a package substrate requiring a fine pitch, a COF, and a subtractive method for TAB applications, in addition to a printed circuit board.
Examples
The present invention will be described in detail below with reference to examples and comparative examples, but the present invention is not limited to these examples.
The number average molecular weights of the component (C) used in examples and comparative examples are shown in table 1. C-1 to c-4 in Table 1 are compounds represented by chemical formula No.17, and n in chemical formula No.17 is a value at which the number average molecular weight of the compound represented by chemical formula No.17 reaches the value represented in Table 1. Further, c-5 and c-6 in Table 1 are compounds represented by the following general formula (3).
(in the above general formula (3), R11Represents an ethylene group, R12And R13Represents a methylethylene group, R14And R15Represents an ethylene group, n1And n2The number average molecular weight of the compound represented by the general formula (3) is a value shown in Table 1. Wherein n is1/(n1+n2)＝0.2)
[ Table 1]
| (C) Composition (I) | Number average molecular weight |
| c-1 | 1,100 |
| c-2 | 850 |
| c-3 | 1,500 |
| c-4 | 450 |
| c-5 | 3,500 |
| c-6 | 5,000 |
(example 1 and comparative example 1)
Copper (II) chloride, hydrochloric acid and component (C) were mixed so as to have the compositions shown in Table 2, thereby obtaining etching solution compositions Nos. 1 to 21. The balance of these etching liquid compositions is water.
[ Table 2]
(example 2 and comparative example 2)
A copper foil having a thickness of 8 μm was laminated on a resin substrate to prepare a substrate. A dry film resist having a pattern of 14 μm in line width and 6 μm in opening was formed on the copper foil of the base to fabricate a test substrate. The prepared test substrate was wet-etched by spraying the etching solution composition for an appropriate etching time (50 to 130 seconds) at a treatment temperature of 45 ℃ and a treatment pressure of 0.1 MPa. The appropriate etching time is a time obtained by calculating a time required for the width of the lower portion of the thin line to reach 10 μm from the etching rate. Thereafter, the resist pattern is removed using a stripping liquid to form a fine pattern (thin line).
The formed thin line was evaluated by the following (1) to (5). The evaluation results are shown in table 3. The smaller the one-side etching width is, the more the side etching is suppressed. The absence of a residual film (a residual etched portion) means that disconnection or short circuit hardly occurs. Fig. 1 is a cross-sectional view schematically showing a test substrate after etching.
(1) Width of upper part of fine line
The measurement was performed by cross-sectional observation using a laser microscope. The unit is "μm".
(2) Width of lower part of filament
The measurement was performed by cross-sectional observation using a laser microscope. The unit is "μm".
(3) The difference between the width of the lower part of the filament and the width of the upper part of the filament
The calculation is performed by the following formula. The unit is "μm".
"difference between width of lower portion of thin line and width of upper portion of thin line" - "measured value of width of upper portion of thin line"
(4) Single sided lateral etch width
The calculation is performed by the following formula. The unit is "μm".
"one-sided side etching width" { "line width of resist layer" - "measurement value of width of upper part of fine line" }/2
(5) Presence or absence of residual film
When the residue of the etched portion was observed with a laser microscope, the term "present" was used, and when the residue was not observed, the term "absent" was used.
[ Table 3]
*: no pattern formed and could not be measured
As shown in table 3, it can be seen that: the width of the upper part of the thin wire in examples 2-1 to 2-11 was maintained, the difference between the width of the lower part of the thin wire and the width of the upper part of the thin wire was small, and the etching width of the one-side part was small, as compared with comparative examples 2-1, 2-2 and 2-5 to 2-10. Therefore, the following steps are carried out: in particular, in examples 2-1 to 2-3, 2-6 to 2-8 and 2-10, the difference between the width of the lower portion of the thin line and the width of the upper portion of the thin line was less than 2.0. mu.m, and a pattern with high dimensional accuracy was formed. On the other hand, in comparative examples 2-3 and 2-4, the etching rate was insufficient and the patterns were not formed, and the evaluation items (1) to (4) could not be measured. From the results of examples 2-1 to 2-11 and comparative examples 2-1 to 2-4, it is clear that: even when etching is performed using a composition containing a compound represented by the general formula (1), if the value of (B)/(a) of the composition deviates from a predetermined range, the dimensional accuracy decreases or no pattern is formed. In addition, no residual film (residue of etched portion) was observed in examples 2-1 to 2-11 and comparative examples 2-5 and 2-6, while residual films were observed in comparative examples 2-1 to 2-4 and 2-7 to 2-10. As described above, according to the present invention, it is possible to provide an etching composition and an etching method which are less likely to cause a residual film that may cause disconnection or short-circuiting and which are capable of forming a fine pattern with a desired dimensional accuracy.
