CN1333561A - Method for preparing non-electroplating more than two layers of metal convex blocks - Google Patents
Method for preparing non-electroplating more than two layers of metal convex blocks Download PDFInfo
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- CN1333561A CN1333561A CN 01118735 CN01118735A CN1333561A CN 1333561 A CN1333561 A CN 1333561A CN 01118735 CN01118735 CN 01118735 CN 01118735 A CN01118735 A CN 01118735A CN 1333561 A CN1333561 A CN 1333561A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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Abstract
The present invention relates to a preparation method for forming more than two layers of metal projection. Said method can be used for encapsulation of LCD, general IC card radio-frequency component. It includes the following steps: firstly, providing chip or base plate with several soldering lugs, applying first dielectric layer and exposing soldering lugs, applying second dielectric layer and depositing conductor layer in its defined circuit in non-electroplating mode to form photoresist pattern, exposing several preset positions of conductorlayer, activating the surface of every said preset position and forming a metal projection in non-electroplating mode, removing photoresist pattern and applying third dielectric layer, finally forming external metal layer in non-electroplating mode to completely cover the periphery of said metal projection, and communicating to exterior with said conductor layer.
Description
The present invention relates to the encapsulation technology of LCD, general IC and radio frequency component (RF), particularly a kind of electroless plating forms the preparation method of double-deck above metal coupling, to finish good coating effect.
Semiconductor technology of today makes rapid progress, and compete more and more fierce, all semiconductor manufacturing and encapsulation dealer invariably with all one's mind and energy attempt develop the integrated circuit package that volume is littler, usefulness is higher and cost is lower.Except the production technology of integrated circuit (IC) chip (1CChip) has marched toward the preparation method of deep-sub-micrometer and 12 cun wafers (Wafer), significant progress is also arranged on the encapsulation technology of chip.Encapsulate (BGA Package), engage tin nodule number group encapsulation (TAB BGA) automatically from traditional leaded package (Lead Frame Package), tin nodule number group to substrate, present encapsulation technology can make the size of components of integrated circuit package littler, thinner, and chip is carried out usefulness and production efficiency is higher.
We know, (anisotropicconductivefilm, ACF) mode has been applied in LCD, general IC and radio frequency component (radiationfrequency is in encapsulation RF) the anisotropy conducting film.It is weld pad (pad) design that utilizes on a kind of integrated circuit (IC) chip or the semiconductor substrate, utilizing conductor layer to see through metal coupling (bump) again is conducted with the external world, no matter so be to make position change or electrical detection etc., all can make different wires design according to actual demand.The design of common metal projection at present is all to electroplate (electrioplating) conducting metal.But plated bumps is blocks of processing, and when it electroplated uniformity as if consideration, its manufacturing cost was with higher, and its production capacity is also limited.If secondly projection is located on the IC chip, then need in wafer factory, make by the wafer preparation method, thereby whole preparation method's degree of difficulty and complexity have been improved, the qualification rate of its goods also can be subjected to very big influence, especially on the quite crisp III-V compound semiconductor of material.Therefore be substituted in the preparation method who establishes projection on the IC chip with regard to having had in the mode of establishing projection on the baseplate.Known is applied in LCD, general IC and radio frequency component (RF) encapsulation in anisotropy conducting film (ACF) mode, and metallic copper projection of μ need possess the above height of 20 μ m on it; If forming metal coupling in the electroless plating mode then can't reach this thickness requirement, even and the quick also only about 4 μ m/hr of electroless copper speed.And not only must expend when thickness is too high for a long time, and its coating effect is also not good.
The purpose of this invention is to provide a kind of preparation method and manufacturing cost of simplifying metal coupling reduce relatively, not only in preparation condition control all relative with the technical sophistication degree lower, product percent of pass increases relatively, the surface characteristic (sklneffect) of conductive characteristic and radio frequency component well and the electroless plating that can carry out batch production form the preparation method of the above metal coupling of bilayer.
