CN1570212A - Etching solution of copper or copper alloy and method for producing electronic substrate using the solution - Google Patents
Etching solution of copper or copper alloy and method for producing electronic substrate using the solution Download PDFInfo
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- CN1570212A CN1570212A CN 200410006062 CN200410006062A CN1570212A CN 1570212 A CN1570212 A CN 1570212A CN 200410006062 CN200410006062 CN 200410006062 CN 200410006062 A CN200410006062 A CN 200410006062A CN 1570212 A CN1570212 A CN 1570212A
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Abstract
The present invention provides an etching liquid for copper or a copper alloy capable of producing an electronic substrate in which side etches are reduced, the narrowing of the upper part of copper wiring is suppressed, and short circuits are not generated, and to provide a method for producing an electronic substrate using the same. In the method for producing an electronic substrate, a copper layer (2a) formed on an electrically insulated base material (1) is etched so as to be a prescribed shape to form copper wiring (2c). After the main etching, copper (A) to be removed remaining in the cuff part of copper wiring (2b) is removed with an aqueous solution comprising (a) an oxidizer for copper by 1 to 50 g/L, (b) at least one kind of acid selected from the group consisting of hydrochloric acid by 1 to 400g/L and organic acid by 1 to 200 g/L, and (c) at least one kind of polymer selected from the group consisting of polyalkylene glycol and a copolymer of polyamine and polyalkylene glycol by 0.01 to 50 g/L.
Description
Technical field
The present invention relates to make copper or the etching solution of copper alloy and the manufacture method of using the electric substrate of this solution that side etching top few, that suppress copper wiring attenuates and do not have the electric substrate of short circuit.
Background technology
The forming method of the copper wiring of electric substrate has the whole bag of tricks; the following method of many employings; shown in Fig. 2 (a)～(c); contain form the etch protection layer of desired shape on the surface of the copper layer 2a that the surface of electrical isolation base materials 1 such as the glass fibre substrate of epoxy resin dipping, the Kevlar substrate that contains epoxy resin dipping, ceramic substrate forms after, form the method (elimination method) of copper wiring by etched copper 2a.
But in aforesaid method, shown in the A of Fig. 2 (b), base material 1 surface of copper wiring 2b base section is remaining copper (it is residual to be also referred to as root) easily, has copper wiring 2b to produce risk of short-circuits.When also continuing etching in order to avoid short circuit, shown in Fig. 2 (c), the problem that has copper wiring 2c ' to attenuate.This phenomenon is called as side etching.This phenomenon is obvious especially on the top of copper wiring 2c ' (near the part etch protection layer).When copper wiring 2c ' attenuated, contact area also diminished, and during the actual installation electronic unit, was easy to generate the bad phenomenon of actual installation.
Propose in the following Patent Document 1 will contain the etching solution of cupric chloride 100～300 grams per liters, hydrochloric acid 50～100 grams per liters, 2-aminobenzothiazole based compound 0.05～0.2 weight % and polyoxyethylene glycol 0.02～0.2 weight % as the few etching solution of side etching.
Patent Document 1: the spy opens flat 6-57453 communique
Summary of the invention
, because in recent years along with the progress of the graph thinning of copper wiring, patch bay obviously narrows down, and more and more worries short circuit, so seek to have the forming method of the copper wiring of higher reliability.
Its purpose of the present invention is: can make copper or the etching solution of copper alloy and the manufacture method of using the electric substrate of this solution that side etching top few, that suppress copper wiring attenuates and do not have the electric substrate of short circuit in order to solve above-mentioned problem in the past, to provide.
In order to achieve the above object, copper of the present invention or copper metal etch solution is characterized in that: be by containing
(a) oxygenant 1～50 grams per liter of copper and,
(b) hydrochloric acid 1～200 grams per liter and or organic acid 1～400 grams per liter and,
(c) aqueous solution that is selected from least a polymkeric substance 0.01～50 grams per liter in the multipolymer of polyalkylene glycol and polyamine and polyalkylene glycol constitutes.