Industrial applicability
1: copper foil
2: resist layer
3: resin matrix
4: width of upper part of fine line
5: width of lower part of filament
6: line width of resist layer
Claims (5)
1. A composition which is an aqueous solution comprising:
(A) 0.1 to 25 mass% of at least 1 component selected from the group consisting of copper ions and iron ions;
(B) 0.1-30% by mass of chloride ions;
(C) 0.01 to 10 mass% of a compound represented by the following general formula (1) and having a number average molecular weight of 550 to 1400; and
the amount of water is controlled by the amount of water,
the mass ratio of the (B) chloride ions to the (A) component (B)/(A) is 0.5 to 2,
in the general formula (1), R1Represents a single bond or a linear or branched alkylene group having 1 to 4 carbon atoms; r2And R3Each independently represents a linear or branched alkylene group having 1 to 4 carbon atoms; r4And R5Each independently represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms; n is a number of 550 to 1400, which is a number average molecular weight of the compound represented by the general formula (1).
2. The composition according to claim 1, wherein in the general formula (1), R2And R3Is a methyl ethylene group.
3. The composition according to claim 1 or 2, which is an etching liquid composition for etching a metal layer.
4. The composition of claim 3, wherein the metal layer is a copper-based layer.
5. An etching method comprising a step of etching with the composition according to claim 3 or 4.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018000654 | 2018-01-05 | ||
| JP2018-000654 | 2018-01-05 | ||
| PCT/JP2018/045797 WO2019135338A1 (en) | 2018-01-05 | 2018-12-13 | Composition and etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111542648A true CN111542648A (en) | 2020-08-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201880085360.2A Pending CN111542648A (en) | 2018-01-05 | 2018-12-13 | Composition and etching method |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP7333755B2 (en) |
| KR (1) | KR102598530B1 (en) |
| CN (1) | CN111542648A (en) |
| TW (1) | TW201936995A (en) |
| WO (1) | WO2019135338A1 (en) |
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- 2018-12-13 KR KR1020207022371A patent/KR102598530B1/en active IP Right Grant
- 2018-12-13 WO PCT/JP2018/045797 patent/WO2019135338A1/en active Application Filing
- 2018-12-13 CN CN201880085360.2A patent/CN111542648A/en active Pending
- 2018-12-13 JP JP2019563948A patent/JP7333755B2/en active Active
- 2018-12-25 TW TW107146993A patent/TW201936995A/en unknown
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| US20040089838A1 (en) * | 1998-06-09 | 2004-05-13 | Ebara Densan Ltd. | Method for roughening copper surface |
| CN1570212A (en) * | 2003-02-27 | 2005-01-26 | 美格株式会社 | Etching solution of copper or copper alloy and method for producing electronic substrate using the solution |
| CN102995021A (en) * | 2011-09-08 | 2013-03-27 | 关东化学株式会社 | Etching solution composition and etching method for copper and copper alloy |
| CN104120427A (en) * | 2013-04-23 | 2014-10-29 | 三菱瓦斯化学株式会社 | Method of treating wiring substrate and wiring substrate manufactured by same |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP7333755B2 (en) | 2023-08-25 |
| JPWO2019135338A1 (en) | 2021-01-07 |
| TW201936995A (en) | 2019-09-16 |
| KR20200105691A (en) | 2020-09-08 |
| WO2019135338A1 (en) | 2019-07-11 |
| KR102598530B1 (en) | 2023-11-06 |
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