The preparation method that electroless plating of the present invention forms double-deck above metal coupling includes the following step:
(1): an integrated circuit (IC) chip or a substrate that is provided with some weld pads (pad) is provided, is covered with a protective layer around this weld pad.
(2): enclose a photoresistance pattern, this photoresistance pattern should expose some weld pads.
(3): each weld pad surface is activated (activation) to produce activator (activator).
(4): form the metal coupling (bump) of a predetermined thickness on this weld pad in electroless plating (electrolessplating) mode.
(5): remove this photoresistance pattern, expose this metal coupling fully.
(6): form the complete coating of a peripheral metal layer in the electroless plating mode again and live this metal coupling periphery, the conductivity of this peripheral metal level or high frequency characteristics are good than interior metal, and are communicated with this weld pad.
Wherein, described weld pad is that copper pad or aluminium welding pad are wherein a kind of.
The thickness of described photoresistance pattern is more than 15 μ m.
Adopt 10% sulfuric acid that described weld pad surface is cleaned described can also comprising before each weld pad surface is activated.
The activator of described copper pad is metal kind crystalline substance (Pd seed); The activator of described aluminium welding pad is metallic zinc kind crystalline substance (Zn seed).
Described metal coupling is the nickel material, and its height is between 15～20 μ m.
Described peripheral metal layer is metal copper layer or gold (Au) layer.
The height of described metal coupling adds that the thickness of peripheral metal layer is altogether at least more than 18 μ m.
In the time will carrying out bond pad locations change or electrical detection, can make different wires design according to actual demand, at this moment, the preparation method that electroless plating of the present invention forms double-deck above metal coupling may further comprise the steps:
(1): an integrated circuit (IC) chip or a substrate that is provided with some weld pads (pad) is provided, is covered with a protective layer around this weld pad.
(2): be coated with one first dielectric layer on integrated circuit (IC) chip or the substrate, and make first dielectric layer expose weld pad, use chemistry or physics mode will redistribute the route surface coarsening, again its activation is beneficial to electroless deposition, Pd-activation for example, then be coated with last one second dielectric layer, to define the route of redistribution (redistribution).
(3): deposit conductor layer in electroless plating mode (electroless plating) in this set redistribution route, promptly the layer of metal layer sees through this metal level and can make weld pad do still to be conducted with the external world when change the position.
(4): enclose a photoresistance pattern, this photoresistance pattern should expose the plurality of preset position of metal level, with the position of laying as the metal coupling after the redistribution.
(5): then this predeterminated position surface is respectively activated (activation) to produce activator (activator).
(6): form the metal coupling (bump) of a predetermined thickness on this metal level in electroless plating (electrolessplating) mode.
(7): remove this photoresistance pattern, expose this metal coupling fully.
(8): be covered with one the 3rd dielectric layer around metal coupling, its thickness is low than the height of this metal coupling, and is provided with the size opening more bigger than metal coupling around metal coupling, to expose this metal coupling fully.
(9): form a metal level in the electroless plating mode outside metal coupling again, this metal coupling periphery is lived in complete coating, and the conductivity of this peripheral metal level or high frequency characteristics are good than interior metal, and is communicated with this interior metal layer.
Wherein, if when not having a protective layer (passivelayer), can around this weld pad, form a dielectric layer earlier around the described weld pad to substitute former protective layer.
Wherein, the material of described dielectric layer is to select for use the material of preferable binding ability (adhesive ability) to constitute, and this dielectric layer can be selected to form with chemical vapor deposition (CVD), vacuum splashing and plating (Sputtering), rotary coating (spin coating) dielectric material (BCB, PI etc.) or laminating type.
The preparation method that electroless plating of the present invention forms double-deck above metal coupling no matter on technology and effect all with known inequality, and when the mode of this high thickness double-level-metal projection is applied in radio frequency component (RP) encapsulation, can finish good coating effect, surface characteristic (skin effect) with favorable conductive characteristic and radio frequency component is applied to the radio frequency component encapsulation to reach in the electroless plating mode.