Then, the manufacture method of electric substrate is characterized in that: be that in accordance with regulations shape is carried out etching and formed the manufacture method of the electric substrate of copper wiring on the copper layer that forms on the electrical isolation base material, after the main etching, by containing
(a) oxygenant 1～50 grams per liter of copper and,
(b) hydrochloric acid 1～200 grams per liter and or organic acid 1～400 grams per liter and,
(c) aqueous solution that is selected from least a polymkeric substance 0.01～50 grams per liter in the multipolymer of polyalkylene glycol and polyamine and polyalkylene glycol is removed the remaining copper that should remove in bottom of copper wiring.
As discussed above, after the main etching,, can make the electric substrate that side etching top few, that suppress copper wiring attenuates and do not have short circuit by using specific etching solution to remove to remain in the copper of copper wiring bottom.
Description of drawings
Fig. 1 (a)～(c) is the sectional view of electric substrate of the engraving method of expression one embodiment of the invention.
Fig. 2 (a)～(c) is the sectional view of the electric substrate of the original engraving method of expression.
Nomenclature: electrically insulating base; 2a copper layer; 2b, 2c, 2c ' copper wiring; 3 protective layers; A remains in the copper of bottom.
Embodiment
Illustrate with regard to etching solution of the present invention.
(a) about the oxygenant of copper
As the oxygenant of copper, enumerate for example cupric ion, iron ion.Under the situation of cupric ion, cooperate cupric chloride (II), cupric bromide (II), copper hydroxide (II) etc., can produce cupric ion in the solution.The situation of iron ion cooperates iron(ic) chloride (III), iron bromide (III), ferric iodide (III), ferric sulfate (III), iron nitrate (III), ironic acetate (III) etc., the iron ion that also can produce in the solution.Consider preferred 1 grams per liter of the concentration of oxygenant from the viewpoint of the removing property of the remaining copper in the bottom of copper wiring; The viewpoint that never produces the remaining copper in the bottom of copper wiring considers, preferred 50 grams per liters are following, below preferred especially 45 grams per liters.The situation of cupric ion is 3～40 grams per liters more preferably, and the situation of iron ion is 5～30 grams per liters more preferably.
(b) about being selected from least a acid of hydrochloric acid and organic acid
Enumerate formic acid as organic acid, acetate, propionic acid, butyric acid, valeric acid, saturated fatty acids such as caproic acid, vinylformic acid, Ba Dousuan, unsaturated fatty acidss such as iso-crotonic acid, oxalic acid, propanedioic acid, succsinic acid, pentanedioic acid, hexanodioic acid, aliphatics saturated dicarboxylic acid such as pimelic acid, aliphatics unsaturated dicarboxylic acids such as toxilic acid, phenylformic acid, phthalic acid, aromatic carboxylic acids such as styracin, oxalic acid, lactic acid, oxysuccinic acid, citric acids etc. contain oxycarboxylic acid, sulfonic acid, β-chloropropionic acid, nicotinic acid, xitix, alcohol acid (acid of ヒ De ロ キ シ ピ バ リ Application), levulinic acids etc. have substituent carboxylic acid etc.
As acid, hydrochloric acid is preferred because can remove the copper that remains in copper wiring bottom at short notice.Concentration when using hydrochloric acid is considered from the viewpoint of the removing property of the copper that remains in the copper wiring bottom, more than preferred 1 grams per liter; Consider from the viewpoint that is difficult to produce side etching, below preferred 200 grams per liters.More preferably 10～120 grams per liters.
Concentration when using organic acid is considered from the viewpoint of the removing property of the copper that remains in the copper wiring bottom, more than preferred 1 grams per liter; Consider from the viewpoint that is difficult to produce side etching, below preferred 400 grams per liters.More preferably 10～300 grams per liters.
(c) about at least a polymkeric substance in the multipolymer that is selected from polyalkylene glycol, polyamine and polyalkylene glycol
As polyalkylene glycol, enumerate polyoxyethylene glycol, polypropylene glycol, ethylene oxide propylene oxide copolymer etc.