Electroless plating of the present invention forms the preparation method of double-deck above metal coupling, comprises that the preparation method of electroless plating formation nickel/copper (Ni/Cu) or nickel/gold (Ni/Au) projection has following advantage at least:
(1) known when being applied in the encapsulation of LCD, IC and radio frequency component (RF) in anisotropy conducting film (ACF) mode, metal coupling need possess the above height of 20 μ m; Yet, if form the quality requirements that copper bump can't reach this thickness in the electroless plating mode, even and general electroless plating speed fast also have only 4 μ m/hr, its coating effect is also not good when thickness is too high.Electroless plating of the present invention forms the double-deck projection of nickel/copper (Ni/Cu) can take into account the metal coupling preparation method who electrically reaches the high frequency characteristics demand and finish high thickness easily.
(2) conduction of general radio frequency component focuses mostly in the surface, form metal coupling (Ni) fast with electroless plating of the present invention, be the peripheral metal layer (Cu) or the gold (Au) of satisfactory electrical conductivity in its peripheral electroless plating, so combination makes the peripheral metal layer have the surface characteristic (skineffect is the peripheral metal layer that most conduction of current all betide metal coupling) of good conductive characteristic and radio frequency component.So reach the encapsulation that is applied to radio frequency component in the electroless plating mode.
(3) the present invention can simplify the preparation method of nickel/copper bump, and manufacturing cost reduces relatively: mainly be the technology that forms nickel/copper (Ni/Cu) projection in the electroless plating mode because of the present invention, can carry out a batch production, and in single equipment a large amount of treatment product, and do not need expensive equipment, manufacturing cost also can significantly reduce.
(4) weld pad of the present invention can utilize conductor layer to be conducted through the metal coupling and the external world again, no matter so be to make position change or electrical detection etc., all can make different wires design according to actual demand, reaches good efficacy.
Further describe the present invention below in conjunction with embodiment
Figure 1A to Fig. 1 F is the embodiment of the invention 1 forms the preparation method of nickel/copper (Ni/Cu) projection with electroless plating a schematic diagram.
Fig. 2 A to Fig. 2 I is the embodiment of the invention 2 forms the preparation method of nickel/copper (Ni/Cu) projection with electroless plating a schematic diagram.
Wherein, label is expressed as respectively:
The 100-substrate
The 105-weld pad
The 110-protective layer
115,225-photoresistance pattern
120, the 230-activator
125, the 240-metal coupling
130,250-peripheral metal layer
The 200-integrated circuit (IC) chip
The 205-weld pad
210-first dielectric layer
215-second dielectric layer
The 220-metal level
245-the 3rd dielectric layer
Embodiment 1
On the IC base plate for packaging, form the method and the structure of projection
Shown in Figure 1A to Fig. 1 F, the preparation method for a kind of electroless plating formation nickel/copper (Ni/Cu) projection comprises the following steps:
(1): shown in Figure 1A, provide a substrate 100 that is provided with some weld pads (pad) 105, respectively this weld pad 105 around and be covered with a protective layer (passivelayer) 110, avoid extraneous injury to protect this weld pad 105.Wherein said weld pad 105 is that copper pad (Cu-pad) or aluminium welding pad (Al-pad) are wherein a kind of.
(2): shown in Figure 1B, form a photoresistance pattern 115, this photoresistance pattern 115 also exposes respectively this weld pad 105, and the thickness of this photoresistance pattern 115 needs greater than 17 μ m.
(3): these weld pad 105 surfaces are cleaned, to remove its dirty and oxide in surface; As use 10% sulfuric acid (H
2SO
4) make cleaning agent.Shown in Fig. 1 C, these weld pad 105 surfaces are respectively activated (activation) to produce activator (activator) 120, this activator 120 can be kind of a crystalline substance (Pd-seed) concerning copper pad; And concerning aluminium welding pad, can be zinc kind crystalline substance (Zn-seed).
(4): following one of for emphasis of the present invention, the metal coupling (bump) 125 that forms a predetermined thickness in electroless plating (electrolessplating) mode is on this weld pad 105, shown in Fig. 1 D; This metal coupling 125 is the best with nickel (Ni), and its growth speed is a lot of soon than copper, and its controllable thickness is built between 15～20 μ m.
(5): remove this photoresistance pattern 115, expose this metal coupling 125 fully, shown in Fig. 1 E.
(6): following also is one of emphasis of the present invention, form a peripheral metal layer 130 in the electroless plating mode again and cover this metal coupling 125 peripheries, these peripheral metal layer 130 the bests are metal copper layer, thereby form one " weld pad/nickel/copper " structure, wherein, the thickness of metal coupling peripheral metal layer 130 is below 4 μ m.
Embodiment 2
On the IC base plate for packaging, form the method and the structure of projection
Shown in Fig. 2 A to Fig. 2 I, be a kind of preparation method of electroless plating formation nickel/copper (Ni/Cu) projection, it is to comprise the following steps:
(1): shown in Fig. 2 A, provide an integrated circuit (IC) chip 200 that is provided with some weld pads (pad) 205.Wherein said weld pad 205 is that copper pad (Cu-pad) or aluminium welding pad (Al-pad) are wherein a kind of.
(2): be coated with last one first dielectric layer 210, this first dielectric layer 210 exposes weld pad 205, then, is coated with last one second dielectric layer 215 again, to define the route of redistribution (redistribution), shown in Fig. 2 B.Certainly, as if being covered with a protective layer (passivelayer) around this weld pad 205, the step that is covered with first dielectric layer 210 then can be omitted, and also need activate or and alligatoring on its surface.
(3): shown in Fig. 2 C, in this set redistribution route, deposit conductor layer 220 in the electroless plating mode, this conductor layer 220 is preferable with metal level, the best is a metal copper layer, seeing through this conductor layer 220 can make weld pad 205 do the position change and be conducted with the external world, certainly, this conductor layer 220 can be made various wires design according to actual demand.
Following each step is an emphasis of the present invention:
(4): shown in Fig. 2 D, form a photoresistance pattern 225, this photoresistance pattern 225 exposes the plurality of preset position 225a on the conductor layer 220, and this predeterminated position 225a lays part as the follow-up metal coupling of redistribution.Same, this predeterminated position 225a can make various wires design according to actual demand.
(5): this weld pad predeterminated position 225a surface is cleaned, to remove its dirty and oxide in surface; Can use 10% sulfuric acid (H
2SO
4) as cleaning agent.Then this predeterminated position 225a surface is respectively activated (activation) to produce activator (activator) 230, this activator 230 can be kind of a crystalline substance (Pd-seed) concerning copper pad, the tool that the preferably can select only to be adsorbed in the copper pad surface is solution optionally; And concerning aluminium welding pad, can be zinc kind crystalline substance (Zn-seed), shown in Fig. 2 E.
(6): shown in Fig. 2 F, form the metal coupling (bump) 240 of a predetermined thickness on this weld pad 205 in electroless plating (electrolessplating) mode; This metal coupling 240 is the best with grow up faster metal such as nickel (Ni).
(7): remove this photoresistance pattern 225, expose this metal coupling 240 fully, shown in Fig. 2 G.
(8): the thickness that is covered with the 3rd dielectric layer 245, the three dielectric layers 245 is low than the height of this metal coupling 240, and is provided with the size opening more bigger than metal coupling 240 around the metal coupling, to expose this metal coupling 240, shown in Fig. 2 H.
(9): form a peripheral metal layer 250 complete coating in the electroless plating mode again and live this metal coupling 240 peripheries, and be communicated with this conductor layer 220, this peripheral metal layer 240 is the best with electrical or metal that high frequency characteristics is preferable such as copper or gold.Wherein, on the described metal coupling thickness of peripheral metal layer 250 below 4 μ m.