The multipolymer of polyamine and polyalkylene glycol is just like the above-mentioned polyalkylene glycol and the multipolymer of polyamine.As polyamine, enumerate ethylenediamines such as quadrol, diethylenetriamine, Triethylenetetramine (TETA), tetren, penten, N-ethyl ethylene diamine etc.
The molecular weight of the polymkeric substance of c composition is considered from the removing property or the deliquescent viewpoint of the copper that remains in copper wiring middle part, and molecular-weight average is preferred 400～30000, more preferably 900～10000.
As the c composition among the present invention, preferred especially quadrol makes the multipolymer of oxyethylene and propylene oxide polymeric molecular-weight average 3000～7000.Above-mentioned polymkeric substance also can use as the commercially available material of nonionogenic tenside.
The concentration of above-mentioned polymkeric substance is considered from the viewpoint of the removing property of the copper that remains in copper wiring, more than preferred 0.01 grams per liter; Consider from the viewpoint that the stopping property that makes copper wiring and etch protection layer does not reduce, below preferred 50 grams per liters.The more preferably scope of 0.1～2 grams per liter.
Can also suitably cooperate other composition in the etching solution of the present invention.As other composition, for example enumerating and suppressing spraying and handle when waiting blistered defoamer etc.
Etching solution of the present invention can form by making each above-mentioned composition be dissolved in the easy modulation of the water capacity.As above-mentioned water, the water of deionizing material such as preferred ion exchanged water, pure water, ultrapure water or impurity.
The detailed effect of etching solution of the present invention is also unclear, it is characterized in that: different with common etching solution, and the easy copper that corrodes the part that is connected with the electrical isolation base material.Therefore, be useful to removing the copper that remains in the copper wiring bottom.
Below, the manufacture method about electric substrate is described.
At first, shown in Fig. 1 (a), copper layer 2a is attached to the surface of electrical isolation base material 1, forms etch protection layer 3 on the surface of copper layer 2a corresponding to desired copper wiring shape.As electrical isolation base material 1, enumerate Resins, epoxy, viscose glue maleic anhydride contract resin base materials such as imines triazine resin, fluoro-resin, polyimide, polyphenylene ether, liquid crystalline polymers or ceramic base material etc.Above-mentioned resin base material also can be used reinforcements such as glass fibre, Kevlar.Formation such as the also available coating process of copper layer 2, spattering method.In addition, after the resin of copper layer 2a surface coated electrical isolation base material 1 and sclerosis, also can form etch protection layer 3 on other surface of copper layer 2a corresponding to desired copper wiring shape.
Then, be that the etching solution of main composition comes etched copper 2a (Fig. 1 (b)) as main etching by spraying with iron(ic) chloride, cupric chloride etc.In this circumstantial letter said main etching be meant shown in Fig. 1 (b) like that, removing of copper wiring 2b bottom A be that inadequate, copper layer in addition is the etching of the copper wiring 2b of purpose shape approximately.At this moment, if only remove original method of copper, comprise that etching also takes place the part of the short circuit shown in the A that is in fear of to take place Fig. 1 (b), but residual in the present invention this part stops main etching with main etching.
Then, by spraying etching solution of the present invention or the copper by part shown in the A that is immersed in the etching solution of the present invention, removes the Fig. 1 (b) that remains in copper wiring bottom, form the wide copper wiring 2c (Fig. 1 (c)) in line middle part.The treatment time of utilizing etching solution of the present invention is suitably adjusted by what, the shape of copper wiring etc. that should remove copper.
As above, after the main etching, when using etching solution of the present invention to remove to remain in the copper of copper wiring bottom, can make the electric substrate that side etching top few, that suppress copper wiring attenuates and do not have short circuit.
Below, utilize embodiment to be described more specifically.
The two sides of preparation electrical isolation base material is posted the woven fiber glass base material Resins, epoxy impregnation copper of the Copper Foil of thick 18 μ m and is opened laminated board.Then, this plate is immersed in the palladium colloidal solution and attached and coating catalyzer after, carry out electrolytic copper free coating, form the electroless plating layer of thick 1 μ m.Then, use copper sulfate to bathe and carry out electrolytic copper plating layer, form the electrolytic copper plating layer of thick 25 μ m.
Then, after the electrolytic copper plating layer surface is ground in polishing, the laminating film protective layer.Then, expose ultraviolet ray by photomask, develop and form copper wiring wide/patch bay (L/S) is the protection model of 70/70 μ m.
Then, by the copper etching solution that the aqueous solution that contains cupric chloride 300 grams per liters and hydrochloric acid 100 grams per liters constitutes, etching is 150 seconds under the condition of liquid temperature 40 degree, spraying pressure 0.05MPa.
Then, the etching solution of forming shown in table 1～2, liquid temperature 25 degree, spraying are pressed under the condition of 0.05MPa, the time shown in spraying table 1～2, remove the copper that remains in the copper wiring bottom.In addition, the iron concentration shown in table 1～2 forms by the ferric chloride in aqueous solution modulation of adding 39 weight %.In addition, copper ion concentration forms by adding the cupric chloride modulation.
Then, be immersed in the dry film protective layer stripping liquid and peel off the dry film protective layer.
With 1500 times and 3500 times of observable electric substrates, investigation has or not the copper (A of Fig. 1 (b)) that remains in the copper wiring bottom by scanning electronic microscope.The part that above-mentioned A is fully removed in 0 expression, V represents the part of residual a little above-mentioned A, the residual part that above-mentioned A is arranged of * expression.In addition, the live width on the copper wiring top that obtains with the photography of 400 times multiplying power by opticmicroscope is tried to achieve by the portrait that instrumentation obtains.The result is shown in table 1～2.
Table 1
| The experiment number | Form (grams per liter) | Treatment time (second) | Remaining copper | The distribution on top wide (μ m) |
| Embodiment 1 | Hydrochloric acid 110 iron ions 13 cupric ions 8 quadrol PO affixtures (molecular-weight average 900) 0.1 | ? ????40 ? ? | ? ??○ ? ? | ? ????33.3 ? ? |
| The ion-exchange water surplus | ||||
| Embodiment 2 | Hydrochloric acid 110 iron ions 13 copper ions 8 ethylenediamine EOPO addition products (mean molecule quantity 5000) 0.1 ion-exchange water surplus | ? ????60 ? ? ? | ? ??○ ? ? ? | ? ????32.9 ? ? ? |
| | Hydrochloric acid 70 iron ions 7 copper ions 4 ethylenediamine EOPO addition products (mean molecule quantity 3500) 0.3 ion-exchange water surplus | ? ????15 ? ? ? | ? ??○ ? ? ? | ? ????36.7 ? ? ? |
| Embodiment 4 | Hydrochloric acid 70 iron ions 13 copper ions 8 ethylenediamine EOPO addition products (mean molecule quantity 7000) 0.6 ion-exchange water surplus | ? ????15 ? ? ? | ? ??○ ? ? ? | ? ????34.6 ? ? ? |
| Embodiment 5 | Hydrochloric acid 70 iron ions 26 copper ions 16 ethylenediamine EOPO addition products (mean molecule quantity 6300) 0.6 ion-exchange water surplus | ? ????15 ? ? ? | ? ??○ ? ? ? | ? ????33.5 ? ? ? |
| Embodiment 6 | Hydrochloric acid 18 iron ions 13 copper ions 8 ethylenediamine EOPO addition products (mean molecule quantity 6300) 0.6 ion-exchange water surplus | ? ????15 ? ? ? | ? ??○ ? ? ? | ? ????37.3 ? ? ? |