So, this weld pad 205 can utilize conductor layer 220 to see through metal coupling 240 again and be conducted with the external world, no matter be to make position change or electrical detection etc., all can make different wires design according to actual demand, reaches good efficacy.
The above just utilizes preferred embodiment to describe the present invention in detail, but not limit the scope of the invention, and know this type of skill personage and all can understand, suitably do some trickle change and adjustment, will not lose main idea of the present invention place, also not break away from the spirit and scope of the present invention.
Claims (17)
1. an electroless plating forms the preparation method of two-layer above metal coupling, it is characterized in that comprising the following steps:
(a) provide a substrate that is provided with some weld pads (pad), respectively this weld pad around and be covered with a protective layer (passivelayer);
(b) enclose a photoresistance pattern, this photoresistance pattern should expose respectively this weld pad;
(c) this weld pad surface is respectively activated (activation) to produce activator (activator);
(d) form the layer metal coupling (bump) of a predetermined thickness on this weld pad in electroless plating (electroless plating) mode;
(e) remove this photoresistance pattern;
(f) form a peripheral metal layer in the electroless plating mode, envelope this metal coupling periphery fully.
2, preparation method as claimed in claim 1 is characterized in that described weld pad is that copper pad or aluminium welding pad are wherein a kind of.
3, preparation method as claimed in claim 1, the thickness that it is characterized in that described photoresistance pattern is more than 15 μ m.
4, preparation method as claimed in claim 1 is characterized in that described step (b) also comprises afterwards described weld pad surface is cleaned.
5, preparation method as claimed in claim 1, the activator that it is characterized in that described copper pad is a metal kind crystalline substance (Pdseed); The activator of described aluminium welding pad is metallic zinc kind crystalline substance (Zn seed).
6, preparation method as claimed in claim 1 is characterized in that described inner layer metal projection is the nickel material, and its height is between 15～20 μ m.
7, preparation method as claimed in claim 1 is characterized in that described peripheral metal layer is metal copper layer or gold (Au) layer.
8, preparation method as claimed in claim 1 is characterized in that the height of described inner layer metal projection adds that the thickness of peripheral metal layer is altogether at least more than 18 μ m.
9, a kind of electroless plating forms the preparation method of two-layer above metal coupling, it is characterized in that comprising the following steps:
(a) on the chip that is provided with some weld pads (pad) and matcoveredn, be covered with first dielectric layer, to define redistribution (redistribution) route;
(b) surface is carried out depositing conductor layer in the electroless plating mode in this redistribution route after alligatoring and the activation processing, i.e. the interior metal layer;
(c) enclose a photoresistance pattern, this photoresistance pattern should expose the plurality of preset position;
(d) this predetermined position surface is respectively activated (activation) to produce activator (activator);
(e) on this predeterminated position, form the metal coupling (bump) of a predetermined thickness in electroless plating (electrolessplating) mode;
(f) remove this photoresistance pattern;
(g) be covered with second dielectric layer around metal coupling, its thickness is little than the thickness of this metal coupling, and is provided with the size opening more bigger than metal coupling around metal coupling, to expose this metal coupling fully.
(h) form a peripheral metal layer in the electroless plating mode, envelope this metal coupling periphery fully.
10. if preparation method as claimed in claim 9 is characterized in that around the described weld pad forming a dielectric layer earlier to substitute former protective layer around this weld pad when not having a protective layer (passivelayer).
11,, it is characterized in that described weld pad is that copper pad or aluminium welding pad are wherein a kind of as claim 9,10 described preparation methods.
12, preparation method as claimed in claim 9 is characterized in that afterwards described weld pad surface being cleaned at described (d).
13, preparation method as claimed in claim 12 is characterized in that describedly adopting 10% sulfuric acid to carry out to the weld pad cleaning surfaces.