| Embodiment 7 | Hydrochloric acid 70 iron ions 13 copper ions 8 ethylenediamine EOPO addition products (mean molecule quantity 6300) 1.8 ion-exchange water surplus | ? ????15 ? ? ? | ? ??○ ? ? ? | ? ????35.2 ? ? ? |
| Embodiment 8 | Hydrochloric acid 35 iron ions 7 quadrol EOPO affixtures (molecular-weight average 6300) 1.2 ion-exchange water surplus | ? ????15 ? ? | ? ??○ ? ? | ? ????36.4 ? ? |
(appendix) EO representative ring oxidative ethane, PO representative ring Ethylene Oxide
Table 2
| The experiment number | Form (grams per liter) | Treatment time (second) | Remaining copper | The distribution on top wide (μ m) |
| Real | Hydrochloric acid 70 |
| Execute example 9 | Cupric ion 8 quadrol EOPO affixtures (molecular-weight average 6300) 1.2 ion-exchange water surplus | ????60 | ??○ | ????34.2 |
| Embodiment 10 | Hydrochloric acid 70 iron ions 13 copper ions 8 ethylenediamine EOPO addition products (mean molecule quantity 2000) 0.6 ion-exchange water surplus | ? ????30 | ? ??○ | ? ????33.0 |
| Embodiment 11 | Formic acid 35 iron ions 13 copper ions 8 ethylenediamine EOPO addition products (mean molecule quantity 6300) 1.2 ion-exchange water surplus | ? ????120 | ? ??○ | ? ????35.1 |
| Embodiment 12 | Hydrochloric acid 35 iron ions 6 copper ions 4 ethylenediamine EOPO addition products (mean molecule quantity 6300) 0.01 ion-exchange water surplus | ? ????60 | ? ??○ | ? ????34.5 |
| Embodiment 13 | Formic acid 400 iron ions 13 quadrol EOPO affixtures (molecular-weight average 6300) 0.6 ion-exchange water surplus | ? ????30 | ? ??○ | ? ????33.3 |
| Embodiment 14 | Hydrochloric acid 200 iron ions 1 quadrol EOPO affixture (molecular-weight average 6300) 0.6 ion-exchange water surplus | ? ????200 | ? ??○ | ? ????31.2 |
| Embodiment 15 | Hydrochloric acid 1 cupric ion 50 quadrol EOPO affixtures (molecular-weight average 6300) 1 ion-exchange water surplus | ? ????60 | ? ??○ | ? ????35 |
| Embodiment 16 | Formic acid 1 cupric ion 50 quadrol EOPO affixtures (molecular-weight average 6300) 1 ion-exchange water surplus | ? ????90 | ? ??○ | ? ????34.1 |
| Embodiment 17 | Hydrochloric acid 35 iron ions 6 quadrol PO affixtures (molecular-weight average 900) 50 ion-exchange water surplus | ? ????60 | ? ??○ | ? ????34.5 |
| Embodiment 18 | Acetate 100 iron ions 6 quadrol EOPO affixtures (molecular-weight average 6300) 0.8 ion-exchange water surplus | ? ????30 | ? ??○ | ? ????35.5 |
(appendix) EO representative ring oxidative ethane, PO representative ring Ethylene Oxide
| The experiment number | Form (grams per liter) | Treatment time (second) | Remaining copper | The distribution on top wide (μ m) |
| Comparative example 1 | ?????????????- | ???- | ????× | ????38.2 |
| Comparative example 2 | Hydrochloric acid 110 iron ions 13 cupric ions 8 ion-exchange water surplus | ? ????60 | ? ????× | ? ????25.1 |
| Comparative example 3 | Formic acid 110 iron ions 13 copper ions 8 ethylenediamine PO addition products (mean molecule quantity 200) 1 ion-exchange water surplus | ? ????20 | ? ????× | ? ????35.1 |
| Comparative example 4 | Hydrochloric acid 90 copper ions 120 polyethylene glycol (mean molecule quantity 4000) 5 2-aminobenzothiazoles 1 ion-exchange water surplus | ? ????10 | ? ????× | ? ????33.2 |
(standby) EO representative ring oxidative ethane, PO representative ring Ethylene Oxide
Claims (4)
1. the etching solution of copper or copper alloy is characterized in that: be by containing
(a) oxygenant 1～50 grams per liter of copper and,
(b) hydrochloric acid 1～200 grams per liter and or organic acid 1～400 grams per liter and,
(c) be selected from that the aqueous solution of at least a polymkeric substance 0.01～50 grams per liter in the multipolymer of polyalkylene glycol and polyamine and polyalkylene glycol constitutes.