14, preparation method as claimed in claim 11, the activator that it is characterized in that described copper pad is a metal kind crystalline substance (Pdseed); The activator of described aluminium welding pad is a metallic zinc kind crystalline substance (Znseed).
15, preparation method as claimed in claim 9 is characterized in that described metal coupling is the nickel material, and its height is more than 15 μ m.
16, preparation method as claimed in claim 9 is characterized in that described peripheral metal layer is metal copper layer or gold (Au) layer.
17, preparation method as claimed in claim 9 is characterized in that the height of described metal coupling adds that the thickness of peripheral metal layer needs altogether greater than this second medium thickness, at least more than 18 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011187352A CN1173401C (en) | 2001-06-08 | 2001-06-08 | Method for preparing non-electroplating more than two layers of metal convex blocks |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011187352A CN1173401C (en) | 2001-06-08 | 2001-06-08 | Method for preparing non-electroplating more than two layers of metal convex blocks |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1333561A true CN1333561A (en) | 2002-01-30 |
| CN1173401C CN1173401C (en) | 2004-10-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011187352A Expired - Fee Related CN1173401C (en) | 2001-06-08 | 2001-06-08 | Method for preparing non-electroplating more than two layers of metal convex blocks |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100416875C (en) * | 2005-03-30 | 2008-09-03 | 南茂科技股份有限公司 | Structure of package using coupling and its forming method |
| CN102064112A (en) * | 2009-11-17 | 2011-05-18 | 北大方正集团有限公司 | Method for manufacturing copper cylinder through pattern transfer |
| CN101325167B (en) * | 2007-04-20 | 2011-06-08 | 三星电子株式会社 | Method of manufacturing a semiconductor device having an even coating thickness and related device |
| WO2014005246A1 (en) * | 2012-07-05 | 2014-01-09 | 璩泽明 | Chemical nickel plating bump structure of wafer soldering pad and manufacturing method therefor |
| CN104952744A (en) * | 2015-05-20 | 2015-09-30 | 南通富士通微电子股份有限公司 | Wafer level package structure manufacturing method |
| CN106165093A (en) * | 2014-04-11 | 2016-11-23 | 高通股份有限公司 | Including surface interconnection and the base plate for packaging of the cavity comprising electroless plating implant |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101346038B (en) * | 2007-07-11 | 2011-01-26 | 巨擘科技股份有限公司 | Multi-layer substrate and manufacturing method thereof |
-
2001
- 2001-06-08 CN CNB011187352A patent/CN1173401C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100416875C (en) * | 2005-03-30 | 2008-09-03 | 南茂科技股份有限公司 | Structure of package using coupling and its forming method |
| CN101325167B (en) * | 2007-04-20 | 2011-06-08 | 三星电子株式会社 | Method of manufacturing a semiconductor device having an even coating thickness and related device |
| CN102064112A (en) * | 2009-11-17 | 2011-05-18 | 北大方正集团有限公司 | Method for manufacturing copper cylinder through pattern transfer |
| WO2014005246A1 (en) * | 2012-07-05 | 2014-01-09 | 璩泽明 | Chemical nickel plating bump structure of wafer soldering pad and manufacturing method therefor |
| CN106165093A (en) * | 2014-04-11 | 2016-11-23 | 高通股份有限公司 | Including surface interconnection and the base plate for packaging of the cavity comprising electroless plating implant |
| CN106165093B (en) * | 2014-04-11 | 2019-03-05 | 高通股份有限公司 | Package substrate including surface interconnection and the cavity comprising electroless plating filler |
| CN104952744A (en) * | 2015-05-20 | 2015-09-30 | 南通富士通微电子股份有限公司 | Wafer level package structure manufacturing method |
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| Publication number | Publication date |
|---|---|
| CN1173401C (en) | 2004-10-27 |
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Granted publication date: 20041027 Termination date: 20190608 |