2. the etching solution of copper according to claim 1 or copper alloy is characterized in that: the oxygenant of copper is that at least a ion, its concentration of being selected from cupric ion and iron ion are 1～45 grams per liter.
3. the manufacture method of electric substrate is characterized in that: be that in accordance with regulations shape is carried out etching and formed the manufacture method of the electric substrate of copper wiring on the copper layer that forms on the electrical isolation base material, after the main etching, by containing
(a) oxygenant 1～50 grams per liter of copper and,
(b) hydrochloric acid 1～200 grams per liter and or organic acid 1～400 grams per liter and,
(c) aqueous solution that is selected from least a polymkeric substance 0.01～50 grams per liter in the multipolymer of polyalkylene glycol and polyamine and polyalkylene glycol is removed the remaining copper that should remove in bottom of copper wiring.
4. the manufacture method of electric substrate according to claim 3, it is characterized in that: the oxygenant of copper is that at least a ion, its concentration of being selected from cupric ion and iron ion are 1～45 grams per liter.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003051768 | 2003-02-27 | ||
| JP2003051768A JP4018559B2 (en) | 2003-02-27 | 2003-02-27 | Manufacturing method of electronic substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1570212A true CN1570212A (en) | 2005-01-26 |
| CN100436645C CN100436645C (en) | 2008-11-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200410006062XA Expired - Fee Related CN100436645C (en) | 2003-02-27 | 2004-02-27 | Etching solution of copper or copper alloy and method for producing electronic substrate using the solution |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4018559B2 (en) |
| CN (1) | CN100436645C (en) |
| TW (1) | TW200422434A (en) |
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Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6345014A (en) * | 1986-08-13 | 1988-02-26 | Showa Denko Kk | Preforming of part material constituting lid of can-like container |
| JP3387527B2 (en) * | 1992-08-07 | 2003-03-17 | 朝日化学工業株式会社 | Composition for etching copper or copper alloy |
| JP3387528B2 (en) * | 1992-08-07 | 2003-03-17 | 朝日化学工業株式会社 | Composition for etching copper or copper alloy and method for etching the same |
| JPH06287774A (en) * | 1993-04-05 | 1994-10-11 | Metsuku Kk | Surface-treating agent of copper and copper alloy |
| JP2944518B2 (en) * | 1996-07-16 | 1999-09-06 | 富山日本電気株式会社 | Copper and copper alloy surface treatment agent |
| CN1195895C (en) * | 1997-01-29 | 2005-04-06 | 美克株式会社 | Micro etching agent of copper and copper alloy |
-
2003
- 2003-02-27 JP JP2003051768A patent/JP4018559B2/en not_active Expired - Fee Related
-
2004
- 2004-02-13 TW TW93103475A patent/TW200422434A/en not_active IP Right Cessation
- 2004-02-27 CN CNB200410006062XA patent/CN100436645C/en not_active Expired - Fee Related
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| CN111542648A (en) * | 2018-01-05 | 2020-08-14 | 株式会社Adeka | Composition and etching method |
| CN109954888A (en) * | 2019-04-10 | 2019-07-02 | 延边大学 | A kind of elemental copper nanometer sheet of triangle plate shape and preparation method thereof |
| CN109954888B (en) * | 2019-04-10 | 2021-10-26 | 延边大学 | Triangular-plate-shaped elemental copper nanosheet and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100436645C (en) | 2008-11-26 |
| JP4018559B2 (en) | 2007-12-05 |
| JP2004256901A (en) | 2004-09-16 |
| TWI340181B (en) | 2011-04-11 |
| TW200422434A (en) | 2004-11-01 |
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